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JP2008300570A - Light emitting device - Google Patents

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JP2008300570A
JP2008300570A JP2007144012A JP2007144012A JP2008300570A JP 2008300570 A JP2008300570 A JP 2008300570A JP 2007144012 A JP2007144012 A JP 2007144012A JP 2007144012 A JP2007144012 A JP 2007144012A JP 2008300570 A JP2008300570 A JP 2008300570A
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light
led chip
color conversion
conversion member
phosphor
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Hideyoshi Kimura
秀吉 木村
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Panasonic Electric Works Co Ltd
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Panasonic Electric Works Co Ltd
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Abstract

【課題】蛍光体の温度上昇による蛍光体の発光効率の低下を抑制でき、光出力の高出力化を図れる発光装置を提供する。
【解決手段】LEDチップ10と、LEDチップ10が実装された実装基板20と、LEDチップ10から放射される光によって励起されてLEDチップ10の発光色とは異なる色の光を放射する蛍光体を含有するドーム状の透光性部材からなり実装基板20との間にLEDチップ10を囲む形で配設された色変換部材30とを備える。色変換部材30は、LEDチップ10からの放射光の方向および強度を表す放射光ベクトルrの延長線と当該色変換部材30の内表面31との交点に立てた法線Uへの放射光ベクトルrの正射影rの長さが一定となるように内表面31の形状が設定されている。
【選択図】図1
There is provided a light emitting device capable of suppressing a decrease in luminous efficiency of a phosphor due to a temperature rise of the phosphor and capable of increasing a light output.
An LED chip, a mounting substrate on which the LED chip is mounted, and a phosphor that emits light of a color different from the emission color of the LED chip when excited by light emitted from the LED chip. And a color conversion member 30 disposed between the mounting substrate 20 and the LED chip 10. The color conversion member 30 is a radiated light vector to the normal line U set at the intersection of the extended line of the radiated light vector r representing the direction and intensity of the radiated light from the LED chip 10 and the inner surface 31 of the color conversion member 30. the length of the orthogonal projection r a of r is the shape of the inner surface 31 so as to be constant are set.
[Selection] Figure 1

Description

本発明は、LEDチップ(発光ダイオードチップ)を利用した発光装置に関するものである。   The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

従来から、青色光あるいは紫外光を放射するGaN系のLEDチップとLEDチップから放射された光によって励起されてLEDチップとは異なる発光色の光を放射する波長変換材料としての蛍光体や光吸収体とを組み合わせることにより、白色を含め、LEDチップの発光色とは異なる色合いの光を出す発光装置の研究開発が各所で行われている(例えば、特許文献1)。なお、この種の発光装置は、小型、軽量、省電力といった長所を有し、例えば、小型電球(白熱電球、ハロゲン電球など)の代替の光源、携帯電話の液晶パネル用光源(液晶パネル用バックライト)などとして広く用いられている。   Conventionally, a GaN LED chip that emits blue light or ultraviolet light, and a phosphor or light absorption as a wavelength conversion material that emits light of an emission color different from that of the LED chip when excited by light emitted from the LED chip. Research and development of a light emitting device that emits light of a color different from the light emission color of an LED chip, including white, by combining with a body has been performed in various places (for example, Patent Document 1). Note that this type of light-emitting device has advantages such as small size, light weight, and power saving. For example, a light source that is an alternative to a small light bulb (incandescent light bulb, halogen light bulb, etc.) Light).

また、白色光が得られる発光装置を照明用光源などに使用する場合には、配線基板上に多数の発光装置を並べて実装したLEDユニットを構成し、LEDユニット全体としての光量を増やすことが考えられるが、発光装置の数が増えると製造コストを含めたコストが高くなるとともに、発光装置からの光をスポット状に絞りたい場合などにレンズや反射鏡が大型化してしまうという問題が生じる。   In addition, when using a light emitting device capable of obtaining white light as a light source for illumination, etc., an LED unit in which a large number of light emitting devices are mounted side by side on a wiring board is configured to increase the amount of light as a whole LED unit. However, as the number of light-emitting devices increases, the cost including manufacturing costs increases, and there is a problem that the lens and the reflecting mirror are enlarged when the light from the light-emitting devices is desired to be spotted.

