JP2009238878A - Plasma processing device - Google Patents

Abstract

A plasma processing apparatus capable of generating various types of plasma with a single unit, enabling various surface treatments on a substrate, and improving production efficiency.
A rotary coupler 32 that is rotated by a motor is disposed in a processing chamber, and a spot type direct plasma electrode unit U11, a line type direct plasma electrode unit U12, a spot type remote plasma electrode unit U13, a line are arranged on the rotary coupler 32. Type remote plasma electrode unit U14 was fixed. Then, the rotary coupler 32 is rotated so that a desired one of the electrode units U11 to U14 is selected and arranged to face a predetermined surface position of the substrate.
[Selection] Figure 8

Description

  The present invention relates to a plasma processing apparatus.

2. Description of the Related Art Conventionally, a plasma processing apparatus is known that generates plasma with a discharge plasma electrode and exposes the plasma to the surface of the substrate to process the surface of the substrate.
This type of plasma processing apparatus includes a pair of electrodes arranged opposite to each other, supplies a gas to a gap formed between the electrodes, applies a high-frequency voltage between the electrodes, and causes a discharge to generate plasma. Is generated. By exposing the generated plasma to the surface of the substrate, the substrate surface is subjected to plasma treatment. In other words, active species such as excited molecules, radical atoms, and excited ions in the plasma cause various reactions on the surface of the substrate, and surface treatment of the substrate (for example, surface modification, ashing, etching, deposition, etc.) It is something to be made.

  By the way, the plasma includes a line type plasma in which the plasma is formed in a line shape and a spot type plasma in which the plasma is formed in a spot shape (for example, Patent Document 1 and Patent Document 2).

In addition, in order to prevent damage to the substrate, the line type plasma and the spot type plasma are generated at a position separated from the substrate, and the generated plasma is supplied to the surface of the substrate. For example, Patent Document 1 and Patent Document 2), there is a direct type plasma in which a substrate is disposed on the ground side in order to cause plasma to directly and directly act on the substrate, and the generated plasma acts on the surface of the substrate. (For example, Patent Document 3)
JP-A-4-358076 Japanese Patent Application Laid-Open No. 11-67736 JP 2004-343026 A

  However, in order to generate these various plasmas, it is necessary to prepare plasma processing apparatuses each having a dedicated plasma electrode unit. Accordingly, the multipurpose substrate surface treatment cannot be performed with one apparatus, and the production efficiency is poor.

  The present invention has been made to solve the above-described problems, and its purpose is to generate various types of plasma with a single unit, enable various surface treatments on the substrate, and improve production efficiency. An object of the present invention is to provide a plasma processing apparatus that can perform the above process.

  The plasma processing apparatus of the present invention is exposed to plasma generated by a plasma electrode unit supported by a support device provided in the processing chamber on the surface of a substrate placed on a stage provided in the processing chamber, A plasma processing apparatus for processing the surface of the substrate, wherein the support device is provided with a coupler having a connecting portion detachably connected to a connected portion provided in the plasma electrode unit.

  According to the plasma processing apparatus of the present invention, the coupler is provided with the connecting portion, the plasma electrode unit is provided with the connected portion, and the plasma electrode unit is detachably connected and fixed to the coupler. Various plasmas can be generated by the apparatus, various surface treatments can be performed on the substrate, and production efficiency can be improved.

In this plasma processing apparatus, the connected portion provided in the plasma electrode unit may be a bolt, and the connecting portion provided in the coupler may be a screw hole.
According to this plasma processing apparatus, since the coupling structure of the coupler and the plasma electrode unit is performed with the screw holes and the bolts, the replacement operation can be performed very easily.

(First embodiment)
Hereinafter, a first embodiment of a discharge plasma processing apparatus of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic external view for explaining the plasma processing apparatus 10. In the plasma processing apparatus 10, an XY direction moving device 12 is provided on a bottom surface 11 a of a processing chamber 11, and an electrode stage 13 is connected and fixed as a ground electrode to an operating arm 12 a of the XY direction moving device 12.

  The XY direction moving device 12 moves the electrode stage 13 in the main scanning direction (left and right direction in FIG. 1) via the operating arm 12a, and at the same time the sub scanning direction (in FIG. 1 with respect to the paper surface). (Vertical direction).

  The electrode stage 13 is formed of stainless steel. The electrode stage 13 has a substrate 14 placed on its placement surface 13a. Accordingly, the substrate 14 placed on the electrode stage 13 is moved and guided in the main scanning direction and the sub-scanning direction in the processing chamber 11.

