[go: up one dir, main page]

JP2009164385A - Back-illuminated image sensor - Google Patents

Back-illuminated image sensor Download PDF

Info

Publication number
JP2009164385A
JP2009164385A JP2008001250A JP2008001250A JP2009164385A JP 2009164385 A JP2009164385 A JP 2009164385A JP 2008001250 A JP2008001250 A JP 2008001250A JP 2008001250 A JP2008001250 A JP 2008001250A JP 2009164385 A JP2009164385 A JP 2009164385A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
center
light
conversion element
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008001250A
Other languages
Japanese (ja)
Other versions
JP2009164385A5 (en
Inventor
Masamitsu Hashimoto
正光 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2008001250A priority Critical patent/JP2009164385A/en
Publication of JP2009164385A publication Critical patent/JP2009164385A/en
Publication of JP2009164385A5 publication Critical patent/JP2009164385A5/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

【課題】入射光の波長に依存した光学的な混色を防止することが可能な裏面照射型撮像素子を提供する。
【解決手段】シリコン層１の裏面側から光を照射し、シリコン層１内に形成された光電変換素子４でこの光に応じて発生した電荷に応じた信号をシリコン層１の表面側に形成した読み出し回路５から読み出して撮像を行う裏面照射型撮像素子３０であって、各光電変換素子４に対応させてシリコン層１の裏面上方に形成されたカラーフィルタ９と、シリコン層１の裏面上方に形成され各光電変換素子４に対応して開口が形成された遮光膜１７とを備え、カラーフィルタ９としてそれぞれ異なる色の光を透過する３種類のカラーフィルタを含み、周辺部にある光電変換素子４に対応する遮光膜１７の開口は、該光電変換素子４に対応するカラーフィルタ９の種類に応じて大きさが異なっており且つその中心が該光電変換素子４の中心よりも中心部側にずれている。
【選択図】図２A back-illuminated image sensor capable of preventing optical color mixing depending on the wavelength of incident light is provided.
Light is irradiated from the back side of a silicon layer, and a signal corresponding to the electric charge generated according to the light is formed on the surface side of the silicon layer by a photoelectric conversion element formed in the silicon layer. A back-illuminated image sensor 30 that reads out from the readout circuit 5 and performs imaging, and a color filter 9 formed above the back surface of the silicon layer 1 corresponding to each photoelectric conversion element 4, and above the back surface of the silicon layer 1. And a light-shielding film 17 formed with openings corresponding to the photoelectric conversion elements 4, including three types of color filters that transmit light of different colors as the color filters 9, and photoelectric conversion at the peripheral portion The opening of the light shielding film 17 corresponding to the element 4 has a different size depending on the type of the color filter 9 corresponding to the photoelectric conversion element 4, and the center thereof is more central than the center of the photoelectric conversion element 4. It is shifted to the side.
[Selection] Figure 2

Description

本発明は、半導体基板の裏面側から光を照射し、前記半導体基板内に形成された多数の光電変換素子の各々で前記光に応じて発生した電荷に応じた信号を、前記半導体基板の表面側に形成した読み出し回路から読み出して撮像を行う裏面照射型撮像素子に関する。   The present invention irradiates light from the back side of a semiconductor substrate, and outputs a signal corresponding to the electric charge generated according to the light in each of a number of photoelectric conversion elements formed in the semiconductor substrate. The present invention relates to a backside illuminating type imaging device that reads out from a readout circuit formed on the side and performs imaging.

特許文献１には、裏面照射型撮像素子において、シリコン基板内に光電変換素子同士を分離する素子分離領域を設けることで、各光電変換素子で発生した電荷が隣の光電変換素子で発生した電荷と混ざるのを防いで電気的な混色を防止し、光電変換素子上方に設けたマイクロレンズを撮像素子の周辺部において中心部側にずらすことで、各光電変換素子の中心に光を集光できるようにした構成が開示されている。   In Patent Document 1, in a back-illuminated image pickup device, by providing an element isolation region that separates photoelectric conversion elements from each other in a silicon substrate, a charge generated in each photoelectric conversion element is a charge generated in an adjacent photoelectric conversion element. Can be mixed to prevent electrical color mixing, and by shifting the microlens provided above the photoelectric conversion element toward the center in the periphery of the image sensor, light can be collected at the center of each photoelectric conversion element Such a configuration is disclosed.

特開２００５−３４７７０９号公報JP 2005-347709 A

裏面照射型撮像素子は、半導体基板全体が光電変換領域となる。半導体基板としてシリコンを用いた場合、シリコンの光吸収係数には波長依存性があり、赤色の波長域や近赤外域等の長波長の光はシリコン基板の深いところまで到達する。このため、特許文献１に開示された構成では、ある光電変換素子に斜めに入射してきた長波長の光が、その光電変換素子に隣接する素子分離領域を突き抜けて隣の光電変換素子まで到達してしまい、光学的な混色が発生する可能性がある。短波長の光については、シリコン基板の浅いところまでしか光が侵入しないため、斜めに光が入射したとしても、その光が素子分離領域まで到達してしまう可能性は極めて低い。   In the backside illumination type imaging device, the entire semiconductor substrate becomes a photoelectric conversion region. When silicon is used as the semiconductor substrate, the light absorption coefficient of silicon has a wavelength dependency, and light having a long wavelength such as a red wavelength region or a near infrared region reaches deep in the silicon substrate. For this reason, in the configuration disclosed in Patent Document 1, long-wavelength light that is incident obliquely on a certain photoelectric conversion element penetrates the element isolation region adjacent to the photoelectric conversion element and reaches the adjacent photoelectric conversion element. Therefore, optical color mixing may occur. For short-wavelength light, light penetrates only to a shallow portion of the silicon substrate, so even if light enters obliquely, the possibility that the light reaches the element isolation region is extremely low.

本発明は、上記事情に鑑みてなされたものであり、入射光の波長に依存した光学的な混色を防止することが可能な裏面照射型撮像素子を提供することを目的とする。   The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a back-illuminated image sensor that can prevent optical color mixing depending on the wavelength of incident light.

