JP2009145063A - Method and device for adjusting characteristics of semiconductor pressure sensor - Google Patents

Abstract

Characteristics adjustment of a semiconductor pressure sensor capable of performing characteristic adjustment more appropriately by reducing the influence of stress physically applied to a gauge sensor when adjusting characteristics of a semiconductor pressure sensor for measuring relative pressure or absolute pressure To provide a method and a device for adjusting characteristics.
A fixing jig 26a having a concave portion for accommodating a resin case portion of a lead terminal integrated resin assembly cell 10 for inputting / outputting an electric signal to / from the lead terminal 7 in a state where the resin case portion is accommodated. The movable treatment is provided with a seal member 23 for bringing the probe 25a into contact with each other and hermetically sealing between one main surface of the sensor chip and the other main surface and a pressure control hole for applying an arbitrary pressure. The characteristic adjustment method of the semiconductor pressure sensor is performed, in which the tool 22 is joined and hermetically sealed, and the required pressure is introduced through the pressure control hole to form the required pressure reference chamber and the characteristics are adjusted. Figure 1

Description

  The present invention relates to an improvement of a characteristic adjustment method of a semiconductor pressure sensor and an improvement of a characteristic adjustment apparatus. Furthermore, even when the pressure measurement method of the semiconductor pressure sensor is different, the characteristics of the semiconductor pressure sensor can be shared by using the same apparatus. The present invention relates to an adjustment method and a characteristic adjustment device.

A configuration of a conventional semiconductor pressure sensor will be described. FIG. 8 is a cross-sectional view of a characteristic adjusting jig used for adjusting characteristics of a conventional semiconductor pressure sensor for measuring relative pressure. FIG. 9 is a cross-sectional view of a conventional semiconductor pressure sensor for measuring relative pressure, and FIG. 10 is a cross-sectional view of a lead terminal integrated resin assembly cell 100 incorporated in the semiconductor pressure sensor for measuring relative pressure. FIG. 11 is a plan view of the lead terminal integrated resin assembly cell 100.
The semiconductor pressure sensor chip 1 is produced based on a silicon semiconductor substrate. The semiconductor pressure sensor chip 1 is formed in a concave circular shape (dotted line in FIG. 11) by etching or the like on the back surface of the central portion of the substrate, and the bottom of the concave portion (the uppermost portion of the semiconductor pressure sensor chip 1 in FIG. 10) is thin. The diaphragm 2 is provided. A pressure detection circuit (not shown) is integrally formed on the surface portion of the diaphragm 2 of the semiconductor pressure sensor chip 1 using a general semiconductor process. Specifically, this pressure detection circuit is a strain gauge formed by wiring four piezoresistive elements (not shown) using diffusion resistance formed on the diaphragm 2 to a Wheatstone bridge circuit using an aluminum thin film conductor. Consists of. This strain gauge has a function of detecting stress strain generated in the diaphragm 2 by external pressure (or relative pressure) and converting it into an electrical signal.

Further, on the surface of the peripheral portion surrounding the diaphragm 2 of the semiconductor pressure sensor chip 1, a characteristic compensation circuit, a signal amplification circuit, a protection circuit, and the like (not shown) are integrally formed by a semiconductor process. The characteristic compensation circuit is a digital / analog hybrid circuit that adjusts the relationship between pressure and output to a predetermined transfer function. The digital / analog hybrid circuit includes a digital part having an EPROM for storing and holding a characteristic adjustment signal and an analog part for signal amplification as main parts. The characteristic adjustment signal is an adjustment value such as a zero-span adjustment, a sensitivity adjustment, a temperature, and a coefficient for adjusting each characteristic obtained at the time of characteristic adjustment. The protection circuit is a circuit that protects an input / output signal provided in an input / output stage connected to the outside. These characteristic adjustment circuit and protection circuit are electrically connected to the pressure detection circuit by an aluminum thin film wiring or the like.
The semiconductor pressure sensor chip 1 is bonded to the glass pedestal 3 by electrostatic bonding or the like which is a well-known technique to constitute a chip unit. In the case of a relative pressure sensor, the glass pedestal 3 has a through hole serving as a pressure introduction hole 4 for introducing pressure into the center thereof.
The resin case 6 includes a resin rigid body portion 6A and resin deformation portions 6B1 and 6B2. Further, the resin case 6 has a lead terminal 7 and a reinforcing plate 8 made of a metal plate on which the glass pedestal 3 is placed integrated and fixed in advance by an insert mold. Further, the lead terminal integrated resin assembly cell 100 is configured by fixing the glass pedestal 3 of the chip unit on the reinforcing plate 8. In the center of the resin case 6, the reinforcing plate 8 and the glass pedestal 3, pressure introducing holes 15, 9, 4 are formed so as to communicate with each other. As shown in the plan view of FIG. 11, the lead terminal 7 is arranged so that one end is located in the vicinity of the output electrode portion (not shown) of the semiconductor pressure sensor chip 1 and the other end is outside the resin case 6. The resin case 6 is fixed. The output electrode portion of the semiconductor pressure sensor chip 1 and one end of the lead terminal 7 are electrically connected by bonding with an aluminum wire 17.

