JP2009298006A - Electromagnetic wave permeable glittering resin product and manufacturing method - Google Patents
Electromagnetic wave permeable glittering resin product and manufacturing method Download PDFInfo
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- JP2009298006A JP2009298006A JP2008154707A JP2008154707A JP2009298006A JP 2009298006 A JP2009298006 A JP 2009298006A JP 2008154707 A JP2008154707 A JP 2008154707A JP 2008154707 A JP2008154707 A JP 2008154707A JP 2009298006 A JP2009298006 A JP 2009298006A
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- 229920005989 resin Polymers 0.000 title claims abstract description 45
- 239000011347 resin Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000004544 sputter deposition Methods 0.000 claims abstract description 18
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000001464 adherent effect Effects 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 22
- 239000011651 chromium Substances 0.000 claims description 18
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 13
- 229910052804 chromium Inorganic materials 0.000 claims description 13
- 238000007747 plating Methods 0.000 claims description 6
- 230000035699 permeability Effects 0.000 abstract description 3
- 238000005424 photoluminescence Methods 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000001000 micrograph Methods 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 229920000515 polycarbonate Polymers 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000012811 non-conductive material Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 2
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 2
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000002932 luster Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
Abstract
Description
本発明は、樹脂基材上に金属膜を含む電磁波透過性光輝樹脂製品及びこの電磁波透過性光輝樹脂製品の製造方法に関するものである。 The present invention relates to an electromagnetic wave transmissive bright resin product including a metal film on a resin substrate and a method for producing the electromagnetic wave transmissive bright resin product.
今日、自動車はその安全性を向上させるため、自動車が周囲の物に接近したことを運転者に警告する距離測定用のレーダー装置を自動車の各部、例えばラジエータグリル、バックパネル等の背後に設けることがある。このようなレーダー装置は、電磁波を対象物に照射して距離を測定していることから、レーダー装置と対象物との間に電磁波を遮断するもの（例えば金属等）があると、その機能を果たせなくなる。従って、レーダー装置の前面に位置するラジエータグリル等（レーダー装置のカバー部）の自動車の外装用樹脂製品についても電磁波透過性が必要となっている。 Today, to improve the safety of automobiles, distance measuring radar devices are installed behind each part of the automobile, such as radiator grills and back panels, to warn the driver that the automobile has approached nearby objects. There is. Since such a radar device measures the distance by irradiating the object with electromagnetic waves, if there is something (such as metal) that blocks the electromagnetic waves between the radar device and the object, its function is Can't be done. Accordingly, electromagnetic wave permeability is also required for resin products for exteriors of automobiles such as a radiator grill or the like (a cover part of a radar device) located in front of the radar device.
一方、樹脂からなるラジエータグリル等は、意匠性の観点から、表面にメッキを施して光輝性（金属光沢）を持たせることがある。 On the other hand, a radiator grill or the like made of resin is sometimes given luster (metallic luster) by plating the surface from the viewpoint of design.
そのため、特許文献１記載のように、電磁波透過性を有する光輝性メッキとして、不連続構造（海島構造）の膜を形成できるインジウム（Ｉｎ）膜が提案されている。 Therefore, as described in Patent Document 1, an indium (In) film capable of forming a film having a discontinuous structure (sea island structure) has been proposed as a bright plating having electromagnetic wave permeability.
しかし、インジウムは、今日、価格が高騰していることから、他の金属（特に安価な金属）での代替が必要になっている。
今回、非導電性物質からなる不連続構造膜上に金属膜を成膜することにより、金属膜の表面抵抗が大きくなることを見出した。 It has now been found that the surface resistance of a metal film is increased by forming a metal film on a discontinuous structure film made of a non-conductive material.
そこで、本発明は、非導電性物質の複数の付着体からなる不連続構造膜上に成膜された金属膜を含むことで光輝性を有しながら電磁波透過性も有する電磁波透過性光輝樹脂製品及びこの電磁波透過性光輝樹脂製品の製造方法を提供する。 Accordingly, the present invention provides an electromagnetic wave transmitting glitter resin product having an electromagnetic wave transmission property while having a glitter property by including a metal film formed on a discontinuous structure film composed of a plurality of adherents of non-conductive substances. And a method for producing the electromagnetic wave transmitting bright resin product.
