JP2009117867A - Method of manufacturing semiconductor apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To quickly exfoliate an extremely thin chip adhered to an adhesive tape without generating a crack nor a nick. <P>SOLUTION: An exchangeable head 111a of an oscillator 110 is brought into contact with a rear surface of an adhesive tape 4 attached with a plurality of semiconductor chips 1 divided from a semiconductor wafer. The chip 1 is exfoliated from the adhesive tape 4 by applying vertical oscillation whose frequency is 1 kHz-100 kHz and whose amplitude is 1-50 μm. While the vertical oscillation is applied to the adhesive tape 4, horizontal direction tension is applied to the adhesive tape 4. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device manufacturing technique, and in particular, is effective when applied to a process in which a semiconductor wafer bonded to an adhesive tape is diced and divided into a plurality of semiconductor chips, and then each semiconductor chip is peeled off from the adhesive tape. Technology.

  In recent years, for the purpose of promoting high-density mounting of semiconductor devices, a stacked package in which a plurality of semiconductor chips are mounted three-dimensionally on a wiring board has been put into practical use. When assembling such a stacked package, A semiconductor chip (hereinafter simply referred to as a chip) processed to a thickness of about several tens of μm is used.

  In order to mount such a thin chip on a wiring board, first, a tape for protecting the integrated circuit is attached to the main surface of a semiconductor wafer (hereinafter simply referred to as a wafer) on which a desired integrated circuit is formed. By polishing and etching the back surface of the wafer in this state, the thickness is reduced to about several tens of μm. Subsequently, dicing is performed with the adhesive tape attached to the back surface of the thin wafer to divide the wafer into a plurality of chips. Thereafter, a push-up pin or the like is pressed against the back surface of the adhesive tape to peel off the chips one by one from the adhesive tape, and the peeled chips are picked up by a collet and conveyed onto a wiring board for pelletization.

  By the way, in the assembly process of the package using the extremely thin chip as described above, when the chip divided by dicing is peeled off from the adhesive tape and picked up, the chip is likely to be cracked or chipped, so this is prevented. Consideration is necessary.

  Japanese Patent Application Laid-Open No. 6-295930 (Patent Document 1) discloses a technique for preventing cracking and chipping when peeling a chip from an adhesive tape. The chip peeling apparatus described in this document includes a support base that supports a pressure-sensitive adhesive sheet to which a wafer divided into a plurality of chips is bonded, a peeling head disposed under the support base, and an inside of the peeling head. And a peeling pin comprising a sliding pin that rubs against the back surface of the pressure-sensitive adhesive sheet and a push-up pin that pushes up the chip, and a drive means that moves the slide pin and the push-up pin in the horizontal direction and the vertical direction, respectively.

  In order to peel off the chip from the adhesive sheet using the peeling device, first, a sliding pin is applied to the adhesive sheet where the chip to be peeled is adhered from the back surface, and the sliding pin is placed horizontally with respect to the sheet surface. By rubbing while reciprocating in any direction, the adhesive force between the adhesive sheet and the chip is weakened. Next, when both the sliding pin and the push-up pin are raised and the chip is lifted, the chip having a weak adhesive force is peeled from the adhesive sheet without requiring a strong push-up force.

JP-A-6-295930

  The prior art tries to weaken the adhesive force between the adhesive sheet and the chip by applying a sliding pin from the back surface to the adhesive sheet and rubbing the sliding pin while reciprocating in a horizontal direction with respect to the sheet surface. However, even if horizontal sliding is applied to the adhesive sheet, it is difficult to weaken the adhesive force in a short time.

  In addition, since the chip processed to a thickness of about several tens of μm as described above is very easy to break, when peeling such a thin chip from the adhesive sheet, the case where the thick chip is peeled from the adhesive sheet Requires different ideas.

