JP2008130706A - Manufacturing method of semiconductor device - Google Patents

Abstract

The productivity of a semiconductor device having a heat dissipation structure is improved.
A method of manufacturing a semiconductor device according to the present invention includes a step of bonding a heat dissipation plate 9 using a heat dissipation resin 8 on a surface of a semiconductor substrate 1 on which an element circuit is formed, and a step of attaching the heat dissipation plate 9 to the semiconductor substrate 1. After the heat sink 9 is cut into a chip size with a dicing blade 10 in a bonded state, the semiconductor substrate 1 is cut into a chip size with a thinner blade 11 so that the chip 1 ′ together with the heat sink 9 from the semiconductor substrate 1 is cut. And cutting it into individual pieces.
[Selection] Figure 3

Description

  The present invention relates to a method for manufacturing a semiconductor device having a heat dissipation structure.

  Some semiconductor chips typified by LSI (Large Scale Integration) chips generate heat at a high temperature during driving. For this reason, in order to efficiently release the heat generated in the semiconductor chip to the outside, a package structure of a semiconductor device including a heat radiating member such as a heat spreader or a heat sink is known (see, for example, Patent Document 1).

  On the other hand, a three-dimensional stacked type semiconductor device having a chip-on-chip structure using a through electrode is also known. This type of semiconductor device is also known as SIP (System in Package) in which a plurality of semiconductor chips constituting a CPU (Central Processing Unit), a memory, and the like are mounted in a single package and systemized.

  As a method for manufacturing a three-dimensional stacked semiconductor device (SIP), a method called a wafer support system is known (for example, see Non-Patent Document 1). In this method, when a through electrode is formed in the state of a silicon wafer as a semiconductor substrate, the semiconductor substrate is thinned by backside grinding for the purpose of shortening the processing time of the through electrode and facilitating electrode formation, and accompanying this Handling problems such as reduced substrate strength and handling are eliminated by attaching a support material to the semiconductor substrate.

  10 to 12 are process diagrams showing an example of a conventional method for manufacturing a semiconductor device. First, as shown in FIG. 10A, a circuit layer 51 including element circuits, a through electrode 52, a connection electrode 53, and the like are formed on the main surface side of a semiconductor substrate 50 made of a silicon wafer or the like in a wafer processing step. .

  Next, as shown in FIG. 10B, after forming solder bumps 54 on the connection electrodes 53, the main surface of the semiconductor substrate 50 is covered so as to cover the solder bumps 54 as shown in FIG. A support material 56 is pasted through the adhesive layer 55. Here, a transparent glass substrate is used as the support material 56.

  Next, as shown in FIG. 11A, after the semiconductor substrate 50 is thinned by grinding the back surface of the semiconductor substrate 50, the end of the through electrode 52 is exposed on the back surface of the semiconductor substrate 50. As shown in FIG. 11B, an insulating film 57 and a connection electrode 58 are formed on the back surface of the semiconductor substrate 50. Next, as shown in FIG. 11C, a semiconductor chip 59 such as an LSI chip is flip-chip mounted on the back surface of the semiconductor substrate 50.

  Next, as shown in FIG. 12A, a liquid underfill resin 60 is injected (filled) between the semiconductor substrate 50 and the semiconductor chip 59 (gap) and cured. Next, after reducing the adhesive force of the adhesive layer 55 by irradiating the adhesive layer 55 with ultraviolet rays (for example, light having a wavelength of 365 nm) through the support material 56, as shown in FIG. The support material 54 is peeled off from the main surface of the semiconductor substrate 50 together with the adhesive layer 55. Next, by cutting the semiconductor substrate 50 with a dicing apparatus or the like, the semiconductor chip 59 and the semiconductor chip 61 having a chip-on-chip structure are cut out from the semiconductor substrate 50 and separated into pieces as shown in FIG. .

  The process for reducing the adhesive strength of the adhesive layer 55 includes a process for applying a solvent in which the adhesive is soluble, in addition to the irradiation with ultraviolet rays. In addition, in the case of applying a solvent, there is also a method using a support material having a large number of through holes in order to spread the solvent efficiently over the entire adhesive layer 55 (see, for example, Patent Document 2). There is also a method in which after the semiconductor substrate is thinned with the support material attached, a through hole is formed from the back surface side of the semiconductor substrate and a through electrode is formed by metal embedding plating or the like.

