JP2009185350A - Sputtering apparatus and film forming method - Google Patents

Abstract

A sputtering apparatus and a film forming method capable of reliably separating the atmosphere by preventing the inflow of reaction gas and the like between a plurality of sputtering chambers having different sputtering atmospheres while simplifying the configuration and reducing the manufacturing cost. provide.
An atmosphere separating unit is formed between adjacent sputtering chambers, and a cross section perpendicular to the substrate W transporting direction in the atmosphere separating unit is transported of the substrate in the adjacent sputtering chambers. The atmosphere separation unit 40 is provided with a plurality of gas discharge units 42 for discharging an inert gas used in the adjacent sputtering chambers 13 and 14. 14 is provided on the opposite side of the atmosphere separation unit 40 with an exhaust means for exhausting the adjacent sputtering chambers 13 and 14 interposed therebetween.
[Selection] Figure 1

Description

  The present invention relates to a sputtering apparatus and a film forming method.

Conventionally, in a liquid crystal display (LCD), a plasma display (PDP), a solar cell, etc., a thin film such as a transparent conductive film is continuously formed on a large area glass substrate with a uniform film quality on the entire surface of the substrate. For this reason, various sputtering apparatuses have been proposed.
One type of these sputtering apparatuses is an in-line type sputtering apparatus. This apparatus arranges the target in the sputtering chamber, supplies an inert gas (sputtering gas) such as argon into the sputtering chamber, and transports the substrate at a constant speed along the target arrangement direction. This is an apparatus for forming a desired thin film on a substrate by depositing the struck film forming material on the substrate. According to this configuration, a thin film having a uniform thickness can be continuously formed on a large-area glass substrate.

  By the way, in the in-line type sputtering apparatus described above, a configuration is known in which two types of thin films are continuously formed on a substrate by connecting two sputtering chambers having different sputtering atmospheres. Specifically, one of the two sputtering chambers performs reactive sputtering by supplying a reactive gas such as oxygen in addition to the inert gas, and the other sputtering chamber supplies only the inert gas. By doing so, the structure is such that normal metal sputtering is performed.

  Here, when connecting sputtering chambers having different sputtering atmospheres, it is important to separate the atmospheres between the sputtering chambers so that gases other than the inert gas (for example, reactive gas) do not flow into the other sputtering chambers. is there. As a connection between two sputtering chambers, for example, a configuration in which an isolation vacuum chamber is provided between the sputtering chambers is known.

FIG. 3 is a schematic configuration diagram showing a conventional isolation vacuum chamber.
As shown in FIG. 3, the sputtering apparatus 100 includes an upstream sputtering chamber 101 in which, for example, reactive sputtering is performed, an isolation vacuum chamber 102, and a downstream sputtering chamber 103 in which, for example, metal sputtering is performed. The isolation vacuum chamber 102 includes three chambers, an upstream sputter outlet chamber 104, an isolation chamber 105, and a downstream sputter inlet chamber 106. The chambers 104 to 106 are connected via gate valves 108 and 109. Yes. The isolation chamber 105 is provided with a vacuum exhaust means 107 that exhausts the inside of the isolation chamber 105.
According to this configuration, the substrate W on which reactive sputtering has been performed in the upstream sputtering chamber 101 is first transported into the upstream sputtering outlet chamber 104 of the isolation vacuum chamber 102. Next, the gate valve 108 is opened, the substrate W is transferred into the isolation chamber 105, and the gate valve 108 is closed. Then, the gas diffusing from the upstream sputtering chamber 101 is removed by evacuating the isolation chamber 105 by the vacuum exhaust means 107 and exhausting the gas (sputtering gas and reaction gas) existing in the isolation chamber 105. . Thereafter, the gate valve 109 on the downstream sputtering inlet chamber 106 side is opened, the substrate W is transferred into the downstream sputtering chamber 103, and metal sputtering is performed in the downstream sputtering chamber 103.

