JP2009117489A - Semiconductor device package and mounting board - Google Patents

Abstract

A semiconductor device package and a mounting substrate capable of efficiently and quickly dissipating heat are provided.
[Solution]
A semiconductor element (heating element) package used for a semiconductor element includes a plurality of circuit boards including at least a circuit board 3a for mounting the heating element 2 and a circuit board 3c for mounting a thermal ball 4, and a plurality of circuit boards. And a thermal via radiation hole 5 penetrating through the plurality of circuit boards and the first thermal conductive layer 6a (6b), the first thermal conductive layer 6a (6b) composed of a thermal conductive material. The inner wall of the thermal via radiating hole 5 formed is covered with a heat conductive material.
[Selection] Figure 1

Description

  The present invention relates to a semiconductor element or a semiconductor element package on which a mold resin for sealing the semiconductor element is mounted, and a mounting substrate on which the semiconductor element package is mounted. More specifically, the present invention relates to a heat dissipation mounting structure for the semiconductor element package and a heat dissipation mounting structure for the mounting substrate.

  In recent years, in the field of electronic and communication equipment such as mobile phones and liquid crystal televisions, devices have been downsized year by year, and semiconductor element packages that efficiently and quickly release heat released from chips (heat generating elements) to the outside. A heat dissipating mounting structure is desired.

  As a heat dissipation mounting structure for this type of semiconductor element package, a heat dissipation mounting structure in which a heat generating element is sealed with a mold resin and a heat sink metal member is attached to the mold resin itself has been known. The heat sink is a metal plate used for heat dissipation, and is often used in combination with a cooling fan. The heat sink is used for cooling components that may malfunction due to heat generation.

  Alternatively, a heat dissipating mounting structure is known in which a solder ball called a thermal ball is mounted between a circuit board on which a heat generating element or a heat generating element sealed with a mold resin is mounted, and a mounting board. By using this heat dissipation mounting structure, the heat released from the heat generating element is transmitted to the mounting substrate side via the thermal ball, whereby the heat is released from the mounting substrate to the outside.

  Based on FIGS. 6 and 7, a conventional semiconductor device package heat dissipation mounting structure using a thermal ball will be described.

  FIG. 6 shows a conventional heat dissipating mounting structure 50 of a semiconductor element package related to a semiconductor element (heat generating element) sealed with a mold resin. As shown in FIG. 6, the semiconductor device package heat dissipation mounting structure 50 includes a plurality of substantially spherical thermal balls 51. The thermal balls 51 are bonded to the lower surface of the rectangular circuit board 52 and the upper surface of the rectangular mounting board 53, respectively. On the upper surface of the circuit board 52, a mold resin 55 in which the heat generating element 54 is sealed is mounted. The heating element 54 and the circuit board 52 are electrically connected via a metal wire 56, and the wire 56 is also sealed with a mold resin 55.

  Based on FIG. 6, the heat dissipation path of the conventional heat dissipation mounting structure 50 for a semiconductor device package will be described.

  The heat released from the heating element 54 is released to the outside mainly by the following heat dissipation paths 57 and 58, thereby cooling the heating element 54.

Heat dissipation path 57: heating element 54 → mold resin 55 → atmosphere Heat dissipation path 58: heating element 54 and mold resin 55 → circuit board 52 → thermal ball 51 → mounting board 53 → atmosphere The amount of heat released by the heat dissipation path 58 is a semiconductor element package. Number, type, size, product substrate, wiring length, wiring width, wiring density, number of substrate layers, layer configuration, thickness, substrate material, and other factors. The heat radiation amount by the heat radiation path 58 is said to occupy about 5 to 50% of the total heat radiation amount emitted from the heat generating element 54. Therefore, when using the conventional heat dissipation mounting structure 50, it is necessary to consider all of the components including the mounting substrate 53.

  FIG. 7 shows a conventional heat dissipation mounting structure 60 of a semiconductor device package by a flip chip method. In the flip chip method, the electrode of the circuit board 52 and the electrode of the heat generating element 54 are electrically connected by the bumps 61. That is, the flip-chip method has a structure in which the upper surface of the circuit board 52 and the lower surface of the heat generating element 54 face each other and the electrodes are electrically and mechanically connected by the bumps 61. As shown in FIG. 7, the heat generating element 54 is not sealed with the mold resin and is exposed to the atmosphere. Note that the same reference numerals are given to the same components as those described above with reference to FIG. Therefore, detailed description of these components is omitted.

  Based on FIG. 7, a heat dissipation path of a conventional semiconductor device package heat dissipation mounting structure 60 will be described.

  The heat released from the heat generating element 54 is released to the outside mainly by the two heat dissipation paths 62 and 63, thereby cooling the heat generating element 54.

Heat dissipation path 62: heating element 54 → atmosphere Heat dissipation path 63: heating element 54 → bump 61 → circuit board 52 → thermal ball 51 → mounting board 53 → atmosphere In the heat dissipation mounting structure 60 of the conventional semiconductor element package, the heating element 54 The released heat depends on various factors such as the number, type and size of semiconductor elements, product substrate, wiring length, wiring width, wiring density, number of substrate layers, layer configuration, thickness, and substrate material. Therefore, when using the conventional semiconductor device package heat dissipation mounting structure 60, it is necessary to consider all of the components including the mounting substrate 53.

Such a heat dissipation mounting structure 60 for a semiconductor element package is disclosed in, for example, Patent Document 1.
JP 2004-179257 A (publication date June 24, 2004 (2004. 6.24))

  However, the heat dissipation mounting structure of the semiconductor element package in which the heat sink metal member is attached to the mold resin has the following problems. That is, the mounting volume of the semiconductor element package is increased by attaching the heat sink metal member, and there is a problem that dimensional consistency cannot be obtained with various products that are becoming thinner. Or there was a problem that the attachment structure which attaches the metal member for heat sinks to mold resin was not considered at all. Thus, various problems have arisen by attaching the metal member for heat sink to the mold resin. Furthermore, since the metal member for heat sink is used for cooling a component or the like that may malfunction due to heat generation, there is an inefficient problem that the heat sink metal member must be separately attached to a necessary portion.

  Further, in a miniaturized high mounting type substrate, it is difficult to attach a heat sink metal member to each of the heat generating components.