  Examples of the substrate 14 include a material containing a component that reacts with active atoms (radicals) contained in plasma to vaporize a reactant. In this embodiment, for example, a silicon (Si) substrate is used.

  A support device 15 is provided on the upper surface in the processing chamber 11, and a coupler 16 is provided below the support device 15 so as to be movable in the vertical direction. The coupler 16 is made of stainless steel, and an inverted frustoconical fitting hole 17 is recessed in the lower surface thereof. A screw hole 18 as a connecting portion is formed in the inner surface of the fitting hole 17.

  In FIG. 1, the coupler 16 is equipped with a spot type direct plasma electrode unit U1. As shown in FIG. 3, the spot type plasma electrode unit U <b> 1 has a columnar cathode electrode portion 21 and a truncated cone-shaped base electrode portion 22 formed integrally with a base end portion of the cathode electrode portion 21. The base electrode portion 22 having a truncated cone shape is fitted into the fitting hole 17 having an inverted truncated cone shape of the coupler 16. Also, a bolt 23 as a connected portion that is screwed into the screw hole 18 formed in the fitting hole 17 is attached to the opposite surface of the base electrode portion 22 where the cathode electrode portion 21 is not provided. .

  As shown in FIG. 2, in the spot type direct plasma electrode unit U <b> 1, when a bolt 23 provided on the base electrode portion 22 is screwed into the screw hole 18 with the coupler 16 disposed on the uppermost side, Can be easily connected and fixed. The outer peripheral surface of the base electrode portion 22 and the inner peripheral surface of the fitting hole 17 are in close contact and electrically connected. Next, the position of the coupler 16 in the height direction is adjusted with respect to the support device 15, and the electrode unit U <b> 1 is set at an optimum distance from the substrate 14.

  A plasma gas is supplied between the lower surface of the cylindrical cathode electrode portion 21 and the substrate 14, and a high frequency voltage is applied between the cathode electrode portion 21 and the electrode stage 13 on which the substrate 14 is placed. The Here, the plasma gas is a gas that generates plasma by dissociating contained gas molecules by the action of a high-frequency voltage (the action of an electric field). For example, helium (He) gas, Ar (argon) gas or the like is used. For example, a mixed gas of a carrier gas and a processing gas. The processing gas varies depending on the constituent material of the substrate 14 to be etched. When the constituent material of the substrate 14 is the aforementioned silicon compound, a fluorine-based gas such as CF4, CHF3, C2F6, SF6, a chlorine gas such as CCl4, or the like is used.

  As a result, an electric field whose direction is reversed at a high frequency is induced between the cathode electrode portion 21 and the substrate 14, and molecules of the plasma gas existing between the cathode electrode portion 21 and the substrate 14 are ionized to form a spot shape. The plasma can be generated.

  When the spot type direct plasma electrode unit U1 is removed from the coupler 16, the direct plasma electrode unit U1 is turned in the opposite direction to the connection, so that the bolt 23 provided on the base electrode portion 22 is removed from the screw hole 18. Therefore, the spot type direct plasma electrode unit U1 can be easily detached from the coupler 16.

  By the way, even if the coupler 16 is a plasma electrode unit other than the spot type direct plasma electrode unit U1, as long as it is a plasma electrode unit provided with the base electrode portion 22 and the bolt 23, it is the same as the spot type direct plasma electrode unit U1. Removably connected and fixed.

  4 shows a line-type direct plasma electrode unit U2, FIG. 5 shows a spot-type remote plasma electrode unit U3, and FIG. 6 shows a line-type mote plasma electrode unit U4. Both electrode units U2 to U4 are removed from the coupler 16. It can be connected and fixed as possible.

More specifically, the line type direct plasma electrode unit U2 shown in FIG. 4 includes a plate-like cathode electrode portion 25 in place of the columnar cathode electrode portion 21.
A plasma gas is supplied between the lower surface of the flat cathode electrode portion 25 and the substrate 14, and a high frequency voltage is applied between the cathode electrode portion 25 and the electrode stage 13 on which the substrate 14 is placed. It has become so. As a result, an electric field whose direction is reversed at a high frequency is induced between the cathode electrode portion 25 and the substrate 14, and plasma gas molecules existing between the cathode electrode portion 25 and the substrate 14 are ionized to form a line shape. The plasma can be generated.