本発明の裏面照射型撮像素子は、半導体基板の裏面側から光を照射し、前記半導体基板内に形成された多数の光電変換素子の各々で前記光に応じて発生した電荷に応じた信号を、前記半導体基板の表面側に形成した読み出し回路から読み出して撮像を行う裏面照射型撮像素子であって、前記多数の光電変換素子の各々に対応させて前記半導体基板の裏面上方に形成されたカラーフィルタと、前記半導体基板の裏面上方に形成され、前記多数の光電変換素子の各々に対応して開口が形成された遮光膜とを備え、多数の前記カラーフィルタが、それぞれ異なる色の光を透過する少なくとも３種類のカラーフィルタを含み、前記裏面照射型撮像素子の周辺部にある前記光電変換素子に対応する前記遮光膜の開口は、該光電変換素子に対応するカラーフィルタの種類に応じて大きさが異なっており、且つ、その中心が該光電変換素子の中心よりも前記裏面照射型撮像素子の中心部側にずれている。   The backside illuminating type imaging device of the present invention irradiates light from the backside of the semiconductor substrate and outputs a signal corresponding to the electric charge generated according to the light in each of a number of photoelectric conversion elements formed in the semiconductor substrate. A back-illuminated imaging device that reads out and images from a readout circuit formed on the front surface side of the semiconductor substrate, and is formed above the back surface of the semiconductor substrate corresponding to each of the multiple photoelectric conversion elements A filter and a light-shielding film formed above the back surface of the semiconductor substrate and having an opening corresponding to each of the plurality of photoelectric conversion elements, and the plurality of color filters transmit light of different colors. The aperture of the light shielding film corresponding to the photoelectric conversion element in the peripheral portion of the backside illumination type imaging element includes a color corresponding to the photoelectric conversion element. It has different sizes depending on the type of filter, and are shifted to the center side of the back illuminated imaging device than the center the center of the photoelectric conversion element.

本発明の裏面照射型撮像素子は、前記周辺部にある前記光電変換素子に対応する前記遮光膜の開口が、該光電変換素子に対応するカラーフィルタを透過する光の波長が長波長に向かうほど小さくなっている。   In the backside illumination type imaging device of the present invention, the opening of the light shielding film corresponding to the photoelectric conversion element in the peripheral portion is such that the wavelength of light transmitted through the color filter corresponding to the photoelectric conversion element becomes longer. It is getting smaller.

本発明の裏面照射型撮像素子は、前記遮光膜が、前記半導体基板と前記カラーフィルタとの間に形成されている。   In the backside illumination type imaging device of the present invention, the light shielding film is formed between the semiconductor substrate and the color filter.

本発明の裏面照射型撮像素子は、前記周辺部にある前記光電変換素子に対応する前記カラーフィルタの中心が、該光電変換素子の中心よりも前記中心部側にずれている。   In the backside illuminating type imaging device of the present invention, the center of the color filter corresponding to the photoelectric conversion element in the peripheral portion is shifted to the central portion side from the center of the photoelectric conversion element.

本発明の裏面照射型撮像素子は、前記カラーフィルタの上に、各光電変換素子に対応させて形成されたマイクロレンズを備え、前記周辺部にある前記光電変換素子に対応する前記マイクロレンズの中心が、該光電変換素子の中心よりも前記中心部側にずれている。   The back-illuminated imaging device of the present invention includes a microlens formed on the color filter so as to correspond to each photoelectric conversion device, and the center of the microlens corresponding to the photoelectric conversion device in the peripheral portion. However, it is shifted to the center side from the center of the photoelectric conversion element.

本発明の裏面照射型撮像素子は、前記遮光膜が前記カラーフィルタの上に形成されており、前記遮光膜の開口内に形成されたマイクロレンズを備える。   The backside illuminating type imaging device of the present invention includes the micro-lens formed in the opening of the light shielding film, wherein the light shielding film is formed on the color filter.

本発明の裏面照射型撮像素子は、前記周辺部にある前記光電変換素子に対応する前記カラーフィルタの中心が、該光電変換素子の中心よりも前記中心部側にずれている。   In the backside illuminating type imaging device of the present invention, the center of the color filter corresponding to the photoelectric conversion element in the peripheral portion is shifted to the central portion side from the center of the photoelectric conversion element.

本発明の裏面照射型撮像素子は、前記周辺部にある前記光電変換素子に対応する前記マイクロレンズの中心が、該光電変換素子の中心よりも前記中心部側にずれている。   In the backside illuminating type imaging device of the present invention, the center of the microlens corresponding to the photoelectric conversion element in the peripheral part is shifted to the central part side from the center of the photoelectric conversion element.

本発明によれば、入射光の波長に依存した光学的な混色を防止することが可能な裏面照射型撮像素子を提供することができる。   According to the present invention, it is possible to provide a back-illuminated image sensor that can prevent optical color mixing depending on the wavelength of incident light.

以下、本発明の実施形態について図面を参照して説明する。   Embodiments of the present invention will be described below with reference to the drawings.

図１は、本発明の実施形態である裏面照射型撮像素子の中心部の断面模式図である。
図１に示すように、半導体基板（例えば単結晶シリコン層）１内に形成されたＰ型半導体からなる素子分離領域２により区切られた多数の単位画素領域３内に、高濃度のＮ型の半導体領域よりなる光電変換素子（フォトダイオード）４が形成されている。 FIG. 1 is a schematic cross-sectional view of a central portion of a backside illumination type image sensor that is an embodiment of the present invention.
As shown in FIG. 1, in a large number of unit pixel regions 3 separated by an element isolation region 2 made of a P-type semiconductor formed in a semiconductor substrate (for example, a single crystal silicon layer) 1, high-concentration N-type A photoelectric conversion element (photodiode) 4 made of a semiconductor region is formed.

単結晶シリコン層１の一方の主面、すなわち裏面（図中上側の面）上には反射防止膜８が形成されている。反射防止膜８上には遮光膜１７が形成されている。遮光膜１７には、各光電変換素子４に対応させて開口が形成されており、開口内には透明な絶縁膜が埋め込まれている。この遮光膜１７の開口により、この開口に対応する光電変換素子４の受光面積が決定されている。   An antireflection film 8 is formed on one main surface, that is, the back surface (upper surface in the drawing) of the single crystal silicon layer 1. A light shielding film 17 is formed on the antireflection film 8. An opening is formed in the light shielding film 17 corresponding to each photoelectric conversion element 4, and a transparent insulating film is embedded in the opening. The light receiving area of the photoelectric conversion element 4 corresponding to the opening is determined by the opening of the light shielding film 17.

