JP2009194360A - Method for preventing peeling of deposited film on substrate holder in thin film forming apparatus and thin film forming apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a technology to solve the problem of a film and the like deposited on a substrate holder. <P>SOLUTION: A film-exfoliation preventing chamber 710 in a thin-film manufacturing apparatus is hermetically connected to an unloadlock chamber 2 and a loadlock chamber 1 on a return transfer channel between the unloadlock chamber 2 to retrieve a deposited substrate 9 from the substrate holder 90 and the loadlock chamber 1 to mount an undeposited substrate 9 on the substrate holder 90. In the film-exfoliation chamber 710, a film-coating member is formed for coating the film on the surface of the deposited film in the substrate holder 90 and a holding claw 91. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a thin film forming apparatus for forming a predetermined thin film on the surface of a substrate, and more particularly to removing and coating a film deposited on the surface of a substrate holder for holding the substrate in such an apparatus. Is.

  Thin film forming apparatuses for forming a predetermined thin film on the surface of a substrate are actively used in the manufacture of semiconductor devices such as LSIs, display devices such as liquid crystal displays, and information recording disks such as hard disks. Such a thin film forming apparatus includes a substrate holder having a specific configuration in order to hold a substrate at a predetermined position in a film forming chamber in which a film is formed. The thin film should originally be deposited only on the substrate, but the particles on which the thin film is deposited adhere not only to the surface of the substrate but also to the substrate holder. Some thin films are highly stressed, and as they are deposited thickly on the substrate holder, peeling occurs, causing problems such as deteriorating the quality of substrate processing.

  In such a case, the peeled deposited film is scattered as particles of a certain size (hereinafter referred to as “particles”). When these particles adhere to the surface of the substrate, a local film thickness abnormality occurs. Local thickness anomalies tend to cause defects such as sector failures in the case of an information recording disk such as a hard disk.

  In recent years, methods and apparatuses for removing a deposited film before the film deposited on the substrate holder is peeled have been proposed (Patent Documents 1 and 2).

  Patent Document 1 discloses a film forming apparatus that forms a predetermined thin film on the surface of a substrate while holding the substrate by a substrate holder in a vacuum film forming chamber. The film forming apparatus is characterized in that the deposited film on the surface of the substrate holder is removed in a vacuum chamber that is airtightly connected to the film forming chamber without taking the substrate holder into the atmosphere.

  Patent Document 2 discloses a load lock chamber that temporarily stores a substrate when an undeposited substrate is carried into a deposition chamber that creates a thin film on the surface of the substrate, and a temporary when a substrate that has been deposited is taken out. Discloses a thin film forming apparatus in which an unload lock chamber for storing a substrate is hermetically connected so as to communicate with a vacuum. The thin film forming apparatus further includes a moving mechanism for moving the substrate holder holding the substrate in the order of the load lock chamber, the film formation chamber, and the unload lock chamber. The thin film forming apparatus has a return movement path for returning the substrate holder to the load lock chamber after collecting the substrate in the unload lock chamber, and has a film removal mechanism for removing the film deposited on the surface of the substrate holder. It is provided on the return movement path.

JP 2000-273615 A JP 2001-156158 A

  However, in recent information recording disks, the inter-sector distance is becoming narrower in order to improve the recording density. For this reason, even a slight film thickness abnormality (for example, formation of protrusions) tends to cause a recording error, and the management of particles is becoming more strict.

In addition, in an apparatus for forming a film around a substrate holder, throughput is improved, so that it is required to further shorten the time (tact time) for staying in one processing chamber and performing processing.
However, it is difficult to completely remove the film deposited on the surface of the substrate holder using the above-described conventional apparatus while satisfying the demand for shortening the tact time. If the deposited film is not removed and remains on the substrate holder, the remaining film is peeled off to generate particles, which adversely affects the performance of the manufactured information recording disk or the like. In particular, when a carbon protective film is deposited on the substrate holder, the carbon protective film has a high stress and is liable to be peeled off.

  The invention of the present application has been made to solve such a problem, and it is intended to realize a method and apparatus for more effectively solving the problem of particles caused by peeling of a film deposited on a substrate holder. Objective.

  In order to solve the above-described problem, a method for preventing peeling of a film deposited on a substrate holder according to an embodiment of the present invention includes a film formation chamber for forming a predetermined thin film on a substrate in a vacuum, and a substrate. The substrate holder and the film formation chamber are connected to the film formation chamber in an airtight manner. Before the undeposited substrate is carried into the film formation chamber, the load lock chamber for mounting the non-film formation substrate on the substrate holder and the film formation chamber are airtight An unload lock chamber that takes out a substrate holder on which a substrate that has been formed and mounted a film is mounted from the film formation chamber and collects the substrate from the substrate holder, a moving means that moves the substrate holder, and an unload lock chamber In a thin film forming apparatus having a return movement path for returning the substrate holder from which the deposited substrate has been collected to the load lock chamberThe method includes a step of coating a film deposited on the substrate holder with a coating material on the return movement path.

  The coating step is performed in a vacuum state in an unload lock chamber and a film peeling prevention chamber that is airtightly connected between the load lock chamber and the return lock path.

  The coating step may include a step of coating a film deposited on the substrate holder with the coating material by sputtering a target of the coating material.

  The thickness of the film coated by the coating step can be preferably 1 nm or more. The substrate is an information recording disk substrate, for example.

  Furthermore, in this invention, a board | substrate holder can be comprised so that it may consist of a board | substrate holder main body and the holding nail | claw arrange | positioned at the periphery of the said board | substrate holder main body. In this case, the coating step includes a step of coating a film deposited on the surfaces of the holding claws and the substrate holder body.

  A method for preventing peeling of a film deposited on a substrate holder according to another embodiment of the present invention includes a film formation chamber for forming a predetermined thin film on a substrate in a vacuum, a substrate holder for holding a substrate, A film is connected to the film chamber in an airtight manner, and before the undeposited substrate is carried into the film formation chamber, the load lock chamber for mounting the undeposited substrate on the substrate holder and the film formation chamber are airtightly connected to the film formation chamber. The substrate holder on which the substrate is mounted is taken out of the film formation chamber and the substrate is recovered from the substrate holder, the moving means for moving the substrate holder, and the substrate that has been formed in the unload lock chamber Is performed in a thin film forming apparatus having a return movement path for returning the recovered substrate holder to the load lock chamber. The method includes a step of removing the film deposited on the substrate holder on the return movement path, and a step of coating the film deposited on the substrate holder with a coating material.

  The step of removing the film and the step of coating are performed in a vacuum state in an unload lock chamber and a film peeling prevention chamber that is hermetically connected between the load lock chamber and provided on the return movement path.

  The coating step may include a step of coating a film deposited on the substrate holder with the coating material by sputtering a target of the coating material.

