JP2008311940A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To easily protect a sound detecting part from various environmental elements and excessive pressure fluctuation in a semiconductor device provided with a semiconductor sensor chip having the sound detecting part for detecting pressure fluctuation by vibrations. <P>SOLUTION: The semiconductor device 1 is provided, which is provided with a housing 4 having a hollow cavity part S and a sound hole 21 for making the cavity part S communicate with the outside, and the semiconductor sensor chip 5 having the sound detecting part 13 arranged in the housing 4 to detect pressure fluctuation by vibrations, wherein in the housing 4, an intrusion direction control structure 25 is formed, preventing the pressure fluctuation and environmental elements coming into the cavity part S through the sound hole 21 from directly advancing to the sound detecting part 13 from the sound hole 21. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device including a semiconductor sensor chip such as a microphone chip or a pressure sensor chip, and a manufacturing method thereof.

Conventionally, a semiconductor device (microphone package), for example, as in Patent Document 1, detects pressure fluctuations such as sound by vibration in a housing in which a hollow cavity and an acoustic hole that communicates this cavity with the outside are formed. A semiconductor sensor chip (microphone chip) provided with a transducer section (acoustic detection section) is arranged.
JP-T-2004-537182

However, by simply forming a simple acoustic hole in the housing, environmental elements such as sunlight, droplets, and dust can easily enter the cavity from the acoustic hole. In particular, there is a problem that characteristics of the semiconductor sensor chip fluctuate when droplets or dust adhere to the transducer part or when light reaches.
Further, in the case of a simple acoustic hole, there is a problem that stress is applied to the transducer part because excessive pressure fluctuation enters the cavity part from the acoustic hole and directly reaches the transducer part.
In addition, although the environmental barrier is provided in the semiconductor device of patent document 1, this environmental barrier prevents the penetration | invasion of the said environmental element from an acoustic hole to a cavity part, Comprising: An excessive pressure fluctuation is carried out to a transducer part. It does not play a role to protect against. In addition, the structure of the environmental barrier is complicated, and there is a problem that it takes time to manufacture the environment barrier.

  The present invention has been made in view of the above-described circumstances, and an object thereof is to provide a semiconductor device capable of easily protecting a semiconductor sensor chip from environmental elements and excessive pressure fluctuations, and a manufacturing method thereof. .

In order to solve the above problems, the present invention proposes the following means.
The semiconductor device according to the present invention includes a housing having a hollow cavity and an acoustic hole that communicates the cavity with the outside, and a semiconductor sensor chip having an acoustic detector disposed in the housing and detecting pressure fluctuations by vibration. And the housing is formed with an intrusion direction restricting structure that prevents the pressure fluctuation and environmental elements entering the cavity from the acoustic hole from going directly from the acoustic hole to the acoustic detection unit. Features.

In the semiconductor device, the intrusion direction restricting structure may include a protruding wall portion protruding from the inner surface of the housing, and the protruding wall portion may be disposed between the acoustic hole and the acoustic detection portion. .
Further, in the semiconductor device, the intrusion direction restricting structure may be configured so as to gradually separate the acoustic hole from the semiconductor sensor chip from the outer side of the housing toward the cavity. .
Further, in the semiconductor device, the housing is formed with a recessed portion that is recessed from the outer surface toward the hollow portion and protrudes from the inner surface, and the intrusion direction restricting structure does not oppose the acoustic hole to the acoustic detection portion. It is good also as forming and forming in the side wall part of the said hollow part.

In the semiconductor device according to these inventions, an intrusion direction including a protruding wall, an acoustic hole formed so as to gradually move away from the semiconductor sensor chip from the outside of the housing toward the cavity, and an acoustic hole formed in the recess Since the regulation structure is formed, pressure fluctuations such as sound entering the cavity are not directly directed, and the reflected or diffracted material on the inner surface of the housing or the protruding wall part reaches the sound detection part. . Therefore, even if excessive pressure fluctuations enter the cavity, the pressure fluctuations can be attenuated by the reflection and diffraction described above, so that it is possible to prevent excessive stress from being applied to the acoustic detection part due to pressure fluctuations. .
In addition, even if environmental elements such as sunlight, dust, and liquid droplets enter the cavity, the intrusion direction restricting structure prevents the sound detection unit from reaching the acoustic detection unit directly. It is also possible to prevent the characteristics of the semiconductor sensor chip from fluctuating due to adhesion of light or the arrival of light.

In the semiconductor device, an opening hole for discharging at least a part of the pressure fluctuation and the environmental element to the outside from the cavity portion is formed in the housing, and the protruding wall portion is formed from the acoustic hole. It may be formed so as to guide at least a part of the pressure fluctuation and the environmental element entering the cavity to the opening hole.
In this case, excessive pressure fluctuations and a part of environmental elements that have entered the cavity from the acoustic hole can be guided to the opening hole by the protruding wall part, and can be discharged from the opening hole to the outside of the housing. Further, it is possible to more reliably prevent an excessive stress from being applied to the acoustic detection unit and fluctuations in the characteristics of the semiconductor sensor chip.

  Furthermore, in the semiconductor device, a notch line and a bend line connecting both ends of the notch line are formed in the housing, and the protruding wall portion is hollow in a region surrounded by the notch line and the bend line. It may be formed by being bent at the fold line so as to protrude to the portion, and the peripheral edge of the acoustic hole may be defined by the cut line and the fold line in a state where the protruding wall portion is formed.