For example, as shown in Patent Document 1, a pressure stage is provided between one cathode and the other cathode, and in addition to the sputtering gas in the compartments of both cathodes, sputtering in the compartments between the cathodes is performed. A configuration is also known in which the gas pressure is adjusted differently.
Japanese Patent Laid-Open No. 9-170080

However, the above-described sputtering apparatus has the following problems.
First, in the former configuration, as shown in FIG. 3, it is necessary to provide an isolation vacuum chamber 102 having a three-chamber configuration as described above in order to separate the atmosphere between the two sputtering chambers 101 and 103. There is a problem that it becomes complicated and increases costs. Further, the substrate W formed in the upstream sputtering chamber 101 is transferred to the isolation chamber 105 of the isolation vacuum chamber 102, the transfer of the substrate W is stopped, the inside of the isolation chamber 105 is evacuated, and then the substrate W is transferred again. Therefore, there is a problem that the manufacturing efficiency is lowered.
On the other hand, in the latter configuration, there is a problem that the atmosphere separation between the respective compartments is insufficient and the inflow of the reaction gas from one compartment to the other compartment cannot be prevented. When a reactive gas such as O ₂ flows into a sputtering chamber that uses only an inert gas, the process conditions change, such as oxidation of a thin film formed in the sputtering chamber and an increase in resistance.

  Therefore, the present invention has been made to solve the above-described problems, and in a simplified configuration and reduced manufacturing cost, inflow of a reaction gas or the like between a plurality of sputtering chambers having different sputtering atmospheres. An object of the present invention is to provide a sputtering apparatus and a film forming method capable of preventing and reliably performing atmosphere separation.

In order to solve the above-described problems, a sputtering apparatus of the present invention includes a target including a film forming material, and a transport unit that transports the substrate while arranging the surface of the target and the surface of the substrate substantially in parallel. In a sputtering apparatus in which a plurality of sputtering chambers having a plurality of sputtering chambers are formed and the substrate is sequentially transferred to the plurality of sputtering chambers and continuously sputtered on the substrate, an atmosphere is provided between adjacent sputtering chambers. A separation section is formed, and a cross section perpendicular to the substrate transport direction in the atmosphere separation section is formed smaller than a cross section perpendicular to the substrate transport direction in the adjacent sputtering chamber; A plurality of gas discharge portions for discharging a sputtering gas used in the adjacent sputtering chamber are provided, and opposite to the atmosphere separation portion with the adjacent sputtering chamber interposed therebetween. To is characterized in that the exhaust means for performing exhaust of said neighboring sputter chamber.
According to this configuration, the cross section perpendicular to the substrate transfer direction in the atmosphere separation unit is formed smaller than the cross section perpendicular to the substrate transfer direction in the sputtering chamber, and the gas separation unit is provided in the atmosphere separation unit. In the vicinity of the gas discharge part, the pressure locally increases, and a pressure gradient can be formed such that the pressure decreases from the gas discharge part toward each sputtering chamber. As a result, the sputtering gas discharged from the gas discharge section diffuses toward each sputtering chamber, so that the conductance between the sputtering chambers increases and the flow of gas from each sputtering chamber to the atmosphere separation section can be regulated. it can. Therefore, it is possible to prevent the gas staying in one sputtering chamber from flowing into the other sputtering chamber.
Further, since the vacuum exhaust means is provided on the opposite side of the atmosphere separation section across the sputtering chamber, the inert gas discharged from the gas discharge section is guided to diffuse in the direction from the atmosphere separation section toward each sputtering chamber. be able to. Thereby, since atmosphere separation of each sputtering chamber can be performed reliably, thin films having different compositions can be continuously formed on the substrate with excellent film characteristics.
In addition, since the sputtering gas used in each sputtering chamber is discharged from the gas discharge portion, the sputtering gas flows into each sputtering chamber, so that it can be used for the film forming process in each sputtering chamber. Therefore, it is not necessary to evacuate the isolation vacuum chamber as in the conventional case, and the manufacturing cost can be reduced.
As described above, the configuration can be simplified, the manufacturing cost can be reduced, and the conveyance of the substrate can be stopped as compared with the conventional configuration in which a three-chamber isolation vacuum chamber is provided between the sputtering chambers. Since it is not necessary, manufacturing efficiency can be improved. Then, it is possible to prevent the reaction gas from flowing from one sputtering chamber to the other sputtering chamber, and to reliably separate the atmosphere between the sputtering chambers.

In at least one of the sputtering chambers, reactive sputtering is performed by introducing a reactive gas.
According to this configuration, it is possible to continuously form thin films having different compositions on the substrate after separating the atmosphere between the sputtering chambers.

