JP2008109335A - Charge transfer device, solid-state imaging device, area sensor and linear sensor - Google Patents

Abstract

Provided is a CCD solid-state imaging device (area sensor) capable of suppressing image noise and realizing a reduction in driving frequency.
A light receiving unit arranged in a matrix, a vertical transfer unit that is provided for each vertical column of the light receiving unit, transfers charges from the light receiving unit, and transfers the transferred charges in a vertical direction, and a vertical transfer unit In a CCD type solid-state imaging device (area sensor) comprising a horizontal transfer unit that transfers charges from the horizontal direction and transfers the transferred charges in a horizontal direction and a charge detection unit that detects charges transferred from the horizontal transfer unit, The transfer unit has a first horizontal transfer unit and a second horizontal transfer unit separated by a channel stop region, and the first horizontal transfer unit and the second horizontal transfer unit have substantially the same length, The charge detection unit is disposed substantially at the center of the horizontal transfer unit.
[Selection] Figure 1

Description

  The present invention relates to a charge transfer device, a solid-state imaging device, an area sensor, and a linear sensor. Specifically, the present invention relates to a charge transfer device, a solid-state imaging device, an area sensor, and a linear sensor that can cope with high-speed driving by improving charge transfer efficiency.

Conventionally, in a video camera or an electronic camera, a CCD type solid-state imaging device (area sensor) using a CCD register as a charge transfer unit is used (for example, refer to Patent Document 1).
In this CCD type solid-state imaging device, a plurality of pixels provided with photoelectric conversion means (photodiode; PD) are arranged in a two-dimensional array matrix in an imaging region (image area) on a semiconductor substrate. Light incident on the pixel is photoelectrically converted by a photodiode to generate charges, and the charges are transferred to a floating diffusion (FD) unit provided in the output amplifier unit via the vertical transfer unit and the horizontal transfer unit, and the FD unit Is detected by a MOS transistor, converted into an electric signal, and amplified to be output as an imaging signal.

  FIG. 4 is a schematic diagram for explaining a conventional CCD solid-state imaging device (area sensor). The CCD solid-state imaging device 101 shown here includes an imaging unit 104a, an optical black region 104b, a horizontal transfer unit 105, and an output. The unit 107 is schematically configured. In addition, the imaging unit includes a light receiving unit 108 arranged in a matrix and a vertical transfer unit 109 that is provided for each vertical column of each light receiving unit and transfers charges from each light receiving unit. Further, here, the horizontal transfer unit is a two-phase drive horizontal transfer method generally used for horizontal transfer, and includes a horizontal electrode (1) (hereinafter referred to as H1) and a horizontal electrode (2) (hereinafter referred to as H2). Say).

  In the CCD solid-state imaging device configured as described above, the vertical transfer clocks Vφ1, Vφ2, Vφ3, and Vφ4 are applied from the timing signal generation circuit 103 to the vertical transfer unit, thereby being read from the light receiving unit to the vertical transfer unit. The charges are transferred in the vertical direction, and the horizontal transfer clocks Hφ1 and Hφ2 are applied from the timing signal generation circuit to the horizontal transfer unit, whereby the charges transferred to the horizontal transfer unit are transferred by the horizontal transfer unit for each field ( In FIG. 4, it is transferred in the left direction), converted into a voltage by the charge voltage converter (FD unit), and read out from the output unit as a light reception signal.

  FIG. 5 is a schematic diagram of potentials from the horizontal transfer unit 105 to the FD unit 110 of the solid-state imaging device. Charges are transferred by applying pulses for driving the horizontal transfer unit to H1 and H2, that is, horizontal transfer clock pulses. Then, when H1 is turned off, charges are transferred from the horizontal transfer unit to the FD unit. Note that the charge accumulated in the FD portion is reset by turning on a reset gate (hereinafter referred to as RG) after the charge is transferred to the FD portion.