  The semiconductor device manufacturing method according to the present invention includes a semiconductor sensor chip having an acoustic detection unit that detects a pressure fluctuation by vibration in a housing having a hollow cavity and an acoustic hole that communicates the cavity with the outside. A manufacturing method of a semiconductor device for manufacturing a semiconductor device having a provided configuration, a chip mounting step of fixing the semiconductor sensor chip on a mounting surface of a substrate, and a lid that covers at least the upper side of the semiconductor sensor chip on the mounting surface And a lid installation step for forming the housing having the hollow portion together with the substrate, and forming a linear cut line in the lid member before the lid installation step. A slit forming step, and a plastic deformation process is performed on the lid member so that a bending line connecting both ends of the slit line is formed on the lid member. And a region surrounded by the fold line is a protruding wall portion protruding from one main surface of the lid, and the cut line and the fold line in the state where the protruding wall portion is formed are used as the acoustic hole. A deforming step of forming a peripheral edge of the cover body, and in the lid installation step, the one main surface is opposed to the mounting surface, and the protruding wall portion is formed between the acoustic detection portion and the previous acoustic hole. The lid member is disposed so as to be disposed therebetween.

In these cases, it is not necessary to form the protruding wall portion by a member separate from the component parts of the housing, so that the number of component parts of the housing can be reduced and the manufacturing cost of the semiconductor device can be reduced.
In addition, since the acoustic hole and the protruding wall portion can be formed at the same time by bending a part of the lid member, the manufacturing efficiency of the semiconductor device can be improved.

In the semiconductor device, a through hole that communicates outward from the cavity is formed in the housing, and the intrusion direction restricting structure is provided in the cavity so that the acoustic hole and the through hole are connected to each other. It consists of a tubular pipe part to connect, and the communicating wall which connects the said pipe part and the said cavity part may be formed in the surrounding wall part of this pipe part.
In the semiconductor device according to the present invention, when pressure fluctuation enters the pipe part from the acoustic hole, a part of the pressure part enters the cavity part through the communication hole of the pipe part, and the remaining part comes out of the housing from the through hole. It will be. That is, the pressure fluctuation that enters the cavity and reaches the acoustic detection part is diffracted and attenuated at least in the communication hole of the pipe part. Therefore, it is possible to suppress an excessive pressure fluctuation from directly entering the cavity, and it is possible to prevent an excessive stress from being applied to the acoustic detection section due to the pressure fluctuation.
In addition, since environmental elements such as sunlight, dust, and droplets that reach the acoustic hole from the outside do not pass through the pipe part and the communication hole formed in the pipe part, they do not reach the acoustic detection part. It is also possible to prevent the characteristics of the semiconductor sensor chip from fluctuating due to liquid droplets, dust, or the like adhering to the portion or light reaching.

  The semiconductor device of the present invention further includes a housing having a hollow cavity portion and a semiconductor sensor chip having an acoustic detection portion that is disposed in the cavity portion and detects pressure fluctuations by vibration. And a vibration part that vibrates according to the pressure fluctuation of the other side and propagates the pressure fluctuation based on the vibration to the cavity.

In the semiconductor device according to the present invention, the pressure fluctuation generated outside the housing propagates to the cavity due to the vibration of the vibration part, so that without forming an acoustic hole that communicates the cavity to the outside in the housing, That is, even in a state where the hollow cavity is sealed with respect to the outside, the pressure fluctuation can reach the acoustic detection unit. Therefore, environmental elements such as sunlight, dust, and droplets do not reach the acoustic detection unit, and droplets and dust adhere to the acoustic detection unit and light reaches the characteristics of the semiconductor sensor chip. Can be reliably prevented from fluctuating.
And even if an excessive pressure fluctuation reaches the outside of the housing, the pressure fluctuation can be attenuated in the vibration part, so that an excessive stress can be prevented from being applied to the acoustic detection part due to the pressure fluctuation.

  In the semiconductor device, the vibration part is surrounded by a cut line formed in the housing, leaving a connection portion with the housing, and a vibration piece that can vibrate with respect to the housing; It is good also as providing the elastic membrane affixed on the inner surface or outer surface of the said housing so that a line may be covered, and elastically deformable according to the vibration of the said vibration piece.

  Further, in the semiconductor device, the vibration part is attached to an inner surface or an outer surface of the housing so as to close the opening hole formed in the housing and communicating the cavity portion outward. An elastic film that can be elastically deformed may be provided.

According to the present invention, even if pressure fluctuations such as sound and environmental elements enter the cavity from the acoustic hole, the penetration direction is regulated by the intrusion direction regulating structure. And can be easily protected from excessive pressure fluctuations.
In addition, according to the present invention, by providing the vibration part in the housing, it is possible to suppress the excessive pressure fluctuation and to prevent the environmental element from entering. It becomes possible to easily protect against pressure fluctuations.

  The semiconductor device according to the first embodiment of the present invention will be described below with reference to FIGS. As shown in FIGS. 1 and 2, a semiconductor device 1 according to this embodiment includes a substrate 3 formed in a box shape, and a microphone chip (semiconductor sensor chip) 5 arranged on the surface 3 a side of the substrate 3. An LSI chip 7 and a lid member 9 are provided to constitute a so-called microphone package.

The microphone chip 5 is provided so as to cover the inner hole 11a formed in the thickness direction and an inner hole 11a penetrating in the thickness direction. Part 13. The acoustic detection unit 13 is disposed so as to be opposed to the substantially plate-like fixed electrode 13 a provided so as to cover the inner hole 11 a of the support unit 11 and at a predetermined interval in the thickness direction of the fixed electrode 13 a and the support unit 11. And a diaphragm 13b that vibrates according to pressure fluctuations.
The LSI chip 7 plays a role of driving and controlling the microphone chip 5. For example, an amplification circuit for amplifying an electric signal from the microphone chip 5 and an A / D for processing the electric signal as a digital signal. It includes a converter, a DSP (digital signal processor) and the like.

