JP2008116220A - Apparatus for testing semiconductor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce time and cost relating to the testing process by improving the uniformity and the precision of the burn-in test conditions and widening the testing items executable during a burn-in test. <P>SOLUTION: A apparatus for testing burn-in comprises a DUT socket directly controlling temperature for each semiconductor device, without the use of a thermostatic chamber; a testing control device comprising a temperature control means for controlling the temperatures, an electrical condition imparting means for imparting electrical conditions and a discrimination information imparting means for imparting discrimination information for the test subject semiconductor device loaded on the DUT socket; and a host control device, capable of communicating with the testing control device, having a control means for comprehensively controlling the burn-in test as a whole for the test subject semiconductor device loaded on the DUT socket. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor test apparatus for performing a burn-in test performed in a semiconductor device inspection process.

  A burn-in test of a semiconductor device is performed mainly for the purpose of eliminating initial defects of a DUT (Device Under Test). Usually, a plurality of DUTs (devices under test) are placed in a thermostat, and the same environmental conditions and electrical conditions are given to all the DUTs, and a long-term constant temperature operation test is performed.

  However, in practice, these conditions given to individual DUTs cannot be uniform. Factors include temperature unevenness in the thermostat, uneven power supply wiring length, and signal wiring length. By eliminating these factors, the accuracy of the burn-in test can be improved.

  As techniques for improving the accuracy of the burn-in test, for example, Patent Documents 1 to 6 listed below disclose techniques for individually controlling the temperature by incorporating a thermostatic mechanism in the DUT socket.

  Patent Document 1 discloses a heater block that can be incorporated in a socket for measuring semiconductor components. It is an object of the present invention to shorten the set time for adjusting the temperature of a part to be measured and increase the degree of freedom of measurement circuit layout.

  Patent Document 2 discloses an inspection apparatus for a solid-state image sensor that measures and inspects element characteristics of a solid-state image sensor while holding a surface-mount type solid-state image sensor with a socket and heating it with a device heater to maintain a predetermined temperature. .

  Patent Document 3 discloses a burn-in apparatus that can individually control the temperature of a plurality of devices under measurement and has a quick response to a temperature change of the device under measurement with respect to the temperature control. The apparatus includes a burn-in socket in which a fitting port in which a device to be measured is accommodated is formed on the upper surface, a heat block that is detachably fitted in the fitting port and contacts the upper surface of the device to be measured accommodated in the fitting port, A heater disposed inside the heat block and a heat block thermal sensor are provided.

  Patent Document 4 discloses a burn-in device that performs temperature adjustment for each semiconductor device. This apparatus includes a plurality of sockets that house semiconductor devices, heaters formed in the sockets, and a control unit that controls the amount of heat generated by the heaters, and adjusts the temperature for each semiconductor device.

  Patent Document 5 discloses a socket for a semiconductor device inspection apparatus for accurately detecting and accurately controlling the temperature of a chip portion of a semiconductor device. The socket corresponds to the socket body having a cavity for housing the semiconductor device, an end portion connected to the chip portion of the semiconductor device housed in the cavity by a member having high thermal conductivity, and the end portion. A contact portion disposed in the same manner.

  Patent Document 6 discloses a semiconductor device inspection apparatus in which an IC socket is provided with a heater, a temperature sensor, and a standard temperature sensor. The CPU stores the difference between the temperature sensor and the standard temperature sensor as a correction value, and sets the temperature with high accuracy.

  Further, in Patent Document 7, a test auxiliary device is provided in the vicinity of a test circuit board that exchanges signals with a semiconductor integrated circuit under test, and the test auxiliary device selects a test pattern written in a memory to select the semiconductor integrated device under test. A semiconductor integrated circuit test apparatus for generating a test input pattern signal for a circuit, determining a test output pattern signal output from the semiconductor integrated circuit under test, and testing a digital circuit of the semiconductor integrated circuit under test is disclosed. Has been.