  In Patent Document 1, the heat generating element and the substrate are connected by a ball bonding connecting portion (ball bonding portion) or a thermal via, thereby efficiently dissipating heat from the heat generating element to the substrate to improve the heat dissipation rate. Yes. However, the amount of heat generation increases as the size and performance of the heat generating elements increase, and the heat dissipation mounting structure of the semiconductor element package using the thermal ball cannot sufficiently dissipate heat from the semiconductor element package to the outside. There was a problem. Further, in a state where the temperature of the entire substrate rises, the heat dissipation is saturated, and there is a problem that the cooling of the semiconductor element package does not proceed. Alternatively, in the heat dissipation mounting structure of the semiconductor element package using the thermal ball, the thermal ball quickly transfers heat to the entire substrate, so that a local temperature rise can be prevented. There was a problem that heat could not be sufficiently released to the outside. Therefore, when a plurality of heating elements are mounted, the temperature of the entire substrate rises due to the heat generated by each heating element. On the other hand, heat dissipation is saturated in the heat dissipation mounting structure of the semiconductor element package using thermal balls. As a result, the heat dissipation efficiency of the entire substrate is reduced.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a semiconductor element package and a mounting substrate that can dissipate heat efficiently and quickly.

  In order to solve the above problems, a semiconductor element package according to the present invention includes a plurality of circuit boards including at least a first circuit board for mounting the semiconductor element and a second circuit board for mounting a thermal ball. A first thermal conductive layer interposed between the plurality of circuit boards and made of a thermally conductive material, and a through hole penetrating the plurality of circuit boards and the first thermal conductive layer is formed, The inner wall of the through hole is covered with a heat conductive material.

  According to the above configuration, the semiconductor element package according to the present embodiment has a heat dissipation mounting structure configured by the through hole, the first heat conductive layer, and the thermal ball. The inner wall of the through hole is covered with a heat conductive material, and the heat conductive material is bonded to the first heat conductive layer and the thermal ball. Thereby, the heat released from the heating element is released from the first heat conductive layer and the thermal ball via the heat conductive material. By providing this heat dissipation mounting structure, heat is released to the outside more efficiently and quickly compared to the conventional heat dissipation mounting structure of the semiconductor element package, which mainly dissipated heat from the thermal ball to the mounting substrate. be able to. Furthermore, since the material covering the inner wall of the through-hole and the first thermal conductive layer are made of Cu or the like having a high thermal conductivity, the thermal conductivity is much higher than that of a substrate material such as polyimide or glass epoxy. Heat can be released to the outside more efficiently and quickly. At the same time, it is possible to prevent heat from being accumulated around the heat generating element, and to reduce the possibility of heat being accumulated in the circuit board and the surrounding portion.

  The semiconductor element package according to the present invention preferably includes a heat radiating plate made of a heat conductive material on the surface of the first circuit board on which the semiconductor element is mounted.

  Furthermore, by providing a heat sink, heat can be transferred from the thermally conductive material covering the inner wall of the through hole to the heat sink, and the heat of the heating element can be released from the heat sink to the atmosphere, further improving the heat dissipation efficiency. it can.

  The semiconductor element package according to the present invention preferably includes a heat sink made of a heat conductive material on a surface of the first circuit board on which the semiconductor element is mounted.

  By providing a heat sink with a large surface area, heat can be transferred from the heat conductive material covering the inner wall of the through hole to the heat sink, and the heat of the heating element can also be released from the heat sink to the atmosphere, and the heat dissipation efficiency can be further improved. . As described above, the heat radiation efficiency can be improved by increasing the contact area of the heat conducting layer with the surrounding air. That is, by providing a heat sink made of Cu or the like having a high thermal conductivity on the upper surface of the circuit board, the contact area of the heat conductive layer with the surrounding air can be increased, and the heat dissipation efficiency can be further improved. Can do.

  In the semiconductor element package according to the present invention, the upper surface of the heat sink is preferably formed lower than the upper surface of the mold resin for sealing the semiconductor element mounted on the first circuit board.

  By forming the upper surface of the heat sink lower than the upper surface of the mold resin, the mounting volume of the semiconductor package can be determined according to the height of the mold resin. It is possible to avoid the problem of an increase in the mounting volume. Further, the mounting height can be reduced as compared with the conventional heat dissipating mounting structure of the semiconductor element package in which the heat sink metal member is attached to the mold resin itself.

  The semiconductor element package according to the present invention can include a heat pipe made of a heat conductive material on a surface on which the semiconductor element is mounted on the first circuit board.

  By providing the heat pipe with good heat transfer efficiency, heat is transferred from the heat conductive material covering the inner wall of the through hole to the heat pipe, and the heat dissipation efficiency can be further improved by radiating heat through the heat pipe.

  In the semiconductor element package according to the present invention, it is preferable that one or more through holes are formed in the heat pipe along the longitudinal direction of the heat pipe.

  By providing one or more through holes in the heat pipe along the longitudinal direction of the heat pipe, the following liquid such as water can be sealed in the through hole.

  In the semiconductor device package according to the present invention, it is preferable that the inside of the through hole is kept in a vacuum and one substance selected from the group consisting of water, alternative chlorofluorocarbon, and ammonia is enclosed.

  Since the lower end portion in the radial direction of the heat pipe and the upper surface of the heat radiating plate are joined, the heat of the circuit board is transmitted to the heat pipe and is radiated to the outside from the heat pipe. Specifically, the heat pipe receives heat from the circuit board, and liquid (water, alternative chlorofluorocarbon, ammonia, etc.) inside the heat pipe is evaporated and vaporized by the heat. And heat is taken in as vaporization heat at the time of vaporization, and after that, it cools in a low temperature part and returns to a liquid. By repeating this, the heat of the circuit board can be continuously cooled.

  In the semiconductor element package according to the present invention, it is preferable that an upper end portion in the radial direction of the heat pipe is lower than an upper surface of a mold resin for sealing the semiconductor element mounted on the first circuit board.

  By forming the upper end of the heat pipe in the radial direction lower than the upper surface of the mold resin, the mounting volume of the semiconductor package can be determined according to the height of the mold resin, and the height of the heat pipe to be attached later Therefore, the problem that the mounting volume of the semiconductor package becomes large can be avoided. Further, the mounting height can be reduced as compared with the conventional heat dissipating mounting structure of the semiconductor element package in which the heat sink metal member is attached to the mold resin itself.