  Furthermore, the substrate holder can be configured to include a substrate holder body and a holding claw disposed on the periphery of the substrate holder. In this case, the step of removing the film and the step of coating are the steps of removing the film deposited on the surfaces of the holding claws and the substrate holder main body, and then coating the film remaining on the surfaces of the holding claws and the substrate holder main body. The process of carrying out is included.

  In the method of the present invention according to each of the embodiments described above, the coating material is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, It can be selected from a group including Pt, Cu, Ag, Au, Al, Ga, and In. The thickness of the film coated by the coating step can be preferably 1 nm or more. The substrate is an information recording disk substrate, for example.

  In order to solve the above problems, an apparatus for forming a thin film according to an embodiment of the present invention includes a film forming chamber for forming a predetermined thin film on a substrate in a vacuum, a substrate holder for holding the substrate, and an airtight in the film forming chamber. A load lock chamber that mounts the undeposited substrate on the substrate holder before loading the undeposited substrate into the deposition chamber, and an airtightly connected and deposited substrate on the deposition chamber The unloaded lock chamber for removing the substrate holder from the deposition chamber and collecting the substrate from the substrate holder, the moving means for moving the substrate holder, and the deposited substrate in the unloaded lock chamber were collected. And a return movement path for returning the substrate holder to the load lock chamber. The moving means moves the substrate holder on which the substrate is mounted in the order of the load lock chamber, the film forming chamber, and the unload lock chamber, and coats the film deposited on the substrate holder with the coating material on the return movement path. A film coating means is provided.

  A film peeling prevention chamber having a film coating means may be provided on the return movement path. In this configuration, the film deposited on the substrate holder can be coated in a vacuum, and the film peeling prevention chamber is hermetically connected between the unload lock chamber and the load lock chamber.

  The film coating means is configured to coat the film deposited on the substrate holder with the coating material by sputtering a target of the coating material.

  The said board | substrate holder can be comprised so that it may consist of a board | substrate holder main body and the holding nail | claw arrange | positioned at the periphery of a board | substrate holder main body. In this case, the film coating means coats the film deposited on the surfaces of the holding claws and the substrate holder body.

  A thin film forming apparatus according to another embodiment of the present invention includes a film forming chamber for forming a predetermined thin film on a substrate in a vacuum, a substrate holder for holding the substrate, and a film forming chamber that is airtightly connected to the film forming chamber. Before loading the substrate into the deposition chamber, a load lock chamber for mounting the undeposited substrate on the substrate holder and a substrate holder on which the deposited substrate is mounted are connected to the deposition chamber. An unload lock chamber for taking out the substrate from the film chamber and collecting the substrate from the substrate holder, a moving means for moving the substrate holder, and a load lock for the substrate holder from which the deposited substrate is collected in the unload lock chamber. And a return movement path for returning to the chamber. In this thin film forming apparatus, the moving means moves the substrate holder on which the substrate is mounted in the order of the load lock chamber, the film forming chamber, and the unload lock chamber, and deposits on the substrate holder on the return movement path. A film removing means for removing the film and a film coating means for coating the film remaining on the substrate holder with a coating material are provided.

  A film peeling prevention chamber having a film removing means and a film coating means may be provided on the return movement path. In this configuration, the film deposited on the substrate holder can be removed and the film coating on the film remaining on the substrate holder can be performed in a vacuum. The film peeling prevention chamber includes an unload lock chamber and a load lock. An airtight connection is made between the chambers.

  The film coating means is configured to coat the film deposited on the substrate holder with the coating material by sputtering a target of the coating material.

  Furthermore, the substrate holder can be configured to include a substrate holder body and a holding claw disposed on the periphery of the substrate holder body. In this configuration, the film removing unit and the film coating unit remove the film deposited on the surfaces of the holding claws and the substrate holder body, and then coat the film remaining on the surfaces of the holding claws and the substrate holder body.

  In the thin film forming apparatus according to each of the embodiments described above, the coating material is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt. , Cu, Ag, Au, Al, Ga, In can be selected.

  The thickness of the film coated by the film coating means is preferably 1 nm or more. The substrate is an information recording disk substrate, for example.

  According to the present invention, the film deposited on the substrate holder (especially the carbon protective film having high stress and easy to peel off) is removed, and further, the coating with the film having good adhesion and hardly peeled off is performed. Can do. Thereby, problems such as generation of particles due to peeling of the film deposited on the substrate holder can be solved.

  In addition, since the film removing means and the film coating means are hermetically connected so that a vacuum is communicated on the return movement path from the unload lock chamber to the load lock chamber, the substrate holder is taken out to the atmosphere side. In addition, a deposited film such as a carbon protective film that easily peels off can be removed from the substrate holder. Furthermore, even if the deposited film remains slightly on the substrate holder, the film can be coated on the remaining film with a film having good adhesion and hardly causing peeling. Therefore, contaminants in the atmosphere are not brought into the apparatus through the substrate holder. For this reason, contamination of the substrate and the thin film to be produced is suppressed.

  Embodiments of the present invention will be described below. In particular, an example in which the present invention is applied to a thin film forming apparatus for manufacturing an information recording disk will be described in detail. However, the present invention is not limited to such an embodiment, and can be applied to thin film forming apparatuses for various other purposes.

  FIG. 1 is a plan view showing a schematic configuration of a thin film forming apparatus according to the first embodiment of the present invention. In the apparatus of the present embodiment, a plurality of vacuum chambers 1, 2, 4, 31-34, 50-54 and 500 are arranged in series along a rectangular outline. Each vacuum chamber is a vacuum vessel that is evacuated by a dedicated or dual-purpose exhaust system. A gate valve 10 is disposed at the boundary of each vacuum chamber. The substrate 9 is transported while being held by the substrate holder 90. A rectangular moving path 80 is installed along a plurality of serially arranged vacuum chambers, and moving means for moving the substrate holder 90 along the moving path 80 is provided. The substrate holder 90 is transported in each chamber by the moving means while holding the substrate 9.

