JP2009239175A - Film capacitor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film capacitor with ensured humidity-proofing even if metallized film, in which a vapor deposition electrode is formed, is used as dielectric film, and a capacitive element having the vapor deposition electrode with fuse function as self-security function is coated with powder resin, which is inferior in barrier property to moisture. <P>SOLUTION: An electric resistance value of vapor deposition electrodes 1a, 1b, which consist of aluminum, is made into 5-9 Ω/sq. Then, deterioration of electrode function resulting from erosion of vapor deposition electrodes 1a, 1b caused by moisture is restricted, while fuse function is kept. Even when coating is carried out by powdered resin, humidity-proofing ability of the film capacitor can be ensured. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a film capacitor used in electronic equipment, electrical equipment, industrial equipment, and automobiles.

  Film capacitors are generally classified into those using metal foils as electrodes and those using vapor-deposited metal provided on a dielectric film as electrodes. Above all, film capacitors using evaporated metal as an electrode (hereinafter referred to as “deposited electrode”) have a smaller volume occupied by the electrode than metal foil and can be reduced in size and weight, and self-healing performance (insulation defect part) peculiar to evaporated electrodes. In case of short-circuiting, the deposited electrode around the defective part is evaporated and scattered by the short-circuiting energy to insulate, and the function of the capacitor can be recovered. It has been.

  Conventional examples 1 to 3 of such film capacitors are shown in FIGS.

  In the figure, one metallized film has a vapor deposition electrode 1a formed by vapor-depositing a metal on one side of a dielectric film 3a except for an insulation margin 4a at one end, and the vapor deposition electrode 1a has no vapor deposition metal. It consists of a plurality of divided electrodes 2a divided by non-evaporated slits 5a, and is connected in parallel by fuses 7a provided in the slits 5a. The other metallized film has a vapor deposition electrode 1b which is a non-divided electrode formed by vapor-depositing metal on one entire surface of the dielectric film 3b except for the insulation margin 4b at the other end. These metallized films are overlapped and wound or laminated so that the insulation margins 4a and 4b do not overlap each other, and the metallicon 6a is connected to the vapor deposition electrode 1a and the metallicon 6b is connected to the vapor deposition electrode 1b. In FIGS. 13, 14A and 14B, reference numeral 78a denotes an insulation margin.

  In such a film capacitor, the self-healing performance is better as the vapor deposition electrodes 1a and 1b (FIG. 11) are thinner (because the vapor deposition electrodes are scattered with less energy). A heavy edge structure in which the thickness of the vapor deposition electrode having the width W (FIG. 11) is reduced and the thickness of the portion connected to the metallicons 6a and 6b (FIG. 11) is increased. With this structure, the withstand voltage of the capacitor can be increased and a high potential gradient can be achieved.

  Further, a slit 5a (FIGS. 9 and 13) having no metal is provided in the vapor deposition electrode to be divided into a plurality of divided electrodes 2a (FIGS. 9, 10A, 13, and 14A). The divided electrodes are connected in parallel by a fuse 7a formed between them (FIGS. 10A, 12A, and 14A). This forms a self-protection function for fusing the fuse around the insulation defect portion by the short-circuit current at the time of self-recovery and separating the insulation defect portion from the electric circuit.

  Furthermore, in recent years, a grid-like divided electrode 32a (FIGS. 11 and 12 (a)) in which the above-described slits are provided in a grid form and subdivided into fine divided electrodes and connected in parallel by fuses has also been proposed. The area of each segmented electrode is small, the capacity decrease when the fuse is blown is reduced, and the insulation recovery performance of the vapor deposition electrode can be improved by improving the shape of the fuse and the area of each segmented electrode. It is said that potential gradient (increase voltage per 1 μm of dielectric film) can be achieved.

For example, Japanese Patent Laid-Open No. 4-225508 proposes that by using a grid-like divided electrode in which the free ends of the divided slits are rounded, a double potential gradient can be achieved compared to a film capacitor without divided electrodes. Yes. Japanese Patent Application Laid-Open No. 5-132291 realizes a film capacitor having grid-like divided electrodes and having a potential gradient of 130 to 350 V / μm in direct current when the area of each divided electrode is 10 to 1000 mm ^2. It is proposed that it can be done.