  A mounting substrate according to the present invention includes a plurality of mounting substrates including at least a first mounting substrate for mounting including the semiconductor element package according to the present embodiment, and a second mounting substrate constituting the lowermost layer of the mounting substrate; A second thermal conductive layer that is interposed between the plurality of mounting substrates and is made of a thermally conductive material, a bonding surface between the first mounting substrate and the thermal ball, the second thermal conductive layer, Are connected by a thermally conductive material.

  When a plurality of heat generating elements are mounted on the mounting substrate, the second heat conductive layer is used as an auxiliary heat conductive layer by guiding the heat of the heat generating elements to the second heat conductive layer by the above configuration, and the second heat conductive layer Since the heat exchange with the surrounding air is performed utilizing the wide area of the heat dissipation area, the heat radiation area can be greatly improved. As a result, an extremely high heat dissipation effect can be obtained with respect to the heat released from the heat generating element, and the heat of the heat generating element can be released to the outside more efficiently and quickly. Furthermore, by dissipating heat using a heat sink or a heat pipe, it is possible to provide a heat dissipating mounting structure for a mounting substrate that has a much higher heat dissipating efficiency than conventional heat dissipating mounting structures. Also, with this structure, when the amount of heat generated by each heating element is different, each circuit board is connected to each circuit board via the second heat conductive layer, thermal ball, through hole, first heat conductive layer, heat pipe, and heat sink. Heat can also be transferred, thereby preventing local animal heat. And it can radiate more efficiently by radiating heat from each circuit board using the radiating mounting structure concerning this embodiment.

  As described above, the semiconductor element package according to the present invention includes a plurality of circuit boards including at least a first circuit board for mounting the semiconductor elements and a second circuit board for mounting a thermal ball, and the plurality of the circuit boards. A first thermal conductive layer interposed between the circuit boards and formed of a thermally conductive material, wherein the through holes penetrating the plurality of circuit boards and the first thermal conductive layer are formed. Since the inner wall is covered with the heat conductive material, the heat of the heating element can be efficiently and quickly released to the outside.

(Embodiment 1)
FIG. 1A is an external view of a heat dissipation mounting structure 1 for a semiconductor element package according to the present embodiment, and FIG. In all of the following drawings, the film thicknesses and dimensional ratios of the respective constituent elements are appropriately changed for easy understanding. Needless to say, the present invention is not limited to the following embodiments.

  Based on FIG. 1A, a heat dissipation mounting structure 1 for a semiconductor element package will be described. As shown in FIG. 1A, a heat dissipation mounting structure 1 for a semiconductor element package includes a heating element 2 (semiconductor element), circuit boards 3a to 3c (circuit board), a thermal ball 4 (thermal ball), and a thermal element. Via via heat radiation hole 5 (through hole), first heat conduction layers 6a and 6b (first heat conduction layer), and heat radiation plate 7 (heat radiation plate) are included.

  The rectangular circuit boards 3a to 3c formed of epoxy resin, glass cloth, and wiring material have the same length and width. The rectangular first heat conductive layers 6a and 6b are made of copper (Cu) or the like having high heat conductivity. The first heat conductive layer 6a is laminated between the circuit boards 3a and 3b, and the first heat conductive layer 6b is laminated between the circuit boards 3b and 3c. As shown in FIG. 1A, the circuit board 3a, the first heat conductive layer 6a, the circuit board 3b, the first heat conductive layer 6b, and the circuit board 3c are stacked in this order from the top. A rectangular heating element 2 is mounted at the center of the upper surface of the circuit board 3a located on the uppermost surface. In addition, an electrode (not shown) of the heating element 2 and an electrode (not shown) of the circuit board 3a are directly and electrically connected mechanically by a bump (not shown). An underfill covering the bumps may be disposed in the gap between the semiconductor element 2 and the circuit board 3a.

  Next, the thermal via heat radiating hole 5 will be described with reference to FIG. FIG.1 (c) is the figure which abbreviate | omitted the heat sink 7 from Fig.1 (a).

  As shown in FIG. 1C, a plurality of thermal via heat radiation holes 5 having the same diameter are formed on the upper surface of the circuit board 3a in a region where the heating element 2 and the circuit board 3a do not overlap. . The thermal via heat dissipation holes 5 are formed in two rows parallel to the outer edge of the circuit board 3a, and all the thermal via heat dissipation holes 5 extend from the upper surface of the circuit board 3a to the lower surface of the circuit board 3c. It penetrates perpendicularly to the circuit board 3a. FIG.1 (b) is principal part sectional drawing of the thermal radiation mounting structure 1, and the mode of the penetration is shown. As shown in FIG. 1B, the thermal via heat dissipation hole 5 is formed so that the hole diameter near the upper surface of the circuit board 3a is wider than the hole diameters at other locations.

  As will be described later, the inside of the thermal via radiation hole 5 is covered with a material such as Cu having a high thermal conductivity by sputtering deposition, plating, or a combination thereof. Moreover, even if only the inner wall of the thermal via heat dissipation hole 5 is covered with a material such as Cu having a high thermal conductivity, the entire inside of the thermal via heat dissipation hole 5 is filled with a material such as Cu having a high thermal conductivity. May be. Further, in the present embodiment, the thermal via heat dissipation hole 5 penetrates from the upper surface of the circuit board 3a to the lower surface of the circuit board 3c perpendicularly to the circuit board 3a. There may be penetrated diagonally.

  As shown in FIG. 1A, a heat sink 7 is placed on the upper surface of the circuit board 3a so as to be in direct contact with the atmosphere. The thermal via heat radiation hole 5 and the heat radiation plate 7 are joined to each other. The thermal via heat radiating hole 5 and the heat radiating plate 7 may be joined at the position where the heat radiating plate 7 completely closes the thermal via radiating hole 5, as shown in FIG. Some may be blocked. In this specification, “the thermal via heat radiating hole 5 and the heat radiating plate 7 are joined” means that a material such as Cu having a high thermal conductivity in the thermal via radiating hole 5, Indicates that they are joined. The joining of the thermal via heat radiation hole 5 and other components is the same. In the present embodiment, the thermal via heat dissipation hole 5 and the heat dissipation plate 7 are joined to each other. However, if the heat dissipation plate 7 is disposed at a distance where the heat of the thermal via heat dissipation hole 5 is transmitted, the thermal via The heat radiation hole 5 and the heat radiation plate 7 do not necessarily have to be joined to each other.