The resin case 6 includes a front surface side circular groove 13 (FIGS. 10 and 11) and a back surface side circular groove 14 (FIG. 10). The circular groove 13 is circular as shown on the surface side of the lead terminal integrated resin assembly cell 100 shown in the plan view of FIG. The circular groove 14 is also formed in the same shape on the back side with the circular groove 13 and the lead terminal 7 interposed therebetween. The radii of the circular grooves 13 and 14 are both equal, and are provided in a vertically symmetrical shape with respect to a plane formed by the plate surface of the lead terminal 7. As shown in FIG. 11, the outer shape of the resin case 6 has a square-shaped portion, and has the above-described circular grooves 13 and 14 on the inner surface and the rear surface side, respectively. As the reinforcing plate 8 shown in FIG. 10, a metal plate or the like is embedded to further increase the rigidity of the resin rigid body portion 6A. The resin deformation portions 6B1 and 6B2 are composed of an upper resin deformation portion 6B1 and a lower resin deformation portion 6B2 with the lead terminal 7 interposed therebetween, and an upper end surface 6C1 for hermetically sealing the upper surface of the upper resin deformation portion 6B1, A lower surface 6C2 for hermetic sealing is provided on the lower surface of the lower resin deformation portion 6B2.
The lead terminal integrated resin assembly cell 100 having such a configuration is completed by being incorporated into a semiconductor pressure sensor as shown in FIG. In order to economically and efficiently adjust the characteristics of the lead terminal integrated resin assembly cell 100, the lead terminal integrated resin before being incorporated into the semiconductor pressure sensor using a characteristic adjusting jig as shown in FIG. Characteristic adjustment is performed in the state of the assembly cell 100. In this characteristic adjustment, even if stress is applied to the resin deformation portions 6B1 and 6B2 of the resin case 6 by the characteristic adjustment jig including the fixed jig 26, the movable jig 22, and the probe 25, the resin deformation portion. The stress is absorbed when only 6B1 and 6B2 are deformed, and the stress hardly reaches the resin rigid body portion 6A. As a result, it is possible to appropriately adjust the characteristics of the glass pedestal 3 and the semiconductor pressure sensor chip 1 mounted on the reinforcing plate 8 with extremely little influence of stress caused by the characteristic adjusting jig.

A conventional characteristic adjustment method in which the characteristic adjustment of the above-described relative pressure semiconductor pressure sensor is performed in the lead terminal integrated resin assembly cell will be described with reference to FIG. The characteristic adjusting jig 43 includes a fixed jig 26, a movable jig 22, a probe 25, and the like. The fixing jig 26 has an O-ring 20 as a sealing material and a pressure introducing hole 21 as main parts. The movable jig 22 has an O-ring 23 as a sealing material, a pressure control hole 44, and a probe 25 as main parts.
The lead terminal integrated resin assembly cell 100 is mounted on the fixing jig 26 so that the lower end surface 6C2 of the lower resin deformation portion 6B2 and the O-ring 20 are aligned, and then the O-ring 23 of the movable jig 22 and the upper resin. FIG. 8 shows that the upper end surface 6C1 of the deformable portion 6B1 is matched, the lead terminal 7 and the probe 25 are matched, and the lead terminal integrated resin assembly cell 100 is sandwiched between the fixed jig 26 and the movable jig 22. Set in the state.
In the state shown in FIG. 8, for example, the atmospheric pressure PA is applied to the fixed jig 26 and the measured pressure PM is applied to the movable jig 22, so that the semiconductor pressure sensor chip 1 is based on the atmospheric pressure. Relative pressure (PA-PM) is applied. When the diaphragm 2 of the semiconductor pressure sensor chip 1 is deformed by this relative pressure, the diffusion resistance value changes due to the piezoresistance effect of silicon, and can be converted into an output signal as a bridge voltage change of the pressure detection circuit.