（Ａ）電磁波透過性光輝樹脂製品
本発明の電磁波透過性光輝樹脂製品は、樹脂基材と、前記樹脂基材上に非導電性物質の複数の付着体からなる不連続構造の下地膜と、前記下地膜上に成膜した金属膜とを含み、前記付着体は、端部間の長さが１０００ｎｍ以下であり、前記金属膜は、膜厚が前記下地膜の膜厚より薄く且つ前記付着体の基部に付着した部位の膜厚が他部位の膜厚より薄いことを特徴としている。
(A) Electromagnetic wave transmitting bright resin product The electromagnetic wave transmitting bright resin product of the present invention includes a resin base material, and a base film having a discontinuous structure comprising a plurality of non-conductive substance adhering materials on the resin base material, A metal film formed on the base film, and the attached body has a length between end portions of 1000 nm or less, and the metal film has a film thickness smaller than the film thickness of the base film and the attached film. It is characterized in that the thickness of the part attached to the base of the body is thinner than the thickness of the other part.
（Ｂ）電磁波透過性光輝樹脂製品の製造方法
本発明の電磁波透過性光輝樹脂製品の製造方法は、樹脂基材上に非導電性物質の複数の付着体からなる不連続構造の下地膜をスパッタリングにより成膜し、前記下地膜上に膜厚が前記下地膜の膜厚より薄く且つ前記付着体の基部に付着した部位の膜厚が他部位の膜厚より薄くなるよう金属膜を乾式メッキにより成膜することを特徴としている。
(B) Manufacturing method of electromagnetic wave transmitting glitter resin product The manufacturing method of the electromagnetic wave transmitting bright resin product of the present invention is to sputter a base film having a discontinuous structure composed of a plurality of adherents of non-conductive substances on a resin substrate. The metal film is formed on the base film by dry plating so that the film thickness is smaller than the film thickness of the base film and the film thickness of the part attached to the base of the adherend is thinner than the film thickness of other parts. It is characterized by film formation.
本発明における各要素の態様を以下に例示する。 The aspect of each element in the present invention is exemplified below.
１．樹脂基材
樹脂基材の形態としては、特に限定はされないが、板材、シート材、フィルム材等が例示できる。
樹脂基材の樹脂としては、上に成膜される金属膜の光輝性を活かすため、透明であること以外は、特に限定はされないが、熱可塑性樹脂が好ましく、ポリカーボネート（ＰＣ）、アクリル樹脂、ポリスチレン（ＰＳ）、ポリ塩化ビニル（ＰＶＣ）、ポリエチレンテレフタレート（ＰＥＴ）、アクリロニトリル−ブタジエン−スチレン共重合体（ＡＢＳ）、ポリウレタン等が例示できる。なお、透明は、無色透明だけでなく、有色透明であってもよい。
1. Resin base material The form of the resin base material is not particularly limited, and examples thereof include a plate material, a sheet material, and a film material.
The resin of the resin base is not particularly limited except that it is transparent in order to make use of the glitter of the metal film formed thereon, but is preferably a thermoplastic resin, such as polycarbonate (PC), acrylic resin, Examples thereof include polystyrene (PS), polyvinyl chloride (PVC), polyethylene terephthalate (PET), acrylonitrile-butadiene-styrene copolymer (ABS), and polyurethane. In addition, the transparency may be not only colorless and transparent but also colored and transparent.
２．下地膜
下地膜の膜厚としては、特に限定はされないが、５０〜３００ｎｍであることが好ましい。
2. Base film The thickness of the base film is not particularly limited, but is preferably 50 to 300 nm.
３．非導電性物質
非導電性物質としては、特に限定はされないが、電気抵抗が１０７Ω・ｃｍ以上のものであることが好ましい。具体的には、酸化ケイ素（ＳｉＯｘ）、酸化チタン（ＴｉＯｘ）等が例示できる。
3. Non-conductive material The non-conductive material is not particularly limited, but preferably has an electric resistance of 10 7 Ω · cm or more. Specific examples include silicon oxide (SiOx) and titanium oxide (TiOx).