  Among the plurality of vacuum chambers, two vacuum chambers arranged on one side of the square have a load lock chamber 1 for mounting the substrate 9 on the substrate holder 90 and an uncover for recovering the substrate 9 from the substrate holder 90. Load lock chamber 2 is provided. A portion of the rectangular moving path 80 between the load lock chamber 1 and the unload lock chamber 2 is a return moving path for returning the substrate holder 90 from the unload lock chamber 2 to the load lock chamber 1. Yes. In the load lock chamber 1, mounting robots 11 and 11 'for mounting the substrate 9 on the substrate holder 90 are provided. The mounting robot 11 ′ simultaneously holds a plurality of (for example, 50) substrates 9 from the substrate loading chamber 12 by the arm and places them on the substrate loading stocker 13. The mounting robot 11 is configured to simultaneously hold two substrates 9 from the substrate loading stocker 13 by the arm and mount the substrates 9 on the substrate holder 90. The unload lock chamber 2 is provided with recovery robots 21 and 21 'having the same configuration as the mounting robots 11 and 11'. The collection robot 21 simultaneously holds two substrates 9 from the substrate holder 90 by the arm and places the substrates 9 on the substrate collection stocker 23. The recovery robot 21 ′ is configured to simultaneously hold a plurality (for example, 50) of substrates 9 from the substrate recovery stocker 23 by the arm and recover them to the substrate recovery chamber 22. The substrate loading stocker 13 is provided because all substrates in the substrate loading chamber 12 can be loaded into the substrate loading chamber 12 if all the substrates are placed on the substrate loading stocker 13. This is because productivity can be improved. The same applies to the substrate thrower / recovery stocker 23.

  The vacuum chambers 4, 31-34, 50-54 and 500 arranged on the other three sides of the square are vacuum chambers for performing various processes on the substrate 9. The square corner vacuum chambers 31-34 are direction changing chambers 31, 32, 33, 34 provided with direction changing means for changing the direction of the substrate holder 90 to be conveyed by 90 degrees. In this embodiment, the vacuum chamber 500 is a preliminary chamber 500. The preliminary chamber 500 is configured as a chamber for cooling the substrate 9 as necessary. After passing through the preliminary chamber 500, the substrate 9 reaches the unload lock chamber 2 through the last direction changing chamber 34.

  In FIG. 1, the substrate holder 90 holding the substrate 9 is conveyed clockwise in the thin film forming apparatus. The processing vacuum chamber in which the substrate 9 held by the substrate holder 90 is transported first is the preheat chamber 4 that preheats the substrate 9 to a predetermined temperature prior to film formation. After preheating in the preheating chamber 4, the substrate 9 is transported in one or more film forming chambers for forming a predetermined thin film on the surface of the substrate 9. In this embodiment, a plurality of film forming chambers 51, 52, 53, 54, 50 arranged in series along a square side are used. The film forming chambers 51, 52, 53, and 54 are sputter film forming chambers for forming a film on a substrate by sputtering, and the film forming chamber 50 is a protective film forming chamber.

  A film peeling prevention chamber 710 is provided between the load lock chamber 1 and the unload lock chamber 2. The film peeling prevention chamber 710 is also a vacuum chamber provided with an exhaust system (not shown), like the film forming chambers 51, 52, 53, 54, 50 for forming a thin film.

  In the thin film forming apparatus of the first embodiment, the moving means moves the substrate holder 90 holding the substrate 9 clockwise along the moving path 80 so that the substrates 9 are sequentially processed. As an example of the moving unit, a linear moving unit that linearly moves the substrate holder 90 will be described with reference to FIGS.

  2 and 3 are diagrams for explaining the configuration of the substrate holder 90 and the moving means in the apparatus shown in FIG. 1, FIG. 2 is a schematic front view thereof, and FIG. 3 is a schematic side sectional view thereof.

  The configuration of the substrate holder 90 includes a substrate holder main body 92 and a holding claw 91 provided on the periphery of the substrate holder main body 92. A total of six holding claws 91 are provided, and three hold claws 91 are held together to hold one substrate 9. Of the three holding claws 91, the holding claw 91 located on the lower side is a movable holding claw. That is, a lever 93 that pushes down the holding claw 91 against its elasticity is provided. When the substrate 9 is mounted on the substrate holder 90, the lower holding claw 91 is pushed down by the lever 93 so that the substrate 9 is positioned in the circular opening of the holder body 92. Then, the lever 93 is returned to return the lower holding claw 91 to its original posture by its elasticity. As a result, the substrate 9 is locked by the three holding claws 91, and the two substrates 9 are held by the substrate holder 90. When the substrate 9 is collected from the substrate holder 90, the operation is completely opposite. The substrate holder 90 is configured to hold two substrates 9 at the same time. As shown in FIG. 2, the substrate holder 90 in the first embodiment includes a large number of magnets (hereinafter referred to as “holder-side magnets”) 96 at the lower end thereof. Each holder side magnet 96 has magnetic poles on the upper and lower surfaces. And this holder side magnet 96 is arrange | positioned so that it may have a reverse polarity alternately along the sequence direction, as shown in FIG.

  A magnetic coupling roller 81 is provided below the substrate holder 90 with a partition wall 83 interposed therebetween. The magnetic coupling roller 81 is a round bar-like member, and has an elongated magnet (hereinafter referred to as “roller-side magnet”) 82 extending spirally as shown in FIG. Two roller-side magnets 82 are provided with different magnetic poles, and have a double spiral shape. The magnetic coupling roller 81 is disposed such that the roller side magnet 82 faces the holder side magnet 96 with the partition wall 83 interposed therebetween. The partition wall 83 is made of a material having high magnetic permeability, and the holder side magnet 96 and the roller side magnet 82 are magnetically coupled through the partition wall 83. Note that the space on the substrate holder 90 side of the partition wall 83 is a vacuum (inside of each vacuum chamber), and the space on the magnetic coupling roller 81 side is the atmosphere. Such a magnetic coupling roller 81 is provided along a square moving path 80 shown in FIG.

  As shown in FIG. 3, the substrate holder 90 is placed on a main pulley 84 that rotates about a horizontal rotation axis. A large number of main pulleys 84 are provided along the moving direction of the substrate holder 90. In addition, a pair of sub pulleys 85, 85 that rotate around a vertical rotation axis are in contact with the lower end portion of the substrate holder 90. The sub pulleys 85, 85 prevent the substrate holder 90 from tilting by pressing the lower end portion of the substrate holder 90 from both ends. A large number of the sub pulleys 85 are also provided in the moving direction of the substrate holder 90. As shown in FIG. 3, a driving rod 86 is connected to the magnetic coupling roller 81 via a bevel gear. A movement motor 87 is connected to the drive rod 86, and the magnetic coupling roller 81 is rotated about its central axis via the drive rod 86.

  When the magnetic coupling roller 81 rotates, the double spiral roller side magnet 82 shown in FIG. 2 also rotates. At this time, when the roller side magnet 82 is rotated, when viewed from the holder side magnet 96, a plurality of magnets having alternately different magnetic poles are arranged in a line and are linearly moved integrally along the direction of arrangement. It becomes the same state as. Accordingly, the holder-side magnet 96 magnetically coupled to the roller-side magnet 82 moves linearly as the roller-side magnet 82 rotates, and as a result, the substrate holder 90 moves linearly as a whole. At this time, the main pulleys 85 and 85 shown in FIG. 3 are driven.

