JP2009190068A - Gas cluster ion beam machining method and machining control program - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve machining accuracy of a workpiece when machining the workpiece while relatively changing an irradiation position which is irradiated with a gas cluster ion beam. <P>SOLUTION: In a gas cluster ion beam machining device 100, a gas cluster ion beam 10 is generated from a gas flow jetted from a nozzle 5 by using a tungsten filament 7, an extraction electrode 8, and an acceleration electrode 9 and irradiated through an aperture 22 to a workpiece 21, which is held by an attitude controller 13, to conduct micro-machining. A distance L (the range of the gas cluster ion beam 10) from the acceleration electrode 9, from which the gas cluster ion beam 10 is emitted, to a machining point of the workpiece 21 is controlled to a constant distance L0 in machining to suppress variations in the machining amount caused by variations in the range of the gas cluster ion beam 10, so that the workpiece 21 is machined with high accuracy. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a gas cluster ion beam processing method and a processing control program.

For example, a polishing method is generally applied to a workpiece that requires good surface roughness, such as an optical element or an optical element molding die.
However, this polishing method mechanically removes the processed surface by sliding between the workpiece and the polishing tool, and the surface roughness that can be achieved is that the center line average roughness Ra is about 3 to 10 nm. It is a limit. In addition, scratches may occur on the polished surface due to variations in polishing tools and abrasive grains, and contamination with dust and the like, and it cannot be said that the processing stability is high.

  As a means for obtaining a smooth surface having a smaller surface roughness, there is a method of irradiating a work piece with a gas cluster ion beam and polishing a solid surface with ultraprecision. The cluster ion is broken when the gas cluster ion beam irradiated to the workpiece collides with the workpiece. At that time, many-body collision occurs between the cluster constituent atoms or molecules and the workpiece constituent atoms or molecules, and the workpiece is processed. The movement in the horizontal direction with respect to the surface becomes remarkable, and the convex portions on the surface are mainly shaved so that flat ultra-precision polishing at the atomic size can be performed.

  As a processing technique using this gas cluster ion beam, a technique disclosed in Patent Document 1 (Japanese Patent Laid-Open No. 2005-120393) is known and will be described with reference to FIGS.

  In this technique, a moving means 203 for changing the irradiation position of the gas cluster ion beam 202 relative to the workpiece 200 is provided, and the removal amount is controlled by controlling the irradiation time for each irradiation position to control the workpiece 200. Correct the shape. The moving means 203 can move in a plane perpendicular to the incident direction of the gas cluster ion beam 202 and swivel in one plane parallel to the incident direction of the gas cluster ion beam 202. A workpiece having a shape can also be irradiated with a gas cluster ion beam 202 perpendicularly to a target processing position.

In the technique of Patent Document 1, the irradiation time is determined based on the following relational expression.
Irradiation time = (irradiation dose amount × irradiation area × elementary electron amount e) / (detection ion current amount) (1)
On the other hand, it is already known that the energy density of the gas cluster ion beam 202 decreases as the distance (range) from the acceleration electrode 204 to the emission direction in the gas cluster ion beam processing apparatus 201 increases.

  This is because the gas cluster ion beam 202 emitted from the acceleration electrode 204 diverges and the cluster ions collide with the residual gas in the vacuum to lose energy. That is, in the processing by the gas cluster ion beam, the processing amount changes depending on the position of the workpiece in the emission direction of the gas cluster ion beam.

The relationship of the above equation (1) is a principle equation derived as having no energy loss. In the conventional example in which the irradiation time of the gas cluster ion beam is determined based on this equation, the emission of the gas cluster ion beam is performed. Since the machining amount changes depending on the position in the direction, there is a divergence between the calculated machining amount and the actual machining amount, which makes it difficult to correct the shape or requires a lot of machining time for the shape correction. .
JP 2005-120393 A

  An object of the present invention is to provide a technique capable of improving the processing accuracy of a workpiece when processing while relatively changing the irradiation position of a gas cluster ion beam to the workpiece.

A first aspect of the present invention is a gas cluster ion beam processing method for processing a workpiece by irradiating the workpiece with a gas cluster ion beam,
Provided is a gas cluster ion beam processing method for maintaining a constant distance between a generation portion of the gas cluster ion beam and a processing position of the workpiece during processing.

