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JP2009272475A - Semiconductor device - Google Patents

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Publication number
JP2009272475A
JP2009272475A JP2008122193A JP2008122193A JP2009272475A JP 2009272475 A JP2009272475 A JP 2009272475A JP 2008122193 A JP2008122193 A JP 2008122193A JP 2008122193 A JP2008122193 A JP 2008122193A JP 2009272475 A JP2009272475 A JP 2009272475A
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semiconductor chip
heat sink
recess
adhesive
semiconductor device
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Japanese (ja)
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Katsuto Takeuchi
克仁 竹内
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Denso Corp
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Denso Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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Abstract

【課題】半導体チップを放熱板に接着する半導体装置において、半導体チップから放熱板への熱伝導性を向上させる。
【解決手段】放熱板３に碁盤の目のような溝６ａからなる凹部６を形成し、この凹部６にだけ接着剤を入れる。そして、放熱板３に半導体チップを搭載すると、半導体チップが放熱板３に接着される。接着剤が入れられた凹部６以外は、半導体チップと放熱板３とは直接接触するので、半導体チップから放熱板への熱伝導性に優れたものとなる。
【選択図】図１In a semiconductor device in which a semiconductor chip is bonded to a heat sink, the thermal conductivity from the semiconductor chip to the heat sink is improved.
A recess 6 is formed in the heat radiating plate 3 with a groove 6 a like a grid, and an adhesive is put only in the recess 6. When a semiconductor chip is mounted on the heat sink 3, the semiconductor chip is bonded to the heat sink 3. Since the semiconductor chip and the heat radiating plate 3 are in direct contact except for the recess 6 in which the adhesive is put, the heat conductivity from the semiconductor chip to the heat radiating plate is excellent.
[Selection] Figure 1

Description

本発明は、ヒートシンクと称される放熱板に半導体チップを接着する構成の半導体装置に関する。   The present invention relates to a semiconductor device having a structure in which a semiconductor chip is bonded to a heat sink called a heat sink.

例えば、樹脂封止型の半導体装置は、半導体チップをリードフレームのアイランドに搭載し、半導体チップのボンディングパッドとリードフレームのリードとをボンディングワイヤで接続した後、成形型にて半導体チップを樹脂封止し、その後、リードフレームの余分な部分を切断して製造される。
半導体チップを搭載するアイランドは、半導体チップを封止した樹脂の表面に露出し、半導体チップが発生する熱を外部に放出する放熱板として機能する。この場合、半導体チップからアイランドへの熱伝導が良好に行われるようにするために、半導体チップをＡｇペーストを用いてアイランドに接着するようにしている。特許文献１では、放熱板の半導体チップ搭載面に複数の凹部を形成し、放熱板の搭載面に塗布した接着剤が凹部内にも入り込むようにして、接着剤と放熱板との接触面積を増加させ、これにより、半導体チップから放熱板への熱伝導性が更に高まるようにしている。
特開平１０−２９４４０３号公報 For example, in a resin-sealed semiconductor device, a semiconductor chip is mounted on an island of a lead frame, a bonding pad of the semiconductor chip and a lead of the lead frame are connected by a bonding wire, and then the semiconductor chip is sealed with a molding die. After that, the excess part of the lead frame is cut and manufactured.
The island on which the semiconductor chip is mounted is exposed on the surface of the resin sealing the semiconductor chip and functions as a heat radiating plate that releases heat generated by the semiconductor chip to the outside. In this case, in order to conduct heat conduction from the semiconductor chip to the island satisfactorily, the semiconductor chip is bonded to the island using Ag paste. In Patent Document 1, a plurality of recesses are formed on the semiconductor chip mounting surface of the heat sink, and the adhesive applied to the heat sink mounting surface also enters the recess so that the contact area between the adhesive and the heat sink is increased. This increases the thermal conductivity from the semiconductor chip to the heat sink.
JP-A-10-294403

しかしながら、熱伝導率の高いＡｇを混入させたＡｇペーストを接着剤として用いても、そのＡｇペーストには樹脂が含まれている。このため、Ａｇペーストと放熱板との接触面積を増加させたとしても、半導体チップと放熱板との間にＡｇペーストが介在する限り、放熱性の向上には限度がある。   However, even if an Ag paste mixed with Ag having a high thermal conductivity is used as an adhesive, the Ag paste contains a resin. For this reason, even if the contact area between the Ag paste and the heat sink is increased, there is a limit to the improvement in heat dissipation as long as the Ag paste is interposed between the semiconductor chip and the heat sink.

