JP2009178672A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

An object of the present invention is to perform processing more uniformly in a substrate surface and improve throughput.
A substrate processing apparatus (1) removes a liquid layer (16) formed on a substrate (2) and a liquid nozzle (16) for forming a developer liquid layer (X) on the upper surface of the substrate (2) while horizontally transporting the substrate (2). Removal means. The removing means is provided so as to cross the substrate 2 and discharges air toward the upper surface of the substrate 2, and a position adjacent to the rear end side of the substrate 2 with respect to the air discharge position by the air knife 18. And a wave eliminating member 20 that suppresses the undulation of the liquid layer X that occurs when the air is discharged.
[Selection] Figure 1

Description

  The present invention supplies various processing liquids to a substrate such as a glass substrate for FPD (flat panel display) such as an LCD (liquid crystal display device) or PDP (plasma display), a glass substrate for photomask, a semiconductor substrate, etc. The present invention relates to a substrate processing apparatus and the like.

  2. Description of the Related Art Conventionally, for example, an apparatus disclosed in Patent Document 1 has been proposed as a substrate processing apparatus that supplies a processing liquid to an upper surface (main surface) of a rectangular substrate such as an LCD and performs predetermined processing.

The apparatus disclosed in this document 1 is a so-called paddle development in which a developer is supplied to the surface of a substrate while the substrate is conveyed in a horizontal posture, a liquid layer is formed with the surface tension, and development processing is performed for a predetermined time in that state. Process. Then, the substrate is tilted in the width direction (inclined in a direction orthogonal to the transport direction), and the developer is allowed to flow along the substrate, and then the cleaning liquid is supplied to the substrate surface while transporting the substrate in an inclined posture. The cleaning process is performed. The device disclosed in Patent Document 1 that performs paddle development processing can perform development processing on the entire substrate with a small amount of developer compared to a device that supplies the developer in a shower-like manner, and therefore reduces running costs. The development process is economical.
JP-A-11-87210

  However, the conventional apparatus has the following problems. That is, when the liquid layer is formed, the developer is supplied to the substrate in order from the front end side in the transport direction. However, after the development process, the substrate is inclined in the width direction so that the developer flows down. There is a natural difference in processing time. Specifically, the processing time tends to be shorter toward the rear end side of the substrate in the transport direction and at a higher position in the inclined posture. When the size of the substrate is small, the time difference in the processing time within the substrate surface (the time difference in processing time between the part with the longest processing time and the part with the shortest processing time) is short, and there is almost no influence on the quality and can be ignored. . However, in recent years, as the size of the substrate increases, the required processing accuracy tends to increase, and the time difference between the processing times within the substrate surface cannot be ignored for ensuring quality. Further, in recent years, improvement of throughput has been regarded as more important, and it is difficult for a conventional apparatus that needs to stop the substrate conveyance and perform posture change after development processing to meet such a demand.

  The present invention has been made in view of the above circumstances, and in a substrate processing apparatus that performs predetermined processing on a substrate by so-called paddle processing, the substrate surface is processed more uniformly and throughput is improved. It aims to plan.

  In view of the fact that the above-mentioned problem is caused by changing the posture of the substrate, the applicant carries out a series of processes from formation of the liquid layer to removal while maintaining the horizontal posture while horizontally transporting the substrate. A study was made to supply (spray) fluid to the substrate sequentially from the tip side, thereby removing the liquid layer. However, when a fluid is sprayed on the substrate, the problem is that the stability of the paddle processing is impaired, such as the liquid layer being disturbed by the influence and the processing liquid flowing down from the substrate. Therefore, the applicant further studied and invented the following substrate processing apparatus.

