JP2008122660A - Alignment film forming method, liquid crystal device and electronic apparatus - Google Patents

Abstract

The moisture resistance of an alignment film is improved.
Inorganic alignment films 16 and 22 made of an inorganic material and having polarized hydroxyl groups on the surface thereof are formed on the substrates 10 and 20, respectively, and contain secondary saturated hydrocarbon compounds, nitrogen atoms and carbon atoms. The carbon atom at the 2-position of the secondary saturated hydrocarbon compound is carbocationized by vapor phase chemical growth method with a heterocyclic compound, and the protons desorbed by carbocationization are present on the surfaces of the inorganic alignment films 16 and 22. A surface treatment is performed to bond the secondary carbocationized secondary saturated hydrocarbon compound and the inorganic alignment films 16 and 22 with the hydroxyl group to be bonded.
[Selection] Figure 2

Description

  The present invention relates to an alignment film forming method, a liquid crystal device, and an electronic apparatus.

Conventionally, for example, as an alignment film for controlling the alignment of liquid crystal molecules in a liquid crystal device, an alignment film made of an inorganic material that improves light resistance and heat resistance and suppresses the occurrence of alignment defects is known compared to an alignment film made of an organic substance. (See, for example, Patent Document 1).
JP 2004-170744 A

By the way, in the inorganic alignment film according to an example of the above-described prior art, in the state in which a polarized hydroxyl group exists on the film surface, for example, when the inorganic alignment film is made of silicon oxide, For example, a compound having a polar group such as water is easily adsorbed, which may make it difficult to improve the moisture resistance of the alignment film.
For such a problem, the activity of the hydroxyl group on the surface of the alignment film can be eliminated by surface treatment with a silane coupling agent or the like, for example. However, when a siloxane bond (Si-O-Si) is present on the surface of the inorganic alignment film that has been surface-treated with a silane coupling agent, the inorganic alignment is caused by the hydrogen bonding property resulting from the oxygen atom of the siloxane bond. There is a possibility that the water repellency of the film surface is lowered, and it is desired to further improve the moisture resistance of the inorganic alignment film.

  The present invention has been made in view of the above circumstances, and an object thereof is to provide an alignment film forming method, a liquid crystal device, and an electronic apparatus that can improve the moisture resistance of the alignment film.

  In order to solve the above-described problems and achieve the object, the alignment film forming method of the present invention is made of an inorganic material, and has a base film (for example, the inorganic alignment film 16 in the embodiment, 22) is formed on a substrate (for example, the TFT array substrate 10 and the counter substrate 20 in the embodiment), and a secondary saturated hydrocarbon compound (for example, 2-methylpentane, 2-methyl in the embodiment) is formed. Heptane, 2-methyloctane, 2-methylnonane) and a gas phase chemical growth method using a heterocyclic compound containing a nitrogen atom and a carbon atom (for example, imidazole in the embodiment), to form the secondary saturated hydrocarbon Carbocationization of the carbon atom at the 2-position of the compound, and bonding of the proton desorbed by the carbocationization and the hydroxyl group present on the surface of the base film, results in the carbocationization. The base film is subjected to a surface treatment that combines the secondary saturated hydrocarbon compound and the base film to form an alignment film (for example, the inorganic alignment films 16 and 22 in the embodiment). It is said.

According to the above alignment film forming method, a secondary saturated hydrocarbon compound which is formed on a substrate, is made of an inorganic material, and has a polarized hydroxyl group on the surface thereof, can easily desorb β-position hydrogen. Since the surface treatment is performed, oxygen atoms are prevented from being included in the surface film after the surface treatment, and the water repellency due to the oxygen atoms is prevented from lowering the water repellency of the surface of the surface film after the surface treatment. can do.
In addition, in the surface treatment with the secondary saturated hydrocarbon compound, a proton obtained by carbocationization of the carbon atom at the 2-position of the secondary saturated hydrocarbon compound is obtained by using a heterocyclic compound containing a nitrogen atom and a carbon atom. Can be stably maintained, the secondary saturated hydrocarbon compound can be easily adsorbed to the surface of the base film by hydrogen bonding, and the surface treatment of the base film can be performed efficiently. it can.

