JP2008300500A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the reduction of the connective reliability of a semiconductor device subjected to a flip-chip connection between its semiconductor element and its wiring substrate wherein the filling properties of the sealing resins of the gap between its semiconductor element and its wiring substrate are so made poor in the four corner portions of its semiconductor element as to generate the defections of the sealing resins in the four corner portions of its semiconductor element. <P>SOLUTION: In the structure of the semiconductor device subjected to a flip-chip mounting wherein its semiconductor element and its wiring substrate are connected with each other via a film-form resin sealing, resin protective films are so formed only in the four corner portions of its semiconductor element as to perform the flip-chip mounting, and as a result, the gaps between its semiconductor element and its wiring substrate which are present in the four corner portions of its semiconductor element are so made narrow in comparison with the central portion of its semiconductor-element mounting region as to improve the resin fillings of the four corner portions. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device in which a semiconductor element is flip-chip bonded to a wiring substrate via a sealing resin film, and a method for manufacturing the same.

  As portable information devices and the like become smaller and lighter, semiconductor devices are required to have higher density, size, and thickness. In order to meet these demands, a semiconductor device in which a semiconductor element is mounted in a flip chip system has been developed. However, as a method that can cope with the thinning of the semiconductor element, the semiconductor element is attached to the wiring substrate through a sealing resin film. A flip chip mounting structure for bonding has been proposed.

  Hereinafter, a conventional semiconductor device will be described with reference to the drawings. FIG. 15 shows a conventional semiconductor element, and FIG. 16 shows a conventional semiconductor element mounting wiring board. In each of the semiconductor elements 1 shown in FIGS. 15A and 15B, electrode pads 2 for connecting to a wiring board via bumps are formed on the periphery of the main surface which is a circuit formation surface. Yes. A semiconductor element 1 illustrated in FIG. 15A is a semiconductor element in which a resin protective film is not formed on the main surface of the semiconductor element 1, and the semiconductor element 1 illustrated in FIG. This is a semiconductor element in which a resin protective film 3 is formed at the central part, which is a formation region, and at the four corners of the main surface. The resin protective film 3 is formed for the purpose of protecting the semiconductor element 1 from the impact of the inorganic filler in the sealing resin film interposed between them when the semiconductor element 1 is mounted on the wiring board. When a sealing resin film made of a very fine spherical inorganic filler and having no risk of impact is used, these resin protective films 3 are not necessary, and the semiconductor element 1 shown in FIG. Is possible. Thus, the conventional semiconductor element 1 does not have the resin protective film on the main surface (FIG. 15A), and has the resin protective film 3 on the entire main surface excluding the electrode pads 2 (FIG. 15). Any one of (b)) was used.

  FIG. 16 is a plan view of the wiring board 4 on which the semiconductor element 1 is mounted. As shown in the figure, the wiring substrate 4 has a size larger than the terminal electrode 5, the surface layer wiring 6 and the semiconductor element mounting region 7 connected to the electrode pad 2 of the semiconductor element 1 via bumps on the surface on which the semiconductor element 1 is mounted. An open substrate resin layer 8 is formed. The terminal electrode 5 is exposed in the opening of the substrate resin layer 8, and electrical conduction with the electrode pad 2 of the semiconductor element 1 to be mounted is achieved.

  Next, FIG. 17 is an explanatory view of a conventional flip chip mounting structure, and FIG. 18 is a plan view and a sectional view after mounting. As shown in FIG. 17, the semiconductor element 1 in which the bump 9 is formed on the electrode pad 2 and the wiring substrate 4 in which the sealing resin film 10 having a size larger than the area of the semiconductor element 1 is attached to the opening are formed. It has a structure that is positioned and mounted at opposite positions.

  Specifically, gold ball bumps (also referred to as stud bumps) 9 are formed on the electrode pads 2 of the semiconductor element 1 by using wire bonding technology, and on the wiring substrate 4 side, an arrangement corresponding to the electrode pads 2 is provided. The semiconductor device 1 is mounted on the wiring substrate 4 by forming the terminal electrodes 5 on the substrate and connecting the bumps 9 and the terminal electrodes 5 of the wiring substrate 4 by heat and load through the sealing resin film 10. (Also called pressure welding method). At that time, the sealing resin film 10 is melted by heating, filling the space between the semiconductor element 1 and the wiring board 4 with the sealing resin while extruding excess sealing resin, and then into the sealing resin film 10. It is hardened by the contained hardener. By this sealing resin, the connection between the bump 9 on the electrode pad 2 of the semiconductor element 1 and the terminal electrode 5 of the wiring substrate 4 is firmly maintained.

  In this case, the resin filling property between the semiconductor element 1 and the wiring board 4 and the amount of the resin protruding from the semiconductor element 1 are the gap between the semiconductor element 1 and the wiring board 4 and the size and thickness of the interposed sealing resin film 10. Affected by. The area of the sealing resin film 10 is cut into a size slightly larger than the area of the semiconductor element 1, and the thickness is the volume of the surface layer wiring 6 formed in a convex shape on the wiring substrate 4 in the semiconductor element mounting region 7. Therefore, the sealing resin film 10 having a thickness smaller than the gap amount between the semiconductor element 1 and the wiring substrate 4 after bonding is used. As described above, since the resin protrudes to the periphery of the semiconductor element 1 by mounting, the thickness of the sealing resin film 10 is selected so that the resin protrudes less in order to reduce the size of the semiconductor device. It is necessary to.

For example, Patent Document 1 and Patent Document 2 are known as prior art document information relating to the invention of this application.
International Publication No. 98/30073 pamphlet (Patent No. 3150347) Japanese Patent Laid-Open No. 11-340278

  However, the conventional techniques have the following problems.

  In flip-chip connection using the sealing resin film 10, the bump 9 formed on the electrode pad 2 of the semiconductor element 1 is brought into contact with the terminal electrode 5 of the wiring substrate 4 while being deformed by a load, and simultaneously heated to be sealed. The resin film 10 is dissolved and fluidized, the resin is cured while extruding excess resin around the semiconductor element 1, and the connection between the bump 9 on the electrode pad 2 of the semiconductor element 1 and the terminal electrode 5 of the wiring substrate 4 is maintained.