本発明は上記の事情に鑑みてなされたもので、接着剤にＡｇペーストなどのように樹脂が含まれたものを用いたとしても、半導体チップから放熱板への熱伝導性に優れた半導体装置を提供することにある。   The present invention has been made in view of the above circumstances, and even when an adhesive containing a resin such as an Ag paste is used, a semiconductor device excellent in thermal conductivity from a semiconductor chip to a heat sink Is to provide.

請求項１の発明では、放熱板の半導体チップの搭載面に凹部を形成し、この凹部の内部にのみ接着剤を入れて半導体チップを接着するので、半導体チップと放熱板とが直接接触する部分が生ずるようになり、半導体チップから放熱板への熱伝導性が向上する。
請求項２の発明では、凹部を対称形に形成したので、半導体チップと放熱板との熱膨張率の違いによって半導体チップに生ずる応力を平均化できる。
また、凹部の形状としては、請求項３のように、正方形を縦横に連続させた形状に形成しても良いし、請求項４の発明のように、正方形を縦横に連続させた形状に形成しても良い。 According to the first aspect of the present invention, the recess is formed on the mounting surface of the semiconductor chip of the heat sink, and the semiconductor chip is bonded only by inserting the adhesive into the recess, so that the semiconductor chip and the heat sink are in direct contact with each other. As a result, the thermal conductivity from the semiconductor chip to the heat sink improves.
In the invention of claim 2, since the concave portions are formed symmetrically, the stress generated in the semiconductor chip due to the difference in the thermal expansion coefficient between the semiconductor chip and the heat sink can be averaged.
In addition, as the shape of the concave portion, a square shape may be formed continuously in the vertical and horizontal directions as in claim 3, or a square shape may be formed in the vertical and horizontal shape as in the invention of claim 4. You may do it.

以下、本発明の第２の実施形態を図１〜図５を参照しながら説明する。図１はリードフレームを示す。このリードフレーム１は、周辺に多数のリード２を相互に連結した状態で有すると共に、中央部にアイランドと称される放熱板３をリベット４などによって接合して有している。これらリードフレーム１および放熱板３は例えば銅から構成されている。   Hereinafter, a second embodiment of the present invention will be described with reference to FIGS. FIG. 1 shows a lead frame. The lead frame 1 has a large number of leads 2 connected to each other in the periphery, and has a heat radiating plate 3 called an island joined to the center by a rivet 4 or the like. The lead frame 1 and the heat sink 3 are made of copper, for example.

放熱板３の一面には、図５に示すように半導体チップ５が搭載されるが、この放熱板３の半導体チップ５の搭載面３ａには、凹部６が形成されている。この凹部６は、方形、例えば、正方形を縦横に連続させた形態、いわゆる碁盤の目のような形態にて形成された溝６ａからなり、対称形をなしている。この場合の対称形は、放熱板３の半導体チップ５の搭載領域を縦方向に二分する中心線Ａ１、横方向に二分する中心線Ａ２のそれぞれについて線対称であり、放熱板３の半導体チップ５の搭載領域の中心点Ｐについて点対称となるように形成されている。なお、溝６ａの断面形状は、この実施形態では、図２に示すように矩形となっている。   A semiconductor chip 5 is mounted on one surface of the heat radiating plate 3 as shown in FIG. 5, and a recess 6 is formed on the mounting surface 3 a of the semiconductor chip 5 of the heat radiating plate 3. The concave portion 6 is formed of a groove 6a formed in a square shape, for example, a shape in which squares are continued vertically and horizontally, that is, a so-called grid-like shape, and has a symmetrical shape. The symmetrical shape in this case is line symmetric with respect to the center line A1 that bisects the mounting area of the semiconductor chip 5 on the heat sink 3 in the vertical direction and the center line A2 that bisects in the horizontal direction. It is formed so as to be point-symmetric with respect to the center point P of the mounting area. In this embodiment, the cross-sectional shape of the groove 6a is rectangular as shown in FIG.