  Furthermore, the alignment film forming method of the present invention is characterized in that the base film is formed by oblique deposition or sputtering.

  According to the above alignment film forming method, by forming the base film by the oblique deposition method, the film forming molecules can be aligned obliquely without the necessity of applying excessive energy to the film forming molecules. In addition, by forming a base film by a sputtering method, the adhesion of film-forming molecules to the substrate can be improved.

  The liquid crystal device of the present invention is a liquid crystal device in which liquid crystal is sandwiched between a pair of substrates facing each other, and the pair of substrates (for example, the TFT array substrate 10 and the counter substrate 20 in the embodiment). Each of the inner surfaces of the substrate includes an inorganic alignment film (for example, the inorganic alignment films 16 and 22 in the embodiment), and the inorganic alignment film is a secondary saturated hydrocarbon compound (for example, 2-methyl in the embodiment). The surface is treated by a chemical vapor deposition method using pentane, 2-methylheptane, 2-methyloctane, 2-methylnonane) and a heterocyclic compound containing a nitrogen atom and a carbon atom (for example, imidazole in the embodiment). It is characterized by having.

According to the above liquid crystal device, the base film formed on the substrate, made of an inorganic material, and having a polarized hydroxyl group on the surface is a secondary saturated hydrocarbon compound, and a heterocyclic compound containing a nitrogen atom and a carbon atom Since the surface is treated by vapor phase chemical growth method using, for example, when the surface is treated with a silane coupling agent, oxygen atoms present on the surface of the base film on which the surface treatment has been performed It is possible to prevent the water repellency of the base film from being lowered due to hydrogen bonding caused by the above, and to improve the moisture resistance of the liquid crystal device.
In addition, the orientation regulating force can be improved by performing a surface treatment with a secondary saturated hydrocarbon compound and a heterocyclic compound on the base film having a relatively weak orientation regulating force.

In addition, an electronic apparatus according to the present invention includes the above-described liquid crystal device (for example, the liquid crystal device 100 in the embodiment).
According to said electronic device, the lifetime of an electronic device can be improved.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of a liquid crystal device, an alignment film forming method, and an electronic apparatus according to the invention will be described with reference to the accompanying drawings.

(Liquid crystal device)
The liquid crystal device 100 according to the present embodiment is configured, for example, as shown in FIGS. 1 and 2, in which a liquid crystal 50 is sandwiched between a pair of opposed TFT array substrates 10 and a counter substrate 20.
2 is a cross-sectional view taken along line AA ′ in FIG. 4 to be described later.
In the center of the TFT array substrate 10, for example, as shown in FIG.
A sealing material 19 is disposed at the peripheral edge of the image production region 101, and thereby, the liquid crystal 50 is sealed in the image production region 101, for example, as shown in FIG. The liquid crystal 50 is formed by directly applying a liquid crystal material on the surface of the TFT substrate 10, and has a so-called sealing-less structure in which the liquid crystal material inlet is not provided in the sealing material 19.
On the outside of the sealing material 19, for example, as shown in FIG. 1, a scanning line driving element 110 that supplies a scanning signal to a scanning line 3a described later, and a data line driving element that supplies an image signal to a data line 6a described later. 120 is implemented.
A wiring 76 is routed from each driving element 110, 120 to the connection terminal 79 at the end of the TFT substrate 10.

Further, for example, as shown in FIG. 2, a common electrode 21 is formed on the counter substrate 20 bonded to the TFT substrate 10. For example, as shown in FIG. 1, the common electrode 21 is formed over substantially the entire area of the image production region 101, and inter-substrate conducting portions 70 are provided at four corners of the common electrode 21. A wiring 78 is routed from the inter-substrate conduction portion 70 to the connection terminal 79.
The liquid crystal device 100 is driven by supplying various signals input from the outside to the image forming region 101 via the connection terminals 79.

  In the image production area 101 of the liquid crystal device 100, for example, as shown in FIG. 3, a plurality of dots are arranged in a matrix, and a pixel electrode 9 is formed on each of these dots. Further, a TFT element 30 which is a switching element for performing energization control to the pixel electrode 9 is formed on the side of the pixel electrode 9. A data line 6 a is connected to the source of the TFT element 30. Each data line 6a is supplied with image signals S1, S2,..., Sn (n is an arbitrary natural number) from the data line driving element 120.