  Now, a major feature of the thin film forming apparatus of the first embodiment is that a film peeling prevention chamber 710 having a film coating means for performing film coating on the surface of the substrate holder 90 in a vacuum is provided. is there. As shown in FIG. 1, the film peeling prevention chamber 710 is provided between the load lock chamber 1 and the unload lock chamber 2 and is airtightly connected so that a vacuum is communicated. Gate valves 10 are provided between the load lock chamber 1 and the film peeling prevention chamber 710 and between the film peeling prevention chamber 710 and the unload chamber 2, respectively.

The configuration of the film peeling prevention chamber 710 and the film coating means according to the first embodiment of the present invention will be described in detail with reference to FIG. FIG. 4 is a schematic side cross-sectional view illustrating the configuration of the film peeling prevention chamber 710 provided in the apparatus shown in FIG. The film peeling prevention chamber 710 according to the first embodiment of the present invention is also an airtight vacuum chamber similar to the processing chamber described above. The film peeling prevention chamber 710 has an exhaust system 71. The exhaust system 71 is configured so that the inside of the film peeling prevention chamber 710 can be exhausted to about 1 × 10 ⁻⁶ Pa.

  The film coating means includes a gas introduction system 56 for introducing a process gas therein, a target 57 provided with a surface to be sputtered exposed in the internal space, and a sputtering power supply 58 for applying a sputtering discharge voltage to the target 57. And a magnet mechanism 59 provided behind the target 57. In this embodiment, tantalum (Ta) is used as the material of the target 57. In addition, titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), chromium (Cr), molybdenum (Mo), tungsten (W), iron (Fe), ruthenium ( Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold ( Au, aluminum (Al), gallium (Ga), indium (In), or the like may be used as the target 57 material.

The exhaust system 71 can exhaust the inside of the film peeling prevention chamber 710 to about 1 × 10 ⁻⁶ Pa. The gas introduction system 56 is configured to introduce a gas such as argon as a process gas at a predetermined flow rate. The sputter power supply 58 is configured to apply a negative high voltage of about −300V to −500V to the target 57. The magnet mechanism 59 is for achieving magnetron discharge, and includes a central magnet 591, a ring-shaped peripheral magnet 592 that surrounds the central magnet 591, and a plate-shaped yoke 593 that connects the central magnet 591 and the peripheral magnet 592. Composed. The target 57 and the magnet mechanism 59 are fixed to the film peeling prevention chamber 710 through an insulating block 571. The film peeling prevention chamber 710 is electrically grounded.

  While the process gas is being introduced by the gas introduction system 56, the inside of the film peeling prevention chamber 710 is maintained at a predetermined pressure by the exhaust system 71, and the sputtering power source 58 is operated in this state. As a result, sputter discharge occurs, the target 57 is sputtered, Ta which is the material of the sputtered target 57 reaches the substrate holder 90 and the substrate holding claw 91, and the surface of the substrate holder 90 and the holding claw 91. Then, a Ta coating film is formed. As shown in FIG. 4, the set of the target 57, the magnet mechanism 59, and the sputtering power source 58 is provided on both sides of the substrate holder 90 and the holding claws 91 in the film peeling prevention chamber 710, and holds the substrate. A coating film is formed on both sides of the tool 90 and the holding claw 91 at the same time.

  As shown in FIG. 4, the substrate holder 90 is arranged to be positioned in front of the target 57 and coats the entire substrate holder 90.

  Next, the operation of the film peeling prevention chamber 710 and the film coating means related to the above configuration will be described. A thin film is deposited on the surfaces of the substrate holder 90 and the holding claws 91 which are transported through the film forming chambers 51, 52, 53, 54 and 50 and used for film formation while holding the substrate 9. Also, a carbon protective film having a very high stress can be deposited in these thin films. According to the thin film forming apparatus of the present invention, in the unload lock chamber 2, the film-formed substrate 9 is collected from the substrate holder 90, and the substrate holder 90 is not held by the substrate 9 by the moving means. Move to the film peeling prevention chamber 710. Thereafter, the gate valve 10 is closed.

  The inside of the film peeling prevention chamber 710 is evacuated to a predetermined vacuum pressure in advance by the exhaust system 71, and the pressure is maintained. After the gate valve 10 is closed, exhaust is performed by the exhaust system 71 while introducing the process gas by the gas introduction system 56, and the inside of the film peeling prevention chamber 710 is maintained at a predetermined pressure. In this state, the sputtering power source 58 is operated. As a result, sputter discharge occurs, the target 57 is sputtered, Ta which is the material of the sputtered target 57 reaches the substrate holder 90 and the holding claws 91, and the surface of the substrate holder 90 and the holding claws 91 has low stress. Coat Ta film. As a result, the high stress film attached to the substrate holder 90 and the holding claws 91, in particular, the carbon protective film or the like can be coated with the low stress Ta film while the film thickness is still thin. As a result, peeling of the deposited film from the substrate holder 90 and the holding claws 91, which has been a problem in the prior art, can be suppressed and adhesion of particles to the surface of the substrate 9 can be suppressed.

  Note that it is preferable to adjust sputtering conditions such as pressure, argon gas flow rate, and film formation time so that the Ta film to be coated has a thickness of 1 nm or more. The fact that the effect of suppressing the peeling of the deposited film increases when the thickness of the film to be coated is 1 nm or more is a result obtained by the present inventors as a result of intensive research.

  Next, a thin film forming apparatus according to a second embodiment of the present invention will be described. A schematic configuration of the thin film forming apparatus is also shown in FIG.

  A major feature of the thin film forming apparatus according to the second embodiment is that the film peeling prevention chamber 710 is provided with a film removing mechanism for performing film removal in a vacuum and a film coating mechanism for performing film coating in a vacuum thereafter. The film removal prevention chamber 720 provided with the film removal mechanism and the coating mechanism is provided.

The configuration of the film peeling prevention chamber 720, the film removing means and the coating means according to the second embodiment of the present invention provided with the film removing means and the coating means will be described in detail with reference to FIG. FIG. 5 is a schematic side sectional view for explaining the configuration of the film film peeling prevention chamber 720 provided in the apparatus shown in FIG. The film peeling prevention chamber 720 is also an airtight vacuum chamber like the film peeling prevention chamber 710 described above. The film peeling prevention chamber 720 has an exhaust system 701. The exhaust system 701 can exhaust the film peeling prevention chamber 720 to about 1 × 10 ⁻⁶ Pa.

  The film removing means is configured to include a gas introduction system 72 for introducing a process gas therein and a high frequency power source 73 for generating high frequency discharge in the introduced gas.

  The gas introduction system 72 and the high frequency power source 73 cause high frequency discharge in the film peeling prevention chamber 720, and the film deposited on the substrate holder 90 is removed by sputter etching or oxygen ashing. After the film deposited on the substrate holder 90 is removed to some extent, the film coating means coats the deposited film that has not been removed with a film having low stress and high adhesion.

