JP2009090377A - Wire saw device for manufacturing silicon carbide substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent machining accuracy in cutting an ingot from worsening in a SiC ingot cutting wire saw device capable of supplying slurry in a return mode. <P>SOLUTION: An impurities remover 50 comprising a magnet 51, a resin cover 52 and a support rod 53 is provided on one or both sides of an ingot 4. Such a constitution can remove impurities included in the slurry 40, that is abrasion chips of a wire 2, by the impurities remover 50 in cutting the ingot 4 by a wire array 20. Thus, the impurities included in the slurry 40 can be reduced, and the machining accuracy in cutting the ingot 4 can be prevented from worsening. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an SiC ingot cutting wire saw device for manufacturing a SiC substrate by cutting an ingot of silicon carbide (hereinafter referred to as SiC) while moving a stretched wire.

Conventionally, when a SiC substrate is manufactured by cutting a SiC single crystal ingot, for example, a wire saw device is used as disclosed in Patent Document 1. Specifically, the wire saw device constitutes a wire row in which the wire is stretched in a plurality of rows by winding the wire a plurality of times around a plurality of rollers, and the wire row is reciprocated at high speed by the rotation of the rollers. At the same time, by applying a slurry in which diamond abrasive grains are mixed with the wire, a plurality of SiC substrates are manufactured with a wire array pressed against an SiC single crystal ingot.
JP 60-172460 A

  In the wire saw apparatus as described above, slurry is supplied to the wire row on one side or both sides of an SiC single crystal ingot cut by a wire. At this time, it is possible to always supply new slurry from the slurry supply device, but this is not preferable because the amount of slurry required becomes large. For this reason, a return method is adopted in which the slurry supplied from the slurry supply device is collected in a slurry tank and reused.

  However, as the cutting progresses, wire wire wear powder composed of magnetic metal material becomes impurities and is mixed into the slurry, so the processing accuracy when cutting the ingot in proportion to the increase in impurities deteriorates. There is a problem of doing.

  In view of the above points, an object of the present invention is to suppress deterioration of processing accuracy when cutting an ingot in a SiC ingot cutting wire saw device that supplies slurry by a return method.

  In order to achieve the above object, in the present invention, at least two rollers (11, 12) that can rotate and a wire (between the two rollers (11, 12) are wound around the rollers (11, 12) ( 2) A wire array (20) configured by being stretched and a slurry (40) containing abrasive grains are supplied to the wire array (20) and supplied to the wire array (20). A slurry supply device (41) for supplying the slurry (40) by a return method in which the slurry (40) is recovered and supplied again to the wire row (20), and two rollers (11 , 12), while the wire (2) disposed between the silicon carbide ingot (4) is pressed against the silicon carbide ingot (4), the wire (2) travels based on the rotation of the rollers (11, 12), and the slurry supply device (41 Of the wire (2) attached to the wire row (20) by supplying the slurry (40) to the wire (2) by cutting the ingot (4) into a substrate with the wire (2). An impurity remover (50) having a magnet (51) that attracts impurities (60) composed of wear powder is provided.

  According to such a configuration, when the ingot (4) is cut by the wire row (20), impurities contained in the slurry (40), that is, the wear powder of the wire (2) is removed by the impurity remover (50). It can be removed. For this reason, it becomes possible to reduce the impurity contained in a slurry (40), and it becomes possible to suppress the deterioration of the processing precision at the time of cut | disconnecting an ingot (4).

  In this case, the arrangement of the impurity remover (50) is preferably near the supply nozzle (41a) because the impurities contained in the slurry (40) supplied from the nozzle are preferably removed before reaching the cutting point of the ingot. It is good to place in. Furthermore, the ingot side of the supply nozzle (41a) is good.

  Moreover, since the impurity removal capability will fall if there is much quantity of the impurity (60) adhering to the impurity remover (50), it is preferable to put the situation in the position where it is easy to confirm visually. For this reason, when the supply nozzle (41a) is arrange | positioned under the wire row | line (20), it is preferable to arrange | position an impurity removal device (50) above a wire row | line (20). In this way, the wire remover (50) can be prevented from being hidden by the wire row (20), and the impurities (60) attached to the impurity remover (50) can be visually confirmed. . And if there is much quantity of the impurity (60) adhering to the impurity remover (50), since an impurity removal capability will fall, once a cutting process is interrupted and the impurity (60) is removed from the impurity remover (50) If the cutting process is restarted again, it is possible to suppress deterioration in processing accuracy when cutting the ingot (4).

  For example, the impurity remover (50) includes a magnet (51) and a cover made of a nonmagnetic material that is arranged so as to cover the magnet (51) and is detachable from the magnet (51). (52) is preferable.

  In this way, after the cutting of the ingot (4) is completed or in the middle thereof, by removing the cover (52) from the magnet (51), the attractive force of the magnet (51) does not act from the impurities (60), so it is easy. Impurities attached to the resin cover (52) can be removed.

  In this case, for example, the magnet (51) can have a columnar shape and the cover (52) can have a cylindrical shape.