A second aspect of the present invention is a gas cluster ion beam processing method for processing a workpiece by irradiating the workpiece with a gas cluster ion beam,
Determining a machining amount at a machining position of the workpiece;
Changing the distance between the gas cluster ion beam generator and the processing position during processing according to the processing amount at the processing position;
A gas cluster ion beam processing method is provided.

A third aspect of the present invention is a generator for generating a gas cluster ion beam;
An attitude control device for controlling the relative attitude of the workpiece with respect to the gas cluster ion beam;
A computer for controlling the attitude control device;
A processing control program for a gas cluster ion beam processing apparatus including:
Provided is a machining control program for causing the computer to realize a function of controlling the posture control device so as to keep a constant distance between the generating unit and the machining position of the workpiece during machining.

A fourth aspect of the present invention is a generator for generating a gas cluster ion beam;
An attitude control device for controlling the relative attitude of the workpiece with respect to the gas cluster ion beam;
A computer for controlling the attitude control device;
A processing control program for a gas cluster ion beam processing apparatus including:
The computer has a function of controlling the attitude control device so that the distance between the gas cluster ion beam generator and the processing position is changed during processing according to the processing amount at the processing position of the workpiece. A machining control program is provided.

  ADVANTAGE OF THE INVENTION According to this invention, the technique which can improve the processing precision of the workpiece at the time of processing, changing the irradiation position of the gas cluster ion beam with respect to a workpiece relatively can be provided.

  In the first aspect of the present embodiment, the gas cluster ion beam is performed while controlling the posture of the workpiece so that the gas cluster ion beam is irradiated perpendicularly to the target processing position of the workpiece. In the removal processing method using, the distance between the acceleration electrode of the gas cluster ion beam device and the target processing position of the workpiece (range of the gas cluster ion beam) is kept constant during processing.

Thereby, since the processing amount in the processing range of the workpiece can be made uniform, the surface roughness can be improved while maintaining the shape accuracy of the workpiece.
In the second aspect, the gas cluster ion beam is used while controlling the posture of the workpiece so that the gas cluster ion beam is irradiated perpendicularly to the target processing position of the workpiece. In the removal processing method, a required removal amount for each processing position of the workpiece is calculated from a difference between the shape data of the workpiece before processing and target shape data, and a gas cluster ion beam is calculated according to the required removal amount. A distance between an acceleration electrode of the apparatus and a target processing position on the workpiece is variably controlled during processing.

Thereby, the improvement in surface roughness can be achieved while efficiently improving the shape accuracy of the workpiece.
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[Embodiment 1]
FIG. 1 is a conceptual diagram illustrating an example of a configuration of a gas cluster ion beam processing apparatus that performs a gas cluster ion beam processing method according to an embodiment of the present invention, and FIG. 2 illustrates a gas cluster according to the present embodiment. It is a perspective view which shows an example of a structure of the attitude | position control apparatus which comprises an ion beam processing apparatus.

3, 4, and 5 are explanatory diagrams illustrating an example of the operation of the gas cluster ion beam processing method and apparatus according to the present embodiment.
[Constitution]
As illustrated in FIG. 1, the gas cluster ion beam processing apparatus 100 of the present embodiment includes a source chamber 1 and a main chamber 2. The source chamber 1 is a vacuum chamber that is differentially evacuated by an exhaust pump 3, and similarly, the main chamber 2 is a vacuum chamber that is differentially evacuated by an exhaust pump 4.

A nozzle 5 is provided at the center of the source chamber 1, and a skimmer 6 is provided coaxially with the nozzle 5 at the boundary between the source chamber 1 and the main chamber 2.
Inside the main chamber 2, a tungsten filament 7, an extraction electrode 8, an acceleration electrode 9, and an aperture 22 are arranged in this order at a position coaxial with the skimmer 6, thereby forming a generation part of the gas cluster ion beam 10. Furthermore, an attitude control device 13 placed on the base 12 is provided behind the aperture 22.

For example, a high pressure gas of about 0.6 to 1.0 MPa is supplied from the gas cylinder 11 to the nozzle 5. As this gas, for example, argon gas, oxygen gas, nitrogen gas, SF ₆ gas, helium gas, compound carbon dioxide gas or two or more kinds of gases can be mixed.

