JP2009149989A - Thin film deposition apparatus and thin film deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin film vapor deposition system and a vapor deposition method which can improve the quality of the formed thin film. <P>SOLUTION: Regarding the thin film vapor deposition system and vapor deposition method, the system comprises: a reaction chamber; a susceptor rotatably loaded inside the reaction chamber and mounted with at least one substrate; a gas feeding part loaded at the upper part of the reaction chamber and independently feeding a plurality of gases into the reaction chamber; a separately exhausting part loaded at the upper part of a susceptor so as to correspond to the boundary of each region fed with the plurality of gases and provided with an exhaust line exhausting the gases at the periphery thereof; and a vacuum pump part providing inhalation force to the separately exhausting part, wherein the source gas and the reaction gas can be separately exhausted. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a thin film deposition apparatus and a thin film deposition method, and more particularly, improves the film deposition quality by separating and exhausting a source gas and a reactive gas and preventing the source gas and the reactive gas from mixing with each other. Provided are a thin film deposition apparatus and a thin film deposition method that can be performed.

In general, in order to deposit a thin film having a predetermined thickness on a substrate such as a semiconductor wafer or glass, a physical vapor deposition method (PVD: Physical Vapor) using physical collision such as sputtering is used. A thin film manufacturing method using a chemical vapor deposition (CVD) method using a chemical reaction or a chemical reaction is used.

  Here, as the chemical vapor deposition method, an atmospheric pressure chemical vapor deposition method (APCVD), a low pressure chemical vapor deposition method (LPCVD: Low Pressure CVD), a plasma organic chemical vapor deposition method (Plasma Enhanced). CVD). Among these, the plasma organic chemical vapor deposition method has many advantages in that low temperature deposition is possible and the thin film formation speed is high.

  However, the design rule (Design Rule) of the semiconductor element has rapidly decreased, and a thin film with a fine pattern has been demanded, and the level difference in the region where the thin film is formed has become extremely large. As a result, not only can the fine pattern of the thickness of the atomic layer be formed extremely uniformly, but also the use of an atomic layer deposition (ALD) method with excellent step coverage (Step Coverage) is increasing ( For example, see Patent Document 1.) This method is used for the deposition of thin films such as gate oxide films, capacitor dielectric films, and diffusion barrier films in semiconductor manufacturing processes.

  Atomic layer deposition (ALD) is similar to general chemical vapor deposition (CVD) in that it uses chemical reactions between gas molecules. However, in the normal chemical vapor deposition method, a large number of gas molecules are simultaneously injected into the chamber, and the reaction product generated from above the wafer is deposited on the wafer. After the material is injected into the chamber, it is purged, leaving only the physically adsorbed gas at the top of the heated wafer, and then injecting another gaseous material only on the top surface of the wafer. The chemical reaction products generated are evaporated. Therefore, this point is different.

A thin film realized by such an atomic layer deposition method has an excellent step coverage characteristic, and particularly has a merit that a pure thin film having an extremely low impurity content can be realized. In the spotlight.
JP 2007-274002 A

  However, the conventional thin film deposition apparatus injects different types of reaction gas and purge gas while the gas supply injector rotates at a high speed, so that the reaction gas is mixed with each other to dilute the concentration of the reaction gas. Unnecessary reactions occurred, resulting in a problem that the deposition quality on the substrate was lowered.

  In order to prevent such reaction between the reaction gases, it has also been proposed to form a plurality of exhaust holes around the reaction chamber, but this also fundamentally blocks the mixing of different types of reaction gases. Is insufficient.

  In order to prevent such a reaction gas mixing phenomenon, a plurality of separation cells can be formed in the reaction chamber, and different types of reaction gas and purge gas can be supplied to each separation cell. Since the reaction gas and the purge gas must be sequentially deposited, there is a problem in that the process time is increased, the productivity is lowered, and the structure of the reaction chamber is complicated.

  On the other hand, if different types of reaction gases react with each other, particles are formed and the deposition quality on the substrate is lowered. Therefore, the conventional technique has a problem that such particles cannot be effectively removed. That is, when exhausting toward the lower part of the reaction chamber, the possibility that the impurities such as particles existing in the upper space of the substrate are pushed away by the gas flow to be exhausted and damage the surface of the substrate is eliminated. I could not.

  Further, the conventional thin film deposition apparatus has a problem that the lifetime of the vacuum pump is shortened by impurities such as particles.

  As one embodiment of the present invention, the invention has been devised to solve the above-described problems of the prior art, and the source gas and the reaction gas remaining in the reaction chamber are separated and exhausted, thereby exhausting. Provided are a thin film deposition apparatus and a thin film deposition method capable of reducing unnecessary reactions between gases to be produced.

  Further, as one embodiment of the present invention, a purge gas region or a separation region is formed between a region where the source gas exists and a region where the reaction gas exists, thereby separating and exhausting the source gas and the reaction gas. A thin film deposition apparatus and a thin film deposition method capable of simplifying the structure of a chamber are provided.

  Further, as one embodiment of the present invention, the source gas and the reaction gas to be exhausted are separated and exhausted to block the generation of impurities such as particles, thereby preventing the vacuum pump from being damaged and extending its life. A vapor deposition apparatus and a thin film vapor deposition method are provided.

  Further, as one embodiment of the present invention, a mechanical partition is formed along the inner wall surface of the reaction chamber, and the exhaust hole formed around the reaction chamber is separated into a source gas exhaust hole and a reaction gas exhaust hole by the partition. Thus, it is possible to provide a thin film deposition apparatus and a thin film deposition method capable of reducing the reaction between the source gas and the exhaust gas.

  Further, as one embodiment of the present invention, a separation exhaust part including a source gas exhaust line and a reaction gas exhaust line is formed in the upper part of the reaction chamber, so that the source gas and the reaction gas react with each other and impurities such as particles The present invention provides a thin film deposition apparatus and a thin film deposition method that can quickly remove the surface of the substrate and reduce damage to the surface of the substrate due to particles or the like.