  6 is a schematic diagram showing the timing of each pulse. In FIG. 6, symbol Hφ1 is the operation timing of the driving pulse of H1, symbol Hφ2 in FIG. 6 is the operation timing of the driving pulse of H2, and symbol φRG in FIG. FIG. 6 shows the operation timing of the drive pulse. The drive pulse is given to H1 and H2 at the timing indicated by the symbol Hφ1 and the symbol Hφ2 in FIG. 6, and the drive pulse is given to the RG at the timing indicated by the symbol φRG in FIG. An output waveform of the CCD solid-state imaging device (area sensor) indicated by reference sign OUT is obtained.

  Here, the area sensor has been described above. However, the solid-state imaging device includes not only an area sensor but also a linear sensor, and a pixel including a PD that accumulates an amount of charge corresponding to input light is one-dimensional. The CCD linear sensor having a charge transfer unit that transfers the charges from these pixels to the output unit side by the CCD charge transfer method is used in many fields such as copying, facsimile, OCR, pattern recognition, and various measurements. It is used.

  FIG. 7 is a schematic diagram for explaining a conventional CCD type solid-state imaging device (linear sensor). The first CCD linear sensor 202 in the CCD type solid-state imaging device 201 shown here is a photoelectric conversion unit (PD) (PD). A first reading gate for reading out the electric charges photoelectrically converted by the respective photoelectric conversion units on one side of the first sensor row. 205 and a first transfer register 206 for transferring charges read by the first read gate to the output unit side are provided, and the first overflow control barrier 207 is provided on the other side of the first sensor row. And an overflow drain 208 is provided.

  Here, in the first CCD linear sensor, the electric charge accumulated in each photoelectric conversion unit of the first sensor array in accordance with the input light is read out to the first transfer register via the first readout gate. The read charges are sequentially transferred by the first transfer register, converted into a signal voltage by the first charge voltage conversion unit 215, and further output as a signal through the first output unit 216 including an amplifier or the like. OUT1. Note that the electric charge overflowing the first overflow control barrier is discarded to the overflow drain.

  Further, the second CCD linear sensor 209 in the conventional CCD type solid-state imaging device (linear sensor) has a large number of photoelectric conversion units (pixels) composed of PDs linearly arranged in the same manner as the first CCD linear sensor described above. The second sensor row 210 is formed, and one side of the second sensor row is provided with a second readout gate 211 for reading out the charges photoelectrically converted by each photoelectric conversion unit and the second readout gate. A second transfer register 212 for transferring the read charges to the output unit side is provided, and the second overflow control barrier 213 and the overflow drain described above are arranged on the other side of the second sensor array. It is configured like this.

  Here, in the second CCD linear sensor, the electric charge accumulated in each photoelectric conversion unit of the second sensor array in accordance with the input light is read to the second transfer register via the second read gate. The read charges are sequentially transferred by the second transfer register, then converted to a signal voltage by the second charge-voltage conversion unit 217, and further output through the second output unit 218 including an amplifier or the like. OUT2. The charge overflowing the second overflow control barrier is discarded to the overflow drain shared with the first CCD linear sensor.

  By the way, in recent years, CCD-type solid-state imaging devices are increasingly driven at high speeds, and as the drive frequency increases, charge transfer and drive waveform generation become difficult. There has been proposed a technique for reducing the driving frequency by providing a plurality.

  FIG. 8 is a schematic diagram for explaining a conventional CCD solid-state imaging device (area sensor) having two output units. The CCD solid-state imaging device 101 shown here includes an imaging unit 104a, an optical black region 104b, A horizontal transfer unit 105, a first output unit 107a, and a second output unit 107b are roughly configured. The imaging unit includes a light receiving unit 108 arranged in a matrix and a vertical transfer unit 109 provided for each vertical column of each light receiving unit to transfer charges from each light receiving unit. The first output unit The second output unit is disposed at both ends of the horizontal transfer unit.