  In this case, since the sealing resin film 10 is a thin layer of the surface layer wiring 6 formed on the wiring board 4 as described above, when the semiconductor element 1 and the wiring board 4 are connected, The melted sealing resin seals the gap between the semiconductor element 1 and the wiring substrate 4, and then the excess sealing resin is extruded around the semiconductor element 1 and cured. At that time, as shown in FIG. 18A, a sealing resin 11 is formed which is extruded around the semiconductor element 1 and expands in an arc shape. When spreading in an arc shape in this way, the fillet length L, which is the amount of protrusion of the sealing resin 11, increases at the center of each side of the semiconductor element 1, but at the corners of the four corners of the semiconductor element 1, the sealing resin 11 does not spread, and as shown in FIGS. 18 (b) and 18 (c), there is a problem that unfilled or voids are generated and connection reliability is lowered.

  On the other hand, in the case of increasing the resin amount by adjusting the thickness or the like of the sealing resin film 10 in order to increase the resin filling property in the corner portion and prevent such problems, the central portion of each side of the semiconductor element 1 is increased. The fillet length L is increased, and the wiring board 4 is required to have a large size corresponding to the fillet length, which hinders the miniaturization of the semiconductor device.

  Therefore, in order to reduce the size of the semiconductor device, the thickness of the sealing resin film 10 is selected so that the fillet length L of the sealing resin 11 from the central part of each side of the semiconductor element 1 does not increase, and It is necessary to improve the filling property of the resin.

  Cited Document 1 discloses a conventional flip chip mounting technique using a sealing resin film in order to solve the problems of productivity and cost of flip chip mounting. There is no mention of the problem of the filling property of the sealing resin in the portion, and there is a possibility that unfilling or voids may occur in the corner portion.

  Further, in the cited document 2, in order to solve the problem of the filling property of the sealing resin at the corner portion of the semiconductor element, it is a region inside the wiring electrode forming portion of the circuit board and has four corners of the semiconductor element. Although a technique for forming a resin layer in the vicinity has been disclosed, in this reference, a sealing resin sheet having a size smaller than that of a semiconductor element is used, and convex to positions corresponding to four corners of the sealing resin sheet. A resin layer is formed, and convex portions are provided at the four corners of the semiconductor element, and the gap between the semiconductor element and the wiring board at the corner is not reduced. It still has the problem of resin fillability. Further, since the sealing resin sheet is smaller than the semiconductor element, such a sealing resin sheet does not cover the electrode of the semiconductor element and the protruding electrode of the wiring board at the time of bonding, and generates a void around the bonding portion. There is a possibility that the connection reliability is lowered.

  The present invention solves the above-described problems, and provides a flip chip mounting method and a semiconductor device used therefor that can improve connection reliability by completely sealing up to four corners of a semiconductor element and can achieve downsizing. The purpose is to provide.

  The semiconductor device according to the present invention includes a wiring having a semiconductor element having an electrode pad on the periphery of a main surface and a circuit formation region inward of the electrode pad, and a terminal electrode connected to the electrode pad via a bump on the surface. A semiconductor device that is flip-chip connected to a substrate and includes a sealing resin between the main surface of the semiconductor element and the wiring substrate, and between the main surface side of the semiconductor element and the surface side of the wiring substrate The size of the gap existing in the semiconductor element is smaller in the corner portion of the semiconductor element than in the circuit formation region.

  The semiconductor element according to the semiconductor device is characterized in that a resin film is formed only on the upper surface of the corner portion of the main surface of the semiconductor element.

  Alternatively, the semiconductor element according to the semiconductor device is thicker than the first resin film formed on the upper surface of the circuit formation region and the first resin film formed on the upper surface of the corner portion of the semiconductor element. And a second resin film.

  On the other hand, the wiring board according to the semiconductor device has a dummy land at a position corresponding to the corner portion of the semiconductor element on the surface of the wiring board.

  Alternatively, the wiring board according to the semiconductor device has an opening in the mounting region excluding at least a corner portion of the mounting region of the semiconductor element on the upper surface.

  Or it has the following characteristics by the combination of said semiconductor element and a wiring board.

  In the semiconductor device, a resin film is formed only on an upper surface of a corner portion of the main surface of the semiconductor element, and a dummy land is formed on the surface of the wiring board at a position corresponding to the corner portion of the semiconductor element. And

  Alternatively, a resin protection in which a resin film is formed only on an upper surface of a corner portion of the main surface of the semiconductor element, and an opening is provided in the mounting region excluding at least the corner portion of the mounting region of the semiconductor element on the upper surface of the wiring board. A membrane is provided.

  Alternatively, a first resin film is formed on an upper surface of the circuit formation region of the semiconductor element, and a second resin film having a thickness larger than the first resin film is formed on an upper surface of the corner portion of the semiconductor element, and the semiconductor A dummy land is formed on the surface of the wiring board at a position corresponding to the corner portion of the element.

Alternatively, a first resin film on the upper surface of the circuit formation region of the semiconductor element and a second resin film having a thickness greater than the first resin film are formed on the upper surface of the corner portion of the semiconductor element,
A resin protective film having an opening in the mounting region excluding at least a corner portion of the mounting region of the semiconductor element is provided on the upper surface of the wiring board.

  The method of manufacturing a semiconductor device according to the present invention includes: a semiconductor element having an electrode pad around a main surface; and a resin protection having an opening in the mounting region of the semiconductor element so as to expose the terminal electrode and the terminal electrode on the surface. A method of manufacturing a semiconductor device flip-chip connected to a wiring board provided with a film, wherein a sealing resin film is placed in an opening of the resin protective film on the wiring board so as to cover the terminal electrode A step of forming a resin film only on a corner portion of the main surface of the semiconductor element, a step of flip-chip connecting the semiconductor element to the wiring substrate via the sealing resin film, and the sealing resin film It is characterized by comprising a step of resin-sealing the gap between the semiconductor element and the wiring board by heating and flowing.

