JP2009013462A - Substrate processing equipment - Google Patents

Abstract

Provided is a substrate processing apparatus capable of detecting an abnormality during processing of a semiconductor substrate even if processing of one processing unit is not completed.
A semiconductor manufacturing apparatus includes a gas introduction line for introducing a gas, a cathode electrode on which a wafer is placed, and a high-frequency oscillator for supplying high-frequency power. A memory for storing and storing data of a self-bias voltage generated at the cathode electrode 130 for a predetermined time when the wafer W is processed by using plasma generated by the high frequency power to be generated. The amount of change of the self-bias voltage is obtained from the means 142 and the data of the self-bias voltage stored in the storage means 142, and the self-bias voltage is stabilized depending on whether or not the calculated amount of change is smaller than a preset allowable amount. And a controller 118 for judging whether or not.
[Selection] Figure 4

Description

  The present invention relates to a substrate processing apparatus for processing a semiconductor wafer, a glass substrate, and the like, and relates to monitoring control of a self-bias voltage of a semiconductor manufacturing apparatus that processes a substrate or the like using plasma.

  2. Description of the Related Art A substrate processing apparatus using a chemical vapor deposition method using plasma as a film forming process for forming an element on a substrate in a semiconductor element manufacturing process is known. In such a substrate processing apparatus, a self-bias voltage is used as a parameter for determining whether or not the substrate has been processed normally.

  However, the self-bias voltage includes the total supply gas flow rate of the gas supplied for substrate processing, the gas composition ratio, the pressure value in the vacuum chamber in which the substrate processing is performed, and the supply high-frequency power value supplied to generate plasma. and process parameters, such as the constituent material of the electrodes used to generate the plasma, and to vary such a surface treatment, it is difficult to predict whether made in advance how much value. Therefore, it is not possible to use a monitoring method that considers an abnormal value if the monitored value deviates more than an allowable amount from a certain set value. To determine that the self-bias voltage is abnormal, There is only a means for inspecting the film composition of the subsequent substrate or making a judgment by an operator (administrator, operator, operator, etc.) with reference to the processing history for the substrate. However, these methods, for example, when a plurality of substrates are used as one processing unit, can be performed after all the processing of such one processing unit is completed. When an abnormality has occurred in processing, there has been a problem that all semiconductor substrates may be disposed of as failed products that do not meet the specifications.

  In the present invention, for example, when a plurality of substrates are used as one processing unit, an abnormality can be detected during the processing of a semiconductor substrate even if the processing of one processing unit is not completed. Then, for example, an object of the present invention is to provide a substrate processing apparatus capable of stopping processing.

The first feature of the present invention is that a gas supply means for introducing gas into the processing chamber, a substrate mounting table for mounting a substrate, a high frequency power supply means for supplying high frequency power,
A substrate processing apparatus that performs a predetermined process on the substrate using plasma generated by the high-frequency power supplied from the high-frequency power supply means, and generates the plasma to process the substrate Storage means for accumulating and storing the self-bias voltage data generated on the substrate mounting table for a predetermined time, and a change for determining the amount of change in the self-bias voltage from the self-bias voltage data stored in the storage means. There is provided a substrate processing apparatus comprising: an amount calculating unit; and a determining unit that determines whether the self-bias voltage is stable depending on whether the change amount calculated by the change amount calculating unit is smaller than a preset allowable amount. .

  The second feature of the present invention is that a processing chamber for processing a substrate, a gas supply means for introducing a gas into the processing chamber, and a substrate mounting provided in the processing chamber on which the substrate is placed. A high-frequency power supply means for supplying high-frequency power for generating a plasma for performing predetermined processing on the substrate in the processing chamber, and a self-bias voltage generated in the substrate mounting table is stable A substrate processing apparatus comprising: a comparison unit that compares a self-bias voltage reference value that is a value of a value with a preset allowable amount; and a determination unit that determines abnormality of the self-bias voltage based on the comparison by the comparison unit It is in.