  Further, the horizontal transfer unit includes a first horizontal transfer unit 105a and a second horizontal transfer unit 105b separated by a channel stop region 105c provided at the center, and the first horizontal transfer unit and the second horizontal transfer unit. The part is composed of H1 and H2.

  In the CCD type solid-state imaging device (area sensor) configured as described above, by applying the vertical transfer clocks Vφ1, Vφ2, Vφ3 and Vφ4 from the timing signal generation circuit 103 to the vertical transfer unit, the light receiving unit to the vertical transfer unit. The charges read in the first horizontal transfer unit are transferred in the vertical direction, and the horizontal transfer clocks Hφ1 and Hφ2 are applied from the timing signal generation circuit to the first horizontal transfer unit and the second horizontal transfer unit. The electric charge transferred to is transferred by the first horizontal transfer unit for each field (transferred in the left direction in FIG. 8), converted into a voltage by the FD unit, and read out from the first output unit as a light receiving signal. It is. Similarly, the charges transferred to the second horizontal transfer unit are transferred by the second horizontal transfer unit for each field (transferred in the right direction in the drawing of FIG. 8), converted into a voltage by the FD unit, and received. A signal is read from the second output unit.

  As for the CCD solid-state imaging device (linear sensor), similarly to the above-described CCD solid-state imaging device (area sensor), the drive frequency can be reduced by providing a plurality of output units for one transfer register. Is possible.

JP 2004-96546 A

  However, when a plurality of output units are provided, a gain difference or the like due to an individual difference in the FD unit occurs, and variations in received light signals read from each output unit occur, resulting in image noise. .

  The present invention has been devised in view of the above points, and provides a charge transfer device, a solid-state imaging device, an area sensor, and a linear sensor that can suppress image noise and reduce the driving frequency. It is for the purpose.

  In order to achieve the above object, a charge transfer device according to the present invention includes a charge transfer unit that transfers charges photoelectrically converted in an imaging region, and a charge detection unit that detects charges transferred by the charge transfer unit. The charge transfer unit includes a first charge transfer unit and a second charge transfer unit separated by a channel stop region, the first charge transfer unit and the second charge transfer unit Are substantially the same length as each other, and the charge detection part is arranged at a substantially central part of the charge transfer part.

  To achieve the above object, a solid-state imaging device according to the present invention includes an imaging region in which a plurality of light receiving units are arranged, a charge transfer unit that transfers charges photoelectrically converted in the imaging region, In a solid-state imaging device including a charge detection unit that detects a charge transferred by the charge transfer unit, the charge transfer unit includes a first charge transfer unit and a second charge transfer unit separated by a channel stop region. The first charge transfer unit and the second charge transfer unit have substantially the same length, and the charge detection unit is disposed at a substantially central part of the charge transfer unit.

Here, since the single charge detection unit detects the charges transferred from the first charge transfer unit and the second charge transfer unit, there is no variation due to individual differences in the charge detection units.
In addition, since the first charge transfer unit and the second charge transfer unit have substantially the same length, charge transfer can be performed efficiently. That is, when the lengths of the first charge transfer unit and the second charge transfer unit are different, even if the transfer of the short charge transfer unit (for example, the first charge transfer unit) is completed, the length is long. The long charge transfer unit (for example, the second charge transfer unit) must wait for transfer, and as a result, the next transfer cannot be performed until the transfer of the long charge transfer unit ends. The transfer of the charge transfer unit having a long length determines the operation of the entire charge transfer unit. Therefore, by making the first charge transfer unit and the second charge transfer unit substantially the same length, efficient charge transfer as a whole is realized.

