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JP2008187561A - Surface acoustic wave element - Google Patents

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JP2008187561A
JP2008187561A JP2007020447A JP2007020447A JP2008187561A JP 2008187561 A JP2008187561 A JP 2008187561A JP 2007020447 A JP2007020447 A JP 2007020447A JP 2007020447 A JP2007020447 A JP 2007020447A JP 2008187561 A JP2008187561 A JP 2008187561A
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surface acoustic
acoustic wave
comb
wiring pattern
piezoelectric substrate
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Hideki Kondo
秀樹 近藤
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Alps Alpine Co Ltd
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Alps Electric Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface acoustic wave element which can be directly bumped on a wiring pattern. <P>SOLUTION: The surface acoustic wave element has a piezoelectric substrate (4), interdigital electrodes (6, 16) which have a function to convert between surface acoustic waves that occur on the piezoelectric substrate and electric signals, wiring patterns (8, 18) that are formed by extending the interdigital electrodes on the surface of the piezoelectric substrate, and solder balls (10, 20) which are directly provided on the wiring patterns and connected to electrodes of a package board. The interdigital electrode and the wiring pattern are mainly composed of a copper and silver alloy, and the solder ball includes tin and silver, or tin and zinc. <P>COPYRIGHT: (C)2008,JPO&amp;INPIT

Description

本発明は、表面弾性波デバイスに用いられる表面弾性波素子に関するものである。   The present invention relates to a surface acoustic wave element used for a surface acoustic wave device.

近年、携帯電話装置やテレビジョン受像器等の電子機器や通信装置には、共振子や帯域フィルタ等として表面弾性波デバイス(SAW(Surface Acoustic Wave)デバイス)が採用されている。
この種のデバイスは表面弾性波素子を気密封止して構成されており、この素子には圧電基板の表面上に櫛歯電極(IDT:Interdigital Transducer)、配線パターン及び配線パッド等が形成されている(例えば、特許文献1,2参照)。
2. Description of the Related Art In recent years, surface acoustic wave devices (SAW (Surface Acoustic Wave) devices) have been adopted as electronic devices and communication devices such as mobile phone devices and television receivers as resonators and band filters.
This type of device is configured by hermetically sealing a surface acoustic wave element, and this element has a comb electrode (IDT: Interdigital Transducer), a wiring pattern, a wiring pad, and the like formed on the surface of the piezoelectric substrate. (For example, see Patent Documents 1 and 2).

詳しくは、図4に示されるように、圧電基板40の上には櫛歯電極60,160及び配線パターン80,180の層が形成され、この層はアルミニウム(Al)を主成分として構成されている。次いで、この層の上には配線パッド90がスパッタリング等にて形成され、さらに、この各パッド上にバンプ(例えば半田ボール)100が突起電極として形成されている。そして、パッドが金(Au)等を主成分として構成されると、Alを主成分とする櫛歯電極及び配線パターンがバンプから保護される。
また、配線パッドもAlを主成分として構成されている場合には、図5に示される如く、バンプ(例えば金バンプ)200の下側に位置するパッド90の下方にはUBM(Under Bump Metal)92が備えられ、櫛歯電極、配線パターン及び配線パッドが保護される。
Specifically, as shown in FIG. 4, layers of comb-tooth electrodes 60 and 160 and wiring patterns 80 and 180 are formed on the piezoelectric substrate 40, and this layer is composed mainly of aluminum (Al). Yes. Next, wiring pads 90 are formed on this layer by sputtering or the like, and bumps (for example, solder balls) 100 are formed on the pads as protruding electrodes. When the pad is composed mainly of gold (Au) or the like, the comb electrode and the wiring pattern whose main component is Al are protected from the bumps.
When the wiring pad is also composed mainly of Al, as shown in FIG. 5, a UBM (Under Bump Metal) is provided below the pad 90 located below the bump (eg, gold bump) 200. 92 is provided to protect the comb electrode, the wiring pattern and the wiring pad.