  That is, the substrate processing apparatus according to the present invention is provided so as to be relatively movable with respect to a horizontally supported substrate, and the liquid layer of the processing liquid formed on the upper surface of the substrate is transferred to the substrate along with the movement. Removing means for removing the liquid layer from one end side to the other end side of the substrate, and the removing means removes the liquid removal fluid whose flow rate has been adjusted to remove the liquid layer in a direction intersecting the relative movement direction. The fluid supply unit that discharges to the upper surface of the substrate over the entire width is spaced from the upper surface side of the substrate by a distance corresponding to the liquid layer at a position adjacent to the other end side of the supply position of the delamination fluid on the substrate. And a wave extinguishing part that suppresses the undulation of the liquid layer that is generated when the fluid for delaminating is discharged.

  In this apparatus, the removal means moves relative to the substrate that is horizontally supported and on which the liquid layer is formed, and during this movement, the delamination fluid is discharged from the fluid supply unit onto the substrate. The liquid layer is sequentially removed from one end side of the substrate toward the other end side. At that time, the wave of the liquid layer generated when the delamination fluid is discharged is suppressed by the wave eliminating portion at a position adjacent to the other end side from the discharge position of the delamination fluid. Thus, the stability of the liquid layer remaining in the substrate is kept good. Therefore, it is possible to remove the liquid layer on the substrate satisfactorily while maintaining the horizontal posture without impairing the stability of the paddle processing.

  The substrate processing method according to the present invention is a substrate processing method using this substrate processing apparatus, and supplies the processing liquid from one end side to the other end side with respect to the upper surface of the horizontally supported substrate. A liquid layer forming step of forming a liquid layer of the processing liquid on the upper surface of the substrate, and using the substrate processing apparatus, while moving the removing means relative to the substrate on which the liquid layer is formed. And a liquid layer removing step of removing the liquid layer from the one end side to the other end side of the substrate by discharging the delaminating fluid onto the upper surface of the substrate.

  According to this method, both the formation of the liquid layer and the removal of the liquid layer are performed in a state where the substrate is horizontally supported, and all the treatments are sequentially performed from the same side (the one end side) of the substrate. Therefore, it is possible to equalize the processing time with the processing liquid in the substrate surface while performing the paddle processing, and it is possible to improve the throughput because the posture change of the substrate is unnecessary.

  As a specific configuration of the substrate processing apparatus, the wave canceling portion has a facing surface facing the top surface of the substrate, and a meniscus of the processing liquid is interposed between the facing surface and the substrate top surface. It is configured to form.

  According to this configuration, the up-and-down movement of the liquid layer is restricted by the opposing surface of the wave eliminating portion and the upper surface of the substrate, so that the liquid layer can be effectively prevented from wavy.

  In addition, if the treatment liquid adheres to the wave-dissipating part, it is considered that the dried product may be mixed into the liquid layer of the next substrate. Therefore, in the above apparatus, the cleaning liquid is sprayed on the wave-dissipating part. Accordingly, a cleaning means for cleaning the wave eliminating portion is provided.

  According to this configuration, it is possible to remove the treatment liquid adhering to the wave eliminating portion or prevent the treatment liquid from being dried, so that the above inconvenience can be solved.

  In the above apparatus, the liquid layer is formed by being relatively movable with respect to the horizontally supported substrate, and supplying the processing liquid from the one end side to the upper surface of the substrate along with the movement. You may provide a 1st process liquid supply means.

  According to this configuration, it is possible to perform the steps from the formation of the liquid layer to the removal of the liquid layer with a common apparatus while keeping the substrate in a horizontal posture.

  Further, the apparatus moves relative to the substrate integrally with the removing means, and is separated from the liquid layer with respect to a region of the substrate to which the delaminating fluid is supplied. There may be provided a second processing liquid supply means for supplying the processing liquid.

  According to this configuration, in accordance with the relative movement of the removing unit with respect to the substrate, another processing liquid is immediately supplied to the region of the substrate to which the layering fluid has been supplied (the region from which the liquid layer has been removed). Is possible. Therefore, for example, if the processing liquid of the next process is supplied by the second processing liquid supply means, it is possible to quickly move to the processing of the next process while preventing drying of the substrate in the region where the liquid layer has been removed. It becomes possible.