  Moreover, as one embodiment of the present invention, a thin film deposition apparatus and a thin film deposition method capable of improving the deposition quality of a substrate are provided.

  Therefore, as one embodiment of the present invention, a reaction chamber, a susceptor that is rotatably mounted in the reaction chamber and on which at least one substrate is placed, and an upper portion of the reaction chamber, A gas supply unit that independently supplies a plurality of gases to the separator, and a separation unit that includes an exhaust line that is mounted on the susceptor so as to correspond to boundaries between the regions to which the plurality of gases are supplied and exhausts surrounding gases. There is provided a thin film deposition apparatus comprising: an exhaust part; and a vacuum pump part that provides suction to the separation exhaust part.

  By configuring as described above, the remaining source gas and the reactive gas can be separated and exhausted, and the source gas and the reactive gas can be prevented from reacting with each other.

  Here, the exhaust line may divide the interior of the reaction chamber into a source gas region, a reaction gas region, and a purge gas region, and the source gas region and the reaction gas region may be separated from each other by the purge gas region. .

  Thus, since the purge gas region acts as a separation region that separates the source gas region and the reactive gas region between the source gas region and the reactive gas region, the exhausted source gas and reactive gas Can be effectively blocked from mixing.

  In addition, the exhaust line can suck and discharge impurities or particles present on the substrate placed on the susceptor. That is, by sucking impurities and particles in the direction opposite to the substrate and discharging them to the outside, it is possible to reduce the damage of the surface of the substrate due to impurities in the discharge process of impurities and the like.

  Meanwhile, a discharge line that connects the exhaust line of the separation exhaust unit and the vacuum pump unit is provided, one end of the discharge line passes through the upper part of the gas supply unit and is connected to the exhaust line, and the other end is It is preferable to connect to the vacuum pump unit. This is because the remaining source gas, reaction gas, and the like are exhausted toward the upper part of the reaction chamber, whereby the exhaust structure inside the reaction chamber can be simplified.

  Meanwhile, an exhaust hole formed at an edge of the reaction chamber and connected to the vacuum pump unit may be provided. Thus, by forming an exhaust hole at the lower edge of the reaction chamber, the source gas and the reaction gas existing at the lower portion of the reaction chamber at a distance relatively far from the exhaust line can be effectively separated and exhausted. Can do.

  A partition wall may be formed in the reaction chamber to prevent mixing of gas exhausted around the susceptor. At this time, it is preferable that the partition walls are located between the exhaust lines and are formed at least at two locations so as to face each other. By forming such a mechanical partition wall, it is possible to prevent the source gas and the reaction gas that are exhausted through the exhaust hole from being mixed.

  Meanwhile, the gas supply unit sequentially includes a source gas region for supplying a source gas, a first purge gas region for supplying a purge gas, a reaction gas region for supplying a reaction gas, and a second purge gas region for supplying a purge gas, The separation exhaust unit includes a source gas exhaust line formed on a bottom surface of the gas supply unit corresponding to a boundary between the source gas region and the first and second purge gas regions, and the reaction gas region and the first and second purge gases. A reaction gas exhaust line formed on the bottom surface of the gas supply unit corresponding to the boundary with the region may be provided.

  By configuring as described above, it is possible to prevent the remaining source gas and the reaction gas from mixing without a mechanical partition, and to simplify the internal structure of the reaction chamber.

  The gas supply unit corresponding to the source gas region, the reaction gas region, and the first and second purge gas regions is preferably formed with a plurality of injection holes for injecting gas into the reaction chamber. . That is, by forming a plurality of gas injection holes in the gas supply unit, the gas supply unit can function as a shower-head.

  Here, the source gas exhaust line is formed through a boundary between the source gas region and the first purge gas region and a boundary between the source gas region and the second purge gas region, and the reaction gas The exhaust line is preferably formed through a boundary between the reaction gas region and the first purge gas region and a boundary between the reaction gas region and the second purge gas region.

  Meanwhile, a first discharge line formed at the gas supply unit and connected at one end to the source gas exhaust line, and a second discharge line connected at one end to the reaction gas exhaust line, the vacuum pump unit includes: A first vacuum pump connected to the other end of the first discharge line and a second vacuum pump connected to the other end of the second discharge line can be provided.

  Also, formed at the edge of the reaction chamber so as to correspond to the source gas region, and formed at the edge of the reaction chamber so as to correspond to the first exhaust hole connected to the first vacuum pump and the reaction gas region. And a second exhaust hole connected to the second vacuum pump. This is to prevent the source gas and the reaction gas exhausted through the first and second exhaust holes from being mixed by separating the formation positions of the first and second exhaust holes.

  Here, a partition wall that prevents mixing of the source gas and the reaction gas is formed in the reaction chamber, and the partition wall is preferably located in the first purge gas region and the second purge gas region.

  Meanwhile, the source gas exhaust line can exhaust the source gas and the purge gas, and the reaction gas exhaust line can exhaust the reaction gas and the purge gas. That is, the source gas region and the reaction gas region can be separated by using a region where the gas is relatively little or not present in the reaction chamber, and it is not necessary to form a separate mechanical partition.

  Meanwhile, as another embodiment of the present invention, a source gas region for supplying a source gas to the upper portion of the reaction chamber, a first purge gas region for supplying a purge gas, a reaction gas region for supplying a reaction gas, and a first gas for supplying a purge gas. Two purge gas regions are sequentially formed, and a susceptor on which at least one substrate is placed is rotated in the reaction chamber, and the purge gas region is rotated through the source gas region, the reaction gas region, and the first and second purge gas regions. A source gas exhaust line is formed on the bottom surface of the gas supply unit so as to supply a source gas, the reaction gas, and the purge gas onto the susceptor and corresponding to a boundary between the source gas region and the first and second purge gas regions. And a reaction formed on the bottom surface of the gas supply unit corresponding to the boundary between the reaction gas region and the first and second purge gas regions. To provide a thin film deposition method comprising evacuating the surrounding gas from the reaction chamber by using a scan exhaust line.