  A gas cluster is generated by adiabatic expansion at the moment when such high-pressure gas is ejected from the nozzle 5 at supersonic speed, and then passes through the skimmer 6 to adjust the beam diameter. The gas cluster ion beam 10 when passing through the skimmer 6 is a neutral beam, but is ionized by the collision of the hot electrons of the tungsten filament 7 and extracted by the extraction electrode 8.

  Next, the gas cluster ion beam 10 is accelerated by the acceleration electrode 9. An aperture 22 is disposed at the tip of the accelerating electrode 9, and the gas cluster ion beam 10 is cut out to the diameter of the opening 22 a of the aperture 22 and then emitted to the attitude control device 13 side.

  Since it is known that the processing surface roughness due to irradiation with the gas cluster ion beam 10 depends on the irradiation angle, the gas cluster ion beam 10 is only in a range where the surface roughness does not deteriorate according to the shape of the workpiece 21. The aperture 22a of the aperture 22 is set to be irradiated.

Further, as described above, the attitude control device 13 to which the workpiece 21 is fixed is disposed on the base 12 at the tip of the aperture 22.
FIG. 2 illustrates a posture control device 13 when performing posture control of the workpiece 21 having a rotational axis symmetry shape.

In this case, the workpiece 21 held by the attitude control device 13 has a rotationally symmetric shape with respect to the vertex P of the workpiece surface 21a which is a convex curved surface.
The swivel stage 14 can be swiveled in a horizontal plane, and the swivel plane is parallel to the incident direction of the gas cluster ion beam 10 emitted from the aperture 22 in the horizontal direction.

  A Z-axis stage 15 that can be controlled to advance and retreat in the incident direction of the gas cluster ion beam 10 is fixed on the swivel stage 14, and further on the Z-axis stage 15 in a plane parallel to the swivel plane of the swivel stage 14. An X-axis stage 16 that can be advanced and retracted in a direction orthogonal to the Z-axis is fixed.

A Y-axis stage 18 that can be controlled to advance and retreat in a direction perpendicular to the XZ plane is fixed to the X-axis stage 16 via a Y-axis stage bracket 17.
The Y-axis stage 18 is used for alignment of the beam axis center of the gas cluster ion beam 10 and the rotation center of the workpiece 21 in the Y-axis direction, and may be a manual stage. A spindle bracket 19 is fixed to the Y-axis stage 18, and a spindle 20 capable of rotating the workpiece 21 is fixed to the spindle bracket 19.

  Further, the posture control device 13 of the workpiece 21 composed of these components is controlled by a control unit 102 connected to a control terminal 101 such as a personal computer that performs calculation, creation of a machining control program 103, and the like.

In the control terminal 101, program creation software 101a having a function of creating the machining control program 103 is installed.
The control unit 102 controls the operation of the posture control device 13 by executing the machining control program 103 created by the control terminal 101, and the workpiece 21 held in the posture control device 13 will be described later. Correct attitude control.

  The control unit 102 includes a numerical control device (NC device) including a microcomputer (not shown), for example, and the machining control program 103 is a numerical control program created by the control terminal 101, for example.

[Action]
Since the workpiece 21 in the present embodiment has a rotational axis symmetrical shape, the irradiation position of the gas cluster ion beam 10 moves relatively on the meridian of the workpiece surface 21a of the workpiece 21 on which the gas cluster ion beam 10 rotates, and the target It is assumed that the attitude control is performed so that the gas cluster ion beam 10 is always irradiated from the vertical direction to the processing point Q.

In addition, it is assumed that the positions in the Y-axis direction between the beam axis center of the gas cluster ion beam 10 and the rotation center of the workpiece 21 are matched in advance.
In the case of the present embodiment, the distance L 0 between the turning center O of the turning stage 14 and the acceleration electrode 9 in the attitude control device 13 (the range of the gas cluster ion beam 10 from the acceleration electrode 9 to the turning center O). ) Is constant.

Next, an attitude control method when irradiating the processing point Q on the workpiece 21 with the gas cluster ion beam 10 will be described.
Specifically, as illustrated in FIG. 4, first, the turning center O of the turning stage 14 and the workpiece 21 when the turning stage 14, the Z-axis stage 15, and the X-axis stage 16 are at the respective origin positions. The distance Xe in the X-axis direction and the distance Ze in the Z-axis direction with respect to the processing surface origin (that is, the apex P) are grasped.