  Alternatively, a semiconductor element having an electrode pad on the periphery of the main surface, a flip chip on a wiring board having a resin protective film having an opening in the mounting region of the semiconductor element so as to expose the terminal electrode and the terminal electrode on the surface A method for manufacturing a connected semiconductor device, comprising: forming a sealing resin film so as to cover the terminal electrode in an opening of the resin protective film on the wiring board; and a circuit on a main surface of the semiconductor element Forming a first resin film in a formation region and a second resin film having a thickness larger than that of the first resin film in a corner portion; and attaching the semiconductor element to the wiring substrate via the sealing resin film The method includes a flip-chip connection step and a step of resin-sealing a gap between the semiconductor element and the wiring substrate by heating and flowing the sealing resin film.

  Alternatively, a semiconductor element having an electrode pad on the periphery of the main surface, a flip chip on a wiring board having a resin protective film having an opening in the mounting region of the semiconductor element so as to expose the terminal electrode and the terminal electrode on the surface A method of manufacturing a connected semiconductor device, comprising: forming dummy lands at corners of a mounting region of the semiconductor element of the wiring board; and the terminal electrode at an opening of the resin protective film on the wiring board A step of forming a sealing resin film so as to cover, a step of flip-chip connecting the semiconductor element to the wiring substrate via the sealing resin film, and heating and flowing the sealing resin film, And a step of resin-sealing a gap between the semiconductor element and the wiring board.

  Alternatively, a semiconductor element having an electrode pad on the periphery of the main surface, a flip chip on a wiring board having a resin protective film having an opening in the mounting region of the semiconductor element so as to expose the terminal electrode and the terminal electrode on the surface A method for manufacturing a connected semiconductor device, comprising: forming a resin protective film having an opening in the mounting region excluding at least a corner portion of the mounting region of the semiconductor element on an upper surface of the wiring board; A step of placing a sealing resin film on the opening of the resin protective film on the substrate so as to cover the terminal electrode, and flip-chip connection of the semiconductor element to the wiring substrate via the sealing resin film And a step of resin-sealing a gap between the semiconductor element and the wiring board by heating and flowing the sealing resin film.

  According to the present invention, the gap between the four corners of the semiconductor element and the wiring board is thinned, and the volume required for filling the four corners is reduced. As a result, the amount of protrusion is small and the resin at the corner is sufficiently secured, so that the semiconductor device can be miniaturized and the connection reliability can be improved.

  Hereinafter, a first embodiment of the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a plan view of a semiconductor device according to the first embodiment. The semiconductor element 101 shown in FIG. 1 has a structure in which a plurality of electrode pads 102 are arranged on the periphery of the main surface, which is a circuit formation surface, and at least the electrode pads 102 are arranged among the four corners. A resin protective film 103 is formed on the corners that are not.

  The resin protective film 103 is made of, for example, a polyimide material, and has the same size as that of the electrode pad 102 formed in the peripheral portion of the semiconductor element 101 or the electrode pad in the case of a multi-row electrode pad structure. It is formed in the same size as the width of the column. For example, when the pad length of the electrode pad 102 is 100 μm, the size of the resin protective film 103 is about 100 μm square, and when the electrode pad 2 having a pad length of 100 μm is formed in two rows, it is about 200 μm square. You can use a large one. However, this size can be changed depending on the manufacturing process.

  Thus, by forming the resin protective film 103 only at each corner portion of the semiconductor element 101, the semiconductor element is more than the center portion (circuit formation region) of the semiconductor element 101 when mounted on the wiring board by flip chip mounting. The gap between the semiconductor element 101 and the wiring board at the four corners of 101 can be narrowed. Here, each corner portion of the semiconductor element 101 is a portion surrounded by the electrode pads 102 formed in the peripheral portion of the semiconductor element 101.

  Next, the mounting structure and mounting process of the semiconductor element 101 on the wiring board in the first embodiment will be described. 2 is an explanatory view of the mounting structure of the semiconductor device according to the first embodiment, FIG. 3 is an explanatory view of the mounting process, FIG. 4A is a plan view of the mounting body, and FIG. 5 is a cross-sectional view taken along the line XX ′ of FIG.

  In this embodiment, as shown in FIG. 2 and FIGS. 3A and 3B, first, bumps 109 are formed on the electrode pads 102 of the semiconductor element 101 having the electrode pads 102 on the main surface, and the semiconductor element 101. The semiconductor element 101 in which the resin protective film 103 is formed at the corner is used. Further, as shown in FIGS. 2 and 3C, the terminal electrode 105 for electrically connecting to the bump 109 formed on the electrode pad 102 of the semiconductor element 101 and a size larger than the semiconductor element mounting region 107. The sealing resin film 110 is attached to the semiconductor element mounting region 107 in the opening of the substrate resin layer 108 on the surface of the wiring substrate 104 using the wiring substrate 104 having the substrate resin layer 108 opened in step 1 on the surface. This sealing resin film 110 is heated, melted, and cured in a later process, and becomes a sealing resin 111 that seals the gap between the semiconductor element 101 and the wiring substrate 104 and strengthens the connection between the bumps 109.

  Regarding the size of the sealing resin film 110, when the sealing resin film 110 having an area smaller than that of the semiconductor element 101 is used, the sealing resin film 110 is heated and melted, and the bumps 109 are pressure-bonded to the terminal electrodes 105. At this time, it is necessary for the resin to flow so as to surround the periphery of the bump 109, and unfilling is likely to occur around the bump 109, resulting in a decrease in connection stability and generation of voids. It is desirable to use a material slightly larger than the size of the semiconductor element 101 so that the sealing resin film 110 covers the periphery of the bump 109. The sealing resin film 110 is preferably thinner than the gap between the semiconductor element 101 and the wiring board 104 after flip-chip mounting. This is because the surface layer wiring 106 on the wiring substrate 104 exists in a convex shape in the semiconductor element mounting region 107, so that the volume of the surface layer wiring 106 is surplus with respect to the gap between the semiconductor element 101 and the wiring substrate 104.