４．スパッタリング
下地膜を成膜するためのスパッタリングの条件としては、特に限定はされないが、金属（Ｓｉ、Ｔｉ等）をターゲットに用い、成膜時の雰囲気中に酸素を導入して金属酸化物（ＳｉＯｘ、ＴｉＯｘ等）を成膜することが好ましい。
また、酸素（Ｏ２）の導入量（流量）としては、特に限定はされないが、アルゴン（Ａｒ）の流量との比（Ａｒ／Ｏ２）が４／６〜６／４となることが好ましい。
また、成膜時の圧力としては、特に限定はされないが、２〜４Ｐａであることが好ましい。
また、成膜速度としては、特に限定はされないが、０．００５〜０．１ｎｍ／秒であることが好ましい。
また、基材の配置の仕方としては、特に限定はされないが、ターゲットからのスパッタ飛来粒子の飛来方向と直交する面（以下、「直交面」という場合がある）に対し、図２ａのように平行に基材を配置するよりも、図２ｂのように斜めに基材を配置する方が好ましい。これは、基材を図２ａのように配置すると、図３ａのように付着体が基材表面の水平方向及び垂直方向に成長してしまうが、基材を図２ｂのように配置すると、いわゆる「斜め堆積」となり、図３ｂのように付着体が基材表面の傾斜方向に成長するからである。なお、本明細書において、直交面と基材とのなす角を基材傾斜角度という（図２ｂ）。
また、図３ｃのように、付着体を基材の垂直方向に成長させた下地膜上に、金属膜をスパッタリングで成膜する場合において、金属膜を「斜め堆積」により成膜してもよい。
4). Sputtering conditions for forming the underlying film are not particularly limited, but metal (Si, Ti, etc.) is used as a target, and oxygen is introduced into the atmosphere during film formation to form a metal oxide (SiOx). , TiOx, etc.) are preferably formed.
The amount of oxygen (O 2 ) introduced (flow rate) is not particularly limited, but the ratio (Ar / O 2 ) to the flow rate of argon (Ar) is preferably 4/6 to 6/4. .
Further, the pressure at the time of film formation is not particularly limited, but is preferably 2 to 4 Pa.
The film formation rate is not particularly limited, but is preferably 0.005 to 0.1 nm / second.
Further, the arrangement of the base material is not particularly limited, but the surface orthogonal to the flying direction of the sputtered flying particles from the target (hereinafter sometimes referred to as “orthogonal surface”) as shown in FIG. Rather than arranging the substrates in parallel, it is preferable to arrange the substrates obliquely as shown in FIG. 2b. When the substrate is arranged as shown in FIG. 2a, the adherent grows in the horizontal direction and the vertical direction of the substrate surface as shown in FIG. 3a, but when the substrate is arranged as shown in FIG. This is because “oblique deposition” occurs and the adherent grows in the direction of inclination of the substrate surface as shown in FIG. In the present specification, an angle formed by the orthogonal plane and the base material is referred to as a base material tilt angle (FIG. 2b).
Further, as shown in FIG. 3c, when a metal film is formed by sputtering on a base film in which an adherent is grown in the vertical direction of the substrate, the metal film may be formed by “oblique deposition”. .
５．付着体
付着体の大きさとしては、特に限定はされないが、端部間の最長長さ（図１の符号１６）が３０〜１０００ｎｍであることが好ましい。また、付着体の基部とは、付着体の樹脂基材側の部位である。
5. Adherent The size of the adhering body is not particularly limited, but the longest length between the end portions (reference numeral 16 in FIG. 1) is preferably 30 to 1000 nm. Moreover, the base part of an adhesion body is the site | part by the side of the resin base material of an adhesion body.
６．金属膜
金属膜としては、特に限定はされないが、純金属（単体の金属）からなる膜であってもよいし、合金からなる膜であってもよい。具体的には、アルミニウム（Ａｌ）膜、クロム（Ｃｒ）膜、銀（Ａｇ）膜、ニッケル（Ｎｉ）膜等が例示できる。
金属膜の膜厚としては、特に限定はされないが、１５〜１００ｎｍであることが好ましい。
6). Metal film Although it does not specifically limit as a metal film, the film | membrane consisting of a pure metal (single metal) may be sufficient, and the film | membrane consisting of an alloy may be sufficient. Specific examples include an aluminum (Al) film, a chromium (Cr) film, a silver (Ag) film, and a nickel (Ni) film.
Although it does not specifically limit as a film thickness of a metal film, It is preferable that it is 15-100 nm.