  As described above, the thermal via heat dissipation hole 5 penetrates from the upper surface of the circuit board 3a to the lower surface of the circuit board 3c, and on the bottom surface (second main surface) of the circuit board 3c, The ball 4 is joined. Accordingly, the numbers of the thermal via radiation holes 5 and the thermal balls 4 are the same. As described above, the thermal via heat radiation hole 5 is joined to the circuit boards 3 a to 3 c, the first heat conductive layers 6 a and 6 b, the heat radiation plate 7, and the thermal ball 4. In this embodiment, the numbers of the thermal via heat radiation holes 5 and the thermal balls 4 are the same, but the numbers are not necessarily the same, and the number of the thermal balls 4 is the number of the thermal via heat radiation holes 5. There may be more. The diameters of the plurality of thermal via heat radiation holes 5 may be different from each other. Further, as in the present embodiment, the thermal via radiating holes 5 need to be formed in two rows on the upper surface of the circuit board 3a in a region where the heating element 2 and the circuit board 3a do not overlap. Rather, the arrangement can be changed according to the embodiment.

  Next, a method for forming the heat dissipation mounting structure 1 of the semiconductor element package will be described. By this method, it is possible to manufacture a high-layer printed circuit board having the heat dissipation mounting structure 1 and capable of high-density mounting.

  In the method for forming the heat dissipation mounting structure 1 of the semiconductor element package, first, the first heat conductive layer 6b is laminated on the upper surface of the circuit board 3c. And the circuit board 3b is laminated | stacked on the upper surface of the 1st heat conductive layer 6b. Next, the first heat conductive layer 6a is laminated on the upper surface of the circuit board 3b. Subsequently, a circuit board 3a on which a wiring circuit is formed is laminated on the upper surface of the first heat conductive layer 6a. Predetermined positions are drilled in the circuit boards 3a to 3c and the first heat conductive layers 6a and 6b laminated in this manner by a drill or a laser. The inside of the perforated part is covered with a material such as Cu having high thermal conductivity by sputtering deposition, plating, or a combination thereof. In this way, the thermal via heat radiation hole 5 is filled with a material having high thermal conductivity. Alternatively, only the inner wall of the thermal via heat radiation hole 5 may be covered with a material such as Cu having a high thermal conductivity.

  In addition, the hole diameter of the thermal via heat dissipation hole 5 in the vicinity of the upper surface of the circuit board 3a is formed wider than the hole diameter in other places. This is to increase the heat radiation amount from the thermal via heat dissipation hole 5 to the heat dissipation plate 7 by increasing the bonding area between the thermal via heat dissipation hole 5 and the heat dissipation plate 7. However, the hole diameter need not be limited to the above specifications, and may be formed with the same hole diameter.

  Further, in FIG. 1A, the heat dissipation mounting structure 1 includes the heat dissipation plate 7, but a case not including the heat dissipation plate 7 is applied as shown in FIG. 1C depending on the embodiment. Sometimes.

  After the thermal via heat radiating hole 5 is formed by the above method, the heat radiating plate 7 and the thermal via radiating hole 5 are joined. Finally, the thermal via heat dissipation hole 5 and the thermal ball 4 are bonded to the lower surface of the circuit board 3c, and the thermal ball 4 is mounted on the circuit board 3c. By the above method, it is possible to manufacture a high-layer printed circuit board having the heat dissipation mounting structure 1 and capable of high-density mounting.

  Thus, in the multilayer substrate having the heat dissipation mounting structure 1, the circuit boards 3a to 3c and the first heat conductive layers 6a and 6b are laminated, and the heat dissipation plate 7 and the thermal via heat dissipation holes 5 are joined. Although not considered in the present embodiment, when wiring patterns are formed on the circuit boards 3a to 3c and electrical connection therebetween is necessary, the electrical connection is performed through the thermal via heat dissipation holes 5. . Further, as described above, a drill or a laser is generally used as the opening means for the thermal via heat radiation hole 5.

  Based on FIG. 1A, a heat dissipation path by the heat dissipation mounting structure 1 of the semiconductor element package will be described.

  First, when a device having a semiconductor element (heating element 2) is operated, the heating element 2 generates heat. The lower surface of the heating element 2 and the upper surface of the circuit board 3a face each other, and the electrodes are electrically and mechanically connected by bumps. Therefore, there are mainly four types of heat dissipation paths from the heating element 2. The first heat dissipation path is a heat dissipation path that radiates heat directly from the heating element 2 to the atmosphere. In the second to fourth heat dissipation paths, the heat released from the heat generating element 2 is transferred from the heat generating element 2 to the circuit board 3a via the bumps, and the heat is further transmitted from the thermal via heat dissipation hole 5 to the first heat conductive layer 6a. A heat dissipation path (second heat dissipation path) that is transmitted to 6b and discharged from the side surface end surfaces of the first heat conductive layers 6a and 6b to the atmosphere, and from a thermal via heat dissipation hole 5 to a mounting board (not shown) via a thermal ball 4 A heat dissipation path (third heat dissipation path) from which heat is transmitted to the atmosphere from the mounting board, and a heat dissipation path (the first heat dissipation path from the thermal via heat dissipation hole 5 to the heat sink 7 and released from the heat sink 7 to the atmosphere (first) Four heat dissipation paths).

  More specifically, the second to fourth heat radiation paths will be described.

  In the second to fourth heat dissipation paths, first, heat is transmitted from the heating element 2 to the circuit board 3 a via the bumps, and the heat is transmitted to the thermal via heat dissipation hole 5. The inside of the thermal via heat radiation hole 5 is covered with a material such as Cu having high thermal conductivity by sputtering deposition, plating, or a combination thereof. Accordingly, heat is quickly transferred inside the thermal via heat radiation hole 5. That is, the heat transferred from the circuit board 3 a to the thermal via radiating hole 5 is quickly transferred to the first heat conductive layers 6 a and 6 b and the thermal ball 4. Thereafter, heat is transmitted to the side surface end faces of the first heat conductive layers 6a and 6b exposed to the atmosphere, and is radiated from there to the atmosphere (second heat radiation path).