この放熱板３の搭載面３ａ上に半導体チップ５を搭載するに先立って、凹部６内に例えばＡｇペーストなどからなる接着剤７を注入する。この凹部６への接着剤７の注入は、例えば図３に示すノズル８から接着剤７を吐出させながら、このノズル８を、凹部６を構成する溝６ａに沿って移動させることによって行う。そして、凹部６の全体に接着剤７を、搭載面３ａとほぼ面一となるように満たし、この状態で搭載面３ａに半導体チップ５を搭載する。   Prior to mounting the semiconductor chip 5 on the mounting surface 3 a of the heat radiating plate 3, an adhesive 7 made of, for example, Ag paste is injected into the recess 6. The injection of the adhesive 7 into the recess 6 is performed, for example, by moving the nozzle 8 along the groove 6a constituting the recess 6 while discharging the adhesive 7 from the nozzle 8 shown in FIG. Then, the entire recess 6 is filled with the adhesive 7 so as to be substantially flush with the mounting surface 3a, and the semiconductor chip 5 is mounted on the mounting surface 3a in this state.

この場合、半導体チップ５は、その中心が放熱板３の中心点Ｐに一致させるようにして搭載面３ａ上に搭載する。半導体チップ５を搭載面３ａに搭載すると、図４に示すように、凹部６内の接着剤７が半導体チップ５に接し、半導体チップ５を放熱板３に接着する。そして、半導体チップ５のボンディングパッドとリード２との間をボンディングワイヤ１０によって接続する。この後、リードフレーム１を樹脂封止型にセットし、半導体チップ５を樹脂９によって封止する。この樹脂封止後、リードフレーム１の余分な部分をプレスなどによって切断し、各リード２を接離すると共に、放熱板３もリード２から接離する。以上により、樹脂封止型の半導体装置が製造される。この完成された半導体装置を図５に断面にて示す。   In this case, the semiconductor chip 5 is mounted on the mounting surface 3 a so that the center thereof coincides with the center point P of the heat sink 3. When the semiconductor chip 5 is mounted on the mounting surface 3a, the adhesive 7 in the recess 6 comes into contact with the semiconductor chip 5 and bonds the semiconductor chip 5 to the heat sink 3 as shown in FIG. The bonding pads of the semiconductor chip 5 and the leads 2 are connected by bonding wires 10. Thereafter, the lead frame 1 is set in a resin sealing type, and the semiconductor chip 5 is sealed with a resin 9. After the resin sealing, an excessive portion of the lead frame 1 is cut by a press or the like, and the leads 2 are contacted and separated, and the heat radiating plate 3 is also contacted and separated from the leads 2. Thus, a resin-encapsulated semiconductor device is manufactured. The completed semiconductor device is shown in cross section in FIG.