  The third feature of the present invention is that a gas introducing means, a vacuum container in which an exhaust means and a high frequency power supply means are connected, and a plasma generating means for generating plasma by high frequency power in the vacuum container; Setting means for setting a self-bias voltage reference value to be a monitoring reference during plasma processing, at least storage means for storing a self-bias voltage reference value set by the setting means, and stored in the storage means A comparison unit that compares a self-voltage bias reference value with a preset allowable value, a determination unit that determines abnormality based on a comparison by the comparison unit, and a case where abnormality is determined by the determination unit And a semiconductor manufacturing apparatus having notification means for notifying abnormality.

  Hereinafter, an embodiment of degeneration control in a substrate processing apparatus of the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic configuration diagram of an in-line type semiconductor manufacturing apparatus which is an example of a substrate processing apparatus according to an embodiment of the present invention. In the configuration shown in FIG. 1, a plurality of wafer transfer robots and process chambers and two load-lock chambers for carrier delivery are connected in parallel. The semiconductor manufacturing apparatus uses a carrier for transporting a substrate (wafer).

  In FIG. 1, an in-line type semiconductor manufacturing apparatus 1 is composed of two channels, and basically includes a plurality of modules (first processing module 2 and second processing module 3) having the following functions. It is configured. The first processing module 2 has a process chamber PM1 and a vacuum lock chamber VL1, and the second processing module 3 has a process chamber PM2 and a vacuum lock chamber VL2. That is, the semiconductor manufacturing apparatus 1 is provided with the gate valves PGV1 and PGV2 between the process chambers PM1 and PM2 and the vacuum lock chambers VL1 and VL2, respectively, and the vacuum lock chambers VL1 and VL2 are respectively vacuum robots. A multi-stage slot having a buffer slot LS in the upper stage of the handlers TH1 and TH2 and a cooling stage CS in the lower stage is provided. Further, the atmospheric loader LM includes an aligner AU and a loader handler LH. In addition, loader doors LD1 and LD2 are provided between the vacuum lock chambers VL1 and VL2 and the atmospheric loader LM.

  The function of each module will be described in more detail. The process chambers PM1 and PM2 have a function of performing film formation processing on a wafer by a chemical processing reaction such as chemical vapor deposition (CVD) and plasma chemical vapor deposition, and adding value to the wafer. Yes. Furthermore, it has functions according to the respective film forming methods such as gas introduction and exhaust treatment, furnace temperature control, and plasma discharge treatment.

  The vacuum lock chambers VL1 and VL2 can control the vacuum / atmospheric pressure in the chamber, and are equipped with a robot for loading / unloading wafers into / from the process chambers PM1 and PM2. Further, the vacuum lock chambers VL1 and VL2 are internally provided with multistage slots that can hold wafers. For example, in the case of a two-stage slot, a buffer slot LS for holding the wafer in the upper stage and a cooling stage CS for cooling the wafer in the lower stage are provided.

  The atmospheric loader LM is equipped with a robot that can carry wafers into and out of each load lock chamber (that is, vacuum lock chambers VL1 and VL2). In addition, an aligner AU mechanism for correcting a wafer shift at the time of conveyance and aligning a notch of the wafer (a notch for determining the direction of the wafer) in a fixed direction is incorporated. Further, the atmospheric loader LM includes a loader handler LH that carries in and out the wafers with the load ports LP1 and LP2.

  The load ports LP1 and LP2 as introduction ports have a function capable of delivering (introducing) cassettes CS1 and CS2 as carriers storing wafers (which can hold a plurality of wafers) with the outside of the semiconductor manufacturing apparatus 1. I have. Further, the carrier ID can be read / written.

  In the configuration of the semiconductor manufacturing apparatus 1 as shown in FIG. 1, a set of process chamber PM1 and a set of vacuum lock chamber VL1 are paired, a set of process chamber PM2 and a set of vacuum lock chamber VL2 are set as another pair, Connect the line to the atmospheric loader LM. In the configuration of the semiconductor manufacturing apparatus 1 in FIG. 1, there are two lines, but more lines may be used.