  Next, as shown in FIG. 3D, the terminal electrode 105 of the wiring substrate 104 to which the sealing resin film 110 is attached and the bump 109 formed on the electrode pad 102 of the semiconductor element 101 are aligned. The semiconductor element 101 is pressed from the back surface, the bump 109 is deformed by a load, joined to the terminal electrode 105 of the wiring board 104, and simultaneously heated, thereby extruding excess resin to the periphery of the semiconductor element 101 and sealing resin. By curing 111, the electrical connection and the connection reinforcement between the bump 109 on the electrode pad 102 of the semiconductor element 101 and the terminal electrode 105 of the wiring substrate 104 are maintained.

  At this time, the thickness of the sealing resin film 110 is such that the volume of the terminal electrode 105 existing in the semiconductor element mounting region 107 of the wiring board 104 and the surface layer wiring 106 connected thereto, and the semiconductor element 101 and the wiring board 104 after flip chip mounting. However, when the semiconductor element 101 is mounted, the sealing resin 111 melted by heating the sealing resin film 110 is once used. It flows inward from the corner of the semiconductor element 101 and then spreads in an arc shape. At this time, when the resin spreads uniformly in an arc shape, the amount of resin reaching the corners of the four corners is reduced. However, the resin protective film 103 provided at the corners reduces the gap between the semiconductor element 101 and the wiring substrate 104 from the other parts. Since it is narrower in comparison, the volume to be filled with the sealing resin 111 at the four corners of the semiconductor element 101 is reduced as shown in FIG. 4B, and as shown in FIG. The sealing resin 111 is sufficiently spread also in the corner portion, and the resin filling property of the corner portion is improved with the same resin amount.

  Accordingly, since the corner portion can be filled without increasing the amount of resin, it is possible to sufficiently ensure the resin filling property of the corner portion while minimizing the fillet length L at the central portion of each side of the semiconductor element 101.

  For example, with reference to FIG. 5, the numerical values are used to describe the gap H between the semiconductor element 101 and the wiring substrate 104 in the circuit formation region of the semiconductor element 101 after mounting, and the semiconductor element 101 and the wiring substrate 104 at the corner portion of the semiconductor element 101. In the relationship of the gap h, when the gap H is about 40 μm, the thickness of the sealing resin film 110 is about 35 μm, which is 5 μm thinner, considering the volume of the surface wiring 106 and the like. At that time, when the resin protective film 103 having a thickness of about 5 μm is formed at the four corners of the semiconductor element 101, the gap h to be sealed with the sealing resin is 35 μm, which is the same as the thickness of the sealing resin film 110. . As a result, a necessary amount of resin in the corner portion can be secured at a minimum. That is, the thickness of the resin protective film 103 is preferably greater than or equal to the difference between the gap H between the semiconductor element 101 and the wiring substrate 104 and the thickness of the sealing resin film 110 in the circuit formation region.

  Further, FIG. 7 shows a mounting structure in the case where the semiconductor element 101 in which the resin protective film 103 is formed on the entire main surface of the semiconductor element 101 excluding the electrode pad 102 shown in FIG. Is shown in FIG.

  Even in such a semiconductor element 101, as shown in FIG. 8, the resin protective film 103 provided in the corner portion is formed thicker than the resin protective film 103 in the central portion (circuit formation region). The same effects as those of the semiconductor device of the embodiment can be obtained.

  That is, in the relationship between the gap H between the semiconductor element 101 and the wiring board 104 in the circuit formation region of the semiconductor element 101 and the gap h between the semiconductor element 101 and the wiring board 104 at the corner portion of the semiconductor element 101, a relationship of H> h. The volume filled with the sealing resin 111 at the corners of the four corners as compared with the circuit forming region is provided by providing a difference in thickness between the resin protective film 103 in the circuit formation region and the resin protective film 103 in the corner portion. The resin filling property at the corner is improved with the same resin amount.

  Furthermore, this allows the corner portion to be filled without increasing the amount of resin, so that the resin fillability of the corner portion can be sufficiently ensured while minimizing the fillet length L at the center of each side of the semiconductor element 101. Become.

  Note that these semiconductor devices obtained by the present technology have a feature that the size of the semiconductor device is not so large as compared with the size of the semiconductor element 101 and is miniaturized.

  Furthermore, in the present embodiment, the case where the electrode pads 102 of the semiconductor element 101 are arranged only in the peripheral portion of the semiconductor element 101 has been described. However, the electrode pads 102 are arranged in a grid pattern on the circuit formation surface of the semiconductor element 101. Even in the case of the area pad array, a similar effect can be obtained by narrowing the gap between the semiconductor element 101 and the wiring substrate 104 at the four corners of the semiconductor element 101.

  Next, a second embodiment will be described based on the drawings.

  FIG. 9 is a plan view of a wiring board according to the second embodiment, and FIG. 10 is a cross-sectional view taken along line X-X ′ of a semiconductor device in which a semiconductor element is mounted on the wiring board shown in FIG. 9. A wiring substrate 104 shown in FIG. 9 has a terminal electrode 105 bonded to a bump of a semiconductor element, a surface layer wiring 106, and a substrate resin layer 108 opened in a size larger than the semiconductor element mounting region 107 on the surface. . The terminal electrode 105 and the surface layer wiring 106 are provided in the opening of the substrate resin layer 108, and dummy lands 112 are formed at the corners of the semiconductor element mounting region 107 corresponding to the four corners of the semiconductor element in the opening. It has a structured. The corner portion of the semiconductor element mounting region 107 is a portion surrounded by the terminal electrodes 105 on the wiring substrate 104.