  Further, the spot type remote plasma electrode unit U3 shown in FIG. 5 is provided with a cylindrical cathode electrode portion 26 on a base electrode portion 22 provided with a bolt 23, and is grounded to the outer periphery of the cylindrical cathode electrode portion 26. A tapered cylindrical anode electrode portion 27 is provided. The columnar cathode electrode portion 26 and the tapered cylindrical anode electrode portion 27 are spaced apart by a spacing member made of an insulator (not shown).

  A plasma gas is supplied to the separated space from the base electrode portion 22 side, and a high frequency voltage is applied between the cathode electrode portion 26 and the anode electrode portion 27. At this time, the electrode stage 13 is not grounded.

  As a result, an electric field whose direction is reversed at a high frequency is induced between the electrode portions 26 and 27, and molecules of the plasma gas existing between the electrode portions 26 and 27 are ionized to generate plasma. be able to. The plasma generated between the electrode portions 26 and 27 is led out from the tip opening portion 27 a of the anode electrode portion 27 and supplied as spot-like plasma to the surface of the substrate 14.

  Further, the line type remote plasma electrode unit U4 shown in FIG. 6 includes a flat cathode electrode portion 28 instead of the cylindrical cathode electrode portion 21, and is opposed to the flat cathode electrode portion 28. A flat plate-like anode electrode portion 29 that is grounded is provided at such a position. The flat cathode electrode part 28 is connected and fixed to the base electrode part 22 through a metal plate 22a. The flat cathode electrode portion 28 and the flat anode electrode portion 29 are spaced apart by a spacing member made of an insulator (not shown).

  A plasma gas is supplied to the separated space from the base electrode portion 22 side, and a high frequency voltage is applied between the cathode electrode portion 28 and the anode electrode portion 29. At this time, the electrode stage 13 is not grounded.

  As a result, an electric field whose direction is reversed at a high frequency is induced between the electrode portions 28 and 29, and molecules of the plasma gas existing between the electrode portions 28 and 29 are ionized to generate plasma. Can do. The plasma generated between the electrode portions 28 and 29 is led out from the separated space and supplied to the surface of the substrate 14 as line-shaped plasma.

Therefore, the electrode units U1 to U4 can be detachably connected and fixed to the coupler 16.
Next, effects of the embodiment configured as described above will be described below.

  (1) According to the above embodiment, the spot-type direct plasma electrode unit U1, the line-type direct plasma electrode unit U2, the spot-type remote plasma electrode unit U3, the line-type remote plasma with respect to the coupler 16 provided in the support device 15 The electrode unit U4 can be detachably connected and fixed. Therefore, various plasmas can be generated by one plasma processing apparatus 10, various surface treatments can be performed on the substrate 14, and production efficiency can be improved.

(2) Moreover, according to the above embodiment, since the coupling structure of the coupler 16 and each of the electrode units U1 to U4 is performed by the screw hole 18 and the bolt 23, the replacement of the electrode units U1 to U4 with respect to the coupler 16 is performed. The work can be done very easily.
(Second Embodiment)
Next, a first embodiment of the discharge plasma processing apparatus of the present invention will be described with reference to the drawings. For convenience of explanation, the same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  FIG. 7 is a schematic external view for explaining the plasma processing apparatus 30. In the plasma processing apparatus 30, an electrode stage 13 is connected and fixed as a ground electrode to an operating arm 12 a of an XY direction moving apparatus 12 provided on the bottom surface 11 a of the processing chamber 11. Then, the substrate 14 is placed on the placement surface 13 a of the electrode stage 13.

  A motor 31 as a table moving means is provided on the upper surface in the processing chamber 11, and a rotary coupler 32 as a table is fixed to a rotary shaft 31 a protruding from the motor 31. The rotary coupler 32 is a disk-shaped insulator and is arranged in parallel with the electrode stage 13. The rotary coupler 32 rotates around the rotation shaft 31a by the rotation of the rotation shaft 31a of the motor 31.

  As shown in FIG. 8, the disk-shaped rotary coupler 32 has, on its lower surface 32a, a spot type direct plasma electrode unit U11, a line type direct plasma electrode unit U12, a spot type remote plasma electrode unit U13, and a line type. The remote plasma electrode unit U14 is fixed.

  The spot type direct plasma electrode unit U11 is different from the spot type direct plasma electrode unit U1 of the first embodiment in that the base electrode part 22 and the bolt 23 are not provided. The electrode unit U11 has a cylindrical cathode electrode portion 21 fixed to a rotary coupler 32.

