JP2009218384A - Substrate processing apparatus, and method of manufacturing organic electroluminescence device - Google Patents

Abstract

The present invention provides a substrate processing apparatus and an organic EL device manufacturing method that do not require much labor and time for installation and change of processing order.
In a substrate processing apparatus for manufacturing an organic EL device or the like, a belt 53 is stretched between a pair of rollers 54a and 54b inside a substrate transfer chamber 32 connecting fixed chambers 15b and 15d. The substrate 53 is integrally formed with the belt 53. When the rollers 54 a and 54 b are rotated, the substrate mounting portion 51 also moves together with the belt 53. For this reason, even when the belt 53 is suddenly accelerated or decelerated rapidly, the position of the substrate mounting portion 51 does not shift, so that the substrate 1 to be processed can be conveyed at high speed. In addition, the number of rotating shafts 54c and 54d drawn out from the substrate transfer chamber 32 to the outside is small.
[Selection] Figure 4

Description

  The present invention relates to a substrate processing apparatus for processing a substrate to be processed in an atmosphere different from air, and a method for manufacturing an organic electroluminescence device.

  2. Description of the Related Art A substrate processing apparatus used when manufacturing an organic electroluminescence (Electro Luminescence) device (hereinafter referred to as an organic EL device), a liquid crystal device, a semiconductor device, and the like has a plurality of chambers for processing a substrate to be processed. (For example, refer to Patent Document 1).

In such a substrate processing apparatus, when the substrate to be processed is transferred through the substrate transfer chamber, for example, as shown schematically in FIG. 6A and FIG. A plurality of rollers 1054 are arranged in parallel to the inside of the substrate 1032 in the transport direction of the substrate 1 to be processed (the direction indicated by the arrow B), and the rollers 1054 are rotated to rotate the substrate to be processed. In many cases, a system in which a tray 1051 loaded with 1 is moved on a roller is employed. In the case of such a substrate transport mechanism, since it is necessary to drive each of the plurality of rollers 1054, the rotation shaft 1056 of the roller 1054 is pulled out of the substrate transport chamber 1032 and driven with the rotation shaft 1056 outside the substrate transport chamber 1032. The device 1055 is connected via a transmission mechanism 1057. Note that the configuration of the substrate transfer chamber 1032 shown in FIG. 6 has been devised by the inventor of the present invention to explain the characteristics of the present invention, and is different from the prior art.
JP 2006-190894 A

  However, in the case of the substrate transport mechanism shown in FIGS. 6A and 6B, since the tray 1051 moves on the roller 1054, the position of the tray 1051 shifts when sudden acceleration or deceleration is performed. There is a problem that the processing substrate 1 cannot be conveyed at high speed. In order to maintain the chamber 1013 in an atmosphere different from the atmosphere, for example, a vacuum atmosphere or an inert gas atmosphere, the substrate transfer chamber 1032 is preferably maintained in an atmosphere different from the atmosphere. In the case of the substrate transfer mechanism shown in (b), since it is necessary to pass a large number of rotating shafts 1056 through the wall surface of the substrate transfer chamber 1032, there are many through portions and leakage at the through portions is completely prevented. However, there is a problem that a large equipment cost is required.

  In view of the above problems, an object of the present invention is to provide a substrate processing apparatus that can transfer a substrate to be processed in a substrate transfer chamber at a high speed.

  Another object of the present invention is to provide a substrate processing apparatus suitable for holding the substrate transfer chamber in an atmosphere different from the atmosphere.

  In order to solve the above problems, in the present invention, in the substrate processing apparatus comprising a plurality of chambers held in an atmosphere different from the atmosphere and one or more substrate transfer chambers connecting the plurality of chambers, the substrate Inside the transfer chamber, a pair of rollers that are separated in the transfer direction of the substrate to be processed, a belt that is stretched between the pair of rollers and moves in the transfer direction of the substrate to be processed, and the belt are integrated. And a board mounting portion to be pulled by the belt.

  In the substrate processing apparatus to which the present invention is applied, a belt is stretched between a pair of rollers inside the substrate transfer chamber, and since the belt is integrally formed with the substrate mounting portion, the roller is rotated. Then, the substrate mounting portion moves together with the belt. Thus, since the substrate mounting portion is integrated with the belt, the substrate mounting portion is not displaced even when the belt is suddenly accelerated or decelerated, so that the substrate to be processed can be conveyed at high speed.

  The present invention is particularly effective when applied when the substrate transfer chamber is held in an atmosphere different from the atmosphere. That is, when a substrate mounting portion such as a tray on which a substrate to be processed is mounted is transported by a roller, it is necessary to pull out the rotation shaft from each of a plurality of rollers arranged in the substrate transport direction to the outside of the substrate transport chamber. According to the invention, since at least two rollers are sufficient, the number of rotating shafts drawn out from the inside of the substrate transfer chamber to the outside is small. Therefore, it is easy to configure the substrate transfer chamber in an airtight state.

  In the present invention, it is preferable that the roller is driven by a driving device disposed outside the substrate transfer chamber. If comprised in this way, it can prevent that a board | substrate conveyance chamber is contaminated with the foreign material which generate | occur | produces from a drive device.

  In the present invention, it is preferable that the belt is an endless belt having both ends fixed to the pair of rollers, and the roller can rotate in both directions to drive the belt in both directions. This configuration has an advantage that the positional accuracy of the substrate to be processed is high because the positional deviation between the roller and the belt is less likely to occur compared to the case where an endless belt is used.

  In the present invention, the belt is preferably made of a metal such as stainless steel. This configuration has the advantage that the life of the belt is long.

  In the present invention, it is preferable that a guide for defining the posture and movement path of the substrate mounting portion is disposed inside the substrate transfer chamber. Such a guide preferably extends in a rail shape. If comprised in this way, the attitude | position and movement path | route of the said board | substrate mounting part can be controlled with high precision, without arrange | positioning a guide roller etc. in the middle position of the extension direction of a belt.

  According to the present invention, an organic material for sequentially performing a plurality of processes on a substrate to be processed in a substrate processing apparatus including a plurality of chambers maintained in an atmosphere different from the atmosphere and one to a plurality of substrate transfer chambers connecting the plurality of chambers. In the method for manufacturing an EL device, a pair of rollers spaced apart in the transport direction of the substrate to be processed and a stretch of the substrate to be processed are stretched between the pair of rollers inside the one or more substrate transport chambers. A belt that moves in the transport direction and a substrate mounting portion that is integrated with the belt and is pulled by the belt are provided, and the substrate to be processed is mounted on the substrate mounting portion by moving the belt. In this state, the substrate is transferred in the substrate transfer chamber.