The substrate 3 is a so-called multilayer wiring substrate such as a ceramic substrate, and the substrate 3 is formed with a concave portion 15 having a substantially rectangular shape in cross section that is recessed from the surface 3a. In addition, when the board | substrate 3 consists of a ceramic multilayer wiring board, this can be manufactured by laminating | stacking several ceramic sheets in which the conductive path of the predetermined pattern which makes the wiring part of the board | substrate 3 was formed. And the above-mentioned recessed part 15 can be formed by laminating | stacking the ceramic sheet formed cyclically | annularly.
The microphone chip 5 and the LSI chip 7 are mounted on the bottom surface (mounting surface) 15a of the recess 15 via a die bond material (not shown). The microphone chip 5 is disposed such that the sound detection unit 13 faces the bottom surface 15a of the recess 15 through the inner hole 11a.

The microphone chip 5 and the LSI chip 7 disposed on the bottom surface 15a of the recess 15 are electrically connected to each other by the first wire 17, and the LSI chip 7 is connected to the second wire (not shown). And is electrically connected to a wiring portion (not shown) of the substrate 3 exposed to the bottom surface 15a of the recess 15. The wiring portion of the substrate 3 is formed so as to extend to the outer surface of the substrate 3, and the microphone chip 5 and the LSI chip 7 are electrically connected to the mounting substrate in a state where the semiconductor device 1 is mounted on the mounting substrate (not shown). It has become so.
Further, the bottom surface 15a of the recess 15 is formed with a resin sealing portion 19 for sealing the LSI chip 7 and the joint portion between the LSI chip 7 and the first wire 17 and the second wire. The LSI chip 7 and the joint portion are protected by the stopper 19.

The lid member 9 is formed by forming a conductive material such as a copper material in a substantially plate shape, and is fixed to the surface 3 a of the substrate 3. The lid member 9 includes the microphone chip 5 and the LSI chip 7 together with the substrate 3 by covering the recess 15, that is, covering the bottom surface 15 a of the substrate 3, the microphone chip 5, and the LSI chip 7. A cavity S is formed. The lid member 9 is formed with an acoustic hole 21 that penetrates in the thickness direction and communicates the cavity S outward.
Accordingly, the lid member 9 constitutes the housing 4 having the cavity portion S and the acoustic hole 21 communicating with the substrate 3 together with the substrate 3, and the microphone chip 5 and the LSI chip 7 are arranged in the housing 4. Will be.

By the way, the lid member 9 is formed with a cut line 23a having a curved line shape (arc shape in the illustrated example) penetrating in the thickness direction and a fold line 23b having a linear line shape connecting the both ends. An area portion in plan view (substantially semicircular area portion in the illustrated example) surrounded by the cut line 23a and the fold line 23b faces the microphone chip 5 and the LSI chip 7 and forms the inner surface of the housing 4. The lid member 9 is bent at a folding line 23b so as to protrude from the back surface 9a toward the cavity S side. Thereby, the region portion in plan view surrounded by the cut line 23a and the folding line 23b in the lid member 9 forms a substantially plate-like protruding wall portion 25 that protrudes from the inner surface of the housing 4 toward the cavity S, The peripheral edge of the acoustic hole 21 described above is defined by a cut line 23a and a folding line 23b in a state where the protruding wall portion 25 is formed.
Here, the cut line 23a and the fold line 23b are formed above the LSI chip 7 sealed by the resin sealing portion 19, and the fold line 23b is closer to the microphone chip 5 than the cut line 23a. Is formed. Thus, the protruding wall portion 25 is disposed between the acoustic hole 21 and the acoustic detection portion 13.

Further, the protruding wall portion 25 is inclined in a direction away from the sound detection portion 13 with a bend line 23b forming the periphery of the sound hole 21 as a starting point, and is arranged so as to be exposed outward from the sound hole 21 in plan view. Has been. Accordingly, environmental elements such as pressure fluctuations, sunlight, dust, and droplets enter the cavity S from the acoustic hole 21 in the direction away from the acoustic detection unit 13 by the protruding wall 25 (arrow a in FIG. 2). It will be regulated. That is, in this embodiment, the protruding wall portion 25 has an intrusion direction regulating structure that prevents pressure fluctuations and environmental elements entering the cavity portion S from the acoustic hole 21 from directing from the acoustic hole 21 to the acoustic detection portion 13. ing.
It should be noted that the pressure fluctuation that has entered the cavity S reaches the acoustic detection unit 13 by being reflected and diffracted in the housing 4, whereby the pressure fluctuation can be detected.

Next, a method for manufacturing the semiconductor device 1 having the above configuration will be described.
When manufacturing the semiconductor device 1, the substrate 3 having the recess 15 is manufactured in advance, and the microphone chip 5 and the LSI chip 7 are fixed to the bottom surface 15a of the substrate 3 (chip mounting process). Next, the first wire 17 is disposed between the microphone chip 5 and the LSI chip 7 by wire bonding, and the second wire is disposed between the LSI chip 7 and the wiring portion of the substrate 3 (wiring process). ). And after completion | finish of a wiring process, the resin sealing part 19 which seals the whole LSI chip 7 including the junction part with the above-mentioned wire is formed (sealing process).

Further, the lid member 9 is formed before or after or simultaneously with the chip mounting process, the wiring process and the sealing process (lid forming process).
In this lid forming step, first, a cut line 23a having a curved shape in plan view penetrating in the thickness direction is formed in the lid member 9 (cut forming step). Next, plastic deformation processing is performed on the lid member 9 so that bending lines 23b connecting both ends of the cut line 23a are formed on the lid member 9 (deformation processing step). By performing this plastic deformation process, the region surrounded by the cut line 23a and the folding line 23b is formed as a protruding wall portion 25 protruding from the back surface (one main surface) 9a of the lid member 9, and the protruding wall portion The cut line 23 a and the fold line 23 b in the state in which 25 is formed are the periphery of the acoustic hole 21. In addition, as a concrete plastic deformation process, a press work is mentioned, for example.