遮光膜１７上には、各光電変換素子４に対応させてカラーフィルタ９が形成されている。カラーフィルタ９には、赤色の波長域の光を透過するＲカラーフィルタ（図中“Ｒ”を記載）と、緑色の波長域の光を透過するＧカラーフィルタ（図中“Ｇ”を記載）と、青色の波長域の光を透過するＢカラーフィルタ（図中“Ｂ”を記載）とが含まれており、これらが遮光膜１７上にモザイク状に配列されている。   Color filters 9 are formed on the light shielding film 17 so as to correspond to the photoelectric conversion elements 4. The color filter 9 includes an R color filter that transmits light in the red wavelength range (described as “R” in the drawing) and a G color filter that transmits light in the green wavelength range (described as “G” in the drawing). And a B color filter (indicated by “B” in the drawing) that transmits light in the blue wavelength range is arranged on the light shielding film 17 in a mosaic pattern.

カラーフィルタ９上には各光電変換素子４に対応させてマイクロレンズ１０が形成されている。裏面照射型撮像素子３０の中心部では、各光電変換素子４の中心と、その光電変換素子４に対応するカラーフィルタ９の中心と、その光電変換素子４に対応するマイクロレンズ１０の中心と、その光電変換素子４に対応する遮光膜１７の開口の中心とは全て一致している。   A microlens 10 is formed on the color filter 9 so as to correspond to each photoelectric conversion element 4. In the central part of the back-illuminated imaging element 30, the center of each photoelectric conversion element 4, the center of the color filter 9 corresponding to the photoelectric conversion element 4, the center of the microlens 10 corresponding to the photoelectric conversion element 4, All the centers of the openings of the light shielding film 17 corresponding to the photoelectric conversion element 4 coincide with each other.

単結晶シリコン層１の他方の主面側、すなわち表面側（図中下側の面）には、各光電変換素子４に蓄積された信号電荷に応じた信号を読み出す回路５が形成され、これら読み出し回路５上に、内部に配線層１８が形成された絶縁層７が形成されている。   On the other main surface side of the single crystal silicon layer 1, that is, on the surface side (lower surface in the figure), a circuit 5 for reading a signal corresponding to the signal charge accumulated in each photoelectric conversion element 4 is formed. On the readout circuit 5, an insulating layer 7 having a wiring layer 18 formed therein is formed.

読み出し回路５は、Ｐ型の半導体領域よりなる読み出しゲート部１１と、この読み出しゲート部１１に隣接して設けられ、光電変換素子４で蓄積された信号電荷が転送される高濃度のＮ型の半導体領域よりなるフローティングディフュージョン部（ＦＤ部）１２と、ＦＤ部１２に蓄積された信号電荷を掃き捨てるリセットゲート部（不図示）と、ＦＤ部１２に接続され、ＦＤ部１２に蓄積された信号電荷に応じた信号を出力するＭＯＳトランジスタからなるＭＯＳ回路（不図示）と、読み出しゲート部１１上に形成された読み出し電極１３とから構成されている。   The readout circuit 5 is provided adjacent to the readout gate portion 11 made of a P-type semiconductor region and the readout gate portion 11, and is a high-concentration N-type to which the signal charge accumulated in the photoelectric conversion element 4 is transferred. A floating diffusion portion (FD portion) 12 made of a semiconductor region, a reset gate portion (not shown) that sweeps out signal charges accumulated in the FD portion 12, and a signal that is connected to the FD portion 12 and accumulated in the FD portion 12 It is composed of a MOS circuit (not shown) composed of a MOS transistor that outputs a signal corresponding to the charge, and a read electrode 13 formed on the read gate portion 11.

尚、符号１４はＰ型の半導体領域よりなる第２の素子分離領域である。符号１５は光電変換素子４の表面側に形成された高濃度のＰ型の半導体領域よりなる正電荷蓄積領域である。   Reference numeral 14 denotes a second element isolation region made of a P-type semiconductor region. Reference numeral 15 denotes a positive charge accumulation region made of a high concentration P-type semiconductor region formed on the surface side of the photoelectric conversion element 4.

配線層１８は、４層の配線を有している。具体的には、単結晶シリコン層１上に形成された絶縁層７中において、１層目の配線１８１と、この１層目の配線１８１上に絶縁層７を介して形成された２層目の配線１８２と、この２層目の配線１８２上に絶縁層７を介して形成された３層目の配線１８３と、この３層目の配線１８３上に絶縁層７を介して形成された４層目の配線１８４とから形成されている。尚、絶縁層７上には、図示しないが、パッシベーション膜からなる平坦化膜が形成され、この平坦化膜上に接着剤層を介して支持基板１６が接着されている。   The wiring layer 18 has four layers of wiring. Specifically, in the insulating layer 7 formed on the single crystal silicon layer 1, the first layer wiring 181 and the second layer formed on the first layer wiring 181 via the insulating layer 7. Wiring 182, third-layer wiring 183 formed on the second-layer wiring 182 via the insulating layer 7, and 4 formed on the third-layer wiring 183 via the insulating layer 7. The wiring 184 of the layer is formed. Although not shown, a planarization film made of a passivation film is formed on the insulating layer 7, and the support substrate 16 is bonded to the planarization film via an adhesive layer.

このような構成の裏面照射型撮像素子３０においては、単結晶シリコン層１の裏面側からマイクロレンズ１０を通じて光電変換素子４に光が照射される。この光に応じて光電変換素子４で発生し蓄積された信号電荷は、読み出し電極１３に高電圧が印加されることにより、読み出しゲート部１１を通ってＦＤ１２へと転送され、ここに蓄積される。そして、ＦＤ部１２に蓄積された信号電荷に応じた信号がＭＯＳ回路によって出力される。信号出力後は、ＦＤ１２に蓄積された信号電荷がリセットされ、次の露光が開始される。   In the backside illumination type imaging device 30 having such a configuration, light is irradiated to the photoelectric conversion element 4 from the backside of the single crystal silicon layer 1 through the microlens 10. The signal charge generated and accumulated in the photoelectric conversion element 4 in response to this light is transferred to the FD 12 through the read gate portion 11 when a high voltage is applied to the read electrode 13 and accumulated therein. . A signal corresponding to the signal charge accumulated in the FD unit 12 is output by the MOS circuit. After the signal output, the signal charge accumulated in the FD 12 is reset, and the next exposure is started.