  Embodiments of the present invention will be described below. In the drawings to be referred to in the following description, the scales of the layers and the members are different from each other in order to make the layers and the members large enough to be recognized on the drawings. Before describing a substrate processing apparatus to which the present invention is applied, the configuration of an organic EL device and a manufacturing method thereof will be described as examples of various electro-optical devices and semiconductor devices manufactured using the substrate processing apparatus. deep.

[Overview of organic EL device]
(Configuration of organic EL device)
FIGS. 1A and 1B are a plan view of a planar configuration of an organic EL device to which the present invention is applied as viewed from the second substrate side together with each component, and a JJ ′ sectional view thereof. . In addition, illustration of a color filter layer etc. is abbreviate | omitted in FIG.1 (b).

  1A and 1B, in the organic EL device 100 of this embodiment, a first substrate 110 as an element substrate and a second substrate 120 that functions as both a sealing substrate and a color filter layer substrate are provided. In the first substrate 110, the second substrate 120 is disposed so as to overlap the surface side on which the plurality of organic EL elements 180 are formed.

  The first substrate 110 and the second substrate 120 are bonded together by the first sealing material layer 191 and the second sealing material layer 192. The detailed configuration of the first sealing material layer 191 and the second sealing material layer 192 will be described later. As shown in FIG. 1A, the first sealing material layer 191 is indicated by a region where dots are densely attached. A frame is formed along a peripheral region 110c surrounding the pixel region 110a. On the other hand, the second sealing material layer 192 is formed over the entire area surrounded by the first sealing material layer 191 as shown in the area where dots are sparsely attached in FIG. Yes. In the first substrate 110, a terminal 102 is formed in a projecting region from the second substrate 120. In the first substrate 110, a data line driving circuit and a scanning line driving circuit (not shown) are formed using the peripheral region 110c and a region sandwiched between the pixel region 110a and the peripheral region 110c.

(Configuration of organic EL element)
FIG. 2 is a cross-sectional view schematically showing a detailed cross-sectional configuration of an organic EL device to which the present invention is applied. FIG. 2 shows only three organic EL elements corresponding to red (R), green (G), and blue (B) as organic EL elements.

  As shown in FIG. 2, the first substrate 110 includes a support substrate 110d made of a quartz substrate, a glass substrate, a ceramic substrate, a metal substrate, or the like. Insulating films 111, 112, 113, 114, and 115 are formed on the surface of the support substrate 110 d, and an organic EL element 180 is formed on the insulating film 115. In this embodiment, the insulating films 111, 112, 113, and 115 are formed of a silicon oxide film, a silicon nitride film, or the like formed by a CVD (Chemical Vapor Deposition) method or the like, and the insulating film 114 has a thickness of 1.5. It is formed as a planarizing film made of a thick photosensitive resin having a thickness of ˜2.0 μm. The insulating film 111 is a base insulating layer, and although not shown, a thin film transistor and a wiring for controlling energization to the organic EL element 180 are formed using an interlayer between the insulating films 111, 112, 113, and 114. .

  The organic EL device 100 of this embodiment is a top emission type, and as shown by an arrow L1, light is extracted from the side where the organic EL element 180 is formed as viewed from the support substrate 110d. Opaque substrates such as ceramics, stainless steel, etc. can be used. Further, a light reflecting layer 141 made of aluminum, silver, or an alloy thereof formed by a vacuum deposition method or the like is formed between the insulating films 114 and 115, and is directed from the organic EL element 180 toward the support substrate 110d. Light can be emitted by reflecting the emitted light by the light reflecting layer 141. Note that when the organic EL device 100 is configured as a bottom emission type, light is extracted from the support substrate 110d side, and thus a transparent substrate such as glass is used as the support substrate 110d.

  In the first substrate 110, a first electrode layer 181 (anode / pixel electrode) made of an ITO film or the like is formed in an island shape on the insulating film 115, and a light emitting region is formed on the upper layer of the first electrode layer 181. A thick partition 151 made of a photosensitive resin or the like having an opening for defining is formed.

  An organic functional layer 182 and a second electrode layer 183 (cathode) are laminated on the upper layer of the first electrode layer 181, and the organic EL element is formed by the first electrode layer 181, the organic functional layer 182 and the second electrode layer 183. 180 is formed. In this embodiment, the organic functional layer 182 and the second electrode layer 183 are formed over the entire surface of the pixel region 110a including the region where the partition wall 151 is formed.

In this embodiment, the organic functional layer 182 includes a hole injection layer made of a triarylamine (ATP) multimer, a TPD (triphenyldiamine) -based hole transport layer, a styrylamine-based material containing an anthracene-based dopant or a rubrene-based dopant. A light-emitting layer made of (host) and an electron injection layer made of aluminum quinolinol (Alq ₃ ) in this order, and a second electrode layer 183 made of a thin-film metal such as MgAg is formed thereon. Yes. In addition, an electron injection buffer layer made of LiF may be formed between the organic functional layer 182 and the second electrode layer 183. Among these materials, each layer constituting the organic functional layer 182 and the electron injection buffer layer can be sequentially formed by a vacuum deposition method. Further, the metal material constituting the second electrode layer 183 and the like can be formed by a vacuum deposition method, and the oxide material such as ITO constituting the first electrode layer 181 is formed by an ECR plasma sputtering method or a plasma gun method ion plating. It can be formed by a high-density plasma film forming method such as a method or a magnetron sputtering method.