  A scanning line 3 a is connected to the gate of the TFT element 30. Scanning signals G1, G2,..., Gm (m is an arbitrary natural number) are supplied to the scanning line 3a in a pulsed manner from the scanning line driving element 110 at a predetermined timing. A pixel electrode 9 is connected to the drain of the TFT element 30. When the TFT elements 30 serving as switching elements are turned on for a certain period by the scanning signals G1, G2,..., Gm supplied from the scanning line 3a, the image signals S1, S2,. Sn is written to the liquid crystal 50 of each dot through the pixel electrode 9 at a predetermined timing.

  Image signals S1, S2,..., Sn written in the liquid crystal 50 are held for a certain period by a liquid crystal capacitor formed between the pixel electrode 9 and a common electrode 21 described later. In order to prevent leakage of the held image signals S1, S2,..., Sn, a storage capacitor 17 is formed between the pixel electrode 9 and the capacitor line 3b, and is arranged in parallel with the liquid crystal capacitor. . Thus, when a voltage signal is applied to the liquid crystal 50, the alignment state of the liquid crystal molecules changes depending on the applied voltage level. Thereby, the light source light incident on the liquid crystal 50 is modulated to produce image light.

Further, in the liquid crystal device 100 of the present embodiment, as shown in FIG. 4, for example, a rectangular shape made of a transparent conductive material such as indium tin oxide (hereinafter referred to as ITO) on the TFT array substrate 10. The pixel electrodes 9 having the contour portion 9a are arranged in a matrix. Further, data lines 6a, scanning lines 3a, and capacitor lines 3b are provided along the vertical and horizontal boundaries of the pixel electrodes 9.
The liquid crystal device 100 has a structure in which a rectangular area in which each pixel electrode 9 is formed is a dot, and display can be performed for each dot arranged in a matrix.

  The TFT element 30 is formed around a semiconductor layer 1a made of a polysilicon film or the like. A data line 6 a is connected to a source region, which will be described later, of the semiconductor layer 1 a through a contact hole 5. A pixel electrode 9 is connected to a drain region of the semiconductor layer 1a, which will be described later, through a contact hole 8. On the other hand, a channel region 1a 'is formed in a portion of the semiconductor layer 1a facing the scanning line 3a.

For example, as shown in FIG. 2, the TFT substrate 10 includes a substrate body 10A made of a light-transmitting material such as glass or quartz, a TFT element 30 formed inside the substrate body 10A, a pixel electrode 9, and an inorganic orientation. The film 16 or the like is mainly used.
The counter substrate 20 is mainly composed of a substrate body 20A made of a translucent material such as glass or quartz, a common electrode 21 formed inside the substrate body 20A, an inorganic alignment film 22 and the like.

  A first light shielding film 11 a and a first interlayer insulating film 12 are formed on the surface of the TFT substrate 10. A semiconductor layer 1a is formed on the surface of the first interlayer insulating film 12, and a TFT element 30 is formed around the semiconductor layer 1a. A channel region 1a 'is formed in a portion of the semiconductor layer 1a facing the scanning line 3a, and a source region and a drain region are formed on both sides thereof. Since this TFT element 30 adopts an LDD (Lightly Doped Drain) structure, a high concentration region having a relatively high impurity concentration and a relatively low concentration region (LDD region) are respectively provided in the source region and the drain region. And are formed. That is, a low concentration source region 1b and a high concentration source region 1d are formed in the source region, and a low concentration drain region 1c and a high concentration drain region 1e are formed in the drain region.