Further, the plurality of gas discharge portions are arranged on the front and back sides of the substrate in the atmosphere separation portion.
According to this configuration, it is possible to reliably form a pressure gradient such that the pressure decreases toward the respective sputtering chambers on the front and back sides of the substrate, so that from the respective sputtering chambers to the atmosphere separation portion on the front and back sides of the substrate. It is possible to regulate the flow of gas that goes. Therefore, for example, the atmosphere separation can be more effectively performed as compared with a configuration in which the gas discharge unit is disposed only on one side of the substrate.

On the other hand, in the film forming method of the present invention, a sputtering chamber having a target provided with a film forming material, and a transport means for transporting the substrate while arranging the surface of the target and the surface of the substrate substantially in parallel, A film forming method in which a plurality of layers are formed, and the substrate is sequentially transferred to the plurality of sputtering chambers, and the substrate is continuously sputtered on the substrate, and an atmosphere separation unit is provided between the adjacent sputtering chambers. And the cross section perpendicular to the substrate transport direction in the atmosphere separation unit is formed to be smaller than the cross section perpendicular to the substrate transport direction in the adjacent sputtering chamber. The sputtering gas used in the above is discharged, and the adjacent sputtering chamber is evacuated from the opposite side of the atmosphere separation section across the adjacent sputtering chamber.
According to this configuration, in the atmosphere separation unit in which the cross section perpendicular to the substrate transport direction is smaller than the cross section perpendicular to the substrate transport direction in the sputtering chamber, the sputtering gas is directed toward the direction intersecting the substrate transport direction. By discharging the pressure, it is possible to form a pressure gradient in which the pressure locally increases in the vicinity of the gas discharge portion, and the pressure decreases as it moves from the gas discharge portion to each sputtering chamber. As a result, the sputtering gas discharged from the gas discharge section diffuses toward each sputtering chamber, so that the conductance between the sputtering chambers increases and the flow of gas from each sputtering chamber to the atmosphere separation section can be regulated. it can. Therefore, it is possible to prevent the gas staying in one sputtering chamber from flowing into the other sputtering chamber.
Further, by performing evacuation from the opposite side of the atmosphere separation unit across the sputtering chamber, the inert gas discharged from the gas discharge unit is guided to diffuse in the direction from the atmosphere separation unit toward each sputtering chamber. be able to. Thereby, since atmosphere separation of each sputtering chamber can be performed reliably, thin films having different compositions can be continuously formed on the substrate with excellent film characteristics.
Moreover, since the gas discharged from the atmosphere separation unit is a sputtering gas used in each sputtering chamber, the sputtering gas flows into each sputtering chamber, so that it can be used for a film forming process in each sputtering chamber. is there. Therefore, it is not necessary to evacuate the isolation vacuum chamber as in the conventional case, and the manufacturing cost can be reduced.
As described above, the configuration can be simplified, the manufacturing cost can be reduced, and the conveyance of the substrate can be stopped as compared with the conventional configuration in which a three-chamber isolation vacuum chamber is provided between the sputtering chambers. Since it is not necessary, manufacturing efficiency can be improved. Then, it is possible to prevent the reaction gas from flowing from one sputtering chamber to the other sputtering chamber, and to reliably separate the atmosphere between the sputtering chambers.

According to the present invention, the cross section perpendicular to the substrate transport direction in the atmosphere separation unit is formed smaller than the cross section perpendicular to the substrate transport direction in the sputtering chamber, and the gas separation unit is provided in the atmosphere separation unit, It is possible to form a pressure gradient in which the pressure locally increases in the vicinity of the gas discharge unit and decreases as the gas discharge unit moves toward each sputtering chamber. As a result, the sputtering gas discharged from the gas discharge section diffuses toward each sputtering chamber, so that the conductance between the sputtering chambers increases and the flow of gas from each sputtering chamber to the atmosphere separation section can be regulated. it can. Therefore, it is possible to prevent the gas staying in one sputtering chamber from flowing into the other sputtering chamber.
Further, since the vacuum exhaust means is provided on the opposite side of the atmosphere separation section across the sputtering chamber, the inert gas discharged from the gas discharge section is guided to diffuse in the direction from the atmosphere separation section toward each sputtering chamber. be able to. Thereby, since atmosphere separation of each sputtering chamber can be performed reliably, thin films having different compositions can be continuously formed on the substrate with excellent film characteristics.
In addition, since the sputtering gas used in each sputtering chamber is discharged from the gas discharge portion, the sputtering gas flows into each sputtering chamber, so that it can be used for the film forming process in each sputtering chamber. Therefore, it is not necessary to evacuate the isolation vacuum chamber as in the conventional case, and the manufacturing cost can be reduced.
As described above, the configuration can be simplified, the manufacturing cost can be reduced, and the conveyance of the substrate can be stopped as compared with the conventional configuration in which a three-chamber isolation vacuum chamber is provided between the sputtering chambers. Since it is not necessary, manufacturing efficiency can be improved. Then, it is possible to prevent the reaction gas from flowing from one sputtering chamber to the other sputtering chamber, and to reliably separate the atmosphere between the sputtering chambers.

