JP2008248301A - Vapor deposition apparatus and vapor deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic light emitting element production apparatus which materializes high material utilization efficiency without losing the uniformity of film thickness even in long-term vapor deposition. <P>SOLUTION: A vapor deposition apparatus for producing an organic light emitting element is equipped with an organic compound layer on a substrate 1 having an electrode, wherein a film thickness correction plate 23 arranged between a vapor deposition source 20 and the substrate 1 is relatively moved in an X direction with respect to the substrate 1 together with the vapor deposition source 20. Since the opening 23a of the film thickness correction plate 23 has a drum shape whose opening width changes along the Y direction orthogonal to the X direction, the vapor deposition time of the obliquely incident components of the vapor deposition material in the opening edge parts is increased, and film thickness is uniformized. Further, by providing the periphery of the opening 23a of the film thickness correction plate 23 with a tilted surface 23b, a change in the opening dimensions caused by the sticking of the evaporated material to the periphery of the opening 23a is suppressed. In this way, a prescribed film thickness distribution can be stably obtained. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an evaporation apparatus and an evaporation method used for manufacturing an organic light emitting element.

  FIG. 10 is a process diagram showing a general method for producing an organic light-emitting element (organic EL) used in an organic EL display device. First, a conductive film having a high reflectance is formed on a substrate 101 such as a glass substrate, and the anode electrode 102 is formed by patterning the conductive film into a predetermined shape. Next, an element isolation film 103 made of a highly insulating material is formed so as to surround the pixel 101 a on the anode electrode 102. As a result, the adjacent pixels 101 a are partitioned by the element isolation film 103. Next, a hole transport layer 104, an organic light emitting layer 105, an electron transport layer 106, and an electron injection layer 107 are sequentially formed on the substrate surface including the anode electrode 102 by an evaporation method. A plurality of organic light emitting elements are formed on the substrate 101 by laminating the cathode electrode 108 made of a transparent conductive film on the electron injection layer 107.

  Finally, the plurality of organic light emitting elements on the substrate are covered with a sealing layer (not shown) made of a material having low moisture permeability. In the vapor deposition of each organic compound layer, a mask having an opening other than the non-deposition region in the substrate surface is used. In particular, in the case of an organic EL display device that displays full color, it is necessary to form elements that emit red, green, and blue light on the substrate. Therefore, the vapor deposition material is applied separately for each element using a mask provided with a pattern portion opening at a position corresponding to a predetermined pixel.

  In an organic light emitting device that produces a display by active matrix driving, it is necessary to provide a TFT (Thin Film Transistor) in advance on the substrate and to electrically connect the drain electrode of the TFT and the cathode electrode of the organic light emitting device.

  Next, a vapor deposition method for vapor-depositing the organic compound layer of the organic light emitting element described above will be described.

  In a general organic EL manufacturing apparatus (evaporation apparatus), a substrate is disposed in a vacuum chamber (deposition chamber), and an evaporation source is disposed below the substrate. The vapor deposition material evaporates isotropically from the opening corresponding to the evaporation port of the vapor deposition source with the axis along the normal direction of the opening surface as the central axis, and flies in a vacuum and adheres to the substrate surface. When the deposition source is brought closer to the substrate, the amount per unit time that the deposition material adheres to the substrate, that is, the deposition rate increases, but the difference between the distance from the deposition source to the center of the substrate and the distance from the substrate edge widens and is constant. In the period, the film thickness distribution of the deposited film attached to the substrate surface becomes large.

  On the other hand, since the light emission characteristics of an organic light emitting element strongly depend on the film thickness of the organic compound layer constituting the element, it is not acceptable as a process condition to form a large film thickness distribution in the substrate surface. For this reason, in the above-described conventional manufacturing apparatus, the organic light-emitting element must be manufactured under film forming conditions in which the distance between the substrate and the vapor deposition source is sufficiently widened. As a result, the material utilization efficiency, which is the ratio of the material adhering to the substrate with respect to the total evaporated material, becomes very low, and the deposition rate also decreases.

  For this reason, the manufacturing cost is high and the throughput during mass production is low. In addition, the equipment cost increases with the increase in size of the manufacturing apparatus.