  A gate insulating film 2 is formed on the surface of the semiconductor layer 1a. A scanning line 3a is formed on the surface of the gate insulating film 2, and a portion facing the channel region 1a 'constitutes a gate electrode. A second interlayer insulating film 4 is formed on the surfaces of the gate insulating film 2 and the scanning line 3a. A data line 6a is formed on the surface of the second interlayer insulating film 4, and the data line 6a is connected to the high-concentration source region 1d through a contact hole 5 formed in the second interlayer insulating film 4. . Further, a third interlayer insulating film 7 is formed on the surfaces of the second interlayer insulating film 4 and the data line 6a. Then, a pixel electrode 9 is formed on the surface of the third interlayer insulating film 7, and this pixel electrode 9 has a high concentration via a contact hole 8 formed in the second interlayer insulating film 4 and the third interlayer insulating film 7. It is connected to the drain region 1e. Further, an inorganic alignment film 16 is formed so as to cover the pixel electrode 9, and the alignment of liquid crystal molecules when a non-selection voltage is applied is regulated.

In the present embodiment, the first storage capacitor electrode 1f is formed by extending the semiconductor layer 1a. Further, a dielectric film is formed by extending the gate insulating film 2, and a capacitor line 3b is arranged on the surface of the dielectric film to form a second storage capacitor electrode. As a result, the storage capacitor 17 is configured.
A first light shielding film 11 a is formed on the surface of the substrate body 10 </ b> A corresponding to the formation region of the TFT element 30. The first light shielding film 11a prevents light incident on the liquid crystal device from entering the channel region 1a ′, the low concentration source region 1b, and the low concentration drain region 1c of the semiconductor layer 1a.

  In addition, a second light shielding film 23 is formed on the surface of the substrate body 20 </ b> A in the counter substrate 20. The second light shielding film 23 prevents light incident on the liquid crystal device from entering the channel region 1a ′, the low concentration source region 1b, the low concentration drain region 1c, and the like of the semiconductor layer 1a. It is provided in a region overlapping with the layer 1a. A common electrode 21 made of a conductor such as ITO is formed on the entire surface of the counter substrate 20 over substantially the entire surface. Furthermore, an inorganic alignment film 22 is formed on the surface of the common electrode 21 so that the alignment of liquid crystal molecules when a non-selection voltage is applied is regulated.

  Here, as described later, the inorganic alignment film 16 on the TFT substrate 10 side and the inorganic alignment film 22 on the counter substrate 20 side include a secondary saturated hydrocarbon compound, and a heterocyclic compound containing nitrogen atoms and carbon atoms. The surface treatment is performed by the vapor phase chemical growth method, and the alignment of the liquid crystal 50 disposed on the surface of each inorganic alignment film 16 and 22 is regulated in a predetermined direction.

  Then, a liquid crystal 50 made of nematic liquid crystal having a positive dielectric anisotropy is sandwiched between the TFT array substrate 10 having the inorganic alignment films 16 and 22 subjected to the surface treatment and the counter substrate 20, and sealed. It is sealed with a material 19.

  In addition, polarizing plates 18 and 28 made of a material obtained by doping polyvinyl alcohol (PVA) with iodine or the like are disposed outside the substrates 10 and 20. Each polarizing plate 18, 28 is preferably mounted on a support substrate made of a high thermal conductivity material such as sapphire glass or quartz, and is separated from the liquid crystal device 100. Each of the polarizing plates 18 and 28 has a function of absorbing linearly polarized light in the absorption axis direction and transmitting linearly polarized light in the transmission axis direction. The polarizing plate 18 on the TFT array substrate 10 side is arranged so that the transmission axis of the polarizing plate 18 substantially coincides with the alignment regulating direction of the inorganic alignment film 16, and the polarizing plate 28 on the counter substrate 20 side is the polarizing plate 28. Are arranged so that their transmission axes substantially coincide with the alignment regulating direction of the inorganic alignment film 22.

(Alignment film forming method)
The liquid crystal device 100 according to the present embodiment has the above-described configuration. Next, a method for forming the inorganic alignment films 16 and 22 of the liquid crystal device 100 will be described with reference to the accompanying drawings.

First, the inorganic alignment films 16 and 22 made of silicon oxide such as SiO ₂ or SiO are formed on the substrates 10 and 20 by oblique vapor deposition.
In this embodiment, the inorganic alignment films 16 and 22 are formed by the oblique vapor deposition method. However, the present invention is not limited to this, and other methods include, for example, a sputtering method such as an ion beam sputtering method or a magnetron sputtering method. Alternatively, a method such as a sol-gel method or a self-assembly method can be employed.