Further, Patent Document 8 discloses a tester board that can be accommodated in a chamber, a socket that is mounted on the first main surface of the tester board and on which a semiconductor device to be tested is mounted, and a second tester board. Device test means mounted on the main surface and inputting a predetermined test signal to the semiconductor device and evaluating the semiconductor device based on the output signal output from the semiconductor device according to the test signal; and device test means And a semiconductor device inspection apparatus for performing a burn-in test and a characteristic test of the semiconductor device while heating the semiconductor device mounted in the socket in the chamber and cooling the device test means with the heat dissipation means. Are listed.
JP 2002-196034 A JP 2001-165992 A JP 2000-304804 A JP 2000-212234 A JP 2000-284020 A Japanese Patent Laid-Open No. 05-029428 JP 2004-257898 A Japanese Patent No. 3767829

  In the conventional burn-in test using a thermostat, the distance between the DUT in the thermostat and the electrical test equipment placed outside the thermostat to supply power and signals to them increases, causing a voltage drop. Problems such as signal attenuation, signal speed limitation, and the like degrade test quality.

  In addition, it is difficult to equalize the signal transmission distance between the electrical test equipment and each DUT, and in fact, due to temperature unevenness in the thermostatic chamber, it actually gives strict condition uniformity to all DUTs. I can't.

  Furthermore, the heating by the thermostat is a temperature control using the gas surrounding the DUT as a medium, and cannot be controlled in consideration of the self-heating of the DUT itself. When the DUT executes various test patterns, the power consumption of the DUT changes for each test pattern, and as a result, the self-heating amount also changes. That is, the temperature of the DUT cannot be kept constant.

  Therefore, a method of performing individual temperature management for individual DUTs without using a thermostatic chamber as in known examples has been studied. However, problems still remain with respect to signal accuracy and voltage drop, which are factors that affect test quality.

  The semiconductor test apparatus of the present invention improves the uniformity and accuracy of the test conditions and fundamentally solves these problems. The purpose of this is to broaden the range of test items that can be performed during the burn-in test and to reduce the time and cost associated with the inspection process.

  The semiconductor test apparatus of the present invention is an apparatus for performing a burn-in test on a semiconductor device to be tested, and a DUT socket for performing temperature control on the mounted semiconductor device and a DUT socket on which the semiconductor device to be tested is mounted. In contrast, a test control device comprising a temperature control means for performing temperature control, an electrical condition providing means for applying electrical conditions, and an identification information providing means for providing identification information, and can communicate with the test control apparatus And a control means for controlling the overall burn-in test by controlling the temperature control, the application of electrical conditions, and the application of identification information to the semiconductor device to be tested mounted on the DUT socket. And a host control device.

  The present invention is a burn-in apparatus that does not use a thermostatic chamber. A DUT socket having a built-in heater and a thermal sensor and a configuration in which a test control device is arranged in the vicinity of the DUT socket are characterized. The test control device provides functions such as constant temperature control, power supply, clock supply, and I / O port control for each DUT, and controls the sequence of the burn-in test. In addition, each has an ID assignment function and a communication function, and is remotely operated from the host control device. A burn-in test module can be configured with a set of DUTs connected to one test control apparatus, and a large-scale burn-in apparatus can be configured by connecting a plurality of modules.

  As usual, as long as a DUT is placed in a thermostat and an electrical test facility is placed outside the thermostat, it is physically difficult to reduce the distance between the DUT and the electrical test facility. In the present invention, since the environmental conditions are set by the heater and thermocouple mechanism built in the DUT socket, a thermostat is not required, and the DUT and the electrical test facility can be brought close to each other.

  Furthermore, by distributing the functions of the conventional electrical test equipment by centralized control and downsizing each test control device for each DUT, it becomes possible to provide a test control device in the vicinity for each DUT socket.

  The test control device constitutes one burn-in test module paired with the DUT socket. The test control device performs temperature control, power supply, clock supply, test signal operation, and the like for the DUT. These are performed independently for each module. It is also possible to make a burn-in test module by combining a test control device and a plurality of DUT sockets.

  Since the wiring of the DUT socket is a connection with only one test control device as a set, it is easy to capture minute electrical changes that occur in each DUT. Further, an abnormality occurring in a module corresponding to a different DUT does not affect a module corresponding to another DUT.

Each test control apparatus has a unique ID assignment function and communication means. This communication means has a communication function with the host control device, and the host control device can communicate with the test control device designated by the ID.
When one test control device is connected to a plurality of DUT sockets to form a burn-in test module, an ID for the test control device and an ID for identifying a plurality of DUT sockets connected to the test control device are given. Can do.

  The test control device stores the test conditions (temperature given to the DUT, power supply voltage, test signal) and the test procedure given from the host control device via the communication means in the memory, and independently based on the information stored in the memory. Run the burn-in test under control. Also, in response to an instruction from the host PC, a test start, a status return during execution, and a test result are returned.

