JP2009147030A - Semiconductor device - Google Patents

Abstract

An object of the present invention is to suppress bubbles included in a sealing resin.
An insulating substrate provided with a wiring portion for external connection, and a semiconductor element bonded to the insulating substrate with an adhesive material and electrically connected to the wiring portion with a thin metal wire. A semiconductor device 13 having a protective body 9 bonded to the semiconductor element 6 with an adhesive material 8, a frame 2 provided at the peripheral edge of the insulating base 1, and a sealing resin 10 covering the metal thin wire 7. The resin injection path 12 passes through the frame 2, and the resin injection path 12 has a resin injection port 11 on the outer wall surface of the frame body 2, and has a resin inlet 13 on the inner wall surface of the frame body 2. The resin inlet 13 is in contact with the joint surface between the inner wall surface of the frame 2 and the insulating substrate 1.
[Selection] Figure 1

Description

  The present invention relates to an optical device such as a solid-state imaging device using an imaging element such as a CCD or CMOS, and more particularly to a semiconductor device configured by mounting a semiconductor element on an insulating substrate.

  In recent years, along with miniaturization of electronic devices such as portable terminals, miniaturization of semiconductor devices is required. In addition, semiconductor devices are required not only to be reduced in size and thickness, but also to remove bubbles in the sealing resin in order to improve the reliability of their performance. Among semiconductor devices, in particular, there is a strong market demand for optical devices such as solid-state imaging devices widely used in video cameras, still cameras, and the like.

A configuration of a conventional solid-state imaging device is shown in FIG. FIG. 6A is a plan view of the solid-state imaging device, and FIG. 6B is a cross-sectional view taken along the line CC ′ in FIG.
In FIG. 6, the solid-state imaging device 60 includes an insulating base 1, a frame 2 provided on the peripheral edge of the insulating base 1, and an element mounting portion 3 provided on the surface of the inner insulating base surrounded by the frame 2. A plurality of wiring parts 4 led out from the periphery of the element mounting part 3 to the lower surface of the insulating base 1, a solid-state imaging element 6 fixed to the element mounting part 3 with an adhesive 5, a solid-state imaging element 6 and a wiring part 4, a thin metal wire 7 that is electrically connected to 4, a translucent protective body 9 bonded to the solid-state imaging element 6 by an adhesive 8, and the frame 2 and the solid-state imaging so as to cover the thin metal wire 7. In this structure, the sealing resin 10 is filled between the elements 6. FIG. 6A shows the resin 10 shown in FIG. 6B as seen through.

In such a solid-state imaging device, in order to fill the sealing resin 10 without enclosing air bubbles, the defoaming process is performed by filling the sealing resin 10 and then placing it in a decompression chamber.
Patent Document 1 proposes a method of forming a pair of through holes on the back surface of a substrate and filling a sealing resin from one of the through holes.
JP-A-8-236738

However, the method using the decompression chamber as described above is not general because there is a possibility that the manufacturing cost may increase due to the tact time required for decompression.
Further, in the filling method proposed in Patent Document 1, since the resin is filled from above and the air is extracted upward, the flow of the resin does not coincide with the air discharge direction. For this reason, bubbles remain in the corners of the frame after filling with the resin.

  The present invention has been made in view of the above problems, and an object thereof is to provide a semiconductor device capable of suppressing bubbles encapsulated in a sealing resin.

  In order to solve the above-described problems, a semiconductor device according to the present invention includes an insulating base provided with a wiring portion for external connection, an adhesive material bonded to the insulating base, and an electrical connection with the wiring portion through a thin metal wire. A semiconductor device comprising: a semiconductor element; a protector bonded to the semiconductor element with an adhesive material; a frame provided on a peripheral edge of the insulating base; and a sealing resin that covers the metal thin wire. The resin injection path has a resin injection port on the outer wall surface of the frame body, and has a resin inlet on the inner wall surface of the frame body, and the resin inlet port is the frame. It is in contact with the joint surface between the inner wall surface of the body and the insulating substrate.

  In the semiconductor device of the present invention, since the resin inflow port is in contact with the insulating base, the resin level is gradually filled upward from the surface of the insulating base, and the resin is filled in the region surrounded by the frame. Since the flow direction of the resin is directed upward from the surface of the insulating base, the discharge of air is not hindered. Therefore, since air bubbles in the sealing resin are suppressed, product reliability can be improved. In addition, the product quality can be stabilized and the production yield can be improved. Furthermore, capital investment such as a decompression chamber is unnecessary, and the number of processes can be reduced, so that the manufacturing cost can be reduced as compared with the prior art.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. Here, a solid-state imaging device will be described as an example of a semiconductor device.
(Embodiment 1)
1A is a plan view of the solid-state imaging device according to the first embodiment of the present invention, FIG. 1B is a cross-sectional view taken along the line AA ′ in FIG. 1A, and FIG. 1C is FIG. It is XX 'sectional drawing in.