  Then, after the above-described chip mounting process, wiring process, sealing process, and lid forming process are completed, the lid member 9 is fixed to the surface 3a of the substrate 3 (lid body setting process), thereby the substrate 3 and the lid. The cavity S is formed by the body member 9, and the manufacture of the semiconductor device 1 is completed. In this lid installation step, the protruding wall 25 is disposed between the acoustic hole 21 and the acoustic detector 13 so that the back surface 9a of the lid member 9 faces the bottom surface 15a of the recess 15. In this way, the lid member 9 may be fixed.

According to the semiconductor device 1, since the protruding wall portion 25 is formed, pressure fluctuations such as sound entering the cavity portion S do not go directly to the acoustic detection portion 13, and the inner surface of the housing 4 and the protruding wall portion. What is reflected or diffracted at 25 or the like reaches the sound detection unit 13. Therefore, even if excessive pressure fluctuations enter the cavity S, the pressure fluctuations can be attenuated by the above-described reflection and diffraction, so that excessive stress is applied to the acoustic detection unit 13 due to the pressure fluctuations. Can be prevented.
In addition, even if environmental elements such as sunlight, dust, and droplets enter the cavity S from the acoustic hole 21, it is prevented from reaching the acoustic detection unit 13 directly by the protruding wall portion 25. It is possible to prevent the characteristics of the microphone chip 5 from fluctuating due to, for example, liquid droplets or dust adhering to 13 or the arrival of light.

In addition, according to the semiconductor device 1 and the manufacturing method thereof, since the protruding wall portion 25 is formed integrally with the lid member 9, the number of component parts of the housing 4 can be reduced to reduce the manufacturing cost of the semiconductor device 1. Can do.
Furthermore, since the acoustic hole 21 and the protruding wall portion 25 can be formed at the same time by bending a part of the lid member 9, the manufacturing efficiency of the semiconductor device 1 can be improved.

In the above embodiment, the acoustic hole 21 and the protruding wall portion 25 are defined by the curved cut line 23a and the linear folding line 23b formed in the lid member 9, However, it is sufficient that at least the folding line 23b is formed on the side closer to the microphone chip 5 than the cut line 23a, and the cut line 23a and the folding line 23b can be defined by any shape.
That is, for example, as shown in FIGS. 3 to 5, the acoustic hole 31 and the projecting wall portion 33 are each formed of a cut line 32 a that is linear in plan view and a plurality of linear fold lines 32 b that are formed so as to connect both ends thereof. It may be defined by ~ 32d. In the illustrated example, a plurality of linear folding lines 32b to 32d are formed. However, for example, a single curved folding line may be used.

In this case, by performing plastic deformation in the deformation process similar to the above embodiment, the region surrounded by the cut line 32a and the fold lines 32b to 32d protrudes from the back surface 9a of the lid member 9. The projecting wall 33 is formed. Further, the cut line 32 a and the folding lines 32 b to 32 d in the state where the protruding wall portion 33 is formed form the periphery of the acoustic hole 31.
In the plan view of the lid member 9 shown in FIG. 3, the acoustic hole 31 and the protruding wall portion 33 are formed in a trapezoidal shape in plan view, and in the sectional view of the lid member 9 shown in FIG. The part 33 is inclined in a direction away from the sound detection unit 13 as in the above embodiment. Moreover, the cross-sectional view shape of the protrusion wall part 33 shown in FIG. 5 is circular arc shape. That is, the protruding wall portion 33 in the illustrated example is formed by recessing a region portion surrounded by the cut line 32 a and the fold line 32 b from the surface 9 b of the lid member 9.

Moreover, in the said embodiment, although the protrusion wall part 25 inclined in the direction away from the acoustic detection part 13 and exposed outside from the acoustic hole 21 by planar view, it is not restricted to this, At least an acoustic hole What is necessary is just to be distribute | arranged between 21 and the acoustic detection part 13. FIG. That is, for example, as shown in FIG. 6, the protruding wall portion 25 may be formed by forming a crease in the middle portion 25 a in the inclined direction, or, for example, vertically protrudes from the back surface 9 a of the lid member 9. It is good.
For example, as shown in FIG. 7, the protruding wall portion 37 may be formed by a member separate from the lid member 9. In this case, it is necessary to form the acoustic hole 39 in the lid member 9 separately from the protruding wall portion 37.

Further, in addition to the acoustic hole 21 and the protruding wall portion 25 being formed in the housing 4, for example, as shown in FIGS. 8 to 10, at least a part of the environmental element is discharged outward from the cavity S. The opening wall 41, 42, 43 may be formed, and the protruding wall portion 25 guides at least part of the pressure fluctuation and the environmental element that has entered the cavity S from the acoustic hole 21 to the opening holes 41, 42, 43. It does not matter if it is formed as follows.
That is, for example, as shown in FIGS. 8 and 9, the substrate that constitutes the housing 4 so that the opening holes 41 and 42 are located in front of the direction in which the pressure fluctuations regulated by the protruding wall portion 25 and the environmental elements enter. 3 may be open to the side surface of the recess 15 forming the inner surface of the housing 4. For example, as shown in FIG. 10, the opening hole 43 may be formed in the lid member 9. In the case of this configuration, the upper surface portion of the resin sealing portion 19 is disposed on the front side in the direction in which the pressure fluctuation and the environmental elements are regulated, which are regulated by the protruding wall portion 25, and the resin sealing portion 19 is recessed from the upper surface portion. A concave portion 19 a is formed, and the pressure fluctuation and the flow direction of environmental elements entering from the acoustic hole 21 in the concave portion 19 a may be changed to face the opening hole 43.