  In the above apparatus, it is preferable that the removing means includes a cover member that covers the fluid supply section and a discharge position of the delamination fluid on the substrate.

  According to this configuration, it is possible to effectively prevent mist (mist-like processing liquid) from being scattered due to the supply of the delaminating fluid. In this case, in the case having the second processing liquid supply means, the cover member covers the processing liquid supply position by the second processing liquid supply means of the second processing liquid supply means and the substrate. It may be provided. According to this configuration, it is possible to effectively prevent mist from being scattered due to the supply of the processing liquid by the second processing liquid supply means.

  In addition, when it has the said cover member, it is suitable to have further the exhaust means which exhausts the internal atmosphere of this cover member.

  According to this configuration, the cover member can be prevented from being filled with mist. Therefore, it is possible to avoid the inconvenience that mist adheres to the inner surface of the cover member and dries and adheres to the substrate.

  If the present invention is applied, both the formation of the liquid layer and the removal of the liquid layer can be performed while the substrate is supported horizontally. Therefore, while performing so-called paddle processing, the processing time in the substrate surface can be made uniform as compared with the conventional case, and the throughput can be improved.

  A preferred embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 schematically shows a substrate processing apparatus according to the present invention in a sectional view. The substrate processing apparatus 1 is an apparatus for performing a predetermined process process on the substrate 2 while transporting the substrate 2 in the horizontal direction in the direction of the arrow in the drawing, and includes a development processing chamber 10A and a cleaning processing chamber 10B. It is out.

  In each of the processing chambers 10 </ b> A and 10 </ b> B, a plurality of transport rollers 14 are arranged in parallel at a predetermined interval, and the substrate 2 is transported in a horizontal posture along a transport path constituted by these transport rollers 14. In the figure, reference numeral 12 denotes openings formed in the partition wall 11A between the development processing chamber 10A and the upstream processing chamber and the partition wall 11B between the development processing chamber 10A and the cleaning processing chamber 10B. Since the substrate 2 passes through these openings 12, the substrate can be transferred to the adjacent processing chamber.

  Inside the development processing chamber 10A, a liquid nozzle 16 (first liquid nozzle 16) for supplying a developing solution (processing solution) to the substrate 2 at an upstream end (upstream side in the substrate transport direction) thereof. Which corresponds to the first processing liquid supply means according to the present invention). The first liquid nozzle 16 has an elongated discharge port that is elongated in the width direction of the conveyance path (a direction orthogonal to the substrate conveyance direction; a direction orthogonal to the paper surface in the figure) and continuously extends in the longitudinal direction. It has a so-called slit nozzle, and is disposed above the opening 12 in a state where the discharge port is inclined downward toward the downstream side (downstream side in the substrate transport direction). The first liquid nozzle 16 is connected to a developer storage tank 30 via a first liquid supply pipe 32, and drives a pump 34 provided in the first liquid supply pipe 32 and an opening / closing valve (not shown). By the control, the developer can be supplied onto the substrate 2 by receiving the developer from the storage tank 30.

  On the other hand, at the partition wall 11B between the development processing chamber 10A and the cleaning processing chamber 10B, there is a removing means for removing the developing solution (described later liquid layer X) supplied onto the substrate 2 by the first liquid nozzle 16. Is provided. This removing means includes an air knife 18, a wave eliminating member 20, a wave eliminating cleaning nozzle 22, a substrate cleaning nozzle 24, a cover member 26, and the like.