On the other hand, for example, according to the method disclosed in Patent Document 1, the film thickness correction plate, which is an opening member provided with a film thickness correction opening, is disposed between the vapor deposition source and the substrate, thereby reducing the film thickness. The deposition rate can be increased without impairing the uniformity. In Patent Document 1, a vapor deposition film having a uniform film thickness distribution is obtained by forming an opening of a film thickness correction plate so that only a component that is incident on the substrate substantially perpendicularly from the material flying from the vapor deposition source is passed. It is said.
JP 2005-158571 A

  However, the method disclosed in Patent Document 1 also has a problem in that the material utilization efficiency is sacrificed. This is because the spatial distribution of the velocity vector of the material evaporated from the deposition source is not necessarily the component perpendicular to the substrate. It is also difficult to reduce the proportion of the vapor deposition material that adheres to other than the substrate. As another problem, in the above-described conventional technique, when the vapor deposition is continued for a long time, an evaporant deposits on the periphery of the opening of the film thickness correction plate, and this deposit flies toward the substrate. It becomes an obstacle of the vapor deposition material, and the opening dimension of the film thickness correction plate changes with time. For example, assuming that the distance between the substrate and the evaporation source is 250 mm, the distance between the film thickness correction plate and the substrate is 100 mm, and the opening dimension of the film thickness correction plate changes by 1 μm, the film deposition position deviation on the substrate is 1.7 μm. It becomes. Usually, in an organic EL display compatible with high-definition display corresponding to 150 to 200 ppi, since the total allowable film position deviation is targeted at about 5 μm, this 1.7 μm is a relatively large class as an error factor. In addition, since such positional deviation changes with time, it may cause a decrease in yield.

  The present invention realizes a uniform film thickness of the organic compound layer, a high deposition rate and material utilization efficiency, and suppresses the deposition position deviation even in a long-time deposition, and can stabilize the film thickness distribution. An object is to provide an apparatus and a vapor deposition method.

  In order to achieve the above object, a vapor deposition apparatus according to the present invention includes a vapor deposition source disposed in a film formation chamber, a film disposed between the vapor deposition source and the film formation substrate, and deposited on the film formation substrate. An opening member having an opening for correcting the film thickness distribution of the film, and a mask having a pattern portion for transferring to the vapor deposition region of the film formation substrate, and a periphery of the opening of the opening member Is provided with an inclined surface inclined in the surface direction of the opening member.

  By designing the aperture shape of the aperture member in accordance with the evaporation rate distribution, the non-uniformity of the deposition rate is compensated, and the uniformity of the film thickness distribution of the film deposited on the deposition target substrate is obtained. Thereby, a high-quality organic light-emitting element with high material utilization efficiency can be manufactured. In addition, by providing an inclined surface at the periphery of the opening of the opening member, it is possible to suppress a change in the opening dimension due to the deposition material adhering to the periphery of the opening even when vapor deposition is performed for a long time. Can be stably maintained.

  The best mode for carrying out the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic sectional view showing a vapor deposition apparatus according to an embodiment. This apparatus is used for manufacturing an organic electroluminescence element (organic light emitting element), for example. In the vacuum chamber (deposition chamber) E, the mask 10 is brought into contact with the element isolation film 3 on the substrate 1 which is a deposition substrate having electrodes, and the organic compound (deposition material) of the evaporation source 20 is passed through the mask 10. To deposit on the substrate. Between the vapor deposition source 20 and the substrate 1, a film thickness correction plate 23, which is an opening member provided with an opening 23a for correcting the film thickness distribution of the deposited film (organic compound layer), is disposed. The film thickness correction plate 23 is moved in the X direction (first direction) by the moving stage 24 as moving means together with the vapor deposition source 20 and the heater 21. After the organic compound evaporated from the vapor deposition source 20 flies into the vacuum with a certain spread, the organic compound within the range of the angle θ with respect to the normal direction of the opening surface of the vapor discharge opening of the vapor deposition source 20 is formed into a film. It passes through the opening 23 a of the thickness correction plate 23 and adheres to the substrate 1. This angle θ corresponds to the maximum value of the incident angle of the organic compound incident on the substrate 1.