図２は、本発明の実施形態である裏面照射型撮像素子の周辺部の断面模式図である。尚、周辺部とは、図１に示す構成の単位画素領域３のマイクロレンズ１０に入射して集光された光が素子分離領域２にまで達してしまう程度に、該マイクロレンズ１０に入射する光の入射角が急になってしまう領域のことを示す。   FIG. 2 is a schematic cross-sectional view of a peripheral portion of a backside illumination type image sensor that is an embodiment of the present invention. Note that the peripheral portion is incident on the microlens 10 to such an extent that the light collected by being incident on the microlens 10 in the unit pixel region 3 having the configuration shown in FIG. 1 reaches the element isolation region 2. This indicates a region where the incident angle of light becomes steep.

図２に示すように、裏面照射型撮像素子３０の周辺部では、各光電変換素子４に対応する遮光膜１７の開口の大きさが、該光電変換素子４に対応するカラーフィルタ９の種類（透過波長域）に応じて異なっており、且つ、その開口の中心が該光電変換素子の中心よりも裏面照射型撮像素子３０の中心部側にずれている。   As shown in FIG. 2, in the peripheral portion of the back-illuminated image sensor 30, the size of the opening of the light shielding film 17 corresponding to each photoelectric conversion element 4 is the type of the color filter 9 corresponding to the photoelectric conversion element 4 ( The center of the opening is shifted from the center of the photoelectric conversion element toward the center of the back-illuminated image sensor 30.

遮光膜１７の開口は、これに対応するカラーフィルタを透過する光の波長が長波長のものほど小さくなっている。つまり、（Ｒカラーフィルタに対応する遮光膜の開口）＜（Ｇカラーフィルタに対応する遮光膜の開口）＜（Ｂカラーフィルタに対応する遮光膜の開口）という関係が成り立っている。各カラーフィルタ９に対応する遮光膜１７の開口の大きさは、各光電変換素子４に入射した光が素子分離領域２まで達しないように、各カラーフィルタ９の透過波長とシリコン層１の深さとによって決められる。   The opening of the light shielding film 17 is smaller as the wavelength of light transmitted through the corresponding color filter is longer. That is, the relationship of (opening of light shielding film corresponding to R color filter) <(opening of light shielding film corresponding to G color filter) <(opening of light shielding film corresponding to B color filter) is established. The size of the opening of the light shielding film 17 corresponding to each color filter 9 is set so that the light incident on each photoelectric conversion element 4 does not reach the element isolation region 2 and the transmission wavelength of each color filter 9 and the depth of the silicon layer 1. It is decided by Sato.

又、裏面照射型撮像素子３０の周辺部では、カラーフィルタ９とマイクロレンズ１０が、それぞれに対応する遮光膜１７の開口内に同一のカラーフィルタ９を透過した光のみが入射できるように、その中心がそれぞれに対応する光電変換素子４の中心よりも中心部側にずれて配置されている。   Further, at the periphery of the back-illuminated image pickup device 30, the color filter 9 and the microlens 10 can receive only light that has passed through the same color filter 9 in the corresponding openings of the light shielding film 17. The centers are arranged so as to be shifted toward the center side from the centers of the photoelectric conversion elements 4 corresponding thereto.

このように、裏面照射型撮像素子３０の周辺部では、Ｒカラーフィルタ９に対応する遮光膜１７の開口が他のカラーフィルタに対応する開口よりも小さくなっており、且つ、その中心が中心部側にずれている。このため、Ｒカラーフィルタ９に対応するマイクロレンズ１０に斜めに入射してきた光は、この遮光膜１７の開口によってその経路が制限される。この結果、図２の破線で示したように、Ｒカラーフィルタ９に対応する光電変換素子４に入射した光が素子分離領域２まで到達することがなくなり、光学的な混色を防ぐことができる。   Thus, in the peripheral part of the back-illuminated image sensor 30, the opening of the light shielding film 17 corresponding to the R color filter 9 is smaller than the openings corresponding to the other color filters, and the center thereof is the central part. It is shifted to the side. For this reason, the path of light incident obliquely on the microlens 10 corresponding to the R color filter 9 is limited by the opening of the light shielding film 17. As a result, as indicated by a broken line in FIG. 2, light incident on the photoelectric conversion element 4 corresponding to the R color filter 9 does not reach the element isolation region 2, and optical color mixing can be prevented.

Ｇカラーフィルタ９に対応する遮光膜１７の開口は、それに対応する光電変換素子４に入射した光が、Ｒカラーフィルタ９に対応する光電変換素子４に入射した光よりもシリコン層１の深くまで到達しないため、その大きさをＲカラーフィルタ９に対応する遮光膜１７の開口より大きくすることが可能となる。したがって、本実施形態のように、Ｇカラーフィルタ９に対応する開口を大きくすることで感度を向上させることができる。   The opening of the light shielding film 17 corresponding to the G color filter 9 is such that the light incident on the photoelectric conversion element 4 corresponding to the G color filter 9 is deeper in the silicon layer 1 than the light incident on the photoelectric conversion element 4 corresponding to the R color filter 9. Therefore, it is possible to make the size larger than the opening of the light shielding film 17 corresponding to the R color filter 9. Therefore, the sensitivity can be improved by increasing the opening corresponding to the G color filter 9 as in the present embodiment.