  Thus, by providing the dummy land 112 on the wiring substrate 104 side, it plays the same role as the protective resin film 103 provided at the corner portion of the semiconductor element 101 in the first embodiment. Note that the dummy land 112 is a wiring that is not electrically connected to the semiconductor element 101 and is formed in the same process as the process of forming the terminal electrode 105 on the wiring substrate 104, so that it is not necessary to add another process. As a material, for example, it is formed of a copper material or the like, and is plated with nickel, gold or the like for preventing oxidation and stabilizing connectivity.

  In FIG. 9, the dummy lands 112 are formed only at the corners of the semiconductor element mounting region 107 of the wiring board 104, but outside the semiconductor element mounting area 107 as long as they are not affected by the routing of the surface layer wiring 106 on the wiring board 104. The size is not regulated. Further, since the dummy land 112 is formed in the same process as the formation of the terminal electrode 105, the thickness thereof is the same as the thickness of the terminal electrode 105.

  For example, with reference to FIG. 10A, a numerical value will be described. After mounting, the gap H between the semiconductor element 101 and the wiring board 104 in the circuit formation region of the semiconductor element 101 and the semiconductor element 101 and the wiring board at the corner of the semiconductor element 101 are described. In the relationship of the gap h of 104, when the gap H is about 40 μm, the thickness of the sealing resin film 110 is about 35 μm, which is 5 μm thinner considering the volume of the surface wiring 106 and the like. At that time, when the dummy lands 112 having a thickness of about 10 μm are formed at the four corners of the semiconductor element mounting region 107 of the wiring substrate 104, the gap h to be sealed with the sealing resin becomes 30 μm, and the sealing resin film 110 It becomes smaller than the thickness. As a result, a necessary amount of resin in the corner portion can be secured at a minimum.

  The dummy land 112 may share any wiring of the terminal wiring 105.

  The structure of the wiring board 104 is such that when the semiconductor element 101 is mounted by flip chip mounting, the gap h between the semiconductor element 101 and the wiring board 104 at the four corners of the semiconductor element 101 is compared with the gap H in the circuit formation region. And make it narrower.

  As a result, since the volume to be filled with the resin at the corner portion is reduced, it is possible to fill the corner portion of the semiconductor element 101 with a small amount of resin, and the fillet at the central portion of each side of the semiconductor element 101. The length L can be reduced, and the semiconductor device can be downsized. Further, connection stability can be obtained by preventing unfilling of the resin.

  Further, FIG. 10B shows a semiconductor device in which the semiconductor element of the first embodiment is mounted on the wiring board shown in FIG. Thus, by forming the dummy land 112 at a position corresponding to the protective resin film 103 formed at the corner portion of the semiconductor element 101 of the wiring substrate 104, the semiconductor element 101 and the wiring substrate 104 at the corner portion of the semiconductor element 101 are formed. The gap h can be further narrowed, and the resin filling property of the corner portion can be improved.

  For example, with reference to FIG. 10B, numerical values will be described. The gap H between the semiconductor element 101 and the wiring substrate 104 in the circuit formation region of the semiconductor element 101 after mounting, and the semiconductor element 101 and the wiring in the corner portion of the semiconductor element 101 are described. In the relationship of the gap h of the substrate 104, when the gap H is about 40 μm, the thickness of the sealing resin film 110 is about 35 μm, which is 5 μm thinner, considering the volume of the surface wiring 106 and the like. At that time, the resin protective film 103 having a thickness of about 5 μm is formed at the four corners of the semiconductor element 101, and the dummy land 112 having a thickness of about 10 μm is formed at the four corners of the semiconductor element mounting region 107 of the wiring substrate 104. The gap h to be sealed with the sealing resin is 25 μm, which is about 10 μm smaller than the thickness of the sealing resin film 110. As a result, a sufficient amount of resin can be secured in the corner portion.

  Next, the mounting process of the semiconductor element on the wiring board in the second embodiment will be described. FIG. 11 is an explanatory diagram of the mounting process of the semiconductor device according to the present embodiment.

  As shown in FIG. 11A, first, the semiconductor element 101 in which the bump 109 is formed on the electrode pad 102 of the semiconductor element 101 having the electrode pad 102 on the main surface is used. Further, as shown in FIG. 11B, the terminal electrode 105 for electrical connection with the bump 109 formed on the electrode pad 102 of the semiconductor element 101 and an opening larger than the semiconductor element mounting region 107 are opened. A wiring substrate 104 having a substrate resin layer 108 on the surface is used. On the surface of the wiring substrate 104, dummy lands 112 are formed at the corners of the semiconductor element mounting region 107 corresponding to the four corners of the semiconductor element simultaneously with the step of forming the terminal electrode 105. Next, as illustrated in FIG. 11C, the sealing resin film 110 is attached to the semiconductor element mounting region 107 in the opening of the substrate resin layer 108 on the wiring substrate 104. This sealing resin film 110 becomes a sealing resin 111 that seals the gap between the semiconductor element 101 and the wiring substrate 104 and strengthens the connection between the bumps 109 by heating, melting, and curing in a later step.

  With respect to the size of the sealing resin film 110, when the sealing resin film 110 having an area smaller than that of the semiconductor element 101 is used, the sealing resin film 110 is heated and melted, and the bump 109 is pressure-bonded to the terminal electrode 105. Since the resin needs to flow around the bump 109, unfilling around the bump 109 is likely to occur, resulting in a decrease in connection stability and generation of voids. It is desirable to use a material slightly larger than the size of the semiconductor element 101 so that the sealing resin film 110 covers the periphery of the bump 109. The sealing resin film 110 is preferably thinner than the gap between the semiconductor element 101 and the wiring board 104 after flip-chip mounting. This is because the surface layer wiring 106 on the wiring substrate 104 exists in a convex shape in the semiconductor element mounting region 107, so that the volume of the surface layer wiring 106 is surplus with respect to the gap between the semiconductor element 101 and the wiring substrate 104.