  In order to achieve the above object, an area sensor according to the present invention is provided for each light receiving unit arranged in a matrix and each vertical column of the light receiving unit, and charges are transferred from the light receiving unit. A vertical transfer unit that transfers the transferred charge in the vertical direction, a charge transfer from the vertical transfer unit, a horizontal transfer unit that transfers the transferred charge in the horizontal direction, and a charge transferred from the horizontal transfer unit The horizontal transfer unit includes a first horizontal transfer unit and a second horizontal transfer unit that are separated by a channel stop region, and the first horizontal transfer unit and the second horizontal transfer unit. The horizontal transfer unit has substantially the same length, and the charge detection unit is disposed at a substantially central portion of the horizontal transfer unit.

Here, since the single charge detection unit detects the charges transferred from the first horizontal transfer unit and the second horizontal transfer unit, there is no variation due to individual differences in the charge detection units.
Further, since the first horizontal transfer unit and the second horizontal transfer unit have substantially the same length, horizontal transfer of charges can be efficiently performed. That is, when the lengths of the first horizontal transfer unit and the second horizontal transfer unit are different, even if the horizontal transfer of the short horizontal transfer unit (for example, the first horizontal transfer unit) is completed, the length is long. Since the horizontal transfer of the next field cannot be performed without waiting for the horizontal transfer of the long horizontal transfer unit (for example, the second horizontal transfer unit), the horizontal transfer of the long horizontal transfer unit results. The horizontal transfer of the next field cannot be performed until the end of the operation, and the horizontal transfer of the horizontal transfer unit having a long length determines the operation of the entire horizontal transfer unit. Therefore, the first horizontal transfer unit and the second horizontal transfer unit have substantially the same length, and the horizontal transfer time of the first horizontal transfer unit and the horizontal transfer time of the second horizontal transfer unit are substantially the same. As a result, efficient horizontal transfer of charges is realized as a whole.

  In order to achieve the above object, a linear sensor according to the present invention includes a sensor array in which light receiving units are linearly arranged, and a charge transfer unit that transfers charges from the sensor array and reads the transferred charges. And a charge detection unit for detecting the charge transferred from the charge transfer unit, the charge transfer unit includes a first charge transfer unit and a second transfer unit separated by a channel stop region. The first charge transfer unit and the second charge transfer unit have substantially the same length, and the charge detection unit is disposed at a substantially central part of the charge transfer unit.

Here, since the single charge detection unit detects the charges transferred from the first charge transfer unit and the second charge transfer unit, there is no variation due to individual differences in the charge detection units.
In addition, since the first charge transfer unit and the second charge transfer unit have substantially the same length, charge transfer can be performed efficiently. That is, when the lengths of the first charge transfer unit and the second charge transfer unit are different, even if the transfer of the short charge transfer unit (for example, the first charge transfer unit) is completed, the length is long. Since the transfer of the next field cannot be performed without waiting for the transfer of the long charge transfer unit (for example, the second charge transfer unit), the next transfer until the transfer of the long charge transfer unit ends as a result. Therefore, the transfer of the long charge transfer unit controls the operation of the entire charge transfer unit. Therefore, the first charge transfer unit and the second charge transfer unit have substantially the same length, and the transfer time of the first charge transfer unit and the transfer time of the second charge transfer unit are substantially the same. Overall, efficient charge transfer is realized.

  The charge transfer device, the solid-state imaging device, the area sensor, and the linear sensor of the present invention described above can suppress the generation of image noise because there is no variation due to individual differences in the charge detection unit, and efficient charge generation. In order to realize the transfer, the driving frequency is reduced.

Hereinafter, embodiments of the present invention will be described with reference to the drawings to facilitate understanding of the present invention.
FIG. 1 is a schematic diagram for explaining a CCD solid-state imaging device (area sensor) which is an example of a solid-state imaging device to which the present invention is applied. The CCD solid-state imaging device (area sensor) 1 shown here is an imaging device. The unit 4a, the optical black area 4b, the horizontal transfer unit 5, and the output unit 7 are roughly configured. Further, the imaging unit includes a light receiving unit 8 arranged in a matrix and a vertical transfer unit 9 provided for each vertical column of each light receiving unit to transfer charges from each light receiving unit, and the output unit is horizontally transferred. It is arrange | positioned in the approximate center part of the part.

