JP2008127642A - Vapor deposition apparatus and method for recycling vapor deposition material - Google Patents

Abstract

A vapor deposition material deposited on a surface of a shutter plate on a vapor deposition source side can be removed by providing a self-cleaning function, and the vapor deposition material deposited on the vapor deposition source side of a shutter plate is reused. Then, it aims at providing the vapor deposition apparatus which can raise the use efficiency of vapor deposition material.
The deposition material adhering to the shutter plate is melted by heating using a vapor deposition apparatus having a shutter plate with a raised surface on the vapor deposition source side of the shutter plate and a heater installed on the deposition target side of the shutter plate. Then, by collecting on the raised convex part of the shutter plate, it is dropped into the vapor deposition source and collected.
[Selection] Figure 2

Description

  The present invention relates to a vapor deposition apparatus capable of regenerating a vapor deposition material and a method for regenerating the vapor deposition material in a vapor deposition apparatus that forms a film on a vapor deposition surface of a substrate by vaporizing the vapor deposition material with a vapor deposition source.

  Thin film technology is the most important technology that supports electronics in hardware. In recent years, the minimum dimensions of devices that make up electronics have shifted to the nanometer range. In order to realize such a device, the material inevitably becomes a thin film, and the fabrication of the material requires a controllability of nanometers to angstroms. On the other hand, industrially, materials and devices must be advanced without impairing productivity, and a technology having atomic level controllability and sufficient thin film formation speed is required. Furthermore, as the functions of devices are diversifying, the thin film forming materials to be controlled are becoming widespread such as semiconductors, magnetic materials, insulators, oxides, dielectrics, metals, and superdielectrics.

  Thin films laminated in this manner are, for example, electrodes for display devices such as liquid crystal display devices and electroluminescence display devices, functional thin films, wiring for printed wiring boards, and resistance films for passive elements formed by built-in printed wiring boards. And a film for controlling optical properties and molecular permeation.

  The thin film formation method used in this way is roughly divided into two methods, that is, a vacuum deposition method and a plasma deposition method. One of these methods, vacuum deposition, is a film deposition technology that was put into practical use prior to plasma deposition, with a simple device structure, easy film thickness control with shutters, etc., and high purity in high vacuum. It is widely used because it has the advantage that it can form a film and the sample is not damaged by plasma as in plasma deposition.

There are several processes for vacuum deposition. First, the entire chamber is evacuated and the vapor deposition material is heated and melted to form a molten metal that is vaporized. The molten metal refers to a vapor deposition material in a molten state in the vapor deposition source. Next, the vapor deposition material that has become gas molecules collides with and adheres to the deposition object, thereby forming a thin film. There are a resistance heating method, an electron beam method, a high frequency induction method, a laser method, and the like as a method for heating and melting the vapor deposition material. In order to prevent the vapor deposition material molecules from colliding with the remaining gas molecules in the chamber before reaching the deposition target, and so that the gas molecules themselves do not collide with the deposition target, the degree of vacuum (10 ^{− 2} to 10 ⁻⁴ Pa) is required.

  Among the heating / melting methods, the resistance heating type is generally widely used because the structure of the apparatus is simple. In the resistance heating type, resistance heat is generated by passing an electric current through a container (deposition source) in which the deposition material is accommodated, and the deposition material in the container is heated, melted and vaporized by the heat. If this container is shallow, so-called boat type, if a large amount of vapor deposition material is put in the container and heated, the molten metal will short-circuit between the electrodes, current does not flow to the boat but flows to the vapor deposition source, and the vapor deposition material There is a problem that it does not evaporate at all, or the current concentrates on the part where the boat is exposed and burns out there. Therefore, industrially, a method is used in which a crucible capable of charging a larger amount of vapor deposition material is used and the crucible is heated with a heater wire such as Ta provided on the outer wall of the crucible. Here, the crucible for vapor deposition refers to a cylindrical heat-resistant container having an accommodating portion for accommodating a vapor deposition material at the bottom, and having an opening above which the vaporized vapor deposition material is discharged to a deposition target.

  As a mechanism to control the rate of vapor deposition material vaporized from the vapor deposition source, a shutter is provided near the opening of the vapor deposition source, and the evaporation rate of the vapor deposition material vaporized from the evaporation source is monitored. Opening is performed to start deposition on the surface of the deposition object. The shutter also has an action of preventing the deposition material from adhering to the chamber and preventing different materials from entering the deposition source.