  Further, a control controller (not shown) is connected to the semiconductor manufacturing apparatus 1 shown in FIG. 1, and the control controller has means for executing transfer control, process control, and the like. FIG. 2 is a block diagram showing a configuration of a control controller for controlling the semiconductor manufacturing apparatus 1 shown in FIG.

  In FIG. 2, the control controller 11 includes an operation unit 12, an overall control controller 13, a PMC (1) 14, and a PMC (2) 15 connected via a LAN line 16. In addition, a VL robot controller 13a, an atmospheric robot controller 13b, an MFC 13c, and the like are connected to the overall control controller 13. Further, the PMC (1) 14 is connected to an MFC 14a, an APC 14b, a temperature controller 14c, a valve I / O 14d, and the like. The MFC 14a is a mass flow controller for controlling the gas flow rate, and the APC 14b is an auto pressure controller for controlling the pressure in the process chamber PM. The temperature controller 14c controls the temperature in the process chamber, and the valve I / O 14d is an input / output port for controlling ON / OFF of a gas or exhaust valve. The PMC (2) 15 has a similar configuration.

  The storage unit 18 is connected to the LAN line 18 and stores instruction data and various recipes (process recipes, dummy substrate recipes, etc.) input via a screen displayed on the operation unit 12.

  The operation unit 12 has functions for displaying screens such as system control command instructions, monitor display, logging data, alarm analysis, and parameter editing. The overall controller 13 also performs operation control of the entire system, control of the VL robot controller 13a, control of the atmospheric robot controller 13b, and VL exhaust system control for controlling the MFC 13c, valves, pumps, and the like.

  Next, an operation example of the control controller 11 shown in FIG. 2 will be described. Receiving the command instruction from the operation unit 12, the overall controller 13 instructs the atmospheric robot controller 13b to perform a wafer transfer instruction. After the corresponding wafer is transferred from the carrier to the buffer slot LS of the vacuum lock chamber VL, exhaust control of the vacuum lock chamber VL (that is, control of pumps and valves) is performed. Then, exhaust control of the vacuum lock chamber VL (that is, control of pumps and valves) is performed. Then, when the vacuum lock chamber VL reaches a predetermined negative pressure, the control parameter for giving added value to the wafer relative to the corresponding PMC (that is, PMC (1) 14 or PMC (2) 15). Instructs execution of a certain process recipe.

FIG. 3 shows a plasma CVD processing apparatus 100 used as at least one of the process chambers PM1 and PM2.
As shown in FIG. 3, the plasma CVD processing apparatus 100 includes a vacuum vessel 104 that forms a processing chamber 102. A wafer loading / unloading port 106 for loading / unloading a wafer W as a substrate to be processed into / from the processing chamber 102 is opened on the side wall of the vacuum chamber 104, and the wafer loading / unloading port 106 is opened and closed by a gate valve 108. It is configured as follows.

  One end of an exhaust line 110 is connected to the bottom wall of the vacuum vessel 104, and the other end of the exhaust line 110 is connected to a vacuum exhaust device 111 as vacuum exhaust means. An exhaust conductance adjusting valve 112 as an exhaust conductance adjusting means is interposed in the middle of the exhaust line 110. An exhaust conductance adjustment valve control device 114 is electrically connected to the exhaust conductance adjustment valve 112, and a pressure sensor 116 that detects the pressure in the processing chamber 102 is electrically connected to the exhaust conductance adjustment valve control device 114. It is connected. The exhaust conductance adjustment valve control device 114 is configured to adjust the pressure in the processing chamber 102 by controlling the exhaust conductance adjustment valve 112 based on the detection result from the pressure sensor 116 and the command from the controller 118. Yes.

  An anode electrode (anode) 120 is installed in the processing chamber 102 of the vacuum vessel 104. A gas passage 124 is formed inside the anode electrode 120, and a shower plate 122 is fitted on the lower surface of the anode electrode 120 so as to partition the gas passage 124. A large number of air outlets 126 are formed in the shower plate 122 so as to blow out gas in a shower shape. A gas introduction line 128 serving as a gas introduction means is connected to the gas passage 124 of the anode electrode 120, and various types of gases are introduced into the gas passage 124 from the gas introduction line 128.