  Further, the horizontal transfer unit includes a first horizontal transfer unit 5a and a second horizontal transfer unit 5b separated by a channel stop region 5c provided at the center, and the first horizontal transfer unit and the second horizontal transfer unit. Is constituted by H1 and H2.

  Here, in the first horizontal transfer unit, H1 and H2 are alternately arranged so as to form an angle of 45 degrees with respect to the charge transfer direction, and the last stage in the charge transfer direction (output unit direction). H1 is arranged in. On the other hand, in the second horizontal transfer unit, H1 and H2 are alternately arranged so as to form an angle of 45 degrees with respect to the charge transfer direction, and at the final stage in the charge transfer direction (output unit direction). H2 is arranged.

  In the CCD type solid-state imaging device (area sensor) constructed as described above, the vertical transfer clocks Vφ1, Vφ2, Vφ3 and Vφ4 are applied from the timing signal generation circuit 3 to the vertical transfer units, so The charges read in the first horizontal transfer unit are transferred in the vertical direction, and the horizontal transfer clocks Hφ1 and Hφ2 are applied from the timing signal generation circuit to the first horizontal transfer unit and the second horizontal transfer unit. The charge transferred to is transferred by the first horizontal transfer unit for each field (transferred in the right direction in FIG. 1), converted into a voltage by the FD unit, and read from the output unit as a light reception signal. Similarly, the charges transferred to the second horizontal transfer unit are transferred by the second horizontal transfer unit for each field (transferred in the left direction in the drawing of FIG. 1), converted into a voltage by the FD unit, and received. It is read from the output unit as a signal.

  Here, the operation timing of the horizontal transfer clock Hφ1 is such that the drive pulse of RG (see symbol φRG in FIG. 2) changes from high level (H level) to low level (L level) as indicated by symbol Hφ1 in FIG. 2 has a rising timing (a timing indicated by a symbol t1 in FIG. 2) or a falling timing (a timing indicated by a symbol t2 in FIG. 2) only once after the timing (a timing indicated by a symbol t0 in FIG. 2). As shown by the symbol Hφ2 in FIG. 2, the operation timing of the transfer clock Hφ2 falls after the timing when the drive pulse of RG changes from the H level to the L level (timing indicated by the symbol t0 in FIG. 2) (in FIG. 2). Having the timing indicated by the symbol t1) or the rising timing (timing indicated by the symbol t2 in FIG. 2) only once It is. By applying each drive pulse as described above, the output waveform of the CCD solid-state imaging device (area sensor) indicated by the symbol OUT in FIG. 2 is obtained.

  FIG. 3 is a schematic diagram for explaining a CCD solid-state imaging device (linear sensor) as an example of a solid-state imaging device to which the present invention is applied. The first of the CCD solid-state imaging device (linear sensor) 11 shown here is shown in FIG. The CCD linear sensor 12 has a first sensor array 14 in which a large number of photoelectric conversion units (pixels) 13 made of photodiodes are linearly arranged, and each photoelectric sensor is arranged on one side of the first sensor array. A first readout gate 15 that reads out the charges photoelectrically converted by the conversion unit and a first transfer register 16 that transfers the charges read out by the first readout gate to the output unit side are provided. A first overflow control barrier 17 and an overflow drain 18 are disposed on the other side of the sensor row. In addition, the first output unit 19 is disposed at a substantially central portion of the first transfer register.

  Here, in the first CCD linear sensor, the electric charge accumulated in each photoelectric conversion unit of the first sensor array in accordance with the input light is read out to the first transfer register via the first readout gate. The read charges are sequentially transferred by the first transfer register, and then converted into a signal voltage by the first charge / voltage conversion unit 20, and further through the first output unit 19 including an amplifier and the like as a signal output. Become. Note that the electric charge overflowing the first overflow control barrier is discarded to the overflow drain.