  The gas introduction system 72 introduces a gas that is chemically inert and easily causes discharge, such as argon, and has a high sputtering rate. Further, oxygen may be introduced through the gas introduction system 72 when removing the carbon film. The gas introduction system 72 includes a flow rate regulator (not shown) so that gas can be introduced at a predetermined flow rate. As the high frequency power source 73, for example, a power source having a frequency of 13.56 MHz and an output of about 100 W to 1000 W can be used. On the other hand, a movable electrode 74 is provided in the film peeling prevention chamber 720, and a transmission line 732 is provided so as to connect the high-frequency power source 73 and the movable electrode 74 via a matching unit 731. As the transmission line 732, for example, a coaxial cable is used.

  The movable electrode 74 is connected to an electrode spring 741 whose tip is in contact with the holder main body 92 of the substrate holder 90, an electrode drive rod 743 having the electrode spring 741 attached to the tip via an insulating material, and the electrode drive rod 743. And an electrode driving source 744. The electrode spring 741 has a leaf spring shape.

  The electrode driving rod 743 passes through a through hole provided in the film peeling prevention chamber 720. The electrode driving rod 743 has a flange portion 746 at a portion located outside (atmosphere side) of the film peeling prevention chamber 720. A bellows 748 is provided between the flange portion 746 and the outer wall surface of the film peeling prevention chamber 720. The bellows 748 prevents a vacuum leak from a portion where the electrode driving rod 743 penetrates the film peeling prevention chamber 720. The electrode driving rod 743 is hollow, and a high frequency introducing rod 747 is provided inside through an insulating buffer material. The tip of the high-frequency introduction rod 747 is fixed to the electrode spring 741. An opening is provided in a portion of the electrode driving rod 743 located in the bellows 748. The transmission line 732 connected to the high frequency power source 73 penetrates the flange portion 746 in an airtight manner and is connected to the high frequency introduction rod 747 through this opening. For example, an air cylinder is used as the electrode drive source 744, and the electrode drive rod 743 is moved back and forth with a predetermined stroke.

  Next, the operation of the film removing means related to the above configuration will be described. As described above, a thin film is formed on the surfaces of the substrate holder 90 and the holding claws 91 that are transported in the film formation chambers 51, 52, 53, 54, and 50 and used for film formation while holding the substrate 9. It is accumulating. Also, a carbon protective film having a very high stress can be deposited in these thin films. In the unload lock chamber 2, the film-formed substrate 9 is collected from the substrate holder 90. Thereafter, the substrate holder 90 is moved to the film peeling prevention chamber 720 by the moving means without holding the substrate 9, and the gate valve 10 is closed.

  The inside of the film peeling prevention chamber 720 is evacuated to a predetermined vacuum pressure in advance by the exhaust system 71, and the pressure is maintained. Then, the electrode driving source 744 is driven, and the electrode driving rod 743 moves forward by a predetermined stroke. As a result, the electrode spring 741 also advances through the electrode holder 742 and contacts the side surface of the holder main body 92 as shown in FIG. At this time, the electrode spring 741 absorbs an impact caused by contacting the substrate holder main body 92. For this reason, wear of the electrode spring 741 is suppressed. Further, due to the elasticity of the electrode spring 741, the contact with the holder main body 92 is reliably maintained. In this state, the high frequency power source 73 is operated, and a high frequency voltage is applied to the holder main body 92 and the holding claws 91 through the transmission line 732, the high frequency introduction rod 747 and the electrode spring 741.

  When a high frequency voltage is applied to the holder main body 92 and the holding claw 91, an electric field is formed between the wall of the film peeling prevention chamber 720 and the like, which is maintained at the ground potential, and is introduced into the film peeling prevention chamber 720. A high frequency discharge is generated in the gas, and a high frequency discharge plasma is formed. At this time, there is a capacitance between the plasma and the high-frequency power source 73 due to a capacitor included in the matching unit 731 or a capacitor (not shown) provided separately. When a high-frequency electric field is set via a capacitance in a space where plasma is formed, electrons and ions in the plasma act on charging and discharging of the capacitance. As a result, due to the difference in mobility between electrons and ions, a negative current voltage called a self-bias voltage is superimposed on the surfaces of the holder body 92 and the holding claws 92.

  When argon gas is introduced into the film peeling prevention chamber 720, the argon ions in the plasma are accelerated by this negative self-bias voltage and are incident on the deposited films on the surfaces of the holder body 92 and the holding claws 91, Collide with the membrane. As a result, the deposited film is sputter etched and removed from the holder body 92 and the holding claws 91.

  Further, when oxygen gas is introduced into the film peeling prevention chamber 720 instead of argon gas, oxygen plasma is generated, thereby generating active oxygen. The active oxygen reacts with the above-described carbon protective film having high stress, and is converted into a gas such as carbon monoxide or carbon dioxide and discharged. Thereby, the deposited film is subjected to oxygen ashing and removed from the holder main body 92 and the holding claws 91.

  After these sputter etching and ashing are performed for a predetermined time, the operation of the high frequency power source 73 is stopped. Thereafter, the electrode drive source 744 is driven to pull the electrode spring 741 away from the holder main body 92.

  Subsequently, argon gas is introduced by the gas introduction system 72, and the above-described film coating means is started in the same manner as in the first embodiment. That is, the sputtering power source 58 is operated, and as a result, sputtering discharge occurs, the target 57 is sputtered, and Ta which is the material of the sputtered target 57 reaches the substrate holder 90 and the holding claw 91, and the substrate holder 90 and the holder are held. The surface of the nail 91 is coated with a low stress Ta film having a thickness of 1 nm or more. As a result, the film having a high stress attached to the substrate holder 90 and the holding claws 91, in particular, the carbon protective film or the like can be coated with the Ta film having a low stress while the film thickness is thin. As a result, peeling of the deposited film from the substrate holder 90 and the holding claws 91, which has been a problem in the past, is suppressed, and particle adhesion to the surface of the substrate 9 can be suppressed.

  FIG. 6 is a plan view showing a schematic configuration of a thin film forming apparatus according to the third embodiment of the present invention.

  As shown in FIG. 6, the thin film forming apparatus according to the present embodiment is characterized in that a film removal unit and a film coating unit similar to those described in the second embodiment are separated into separate chambers (a film removal chamber 71 and a film coating). The point is that they are arranged separately in the chamber 72).

  According to the thin film forming apparatus of the present embodiment, first, the deposited substrate 9 is collected from the substrate holder 90 in the unload lock chamber 2. The substrate holder 90 moves to the film removal chamber 71 by the moving means without holding the substrate 9. In the film removal chamber 71, the film deposited on the substrate holder 90 is removed by sputter etching or oxygen ashing using a film removing means. The substrate holder 90 is further moved to the film coating chamber 72, and the deposited film that cannot be removed is coated with a Ta film having a low stress and a high adhesion to a thickness of 1 nm or more.