As illustrated in FIG. 3, the radial coordinate, the rotational axis direction coordinate, and the tilt angle (Xw, Zw, θw) of the processing point Q are calculated from the design formula representing the shape of the workpiece 21.
Then, as illustrated in FIG. 5, by moving the X-axis coordinate, the Z-axis coordinate, and the turning angle (X, Z, θ) of the attitude control device 13 to the position of (Xe + Xw, Ze−Zw, θw). The machining point Q coincides with the turning center O of the turning stage 14, and the normal line of the machining point Q coincides with the beam axis of the gas cluster ion beam 10.

  The above coordinate calculation is performed at a desired interval over the entire machining range of the workpiece 21 to create a machining control program 103, and the attitude control device 13 is controlled by a command from the control unit 102 that executes the machining control program 103. The posture of the workpiece 21 is controlled.

  That is, when the control unit 102 performs the posture control of the workpiece 21 held by the posture control device 13 during machining by executing the machining control program 103, the machining point Q on the workpiece 21 is always set to the machining point Q. Since the gas cluster ion beam 10 is irradiated vertically and the processing point Q always coincides with the turning center O of the turning stage 14, the processing position in the irradiation direction of the gas cluster ion beam 10 (the flight of the gas cluster ion beam 10) Is controlled at a constant distance L0 from the acceleration electrode 9 to the turning center O.

  Further, in the control of the posture control device 13 during processing by the processing control program 103, the moving (feed) speed of the workpiece 21, in other words, the irradiation time of the gas cluster ion beam 10 at each processing point Q is as described above. Perform according to equation (1).

  When removing the entire surface 21a of the workpiece 21 evenly, a machining control program 103 is created so that the irradiation time of the gas cluster ion beam 10 at each machining point Q is constant, The feed speed of the workpiece 21 by the control device 13 is controlled.

  FIG. 6 is a flowchart showing an example of the operation of the program creation software 101a executed by the control terminal 101 in order to generate the machining control program 103 according to the first embodiment.

  First, input of design data of the shape of the workpiece 21 such as the workpiece surface 21 a is received (step 151), and the workpiece 21 held by the turning center O of the posture control device 13 and the posture control device 13. An input of distance Xe and distance Ze with respect to the origin (vertex P in this case) is accepted (step 152).

  Thereafter, an arbitrary processing point Q on the processing surface 21a of the workpiece 21 is selected (step 153), and the movement coordinates (Xw) to the processing position that makes this processing point Q directly face the gas cluster ion beam 10 in the incident direction. , Zw, θw) is calculated (step 154).

  Further, in the present embodiment, the above-mentioned movement coordinates are corrected so that the machining point Q coincides with the turning center O located at a distance L0 from the acceleration electrode 9, and output as (Xe + Xw, Ze−Zw, θw). To do. Similarly, information on irradiation time (feed speed) at the processing point Q is also output (step 155).

  After the processing from step 153 to step 155 has been executed for all machining points Q (step 156), it is output as a machining control program 103 that realizes a machining locus of (Xe + Xw, Ze−Zw, θw) (step 157). ).

  The machining control program 103 generated in this way is transferred to the control unit 102, and the control unit 102 executes the machining control program 103 to control the posture control device 13, whereby the workpiece 21 is processed as described above. The operation of controlling the posture of the workpiece 21 is realized so that an arbitrary machining point Q always coincides with the turning center O at a certain distance L0 from the acceleration electrode 9 during machining.

[effect]
According to the first embodiment, the distance between the acceleration electrode 9 of the gas cluster ion beam processing apparatus 100 and the processing point Q of the workpiece 21 can be kept constant at the distance L0 during processing. Variation in irradiation energy density due to variation in the range of the ion beam 10 with respect to the workpiece 21 is prevented, and the irradiation energy density of the gas cluster ion beam 10 at the processing point Q is a value corresponding to the range of the distance L0. Since the workpiece surface 21a of the workpiece 21 is uniformly removed, the workpiece surface 21a of the workpiece 21 is flattened with high accuracy while maintaining the shape accuracy of the workpiece 21. Processing can be performed.

That is, it is possible to improve the processing accuracy of the workpiece 21 when processing while relatively changing the irradiation position of the gas cluster ion beam 10 with respect to the workpiece 21.
[Embodiment 2]
7, 8, 9, and 10 are diagrams for explaining the operation of the gas cluster ion beam processing method and the processing control program according to another embodiment of the present invention.
[Constitution]
The configuration of the gas cluster ion beam processing apparatus 100 of the second embodiment is the same as that of the first embodiment described above, but the aperture 22a of the aperture 22 has a desired surface according to the shape of the workpiece 21. The gas cluster ion beam 10 is irradiated only in a range where the roughness can be obtained, and the beam diameter is set such that the shape of the workpiece 21 can be corrected.