  This solid-state imaging device 14 includes an insulating base 1 formed of ceramic, resin, or the like, a frame 2 provided on the peripheral edge of the insulating base 1, and an element mounting portion provided on the surface of the inner insulating base surrounded by the frame 2 3, a wiring part 4 formed of a plurality of metallized wiring bodies led out from the periphery of the element mounting part 3 to the lower surface of the insulating substrate 1, a CCD fixed to the element mounting part 2 with an adhesive 5 such as silver paste, etc. The solid-state imaging device 6, the metal wire 7 such as an Au wire that electrically connects the electrode pad of the solid-state imaging device 6 and the wiring portion 4, and an epoxy resin or the like as a main material on the solid-state imaging device 6. A transparent protective body 9 joined by an adhesive 8 such as a UV adhesive, and an epoxy resin filled between the frame 2 and the solid-state imaging device 6 so as to cover the metal thin wire 7. This is a structure having a stop resin 10. FIG. 1A shows the resin 10 in FIGS. 1B and 1C seen through.

  This solid-state imaging device is different from the conventional one described with reference to FIG. 6 in that a resin injection path 12 that penetrates the frame 2 is provided. The resin injection path 12 has a resin injection port 11 on the outer wall surface of the frame body 2, and a resin inlet 13 on the inner wall surface of the frame body 2. It is in contact with the joint surface.

According to this, the resin 10 injected from the resin injection port 11 on the outer wall surface of the frame body 2 flows through the resin injection path 12 and above the insulating substrate 1 surrounded by the frame body 2 from the resin inlet port 13. . Therefore, the sealing resin 10 can be filled between the frame 2 and the solid-state imaging element 6 without enclosing bubbles, and the reliability of the product can be improved.
(Embodiment 2)
2A is a plan view of the solid-state imaging device according to the second embodiment of the present invention, FIG. 2B is a cross-sectional view taken along line BB ′ in FIG. 2A, and FIG. 2C is FIG. It is YY 'sectional drawing in.

  The difference between the solid-state imaging device 20 and that of the first embodiment is that the resin injection port 11 is formed on the upper surface of the frame body 2. With this configuration, no dripping occurs from the resin injection port 11 after resin injection, so that it is not necessary to block the resin injection port 11 with a heat-resistant tape or the like as a liquid dripping prevention before resin curing, and the manufacturing process is simple.

  An arrangement example of the resin injection port 11 is shown in FIGS. In the solid-state imaging device 30 shown in FIG. 3A, a resin injection port 11 extending linearly is formed on the upper surface of the outer wall of the frame body 2, and a multi-nozzle or a flat type nozzle in which a plurality of needles are arranged in parallel is provided. The resin filling speed can be improved by inserting the resin into the resin injection port 11 and injecting the resin.

  In the solid-state imaging device 31 shown in FIG. 3B, a plurality of resin injection ports 11 are formed on the upper surface of the outer wall of the frame body 2, and the resin filling speed can be improved. In this case, there is no need for a special multi-nozzle or flat type nozzle, and a general one-hole nozzle is used, so there is a cost merit.

Since the solid-state image sensor 6 has a generally rectangular shape, the resin inlet 13 is preferably formed at the center of the side of the frame 2. In this case, the flow amount of the resin 10 is not biased around the solid-state imaging element 6 and is evenly branched and spreads, so that the resin filling quality is improved.
(Embodiment 3)
FIG. 4 is a plan view of a solid-state imaging device according to Embodiment 3 of the present invention. However, in FIG. 4, the solid-state imaging element 6 is shown in a transparent state.

The difference between the solid-state imaging device 40 and that of the first embodiment is that a groove 41 is formed on the surface of the insulating substrate 1 to be the element mounting portion 3.
In the above description, since the resin 10 flowing in from the resin inlet 13 flows and fills around the solid-state imaging device 6, if the amount of resin inflow is increased, There is a difference in the rising speed of the resin liquid level between the vicinity and the opposite side through the solid-state imaging device 6, the resin liquid level rises in the vicinity of the resin inlet 13, and the resin inlet 13 near the resin inlet 13. The resin 10 protrudes from the upper surface of the frame 2.