同様に、Ｂカラーフィルタ９に対応する遮光膜１７の開口は、それに対応する光電変換素子４に入射した光が、Ｇカラーフィルタ９に対応する光電変換素子４に入射した光よりもシリコン層１の深くまで到達しないため、その大きさをＧカラーフィルタ９に対応する遮光膜１７の開口より大きくすることが可能となる。したがって、本実施形態のように、Ｂカラーフィルタ９に対応する開口を大きくすることで感度を向上させることができる。   Similarly, the opening of the light shielding film 17 corresponding to the B color filter 9 is such that the light incident on the photoelectric conversion element 4 corresponding thereto corresponds to the silicon layer 1 more than the light incident on the photoelectric conversion element 4 corresponding to the G color filter 9. Therefore, it is possible to make the size larger than the opening of the light shielding film 17 corresponding to the G color filter 9. Therefore, the sensitivity can be improved by increasing the opening corresponding to the B color filter 9 as in the present embodiment.

又、裏面照射型撮像素子３０によれば、周辺部では、カラーフィルタ９とマイクロレンズ１０のそれぞれの中心がそれぞれに対応する光電変換素子４の中心よりも中心部側にずれて配置されている。このため、２種類以上のカラーフィルタ９を通過した光が光電変換素子４に入射してしまうことによる色シェーディングや、マイクロレンズ１０で入射光がケラレてしまうことによる輝度シェーディングを抑制して画質を向上させることができる。   Further, according to the back-illuminated image pickup device 30, the centers of the color filter 9 and the microlens 10 are arranged so as to be shifted from the centers of the corresponding photoelectric conversion elements 4 toward the center in the peripheral portion. . For this reason, image quality is improved by suppressing color shading caused by light that has passed through two or more color filters 9 entering the photoelectric conversion element 4 and luminance shading caused by vignetting of incident light by the microlens 10. Can be improved.

上述した裏面照射型撮像素子３０の別の実施形態について以下に説明する。
図３は、本発明の別の実施形態である裏面照射型撮像素子の中心部の断面模式図である。図４は、本発明の別の実施形態である裏面照射型撮像素子の周辺部の断面模式図である。図３において図１と同じ構成には同一符号を付し、図４において図２と同じ構成には同一符号を付してある。
図３に示す裏面照射型撮像素子３０は、図１に示した遮光膜１７を、反射防止膜８とカラーフィルタ９の間ではなく、カラーフィルタ９の上に形成し、その遮光膜１７の開口内に、マイクロレンズ１０を形成した構成となっている。 Another embodiment of the back-illuminated image sensor 30 described above will be described below.
FIG. 3 is a schematic cross-sectional view of a central portion of a backside illumination type image sensor that is another embodiment of the present invention. FIG. 4 is a schematic cross-sectional view of a peripheral portion of a backside illumination type image sensor that is another embodiment of the present invention. 3, the same components as those in FIG. 1 are denoted by the same reference numerals, and in FIG. 4, the same components as those in FIG. 2 are denoted by the same symbols.
In the backside illumination type image pickup device 30 shown in FIG. 3, the light shielding film 17 shown in FIG. 1 is formed on the color filter 9 instead of between the antireflection film 8 and the color filter 9, and the opening of the light shielding film 17 is formed. The microlens 10 is formed inside.

図４に示すように、裏面照射型撮像素子３０の周辺部では、各光電変換素子４に対応する遮光膜１７の開口の大きさが、該光電変換素子に対応するカラーフィルタ９の種類（透過波長域）に応じて異なっており、且つ、その開口の中心が該光電変換素子の中心よりも裏面照射型撮像素子３０の中心部側にずれている。   As shown in FIG. 4, in the peripheral portion of the back-illuminated image sensor 30, the size of the opening of the light shielding film 17 corresponding to each photoelectric conversion element 4 indicates the type (transmission) of the color filter 9 corresponding to the photoelectric conversion element. And the center of the opening is shifted from the center of the photoelectric conversion element toward the center of the back-illuminated image sensor 30.

遮光膜１７の開口は、これに対応するカラーフィルタを透過する光の波長が長波長のものほど小さくなっている。つまり、（Ｒカラーフィルタに対応する遮光膜の開口）＜（Ｇカラーフィルタに対応する遮光膜の開口）＜（Ｂカラーフィルタに対応する遮光膜の開口）という関係が成り立っている。各カラーフィルタ９に対応する遮光膜１７の開口の大きさは、各光電変換素子４に入射した光が素子分離領域２まで達しないように、各カラーフィルタ９の透過波長とシリコン層１の深さとによって決められる。   The opening of the light shielding film 17 is smaller as the wavelength of light transmitted through the corresponding color filter is longer. That is, the relationship of (opening of light shielding film corresponding to R color filter) <(opening of light shielding film corresponding to G color filter) <(opening of light shielding film corresponding to B color filter) is established. The size of the opening of the light shielding film 17 corresponding to each color filter 9 is set so that the light incident on each photoelectric conversion element 4 does not reach the element isolation region 2 and the transmission wavelength of each color filter 9 and the depth of the silicon layer 1. It is decided by Sato.

又、裏面照射型撮像素子３０の周辺部では、カラーフィルタ９とマイクロレンズ１０が、それぞれに対応する遮光膜１７の開口内に同一のカラーフィルタ９を透過した光のみが入射できるように、その中心がそれぞれに対応する光電変換素子４の中心よりも中心部側にずれて配置されている。   Further, at the periphery of the back-illuminated image pickup device 30, the color filter 9 and the microlens 10 can receive only light that has passed through the same color filter 9 in the corresponding openings of the light shielding film 17. The centers are arranged so as to be shifted toward the center side from the centers of the photoelectric conversion elements 4 corresponding thereto.

このような構成であっても、入射光の波長に依存した光学的な混色を防止し、感度を向上させることが可能となる。又、図３，４に示した構成によれば、遮光膜１７を形成した後、その開口を埋めるようにマイクロレンズ１０を形成すれば良いため、製造が容易になると共に、マイクロレンズ１０の曲率を色に応じて調整することも可能となる。   Even with such a configuration, it is possible to prevent optical color mixing depending on the wavelength of incident light and improve sensitivity. Further, according to the configuration shown in FIGS. 3 and 4, since the microlens 10 may be formed so as to fill the opening after the light shielding film 17 is formed, the manufacturing becomes easy and the curvature of the microlens 10 is increased. Can be adjusted according to the color.