  According to the present invention, as described above and as described below, the remaining source gas and the reactive gas can be separated and exhausted to prevent the source gas and the reactive gas from reacting with each other. The effect that it can be obtained.

  Hereinafter, the configuration and operation according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The following description is one of various aspects of the claimed invention, and the following description forms part of the detailed description of the invention. Therefore, the present invention should not be construed as being limited to the embodiments described below. The present invention can be implemented in various ways without departing from the gist of the present invention.

  However, in the description of the present invention, a specific description regarding a known function or configuration may be omitted to clarify the gist of the present invention.

  FIG. 1 is a longitudinal sectional view schematically showing a thin film deposition apparatus according to an embodiment of the present invention. FIG. 2 is a cross-sectional view taken along the cutting line II-II in FIG. 1 and shows a gas supply unit in which a separation exhaust unit according to an embodiment of the present invention is formed. FIG. 3 is a cross-sectional view taken along section line III-III in FIG. 1 and shows the relationship between the inside of the reaction chamber and the separation exhaust section of the thin film deposition apparatus according to one embodiment of the present invention.

  First, referring to FIG. 1, a thin film deposition apparatus 100 according to an embodiment of the present invention includes a reaction chamber 110 that forms a reaction chamber R, a reaction chamber 110 that is rotatably mounted, and at least one substrate W. Is mounted on the upper part of the reaction chamber 110, and a gas supply unit 130 for supplying a plurality of gases into the reaction chamber R, so as to correspond to the boundaries between the regions to which the plurality of gases are supplied. The susceptor 120 is attached to the upper part of the susceptor 120 and has an exhaust line 141 and 142 for exhausting surrounding gas, an exhaust hole 111 formed at the edge of the reaction chamber 110, and an input to the separation exhaust part 140. A vacuum pump unit 150 to be provided.

  Here, the plurality of gases are preferably source gas SG, reaction gas RG, and purge gas PG. The exhaust lines 141 and 142 include a source gas exhaust line 141 and a reaction gas exhaust line 142. In addition, the source gas exhaust line 141 and the reactive gas exhaust line 142 may be formed to face each other with a certain distance therebetween.

  By configuring as described above, the remaining source gas SG and reaction gas RG can be separated and exhausted. Thereby, it can prevent that source gas SG and reaction gas RG mix and react with each other.

  The reaction chamber 110 is a substantially cylindrical container having a reaction chamber R in which a vapor deposition reaction takes place. A gas supply unit 130 is attached to the opened upper end. In this way, the reaction chamber 110 and the gas supply unit 130 are coupled to each other, thereby forming a sealed reaction chamber R.

  The reaction chamber R of the reaction chamber 110 is preferably formed in a substantially circular shape when viewed from the gas supply unit 130 side. Such a shape of the reaction chamber R enables smooth rotation of the gas supply unit 130 and / or the susceptor 120. In other words, the rotational movement of the gas supply unit 130 and / or the susceptor 120 is smoothed and compensated.

  On the other hand, a substantially disc-shaped susceptor 120 is attached to the lower part of the reaction chamber R. As shown in FIG. 1, the susceptor 120 is connected to a rotating shaft 121 installed through the lower center of the reaction chamber 110. The susceptor 120 is installed in the reaction chamber R in a rotatable state. The gas supply unit 130 can be rotated to cause the source gas SG and the reaction gas RG to react with each other. In the thin film deposition apparatus 100 according to an embodiment of the present invention, it is preferable to rotate the susceptor 120.

  A substrate W to be deposited is placed on the susceptor 120. As shown in FIG. 3, the substrates W to be placed can be arranged on the susceptor 120 at regular intervals. Referring to FIG. 3, four substrates W are placed on the susceptor 120. However, the number of such substrates W is only one example. For example, according to the size of the substrate W or the reaction chamber R, various numbers of substrates W such as six or eight can be mounted.

  Here, it is preferable that a constant interval is formed between the edge of the susceptor 120 and the inner wall of the reaction chamber 110. That is, the size of the susceptor 120 is preferably smaller than the size of the reaction chamber R. This is because if the susceptor 120 is larger than or equal to the reaction chamber R, the inner wall of the reaction chamber R may collide with the susceptor 120 during the rotational movement of the susceptor 120. This is because the deposition quality of the thin film may be deteriorated by the fine particles generated by the collision.

  On the other hand, the susceptor 120 can move up and down as well as rotating. That is, the reaction state or film formation quality may vary depending on the distance between the gas supply unit 130 and the substrate W. For this reason, it is preferable that the optimum reaction position can be found by moving the susceptor 120 up and down.

  A heater 123 for heating the substrate W to generate the temperature inside the reaction chamber R to an optimum reaction temperature can be installed below the susceptor 120.

  The heater 123 performs a function of heating the substrate W to a sufficient reaction temperature. In some cases, a separate heater for heating the reaction chamber 110 or the reaction chamber R to the reaction temperature may be further installed.

  The heater 123 is formed at a predetermined interval from the bottom surface of the reaction chamber R. In order to effectively heat the substrate W, it is preferable to install the heater 123 near the susceptor 120 rather than the bottom surface of the reaction chamber R. However, if the distance between the heater 123 and the bottom surface of the reaction chamber R is reduced, the effect that the reaction chamber R is directly heated by the heater 123 can also be obtained. By doing in this way, it becomes unnecessary to install a separate heater for heating the reaction chamber R.

  On the other hand, a separate heater may be installed to heat the reaction chamber R. In this case, the installation takes time and the size of the reaction chamber R may be a problem for the installation. In other words, it is necessary to consider the convenience of installation or the size of the reaction chamber R. Therefore, heaters can be attached to the outer surface of the reaction chamber 110 at regular intervals.