  The first transfer register includes a first transfer register (1) 16a and a first transfer register (2) 16b separated by a channel stop region 16c provided in the center. 1) and the second transfer register are constituted by H1 and H2. In the first transfer register (1), H1 and H2 are alternately arranged so as to form an angle of 45 degrees with respect to the charge transfer direction, and the final charge transfer direction (output unit direction). H1 is arranged on the stage. On the other hand, in the first transfer register (2), H1 and H2 are alternately arranged so as to form an angle of 45 degrees with respect to the charge transfer direction, and at the end of the charge transfer direction (output portion direction). H2 is arranged on the stage.

  The second CCD linear sensor 22 in the CCD type solid-state imaging device (linear sensor) 11 to which the present invention is applied is a second sensor in which a large number of photoelectric conversion units (pixels) made of photodiodes are linearly arranged. A second reading gate 24 for reading out the electric charge photoelectrically converted by each photoelectric conversion unit and the electric charge read out by the second reading gate are output to one side of the second sensor row. A second transfer register 25 for transferring data to the unit side is provided, and the second overflow control barrier 26 and the overflow drain described above are arranged on the other side of the second sensor array. In addition, the second output unit 28 is disposed substantially at the center of the second transfer register.

  Here, in the second CCD linear sensor, the electric charge accumulated in each photoelectric conversion unit of the second sensor array in accordance with the input light is read to the second transfer register via the second read gate. The read charges are sequentially transferred by the second transfer register, converted into a signal voltage by the second charge-voltage converter 29, and further output as a signal through the second output unit 28 composed of an amplifier or the like. It becomes. The charge overflowing the second overflow control barrier is discarded to the overflow drain shared with the first CCD linear sensor.

  The second transfer register includes a second transfer register (1) 25a and a second transfer register (2) 25b separated by a channel stop region 25c provided at the center. 1) and the second transfer register (2) are constituted by H1 and H2. In the second transfer register (1), H1 and H2 are alternately arranged so as to form an angle of 45 degrees with respect to the charge transfer direction, and at the end of the charge transfer direction (output portion direction). H1 is arranged on the stage. On the other hand, in the second transfer register (2), H1 and H2 are alternately arranged so as to form an angle of 45 degrees with respect to the charge transfer direction, and at the end of the charge transfer direction (output portion direction). H2 is arranged on the stage.

  In the CCD solid-state imaging device (linear sensor) configured as described above, transfer clocks Hφ1 and Hφ2 are sent from a timing signal generation circuit (not shown) to the first transfer register (1) and the first transfer register (2). ), The charge read from the first sensor array to the first transfer register (1) is transferred by the first transfer register (1) for each field (right in the illustration of FIG. 3). And is converted into a voltage by the FD unit and read out from the first output unit as a light reception signal. Similarly, the charge read to the first transfer register (2) is transferred by the first transfer register (2) for each field (transferred in the left direction in FIG. 3), and the voltage is transferred by the FD unit. And is read out from the first output unit as a light reception signal.

  In addition, by applying transfer clocks Hφ1 and Hφ2 from the timing signal generation circuit (not shown) to the second transfer register (1) and the second transfer register (2), the second sensor array outputs the second clocks. The electric charge read out to the transfer register (1) is transferred by the second transfer register (1) for each field (transferred in the right direction in the drawing of FIG. 3), converted into a voltage by the FD section, and received light signal. Is read from the second output unit. Similarly, the electric charges read out to the second transfer register (2) are transferred by the second transfer register (2) for each field (transferred in the left direction in the illustration of FIG. 3), and voltage is transferred by the FD section. And is read out from the second output unit as a light reception signal.