  The host control device is communicable with the test control device, assigns identification information to the semiconductor device to be tested attached to the DUT socket, and controls temperature under different temperature conditions over different time courses. And a control means for performing overall control of the entire burn-in test in which various electrical conditions are applied in different time courses to perform various tests under various conditions.

  Various identification information (ID) is used to indicate the test conditions (temperature, power supply voltage, test signal applied to the DUT) and test procedure given from the host controller via the communication function, and the semiconductor device mounted on each DUT socket. Identify and differentiate different types of tests (eg so-called burn-in tests at high temperatures aimed at eliminating initial failures), giving different electrical conditions under different temperature conditions over different time courses Centralized control over semiconductor devices.

  For this reason, the test control device is mainly composed of a microcontroller, a plurality of variable power supplies, variable frequency oscillators, analog I / O ports (AD converters, DA converters), digital I / O ports, physical layers for power line communication, etc. Hardware and software such as a temperature control program, a communication control program, a test sequence control program, and a self-calibration program.

  In particular, the present invention relates to a configuration for making maximum use of the merit obtained by making the thermostat bath in the burn-in test unnecessary.

  In the semiconductor test apparatus of the present invention, temperature control is performed on the semiconductor device mounted on the DUT socket, and temperature control, application of electrical conditions, and identification information are performed on the DUT socket mounted with the semiconductor device by the test control apparatus. It is possible to control the entire burn-in test for the semiconductor device under test by communication from the control means of the host controller, and accurately manage the environmental and electrical conditions given to the semiconductor device under test. And test accuracy can be improved.

  In the prior art, a temperature difference of ± 3 ° C. to 5 ° C. has occurred in each DUT due to uneven temperature in the thermostat. In addition, since self-heating due to the operation of the DUT is not considered, there is a deviation of about + 10 ° C. to −5 ° C. between the set temperature of the thermostat and the actual DUT temperature. In the method of the present invention, the temperature control of the DUT is Since the test control device in the same module as the DUT controls the temperature of the heater mechanism and the heat sensor built in each socket, the temperature control with accurate and high-speed response including self-heating of the DUT is possible.

  In the prior art, since many DUTs are connected in parallel to a long power supply line, a potential difference due to a potential drop of several hundred mV occurs between the DUT close to the power supply and the DUT far from the power supply. The power is supplied from a variable power supply unit built in the test control apparatus installed immediately before. The test control device transforms the intermediate bus potential supplied from the host power supply device with a plurality of variable power supplies provided therein and supplies the transformed voltage to the DUT. Since the test controller and the DUT are close to each other, it is possible to provide a power supply environment that is not easily affected by voltage drop or noise.

  In the prior art, since many DUTs were connected in parallel to the clock line, the wiring impedance load was large and the clock speed was limited to about 20 MHz. However, in the method of the present invention, the clock signal supplied to the DUT is the latest. Supplied from a test control unit located in An arbitrary frequency can be generated by an oscillation circuit, a frequency divider, a frequency multiplier, and the like, and a high-speed and high-quality clock can be supplied.

  In the semiconductor test apparatus of the present invention, it is possible to give different environmental conditions and electrical conditions to each DUT. That is, since a plurality of test items can be distributed and executed in parallel, the number of test steps can be greatly reduced.

  Moreover, in the test for the purpose of quality control, the number of DUT bases can be reduced by accurate temperature control. In the prior art, due to temperature variations, it is difficult to grasp characteristics and trends without using a certain number of samples. However, accurate temperature management makes it possible to grasp characteristics and trends even with a small number of mother bodies.

  Moreover, since a thermostat is not used, an installation place is not chosen. Also, the scale can be freely changed from one module to several thousand modules (the upper limit of ID or the power is a physical limit). The same system configuration can be used from the office desk to the mass production factory inspection line. Since it is possible to mix DUT varieties, it is easy to deal with small quantities and many varieties.

  As described above, the present invention makes it possible to accurately manage the environmental conditions and electrical conditions given to the DUT, without using a thermostatic chamber in the burn-in test, and improve the test accuracy.

  Embodiments of the present invention will be described below with reference to the drawings.

  FIG. 1 shows an overall view of a burn-in test apparatus that is Embodiment 1 of the present invention. In FIG. 1, the burn-in test apparatus communicates with a plurality of DUT sockets 2 on which DUTs 1 are mounted, a test control apparatus 3 that tests the DUTs mounted on the DUT sockets 2, and a plurality of test control apparatuses 3. Is provided with a host control device 4 for overall control. The test control device 3 is arranged in the vicinity of the DUT socket 2. In FIG. 1, the test control device 3 is arranged adjacent to the DUT socket 2. However, if the test control device 3 is arranged near the DUT socket 2, the arrangement is changed to another arrangement relationship such as arrangement on both sides of the unit board. can do.