  Partitions 112a and 112b can be formed in a space formed between the susceptor 120 and the inner wall of the reaction chamber R. The partition walls 112a and 112b are physical and mechanical. Such physical and mechanical walls can also serve to separate the space inside the reaction chamber R. A detailed description of the partition walls 112a and 112b will be described later.

  In the bottom surface of the reaction chamber R, one or a plurality of exhaust holes 111 are formed. The exhaust hole 111 is for exhausting the gas remaining in the reaction chamber R after the vapor deposition reaction to the outside of the reaction chamber 110, and a detailed description thereof will be described later.

  Hereinafter, the gas supply unit 130 that supplies and exhausts gas into the reaction chamber R will be described in detail with reference to the drawings.

  1 and 2, the gas supply unit 130 that forms the ceiling of the reaction chamber R has a substantially disc shape. On the inner or bottom surface of the gas supply unit 130, a separation exhaust unit 140 and gas injection holes 131a to 131d for supplying gas are formed. Thereby, the separation exhaust part 140 and the gas injection holes 131a to 131d for gas supply are connected to the reaction chamber R.

  Here, the gas injection holes 131a to 131d include a source gas injection hole 131a, a reaction gas injection hole 131b, and purge gas injection holes 131c and 131d, and are formed as a plurality of fine holes or / and injection holes. The gas injection holes 131 a to 131 d can be formed uniformly over the entire inner surface of the gas supply unit 130. By forming the plurality of gas injection holes 131a to 131d in this manner, the gas supply unit 130 can function as a shower head.

  At this time, the source gas injection hole 131a is in the source gas area SA, the reaction gas injection hole 131b is in the reaction gas area RA, and the purge gas injection holes 131c and 131d are in positions corresponding to the first purge gas area PA1 and the second purge gas area PA2. Is formed.

  The source gas region SA, the reaction gas region RA, and the purge gas regions PA1, PA2 are partitioned by the source gas exhaust line 141 and the reaction gas exhaust line 142 of the separation exhaust unit 140.

  The separation exhaust unit 140 is formed on the inner surface of the gas supply unit 130. Thereby, the separation exhaust unit 140 separates and exhausts the remaining gas or the source gas and the reaction gas that have not yet reacted.

  Here, the source gas exhaust line 141 and the reaction gas exhaust line 142 divide the inside of the reaction chamber 110 into a source gas region SA, a reaction gas region RA, a first purge gas region PA1, and a second purge gas region PA2, and the source gas region SA and the reaction gas region RA can be separated from each other by the purge gas regions PA1 and PA2. Therefore, the purge gas regions PA1 and PA2 are preferably formed between the source gas exhaust line 141 and the reaction gas exhaust line 142.

  Thus, the purge gas regions PA1 and PA2 are formed between the source gas region SA and the reaction gas region RA. Thereby, it can reduce that the source gas and reaction gas which are exhausted mutually mix.

  The source gas exhaust line 141 and the reaction gas exhaust line 142 may be disposed in a form facing each other, or may be disposed in a form facing each other. Further, the source gas exhaust line 141 and the reaction gas exhaust line 142 may have a “V” shape. Thereby, the source gas region SA and the reaction gas region RA can be secured. Depending on the form, the source gas region SA and the reaction gas region RA can be secured to the maximum.

  That is, as shown in FIG. 2, the source gas exhaust line 141 and the reaction gas exhaust line 142 may have a “V” shape that is refracted with the central portion of the gas supply unit 130 as a reference. In this case, it can be considered that the inner surface of the gas supply unit 130 is divided into approximately four regions.

  However, the refracted portion (or vertex) of the source gas exhaust line 141 and the refracted portion of the reaction gas exhaust line 142 are separated from each other. For this reason, strictly speaking, the inner surface of the gas supply unit 130 is divided into three regions. Accordingly, the purge gas regions PA1 and PA2 divide the inside of the reaction chamber R into a source gas region SA and a reaction gas region RA.

  In FIG. 2, the source gas exhaust line 141 and the reaction gas exhaust line 142 are shown to have a “V” shape. However, the shape is not necessarily limited to such a shape. Various modifications such as shapes are possible. Modifications of the source gas exhaust line 141 and the reaction gas exhaust line 142 will be described later with reference to FIGS. 4 and 5.

  On the other hand, the source gas exhaust line 141 and the reaction gas exhaust line 142 can be formed by mounting separate pipe-shaped members on the inner surface of the gas supply unit 130, and also forming a pipe-shaped groove on the inner surface of the gas supply unit 130. It can also be prepared by doing.

  Here, the exhaust lines 141 and 142 are formed with a plurality of suction holes 141 a and 142 a for sucking gas along the longitudinal direction of the exhaust lines 141 and 142. In addition, a plurality of fastening holes 141b and 142b for mounting the exhaust lines 141 and 142 to the gas supply unit 130 can be formed in the outer portions of the suction holes 141a and 142a. In this case, the number of suction holes 141a and 142a and the position where the suction holes 141a and 142a are not formed can be appropriately selected in consideration of exhaust efficiency. The shapes of the suction holes 141a and 142a can be selected as appropriate, such as a slit shape instead of a hole.

  Since the source gas and the purge gas exist on both sides of the source gas exhaust line 141, the source gas and the purge gas are sucked into and exhausted from the source gas exhaust line 141. Further, since the reaction gas and the purge gas exist on both sides of the reaction gas exhaust line 142, the reaction gas and the purge gas are sucked into and exhausted from the reaction gas exhaust line 142. That is, as shown by the solid line arrows in FIG. 2, the gas existing on both sides of the exhaust lines 141 and 142 is simultaneously sucked and exhausted.

  Here, the purge gas existing in the purge gas regions PA 1 and PA 2 is exhausted not only through the source gas exhaust line 141 but also through the reaction gas exhaust line 142. That is, the source gas exhaust line 141 can exhaust the source gas and the purge gas, and the reaction gas exhaust line 142 can exhaust the reaction gas and the purge gas.

