JP2009049188A - Semiconductor device, method for manufacturing the same, and electronic device - Google Patents

Abstract

An object of the present invention is to ensure electrical insulation reliability without depending on the characteristics of an adhesive.
An electronic device includes a semiconductor device and a wiring substrate on which a wiring pattern having a plurality of substrate electrodes is formed and the semiconductor device is mounted. The plurality of wirings 24 and the plurality of substrate electrodes 40 face each other and are electrically connected. The resin protrusion 18 is compressed in the facing direction of the semiconductor device and the wiring substrate 34, and the exposed portion 28 is in close contact with the substrate electrode 40. The surface of the resin protrusion 18 has a plurality of first regions 20 and a plurality of second regions 22 that are lower than the plurality of first regions 20 alternately. Each first region 20 includes a support portion 26 on which one of the wirings 24 is mounted, and an exposed portion 28 exposed from the wiring 24 between the support portion 26 and the second region 22.
[Selection] Figure 7

Description

  The present invention relates to a semiconductor device, a manufacturing method thereof, and an electronic device.

In order to realize high productivity of the mounting process depending on the adhesive when mounting a bump having a resin core as shown in Patent Document 1 on a substrate as shown in Patent Document 2 using an adhesive. Some cure in a few seconds to a few dozen seconds. With such an adhesive, depending on the combination of the semiconductor device, the mounting substrate, the heating jig of the mounting device, and the environment, the heat transfer varies and the degree of curing varies. Adhesives that are insufficiently cured cannot exhibit the properties of the original cured film, making it difficult to ensure sufficient connection reliability. In particular, the insulation reliability deteriorates. Thus, it has been difficult to realize both short-time curing productivity and compatibility.
JP-A-2005-353983 JP 2006-146041 A

  An object of this invention is to ensure electrical insulation reliability, without depending on the characteristic of an adhesive agent.

(1) An electronic device according to the present invention includes:
A semiconductor device, a semiconductor substrate on which an integrated circuit is formed, a plurality of pads formed on the semiconductor substrate and electrically connected to the integrated circuit, and an opening exposing at least a part of each of the pads A passivation film formed on the semiconductor substrate, a resin protrusion disposed on the passivation film, and extending from the plurality of pads to the resin protrusion. A plurality of wirings arranged at intervals, and the surface of the resin protrusion has a plurality of first regions and a plurality of second regions that are lower than the plurality of first regions. And each of the first regions includes a support part on which any of the wirings is mounted, and an exposed part exposed from the wiring between the support part and the second region, Semiconductor device including ,
A wiring pattern having a plurality of substrate electrodes is formed, and a wiring substrate on which the semiconductor device is mounted;
Have
The plurality of wirings and the plurality of substrate electrodes are opposed and electrically connected,
The resin protrusion is compressed in the facing direction of the semiconductor device and the wiring substrate, and the exposed portion is in close contact with the substrate electrode. According to the present invention, the exposed portion of the resin protrusion functions as a seal member by being in close contact with the substrate electrode. This makes it possible to ensure electrical insulation reliability without depending on the characteristics of the adhesive.
(2) In this electronic device,
The first width of each of the first regions in the direction between the pair of adjacent second regions is wider than the second width of each of the substrate electrodes in a direction parallel to the first width. May be.
(3) In this electronic device,
The exposed portion of the resin protrusion may be in close contact with the outside of the substrate electrode from an end portion of the substrate electrode of the wiring board.
(4) In this electronic device,
The semiconductor device may further include an adhesive that bonds the semiconductor device and the wiring board, and the adhesive may be disposed so as to reach between the second region of the resin protrusion and the wiring board.
(5) A semiconductor device according to the present invention includes:
A semiconductor substrate on which an integrated circuit is formed;
A plurality of pads formed on the semiconductor substrate and electrically connected to the integrated circuit;
A passivation film formed on the semiconductor substrate having an opening exposing at least a part of each of the pads;
A resin protrusion disposed on the passivation film;
A plurality of wirings extending from above the plurality of pads to the resin projections, and arranged on the resin projections at intervals from each other;
Have
The surface of the resin protrusion alternately includes a plurality of first regions and a plurality of second regions that are lower than the plurality of first regions,
Each of the first regions includes a support part on which any one of the wirings is mounted, and an exposed part exposed from the wirings between the support part and the second region. According to the present invention, since the exposed portion of the resin protrusion can function as a sealing member, it is possible to ensure electrical insulation reliability without depending on the characteristics of the adhesive.
(6) A method for manufacturing a semiconductor device according to the present invention includes:
A semiconductor substrate on which an integrated circuit is formed, wherein a plurality of pads electrically connected to the integrated circuit are formed, and a passivation film having an opening exposing at least a part of each of the pads is formed. Forming a resin protrusion on the passivation film of the substrate;
Forming a plurality of metal layers so as to reach the resin protrusions from the plurality of pads and to be spaced apart from each other on the resin protrusions;
Using the plurality of metal layers as a mask, the surface of the resin protrusion is exposed from the plurality of first regions covered by the plurality of metal layers and from the plurality of first regions. Etching to alternately have a plurality of second regions that have been lowered, and
Etching the plurality of metal layers so that the width is reduced to form a plurality of wirings;
Including
The plurality of metal layers are etched so that each of the first regions is exposed from the wiring between the support portion on which any of the wirings is mounted and the support portion and the second region. Part. According to the present invention, since the exposed portion of the resin protrusion can function as a sealing member, it is possible to ensure electrical insulation reliability without depending on the characteristics of the adhesive.