  The air knife 18 (corresponding to a fluid supply unit according to the present invention) is disposed at a position just above the opening 12 of the partition wall 11B and above the conveyance path. The air knife 18 is a slit nozzle having an elongated discharge port that is elongated in the width direction of the conveyance path and continuously extends in the longitudinal direction, and is disposed with the discharge port directed directly below or slightly upstream. Yes. The air knife 18 is connected to an air supply source 29 via an air supply pipe 28. By operating an open / close valve or the like (not shown), a predetermined flow rate of air from the air supply source 29, specifically cleanliness and The air can be discharged onto the substrate 2 upon receiving a so-called CDA (Clean Dry Air; corresponding to the slow layer fluid according to the present invention) whose temperature and humidity are adjusted to a predetermined level. That is, by discharging air from the air knife 18 onto the substrate 2, the developing solution (described later liquid layer X) on the substrate 2 is removed by the air pressure. In the transport path, a transport roller 14 capable of supporting the substrate 2 over the entire width of the substrate 2 is disposed as a transport roller 14 at an air discharge position by the air knife 18. This prevents the substrate 2 from being bent and deformed.

  The wave eliminating member 20 (corresponding to the wave eliminating portion of the present invention) is a member for preventing the developer (liquid layer X) from wavy due to the air discharge. The wave eliminating member 20 is provided over the width direction of the transport path at a position above the transport path and adjacent to the upstream side of the air knife 18.

  As shown in FIG. 2, the wave eliminating member 20 has an L-shaped cross section having a facing surface 21 that faces the transport substrate 2 and is substantially parallel to the upper surface of the substrate 2. In the wave eliminating member 20, the gap S between the facing surface 21 and the transport substrate 2 is equal to the thickness t of the developer layer (liquid reservoir) X formed on the upper surface of the substrate 2, preferably the thickness t It is provided so as to be slightly wider. As a result, a meniscus (that is, liquid cross-linking of the developer) can be formed between the substrate 2 and the facing surface 21. In this embodiment, the thickness t of the liquid layer X formed on the substrate 2 is about 3 to 4 mm, and the wave eliminating member 20 is provided so that the gap S is about the thickness t + 1 mm. In addition, the length dimension W of the facing surface 21 in the substrate transport direction is shorter than the total length of the substrate 2 in the same direction. In the embodiment, the length dimension W of the facing surface 21 is about 1600 mm. Is set to about 10 mm.

  The wave elimination cleaning nozzle 22 (corresponding to the cleaning means according to the present invention) sprays the developer as a cleaning liquid mainly on the opposing surface 21 of the wave elimination member 20. The wave-eliminating cleaning nozzle 22 is a so-called shower nozzle that is elongated in the width direction of the transport path and has discharge ports arranged at predetermined intervals in the longitudinal direction, and is located below the transport path and in the vicinity of the partition wall 11B. In addition, the discharge port is arranged in a state directed to the wave eliminating member 20 (opposing surface 21). The wave eliminating nozzle 22 is connected to the storage tank 30 through a second liquid supply pipe 36, and drives a pump 38 provided in the second liquid supply pipe 36 and controls an open / close valve (not shown). Accordingly, the developer can be supplied to the wave eliminating member 20 by receiving the developer supplied from the storage tank 30.

  The substrate cleaning nozzle 24 supplies a rinsing liquid (pure water in this embodiment) onto the substrate from which the liquid layer X has been removed prior to the processing in the development processing chamber 10A. The substrate cleaning nozzle 24 (referred to as the second liquid nozzle 24; corresponding to the second processing liquid supply means according to the present invention) is disposed at a position above the conveyance path and adjacent to the downstream side of the air knife 18. In practice, it is disposed closer to the cleaning processing chamber 10B than the partition wall 11B. Similarly to the first liquid nozzle 16, the second liquid nozzle 24 is formed of a slit nozzle that is elongated in the width direction of the transport path, and is disposed with the discharge port facing slightly downstream. The second liquid nozzle 24 is connected to a pure water supply source (not shown) via a pure water supply pipe 25 and can receive pure water from the supply source to supply pure water onto the substrate 2. It has become. That is, the substrate 2 processed in the development processing chamber 10A is washed with water by discharging pure water onto the substrate 2.