  Accordingly, a region (see the dot-and-dash line display portion) where the purge gas is relatively small or substantially does not exist is formed in a substantially central portion of the purge gas regions PA1 and PA2. Such an area is referred to as a separation area (SS: Separating Section). Then, the separation region SS is formed between the source gas exhaust line 141 and the reactive gas exhaust line 142, or is formed below the source gas exhaust line 141 and the reactive gas exhaust line 142.

  The separation region SS is not a mechanical or physical partition that can be visually recognized, but can prevent the source gas and the reaction gas exhausted by the separation region SS from mixing with each other. . That is, even if there is no mechanical or physical partition, the same effect can be obtained.

  By forming the separation region SS in this way, it is possible to prevent the remaining source gas and the reaction gas from mixing even if there is no mechanical or physical partition. Therefore, the internal structure of the reaction chamber R of the reaction chamber 110 can be simply configured.

  On the other hand, the source gas exhaust line 141 and the reactive gas exhaust line 142 are connected to discharge lines 161 and 162 formed outside the gas supply unit 130. The discharge lines 161 and 162 may include a first discharge line 161 connected to the source gas exhaust line 141 and a second discharge line 162 connected to the reaction gas exhaust line 142.

  Here, it is preferable that one ends of the first discharge line 161 and the second discharge line 162 pass through the gas supply unit 130 and be connected to the source gas exhaust line 141 and the reactive gas exhaust line 142, respectively. The other end is preferably connected to the vacuum pump unit 150 via the reaction chamber 110 so as to be located on one side of the reaction chamber R. Thereby, the remaining source gas, reaction gas, and the like can be discharged toward the upper portion of the reaction chamber R. As a result, the exhaust structure inside the reaction chamber R can be simplified.

  More specifically, the first connection hole 133 and the second connection hole 134 are formed through substantially the center of the gas supply unit 130. In addition, a third connection hole 135 and a fourth connection hole 136 are formed through one edge of the gas supply unit 130. The source gas exhaust line 141 is connected to the first connection hole 133 and the third connection hole 135 via the outside of the gas supply unit 130. The reactive gas exhaust line 142 is connected to the second connection hole 134 and the fourth connection hole 136.

  On the other hand, a first discharge port 113a and a second discharge port 113b communicating with the third connection hole 135 and the fourth connection hole 136, respectively, are formed at one side edge of the reaction chamber 110. Thereby, the discharge lines 161 and 162 are exposed to the outside at the upper part of the gas supply unit 130. In some cases, the first discharge port 113 a and the second discharge port 113 b are not exposed to the outside on the side surface of the reaction chamber 110. In such a case, the discharge lines 161 and 162 can be connected to the vacuum pump unit 150 through the reaction chamber 110. As a result, the entire exhaust line including the discharge lines 161 and 162 can be firmly attached.

  When the portions of the discharge lines 161 and 162 exposed to the outside of the reaction chamber 110 increase, the possibility of damage to the discharge lines due to collision with external equipment increases. Therefore, it is preferable to incorporate a discharge line in the reaction chamber 110 as much as possible.

  Thus, by forming the exhaust member that occupies a large volume or space structurally outside the reaction chamber R, the productivity of the gas supply unit 130 can be improved. In addition, the size of the reaction chamber 110 can be reduced.

  A plurality of exhaust holes 111 can be formed at the bottom edge of the reaction chamber R. The exhaust hole 111 may include a first exhaust hole 111a formed in a portion corresponding to the source gas region SA, and a second exhaust hole 111b formed in a portion corresponding to the reaction gas region RA. Here, it is effective that the first and second exhaust holes 111 a and 111 b are positioned below the susceptor 120.

  As shown in FIG. 3, the first exhaust hole 111 a is formed so as to be positioned between both ends of the source gas exhaust line 141, and the second exhaust hole is positioned so as to be positioned between both ends of the reactive gas exhaust line 142. 111b can be formed, and the first exhaust hole 111a and the second exhaust hole 111b can be spatially separated. By doing so, even when the source gas and the reactive gas are exhausted through the exhaust hole 111, it is possible to reduce the mixing of the both.

  Here, in order to explain the partition region inside the reaction chamber R formed by the source gas exhaust line 141 and the reaction gas exhaust line 142, a portion corresponding to the source gas exhaust line 141 and the reaction gas exhaust line 142 in FIG. Is indicated by a dotted line.

  On the other hand, partition walls 112a and 112b can be formed on the inner walls of the reaction chamber 110 or reaction chamber R. By forming the partition walls 112a and 112b, mixing of the source gas and the reaction gas is prevented. At this time, it is preferable that the partition walls 112a and 112b are located between the source gas exhaust line 141 and the reactive gas exhaust line 142, and are formed at least at two locations so as to face each other.

  Referring to FIG. 3, the partition walls 112a and 112b are formed on a line that substantially passes through the center of the gas supply unit 130, and are formed at portions corresponding to the purge gas regions PA1 and PA2. A source gas exhaust line 141, a source gas region SA, and a first exhaust hole 111a are located on one side of a virtual line connecting the partition walls 112a and 112b, and a reactive gas exhaust line 142 and a reactive gas region RA are located on the other side. , And the second exhaust hole 111b. Thus, by forming the mechanical partition walls 112a and 112b in the reaction chamber R, mixing of the source gas and the reaction gas exhausted through the exhaust holes 111a and 111b can be prevented double.

  The exhaust holes 111a and 111b may be formed symmetrically with respect to the separation region SS or the physical partition walls 112a and 112b.

  Referring to FIG. 1, the partition walls 112 a and 112 b are formed to have almost the same height as the reaction chamber R. It is sufficient that the partition walls 112a and 112b have a height close to the position where the source gas exhaust line 141 and the reaction gas exhaust line 142 are formed.