  The third heat radiation path is a heat radiation path through which heat is transmitted from the thermal via heat radiation hole 5 to the thermal ball 4, heat is transmitted from the thermal ball 4 to a mounting board (not shown), and finally heat is radiated from the mounting board to the atmosphere.

  The fourth heat radiation path is a heat radiation path that is transmitted from the thermal via heat radiation hole 5 to the heat radiation plate 7 and radiates heat from the heat radiation plate 7 to the atmosphere.

  Thus, the heat radiation path of the heat released from the heating element 2 is the first heat radiation path that is directly released from the heating element 2 to the atmosphere, and the second heat radiation path that is released from the first heat conductive layers 6a and 6b to the atmosphere. There are four heat dissipation paths: a heat dissipation path, a third heat dissipation path released from the mounting board to the atmosphere, and a fourth heat dissipation path released from the heat sink 7 to the atmosphere.

  Based on FIG. 1A, the heat dissipation effect by the heat dissipation mounting structure 1 of the semiconductor element package will be described.

  In the semiconductor device package heat dissipation mounting structure 1 according to the present embodiment, the thermal via heat dissipation hole 5 penetrates from the upper surface of the circuit board 3a to the lower surface of the circuit board 3c perpendicularly to the circuit board 3a. The inside of the thermal via radiation hole 5 is filled with Cu or the like having high thermal conductivity, and is joined to the circuit boards 3a to 3c and the first thermal conductive layers 6a and 6b. Further, the thermal via heat radiation hole 5 and the thermal ball 4 are joined on the lower surface of the circuit board 3c. That is, when the thermal via heat dissipation hole 5 is joined to the first thermal conductive layers 6a and 6b and the thermal ball 4, in the heat dissipation mounting structure 1 of the semiconductor element package, the heat released from the heating element 2 is efficiently obtained. And it is discharged to the outside promptly. Thus, by applying the heat dissipation mounting structure 1, it is possible to prevent heat from being accumulated around the heating element 2.

  Further, a heat sink 7 is placed on the upper surface of the circuit board 3a so as to be in direct contact with the atmosphere, and the heat sink 7 is made of Cu having high thermal conductivity. The thermal via heat radiation hole 5 and the heat radiating plate 7 are joined. For this reason, the heat released from the heat generating element 2 is quickly transmitted to the heat radiating plate 7 through the thermal via heat radiating hole 5 and efficiently radiated from the heat radiating plate 7 to the atmosphere. As described above, since there is a heat radiation path for radiating heat from the heat radiating plate 7 to the atmosphere, the heat radiation mounting structure 1 can further enhance the heat radiation efficiency.

As described above, the heat dissipation mounting structure 1 for the semiconductor element package performs heat dissipation via the thermal via heat dissipation holes 5, the first heat conductive layers 6a and 6b, the heat dissipation plate 7, and the thermal balls 4, so that the conventional semiconductor element package is provided. Compared with the heat dissipation mounting structure, the heat of the heat generating element 2 can be efficiently and rapidly released to the outside of the circuit board 3. Accordingly, it is possible to reduce the possibility that the heat released from the heat generating element 2 is accumulated on the circuit boards 3a to 3c and the surrounding portions.
(Embodiment 2)
FIG. 2 is an external view of another heat dissipation mounting structure 10 of the semiconductor element package according to the present embodiment. Based on FIG. 2, the heat dissipation mounting structure 10 of the semiconductor element package will be described. As shown in FIG. 2, a mold resin 11 is placed on the upper surface of the circuit board 3 a, and a heating element (not shown) is sealed inside the mold resin 11. The heating element and the circuit board 3a are electrically connected by a wire (not shown), and the wire is also sealed inside the mold resin 11. In addition, the same referential mark is attached | subjected to the component same as the component mentioned above with reference to FIG. 1 (a), (b). Therefore, detailed description of these components is omitted.

  Based on FIG. 2, the heat dissipation path by the heat dissipation mounting structure 10 of the semiconductor element package will be described.

  First, when a device having a semiconductor element (heating element) is operated, the heating element generates heat. Since the heat generating element is sealed with the mold resin 11, there are mainly four heat dissipation paths from the heat generating element. That is, the first heat dissipation path is a heat dissipation path in which heat is transferred from the heat generating element to the mold resin 11 and directly radiated from the mold resin 11 to the atmosphere. In the second to fourth heat dissipation paths, the heat released from the heat generating element is dissipated from the heat generating element to the circuit board 3a through the mold resin 11, and the heat is transmitted to the thermal via heat dissipation hole 5, so that the thermal via heat dissipation hole 5 A heat dissipation path (second heat dissipation path) that dissipates heat from the side surface end faces of the first heat conductive layers 6a and 6b via the heat, heat is transferred from the thermal via heat dissipation hole 5 to the thermal ball 4, and the mounting board (not shown) from the thermal ball 4 The heat is transferred to the heat sink, and the heat dissipation path (third heat dissipation path) is dissipated from the mounting board, and the heat is transferred from the thermal via heat dissipating hole 5 to the heat dissipating plate 7 and is dissipated from the heat dissipating plate 7 to the atmosphere (fourth heat dissipating path). Heat dissipation path).