  When a heat dissipation member is provided in a semiconductor device obtained by such a manufacturing method, for example, as shown in FIG. 13, a semiconductor chip 61 is mounted on a double-sided wiring board 62 with bumps via solder bumps 54 and double-sided. After the underfill resin 63 is injected between the wiring substrate 62 and the semiconductor chip 61 (gap) and cured, the two semiconductor chips 59 and 61 having a laminated structure are surrounded on the double-sided wiring substrate 62. The heat spreader 64 is attached by adhesion or the like.

JP 2000-349178 A Sanyo Electric Co., Ltd., Tokyo Ohka Kogyo Co., Ltd., “Succeeded in joint development of wafer support system suitable for through electrode process”, [online], September 12, 2005, [October 18, 2006] Day search], Internet <URL: http://www.sanyo.co.jp/koho/hypertext4/0509news-j/0912-1.html> JP 2005-191550 A

  However, the conventional method for manufacturing a semiconductor device has a problem in that productivity is low because it is necessary to attach a heat radiating member such as a heat spreader to each chip after the chips are cut out from the semiconductor substrate and separated into individual pieces.

  The present invention has been made to solve the above-described problems, and a main object thereof is to provide a semiconductor device manufacturing method capable of improving the productivity when manufacturing a semiconductor device having a heat dissipation structure as compared with the prior art. There is to do.

  According to a first aspect of the present invention, there is provided a method for manufacturing a semiconductor device, comprising: attaching a heat sink on a surface of a semiconductor substrate on which an element circuit is formed; and attaching the heat sink to the semiconductor substrate. And cutting the chip together with the heat radiating plate from the substrate into individual pieces.

  In the method for manufacturing a semiconductor device according to claim 1 of the present invention, a semiconductor device with a heat sink is obtained when the semiconductor substrate is separated into pieces.

  According to a second aspect of the present invention, there is provided a method of manufacturing a semiconductor device, the step of flip-chip mounting a semiconductor chip on a first surface of a semiconductor substrate on which an element circuit is formed, and the semiconductor on the first surface of the semiconductor substrate. The method includes a step of pasting a heat sink through a chip, and a step of cutting out a chip together with the heat sink from the semiconductor substrate in a state where the heat sink is pasted.

  In the method for manufacturing a semiconductor device according to claim 2 of the present invention, when the semiconductor substrate is divided into pieces, a three-dimensional stacked semiconductor device with a heat sink is obtained.

  According to a third aspect of the present invention, there is provided a method of manufacturing a semiconductor device including a step of performing a predetermined process on the second surface side of the semiconductor substrate in a state where the heat radiating plates are bonded together.

  In the method for manufacturing a semiconductor device according to claim 3 of the present invention, the heat sink can be used as a support material.

  According to the method for manufacturing a semiconductor device according to claim 1 of the present invention, when manufacturing a semiconductor device having a heat dissipation structure, a semiconductor device with a heat dissipation plate is provided without attaching a heat dissipation member for each chip as in the prior art. can get. For this reason, the productivity of the semiconductor device can be improved as compared with the prior art.

  According to the method for manufacturing a semiconductor device according to claim 2 of the present invention, when manufacturing a semiconductor device having a heat dissipation structure, a semiconductor device with a heat dissipation plate can be obtained without attaching a heat dissipation member for each chip as in the prior art. can get. Further, when manufacturing a three-dimensional stacked type semiconductor device, it is not necessary to peel the support material from the semiconductor substrate. Therefore, the productivity of the semiconductor device can be improved as compared with the conventional case.

  According to the method for manufacturing a semiconductor device according to claim 3 of the present invention, in manufacturing a three-dimensional stacked type semiconductor device, a back surface processing process of the semiconductor substrate can be performed while using the heat sink as a support material. .

  Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings. In the embodiment of the present invention, the same reference numerals are assigned to the corresponding parts for explanation.

[First Embodiment]
1 to 3 are process diagrams showing a first embodiment of a method of manufacturing a semiconductor device according to the present invention. First, in the wafer processing step, a semiconductor substrate is prepared in which a circuit layer including an element circuit such as an LSI, wiring, bumps (for example, solder bumps) to be protruding electrodes are formed on the main surface. For example, a silicon wafer can be used as the semiconductor substrate.