Here, the vapor deposition apparatus 40 for forming the inorganic alignment films 16 and 22 includes, for example, a vapor deposition source 512 that generates a vapor flow of the inorganic alignment film material and the substrates 10 and 20 as shown in FIG. And a holding mechanism 514 for holding. Each substrate 10, 20 has an angle θ 0 formed by a reference line X 1 connecting the vapor deposition source 512 and the position of the center of gravity of the substrate surface of each substrate 10, 20 and a straight line X 2 perpendicular to the film formation surface of each substrate 10, 20. Is held by the holding mechanism 514 so as to be a predetermined value.
Accordingly, for example, as indicated by an arrow Y1 in FIGS. 5A and 5B, the traveling direction of the inorganic material generated from the vapor deposition source 512, that is, the discharging direction of the inorganic material, and the alignment film on each of the substrates 10 and 20. The angle θ1 formed with the substrate surface on which is formed can be adjusted by changing the angle θ0.
The angle θ1 is set to a predetermined value for arranging columnar structures to be described later on the substrate surface so as to obtain a surface shape effect for performing alignment control in the inorganic alignment films 16 and 22. . However, in this embodiment, since oblique vapor deposition is performed, the angle θ1 is set to be less than 90 °.

When oblique deposition is performed on each of the substrates 10 and 20 using this deposition apparatus 40, for example, as indicated by an arrow Y1 in FIG. 20 is continuously incident at a constant incident angle (tilt angle).
Thereby, as shown in FIG. 5A, the alignment film material is deposited in an oblique column shape on each of the substrates 10 and 20, and a columnar structure of an inorganic material is formed. That is, in the present embodiment, the inorganic alignment films 16 and 22 are constituted by a columnar structure formed innumerably on the surfaces of the substrates 10 and 20.

Next, the surfaces of the inorganic alignment films 16 and 22 are treated by a chemical vapor deposition (CVD) method using a secondary saturated hydrocarbon compound and a heterocyclic compound containing a nitrogen atom and a carbon atom.
Specifically, after the substrates 10 and 20 on which the inorganic alignment films 16 and 22 are formed are transferred into a chamber of a CVD apparatus (not shown), vacuum substitution is performed with nitrogen gas, and the inside of the chamber is made a nitrogen atmosphere.
Then, the substrates 10 and 20 are heated at a predetermined temperature (for example, 300 ° C.) and for a predetermined time (for example, 1 hour) to remove moisture latent in the inorganic alignment films 16 and 22.

Next, a predetermined amount (for example, as a heterocyclic compound containing a nitrogen atom and a carbon atom) and a glass container storing a predetermined amount (for example, 0.1 g) of 2-methylpentane as a secondary saturated hydrocarbon compound A glass container for storing imidazole of 300 μL or the like) is introduced into the chamber.
Then, the inside of the chamber is heated at a predetermined temperature (for example, 185 ° C.) and for a predetermined time (for example, 4 hours).
Thereby, 2-methylpentane and imidazole are evaporated, the carbon atom at the 2-position of 2-methylpentane is carbocationized, and the state in which protons are eliminated by this carbocationization is stably maintained by imidazole. Then, protons desorbed by carbocationization and silanol groups present on the surfaces of the inorganic alignment films 16 and 22 are combined, and the carbocationized 2-methylpentane is hydrogen-bonded to the surfaces of the inorganic alignment films 16 and 22. To be adsorbed.

Next, after the chamber is cooled to room temperature, the substrates 10 and 20 subjected to the surface treatment are carried out of the chamber in a nitrogen atmosphere, and further, for a predetermined temperature (for example, 300 ° C.) and for a predetermined time (for example, For several tens of minutes). This drying treatment causes a dehydration condensation reaction, and the carbocationized 2-methylpentane and the inorganic alignment films 16 and 22 are combined.
Then, the degree of hydrophobicity (contact angle with respect to water) of the surfaces of the inorganic alignment films 16 and 22 after the surface treatment is measured in an air atmosphere, and the series of treatments is completed.
In a series of processes by the CVD method using 2-methylpentane and imidazole, the contact angle of the surface of the inorganic alignment films 16 and 22 after the surface treatment with respect to water is, for example, about 103.2 °.