  FIG. 1 shows an example in which one test control device 3 and one DUT socket 2 are paired to form a burn-in test module, but the burn-in test device of the present invention basically has test control. It is sufficient that the apparatus 3 and the DUT socket 2 are provided. A burn-in test module is constituted by one test control apparatus 3 and a plurality of DUT sockets 2, and one test control apparatus 3 includes a plurality of burn-in test modules. A plurality of semiconductor devices (DUTs) 1 to be inspected mounted on the DUT socket 2 can be tested.

As shown in FIG. 1, when one test control device 3 and one DUT socket 2 are configured as a pair, signal processing between the test control device 3 and the DUT socket 2 becomes easy.
In addition, when there are many resources such as the number of pins of the DUT, it is possible to use a plurality of test control devices 3 so as to share the function corresponding to the pins for one DUT socket 2, and a cascade for that purpose. A connection function can be provided. In this case, one master test control device and a plurality of slave test devices are configured, and the master controls the power supply, I / O, CLK, etc. of the slave.

  The test control device 3 is a programmable sequencer having a communication function, and has a function of supplying power to the DUT 1, supplying CLK, inputting / outputting test signals, and determining test results.

  The DUT socket 2 has a mechanism that allows the DUT 1 to be attached and detached, and electrically connects each terminal of the DUT 1 and the terminal of the DUT socket 2 when mounted. The heater 8 and the thermal sensor 7 built in the DUT socket 2 are arranged at a position in contact with the surface of the DUT 1. The thermal sensor 7 is not limited to a thermocouple or the like, and any method may be used as long as it can capture the temperature change of the DUT 1. For example, when the DUT 1 includes a thermal diode, the temperature of the die (semiconductor chip) in the package can be directly measured. Therefore, by using this, temperature control with higher accuracy becomes possible.

  A terminal of the DUT socket 2 is connected to the test control device 3. A detachable connector may be interposed between the DUT socket 2 and the test control device 3.

  The temperature control is performed on the DUT 1 by controlling the power to the heater 8 while measuring the temperature change of the DUT 1 with the thermal sensor 7. For this reason, it becomes possible to return a response to the temperature change of the DUT 1 itself at high speed, and the control accuracy is improved.

  The module composed of the DUT socket 2 and the test control device 3 basically has only two types of electrical connection with the unit board: the power supply 6 and the communication line. In addition, by using the power line communication apparatus 5, it can connect only with two of the power supply 6 and GND. As a result, the connection between the unit substrate and the module is facilitated, and the unit substrate can be shared.

  The test control device 3 is supplied with power of about 15 V from the host power supply device 6. The power line serves as a communication line with the host PC 4 by the power line communication device 5. Each test control device 3 has an ID and can perform one-to-one bidirectional communication with the host PC 4.

  In the configuration according to the present invention, all terminals of the DUT 1 are connected to the test control device 3 in the vicinity, and a direct connection between the DUT 1 and the host control device 4 is not required. The test control device 3 and the host control device 4 are connected by some communication means.

  The test control device 3 is supplied with power from the host power supply device 6. The plurality of test control devices 3 are connected in parallel. The voltage supplied from the host power supply device 6 may have a potential drop due to wiring resistance.

  The communication method between the test control device 3 and the host control device 4 may be wired / wireless. In the method of directly pulling out the control line from the host, a control line switching mechanism is required, but by sending a command to each control device by communication and executing it, the test control device 3 allows the DUT 1 mounted in the DUT socket 2 to It has functions for temperature control, power supply control, clock supply, and test vector supply.

Further, a communication function, an ID function, and a temperature control unit for the host control device 4 perform temperature sensing and control with respect to a temperature control mechanism built in the DUT socket 2.
The test controller 3 downloads a burn-in test sequence from the host PC by the power line communication device 5 and executes it in a stand-alone manner using the thermal sensor in contact with the surface of the DUT 1 and information on the thermal sensor as inputs.

  The power supply for the test control device 3 is supplied from the host power supply 6 as an intermediate bus potential of about 15 V via a rack or unit board. The test control device 3 includes a plurality of voltage regulators, and generates a power source required by itself and a variable power source to be supplied to the DUT 1 as necessary.

