JP2009064954A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

An object of the present invention is to provide a semiconductor device and a method of manufacturing the same that can prevent a disconnection due to a step in a wiring connecting a MEMS device and a semiconductor device as much as possible, and at a low manufacturing cost. To do.
SOLUTION: A first chip 1 including a MEMS device 2 having a hollow structure inside and having a first pad 5 formed on an upper surface thereof electrically connected to the MEMS device; and a semiconductor device including the semiconductor device therein; Second chips 10A and 10B having second pads 11 and 12 that are electrically connected to each other formed on the upper surface; an adhesive portion 25 that bonds the side surface of the first chip and the side surface of the second chip; An insulating film 20 covering the upper surface of the two chips and the upper surface of the bonding portion, the upper surface being substantially flat and having contact holes connected to the first and second pads, formed on the insulating film; And a wiring 40 connected to the first and second pads, and the insulating film seals the MEMS device.
[Selection] Figure 1

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof.

  2. Description of the Related Art In recent years, high integration technology has progressed in semiconductor devices, and the integration technology of elements constituting the semiconductor device is also required to have high density. In particular, recent high integration technologies for semiconductor devices include integration technologies for high-performance semiconductor devices (hereinafter also referred to as semiconductor devices) as well as electromechanical devices (hereinafter also referred to as MEMS (Micro Electro Mechanical System) devices). Integration technology is needed.

  MEMS is a general term for microscopic structures manufactured using a silicon microfabrication process. This MEMS is expected to be applied in a wide range of electronic component fields such as pressure sensors, acceleration sensors, and RF filters. As a technique for integrating a MEMS device having such a MEMS structure and a semiconductor device, there is a high-density three-dimensional mounting technique in which each semiconductor device and the MEMS device are stacked. However, this mounting technique has a high process cost because it is necessary to form vertical through holes in the chip on which the semiconductor device is formed and the chip on which the MEM device is formed. For this reason, a technique for highly integrating on the same plane has been required.

  As a technique for high integration on the same plane, there are typically known two systems: SOC (System on Chip) and SIP (System in Package). The SOC is a technology for integrating a plurality of devices by forming them on one chip. Although this SOC can increase the degree of device integration, there is a problem that there is a limit to devices that can be integrated. For example, it is difficult to form a device made of another crystal system such as GaAs on a Si substrate due to process differences. In addition, there is a problem that the design period for realizing a new device is long and the development cost is high.

  In contrast, SIP is a technology in which each LSI chip is individually formed and then individually mounted on an integrated substrate. In this SIP, since each device can be formed individually, there is no restriction on the devices to be integrated. In addition, when a new system is realized, the existing chip can be used, so that the design period can be shortened and the development cost can be reduced. However, since the element integration density depends on the integrated substrate on which each device is mounted, there is a problem that it is difficult to increase the device arrangement density due to the limitation of the wiring design on the integrated substrate.

  Furthermore, when integrating a MEMS device as a semiconductor device, it is necessary to seal the hollow structure due to the characteristics of the MEMS device. In general, a hollow package using a ceramic package is often used for sealing, but research and development of a wafer level package using a silicon wafer as a sealing material is also being conducted. However, in these methods, the sealing thickness of the mechanical structure region of the MEMS device is increased, and there is a problem that the entire package of the MEMS device cannot be thinned.

For this reason, each semiconductor device and MEMS device completed with their own manufacturing technology is inspected and sorted into individual chips by dicing, and then they are adjacently rearranged at the chip level to be reconstructed as an integrated wafer of MEMS devices. Technology (pseudo SOC technology) has been proposed (see, for example, Non-Patent Document 1). This pseudo SOC technology enables the integration of different types of devices with different device manufacturing technologies, and reduces the manufacturing cost by reintegrating only the operation devices that have been inspected and selected in a large area. Further, the semiconductor device and the MEMS device mounted on the reconstructed wafer are electrically connected by a fine wiring layer. According to this technology, it is possible to realize high integration that cannot be achieved by conventional SIP and complexization that cannot be achieved by SOC in a short period of time.
Micromachine Center Homepage: Highly Integrated / Complex MEMS Manufacturing Technology Development Project (Research and Development of Highly Integrated MEMS Pseudo-SOC Manufacturing Technology)

  As described above, the pseudo SOC technology in which the semiconductor device and the MEMS device are rearranged at the chip level and reconstructed as an integrated wafer of the MEMS device is a high integration that cannot be achieved by conventional SIP and a complex that cannot be achieved by SOC. Can be realized in a short period of time.