  As shown in FIGS. 1A and 1B, the semiconductor substrate 1 has a plurality of effective element regions 2 that are finally cut out as chips. The effective element region 2 is a region where an element circuit such as an LSI, wiring, electrodes, and the like are formed, and is partitioned in a lattice shape according to the chip size. The chip is cut out from the semiconductor substrate 1 in a square or rectangular planar shape. Therefore, each effective element region 2 is divided into a square or a rectangle according to the shape and size of the chip.

  The semiconductor substrate 1 has an ineffective region 3 in addition to the effective element region 2. The invalid region 3 is a region where an element circuit or the like is not formed, and is positioned so as to surround the effective element region 2. The invalid area 3 is an area that is cut out when a chip is cut out from the semiconductor substrate 1. A plurality of bumps 4 are formed in the effective element region 2, but no bumps 4 are formed in the invalid region 3.

  The bumps 4 are formed on the main surface of the semiconductor substrate 1 as connection terminals for external connection. The number and arrangement of the bumps 4 in the effective element region 2 can be arbitrarily changed. For example, the bumps 4 may be disposed only on the outer periphery of the effective element region 2, or the bumps 4 may be disposed on the entire effective element region 2. The invalid region 3 is a region excluding the effective element region 2 in the entire region of the semiconductor substrate 1. For this reason, the invalid region 3 exists not only in the linear boundary portion (portion called street) surrounding each effective element region 2 but also in the peripheral portion of the semiconductor substrate 1.

  When the semiconductor substrate 1 with such bumps is prepared, as shown in FIG. 2A, a bump forming surface is formed on the adhesive sheet 6 stretched on the frame 5 having an opening that is slightly larger than the semiconductor substrate 1. The semiconductor substrate 1 is attached with the main surface facing downward. As a result, the semiconductor substrate 1 is held by the frame 5 via the adhesive sheet 6.

  Next, as shown in FIG. 2 (B), the back surface of the semiconductor substrate 1 is ground by a grinder 7 to reduce the thickness of the semiconductor substrate 1 to, for example, about 100 to 300 μm. The back surface of the semiconductor substrate 1 has a front-back relationship with the main surface of the semiconductor substrate 1 described above. Therefore, the back surface of the semiconductor substrate 1 ground by the grinder 7 is a surface on which an element circuit such as an LSI is not formed.

  Next, as shown in FIG. 2C, the semiconductor substrate 1 and the heat dissipation plate 9 are bonded to each other by attaching a heat dissipation plate 9 to the back surface of the semiconductor substrate 1 via a heat dissipation resin 8. The heat radiating resin 8 functions as a heat conductive layer between the semiconductor substrate 1 and the heat radiating plate 9 in addition to the function as an adhesive for bonding the semiconductor substrate 1 and the heat radiating plate 9 together. The heat radiation resin 8 may be applied to the semiconductor substrate 1 side before the substrates are bonded together, or may be applied to the heat dissipation plate 9 side. As the heat radiating resin 8, for example, an epoxy resin whose thermal conductivity is improved by mixing powder (filler) such as metal or alumina can be used.

  The radiator plate 9 has a disk shape similar to that of the semiconductor substrate 1. The external dimensions (diameter) of the heat sink 9 are set so that the plurality of effective element regions 2 shown in FIG. 1 are all covered with a single heat sink 9. For this reason, the outer dimension of the heat sink 9 is the same as the outer dimension of the semiconductor substrate 1 to be bonded. The equivalent external dimensions include both the case where the external dimensions are the same and the case where the external dimension difference is within ± 10% (assuming the external dimension of the semiconductor substrate 1 is 100%). As the heat sink 9, for example, a metal plate such as copper can be used as a material having high heat dissipation. Further, a strong ceramic plate or the like can be used as the heat radiating plate 9.

  Next, as shown in FIGS. 3A and 3B, the heat radiating plate 9 was cut (diced) into the chip size with the blade 10 of the dicing apparatus while the semiconductor substrate 1 was adhered to the adhesive sheet 6. Thereafter, the semiconductor substrate 1 is cut into a chip size with a blade 11 thinner than the previous one, so that chips are cut out from the semiconductor substrate 1 together with the heat sink 9 into individual pieces.

  In this singulation process, as shown in FIG. 1, along the boundary line (street) that divides each effective element region 2 into a quadrangle (square or rectangle) within the surface of the semiconductor substrate 1. Then, the heat sink 9 and the semiconductor substrate 1 are cut. As a result, as shown in FIG. 3C, the semiconductor device 12 is obtained in a state where the heat sink 9 is attached to the back surface of the semiconductor chip 1 ′ cut out from the semiconductor substrate 1.