Next, a sputtering apparatus and a film forming method according to an embodiment of the present invention will be described with reference to FIGS.
(Sputtering equipment)
FIG. 1 is a schematic configuration diagram (side view) of a sputtering apparatus in the present embodiment.
As shown in FIG. 1, the sputtering apparatus 10 is an inline-type sputtering apparatus that horizontally holds and transports a substrate W, and includes an inlet chamber 11 for the substrate W, a first sputtering chamber 13, an atmosphere separation unit 40, and the like. The second sputtering chamber 14 and the outlet chamber 12 are provided so that they can communicate with each other. A plurality of transport rollers (transport means) 15 are arranged in the sputtering apparatus 10 along the transport direction of the substrate W (the direction of arrow F in FIG. 1). The rotation axis of the conveyance roller 15 is arranged so as to be orthogonal to the conveyance direction of the substrate W, and a plurality of roller bodies 16 are arranged along the conveyance direction of the substrate W on the rotation axis. Then, the substrate W held on the roller body 16 is transported by rotating the rotation shaft. In the sputtering apparatus 10 of the present embodiment, the substrate W is transported while being held horizontally. Note that the substrate W in the present embodiment is a large substrate made of quartz, resin, glass, or the like, for example, 1100 mm × 1300 mm, and is transported with its short side direction aligned with the transport direction.

The inlet chamber 11 includes a vacuum exhaust means 17 such as a turbo molecular pump. The evacuation unit 17 performs evacuation in the inlet chamber 11 and in the first sputtering chamber 13 communicating with the inlet chamber 11, and the substrate W is transferred into the evacuated inlet chamber 11.
The first sputter chamber 13 has an opening formed in a rectangular shape, and a plurality of sputter cathode mechanisms 20 (for example, two in FIG. 1) are provided on the ceiling side in the first sputter chamber 13 in parallel with the surface of the substrate W. ) Is arranged.

The sputter cathode mechanism 20 includes a target 22 and an adhesion preventing member 24.
The target 22 has a rectangular shape in plan view, and a plurality of targets 22 are arranged such that the short direction thereof coincides with the transport direction of the substrate W. That is, the substrate W is transported along the array direction of the targets 22 by the transport means. Each target 22 is disposed to face the substrate W with a predetermined interval between the surface thereof and the surface of the substrate W.
When the transparent electrode of the solar cell is formed in the first sputtering chamber 13, the target 22 of the first sputtering chamber 13 includes a ZnO-based film forming material that becomes a transparent electrode. In addition to the ZnO film forming material, an ITO film or SnO ₂ film forming material may be provided.

  The target 22 is bonded to the back plate 26 with a brazing material. The target 22 is connected to an external power source (power source) via the back plate 26 and is held at a negative potential. Outside the first sputtering chamber 13, a magnetic circuit (not shown) that generates a horizontal magnetic field on the surface of the target 22 is disposed along the back surface of the back plate 26.

  The adhesion preventing member 24 is an L-shaped member facing the side, and is provided so as to surround both sides along the longitudinal direction of each target 22. Accordingly, the targets 22 are blocked by the adhesion preventing member 24. The deposition preventing member 24 regulates the scattering range of the particles struck out from the target 22 and prevents the particles from adhering to locations other than the surface of the substrate W (for example, the wall surface of the first sputter chamber 13). It is. Further, the incident angle of the particles with respect to the substrate W is limited to a predetermined angle range.