  Even when the organic compound evaporated from the evaporation source 20 is deposited on the periphery of the opening 23a of the film thickness correction plate 23, the film thickness correction plate 23 is prevented from being obstructed by the deposit. An inclined surface 23b inclined in the surface direction is provided.

  It is desirable that the inclination angle Ψ of the inclined surface 23b be set to be equal to or larger than the maximum value (angle θ) of the incident angle to the substrate 1.

The vapor deposition source 20 is a point source, and the point source is provided with a heater 21 for heating the vapor deposition material. The vapor deposition source 20 and the film thickness correction plate 23 move relative to the substrate 1 in the X direction indicated by the arrow or in the opposite direction. A mask 10 having a pattern portion to be transferred to a predetermined vapor deposition region of the substrate 1 is disposed on the vapor deposition source side of the substrate 1 so as to be in contact with or close to the substrate 1. In FIG. 1, the mask 10 is disposed so as to be substantially in contact with the upper surface of the element isolation film 3 provided on the substrate 1. The substrate 1 and the mask 10 are held by the substrate holding mechanism 30 disposed on the back surface of the substrate 1, and the inside of the vacuum chamber E is exhausted to about 1 × 10 ⁻⁴ to 1 × 10 ⁻⁵ Pa by the exhaust system.

  FIG. 2 is a perspective view showing a positional relationship among the vapor deposition source 20, the film thickness correction plate 23, the mask 10, and the substrate 1. The center position of the opening surface of the vapor deposition source 20 is arranged so as to face the center position where the opening width in the X direction of the opening 23a of the film thickness correction plate 23 is the narrowest.

  As shown in FIG. 3, the opening 23a of the film thickness correction plate 23 is a pattern opening having a drum-like opening shape, and the opening width Wc at the center of the opening is narrower than the opening width We at the opening end. This opening shape is symmetric in the Y direction (second direction) orthogonal to the X direction.

  Next, the opening shape of the film thickness correction plate 23 will be described in detail.

  Deposition source 20 is a point source, and a case where one kind of organic compound is evaporated will be described. Since the organic compound evaporated from the point source is dispersed in a vacuum according to the cosine law, the film thickness distribution on the substrate surface is formed concentrically. For this reason, the film thickness tends to decrease from the center of the substrate 1 toward the outer edge. That is, when the center position of the opening surface of the vapor deposition source 20 is disposed so as to face the center of the substrate surface, the vapor deposition rate decreases along the direction from the substrate center toward the substrate edge.

  When the substrate 1 continues to deposit while moving in the X direction with respect to the deposition source 20, the film thickness l at a certain coordinate (X1, Y1) of the substrate surface is determined by the deposition rate V as the deposition time as shown in the equation (1). It corresponds to the value integrated by t.

l = ∫V dt (1)
When the deposition source 20 having a constant deposition rate moves relative to the substrate 1 at a constant rate, the film thickness in the X direction is substantially uniform. On the other hand, since the film thickness distribution conforms to the cosine law described above in the Y direction, time correction is required.

  Therefore, as shown in FIG. 3, the opening width in the X direction of the opening 23a of the film thickness correction plate 23 is gradually widened away from the center of the opening along the Y direction so that the deposition rate is relatively low. The pattern shape is such that the deposition time can be long at the opening end.

  Specifically, assuming that the moving speed of the vapor deposition source 20 is s, the vapor deposition speed Vc at the center of the opening, the vapor deposition time tc, the opening width Wc in the X direction, the vapor deposition speed Ve at the opening end, the vapor deposition time te, X It is set so that the following relationship is established between the opening widths We in the direction.

tc = Wc / s
te = We / s
∫Vc dt [0, tc] = ∫Ve dt [0, te] (2)

In FIG. 3, the time change of the film thickness at the time of vapor deposition at each point of H ₁ , H ₂ , and H ₃ in the opening 23a of the film thickness correction plate 23 is shown in the graph of FIG. Since the magnitude relationship of the average deposition rate at each point is H ₃ <H ₂ <H ₁ , the deposition time required for deposition to reach a predetermined film thickness is H ₁ <H ₂ <H. ₃

  Therefore, at the position corresponding to the center of the evaporation rate distribution of the vapor deposition source 20, the opening width of the opening 23a is the smallest and is changed so as to expand outward. As described above, the incident angle of the vapor deposition material passing through the opening 23a of the film thickness correction plate 23 with respect to the substrate 1 is the smallest, and the incident angle is increased at the opening end of the film thickness correction plate 23. Is deposited on the substrate 1 to make the film thickness distribution uniform.