  Such an impurity remover (50) may be disposed only on one side of the ingot (4). However, if at least one impurity remover (50) is disposed on both sides of the ingot (4), more impurities ( 60) can be improved.

  In addition, the code | symbol in the bracket | parenthesis of each said means shows the correspondence with the specific means as described in embodiment mentioned later.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
A first embodiment of the present invention will be described. FIG. 1 is a schematic perspective view of a wire saw device 1 according to the present embodiment. FIG. 2 is a schematic front view of the wire saw device 1 shown in FIG. The wire saw device 1 is arranged so that the vertical direction of the drawing in FIGS. 1 and 2 corresponds to the vertical direction. Hereinafter, with reference to FIG. 1 and FIG. 2, the wire saw apparatus 1 of this embodiment is demonstrated.

  As shown in FIGS. 1 and 2, a wire 2 such as a piano wire made of a single magnetic metal material is attached to three grooved rollers (hereinafter simply referred to as rollers) 11 to 13 arranged in a triangular shape. It is wound in a spiral shape, and a wire row 20 arranged in a plurality of rows is formed between two rollers 11 and 12 of the three rollers 11 to 13. The SiC single crystal ingot 4 for substrate formation is cut by this wire row 20, and during cutting of the ingot 4, the right side of the paper is the supply side of the wire 2, and the left side of the paper is the recovery side of the wire 2. New lines are always supplied in consideration of the amount of wear.

  The remaining one of the three rollers 11 to 13 is rotated by the motor 3, and the wire 2 is reciprocated at a high speed by rotating the roller 12. That is, of the three rollers 11 to 13, the two rollers 11 and 12 positioned on both sides of the wire row 20 are rotatable about the central axes of the support shafts 31 and 32 of the rollers 11 and 12. When the roller 13 is rotated by the motor 3, the rollers 11 and 12 are also rotated in accordance with the travel of the wire 2.

  A pedestal 5 for arranging the ingot 4 is provided below the wire row 20, and the ingot 4 is fixed to the pedestal 5 via an adhesive member (not shown). The ingot 4 is cut.

  And the slurry supply apparatus 41 for supplying the slurry 40 which mixed the diamond abrasive grain is provided, the supply nozzle 41a of the slurry supply apparatus 41 is arrange | positioned at the both sides of the ingot 4, and a slurry is provided from the downward direction of the wire row | line 20. 40 can be supplied. The slurry supply device 41 includes a slurry tank that collects the slurry 40 dripping from the wire row 20 or the ingot 4 after supplying the slurry 40 to the wire row 20. It is a return type that is reused and supplied to the wire row 20 again.

  Furthermore, in this embodiment, as shown in FIG. 2, an impurity remover 50 is provided between the supply nozzle 41 a of the slurry supply device 41 and the ingot 4 in a state where it can be detached from the wire saw device 1. The impurity remover 50 includes a columnar magnet 51, a cylindrical resin cover 52 that covers the outer peripheral surface of the magnet 51, and a support bar 53 (see FIG. 3 described later) that supports the magnet 51. ing. The impurity remover 50 is arranged so that the axial direction of the magnet 51 is the arrangement direction of the wire row 20 (perpendicular to the operation direction of the wire 2), and the impurity remover 50 is a wire constituting the wire row 20. It is arranged so as to face all two.

  With such a configuration, the impurities contained in the slurry 40 can be removed from the slurry 40 based on the magnetic force (attraction) of the magnet 51. The inner diameter of the resin cover 52 is substantially the same as the outer diameter of the magnet 51, and the thickness of the resin cover 52 is thin enough that the magnetic force of the magnet 51 sufficiently acts on impurities contained in the slurry 40. The resin cover 52 is detachable from the magnet 51. When the resin cover 52 is removed from the magnet 51 after the cutting of the ingot 4 is completed, the resin cover 52 is attached to the resin cover 52 by utilizing the fact that the attractive force of the magnet 51 does not act on impurities. Impurities can be easily removed. The resin cover 52 may be in contact with the wire row 20 or may be disposed slightly apart. In order to adjust the position of the wire for this purpose, a moving mechanism is provided. Moreover, when arrange | positioning so that the resin cover 52 may contact | connect, it is preferable if the magnet 51 and the resin cover 52 become rotatable centering on the support rod 53 so that sliding of the wire row | line 20 may be performed smoothly.

  Moreover, when arrange | positioning so that the resin cover 52 may contact | connect, it is necessary to adjust the position of the resin cover 52 and a wire taking into consideration that a wire bends by progress of a cutting | disconnection. It is advisable to provide a tension mechanism that can be freely adjusted with a degree of freedom against this deflection.

  Using the wire saw device 1 for cutting such SiC single crystal ingot, the base 5 is moved in the direction of the arrow K while supplying the slurry 40 to the wire row 20 while running the wire 2, and the wire 5 The row 20 and the ingot 4 are pressed against each other to form a deep cut groove. An SiC single crystal substrate having a thickness of, for example, about 1.0 mm or less can be manufactured from the ingot 4 by cutting the ingot 4 by the diameter.