  FIG. 1 is a plan view showing a semiconductor device according to an embodiment of the present invention. FIG. 2 is an enlarged perspective view of a part of the semiconductor device shown in FIG. 3 is a cross-sectional view taken along the line III-III of the semiconductor device shown in FIG. 1, and FIG. 4 is a cross-sectional view taken along the line IV-IV of the semiconductor device shown in FIG.

  The semiconductor device has a semiconductor substrate 10. If the semiconductor substrate 10 is a semiconductor chip, it has a rectangular surface, and if it is a semiconductor wafer, each region that becomes a semiconductor chip is a rectangular surface. An integrated circuit 12 (transistor or the like) is formed on the semiconductor substrate 10 (one semiconductor chip or each region that becomes a semiconductor chip). Pads 14 are formed on the semiconductor substrate 10 so as to be electrically connected to the integrated circuit 12. The pads 14 are arranged in one row or multiple rows (parallel multiple rows). The pads 14 are arranged along (in parallel with) the sides of the rectangular surface of the semiconductor substrate 10. The pad 14 is electrically connected to the integrated circuit 12 via internal wiring (not shown).

A passivation film 16 as a protective film is formed on the semiconductor substrate 10 so that at least a part of the pad 14 is exposed. The passivation film 16 may be formed of only an inorganic material such as SiO ₂ or SiN. The passivation film 16 is formed above the integrated circuit 12.

  Resin protrusions 18 are provided on the semiconductor substrate 10 (on the passivation film 16). FIG. 1 shows resin protrusions 18 extending (in parallel) along the sides of the rectangular surface of the semiconductor substrate 10, and a plurality of resin protrusions 18 are arranged in parallel. Examples of the material of the resin protrusion 18 include polyimide resin, silicone-modified polyimide resin, epoxy resin, silicone-modified epoxy resin, benzocyclobutene (BCB), polybenzoxazole (PBO), acrylic resin, silicone resin, and phenol. A resin such as a resin may be used.

  The resin protrusion 18 has a long shape. The surface of the resin protrusion 18 (surface facing away from the semiconductor substrate 10) is a convex curved surface. Specifically, the surface of the resin protrusion 18 is a rotation surface drawn by rotating a line (straight line or broken line) located around the longitudinal axis with the longitudinal axis of the resin protrusion 18 or a straight line parallel thereto as a rotation axis. The surface of the resin protrusion 18 has a plurality of first regions 20 and a plurality of second regions 22 alternately. That is, there is one second region 22 between the pair of first regions 20, and there is one first region 20 between the pair of second regions 22. The first region 20 has a shape of a curved surface (a part of the rotating surface of the cylinder) obtained by cutting the cylinder along a plane parallel to the central axis. The second region 22 also has a shape of a curved surface (a part of the rotating surface of the cylinder) obtained by cutting the cylinder along a plane parallel to the central axis. However, the second region 22 is lower (closer to the semiconductor substrate 10) than the first region 20. The width of the second region 22 in the direction intersecting the longitudinal axis is smaller than that of the first region 20. By lowering the second region 22 in this manner, a portion that becomes an external terminal of the wiring 24 can be increased, and electrical connection can be easily achieved.