A first gas supply means 27 is connected to each sputtering cathode mechanism 20 in the vicinity of the target 22 and inside the adhesion preventing member 24. The first gas supply means 27 supplies an inert gas (sputtering gas) such as Ar or a reactive gas such as O ₂ to the first sputtering chamber 13.

  On the other hand, the second sputtering chamber 14 is connected to the first sputtering chamber 13 via an atmosphere separation unit 40 described later. Since the second sputtering chamber 14 has substantially the same configuration as the first sputtering chamber 13 described above, the same reference numerals are given to the same configuration as the first sputtering chamber 13 in the second sputtering chamber 14 and description thereof will be given. Omitted. Moreover, it is preferable that the film forming material of the target 22 in the second sputtering chamber 14 includes Ag or the like that becomes a reflective film.

In the vicinity of the target 22 in the second sputtering chamber 14 and surrounded by the deposition preventing member 24, second gas supply means 28 is connected corresponding to each sputtering cathode mechanism 20, and the second sputtering chamber 14. An inert gas such as Ar is supplied inward.
On the carry-out side of the second sputtering chamber 14, an outlet chamber 12 is provided in communication with the second sputtering chamber 14. The outlet chamber 12 is provided with a vacuum exhaust means 18 such as a turbo molecular pump, and the second sputtering chamber 14 is also evacuated by evacuating the outlet chamber 12.

  Thus, in the present embodiment, the first sputtering chamber 13 and the second sputtering chamber 14 are connected in a state where they are separated in different sputtering atmospheres (for example, a reactive sputtering atmosphere and a sputtering atmosphere), By transporting the substrate W through the sputtering chambers 13 and 14 having different sputtering atmospheres, thin films (for example, a ZnO film and an Ag film) having different compositions are continuously formed on the substrate W.

(Atmosphere separation part)
FIG. 2 is a perspective view of the atmosphere separation unit.
As shown in FIGS. 1 and 2, an atmosphere separation unit 40 is formed between the first sputtering chamber 13 and the second sputtering chamber 14. The cross section (opening cross section) orthogonal to the transport direction of the substrate W in the atmosphere separation unit 40 is formed smaller than the cross section orthogonal to the transport direction of the substrate W in each of the sputtering chambers 13 and 14 described above. It is formed in a rectangular shape with H being, for example, 0.15 m and width D being, for example, 1.7 m.

  In the atmosphere separation unit 40, a pair of rectifying blocks 45a and 45b made of aluminum or the like are disposed on the ceiling surface and the bottom surface. The rectifying blocks 45a and 45b have a rectangular parallelepiped shape, and a layered substrate transport path 46 is formed between the pair of rectifying blocks 45a and 45b. Specifically, the height of the substrate transfer path 46 is, for example, about 0.03 m, and the volume of the substrate transfer path 46 in the atmosphere separation unit 40 is 1/10 of the volume of the sputtering chambers 13 and 14 described above. It is formed to the extent. Here, the atmosphere separation unit 40 and the sputtering chambers 13 and 14 communicate with each other without interposing a gate valve therebetween.

  A plurality of transport roller accommodating portions 41 are formed in the rectifying block 45 a on the bottom surface side in the atmosphere separating unit 40 along the transport direction of the substrate W. The conveying roller accommodating portion 41 is formed by cutting the upper surface of the rectifying block 45a into a concave shape along the width direction of the atmosphere separating portion 40, and the conveying roller 15 described above is received in the conveying roller accommodating portion 41. Yes. Therefore, only the top (about 0.01 m) of the roller body 16 of the transport roller 15 protrudes from the upper surface of the rectifying block 45a on the bottom surface side of the atmosphere separation unit 40.

  A plurality of (for example, three) recesses 47 are formed in each of the rectifying blocks 45 a and 45 b of the atmosphere separation unit 40 along the transport direction of the substrate W. Each concave portion 47 is formed by cutting the facing surfaces of the respective rectifying blocks 45a and 45b along the width direction of the atmosphere separation unit 40, and is formed, for example, in the central portion of the atmosphere separation unit 40 in the transport direction of the substrate W. They are arranged every 75 mm. Further, the recesses 47 arranged on the ceiling surface side and the bottom surface side of the atmosphere separation unit 40 are opposed to each other in pairs, and are arranged so as to sandwich the substrate W from the front and back surfaces.