  An object of the present invention is to provide a technique capable of quickly peeling an extremely thin chip attached to an adhesive tape without causing breakage or chipping.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

The method for manufacturing a semiconductor device of the present invention includes the following steps.
(A) a step of preparing a semiconductor wafer having an integrated circuit formed on the main surface, and an adhesive tape having a diameter larger than that of the semiconductor wafer and coated with an adhesive on the surface thereof;
(B) a step of attaching the adhesive tape to the back surface of the semiconductor wafer and then dicing the semiconductor wafer into a plurality of semiconductor chips;
(C) a step of adsorbing and fixing a semiconductor chip around the semiconductor chip to be peeled and the adhesive tape under the semiconductor chip among the plurality of semiconductor chips;
(D) While applying a horizontal tension to the surface of the adhesive tape to which the plurality of semiconductor chips are attached, a vibrator is brought into contact with the back surface of the adhesive tape, and peeling is performed among the plurality of semiconductor chips. The semiconductor chip is peeled from the adhesive tape by applying longitudinal vibration having a frequency in the range of 1 kHz to 100 kHz and an amplitude in the range of 1 μm to 50 μm through the vibrator to the semiconductor chip to be subjected to the process and the adhesive tape below the semiconductor chip. Process.

  Among the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  After dicing the semiconductor wafer attached to the adhesive tape and dividing it into a plurality of semiconductor chips, when peeling each semiconductor chip from the adhesive tape, even if it is a very thin semiconductor chip, no cracks or chipping occurs, It can be peeled off quickly.

It is a top view of the semiconductor chip used for manufacture of the semiconductor device which is one embodiment of the present invention. It is a side view which shows the etching process of a semiconductor wafer. It is a side view which shows the process of affixing a dicing tape on a semiconductor wafer. It is a side view which shows the dicing process of a semiconductor wafer. It is a top view which shows the state which fixed the semiconductor wafer and the dicing tape to the wafer ring, and has arrange | positioned the pressing plate above it and arrange | positioned the expand ring below. It is sectional drawing which shows the state which fixed the semiconductor wafer and the dicing tape to the wafer ring, has arrange | positioned the press plate above it, and has arrange | positioned the expand ring below. It is sectional drawing which shows the state which gave the tension | tensile_strength of the dicing tape by pinching | interposing a dicing tape with a wafer ring with a pressing plate and an expand ring. It is principal part sectional drawing explaining the peeling method of the semiconductor chip which affixed the dicing tape. It is a principal part expanded sectional view of FIG. Partially broken side surface showing the vibrator incorporated in the suction piece of the chip peeling device, the displacement of the vertical vibration resonating with the vibrator and the positional relationship of the vibrator, and the longitudinal direction resonating with the vibrator It is a figure which each shows the amplitude of a vibration, and the positional relationship of a vibrator | oscillator. It is a partially broken side view which shows the main body of the vibrator | oscillator shown in FIG. It is a timing diagram explaining the peeling method of a semiconductor chip. It is principal part sectional drawing explaining the peeling method of a semiconductor chip. It is principal part sectional drawing explaining the peeling method of a semiconductor chip. It is principal part sectional drawing explaining the peeling method of a semiconductor chip. It is principal part sectional drawing explaining the peeling method of a semiconductor chip. It is a perspective view which shows an example of the shape of the head attached to the vibrator | oscillator shown in FIG. FIG. 11 is a perspective view illustrating another example of the shape of the head attached to the vibrator illustrated in FIG. 10. FIG. 11 is a perspective view illustrating another example of the shape of the head attached to the vibrator illustrated in FIG. 10. It is principal part sectional drawing explaining the peeling method of a semiconductor chip. It is sectional drawing of the wiring board which shows the pelletizing process of a semiconductor chip. It is sectional drawing of the wiring board which shows the lamination | stacking process of a semiconductor chip. It is sectional drawing of the wiring board which shows the resin sealing process of a semiconductor chip. It is a timing diagram explaining the peeling method of a semiconductor chip. It is principal part sectional drawing explaining the peeling method of a semiconductor chip. It is principal part sectional drawing explaining the peeling method of a semiconductor chip. It is principal part sectional drawing explaining the peeling method of a semiconductor chip.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted.

(Embodiment 1)
The present embodiment is applied to the manufacture of a stacked package in which a plurality of chips are three-dimensionally mounted on a wiring board, and the manufacturing method will be described in the order of steps with reference to FIGS.

  First, an integrated circuit is formed on a main surface of a wafer 1A made of single crystal silicon as shown in FIG. 1 according to a known manufacturing process, and then bonding pads of a plurality of chip formation regions 1A ′ partitioned by lattice-like scribe lines. The probe is applied to 2 and an electrical test is performed to determine the quality of each chip formation region 1A ′.