  In the vapor deposition apparatus, a large amount of vapor deposition material adheres to the vapor deposition source side of the shutter plate when used for a long time. For this reason, there is a possibility that the vapor deposition material peels off from the shutter and enters the vapor deposition source. In such a case, the state of the vapor deposition source becomes unstable due to the difference between the temperature of the vapor deposition source and the temperature of the peeled vapor deposition material. In order to adversely affect the deposition, frequent cleaning was required. Further, the vapor deposition material deposited on the surface of the shutter plate is wasted, and the use efficiency of the vapor deposition material is also problematic.

In order to solve this problem, a method of using a material that is inert with respect to the vapor deposition material for the shutter or the like to prevent entry of foreign matter, and removing the shutter from the vapor deposition apparatus to reuse the vapor deposition material (for example, Patent Document 1). Have been proposed). However, in the technique of the above-mentioned patent document 1, in order to reuse the vapor deposition material attached to the shutter, it is necessary to remove the shutter once from the vapor deposition apparatus. It is not possible to use it if you want to keep it, and the vapor deposition material peeled off from the shutter may also be damaged by contact with the heating wire or thermocouple provided in the container containing the vapor deposition source. . Also, when the vapor deposition material is reused, it is necessary to take out the shutter plate and collect the deposited vapor deposition material, which is inefficient in terms of productivity.
JP 2002-190389 A

  The present invention has been made in order to solve the above-described conventional problems, and enables vapor deposition material deposited on the surface of the shutter plate on the vapor deposition source side to be removed by providing a self-cleaning function. An object of the present invention is to provide a vapor deposition apparatus capable of increasing the use efficiency of the vapor deposition material by reusing the vapor deposition material deposited on the vapor deposition source side surface of the shutter plate.

  A first invention according to claim 1 made to solve the problems of the present invention is a vapor deposition apparatus for vaporizing a vapor deposition material of a vapor deposition source and forming a film on a vapor deposition surface of a vapor deposition target, wherein the vapor deposition source The vapor deposition apparatus is characterized in that a shutter is provided immediately above the opening, and the shutter plate of the shutter includes a raised portion on the vapor deposition source side. The shutter plate is a plate for shielding vapor deposition existing on the surface on the vapor deposition source side of the shutter.

  According to a second aspect of the present invention for solving the problems of the present invention, there is provided a vapor deposition apparatus for vaporizing a vapor deposition material of a vapor deposition source to form a film on a vapor deposition surface of a vapor deposition target, wherein the vapor deposition source A vapor deposition apparatus comprising: a shutter for adjusting a vapor deposition rate including a portion protruding to the vapor deposition source side immediately above the opening of the first electrode; and a heater connected to a shutter plate of the shutter.

  A third invention according to claim 3 made to solve the problem of the present invention is characterized in that the heater comprises a heating wire provided on the deposition object side of the shutter plate. It is a vapor deposition apparatus of description.

A fourth invention according to claim 4 made to solve the problem of the present invention is characterized in that the thickness of the shutter plate is 0.1 mm or more and 5 mm or less. It is a vapor deposition apparatus of description.

A fifth invention according to a fifth aspect of the present invention made to solve the problems of the present invention is the vapor deposition apparatus according to any one of the first to fourth aspects, wherein the shutter plate is made of ceramic.

6th invention based on Claim 6 made | formed in order to solve the subject of this invention is the vapor deposition apparatus in any one of the Claims 1 thru | or 4 with which the said shutter board consists of a refractory metal. is there.

The seventh invention according to claim 7 made to solve the problem of the present invention is to dissolve the vapor deposition material adhering to the shutter by heating the shutter, and move the vapor deposition material to the vapor deposition source. A method for reclaiming a vapor deposition material.

An eighth invention according to claim 8 made to solve the problems of the present invention is the method for regenerating a vapor deposition material according to claim 6, wherein the vapor deposition material is melted by the temperature of the vapor deposition material of the vapor deposition source and the heating of the shutter. A method for regenerating a vapor deposition material, wherein the vapor deposition source is heated so that the temperature of the vapor deposition material is equal.

  The vapor deposition apparatus of the present invention is dissolved by applying heat to the vapor deposition material deposited on the surface of the shutter plate on the vapor deposition source side by using the vapor deposition apparatus for a long time by providing a heating mechanism that can control the temperature of the shutter plate. By dropping the molten metal (vapor deposition material) into the vapor deposition source, it becomes possible to reuse the vapor deposition material and to self-clean the vapor deposition material deposited on the shutter plate.