A tubular gas discharge portion 42 is accommodated in each recess 47. The gas discharge unit 42 discharges an inert gas such as Ar toward a direction orthogonal to the transport direction of the substrate W, that is, toward the front and back surfaces of the substrate W, and is illustrated along the width direction of the atmosphere separation unit 40. A plurality of discharge holes are formed.
A third gas supply unit 43 that supplies an inert gas to the gas discharge unit 42 is connected to the outside of the atmosphere separation unit 40, and the inert gas supplied from the third gas supply unit 43 discharges the gas. It is discharged from the discharge hole of the portion 42.

(Film formation method)
Next, a film forming method using the sputtering apparatus of this embodiment will be described with reference to FIG. In the present embodiment, a case where a ZnO film serving as a transparent electrode of a solar cell and an Ag film serving as a reflective film are continuously formed on the substrate W will be described.
First, a ZnO film is formed on the substrate W transferred from the inlet chamber 11 to the first sputtering chamber 13. Specifically, an inert gas and a reactive gas are supplied from the first gas supply means 27 into the first sputtering chamber 13, and the inert gas is simultaneously supplied from the gas discharge part 42 of the atmosphere separation part 40 as will be described later. Supply. Then, a sputtering voltage is applied to the target 22 from the external power source through the back plate 26. Then, the ions of the inert gas excited by the plasma in the first sputtering chamber 13 collide with the target 22 to eject particles of the film forming material of the ZnO film. Then, in the first sputtering chamber 13 of the present embodiment, the reaction gas such as O ₂ is also supplied from the first gas supply unit 27, so that the particles struck out from the target 22 and the reaction gas are combined, By attaching on the substrate W, a ZnO film is formed on the surface of the substrate W.

  Next, the substrate W is transferred to the second sputtering chamber 14 through the atmosphere separation unit 40, and an Ag film is formed on the substrate W. Specifically, an inert gas is supplied from the second gas supply means 28 into the second sputtering chamber 14, and a sputtering voltage is applied to the target 22 from the external power source via the back plate 26. Particles of the film forming material are knocked out, and an Ag film is formed on the substrate W. Thus, in the in-line type sputtering apparatus (sputtering apparatus 10), since the substrate W moves relative to the target 22, it is possible to form a film with uniform film quality on the entire surface of the substrate W. Further, in this embodiment, since the sputtering chambers 13 and 14 having different sputtering atmospheres are connected, thin films having different compositions can be continuously formed on the substrate W.

By the way, when connecting sputtering chambers having different sputtering atmospheres, it is important to separate the atmosphere so that a gas (for example, a reactive gas) other than an inert gas does not flow between the sputtering chambers. For example, when a reactive gas such as O ₂ flows into a sputtering chamber using only an inert gas, there is a problem that process conditions change, such as oxidation of a thin film formed in the sputtering chamber and an increase in resistance. is there.

  Therefore, in the present embodiment, the atmosphere separation between the first sputtering chamber 13 and the second sputtering chamber 14 is performed by the atmosphere separation unit 40 that connects the first sputtering chamber 13 and the second sputtering chamber 14. Specifically, the inert gas is discharged in a direction perpendicular to the transport direction of the substrate W from the discharge holes of the gas discharge unit 42 provided on the ceiling surface side and the bottom surface side of the atmosphere separation unit 40. At this time, the discharge amount of the inert gas discharged from the gas discharge unit 42 is preferably about 60 to 70% of the amount necessary for performing sputtering in each of the sputtering chambers 13 and 14. Accordingly, the remaining 30 to 40% of the inert gas necessary for performing sputtering in the sputtering chambers 13 and 14 is supplied from the first and second gas supply means 27 and 28 described above.

  In the atmosphere separation unit 40, the cross section perpendicular to the substrate W conveyance direction in the substrate conveyance path 46 is formed smaller than the cross section perpendicular to the substrate W conveyance direction in the sputtering chambers 13, 14. In the vicinity of the gas discharge portion 42, there is a region where the pressure is locally high. A pressure gradient is generated such that the pressure decreases from the vicinity of the gas discharge portion 42 of the atmosphere separation portion 40 toward the sputtering chambers 13 and 14. Here, since the volume of the substrate transfer path 46 in the atmosphere separation unit 40 is formed to be about 1/10 of the volume of the sputtering chambers 13 and 14, the pressure in the vicinity of the gas discharge unit 42 in the atmosphere separation unit 40 is increased by the sputtering. The pressure is about 10 times the pressure in the chambers 13 and 14. Thereby, the inert gas staying in the vicinity of the gas discharge part 42 diffuses toward the sputtering chambers 13 and 14.