  However, although the conventional film capacitor provides a self-protection function by the fuse function, the temperature of the capacitor rises due to the heat generation of the fuse due to the current at the time of energization compared to the capacitor without the split slit, and further, In the edge structure, the thickness of the deposited film to be the fuse is thin, so that there is a problem that the heat generation of the fuse is further increased. If the width of the fuse is widened or a plurality of fuses are provided in parallel, heat generation is reduced, but there is a problem that the operability as a fuse becomes dull and the self-security function is lowered.

  And in order to solve such a problem, the film capacitor of the structure as shown in FIG.15, 16,17 is also proposed, FIG. 15 is sectional drawing of a film capacitor, FIG. 16 (a), ( b) is a bird's-eye view of a pair of metallized films used in the film capacitor shown in FIG. FIG. 17 is a cross-sectional view of a film capacitor in which a capacitor element 101 is accommodated in a resin or metal case 102 together with a filling resin 103. In FIG. 15 and FIGS. 16 (a) and 16 (b), a pair of vapor deposition electrodes 1a and 1b constituting one and the other metallized film forming a wound film capacitor are formed of dielectric films 3a and 3b. On one side, aluminum metal is deposited by evaporation except for the insulation margins 4a and 4b at one end, and the electrodes are drawn out through the metallicons 6a and 6b at both end surfaces.

The vapor-deposited electrodes 1a and 1b, which are non-divided electrodes, are non-vapor-deposited having no vapor-deposited electrode formed by oil transfer on the side from the substantially central portion of the width W of the effective electrode portion forming the capacitance toward the insulation margins 4a and 4b. Are divided into a plurality of divided electrodes 2a and 2b by the slits 5a and 5b, respectively, and dielectrics located on the side near the metallicons 6a and 6b on the side opposite to the insulation margins 4a and 4b from the substantially central portion of the width W of the effective electrode portion. The fuse electrodes 7a and 7b are connected in parallel to the vapor deposition electrodes 1a and 1b deposited on the entire surface of the body films 3a and 3b. With this configuration, it is possible to realize a film capacitor having a self-safety function and generating little heat by the fuses 7a and 7b. In other words, the current applied to the vapor deposition electrodes 1a and 1b, which are non-divided electrodes, increases as the distance from the metallicons 6a and 6b increases, and decreases as the distance increases. Accordingly, the vapor deposition electrodes 1a and 1b on the side close to the metallicons 6a and 6b are vapor-deposited on the entire surface of the dielectric films 3a and 3b corresponding to the magnitude of the flowing current, and flow at a position away from the metallicons 6a and 6b. Since the fuses 7a and 7b divided electrodes 2a and 2b are provided on the side closer to the insulation margins 4a and 4b where the current decreases, the heat generation in the fuses 7a and 7b due to the flowing current can be reduced, and the temperature rise can be suppressed. It is.
JP-A-4-225508 Japanese Patent Laid-Open No. 5-132291

  However, the present inventors have attempted to reduce the shape and reduce the manufacturing cost of the case made of resin or metal and the filling resin constituting the exterior of the film capacitor as proposed above. For this reason, it was found that there was a problem in the moisture resistance of the film capacitor when it was made in place of the configuration using only the powder resin. This is because the exterior is replaced with powder resin, which makes it easy for moisture to enter the film capacitor, and the evaporated electrode corrodes due to the infiltrated moisture and does not function as an electrode. As a result, the tan δ (dielectric loss tangent of the film capacitor) ) Will rise.

  In view of the above-mentioned problems of the conventional technology, the problem to be solved by the present invention is an exterior made of a powder resin in a film capacitor that suppresses heat generation by a fuse during energization and suppresses a rise in the temperature of the capacitor. In addition, the present invention provides a film capacitor that ensures moisture resistance, can be reduced in size, and can reduce manufacturing costs.

  In order to solve the above-described problems, the present invention is a film capacitor having a self-protection function, wherein the electrical resistance value of a pair of vapor deposition electrodes is 5Ω / □ to 9Ω / □.

  According to this configuration, the function of the vapor deposition electrode as an electrode can be maintained for a long period of time, even if moisture is likely to enter the film capacitor by using a powder resin for the exterior.

  Since the object of the present invention described above can be achieved by using the configuration described in each claim as an embodiment, the function and effect of the configuration are described together with the configuration of each claim. Specific terms that require explanation in the configuration are added to the detailed explanation and are described in the embodiment of the present invention.