このように本実施形態によれば、放熱板３と半導体チップ５は、凹部６に入れられた接着剤７によって接着され、それ以外の部分は互いに直接接触する状態になる。このため、樹脂成分を含むＡｇペーストを接着剤７に用いても、搭載面３ａの前面に接着剤７を塗布する場合に比較して、半導体チップ５から放熱板３への熱伝導性が向上する。また、搭載面３ａの全面に接着剤７を塗布する場合には、接着時に半導体チップ５と接着剤７との間に空気を咬み込むと、これが気泡として残り熱伝導性を低下させる原因となるが、接着剤７を全面に塗布しない本実施形態では、気泡として残ることがなくなり、或いは残ってもごく少なくなる。このことからも、半導体チップ５から放熱板３への熱伝導性を向上させて、該半導体チップ５の効率良く冷却することができる。
更に、本実施形態では、凹部６の形状を対称形としてので、放熱板３と半導体チップ５との熱膨張率の相違によって半導体チップ５に作用する応力が全体に均等化されるようになるので、局部的に大きな応力が半導体チップ５に作用することを極力防止できる。 Thus, according to this embodiment, the heat sink 3 and the semiconductor chip 5 are bonded by the adhesive 7 put in the recess 6, and other portions are in direct contact with each other. Therefore, even when an Ag paste containing a resin component is used for the adhesive 7, the thermal conductivity from the semiconductor chip 5 to the heat sink 3 is improved as compared with the case where the adhesive 7 is applied to the front surface of the mounting surface 3 a. To do. Further, when the adhesive 7 is applied to the entire surface of the mounting surface 3a, if air is bitten between the semiconductor chip 5 and the adhesive 7 at the time of bonding, this remains as bubbles and causes a decrease in thermal conductivity. However, in the present embodiment in which the adhesive 7 is not applied to the entire surface, it does not remain as bubbles, or even if it remains, there is very little. Also from this, the thermal conductivity from the semiconductor chip 5 to the heat sink 3 can be improved, and the semiconductor chip 5 can be efficiently cooled.
Furthermore, in this embodiment, since the shape of the recess 6 is symmetrical, the stress acting on the semiconductor chip 5 is equalized as a whole due to the difference in thermal expansion coefficient between the heat sink 3 and the semiconductor chip 5. It is possible to prevent as much as possible a large stress from acting on the semiconductor chip 5 as much as possible.

図６は本発明の第２の実施形態を示すもので、これは、搭載面３ａに、上記第１の実施形態と同様の碁盤の目のような形態の溝１１ａからなる凹部１１を、上記第１の実施形態の状態から４５度回転させた状態に形成したものである。なお、凹部１１の外形は正方形（第１の実施形態では、凹部６の外形状は長方形）となっていて、この凹部１１も、放熱板３を縦方向に二分する中心線Ａ３、横方向に二分する中心線Ａ４のそれぞれについて線対称であり、放熱板３の中心点Ｃ１について点対称となっている。   FIG. 6 shows a second embodiment of the present invention, which is provided with a recess 11 made of a groove 11a having a grid-like shape similar to that of the first embodiment on the mounting surface 3a. It is formed in a state rotated by 45 degrees from the state of the first embodiment. The outer shape of the concave portion 11 is square (in the first embodiment, the outer shape of the concave portion 6 is rectangular), and the concave portion 11 also has a center line A3 that bisects the heat radiating plate 3 in the vertical direction and a horizontal direction. Each of the bisecting center lines A4 is line symmetric, and the center point C1 of the heat sink 3 is point symmetric.

図７は本発明の第３の実施形態を示すもので、これは、凹部１２を、搭載面３ａに縦横に、等間隔に形成された多数の円形の小穴１２ａから構成したものである。この場合も、凹部１２は、放熱板３を縦方向に二分する中心線Ａ５、横方向に二分する中心線Ａ６のそれぞれについて線対称であり、放熱板３の中心点Ｃ２について点対称となるように形成されている。   FIG. 7 shows a third embodiment of the present invention, in which the recess 12 is composed of a large number of circular small holes 12a formed at equal intervals in the mounting surface 3a. Also in this case, the recess 12 is line symmetric with respect to each of the center line A5 that bisects the heat sink 3 in the vertical direction and the center line A6 that bisects in the horizontal direction, and is point symmetric with respect to the center point C2 of the heat sink 3. Is formed.