  On the other hand, the dotted arrow in FIG. 1 indicates the flow direction of the exhausted gas. According to this, it is understood that the exhausted gas is exhausted through the upper part of the reaction chamber R.

  Thus, by exhausting the source gas and reaction gas remaining after the reaction through the upper part of the reaction chamber 110 or the reaction chamber R, the source gas and the reaction gas are mixed with each other, and impurities such as particles are generated. However, it is possible to reduce the deterioration of the film formation quality due to the damage of the surface of the substrate W due to such impurities.

  Further, by separating and exhausting the remaining source gas and the reactive gas toward the upper part of the reaction chamber, it is possible to reduce the remaining particles and the like between the fine structures on the substrate W at the time of exhausting. It is possible to reduce the deterioration of film formation quality due to collision with the surface of the substrate W in the process of being evacuated. That is, when the source gas exhaust line 141 and the reaction gas exhaust line 142 pass over the substrate W, particles or the like existing between the upper fine spaces or structures of the substrate W are passed through the exhaust lines 141 and 142 and outside the reaction chamber R. Removed. Thereby, it can prevent that the vapor deposition quality of the board | substrate W falls.

  As shown in FIG. 3, the vacuum pump unit 150 is connected to the first vacuum pump 151 connected to the first exhaust hole 111a and the first discharge line 161, to the second exhaust hole 111b, and to the second discharge line 162. The second vacuum pump 152 can be configured. As a result, the exhaust structure of the source gas and the reaction gas can be completely configured not only inside the reaction chamber 110 but also outside. Thereby, mixing of source gas and a reactive gas can be prevented until the last.

  Here, a first vacuum line 171 connecting the first exhaust hole 111a and the first vacuum pump 151 and a second vacuum line 172 connecting the second exhaust hole 111b and the second vacuum pump 152 may be further provided.

  Hereinafter, modified examples of the gas supply unit 130 by the thin film deposition apparatus 100 according to an embodiment of the present invention will be described.

  FIG. 4 is a view showing a modification of the gas supply unit according to FIG. FIG. 5 is a view showing another modification of the gas supply unit according to FIG.

  FIG. 4 is a diagram illustrating an inner surface of the gas supply unit 130 ′ facing the susceptor 120 (see FIG. 1). As shown in FIG. 4, a substantially circular source gas exhaust line 141 ′ and reaction gas exhaust line 142 ′ are formed in the gas supply unit 130 ′ so as to be positioned above the susceptor 120.

  Here, a plurality of source gas exhaust lines 141 ′ and reaction gas exhaust lines 142 ′ may be formed. Exhaust slits 141c and 142c for exhausting gas are formed in the source gas exhaust line 141 'and the reactive gas exhaust line 142', respectively. An exhaust groove (not shown) may be formed instead of the exhaust slits 141c and 142c.

  On the other hand, a source gas region SA is formed in a portion surrounded by the source gas exhaust line 141 ', and a reaction gas region RA is formed in a portion surrounded by the reaction gas exhaust line 142'. At this time, a first purge gas region PA1 and a second purge gas region PA2 are formed outside the source gas exhaust line 141 'and the reactive gas exhaust line 142'.

  The first discharge line 161 'is connected to the source gas exhaust line 141', and the second discharge line 162 'is connected to the reaction gas exhaust line 142'.

  Thus, by separating the source gas region SA and the reactive gas region RA using the purge gas regions PA1 and PA2, the source gas and the exhaust gas are mixed in the process of separating and exhausting the source gas and the exhaust gas. Can be prevented.

  On the other hand, referring to FIG. 5 showing another modification, a substantially radial source gas exhaust line 141 ″ and a reaction gas exhaust line 142 ″ are formed in the gas supply unit 130 ″ so as to be positioned above the susceptor 120. Preferably, at least two source gas exhaust lines 141 ″ and reactive gas exhaust lines 142 ″ are formed.

  Here, a connection line 145 connected to one end of the source gas exhaust line 141 ″ and the reaction gas exhaust line 142 ″ is formed at the central portion of the gas supply unit 130 ″. The source gas exhaust line 141 ″. The reaction gas exhaust line 142 "is formed with exhaust grooves 141d and 142d for exhausting gas. An exhaust slit (not shown) may be formed instead of the exhaust grooves 141d and 142d. .

  On the other hand, a source gas region SA is formed between the source gas exhaust lines 141 ", and a reaction gas region RA is formed between the reaction gas exhaust lines 142". At this time, a first purge gas region PA1 and a second purge gas region PA2 are formed between the source gas exhaust line 141 ″ and the reaction gas exhaust line 142 ″, respectively.

  Further, the first discharge line 161 ″ and the second discharge line 162 ″ are connected to the connection line 145. Here, it is preferable to form a separation plate 145 a in the connection line 145 for preventing the source gas and the reaction gas from mixing in the connection line 145.

  With this configuration, the source gas region SA and the reactive gas region RA can be separated using the purge gas regions PA1 and PA2, and the source gas and the exhaust gas are prevented from being mixed in the exhaust process. Can do.

  On the other hand, referring to FIG. 6, the cross-sectional shapes of the source gas exhaust line 141 and the reaction gas exhaust line 142 can be seen. The exhaust lines 141 and 142 can be formed in a groove shape recessed in the inner surface of the gas supply unit 130. If formed in this way, there may be an advantage that the range for sucking the exhausted gas can be increased.

  Since the gas is exhausted as indicated by the solid line arrow in FIG. 6, if the purge gas existing on both sides of the substantially partition wall 112a is exhausted, a separation region SS is formed in the vicinity of the partition wall 112a.

  In FIG. 6, it is shown that the exhaust lines 141 and 142 are recessed and formed on the lower surface of the gas supply unit 130. However, in this invention, it is not necessarily limited to such a shape, It can also have a flat form. Of course, even when the recess is formed, it can be recessed in a polygonal form as well as a curved surface.