The first heat dissipation path according to the heat dissipation mounting structure 1 of the semiconductor element package and the first heat dissipation path according to the heat dissipation mounting structure 10 of the semiconductor element package described above with reference to FIG. The only difference is whether the heat released from the heat is directly radiated from the heating element to the atmosphere or radiated to the atmosphere via the mold resin 11. In addition, the second to fourth heat dissipation paths related to the heat dissipation mounting structure 1 of the semiconductor element package and the second to fourth heat dissipation paths related to the heat dissipation mounting structure 10 of the semiconductor element package include heat released from the heat generating elements, The only difference is whether heat is radiated to the circuit board 3a through bumps or underfill, or heat is radiated to the circuit board 3a through the back surface of the heating element connected to the circuit board 3a, or through the mold resin 11. It is. Therefore, the detailed description about the 1st-4th heat dissipation path | route which concerns on the heat dissipation mounting structure 10 of a semiconductor element package, and the detailed description about the heat dissipation effect by the heat dissipation mounting structure 10 of a semiconductor element package are abbreviate | omitted.
(Embodiment 3)
FIG. 3 is an external view of a heat dissipation mounting structure 20 of another semiconductor element package according to the present embodiment. Based on FIG. 3, the heat dissipation mounting structure 20 of the semiconductor element package will be described. As shown in FIG. 3, in the heat dissipation mounting structure 20 for a semiconductor element package, a cylindrical heat pipe 21 is placed on the upper surface of the heat dissipation plate 7 so as to lie. More specifically, the heat pipe 21 is placed on the upper surface of the circuit board 3 a so as to surround the mold resin 11, and occupies most of the region where the circuit board 3 a and the mold resin 11 do not overlap. Is placed. The heat pipe 21 is formed of a material having high thermal conductivity such as Cu. As shown in the cross sections 22 and 23, a plurality of through holes are formed inside. The through hole is formed in a state where it communicates with the longitudinal direction of the heat pipe 21. Therefore, the number of through holes shown in the cross section 22 and the cross section 23 and the position in the cross section are the same. The inside of the through hole is kept in a vacuum, and water or alternative chlorofluorocarbon is enclosed.

  Further, the upper end portion of the heat pipe 21 in the radial direction is installed to be lower than the upper surface of the mold resin 11. In addition, the same referential mark is attached | subjected to the component same as the component mentioned above with reference to FIG. 1 (a), (b) and FIG. Therefore, detailed description of these components is omitted. In addition, the through-hole formed in the heat pipe 21 may be plural or single. Further, in FIG. 3, the heat pipe 21 is placed on the upper surface of the heat radiating plate 7, but it may be placed directly on the upper surface of the thermal via heat radiating hole 5 or the circuit board 3a without being placed on the heat radiating plate 7. it can. Moreover, the heat pipe 21 does not necessarily have a cylindrical shape, and may have a shape such as a rectangular parallelepiped shape.

  Based on FIG. 3, the heat dissipation path by the heat dissipation mounting structure 20 of the semiconductor element package will be described.

  The semiconductor device package heat dissipation mounting structure 20 has the four heat dissipation paths described with respect to the semiconductor element package heat dissipation mounting structure 10, and further has a fifth heat dissipation path. That is, the fifth heat radiation path is such that the lower end portion of the heat pipe 21 in the radial direction and the upper surface of the heat radiation plate 7 are joined, so that the heat of the heat radiation plate 7 is transmitted to the heat pipe 21 and from the heat pipe 21 to the outside. It is a route to dissipate heat. Specifically, the heat pipe 21 receives heat from the heat radiating plate 7, and the liquid (water, alternative chlorofluorocarbon, etc.) inside the heat pipe 21 is evaporated and vaporized by the heat. And heat is taken in as the heat of vaporization at the time of vaporization, and after that, it cools in the low temperature part which is not illustrated and returns to a liquid. By repeating this, the heat of the heat sink 7 is continuously cooled. In FIG. 3, the heat pipe 21 extends from the position indicated by the cross sections 22 and 23 toward a low temperature portion (not shown), and the liquid (water, alternative chlorofluorocarbon, etc.) inside the heat pipe 21 is transferred to the low temperature portion and the heat pipe. It is the structure which circulates in the inside of 21. However, the position of the heat pipe 21 toward the low temperature portion is not limited to the position indicated by the cross sections 22 and 23, and can be changed to other positions as a matter of course.

  The detailed description of the other heat dissipation path related to the heat dissipation mounting structure 20 of the semiconductor element package is the same as the heat dissipation path related to the heat dissipation mounting structure 10 of the semiconductor element package described above with reference to FIGS. Therefore, detailed description of these heat radiation paths is omitted.

  Based on FIG. 3, the heat dissipation effect by the heat dissipation mounting structure 20 of the semiconductor element package will be described.

  In the heat dissipation mounting structure 20 of the semiconductor element package according to the present embodiment, the heat pipe 21 formed of a material having high thermal conductivity such as Cu and the heat dissipation plate 7 are joined. The heat is transferred to the heat pipe 21 and the heat is released from the heat pipe 21 through the heat dissipation path. Therefore, the heat dissipation mounting structure 20 of the semiconductor element package can release heat to the outside more efficiently and quickly than the heat dissipation mounting structures 1 and 10 of the semiconductor element package without the heat pipe 21. The possibility of accumulating heat in 3a to 3c and the surrounding portions can be reduced. Thus, by joining the heat pipe 21 to the heat sink 7, the heat dissipation of the semiconductor element package can be further enhanced.

In the heat dissipation mounting structure 20 of the semiconductor element package, the heating element is sealed with the mold resin 11, but the height of the upper end portion in the radial direction of the heat pipe 21 may be formed lower than the height of the mold resin 11. preferable. Thereby, the mounting volume can be reduced as compared with the conventional heat dissipation mounting structure of the semiconductor element package in which the metal member for heat sink is attached to the mold resin 11 itself. Thus, by using the heat pipe 21, it is possible to realize a heat dissipation mounting structure of the semiconductor element package with further improved heat exchange efficiency, and to reduce the mounting volume compared to the heat dissipation mounting structure of the conventional semiconductor element package. it can.
(Embodiment 4)
FIG. 4 is an external view of a heat dissipation mounting structure 30 of another semiconductor element package according to the present embodiment. Based on FIG. 4, the heat dissipation mounting structure 30 of the semiconductor element package will be described. As shown in FIG. 4, the heat dissipation mounting structure 30 of the semiconductor element package is formed on the upper surface of the circuit board 3 a in a region where the mold resin 11 and the circuit board 3 a do not overlap each other with Cu having high thermal conductivity. The formed heat sink 31 is attached. The height of the upper surface of the heat sink 31 is slightly lower than the height of the upper surface of the mold resin 11, and the length and width of the heat sink 31 are the same as the length and width of the circuit board 3a. The heat sink 31 is bonded to the circuit board 3 a and the thermal via heat dissipation hole 5. In the present embodiment, the length and width of the heat sink 31 are the same as the length and width of the circuit board 3a, but they are not necessarily the same.