  By using a film thickness correction plate having such an opening shape, a film having a uniform film thickness distribution can be formed even when the deposition source is close to the substrate, so that high material utilization efficiency can be obtained. .

  Since it is not necessary to reduce the deposition rate with the increase in size of the substrate, high throughput can be achieved. In addition, since it is possible to deposit a wider surface with one deposition source than in the conventional example, an increase in the number of deposition sources accompanying an increase in the size of the substrate can be suppressed.

  If the evaporation rate distribution of the material evaporated from the deposition source is concentric or concentric ellipse with the axis in the normal direction of the opening surface of the deposition source as the central axis, a film thickness correction plate for increasing material utilization efficiency The opening shape can be uniquely designed.

  The shape of the evaporation rate distribution of the vapor deposition source may not be strictly concentric with respect to the center of the vapor deposition source, and may be a distribution shape that does not substantially impair material utilization efficiency. Within that range, the concentric evaporation rate distribution described here may have some circles that are not true circles, or some circles that are centered out of the concentric axes created by other circles. included.

  The structure of the vapor deposition source, the number of vapor deposition sources, the type of organic compound, the opening shape of the pattern portion of the mask, etc. are not particularly limited. For example, a Knudsen cell or a valve cell can be used as the evaporation source. Moreover, the opening shape of the vapor deposition source may be a dot shape or a linear shape. Further, the vapor deposition source may be a co-deposition source that vapor-deposits a plurality of organic compound layers simultaneously.

  FIG. 5 schematically shows the case where two vapor deposition sources are used. Thus, when a plurality of vapor deposition sources are arranged in the Y direction, a film thickness correction plate having the same number of openings as the vapor deposition source may be used, or a film thickness correction plate having a plurality of openings continuously formed. It may be used.

  In the present embodiment, the case where the vapor deposition source and the film thickness correction plate move relative to the substrate has been described, but even if the relative positional relationship between the vapor deposition source, the film thickness correction plate and the substrate is constant, It is effective to provide an inclined surface at the periphery of the opening of the film thickness correction plate.

  The end face shape of the opening of the film thickness correction plate is set in consideration of the arrangement of the evaporation sources, the number of evaporation sources, and the evaporation rate distribution. As shown in FIG. 6 (a), an inclined surface 23c inclined toward the vapor deposition source as shown in FIG. (C), the structure provided with the two inclined surfaces 23d and 23e inclined to the vapor deposition source side and the board | substrate side may be sufficient. Alternatively, as shown in FIG. 6D, an inclined surface 23f in which only a part of the end surface of the opening 23a is inclined may be used.

  The opening shape of the pattern part of a mask should just respond | correspond to a desired vapor deposition pattern. For example, in order to fabricate an organic EL display device that displays a full color, when depositing a vapor deposition material for each pixel, it may be configured as shown in FIGS.

As described above, the organic compound enters the substrate 1 almost perpendicularly from the opening (pattern part) 11 of the mask 10 at the position H ₁ facing the vicinity of the opening center of the film thickness correction plate 23 shown in FIG. The film to be deposited does not have a region that is a shadow of the opening 11 of the mask 10. However, since the organic compound that has passed through the position H ₃ corresponding to the opening end portion of the film thickness correction plate 23 is obliquely incident on the substrate 1, a region that is a shadow of the opening portion 11 of the mask 10 is formed. It is necessary not to create the light emitting area of the pixels arranged on the substrate 1. Therefore, in order to configure such that the opening area of the opening 11 becomes narrower in the thickness direction from the deposition source side to the substrate side, an angle φ is formed around the opening 11 of the mask 10 as shown in FIG. The taper is provided.