そこで、上述のLEDユニットでは、発光装置の少数化を図りつつ、LEDチップのジャンクション温度が最大ジャンクション温度を超えないように発光装置への投入電力を大きくして所望の光出力を得るようにしているのが一般的である。   Therefore, in the LED unit described above, while reducing the number of light emitting devices, the input power to the light emitting device is increased so as to obtain a desired light output so that the junction temperature of the LED chip does not exceed the maximum junction temperature. It is common.

なお、上記特許文献1には、図3に示すように、LEDチップ10’と、LEDチップ10’が実装された実装基板20’と、実装基板20’との間にLEDチップ10’を囲む形で配設されたドーム状の封止部材40’と、封止部材40’の内表面に形成された蛍光体層からなる色変換層41’とを備えた発光装置が記載されている。   In Patent Document 1, as shown in FIG. 3, the LED chip 10 ′ is enclosed between the LED chip 10 ′, the mounting substrate 20 ′ on which the LED chip 10 ′ is mounted, and the mounting substrate 20 ′. There is described a light emitting device including a dome-shaped sealing member 40 ′ arranged in a shape and a color conversion layer 41 ′ made of a phosphor layer formed on the inner surface of the sealing member 40 ′.

また、従来から、図4に示すように、発光ダイオード110’と、発光ダイオード110’から放射される光によって励起されて発光する蛍光体を含有した蛍光体層からなる色変換層141’を内表面に有し気密封止された透光性のグローブ140’とを備え、発光ダイオード110’が均等拡散の配光曲線を有する構造に形成され、グローブ140’が発光ダイオード110’の配光曲線と略相似する外形形状に形成されてなる電球形LEDランプが提案されている(特許文献2)。
特開2007−49019号公報 特開2005−108700号公報
Conventionally, as shown in FIG. 4, a color conversion layer 141 ′ composed of a light emitting diode 110 ′ and a phosphor layer containing a phosphor that is excited by light emitted from the light emitting diode 110 ′ to emit light is provided. A light-transmitting globe 140 ′ hermetically sealed on the surface, the light emitting diode 110 ′ is formed in a structure having a light distribution curve of uniform diffusion, and the globe 140 ′ is a light distribution curve of the light emitting diode 110 ′. A light bulb-shaped LED lamp formed in an outer shape substantially similar to the above has been proposed (Patent Document 2).
JP 2007-49019 A JP 2005-108700 A

ところで、図3に示した構成の発光装置においては、投入電力を大きくすると、LEDチップ10’から放射される青色光あるいは紫外光の放射エネルギが大きくなり、蛍光体でのストークスシフトによるエネルギ損失に起因した発熱量の総量が大きくなり、色変換層41’の温度が上昇する。   By the way, in the light emitting device having the configuration shown in FIG. 3, when the input power is increased, the radiant energy of blue light or ultraviolet light radiated from the LED chip 10 ′ increases, resulting in energy loss due to Stokes shift in the phosphor. The total amount of heat generated is increased, and the temperature of the color conversion layer 41 ′ increases.