  Next, as shown in FIG. 2, a back grind tape 3 for protecting the integrated circuit is attached to the main surface side of the wafer 1A, and in this state, the back surface of the wafer 1A is ground by a grinder, and further the wafer generated by grinding. By removing the damaged layer on the back surface by a method such as wet etching, dry polishing, plasma etching, the thickness of the wafer 1A is reduced to 100 μm or less, for example, about 50 μm to 90 μm. In the methods such as wet etching, dry polishing, and plasma etching, the processing speed in the thickness direction of the wafer is slower than the grinding speed in grinding with a grinder, but compared with grinding with a grinder, The damage to the inside of the wafer due to these treatments is not only small, but the damaged layer inside the wafer generated by grinding by the grinder can be removed, and there is an effect that the wafer and the chip are hardly broken.

  Next, after the back grind tape 3 is removed, as shown in FIG. 3, the dicing tape 4 is attached to the back surface of the wafer 1A, and the peripheral portion of the dicing tape 4 is fixed to the wafer ring 5 in this state. The dicing tape 4 is formed by applying an ultraviolet (UV) curable pressure-sensitive adhesive that is cured by ultraviolet irradiation to the surface of a resin film made of polyolefin (PO), polyvinyl chloride (PVC), polyethylene terephthalate (PET), or the like. Is cut into a circle.

  Next, as shown in FIG. 4, the wafer 1 </ b> A is diced using a dicing blade 6 to divide the wafer 1 </ b> A into a plurality of chips 1. At this time, since the divided chips 1 are left on the dicing tape 4, the dicing tape 4 is not completely cut. Subsequently, when the dicing tape 4 is irradiated with ultraviolet rays in this state, the adhesive applied to the dicing tape 4 is cured and its adhesiveness is lowered. Thereby, the chip 1 is easily peeled off from the dicing tape 4, and the chip 1 once peeled off from the dicing tape 4 in the chip peeling step described later is difficult to reattach to the dicing tape 4.

  Next, as shown in FIG. 5 (plan view) and FIG. 6 (cross-sectional view), the pressing plate 7 is disposed above the dicing tape 4 fixed to the wafer ring 5, and the expand ring 8 is disposed below. Then, as shown in FIG. 7, the pressing plate 7 is pressed against the upper surface of the wafer ring 5, and the peripheral portion on the back surface of the dicing tape 4 is pushed upward by the expanding ring 8. If it does in this way, the dicing tape 4 will receive the strong tension | tensile_strength which goes to the periphery from the center part, and will be extended without slack.

  Next, in this state, the expand ring 8 is positioned on the stage 101 of the chip peeling apparatus 100 shown in FIG. 8 to hold the dicing tape 4 horizontally. Inside the stage 101, a suction piece 102 in which a vibrator 110 that oscillates longitudinal vibration is incorporated is disposed. The suction piece 102 can be moved in the horizontal direction and the vertical direction by a drive mechanism (not shown).

  FIG. 9 is an enlarged cross-sectional view of the vicinity of the upper end portion of the suction piece 102. One end portions of a plurality of suction ports 103 are arranged on the periphery of the upper surface of the suction piece 102 facing the back surface of the dicing tape 4. The inside of these suction ports 103 is depressurized by a suction mechanism (not shown).

  A window hole 104 through which the upper end portion (exchange head 111a) of the vibrator 110 passes is provided at the center of the upper surface of the suction piece 102. The vibrator 110 moves up and down independently of the suction piece 102 by a drive mechanism (not shown), and when the tip of the replacement head 111a protruding above the window hole 104 comes into contact with the back surface of the dicing tape 4, A vertical vibration in the vertical direction is applied to one chip 1 and the dicing tape 4 below the chip 1.

  A suction collet 105 supported by a moving mechanism (not shown) is disposed above the dicing tape 4 positioned on the stage 101. At the center of the bottom surface of the suction collet 105, one end portion of the suction port 106 that is decompressed by a suction mechanism (not shown) is arranged, so that one chip 1 to be peeled can be selectively sucked and held. It is like that.

  FIG. 10 is a partially broken side view showing the vibrator 110 incorporated in the suction piece 102 of the chip peeling apparatus 100. The positional relationship between the vibrator 110 and the displacement of the longitudinal vibration resonating with the vibrator 110 is shown. FIG. 11 shows a vibrator main body 112 of the vibrator 110. FIG. 11 is a composite of the figure, a figure showing the amplitude of the vibration in the vertical direction resonating with the vibrator 110, and the positional relationship of the vibrator 110. It is a partially broken side view.