  On the other hand, a cathode electrode (cathode) 130 is installed below the processing chamber 102 of the vacuum vessel 104. The cathode electrode 130 is also configured to serve as a substrate mounting table (susceptor) that holds the wafer W in a state where the wafer W is placed. The cathode electrode 130 also serves as a susceptor to heat the held wafer (not shown). Is built-in.

  A high-frequency oscillator 132 serving as a high-frequency power supply unit is connected between the anode electrode 120 and the cathode electrode 130 via an impedance matching unit 134, and the high-frequency oscillator 132 is connected to the controller 118 via a communication line 136. . The high frequency oscillator 132 is adapted to apply a high frequency voltage between the anode electrode 120 and the cathode electrode 130 via the impedance matching unit 134 in response to a command from the controller 118.

  A voltmeter 138 as a self-bias voltage detection means is connected to the cathode electrode 130, and the voltmeter 138 is configured to transmit a detection result to the controller 118 through the communication line 140. A storage device 142, a display device 144 and an input device 146 are connected to the controller 118.

  The controller 118 has a function of managing the traveling wave power amount and the accumulated self-bias voltage as a software function. For this reason, the controller 118 is configured to acquire a traveling wave power value from the high frequency oscillator 132 through the communication line 136 as data related to plasma processing and store it in the storage device 142. Further, the controller 118 is configured to acquire a self-bias voltage value from the voltmeter 138 through the communication line 140 as data related to plasma processing and store it in the storage device 142.

  Next, a method for forming a CVD film on the wafer W by the plasma CVD apparatus 100 according to the above configuration will be described.

  When the wafer W on which the CVD film is to be formed is transferred to the wafer loading / unloading port 106, the gate valve 108 is opened, and the wafer W is loaded into the processing chamber 102 from the wafer loading / unloading port 106 to serve as a susceptor cathode. It is placed on the electrode 130. When the wafer W is placed and held on the cathode electrode 130, the wafer loading / unloading port 106 is closed by the gate valve 108. The inside of the processing chamber 102 is exhausted by the vacuum exhaust device 111 through the exhaust line 110 and the exhaust conductance adjustment valve 112.

  While the inside of the processing chamber 102 is maintained at a predetermined pressure, the source gas is introduced into the gas passage 124 from the gas introduction line 128 and blown into the processing chamber 102 from the outlet 126 of the shower plate 122 in a shower shape. As a method of maintaining the pressure in the processing chamber 102 constant, a feedback control method in which the exhaust conductance adjusting valve 112 is controlled based on a signal output from the pressure sensor 116 and input to the exhaust conductance adjusting valve control device 114. Is used.

In a state where the inside of the processing chamber 102 is maintained at a predetermined pressure, the power value set in the controller 118 from the input device 146 is set in the high frequency oscillator 132 through the communication line 136, and the high frequency power is generated by the high frequency oscillator 132. The high frequency power generated by the high frequency oscillator 132 is applied to the anode electrode 120 through the impedance matching unit 134.
When high frequency power is applied, plasma is generated between the anode electrode 120 and the cathode electrode 130. The plasma generated in this manner decomposes or activates the raw material gas blown into the processing chamber 102 in a shower-like manner, and deposits it on the wafer W held by the cathode electrode 130 that also serves as a susceptor. It is formed.

  In the semiconductor manufacturing apparatus 1 described above, the self-bias voltage is used as a parameter for determining whether or not the wafer W has been processed normally. Here, the self-bias voltage generates the total supply gas flow rate of the gas supplied to the processing chamber 102, the gas composition ratio, the pressure value in the vacuum vessel 104 where the substrate processing is performed, and plasma for substrate processing. The self-bias voltage varies depending on the process parameters such as the supply high-frequency power value supplied from the high-frequency oscillator 132, the constituent materials of the anode electrode 120 and the cathode electrode 130 used for generating plasma, and the surface treatment thereof. but it is difficult to predict whether made in advance how much value. Therefore, it is not possible to use a monitoring method that considers an abnormal value if the monitored value deviates by more than an allowable amount from a certain set value. To determine that the self-bias voltage is abnormal, The only means is to inspect the film composition of the subsequent wafer W or to determine the interval with reference to the processing history for the wafer W. However, these methods can be performed after all the processes of one processing unit are completed when a plurality of wafers W are used as one processing unit. If the process is abnormal, there is a possibility that all the wafers W will be disposed of as failed products that do not satisfy the specifications.