しかしながら、図3に示した構成の発光装置では、ドーム状の封止部材40’の内表面に形成された色変換層41’の端部しか実装基板20’と接していないので、色変換層41’の蛍光体で発生した熱を実装基板20’へ伝熱により効率良く放熱させることができず、蛍光体の温度が上昇して蛍光体の発光効率が低下し、装置全体から出力される光量が低下するという問題があった。ここにおいて、色変換層41’の温度上昇は、実装基板20’から離れている部分であって単位面積当たりの入射光強度が高い部分で特に起こりやすい。   However, in the light emitting device having the configuration shown in FIG. 3, only the end of the color conversion layer 41 ′ formed on the inner surface of the dome-shaped sealing member 40 ′ is in contact with the mounting substrate 20 ′. The heat generated in the phosphor 41 'cannot be efficiently dissipated to the mounting substrate 20' by heat transfer, the phosphor temperature rises and the luminous efficiency of the phosphor decreases, and is output from the entire apparatus. There was a problem that the amount of light decreased. Here, the temperature rise of the color conversion layer 41 ′ is particularly likely to occur at a portion away from the mounting substrate 20 ′ and where the incident light intensity per unit area is high.

そこで、図3に示した構成の発光装置に、上記特許文献2に記載の発光ダイオード110’の配光曲線と色変換層141’の内表面の形状とを略相似形にする技術を適用することが考えられるが、LEDチップ10’から放射される光の配光が不均等配光の場合、色変換層41’の内表面の単位面積当たりの入射光強度が高い部分が実装基板20’から離れたところに生じてしまう。   Therefore, the technology for making the light distribution curve of the light emitting diode 110 ′ and the shape of the inner surface of the color conversion layer 141 ′ described in Patent Document 2 substantially similar to the light emitting device having the configuration shown in FIG. 3 is applied. However, when the light distribution of the light emitted from the LED chip 10 ′ is non-uniform, the portion of the inner surface of the color conversion layer 41 ′ having a high incident light intensity per unit area is the mounting substrate 20 ′. It will occur in the place away from.

本発明は上記事由に鑑みて為されたものであり、その目的は、蛍光体の温度上昇による蛍光体の発光効率の低下を抑制でき、光出力の高出力化を図れる発光装置を提供することにある。   The present invention has been made in view of the above reasons, and an object of the present invention is to provide a light emitting device capable of suppressing a decrease in light emission efficiency of a phosphor due to a temperature rise of the phosphor and increasing a light output. It is in.

請求項1の発明は、LEDチップと、LEDチップが実装された実装基板と、LEDチップから放射される光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を含有するドーム状の透光性部材からなり実装基板との間にLEDチップを囲む形で配設された色変換部材とを備え、色変換部材は、LEDチップからの放射光の方向および強度を表す放射光ベクトルの延長線と当該色変換部材の内表面との交点に立てた法線への放射光ベクトルの正射影の長さが一定となるように内表面の形状が設定されてなることを特徴とする。   The invention of claim 1 includes an LED chip, a mounting substrate on which the LED chip is mounted, and a phosphor that emits light of a color different from the emission color of the LED chip when excited by light emitted from the LED chip. And a color conversion member arranged to surround the LED chip between the mounting substrate and the color conversion member, and the color conversion member represents the direction and intensity of the emitted light from the LED chip. The shape of the inner surface is set so that the length of the orthogonal projection of the emitted light vector to the normal line established at the intersection of the extended line of the emitted light vector and the inner surface of the color conversion member is constant. Features.

この発明によれば、色変換部材は、LEDチップからの放射光の方向および強度を表す放射光ベクトルの延長線と当該色変換部材の内表面との交点に立てた法線への放射光ベクトルの正射影の長さが一定となるように内表面の形状が設定されているので、色変換部材の内表面の単位面積当たりの入射光強度を略一定とすることができ、蛍光体の温度上昇による蛍光体の発光効率の低下を抑制でき、光出力の高出力化を図れる。   According to the present invention, the color conversion member is a radiated light vector to a normal line set at the intersection of an extended line of the radiated light vector representing the direction and intensity of the radiated light from the LED chip and the inner surface of the color conversion member. Since the shape of the inner surface is set so that the length of the orthogonal projection is constant, the incident light intensity per unit area of the inner surface of the color conversion member can be made substantially constant, and the temperature of the phosphor A decrease in the luminous efficiency of the phosphor due to the rise can be suppressed, and the light output can be increased.