  With the first invention, the shape of the shutter plate is raised to the vapor deposition source side, so that the vapor deposition material that has become the molten metal from the tip of the convex portion becomes droplets efficiently near the center of the opening of the vapor deposition source. By being dropped, heating wires and thermocouples formed on the outer ring of the opening of the vapor deposition source are no longer damaged.

  According to the second invention, by providing a heating mechanism capable of controlling the temperature on the shutter plate, the vapor deposition material adhering to the shutter can be dissolved and the vapor deposition material can be regenerated, and the heating temperature matches the temperature of the vapor deposition source. By adjusting in such a manner, it was possible to clean the shutter and reuse the deposition material without damaging the deposition source container.

  According to the third invention, by providing a heating wire on the deposition object side of the shutter plate and heating, the vapor deposition material attached to the shutter can be dissolved efficiently and stably.

  According to the fourth invention, since the thickness of the shutter plate is not less than 0.1 mm and not more than 5 mm, it becomes possible to maintain high heat conduction, and the heat from the heater is efficiently conducted to the vapor deposition material attached to the shutter plate and dissolved. It became possible to make it.

  According to the fifth and sixth inventions, since the material of the shutter plate is inactive to the vapor deposition material, the vapor deposition material and the shutter material are not chemically reacted, and the vapor deposition material deposited on the shutter plate is reused. Even in this case, the deposition can be performed without affecting the physical properties of the film deposited on the surface of the deposition target.

  According to the seventh invention, it becomes possible to facilitate the cleaning of the shutter or the reuse of the vapor deposition material adhering to the shutter without taking out the shutter from the vapor deposition apparatus, so that the vapor deposition material can be used efficiently. became.

  According to the eighth invention, the shutter can be cleaned and the vapor deposition material can be reused without damaging the vapor deposition source container due to the temperature difference from the temperature of the vapor deposition material dissolved by heating the shutter plate.

  Below, the vapor deposition apparatus of this invention and the reproduction | regenerating method of vapor deposition material are demonstrated.

First, the vapor deposition apparatus will be described. FIG. 1 shows an example of a general vapor deposition apparatus. In the figure, 1 is a vacuum chamber, 2 is a shutter, 3 is a mask, 4 is a substrate, 5 is a backing plate, 6 is an evaporation material, 7 is an evaporation source, and 8 is an exhaust pump.

  In the lower part of the vacuum chamber 1, a bowl-shaped deposition source 7 is provided, in which the deposition material 6 is charged and evaporated by heating. The vapor deposition source 7 is provided with a power supply for supplying power through a power supply line outside the vacuum chamber 1. Here, as the vapor deposition material 6, for example, an organic material, a metal material, or the like can be used. A shutter 2 for substantially controlling ON / OFF of the vapor deposition rate of the vapor deposition material 6 is disposed immediately above the opening of the vapor deposition source 7. In addition, a backing plate 5 for fixing the substrate 4 downward is disposed above the vacuum chamber 1. Cooling water for cooling the substrate 4 flows inside the backing plate 5. The substrate 4 is made of, for example, a glass material or a metal material. A mask 3 having a desired opening pattern is installed between the shutter 2 and the substrate 4.

  Here, the shutter 2 is often made of an austenitic stainless steel flat plate that is inexpensive, has good workability, and is excellent in rust prevention. However, when such a shutter 2 is used for a long time, a large amount of vapor deposition material 6 vaporized by heating of the vapor deposition source adheres to the vapor deposition source 7 side of the shutter 2. Therefore, there is a possibility that a compound generated by a chemical reaction between the vapor deposition material 6 and the material of the shutter 2 may be separated from the shutter 2 and mixed into the vapor deposition source 7 as a foreign substance, which requires frequent cleaning. Further, the vapor deposition material 6 deposited on the surface of the shutter 2 is wasted, and the use efficiency of the vapor deposition material 6 is also a problem.

  On the other hand, the vapor deposition apparatus of the present invention is a vapor deposition apparatus that can remove and reuse the vapor deposition material deposited on the surface of the shutter 2 on the vapor deposition source 7 side by providing a self-cleaning function. FIG. 2 is an explanatory diagram of the shutter according to the present invention. FIG. 3 shows a diagram for explaining how the vapor deposition material is recycled when the shutter of the present invention is used.