While applying a predetermined temperature and pressure to the characteristic adjusting jig 43 and the lead terminal integrated resin assembly cell 100, the sensor output is adjusted to a predetermined value, and this adjustment value is adjusted via the probe 25 to the semiconductor pressure sensor chip. The characteristic adjustment work of the sensor is performed by storing and holding it in the EPROM included in 1.
Here, when the lead terminal integrated resin assembly cell 100 is sandwiched between the fixed jig 26 and the movable jig 22, stress is applied to the upper and lower resin surfaces 6C1 and 6C2 of the upper and lower resin deformation portions 6B1 and 6B2 of the resin case 6. Since the circular grooves 13 and 14 are disposed between the resin deformation portions 6B1 and 6B2 and the resin rigid body portion 6A, the stress received by the resin deformation portions 6B1 and 6B2 is absorbed in the resin deformation portions 6B1 and 6B2. Furthermore, due to the rigidity of the reinforcing plate 8, stress due to stress is hardly transmitted to the glass pedestal 3 disposed on the reinforcing plate 8 and the semiconductor pressure sensor chip 1 fixed on the glass pedestal 3. Adjustment work can be performed in the state. Therefore, before incorporating the lead terminal integrated resin assembly cell 100 into the semiconductor pressure sensor, the characteristic adjustment work can be performed in the state of only the cell. Therefore, even when measuring the temperature characteristic of the sensor by exposing to a high temperature or low temperature condition, etc. The apparatus can be miniaturized. Even when a defective product is generated, it is only necessary to discard the lead terminal integrated resin assembly cell 100, and the economic loss can be reduced (Patent Document 1).
JP 2002-286666 A (FIG. 3, paragraphs 0021 to 0026)

However, as described in Patent Document 1, in the method in which the characteristic adjustment necessary for the semiconductor relative pressure sensor is performed at the stage of the lead terminal integrated resin assembly cell 100, the resin deformation portion of the assembly cell 100 is adjusted during the characteristic adjustment. It has been found that there are cases where the degree of avoiding or mitigating the influence of the diaphragm on the gauge sensor is insufficient for the stress holding down 6B. In particular, in a semiconductor pressure sensor that requires high-precision measurement, the output of the semiconductor pressure sensor may fluctuate due to the effect of stress that is transmitted without being fully relaxed through the resin case 6. was there.
The present invention has been made in view of such problems, and an object of the present invention is to reduce the stress that a gauge sensor physically receives when adjusting the characteristics of a semiconductor pressure sensor for measuring relative pressure or absolute pressure. It is an object to provide a characteristic adjustment method and characteristic adjustment apparatus for a semiconductor pressure sensor capable of performing characteristic adjustment more appropriately with reduced influence.