  Based on FIG. 4, a heat dissipation path by the heat dissipation mounting structure 30 of the semiconductor element package will be described.

  The heat dissipation mounting structure 30 of the semiconductor element package has the same three heat dissipation paths as the first to third heat dissipation paths of the heat dissipation mounting structure 10 of the semiconductor element package, but further has another heat dissipation path. That is, since the bottom surface of the heat sink 31 is joined to the circuit board 3a and the thermal via heat dissipation hole 5, the heat of the circuit board 3a and the thermal via heat dissipation hole 5 is transmitted to the heat sink 31, and the heat is transmitted from the surface of the heat sink 31. Released into the atmosphere. The first to third heat dissipation paths related to the semiconductor element package heat dissipation mounting structure 30 will be described in the semiconductor element package heat dissipation mounting structure 10 described above with reference to FIGS. The first to third heat dissipation paths are the same. Therefore, detailed description of these heat radiation paths is omitted.

  Based on FIG. 4, the heat dissipation effect by the heat dissipation mounting structure 30 of the semiconductor element package will be described.

  In the semiconductor device package heat dissipation mounting structure 30 according to the present embodiment, the heat sink 31 formed of a material having high thermal conductivity such as Cu, the circuit board 3a, and the thermal via heat dissipation hole 5 are joined. The heat of the substrate 3a and the thermal via radiating hole 5 is transmitted to the heat sink 31, and the heat is directly released from the heat sink 31 to the atmosphere. By attaching the heat sink 31, the surface area of the heat radiation plate 7 and the portion of the heat sink 31 exposed to the atmosphere is significantly larger than the surface area of the heat radiation plate 7 when only the heat radiation plate 7 is exposed to the atmosphere. Accordingly, the heat dissipation mounting structure 30 of the semiconductor element package can release heat to the outside more efficiently and quickly than the heat dissipation mounting structures 1 and 10 of the semiconductor element package that do not have the heat sink 31, and the circuit board 3a. ~ 3c and the risk of accumulating heat in the surrounding area can be reduced. Thus, by joining the heat sink 31 to the circuit board 3a and the thermal via heat dissipation hole 5, the heat dissipation of the circuit board on which the semiconductor element is mounted can be further enhanced.

In the heat dissipation mounting structure 30 of the semiconductor element package, the heat generating element is sealed with the mold resin 11, but it is preferable that the height of the upper surface of the heat sink 31 is lower than the height of the upper surface of the mold resin 11. As a result, the mounting volume can be reduced compared to the conventional heat dissipating mounting structure of the semiconductor element package in which the heat sink metal member is attached to the mold resin 11 itself. As described above, by using the heat sink 31, it is possible to realize a heat dissipation mounting structure of the semiconductor element package with further improved heat exchange efficiency, and it is possible to reduce the mounting volume compared to the heat dissipation mounting structure of the conventional semiconductor element package. .
(Embodiment 5)
FIG. 5 is an external view of the mounting board heat dissipating mounting structure 40 according to the present embodiment. Based on FIG. 5, the heat dissipation mounting structure 40 of the mounting substrate will be described.

  The heat dissipation mounting structure of the semiconductor element package according to the first to fourth embodiments relates to the heat dissipation mounting structure of the semiconductor element package on which one semiconductor element (heat generating element) is mounted. However, normally, a plurality of heating elements are mixedly mounted on the mounting board. Therefore, as a matter of course, the heat radiation efficiency varies depending on the number of heating elements to be mounted. The mounting substrate heat dissipating mounting structure 40 according to the fifth embodiment is a mounting substrate heat dissipating mounting structure suitable for a semiconductor element package in which a plurality of heating elements are mounted.

  As shown in FIG. 5, the semiconductor element package 45 and the semiconductor element package 46 are mounted on the upper surface of the mounting substrate 41. The semiconductor element package 45 has a heat dissipation mounting structure 30 for the semiconductor element package. The semiconductor element package 46 has a conventional heat dissipation mounting structure 50 for a semiconductor element package.

  The mounting substrate 41 includes a substrate 41a (first mounting substrate), a substrate 41c (second mounting substrate), and a second heat conductive layer 41b (second heat conductive layer). And the 2nd heat conductive layer 41b is laminated | stacked between the board | substrate 41a and the board | substrate 41c. The substrate 41a, the second heat conductive layer 41b, and the substrate 41c are each rectangular and have the same length and width. A plurality of thermal balls 4 are mounted on the bottom surface of the circuit board 3 c of the semiconductor element package 45 and the bottom surface of the circuit board 52 of the semiconductor element package 46, and the thermal balls 4 are also bonded to the mounting substrate 41. That is, the semiconductor element packages 45 and 46 are mounted on the upper surface of the mounting substrate 41 via the thermal balls 4.

  A joint surface between the mounting substrate 41a and the thermal ball 4 is formed of a heat conductive material, like the second heat conductive layer 41b. And the heat conductive part 42 enclosed by the area | region which opposes the joint surface and the joint surface in the 2nd heat conductive layer 41b is also formed of the heat conductive material.

  In the present embodiment, the second heat conductive layer is only one layer indicated by 41b, but there may be two or more layers.

  Based on FIG. 5, the heat dissipation path by the heat dissipation mounting structure 40 of the mounting substrate will be described. The first to fourth heat dissipation paths related to the semiconductor element package heat dissipation mounting structure 30 described above with reference to FIG. 4 and the heat dissipation path related to the heat dissipation mounting structure 50 of the semiconductor element package described above with reference to FIG. Description is omitted.

  As shown in FIG. 5, the heat dissipation mounting structure 40 of the mounting board has a heat dissipation path 47 that conducts heat from the thermal ball 4 to the second heat conductive layer 41 b through the heat conductive portion 42. Therefore, the heat of the heat generating element 2 mounted on the semiconductor element package 45/46 is transmitted to the second heat conductive layer 41b through the heat dissipation path 47. The second heat conductive layer 41b is open to the atmosphere on the side surface of the mounting substrate 41, and the heat transmitted to the second heat conductive layer 41b is released to the atmosphere from the side surface of the second heat conductive layer 41b.

  Based on FIG. 5, the heat dissipation effect by the heat dissipation mounting structure 40 of the mounting substrate will be described.