Alternatively, as shown in FIG. 8, the opening 11 of the mask 10 corresponding to the opening end side of the film thickness correction plate 23 has its center position P ₁ as the pixel center of the substrate 1 (center position of each pixel) P _0. Is shifted by ΔP so that the shadowed portion of the opening 11 of the mask 10 is formed outside the element. That is, an area where the opening pitch P of the mask 10 is smaller than the pixel pitch by ΔP is provided by slightly shifting the center of the opening of at least a part of the mask in the Y direction from the center of the pixel at the corresponding position.

  Further, the mask is configured such that the opening area of the mask becomes narrower from the deposition source side toward the substrate side, and at least a part of the opening center of the mask is slightly shifted in the Y direction from the center of the pixel at the corresponding position. It may be configured.

  Thus, the film thickness distribution of the organic compound deposited on the substrate can be made more uniform, and the luminance unevenness and the viewing angle characteristic variation of the organic EL display device can be suppressed.

  An organic light emitting device was manufactured by a vapor deposition apparatus having the configuration shown in FIG. A film thickness correction plate 23 having a thickness of 0.5 mm was disposed between the vapor deposition source 20 and the substrate 1, and the vapor deposition source 20 and the film thickness correction plate 23 were simultaneously moved in the direction of the arrow while the substrate 1 was fixed. The opening width in the X direction of the opening 23a of the film thickness correction plate 23 has a distribution along the Y direction and expands from the center of the opening toward the opening end as shown in FIGS. The central position of the opening 23 a of the film thickness correction plate 23 is arranged so as to correspond to the center of the vapor deposition source 20. Further, an inclined surface 23b having an inclination angle Ψ is provided on the periphery of the opening 23a of the film thickness correction plate 23. The inclination angle Ψ is 5 ° wider than the angle θ which is the maximum incident angle.

  Using this apparatus, an organic light emitting device was fabricated on a 400 mm × 500 mm substrate 1.

  The substrate 1 was arranged so that its longitudinal direction was parallel to the X direction, and the distance between the vapor deposition source 20 and the substrate 1 was 350 mm. The film thickness correction plate 23 has an opening shape with a length H in the Y direction of 410 mm, an opening width in the X direction with an opening width Wc = 150 mm at the position facing the center of the vapor deposition source 20, and the widest opening in the same direction. A drum-shaped pattern with an opening width We = 550 mm at the end was used.

  Next, a manufacturing process of the organic light emitting element will be described. First, an anode electrode was formed on a substrate 1 provided with a TFT. Next, an element isolation film 3 disposed between the pixels was formed. Thereafter, vacuum baking was performed to dehydrate the water contained in the element isolation film 3, and the substrate 1 was once cooled and then subjected to UV / ozone cleaning. Subsequently, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer were sequentially stacked by an evaporation method. In addition, in vapor deposition of the organic compound layer used as an organic light emitting layer, the mask 10 corresponding to each color was used, and it painted separately for every pixel.

  A transparent conductive film was formed thereon as a cathode electrode. The moving speed of the vapor deposition source 20 and the film thickness correction plate 23 was 20 mm / sec.

  The film thickness distribution in the substrate surface of the organic compound layer obtained by the above process was ± 5% or less.

  Moreover, the process yield which shows the ratio of the quantity deposited on the board | substrate 1 with respect to the total evaporation during the period from the start to the completion of vapor deposition on the board | substrate 1 was about 12%. Further, even when vapor deposition is performed for a long time, since the inclined surface 23b is provided in the opening 23a of the film thickness correction plate 23, it is possible to sufficiently suppress the change in the opening size of the film thickness correction plate 23 due to the adhering of the evaporant. It was possible to maintain the above-mentioned characteristics stably. As a result, the yield during mass production could be improved.

(Comparative Example 1)
An organic compound was vapor-deposited in the same manner as in Example 1 using a film thickness correction plate having an opening shape that allows only a component incident substantially perpendicularly to the substrate to pass therethrough. When only the vertical component is used for the vapor deposition as the incident component, the distance between the substrate and the vapor deposition source needs to be wider than that of the first embodiment in order to make the film thickness distribution of the vapor deposition film uniform. For example, in the same manner as in Example 1, in a 400 mm × 500 mm size substrate, the distance between the substrate and the evaporation source when obtaining a film thickness distribution of ± 5% or less is required to be 1000 mm or more, and the process yield at this time is 0.1 %. Moreover, the period required for vapor deposition was about 8.6 times of Example 1. Further, when the evaporation was continued for a long time, the evaporated material was deposited on the periphery of the opening of the film thickness correction plate, and the opening size was changed. This changed the film thickness distribution of the film deposited on the substrate over time.