  In the above-described series of treatments, when imidazole is omitted, the contact angle of water on the surfaces of the inorganic alignment films 16 and 22 after the surface treatment is, for example, about 33.4 °, which is 2 of 2-methylpentane. The degree of hydrophobicity of the inorganic alignment films 16 and 22 after the surface treatment (contact angle with water) due to the difficulty of stably maintaining the proton desorption state due to carbocationization of the carbon atom at the position ) Cannot be improved.

In the above-described embodiment, the surface treatment for the inorganic alignment films 16 and 22 is performed with 2-methylpentane. However, the present invention is not limited to this. For example, 2-methylheptane, 2-methyloctane, 2-methylnonane, etc. The β-position hydrogen can be easily released by providing a functional group that relatively attracts electrons, and polarization existing on the surfaces of the inorganic alignment films 16 and 22 using so-called β-hydrogen elimination. Any secondary saturated hydrocarbon compound that binds to the surfaces of the inorganic alignment films 16 and 22 by a dehydration condensation reaction with the hydroxyl group thus formed may be used.
For example, in the above-described series of treatments, when 2-methylheptane is used instead of 2-methylpentane, the contact angle of water on the surfaces of the inorganic alignment films 16 and 22 after the surface treatment is, for example, 88.5 °. When 2-methyloctane is used instead of 2-methylpentane, the contact angle of the surface of the inorganic alignment films 16 and 22 after the surface treatment with respect to water is, for example, about 63.7 °.

In the above-described embodiment, the inorganic alignment films 16 and 22 made of silicon oxide such as SiO ₂ or SiO are formed on the substrates 10 and 20, but the present invention is not limited to this. For example, Al ₂ O _3. Inorganic alignment films 16 and 22 made of other materials such as metal oxides such as ZnO, MgF, and ITO may be formed.

As described above, according to the liquid crystal device 100 according to the present embodiment, the inorganic alignment films 16 and 22 formed on the inner surfaces of the pair of TFT array substrates 10 and the counter substrate 20 include the secondary saturated hydrocarbon compound and Since the surface is treated by a CVD method using a heterocyclic compound containing a nitrogen atom and a carbon atom, the surface treated inorganic material is treated, for example, when the surface is treated with a silane coupling agent. It is possible to prevent the water repellency of the inorganic alignment films 16 and 22 from being lowered due to hydrogen bonding due to oxygen atoms present on the surfaces of the alignment films 16 and 22, and to improve the moisture resistance of the liquid crystal device 100. .
In addition, the inorganic alignment films 16 and 22 that are formed by oblique deposition and have a relatively weak alignment control force are subjected to surface treatment with a secondary saturated hydrocarbon compound and a heterocyclic compound, thereby controlling the alignment. The power can be improved.

Further, according to the alignment film forming method according to the present embodiment, the second β-position hydrogen is easily desorbed from the inorganic alignment films 16 and 22 formed on the inner surfaces of the pair of TFT array substrates 10 and the counter substrate 20. Surface treatment with a high-grade saturated hydrocarbon compound prevents oxygen atoms from being included in the inorganic alignment films 16 and 22 after the surface treatment, and the inorganic alignment after the surface treatment due to hydrogen bonding due to oxygen atoms. It is possible to prevent the water repellency of the surfaces of the films 16 and 22 from being lowered.
Moreover, in the surface treatment with the secondary saturated hydrocarbon compound, imidazole is used as the heterocyclic compound containing a nitrogen atom and a carbon atom, so that the carbocationization of the carbon atom at the 2-position of the secondary saturated hydrocarbon compound is achieved. The proton desorption state due to the hydrogen can be stably maintained, and the secondary saturated hydrocarbon compound can be easily adsorbed on the surfaces of the inorganic alignment films 16 and 22 by hydrogen bonding. 22 surface treatment can be performed efficiently.