  The vibrator 110 includes a vibrator body 112 and a resonance unit 113. The resonance part 113 is a part that resonates the longitudinal vibration generated from the piezoelectric element 114 incorporated therein and amplifies the amplitude thereof. The resonance portion 113 is designed so that the length in the direction (vertical direction in the figure) in which the longitudinal vibration is transmitted becomes one half of the wavelength of the longitudinal vibration. For example, in the case shown in FIG. 10, when the amplitude of the longitudinal vibration at the end of the piezoelectric element 114 that is a vibration generation source by the piezoelectric element 114 is 3 μm, the amplitude at the replacement head 111a is about 15 μm. In order to obtain such vibration amplification, the thickness of the piezoelectric element 114 (the height of the piezoelectric element 114 along the vertical direction in FIG. 10) is preferably shorter than the wavelength of the longitudinal vibration. It is preferable to make the diameter of the exchange head 111 a smaller than the diameter of the piezoelectric element 114.

  The vibrator main body 112 is a portion that vibrates by resonating with the longitudinal vibration amplified by the resonance portion 113, and is attached to and detached from the resonance portion 113 by fixing the flange 115 with a clamp 116, a holder 117, and a seal 118. It is attached freely. A flange 115 for attaching the vibrator main body 112 to the resonance portion 113 is disposed at a node of the longitudinal vibration in order to minimize the attenuation of the longitudinal vibration.

  The vibrator main body 112 is designed such that the length in the direction in which the longitudinal vibration is transmitted is ½ of the wavelength of the longitudinal vibration, and the entire length of the vibrator 110 combined with the resonance unit 113 is 1 of the longitudinal vibration. It matches the wavelength.

  The length of the vibrator main body 112 is not limited to a half of the wavelength of the longitudinal vibration, but in order to increase the vibration amplification factor, the position of the antinode of the vibration or the vicinity thereof It is preferable to set the length so that the tip of the replacement head 111a is positioned at a position where the amplitude is larger than at least vibrations oscillated from the end of the piezoelectric element 114. Further, the length of the vibrator main body 112 may be a length obtained by adding a length that is an integral multiple of the wavelength to a length that is a half of the wavelength. In order to obtain the amplification factor of vibration, it is preferable to set the vibrator body 112 to a length of one half of the wavelength or the vicinity thereof.

  The replacement head 111a screwed to the tip of the vibrator main body 112 is a portion that contacts the dicing tape 4 and applies longitudinal vibration. As the exchange head 111a, an optimum head is selected according to the size of the chip 1 and the like. Since the tip portion of the vibrator main body 112 to which the exchange head 111a is attached corresponds to a position where the amplitude of the longitudinal vibration is maximized, the longitudinal vibration can be efficiently applied to the dicing tape 4.

  Since the vibrator 110 configured as described above can cope with a plurality of types of chips 1 by simply replacing the exchange head 111a, the same vibrator main body 112 and resonance unit 113 can be used regardless of the type of the chip 1. It can be used, and the manufacturing cost of the chip peeling apparatus 100 can be reduced. Further, since the same vibrator main body 112 and the resonance part 113 can be used regardless of the type of the chip 1, the longitudinal vibration wavelength or The amplitude does not vary.

  The configuration of the vibrator 110 is not limited to the configuration described in the present embodiment, but the vibration generated from the vibration source such as the piezoelectric element 114 is amplified by resonating with the vibrator 110. High-frequency vibrations can be generated with low energy, and application of lateral vibrations can be suppressed. By suppressing the application of the vibration in the horizontal direction, the chip 1 is prevented from being shifted in the horizontal direction or rotating when the vibration is applied, and the chip 1 is mounted with being shifted from a predetermined position in the subsequent pelletizing process. It is possible to prevent the occurrence of defects due to failure.

  The chip 1 is peeled off using the chip peeling apparatus 100 according to the timing shown in FIG. In order to peel off the chip 1 in accordance with the timing shown in the figure, first, as shown in FIG. 13, the suction piece 102 is raised, and the upper surface thereof is placed on the back surface of the dicing tape 4 located under the chip 1 to be peeled off. To make the dicing tape 4 adsorbed. At this time, if the suction piece 102 is slightly pushed up (for example, about 400 μm), further tension can be applied to the dicing tape 4 to which the horizontal tension is applied by the pressing plate 7 and the expanding ring 8 described above. .