  In this embodiment, the organic EL element 180 emits white light or mixed color light of red (R), green (G), and blue (B). For this reason, in the organic EL device 100, the red (R), green (G), and blue (B) color filter layers 122 (R) and (B) formed on the second substrate 120 at positions facing the organic EL element 180 ( Full color display is performed by performing color conversion according to G) and (B). For this reason, the second substrate 120 has a translucent support substrate 120d made of a plastic substrate such as polyethylene terephthalate, acrylic resin, polycarbonate, polyolefin, or a glass substrate, and red (R), green (G), blue ( B) Color filter layer 122 (R), (G), (B), color filter layer 122 (R), (G), light shielding layer 123 (black) for preventing leakage of light between (G), (B) Matrix layer), a light-transmitting planarizing film 124, a silicon oxynitride layer, and the like, and a light-transmitting gas barrier layer 125 is formed in this order. In this embodiment, the color filter layers 122 (R), (G), and (B), the light shielding layer 123, the planarization film 124, and the gas barrier layer 125 are formed only in the pixel region 110 a of the second substrate 120, and the peripheral region 110c is not formed. Therefore, the support substrate 120d is exposed in the peripheral region 110c of the second substrate 120. The color filter layers 122 (R), (G), and (B) are layers in which a pigment or dye is mixed in a transparent binder layer, and the light shielding layer 123 is made of a resin containing a black pigment.

(Sealing structure)
In the organic EL device 100 configured as described above, the organic functional layer 182, the second electrode layer 183 used as the cathode, the electron injection layer, and the like are easily deteriorated by moisture, and this deterioration causes deterioration of the electron injection effect. , A non-light-emitting portion called a dark spot is generated. Therefore, in this embodiment, a configuration in which the second substrate 120 is bonded to the first substrate 110 as a sealing substrate and a configuration in which a sealing film 160 described below is formed on the first substrate 110 are used in combination.

First, a sealing film 160 is formed on the first substrate 110 over a region wider than the pixel region 110 a on the second electrode layer 183. As the sealing film 160, in this embodiment, a first layer 161 made of a silicon compound layer laminated on the second electrode layer 183, a second layer 162 made of a resin layer laminated on the first layer 161, In addition, a laminated film including a third layer 163 made of a silicon compound laminated on the second layer 162 is used. The first layer 161 and the third layer 163 are formed by a high-density plasma vapor deposition method using a high-density plasma source, for example, a plasma gun ion plating, ECR plasma sputtering, ECR plasma CVD, surface wave plasma CVD, or ICP-CVD. The film is made up of a silicon nitride (SiN _x ) film or a silicon oxynitride (SiO _x N _y ) film formed by using a thin film, etc., and such a thin film reliably blocks moisture even when formed at a low temperature. Functions as a high density gas barrier layer. The second layer 162 is composed of a resin layer, and serves as an organic buffer layer that flattens the surface irregularities caused by the partition walls 151 and the wirings and prevents the first layer 161 and the second layer 162 from cracking. It is functioning.

  In this embodiment, the first layer 161 and the third layer 163 constituting the sealing film 160 include the pixel region 110a, the vicinity region of the pixel region 110a, and the peripheral region 110c far from the pixel region 110a. 110 is formed on the entire surface. On the other hand, the second layer 162 (organic buffer layer) is thickly formed only in the pixel region 110a and the vicinity region of the pixel region 110a, and is not formed in the peripheral region 110c far from the pixel region 110a. In addition, the insulating films 114 and 115 are generally formed only in the pixel region 110a.

  Next, in this embodiment, as shown in FIGS. 1A, 1B, and 2, the first sealing material layer 191 is disposed between the first substrate 110 and the second substrate 120 along the peripheral region 110c. Is formed in a rectangular frame shape. In addition, a light-transmitting second sealing material layer 192 is formed over the entire region surrounded by the first sealing material layer 191, and the first substrate 110 and the second substrate 120 include the first sealing material layer 191 and the first sealing material layer 191. The two sealing material layers 192 are bonded together. In this embodiment, an epoxy-based adhesive that is cured by ultraviolet rays is used for the first sealing material layer 191 (first sealing material 191a). For the second sealing material layer 192 (second sealing material 192a), an epoxy adhesive that is cured by heat is used.

(Production method)
With reference to FIG. 1A, FIG. 1B, and FIG. 2, the manufacturing method of the organic EL device 100 of this embodiment will be described. In manufacturing the organic EL device 100 of this embodiment, a large number of the first substrate 110 and the second substrate 120 can be taken in addition to the method of bonding the first substrate 110 and the second substrate 120 in a single-size size state. In some cases, the large substrates are bonded together, and then the large substrate is cut into a single size. Regardless of which of these methods is adopted, the basic configuration is the same, so in the following description, the first substrate 110 and the second substrate 120 will be described regardless of the single product size and the large substrate.

  First, the organic EL element 180, the sealing film 160, and the like are formed on the first substrate 110 using a vacuum deposition method, a CVD method, or the like. Next, in the first sealing material application step, the peripheral region 110c of the first substrate 110 is compared with the first substrate 110 by a dispenser drawing in a nitrogen atmosphere, a screen printing method, an ink jet method using a micro piezo head, or the like. The first sealing material 191a made of the above-described photo-curable epoxy resin material is applied to a narrow width dimension of 1 mm or less. At that time, from the viewpoint of applying the first sealing material 191a to a narrow width of 1 mm or less, the viscosity at the time of application of the first sealing material 191a is preferably about 20,000 to 200,000 mPa · s at room temperature. More preferred is about 100,000 mPa · s.

  Next, in the second sealing material application step, in a region surrounded by the first sealing material 191a in the first substrate 110 by a dispenser drawing in a nitrogen atmosphere, a screen printing method, an ink jet method using a micro piezo head, or the like. The second sealing material 192a made of the thermosetting epoxy resin material described above is applied. The second sealing material 192a is applied in a pattern such as a solid shape, a dot shape, or a stripe shape. The viscosity at the time of application of the second sealing material 192a is preferably 500 mPa · s or less, more preferably 300 mPa · s or less, from the viewpoint of increasing the filling property with a thin film.

  Next, in the overlapping step, the first substrate 110 and the second substrate 120 are overlapped so that the first sealing material 191a and the second sealing material 192a are sandwiched in a reduced pressure atmosphere with a degree of vacuum of about 1 Pa. . At this time, the second substrate 120 is pressed toward the first substrate 110 with a force of about 600 N, and this state is maintained for about 200 seconds. In the superposition process, first, the first sealing material 191 a comes into contact with the second substrate 120 to seal the inside, and then the second sealing material 192 a is developed between the first substrate 110 and the second substrate 120.