  The invention according to claim 1 has an insulating margin at one end and a first dielectric film having a first film surface provided with a first vapor deposition electrode and an insulating margin at the other end. A second dielectric film having a second film surface provided with a second vapor deposition electrode, and a first metallicon and a second metallicon on both end faces of the first and second dielectric films. And the first and second vapor deposition electrodes are both made of aluminum, and a slit having no vapor deposition electrode is provided at a substantially central portion of the width of the effective electrode portion forming the capacitance, and the insulation margin is formed from the slit. A split electrode is formed on the side facing the insulating margin, a non-split electrode is formed on the side facing the insulating margin from the slit, and the split electrode and the non-split electrode are arranged at approximately the center of the effective electrode width. The slot provided in the section A capacitor which is connected by a fuse on a first electrode and disposed so that one of the non-divided electrodes faces the other divided electrode through a dielectric film, wherein the first vapor-deposited electrode and the first metallicon In the film capacitor in which the second vapor deposition electrode and the second metallicon are communicated, the electric resistance value of the first and second vapor deposition electrodes is 5Ω / □ to 9Ω / □. In a film capacitor having a self-protection function with little heat generated by a fuse, the moisture resistance can be improved.

  According to a second aspect of the present invention, there is provided an undeposited dielectric film and a first deposition electrode having an insulation margin at one end of the dielectric film facing the undeposited dielectric film and having a first deposition electrode. As the second film surface having an insulation margin at the other end of the back surface of the first film surface and providing the second vapor deposition electrode, the first metallicon is formed on both end surfaces of the dielectric film. And a second metallicon, wherein the first and second vapor deposition electrodes are both made of aluminum, and a slit having no vapor deposition electrode is provided in the substantially central portion of the width of the effective electrode portion forming the capacitance. A split electrode is formed on the side from the slit toward the insulation margin, and a non-split electrode is formed on the side from the slit in a direction opposite to the insulation margin, so that the split electrode and the non-split electrode are placed in front. It is a capacitor that is connected by a fuse on the slit provided at substantially the center of the width of the effective electrode portion, and is arranged so that one of the non-divided electrodes is opposed to the other divided electrode through a dielectric film. In the film capacitor in which the first vapor-deposited electrode and the first metallicon are connected, and the second vapor-deposited electrode and the second metallicon are connected, the electric resistance of the first and second vapor-deposited electrodes The value is 5Ω / □ to 9Ω / □, and in a film capacitor having a self-protection function with small heat generation by a fuse, it is possible to improve the moisture resistance and a pair of vapor deposition electrodes. Can be provided in a single vapor deposition step.

  The invention according to claim 3 is a first dielectric film having a first film surface provided with a first vapor deposition electrode made of aluminum, and a second film provided with a second vapor deposition electrode made of aluminum. A second dielectric film having a surface, and a first metallicon and a second metallicon respectively connected to the first vapor deposition electrode on both end faces of the first dielectric film, One vapor deposition electrode is separated at a different potential by an insulating margin extending in the longitudinal direction and located substantially at the center, and each of the separated first vapor deposition electrodes is substantially at the center of the width of the effective electrode portion forming the capacitance. A slit having no vapor deposition electrode is provided in the part, a divided electrode is formed on the side from the slit toward the insulating margin, and a non-divided electrode is provided on the side from the slit in the direction opposite to the insulating margin. The divided electrode and the non-divided electrode are connected by a fuse on the slit provided substantially at the center of the width of the effective electrode portion, and the second vapor deposition electrode has an insulation margin extending in the longitudinal direction at both ends. A slit that does not have a vapor deposition electrode is provided at a substantially central part of the width of the effective electrode part that forms the capacitance, and a split electrode is formed on the side from the slit toward the insulation margin, and the insulation margin and the slit are formed from the slit. A non-divided electrode is formed on the side facing the opposite direction, and the divided electrode and the non-divided electrode are connected by a fuse on the slit provided at a substantially central portion of the width of the effective electrode portion. In the film capacitor in which the other divided electrode is arranged to face the divided electrode with a dielectric film interposed therebetween, the electric resistance value of the first and second vapor deposition electrodes is 5Ω / □ to 9Ω / □. In a film capacitor that has a self-protection function with a small amount of heat generated by a fuse, it is possible to improve the moisture resistance and to have a high potential. The gradient can be obtained.