  However, in the case shown in FIG. 4, since the grooves 41 are formed in a lattice pattern on the surface of the insulating base 1 that becomes the element mounting portion 2, even when the resin inflow amount is increased, The resin 10 flows not only around but also through the groove 41 formed under the solid-state image sensor 6, and the resin liquid level is evenly distributed in the vicinity of the resin inlet 13 and on the opposite side through the solid-state image sensor 6. To rise.

  For this reason, the resin from the upper surface of the frame body 2 can be prevented from protruding, and the quality stability is improved as the resin filling speed is improved. In this case, as the adhesive for fixing the solid-state imaging element 6 to the element mounting portion 3, if a tape-like adhesive such as ACF is used, the solid-state imaging element 6 is not blocked by the element mounting portion 3. A sufficient effect can be obtained without hindering resin flow.

The insulating base 1 and the frame 2 may be formed of a multilayer ceramic substrate in which a plurality of ceramic green sheets are laminated, as shown in FIGS.
In the case of FIG. 5 (a), the second layer sheet 52 from which the resin injection path 12 is cut is sandwiched between the first layer sheet 51 and the third layer sheet 53 and fired. Thus, a package having the resin injection path 12 can be easily manufactured.

  In the case of FIG. 5B, a rod-like combustible material 54 such as wood is sandwiched between the first layer sheet 51 and the second layer sheet 52 and fired. Since the combustible material 54 disappears by firing, a cavity serving as a resin injection path can be easily formed in a portion corresponding to the combustible material 54.

  In the case of FIG.5 (c), the groove | channel 41 is formed in the sheet | seat 51 of the 1st layer, for example by pressing with a metal jig | tool etc., and the sheet | seat 52 of the 2nd layer is laminated | stacked on it. By baking, a package having the resin injection path 12 and the groove 41 of the element mounting portion can be easily manufactured.

  Even in the case of adopting the above-described embodiment, since a facility such as a decompression chamber for defoaming is not necessary, a cost merit is greatly advantageous.

  The present invention can be applied to an optical device other than a solid-state imaging device, and also to a semiconductor device that is not an optical device, and is easy to process. Since the product reliability can be improved and the manufacturing cost can be reduced, the electronic equipment on which such a semiconductor device is mounted, such as a video camera or a still camera, can also improve the reliability compared to the conventional products, and It can be manufactured at low cost.

1 shows a solid-state imaging device as Embodiment 1 of the present invention, in which (a) is a plan view, (b) is a sectional view taken along line A-A 'in (a), and (c) is a sectional view taken along line X-X' in (a). 2 shows a solid-state imaging device as Embodiment 2 of the present invention, where (a) is a plan view, (b) is a B-B ′ sectional view of (a), and (c) is a Y-Y ′ sectional view of (a). FIG. Example of arrangement of resin injection port according to Embodiment 2 of the present invention The top view which shows the solid-state imaging device as Embodiment 3 of this invention The schematic diagram which shows the preparation example which laminated | stacked the ceramic green sheet as embodiment of this invention 1 shows a conventional solid-state imaging device, where (a) is a plan view and (b) is a cross-sectional view taken along line C-C ′ of (a).

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Insulation base | substrate 2 Frame 3 Element mounting part 4 Wiring part 5 Adhesive 6 Solid-state image sensor 7 Metal thin wire 8 Adhesive 9 Protector 10 Sealing resin 11 Resin injection port 12 Resin injection path 13 Resin inflow path 14, 20, 30 , 40, 60 Solid-state imaging device 41 Groove 51 First layer sheet 52 Second layer sheet 53 Third layer sheet 54 Combustible substance

Claims (5)

An insulating base provided with a wiring part for external connection, a semiconductor element bonded to the insulating base with an adhesive material, and electrically connected to the wiring part with a fine metal wire, and a protector bonded to the semiconductor element with an adhesive material And a semiconductor device having a frame body provided on a peripheral edge of the insulating base and a sealing resin covering the metal thin wire,
A resin injection path penetrating the frame body, the resin injection path having a resin injection port on the outer wall surface of the frame body, and a resin inlet port on the inner wall surface of the frame body; Is in contact with the joint surface between the inner wall surface of the frame and the insulating base.   The semiconductor device according to claim 1, wherein a resin injection port is formed on an upper surface of the outer wall of the frame body.   The semiconductor device according to claim 1, wherein a groove is formed on a surface of the insulating base that is an inner side surrounded by the frame body.   4. The semiconductor device according to claim 1, wherein the insulating base is a multilayer ceramic substrate formed by laminating a plurality of ceramic green sheets. 5.   5. The semiconductor device according to claim 1, wherein the semiconductor element is an optical element that receives or emits light, and the protective body is a translucent member.

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