  Next, when the pressure is returned to normal pressure, the state is the same as when pressurized by the atmospheric pressure, so the second sealing material 192a expands to every corner between the first substrate 110 and the second substrate 120, The filling property of the second sealing material 192a is improved. In that case, the 1st sealing material 191a functions as a bank with respect to the 2nd sealing material 192a. For this reason, the second sealing material 192a is dammed up by the first sealing material 191a even if it is in a state similar to being pressurized by the atmospheric pressure when returning from the reduced pressure state to the normal pressure. A predetermined gap is secured between the first substrate 110 and the second substrate 120 by the first sealing material 191a and the second sealing material 192a interposed therebetween. Further, a bead-like or fiber-like gap material may be added to the first sealing material 191a, and a gap may be secured between the first substrate 110 and the second substrate 120 by using these gap materials.

Next, in the curing step, ultraviolet light having a light intensity of about 2000 mJ / cm ² is irradiated with a power of about 30 mW / cm ² to the first sealing material 191a from the first substrate 110 and / or the second substrate 120 side. The first sealing material 191a is selectively cured to form the first sealing material layer 191. Next, the first substrate 110 and the second substrate 120 are heated by 60 to 100 ° C. in a state where the first substrate 110 and the second substrate 120 bonded together by the first sealing material layer 191 are arranged on a hot plate. The second sealing material 192a is cured while spreading the second sealing material 192a to every corner between the two and the second sealing material layer 192 is formed. In this manner, the first substrate 110 and the second substrate 120 are bonded to each other by the first sealing material layer 191 and the second sealing material layer 192.

  In the above embodiment, the example in which the organic functional layer 182 is formed on the entire surface of the pixel region 110a has been described. However, after the organic functional layer is selectively applied to the region surrounded by the partition wall 151 by an inkjet method or the like, the fixing is performed. Thus, the invention may be applied to an organic EL device in which an organic functional layer including a hole injection layer and a light emitting layer is formed on the first electrode layer 181. In this case, 3,4-polyethylenediosithiophene / polystyrene sulfonic acid (PEDOT / PSS) or the like is used for the hole injection layer, and a polyfluorene derivative, a polyphenylene derivative, polyvinyl carbazole, a polythiophene derivative, Alternatively, perylene dyes, coumarin dyes, rhodamine dyes such as rubrene, perylene, 1910-diphenylanthracene, tetraphenylbutadiene, nile red, coumarin 6, quinacridone and the like may be used.

  As described with reference to FIGS. 1 and 2, the organic EL device is manufactured by a plurality of processes in a state different from the air, such as a vacuum atmosphere (depressurized atmosphere) or a nitrogen atmosphere. Therefore, in this embodiment, a substrate processing apparatus is configured as shown in FIG.

  FIG. 3 is a schematic plan view showing the configuration of the substrate processing apparatus to which the present invention is applied. As shown in FIG. 3, the substrate processing apparatus 11 is an apparatus used for manufacturing an organic EL device, a liquid crystal device, a semiconductor device and the like provided with the substrate 1 to be processed, and has a plurality of cluster type processing stations 13a to 13f. is doing. In addition, the substrate processing apparatus 11 includes a substrate transfer area 14 connected to be able to communicate with a plurality of processing stations 13a to 13f. Accordingly, when an organic EL device is manufactured, each film using a CVD method, a sputtering method, a vapor deposition method, etc. in a vacuum atmosphere is applied to the element substrate 110 (see FIGS. 1 and 2) as the substrate 1 to be processed. A forming process, a patterning process using a photolithography technique, an organic film sealing process under a nitrogen atmosphere, a printing process using an inkjet technique under a nitrogen atmosphere, and the like can be performed.

  Further, in the second fixed chamber 15b of the second processing station 13b, the substrate 1 to be processed is directly transferred from the second processing station 13b to the fourth processing station 13d to one of the eight side portions 20. A direct substrate transfer chamber 32 is connected, and the direct substrate transfer chamber 32 is connected to one side 20 of the eight sides 20 of the fourth fixed chamber 15d in the fourth processing station 13d. Yes. An unload chamber 33 is continued in the fourth fixed chamber 15d. In the fixed chambers 15b and 15d, a side valve 20 connected to the direct substrate transfer chamber 32 is provided with a gate valve (not shown). By switching the gate valve from the closed state to the open state, The substrate 1 to be processed can be directly transferred from the second fixed chamber 15b to the fourth fixed chamber 15d. Therefore, depending on the contents of processing, for example, when the substrate 1 to be processed is loaded into the second fixed chamber 15b, the transfer chamber 23 is used, and the substrate 1 is unloaded from the second fixed chamber 15b to the fourth fixed chamber 15d. When doing so, the direct substrate transfer chamber 32 can be used. Therefore, the substrate 1 to be processed, which is different from the substrate 1 being transferred in the direct substrate transfer chamber 32, can be transferred to the other fixed chamber 15 by the transfer chamber 23.

  Hereinafter, the first processing station 13a among the plurality of processing stations 13a to 13f will be specifically described.

  The first processing station 13a includes a first fixed chamber 15a having an atmosphere different from the atmosphere. Around the first fixed chamber 15a, a plurality of processing chambers 16 for performing desired processing on the substrate 1 to be processed in an atmosphere different from the atmosphere are arranged. Since the substrate 1 is continuously processed in an atmosphere different from the air, the substrate 1 is transferred between the plurality of processing chambers 16 and between the plurality of processing stations 13. The other processing stations 13b to 13f have the same configuration.

Here, the 1st processing station 13a is provided with the 1st fixed chamber 15a of a vacuum atmosphere, for example, is set as a vacuum atmosphere of 10 ^<-5 > Pa. For example, the first fixed chamber 15a is formed in a regular octagonal planar shape having eight sides 20. Specifically, the side portions 20 are connected to each other with an internal angle of 135 °. As described above, since the first fixed chamber 15a has a regular octagonal planar shape, the number of the side portions 20 can be increased, and many processing chambers 16 are connected to the side portions 20. can do.

  A substrate transfer robot 17 is disposed near the center of the first fixed chamber 15a. The substrate transfer robot 17 includes an arm 18 that transfers, picks up, and places the substrate 1 to be processed. The first fixed chamber 15a and the processing chamber 16 are connected to a vacuuming device (not shown) for creating a vacuum atmosphere.

  In addition, for example, a load chamber 19 that carries the substrate 1 to be processed into the substrate processing apparatus 11 from the outside is connected to one of the eight side portions 20. The processing chamber 16 is connected to four of the eight sides 20. The four side portions 20 are provided with gate valves (not shown) that switch the side portions 20 to an open state or a closed state. Of the eight sides 20, one side 20 (substrate transfer port) on the substrate transfer area 14 side is connected to the substrate transfer area 14 via a gate valve 21 (first gate valve). ing.