  In order to minimize the distance between the DUT 1 and the test control device 3, the configuration in which the test control device 3 is built in the DUT socket 2 is most effective. However, it is a condition that the heat generated by the DUT socket 2 does not affect the behavior of the test apparatus 3.

  The distance between the DUT socket 2 and the test control device 3 must be determined on condition that the heat generated by the DUT socket 2 does not affect the behavior of the test device 3. It varies depending on factors such as thermal insulation methods and component characteristics.

FIG. 2 is an enlarged explanatory view of a burn-in test module including the DUT socket 2 and the test control device 3 of the burn-in test apparatus of FIG.
In FIG. 2, a semiconductor device (DUT) 1 to be tested is mounted in a DUT socket 2. The DUT socket 2 includes a thermal sensor 7 and a heater 8. Although not shown, a heat conduction mechanism for conducting heat is provided between the heater 8 and the DUT 1 and between the thermal sensor 7 and the DUT 1, and the heater 8 and the thermal sensor 7 are connected to the DUT 2. A tension mechanism is provided for close contact. The heater built in the DUT socket 2 can be configured using a PTC thermistor or a Peltier element.

  The test control device 3 is a programmable sequencer provided with a communication means 9, and includes a DUT power supply 15 to be supplied to the DUT 1, a CLK supply 17, a test signal I / O (input / output interface) 18, and a DA (digital / analog converter). ) 17.

  The test control device 3 controls the electric power to the heater 8 by the heater power source 20 while measuring the temperature change of the DUT 1 with the digital data obtained by converting the signal from the thermal sensor 7 by an AD (analog-digital converter) 19. Thus, temperature control is performed on the DUT 1. The temperature control means controls the electric power to the heater 8 based on the measured digital temperature data and controls the temperature of the DUT 1.

  The test control device 3 includes a power supply 14 to which a power of about 15 V is supplied from the host power supply 6. The test control device 3 and the host control device 4 are connected by the communication means 9.

  The communication method between the test control device 3 and the host control device 4 may be wired / wireless. A command is sent from the host control device to each control device by communication to be executed. The test control device 3 has a function of performing temperature control, power supply control, clock supply, and test vector supply to the DUT 1 in accordance with the transmitted command.

  The test control device 3 includes a communication means 9, a CPU 10, a temperature control means 11, a memory 12, and an ID (identification) device 13, and the temperature control built in the DUT socket 2 with respect to the host control device 4. Provides temperature sensing and control for the mechanism. The information is input from the thermal sensor 7 in contact with the surface of the DUT 1, and the test control device 3 downloads the burn-in test sequence (processing procedure) from the host control device 4 to the memory 12 by the power line communication device 5, and this sequence (processing procedure). Based on the above, the test control device 3 is a stand-alone device, and executes a burn-in test on the semiconductor device (DUT) 1 to be tested mounted on the DUT socket 2 in the burn-in test module.

  FIG. 2 shows an example of a pair of one test control device and one DUT socket. As described above, the burn-in test device of the present invention basically includes a plurality of test control devices. 3 and a plurality of DUT sockets 2 are sufficient, and one test control device 3 and a plurality of DUT sockets 2 constitute a burn-in test module, and one test control device 3 is included in the burn-in test module. A plurality of semiconductor devices (DUTs) 1 to be inspected mounted on a plurality of DUT sockets 2 can be tested.

As shown in FIG. 2, it is also possible to configure a burn-in test module by pairing one test control device 3 and one DUT socket 2. It is also possible to use a plurality of test control devices 3 so as to share corresponding functions.
The test control device 3 includes an ID identification device 13, and not only gives identification information (ID) to the test control device 3, but also gives identification information (ID) to the DUT socket or DUT. can do. Furthermore, various types of tests performed on the DUT, different time courses, different temperature conditions, different electrical conditions, etc. are identified by various kinds of identification information (ID) and spatially arranged. Different types of burn-in tests, characteristic tests, etc. can be performed on different DUTs over different time courses.