  Regarding the cutting of the heat sink 9, for example, when a copper plate is used as the heat sink 9, taking into account blade clogging and the occurrence of burrs on the copper plate, for example, the PIA series (trade name) manufactured by DISCO CORPORATION It is desirable to use a coarse count (about 600). Further, since the blade 11 is inserted into the groove portion formed when the heat sink 9 is cut by the blade 10 and the semiconductor substrate 1 is cut, the thickness of the blade 10 can allow the blade 11 to be inserted. The thickness is set (for example, about 0.5 mm).

  The semiconductor device 12 obtained by such a manufacturing method is, for example, mounted on a mounting board (not shown) (a glass epoxy circuit board, a silicon interposer board, etc.) by flip chip bonding, and then injected and cured with an underfill resin. Is used in a state where the joint is sealed.

  In the semiconductor device manufacturing method described above, the heat sink 9 is attached to the semiconductor substrate 1, and the semiconductor chip 1 'is cut out together with the heat sink 9 from the semiconductor substrate 1 in this state. When separated into individual pieces, the semiconductor device 12 with a heat sink is obtained. For this reason, when manufacturing a semiconductor device having a heat dissipation structure, it is not necessary to attach a heat dissipation member for each chip.

  In the first embodiment, the heat sink 9 and the semiconductor substrate 1 are sequentially diced with the semiconductor substrate 1 with bumps attached to the adhesive sheet 6. After the heat sink 9 is bonded to the semiconductor substrate 1, the adhesive strength of the adhesive sheet 6 is reduced by ultraviolet irradiation to peel the adhesive sheet 6 from the semiconductor substrate 1, and then the semiconductor substrate 1 is on the adhesive sheet (not shown). The heat sink 9 may be attached in this manner, and the semiconductor substrate 1 and the heat sink 9 may be diced sequentially.

[Second Embodiment]
4 to 9 are process diagrams showing a second embodiment of a method of manufacturing a semiconductor device according to the present invention. First, in the wafer processing step, two semiconductor substrates are prepared by forming element circuits such as LSI, wiring, bumps (for example, solder bumps) to be protruding electrodes, etc. on the main surface. In this case, the function of the element circuit formed on one semiconductor substrate is different from that of the element circuit formed on the other semiconductor substrate. For example, an element circuit formed on one semiconductor substrate has a function as a CPU, and an element circuit formed on the other semiconductor substrate has a function as a memory.

  Each semiconductor substrate has a plurality of effective element regions and other ineffective regions, as in the first embodiment. In addition, a through electrode is formed in advance on one semiconductor substrate in a wafer processing step. The through electrode may be formed, for example, by forming a through hole in a semiconductor substrate by silicon etching or the like and then coating the inner surface of the through hole with an oxide film and then embedding the through hole with a metal such as copper. . However, at this stage, the through electrode is formed to a predetermined depth in a state where it does not penetrate to the back surface of the semiconductor substrate.

  When two semiconductor substrates with such bumps are prepared, as shown in FIG. 4A, one semiconductor substrate (hereinafter referred to as “first semiconductor substrate”) 1A is the main bump forming surface. Adhere to the adhesive sheet 6A with the surface facing down. As a result, the first semiconductor substrate 1A is held by the frame 5A via the adhesive sheet 6A.

  Next, as shown in FIG. 4B, the thickness of the first semiconductor substrate 1A is reduced to, for example, about 100 to 300 μm by grinding the back surface of the first semiconductor substrate 1A with a grinder 7A. At this stage, as described above, the end portion of the through electrode formed in the first semiconductor substrate 1A in the wafer processing step in advance is not exposed.

  Next, as shown in FIG. 4C, the first semiconductor substrate 1A is reversed (inverted) and attached to the adhesive sheet 6A.

  Further, with respect to the other semiconductor substrate (hereinafter referred to as “second semiconductor substrate”) 1B, as shown in FIG. 5A, the main surface to be a bump forming surface faces downward and the second semiconductor substrate 1B. Is attached to the pressure-sensitive adhesive sheet 6B. As a result, the second semiconductor substrate 1B is held by the frame 5B via the adhesive sheet 6B.

  Next, as shown in FIG. 5B, the back surface of the second semiconductor substrate 1B is ground with a grinder 7B, thereby reducing the thickness of the second semiconductor substrate 1B to, for example, about 100 to 300 μm.