  At this time, since the vacuum evacuation means 17 and 18 are provided on the opposite side of the atmosphere separation unit 40 with the sputtering chambers 13 and 14 interposed therebetween, the inert gas diffusing from the atmosphere separation unit 40 is supplied to the sputtering chambers 13 and 14. It becomes easy to guide towards. As described above, since the conductance between the sputtering chambers 13 and 14 is increased by the atmosphere separation unit 40, the other sputtering chamber (for example, the first sputtering chamber 13 (for example, the first sputtering chamber 13) through the atmosphere separation unit 40). The gas flow toward the second sputtering chamber 14) can be prevented.

Therefore, according to the present embodiment, by arranging the rectifying blocks 45a and 45b on the ceiling surface side and the bottom surface side of the atmosphere separating unit 40, a cross section perpendicular to the transport direction of the substrate W in the atmosphere separating unit 40 is sputtered. The chambers 13 and 14 are formed smaller than the cross section perpendicular to the transport direction of the substrate W, and the atmosphere separation unit 40 discharges an inert gas from the front and back surfaces of the substrate W toward the direction perpendicular to the transport direction of the substrate W. The gas discharge portion 42 is provided.
According to this configuration, since the pressure in the vicinity of the gas discharge unit 42 is locally increased by discharging the inert gas from the gas discharge unit 42 of the atmosphere separation unit 40, each sputter chamber 13 is connected to the sputter chamber 13. , 14, a pressure gradient can be formed so that the pressure decreases. As a result, the inert gas discharged from the gas discharge portion 42 diffuses toward the sputter chambers 13 and 14, so that the conductance between the sputter chambers 13 and 14 increases and the atmosphere is separated from the sputter chambers 13 and 14. The flow of gas toward the unit 40 can be prevented. Therefore, it is possible to prevent the gas staying in one sputtering chamber (for example, the first sputtering chamber 13) from flowing into the other sputtering chamber (for example, the second sputtering chamber 14) via the atmosphere separation unit 40. In particular, the reaction gas staying in the first sputtering chamber 13 can be prevented from flowing into the second sputtering chamber 14.

Further, the evacuation means 17 and 18 for evacuating the sputtering chambers 13 and 14 are provided on the opposite side of the atmosphere separation unit 40 with the sputtering chambers 13 and 14 interposed therebetween.
According to this configuration, the inert gas discharged from the gas discharge unit 42 can be guided so as to diffuse in the direction from the atmosphere separation unit 40 toward each of the sputtering chambers 13 and 14. Thereby, since atmosphere separation of each sputter | spatter chamber 13 and 14 can be performed reliably, the thin film from which a composition differs is excellent in a film | membrane characteristic, and can be formed on the board | substrate W continuously.

By the way, the above-described large-sized (for example, 1100 mm × 1300 mm) substrate W is continuously transferred into the layered substrate transfer path 46, and in this case, in the transfer direction in the substrate transfer path 46. The entire region is partitioned on the front and back sides of the substrate W. Therefore, for example, when the configuration in which the gas discharge unit is provided only on one surface (for example, the front surface) side of the substrate W is used, the inert gas discharged from the one surface side of the substrate W is There is a risk that it will not reach the other side (for example, the back side). As a result, it is difficult to form a pressure gradient from each of the sputtering chambers 13 and 14 toward the atmosphere separation unit 40 on the other surface side of the substrate W, and the reactive gas staying in the first sputtering chamber 13 enters the second sputtering chamber 14. There is a risk of inflow.
In contrast, in the present embodiment, the front and back surfaces of the substrate W are discharged by discharging the inert gas from the gas discharge portions 42 provided at the positions facing the rectifying blocks 45a and 45b toward the front and back surfaces of the substrate W. On the side, it is possible to reliably form a pressure gradient such that the pressure decreases toward the sputtering chambers 13 and 14. Therefore, the flow of gas from the sputtering chambers 13 and 14 toward the atmosphere separation unit 40 on the front and back sides of the substrate W can be prevented, and therefore, compared with a configuration in which an inert gas is introduced from one side of the substrate W. Effective atmosphere separation can be performed.