  At substantially the same time as the suction piece 102 is raised, the suction collet 105 is lowered and the bottom surface thereof is brought into contact with the top surface of the chip 1 to be peeled, and the chip 1 is sucked and lightly pressed downward. Since the chip 1 is peeled off in a very short time (usually about 0.05 to 0.5 seconds), the chip 1 is pressed with the suction collet 105 before the dicing tape 4 is vibrated. Thus, the chip 1 peeled off from the dicing tape 4 can be prevented from jumping out due to vibration.

  In this state, the vibrator 110 is operated (timing a in FIG. 12). At this time, the replacement head 111 a of the vibrator 110 is not in contact with the back surface of the dicing tape 4.

  A preferable oscillation frequency of the vibrator 110 is in a range of 1 kHz to 100 kHz, and an amplitude is in a range of 1 μm to 50 μm. The chip 1 can be peeled even when the frequency is less than 1 kHz, but it is not practical because it takes a long time for peeling. Similarly, peeling is possible even if the amplitude is less than 1 μm, but it takes a long time for peeling. On the other hand, when the frequency exceeds 100 kHz, side effects such as an increase in the amount of heat generated by the dicing tape 4 due to vibration energy become apparent. On the other hand, when the amplitude exceeds 50 μm, particularly when the chip 1 is extremely thin, cracks occur or the integrated circuit is damaged. In the present embodiment, the oscillation frequency of the vibrator 110 is set to 60 kHz and the amplitude is set to 10 μm.

  Next, as shown in FIG. 14, the vibrator 110 is raised, and the replacement head 111a is brought into contact with the back surface of the dicing tape 4 located under the chip 1 to be peeled (timing b in FIG. 12). At this time, it is possible to apply a stronger horizontal tension to the dicing tape 4 by slightly pushing up the vibrator 110 (for example, about 400 μm) (timing bc in FIG. 12).

  When the vibrating exchange head 111 a comes into contact with the back surface of the dicing tape 4, longitudinal vibration in a direction perpendicular to the surface of the dicing tape 4 is applied to the dicing tape 4 and the chip 1.

  Here, the mechanism of chip peeling accompanying vibration application from the exchange head 111a at the tip of the vibrator 110 will be described.

  The exchange head 111a repeats high-speed ascent and descent in a short time due to its own vibration. When the exchange head 111a is raised, an upward movement is applied to the dicing tape 4 and the chip 1 by the pressure from the exchange head 111a. When the exchange head 111a finishes its own upward movement, the replacement head 111a rapidly changes to the downward movement. During the downward movement of the exchange head 111a, the dicing tape 4 and the chip 1 cannot follow the movement of the exchange head 111a because the movement is high speed and the speed change from the upward movement to the downward movement is severe. Even away from the exchange head 111a. During the downward movement of the exchange head 111a, the tip 1 tries to continue the upward movement in accordance with the law of inertia, whereas a strong tension is applied to the dicing tape 4. Downward acceleration works to restore to a small state. As described above, a force for peeling the chip 1 and the dicing tape 4 works due to the inertia of the chip 1 and the acceleration due to the tension applied to the dicing tape 4 during the downward movement of the exchange head 111a.

  The separation between the chip 1 and the dicing tape 4 starts from the end of the chip 1 where the tension applied to the dicing tape 4 is the largest, and sequentially proceeds toward the inside of the chip 1.

  In order to apply sufficient motion to the chip 1 during the upward movement of the exchange head 111a, the exchange head 111a needs to rise at a high speed. In order to obtain sufficient acceleration generated in the dicing tape 4 during the downward movement of the exchange head 111a, it is necessary to apply a strong tension to the dicing tape 4 in advance. In order to sufficiently exhibit the acceleration generated by the tension applied to the dicing tape 4, the speed of the exchange head 111a changes from ascending motion to descending motion at such a moment that the dicing tape 4 cannot follow the exchange head 111a. And it is necessary to move down at high speed. Further, in order to rapidly advance the peeling generated by these mechanisms, it is necessary to repeat the ascending and descending movements of the exchange head 111a more times in a short time.

  Next, as shown in FIG. 15, the chip 1 separated from the dicing tape 4 is pulled up while being sucked and held by the suction collet 105, and at the same time, the operation of the vibrator 110 is stopped (timing d in FIG. 12).