  Therefore, in the semiconductor processing apparatus of this embodiment, data of self-bias voltage generated when processing the wafer W by generating plasma is accumulated for a predetermined time, and the amount of change of the self-bias voltage after the predetermined time is set. Whether or not the self-bias voltage is stable is determined based on whether or not it becomes smaller than the set allowable amount for a predetermined time. Hereinafter, determination of whether or not the self-bias voltage in the present embodiment is stable will be described.

  FIG. 4 is a graph for explaining a method for monitoring the self-bias voltage and determining whether the self-bias voltage is stable. The elapsed time is shown on the horizontal axis, and the value of the self-bias voltage is shown on the vertical axis. ing. The self-bias voltage is set with a self-bias voltage reference value Vs, a permissible value lower limit Vmin that is a self-bias voltage monitoring permissible value, and a permissible value upper limit Vmax. The value is compared to monitor whether the self-bias voltage is within an acceptable range. That is, if the voltage monitor value exceeds the allowable range at the time t2 when the preset self-bias voltage monitoring time t has elapsed from the time t1 when the self-bias voltage monitor value exceeds the allowable range, it is determined that there is an abnormality. For example, processing at the time of occurrence of abnormality such as stopping the substrate processing is performed. FIG. 4 is displayed on the display device 144. Therefore, since the operator can confirm sequentially, the process at the time of abnormality is promptly started.

FIG. 5 is a flowchart showing the overall flow of monitoring the self-bias voltage.
As shown in FIG. 5, when monitoring of the self-bias voltage is started, a self-bias voltage stabilization allowable value, a self-bias voltage stabilization time, a self-bias voltage monitoring allowable value, and a self-bias voltage monitoring allowable value, which are reference values for monitoring, The self-bias voltage monitoring time is set, and then plasma processing is started. That is, the allowable self-bias voltage stabilization value is set in step S10, the self-bias voltage stabilization time is set in step S12, the self-bias voltage monitoring allowable value is set in step S14, and the self-bias voltage is set in step S16. The monitoring time is set, and then plasma processing consisting of a loop from step S18 to step S30 is started.

  When the plasma processing is started in step S18, it is determined whether or not the sampling time has passed in the next step S20, and if it is determined that the sampling time has not passed, step S30 to step S18. Return to. On the other hand, if it is determined in step S20 that the sampling time has elapsed, in the next step S22, it is monitored whether the self-bias voltage has been stabilized, and a determination is made.

  If it is determined in step S22 that the self-bias voltage has not been stabilized, self-bias voltage stability determination processing is performed in the next step S24, and then the process returns from step S30 to the start of plasma processing in step S18. Details of the self-bias voltage stability determination processing in step S24 will be described later.

  When it is determined in step S22 that the self-bias voltage has been stabilized, in next step S26, the value of the monitored self-bias voltage is determined by the allowable lower limit Vmin and the allowable upper limit Vmax. It is determined whether the voltage monitoring allowable value is within the allowable range. If it is determined that the monitored self-bias voltage value is within the allowable value, the process returns from step S30 to step S18.

  If it is determined in step S26 that the monitored self-bias voltage value is not within the allowable range of the self-bias voltage monitoring allowable value, the monitored self-bias voltage value is determined to be the self-bias voltage in next step S28. Whether or not the time that is not within the allowable range of the monitoring allowable value exceeds the self-bias voltage monitoring time t is monitored and determined. If it is within the self-bias voltage monitoring time t, the process returns from step S30 to step S18.