  Here, the operation timings of the transfer clock Hφ1 and the transfer clock Hφ2 applied to the first transfer register and the second transfer register are as shown in FIG. 2, and by applying each drive pulse as shown in FIG. An output waveform of the CCD solid-state imaging device (linear sensor) indicated by reference sign OUT in FIG. 2 can be obtained.

In the CCD solid-state imaging device (area sensor) to which the present invention is applied, the first horizontal transfer unit and the second horizontal transfer unit each have half the number of transfer stages of the horizontal transfer unit, and the number of transfer stages is reduced. Can suppress transfer deterioration.
In the CCD solid-state imaging device (linear sensor) to which the present invention is applied, each of the first transfer register (1) and the first transfer register (2) has half the number of transfer stages of the first transfer register. Thus, transfer deterioration in the first transfer register can be suppressed by reducing the number of transfer stages. Similarly, the second transfer register (1) and the second transfer register (2) each have half the number of transfer stages of the second transfer register, and transfer deterioration in the second transfer register is caused by the decrease in the number of transfer stages. Can be suppressed.

  In the CCD type solid-state imaging device (area sensor) to which the present invention is applied, a horizontal transfer clock (FIG. 6) having a frequency half that of a conventional horizontal transfer clock (horizontal transfer clocks indicated by symbols Hφ1 and Hφ2 in FIG. Since it can be driven by the transfer clocks indicated by the middle signs Hφ1 and Hφ2, the horizontal transfer deterioration can be suppressed, and the high-speed driving required in recent years can be sufficiently handled. Furthermore, it is possible to reduce the power consumption of the horizontal transfer unit.

  Similarly, in a CCD type solid-state imaging device (linear sensor) to which the present invention is applied, a transfer clock (in FIG. 2) whose frequency is half that of a conventional transfer clock (transfer clocks indicated by symbols Hφ1 and Hφ2 in FIG. 6). Since the first transfer register and the second transfer register can be driven by the transfer clocks indicated by the symbols Hφ1 and Hφ2, the transfer deterioration can be suppressed and the high-speed driving required in recent years can be sufficiently handled. It becomes possible to do. Furthermore, power consumption of the first transfer register and the second transfer register can be reduced.

It is a schematic diagram for demonstrating the CCD type solid-state imaging device (area sensor) which is an example of the solid-state imaging device to which this invention is applied. FIG. 2 shows the drive timing of each pulse applied to the CCD solid-state imaging device (area sensor) shown in FIG. 1 and the output waveform from the CCD solid-state imaging device (area sensor) shown in FIG. It is a schematic diagram for demonstrating the CCD type solid-state imaging device (linear sensor) which is another example of the solid-state imaging device to which this invention is applied. It is a schematic diagram for demonstrating the conventional CCD type solid-state imaging device (area sensor). It is a potential schematic diagram from a horizontal transfer part to an FD part of a CCD type solid-state imaging device (area sensor). It is a schematic diagram which shows the timing of each pulse. It is a schematic diagram for demonstrating the conventional CCD type solid-state imaging device (linear sensor). It is a schematic diagram for demonstrating the conventional CCD type solid-state image sensor which has two output parts.

Explanation of symbols

1 CCD type solid-state imaging device (area sensor)
DESCRIPTION OF SYMBOLS 3 Timing signal generation circuit 4a Image pick-up part 4b Optical black area | region 5 Horizontal transfer part 5a 1st horizontal transfer part 5b 2nd horizontal transfer part 5c Channel stop area | region 7 Output part 8 Light-receiving part 9 Vertical transfer part 11 CCD type solid-state imaging device (Linear sensor)
12 First CCD linear sensor 13 Photoelectric conversion unit 14 First sensor array 15 First read gate 16 First transfer register 16a First transfer register (1)
16b First transfer register (2)
16c channel stop region 17 first overflow control barrier 18 overflow drain 19 first output unit 20 charge voltage conversion unit 22 second CCD linear sensor 23 second sensor array 24 second read gate 25 second transfer register 25a Second transfer register (1)
25b Second transfer register (2)
25c Channel stop region 26 Second overflow control barrier 28 Second output unit 29 Second charge voltage conversion unit