  However, this pseudo SOC technology has a problem that a fine wiring that connects different devices of a semiconductor device and a MEMS device is disconnected due to a step at a contact surface with an organic resin. This is attributed to a mounting pressure difference when the semiconductor device and the MEMS device are mounted on the integrated transfer substrate, and due to curing shrinkage of the epoxy resin that fixes the back surface of the semiconductor device and the MEMS device.

  Further, the curing shrinkage of the epoxy resin has caused a positional shift when the semiconductor device and the MEMS device are reconstructed at the wafer level. Specifically, the wafer level misalignment due to the curing shrinkage of the epoxy resin may not be an important issue in the chip level manufacturing. Due to the positional deviation, the reconstructed wafer cannot be constructed.

  Further, in the pseudo SOC technology, it is necessary to individually arrange a cap for a MEMS device that seals a movable region of the MEMS device on a reconstructed wafer manufactured at a wafer level, so that the semiconductor device and the MEMS device are integrated. In addition to being a factor limiting the thinning of the semiconductor device, there is a problem that the process cost increases due to the arrangement of the individual caps.

  The present invention has been made in consideration of the above circumstances, and even when the MEMS device and the semiconductor device are provided, it is possible to cause disconnection due to a step in the wiring connecting the MEMS device and the semiconductor device. It is an object of the present invention to provide a semiconductor device and a method for manufacturing the same that can be prevented at the same time.

  A semiconductor device according to a first aspect of the present invention includes a first chip that includes a MEMS device having a hollow structure inside, a first pad that is electrically connected to the MEMS device formed on an upper surface thereof, and a semiconductor device inside the semiconductor device. A second chip having a second pad electrically connected to the semiconductor device formed on an upper surface thereof; an adhesive portion that bonds a side surface of the first chip and a side surface of the second chip; An insulating film covering the upper surface of the first and second chips and the upper surface of the bonding portion, the upper surface being substantially flat and having contact holes connected to the first and second pads; And a wiring connected to the first and second pads, wherein the insulating film seals the MEMS device.

  According to a second aspect of the present invention, there is provided a method of manufacturing a semiconductor device, wherein a contact hole pattern is formed on a first surface of a transparent substrate, and a photosensitive insulation is formed on a second surface opposite to the first surface. A step of forming a film, a MEMS device having a hollow structure formed therein, a first chip having a first pad electrically connected to the MEMS device formed on an upper surface, and a semiconductor device formed therein, A second chip having a second pad electrically connected to the semiconductor device formed on an upper surface thereof, and the upper surfaces of the first and second chips are in contact with the photosensitive insulating film of the transparent substrate; A step of mounting, a step of embedding a gap between a side surface of the MEMS device and a side surface of the semiconductor device opposed to the side surface with an adhesive portion; Irradiating light from the second surface side of the substrate to expose the photosensitive insulating film; peeling the transparent substrate from the photosensitive insulating film; developing the photosensitive insulating film; Forming a contact hole connected to the first and second pads in the insulating film; and forming a wiring connecting to the first and second pads on the photosensitive insulating film. It is characterized by being.

  According to the present invention, even when the semiconductor device includes the MEMS device and the semiconductor device, it is possible to prevent disconnection due to a step in the wiring connecting the MEMS device and the semiconductor device as much as possible. It is possible to provide a semiconductor device with a low manufacturing cost and a manufacturing method thereof.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  A semiconductor device according to an embodiment of the present invention is shown in FIG. FIG. 1 is a cross-sectional view of the semiconductor device of this embodiment. The semiconductor device of this embodiment includes a MEMS chip 1 in which a MEMS device 2 having a hollow structure is formed, a first semiconductor chip 10A in which a first semiconductor device (not shown) is formed, and a second semiconductor device (see FIG. And a second semiconductor device 10B on which is formed). The side surface of the MEMS chip 1 and the side surface of the first semiconductor chip 10A are bonded to each other by the bonding portion 25 made of, for example, epoxy resin, and the side surface of the MEMS chip 1 opposite to the side surface to which the first semiconductor chip 10A is bonded is 2 The side surfaces of the semiconductor chip are bonded by the bonding portion 25. The bonding portion 25 is also formed on the back surface of the MEMS chip 1, the back surface of the first semiconductor chip 10A, and the back surface of the second semiconductor chip 10B.