  The invention according to claim 4 is the film capacitor according to any one of claims 1 to 3, wherein the divided electrodes are each divided into a plurality of grid-like divided electrodes and connected in parallel by fuses. Therefore, in the film capacitor having a self-protection function, the moisture resistance can be improved, the heat generated by the fuse is smaller, and the potential gradient can be increased.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(Embodiment 1)
1 is a cross-sectional view of a film capacitor according to Embodiment 1 of the present invention, and FIGS. 2A and 2B are bird's-eye views of a pair of metallized films used in the film capacitor shown in FIG. In FIG. 1 and FIGS. 2 (a) and 2 (b), a pair of vapor deposition electrodes 1a and 1b constituting one and the other metallized film forming a wound type film capacitor are formed of dielectric films 3a and 3b. On one side, except for the insulation margins 4a and 4b at one end, an aluminum metal is provided by a vacuum deposition method so that the electric resistance value becomes 5Ω / □ to 9Ω / □, and the metallicons 6a on both end surfaces are provided. The electrode is pulled out through 6b.

  The vapor-deposited electrodes 1a and 1b, which are non-divided electrodes, are non-vapor-deposited that do not have a vapor-deposited electrode formed by oil transfer on the side from the substantially central part of the width W of the effective electrode part forming the capacitance toward the insulation margins 4a and 4b. Are divided into a plurality of divided electrodes 2a and 2b by the slits 5a and 5b, respectively, and dielectrics located on the side near the metallicons 6a and 6b on the side opposite to the insulation margins 4a and 4b from the substantially central portion of the width W of the effective electrode portion. The fuse electrodes 7a and 7b are connected in parallel to the vapor deposition electrodes 1a and 1b deposited on the entire surface of the body films 3a and 3b.

  With this configuration, in the film capacitor having a self-safety function in which the heat generated by the fuse is small, the electrical resistance value of the deposited electrodes 1a and 1b is 5Ω / □ to 9Ω / □, so that the electrical resistance value is 10Ω / □ to the conventional value. The film thickness of the vapor deposition electrodes 1a and 1b is substantially thicker than that of 11Ω / □, and as a result, the moisture resistance performance of the film capacitor can be improved.

  Next, an example of characteristics of the film capacitor in the present embodiment will be described.

  In the film capacitor according to the present embodiment, as the dielectric films 3a and 3b, a 3 μm-thick polypropylene film is used to fabricate a small-sized capacitor element having a winding capacity of 1 μF and impregnated with a liquid epoxy resin. Later, it was covered with an epoxy powder resin. The effective electrode width W was 11.1 mm, and the fuses 7a and 7b were both 0.3 mm wide.

  For comparison, a film capacitor made of a conventional technique was also prepared in which the electrical resistance values of the vapor deposition electrodes 1a and 1b were 4Ω / □ and 10Ω / □. The dielectric film material, thickness, capacitance, effective electrode width W, and fuse width were set to the same values as in the present embodiment.

  In order to evaluate the moisture resistance of the film capacitor thus produced, DC 450 V was applied at a temperature of 60 ° C. and a humidity of 95 ° C., and the rate of change of tan δ (100 kHz) after 1500 hours was confirmed. Further, in order to confirm the influence of thermal damage when forming the vapor deposition electrodes 1a and 1b on the dielectric films 3a and 3b by lowering the electric resistance of the vapor deposition electrodes 1a and 1b, DC630V was applied at a temperature of 115 ° C. The rate of change in capacity (1 kHz) after 1500 hours was confirmed to evaluate the voltage resistance. Twelve film capacitors were evaluated for each electrical resistance value. The results are shown in Table 1.

  As shown in Table 1, in the confirmation of moisture resistance, when the electrical resistance value of the deposited film is 10Ω / □, the rate of change in the tan δ value is determined as a defective product due to the increase in the electrical resistance value due to corrosion of the deposited film. When the electrical resistance of the deposited film is 4Ω / □, the withstand voltage of the dielectric film due to thermal damage when the deposited electrode is formed on the dielectric film is confirmed. Due to the decrease in performance, a lot of healing occurs in the metallized film, and as a result, the rate of change in capacity exceeds −10%, which is judged as a defective product, appears. On the other hand, in the range of 5 Ω / □ to 9 Ω / □ in the vapor deposition film resistance, there was no product that was judged as a defective product in either evaluation.