７．乾式メッキ
乾式メッキとしては、特に限定はされないが、物理蒸着（ＰＶＤ）が好ましい。物理蒸着としては、特に限定はされないが、真空蒸着、スパッタリング、イオンプレーティング等が例示できる。
7). Dry plating The dry plating is not particularly limited, but physical vapor deposition (PVD) is preferable. Although it does not specifically limit as physical vapor deposition, Vacuum deposition, sputtering, ion plating, etc. can be illustrated.
８．電磁波透過性光輝樹脂製品
電磁波透過性光輝樹脂製品の用途としては、特に限定はされないが、ミリ波レーダー装着用のカバーや通信機器の筐体等のように、光輝性を有しつつ電磁波透過性も有することが好まれるものが例示できる。
8). Electromagnetic wave-transmitting bright resin products Applications of electromagnetic wave-transmitting bright resin products are not particularly limited, but have electromagnetic wave transmission properties while having glitter, such as covers for millimeter wave radar mounting and communication equipment housings. Examples of those that are also preferred to be included.
本発明によれば、非導電性物質の複数の付着体からなる不連続構造膜上に成膜された金属膜を含むことで光輝性を有しながら電磁波透過性も有する電磁波透過性光輝樹脂製品及びこの電磁波透過性光輝樹脂製品の製造方法を提供することができる。 According to the present invention, an electromagnetic wave-transmitting bright resin product that has an electromagnetic wave transmission property while having a bright property by including a metal film formed on a discontinuous structure film made of a plurality of adherents of a non-conductive substance. And the manufacturing method of this electromagnetic wave transmission glitter resin product can be provided.
樹脂基材と、樹脂基材上にスパッタリングにより形成された酸化ケイ素の複数の付着体からなる不連続構造の下地膜と、下地膜上にスパッタリングにより成膜されたアルミニウム膜又はクロム膜とを含み、
アルミニウム膜又はクロム膜は、膜厚が下地膜の膜厚より薄く且つ付着体の基部に付着した部位の膜厚が他部位の膜厚より薄いことを特徴とする電磁波透過性光輝樹脂製品。
A resin base material, a base film having a discontinuous structure made of a plurality of adherents of silicon oxide formed by sputtering on the resin base material, and an aluminum film or a chromium film formed by sputtering on the base film ,
The electromagnetic wave transmitting bright resin product, wherein the aluminum film or the chromium film has a film thickness smaller than that of the base film, and a film thickness of a portion adhering to the base portion of the adherend is thinner than that of other portions.
図１に示すように、本発明の電磁波透過性光輝樹脂製品１０は、樹脂基材１１と、樹脂基材１１上にスパッタリングで形成された酸化ケイ素の複数の付着体１４からなる不連続構造の下地膜１３と、下地膜１３上にスパッタリングにより成膜されたアルミニウム膜又はクロム膜の金属膜１２とを含んでいる。金属膜１２は膜厚が下地膜１３の膜厚より薄く且つ付着体１４の基部１５に付着した部位の膜厚が他部位の膜厚より薄くなっている。 As shown in FIG. 1, the electromagnetic wave transmissive bright resin product 10 of the present invention has a discontinuous structure comprising a resin base material 11 and a plurality of silicon oxide adhering bodies 14 formed on the resin base material 11 by sputtering. The base film 13 and an aluminum film or a chromium film metal film 12 formed on the base film 13 by sputtering are included. The thickness of the metal film 12 is thinner than that of the base film 13, and the thickness of the portion attached to the base 15 of the adherend 14 is thinner than the thickness of other portions.
また、樹脂基材上に形成した酸化ケイ素（ＳｉＯｘ）の不連続構造膜の表面の顕微鏡写真と、酸化ケイ素の不連続構造膜上に成膜したアルミニウム（Ａｌ）膜又はクロム（Ｃｒ）膜の表面の顕微鏡写真を、それぞれ、図４（酸化ケイ素の不連続膜構造膜）、図５（アルミニウム膜）及び図６（クロム膜）に示す。
各膜は、スパッタリングの装置として芝浦メカトロニクス社の商品名「ｉ−ｍｉｌｌｅｒＩＩ」を用い（後に述べる、実施例及び比較例にも使用）、次の表１に示す条件で成膜した。到達真空度の値は、指数表示であり、例えば５．００Ｅ−０３は、Ｅが１０を表し、−０３が１０の累乗を表していることから、５．００×１０−３、すなわち、０．００５である。
Also, a micrograph of the surface of the discontinuous structure film of silicon oxide (SiOx) formed on the resin base material and an aluminum (Al) film or a chromium (Cr) film formed on the discontinuous structure film of silicon oxide The micrographs of the surface are shown in FIG. 4 (discontinuous film structure film of silicon oxide), FIG. 5 (aluminum film) and FIG. 6 (chromium film), respectively.