  An organic light emitting device was manufactured using a vapor deposition apparatus having the configuration shown in FIG. A 400 mm × 500 mm substrate 1 was used and arranged so that its short direction was parallel to the X direction, and the distance between the vapor deposition source 20 and the substrate 1 was 280 mm. Further, the vapor deposition source 20 and the film thickness correction plate 23 having a thickness of 0.5 mm arranged at two locations are fixed in position, and the substrate 1 is moved, and the opening 23 a of the film thickness correction plate 23 corresponds to each vapor deposition source 20. Thus, two places were provided. The end surface (periphery) of each opening 23a has an inclined surface 23c inclined toward the vapor deposition source as shown in FIG. 6B, and the inclination angle Ψ is about 60 °. The inclined surface 23c was polished so that the surface roughness Ra <100 nm.

  At this time, the opening shape of the film thickness correction plate 23 is 260 mm in the length in the Y direction, the opening width in the X direction is 160 mm at a position facing the center of the vapor deposition source 20, and 310 mm at the widest opening end in the same direction. The drum-like. An organic light emitting device was produced in the same manner as in Example 1 under the above conditions. The moving speed of the substrate 1 was 20 mm / sec.

  The film thickness distribution in the substrate surface of the organic compound layer obtained by the above method was ± 5% or less. The process yield was about 12%. By setting the number of vapor deposition sources to two, the vapor deposition process was completed with about a half of the tact time compared to Example 1.

  In addition, even when vapor deposition was performed for a long time, since the inclined surface was provided in the opening of the film thickness correction plate, it was possible to sufficiently suppress the change in the opening size of the film thickness correction plate due to the adhesion of the evaporated material. As a result, the above-mentioned characteristics were stably maintained, and the yield during mass production could be improved. Furthermore, by smoothing the inclined surface of the film thickness correction plate, organic compounds adhering to the film thickness correction plate can be removed in a short time. I was able to shorten the tact. Further, since the cleaning strength can be reduced, damage to the film thickness correction plate in the cleaning process can be suppressed, and the number of reuses of the film thickness correction plate can be increased.

(Comparative Example 2)
An organic compound was vapor-deposited by the same method as in Example 2 using a film thickness correction plate having an opening shape that allows only a component incident substantially perpendicularly to the substrate to pass therethrough. Even when two vapor deposition sources are used and only a vertical component is used for vapor deposition as an incident component, the distance between the substrate and the vapor deposition source needs to be wider than that in the first embodiment in order to make the film thickness distribution uniform. For example, in the same manner as in Example 1, in a 400 mm × 500 mm size substrate, the distance between the substrate and the evaporation source when obtaining a film thickness distribution of ± 5% or less is required to be 450 mm or more, and the process yield at this time is 0.1 %. Moreover, the period required for vapor deposition was about 2.6 times that of Example 1. Further, when the vapor deposition was continued for a long time, the evaporated material was accumulated in the opening of the film thickness correction plate, and the opening size was changed. This changed the film thickness distribution of the film deposited on the substrate over time.

  Using a substrate 1 of 400 mm × 500 mm, the substrate 1 is arranged so that the longitudinal direction of the substrate 1 is parallel to the X direction, and φ = about 15 ° on the end face of each opening 11 of the mask 10 as shown in FIG. The taper was provided. By providing the taper angle in the mask 10 in this way, the incident angle limited to obtain a uniform film thickness distribution is relaxed compared to the case where there is no taper. For this reason, compared with Example 1, the distance of a vapor deposition source and a board | substrate can be shortened. In this example, the distance between the vapor deposition source and the substrate was 250 mm. A film thickness correction plate 23 having a thickness of 1 mm is used, and the cross-sectional shape of the opening 23a is such that the inclination angle ψ1 of the downward inclined surface 23d and the upward inclined surface 23f are as shown in FIG. The inclination angles Ψ2 are substantially equal to about 60 °. Except for the above, an organic light emitting device was manufactured using a vapor deposition apparatus having the same configuration as in Example 1.