First, the vapor deposition apparatus of the present invention will be described with reference to FIG. In FIG. 2, only the shutter portion is taken out from the vapor deposition apparatus and shown.

  The shutter of the present invention is characterized by a shutter plate 9 having a convex portion 10 having a shape raised on the vapor deposition source side. By making the shape raised on the vapor deposition side, the liquefied vapor deposition material can be collected in one place from the vapor deposition source surface of the shutter plate. Therefore, the vapor deposition material adhering to the shutter plate can be accurately collected in the vapor deposition source container.

  The shutter plate 9 of the present invention can be manufactured by a known forming method such as a mold taking method or a cutting method.

  The shape of the tip of the raised convex portion 10 of the shutter plate is preferably a curved shape without forming a corner. This is because, when the corner is formed, the residual stress due to the vapor deposition material 15 attached to the shutter plate 9 is concentrated on the corner, which may become a starting point of crack breakage. However, it is more effective when the viscosity of the melted vapor deposition material is high because the tip of the convex portion is more sharp because the vapor deposition material is more easily dropped. Therefore, the design may be made in consideration of the durability of the shutter material and the property of the vapor deposition material.

  As the place where the shutter is installed, if it is directly above the vapor deposition source opening, the position of the convex portion 10 formed on the shutter plate 9 is matched with the position of the vapor deposition source opening, so that the molten metal attached to the shutter is formed. Although the droplet 16 of the material 15 is not dropped and damaged by the heating wire 14 formed on the outer ring of the opening of the vapor deposition source, the closer to the vapor deposition source side, the more vapor deposition material is stored. According to the invention, it can be recovered and recovered, which is preferable. This is because if the distance between the vapor deposition source and the shutter is increased, the vapor deposition material adhering to portions other than the shutter increases even when the shutter is closed, and the recovery rate of the vapor deposition material is reduced.

  As a material constituting the shutter plate 9, any material that has excellent heat resistance and is inactive with respect to the vapor deposition material 15 can be used. For example, it is selected from the group consisting of ceramics selected from the group consisting of oxides, nitrides, carbides, carbon, or refractory metal materials such as molybdenum, tantalum, and tungsten. Examples of the ceramic include C (carbon) and BN (boron nitride). Examples of the refractory metal include molybdenum (melting point: 2620 ° C.), tantalum (melting point: 2990 ° C.), tungsten (melting point: 3400 ° C.), and the like.

  Next, it is desirable to provide the shutter with a heater 11 for dissolving and liquefying the vapor deposition material adhering to the shutter plate. As this heater, a heater 11 composed of a heating wire can be connected to the opposite side across the vapor deposition source and the shutter plate 9, that is, the vapor deposition object side.

  In the shutter of the present invention, the thickness of the shutter plate 9 is preferably 0.1 mm or more and 5 mm or less. When the thickness of the shutter plate 9 is less than 0.1 mm, the impact resistance is not sufficient, and it may be destroyed by an external impact. When the thickness exceeds 5 mm, the heat conduction becomes too low. This is because the heat from the heater 11 may not be sufficiently transferred to the vapor deposition material 15 attached to the shutter plate 9, and it may not be possible to efficiently dissolve and drop into the crucible 13. Also, as will be described later, when it is desired to reduce the temperature difference between the vapor deposition material adhering to the shutter plate and the vapor deposition source, the higher the heat conduction, the easier the adjustment.

  A vapor deposition source (not shown) used in the present invention is preferably a vertical vapor deposition source such as a boat or a crucible. For example, when a vapor deposition material is wound around a heating wire, when the vapor deposition material 15 that has been heated to become molten metal is dropped into the vapor deposition source, it spills from the vapor deposition source and contaminates the vacuum chamber. It is because it may become a cause.

  As a heating method for vaporizing the evaporation material of the evaporation source, a known evaporation source heating method such as direct heating with a heating wire such as tungsten or indirect heating with an electron beam can be used.

Next, a method for regenerating the vapor deposition material attached to the shutter according to the present invention will be described with reference to FIG. In FIG. 3, parts other than the shutter and the evaporation source are omitted.