Each film was formed under the conditions shown in the following Table 1 using a trade name “i-miller II” of Shibaura Mechatronics Co., Ltd. as a sputtering apparatus (also used in Examples and Comparative Examples described later). The value of the ultimate vacuum is represented by an exponent. For example, 5.00E-03 represents 5.00 × 10 −3 , that is, 0 because E represents 10 and −03 represents a power of 10. .005.
厚さ３ｍｍの板状のポリカーボネート（ＰＣ）基材上に酸化ケイ素（ＳｉＯｘ）からなる不連続構造の下地膜をスパッタリングで成膜し、その上に膜厚が２０ｎｍ、３０ｎｍ若しくは４０ｎｍのクロム（Ｃｒ）膜をスパッタリングで成膜した３種類の実施例と、実施例に対し、不連続構造の下地膜を含まない３種類の比較例のミリ波透過減衰量、透過率、反射率及び表面抵抗を表２に示す。表面抵抗の値は、指数表示であり、例えば２．４６Ｅ＋０３は、Ｅが１０を表し、＋０３が１０の累乗を表していることから、２．４６×１０３、すなわち、２４６０である。
また、これらの表面抵抗とミリ波透過減衰量との関係のグラフを図７に示す。
また、各膜の成膜条件を表３に示す。
A base film having a discontinuous structure made of silicon oxide (SiOx) is formed on a plate-like polycarbonate (PC) substrate having a thickness of 3 mm by sputtering, and chromium (Cr) having a film thickness of 20 nm, 30 nm or 40 nm is formed thereon. 3) Millimeter wave transmission attenuation, transmittance, reflectance, and surface resistance of three types of examples in which films are formed by sputtering and three types of comparative examples that do not include a base film having a discontinuous structure. It shows in Table 2. The value of the surface resistance is represented by an index. For example, 2.46E + 03 is 2.46 × 10 3 , that is, 2460 because E represents 10 and +03 represents a power of 10.
FIG. 7 is a graph showing the relationship between the surface resistance and millimeter wave transmission attenuation.
Table 3 shows the film formation conditions of each film.
各試料（後に述べる、実施例及び比較例を含む）のミリ波透過減衰量、透過率、反射率及び表面抵抗を次のようにして測定した。 The millimeter wave transmission attenuation, transmittance, reflectance, and surface resistance of each sample (including examples and comparative examples described later) were measured as follows.
（１）ミリ波透過減衰量
ミリ波透過減衰量は、電磁波吸収測定装置（自由空間法、財団法人ファインセラミックスセンター所有）を用いて測定した。
具体的には、室温において、Ｗバンド（７６．５７５ＧＨｚ）の電磁波を発信器から入射角０°にて試料に入射させ、試料をはさんで発信器と対峙する受信器で試料を透過した電磁波を受信して、ミリ波透過減衰量を測定した。
(1) Millimeter-wave transmission attenuation The millimeter-wave transmission attenuation was measured using an electromagnetic wave absorption measuring device (free space method, owned by the Fine Ceramics Center).
Specifically, at room temperature, W-band (76.575 GHz) electromagnetic waves are incident on the sample at an incident angle of 0 ° from the transmitter, and the electromagnetic waves are transmitted through the sample by a receiver facing the transmitter across the sample. The millimeter wave transmission attenuation was measured.
（２）透過率
分光光度計（島津製作所社の商品名「ＵＶ−１６５０ＰＣ」）を用い、５５０ｎｍの測定波長における透過率を測定した。
基準として、基材単体（クロム膜等を含まない）の透過率を１００％とした。
(2) Transmittance Using a spectrophotometer (trade name “UV-1650PC” manufactured by Shimadzu Corporation), the transmittance at a measurement wavelength of 550 nm was measured.
As a reference, the transmittance of a single substrate (not including a chromium film or the like) was set to 100%.