  The other processing stations 13b to 13f have the same configuration as the first processing station 13a. However, in this embodiment, the first processing station 13a to the third processing station 13c perform processing on the substrate 1 in a vacuum atmosphere, and the fourth processing station 13d to the sixth processing station 13f are in an inert gas atmosphere. For example, the substrate 1 is processed in a nitrogen atmosphere. For this reason, the first processing station 13a to the third processing station 13c are configured with a pump for evacuating the fixed chambers 15a to 15c and the processing chamber 16, while the fourth processing station 13d to the sixth processing station. The station 13f includes a vacuum pump and a nitrogen gas supply device for replacing the fixed chambers 15d to 15f and the processing chamber 16 with nitrogen gas. In the sixth processing station 13f, for example, an unload chamber 22 for carrying the substrate 1 to be processed out of the substrate processing apparatus 11 is provided on one side 20 of the eight sides 20 of the first fixed chamber 15a. It is connected.

  The substrate transfer area 14 is formed in a substantially rectangular shape, and one side 20 of the eight sides 20 of the fixed chambers 15 a to 15 f is connected to both sides of the substrate transfer area 14. Here, in the substrate transfer area 14, the transfer chamber 23 for transferring the substrate 1 to be processed, the transfer base 24 for moving the transfer chamber 23, and the transfer base 24 along the long side direction of the substrate transfer area 14. A conveyance guide 25 (substrate conveyance path) is arranged as a conveyance rail for guiding. With this conveyance guide 25, the conveyance chamber 23 can be reciprocated in the long side direction. In the transfer chamber 23, a gate valve 26 (second gate valve) is attached to a substrate transfer port with the fixed chambers 15a to 15f.

  The substrate transfer area 14 is set in a high clean atmosphere so that dust and the like do not adhere to the transfer chamber 23. Thereby, the invasion of dust into the substrate transfer area 14 is suppressed, and even when the transfer chamber 23 and the fixed chambers 15a to 15f are brought into close contact with each other through the gate valves 21 and 26, the dust is prevented from being caught. Can do.

  The inside of the transfer chamber 23 is set to a vacuum atmosphere or a nitrogen atmosphere (inert gas atmosphere), and a table (not shown) on which the substrate 1 to be processed is placed is provided.

  A vacuum pump 27 (for example, a dry pump) or a nitrogen gas supply device (not shown) for making the inside of the transfer chamber 23 a vacuum atmosphere or a nitrogen atmosphere (inert gas atmosphere) is attached to the transfer base 24. ing. However, only the vacuum pump 27 for making the inside of the transfer chamber 23 a vacuum atmosphere may be attached.

  The transfer chamber 23 can be rotated about a normal line with the transfer base 24 as a fixed base. Specifically, for example, it can be rotated within a range of 180 °. More specifically, for example, it is rotated at intervals of 90 °. Thereby, the posture of the transfer chamber 23 is such that the direction in which the substrate transfer port with the fixed chambers 15a to 15f is located is directed to the side where the fixed chambers 15a to 15f are located, and the transfer guide 25 and the substrate transfer area 14 are The substrate 1 is exchanged with the processing stations 13a to 13f (fixed chambers 15a to 15f) arranged around the substrate transfer area 14 and switched between the postures facing the extending side. Can be done.

  Furthermore, the transfer chamber 23 is provided so as to be able to reciprocate in the direction (vertical direction in FIG. 3) in which the fixed chambers 15a to 15f are arranged with the transfer base 24 as a fixed base. As a result, the gate valve 26 of the transfer chamber 23 and the gate valve 21 of the first processing station 13a can be brought into close contact with each other, and the substrate 1 to be processed moves back and forth between the transfer chamber 23 and the fixed chambers 15a to 15f. Can be made.

  The conveyance guide 25 is formed in a convex shape, for example, and extends from the first processing station 13a side to the fifth processing station 13e side. In addition, a concave depression is formed in the conveyance base 24, and the convex conveyance guide 25 and the concave conveyance base 24 are arranged so as to be slidable. That is, by moving the transport base 24 with the transport guide 25 as a guide, the transport chamber 23 can be easily moved to the positions of the fixed chambers 15a to 15f.

  The positional relationship between the first fixed chamber 15a and the substrate transfer area 14 is such that the gate valve 21 of the first fixed chamber 15a and the gate valve 26 of the transfer chamber 23 can be in close contact with each other and the substrate 1 to be processed can be transferred in a vacuum atmosphere. For example, the arrangement position of the first fixed chamber 15 a may be separated from the substrate transfer area 14. In other words, it is sufficient that only the connection portion can be brought into close contact with a specified accuracy. Further, as long as the gate valves 21 and 26 satisfy the positional relationship described above, the positions of the fixed chambers 15a to 15f may be shifted from each other.

(Configuration of substrate transfer chamber 32)
FIGS. 4A and 4B are explanatory views schematically showing a planar configuration and a cross-sectional configuration of the substrate transfer chamber configured in the substrate processing apparatus to which the present invention is applied.

  In the substrate processing apparatus 11 shown in FIG. 3, as shown in FIGS. 4A and 4B, the second fixed chamber 15b of the second processing station 13b and the fourth fixed chamber 15d of the fourth processing station 13d The substrate transfer chamber 32 is connected to the upper wall 32c, the bottom wall 32d, and the side walls 32a and 32b, and is held in an atmosphere different from the atmosphere, such as a vacuum atmosphere or an inert gas atmosphere.

  In such a substrate transfer chamber 32, when transferring a substrate from the second fixed chamber 15b to the fourth fixed chamber 15d, first, in the substrate transfer chamber 32, a transfer direction (indicated by an arrow B) of the substrate 1 to be processed. A pair of rollers 54a and 54b that are spaced apart in the direction) are disposed, and a belt 53 is stretched between the pair of rollers 54a and 54b. The belt 53 is a metal belt made of stainless steel or the like, and a lay-like substrate mounting portion 51 is fixed to the upper surface of the belt 53. As the belt 53, in addition to a single plate, a laminated plate or a multi-layered metal mesh may be used. In either case, if a belt 53 is made of metal, there is an advantage that the life is long. In addition, when the characteristic equivalent to a metal thing can be acquired, you may comprise the belt 53 with another material.