  The fuse operation was good when the deposited film resistance was in the range of 5Ω / □ to 9Ω / □.

  As described above, according to the present invention, by setting the electrical resistance value of the vapor deposition electrode to 10Ω / □ to 11Ω / □ from the conventional value to 5Ω / □ to 9Ω / □, the conventional plastic or metal case and the filling resin Even if the exterior made of the above is replaced with an exterior made of powder resin, the moisture resistance can be secured without impairing the voltage resistance. In addition, the shape of the film capacitor can be reduced and the manufacturing cost can be reduced.

(Embodiment 2)
FIG. 3 is a cross-sectional view of a film capacitor according to Embodiment 2 of the present invention, and FIGS. 4A and 4B are bird's-eye views of a pair of metallized films used in the film capacitor shown in FIG. The present embodiment is different from the first embodiment only in that the vapor deposition electrode on the side from the substantially central portion of the width of the effective electrode portion toward the insulation margin is formed on the grid-like divided electrode. The same reference numerals are given to the parts having the operational effects, and detailed description will be omitted, and different points will be mainly described.

  3 and 4 (a) and 4 (b), the vapor deposition electrodes 1a and 1b provided with an electric resistance value of 5Ω / □ to 9Ω / □ by a vacuum vapor deposition method are effective electrodes for forming a capacitance. Is divided into a plurality of grid-like divided electrodes 32a and 32b by slits 5a and 5b having no vapor deposition electrode on the side from the substantially central portion of the width W of the portion toward the insulation margins 4a and 4b, and by fuses 7a and 7b. Connected in parallel.

  With this configuration, in the film capacitor having a self-safety function in which the heat generated by the fuse is small, the electrical resistance value of the deposited electrodes 1a and 1b is 5Ω / □ to 9Ω / □, so that the electrical resistance value is 10Ω / □ to the conventional value. Compared to 11Ω / □, the thickness of the vapor deposition electrodes 1a and 1b is substantially increased. As a result, the moisture resistance of the film capacitor can be improved.

(Embodiment 3)
5 is a cross-sectional view of the film capacitor according to Embodiment 3 of the present invention, and FIGS. 6A and 6B are bird's-eye views of the front and back vapor deposition electrodes in the double-sided metallized film used in the film capacitor shown in FIG. is there. The present embodiment is different from the first embodiment in that a pair of vapor deposition electrodes are provided separately on both surfaces of one dielectric film, and the other dielectric film is formed as it is without depositing metal. However, the same code | symbol is attached | subjected to the part which show | plays the same structure and effect other than that, detailed description is abbreviate | omitted, and it demonstrates centering on a different location.

  5 and 6 (a) and 6 (b), vapor deposition electrodes 1a and 1b, which are non-divided electrodes provided so as to have an electric resistance value of 5Ω / □ to 9Ω / □ by vacuum vapor deposition, It is formed on both sides of the body film 53a, and is connected to the metallicons 6a and 6b on both end surfaces, and is superimposed on the undeposited raw dielectric film 53b. The vapor deposition electrodes 1a and 1b are divided into a plurality of grids by slits 5a and 5b having no vapor deposition electrodes on the side from the substantially central portion of the width W of the effective electrode portion forming the capacitance toward the insulation margins 4a and 4b. The electrodes are divided into electrodes 32a and 32b, and are connected in parallel by fuses 7a and 7b.

  According to this configuration, the same effect as described in the first embodiment can be obtained, and the vapor deposition electrodes 1a and 1b can be provided in one vapor deposition step, so that a film capacitor can be manufactured at a lower cost. can do.

(Embodiment 4)
7 is a cross-sectional view of a film capacitor according to Embodiment 4 of the present invention, and FIGS. 8A and 8B are bird's-eye views of a pair of metallized films used in the film capacitor shown in FIG. The present embodiment is different from the first embodiment only in that an improvement is made to a pair of vapor deposition electrodes, and other parts having the same configuration and operational effects are denoted by the same reference numerals and detailed description is given. Omitted and the description will focus on the differences.