（３）反射率
分光光度計（島津製作所社の商品名「ＵＶ−１６５０ＰＣ」）を用い、５５０ｎｍの測定波長における反射率を測定した。
基準として、アルミニウ蒸着のミラーの反射率を１００％とした。
(3) Reflectance Using a spectrophotometer (trade name “UV-1650PC” manufactured by Shimadzu Corporation), the reflectance at a measurement wavelength of 550 nm was measured.
As a reference, the reflectance of the aluminum vapor deposition mirror was set to 100%.
（４）表面抵抗
表面抵抗が１．０×１０４（１．０Ｅ＋０．４）Ω／□以下の場合については、ＪＩＳ−Ｋ７１９４に準拠し、４端子４深針法により表面抵抗を測定した。
表面抵抗が１．０×１０４（１．０Ｅ＋０．４）Ω／□以上の場合については、ＪＩＳ−Ｋ６９１１に準拠し、２重リングプローブ法により表面抵抗を測定した。
(4) Surface resistance When the surface resistance was 1.0 × 10 4 (1.0E + 0.4) Ω / □ or less, the surface resistance was measured by the 4-terminal 4-deep needle method in accordance with JIS-K7194.
When the surface resistance was 1.0 × 10 4 (1.0E + 0.4) Ω / □ or more, the surface resistance was measured by a double ring probe method in accordance with JIS-K6911.
以上の結果より、実施例は比較例より表面抵抗が大きくなり且つミリ波透過減衰量が小さくなった。
また、酸化ケイ素の付着体の基部付近に付着しているクロム膜の膜厚がより薄くなることから、クロム膜の成膜時間が短い、即ち、膜厚が薄いものほど表面抵抗が大きくなった。
From the above results, the example has a higher surface resistance and a smaller millimeter-wave transmission attenuation than the comparative example.
Moreover, since the film thickness of the chromium film adhering to the vicinity of the base of the silicon oxide adhering material becomes thinner, the film resistance time of the chromium film is shorter, that is, the thinner the film thickness, the higher the surface resistance. .
次に、厚さ３ｍｍの板状のポリカーボネート（ＰＣ）基材上に膜厚が７５ｎｍ若しくは１３５ｎｍの酸化ケイ素（ＳｉＯｘ）からなる不連続構造の下地膜をスパッタリングで成膜し、その上に膜厚が２０ｎｍ若しくは３０ｎｍのクロム（Ｃｒ）膜又は膜厚が１１ｎｍ、１５ｎｍ若しくは２３ｎｍのアルミニウム（Ａｌ）膜をスパッタリングで成膜した８種類の実施例と、実施例に対し不連続構造の下地膜を含まない５種類の比較例のミリ波透過減衰量、透過率、反射率及び表面抵抗を表４に示す。
また、各膜の成膜条件を表５に示す。
Next, a base film having a discontinuous structure made of silicon oxide (SiOx) having a film thickness of 75 nm or 135 nm is formed on a plate-like polycarbonate (PC) substrate having a thickness of 3 mm by sputtering, and the film thickness is formed thereon. Includes 8 types of examples in which a chromium (Cr) film having a thickness of 20 nm or 30 nm or an aluminum (Al) film having a film thickness of 11 nm, 15 nm, or 23 nm is formed by sputtering, and a base film having a discontinuous structure with respect to the examples. Table 4 shows the millimeter wave transmission attenuation, transmittance, reflectance, and surface resistance of the five types of comparative examples.
Table 5 shows the film forming conditions of each film.
以上の結果より、実施例は同じ金属膜（膜種及び膜厚が同じ）の比較例より表面抵抗が大きくなり且つミリ波透過減衰量が小さくなった。また、下地膜の膜厚が厚い実施例は薄い実施例より若干ではあるが表面抵抗が大きくなり且つミリ波透過減衰量が小さくなった。 From the above results, the example has a higher surface resistance and a smaller millimeter-wave transmission attenuation than the comparative example of the same metal film (film type and film thickness are the same). In addition, the example in which the film thickness of the base film was thick was slightly larger than that in the thin example, but the surface resistance increased and the millimeter wave transmission attenuation decreased.