  Hereinafter, the vapor deposition method and gas exhaust method of the thin film vapor deposition apparatus 100 according to an embodiment of the present invention will be described with reference to FIG. FIG. 7 is a diagram illustrating operation states of the thin film deposition apparatus according to FIG. 1 according to steps.

  FIG. 7 is a diagram for stepwise showing the relative position change of the substrate W, the source gas exhaust line 141 and the reactive gas exhaust line 142 as the susceptor 120 rotates.

  First, after the substrate W is placed on the susceptor 120, the susceptor 120 and the substrate W are rotated by a drive unit (not shown) connected to the rotation shaft 121 (see FIG. 1). At this time, the source gas, the reaction gas, and the purge gas are simultaneously supplied via the gas supply unit 130. Here, the substrate W comes in contact with the source gas → the purge gas → the reaction gas → the purge gas while rotating to complete one cycle.

  For the sake of understanding, the description will be made with reference to the leftmost substrate shown in FIG. 7A, the substrate W placed on the susceptor 120 first contacts the source gas while rotating in the reaction chamber, and the source gas is chemically deposited on the surface of the substrate W.

  Thereafter, as shown in FIG. 7B, the substrate W passes through the purge gas, and the remaining source gas is exhausted through the source gas exhaust line 141. At this time, impurities or particles existing on the substrate W are discharged together with the source gas to the upper side of the gas supply unit 130 via the source gas exhaust line 141. Can reduce the damage.

  Thereafter, chemical vapor deposition is performed on the surface of the substrate W while passing through the reaction gas. Thus, a desired thin film can be formed (see the substrate shown second from the left in FIG. 7A).

  Finally, the remaining reaction gas can be removed while passing through the purge gas (see the substrate shown second from the left in FIG. 7B). Also at this time, impurities or particles existing on the substrate W can be discharged together with the reaction gas to the upper side of the gas supply unit 130 via the reaction gas exhaust line 142.

  Through such a process, the film formation of the substrate is completed, and the gas remaining in the reaction chamber is exhausted while the susceptor 120 rotates. At this time, the remaining source gas and purge gas are exhausted through the source gas exhaust line 141, and the reaction gas and purge gas are exhausted through the reaction gas exhaust line 142.

  Further, the gas remaining on the edge side of the reaction chamber R is exhausted through the exhaust holes 111a and 111b, but the gases exhausted through the exhaust holes 111a and 111b are separated from each other by the partition walls 112a and 112b. It will be exhausted at.

  Finally, the source gas and the reaction gas separated and exhausted through the exhaust lines 141 and 142 and the exhaust holes 111a and 111b can be completely exhausted from the first vacuum pump 151 and the second vacuum pump 152. Eventually, the remaining source gas and reaction gas are completely separated and exhausted independently.

  Meanwhile, in the thin film deposition method according to an embodiment of the present invention, a source gas region SA that supplies a source gas to the upper portion of the reaction chamber 110, a first purge gas region PA1 that supplies a purge gas, and a reaction gas region RA that supplies a reaction gas. And a second purge gas region PA2 for supplying a purge gas, a step of rotating a susceptor 120 on which at least one substrate W is placed in the reaction chamber 110, a source gas region SA, a reaction gas region A step of supplying source gas, reaction gas, and purge gas onto susceptor 120 via RA and first and second purge gas regions PA1, PA2, and a boundary between source gas region SA and first and second purge gas regions PA1, PA2; Corresponding to the source gas exhaust line 141 formed on the bottom surface of the gas supply unit 130. And exhausting the ambient gas from the reaction chamber 110 using the reaction gas exhaust line 142 formed on the bottom surface of the gas supply unit 130 corresponding to the boundary between the reaction gas region RA and the first and second purge gas regions PA1 and PA2. Can be included.

  As described above, according to an embodiment of the present invention, it is possible to prevent an unnecessary reaction by mixing the remaining source gas and the reactive gas with the separation exhaust unit. . Thereby, it is possible to prevent the reactant from being deposited on other places except the substrate.

  Further, according to an embodiment of the present invention, it is not necessary to form a mechanical partition in the reaction chamber for separating and exhausting the source gas and the reaction gas, and the internal structure of the reaction chamber can be simplified. .

  In addition to this, according to an embodiment of the present invention, mixing of the remaining source gas and the reaction gas can be prevented, and the generation of impurities such as particles can be reduced. Thereby, the quality of the thin film can be improved.

  According to one embodiment of the present invention, by separating and exhausting the source gas and the reactive gas toward the upper part of the reaction chamber, it is possible to reduce the remaining particles and the like between the fine structures on the substrate during the exhaust. it can. Thereby, it is possible to reduce the deterioration of film formation quality due to collision with the surface of the substrate in the process of exhausting particles and the like.

  In addition, according to an embodiment of the present invention, not only the exhaust line but also the exhaust hole formation position can be separated into the source gas region and the reactive gas region. Thereby, mixing of source gas and a reactive gas can be interrupted | blocked by double.

  In addition to this, according to one embodiment, it is possible to reduce damage to the vacuum pump due to impurities such as particles. Thereby, the service life of the vacuum pump can be extended.

  Although the thin film deposition apparatus described above has been described in terms of an atomic layer deposition apparatus, it is needless to say that the thin film deposition apparatus can be applied not only to this but also to a chemical vapor deposition apparatus. The above description should be understood as a technical idea of the present invention or a minimum technique for the present invention that can be grasped from various viewpoints, and should not be understood as a boundary limiting the present invention.

  As described above, the preferred embodiments of the present invention have been described with reference to the preferred embodiments of the present invention. However, those skilled in the relevant art will not depart from the spirit and scope of the present invention described in the claims. Thus, it will be understood that the present invention can be variously modified and changed. In other words, the technical scope of the present invention is defined based on the claims, and is not limited by the best mode for carrying out the invention.