請求項1の発明では、蛍光体の温度上昇による蛍光体の発光効率の低下を抑制でき、光出力の高出力化を図れるという効果がある。   According to the first aspect of the invention, it is possible to suppress a decrease in the luminous efficiency of the phosphor due to the temperature rise of the phosphor, and to increase the light output.

(実施形態1)
本実施形態の発光装置は、図1に示すように、LEDチップ10と、LEDチップ10が実装された実装基板20と、LEDチップ10から放射される光によって励起されてLEDチップ10の発光色とは異なる色の光を放射する蛍光体を含有するドーム状の透光性部材からなり実装基板20との間にLEDチップ10を囲む形で配設された色変換部材30と、色変換部材30と実装基板20とで囲まれた空間に充実されLEDチップ10などを封止した封止材(例えば、シリコーン樹脂など)からなるゲル状の封止部(図示せず)とを備えている。
(Embodiment 1)
As shown in FIG. 1, the light emitting device of the present embodiment includes an LED chip 10, a mounting substrate 20 on which the LED chip 10 is mounted, and a light emission color of the LED chip 10 when excited by light emitted from the LED chip 10. A color conversion member 30 comprising a dome-shaped translucent member containing a phosphor that emits light of a color different from that of the LED chip 10 and the mounting substrate 20, and a color conversion member 30 and a gel-like sealing portion (not shown) made of a sealing material (for example, silicone resin) that is filled in a space surrounded by the mounting substrate 20 and seals the LED chip 10 and the like. .

実装基板20は、矩形板状のセラミック基板(例えば、アルミナ基板、窒化アルミニウム基板などの電気絶縁性を有し且つ熱伝導率の高いセラミック基板)からなる絶縁性基板21を用いて形成されており、LEDチップ10の各電極とそれぞれ電気的に接続される2つの配線パターン22,22が形成されている。ここで、各配線パターン22,22は、絶縁性基板21の一表面(図1における上面)と側面と他表面(図1における下面)とに跨って形成されており、各配線パターン22,22のうち側面と他表面とに跨って形成されている部位が外部接続用電極22b,22bを構成している。また、各配線パターン22,22は、Cu膜と当該Cu膜上のAu膜とで構成されている。なお、絶縁性基板21は、セラミック基板に限らず、エポキシ樹脂基板やホーロー基板などを用いてもよい。   The mounting substrate 20 is formed by using an insulating substrate 21 made of a rectangular plate-shaped ceramic substrate (for example, a ceramic substrate having electrical insulation and high thermal conductivity such as an alumina substrate or an aluminum nitride substrate). The two wiring patterns 22 and 22 that are electrically connected to the respective electrodes of the LED chip 10 are formed. Here, each wiring pattern 22, 22 is formed across one surface (upper surface in FIG. 1), side surface, and the other surface (lower surface in FIG. 1), and each wiring pattern 22, 22. Of these, portions formed across the side surface and the other surface constitute the external connection electrodes 22b and 22b. Each of the wiring patterns 22 and 22 includes a Cu film and an Au film on the Cu film. The insulating substrate 21 is not limited to a ceramic substrate, and an epoxy resin substrate, a hollow substrate, or the like may be used.

また、本実施形態の発光装置は、実装基板20における絶縁性基板21の上記他表面の中央部に、LEDチップ10で発生した熱を放熱させるための矩形状の放熱用導体部26が形成されているので、図示しない配線基板に実装する際に、放熱用導体部26を半田からなる接合部を介して配線基板の導体パターンと固着して配線基板と熱結合させることにより、LEDチップ10の温度上昇を抑制することができる。なお、放熱用導体部26は、各配線パターン22,22と同じ材料により形成されている。また、放熱用導体部26は、LEDチップ10よりも平面サイズを大きく設定してある。   Further, in the light emitting device of this embodiment, a rectangular heat radiating conductor portion 26 for radiating heat generated in the LED chip 10 is formed in the central portion of the other surface of the insulating substrate 21 in the mounting substrate 20. Therefore, when mounting on a wiring board (not shown), the heat dissipating conductor part 26 is fixed to the conductor pattern of the wiring board through a joint portion made of solder and thermally coupled to the wiring board, whereby the LED chip 10 Temperature rise can be suppressed. The heat radiating conductor 26 is formed of the same material as the wiring patterns 22 and 22. Further, the heat dissipating conductor portion 26 is set to have a larger planar size than the LED chip 10.