  As a result, similarly to the thin film forming apparatus of the second embodiment, peeling of the deposited film from the substrate holder 90 and the holding claws 91 is suppressed, and particle adhesion to the surface of the substrate 9 can be suppressed.

Next, a film forming method will be described with reference to FIGS.
FIG. 7 is a plan view showing a schematic configuration of the thin film forming apparatus according to the present invention. FIG. 8 is an example of a film configuration created by the thin film creation apparatus according to the present invention.
Each of the film forming chambers 61, 62, 63, 64, and 65 is a sputtering apparatus and has a configuration in which targets are arranged on both sides of a substrate. The chamber 66 is a heat chamber. The film forming chambers 67 and 68 are CVD apparatuses. The chamber 69 is a spare chamber. Other configurations are the same as those of the thin film forming apparatus shown in FIG.

  The substrate 9 mounted on the substrate holder 90 in the load lock chamber 1 reaches the film forming chamber 61 via the direction changing chamber 31 by the moving means. In the film forming chamber 61, a Cr-based base film 801 is formed by sputtering film formation. Next, the substrate 9 is transferred to the film forming chamber 62, and a SUL (Soft under layer) layer 802 is formed by sputtering. Next, the substrate 9 is transferred to the film forming chamber 63, and the base layer 803 is formed by sputtering film formation. Next, the substrate 9 arrives at the film formation chamber 64 via the direction change chamber 32, and an intermediate layer 804 (mainly Ru layer) is formed by sputtering film formation using a Ru target. Next, the substrate 9 is transferred to the film formation chamber 65, and a Co-based magnetic film 805 is formed by sputtering film formation. Next, the substrate 9 is transferred to the heat chamber 66, and the substrate 9 is heated. Next, the substrate 9 is transferred to the film forming chambers 67 and 68 via the direction changing chamber 33, and a protective film 806 made of diamond-like carbon is formed by CVD film formation. The film forming chambers 67 and 68 are protective film forming chambers. In the film forming chamber 67, a protective film having a thickness that is half the required thickness is formed, and in the next film forming chamber 68, the remaining half thickness is formed. A protective film is created.

  The protective film creation chambers 67 and 68 include a process gas introduction system (not shown) that introduces an organic compound gas such as CH4 into the inside, and a plasma formation means (not shown) that forms high-frequency energy to the process gas to form plasma. ing. The organic compound gas is decomposed in the plasma, and a carbon thin film is deposited on the surface of the substrate 9.

  A vacuum chamber in which the substrate 9 is transported next to the protective film forming chambers 67 and 68 is a spare chamber 69. The spare chamber 69 is configured as a chamber for cooling the substrate 9 as necessary. After passing through the preliminary chamber 69, the substrate 9 reaches the unload lock chamber 2 through the last direction changing chamber 34.

  Next, the overall operation of the apparatus according to the present embodiment having the above configuration will be described. In the apparatus of this embodiment, the substrate holder 90 is always located in all the vacuum chambers. The substrate holder 90 in each vacuum chamber moves simultaneously to the next vacuum chamber at every tact time determined by the work time in the vacuum chamber (rate-controlling chamber) that performs the most time-consuming work. When attention is paid to the movement of a specific substrate 9, one substrate 9 is mounted on the substrate holder 90 in the load lock chamber 1, and then the film formation chamber 61, the film formation chamber 62, the film formation chamber 63, and the film formation chamber 64. A laminated film is formed through the film forming chamber 65 and the heat chamber 66. Thereafter, a protective film is formed on the substrate 9 in the protective film forming chambers 67 and 68, and reaches the unload lock chamber 2 through the auxiliary chamber 69. Then, the substrate 9 is recovered from the substrate holder 90 in the unload lock chamber 2.

  The substrate holder 90 reaches the film peeling prevention chamber 710 formed in the return movement path after being emptied (in a state where the substrate 9 is not held) in the unload lock chamber 2. In the film peeling prevention chamber 710, coating is performed as if a target (for example, Cr) whose stress is smaller than that of carbon used as a protective film. Here, the target used is preferably the same as the target used in the film forming chambers (sputtering chambers) 61, 62, 63, 64, 65. Then, at the next tact time, the operation moves to the load lock chamber 1 and the unmounted substrate 9 is mounted. In this way, the substrate holder 90 goes around the square moving path 80 shown in FIG. 7 and is used many times for the film forming process.

In this way, the substrate holder 90 is used for a predetermined number of film forming processes by circulating around the moving path 80 a predetermined number of times.
As described above, the coating operation may be performed every time the substrate holder 90 circulates. However, the coating operation is performed after the substrate holder 90 repeats a predetermined number of times (for example, about 2 to 4 times). May be performed.

  In the apparatus of the present embodiment related to the above-described configuration and operation, the film removal mechanism is provided on the return movement path that returns from the unload lock chamber 2 to the load lock chamber 1, so that there is an advantage that the configuration of the apparatus is simplified. is there. That is, as described above, when performing the film removal operation, it is preferable that the substrate holder 90 does not hold the substrate 9 (empty state) from the viewpoint of preventing the substrate 9 from being damaged. In this case, when the film removal mechanism is not disposed on the return movement path, for example, on the movement path between the load lock chamber 1 and the preheat chamber 4, the substrate holder 90 that performs film removal is described in the load lock chamber. 1 is configured not to perform the mounting operation of the substrate 9. In this case, it is necessary to correct the driving program for the mounting robot 11 in the load lock chamber 1.

  When film formation is performed when the substrate holder 90 that does not hold the substrate 9 is positioned in the film formation chambers 51, 52, 53, 54, 50, the substrate 9 is hidden in the surface area of the holding claws 91. Thus, the film is deposited even in a region where it is not originally deposited. Therefore, when the substrate holder 90 that does not hold the substrate 9 reaches the film formation chambers 51, 52, 53, 54, 50, the film formation chambers 51, 52, 53, 54 are prevented from being formed. , 50 is preferably controlled. However, this also requires a modification of the control program and has a drawback that the operation of the entire apparatus becomes complicated. Further, in the configuration in which the film removal mechanism is arranged on the movement path other than the return movement path, the substrate 9 is mounted after the film removal is performed and the substrate holder 90 moves to the load lock chamber 1 in an empty state. Done. The movement of this part is a useless movement.

  On the other hand, if there is a film removal mechanism on the return movement path from the unload lock chamber 2 to the load lock chamber 1 as in this embodiment, the film can be removed immediately after the film-formed substrate 9 is collected. Thus, it is possible to mount the undeposited substrate 9 immediately after the film removal. For this reason, there is no waste in moving the substrate holder 90, and there is very little modification of the program for control. Further, since the processing chamber does not move when the substrate holder 90 is empty, it is not necessary to modify the control program for the processing vacuum chambers 4, 50 to 54. For this reason, in this embodiment, the configuration of the apparatus is simplified, and application to an existing apparatus is easy. The “return movement path” means a path when the substrate holder from which the film-formed substrate has been collected moves to hold the next non-film-formed substrate. Whether or not there is a special mechanism.