なお、本発明は上記し且つ図面に示す実施形態に限定されるものではなく、以下のような拡張或いは変更が可能である。
凹部を構成する溝或は小穴の断面の形状は、矩形に限られず、図８（ａ）に示すようにＶ字形、図８（ｂ）に示すようにＵ字形であっても良く、他に種々考えられる。
本発明は、樹脂封止型の半導体装置に限られず、半導体チップを放熱板に搭載する構造の半導体装置一般に適用できる。 The present invention is not limited to the embodiment described above and shown in the drawings, and can be expanded or changed as follows.
The cross-sectional shape of the groove or small hole constituting the recess is not limited to a rectangle, but may be V-shaped as shown in FIG. 8 (a), U-shaped as shown in FIG. 8 (b). There are various possibilities.
The present invention is not limited to a resin-sealed semiconductor device, and can be applied to general semiconductor devices having a structure in which a semiconductor chip is mounted on a heat sink.

本発明の第１の実施形態を示すリードフレームの平面図The top view of the lead frame which shows the 1st Embodiment of this invention 放熱板の部分的な拡大縦断面図Partially enlarged longitudinal section of the heat sink 接着剤の塗布状態を示す断面図Cross-sectional view showing the state of adhesive application 半導体チップを放熱板に接着した状態の縦断面図Longitudinal sectional view of semiconductor chip bonded to heat sink 樹脂封止した半導体装置の縦断面図Longitudinal section of resin-sealed semiconductor device 本発明の第２の実施形態を示すリードフレームの平面図The top view of the lead frame which shows the 2nd Embodiment of this invention 本発明の第３の実施形態を示すリードフレームの平面図The top view of the lead frame which shows the 3rd Embodiment of this invention 凹部の断面形状の他の形態を示す断面図Sectional drawing which shows the other form of the cross-sectional shape of a recessed part

符号の説明Explanation of symbols

図面中、１はリードフレーム、３は放熱板、５は半導体チップ、６，１１，１２は凹部、６ａ，１１ａは溝、７は接着剤、１２ａは小穴を示す。   In the drawings, 1 is a lead frame, 3 is a heat sink, 5 is a semiconductor chip, 6, 11 and 12 are recesses, 6a and 11a are grooves, 7 is an adhesive, and 12a is a small hole.

Claims (4)

放熱板と、この放熱板に搭載される半導体チップとを有する半導体装置において、
前記放熱板の前記半導体チップの搭載面に、部分的に凹部を形成し、この凹部の内部のみに接着剤を入れて前記半導体チップを接着したことを特徴とする半導体装置。 In a semiconductor device having a heat sink and a semiconductor chip mounted on the heat sink,
A semiconductor device, wherein a concave portion is partially formed on a mounting surface of the semiconductor chip of the heat radiating plate, and the semiconductor chip is bonded only by inserting an adhesive into the concave portion. 前記凹部は、前記搭載面に、対称形に形成されていることを特徴とする請求項１記載の半導体装置。   The semiconductor device according to claim 1, wherein the recess is formed symmetrically on the mounting surface. 前記凹部は、前記搭載面に、方形を縦横に連続させた形状に形成されていることを特徴とする請求項１又は２記載の半導体装置。   3. The semiconductor device according to claim 1, wherein the recess is formed in the mounting surface in a shape in which squares are continuously arranged vertically and horizontally. 前記凹部は、前記搭載面に、互いに縦横に隔てられた複数の小凹部からなることを特徴とする請求項１又は２記載の半導体装置。   The semiconductor device according to claim 1, wherein the concave portion includes a plurality of small concave portions that are separated from each other in the vertical and horizontal directions on the mounting surface.
JP2008122193A 2008-05-08 2008-05-08 Semiconductor device Pending JP2009272475A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013116999A1 (en) * 2012-02-09 2013-08-15 Nokia Siemens Networks Oy Method and apparatus for reducing the mechanical stress when mounting assemblies with thermal pads

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013116999A1 (en) * 2012-02-09 2013-08-15 Nokia Siemens Networks Oy Method and apparatus for reducing the mechanical stress when mounting assemblies with thermal pads
US20150129189A1 (en) * 2012-02-09 2015-05-14 Nokia Solutions And Networks Oy Method and Apparatus for Reducing the Mechanical Stress when Mounting Assemblies with Thermal Pads

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