  The cover member 26 covers the discharge positions of the air knife 18, the wave eliminating member 20, the second liquid nozzle 24, air, and the like integrally from above over the entire width direction of the transport path. The cover member 26 is formed in a dome-shaped cross section so as to form a predetermined space continuously with the partition wall 11B and between the cover 2 and the substrate 2. Although not shown, a suction port communicating with a suction pump or the like is formed on the inner surface of the cover member 26 or the processing chambers 10A and 10B, and the internal atmosphere of the cover member 26 is sucked through the suction port. The exhaust is possible. In this embodiment, the suction pump or the like and the suction port correspond to the exhaust means according to the present invention.

  The development processing chamber 10A is provided with a funnel-shaped collection pan at the inner bottom thereof so that the used developer is returned to the storage tank 30 through the collection pipe 31 while being collected by the collection pan. It has become. That is, in the development processing chamber 10A, the developer supply / discharge system is used for processing the substrate 2 while circulating the developer between the storage tank 30 and the first liquid nozzle 16 and the wave eliminating nozzle 22. Is configured.

  Although the cleaning processing chamber 10B is not shown in detail, a substrate cleaning nozzle including a shower nozzle is provided in the processing chamber, for example, at a position above the transport path of the substrate 2 along the transport path. Has been. As a result, the cleaning liquid (pure water in this embodiment) can be supplied to the upper surface of the substrate 2 that is transported in the horizontal posture by the transport roller 14.

  The substrate processing apparatus 1 is provided with an unillustrated controller having a computer as a component, and the controller 40 is responsible for driving the transport roller 14 and the pumps 34 and 38 and opening and closing various valves. To be controlled. For example, the apparatus 1 includes detection sensors 40a and 40b for the substrate 2 at a position slightly upstream of the opening 12 of the upstream partition wall 11A in the development processing chamber 10A and in the vicinity of the cover member 26. Based on the detection of the substrate 2 by the sensors 40a and 40b, the controller is configured to control the open / close valve and the like.

  Next, the processing of the substrate 2 by the substrate processing apparatus 1 will be described together with its effects.

  In this substrate processing apparatus 1, each valve is closed until the substrate 2 is detected by the detection sensors 40a and 40b. Therefore, the supply of the developer and cleaning liquid to each nozzle is stopped.

  When the substrate 2 is transported by the driving of the transport roller 14 and the leading edge of the substrate 2 is detected by the detection sensor 40a, supply of the developer from the storage tank 30 to the first liquid nozzle 16 is started. When the substrate 2 is carried into the development processing chamber 10 </ b> A through the opening 12, the developer is sequentially supplied to the upper surface of the substrate 2 from the front end (the front end in the traveling direction of the substrate 2). . As a result, a developer liquid layer X having a predetermined thickness t is formed on the upper surface of the substrate 2, and the substrate 2 is transported at a low speed in a state in which the liquid layer X is formed. Applied. That is, so-called paddle development processing is performed.

  When the substrate 2 is further transported and the front end thereof is detected by the detection sensor 40b, the supply of air to the air knife 18 and the supply of pure water to the second liquid nozzle 24 are started, and the exhaust in the cover member 26 is further started. Is started. And when the front-end | tip of the board | substrate 2 passes the downward position of the wave eliminating member 20, while air is discharged to the board | substrate 2 from this air knife 18, while the liquid layer X on a board | substrate is removed from the front end side by this air pressure, Pure water is discharged from the second liquid nozzle 24 to the removed portion. As a result, the development processing is finished in order from the front end side of the substrate 2 and the cleaning (replacement water washing) processing of the substrate 2 is started.

  When air is discharged to the substrate 2, the liquid layer X undulates on the tip side of the wave eliminating member 20, whereby the liquid layer X comes into contact with the opposed surface 21 of the wave eliminating member 20 and the opposed surface. A meniscus is formed between 21 and the substrate 2. As a result of the meniscus being formed in this manner, the vertical movement of the liquid layer X is restricted by the facing surface 21 and the substrate 2, and the transmission of the wave (ripple of the liquid layer X) to the proximal end rear end side is suppressed. It will be. Therefore, a situation in which the wave is transmitted to the entire liquid layer and the entire liquid layer X undulates is prevented, and the stability of the remaining liquid layer X is maintained.