1 is a longitudinal sectional view schematically showing a thin film deposition apparatus according to an embodiment of the present invention. It is sectional drawing by the cutting line II-II of FIG. 1, and is a figure which shows the gas supply part in which the separation exhaust part which concerns on one Embodiment of this invention was formed. It is sectional drawing by the cutting line III-III of FIG. 1, and is a figure which shows the relationship between the reaction chamber inside of the thin film deposition apparatus which concerns on one Embodiment of this invention, and a separation exhaust part. It is a figure which shows the modification of the gas supply part which concerns on FIG. It is a figure which shows the other modification of the gas supply part which concerns on FIG. FIG. 4 is a cross-sectional view taken along a cutting line IV-IV in FIG. 1 and is a diagram illustrating an operation principle of a thin film deposition apparatus including a separation exhaust unit according to an embodiment of the present invention. It is a figure which shows the operation state according to step of the thin film vapor deposition apparatus which concerns on FIG.

Explanation of symbols

100: thin film deposition apparatus 110: reaction chamber 111: exhaust hole 112: partition wall 113: discharge port 120: susceptor 130, 130 ′, 130 ″: gas supply unit 140: separation exhaust unit 141, 141 ′, 141 ″: source gas exhaust Line 142, 142 ', 142 ": Reaction gas exhaust line 150: Vacuum pump section 161, 162: Discharge line 171, 172: Vacuum line R: Reaction chamber SA: Source gas region RA: Reaction gas region PA1: First purge gas region PA2: second purge gas region SS: separation region W: substrate

Claims (14)

A reaction chamber;
A susceptor rotatably mounted in the reaction chamber and on which at least one substrate is placed;
A gas supply unit mounted on an upper part of the reaction chamber and independently supplying a plurality of gases into the reaction chamber;
A separation exhaust part that is mounted on the susceptor upper part so as to correspond to the boundary of each region to which the plurality of gases are supplied, and has an exhaust line that exhausts the surrounding gas;
A vacuum pump unit providing suction input to the separation exhaust unit;
A thin film deposition apparatus comprising: The exhaust line divides the interior of the reaction chamber into a source gas region, a reaction gas region, and a purge gas region,
The thin film deposition apparatus of claim 1, wherein the source gas region and the reaction gas region are separated from each other by the purge gas region.   The thin film deposition apparatus according to claim 2, wherein the exhaust line sucks and discharges impurities or particles present on the substrate placed on the susceptor. A discharge line connecting the exhaust line of the separation exhaust unit and the vacuum pump unit;
2. The thin film deposition apparatus according to claim 1, wherein one end of the discharge line passes through an upper portion of the gas supply unit and is connected to the exhaust line, and the other end is connected to the vacuum pump unit.   The thin film deposition apparatus of claim 1, further comprising an exhaust hole formed at an edge of the reaction chamber and connected to the vacuum pump unit.   The thin film deposition apparatus according to claim 5, wherein a partition wall is formed inside the reaction chamber to prevent mixing of gas exhausted around the susceptor. The gas supply unit sequentially includes a source gas region for supplying a source gas, a first purge gas region for supplying a purge gas, a reaction gas region for supplying a reaction gas, and a second purge gas region for supplying a purge gas,
The separation exhaust unit includes a source gas exhaust line formed on a bottom surface of the gas supply unit corresponding to a boundary between the source gas region and the first and second purge gas regions, and the reaction gas region and the first and second The thin film deposition apparatus according to claim 1, further comprising a reaction gas exhaust line formed on a bottom surface of the gas supply unit corresponding to a boundary with a purge gas region.   The gas supply unit corresponding to the source gas region, the reaction gas region, and the first and second purge gas regions is formed with a plurality of gas injection holes for injecting gas into the reaction chamber. The thin film deposition apparatus according to claim 7. The source gas exhaust line is formed through a boundary between the source gas region and the first purge gas region and a boundary between the source gas region and the second purge gas region;
The reactive gas exhaust line is formed through a boundary between the reactive gas region and the first purge gas region and a boundary between the reactive gas region and the second purge gas region. Item 9. The thin film deposition apparatus according to Item 8. A first discharge line formed at the gas supply unit and connected at one end with the source gas exhaust line; and a second discharge line connected at one end with the reactive gas exhaust line;
The said vacuum pump part is provided with the 1st vacuum pump connected with the other end of the said 1st discharge line, and the 2nd vacuum pump connected with the other end of the said 2nd discharge line. Thin film deposition equipment. A first exhaust hole formed at an edge of the reaction chamber so as to correspond to the source gas region and connected to the first vacuum pump;
A second exhaust hole formed at an edge of the reaction chamber to correspond to the reaction gas region and connected to the second vacuum pump;
The thin film deposition apparatus according to claim 10, comprising:   11. The partition according to claim 10, wherein a partition wall that prevents mixing of the source gas and the reaction gas is formed in the reaction chamber, and the partition wall is located in the first purge gas region and the second purge gas region. Thin film deposition equipment.   8. The thin film deposition apparatus of claim 7, wherein the source gas exhaust line exhausts source gas and purge gas, and the reaction gas exhaust line exhausts reaction gas and purge gas. A source gas region for supplying a source gas, a first purge gas region for supplying a purge gas, a reaction gas region for supplying a reaction gas, and a second purge gas region for supplying a purge gas are sequentially formed in the upper part of the reaction chamber.
Rotating a susceptor on which at least one substrate is placed in the reaction chamber;
Supplying the source gas, the reaction gas, and the purge gas onto the susceptor through the source gas region, the reaction gas region, and the first and second purge gas regions;
A source gas exhaust line formed on a bottom surface of the gas supply unit corresponding to a boundary between the source gas region and the first and second purge gas regions, and a boundary between the reaction gas region and the first and second purge gas regions A thin film deposition method for exhausting ambient gas from the reaction chamber using a reaction gas exhaust line formed on the bottom surface of the gas supply unit.