  In addition, the film removal mechanism is provided in the film removal chamber 70, and the film removal chamber 70 is airtightly connected to the load lock chamber 1 and the unload lock chamber 2 so as to communicate with the vacuum. It has the technical significance of preventing the holder 90 from being polluted by the atmosphere. That is, when the substrate holder 90 is exposed to the atmosphere, dust, oxygen, moisture, etc. in the atmosphere may adhere to the surface of the substrate holder 90 as described above. If such a fouling substance is brought into the apparatus via the substrate holder 90, the substrate 9 may be fouled or the quality of the produced thin film may be impaired. However, in this embodiment, the film removal is performed in a vacuum, and the substrate holder 90 is not exposed to the atmosphere in the process from the unload lock chamber 2 to the load lock chamber 1. There is no fear of fouling.

  Even when such a pollutant in the atmosphere adheres to the surface of the substrate holder 90, the pollutant may sometimes be removed together with the film removal mechanism. Therefore, the substrate holder 90 may be exposed to the atmosphere between the unload lock chamber 2 and the film removal chamber 70 in some cases.

  Further, in the apparatus of this embodiment, the substrate holder 90 is not exposed to the atmosphere even in the movement path portion other than the return movement path portion, and film formation is always performed by moving in a vacuum. No fouling substance is brought into the apparatus via the substrate holder 90. Also in this respect, the contamination of the substrate 9 and the deterioration of the quality of the thin film are reduced.

  Further, when the substrate holder 90 with the thin film deposited on the surface is taken out to the atmosphere side, the surface of the thin film is oxidized or foreign matter is attached. Then, when the next substrate 9 is held and a thin film is formed on the surface, the thin film is further deposited on the thin film on which such a surface is oxidized or foreign matter is adhered. When thin films having different properties are laminated, the stress is high and the film is easily peeled off. Therefore, the risk of the generation of the particles is increased. However, the thin film forming apparatus of this embodiment does not have such a problem because the substrate holder 90 is not taken out to the atmosphere side.

  In each of the above-described embodiments, the removal of the deposited film on the surface of the holding claw 91 has been mainly described. However, the deposited film on the surface of the holder main body 92 is also removed in the same manner, and is released from the surface of the holder main body 92. Particles are also reduced.

  In each of the above embodiments, a dedicated film removal chamber 70 having a film removal mechanism is provided, but this is not an essential condition. For example, a film removal mechanism may be provided in the unload lock chamber 2 or the load lock chamber 1. In the case of a configuration in which plasma is formed and removed, it is difficult because the mounting robot 11 or the recovery robot 21 may be exposed to plasma, but in the case of a configuration in which the plasma is removed by light, ultrasonic waves, or the like, there is sufficient feasibility. . However, if a dedicated film removal chamber 70 is prepared, there is an advantage that a configuration in which plasma is formed or a reactive gas is used can be freely selected. The film removal chamber 70 does not need to be provided directly adjacent to the load lock chamber 1 and the unload lock chamber 2, and another vacuum chamber may be interposed therebetween. In short, it is only necessary that the vacuum communicates.

  In the above description, the substrate holder 90 locks the periphery of the substrate 9 by the holding claws 91. However, for a substrate having a circular opening at the center, such as an information recording disk substrate, the center The edge of the opening may be locked. However, in the configuration in which the holding claw locks the edge of the central opening, both surfaces of the substrate cannot be formed simultaneously because of the structure in which the holding claw is provided. Recently, there are many very small information recording disks such as hard disks for notebook personal computers, but it is difficult to lock a small substrate at the edge of the central opening. Therefore, the structure of locking at the periphery of the substrate 9 has the advantage that it allows simultaneous film formation on both sides of the substrate 9 and can be applied to a small substrate.

  In the film removal chamber 70, a configuration in which a plurality of substrate holders 90 stay can be employed. That is, after accommodating a plurality of substrate holders 90 that need to be removed, the film removal mechanism may be operated so that the plurality of substrate holders 90 are collectively removed.

  As described above, according to the invention of each claim of the present application, since the deposited film on the surface of the substrate holder is removed, problems such as generation of particles due to peeling of the deposited film are suppressed. Since the film removal mechanism is provided on the return movement path from the unload lock chamber to the load lock chamber, there is no waste in moving the substrate holder, and the configuration of the apparatus is simplified. According to the second aspect of the present invention, in addition to the above effect, the deposited film on the surface of the substrate holder is removed without taking the substrate holder to the atmosphere side. It is never brought in. For this reason, the board | substrate and the thin film produced are suppressed.

It is a top view which shows schematic structure of the thin film preparation apparatus which concerns on 1st and 2nd embodiment of this invention. It is a front schematic diagram which shows the structure of the board | substrate holder provided in the apparatus shown in FIG. 1, and a moving means. FIG. 2 is a schematic side sectional view showing configurations of a substrate holder and moving means provided in the apparatus shown in FIG. 1. 1 is a schematic side sectional view showing a configuration of a film peeling prevention chamber according to a first embodiment of the present invention. It is a schematic side sectional view showing the configuration of the film peeling prevention chamber according to the second embodiment of the present invention. It is a top view which shows schematic structure of the thin film production apparatus for information recording disc manufacture which concerns on 3rd Embodiment of this invention. It is a top view which shows schematic structure of the thin film preparation apparatus concerning this invention. It is the film | membrane structure produced with the thin film production apparatus which concerns on this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Load lock chamber 2 Unload lock chamber 4 Preheat chamber 9 Substrate 10 Gate valve 11, 11 'Mounting robot 12 Substrate input chamber 13 Substrate input stocker 21, 21' Recovery robot 22 Substrate recovery chamber 23 Substrate recovery stocker 31, 32, 33, 34 Direction changing chambers 51, 52, 53, 54 Sputter deposition chamber 50 Protective film creation chamber 71 Exhaust system 72 Gas introduction system 73 High frequency power source 74 Movable electrode 80 Substrate moving path 90 Substrate holder 91 Holding Claw 92 Holder main body 93 Lever 500 Preliminary chamber 710 Film peeling prevention chamber 720 of the first embodiment Film peeling prevention chamber of the second embodiment

Claims (23)