  Further, when air or pure water is sprayed onto the substrate 2, a mist of developer or pure water is generated. As described above, the spray position of the air or pure water is covered by the cover member 26, and this cover is further covered. As a result of the atmosphere in the member 26 being sucked and exhausted, the mist is prevented from being widely scattered on the substrate 2.

  When the substrate 2 is thus transported and the rear ends of the substrate 2 are sequentially detected by the detection sensors 40a and 40b, the substrate 2 is discharged by the first liquid nozzle 16 according to the timer count based on the detection, the air knife. It is detected that the air has passed through the air discharge position 18 and the pure water discharge position by the second liquid nozzle 24, and accordingly, the developer is supplied to the first liquid nozzle 16 and the air knife 18 is sequentially supplied. The supply of air and the supply of pure water to the second liquid nozzle 24 are stopped. As a result, a series of development processing for the substrate 2 in the development processing chamber 10A is completed.

  After the treatment, the developer is periodically sprayed from the wave-washing nozzle 22 to the wave-breaking member 20, thereby cleaning the wave-breaking member 20 and adhering to the wave-breaking member 20. Drying of the developer is suppressed.

  As described above, in this substrate processing apparatus 1, the substrate 2 is subjected to the paddle development process while horizontally transporting the substrate 2, but not only the formation (processing) of the liquid layer X but also the removal of the liquid layer X is performed. (Processing) is also performed while the substrate 2 is being transported horizontally, and any processing is performed in order from the front end side while transporting the substrate 2 in the same direction. For this reason, this type of conventional apparatus that performs paddle development processing, that is, a liquid layer is formed in a horizontal posture, and then processed in the substrate surface like a device that converts the substrate posture into an inclined posture and removes the liquid layer. There is no difference in time, and the total processing time can be shortened as much as the posture change of the substrate is unnecessary. Therefore, according to this substrate processing apparatus 1, while enjoying the benefit of the paddle development processing that allows the development processing to be performed economically while reducing the amount of developer used, the development processing on the substrate surface is uniform. As a result, the throughput can be improved.

  In particular, in this substrate processing apparatus 1, the liquid layer X on the substrate is removed by air pressure, but as described above, the wave eliminating member 20 is provided above the transport path of the substrate 2, so that the wave generated in the liquid layer X is eliminated. Since the transmission is suppressed and the entire liquid layer is prevented from undulating, the stability of the liquid layer X can be kept good. Accordingly, it is possible to prevent the occurrence of a situation in which the stability of the liquid layer X is impaired and the developer flows down from the substrate and as a result affects the quality of the development process. There is an advantage that the uniformity of the developing process can be improved.

  In addition, in the substrate processing apparatus 1, during the non-processing of the substrate 2, the developer is periodically sprayed from the wave cleaning nozzle 22 to the wave eliminating member 20, and the dried developer (foreign matter) adhering to the facing surface 21 is removed. Since it is configured so as to remove or prevent the developer from drying, it is possible to prevent inconveniences such as foreign matters entering the liquid layer X. That is, when the developing solution adhering to the wave eliminating member 20 is dried along with the formation of the meniscus, it is considered that this dry matter (foreign matter) is mixed into the liquid layer X of the next substrate 2 and adheres to the substrate 2. In this apparatus 1, since the developer is periodically sprayed on the wave-dissipating member 20 as described above, the dry matter can be removed and the developer adhering to the wave-dissipating member 20 can be prevented from drying. Therefore, while providing the wave eliminating member 20 to ensure the stability of the liquid layer X, it is possible to prevent the above-described adverse effect, that is, the situation where the dried material is mixed into the liquid layer X.