  Next, as shown in FIG. 5C, after the second semiconductor substrate 1B is turned upside down (inverted) and attached to the adhesive sheet 6B, the second semiconductor substrate 1B is not shown in the drawing blade. The second semiconductor substrate 1B is divided into a plurality of chips by cutting into chips.

  Next, as shown in FIG. 5D, each semiconductor chip 1 </ b> B ′ separated by dicing is transferred to the tray 13.

  After the two semiconductor substrates 1A and 1B are pre-processed in this way, as a COW (chip-on-wafer) bonding step, as shown in FIG. 6A, the first semiconductor substrate mounted on the adhesive sheet 6A On the main surface (bump formation surface) of 1A, the semiconductor chip 1B ′ cut into pieces from the second semiconductor substrate 1B is mounted by flip chip bonding.

  Next, as shown in FIG. 6B, a liquid underfill resin (for example, epoxy resin) 14 is injected (filled) between the first semiconductor substrate 1A and the semiconductor chip 1B ′ (gap portion). This is cured. In this case, since the bumps 4A and 4B are formed on both the first semiconductor substrate 1A and the semiconductor chip 1B ', the bumps are bonded to each other with the bumps 4A and 4B being in contact with each other. However, the bump for flip chip bonding may be formed on at least one of the first semiconductor substrate 1A and the semiconductor chip 1B 'mounted thereon. The underfill resin 14 may be cured by natural drying or heat treatment.

  Next, as shown in FIG. 6C, a heat sink 9 is attached to the back surface of each semiconductor chip 1B ′ by using a heat dissipating resin 8 to thereby form a semiconductor chip on the main surface of the first semiconductor substrate 1A. The heat radiating plate 9 is attached through 1B ′. Regarding the heat radiating resin 8 and the heat radiating plate 9, the same materials as those in the first embodiment may be used.

  Next, the back surface of the first semiconductor substrate 1A is ground with a grinder in a state where the heat sink 9 is attached, so that it is formed on the first semiconductor substrate 1A in advance as shown in FIG. 7A. The first semiconductor substrate 1 </ b> A is thinned to a thickness that does not expose the end of the through electrode 15 to the outside (in other words, just before the end of the through electrode 15 is exposed).

  Next, as shown in FIG. 7B, the back surface of the first semiconductor substrate 1A is polished by CPM (Chemical Mechanical Polishing) or the like, whereby the surface to be ground of the first semiconductor substrate 1A is obtained. (Unevenness) is flattened.

  Next, as shown in FIG. 7C, the end portion of the through electrode 15 is exposed to the outside by silicon etchback.

  Next, as shown in FIG. 7D, the oxide film 16 covering the end of the through electrode 15 is removed by etching (wet etching or dry etching).

  Next, as shown in FIG. 7E, an insulating film 17 is formed on the back surface of the first semiconductor substrate 1A so as to cover the end portion of the through electrode 15. The insulating film 17 can be formed using, for example, a plasma CVD method.

  Next, as shown in FIG. 7F, a wiring 18 is formed on the back surface (on the insulating film 17) of the first semiconductor substrate 1A. The wiring 18 can be formed using, for example, a CVD method using copper as a wiring material.

  Next, as shown in FIG. 8A, bumps (for example, solder bumps) 19 serving as connection terminals for external connection are formed on the back surface of the first semiconductor substrate 1A. The bump 19 can be formed on the electrode pad of the wiring 18 by using, for example, an electrolytic plating method or a printing method.

  Next, as shown in FIG. 8B, the first semiconductor substrate 1A is attached to the adhesive sheet 6A with the formation surface (back surface) of the bump 19 facing downward. As a result, the first semiconductor substrate 1A is held by the frame 5A via the adhesive sheet 6A.

  Next, as shown in FIGS. 9A and 9B, with the first semiconductor substrate 1A attached to the adhesive sheet 6, the heat radiating plate 9 is cut into chips with the blade 10 of the dicing apparatus ( After the dicing, the first semiconductor substrate 1 is cut into a chip size with a blade 11 thinner than the previous one, so that chips are cut out from the semiconductor substrate 1A together with the heat sink 9 into individual pieces.

  As a result, as shown in FIG. 9C, the semiconductor chip 1B ′ is mounted on the main surface of the semiconductor chip 1A ′ cut out from the first semiconductor substrate 1A, and the heat sink is formed on the back surface of the semiconductor chip 1B ′. A three-dimensional stacked semiconductor device 20 with 9 attached is obtained.