In these cases, excessive pressure fluctuations and part of the environmental elements that have entered the cavity S from the acoustic hole 21 are opened by the recesses 19 a formed on the upper surface side of the protruding wall 25 and the resin sealing portion 19. 41, 42, and 43 can be guided to the outside of the housing 4 through the opening holes 41, 42, and 43, so that excessive stress is applied to the acoustic detection unit 13 and the microphone chip 5. It is possible to more reliably prevent the characteristics of the fluctuating.
In addition, as shown in FIG. 9, when the penetration direction of the opening hole 42 which penetrates the board | substrate 3 toward the outward from the cavity part S side corresponds to the inclination direction of the projection wall part 25, a projection wall part It is possible to discharge environmental elements and excessive pressure fluctuations that have entered along the inclination direction of 25 through the opening hole 42 more efficiently.

And when arrange | positioning the semiconductor devices 20, 30, 40 which formed the said opening holes 41, 42, 43 inside the housing | casing 50 which comprises electronic devices, such as a mobile telephone, as shown in FIGS. The acoustic hole 21 is formed in the housing 50 so as to face the introduction hole 51 for guiding the sound from the outside to the inside of the housing 50, and the acoustic hole 21 and the housing of the semiconductor devices 20, 30, 40. What is necessary is just to isolate between 50 introduction holes 51 with respect to the internal space of a housing | casing. For example, as shown in FIGS. 8 and 10, the lid member 9 is located around the acoustic hole 21 with the annular protrusion 52 protruding from the inner surface 50 a of the housing 50 located at the periphery of the introduction hole 51. For example, as shown in FIG. 9, a separate sound leakage preventing member 55 such as a gasket may be sandwiched between the acoustic hole 21 and the introduction hole 51.
By arranging the semiconductor devices 20, 30, and 40 in this way, the opening holes 41, 42, and 43 described above can communicate the cavity S with the internal space of the casing 50. It is possible to easily prevent outward pressure fluctuations and environmental elements from entering the cavity S through the opening holes 41, 42, and 43.

  Note that the method of releasing the environmental elements and the acoustic fluctuations that have entered the cavity S from the acoustic hole 21 to the outside is not limited to the formation of the opening holes 41, 42, and 43 described above. That is, for example, as shown in FIG. 11, a through hole 61 that communicates outward from the cavity S is formed in the substrate 3, and the acoustic hole 62 formed in the lid member 9 is connected to the through hole 61. A tubular pipe 63 may be provided in the cavity S. Here, in the peripheral wall portion of the pipe portion 63, a plurality of communication holes 64 for communicating the inside of the pipe portion 63 and the cavity portion S are formed.

  In the semiconductor device 60 having this configuration, when pressure fluctuation enters the pipe part 63 from the acoustic hole 62, a part of the pressure part enters the cavity S through the communication hole 64 of the pipe part 63, and the remaining part from the through hole 61 to the housing. 4 will come out of the outside. That is, the pressure fluctuation that enters the cavity S and reaches the acoustic detection unit 13 is diffracted and attenuated at least in the communication hole 64 of the pipe portion 63. Thereby, it is possible to suppress an excessive pressure fluctuation from directly entering the cavity S, and it is possible to prevent an excessive stress from being applied to the acoustic detection unit 13 due to the pressure fluctuation. Therefore, in the semiconductor device 60 having this configuration, the pipe portion 63 serves as an intrusion direction regulating structure.

In addition, environmental elements such as sunlight, dust, and droplets that reach the acoustic hole 62 from the outside do not reach the acoustic detection unit 13 unless they pass through the pipe portion 63 and the communication hole 64 formed in the pipe portion 63. Therefore, it is possible to prevent the characteristics of the microphone chip 5 from fluctuating due to droplets, dust, or the like adhering to the acoustic detection unit 13 or light reaching.
In this semiconductor device 60 as well, as in the semiconductor devices 20, 30, and 40 shown in FIGS. Intrusion into the hollow portion S from the hole 61 through the pipe 63 and the communication hole 64 can be easily prevented.

  Next, a second embodiment according to the present invention will be described with reference to FIGS. Note that, in the semiconductor device of the second embodiment, the same components as those of the semiconductor device 1 of the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

As shown in FIGS. 12 and 13, an acoustic hole 71 is formed in the lid member 9 of the semiconductor device 70 according to this embodiment so that the cavity S communicates outward. The acoustic hole 71 includes a first recess 71a carved from the front surface 9b of the lid member 9 toward the back surface 9a side, and a first recessed portion 71a carved from the back surface 9a of the lid member 9 toward the front surface 9b side. The two recessed portions 71b are connected to each other. These two recesses 71 a and 71 b are formed above the LSI chip 7 sealed by the resin sealing portion 19. Further, the two recessed portions 71 a and 71 b are arranged at positions shifted from each other in plan view so that only a part of them is overlapped in the thickness direction of the lid member 9. Specifically, the first recess 71a is formed closer to the microphone chip 5 than the second recess 71b.
That is, the acoustic hole 71 is formed so as to be gradually separated from the microphone chip 5 toward the cavity S from the outer side of the housing 4.

Accordingly, pressure fluctuations and environmental factors are regulated in a direction away from the acoustic detection unit 13 (arrow a in FIG. 13) by the acoustic hole 71 when entering the cavity S from the acoustic hole 71. That is, in this embodiment, the acoustic hole 71 constituted by the two recessed portions 71a and 71b prevents pressure fluctuations and environmental elements entering the cavity S from directing from the acoustic hole 71 directly to the acoustic detection unit 13. It has an intrusion direction regulation structure.
In the illustrated example, the depth dimension of each recessed part 71a, 71b is set to approximately half the thickness dimension of the lid member 9. However, the present invention is not limited to this, and at least each recessed part 71a. 71b is less than the thickness dimension of the lid member 9 and the sum of the depth dimensions of the two recessed portions 71a and 71b is equal to or greater than the thickness dimension of the lid member 9. In addition, it is possible to arbitrarily set a region where the two recessed portions 71 a and 71 b overlap in the thickness direction of the lid member 9.