  When a method of heating the crucible 13 with the heater 14 to melt and vaporize the vapor deposition material 6 in the crucible 13 as a vapor deposition source is used, the shutter plate is vapor deposited when the vapor deposition rate on the deposition target is turned off by the shutter. The evaporated vapor deposition material 12 is positioned directly above the source, and deposits thickly on the surface of the shutter plate 9 centering on the center normal of the opening surface of the crucible 13 according to the law of the thin film deposition rate (FIG. 3A )). For this reason, as described above, the closer the position of the shutter of the present invention is to the evaporation source, the more vaporized vapor deposition material is deposited on the shutter.

  Before the vapor deposition material 15 attached to the surface of the shutter plate 9 is laminated to such a thickness that the vapor deposition material 15 peels from the surface of the shutter plate 9, the shutter adhesion vapor deposition material 15 can be dissolved by heating the shutter plate 9 with the heater 11. it can.

The melted shutter adhering vapor deposition material 15 gathers on the convex portion 10 along the surface of the shutter plate 9 raised to the vapor deposition source side, and is dropped into the crucible 13 which becomes the droplet 16 by its own weight (FIG. 3B). As described above, since the positions of the convex portion 10 and the vapor deposition source coincide with each other, the dropped vapor deposition material does not fall to a location outside the vapor deposition source and damage the vapor deposition apparatus.

  Thus, by returning the vapor deposition material 15 adhering to the surface of the shutter plate 9 to the crucible 13 as the vapor deposition source, the vapor deposition material can be reused and self-cleaned. Further, since the material of the shutter plate 9 is inactive with respect to the vapor deposition material 15 adhering to the shutter surface, both do not chemically react to form foreign matter, and the vapor deposition material 15 deposited on the shutter plate 9 is regenerated. Even when used, the physical properties of the film deposited on the surface of the substrate 4 are not affected. Further, since the shutter plate can be cleaned without removing the shutter 9 from the vapor deposition apparatus, the shutter plate can be cleaned while the vapor deposition apparatus is kept in a vacuum state, and vapor deposition is continuously performed on the substrate. In this case, the atmospheric pressure is not adversely affected by returning to atmospheric pressure in order to remove the deposits adhered to the shutter plate.

  In the shutter of the present invention, the temperature of the shutter plate 9 is preferably controlled between room temperature and 2000 ° C. When performing the vapor deposition operation, the temperature of the shutter plate 9 is maintained at room temperature. Further, when the vapor deposition material 15 adhering to the shutter plate 9 is removed and reused, it is heated to a temperature at which the vapor deposition material 15 is dissolved. At this time, it is preferable that the temperature applied to the shutter plate 9 is higher because the viscosity of the dissolved vapor deposition material 15 becomes lower and is efficiently dropped into the vapor deposition source. However, when the vapor deposition material 15 has a temperature high enough to exceed the pressure in the vacuum chamber, the shutter deposited vapor deposition material 15 is vaporized and scattered, so that the shutter is cleaned. However, the deposited material cannot be recovered and recovered by the mechanism of the present invention. Therefore, it is preferable that the vapor pressure of the vapor deposition material 15 is heated to a temperature that does not exceed the pressure in the vacuum chamber.

  For the same reason, the vapor deposition material 6 is not a sublimable material, but a vapor deposition material that vaporizes from a solid through a molten metal by applying heat is suitable for the present invention. This is because, in the shutter of the present invention, the vapor deposition material 15 is reused by dropping the vapor deposition material 15 that has been heated into a molten metal into the vapor deposition source. However, even with a sublimable vapor deposition material, the shutter adhering vapor deposition material 15 can be vaporized and removed by applying a high temperature to the shutter plate 9 so that the vapor pressure exceeds the pressure in the vacuum chamber.

In various vapor deposition materials given as examples in Table 1 below, a temperature at which a vapor pressure equivalent to a pressure in a general vacuum chamber (1.3 × 10 ⁻² Pa) is obtained, and a material for the shutter plate 9 are preferable. Indicates the material.

  Moreover, when performing the operation | work which drops the vapor deposition material 15 which became the molten metal by heating the shutter plate 9 to a vapor deposition source, it is preferable that the temperature of a vapor deposition source is maintained at the temperature substantially equivalent to the temperature of the shutter plate 9. FIG. This is because if the vapor deposition source remains at room temperature, the vapor deposition source may be damaged due to a rapid temperature change when the high-temperature molten metal 16 is dropped. In order to prevent this, it is preferable to provide a mechanism capable of measuring the temperature of the shutter plate 9 and the vapor deposition source by a thermocouple or the like and controlling the temperature so that both are equal.