[Action]
In the second embodiment, first, the relationship between the distance L between the acceleration electrode 9 and the processing point of the gas cluster ion beam processing apparatus 100 and the removal amount r per unit irradiation time t is ascertained through preliminary experiments. As the L-r data 110 illustrated in FIG. 7, a graph, an approximate expression, or a data table is prepared.

FIG. 8 is a graph of data (Lr data 110) when the machining amount of the workpiece 21 is actually measured when the distance between the acceleration electrode 9 and the workpiece 21 is changed. .
The irradiation conditions at this time were an acceleration voltage of 20 kV, an ionization current of 300 mA, an ionization voltage of 300 V, and an irradiation time of 60 minutes, and the material of the workpiece 21 was silicon.

Next, the displacement of the workpiece 21 on the meridian is measured, and error data with respect to the target shape is obtained from the measured value. An example of the obtained error data 120 is shown in FIG.
Then, the irradiation time (unit irradiation time t) is adjusted so that the difference Δr between the maximum removal amount and the minimum removal amount in the L-r data 110 of FIG. 7 is larger than the PV value Δe of the error data 120. The removal amount distribution in FIG. 7 is doubled (normalized). The unit irradiation time at this time is assumed to be t ′. The result of normalizing the L-r data 110 in FIG. 7 is normalized L-r data 110A illustrated in FIG.

9 is corrected by adding a constant δ to data obtained by inverting the sign of the error data 120 in FIG. 9 (the removal amount (processing amount) per unit time is inversely proportional to the distance L). The removal amount R (X) at each machining point (X) necessary for the calculation is calculated as error correction machining data 120A. Here, the constant δ is such that the maximum value e _max and the minimum value e _min of the removal amount R (X) fall within the removal amount distribution range (Δr ′) of the normalized L-r data 110A in FIG. Set to.

  FIG. 10B shows error correction processing data 120A obtained in this way. The error correction processing data 120A in FIG. 10B corresponds to the radial position (processing point (X)) of the workpiece 21 set on the horizontal axis and the processing point (X) set on the vertical axis. It is a curve which shows the relationship with the removal amount R (X) which performed.

As described above, the distance L between the acceleration electrode 9 and the machining point when the removal amount R (X) at each machining point X is obtained is obtained.
That is, from the removal amount R (X) corresponding to an arbitrary processing point (X) obtained in the error correction processing data 120A of FIG. 10B, the normalized L-r data 110A of FIG. 10A is used. The distance L (range of the gas cluster ion beam 10) corresponding to the removal amount R (X) can be determined.

  Thereafter, the distance (range) in the beam axis direction of the gas cluster ion beam 10 (in this case, the distance between the acceleration electrode 9 and the processing point (X) of the workpiece 21) corresponds to the removal amount R (X). Then, while controlling the distance L obtained as described above, the movement (feed speed) of the workpiece 21 so that the irradiation time at each processing point Q (processing point (X)) is constant at t ′. By controlling the above, the shape of the work surface 21a of the work piece 21 is corrected.

  In this case, since the machining locus of the workpiece 21 includes the distance L with respect to the acceleration electrode 9, based on the case of the above-described first embodiment, the X-axis coordinates of the attitude control device 13 that holds the workpiece 21, This is realized by moving the Z-axis coordinates and the turning angle (X, Z, θ) to the positions of (Xe + Xw + (L−L0) · sin θw, Ze−Zw + (L−L0) · cos θw, θw).

  FIG. 11 is a flowchart showing an example of the operation of the program creation software 101a executed by the control terminal 101 in order to generate the machining control program 103 that realizes the control of the attitude control device 13 in the second embodiment. .

The input of the L-r data 110 is accepted (step 161), and further the input of the error data 120 is accepted (step 162).
Then, the Lr data 110 is normalized according to the range of the error data 120 to generate the error data 120 (step 163).