  According to the first aspect of the present invention, a semiconductor pressure sensor chip that converts a measurement pressure received by a diaphragm provided on a semiconductor substrate into an electrical signal through a strain gauge formed on the surface of the diaphragm; The semiconductor pressure sensor chip comprises a resin case having a recess for holding the semiconductor pressure sensor chip via a glass pedestal, and incorporating a lead terminal for outputting an electrical signal from the semiconductor pressure sensor chip to the outside by integral molding, A semiconductor pressure sensor for adjusting the characteristics of a semiconductor pressure sensor in which a lead terminal integrated resin assembly cell formed by electrically connecting a sensor chip and the lead terminal is incorporated in the lead terminal integrated resin assembly cell. In the sensor characteristic adjustment method, one of the plate surfaces of the lead terminals of the lead terminal integrated resin assembly cell is provided. A probe for inputting / outputting an electric signal to the other surface of the plate of the lead terminal is brought into contact with a fixing jig having a recess for storing the resin case portion on the side while the resin case portion is stored in the recess. The opening end face of the movable jig provided with a pressure control hole for applying an arbitrary pressure on the wall surface is hermetically sealed to the fixed jig via a sealing material, and one main surface of the semiconductor pressure sensor chip A characteristic adjustment method for a semiconductor pressure sensor in which a predetermined pressure is introduced through the pressure control hole to form a required pressure reference chamber to adjust the characteristic.

According to the second aspect of the present invention, the semiconductor pressure sensor is used for absolute pressure measurement, and the semiconductor pressure sensor characteristic adjusting method according to the first aspect of the present invention is used.
According to the invention of claim 3, the semiconductor pressure sensor is for relative pressure measurement, the glass pedestal, the resin case of the lead terminal integrated resin assembly cell, the fixing jig, A method for adjusting the characteristics of a semiconductor pressure sensor according to claim 1, comprising pressure introduction holes for measuring relative pressures respectively communicating with each other.
According to a fourth aspect of the present invention, there is provided a characteristic adjusting device used in the characteristic adjusting method for a semiconductor pressure sensor according to the first aspect, wherein the fixing jig includes a plurality of the lead terminals. In order to adjust the characteristics of the integrated resin assembly cell, a characteristic adjusting device for a semiconductor pressure sensor having a plurality of recesses for accommodating a resin case portion on one side of the plate surface of the lead terminal is provided.
According to the invention of claim 5, the signal processing circuit connected to the probe for inputting / outputting an electric signal to / from the lead terminal of the lead terminal integrated resin assembly cell, and the signal processing circuit to the semiconductor A semiconductor pressure sensor characteristic adjusting apparatus according to claim 4, further comprising a control circuit for inputting at least one parameter indicating the characteristic of the pressure sensor.

  According to the invention of claim 6, the probe connected between the probe for inputting / outputting an electric signal to / from the lead terminal of the semiconductor pressure sensor and the signal processing circuit connected to the probe. 6. A semiconductor pressure sensor characteristic adjusting device according to claim 5, further comprising a relay circuit for switching the operation.

  According to the present invention, a semiconductor pressure sensor capable of performing characteristic adjustment more appropriately by reducing the influence of stress physically applied to the gauge sensor when adjusting characteristics of the semiconductor pressure sensor for measuring relative pressure or absolute pressure. It is possible to provide a characteristic adjusting method and a characteristic adjusting apparatus.

A semiconductor pressure sensor characteristic adjusting method and characteristic adjusting apparatus according to the present invention will be described below in detail with reference to the drawings. The present invention is not limited to the description of the examples described below unless it exceeds the gist.
FIGS. 1 and 3 respectively show a jig for characteristic adjustment of a semiconductor pressure sensor for absolute pressure measurement and a relative pressure measurement according to the present invention (the lead terminal integrated resin assembly cell other than the jig is also shown in the drawings). It is a schematic sectional drawing. FIG. 2 and FIG. 4 are cross-sectional views of the lead terminal integrated resin assembly cell of the semiconductor pressure sensor for absolute pressure measurement and relative pressure measurement according to the present invention, respectively. FIG. 5 is a plan view (a) and a cross-sectional view (b) of the fixing jig of the plural characteristic adjustment apparatus for measurement according to the present invention. FIG. 6 is a schematic configuration diagram of a characteristic adjusting apparatus according to the present invention. FIG. 7 is a plan view of the lead terminal integrated resin assembly cell of the semiconductor pressure sensor according to the present invention. FIG. 9 is a sectional view of a semiconductor pressure sensor for measuring relative pressure.