The semiconductor device 70 configured as described above can be manufactured in the same manner as in the first embodiment except for the lid forming step. That is, when the lid member 9 of the semiconductor device 70 is formed, the first concave portion 71a and the second concave portion are subjected to half etching on the front surface 9b and the back surface 9a of the lid member 9, respectively. 71b may be formed (engraving process).
In the lid installation step, the microphone chip 5 is such that the back surface 9a of the lid member 9 faces the bottom surface 15a of the recess 15 and the first recess 71a is more than the second recess 71b. What is necessary is just to fix the cover body member 9 to the surface 3a of the board | substrate 3 so that it may distribute | arrange to the near side.
According to the semiconductor device 1, as in the first embodiment, since the pressure fluctuation and the environmental elements that have entered the cavity S from the acoustic hole 71 do not go directly to the acoustic detection unit 13, Easy protection from elements and excessive pressure fluctuations.

In the above embodiment, the acoustic hole 71 is constituted by the two low holes 71a and 71b. However, the present invention is not limited to this, and the microphone is at least from the outer side of the housing 4 toward the cavity S. What is necessary is just to form so that it may leave | separate from the chip | tip 5 gradually. That is, for example, as shown in FIGS. 14 and 15, the acoustic hole 73 may be formed to be inclined with respect to the thickness direction of the lid member 9.
In the case of this configuration, by setting the hole diameter of the acoustic hole 73 to be small or setting the inclination angle of the acoustic hole 73 with respect to the thickness direction of the lid member 9 to be large, It is also possible to prevent the opening 73a on the back surface 9a side from overlapping the opening 73b on the front surface 9b side (see FIG. 14). That is, it is possible to prevent the inside of the cavity S from being visually recognized from the outside in a plan view.

For example, as shown in FIGS. 16 and 17, the lid member 9 is formed with a recess 75 that is recessed from the front surface (outer surface) 9b and protrudes from the back surface (inner surface) 9a, and the acoustic hole 77 is formed as a recess. Of course, it may be formed in a portion of the 75 side walls that does not face the acoustic detector 13.
In this configuration, the intrusion direction restricting structure in which the depression 75 and the acoustic hole 77 formed in the side wall portion prevent pressure fluctuations and environmental elements entering the cavity S from directing from the acoustic hole 77 to the acoustic detection unit 13. The same effects as those of the above-described embodiment are achieved.

  Next, a third embodiment according to the present invention will be described with reference to FIGS. Note that, in the semiconductor device of the third embodiment, the same components as those of the semiconductor device 1 of the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

As shown in FIGS. 18 and 19, the lid member 9 of the semiconductor device 80 according to this embodiment is provided with a substantially U-shaped cut line 81 penetrating in the thickness direction in a plan view. The region surrounded by the cut line 81 in the lid member 9 forms a vibrating piece 83, and the vibrating piece 83 has a thickness relative to the lid member 9, leaving a connection portion with the lid member 9. It can vibrate in the direction. An elastically deformable elastic film 85 made of, for example, rubber is attached to the back surface (inner surface) 9 a of the lid member 9 so as to cover the cut line 81. That is, in the semiconductor device 80, the cavity S is sealed from the outside of the housing 4 by the elastic film 85.
In the illustrated example, the cut line 81 is formed at a position facing the LSI chip 7 sealed by the resin sealing portion 19, but at least the resonator element 83 is formed to face the cavity S. For example, it may be formed at a position facing the microphone chip 5.

The semiconductor device 80 having the above configuration can be manufactured in the same manner as in the first embodiment except for the lid forming step. That is, when forming the lid member 9 of the semiconductor device 80, first, a substantially U-shaped cut line 81 is formed in the lid member 9 so as to penetrate in the thickness direction (cut formation step). Then, what is necessary is just to affix so that the elastic film 85 may cover the cut line 81 so that this cut line 81 may be covered (elastic film sticking process).
In the semiconductor device 80, when the pressure fluctuation generated outside the housing 4 reaches the vibrating piece 83, the vibrating piece 83 vibrates in accordance with the pressure fluctuation as shown in FIG. Accordingly, the elastic film 85 is elastically deformed. Then, the pressure fluctuation propagates through the cavity S based on the vibration of the vibrating piece 83 and reaches the acoustic detection unit 13 of the microphone chip 5. Therefore, the vibrating piece 83 and the elastic film 85 constitute a vibrating portion that vibrates according to the pressure fluctuation outside the housing 4 and propagates the pressure fluctuation into the cavity S based on the vibration.

According to the semiconductor device 1, it is possible to cause the pressure fluctuation to reach the acoustic detection unit 13 without forming an acoustic hole that allows the cavity S to communicate outwardly in the housing 4. Therefore, the environmental element does not reach the acoustic detection unit 13, and it is ensured that the characteristics of the microphone chip 5 fluctuate due to liquid droplets, dust, or the like adhering to the acoustic detection unit 13 or the arrival of light. Can be prevented.
Moreover, even if an excessive pressure fluctuation reaches the outside of the housing 4, the pressure fluctuation can be attenuated in the vibration part, so that it is possible to prevent an excessive stress from being applied to the acoustic detection part 13 due to the pressure fluctuation. . The attenuation rate of the pressure fluctuation may be adjusted as appropriate by the elastic modulus of the vibrating piece 83 or the elastic film 85.
From the above, in the semiconductor device 80, the acoustic detection unit 13 can be easily protected from environmental elements and excessive pressure fluctuations.