Further, error correction processing data 120A is generated for the error data 120 input in step 162 by sign inversion and addition of a constant δ (step 164).
Next, using the error correction machining data 120A and the normalized Lr data 110A, a machining locus (Xe + Xw + (Xe + Xw + () that changes the distance L corresponding to the removal amount R (X) of the machining point X (machining point Q)). (L−L0) · sin θw, Ze−Zw + (L−L0) · cos θw, θw) is generated (step 165).

  The machining control program 103 generated in this way is transferred to the control unit 102, and the control unit 102 executes the machining control program 103 and controls the attitude control device 13, for example, as described above. The operation of controlling the position of the workpiece 21 so as to change the distance L corresponding to the removal amount R (X) of the machining point X (machining point Q) at a speed is realized.

[effect]
According to the second embodiment, the distance between the acceleration electrode 9 from which the gas cluster ion beam 10 of the gas cluster ion beam processing apparatus 100 is emitted and the processing point Q of the workpiece 21 is the processing point Q. By variably controlling in accordance with the necessary removal amount (R), it is possible to obtain a smooth surface with a small surface roughness while efficiently correcting the shape of the workpiece.

  In other words, by changing the range (distance L) of the gas cluster ion beam 10 to the workpiece 21 in accordance with the removal amount R at the machining point Q of the workpiece 21, the machining capability is controlled by changing the range. It is possible to process the workpiece 21 at a relatively large value at a relatively high feed rate, thereby shortening the entire processing time required for the workpiece 21.

  As described above, according to each embodiment of the invention, the range (distance L) of the gas cluster ion beam 10 from the acceleration electrode 9 to the processing point Q of the workpiece 21 in the gas cluster ion beam processing apparatus 100. Can be controlled stably or variably, the amount of machining in the workpiece 21 can be controlled stably, so that the workpiece 21 has a smooth surface with high shape accuracy and very good surface roughness. Obtainable.

For example, when used for a workpiece 21 such as an imaging lens, it is possible to improve the image quality and contribute to the improvement of the quality of products such as optical devices.
Needless to say, the present invention is not limited to the configuration exemplified in the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.

The generation part that becomes the starting point of the range of the gas cluster ion beam is not limited to the acceleration electrode 9 and may be other components such as the aperture 22 and the extraction electrode 8.
Further, the present invention can be applied not only to the gas cluster ion beam but also to processing using a general charged particle beam.
[Appendix 1]
In a removal processing method using a gas cluster ion beam performed while controlling the posture of the workpiece so that the gas cluster ion beam is irradiated perpendicularly to a target processing position of the workpiece, A processing method using a gas cluster ion beam, wherein a distance between an acceleration electrode of a beam device and a target processing position of the workpiece is kept constant during processing.
[Appendix 2]
In a removal processing method using a gas cluster ion beam performed while controlling the posture of the workpiece so that the gas cluster ion beam is irradiated perpendicularly to a target processing position of the workpiece, A required removal amount for each processing position of the workpiece is calculated from the difference between the shape data of the workpiece and the target shape data, and the acceleration electrode of the gas cluster ion beam apparatus and the workpiece according to the required removal amount A processing method using a gas cluster ion beam, wherein a distance from a target processing position on an object is controlled during processing.

It is a conceptual diagram which shows an example of a structure of the gas cluster ion beam processing apparatus which enforces the gas cluster ion beam processing method which is one embodiment of this invention. It is a perspective view which shows an example of the structure of the attitude | position control apparatus which comprises the gas cluster ion beam processing apparatus which is one embodiment of this invention. It is explanatory drawing which shows an example of an effect | action of the gas cluster ion beam processing method and apparatus which are one embodiment of this invention. It is explanatory drawing which shows an example of an effect | action of the gas cluster ion beam processing method and apparatus which are one embodiment of this invention. It is explanatory drawing which shows an example of an effect | action of the gas cluster ion beam processing method and apparatus which are one embodiment of this invention. It is a flowchart which shows an example of an effect | action of the gas cluster ion beam processing method and apparatus which are one embodiment of this invention. It is a diagram explaining the effect | action of the gas cluster ion beam processing method and processing control program which are other embodiment of this invention. It is a diagram explaining the effect | action of the gas cluster ion beam processing method and processing control program which are other embodiment of this invention. It is a diagram explaining the effect | action of the gas cluster ion beam processing method and processing control program which are other embodiment of this invention. It is a diagram explaining the effect | action of the gas cluster ion beam processing method and processing control program which are other embodiment of this invention. It is a flowchart which shows an example of an effect | action of the gas cluster ion beam processing method and apparatus which are other embodiment of this invention. It is a conceptual diagram which shows the structure of the gas cluster ion beam processing apparatus of a prior art. It is explanatory drawing which shows the attitude | position control of the workpiece in the gas cluster ion beam processing apparatus of a prior art.