  The semiconductor pressure sensor chip 1 using a silicon semiconductor substrate as a main member is processed into a circular concave portion 5 at the center back surface by etching or the like as shown in the cross-sectional views of FIGS. . On the surface of the diaphragm 2 opposite to the concave portion 5 of the semiconductor pressure sensor chip 1, a pressure detection circuit is formed in which piezoresistive elements, not shown, composed of four diffusion resistors are configured as a Wheatstone bridge. In addition, a characteristic compensation circuit, a characteristic data holding circuit, and the like (not shown) are integrally formed by a semiconductor process in the thick portion around the surface of the diaphragm 2 of the semiconductor pressure sensor chip 1. Further, as shown in FIGS. 2 and 4, the semiconductor pressure sensor chip 1 is bonded to the glass pedestals 3a and 3b by electrostatic bonding or the like to constitute a sensor unit. When this sensor unit is used for absolute pressure measurement (FIG. 2), the space formed by the back surface recess 5 of the semiconductor pressure sensor chip 1 and the glass pedestal 3a is evacuated to serve as a measurement reference chamber. In the sensor unit for relative pressure measurement (FIG. 4), a through hole serving as a pressure introduction hole 4 communicating with the back surface side recess 5 of the semiconductor pressure sensor chip 1 is provided in the glass pedestal 3b. These sensor units are bonded and fixed to the bottom surface of the recess 6d of the resin case 6a shown in FIG. 2 for absolute pressure measurement by a silicone-based adhesive, and are used as a pressure introduction hole 4 shown in FIG. 4 for relative pressure measurement. The pressure introduction hole 4 of the glass pedestal 3b is bonded and fixed so as to communicate with the bottom surface of the recess 6e of the resin case 6b.

  The resin cases 6a and 6b may be molded from a thermoplastic resin or a thermosetting resin, but a PPS (polyphenylene sulfide) resin is preferable. As shown in FIGS. 2, 4, and 7, the resin cases 6 a and 6 b are formed by insert molding the lead terminals 7. The lead terminal 7 is made of phosphor bronze. An electrode 1a (FIG. 7) for outputting a detected pressure signal formed on the surface of the semiconductor pressure sensor chip 1 is electrically connected to one end 7a (FIG. 7) of the lead terminal 7 by an aluminum wire 17 by wire bonding. Has been. A circular dotted line at the center of the semiconductor pressure sensor chip 1 in FIG. By forming the circular grooves 13a, 13b and the dam-like convex portions 6c in the resin cases 6a, 6b, the coat gel 18 covering the surface of the semiconductor pressure sensor chip 1 is cast into the concave portions inside the circular grooves 13. Sometimes it doesn't overflow. The outer shape of the resin cases 6a and 6b is approximately square when the shape of the side wall surface from which the lead terminal 7 leads out from the inside of the resin is viewed from above the semiconductor pressure sensor chip 1 (FIG. 7). The coat gel 18 covering the semiconductor pressure sensor chip 1 transmits a measurement pressure applied to the semiconductor pressure sensor chip 1 and functions as a protective film that prevents the corrosive medium from coming into contact with the semiconductor pressure sensor chip 1. The above-described sensor unit including the semiconductor pressure sensor chip 1 and the glass pedestals 3a and 3b, and the resin cases 6a and 6b in which the lead terminals 7 are integrally molded, lead-terminal integrated resin assembly cells 10 shown in FIGS. , 11 are configured.