一方、LEDチップ10は、青色の波長域の光を放射するGaN系青色LEDチップであり、結晶成長用基板であるサファイア基板からなるベース基板の一表面側にGaN系化合物半導体材料からなる発光部が形成されており、各電極が金属材料(本実施形態では、Au)からなるバンプ16,16を介して実装基板20の配線パターン22,22と電気的に接続されている。   On the other hand, the LED chip 10 is a GaN-based blue LED chip that emits light in a blue wavelength range, and a light-emitting portion made of a GaN-based compound semiconductor material on one surface side of a base substrate made of a sapphire substrate that is a crystal growth substrate. Each electrode is electrically connected to the wiring patterns 22 and 22 of the mounting substrate 20 via bumps 16 and 16 made of a metal material (Au in this embodiment).

色変換部材30は、シリコーン樹脂のような透光性材料にLEDチップ10から放射される青色光を吸収することで励起されて青色光よりも低エネルギの黄色光を放射する粒子状の黄色蛍光体を含有する透光性部材により構成されている。したがって、本実施形態の発光装置は、LEDチップ10から放射された青色光と黄色蛍光体から放射された黄色光とが色変換部材30の外表面(光出射面)32を通して放射されることとなり、白色光を得ることができる。なお、色変換部材30の材料として用いる透光性材料は、シリコーン樹脂に限らず、例えば、エポキシ樹脂、ガラスなどを採用してもよい。また、色変換部材30の材料として用いる透光性材料に含有させる蛍光体も黄色蛍光体に限らず、色調整や演色性を高めるなどの目的で複数種類の蛍光体を用いてもよく、例えば、赤色蛍光体と緑色蛍光体とを用いることで演色性の高い白色光を得ることができる。ここで、複数種類の蛍光体を用いる場合には必ずしも発光色の異なる蛍光体の組み合わせに限らず、例えば、発光色はいずれも黄色で発光スペクトルの異なる複数種類の蛍光体を組み合わせてもよい。   The color converting member 30 is excited by absorbing blue light emitted from the LED chip 10 in a translucent material such as silicone resin, and emits yellow light having a lower energy than blue light. It is comprised by the translucent member containing a body. Therefore, in the light emitting device of the present embodiment, the blue light emitted from the LED chip 10 and the yellow light emitted from the yellow phosphor are emitted through the outer surface (light emitting surface) 32 of the color conversion member 30. White light can be obtained. The translucent material used as the material of the color conversion member 30 is not limited to the silicone resin, and for example, an epoxy resin, glass, or the like may be employed. Further, the phosphor contained in the translucent material used as the material of the color conversion member 30 is not limited to the yellow phosphor, and a plurality of types of phosphors may be used for the purpose of improving color adjustment and color rendering. White light with high color rendering properties can be obtained by using a red phosphor and a green phosphor. Here, when a plurality of types of phosphors are used, the phosphor is not necessarily a combination of phosphors having different emission colors, and for example, a plurality of types of phosphors having an emission color of yellow and different emission spectra may be combined.

上述の色変換部材30は、開口部の周縁が全周に亘って実装基板20に対して接着剤(例えば、シリコーン樹脂、エポキシ樹脂など)を用いて接着されている。   The color conversion member 30 described above is bonded to the mounting substrate 20 using an adhesive (for example, a silicone resin, an epoxy resin, or the like) over the entire periphery of the opening.