尚、以上の説明では読み出し回路５がＭＯＳ回路の例を示したが、ＦＤ部１２に蓄積された信号電荷をＣＣＤ（Charge Coupled Device）によってアンプまで転送し、このアンプから該信号電荷に応じた信号を出力させる読み出し回路を採用しても良い。   In the above description, the example in which the readout circuit 5 is a MOS circuit is shown. However, the signal charge accumulated in the FD unit 12 is transferred to an amplifier by a CCD (Charge Coupled Device), and the signal charge is transferred from the amplifier according to the signal charge. A readout circuit that outputs a signal may be employed.

又、以上の説明では、裏面照射型撮像素子３０の周辺部において、カラーフィルタ９とマイクロレンズ１０の両方の中心を、中心部側にずらすものとしたが、これらのうちいずれか一方のみを中心部側にずらすだけでも、画質向上という効果を得ることができる。   In the above description, the centers of both the color filter 9 and the microlens 10 are shifted to the center side in the peripheral portion of the back-illuminated image sensor 30, but only one of them is the center. The effect of improving the image quality can be obtained only by shifting to the part side.

又、カラーフィルタ９として３種類のカラーフィルタを用いた例を示したが、これは４種類以上であっても良い。   Moreover, although the example which used three types of color filters as the color filter 9 was shown, this may be four or more types.

本発明の実施形態である裏面照射型撮像素子の中心部の断面模式図Schematic cross-sectional view of the center of a backside illuminated image sensor that is an embodiment of the present invention 本発明の実施形態である裏面照射型撮像素子の周辺部の断面模式図Schematic cross-sectional view of the periphery of a backside illuminated image sensor that is an embodiment of the present invention 本発明の別の実施形態である裏面照射型撮像素子の中心部の断面模式図Schematic cross-sectional view of the center of a backside illuminated image sensor that is another embodiment of the present invention 本発明の別の実施形態である裏面照射型撮像素子の周辺部の断面模式図Schematic cross-sectional view of the periphery of a backside illuminated image sensor that is another embodiment of the present invention

符号の説明Explanation of symbols

１ シリコン層
４ 光電変換素子
５ 読み出し回路
９ カラーフィルタ
１７ 遮光膜
３０ 裏面照射型撮像素子 DESCRIPTION OF SYMBOLS 1 Silicon layer 4 Photoelectric conversion element 5 Read-out circuit 9 Color filter 17 Light shielding film 30 Back surface illumination type image pick-up element

Claims (8)

半導体基板の裏面側から光を照射し、前記半導体基板内に形成された多数の光電変換素子の各々で前記光に応じて発生した電荷に応じた信号を、前記半導体基板の表面側に形成した読み出し回路から読み出して撮像を行う裏面照射型撮像素子であって、
前記多数の光電変換素子の各々に対応させて前記半導体基板の裏面上方に形成されたカラーフィルタと、
前記半導体基板の裏面上方に形成され、前記多数の光電変換素子の各々に対応して開口が形成された遮光膜とを備え、
多数の前記カラーフィルタが、それぞれ異なる色の光を透過する少なくとも３種類のカラーフィルタを含み、
前記裏面照射型撮像素子の周辺部にある前記光電変換素子に対応する前記遮光膜の開口は、該光電変換素子に対応するカラーフィルタの種類に応じて大きさが異なっており、且つ、その中心が該光電変換素子の中心よりも前記裏面照射型撮像素子の中心部側にずれている裏面照射型撮像素子。 Light was irradiated from the back side of the semiconductor substrate, and a signal corresponding to the charge generated according to the light in each of a number of photoelectric conversion elements formed in the semiconductor substrate was formed on the surface side of the semiconductor substrate. A back-illuminated imaging device that reads from a readout circuit and performs imaging,
A color filter formed on the back surface of the semiconductor substrate corresponding to each of the plurality of photoelectric conversion elements;
A light-shielding film formed above the back surface of the semiconductor substrate and having an opening formed corresponding to each of the plurality of photoelectric conversion elements;
A number of the color filters include at least three kinds of color filters that transmit light of different colors,
The opening of the light-shielding film corresponding to the photoelectric conversion element in the peripheral part of the back-illuminated imaging element has a different size depending on the type of color filter corresponding to the photoelectric conversion element, and its center Is a back-illuminated image sensor that is shifted to the center of the back-illuminated image sensor from the center of the photoelectric conversion element. 請求項１記載の裏面照射型撮像素子であって、
前記周辺部にある前記光電変換素子に対応する前記遮光膜の開口が、該光電変換素子に対応するカラーフィルタを透過する光の波長が長波長に向かうほど小さくなっている裏面照射型撮像素子。 The back-illuminated image sensor according to claim 1,
The backside-illuminated imaging element in which the opening of the light shielding film corresponding to the photoelectric conversion element in the peripheral portion becomes smaller as the wavelength of light transmitted through the color filter corresponding to the photoelectric conversion element becomes longer. 請求項１又は２記載の裏面照射型撮像素子であって、
前記遮光膜が、前記半導体基板と前記カラーフィルタとの間に形成されている裏面照射型撮像素子。 The back-illuminated image sensor according to claim 1 or 2,
A backside-illuminated image sensor in which the light shielding film is formed between the semiconductor substrate and the color filter. 請求項１〜３のいずれか１項記載の裏面照射型撮像素子であって、
前記周辺部にある前記光電変換素子に対応する前記カラーフィルタの中心が、該光電変換素子の中心よりも前記中心部側にずれている裏面照射型撮像素子。 The back-illuminated image sensor according to any one of claims 1 to 3,
A back-illuminated imaging device in which the center of the color filter corresponding to the photoelectric conversion device in the peripheral portion is shifted to the center portion side from the center of the photoelectric conversion device. 請求項１〜４のいずれか１項記載の裏面照射型撮像素子であって、
前記カラーフィルタの上に、各光電変換素子に対応させて形成されたマイクロレンズを備え、
前記周辺部にある前記光電変換素子に対応する前記マイクロレンズの中心が、該光電変換素子の中心よりも前記中心部側にずれている裏面照射型撮像素子。 The back-illuminated image sensor according to any one of claims 1 to 4,
On the color filter, provided with a microlens formed corresponding to each photoelectric conversion element,
A back-illuminated image sensor in which the center of the microlens corresponding to the photoelectric conversion element in the peripheral portion is shifted to the center side from the center of the photoelectric conversion element. 請求項１又は２記載の裏面照射型撮像素子であって、
前記遮光膜が前記カラーフィルタの上に形成されており、
前記遮光膜の開口内に形成されたマイクロレンズを備える裏面照射型撮像素子。 The back-illuminated image sensor according to claim 1 or 2,
The light-shielding film is formed on the color filter;
A back-illuminated imaging device comprising a microlens formed in the opening of the light shielding film. 請求項６記載の裏面照射型撮像素子であって、
前記周辺部にある前記光電変換素子に対応する前記カラーフィルタの中心が、該光電変換素子の中心よりも前記中心部側にずれている裏面照射型撮像素子。 The back-illuminated image sensor according to claim 6,
A back-illuminated imaging device in which the center of the color filter corresponding to the photoelectric conversion device in the peripheral portion is shifted to the center portion side from the center of the photoelectric conversion device. 請求項６又は７記載の裏面照射型撮像素子であって、
前記周辺部にある前記光電変換素子に対応する前記マイクロレンズの中心が、該光電変換素子の中心よりも前記中心部側にずれている裏面照射型撮像素子。 The back-illuminated image sensor according to claim 6 or 7,
A back-illuminated image sensor in which the center of the microlens corresponding to the photoelectric conversion element in the peripheral portion is shifted to the center side from the center of the photoelectric conversion element.
JP2008001250A 2008-01-08 2008-01-08 Back-illuminated image sensor Pending JP2009164385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008001250A JP2009164385A (en) 2008-01-08 2008-01-08 Back-illuminated image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008001250A JP2009164385A (en) 2008-01-08 2008-01-08 Back-illuminated image sensor