Next, an example of the configuration of the semiconductor relative pressure sensor incorporating the relative pressure measuring lead terminal integrated resin assembly cell 11 shown in FIG. 4 will be described with reference to the cross-sectional view of FIG.
The lead terminal integrated resin assembly cell 11 shown in FIG. 4 is placed in a state where the outer casing 32 made of a thermosetting resin or a thermoplastic resin is placed with the dam-like convex portion 6c of the resin case 6b of the cell 11 facing down. The adhesive 33 is fixed to the groove. The lead terminal 7 and the connector terminal 34 are connected by an aluminum wire 35. A silicone gel 36 is filled so as to cover the lead terminal 7 and the connector terminal 34. A cover 38 having an air introduction hole 37 is put on the outer case 32 and bonded.
The pressure to be measured introduced from the pressure introduction pipe 31 of the outer case 32 is received by the surface of the semiconductor pressure sensor chip 1 on the side where the gauge sensor is formed, and from the air introduction hole 37 of the cover 38 to the concave side of the chip back surface. By receiving atmospheric pressure, the relative pressure based on atmospheric pressure is measured.
In the above description, the relative pressure measurement lead terminal integrated resin assembly cell 11 shown in FIG. 4 is used. However, the absolute pressure measurement lead terminal integrated resin assembly cell 10 shown in FIG. Thus, a semiconductor pressure sensor for measuring absolute pressure can be used. In this case, the air introduction hole 37 shown in FIG. 9 may be omitted.
Next, the lead terminal integrated resin assembly cell 10 (FIG. 2) of the semiconductor pressure sensor for absolute pressure measurement according to the present invention will be described using the schematic cross-sectional view of the absolute pressure measurement characteristic adjusting jig shown in FIG. The characteristic adjustment method used will be described. The characteristic adjusting jig 27 of the absolute pressure measuring semiconductor pressure sensor includes a fixed jig 26 a and a movable jig 22. The movable jig 22 includes an O-ring 23 as a sealing material provided for the purpose of hermetic sealing on a joint end surface with the fixed jig 26a, and a probe 25a for inputting and outputting an electric signal through a lead terminal. Configured as The lead terminal integrated resin assembly cell 10 is mounted in a recess provided in the fixing jig 26a with the surface side of the diaphragm 2 facing upward (while maintaining the vertical relationship shown in the sectional view of FIG. 2). Subsequently, the movable jig 22 is set to the fixed jig 26a so as to be airtightly fitted through an O-ring 23 as a sealing material, and the lead terminal 7 and the probe 25a are in contact with each other. In the state shown in FIG. 1, for example, the surface of the semiconductor pressure sensor chip 1 is applied to the movable jig 22 side by applying the measured pressure PM through a pressure control hole (not shown) provided in the movable jig 22. When the diaphragm 2 is distorted, the diffusion resistance value changes due to the piezoresistance effect of the silicon semiconductor substrate, and is converted into an output signal as a change in the bridge voltage of the pressure detection circuit. Here, when the lead terminal integrated resin assembly cell 10 is fixed by holding the lead terminal 7 with the probe 25a, the stress applied to the semiconductor pressure sensor chip 1 through the resin case 6a is the conventional lead terminal shown in FIG. When the resin deformed portion 6B of the integrated resin assembly cell 100 is fixed by pressing with the movable jig 22, it is much smaller than the stress applied to the semiconductor pressure sensor chip 1 through the resin case 6, so that proper characteristic adjustment work is performed. Can be done.

Next, the structure using the lead terminal integrated resin assembly cell 11 of the relative pressure semiconductor sensor according to the present invention will be described with reference to FIGS. 4 is different from the lead terminal integrated resin assembly cell 10 of the absolute pressure measurement semiconductor pressure sensor shown in FIG. 2 in that the lead terminal integrated resin assembly cell 11 of the semiconductor pressure sensor for relative pressure measurement shown in FIG. 4 is provided with a through hole serving as a pressure introducing hole 4 in the glass pedestal 3b. As a result, by applying a measured pressure PM from the upper surface of the semiconductor pressure sensor chip 1 and a reference pressure, for example, the atmospheric pressure PA, from the lower surface of the semiconductor pressure sensor chip 1 through the pressure introduction hole 4, the relative pressure (PM− The lead terminal integrated resin assembly cell 11 capable of measuring (PA) is obtained.
As shown in the schematic cross-sectional view of the relative pressure measurement characteristic adjustment jig in FIG. 3, the characteristic adjustment jig 28 of the relative pressure measurement semiconductor pressure sensor is the same as the absolute pressure measurement semiconductor pressure sensor shown in FIG. The difference from the characteristic adjusting jig 27 is that an O-ring 24 and a pressure introducing hole 21 are provided in the fixing jig 26b of FIG. The lead terminal integrated resin assembly cell 11 is mounted on the fixing jig 26b so that the lower surface hermetic sealing surface and the O-ring 24 (sealing material) coincide with each other, and is fixed to the O-ring 23 (sealing material) of the movable jig 22. The lead terminal integrated resin assembly cell 11 is set to the fixing jig 26b so as to be pressed by the probe 25a so that the tool 26b matches and the lead terminal 7 and the probe 25a match each other. The above-described O-rings 23 and 24 need only be hermetically sealed. Therefore, other than the name of the O-ring, as long as the sealing function can be easily applied and released, other O-rings can be used. It may be a thing. In the state shown in FIG. 3, for example, the semiconductor pressure sensor chip 1 is based on the atmospheric pressure PA by applying the atmospheric pressure PA to the fixed jig 26b side and applying the measured pressure PM to the movable jig 22 side. The relative pressure (PM-PA) is applied. When the diaphragm 2 of the semiconductor pressure sensor chip 1 is deformed by the relative pressure, the diffusion resistance value changes due to the piezoresistance effect of the semiconductor pressure sensor chip 1 and can be converted into an output signal as a bridge voltage change of the pressure detection circuit. .