  On the main surface of the MEMS chip 1, a protective film 3 provided with an opening 3a for forming the MEMS device 2 having a hollow structure is formed. The opening 3 a is a hole for removing a sacrificial layer (not shown) that is used when forming the MEMS device 2 having a hollow structure and embedded in the movable region 4 of the MEMS device 2. Further, an external connection terminal (pad) 5 for electrically connecting to the MEMS device and a thin film 7 covering the opening 3a to prevent entry into the movable region 4 are formed on the protective film 3. Has been. On the other hand, external connection terminals (pads) 11 and 12 for electrical connection with the MEMS chip 1 are provided on the main surfaces of the first semiconductor chip 10A and the second semiconductor chip 10B, respectively.

  In the present embodiment, the pads 5 of the MEMS chip 1 and the upper surfaces of the pads 11 and 12 of the first and second semiconductor chips 10A and 10B are substantially located on the same plane. An insulating film 20 made of a photosensitive resin is formed so as to cover the main surfaces of the MEMS chip 1 and the first and second semiconductor chips 10A and 10B. Therefore, the upper surfaces of the insulating films 20 covering the main surfaces of the MEMS chip 1 and the first and second semiconductor chips 10A and 10B are substantially on the same plane and are substantially flat. The insulating film 20 has a structure in which the movable region 4 of the MEMS device 2 is sealed.

  The insulating film 20 is provided with contact holes for making contact with the pads 5 of the MEMS chip 1 and the pads 11 and 12 of the first and second semiconductor chips 10A and 10B. A fine wiring 40 is formed to cover the bottom and side surfaces. These fine wiring lines 40 extend to the upper surface of the insulating film 20 to electrically connect the MEMS chip 1 and the first semiconductor chip 10A, or to electrically connect the MEMS chip 1 and the second semiconductor chip 10B. Or the first and second semiconductor chips are electrically connected. The upper surface of the insulating film 25 that bonds the side surface of the MEMS chip 1 and the side surface of the first semiconductor chip 10A and the insulating film 25 that bonds the side surface of the MEMS chip 1 and the side surface of the second semiconductor chip 10B are substantially the same. A flat insulating film 20 is formed. For this reason, the fine wiring 40 does not cause disconnection due to a step.

  Further, an interlayer insulating film 44 is formed so as to cover these fine wirings 40, and contact holes for making contact with the fine wirings 40 are provided in the interlayer insulating film 44. Each of these contact holes is formed with an I / O electrode 46 that covers the bottom surface and the side surface and extends to the top surface of the interlayer insulating film 44.

Next, a method for manufacturing the semiconductor device of this embodiment will be described with reference to FIGS.
First, as shown in FIG. 2, the MEMS chip 1 has a hollow MEMS device 2, a protective film 3 provided with an opening 3 a, and an electrical connection with the MEMS device 2 provided on the protective film 3. The pad 5 is formed. Subsequently, as shown in FIG. 3, a thin film 7 covering the opening 3 a is formed on the protective film 3 of the MEMS chip 1.

  Next, as shown in FIG. 4, the insulating film 20 made of a photosensitive resin is formed on the surface of the integrated transfer substrate 50 made of glass on which the contact hole pattern 52 made of, for example, metal is formed on the back surface. On the insulating film 20, the MEMS chip 1, the first semiconductor chip 10A, and the second semiconductor chip 10B are attached and mounted (see FIG. 5). At this time, each main surface of the MEMS chip 1 and the first and second semiconductor chips 10A and 10B faces the insulating film 20. The contact hole pattern 52 is formed at a position corresponding to the pads 5, 11, 12 of the MEMS chip 1, the first and second semiconductor chips 10A, 10B.

Next, as shown in FIG. 6, the back surface and side surfaces of the MEMS chip 1 and the first and second semiconductor chips 10 </ b> A and 10 </ b> B are sealed with, for example, an epoxy resin 25. For sealing the epoxy resin 25, it is preferable to use a vacuum printing technique for printing in a vacuum atmosphere. Thereafter, the epoxy resin 25 is cured, and the side surface of the MEMS chip 1 and the side surface of the first semiconductor chip 10A are bonded together, and the side surface of the MEMS chip 1 and the side surface of the second semiconductor chip 10B are bonded. Next, as shown in FIG. 7, the insulating film 20 made of a photosensitive resin is exposed by irradiating light 30 from the surface side of the integrated transfer substrate 50 on which the contact hole pattern 52 is formed. The exposure is performed according to the sensitivity of the photosensitive resin to be the insulating film 20. Specifically, when polyimide (Toray: UR3140) is used as the photosensitive resin, the exposure is preferably about 100 mJ / cm ² .