次に、厚さ３ｍｍの板状のポリカーボネート基材上に、膜厚（１５ｎｍ、３０ｎｍ、４５ｎｍ、６０ｎｍ、７５ｎｍ若しくは９０ｎｍ）及び成膜時の基材傾斜角度（０°若しくは７０°）を変えて酸化ケイ素（ＳｉＯｘ）からなる不連続構造の下地膜をスパッタリングで成膜し、その上に膜厚２３ｎｍのアルミニウム（Ａｌ）膜をスパッタリングで成膜した１２種類の実施例の表面抵抗、透過率及び反射率を表６に示す。
また、図３ａに実施例１８〜２３の、図３ｂに実施例１２〜１７の膜状態の模式図を示す。
また、酸化ケイ素の膜厚と表面抵抗との関係のグラフを図８に示す。
また、各実施例の下地膜の成膜条件を表７に示す。なお、アルミニウム膜の成膜条件は、上記膜厚が２３ｎｍの場合の条件と同じである。
Next, the film thickness (15 nm, 30 nm, 45 nm, 60 nm, 75 nm, or 90 nm) and the substrate tilt angle (0 ° or 70 °) during film formation are changed on a plate-like polycarbonate substrate having a thickness of 3 mm. Surface resistance, transmittance, and 12 types of examples in which a base film having a discontinuous structure made of silicon oxide (SiOx) was formed by sputtering, and an aluminum (Al) film having a film thickness of 23 nm was formed thereon by sputtering. The reflectivity is shown in Table 6.
Moreover, the schematic diagram of the film | membrane state of Examples 18-23 is shown to FIG. 3a, and FIG.
Moreover, the graph of the relationship between the film thickness of silicon oxide and surface resistance is shown in FIG.
Table 7 shows the film formation conditions of the base film in each example. The film formation conditions for the aluminum film are the same as those for the film thickness of 23 nm.
以上の結果より、不連続構造の下地膜の成膜時に、ターゲットからのスパッタ飛来粒子の飛来方向と直交する面に対し、７０°傾けて（基材傾斜角度：７０°）基材を配置したものの方が、直交する面に対し平行（基材傾斜角度：０°）に基材を配置したものより、同じ膜厚の下地膜において表面抵抗が大きくなった（図８）。 Based on the above results, the substrate was disposed at a tilt of 70 ° (substrate tilt angle: 70 °) with respect to the plane orthogonal to the flying direction of the sputtered flying particles from the target during the formation of the discontinuous base film. The surface resistance of the substrate was larger in the base film having the same film thickness than that in which the substrate was arranged parallel to the orthogonal plane (substrate inclination angle: 0 °) (FIG. 8).
なお、本発明は前記実施例に限定されるものではなく、発明の趣旨から逸脱しない範囲で適宜変更して具体化することもできる。 In addition, this invention is not limited to the said Example, In the range which does not deviate from the meaning of invention, it can change suitably and can be actualized.
１０ 電磁波透過性光輝樹脂製品
１１ 基材
１２ 金属膜
１３ 下地膜
１４ 付着体
１５ 基部
DESCRIPTION OF SYMBOLS 10 Electromagnetic wave transmissible bright resin product 11 Base material 12 Metal film 13 Base film 14 Adhesive body 15 Base
Claims (6)
前記付着体は、端部間の長さが１０００ｎｍ以下であり、
前記金属膜は、膜厚が前記下地膜の膜厚より薄く且つ前記付着体の基部に付着した部位の膜厚が他部位の膜厚より薄いことを特徴とする電磁波透過性光輝樹脂製品。 A resin base material, a base film having a discontinuous structure composed of a plurality of adherents of a non-conductive substance on the resin base material, and a metal film formed on the base film,
The attached body has a length between end portions of 1000 nm or less,
The metal film has a film thickness smaller than the film thickness of the base film, and a film thickness of a part attached to the base of the adherend is thinner than a film thickness of another part.
前記下地膜上に膜厚が前記下地膜の膜厚より薄く且つ前記付着体の基部に付着した部位の膜厚が他部位の膜厚より薄くなるよう金属膜を乾式メッキにより成膜することを特徴とする電磁波透過性光輝樹脂製品の製造方法。 A base film having a discontinuous structure composed of a plurality of non-conductive substance deposits is formed on a resin substrate by sputtering,
A metal film is formed on the base film by dry plating so that the film thickness is thinner than the film thickness of the base film and the film thickness of the part attached to the base of the adherend is thinner than the film thickness of other parts. A method for producing an electromagnetic wave-transmitting bright resin product.
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