  The time required from the start of applying vibration to the dicing tape 4 until the chip 1 is pulled up (timing b to timing d in FIG. 12) is the size and thickness of the chip 1, the material of the dicing tape 4, the type of adhesive, and the dicing tape. 4 depends on many factors, such as the frequency and amplitude of vibration applied to 4, the magnitude of tension applied to the dicing tape 4, and the size and shape of the exchange head 111 a. Therefore, the timing for lifting the chip 1 upward is calculated in advance by experiments.

  In the present embodiment, the vibration to the dicing tape 4 is stopped simultaneously with the chip 1 being peeled from the dicing tape 4. The reason is that if high frequency vibration is continuously applied to the dicing tape 4 where the chip 1 has been removed, the dicing tape 4 is melted by heat generated by friction between the exchange head 111a and the dicing tape 4, thereby replacing the dicing tape 4. This is because the head 111a may be contaminated or the tension applied to the dicing tape 4 may be reduced.

  In order to stop the vibration of the vibrator 110 in synchronization with the pulling up of the chip 1 by the suction collet 105, for example, the fluctuation of the load exerted on the replacement head 111a by the suction collet 105 holding the chip 1 is changed by current, voltage or impedance. What is necessary is just to detect by a change etc. If the chip 1 is peeled to some extent, the chip 1 can be peeled off from the dicing tape 4 only by the force with which the suction collet 105 sucks the chip 1, so that the vibration of the vibrator 110 immediately before the chip 1 is pulled upward. May be stopped.

  Next, as shown in FIG. 16, the vibrator 110 and the exchange head 111a are lowered (timing e in FIG. 12). Through the steps so far, the step of peeling one chip 1 from the dicing tape 4 is completed.

  After that, when the suction collet 105 that has transported the chip 1 peeled from the dicing tape 4 to the next step (pellet attaching step) returns to the chip peeling device 100, the following steps are performed according to the procedure shown in FIGS. The operation of peeling the chip 1 from the dicing tape 4 is started, and thereafter the good chip 1 on the dicing tape 4 is peeled according to the same procedure.

  The time required from the start of applying vibration to the dicing tape 4 to lifting the chip 1 can be shortened by optimizing the size and shape of the replacement head 111a.

  In general, the area of the upper surface of the exchange head 111a (the surface in contact with the back surface of the dicing tape 4) is desirably somewhat smaller than the area of the chip 1 to be peeled. When the area of the upper surface of the exchange head 111a is larger than the area of the chip 1, the dicing tape 4 near the periphery of the chip 1 is sandwiched from both sides by the chip 1 and the exchange head 111a. The progress of peeling toward the slows down. On the other hand, if the area of the upper surface of the exchange head 111a is too small compared to the area of the chip 1, when the vibration is applied to the dicing tape 4, the interface between the dicing tape 4 and the end of the chip 1 that becomes the peeling start point of the chip 1 is formed. Since the stress cannot be sufficiently concentrated and a strong bending stress is applied to the chip 1, the chip 1 may be broken. From this point of view, it can be seen that a shape that makes point contact with the dicing tape 4, such as a push-up pin, is not preferable as the shape of the exchange head 111a. Although not particularly limited, in the present embodiment, when the size of the chip 1 is 3 mm square to 7 mm square, the replacement head 111a having an area of the upper end of 2.5 mm square is used, and the size of the chip 1 is 6 mm square. In the case of a 10 mm square, a 4 mm square exchange head 111a is used.

  Further, for example, as in the exchange head 111b shown in FIG. 17, a fillet may be formed in the peripheral portion of the upper surface, or the curvature radius (R1) of the peripheral portion may be made smaller than the curvature radius (R2) of the central portion. (R1 <R2). With such a shape, vibration can be efficiently applied to the chip 1 by the central portion of the exchange head 111b having a large radius of curvature, and bending stress generated inside the chip 1 can be reduced. Further, a peripheral portion having a smaller radius of curvature than the central portion of the head is formed around the central portion of the exchange head 111b, and the peripheral portion of the head is disposed inside the end portion of the semiconductor chip 1 to vibrate. Is applied, it is possible to sufficiently concentrate the peeling stress at the interface between the end of the chip 1 that becomes the peeling start point of the dicing tape 4 and the chip 1, thereby facilitating the start of peeling, and from the periphery of the chip 1. Since peeling toward the inner side easily proceeds, the chip 1 can be peeled in a short time. For example, when the peripheral portion of the upper surface is chamfered like the exchange head 111c shown in FIG. 18, the same effect as described above can be obtained.