  Next, as shown in FIG. 8, after the integrated transfer substrate 50 is peeled off, the insulating film 20 is developed using a developer (for example, Toray: DV-505). Therefore, the cured adhesive layer 25 made of an epoxy resin becomes a support substrate for the MEMS chip 1 and the first and second semiconductor chips 10A and 10B. Then, the opening 21 is selectively formed at a position corresponding to the external connection terminal pattern 52 of the insulating film 20. The surfaces of the pads 5, 11, 12 of the MEMS chip 1, the first and second semiconductor chips 10A, 10B are exposed at the bottoms of these openings 21.

  Next, as shown in FIG. 9, the MEMS chip 1 and the first and second semiconductor chips 10 </ b> A and 10 </ b> B bonded as described above are turned upside down, and the MEMS chip 1, A fine wiring 40 made of metal is formed on the insulating films 20 of the first and second semiconductor chips 10A and 10B. At this time, a part of the fine wiring 40 is formed so as to cover the bottom surface and the side surface of the opening 21 provided in the insulating film 20, and the other is formed on the MEMS device 2 formed on the MEMS chip 1 and the first semiconductor chip 10A. The formed semiconductor device is electrically connected, or the MEMS device and the semiconductor device formed on the second semiconductor chip 10B are electrically connected.

  Next, as shown in FIG. 11, an interlayer insulating film 44 is formed so as to cover the fine wiring 40, and then a contact hole 44 a for making contact with the fine wiring 40 is opened in the interlayer insulating film 44. Subsequently, as shown in FIG. 12, an I / O electrode 46 is formed so as to fill the opening 44a, thereby completing the semiconductor device.

In the semiconductor device of this embodiment formed in this way, the openings 21 corresponding to the external connection terminals (pads) 5, 11, 12 of the MEMS chip 1, the first and second semiconductor chips 10A, 10B are Since the alignment pattern formed on the integrated substrate is used to form the insulating film 20, the external connection terminals (pads) 5, 11 of the MEMS chip 1, the first and second semiconductor chips 10 </ b> A, 10 </ b> B, 12, it is not necessary to perform alignment again, and as much as possible misalignment with respect to the design values of the MEMS chip 1 and the first and second semiconductor chips 10A and 10B due to curing shrinkage of the epoxy resin. In addition, as the thin film 7, a metal containing at least one element of W, Ti, Cu, Cr, and Ni, or polysilicon is used. It is done.

  As the fine wiring 40, a metal containing at least one element of Ti, Ni, Al, Cu, Au, Pb, Sn, Pd, and W, or an alloy thereof is used.

  In the present embodiment, polyimide is used as the insulating film 20, but photosensitive BCB can also be used, and photosensitive epoxy resin and photosensitive novolac resin can also be used. Furthermore, the resin bonded to the first and second semiconductor devices 10A and 10B and the MEMS chip 1 is not limited to the epoxy resin.

  As described above, according to the present embodiment, since different devices between the semiconductor device and the MEMS device are flattened together with the insulating film, the fine wiring 40 is bonded to the bonding portion, or the semiconductor chip or the MEMS chip. Can be prevented, and disconnection due to a step can be prevented.

  Further, the semiconductor chip and the MEMS chip use the epoxy resin 25 as a supporting substrate, and the insulating film 20 corresponding to the external connection terminal on the semiconductor chip and the MEMS chip is exposed and opened before the epoxy resin 25 is cured. Therefore, the position shift at the wafer level accompanying the curing shrinkage of the epoxy resin 25 can be easily eliminated.

  In addition, since the movable region 4 of the MEMS device 2 is collectively sealed by the photosensitive organic resin 20, it is not necessary to individually seal the movable region of the MEMS device as in the conventional case, and at a low manufacturing cost, A semiconductor device including a MEMS device and a semiconductor device can be manufactured.

  In the semiconductor device of this embodiment, the opening 3a of the MEMS chip 1 was covered with the thin film 7. However, as a modification of this embodiment, as shown in FIG. 13, a MEMS chip 1A in which the opening 3a is not covered with a thin film may be used. A cross section of the semiconductor device of this modification is shown in FIG. In this modification, the lower surface of the insulating film 20 on the MEMS chip 1A and the lower surfaces of the insulating films 20 on the first and second semiconductor chips 10A and 10B are not located on the same plane. In the above embodiment, the lower surface of the insulating film 20 on the MEMS chip 1A and the lower surfaces of the insulating film 20 on the first and second semiconductor chips 10A and 10B are located on the same plane. This modification is particularly effective when a gyro sensor or the like that does not require a high vacuum atmosphere is not mounted because the process can be reduced in cost.