Explanation of symbols

1 Source chamber 2 Main chamber 3 Exhaust pump 4 Exhaust pump 5 Nozzle 6 Skimmer 7 Tungsten filament 8 Extraction electrode 9 Accelerating electrode 10 Gas cluster ion beam 11 Gas cylinder 12 Base 13 Attitude control device 14 Swivel stage 15 Z-axis stage 16 X-axis stage 17 Y-axis stage bracket 18 Y-axis stage 19 Spindle bracket 20 Spindle 21 Work piece 21a Work surface 22 Aperture 22a Opening portion 100 Gas cluster ion beam processing apparatus 101 Control terminal 101a Program creation software 102 Control unit 103 Processing control program 110 L- r data 110A normalized Lr data 120 error data 120A error correction machining data L distance L0 from acceleration electrode 9 to machining point Q of workpiece 21 Acceleration Distance from electrode 9 to the turning center O of the attitude control system 13

Claims (12)

A gas cluster ion beam processing method in which a workpiece is irradiated with a gas cluster ion beam and processed.
A gas cluster ion beam processing method, wherein a distance between a generation portion of the gas cluster ion beam and a processing position of the workpiece is kept constant during processing. In the gas cluster ion beam processing method according to claim 1,
The gas cluster ion beam processing method according to claim 1, wherein the distance is a distance between an accelerating electrode constituting the generating portion and the processing position of the workpiece. In the gas cluster ion beam processing method according to claim 1 or 2,
A gas cluster ion beam machining method, comprising: controlling an attitude of the workpiece so that the gas cluster ion beam is irradiated perpendicularly to the machining position of the workpiece. A gas cluster ion beam processing method in which a workpiece is irradiated with a gas cluster ion beam and processed.
Determining a machining amount at a machining position of the workpiece;
Changing the distance between the gas cluster ion beam generator and the processing position during processing according to the processing amount at the processing position;
A gas cluster ion beam processing method comprising: In the gas cluster ion beam processing method according to claim 4,
The gas cluster ion beam processing method according to claim 1, wherein the distance is a distance between an accelerating electrode constituting the generating portion and the processing position of the workpiece. In the gas cluster ion beam processing method according to claim 4 or 5,
A gas cluster ion beam machining method, comprising: controlling an attitude of the workpiece so that the gas cluster ion beam is irradiated perpendicularly to the machining position of the workpiece. A generator for generating a gas cluster ion beam;
An attitude control device for controlling the relative attitude of the workpiece with respect to the gas cluster ion beam;
A computer for controlling the attitude control device;
A processing control program for a gas cluster ion beam processing apparatus including:
A machining control program for causing the computer to realize a function of controlling the posture control device so as to keep a constant distance between the generating unit and a machining position of the workpiece during machining. In the machining control program according to claim 7,
The said distance is a distance of the acceleration electrode which comprises the said generation | occurrence | production part, and the processing position of the said workpiece, The processing control program characterized by the above-mentioned. In the machining control program according to claim 7 or claim 8,
Further, the processing control program for causing the computer to realize a function of controlling the attitude control device so that the gas cluster ion beam is irradiated perpendicularly to the processing position of the workpiece. . A generator for generating a gas cluster ion beam;
An attitude control device for controlling the relative attitude of the workpiece with respect to the gas cluster ion beam;
A computer for controlling the attitude control device;
A processing control program for a gas cluster ion beam processing apparatus including:
The computer has a function of controlling the attitude control device so that the distance between the gas cluster ion beam generator and the processing position is changed during processing according to the processing amount at the processing position of the workpiece. A machining control program characterized in that In the machining control program according to claim 10,
The said distance is a distance of the acceleration electrode which comprises the said generation | occurrence | production part, and the processing position of the said workpiece, The processing control program characterized by the above-mentioned. In the machining control program according to claim 10 or 11,
Further, the processing control program for causing the computer to realize a function of controlling the attitude control device so that the gas cluster ion beam is irradiated perpendicularly to the processing position of the workpiece. .