  Further, the substrate processing apparatus 1 is provided with a second liquid nozzle 24 at a position adjacent to the downstream side of the air knife 18 so that pure water is supplied onto the substrate 2 immediately after the liquid layer X is removed. Therefore, immediately after the removal of the liquid layer X, a pure water liquid film can be immediately formed on the substrate to prevent drying, and the substrate 2 can be immediately subjected to a washing treatment (replacement water washing). In particular, since a pure water is supplied over the entire width of the substrate 2 by applying a slit nozzle as the second liquid nozzle 24, the processing of the substrate 2 can be switched from the development processing to the cleaning processing simultaneously over the entire width. This improves the uniformity of processing within the substrate surface.

  In addition, in the substrate processing apparatus 1, the air knife 18 and the second liquid nozzle 24 are covered with the cover member 26 as described above, and the atmosphere in the cover member 26 is sucked and exhausted, so that mist (developer solution and (Pure water) is prevented from scattering on the substrate. Therefore, it is possible to prevent the occurrence of a situation in which the mist of the developer reattaches to the portion from which the liquid layer X is removed or the mist of pure water adheres to the liquid layer X to dilute the developer. There is also an advantage.

  By the way, the substrate processing apparatus 1 described above is an example of a preferred embodiment of the substrate processing apparatus according to the present invention, and its specific configuration can be appropriately changed without departing from the gist of the present invention. .

  For example, as the wave eliminating member 20, as shown in FIG. 3, the corner (particularly upstream) is rounded or the corner is chamfered so that the liquid layer X is kept stable. However, the substrate 2 may be smoothly transported to a position below the wave eliminating member 20 (opposing surface 21). In addition, as shown in FIG. 4, the wave eliminating member 20 may be formed in an inverted T-shaped cross section to increase the rigidity of the wave eliminating member 20. This wave eliminating member 20 is effective in preventing deformation of the facing surface 21 due to bending. Further, as shown in FIG. 5, a wave in which the facing surface 21 becomes discontinuous by arranging unit members 20 a to 20 c each having facing surfaces 21 a to 21 c facing the substrate 2 in parallel with a predetermined interval in the substrate transport direction. The eraser member 20 may be applied. In short, as long as the wave eliminating member 20 can prevent the entire liquid layer from undulating by suppressing the transmission of the wave generated in the liquid layer X when air is discharged, the specific shape thereof is the shape of the above-described embodiment or the like. It is not limited.

  Moreover, in the said embodiment, the removal means (the air knife 18, the wave eliminating member 20, etc.) of the liquid layer X is arrange | positioned fixedly, and the board | substrate 2 is made relatively with respect to the said removal means by moving a board | substrate side. The liquid layer X is removed while being moved, but of course, the reverse structure may be used. That is, as shown in FIG. 6, the substrate 2 may be stopped and the removal of the liquid layer X may be performed while moving the removing means. In this case, the liquid layer X is formed while transporting the substrate 2, and then the liquid layer X is formed while moving the removing means upstream from the home position in the vicinity of the partition wall 11B in a state where the substrate 2 is stopped. What is necessary is just to make it remove. In that case, the wave eliminating cleaning nozzle 22 may be arranged at the home position, and the developer may be sprayed onto the wave eliminating member 20 when reset to the position. In addition to moving only one of the substrate 2 and the removing unit as described above, the liquid layer X may be removed while moving both the substrate 2 and the removing unit.

  In the above embodiment, the air knife 18 is provided such that its discharge port extends in the width direction of the transport path. However, if the developer can be discharged over the entire width of the substrate 2, the air knife 18 has its discharge port. May extend in a direction intersecting the width direction.

  In the above embodiment, since the developer is circulated, the developer is used as the cleaning liquid for the wave stopper member 20. However, when the developer is not circulated, the developer is used as the cleaning liquid for the wave stopper member 20. Other than that may be applied.

Moreover, in the said embodiment, although the liquid layer X is removed from the board | substrate 2 by spraying air (CDA) to the liquid layer X, of course, it is also possible to apply fluids other than this. For example, an inert gas such as N ₂ (nitrogen) is also applicable. It is also possible to apply a developer or a mixed fluid of developer and air (CDA).