  The line type direct plasma electrode unit U12 is different from the line type direct plasma electrode unit U2 of the first embodiment in that the base electrode part 22 and the bolt 23 are not provided. The electrode unit U12 has a flat cathode electrode portion 25 fixed to the rotary coupler 32.

  The spot type remote plasma electrode unit U13 is different from the spot type remote plasma electrode unit U3 of the first embodiment in that the base electrode portion 22 and the bolt 23 are not provided. In the electrode unit U13, a columnar cathode electrode portion 26 holding a tapered cylindrical anode electrode portion 27 is fixed to a rotary coupler 32 via a spacing member (not shown).

  The line type remote plasma electrode unit U14 is different from the line type remote plasma electrode unit U4 of the first embodiment in that the base electrode part 22 and the bolt 23 are not provided. In the electrode unit U14, a flat cathode electrode portion 28 holding a flat anode electrode portion 29 is fixed to the rotary coupler 32 via a spacing member (not shown).

  Therefore, by rotating the rotating shaft 31a of the motor 31 and rotating the rotating coupler 32, a desired one of the electrode units U11 to U14 provided on the lower surface 32a of the rotating coupler 32 is selected and the substrate 14 is moved. It can be arranged to face a predetermined surface position.

  Then, the rotary coupler 32 is rotated so that the spot type direct plasma electrode unit U11 is disposed to face the predetermined surface position of the substrate 14. Next, plasma gas is supplied between the lower surface of the cathode electrode portion 21 of the electrode unit U11 and the substrate 14, and a high frequency voltage is applied between the cathode electrode portion 21 and the electrode stage 13 on which the substrate 14 is placed. .

  As a result, an electric field whose direction is reversed at a high frequency is induced between the cathode electrode portion 21 and the substrate 14, and molecules of the plasma gas existing between the cathode electrode portion 21 and the substrate 14 are ionized to form a spot shape. Plasma is generated.

  Further, the rotary coupler 32 is rotated so that the line type direct plasma electrode unit U12 is disposed to face the predetermined surface position of the substrate 14. Next, a plasma gas is supplied between the lower surface of the flat cathode electrode portion 25 of the electrode unit U12 and the substrate 14, and a high frequency voltage is applied between the cathode electrode portion 25 and the electrode stage 13 on which the substrate 14 is placed. Apply.

  As a result, an electric field whose direction is reversed at a high frequency is induced between the cathode electrode portion 25 and the substrate 14, and plasma gas molecules existing between the cathode electrode portion 25 and the substrate 14 are ionized to form a line shape. Plasma is generated.

  Further, the rotary coupler 32 is rotated so that the spot-type remote plasma electrode unit U13 is opposed to a predetermined surface position of the substrate 14. Next, plasma gas is supplied between the cathode electrode portion 26 and the anode electrode portion 27, and a high frequency voltage is applied between the cathode electrode portion 26 and the anode electrode portion 27.

  As a result, an electric field whose direction reverses at a high frequency is induced between the electrode portions 26 and 27, and plasma gas molecules existing between the electrode portions 26 and 27 are ionized to generate plasma. The plasma generated between the electrode portions 26 and 27 is led out from the tip opening portion 27 a of the anode electrode portion 27 and supplied as a spot-like plasma to a predetermined surface position of the substrate 14.

  Further, the rotary coupler 32 is rotated so that the line-type remote plasma electrode unit U14 is opposed to the substrate 14 at a predetermined position. Next, plasma gas is supplied between the cathode electrode portion 28 and the anode electrode portion 29, and a high frequency voltage is applied between the cathode electrode portion 28 and the anode electrode portion 29.

  As a result, an electric field whose direction reverses at a high frequency is induced between the electrode portions 28 and 29, and plasma gas molecules existing between the electrode portions 28 and 29 are ionized to generate plasma. Plasma generated between the electrode portions 28 and 29 is led out from the separated space and supplied as a line-shaped plasma to a predetermined surface position of the substrate 14.

Next, effects of the embodiment configured as described above will be described below.
(1) According to the above embodiment, with respect to the rotary coupler 32 rotated by the motor 31, the spot type direct plasma electrode unit U11, the line type direct plasma electrode unit U12, the spot type remote plasma electrode unit U13, the line type The remote plasma electrode unit U14 was fixed. Then, the rotary coupler 32 is rotated so that a desired one of the electrode units U11 to U14 is selected and arranged to face a predetermined surface position of the substrate 14.