  In addition, since the inert gas used in each of the sputtering chambers 13 and 14 is discharged from the gas discharge portion 42, the inert gas flows into each of the sputtering chambers 13 and 14, thereby causing the sputtering chambers 13 and 14 to flow. It can be used for the film-forming process. Therefore, it is not necessary to evacuate the isolation vacuum chamber 102 (see FIG. 3) as in the prior art, and the manufacturing cost can be reduced.

  As described above, the configuration can be simplified and the manufacturing cost can be reduced as compared with the conventional configuration in which the three-chamber isolation vacuum chamber 102 is provided between the sputtering chambers 13 and 14. Since it is not necessary to stop the conveyance of the production, the production efficiency can be improved. In addition, it is possible to prevent the reaction gas from flowing from one sputtering chamber 13 to the other sputtering chamber 14 and to reliably separate the atmosphere between the sputtering chambers 13 and 14.

  As described above, the preferred embodiments according to the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the examples. The constituent members and combinations shown in the above-described examples are merely examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.

For example, an atmosphere separation unit may be provided between reactive sputtering chambers with different reactive gases.
For example, in the present embodiment, a configuration in which two sputtering chambers are connected via an atmosphere separation unit has been described. However, a configuration in which a plurality of sputtering chambers are connected around the atmosphere separation unit with one atmosphere separation unit as a center. It may be.
Further, three or more gas discharge units may be provided, or the inert gas discharge amount discharged from each gas discharge unit may be different. Further, in the present embodiment, the case where the gas discharge unit is provided at the center of the substrate separation direction in the atmosphere separation unit has been described. However, the gas separation unit may be provided on the first sputtering chamber side or the second sputtering chamber side. Good.

It is a schematic block diagram (side view) of the sputtering device in embodiment of this invention. It is a perspective view of the atmosphere separation part in embodiment of this invention. It is a schematic block diagram which shows the conventional sputtering device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Sputtering device 13 ... 1st sputter | spatter chamber (sputter | spatter chamber) 14 ... 2nd sputter | spatter chamber (sputter | spatter chamber) 17 ... Vacuum evacuation means 18 ... Vacuum evacuation means 22 ... Target 27 ... 1st gas supply means 28 ... 2nd gas supply Means 40 ... Atmosphere separation part 42 ... Gas discharge part W ... Substrate

Claims (4)

A plurality of sputtering chambers each including a target including a film forming material and a transport unit configured to transport the substrate while the surface of the target and the surface of the substrate are arranged substantially in parallel are formed,
In the sputtering apparatus that continuously performs the sputtering process on the substrate while transporting the substrate sequentially to the plurality of the sputtering chambers,
An atmosphere separation part is formed between the adjacent sputtering chambers,
A cross section perpendicular to the transport direction of the substrate in the atmosphere separation unit is formed smaller than a cross section perpendicular to the transport direction of the substrate in the adjacent sputtering chamber;
The atmosphere separation unit is provided with a plurality of gas discharge units for discharging a sputtering gas used in the adjacent sputtering chamber,
A sputtering apparatus, characterized in that an evacuation means for evacuating the adjacent sputtering chamber is provided on the opposite side of the atmosphere separation unit across the adjacent sputtering chamber.   The sputtering apparatus according to claim 1, wherein reactive sputtering is performed by introducing a reactive gas in at least one of the sputtering chambers.   The sputtering apparatus according to claim 1, wherein the plurality of gas discharge units are arranged on the front and back surfaces of the substrate in the atmosphere separation unit. A plurality of sputtering chambers each including a target including a film forming material and a transport unit configured to transport the substrate while the surface of the target and the surface of the substrate are arranged substantially in parallel are formed,
A film forming method for continuously performing a sputtering process on the substrate while sequentially transporting the substrate to a plurality of the sputtering chambers,
An atmosphere separation part is formed between the adjacent sputtering chambers,
A cross section perpendicular to the transport direction of the substrate in the atmosphere separation unit is formed smaller than a cross section perpendicular to the transport direction of the substrate in the adjacent sputtering chamber;
In the atmosphere separation unit, a sputtering gas used in the adjacent sputtering chamber is discharged,
A film forming method, wherein the adjacent sputtering chamber is evacuated from the opposite side of the atmosphere separation portion across the adjacent sputtering chamber.

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