Publications (2)

Publication Number Publication Date
JP2009164385A true JP2009164385A (en) 2009-07-23
JP2009164385A5 JP2009164385A5 (en) 2010-08-05

Family

ID=40966653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008001250A Pending JP2009164385A (en) 2008-01-08 2008-01-08 Back-illuminated image sensor

Country Status (1)

Country Link
JP (1) JP2009164385A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6444098A (en) * 1987-08-12 1989-02-16 Fujikura Ltd Superconducting electromagnetic shielding material
JP2010199668A (en) * 2009-02-23 2010-09-09 Sony Corp Solid-state imaging device and electronic apparatus
US7989908B2 (en) * 2006-12-27 2011-08-02 Dongbu Hitek Co., Ltd. Image sensor and method for manufacturing the same
JP2012169530A (en) * 2011-02-16 2012-09-06 Sony Corp Solid state image sensor, manufacturing method therefor, and electronic apparatus
US8928795B2 (en) 2010-02-25 2015-01-06 Nikon Corporation Backside illumination image sensor and image-capturing device
JP2016048801A (en) * 2015-12-02 2016-04-07 ソニー株式会社 Solid-state imaging device, manufacturing method thereof, and electronic apparatus
JP2016096359A (en) * 2016-02-10 2016-05-26 キヤノン株式会社 Solid-state imaging device
JP2017055127A (en) * 2016-10-28 2017-03-16 ソニー株式会社 Solid-state imaging device and electronic device
US9601539B2 (en) 2010-03-31 2017-03-21 Sony Corporation Solid-state imaging device, method of manufacturing the same, and electronic equipment
JP2017143517A (en) * 2017-02-09 2017-08-17 株式会社ニコン Imaging device and imaging apparatus
US9893106B2 (en) 2013-05-24 2018-02-13 Sony Corporation Solid-state imaging device and electronic apparatus
JP2018129525A (en) * 2018-03-28 2018-08-16 ソニー株式会社 Solid state image sensor, and electronic apparatus
WO2019038999A1 (en) * 2017-08-24 2019-02-28 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging device and production method therefor
WO2021215303A1 (en) * 2020-04-20 2021-10-28 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging element and electronic apparatus
WO2023149154A1 (en) * 2022-02-03 2023-08-10 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging element and electronic apparatus

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63170959A (en) * 1987-01-08 1988-07-14 Matsushita Electronics Corp Color solid-state image sensing device
JP2003018476A (en) * 2001-07-02 2003-01-17 Dainippon Printing Co Ltd Imaging device
JP2003338615A (en) * 2002-05-20 2003-11-28 Sony Corp Solid-state imaging device
JP2004235621A (en) * 2003-01-06 2004-08-19 Koji Eto Back-illuminated image sensor
JP2005347708A (en) * 2004-06-07 2005-12-15 Sony Corp Solid-state imaging device and manufacturing method thereof
JP2006019588A (en) * 2004-07-02 2006-01-19 Sony Corp Solid-state imaging device and manufacturing method thereof
JP2006032497A (en) * 2004-07-13 2006-02-02 Sony Corp Solid-state imaging device, solid-state imaging device, and method for manufacturing solid-state imaging device
JP2006080457A (en) * 2004-09-13 2006-03-23 Sony Corp Solid-state imaging device and manufacturing method thereof
JP2006191023A (en) * 2004-12-30 2006-07-20 Dongbuanam Semiconductor Inc CMOS image sensor and manufacturing method thereof

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63170959A (en) * 1987-01-08 1988-07-14 Matsushita Electronics Corp Color solid-state image sensing device
JP2003018476A (en) * 2001-07-02 2003-01-17 Dainippon Printing Co Ltd Imaging device
JP2003338615A (en) * 2002-05-20 2003-11-28 Sony Corp Solid-state imaging device
JP2004235621A (en) * 2003-01-06 2004-08-19 Koji Eto Back-illuminated image sensor
JP2005347708A (en) * 2004-06-07 2005-12-15 Sony Corp Solid-state imaging device and manufacturing method thereof
JP2006019588A (en) * 2004-07-02 2006-01-19 Sony Corp Solid-state imaging device and manufacturing method thereof
JP2006032497A (en) * 2004-07-13 2006-02-02 Sony Corp Solid-state imaging device, solid-state imaging device, and method for manufacturing solid-state imaging device
JP2006080457A (en) * 2004-09-13 2006-03-23 Sony Corp Solid-state imaging device and manufacturing method thereof
JP2006191023A (en) * 2004-12-30 2006-07-20 Dongbuanam Semiconductor Inc CMOS image sensor and manufacturing method thereof