  Next, as shown in FIG. 11D, the terminal electrode 105 of the wiring substrate 104 to which the sealing resin film 110 is attached and the bump 109 formed on the electrode pad 102 of the semiconductor element 101 are aligned. The semiconductor element 101 is pressed from the back surface, the bump 109 is deformed by a load, joined to the terminal electrode 105 of the wiring board 104, and simultaneously heated, thereby extruding excess resin to the periphery of the semiconductor element 101 and sealing resin. By curing 111, the electrical connection and the connection reinforcement between the bump 109 on the electrode pad 102 of the semiconductor element 101 and the terminal electrode 105 of the wiring substrate 104 are maintained.

  At this time, the thickness of the sealing resin film 110 is such that the volume of the terminal electrode 105 existing in the semiconductor element mounting region 107 of the wiring board 104 and the surface layer wiring 106 connected thereto, and the semiconductor element 101 and the wiring board 104 after flip chip mounting. However, when the semiconductor element 101 is mounted, the sealing resin 111 melted by heating the sealing resin film 110 is once used. It flows inward from the corner of the semiconductor element 101 and then spreads in an arc shape. At that time, when the resin uniformly spreads in an arc shape, the amount of resin that reaches the corners of the four corners is reduced, but the gap between the semiconductor element 101 and the wiring board 104 is compared with other parts by the dummy bumps 112 provided at the corners. 11 (e), the volume filled with the sealing resin at the four corners of the semiconductor element 101 is reduced, and the resin filling property at the corners is improved with the same amount of resin. The

  Accordingly, since the corner portion can be filled without increasing the amount of resin, it is possible to sufficiently ensure the resin filling property of the corner portion while minimizing the fillet length L at the central portion of each side of the semiconductor element 101.

  Furthermore, in the present embodiment, the case where the electrode pads 102 of the semiconductor element 101 are arranged only in the peripheral portion of the semiconductor element 101 has been described. However, the electrode pads 102 are arranged in a grid pattern on the circuit formation surface of the semiconductor element 101. Even in the case of the area pad array, a similar effect can be obtained by narrowing the gap between the semiconductor element 101 and the wiring substrate 104 at the four corners of the semiconductor element 101.

  Next, a third embodiment will be described with reference to the drawings.

  FIG. 12 is a plan view of a wiring board according to the third embodiment, and FIG. 13 is a cross-sectional view of a semiconductor device in which a semiconductor element is mounted on the wiring board shown in FIG. In the wiring substrate 104 shown in FIG. 12, the shape of the opening of the substrate resin layer 108 having an opening in the semiconductor element mounting region 107 is different from that of the second embodiment.

  In the present embodiment, the substrate resin layer 108 is formed to extend at the position of the dummy land 112 in the second embodiment. That is, the portion of the substrate resin layer 108 corresponding to the central portion of each side of the semiconductor element 101 is opened larger than the semiconductor element mounting region 107, but only the four corners of the semiconductor element mounting region 107 are formed. The structure extends to the semiconductor element mounting region 107.

  For example, a numerical value is described with reference to FIG. 13. As shown in FIG. 13A, the gap H between the semiconductor element 101 and the wiring substrate 104 in the circuit formation region of the semiconductor element 101 after mounting and the semiconductor element 101. In the relationship between the gap h between the semiconductor element 101 and the wiring board 104 at the corner portion, when the gap H is about 40 μm, the thickness of the sealing resin film 110 is 35 μm which is 5 μm thinner considering the volume of the surface wiring 106 and the like. It will be about. At this time, since the thickness of the substrate resin layer 108 is about 20 μm, if the substrate resin layer 108 having a thickness of about 20 μm is formed at the four corners of the semiconductor element mounting region 107 of the wiring substrate 104, the substrate resin layer 108 is sealed with a sealing resin. The power gap h is 20 μm, which is about 15 μm smaller than the thickness of the sealing resin film 110. As a result, a sufficient amount of resin in the corner portion can be secured.

  The structure of the wiring board 104 according to the present embodiment is such that when the semiconductor element 101 is mounted by flip chip mounting, the gap h between the semiconductor element 101 at the four corners of the semiconductor element 101 and the wiring board 104 is defined as a circuit formation region. This is narrower than the gap H, and has the same effect as the second embodiment. Furthermore, the wiring board 104 of the present embodiment is effective in that it does not require another process in manufacturing, as long as it extends to the corner when the substrate resin layer 108 is formed.

  Further, FIG. 13B shows a semiconductor device in which the semiconductor element of the first embodiment is mounted on the wiring board shown in FIG. In this manner, the substrate resin layer 108 is formed to extend to a position corresponding to the protective resin film 103 formed at the corner portion of the semiconductor element 101 of the wiring substrate 104, so that the semiconductor element 101 at the corner portion of the semiconductor element 101 is formed. The width of the gap h with respect to the wiring board 104 can be further narrowed, and the resin filling property of the corner portion can be improved.

  For example, with reference to FIG. 13B, numerical values will be described. A gap H between the semiconductor element 101 and the wiring substrate 104 in the circuit formation region of the semiconductor element 101 after mounting, and the semiconductor element 101 and wiring at the corner portion of the semiconductor element 101. In the relationship of the gap h of the substrate 104, when the gap H is about 40 μm, the thickness of the sealing resin film 110 is about 35 μm, which is 5 μm thinner, considering the volume of the surface wiring 106 and the like. At that time, a resin protective film 103 having a thickness of about 5 μm is formed at the four corners of the semiconductor element 101, and a substrate resin layer having a thickness of about 20 μm is formed at the four corners of the semiconductor element mounting region 107 of the wiring substrate 104. When 108 is formed, the gap h to be sealed with the sealing resin is 15 μm, which is about 20 μm smaller than the thickness of the sealing resin film 110. As a result, a sufficient amount of resin can be secured in the corner portion.

  That is, the gap h between the semiconductor element 101 and the wiring board 104 at the corner portion is smaller than the gap H between the semiconductor element 101 and the wiring board 104 in the circuit formation region of the semiconductor element 101, thereby reducing the corners at the four corners. The volume filled with the sealing resin of the portion is reduced, and the resin filling property of the corner portion is improved with the same resin amount.