  7 and 8 (a) and 8 (b), the vapor deposition electrode 1a provided on the dielectric film 3a is located substantially at the center and is in the longitudinal direction of the dielectric film 3a (longitudinal direction of the dielectric film). Are separated into different potentials by an insulating margin 78a extending in the vertical direction, a plurality of divided electrodes 2a are provided by slits 5a on the side from the substantially central portion of the width W of the effective electrode portion toward the insulating margin 78a, and the metallicons 6a and 6b are formed by fuses 7a. It is connected in parallel to the near deposition electrode 1a. Similarly, the vapor deposition electrode 1b provided on the dielectric film 3b has insulating margins 4b extending in the longitudinal direction (longitudinal direction of the dielectric film) at both ends, and from substantially the central portion of the width W of the effective electrode portion. A plurality of divided electrodes 2b are provided by slits 5b on the side toward the insulating margin 4b, and are connected in parallel to vapor deposition electrodes 1b located between the divided electrodes 2b on both sides by fuses 7b. Metallicons 6a and 6b are connected to both ends of vapor deposition electrode 1a.

  According to this configuration, the same operational effects as described in the first embodiment can be obtained, and the two electrodes separated left and right by the insulating margin 78a extending in the longitudinal direction of the dielectric film 3a in the vapor deposition electrode 1a can be obtained. Since the unit capacitors are connected in series, it is possible to use a film capacitor that can be used up to a high voltage, has a self-safety function, and generates little heat by the fuse 7a.

  In the fourth embodiment, one insulating margin 78a is provided, but the present invention is not limited to one.

  In each of the above embodiments, a quadrangular divided electrode has been described as an example. However, the present invention is not limited to this, and other shapes, for example, a diamond-shaped, hexagonal, or triangular lattice-shaped divided electrode. Similar results were obtained in Moreover, although the position of the fuse is provided at each side of the square, it may be provided at the apex.

  Further, even when two or more films were stacked as the dielectric films 3a and 3b, 53a and 53b, the same effect was obtained.

  The same effect can be obtained with a laminated capacitor in which a metallized film is laminated in addition to a wound capacitor that winds capacitor elements one by one.

  In the present invention, the capacity of the film capacitor is not particularly limited, but a film capacitor having a capacity of 10 μF or less is more suitable. In a large-capacity film capacitor, there is a high risk that a large current will flow if a metallized film breaks down, resulting in a through-breakage, resulting in a short circuit. To avoid this, it is necessary to increase the sensitivity of the fuse operation. is there. For this, it is more certain that the electric resistance value of the vapor deposition electrode is higher. On the other hand, in a film capacitor of 10 μF or less, since the current that flows when a dielectric breakdown occurs in the metallized film, it is not necessary to increase the sensitivity of the fuse operation as in the case of a large-capacity film capacitor. Can be made lower than a large-capacity film capacitor. Therefore, if the present invention is adopted for a capacitor of 10 μF or less, the safety function and moisture resistance by the fuse can be secured at a higher level.

  As described above, according to the present invention, it is possible to realize a miniaturized film capacitor having a self-safety function and good moisture resistance.

Sectional drawing of the film capacitor in Embodiment 1 of this invention (A) is a bird's-eye view of one metallized film in the first embodiment, and (b) is a bird's-eye view of the other metallized film in the first embodiment. Sectional drawing of the film capacitor in Embodiment 2 of this invention (A) is a bird's-eye view of one metallized film in the second embodiment, and (b) is a bird's-eye view of the other metallized film in the second embodiment. Sectional drawing of the film capacitor in Embodiment 3 of this invention (A) is a bird's-eye view of one metallized film in the third embodiment, and (b) is a bird's-eye view of the other metallized film in the third embodiment. Sectional drawing of the film capacitor in Embodiment 4 of this invention (A) is a bird's-eye view of one metallized film in the fourth embodiment, and (b) is a bird's-eye view of the other metallized film in the fourth embodiment. Sectional view of film capacitor in Conventional Example 1 (A) is a bird's-eye view of one metallized film in Conventional Example 1, and (b) is a bird's-eye view of the other metallized film in Conventional Example 1. Sectional view of film capacitor in Conventional Example 2 (A) is a bird's-eye view of one metallized film in Conventional Example 2, and (b) is a bird's-eye view of the other metallized film in Conventional Example 2. Sectional drawing of the film capacitor in the prior art example 3 (A) is a bird's-eye view of one metallized film in Conventional Example 3, and (b) is a bird's-eye view of the other metallized film in Conventional Example 3. Cross-sectional view of a conventional film capacitor (A) is a bird's-eye view of one metallized film in the conventional example, (b) is a bird's-eye view of the other metallized film in the conventional example. Cross-sectional view of a conventional film capacitor