1 is a cross-sectional view illustrating a semiconductor device according to an embodiment of the present invention. Sectional drawing which shows the manufacturing process of the semiconductor device of one Embodiment. Sectional drawing which shows the manufacturing process of the semiconductor device of one Embodiment. Sectional drawing which shows the manufacturing process of the semiconductor device of one Embodiment. Sectional drawing which shows the manufacturing process of the semiconductor device of one Embodiment. Sectional drawing which shows the manufacturing process of the semiconductor device of one Embodiment. Sectional drawing which shows the manufacturing process of the semiconductor device of one Embodiment. Sectional drawing which shows the manufacturing process of the semiconductor device of one Embodiment. Sectional drawing which shows the manufacturing process of the semiconductor device of one Embodiment. Sectional drawing which shows the manufacturing process of the semiconductor device of one Embodiment. Sectional drawing which shows the manufacturing process of the semiconductor device of one Embodiment. Sectional drawing which shows the manufacturing process of the semiconductor device of one Embodiment. Sectional drawing of the MEMS device used for the semiconductor device by the modification of one Embodiment. Sectional drawing of the semiconductor device by the modification of one Embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 MEMS chip 2 MEMS device 3 Protective film 3a Opening hole 4 Movable area 5 External connection terminal (pad)
7 Thin film 10A First semiconductor chip 10B Second semiconductor chip 11 External connection terminal (pad) of first semiconductor chip
12 External connection terminals (pads) of the second semiconductor chip
20 Photosensitive insulating film 30 Light 40 Fine wiring 44 Interlayer insulating film 46 I / O electrode 50 Integrated transfer substrate 52 Terminal pattern for external connection

Claims (8)

A first chip including a MEMS device having a hollow structure therein and having a first pad electrically connected to the MEMS device formed on an upper surface of the MEMS device;
A second chip including a semiconductor device therein and a second pad electrically connected to the semiconductor device formed on an upper surface of the semiconductor device;
An adhesive portion for adhering a side surface of the first chip and a side surface of the second chip;
An insulating film that covers the upper surfaces of the first and second chips and the upper surface of the bonding portion, the upper surface is substantially flat, and contact holes connected to the first and second pads are opened;
A wiring formed on the insulating film and connected to the first and second pads;
With
The semiconductor device, wherein the insulating film seals the MEMS device.   The first chip is formed with a movable region of the MEMS device and a protective film provided with an opening used when forming the MEMS device on the movable region. The semiconductor device according to claim 1, wherein the semiconductor device is formed on the protective film.   The semiconductor device according to claim 2, wherein a film covering the opening is formed between the protective film and the insulating film.   The semiconductor device according to claim 1, wherein the insulating film is a photosensitive organic resin.   5. The wiring according to claim 1, wherein the wiring is a metal containing at least one element selected from Ti, Ni, Al, Cu, Au, Pb, Sn, Pd, and W, or an alloy thereof. A semiconductor device according to claim 1.   The semiconductor device according to claim 1, wherein the adhesive portion is an epoxy resin. Forming a contact hole pattern on the first surface of the transparent substrate, and forming a photosensitive insulating film on the second surface opposite to the first surface;
A MEMS device having a hollow structure is formed therein, a first chip having a first pad electrically connected to the MEMS device formed on an upper surface of the MEMS device, and a semiconductor device formed therein, the semiconductor device A second pad formed on the upper surface of the semiconductor device and a second pad electrically connected to the semiconductor device, and the upper surfaces of the first and second chips are in contact with the photosensitive insulating film of the transparent substrate. Mounting process,
Embedding a gap between a side surface of the MEMS device and a side surface of the semiconductor device facing the side surface with an adhesive portion;
Irradiating light from the second surface side of the transparent substrate on which the contact hole pattern is formed, and exposing the photosensitive insulating film;
Forming a contact hole connected to the first and second pads in the photosensitive insulating film by peeling the transparent substrate from the photosensitive insulating film and developing the photosensitive insulating film;
Forming a wiring connected to the first and second pads on the photosensitive insulating film;
A method of manufacturing a semiconductor device, comprising:   The step of curing the bonding portion between the step of forming the contact hole and the step of forming the wiring, and the step of bonding the first chip and the second chip. 8. A method of manufacturing a semiconductor device according to 7.

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