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6444098A (en) * 1987-08-12 1989-02-16 Fujikura Ltd Superconducting electromagnetic shielding material
US7989908B2 (en) * 2006-12-27 2011-08-02 Dongbu Hitek Co., Ltd. Image sensor and method for manufacturing the same
JP2010199668A (en) * 2009-02-23 2010-09-09 Sony Corp Solid-state imaging device and electronic apparatus
USRE46729E1 (en) 2009-02-23 2018-02-20 Sony Corporation Solid-state imaging device and electronic apparatus having a light blocking part
US8493452B2 (en) 2009-02-23 2013-07-23 Sony Corporation Solid-state imaging device and electronic apparatus having a light blocking part
USRE46769E1 (en) 2009-02-23 2018-03-27 Sony Corporation Solid-state imaging device and electronic apparatus having a light blocking part
US11979672B2 (en) 2010-02-25 2024-05-07 Nikon Corporation Backside illumination image sensor and image-capturing device
US9184197B2 (en) 2010-02-25 2015-11-10 Nikon Corporation Backside illumination image sensor and image-capturing device
US8928795B2 (en) 2010-02-25 2015-01-06 Nikon Corporation Backside illumination image sensor and image-capturing device
US9466633B2 (en) 2010-02-25 2016-10-11 Nikon Corporation Backside illumination image sensor and image-capturing device
US10777595B2 (en) 2010-02-25 2020-09-15 Nikon Corporation Backside illumination image sensor and image-capturing device
US9704902B2 (en) 2010-02-25 2017-07-11 Nikon Corporation Backside illumination image sensor and image-capturing device
US11601624B2 (en) 2010-02-25 2023-03-07 Nikon Corporation Backside illumination image sensor and image-capturing device
US10204949B2 (en) 2010-02-25 2019-02-12 Nikon Corporation Backside illumination image sensor and image-capturing device
US9601539B2 (en) 2010-03-31 2017-03-21 Sony Corporation Solid-state imaging device, method of manufacturing the same, and electronic equipment
US9666632B2 (en) 2010-03-31 2017-05-30 Sony Corporation Solid-state imaging device, method of manufacturing the same, and electronic equipment
JP2012169530A (en) * 2011-02-16 2012-09-06 Sony Corp Solid state image sensor, manufacturing method therefor, and electronic apparatus
US11894406B2 (en) 2013-05-24 2024-02-06 Sony Group Corporation Solid-state imaging device and electronic apparatus
US11569286B2 (en) 2013-05-24 2023-01-31 Sony Corporation Solid-state imaging device and electronic apparatus
US9893106B2 (en) 2013-05-24 2018-02-13 Sony Corporation Solid-state imaging device and electronic apparatus
US10615207B2 (en) 2013-05-24 2020-04-07 Sony Corporation Solid-state imaging device and electronic apparatus
US10319769B2 (en) 2013-05-24 2019-06-11 Sony Corporation Solid-state imaging device and electronic apparatus
JP2016048801A (en) * 2015-12-02 2016-04-07 ソニー株式会社 Solid-state imaging device, manufacturing method thereof, and electronic apparatus
JP2016096359A (en) * 2016-02-10 2016-05-26 キヤノン株式会社 Solid-state imaging device
JP2017055127A (en) * 2016-10-28 2017-03-16 ソニー株式会社 Solid-state imaging device and electronic device
JP2017143517A (en) * 2017-02-09 2017-08-17 株式会社ニコン Imaging device and imaging apparatus
WO2019038999A1 (en) * 2017-08-24 2019-02-28 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging device and production method therefor
JP2018129525A (en) * 2018-03-28 2018-08-16 ソニー株式会社 Solid state image sensor, and electronic apparatus
WO2021215303A1 (en) * 2020-04-20 2021-10-28 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging element and electronic apparatus
WO2023149154A1 (en) * 2022-02-03 2023-08-10 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging element and electronic apparatus

Similar Documents

Publication Publication Date Title
JP2009164385A (en) Back-illuminated image sensor
JP4826111B2 (en) Solid-state imaging device, manufacturing method of solid-state imaging device, and image photographing apparatus
JP4507769B2 (en) Solid-state image sensor, camera module, and electronic device module
KR101893325B1 (en) Solid-state imaging device, method of manufacturing the same, and electronic apparatus
KR102650235B1 (en) Solid-state imaging element, method for manufacturing same, and electronic device
TWI532160B (en) Solid-state image sensing device and method of manufacturing solid-state image sensing device
KR102586247B1 (en) Solid-state imaging device and imaging device
JP5793688B2 (en) Solid-state imaging device
US8415602B2 (en) Solid-state imaging device and electronic apparatus having an element isolator in a semiconductor substrate
KR100962449B1 (en) Photoelectric conversion layer stack type color solid-state imaging device
JP4950703B2 (en) Solid-state image sensor
JP4751865B2 (en) Back-illuminated solid-state imaging device and manufacturing method thereof
TW201535695A (en) Solid-state image sensing device
WO2014002826A1 (en) Solid-state imaging element, method for manufacturing solid-state imaging element, and electronic instrument
JP2012033583A (en) Solid-state imaging device, method for manufacturing the same, and imaging apparatus
JP2008227250A (en) Composite type solid-state image sensor
JP2010278472A (en) Method for manufacturing solid-state imaging device
KR100791346B1 (en) Image sensor manufacturing method and image sensor manufactured accordingly
JP5287923B2 (en) Solid-state imaging device, manufacturing method of solid-state imaging device, and image photographing apparatus
JP4404561B2 (en) MOS type color solid-state imaging device
JP2005347707A (en) Solid-state imaging device and manufacturing method thereof
JP2011014773A (en) Solid-state image pick-up device and method for manufacturing the same
JP5282797B2 (en) Solid-state imaging device, manufacturing method of solid-state imaging device, and image photographing apparatus
CN104170088B (en) Solid-state imaging apparatus and electronic installation
JP2004186311A (en) Mos-type image sensor and digital camera

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100621

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100621

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20100621

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20100708

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100720

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100827

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20101012