  On the other hand, if it is determined in step S28 that the time when the monitored self-bias voltage value is not within the allowable range of the self-bias voltage monitoring allowable value exceeds the self-bias voltage monitoring time t, the next step In S32, for example, processing at the time of occurrence of an abnormality such as stopping the substrate processing is performed.

FIG. 6 is a flowchart showing details of the flow of the process of monitoring and determining whether or not the self-bias voltage shown in step S24 in FIG. 5 is stable (self-bias voltage determination process).
As shown in FIG. 6, when the self-bias voltage stability determination process is started, the self-bias voltage monitor value is stored in the data buffer in step S100. That is, the value of the self voltage bias is acquired from the voltmeter 138 every sampling time Δt and stored in the storage device 142.

  At this time, two data buffers having a first-in first-out (FIFO) structure capable of storing n pieces of data as shown in FIG. 7 are created (data buffer 1 and data buffer 2), and these data buffers are shown in FIG. Thus, the data overflowing in the data buffer 1 is put into the data buffer 2. As a result, data of up to n × Δt can be buffered and held.

  In the next step S102, it is determined whether or not the data buffer 1 and the data buffer 2 are all filled. If it is not determined in step S102 that all are buried, the self-bias voltage stability determination NG is returned in the next step S116.

  If it is determined in step S102 that the data buffer 1 and the data buffer 2 are all filled, the data stored in the data buffer 1 in step S104 is the data stored in the data buffer 2 in step S106. The average value from the time when all data is stored in the data buffer is calculated. In the next step S108, the average value of the data stored in the data buffer 1 and the average value of the data stored in the data buffer 2 are calculated. In the next step S110, it is determined whether or not the average value difference calculated in step S108 is within a preset allowable range.

  If it is determined in step S110 that the difference between the average values is not within the allowable range, the self-bias voltage stability determination NG is returned in the next step S116. On the other hand, if it is determined in step S110 that the average value difference is within the allowable range, a preset stabilization time has elapsed in the next step S112 in a state where the average value difference is within the allowable range. If the stabilization time has not elapsed, the self-bias voltage stability determination NG is returned in the next step S116.

  On the other hand, if it is determined in step S112 that the stabilization time has elapsed, it is considered that the self-bias voltage has been stabilized, and self-bias voltage stability determination OK is returned in the next step S114. As described above, by calculating the moving average within the interval of the self-bias voltage monitor value, the influence of noise and the like is excluded, and by calculating the difference between adjacent intervals, the amount of change in the self-bias voltage monitor value is obtained. ing. Then, the value of the self-bias voltage at this time is stored as a self-bias voltage reference value for monitoring the self-bias voltage.

  According to the present embodiment, it is possible to improve the yield of the semiconductor manufacturing apparatus 1 by monitoring the self-bias voltage, which has conventionally been difficult to determine abnormality in real time, and determining abnormality. The quality of the wafer W to be processed can be improved.

  The above-described embodiment can be applied not only to a semiconductor manufacturing apparatus but also to an apparatus for processing a glass substrate such as an LCD apparatus.

[Appendix]
According to one aspect of the present invention, the apparatus includes a gas supply unit that introduces a gas into a processing chamber, a substrate mounting table on which a substrate is mounted, and a high-frequency power supply unit that supplies high-frequency power. A substrate processing apparatus that performs a predetermined process on the substrate by using plasma generated by high-frequency power supplied by a power supply means, wherein the substrate is processed when the substrate is generated by generating plasma. Storage means for accumulating and storing self-bias voltage data generated on the mounting table for a predetermined time; change amount calculating means for obtaining a change amount of the self-bias voltage from the self-bias voltage data stored in the storage means; and Determination means for determining whether the self-bias voltage is stable depending on whether or not the change amount calculated by the change amount calculation means is smaller than a preset allowable amount. The substrate processing apparatus is provided.

  Preferably, the predetermined time is a time until the storage means (data buffer) for storing the self-bias voltage detected every sampling time is filled with the self-bias voltage data.

  Preferably, when the amount of change in the self-bias voltage after the predetermined time has elapsed is greater than a predetermined allowable amount, an abnormality in the self-bias voltage is notified.