In the semiconductor device 80 of the above embodiment, the elastic film 85 that covers the cut line 81 and seals the cavity S with respect to the outside of the housing 4 is attached to the back surface 9 a of the lid member 9. However, the present invention is not limited to this. For example, the lid member 9 may be attached to the surface (outer surface) 9b.
Further, although the cut line 81 is formed in a substantially U-shape, the present invention is not limited to this, and it is only necessary to have a shape that can form at least the vibrating piece 83 that can vibrate with respect to the lid member 9. .

Further, the thickness dimension of the vibrating piece 83 formed on the lid member 9 does not need to be equal to the other parts of the lid member 9. For example, as shown in FIG. It may be thinner than the part. In this case, since the rigidity of the vibrating piece 83 can be reduced while maintaining the rigidity of the lid member 9, the sensitivity of the vibrating piece 83 to small pressure fluctuations can be improved.
As a processing method for reducing the thickness dimension of the resonator element 83, for example, a half etching process is performed on the back surface 9a and the front surface 9b of the lid member 9, and the elastic film 85 is attached to the half etching process. More preferably, it is applied to the surface opposite to the surface to be applied. That is, when the elastic film 85 is affixed to the back surface 9 a of the lid member 9 as in the illustrated example, the surface 9 b of the lid member 9 may be half-etched.

In addition, the vibration part is configured by the vibration piece 83 and the elastic film 85. However, the vibration part is not limited thereto, and the vibration part vibrates at least according to the pressure fluctuation and the pressure fluctuation based on the vibration propagates into the cavity S. It is only necessary that the vibrating portion to be provided is provided in the housing 4.
Therefore, for example, as shown in FIG. 22, an opening hole 87 is formed in the lid member 9 so as to penetrate the cavity portion S in the thickness direction, and the lid body 9 is closed so as to close the opening hole 87. The elastic film 89 similar to that in the above embodiment may be attached to the back surface 9a or the front surface 9b of the member 9. In this case, when the pressure fluctuation generated outside the housing 4 reaches the elastic film 89, the elastic film 89 vibrates in accordance with the pressure fluctuation, and the pressure fluctuation is caused in the cavity S based on the vibration. Will propagate. That is, in this configuration, the elastic film 89 constitutes a vibrating part that propagates the pressure fluctuation into the cavity S.

Furthermore, in all the embodiments described above, the housing 4 introduces pressure fluctuations such as sound from one acoustic hole, but is not limited thereto. The housing 4 may be formed with a structure that regulates two or more intrusion directions, and pressure fluctuations such as sound may be introduced from a plurality of acoustic holes. In this case, for example, a housing having a plurality of intrusion direction regulating structures of the protruding wall portion 25 and the pipe portion 63 may be configured.
By configuring the housing as described above, it is possible for the acoustic detection unit 13 to reach the acoustic detection unit 13 without being affected by excessive pressure fluctuations or environmental factors.

  In all the above-described embodiments, the housing 4 is configured by the substrate 3 having the recess 15 and the substantially plate-like lid member 9, but is not limited thereto, and at least the cavity S and What is necessary is just to have the protrusion wall part 25 and the acoustic holes 71, 73, and 75 which form the penetration direction control structure, or the vibration piece 83 and the elastic films 85 and 89 which form the vibration part. Therefore, the housing 4 may be constituted by, for example, the plate-like substrate 3 in which the concave portion 15 is not formed and the box-shaped lid member 9 in which the concave portion is formed. Further, the protruding wall portion 25 and the acoustic holes 71, 73, and 75 forming the intrusion direction regulating structure, or the vibrating piece 83 and the elastic films 85 and 89 forming the vibrating portion may be formed on the substrate 3, for example.

In the lid installation step, the lid member 9 is arranged so as to cover the microphone chip 5 and the LSI chip 7. However, the present invention is not limited to this, and at least covers the microphone chip 5. What is necessary is just to be distribute | arranged on the mounting surface of the board | substrate 3 so that the cavity S containing this may be formed.
Further, the substrate 3 on which the microphone chip 5 is mounted is configured by a so-called multilayer wiring substrate such as a ceramic substrate, but is not limited thereto, and is configured by sealing a lead frame with a resin mold portion, for example. It is good.

  As mentioned above, although embodiment of this invention was explained in full detail with reference to drawings, the concrete structure is not restricted to this embodiment, The design change etc. of the range which does not deviate from the summary of this invention are included.