  The film thickness distribution in the substrate surface of the organic compound layer obtained by the above method was ± 5% or less, and the process yield was about 12%. Moreover, since the distance between the substrate and the vapor deposition source was shortened as compared with Example 1, the vapor deposition rate could be increased by 1.25 times. In accordance with this, the deposition process was completed with a tact of about 4/5 compared to Example 1. In addition, even when vapor deposition is performed for a long time, since the inclined surface is provided in the opening of the film thickness correction plate, the change in the opening size of the film thickness correction plate due to the adhesion of the evaporant can be sufficiently suppressed, and the above-described characteristics Was able to be maintained stably. As a result, the yield during mass production could be improved.

  In the same manner as in Example 3, a 400 mm × 500 mm substrate was used so that its longitudinal direction was parallel to the X direction, and the distance between the evaporation source and the substrate was 250 mm. A film thickness correcting plate having a thickness of 1 mm was used, and the cross-sectional shape of the opening 23a was as shown in FIG. The inclination angle ψ1 of the downward inclined surface 23d of the opening 23a and the inclination angle ψ2 of the upward inclined surface 23f are substantially equal to about 60 °.

Further, as shown in FIG. 8, the opening 11 of the mask 10 is provided with a taper of about 15 °. Further, the opening pitch of the mask 10 was adjusted in the mask plane so that it shifted by ΔP = 10 μm from the pixel center P ₀ on the substrate 1 at the end of the opening 23 a of the film thickness correction plate 23. The center of the opening 23a of the film thickness correction plate 23 was not shifted.

  As a result, compared to the case where there is no shift, in the Y direction of the substrate surface, the area where the shadow of the opening 11 of the mask 10 is created outside the light emitting region can be made wider. For this reason, the opening width of the film thickness correction plate 23 could be widened compared to Example 3. The opening width Wc at the center of the opening was set to 170 mm, and other dimensions were determined according to the equation (2). Except for the above, an organic light emitting device was manufactured using a vapor deposition apparatus having the same configuration as in Example 1.

  The film thickness distribution in the substrate surface of the organic compound layer obtained by the above method was ± 5% or less, and the process yield was about 14%. Moreover, since the distance between the substrate and the vapor deposition source was shortened as compared with Example 1, the vapor deposition rate could be increased by 1.25 times. In accordance with this, the deposition process was completed with a tact of about 4/5 compared to Example 1. In addition, even when vapor deposition is performed for a long time, since the inclined surface is provided in the opening of the film thickness correction plate, it is possible to sufficiently suppress the change in the opening size of the film thickness correction plate due to the adhesion of the evaporant. The characteristics could be maintained stably. As a result, the yield during mass production could be improved.

  An organic light emitting device was manufactured by a vapor deposition apparatus having the configuration shown in FIG. In this vapor deposition apparatus, two vapor deposition sources 20 are arranged in order to deposit two different vapor deposition materials on the same region of the substrate 1. Each vapor deposition source 20 is maintained in a slightly inclined state with respect to the normal direction of the substrate surface, and the evaporation material evaporated from each vapor deposition source 20 is set so as to be uniformly mixed in the immediate vicinity of the substrate surface. ing. Further, a film thickness correction plate 23 having a thickness of 0.5 mm is disposed between the two vapor deposition sources 20 and the substrate 1, and the two vapor deposition sources 20 and the film thickness correction plate 23 are simultaneously moved while the substrate 1 is fixed. .

  In the present embodiment, the distance between the substrate 1 and the opening 23a of the film thickness correction plate 23 is made close in order to make the integrated film thickness of the evaporation material evaporated from the two vapor deposition sources 20 uniform in the surface of the substrate 1. The distance was about 10 mm. The opening 23a of the film thickness correction plate 23 has an X-direction opening width distributed along the Y direction, and spreads from the center of the opening toward the opening end as shown in FIGS. The opening 23a of the film thickness correction plate 23 is provided with an inclined surface 23b that is inclined at an inclination angle ψ. The inclination angle Ψ was about 60 °. Except for the above, an organic light emitting device was manufactured using a vapor deposition apparatus having the same configuration as in Example 1.