  The semiconductor device 20 obtained by such a manufacturing method is, for example, mounted on a mounting board (not shown) (a glass epoxy circuit board, a silicon interposer board, etc.) by flip chip bonding, and then injected and cured with an underfill resin. Is used in a state where the joint is sealed.

  In the semiconductor device manufacturing method described above, after the semiconductor chip 1B ′ is flip-chip mounted on the first semiconductor substrate 1A, the heat sink 9 is bonded to the first semiconductor substrate 1A via the semiconductor chip 1B ′. In this state, since the semiconductor chip 1A ′ is cut out together with the heat sink 9 from the first semiconductor substrate 1A, when the first semiconductor substrate 1A is separated into pieces by dicing, a three-dimensional stacked type with a heat sink is provided. The semiconductor device 20 is obtained. For this reason, when manufacturing a semiconductor device having a heat dissipation structure, it is not necessary to attach a heat dissipation member for each chip. Further, when manufacturing a three-dimensional stacked type semiconductor device, it is not necessary to peel the support material from the semiconductor substrate.

  Further, a predetermined process is performed on the back surface of the first semiconductor substrate 1A with the heat sink 9 attached, for example, back surface grinding and wiring formation shown in FIGS. 7A to 7F, and further to FIG. 8A. Since the back surface processing such as the formation of the connection terminals (bumps) shown is performed, the back surface processing process of the first semiconductor substrate 1A can be performed using the heat sink 9 as a support material.

  In the second embodiment, the through electrode is formed in the first semiconductor substrate 1A in the wafer processing step in advance. However, the present invention is not limited to this, and the first grinding is performed by the back surface grinding in the back surface processing process. After thinning the semiconductor substrate 1A, a through electrode may be formed on the first semiconductor substrate 1A by, for example, forming a through hole, forming an oxide film, or embedding a metal.

It is process drawing (the 1) which shows 1st Embodiment of the manufacturing method of the semiconductor device which concerns on this invention. It is process drawing (the 2) which shows 1st Embodiment of the manufacturing method of the semiconductor device which concerns on this invention. It is process drawing (the 3) which shows 1st Embodiment of the manufacturing method of the semiconductor device which concerns on this invention. It is process drawing (the 1) which shows 2nd Embodiment of the manufacturing method of the semiconductor device which concerns on this invention. It is process drawing (the 2) which shows 2nd Embodiment of the manufacturing method of the semiconductor device which concerns on this invention. It is process drawing (the 3) which shows 2nd Embodiment of the manufacturing method of the semiconductor device which concerns on this invention. It is process drawing (the 4) which shows 2nd Embodiment of the manufacturing method of the semiconductor device which concerns on this invention. It is process drawing (the 5) which shows 2nd Embodiment of the manufacturing method of the semiconductor device which concerns on this invention. It is process drawing (the 6) which shows 2nd Embodiment of the manufacturing method of the semiconductor device which concerns on this invention. It is process drawing (the 1) which shows an example of the manufacturing method of the conventional semiconductor device. It is process drawing (the 2) which shows an example of the manufacturing method of the conventional semiconductor device. It is process drawing (the 3) which shows an example of the manufacturing method of the conventional semiconductor device. It is a figure which shows the structural example of the semiconductor device which has the conventional heat dissipation structure.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1,1A, 1B ... Semiconductor substrate, 1 ', 1A', 1B '... Semiconductor chip, 4, 4A, 4B, 19 ... Bump, 8 ... Heat radiation resin, 9 ... Heat sink, 10, 11 ... Blade, 12, 20 ... Semiconductor devices

Claims (3)

Attaching a heat sink on the surface of the semiconductor substrate on which the element circuit is formed;
And a step of cutting the chip together with the heat radiating plate from the semiconductor substrate into individual pieces while the heat radiating plate is bonded to the semiconductor substrate. Flip chip mounting a semiconductor chip on a first surface of a semiconductor substrate on which an element circuit is formed;
Bonding a heat sink on the first surface of the semiconductor substrate via the semiconductor chip;
And a step of cutting a chip from the semiconductor substrate together with the heat dissipation plate into individual pieces while the heat dissipation plate is bonded to the semiconductor substrate. The method of manufacturing a semiconductor device according to claim 2, further comprising a step of performing a predetermined process on the second surface side of the semiconductor substrate in a state in which the heat sink is bonded.

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