なお、本実施形態の発光装置では、LEDチップ10として、チップサイズが1mm□の高出力タイプのGaN系青色LEDチップを用いているので、LEDチップ10のジャンクション温度が最大ジャンクション温度を超えず且つ所望の光出力が得られるように、LEDチップ10への投入電力を例えば1〜3W程度として用いることになる。   In the light emitting device of the present embodiment, a high output type GaN-based blue LED chip with a chip size of 1 mm □ is used as the LED chip 10, so that the junction temperature of the LED chip 10 does not exceed the maximum junction temperature and The input power to the LED chip 10 is set to about 1 to 3 W, for example, so as to obtain a desired light output.

ところで、色変換部材30は、頂部30aが中空円錐状の形状に形成され、周部30bが球帯状の形状に形成され、頂部30aの下端部と周部30bの上端部とが滑らかに連続している。なお、本実施形態では、色変換部材30の肉厚を0.5mm一定とし、色変換部材30の周部30bの内径を4mm、外径を5mmとしてあるが、これらの数値は一例であって特に限定するものではない。   By the way, the color conversion member 30 has a top portion 30a formed in a hollow conical shape, a peripheral portion 30b formed in a spherical band shape, and a lower end portion of the top portion 30a and an upper end portion of the peripheral portion 30b are smoothly continuous. ing. In this embodiment, the thickness of the color conversion member 30 is constant at 0.5 mm, the inner diameter of the peripheral portion 30b of the color conversion member 30 is 4 mm, and the outer diameter is 5 mm. However, these numerical values are examples. There is no particular limitation.

ここにおいて、色変換部材30とLEDチップ10とは互いの光軸が一致するように配置されており、色変換部材30は、LEDチップ10からの放射光の方向および強度を表す放射光ベクトルrの延長線と当該色変換部材30の内表面31との交点に立てた法線Uへの放射光ベクトルrの正射影rの長さが一定となるように内表面31の形状が設定されている。なお、放射光ベクトルrは、光源であるLEDチップ10の各方向の光強度を矢印の方向と長さで表したものであり、矢の先端の包絡面が配光立体(配光パターン)Dを表している。 Here, the color conversion member 30 and the LED chip 10 are arranged so that their optical axes coincide with each other, and the color conversion member 30 is a radiated light vector r representing the direction and intensity of the radiated light from the LED chip 10. is set the shape of the inner surface 31 so that the length of the orthogonal projection r a of the extension line and the emitted light vector r in the normal U stood at the intersection of the inner surface 31 of the color conversion member 30 is constant ing. The emitted light vector r represents the light intensity in each direction of the LED chip 10 as a light source by the direction and length of an arrow, and the envelope surface at the tip of the arrow is a light distribution solid (light distribution pattern) D. Represents.

以上説明した本実施形態の発光装置では、上述の放射光ベクトルrの延長線と色変換部材30の内表面31との交点に立てた法線Uへの放射光ベクトルrの正射影rの長さが一定となるように色変換部材30の内表面31の形状が設定されているので、色変換部材30の内表面31の単位面積当たりの入射光強度を略一定とすることができ、蛍光体の温度上昇による蛍光体の発光効率の低下を抑制でき、光出力の高出力化を図れる。 Or more light-emitting device of the present embodiment described, the orthogonal projection r a of the radiation vector r in the normal U stood at the intersection of the inner surface 31 of the extension line and the color conversion member 30 of the above-mentioned emitted light vector r Since the shape of the inner surface 31 of the color conversion member 30 is set so that the length is constant, the incident light intensity per unit area of the inner surface 31 of the color conversion member 30 can be made substantially constant, A decrease in the luminous efficiency of the phosphor due to the temperature rise of the phosphor can be suppressed, and an increase in light output can be achieved.