1 is a schematic plan view showing a semiconductor device according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view of the semiconductor device of FIG. It is a schematic plan view which shows the semiconductor device which concerns on other embodiment of this invention. FIG. 3 is a cross-sectional view of the semiconductor device of FIG. It is CC sectional view taken on the line of the semiconductor device of FIG. It is a schematic sectional side view which shows the semiconductor device which concerns on other embodiment of this invention. It is a schematic sectional side view which shows the semiconductor device which concerns on other embodiment of this invention. It is a schematic sectional side view which shows the state which has arrange | positioned the semiconductor device which concerns on other embodiment of this invention inside the housing | casing. It is a schematic sectional side view which shows the state which has arrange | positioned the semiconductor device which concerns on other embodiment of this invention inside the housing | casing. It is a schematic sectional side view which shows the state which has arrange | positioned the semiconductor device which concerns on other embodiment of this invention inside the housing | casing. It is a schematic sectional side view which shows the semiconductor device which concerns on other embodiment of this invention. It is a schematic plan view which shows the semiconductor device which concerns on 2nd Embodiment of this invention. It is DD sectional view taken on the line of FIG. It is a schematic plan view which shows the semiconductor device which concerns on other embodiment of this invention. It is EE arrow sectional drawing of the semiconductor device of FIG. It is a schematic plan view which shows the semiconductor device which concerns on other embodiment of this invention. FIG. 17 is a cross-sectional view of the semiconductor device of FIG. It is a schematic plan view which shows the semiconductor device which concerns on 3rd Embodiment of this invention. It is a schematic sectional side view which shows the state which has arrange | positioned the semiconductor device of FIG. 18 inside a housing | casing. FIG. 19 is a schematic side cross-sectional view illustrating a state in which a resonator element vibrates in the semiconductor device of FIG. 18 disposed inside a housing. It is a schematic sectional side view which shows the semiconductor device which concerns on other embodiment of this invention. It is a schematic sectional side view which shows the semiconductor device which concerns on other embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,20,30,40,60,70,80 ... Semiconductor device, 3 ... Board | substrate, 4 ... Housing, 5 ... Microphone chip (semiconductor sensor chip), 9 ... Lid member, 9a ... Back surface (inner surface, one main) Surface), 9b ... surface (outer surface), 13 ... acoustic detection unit, 15a ... bottom surface (mounting surface), 21, 31, 39, 62, 77 ... acoustic hole, 23a, 32a ... cut line, 23b, 32b ... bending line , 25, 33, 37 ... protruding wall part (intrusion direction restriction structure), 41, 42, 43 ... opening hole, 61 ... through hole, 63 ... pipe part (intrusion direction restriction structure), 64 ... communication hole, 71, 73 ... acoustic hole (intrusion direction regulating structure), 75 ... dent, 81 ... cut line, 83 ... vibrating piece, 85 ... elastic film, 87 ... opening hole, 89 ... elastic film, S ... cavity

Claims (11)

A hollow cavity part and a housing having an acoustic hole for communicating the cavity part to the outside, and a semiconductor sensor chip having an acoustic detection part arranged in the housing and detecting pressure fluctuation by vibration,
The semiconductor is characterized in that an intrusion direction regulating structure is formed in the housing to prevent the pressure fluctuation and environmental elements entering the cavity from the acoustic hole from going directly from the acoustic hole to the acoustic detection unit. apparatus. The intrusion direction regulating structure includes a protruding wall portion protruding from the inner surface of the housing;
The semiconductor device according to claim 1, wherein the protruding wall portion is disposed between the acoustic hole and the acoustic detection portion. In the housing, an opening for discharging at least a part of the pressure fluctuation and the environmental element from the cavity portion is formed,
The said projecting wall part is formed so that at least one part of the said pressure fluctuation and the environmental element which entered the said cavity part from the said acoustic hole may be guide | induced to the said opening hole. Semiconductor device. The housing is formed with a score line and a fold line connecting both ends of the score line,
The protruding wall portion is formed by bending at the fold line so as to protrude a region portion surrounded by the cut line and the fold line into the cavity portion,
4. The semiconductor device according to claim 2, wherein a peripheral edge of the acoustic hole is defined by the cut line and the bending line in a state where the protruding wall portion is formed. 5.   2. The semiconductor device according to claim 1, wherein the intrusion direction restricting structure is formed so that the acoustic hole is gradually separated from the semiconductor sensor chip from the outer side of the housing toward the hollow portion. . The housing is formed with a recess that protrudes from the outer surface and protrudes from the inner surface toward the cavity.
The semiconductor device according to claim 1, wherein the intrusion direction restricting structure is formed by forming the acoustic hole in a side wall portion of the hollow portion that does not face the acoustic detection portion. In the housing, a through hole communicating outward from the cavity is formed,
The intrusion direction regulating structure is formed of a tubular pipe portion that is provided in the hollow portion and connects the acoustic hole and the through hole,
The semiconductor device according to claim 1, wherein a communication hole that connects the inside of the pipe portion and the hollow portion is formed in a peripheral wall portion of the pipe portion. A housing having a hollow cavity part, and a semiconductor sensor chip having an acoustic detection part arranged in the cavity part to detect pressure fluctuations by vibrations,
A semiconductor device characterized in that the housing is provided with a vibrating portion that vibrates in accordance with an external pressure fluctuation and propagates the pressure fluctuation based on the vibration to the hollow portion.   The vibrating part is surrounded by a cut line formed in the housing, leaving a connection portion with the housing, and a vibrating piece that is capable of vibrating with respect to the housing, and the housing is configured to cover the cut line. The semiconductor device according to claim 8, further comprising: an elastic film attached to an inner surface or an outer surface and capable of being elastically deformed according to vibration of the vibrating piece.   An opening hole that is formed in the housing and communicates the cavity portion outward, and an elastic membrane that is attached to the inner surface or the outer surface of the housing so as to close the opening hole and is elastically deformable. 9. The semiconductor device according to claim 8, further comprising: A semiconductor device for manufacturing a semiconductor device having a structure in which a semiconductor sensor chip having an acoustic detection portion for detecting a pressure fluctuation by vibration is provided in a housing having a hollow cavity portion and an acoustic hole for communicating the cavity portion outward. A manufacturing method comprising:
A chip mounting step of fixing the semiconductor sensor chip on a mounting surface of the substrate; and a lid member that covers at least the upper side of the semiconductor sensor chip on the mounting surface, and the housing having the cavity together with the substrate. And a lid installation process to form,
Prior to the lid installation step, the lid body is formed such that a notch forming step for forming a linear cut line in the lid member and a fold line connecting both ends of the cut line to the lid member are formed. A state in which the member is subjected to plastic deformation processing, and the region surrounded by the cut line and the bending line is formed as a protruding wall portion protruding from one main surface of the lid, and the protruding wall portion is formed. And a deformation process step using the cut line and the bending line in the peripheral edge of the acoustic hole,
In the lid installation step, the lid body is arranged such that the one main surface faces the mounting surface and the protruding wall portion is disposed between the acoustic detection unit and the previous acoustic hole. A method of manufacturing a semiconductor device, comprising arranging a member.

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