  In the present embodiment, the belt 53 is an endless belt having both ends fixed to a pair of rollers 54a and 54b. In addition, the belt 53 is connected to a connecting portion 51 e that protrudes from the lower surface of the substrate mounting portion 51 at two end portions in the longitudinal direction. Further, in the substrate transfer chamber 32, a pair of left and right guide rails 52 extend in the lower position of the substrate mounting portion 51 in the transfer direction of the substrate 1 to be processed. It arrange | positions so that 51 connection part 51e may be pinched | interposed from both right and left sides. For this reason, when the downstream roller 54b rotates as indicated by the arrow A1, the belt 53 moves in the transport direction of the substrate 1 to be processed, and accordingly, the substrate mounting portion 51 also transports the substrate 1 to be processed. Move to. On the other hand, when the upstream roller 54a rotates as indicated by the arrow A2, the belt 53 moves in the direction opposite to the conveyance direction of the substrate 1 to be processed. The processing substrate 1 moves in the direction opposite to the conveyance direction. Meanwhile, the guide rail 52 controls the posture and movement path of the substrate transfer chamber 32.

  In order to perform such driving, in this embodiment, the rotating shafts 54c and 54d of the rollers 54a and 54b are pulled out to the outside of the substrate transfer chamber 32 through the side wall 32a. A predetermined seal is applied to the penetrating portions of the shafts 54c and 54d. Further, outside the substrate transfer chamber 32, drive devices 55a and 55b having motors are connected to the rotation shafts 54c and 54d, respectively.

  Here, four through holes 51 b are formed at the bottom of the substrate mounting portion 51. In addition, four through holes 32e are formed in the bottom wall 32d of the substrate transfer chamber 32 at positions where the substrate mounting portion 51 overlaps the through holes 51b with the substrate mounting portion 51 closest to the second fixed chamber 15b. Four elevating pins 57 are arranged inside the through hole 32e so as to close the through hole 32e. In addition, four through holes 32f are formed in the bottom wall 32d of the substrate transfer chamber 32 at positions where the substrate mounting portion 51 overlaps the through holes 51b in a state of being closest to the fourth fixed chamber 15d. Four elevating pins 58 are arranged inside the two through holes 32f so as to close the through holes 32f. As will be described later, the elevating pins 57 and 58 move up and down in the through holes 32e and 32f, between the substrate transfer robot 17 and the substrate mounting portion 51 in the second fixed chamber 15b, and the substrate mounting. This is used when the substrate is transferred between the unit 51 and the substrate transfer robot 17 in the fourth fixed chamber 15d.

(Basic transport operation)
Next, a basic transfer operation of the substrate processing apparatus 11 will be described with reference to FIG. In addition, the substrate processing apparatus 11 of this embodiment shall process in order from the 1st processing station 13a to the 6th processing station 13f, for example.

  First, the substrate 1 to be processed is carried into the substrate processing apparatus 11 through the load chamber 19. Next, in the first processing station 13a, a desired process is performed on the substrate 1 to be processed in a vacuum atmosphere. The substrate 1 to be processed is transferred from the load chamber 19 to the processing chamber 16 by the substrate transfer robot 17. Further, the substrate transfer robot 17 also transfers between the processing chambers 16.

  Next, the substrate 1 to be processed is transferred from the first processing station 13 a to the transfer chamber 23 in the substrate transfer area 14. First, the transfer chamber 23 is moved to a position close to the first processing station 13a. In addition, you may make it wait in the position of the 1st processing station 13a previously. Further, when the transfer chamber 23 is moved, the transfer chamber 23 is preferably rotated so that the gate valve 26 faces the longitudinal direction of the substrate transfer area 14 so that the gate valve 26 does not contact the substrate transfer area 14. . In either case, since the first processing station 13a is in a vacuum atmosphere, the inside of the transfer chamber 23 is kept in a vacuum atmosphere.

  Next, the transfer chamber 23 is rotated so that the gate valve 26 faces the first processing station 13a, and then the transfer chamber 23 is moved in the direction of the first fixed chamber 15a, so that the gate of the first fixed chamber 15a is moved. The valve 21 and the gate valve 26 of the transfer chamber 23 are brought into close contact with each other.

  Next, the gate valves 21 and 26 are changed from the closed state to the open state, and the first fixed chamber 15a and the transfer chamber 23 are communicated. Then, the substrate 1 to be processed is transferred from the first fixed chamber 15a to the transfer chamber 23 using the substrate transfer robot 17, and the substrate 1 to be processed is placed on a table (not shown). After the substrate 1 to be processed is transferred, the gate valves 21 and 26 are changed from the open state to the closed state.

  Next, the substrate 1 to be processed is transferred to the second processing station 13b. First, the transfer chamber 23 is moved to the second fixed chamber 15b side, and then the transfer chamber 23 is rotated so that the gate valve 26 faces the second processing station 13b. Then, the transfer chamber 23 is moved to the second processing station 13b side, and the gate valve 26 of the transfer chamber 23 and the gate valve 21 of the second processing station 13b are brought into close contact with each other. Here, in the second processing station 13b, in order to perform processing on the substrate 1 to be processed in a vacuum atmosphere, the inside of the transfer chamber 23 is kept in a vacuum atmosphere.

  Next, the gate valves 21 and 26 are changed from the closed state to the open state, and the second fixed chamber 15 b and the transfer chamber 23 are communicated with each other. Then, using the substrate transfer robot 17, the substrate 1 to be processed is transferred from the transfer chamber 23 to the second fixed chamber 15b, and the substrate 1 to be processed is further transferred to the processing chamber 16 of the second processing station 13b. After the substrate 1 to be processed is transferred, the gate valves 21 and 26 are changed from the open state to the closed state.

  Thereafter, the substrate 1 to be processed is transported from the second processing station 13b to the sixth processing station 13f by the same method, and the substrate 1 is processed. Then, after the processing of the sixth processing station 13f is completed, the substrate 1 to be processed is taken out from the unload chamber 22.

  Meanwhile, in the fourth processing station 13d to the sixth processing station 13f, the processing target substrate 1 is processed in a nitrogen atmosphere, so that the fixed chambers 15d to 15f and the processing chamber 16 are in a nitrogen atmosphere. For this reason, when the substrate 1 is transferred between the fixed chambers 15d to 15f of the fourth processing station 13d to the sixth processing station 13f and the transfer chamber 23, the inside of the transfer chamber 23 is evacuated. Keep the atmosphere or nitrogen atmosphere.