  Furthermore, this allows the corner portion to be filled without increasing the amount of resin, so that the resin fillability of the corner portion can be sufficiently ensured while minimizing the fillet length L at the center of each side of the semiconductor element 101. Become.

  Furthermore, in the present embodiment, the case where the electrode pads 102 of the semiconductor element 101 are arranged only in the peripheral portion of the semiconductor element 101 has been described. However, the electrode pads 102 are arranged in a grid pattern on the circuit formation surface of the semiconductor element 101. Even in the case of the area pad array, a similar effect can be obtained by narrowing the gap between the semiconductor element 101 and the wiring substrate 104 at the four corners of the semiconductor element 101.

  Next, the mounting process of the semiconductor element on the wiring board in the third embodiment will be described. FIG. 14 is an explanatory diagram of the mounting process of the semiconductor device according to the present embodiment.

  As shown in FIG. 14A, first, the semiconductor element 101 in which bumps 109 are formed on the electrode pads 102 on the main surface of the semiconductor element 101 is used. Further, as shown in FIG. 14B, a wiring substrate 104 having terminal electrodes 105 and a substrate resin layer 108 on the surface for electrical connection with bumps 109 formed on the electrode pads 102 of the semiconductor element 101. Is used. The substrate resin layer 108 has openings larger than the semiconductor element mounting area 107 except for the corners at the four corners of the semiconductor element mounting area 107, and is formed by extending only the corner parts at the four corners of the semiconductor element mounting area 107. ing. Next, as shown in FIG. 14C, the sealing resin film 110 is attached to the semiconductor element mounting region 107 in the opening of the substrate resin layer 108 on the wiring substrate 104 and pressed by the resin film application tool 113 from the back surface. To do. This sealing resin film 110 becomes a sealing resin 111 that seals the gap between the semiconductor element 101 and the wiring substrate 104 and strengthens the connection between the bumps 109 by heating, melting, and curing in a later step.

  When the sealing resin film 110 having a slightly larger area than the semiconductor element 101 is attached to the wiring board 104 according to this embodiment, the substrate resin layer 108 on the wiring board 104 extends to the corner portion of the semiconductor element mounting region 107. Therefore, the substrate resin layer 108 and the sealing resin film 110 overlap at the corner portion. In this case, if the pressing surface of the resin film application tool is flat, there is a level difference corresponding to the thickness of the substrate resin layer 108 at the corner, so that the central portion of the sealing resin film 110 cannot be pressed sufficiently. It will be. Therefore, the resin film sticking tool 113 used in this embodiment has a step at a corner corresponding to a portion where the substrate resin layer 108 and the sealing resin film 110 overlap. According to this, since the sealing resin film can be stably affixed without containing the air layer with the same thickness, the resin filling property between the semiconductor element and the wiring board as a semiconductor device is improved, and connection reliability is improved. It is possible to improve.

  Next, as shown in FIG. 14D, the terminal electrode 105 of the wiring substrate 104 to which the sealing resin film 110 is attached and the bump 109 formed on the electrode pad 102 of the semiconductor element 101 are aligned. The semiconductor element 101 is pressed from the back surface, the bump 109 is deformed by a load, joined to the terminal electrode 105 of the wiring board 104, and simultaneously heated, thereby extruding excess resin to the periphery of the semiconductor element 101 and sealing resin. By curing 111, the electrical connection and the connection reinforcement between the bump 109 on the electrode pad 102 of the semiconductor element 101 and the terminal electrode 105 of the wiring substrate 104 are maintained.

  At this time, the thickness of the sealing resin film 110 is such that the volume of the terminal electrode 105 existing in the semiconductor element mounting region 107 of the wiring board 104 and the surface layer wiring 106 connected thereto, and the semiconductor element 101 and the wiring board 104 after flip chip mounting. However, when the semiconductor element 101 is mounted, the sealing resin 111 melted by heating the sealing resin film 110 is once used. It flows inward from the corner of the semiconductor element 101 and then spreads in an arc shape. At this time, if the resin uniformly spreads in an arc shape, the amount of resin reaching the corners of the four corners decreases, but the gap between the semiconductor element 101 and the wiring substrate 104 is reduced by the substrate resin layer 108 formed to extend to the corners. Since it is narrower than the circuit formation region, the volume filled with the sealing resin 111 at the four corners of the semiconductor element 101 becomes smaller as shown in FIG. The resin filling property is improved.

  Accordingly, since the corner portion can be filled without increasing the amount of resin, it is possible to sufficiently ensure the resin filling property of the corner portion while minimizing the fillet length L at the central portion of each side of the semiconductor element 101.

  Furthermore, in the present embodiment, the case where the electrode pads 102 of the semiconductor element 101 are arranged only in the peripheral portion of the semiconductor element 101 has been described. However, the electrode pads 102 are arranged in a grid pattern on the circuit formation surface of the semiconductor element 101. Even in the case of the area pad array, a similar effect can be obtained by narrowing the gap between the semiconductor element 101 and the wiring substrate 104 at the four corners of the semiconductor element 101.

  The semiconductor device and the manufacturing method thereof of the present invention are useful as a semiconductor device to be bonded by a flip chip method.