  The film thickness distribution in the substrate surface of the organic compound layer obtained by the above process was ± 5% or less. Moreover, the process yield which shows the ratio of the quantity deposited on the board | substrate 1 with respect to the total evaporation during the period from the start to the completion of vapor deposition on the board | substrate 1 was about 12%. In addition, even when vapor deposition is performed for a long time, since the inclined surface is provided in the opening of the film thickness correction plate, it is possible to sufficiently suppress the change in the opening size of the film thickness correction plate due to the adhesion of the evaporant. The characteristics could be maintained stably. As a result, the yield during mass production could be improved.

1 is a schematic cross-sectional view showing a vapor deposition apparatus according to Example 1. FIG. It is a model perspective view for demonstrating arrangement | positioning of the film thickness correction plate of the apparatus of FIG. It is a top view which shows the opening shape of a film thickness correction board. It is a graph which shows the relationship between the vapor deposition time of an organic compound, and a film thickness. 6 is a schematic perspective view showing a vapor deposition apparatus according to Example 2. FIG. It is a figure which shows the cross-sectional shape of opening of a film thickness correction board. 6 is a schematic cross-sectional view showing a vapor deposition method according to Example 3. FIG. 6 is a schematic cross-sectional view for explaining a vapor deposition method according to Example 4. FIG. 6 is a schematic cross-sectional view showing a vapor deposition apparatus according to Example 5. FIG. It is process drawing which shows the general manufacturing method of an organic light emitting element.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate 10 Mask 20 Evaporation source 21 Heater 23 Film thickness correction plate 23a Opening 23b, 23c, 23d, 23e, 23f Inclined surface 24 Moving stage

Claims (9)

A deposition source disposed in the film formation chamber;
An opening member provided between the vapor deposition source and the film formation substrate and having an opening for correcting a film thickness distribution of a film deposited on the film formation substrate;
A mask provided with a pattern portion for transferring to the vapor deposition region of the deposition substrate,
The vapor deposition apparatus characterized in that a peripheral surface of the opening member is provided with an inclined surface inclined in the surface direction of the opening member.   The vapor deposition apparatus according to claim 1, wherein a part of the inclined surface does not face the vapor deposition source.   The evaporation source and the opening member have moving means for moving in a first direction relative to the substrate and the mask, and the opening of the opening member is a second orthogonal to the first direction. The vapor deposition apparatus according to claim 1, wherein the vapor deposition apparatus has an opening width in the first direction that changes along the direction of the first direction.   4. The opening width of the opening of the opening member is narrowest at a position corresponding to the center of the evaporation rate distribution of the vapor deposition source, and widens toward the outside of the evaporation rate distribution. Vapor deposition equipment.   5. The vapor deposition apparatus according to claim 3, wherein the evaporation rate distribution is concentric or concentric with the axis in the normal direction of the opening surface of the vapor deposition source as a central axis. In a vapor deposition method for vapor-depositing an organic compound layer of an organic light-emitting element on a plurality of pixels arranged on a deposition target substrate having electrodes,
Via an opening member having an opening for correcting the film thickness distribution, and a mask having a pattern portion for transferring the organic compound evaporating from the deposition source to the deposition region of the deposition target substrate, A step of depositing on a deposition substrate;
A vapor deposition method, comprising an inclined surface inclined in a surface direction of the opening member at a peripheral edge of the opening of the opening member. Moving the deposition source and the opening member relative to the deposition target substrate and the mask in a first direction;
The vapor deposition method according to claim 6, wherein the opening of the opening member has an opening width in the first direction that varies along a second direction orthogonal to the first direction.   The vapor deposition method according to claim 6, wherein an opening area of the pattern portion of the mask becomes narrower in a thickness direction of the mask from the vapor deposition source side toward the substrate side.   The vapor deposition method according to claim 6, wherein in a part of the mask, a center position of the pattern portion and a center position of each pixel are shifted in the second direction.

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