  Further, the shape of the central portion of the head having a large curvature radius is not limited to a flat shape as shown in FIG. 17 or FIG. 18, and has a convex curvature if the curvature radius is larger than the peripheral portion of the head. You may adopt a thing. Furthermore, as with the exchange head 111d shown in FIG. 19, a fillet may be formed in the periphery of the upper surface, and a recess may be provided in the center. In this case, as shown in FIG. 20, when the back surface of the dicing tape 4 is pushed up by the replacement head 111d, the entire chip 1 warps in accordance with the recess of the replacement head 111d. The strength increases, and even if high vibration energy is applied, it becomes difficult to break. Further, since the peripheral portion of the chip 1 is warped upward, the peeling angle (θ) of the dicing tape 4 with respect to the chip 1 becomes larger, so that the chip 1 is easily peeled off. When providing a dent in the central part of the exchange head 111d, the bottom surface of the suction collet 105 may be formed in a convex shape in accordance with the dent of the exchange head 111d.

  Further, when the tip 1 is very small, if a portion having a large radius of curvature is provided in the central portion of the replacement head 111b, the distance from the peripheral portion of the replacement head 111b to the end portion of the tip 1 is reduced, and the tip that becomes the peeling start point Since it is difficult to concentrate a sufficient stress on the interface at one end, the exchange head 111b having a small curvature radius may be used without providing the exchange head 111b with a central portion having a large curvature radius.

  As shown in FIG. 21, the chip 1 conveyed to the pelletizing process is mounted on the wiring board 11 via an adhesive 10 or the like, and is electrically connected to the electrode 13 of the wiring board 11 via an Au wire 12. Is done.

  Next, as shown in FIG. 22, the second chip 14 is laminated on the chip 1 mounted on the wiring substrate 11 via an adhesive 10 or the like, and the electrodes of the wiring substrate 11 are connected via Au wires 15. 16 is electrically connected. The second chip 14 is a silicon chip on which an integrated circuit different from the chip 1 is formed. After being peeled from the dicing tape 4 by the above-described method, the second chip 14 is transported to the pelletizing process and laminated on the chip 1. .

  Thereafter, the wiring substrate 11 is transferred to a molding process, and the chips 1 and 14 are sealed with a molding resin 17 as shown in FIG.

(Embodiment 2)
The chip 1 can be peeled according to the timing shown in FIG. In order to peel off the chip 1 in accordance with the timing shown in the figure, first, as shown in FIG. 25, the suction piece 102 is raised, and the upper surface thereof is placed on the back surface of the dicing tape 4 located under the chip 1 to be peeled off. To make the dicing tape 4 adsorbed. In the first embodiment, at this time, the suction collet 105 is lowered and the bottom surface thereof is brought into contact with the top surface of the chip 1 to be peeled. In this embodiment, the suction collet 105 is disposed in the vicinity of the top surface of the chip 1. And stop without contacting the chip 1 (timing a in FIG. 25).

  Next, as shown in FIG. 26, the vibrator 110 is moved up to bring the replacement head 111a into contact with the back surface of the tedding dome 4, and the application of vibration is started (timing f in FIG. 24). At this time, since the suction collet 105 is not in contact with the chip 1, the vibration resistance is small, and a vibration with a larger energy can be efficiently applied at the start of peeling.

  Next, as shown in FIG. 27, the vibrator 110 continues to rise (push up) while applying vibration, and before the chip 1 is completely removed from the dicing tape 4, the upper surface of the chip 1 is placed on the bottom surface of the suction collet 105. The chip 1 is sucked and held by the suction collet 105 (timing b in FIG. 24). Subsequently, the raising of the vibrator 110 is stopped (timing c in FIG. 24), and at the same time as the chip 1 is completely peeled from the dicing tape 4 or immediately before the suction collet 105 is pulled up together with the chip 1, vibration is generated. The operation of the child 110 is stopped (timing d in FIG. 24).

  When the chip 1 is peeled in accordance with the timing as described above, since the vibration by the vibrator 110 is started before the suction collet 105 and the chip 1 come into contact with each other, the vibration resistance can be reduced, and the peeling is started. And the progression thereof can be further promoted. Further, the vibrator 110 continues to rise after the vibration of the vibrator 110 is started, and the chip 1 is held by contacting the chip 1 and the suction collet 105 before the chip 1 is completely peeled off from the dicing tape 4. It is possible to prevent the peeled chip 1 from falling off the dicing tape 4.