Accordingly, various plasmas can be generated by one plasma processing apparatus 30, various surface treatments can be performed on the substrate 14, and production efficiency can be improved.
(2) In addition, according to the above-described embodiment, a desired one of the electrode units U11 to U14 can be selected and disposed to face a predetermined surface position of the substrate 14 simply by rotating the rotary coupler 32. Therefore, it is possible to change to various plasma treatments very easily and in a short time.

In addition, you may change the said embodiment as follows.
In the first embodiment, four types of the spot type direct plasma electrode unit U1, the line type direct plasma electrode unit U2, the spot type remote plasma electrode unit U3, and the line type remote plasma electrode unit U4 are exchanged for the coupler 16. It was possible. This may be performed so that other plasma electrode units can be exchanged for the coupler 16.

  In the first embodiment, each plasma electrode unit U1 to U4 is detachably connected to the coupler 16 by the bolt 23 and the screw hole 18, but may be detachably connected by other methods.

  In the second embodiment, four types of spot type direct plasma electrode unit U11, line type direct plasma electrode unit U12, spot type remote plasma electrode unit U13, and line type remote plasma electrode unit U14 are attached to the rotary coupler 32. . This may be performed by further attaching a plasma electrode unit different from these to the rotary coupler 32.

  In the second embodiment, four types of spot type direct plasma electrode unit U11, line type direct plasma electrode unit U12, spot type remote plasma electrode unit U13, and line type remote plasma electrode unit U14 are attached to the rotary coupler 32. . This may be performed by reducing at least one of them and attaching two or three plasma electrode units to the rotary coupler 32.

  In the second embodiment, different plasma electrode units are attached to the rotary coupler 32. This may be performed by attaching the same one to the multi-rotation coupler 32. In this case, even if one plasma electrode unit becomes unusable due to damage or the like, it can be immediately replaced with a new one.

1 is a schematic external view for explaining a plasma processing apparatus according to a first embodiment. Explanatory drawing for demonstrating the connection of a plasma electrode unit and a coupler. The perspective view of a spot type direct plasma electrode unit. The perspective view of a line type direct plasma electrode unit. The perspective view of a spot type remote plasma electrode unit. The perspective view of a line type remote plasma electrode unit. The schematic external view for demonstrating the plasma processing apparatus of 2nd Embodiment. Explanatory drawing for demonstrating connection with each plasma electrode unit and a coupler.

Explanation of symbols

  U1, U11 ... Spot type direct plasma electrode unit, U2, U12 ... Line type direct plasma electrode unit, U3, U13 ... Spot type remote plasma electrode unit, U4, U14 ... Line type remote plasma electrode unit, 10, 30 ... Plasma treatment Apparatus, 11 ... processing chamber, 15 ... support device, 16 ... coupler, 17 ... fitting hole, 18 ... screw hole, 21, 25, 28 ... cathode electrode part, 22 ... base electrode part, 23 ... bolt, 27, 29 ... Anode electrode part, 31 ... motor, 32 ... rotary coupler.

Claims (6)

A plasma processing apparatus that exposes plasma generated by a plasma electrode unit to a surface of a substrate placed on a stage provided in a processing chamber, and processes the surface of the substrate,
A table disposed at an upper position of the stage and having a plurality of plasma electrode units attached to the lower side thereof;
A plasma processing apparatus, comprising: a table moving means for moving the table and disposing one of the plasma electrode units arranged on the table at a predetermined upper position of the substrate. The plasma processing apparatus according to claim 1,
The plasma processing apparatus, wherein the plurality of plasma electrode units are different types of plasma electrode units. The plasma processing apparatus according to claim 2, wherein
The plasma processing apparatus, wherein the plurality of plasma electrode units are a spot type direct plasma electrode unit, a line type direct plasma electrode unit, a spot type remote plasma electrode unit, and a line type remote plasma electrode unit. In the plasma processing apparatus of any one of Claims 1-3,
The plasma processing apparatus, wherein the table is a disk-shaped rotary coupler, and the table moving means is a motor. Plasma that processes the surface of the substrate by exposing the surface of the substrate placed on a stage provided in the processing chamber to plasma generated by a plasma electrode unit supported by a support device provided in the processing chamber. A processing device comprising:
A plasma processing apparatus, wherein the support device is provided with a coupler having a connecting portion detachably connected to a connected portion provided in the plasma electrode unit. The plasma processing apparatus according to claim 5, wherein
The plasma processing apparatus, wherein the connected portion provided in the plasma electrode unit is a bolt, and the connecting portion provided in the coupler is a screw hole.

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