  Specific examples of the present invention are shown below.

  In the shutter of the present invention shown in FIG. 2, a shutter having a shutter outer diameter X1 = 100 mm, a shutter plate thickness X2 = 1.5 mm, and a projection height X3 = 15 mm was prepared. The shutter plate was made of BN (boron nitride), and was produced by a mold taking method.

Using Al as a deposition material, 30 g is put in a deposition crucible formed of PBN (pyrolytic boron nitride), and a thin film made of Al is formed on a glass substrate at a vacuum degree of 3 × 10 ⁻⁴ Pa and a heating temperature of 1500 ° C. to 150 nm. The thickness was formed. ON / OFF of the deposition rate of the deposition material is adjusted by opening and closing the shutter. After repeating these operations 20 times, the vapor deposition material deposited on the surface of the shutter plate was melted by applying heat at 1100 ° C. to the shutter plate and dropped into a crucible. At this time, the temperature of the vapor deposition crucible was also maintained at 1100 ° C. When this operation was performed, a thin film made of Al could be formed on the glass substrate repeatedly up to 80 times until the vapor deposition material dies. Further, when the surface of the shutter plate was confirmed, Al was laminated only to a thickness of about a thin film.

(Comparative Example 1)
A shutter having the same outer diameter and thickness as the shutter of the present invention was prepared. The shutter plate is made of stainless steel, the shape is flat, and no heating mechanism is provided. Using Al as a deposition material, 30 g is put in a deposition crucible formed of PBN (pyrolytic boron nitride), and a thin film made of Al is formed on a glass substrate at a vacuum degree of 3 × 10 ⁻⁴ Pa and a heating temperature of 1500 ° C. to 150 nm. The thickness was formed. When this operation was performed, a thin film made of Al could be formed on the glass substrate repeatedly up to 50 times until the vapor deposition material dies. Further, when the surface of the shutter plate was confirmed, Al was laminated to a thickness of about 2 to 3 mm.

It is explanatory drawing of a common vapor deposition apparatus. It is explanatory drawing of the vapor deposition apparatus of this invention. It is explanatory drawing of the vapor deposition material reproduction | regeneration method of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Vacuum chamber 2 ... Shutter 3 ... Mask 4 ... Substrate 5 ... Backing plate 6 ... Deposition material 7 ... Deposition source 8 ... Exhaust pump 9 ... Shutter Plate 10 ・ ・ Convex 11 ・ ・ Heater (electric heating wire)
X1 ·· Outer diameter X2 of the shutter ·· Thickness of the shutter plate X3 ·· Height of the convex 12 ·· Evaporation material 13 · · Crucible 14 · · Crucible heater (heating wire)
15 .... Shutter-deposited deposition material 16 .... Drop of molten metal (deposition material)

Claims (8)

In the vapor deposition apparatus that vaporizes the vapor deposition material of the vapor deposition source and forms a film on the vapor deposition surface of the deposition target,
A vapor deposition apparatus comprising a shutter immediately above the opening of the vapor deposition source, wherein the shutter plate of the shutter includes a raised portion on the vapor deposition source side. In the vapor deposition apparatus that vaporizes the vapor deposition material of the vapor deposition source and forms a film on the vapor deposition surface of the deposition target,
A shutter for adjusting a deposition rate including a portion raised to the deposition source side immediately above the opening of the deposition source;
A heater connected to the shutter plate of the shutter;
The vapor deposition apparatus characterized by comprising.   The vapor deposition apparatus according to claim 2, wherein the heater is a heating wire provided on the deposition object side of the shutter plate.   The vapor deposition apparatus according to any one of claims 1 to 3, wherein the shutter plate has a thickness of 0.1 mm to 5 mm.   The vapor deposition apparatus according to claim 1, wherein the shutter plate is made of ceramic.   The vapor deposition apparatus according to any one of claims 1 to 4, wherein the shutter plate is made of a refractory metal. A method for regenerating a vapor deposition material, wherein the vapor deposition material adhering to the shutter is dissolved by heating the shutter plate, and the vapor deposition material is moved to the vapor deposition source. 8. The vapor deposition material regeneration method according to claim 7, wherein the vapor deposition source is heated so that the temperature of the vapor deposition material of the vapor deposition source is equal to the temperature of the vapor deposition material dissolved by heating the shutter. Material recycling method.