Explanation of symbols

1a, 1b Evaporation electrode 2a, 2b Divided electrode 3a, 3b Dielectric film 4a, 4b Insulation margin 5a, 5b Slit 6a, 6b Metallicon 7a, 7b Fuse 32a, 32b Grid-like divided electrode 53a, 53b Dielectric film 78a Insulation margin W Effective electrode width

Claims (4)

A first dielectric film having a first film surface having an insulation margin at one end and a first vapor deposition electrode, and a second vapor deposition electrode having an insulation margin at the other end A second dielectric film having a second film surface, and first and second metallicons on both end surfaces of the first and second dielectric films. Each of the vapor deposition electrodes is made of aluminum, and a slit having no vapor deposition electrode is provided at a substantially central portion of the width of the effective electrode portion forming the capacitance, and a divided electrode is formed on the side from the slit toward the insulation margin. A fuse on the slit in which a non-divided electrode is formed on the side facing the insulating margin from the slit, and the divided electrode and the non-divided electrode are provided at substantially the center of the width of the effective electrode portion. Connect with The other non-divided electrode is a capacitor disposed so that the other divided electrode faces the other through a dielectric film, the first vapor-deposited electrode and the first metallicon are connected, and the second A film capacitor in which the vapor deposition electrode is connected to the second metallicon, wherein the first and second vapor deposition electrodes have an electric resistance value of 5Ω / □ to 9Ω / □. An undeposited dielectric film and a first film surface having an insulation margin at one end of the dielectric film facing the undeposited dielectric film and providing the first deposition electrode, As the second film surface having an insulation margin on the other end of the back surface of the film surface and providing the second vapor deposition electrode, the first metallicon and the second metallicon are provided on both end surfaces of the dielectric film. The first and second vapor deposition electrodes are both made of aluminum, and a slit having no vapor deposition electrode is provided at the substantially central portion of the width of the effective electrode portion forming the capacitance, and the slit is directed to the insulation margin. A divided electrode is formed on the side, a non-divided electrode is formed on the side facing the insulating margin from the slit, and the divided electrode and the non-divided electrode are arranged at substantially the center of the width of the effective electrode portion. Connected to each other by a fuse on the slit provided on the slit, and the other non-divided electrode is disposed so that the other divided electrode is opposed to the other through a dielectric film, the first vapor deposition electrode and the capacitor In the film capacitor that is in communication with the first metallicon and that is in communication with the second vapor deposition electrode and the second metallicon, the electrical resistance value of the first and second vapor deposition electrodes is 5Ω / □ to 9Ω / A film capacitor characterized by being □. A first dielectric film having a first film surface provided with a first vapor deposition electrode made of aluminum and a second dielectric film having a second film surface provided with a second vapor deposition electrode made of aluminum And a first metallicon and a second metallicon respectively connected to the first vapor deposition electrode on both end faces of the first dielectric film, wherein the first vapor deposition electrode is substantially at the center. Each of the separated first vapor deposition electrodes has a slit having no vapor deposition electrode at substantially the center of the width of the effective electrode portion forming the capacitance. A split electrode is formed on the side facing the insulation margin from the slit, and a non-split electrode is formed on the side facing the insulation margin from the slit. The non-divided electrode is connected by a fuse on the slit provided in the substantially central portion of the effective electrode portion, and the second vapor-deposited electrode has an insulation margin extending in the longitudinal direction at both ends to effectively form a capacitor. A slit that does not have a vapor deposition electrode is provided at a substantially central portion of the width of the electrode portion, a split electrode is formed on the side from the slit toward the insulating margin, and a non-divided side is formed on the side facing the insulating margin from the slit. An electrode is formed, and the divided electrode and the non-divided electrode are connected by a fuse on the slit provided at a substantially central portion of the width of the effective electrode portion, and the other divided electrode is connected to one non-divided electrode Is a film capacitor arranged so as to face each other through a dielectric film, wherein the first and second vapor deposition electrodes have electrical resistance values of 5Ω / □ to 9Ω / □. Capacitors. 4. The film capacitor according to claim 1, wherein the divided electrodes are each divided into a plurality of grid-shaped divided electrodes and connected in parallel by a fuse. 5.

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