(projector)
Next, a projector as an embodiment of the electronic apparatus of the invention will be described with reference to FIG. FIG. 6 is a schematic configuration diagram showing a main part of the projector. This projector includes the liquid crystal device 100 according to the above-described embodiment as light modulation means.

  The projector includes, for example, a light source 810, dichroic mirrors 813, 814, reflection mirrors 815, 816, 817, an incident lens 818, a relay lens 819, an exit lens 820, and each light modulation unit 822 including a liquid crystal device 100. , 823, 824, a cross dichroic prism 825, and a projection lens 826, and the light source 810 includes a lamp 811 such as a metal halide and a reflector 812 that reflects the light of the lamp 811. Yes.

The dichroic mirror 813 transmits red light contained in white light from the light source 810 and reflects blue light and green light. The red light transmitted through the dichroic mirror 813 is reflected by the reflection mirror 817 and is incident on the light modulation means 822 for red light. The green light reflected by the dichroic mirror 813 is reflected by the dichroic mirror 814 and is incident on the light modulating means 823 for green light. Further, the blue light reflected by the dichroic mirror 813 passes through the dichroic mirror 814.
For blue light, in order to prevent light loss due to a relatively long optical path, a light guide unit 821 including a relay lens system including an incident lens 818, a relay lens 819, and an exit lens 820 is provided. Blue light is incident on the light modulating means 824 for blue light through the light guiding means 821.

  The three color lights modulated by the respective light modulation means 822, 823, and 824 are incident on the cross dichroic prism 825. This cross dichroic prism 825 has four right-angle prisms bonded together, and a dielectric multilayer film reflecting red light and a dielectric multilayer film reflecting blue light are X-shaped at the interface between adjacent right-angle prisms. It is formed in a shape. These dielectric multilayer films combine the three color lights to form light representing a color image. The synthesized light is projected on the screen 827 by the projection lens 826 which is a projection optical system, and the image is enlarged and displayed.

  According to this projector, since the liquid crystal device 100 having the inorganic alignment films 16 and 22 excellent in light resistance and heat resistance is provided, the inorganic alignment films 16 and 22 are deteriorated by strong light or heat irradiated from the light source 810. Doing that is suppressed. Further, according to this projector, since the liquid crystal device 100 that reliably prevents the deterioration of the liquid crystal 50 due to moisture (humidity) and has a long life is provided, the electronic device itself can also have a long life. It will be highly reliable.

It is a top view which shows schematic structure of the liquid crystal device which concerns on one Embodiment of this invention. It is sectional drawing of TFT which concerns on one Embodiment of this invention. 1 is an equivalent circuit diagram of a liquid crystal device according to an embodiment of the present invention. It is a principal part top view of TFT which concerns on one Embodiment of this invention. It is a figure which shows schematic structure of the oblique vapor deposition apparatus which concerns on one Embodiment of this invention. 1 is a plan view showing a schematic configuration of a projector according to an embodiment of the invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 TFT array substrate (substrate) 16 Inorganic alignment film (base film, alignment film) 20 Opposite substrate (substrate) 22 Inorganic alignment film (base film, alignment film) 100 Liquid crystal device

Claims (4)

A base film made of an inorganic material and having a polarized hydroxyl group on the surface is formed on the substrate,
By vapor-phase chemical growth method using a secondary saturated hydrocarbon compound and a heterocyclic compound containing a nitrogen atom and a carbon atom, the carbon atom at the 2-position of the secondary saturated hydrocarbon compound is carbocationized, A proton desorbed by carbocationization and the hydroxyl group present on the surface of the base film, and the secondary saturated hydrocarbon compound carbocationized and the base film are combined to form an alignment film; A method for forming an alignment film, comprising: performing a surface treatment on the base film. The alignment film forming method according to claim 1, wherein the base film is formed by oblique vapor deposition or sputtering. A liquid crystal device having a liquid crystal sandwiched between a pair of substrates facing each other, each inner surface of the pair of substrates having an inorganic alignment film,
The surface of the inorganic alignment film is treated by a vapor phase chemical growth method using a secondary saturated hydrocarbon compound and a heterocyclic compound containing a nitrogen atom and a carbon atom. An electronic apparatus comprising the liquid crystal device according to claim 3.

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