  In the above embodiment, the example in which the present invention is applied to the substrate processing apparatus 1 that performs the development processing on the substrate 2 has been described. However, the present invention is not limited to the development processing as long as the paddle processing is performed. The present invention can also be applied to a substrate processing apparatus that performs processing such as etching processing on a substrate.

It is sectional drawing which shows schematic structure of the substrate processing apparatus which concerns on this invention. It is an enlarged view of FIG. 1 which shows the principal part of a substrate processing apparatus. It is a section schematic diagram showing other examples of a wave elimination member. It is a section schematic diagram showing other examples of a wave elimination member. It is a section schematic diagram showing other examples of a wave elimination member. It is sectional drawing which shows the other example of the substrate processing apparatus which concerns on this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Substrate 10A Development processing chamber 10B Cleaning processing chamber 14 Conveyance roller 16 Liquid nozzle (1st liquid nozzle)
18 Air knife 20 Wave eliminating member 21 Opposing surface 22 Wave eliminating cleaning nozzle 24 Liquid nozzle (second liquid nozzle)
26 Cover member X Liquid layer

Claims (9)

Provided to be relatively movable with respect to the horizontally supported substrate, and with the movement, the liquid layer of the processing liquid formed on the upper surface of the substrate is removed from one end side to the other end side of the substrate. Removing means for
The removing means includes a fluid supply unit that discharges the delamination fluid whose flow rate has been adjusted to remove the liquid layer to the upper surface of the substrate across the entire width of the substrate in a direction intersecting the relative movement direction; The liquid layer generated at the time of discharge of the delamination fluid, disposed opposite to the other end side from the supply position of the delamination fluid and spaced from the upper surface of the substrate by a distance corresponding to the liquid layer. A substrate processing apparatus comprising: a wave extinguishing unit that suppresses the undulation of the substrate. The substrate processing apparatus according to claim 1,
The wave eliminating portion has a facing surface facing the top surface of the substrate, and is configured to form a meniscus of the processing liquid between the facing surface and the top surface of the substrate. Processing equipment. In the substrate processing apparatus according to claim 1 or 2,
A substrate processing apparatus, comprising: cleaning means for cleaning the wave eliminating part by spraying a cleaning liquid onto the wave eliminating part. In the substrate processing apparatus as described in any one of Claims 1 thru | or 3,
A first processing liquid supply means which is provided so as to be relatively movable with respect to a horizontally supported substrate and forms the liquid layer by supplying the processing liquid from the one end side to the upper surface of the substrate along with the movement. A substrate processing apparatus comprising: The substrate processing apparatus according to any one of claims 1 to 4,
The substrate moves relative to the substrate integrally with the removing means, and with the movement, a processing liquid different from the liquid layer is supplied to a region of the substrate to which the layer removal fluid is supplied. A substrate processing apparatus comprising second processing liquid supply means. The substrate processing apparatus according to any one of claims 1 to 5,
The substrate processing apparatus, wherein the removing unit includes a cover member that covers the fluid supply unit and a discharge position of the delamination fluid on the substrate. The substrate processing apparatus according to claim 6,
The second treatment liquid supply means is provided, and the cover member is provided so as to cover a supply position of the treatment liquid supplied by the second treatment liquid supply means among the second treatment liquid supply means and the substrate. A substrate processing apparatus. In the substrate processing apparatus of Claim 6 or 7,
A substrate processing apparatus comprising exhaust means for exhausting the internal atmosphere of the cover member. A substrate processing method using the substrate processing apparatus according to claim 1,
A liquid layer forming step of forming a liquid layer of the processing liquid on the upper surface of the substrate by supplying a processing liquid from one end side to the other end side of the horizontally supported upper surface of the substrate;
The substrate processing apparatus is used to discharge the delamination fluid to the upper surface of the substrate while moving the removing means relative to the substrate on which the liquid layer is formed. A liquid layer removing step of removing the liquid layer from one end side toward the other end side.

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