FIG. 3 is a photograph of the appearance of a burn-in test unit including a plurality of DUT sockets 2 and a plurality of test control devices 3. In FIG. 3, the test control device 3 is two-dimensionally arranged in the vicinity of the DUT socket 2. In FIG. 3, the DUT socket 2 and the test control device 3 are arranged in a pair, but the arrangement relationship between the DUT socket 2 and the test control device 3 is not limited to that shown in the figure, and one test control device 3 is provided. When testing a plurality of DUTs in a plurality of DUT sockets 2 or when testing a single DUT mounted on one or a plurality of DUT sockets 2 by a plurality of test control devices 3, Different spatial arrangements can be made.
In FIG. 3, the DUT socket 2 and the test control device 3 are arranged on one side of the unit substrate. However, the DUT socket 2 and the test control device 3 can be arranged on both sides of the unit substrate. It is.

  FIG. 4 shows a specific example of the DUT socket 2 used in the burn-in test apparatus of the present invention. 4 is a front sectional view showing a state where the lid 21 and the semiconductor device 22 are separated, and the lower side of FIG. 4 is a top view of the heat conduction mechanism 26 and the probe pin 25, and the heat conduction mechanism 26 and A left side view, a front view, and a right side view of the PTC thermistor 29 are shown.

  The DUT socket shown in FIG. 4 includes a socket body 23, a lid 21 that covers the top of the socket body 23, probe pins 25 that can be connected to signal terminals of the semiconductor device 22, a PTC thermistor 29, an upper heat conduction plate 26a, and a lower heat. A heat conduction mechanism 26 having a conductive plate 26b is included. The socket body 23 has a side frame and a bottom plate, and is placed on the base plate 35. The upper heat conductive plate 26a includes a vertical plate portion and a horizontal plate portion extending in the horizontal direction therefrom. A flat PTC thermistor 29 is disposed between the horizontal plate portion of the upper heat conducting plate 26a and the horizontal plate portion of the lower heat conducting plate 26b.

  In the DUT socket of FIG. 4, the graphite sheet 32 is disposed on the upper surface of the horizontal plate-like portion of the upper heat conducting plate 26 a, and the semiconductor device 22 can be disposed on the upper side of the graphite sheet 32. The horizontal plate-like portion of the upper heat conducting plate 26a is made elastically displaceable in the vertical direction and transfers heat to the semiconductor device 22 via the graphite sheet 32. In the DUT socket of FIG. 4, the heat conduction mechanism 26 is formed of a material having a merit conductivity of 236 W / m · K to 403 W / m · K. The PTC thermistor 29 is supplied with a DC voltage of 1.5 V to 20.0 V and is maintained below the Curie point by a temperature control mechanism.

  The DUT socket of FIG. 4 is applied to a PLCC (P1astic Leaded Chip Carrier) package device. In the DUT socket of FIG. 4, the signal terminal of the semiconductor device 22 is pressed against and electrically connected to the probe pin 25 by the socket lid 21. In order from the top, the heater mechanism includes a graphite sheet 32, a thermocouple sensor 40, an L-shaped upper heat conduction plate 26a, a PTC thermistor 29, and a horizontal plate-like portion of the L-shaped lower heat conduction plate 26b, an elastic support (tension). The mechanism) 31 has a laminated structure. The DUT socket of FIG. 4 has a horizontal PTC thermistor 29 built in the socket body 23, and can be called a “horizontal built-in type”.

  In the description of the embodiment of FIG. 4, the graphite sheet 32, the thermocouple sensor 30, the L-shaped upper heat conductive plate 26a, the PTC thermistor 29, and the horizontal plate-shaped portion of the L-shaped lower heat conductive plate 26b, The heater mechanism in which the elastic support body (tension mechanism) 31 is stacked is disposed below the semiconductor device 22, but the same configuration is changed to be disposed between the lid body 21 above the semiconductor device 22. can do. Further, it is possible to change the same configuration so as to be arranged both above and below the semiconductor device 2. As the heater, a Peltier element or the like can be used instead of the PTC thermistor 29.

  FIG. 5 shows another specific example of the DUT socket used in the burn-in test apparatus of the present invention. 5 is a front sectional view showing the semiconductor device 22 separated, and the lower side of FIG. 5 is a top view, a side view, and a front view of the mature conduction mechanism 26 and related parts.

The DUT socket illustrated in FIG. 5 includes a socket body 23, a lid 21 that covers the upper portion of the socket body 23, a tray 24 on which the semiconductor device 22 can be placed, a probe pin 25 that can be connected to a signal terminal of the semiconductor device 22, A PTC thermistor 29 and a heat conduction mechanism 26 are included.
The tray 24 is supported by the socket main body 23 via the spring 28 and can be elastically displaced downward when the semiconductor device 22 is placed. The heat conduction mechanism 26 includes a vertical plate-like portion and a horizontal plate-like portion extending horizontally from the vertical plate-like portion, and carries a PTC thermistor 29 and a thermocouple sensor 30 and is elastic to the tray 24 and has an elastic silicone rubber adhesive It is fixed by. When the lid 21 is moved from the open position (upper side in FIG. 5) to the closed position, the lid 21 contacts the upper surface of the semiconductor device and moves the semiconductor device downward.