A film forming chamber for forming a predetermined thin film on a substrate in a vacuum;
A substrate holder for holding the substrate;
A load lock chamber that is hermetically connected to the film formation chamber and mounts the undeposited substrate on the substrate holder before the undeposited substrate is carried into the deposition chamber;
An unload lock chamber that is hermetically connected to the film formation chamber and takes out the substrate holder on which the substrate having been formed is mounted from the film formation chamber and collects the substrate from the substrate holder;
A return moving path for returning the substrate holder from which the film-formed substrate has been collected in the unload lock chamber to the load lock chamber;
In the thin film forming apparatus in which the moving means for moving the substrate holder can be circulated in an endless manner,
A method for preventing peeling of a film deposited on a substrate holder,
A method comprising coating a film deposited on the substrate holder with a coating material on the return movement path.   The method of claim 1, wherein the coating step comprises coating the film deposited on the substrate holder with the coating material by sputtering a target of the coating material.   The coating materials are Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Al, Ga. The method according to claim 1, wherein the material is selected from the group including In, In.   The method according to any one of claims 1 to 3, wherein a thickness of the film coated by the coating step is 1 nm or more.   The substrate holder includes a substrate holder body and a holding claw disposed on a peripheral edge of the substrate holder body, and the coating step includes depositing a film deposited on the surfaces of the holding claw and the substrate holder body. The method of claim 1 including the step of coating. A film forming chamber for forming a predetermined thin film on a substrate in a vacuum;
A substrate holder for holding the substrate;
A load-lock chamber that is hermetically connected to the film formation chamber and mounts the undeposited substrate on the substrate holder before carrying the undeposited substrate into the deposition chamber;
An unload lock chamber that is hermetically connected to the film formation chamber and takes out the substrate holder on which the substrate having been formed is mounted from the film formation chamber and collects the substrate from the substrate holder;
A return moving path for returning the substrate holder from which the film-formed substrate has been collected in the unload lock chamber to the load lock chamber;
In a thin film forming apparatus in which the moving means for moving the substrate holder can circulate in an endless manner, it is a method for preventing peeling of the film deposited on the substrate holder,
Removing the film deposited on the substrate holder on the return movement path;
Coating the film deposited on the substrate holder with a coating material.   The step of removing the film and the step of coating are performed in a vacuum state in a film peeling prevention chamber provided on the return movement path and hermetically connected between the unload lock chamber and the load lock chamber. The method of claim 6, wherein the method is performed.   8. The method according to claim 6, wherein the coating step includes the step of coating the film deposited on the substrate holder with the coating material by sputtering the target of the coating material.   The coating materials are Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Al, Ga. The method according to any one of claims 6 to 8, wherein the material is selected from the group including In and In.   The method according to any one of claims 6 to 9, wherein the thickness of the film coated by the coating step is 1 nm or more.   The substrate holder includes a substrate holder main body and a holding claw disposed on a peripheral edge of the substrate holder. The step of removing the film and the step of coating are performed on the holding claw and the substrate holder main body. 2. The method according to claim 1, further comprising the step of removing the film deposited on the surface, and subsequently coating the film remaining on the surfaces of the holding claws and the substrate holder body. A film forming chamber for forming a predetermined thin film on a substrate in a vacuum;
A substrate holder for holding the substrate;
A load-lock chamber that is hermetically connected to the film formation chamber and mounts the undeposited substrate on the substrate holder before carrying the undeposited substrate into the deposition chamber;
An unload lock chamber that is hermetically connected to the film formation chamber and takes out the substrate holder on which the substrate having been formed is mounted from the film formation chamber and collects the substrate from the substrate holder;
Moving means for moving the substrate holder;
A return moving path for returning the substrate holder from which the film-formed substrate has been collected in the unload lock chamber to the load lock chamber;
A thin film production apparatus comprising:
The moving means moves the substrate holder on which the substrate is mounted in the order of the load lock chamber, the film formation chamber, and the unload lock chamber,
A thin film forming apparatus, wherein a film coating means for coating a film deposited on the substrate holder with a coating material is provided on the return movement path.   A film peeling prevention chamber having the film coating means is provided on the return movement path so that the film deposited on the substrate holder can be coated in a vacuum. 13. The thin film forming apparatus according to claim 12, wherein the thin film forming apparatus is hermetically connected between the unload lock chamber and the load lock chamber.   14. The thin film forming apparatus according to claim 12, wherein the film coating unit coats the film deposited on the substrate holder with the coating material by sputtering the target of the coating material.   The coating materials are Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Al, Ga. The thin film forming apparatus according to claim 12, wherein the thin film forming apparatus is a material selected from a group including In, In.   The thin film forming apparatus according to any one of claims 12 to 15, wherein a thickness of the film coated by the film coating unit is 1 nm or more.   The substrate holder includes a substrate holder main body and a holding claw disposed on a peripheral edge of the substrate holder main body, and the film coating unit applies a film deposited on the surfaces of the holding claw and the substrate holder main body. 2. The thin film forming apparatus according to claim 1, wherein coating is performed. A film forming chamber for forming a predetermined thin film on a substrate in a vacuum;
A substrate holder for holding the substrate;
A load lock chamber that is hermetically connected to the film formation chamber and mounts the undeposited substrate on the substrate holder before carrying the undeposited substrate into the deposition chamber;
An unload lock chamber that is hermetically connected to the film formation chamber and takes out the substrate holder on which the substrate having been formed is mounted from the film formation chamber and collects the substrate from the substrate holder;
Moving means for moving the substrate holder;
A return moving path for returning the substrate holder from which the film-formed substrate has been collected in the unload lock chamber to the load lock chamber;
A thin film production apparatus comprising:
The moving means moves the substrate holder on which the substrate is mounted in the order of the load lock chamber, the film formation chamber, and the unload lock chamber,
A film removing means for removing the film deposited on the substrate holder and a film coating means for coating the film remaining on the substrate holder with a coating material are provided on the return movement path. Thin film making device.   A film peeling prevention chamber having the film removing means and the film coating means is provided on the return movement path, and the film coating on the film remaining on the substrate holder and the film coating on the substrate holder are vacuumed. The thin film forming apparatus according to claim 18, wherein the film peeling prevention chamber is hermetically connected between the unload lock chamber and the load lock chamber.   20. The thin film forming apparatus according to claim 18, wherein the film coating means coats the film deposited on the substrate holder with the coating material by sputtering a target of the coating material.   The coating materials are Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Al, Ga. 21. The thin film forming apparatus according to claim 18, wherein the thin film forming apparatus is a material selected from a group including In and In.   The thin film forming apparatus according to any one of claims 18 to 21, wherein a thickness of the film coated by the film coating unit is 1 nm or more.   The substrate holder includes a substrate holder body and a holding claw disposed on a peripheral edge of the substrate holder body, and the film removing unit and the film coating unit are provided on the surfaces of the holding claw and the substrate holder body. 2. The thin film forming apparatus according to claim 1, wherein the deposited film is removed, and then the film remaining on the surfaces of the holding claws and the substrate holder main body is coated.

Images