  The invention made by the present inventor has been specifically described based on the above embodiment, but the present invention is not limited to the above embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  In the above embodiment, longitudinal vibration is applied to the back surface of the dicing tape. However, a standing wave called S mode may be applied. In this case, it is necessary to devise a method of selectively applying a standing wave only in the vicinity of the chip to be peeled.

  In the above-described embodiment, the case where the wafer is thinned to a thickness of several tens of μm has been described. However, the thickness of the wafer is not limited to these, and the present invention is applied to a thinner wafer or a thicker wafer. You may apply.

  The present invention can be applied to manufacture of a stacked package in which a plurality of chips are three-dimensionally mounted on a wiring board.

DESCRIPTION OF SYMBOLS 1 Semiconductor chip 1A Semiconductor wafer 1A 'Chip formation area 2 Bonding pad 3 Back grind tape 4 Dicing tape (adhesive tape)
5 Wafer Ring 6 Dicing Blade 7 Holding Plate 8 Expanding Ring 10 Adhesive 11 Wiring Board 12 Au Wire 13 Electrode 14 Semiconductor Chip 15 Au Wire 16 Electrode 100 Chip Peeling Device 101 Stage 102 Suction Block 103 Suction Port 104 Window Hole 105 Suction Collet 106 Suction port 110 Vibrators 111a to 111d Exchange head 112 Vibrator body 113 Resonant section 114 Piezoelectric element 115 鍔 116 Clamp 117 Holder 118 Seal

Claims (9)

A semiconductor device manufacturing method including the following steps:
(A) a step of preparing a semiconductor wafer having an integrated circuit formed on the main surface, and an adhesive tape having a diameter larger than that of the semiconductor wafer and coated with an adhesive on the surface thereof;
(B) a step of attaching the adhesive tape to the back surface of the semiconductor wafer and then dicing the semiconductor wafer into a plurality of semiconductor chips;
(C) a step of adsorbing and fixing a semiconductor chip around the semiconductor chip to be peeled and the adhesive tape under the semiconductor chip among the plurality of semiconductor chips;
(D) While applying a horizontal tension to the surface of the adhesive tape to which the plurality of semiconductor chips are attached, a vibrator is brought into contact with the back surface of the adhesive tape, and peeling is performed among the plurality of semiconductor chips. The semiconductor chip is peeled from the adhesive tape by applying longitudinal vibration having a frequency in the range of 1 kHz to 100 kHz and an amplitude in the range of 1 μm to 50 μm through the vibrator to the semiconductor chip to be subjected to the process and the adhesive tape below the semiconductor chip. Process.   2. The method of manufacturing a semiconductor device according to claim 1, wherein the vibrator is operated prior to the step of bringing the vibrator into contact with the back surface of the adhesive tape.   2. The semiconductor device according to claim 1, wherein a collet is brought into contact with a main surface of the semiconductor chip to be peeled when the longitudinal vibration is applied to the semiconductor chip and the adhesive tape under the semiconductor chip. Method.   2. The longitudinal vibration is applied to the semiconductor chip and the adhesive tape under the semiconductor chip, and then the semiconductor chip is pulled upward while being held by a collet, and at the same time, the operation of the vibrator is stopped. The manufacturing method of the semiconductor device of description.   2. The method of manufacturing a semiconductor device according to claim 1, wherein an area of a portion of the vibrator that contacts a back surface of the adhesive tape is smaller than an area of the semiconductor chip.   The pressure-sensitive adhesive applied to the pressure-sensitive adhesive tape is an ultraviolet curable pressure-sensitive adhesive, and after the semiconductor wafer is diced and divided into the plurality of semiconductor chips, the vibrator is brought into contact with the back surface of the pressure-sensitive adhesive tape. 2. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of reducing the adhesive strength of the pressure-sensitive adhesive tape by irradiating the pressure-sensitive adhesive tape with ultraviolet rays prior to the step.   The method of manufacturing a semiconductor device according to claim 1, further comprising a step of mounting the semiconductor chip on a mounting substrate after the step (d).   The method of manufacturing a semiconductor device according to claim 1, wherein the thickness of the semiconductor chip is 100 μm or less.   2. The semiconductor according to claim 1, wherein after the longitudinal vibration is applied to the semiconductor chip and the adhesive tape below the semiconductor chip, the operation of the vibrator is stopped by detecting a change in impedance of the vibrator. Device manufacturing method.

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