  According to the substrate processing apparatus 11 configured in this way, in addition to the effect of shortening the time required for starting up to a processable state, for example, various conditions are set in the development and prototyping stages, and processing is performed in various processing orders. The effect can be obtained in such a case. That is, in the substrate processing apparatus 11 of this embodiment, since the substrate transfer area 14 and each of the fixed chambers 15a to 15f are connected so as to communicate with each other, when the substrate processing apparatus 11 is started up, the transfer guide 24 (substrate transfer) The fixed chambers 15a to 15f can be simultaneously connected on the basis of the path) and the substrate transfer area 14, and the start-up time can be shortened.

  In addition, since the transfer chamber 23 moves to transfer the substrate 1 to be processed to the fixed chambers 15a to 15f, there is no need to arrange the fixed chambers 15a to 15f in the processing order. This can be dealt with by simply connecting a new fixed chamber 15 to the transfer area 14. Moreover, since it can respond even if it does not stop an operation | work other than the fixed chamber 15 to connect, it can suppress that productivity falls. Furthermore, since it is possible to change the process order by simply changing the transfer order of the transfer chamber 23, it is possible to respond without adversely affecting the other fixed chambers 15, thereby improving productivity. Can do.

  Further, when the substrate 1 is transferred between the fixed chambers 15a to 15c and the transfer chamber 23 of the first processing station 13a to the third processing station 13c in a vacuum atmosphere, the inside of the transfer chamber 23 is changed. When the substrate 1 is transferred between the fixed chambers 15d to 15f and the transfer chamber 23 of the fourth processing station 13d to the sixth processing station 13f in a vacuum atmosphere, the substrate 1 is transferred. Since the inside of the chamber 23 is set to a vacuum atmosphere or a nitrogen atmosphere, the film formed on the substrate 1 to be processed is not deteriorated and the atmosphere of the processing stations 13a to 13f is not disturbed when the substrate is transferred. .

  Further, since the substrate transfer area 14 has a high clean atmosphere, the gate valves 21 and 26 are kept clean even when the transfer chamber 23 moves or comes into close contact with the gate valve 21 of each fixed chamber 15. be able to. Therefore, it is possible to prevent impurities from entering the substrate processing apparatus 11 and the like.

(Transfer operation in the substrate transfer chamber 32)
FIG. 5 is an explanatory diagram of the substrate transfer operation performed in the substrate transfer chamber of the substrate processing apparatus to which the present invention is applied. In the substrate processing apparatus 11 of this embodiment, when the substrate 1 to be processed is directly transferred from the second processing station 13b to the fourth processing station 13d, first, as shown in FIG. It is in the position closest to the second fixed chamber 15b. In this state, when the substrate transfer robot 17 in the second fixed chamber 15 b moves the substrate 1 to be processed to a position directly above the substrate mounting portion 51, the lift pins 57 pass through the through holes 51 b of the substrate mounting portion 51 and mount the substrate. The substrate transport robot 17 retreats when it rises above the part 51 and the lift pins 57 support the substrate 1 to be processed.

  Next, as shown in FIG. 5B, when the lifting pins 57 are lowered, the substrate 1 to be processed is placed on the upper surface of the substrate mounting portion 51.

  Next, when the roller 54d is driven in the direction indicated by the arrow A1 by the driving device 55b shown in FIG. 4A, the belt 53 is wound around the roller 54d as shown in FIG. 5C. Accordingly, the substrate mounting portion 51 on which the substrate 1 to be processed is mounted also moves toward the fourth fixed chamber 15d. Then, the roller 54d stops at the position where the substrate mounting portion 51 is closest to the fourth fixed chamber 15d. At that time, the rotation speed of the roller 54d is controlled so that the substrate mounting portion 51 stops while being rapidly decelerated after the substrate mounting portion 51 has accelerated and started moving. In the meantime, the roller 54a may also be driven in the direction indicated by the arrow A1 by the driving device 55a shown in FIG. 4 (a). When synchronized in this way, load reduction or vibration in the driving device 55b is prevented. Can do.

  In this way, as shown in FIG. 5D, when the substrate mounting portion 51 stops at the position closest to the fourth fixed chamber 15d, the lift pins 57 pass through the through holes 51b of the substrate mounting portion 51. Ascending above the mounting portion 51, the substrate 1 to be processed is supported. Next, when the substrate transfer robot 17 in the fourth fixed chamber 15d holds the substrate 1 to be processed and then the lifting pins 57 are lowered, the substrate 1 to be processed is transferred to the substrate transfer robot 17 in the fixed chamber 15d. Thereafter, when the roller 54a is driven in the direction indicated by the arrow A2 by the driving device 55a shown in FIG. 4A, the belt 53 is wound around the roller 54a as shown in FIG. 5A. Thus, the second fixed chamber 15b is moved to the original position. In the meantime, the roller 54ba may also be driven in the direction indicated by the arrow A2 by the driving device 55b shown in FIG. 4A. When synchronized in this way, load reduction or vibration in the driving device 55a is prevented. Can do.

  As described above, in the substrate processing apparatus 11 of the present embodiment, the belt 53 is stretched between the pair of rollers 54 a and 54 b in the substrate transfer chamber 32, and the substrate mounting portion 51 is integrated with the belt 53. Thus, when the rollers 54 a and 54 b are rotated, the substrate mounting portion 51 also moves together with the belt 53. As described above, since the substrate mounting portion 51 is integrated with the belt 53, the substrate mounting portion 51 is not displaced even when the belt 53 is suddenly accelerated or decelerated. Can do.

  Further, in this embodiment, since at least two rollers 54a and 54b may be used to transport the substrate 1 to be processed, the number of rotating shafts 54c and 54d drawn out from the substrate transport chamber 32 to the outside is small. Accordingly, since there are few seal portions for making the substrate transfer chamber 32 airtight, it is easy to hold the substrate transfer chamber 32 in a state different from the atmosphere.

  In the present embodiment, the rollers 54a and 54b are driven by the driving devices 55a and 55b disposed outside the substrate transfer chamber 32, so that the substrate transfer chamber 32 is contaminated by foreign matter generated from the drive devices 55a and 55b. Can be prevented.