  A plurality of wirings 24 are formed on the semiconductor substrate 10. As a material of the wiring 24, Au, Ti, TiW, W, Cr, Ni, Al, Cu, Pd, lead-free solder, or the like can be used. The wiring 24 is formed of one layer or a plurality of layers. The plurality of wirings 24 are formed from the pad 14 to the resin protrusion 18. The plurality of wirings 24 are formed on the upper surface of the resin protrusion 18 with an interval between adjacent ones. A plurality of wirings 24 are formed on one resin protrusion 18. The wiring 24 extends so as to intersect the longitudinal axis of the resin protrusion 18. The wiring 24 extends from the pad 14 to the resin protrusion 18 through the passivation film 16. The wiring 24 and the pad 14 may be in direct contact, or a conductive film (not shown) may be interposed therebetween. The wiring 24 is formed so as to extend over the passivation film 16 beyond the end of the resin protrusion 18 opposite to the pad 14.

  The first region 20 of the resin protrusion 18 includes a support portion 26 on which any one of the wires 24 is mounted, and an exposed portion 28 exposed from the wire 24 between the support portion 26 and the second region 22. In the first region 20, there is one support portion 26 between the pair of exposed portions 28, and the wiring 24 is located on the support portion 26. The wiring 24 is higher than the exposed portion 28 by the thickness.

  5A to 5C are diagrams for explaining a method for manufacturing a semiconductor device according to an embodiment of the present invention. In the present embodiment, resin protrusions 18 are formed on the passivation film 16 of the semiconductor substrate 10 described above. For example, a photosensitive resin precursor layer is formed on the passivation film 16 by spin coating or the like, the resin precursor layer is exposed using a mask, developed and patterned, and further melted by heat to form a surface. Re-curing into a surface shape with curvature by tension. Then, as shown in FIG. 5A, a surface-shaped resin protrusion 18 having a curvature is formed.

  Subsequently, a metal film is formed on the passivation film 16 and the resin protrusion 18 by sputtering or the like, and lithography is applied to pattern the metal film. Thus, as shown in FIG. 5B, the plurality of metal layers are formed so as to reach the resin protrusions 18 from the plurality of pads 14 and are spaced from each other on the resin protrusions 18. 30 is formed.

Subsequently, as shown in FIG. 5C, with the plurality of metal layers 30 as a mask, the surface of the resin protrusion 18 is covered with the plurality of first regions 20 covered with the plurality of metal layers 30, and the plurality of metals. Etching is performed so as to alternately include a plurality of second regions 22 exposed from the layer 30 and lower than the plurality of first regions 20. For etching, plasma (for example, O ₂ plasma) may be used.

  Thereafter, the plurality of metal layers 30 are etched so that the width is narrowed to form a plurality of wirings 24 (see FIG. 2). By etching the plurality of metal layers 30, each first region 20 is exposed from the wiring 24 between the support portion 26 on which any one of the wirings 24 is mounted and the support portion 26 and the second region 22. And an exposed portion 28.

  FIG. 6 is a diagram for explaining a method for manufacturing an electronic device according to an embodiment of the present invention. Note that the cross section of the semiconductor device illustrated in FIG. 6 corresponds to the cross section illustrated in FIG.

In the present embodiment, the above-described semiconductor device (wherein the semiconductor substrate 10 is a semiconductor chip) is disposed on the wiring substrate 34 via the thermosetting adhesive resin precursor 32. A wiring pattern 36 is formed on the wiring substrate 34, and a passivation film 38 is formed as a protective film so that a part of the wiring pattern 36 is exposed. The passivation film 38 may be formed of only an inorganic material such as SiO ₂ or SiN. A portion of the wiring pattern 36 exposed from the passivation film 38 is a substrate electrode 40. The wiring board 34 may be a part of a liquid crystal panel or an organic EL (Electrical Luminescence) panel. The wiring board 34 may be glass or ceramics.