The top view of the semiconductor element concerning a 1st embodiment Explanatory drawing of the mounting structure of the semiconductor device concerning a 1st embodiment Explanatory drawing of the mounting process of the semiconductor device which concerns on 1st Embodiment. FIG. 2 is a plan view and a cross-sectional view of the semiconductor device according to the first embodiment. Sectional drawing of the semiconductor device which concerns on 1st Embodiment The top view of the semiconductor element concerning a 1st embodiment Explanatory drawing of the mounting structure of the semiconductor device concerning a 1st embodiment Sectional drawing of the semiconductor device which concerns on 1st Embodiment The top view of the wiring board concerning a 2nd embodiment Sectional drawing of the semiconductor device which concerns on 2nd Embodiment Explanatory drawing of the mounting process of the semiconductor device which concerns on 2nd Embodiment. The top view of the wiring board concerning a 3rd embodiment Sectional drawing of the semiconductor device which concerns on 3rd Embodiment Explanatory drawing of the mounting process of the semiconductor device which concerns on 3rd Embodiment Plan view of conventional semiconductor device Plan view of a conventional wiring board Explanatory drawing of conventional semiconductor device mounting structure Plan view and sectional view of a conventional semiconductor device

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,101 Semiconductor element 2,102 Electrode pad 3,103 Resin protective film 4,104 Wiring board 5,105 Terminal electrode 6,106 Surface layer wiring 7,107 Semiconductor element mounting area 8,108 Substrate resin layer 9,109 Bump 10, 110 Sealing resin film 11, 111 Sealing resin 112 Dummy land 113 Resin film sticking tool

Claims (13)

A semiconductor element having an electrode pad on the periphery of the main surface and a circuit formation region inward of the electrode pad is flip-chip connected to a wiring substrate having a terminal electrode connected to the electrode pad via a bump, A semiconductor device comprising a sealing resin between a main surface of a semiconductor element and the wiring board,
The size of the gap existing between the main surface side of the semiconductor element and the surface side of the wiring board is smaller in the corner portion of the semiconductor element than in the circuit formation region. Semiconductor device. The semiconductor device according to claim 1, wherein a resin film is formed only on an upper surface of a corner portion of a main surface of the semiconductor element. The semiconductor element includes a first resin film formed on an upper surface of the circuit formation region, and a second resin film thicker than the first resin film formed on an upper surface of a corner portion of the semiconductor element. The semiconductor device according to claim 1, comprising: The semiconductor device according to claim 1, wherein the wiring board has a dummy land at a position corresponding to the corner portion of the semiconductor element on the surface of the wiring board. 2. The semiconductor device according to claim 1, further comprising a resin protective film having an opening in the mounting region excluding a corner portion of the mounting region of the semiconductor element on an upper surface of the wiring board. A resin film is formed only on the upper surface of the corner portion of the main surface of the semiconductor element,
The semiconductor device according to claim 1, wherein a dummy land is formed on a surface of the wiring board at a position corresponding to the corner portion of the semiconductor element. A resin film is formed only on the upper surface of the corner portion of the main surface of the semiconductor element,
The semiconductor device according to claim 1, further comprising a resin protective film having an opening in the mounting region excluding at least a corner portion of the mounting region of the semiconductor element on an upper surface of the wiring board. A first resin film formed on an upper surface of the circuit formation region of the semiconductor element and a second resin film thicker than the first resin film formed on an upper surface of the corner portion of the semiconductor element; The semiconductor device according to claim 1, wherein a dummy land is formed on a surface of the wiring board at a position corresponding to the corner portion. A first resin film is formed on an upper surface of the circuit formation region of the semiconductor element, and a second resin film having a thickness larger than that of the first resin film is formed on an upper surface of the corner portion of the semiconductor element;
2. The semiconductor device according to claim 1, further comprising a resin protective film having an opening in the mounting region excluding at least a corner portion of the mounting region of the semiconductor element on an upper surface of the wiring board. A semiconductor element having an electrode pad on the periphery of the main surface was flip-chip connected to a wiring board having a resin protective film having an opening in the mounting area of the semiconductor element so as to expose the terminal electrode and the terminal electrode on the surface. A method for manufacturing a semiconductor device, comprising:
Placing a sealing resin film on the opening of the resin protective film on the wiring board so as to cover the terminal electrode;
Forming a resin film only at the corner of the main surface of the semiconductor element;
Flip chip connecting the semiconductor element to the wiring board through the sealing resin film,
A method of manufacturing a semiconductor device comprising: a step of resin-sealing a gap between the semiconductor element and the wiring substrate by heating and flowing the sealing resin film. A semiconductor element having an electrode pad on the periphery of the main surface was flip-chip connected to a wiring board having a resin protective film having an opening in the mounting area of the semiconductor element so as to expose the terminal electrode and the terminal electrode on the surface. A method for manufacturing a semiconductor device, comprising:
Forming a sealing resin film at the opening of the resin protective film on the wiring board so as to cover the terminal electrode;
Forming a first resin film in a circuit formation region of a main surface of the semiconductor element and a second resin film having a thickness thicker than the first resin film in a corner portion;
Flip chip connecting the semiconductor element to the wiring board through the sealing resin film,
A method of manufacturing a semiconductor device comprising: a step of resin-sealing a gap between the semiconductor element and the wiring substrate by heating and flowing the sealing resin film. A semiconductor element having an electrode pad on the periphery of the main surface was flip-chip connected to a wiring board having a resin protective film having an opening in the mounting area of the semiconductor element so as to expose the terminal electrode and the terminal electrode on the surface. A method for manufacturing a semiconductor device, comprising:
Forming dummy lands at corner portions of the mounting region of the semiconductor element of the wiring board;
Forming a sealing resin film at the opening of the resin protective film on the wiring board so as to cover the terminal electrode;
Flip chip connecting the semiconductor element to the wiring board through the sealing resin film,
A method of manufacturing a semiconductor device comprising: a step of resin-sealing a gap between the semiconductor element and the wiring substrate by heating and flowing the sealing resin film. A semiconductor element having an electrode pad on the periphery of the main surface was flip-chip connected to a wiring board having a resin protective film having an opening in the mounting area of the semiconductor element so as to expose the terminal electrode and the terminal electrode on the surface. A method for manufacturing a semiconductor device, comprising:
Forming a resin protective film having an opening in the mounting region excluding at least a corner portion of the mounting region of the semiconductor element on the upper surface of the wiring board;
Placing a sealing resin film on the opening of the resin protective film on the wiring board so as to cover the terminal electrode;
Flip chip connecting the semiconductor element to the wiring board through the sealing resin film,
A method of manufacturing a semiconductor device comprising: a step of resin-sealing a gap between the semiconductor element and the wiring substrate by heating and flowing the sealing resin film.

Images