  Further, the belt 53 is an endless belt having both ends fixed to a pair of rollers 54a and 54b, and the rollers 54a and 54b can rotate in both directions to drive the belt 53 in both directions. Therefore, as compared with the case where an endless belt is used, the positional deviation between the rollers 54a and 54b and the belt 53 is less likely to occur, and there is an advantage that the positional accuracy of the substrate 1 to be processed is high.

  Furthermore, since the guide rail 52 is disposed inside the substrate transfer chamber 32, the posture and movement path of the substrate mounting portion 51 can be achieved without arranging a guide roller or the like in the middle of the extending direction of the belt 53. Can be controlled with high accuracy.

[Other embodiments]
In the above-described embodiment, the example in which the substrate 1 to be processed is transferred in one direction from the second fixed chamber 15b to the fourth fixed chamber 15d using the direct substrate transfer chamber 32 has been described. The substrate 1 to be processed may be reciprocally conveyed through the substrate conveyance chamber 32, and a configuration in which three or more chambers are directly connected by the direct substrate conveyance chamber 32 may be employed.

  In the above embodiment, the driving devices 55a and 55b are provided for the two rollers 54a and 54b, respectively, but the rollers 54a and 54b may be driven by a common driving device.

  In the above embodiment, an endless belt is used as the belt 53. However, a roller having irregularities on the roller surface is used, and an endless timing belt having irregularities that engage with the irregularities on the roller surface is used as the belt. In this case, the belt is stretched around the two rollers.

  In the above embodiment, each of the planar shapes of the fixed chambers 15a to 15f is a regular octagon. However, the present invention is not limited to this. For example, an octagon having a shape in which two opposing side portions 20 are partially extended may be used. It may be hexagonal, square or round.

  In the above-described embodiment, the example in which the processing target substrate 1 is processed in the vacuum atmosphere and the nitrogen atmosphere has been described. You may apply. In the above embodiment, an example of a nitrogen atmosphere is described as the inert atmosphere. However, as the inert gas atmosphere, a rare gas atmosphere such as argon gas or helium gas, or a mixed gas atmosphere of nitrogen gas and rare gas is used. It may be adopted.

  In the above embodiment, the example in which the substrates to be processed 1 to be processed in the substrate processing apparatus 11 are processed one by one has been described. However, a plurality of substrates to be processed 1 may be processed at the same time. In any case, when carrying the substrate 1 to be processed from the load chamber 19, it is only necessary to select whether to process only one or a plurality of substrates in consideration of productivity.

  In the above embodiment, the example in which the gate valve 21 is provided directly on one of the side portions 20 has been described. However, for example, the side portion 20 and the substrate transfer area 14 are connected via a bellows-like transfer path. May be. According to this, since the bellows-like transport path has flexibility, even if the arrangement positions of the fixed chambers 15 are deviated from the substrate transport area 14, it can be connected in an airtight manner. In addition, the substrate transfer area 14 and each fixed chamber 15 can be quickly connected.

(A), (b) is the top view which looked at the planar structure of the organic electroluminescent apparatus to which this invention was applied from the 2nd board | substrate side with each component, respectively, and its JJ 'sectional drawing. It is sectional drawing which shows typically the cross-sectional structure of the detail of the organic electroluminescent apparatus to which this invention is applied. It is explanatory drawing which shows typically the planar structure of the substrate processing apparatus to which this invention is applied. (A), (b) is explanatory drawing which shows typically the planar structure and cross-sectional structure of the substrate conveyance chamber comprised in the substrate processing apparatus to which this invention is applied, respectively. It is explanatory drawing of the board | substrate conveyance operation performed in the board | substrate conveyance chamber of the substrate processing apparatus to which this invention is applied. It is explanatory drawing which shows typically the plane structure and cross-sectional structure of the substrate conveyance chamber comprised in the substrate processing apparatus which concerns on a comparative example.

Explanation of symbols

1 ... substrate to be processed, 11 ... substrate processing apparatus, 13a-13f ... processing station, 32 ... substrate transfer chamber, 15a-15f ... fixed chamber, 16 ... processing chamber, 17 ... substrate transfer robot, 18 .. Arm, 23 .. Transfer chamber, 33 .. Unload chamber, 51 .. Substrate mounting part, 52 .. Guide rail, 53 .. Belt, 54 a, 54 b .. Roller, 54 c, 54 d. 55a, 55b ... Driving device 57, 58 ... Lifting pin, 100 ... Organic EL device

Claims (8)

In a substrate processing apparatus comprising a plurality of chambers maintained in an atmosphere different from the atmosphere, and one or more substrate transfer chambers connecting the plurality of chambers,
Inside the substrate transfer chamber, a pair of rollers that are separated in the transfer direction of the substrate to be processed, a belt that is stretched between the pair of rollers and moves in the transfer direction of the substrate to be processed, and the belt And a substrate mounting portion that is pulled by the belt.   The substrate processing apparatus according to claim 1, wherein the substrate transfer chamber is held in an atmosphere different from air.   The substrate processing apparatus according to claim 1, wherein the roller is driven by a driving device disposed outside the substrate transfer chamber. The belt is an endless belt having both ends fixed to the pair of rollers,
The substrate processing apparatus according to claim 1, wherein the roller is capable of rotating in both directions to drive the belt in both directions.   The substrate processing apparatus according to claim 1, wherein the belt is made of metal.   6. The substrate processing apparatus according to claim 1, wherein a guide for defining a posture and a movement path of the substrate mounting portion is disposed inside the substrate transfer chamber.   The substrate processing apparatus according to claim 1, wherein the guide extends in a rail shape. An organic electroluminescence apparatus that sequentially performs a plurality of processes on a substrate in a substrate processing apparatus including a plurality of chambers held in an atmosphere different from the atmosphere and one to a plurality of substrate transfer chambers connecting the plurality of chambers. In the manufacturing method,
A pair of rollers spaced apart in the transport direction of the substrate to be processed, and a belt stretched between the pair of rollers and moving in the transport direction of the substrate to be processed; , And a substrate mounting portion that is configured integrally with the belt and pulled by the belt,
A method of manufacturing an organic electroluminescence device, wherein the substrate is transferred in the substrate transfer chamber in a state where the substrate to be processed is mounted on the substrate mounting portion by moving the belt.

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