  Preferably, the storage unit further includes two or more storage units in the storage unit, and when at least two of the storage units are filled with the self-bias voltage data, the change in the self-bias voltage is achieved. A self-bias voltage reference value is obtained based on the quantity.

  Preferably, the amount of change is a difference between average values of the self-bias voltage data.

  Preferably, the predetermined time is a time until the storage means (data buffer) for storing the self-bias voltage detected every sampling time is filled with two or more data of the self-bias voltage.

  Preferably, the plasma processing is started, and after the incident wave power is stabilized, the sampling is started.

  According to another aspect of the present invention, a processing chamber for processing a substrate, a gas supply means for introducing gas into the processing chamber, a substrate mounting table provided in the processing chamber on which a substrate is mounted, and a substrate A high-frequency power supply means for supplying high-frequency power for generating a plasma for performing a predetermined process on the processing chamber, and a value when the self-bias voltage generated in the substrate mounting table is stable. There is provided a substrate processing apparatus comprising: a comparison unit that compares a self-bias voltage reference value with a preset allowable amount; and a determination unit that determines an abnormality of the self-bias voltage based on the comparison by the comparison unit. The

  According to still another aspect of the present invention, a gas introducing means, a vacuum container in which an exhaust means and a high frequency power supply means are connected, a plasma generating means for generating plasma by high frequency power in the vacuum container, and a plasma treatment A setting means for setting a self-bias voltage reference value to be a reference for monitoring, a storage means for storing at least a self-bias voltage reference value set by the setting means, and a self-voltage bias stored in the storage means A comparison unit that compares a reference value with a preset allowable value, a determination unit that determines an abnormality based on a comparison by the comparison unit, and an abnormality is determined when the determination unit determines an abnormality. There is provided a semiconductor manufacturing apparatus having notification means for notification.

  INDUSTRIAL APPLICABILITY The present invention can be used in a substrate processing apparatus for processing a substrate or the like in a substrate processing apparatus for processing a semiconductor wafer, a glass substrate, or the like, using plasma generated by high frequency power.

1 is a schematic configuration diagram of a substrate processing apparatus according to an embodiment of the present invention. It is a block diagram which shows the structure of the controller for control for controlling the substrate processing apparatus which concerns on embodiment of this invention. It is sectional drawing which shows the structure of the processing furnace used for embodiment of this invention. It is a graph explaining the method of monitoring the self-bias voltage of the substrate processing apparatus which concerns on embodiment of this invention, and determining whether the self-bias voltage is stable. It is a flowchart which shows the whole flow which monitors the self-bias voltage of the substrate processing apparatus which concerns on embodiment of this invention. It is a flowchart which shows the detail of the flow of the process which monitors whether the self-bias voltage of the substrate processing apparatus which concerns on embodiment of this invention is stabilized, and determines. It is explanatory drawing which shows the data buffer structure used with the substrate processing apparatus which concerns on embodiment of this invention. It is explanatory drawing which shows the structure which connected two data buffers used with the substrate processing apparatus which concerns on embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor manufacturing apparatus 100 Plasma CVD processing apparatus 102 Processing chamber 116 Pressure sensor 118 Controller 120 Anode electrode 128 Gas introduction line 130 Cathode electrode 132 High frequency oscillator 138 Voltmeter 142 Storage means W Wafer

Claims (1)

Gas supply means for introducing gas into the processing chamber;
A substrate mounting table for mounting the substrate;
High-frequency power supply means for supplying high-frequency power;
Have
A substrate processing apparatus for performing a predetermined process on the substrate using plasma generated by the high frequency power supplied by the high frequency power supply means,
Storage means for accumulating and storing data of a self-bias voltage generated on the substrate mounting table for a predetermined time when processing the substrate by generating plasma.
A change amount calculating means for obtaining a change amount of the self-bias voltage from the self-bias voltage data stored in the storage means;
Determining means for determining whether the self-bias voltage is stable depending on whether or not the change amount calculated by the change amount calculating means is smaller than a preset allowable amount;
A substrate processing apparatus.

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