  In the DUT socket illustrated in FIG. 5, when the semiconductor device 22 is placed on the tray 24 and the signal terminal of the semiconductor device 22 is connected to the probe pin 25, the horizontal plate-like portion of the heat conduction mechanism 26 is replaced with the graphite sheet 32. The heat from the PTC thermistor 29 is transferred to the semiconductor device 22 via In the DUT socket of FIG. 5, the PTC thermistor 29 has a plate shape and is arranged in parallel to the vertical plate portion of the heat conduction mechanism 26. In the DUT socket of FIG. 5, the heat conduction mechanism 26 is formed of a material having a heat conductivity of 236 W / m · K to 403 W / m · K. The PTC thermistor 29 is supplied with a DC voltage of 1.5 V to 20.0 V and is maintained below the Curie point by the temperature tree mechanism.

  The DUT socket of FIG. 5 is suitable as a fine-pitch DUT socket, and the tension mechanism that presses the horizontal plate-like portion of the holding means of the PTC thermistor 29 and the heat conduction mechanism 26 against the semiconductor device 22 is an elastic material (adhesive). The configuration is simplified. The DUT socket of FIG. 5 has a structure in which the PTC thermistor 29 is placed directly under the semiconductor device 22 and can therefore be called “vertically built-in type”.

  In the embodiment of FIG. 5 described above, the heater mechanism is disposed below the semiconductor device 22, but the same configuration is changed so as to be disposed between the lid 21 above the semiconductor device 22. Is also possible. As the heater, a Peltier element or the like can be used instead of the PTC thermistor 29.

  In a manufacturing factory that mass-produces semiconductor test equipment, a test control device arranged in the vicinity of a DUT socket is used as a unit module, a unit board on which a plurality of modules can be mounted, a rack on which a plurality of unit boards are mounted, The semiconductor test equipment consists of a power supply that supplies power to each module, a power line communication mechanism that communicates between each module and the host controller using power supply wiring, and a host controller that can control all modules through communication. To do.

1 is an overall configuration diagram of a burn-in test apparatus according to a first embodiment of the present invention. FIG. 2 is an enlarged explanatory view of the burn-in test module of FIG. FIG. 3 is an external view of a burn-in test unit of the burn-in test apparatus according to the first embodiment of the present invention. FIG. 4 is a diagram illustrating a specific example of a DUT socket used in the burn-in test apparatus according to the second embodiment of the present invention. FIG. 5 is a diagram showing another specific example of the DUT socket used in the burn-in test apparatus according to the third embodiment of the present invention.

Explanation of symbols

1 DUT
2 DUT socket 3 Test control device 4 Host control device 5 Power line communication device 6 Power supply device 7 Thermal sensor 8 Heater 9 Communication means 10 CPU
11 Temperature Control Unit 12 Memory 13 ID Device 14 Power Supply 15 DUT Power Supply 16 CLK Supply 17 DA
18 I / O
19 AD
20 Heater Power Supply 21 Lid 22 Semiconductor Device 23 Socket Body 24 Tray 25 Probe Pin 26 Thermal Conduction Mechanism 26a Upper Thermal Conduction Plate 26b Lower Thermal Conduction Plate 27 Elastic Body 28 Spring 29 PTC Heater 30 Thermocouple Sensor 31 Elastic Support (Tension Mechanism)
32 Graphite sheet 33 Insulating plate 34 Heater auxiliary plate 35 Substrate 40 Heater mechanism

Claims (10)