  Next, an example of a method for adjusting the characteristics of the semiconductor pressure sensor according to the present invention will be described with reference to FIGS. As shown in FIG. 6, the semiconductor pressure sensor characteristic adjusting device includes a movable jig 22 having a pressure control hole 41, a fixed jig 26, a probe 25 provided in the movable jig 22, and a probe 25. The signal processing circuit 29 is connected, and the control circuit 30 is connected to the signal processing circuit 29 and inputs and controls a parameter indicating the characteristics of the semiconductor pressure sensor. The parameter indicating the characteristics of the semiconductor pressure sensor is, for example, an adjustment value such as a coefficient value for adjusting each of these characteristics obtained during sensitivity adjustment, offset zero point adjustment, and temperature characteristic adjustment. In the state shown in FIG. 6, for example, each characteristic of a predetermined semiconductor pressure sensor such as sensitivity, offset zero point, and temperature characteristic is input to the control circuit 30, and the signal processing circuit 29 receives characteristic data obtained from the semiconductor pressure sensor. Then, the characteristic adjustment is performed so as to coincide with a predetermined input value of each characteristic obtained from the control circuit 30. In addition, an arbitrary lead terminal as an input destination of the characteristic adjustment signal input from the signal processing circuit 29 is provided by the relay circuit 42 provided between the probe 25 provided in the movable jig 22 and the signal processing circuit 29. By selecting, it is possible to arbitrarily arrange the functions of the lead terminals 7 of the lead terminal integrated resin assembly cell 11. As shown in FIG. 7, for example, the connection of the power supply terminal, the ground terminal, and the output measurement terminal of the control circuit is switched by the relay circuit 42 to each of the three lead terminals 7 of the lead terminal integrated resin assembly cell 10. As a result, it is possible to arbitrarily assign, and it is possible to manufacture the lead terminal integrated resin assembly cell 10 according to the specifications by using a common characteristic adjusting device. As described above, the production line equipment for the semiconductor pressure sensor for absolute pressure measurement and the semiconductor pressure sensor for relative pressure measurement can be made common by only changing the fixing jig 26, the capital investment can be reduced, and the cost can be reduced. Can be planned.

  Further, FIG. 5 shows a plan view (a) and a cross-sectional view (b) of a fixing jig of the plural characteristic adjustment apparatus for measurement according to the present invention. In FIG. 5A, the fixing jig 26 is provided with a recess for mounting the five lead terminal integrated resin assembly cells 10. 5 shows a state in which the lead terminal integrated resin assembly cell 10 is mounted in the rightmost concave portion among the five concave portions in FIG. By using the fixing jig 26, the characteristic adjustment can be performed efficiently.