The semiconductor device is disposed so that the wiring 24 on the resin protrusion 18 faces the substrate electrode 40. Further, the exposed portion 28 of the resin protrusion 18 is opposed to the substrate electrode 40. Specifically, the exposed portion 28 of the resin protrusion 18 is formed on the end of the substrate electrode 40 of the wiring substrate 34 from the outside of the substrate electrode 40 (when the portion adjacent to the substrate electrode 40 of the passivation film 38 or the passivation film 38 is not formed). Are opposed so as to reach the surface of the wiring board 34). Incidentally, the first region 20 of the resin protrusion 18, the first width W ₁ direction between the second region 22 of the pair of both sides are each substrate electrode 40, the first width W ₁ parallel to direction the second wider than the width _{W 2.}

  Then, a pressing force and heat are applied between the semiconductor device and the wiring board 34. The plurality of wirings 24 on the resin protrusion 18 are electrically connected (pressure contact) to the substrate electrode 40 by the pressing force, and the exposed portion 28 is brought into close contact with a part of the substrate electrode 40. Since the resin protrusion 18 is compressed, the wiring 24 is recessed into the resin protrusion 18.

  In the resin protrusion 18, since the second region 22 is lower than the first region 20 to form a recess, the adhesive resin precursor 32 can flow in a direction intersecting the resin protrusion 18. Therefore, the adhesive resin precursor 32 can be spread and bubbles can be removed.

  Then, the adhesive resin precursor 32 is cured and contracted by heat. The pressing force is maintained until the adhesive resin precursor 32 is cured. When the adhesive resin precursor 32 is cured, the pressing force is released. In this way, an electronic device is manufactured.

  FIG. 7 is a diagram illustrating an electronic device according to an embodiment of the present invention. The electronic device includes the above-described semiconductor device (where the semiconductor substrate 10 is a semiconductor chip) and a wiring substrate 34 on which a wiring pattern 36 having a plurality of substrate electrodes 40 is formed. The semiconductor device is mounted on the wiring substrate 34 so that the wiring 24 on the resin protrusion 18 (the upper end portion thereof) faces the substrate electrode 40. The plurality of wirings 24 and the substrate electrode 40 are electrically connected. The wiring board 34 may be a part of a liquid crystal panel or an organic EL (Electrical Luminescence) panel. The wiring pattern 36 may be glass or ceramics.

  The resin protrusion 18 is disposed in a compressed state in the facing direction of the semiconductor device and the wiring board 34. The exposed portion 28 of the resin protrusion 18 is in close contact with the substrate electrode 40. Specifically, the exposed portion 28 of the resin protrusion 18 is formed on the end of the substrate electrode 40 of the wiring substrate 34 from the outside of the substrate electrode 40 (when the portion adjacent to the substrate electrode 40 of the passivation film 38 or the passivation film 38 is not formed). Is in close contact with the surface of the wiring board 34). For example, the central portion of the substrate electrode 40 and a part of the wiring 24 are in contact (contact), and the exposed portion 28 is in close contact with the peripheral portion of the substrate electrode 40 so as to completely surround the periphery. By compressing the resin protrusion 18, the wiring 24 is recessed into the resin protrusion 18, and the surface of the wiring 24 and the surface of at least the portion of the exposed portion 28 adjacent to the wiring 24 are flush with each other.

  According to the present embodiment, the exposed portion 28 of the resin protrusion 18 functions as a seal member by being in close contact with the substrate electrode 40. Thereby, since the insulation of the adjacent wiring 24 is ensured, it becomes possible to ensure electrical insulation reliability without depending on the characteristic of the adhesive 42.

  A cured adhesive 42 is interposed between the semiconductor substrate 10 and the wiring substrate 34. The adhesive 42 reaches between the second region 22 of the resin protrusion 18 and the wiring board 34. The adhesive 42 is cured and shrunk. The adhesive 42 contains residual stress due to shrinkage at the time of curing.

  The electronic device may be a display device (panel module). The display device may be, for example, a liquid crystal display device or an EL (Electrical Luminescence) display device. FIG. 8 shows an electronic device 1000 configured as a display device. The semiconductor device 1 used for the electronic device 1000 is a driver IC that controls a display device. As an electronic apparatus having the electronic device 1000, FIG. 9 shows a notebook personal computer 2000, and FIG. 10 shows a mobile phone 3000.