  In the heat dissipation mounting structure 40 for a mounting substrate according to the present embodiment, the heat conducting portion 42 and the second heat conducting layer 41b are formed of a material having high heat conductivity. The semiconductor element packages 45 and 46 are connected to the heat conductive portion 42 and the second heat conductive layer 41 b by a plurality of thermal balls 4. Therefore, the heat dissipation mounting structure 40 of the mounting board having the heat dissipation path 47 can transmit the heat released from the plurality of heat generating elements 2 to the second heat conductive layer 41b through the thermal ball 4. As a result, the heat released from the plurality of heating elements 2 can be efficiently and quickly released from the second heat conductive layer 41b to the atmosphere. Thereby, it is possible to prevent heat from being accumulated around the plurality of heat generating elements 2, and to reduce the possibility of heat being accumulated in the circuit boards 3a to 3c and the surrounding portions.

  In this way, the second heat conduction layer 41b is used as an auxiliary heat conduction layer, and the heat radiation area is greatly improved by utilizing the wide area of the second heat conduction layer 41b to exchange heat with the surrounding air. Can do. As a result, an extremely high heat dissipation effect can be obtained with respect to the heat released from the heating element 2.

  Further, in the case of this structure, when the heat generation amount differs for each heating element 2, the second heat conductive layer 41b, the thermal ball 4, the thermal via heat radiation hole 5, the first heat conductive layer 6a, the heat sink 31, or not shown. Heat can be evenly transferred to each circuit board via the heat pipe, thereby preventing local animal heat. And it can thermally radiate more efficiently by thermally radiating from each circuit board using the radiation mounting structure concerning Embodiment 1-4.

  The present invention relates to a semiconductor element or a semiconductor element package on which a mold resin for sealing the semiconductor element is mounted, and a mounting substrate on which the semiconductor element package is mounted. More specifically, the present invention can be applied to the heat dissipation mounting structure of the semiconductor element package and the heat dissipation mounting structure of the mounting substrate.

(A) is an external view of the heat dissipation mounting structure of the semiconductor element package according to the present embodiment, (b) is a cross-sectional view of the main part of the heat dissipation mounting structure of the semiconductor element package, (c) It is an external view of the heat dissipation mounting structure of the semiconductor element package which abbreviate | omitted the heat sink from (a). It is an external view of the thermal radiation mounting structure of the other semiconductor element package which concerns on this Embodiment. It is an external view of the thermal radiation mounting structure of the other semiconductor element package which concerns on this Embodiment. It is an external view of the thermal radiation mounting structure of the other semiconductor element package which concerns on this Embodiment. It is an external view of the heat dissipation mounting structure of the mounting board which concerns on this Embodiment. It is sectional drawing which concerns on the thermal radiation mounting structure of the conventional semiconductor element package with which the heat generating element was sealed by mold resin. It is sectional drawing which concerns on the heat dissipation mounting structure of the conventional semiconductor element package by a flip-chip system.

Explanation of symbols

1 Semiconductor Device Package Heat Dissipation Mounting Structure 2 Heating Element (Semiconductor Element)
3 Circuit board 3a Circuit board (first circuit board)
3b circuit board 3c circuit board (second circuit board)
4 Thermal ball 5 Thermal via heat dissipation hole (through hole)
6a, 6b 1st heat conductive layer 7 heat sink 10 heat dissipation mounting structure of semiconductor element package 11 mold resin 20 heat dissipation mounting structure of semiconductor element package 21 heat pipe 22, 23 cross section 30 heat dissipation mounting structure of semiconductor element package 31 heat sink 40 mounting substrate Heat dissipation mounting structure 41 mounting substrate 41a mounting substrate (first mounting substrate)
41c Substrate substrate (second mounting substrate)
41b Second heat conduction layer 42 Heat conduction portion 45, 46 Semiconductor element package 47 Heat radiation path 50 Heat radiation mounting structure of semiconductor element package 51 Thermal ball 52 Circuit board 53 Mounting board 54 Heating element 55 Mold resin 56 Wire 57, 58 Heat radiation path 60 Semiconductor device package heat dissipation mounting structure 61 Bump 62, 63 Heat dissipation path

Claims (9)

A semiconductor device package used for a semiconductor device,
A plurality of circuit boards including at least a first circuit board for mounting the semiconductor element and a second circuit board for mounting a thermal ball;
A first thermally conductive layer interposed between the plurality of circuit boards and configured by a thermally conductive material;
A through-hole penetrating the plurality of circuit boards and the first thermal conductive layer is formed,
A semiconductor element package, wherein an inner wall of the through hole is covered with a heat conductive material.   The semiconductor element package according to claim 1, further comprising: a heat sink made of a heat conductive material on a surface of the first circuit board on which the semiconductor element is mounted.   2. The semiconductor device package according to claim 1, further comprising a heat sink made of a heat conductive material on a surface of the first circuit board on which the semiconductor device is mounted.   4. The semiconductor element package according to claim 3, wherein an upper surface of a mold resin for sealing the semiconductor element mounted on the first circuit board is higher than an upper surface of the heat sink.   The semiconductor element package according to claim 1, further comprising a heat pipe made of a heat conductive material on a surface of the first circuit board on which the semiconductor element is mounted.   6. The semiconductor element package according to claim 5, wherein one or more through holes are formed in the heat pipe along the longitudinal direction of the heat pipe.   7. The semiconductor device package according to claim 6, wherein the inside of the through hole is kept in a vacuum and is filled with one substance selected from the group consisting of water, alternative chlorofluorocarbon, and ammonia.   6. The semiconductor element package according to claim 5, wherein an upper end portion in the radial direction of the heat pipe is lower than an upper surface of a mold resin for sealing the semiconductor element mounted on the first circuit board. A mounting substrate including the semiconductor element package according to any one of claims 1 to 8,
The mounting substrate includes a plurality of mounting substrates including at least a first mounting substrate for mounting the semiconductor element package via the thermal ball, and a second mounting substrate that forms a lowermost layer of the mounting substrate;
A second thermally conductive layer interposed between the plurality of mounting substrates and configured by a thermally conductive material;
A mounting substrate, wherein a bonding surface between the first mounting substrate and the thermal ball and the second heat conductive layer are connected by a heat conductive material.

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