It is a schematic sectional drawing of the characteristic adjustment jig | tool (including a lead terminal integrated resin assembly cell) of the semiconductor pressure sensor for absolute pressure measurement concerning this invention. It is sectional drawing of the lead terminal integrated resin assembly cell of the semiconductor pressure sensor for absolute pressure measurement concerning this invention. It is a schematic sectional drawing of the characteristic adjustment jig | tool (including a lead terminal integrated resin assembly cell) of the semiconductor pressure sensor for relative pressure measurement concerning this invention. It is sectional drawing of the lead terminal integrated resin assembly cell of the semiconductor pressure sensor for relative pressure measurement concerning this invention. It is the top view and sectional drawing of the jig | tool for characteristic adjustment for multiple measurements concerning this invention. It is a schematic block diagram of the characteristic adjustment apparatus concerning this invention. It is a top view of the lead terminal integrated resin assembly cell of the semiconductor pressure sensor concerning this invention. It is sectional drawing of the characteristic adjustment jig | tool of the conventional semiconductor pressure sensor for relative pressure measurement. It is sectional drawing of the semiconductor pressure sensor for a relative pressure measurement. It is sectional drawing of the lead terminal integrated resin assembly cell integrated in the inside of the conventional semiconductor relative pressure sensor. It is a top view of the conventional lead terminal integrated resin assembly cell.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor pressure sensor chip 2 Diaphragm 3, 3a, 3b Glass base 4, 9, 15, 21 Pressure introduction hole 5 Concave part 6, 6a, 6b Resin case 6c Convex part 7 Lead terminal 7a One end 10 Lead terminal integrated resin assembly cell 11 Lead terminal integrated resin assembly cell 13, 13a, 13b Circular groove 17 Aluminum wire 18 Coat gel 22 Movable jig 25, 25a Probe 26, 26a Fixing jig 27, 28 Characteristic adjustment jig 29 Signal processing circuit 30 Control circuit 42 Relay Circuit 41, 44 Pressure control hole.

Claims (6)

A semiconductor pressure sensor chip that converts a measurement pressure received by a diaphragm provided on a semiconductor substrate into an electrical signal through a strain gauge formed on the surface of the diaphragm, and a recess that holds the semiconductor pressure sensor chip via a glass pedestal. And a resin case in which a lead terminal for outputting an electrical signal from the semiconductor pressure sensor chip to the outside is incorporated by integral molding, and the semiconductor pressure sensor chip and the lead terminal are electrically connected. The lead terminal integrated resin assembly cell in the characteristic adjustment method of a semiconductor pressure sensor in which the semiconductor pressure sensor in which the lead terminal integrated resin assembly cell is incorporated is adjusted in the state of the lead terminal integrated resin assembly cell. The lead terminal plate surface of the lead terminal has a concave portion for accommodating the resin case portion on one side. In a state where the resin case portion is housed in the recess, the jig is brought into contact with a probe for inputting / outputting an electric signal to the other surface of the plate surface of the lead terminal, and pressure for applying an arbitrary pressure. The opening end face of the movable jig having a control hole on the wall surface is hermetically sealed to the fixed jig through a sealing material, and a required pressure is applied to one main surface of the semiconductor pressure sensor chip through the pressure control hole. A method for adjusting the characteristics of a semiconductor pressure sensor, wherein the characteristics are adjusted by introducing a required pressure reference chamber. 2. The semiconductor pressure sensor characteristic adjusting method according to claim 1, wherein the semiconductor pressure sensor is used for measuring an absolute pressure. The semiconductor pressure sensor is for measuring a relative pressure, and includes a pressure introducing hole for measuring a relative pressure that communicates with the glass pedestal, the resin case of the lead terminal integrated resin assembly cell, and the fixing jig. The method for adjusting characteristics of a semiconductor pressure sensor according to claim 1. 2. The characteristic adjusting apparatus used in the characteristic adjusting method for a semiconductor pressure sensor according to claim 1, wherein the fixing jig adjusts the characteristics of the plurality of lead terminal integrated resin assembly cells. A device for adjusting characteristics of a semiconductor pressure sensor, comprising a plurality of recesses for accommodating a resin case portion on one side of a plate surface of a terminal. A signal processing circuit connected to a probe for inputting / outputting an electrical signal to / from a lead terminal of the lead terminal integrated resin assembly cell, and at least one parameter indicating characteristics of the semiconductor pressure sensor to the signal processing circuit 5. The semiconductor pressure sensor characteristic adjusting apparatus according to claim 4, further comprising a control circuit. A relay circuit for switching an operation of a connected probe is provided between a probe for inputting / outputting an electric signal to / from a lead terminal of a semiconductor pressure sensor and a signal processing circuit connected to the probe. 5. The semiconductor pressure sensor characteristic adjusting device according to claim 5.

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