  The present invention is not limited to the above-described embodiments, and various modifications can be made. For example, the present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same purposes and results). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

FIG. 1 is a plan view showing a semiconductor device according to an embodiment of the present invention. FIG. 2 is an enlarged perspective view of a part of the semiconductor device shown in FIG. 3 is a cross-sectional view of the semiconductor device shown in FIG. 1 taken along line III-III. 4 is a cross-sectional view taken along line IV-IV of the semiconductor device shown in FIG. 5A to 5C are diagrams for explaining a method for manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 6 is a diagram for explaining a method for manufacturing an electronic device according to an embodiment of the present invention. FIG. 7 is a diagram illustrating an electronic device according to an embodiment of the present invention. FIG. 8 is a diagram for explaining an electronic device using the semiconductor device according to the embodiment of the present invention. FIG. 9 is a diagram illustrating an electronic apparatus having the electronic device according to the embodiment of the invention. FIG. 10 is a diagram illustrating an electronic apparatus having the electronic device according to the embodiment of the invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Semiconductor substrate, 12 ... Integrated circuit, 14 ... Pad, 16 ... Passivation film | membrane, 18 ... Resin protrusion, 20 ... 1st area | region, 22 ... 2nd area | region, 24 ... Wiring, 26 ... Support part, 28 ... Exposure 30: Metal layer, 32 ... Adhesive resin precursor, 34 ... Wiring substrate, 36 ... Wiring pattern, 38 ... Passivation film, 40 ... Substrate electrode, 42 ... Adhesive

Claims (6)

A semiconductor device, a semiconductor substrate on which an integrated circuit is formed, a plurality of pads formed on the semiconductor substrate and electrically connected to the integrated circuit, and an opening exposing at least a part of each of the pads A passivation film formed on the semiconductor substrate, a resin protrusion disposed on the passivation film, and extending from the plurality of pads to the resin protrusion. A plurality of wirings arranged at intervals, and the surface of the resin protrusion has a plurality of first regions and a plurality of second regions that are lower than the plurality of first regions. And each of the first regions includes a support part on which any of the wirings is mounted, and an exposed part exposed from the wiring between the support part and the second region, Semiconductor device including ,
A wiring pattern having a plurality of substrate electrodes is formed, and a wiring substrate on which the semiconductor device is mounted;
Have
The plurality of wirings and the plurality of substrate electrodes are opposed and electrically connected,
The resin protrusion is compressed in the facing direction of the semiconductor device and the wiring substrate, and the exposed portion is in close contact with the substrate electrode. The electronic device according to claim 1,
The first width of each of the first regions in the direction between the pair of adjacent second regions is wider than the second width of each of the substrate electrodes in a direction parallel to the first width. Electronic devices. The electronic device according to claim 1 or 2,
The exposed portion of the resin protrusion is an electronic device that is in close contact with the outside of the substrate electrode from an end portion of the substrate electrode of the wiring board. The electronic device according to any one of claims 1 to 3,
The electronic device further comprising an adhesive that bonds the semiconductor device and the wiring board, and the adhesive is disposed between the second region of the resin protrusion and the wiring board. A semiconductor substrate on which an integrated circuit is formed;
A plurality of pads formed on the semiconductor substrate and electrically connected to the integrated circuit;
A passivation film formed on the semiconductor substrate having an opening exposing at least a part of each of the pads;
A resin protrusion disposed on the passivation film;
A plurality of wirings extending from above the plurality of pads to the resin projections, and arranged on the resin projections at intervals from each other;
Have
The surface of the resin protrusion alternately includes a plurality of first regions and a plurality of second regions that are lower than the plurality of first regions,
Each of the first regions includes a support part on which any of the wirings is mounted, and an exposed part exposed from the wirings between the support part and the second region. A semiconductor substrate on which an integrated circuit is formed, wherein a plurality of pads electrically connected to the integrated circuit are formed, and a passivation film having an opening exposing at least a part of each of the pads is formed. Forming a resin protrusion on the passivation film of the substrate;
Forming a plurality of metal layers so as to reach the resin protrusions from the plurality of pads and to be spaced apart from each other on the resin protrusions;
Using the plurality of metal layers as a mask, the surface of the resin protrusion is exposed from the plurality of first regions covered by the plurality of metal layers and from the plurality of first regions. Etching to alternately have a plurality of second regions that have been lowered, and
Etching the plurality of metal layers so that the width is reduced to form a plurality of wirings;
Including
The plurality of metal layers are etched so that each of the first regions is exposed from the wiring between the support portion on which any of the wirings is mounted and the support portion and the second region. And a method for manufacturing a semiconductor device.

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