また、本実施形態の発光装置では、色変換部材30の内表面31の全体が1つの球面の一部をなすような形状に形成されている場合(要するに、色変換部材30が中空の半球状に形成されている場合)に比べて、色変換部材30の表面積を大きくすることができ、色変換部材30における蛍光体で発生した熱を色変換部材30の外表面32側から大気中へ効率良く放熱させることができ、蛍光体の温度上昇による発光効率の低下、色ずれ、信頼性低下を抑制できる。   Further, in the light emitting device of this embodiment, when the entire inner surface 31 of the color conversion member 30 is formed in a shape that forms a part of one spherical surface (in short, the color conversion member 30 is a hollow hemisphere). The surface area of the color conversion member 30 can be increased, and the heat generated by the phosphor in the color conversion member 30 is efficiently transferred from the outer surface 32 side of the color conversion member 30 to the atmosphere. The heat can be dissipated well, and a decrease in light emission efficiency, a color shift, and a decrease in reliability due to a temperature rise of the phosphor can be suppressed.

また、本実施形態の発光装置では、上述のように実装基板20における絶縁性基板21として熱伝導率の高いセラミック基板を用いているので、LEDチップ10で発生した熱を効率よく放熱させることができる。   Moreover, in the light emitting device of this embodiment, since the ceramic substrate having high thermal conductivity is used as the insulating substrate 21 in the mounting substrate 20 as described above, the heat generated in the LED chip 10 can be efficiently dissipated. it can.

なお、本実施形態では、実装基板20と色変換部材30とで囲まれた空間がLEDチップ10を封止した封止部により充実されているが、上記空間を空気雰囲気や不活性ガス雰囲気や真空雰囲気としてもよい。   In the present embodiment, the space surrounded by the mounting substrate 20 and the color conversion member 30 is enriched by the sealing portion that seals the LED chip 10. However, the space is filled with an air atmosphere, an inert gas atmosphere, A vacuum atmosphere may be used.

(実施形態2)
図2に示す本実施形態の発光装置の基本構成は実施形態1と略同じであって、LEDチップ10の配光立体(配光パターン)Dの形状が異なり、色変換部材30の形状が相違する。なお、実施形態1と同様の構成要素には同一の符号を付して説明を省略する。
(Embodiment 2)
The basic configuration of the light emitting device of the present embodiment shown in FIG. 2 is substantially the same as that of the first embodiment, the shape of the light distribution solid (light distribution pattern) D of the LED chip 10 is different, and the shape of the color conversion member 30 is different. To do. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

本実施形態におけるLEDチップ10は、配光立体Dの形状が図2に示すような形状となっており、放射角が約45度の方向で光強度が最大となっている。これに対して、色変換部材30は、実施形態1と同様に、LEDチップ10からの放射光の方向および強度を表す放射光ベクトルの延長線と当該色変換部材30の内表面31との交点に立てた法線への放射光ベクトルの正射影の長さが一定となるように内表面31の形状が設定されており、周部30bが頂部30aに近づくにつれて開口面積が徐々に大きくなるテーパ筒状に形成され、頂部30aがLEDチップ10側に凸となる形で緩やかに湾曲した形状に形成されている。   In the LED chip 10 according to the present embodiment, the shape of the light distribution solid D is as shown in FIG. 2, and the light intensity is maximum in the direction where the emission angle is about 45 degrees. On the other hand, in the color conversion member 30, as in the first embodiment, the intersection of the extended line of the emitted light vector representing the direction and intensity of the emitted light from the LED chip 10 and the inner surface 31 of the color conversion member 30. The shape of the inner surface 31 is set so that the length of the orthogonal projection of the radiated light vector to the normal line standing at a constant angle is set, and the opening area gradually increases as the peripheral portion 30b approaches the top portion 30a. It is formed in a cylindrical shape, and the top portion 30a is formed in a gently curved shape so as to protrude toward the LED chip 10 side.