Claims (10)

A charge transfer unit that transfers charges photoelectrically converted in the imaging region;
In a charge transfer device comprising a charge detection unit for detecting the charge transferred by the charge transfer unit,
The charge transfer unit has a first charge transfer unit and a second charge transfer unit separated by a channel stop region, and the first charge transfer unit and the second charge transfer unit have substantially the same length. As well as
The charge transfer device, wherein the charge detection unit is disposed at a substantially central portion of the charge transfer unit. An imaging region in which a plurality of light receiving units are arranged; and
A charge transfer unit that transfers charges photoelectrically converted in the imaging region;
In a solid-state imaging device including a charge detection unit that detects charges transferred by the charge transfer unit,
The charge transfer unit has a first charge transfer unit and a second charge transfer unit separated by a channel stop region, and the first charge transfer unit and the second charge transfer unit have substantially the same length. As well as
The solid-state imaging device, wherein the charge detection unit is disposed at a substantially central portion of the charge transfer unit. The first charge transfer unit and the second charge transfer unit are applied with a first electrode to which a first transfer clock is applied and a second transfer clock obtained by inverting the first transfer clock. And the second electrodes are alternately arranged,
The first charge transfer unit includes the first electrode disposed in a final stage, and the second charge transfer unit includes the second electrode disposed in a final stage. The solid-state imaging device described. The transfer clock having one rise timing or one fall timing is applied to the first electrode after discharging the charge accumulated in the charge detection unit. The solid-state imaging device described. A light receiving section arranged in a matrix;
A vertical transfer unit that is provided for each vertical column of the light receiving unit and charges are transferred from the light receiving unit, and the transferred charges are transferred in a vertical direction;
A horizontal transfer unit that transfers charges from the vertical transfer unit and transfers the transferred charges in the horizontal direction;
In an area sensor including a charge detection unit that detects charges transferred from the horizontal transfer unit,
The horizontal transfer unit includes a first horizontal transfer unit and a second horizontal transfer unit separated by a channel stop region, and the first horizontal transfer unit and the second horizontal transfer unit have substantially the same length. As well as
The area sensor according to claim 1, wherein the charge detection unit is disposed at a substantially central portion of the horizontal transfer unit. The first horizontal transfer unit and the second horizontal transfer unit are applied with a first electrode to which a first transfer clock is applied and a second transfer clock obtained by inverting the first transfer clock. And the second electrodes are alternately arranged,
The said 1st electrode is arrange | positioned in the last stage in the said 1st horizontal transfer part, and the said 2nd electrode is arrange | positioned in the last stage in the said 2nd horizontal transfer part. The described area sensor. 6. The transfer clock having one rise timing or one fall timing is applied to the first electrode after discharging the charge accumulated in the charge detection unit. The described area sensor. A sensor array in which the light receiving portions are linearly arranged;
A charge transfer unit that transfers charges from the sensor array and reads the transferred charges;
In a linear sensor comprising a charge detection unit that detects charges transferred from the charge transfer unit,
The charge transfer unit includes a first charge transfer unit and a second transfer unit separated by a channel stop region, and the first charge transfer unit and the second charge transfer unit have substantially the same length. With
The linear sensor according to claim 1, wherein the charge detection unit is disposed at a substantially central portion of the charge transfer unit. The first charge transfer unit and the second charge transfer unit are applied with a first electrode to which a first transfer clock is applied and a second transfer clock obtained by inverting the second transfer clock. And the second electrodes are alternately arranged,
The first charge transfer unit includes the first electrode disposed in a final stage, and the second charge transfer unit includes the second electrode disposed in a final stage. The linear sensor described. The transfer clock having one rising timing or one falling timing after discharging the charge accumulated in the charge detection unit is applied to the first electrode. The linear sensor described.

Images