  According to the wire saw device 1 for cutting a SiC single crystal ingot described above, when the ingot 4 is cut by the wire row 20, the impurities contained in the slurry 40, that is, the wear powder of the wire 2 is removed by the impurity remover 50. It can be removed. For this reason, it becomes possible to reduce the impurity contained in the slurry 40, and it becomes possible to suppress the deterioration of the processing accuracy at the time of cutting the ingot 4. Moreover, it can also suppress that the viscosity of a slurry increases by reducing an impurity.

  In the present embodiment, the impurity remover 50 is arranged above the wire row 20. Therefore, for example, as shown in the enlarged view in the vicinity of the impurity remover 50 shown in FIG. 3, the impurity remover 50 can be prevented from being hidden by the wire row 20, and the impurity 60 attached to the impurity remover 50 can be prevented. Can also be confirmed visually. If the amount of the impurity 60 adhering to the impurity remover 50 is large, the impurity removing ability is lowered. Therefore, the cutting process is temporarily interrupted, the impurity 60 is removed from the impurity remover 50, and then the cutting process is resumed. If it makes it, it will become possible to suppress the deterioration of the processing precision at the time of cutting the ingot 4 more.

(Other embodiments)
In the above embodiment, the impurity remover 50 is disposed above the wire row 20, but may be disposed below the wire row 20. However, in order to visually confirm adhesion of impurities, it is preferable to dispose the impurity remover 50 above the wire row 20.

  In the above embodiment, the two supply nozzles 41a of the slurry supply device 41 are arranged on both sides of the ingot 4, and the impurity remover 50 is arranged corresponding to the supply nozzles 41a. However, if one impurity remover 50 is arranged at least on each side of the ingot 4, it is possible to further improve the ability to remove the impurities 60. Of course, it is possible to arrange more than two impurity removers 50.

  Although the case where the three rollers 11 to 13 are used has been described in the above embodiment, the number of rollers is merely an example, and more rollers may be used.

  In the above embodiment, the ingot 4 mounted on the pedestal 5 is moved toward the wire row 20 so that the ingot 4 is pressed by the wire row 20, but the ingot 4 is relative to the wire row 20. The wire row 20 side may be moved.

It is a typical perspective view of the wire saw apparatus 1 concerning 1st Embodiment of this invention. It is a typical front view of the wire saw apparatus 1 shown in FIG. It is the enlarged view which showed the mode of the vicinity of the impurity removal device 50 in the cutting process of the ingot 4 of a SiC single crystal.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Wire saw apparatus 1, 2 ... Wire, 3 ... Motor, 4 ... Ingot, 4a ... Cutting groove, 5 ... Base, 11-13 ... Roller, 11a, 12a ... Groove, 20 ... Wire row, 31, 32 ... Support Shaft, 40 ... slurry, 41 ... slurry supply device, 41a ... supply nozzle, 50 ... impurity remover, 51 ... magnet, 52 ... resin cover, 53 ... support rod

Claims (7)

At least two rollers (11, 12) rotatable;
A wire array (20) formed by winding the wire (2) between the two rollers (11, 12) wound around the rollers (11, 12);
The slurry (40) containing abrasive grains is supplied to the wire row (20), and the slurry (40) supplied to the wire row (20) is collected, and the wire row (20) is collected. A slurry supply device (41) for supplying the slurry (40) by a return method for re-use of supplying again,
The wire (2) based on the rotation of the roller (11, 12) with the wire (2) disposed between the two rollers (11, 12) pressed against the silicon carbide ingot (4). ) And supplying the slurry (40) to the wire (2) by the slurry supply device (41), thereby forming the ingot (4) into a substrate shape by the wire (2). In a wire saw device for manufacturing a silicon carbide substrate to be cut,
Carbonization characterized by comprising an impurity remover (50) having a magnet (51) that attracts impurities (60) composed of abrasion powder of the wire (2) adhering to the wire row (20). Wire saw device for manufacturing silicon substrates. The wire saw device for manufacturing a silicon carbide substrate according to claim 1, wherein the impurity remover (50) is disposed between the slurry supply device (41) and the ingot (4). The wire saw device for manufacturing a silicon carbide substrate according to claim 1 or 2, wherein the impurity remover (50) is disposed above the wire row (20). The impurity remover (50) includes the magnet (51) and a cover made of a non-magnetic material that is arranged so as to cover the magnet (51) and is detachable from the magnet (51). (52), The wire saw apparatus for silicon carbide substrate manufacture as described in any one of Claim 1 thru | or 3 characterized by the above-mentioned. The wire saw device for manufacturing a silicon carbide substrate according to claim 4, wherein the magnet (51) has a columnar shape and the cover (52) has a cylindrical shape. The wire for manufacturing a silicon carbide substrate according to any one of claims 1 to 5, wherein at least one impurity remover (50) is disposed on each side of the ingot (4). Saw equipment. The said impurity remover (50) is arrange | positioned so that all the said wires (2) which comprise the said wire row | line | column (20) may be opposed, The one of Claim 1 thru | or 6 characterized by the above-mentioned. A wire saw device for manufacturing the silicon carbide substrate as described.

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