しかして、本実施形態の発光装置では、実施形態1の発光装置と同様に、色変換部材30の内表面31の単位面積当たりの入射光強度を略一定とすることができ、蛍光体の温度上昇による蛍光体の発光効率の低下を抑制でき、光出力の高出力化を図れる。   Thus, in the light emitting device of this embodiment, as in the light emitting device of Embodiment 1, the incident light intensity per unit area of the inner surface 31 of the color conversion member 30 can be made substantially constant, and the temperature of the phosphor A decrease in the luminous efficiency of the phosphor due to the rise can be suppressed, and the light output can be increased.

ところで、上述の各実施形態では、LEDチップ10として、発光色が青色の青色LEDチップを採用しているが、LEDチップ10の発光色は青色に限らず、例えば、紫外光でもよい。また、各実施形態では、LEDチップ10におけるベース基板としてサファイア基板を採用しているが、ベース基板はサファイア基板に限らず、SiC基板などでもよい。また、ベース基板は、結晶成長用基板に限らず、結晶成長後に発光部と接合したSi基板などでもよい(この場合には結晶成長用基板を除去する)。また、各実施形態では、LEDチップ10が実装基板20に対してフリップ実装されているが、ボンディングワイヤを用いた実装構造を採用してもよい。   By the way, in each above-mentioned embodiment, although the blue LED chip whose luminescent color is blue is employ | adopted as LED chip 10, the luminescent color of LED chip 10 is not restricted to blue, For example, ultraviolet light may be sufficient. Moreover, in each embodiment, although the sapphire substrate is employ | adopted as a base substrate in LED chip 10, a base substrate is not restricted to a sapphire substrate, A SiC substrate etc. may be sufficient. Further, the base substrate is not limited to the crystal growth substrate, and may be a Si substrate or the like bonded to the light emitting portion after crystal growth (in this case, the crystal growth substrate is removed). In each embodiment, the LED chip 10 is flip-mounted on the mounting substrate 20, but a mounting structure using a bonding wire may be adopted.

実施形態1の発光装置の概略断面図である。1 is a schematic cross-sectional view of a light emitting device according to Embodiment 1. FIG. 実施形態2の発光装置の概略断面図である。6 is a schematic cross-sectional view of a light emitting device according to Embodiment 2. FIG. 従来例を示す発光装置の概略断面図である。It is a schematic sectional drawing of the light-emitting device which shows a prior art example. 他の従来例を示す発光装置の概略断面図である。It is a schematic sectional drawing of the light-emitting device which shows another prior art example.

符号の説明Explanation of symbols

10 LEDチップ
20 実装基板
30 色変換部材
30a 頂部
30b 周部
31 内表面
32 外表面
D 配光立体
r 放射光ベクトル
正射影
U 法線
DESCRIPTION OF SYMBOLS 10 LED chip 20 Mounting board 30 Color conversion member 30a Top part 30b Peripheral part 31 Inner surface 32 Outer surface D Light distribution solid r Radiation vector r a Orthographic U Normal

Claims (1)

LEDチップと、LEDチップが実装された実装基板と、LEDチップから放射される光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を含有するドーム状の透光性部材からなり実装基板との間にLEDチップを囲む形で配設された色変換部材とを備え、色変換部材は、LEDチップからの放射光の方向および強度を表す放射光ベクトルの延長線と当該色変換部材の内表面との交点に立てた法線への放射光ベクトルの正射影の長さが一定となるように内表面の形状が設定されてなることを特徴とする発光装置。   A dome-like light-transmitting material including an LED chip, a mounting substrate on which the LED chip is mounted, and a phosphor that emits light of a color different from the emission color of the LED chip when excited by light emitted from the LED chip And a color conversion member disposed between the mounting substrate and the LED chip so as to surround the LED chip, and the color conversion member includes an extension line of a radiated light vector representing the direction and intensity of the radiated light from the LED chip; A light-emitting device, wherein the shape of the inner surface is set so that the length of the orthogonal projection of the emitted light vector to the normal line set at the intersection with the inner surface of the color conversion member is constant.
JP2007144012A 2007-05-30 2007-05-30 Light emitting device Pending JP2008300570A (en)

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