In a semiconductor test apparatus that performs a burn-in test on a semiconductor device to be tested,
A DUT socket for controlling the temperature of the mounted semiconductor device;
Test control including temperature control means for performing temperature control, electrical condition applying means for applying electrical conditions, and identification information providing means for providing identification information for a DUT socket equipped with a semiconductor device to be tested Equipment,
The entire burn-in test is controlled by controlling the temperature control, the application of electrical conditions, and the application of identification information to the semiconductor device to be tested that is communicable with the test control device and is mounted on the DUT socket. A host control device comprising control means for controlling;
A semiconductor test apparatus comprising: In a semiconductor test apparatus that performs a burn-in test on a semiconductor device to be tested,
A DUT socket for controlling the temperature of the mounted semiconductor device;
Test control including temperature control means for performing temperature control, electrical condition applying means for applying electrical conditions, and identification information providing means for providing identification information for a DUT socket equipped with a semiconductor device to be tested Equipment,
A host control device comprising a control means capable of communicating with the test control device and controlling the entire burn-in test for the semiconductor device to be tested mounted in the DUT socket;
Consisting of
The test control device stores various test conditions transmitted by communication with the host control device in a memory in the test control device, and independently controls the burn-in test based on the various test conditions stored in the memory. A semiconductor test apparatus comprising control means for performing In semiconductor test equipment that performs burn-in tests on semiconductor devices under test,
A DUT socket comprising: a heater; a temperature sensor; and a tension mechanism for bringing the heater and the temperature sensor into close contact with a semiconductor device to be tested.
For the DUT socket on which the semiconductor device to be tested is mounted, temperature control means for controlling the temperature by the heater and the temperature sensor, and applying electrical conditions to the semiconductor device to be tested mounted on the DUT socket A test control apparatus comprising: a condition providing means; and an identification means for assigning identification information to a test control apparatus and a DUT socket connected to the test control apparatus;
For each semiconductor device to be tested that is communicable with the test control apparatus and is mounted on the DUT socket, the identification information is used to control the temperature control according to different temperature conditions in different time courses and different times. A host control device having a control means for performing overall control of a burn-in test in which various tests are performed on a plurality of semiconductor devices to be tested under various conditions by performing control to give different electrical conditions in a process;
A semiconductor test apparatus comprising: The semiconductor test apparatus according to any one of claims 1 to 3,
A semiconductor test apparatus, wherein the test control apparatus and a DUT socket connected to the test control apparatus are arranged in the vicinity. The semiconductor test apparatus according to any one of claims 1 to 4,
A semiconductor test apparatus, wherein one or a plurality of DUT sockets are connected to one test control apparatus. The semiconductor test apparatus according to any one of claims 1 to 5,
A semiconductor test apparatus, wherein the test control apparatus is constituted by an LSI. A DUT socket for controlling the temperature of the mounted semiconductor device;
A host control apparatus comprising control means for controlling the entire burn-in test by controlling temperature control, application of electrical conditions, and application of identification information to a semiconductor device to be tested mounted in the DUT socket And a test control device used in a semiconductor test device composed of:
Means for communicating with the host controller;
The DUT socket on which the semiconductor device to be tested is mounted is provided with a temperature control means for performing temperature control, an electrical condition imparting means for imparting electrical conditions, and an identification information imparting means for imparting identification information. A test control device characterized by that. A DUT socket for controlling the temperature of the mounted semiconductor device;
A test control apparatus used in a semiconductor test apparatus configured with a host control apparatus including a control unit that performs overall control of the entire burn-in test for a test target semiconductor device mounted in the DUT socket,
Means for communicating with the host controller;
A temperature control means for performing temperature control, an electrical condition giving means for giving electrical conditions, and an identification information giving means for giving identification information, to a DUT socket equipped with a semiconductor device to be tested;
Control means for storing various test conditions transmitted by communication with the host control device in a memory in the test control device and independently controlling a burn-in test based on the various test conditions stored in the memory; A test control apparatus comprising: A DUT socket including a heater, a temperature sensor, and a tension mechanism for bringing the heater and the temperature sensor into close contact with the semiconductor device to be tested; and temperature control of the semiconductor device to be tested mounted on the DUT socket; A test control device used in a semiconductor test device configured with a host control device including a control unit that performs overall control of the entire burn-in test including the provision of electrical conditions and the provision of identification information,
Communication means for communicating with the host control device;
A temperature control means for performing temperature control, an imparting means for imparting electrical conditions, and an identification means for imparting identification information to a semiconductor device to be tested mounted on the DUT socket;
Attached to the DUT socket according to different types of identification information and different test conditions based on control signals including various test conditions and identification information transmitted from the control means for overall control of the burn-in test of the host controller It is characterized by performing various burn-in tests on different semiconductor devices to be tested under different temperature conditions under different temperature conditions and applying different electrical conditions over different time courses. Test control device. The test control apparatus according to any one of claims 7 to 9,
A test control apparatus, wherein the test control apparatus is constituted by an LSI.

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