特開2000−299355号公報JP 2000-299355 A 特開2002−343827号公報JP 2002-343827 A

しかしながら、櫛歯電極及び配線パターンの層がAlを主成分として構成されている場合には配線パッドが少なくとも必要になり、これでは表面弾性波素子の製造期間が長くなり、製造コストの低廉化が困難になるとの問題がある。そこで、配線パッドを省略するための措置が必要になるが、従来の技術ではこの点については格別な配慮がなされていない。   However, when the comb electrode and the wiring pattern layer are mainly composed of Al, at least a wiring pad is required, which increases the manufacturing period of the surface acoustic wave device and reduces the manufacturing cost. There is a problem that becomes difficult. Therefore, measures for omitting the wiring pads are necessary, but no special consideration is given to this point in the prior art.

そこで、本発明の目的は、上記課題を解消し、配線パターンの上に直接にバンプを設けることができる表面弾性波素子を提供することである。   SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a surface acoustic wave device capable of solving the above-described problems and providing bumps directly on a wiring pattern.

上記目的を達成するための第1の発明は、圧電基板と、圧電基板の表面上に形成され、圧電基板に生じる表面弾性波と電気信号とを相互に変換する機能を有した櫛歯電極と、圧電基板の表面上に櫛歯電極を延長して形成された配線パターンと、配線パターンの上に直接に設けられ、パッケージ基板の電極に接続される半田ボールとを備え、櫛歯電極及び配線パターンは、銅銀合金を主成分として構成され、半田ボールは、錫と銀とを含んで構成されている。   A first invention for achieving the above object includes a piezoelectric substrate, a comb electrode formed on the surface of the piezoelectric substrate, and having a function of mutually converting a surface acoustic wave and an electric signal generated on the piezoelectric substrate; A wiring pattern formed by extending a comb-tooth electrode on the surface of the piezoelectric substrate and a solder ball provided directly on the wiring pattern and connected to the electrode of the package substrate. The pattern is composed mainly of a copper-silver alloy, and the solder ball is composed of tin and silver.

第1の発明によれば、櫛歯電極と配線パターンとは銅銀合金を主成分とした同一成分で構成され、この銅銀合金は半田との相性が良く、また、櫛歯電極及び配線パターンの層がAlを主成分として構成された場合に比して保護しなくて良い。よって、従来の如く半田ボールと配線パターンとの間に配線パッドやUBMが全く不要になり、表面弾性波素子の製造コストの低廉化が達成可能となる。   According to the first invention, the comb electrode and the wiring pattern are composed of the same component mainly composed of a copper silver alloy, and the copper silver alloy has good compatibility with the solder, and the comb electrode and the wiring pattern. This layer need not be protected as compared with the case where the layer is composed mainly of Al. As a result, wiring pads and UBMs are completely unnecessary between the solder balls and the wiring pattern as in the prior art, and the manufacturing cost of the surface acoustic wave device can be reduced.

第2の発明は、第1の発明の構成において、半田ボールは、銅をさらに含み、銅が0.45質量%から0.85質量%とし、銀が2.8質量%から3.2質量%とし、錫が残率で構成されていることを特徴とする。
第2の発明によれば、第1の発明の作用に加えてさらに、半田ボールが錫、銀及び銅から構成され、銅銀合金を主成分とした櫛歯電極や配線パターンとの相性が非常に良いので、これら配線パターンと半田ボールとの接合強度が向上する。
According to a second aspect of the present invention, in the configuration of the first aspect, the solder ball further includes copper, the copper content is 0.45 mass% to 0.85 mass%, and the silver content is 2.8 mass% to 3.2 mass%. %, And tin is composed of a residual rate.
According to the second invention, in addition to the action of the first invention, the solder ball is composed of tin, silver and copper, and is very compatible with the comb electrode and wiring pattern mainly composed of a copper-silver alloy. Therefore, the bonding strength between the wiring pattern and the solder ball is improved.

第3の発明は、第1の発明と同様に、圧電基板と、櫛歯電極と、配線パターンと、半田ボールとを備えた構成において、櫛歯電極及び配線パターンは、銅銀合金を主成分として構成され、半田ボールは、錫と亜鉛とを含んで構成されている。
第3の発明によっても、櫛歯電極と配線パターンとは銅銀合金を主成分とした同一成分で構成され、この銅銀合金は半田との相性が良く、また、櫛歯電極及び配線パターンの層がAlを主成分として構成された場合に比して保護しなくて良い。よって、従来の如く半田ボールと配線パターンとの間に配線パッドやUBMが全く不要になり、表面弾性波素子の製造コストの低廉化が達成可能となる。
しかも、当該半田を用いれば融点を下げることができるので、櫛歯電極や配線パターンの保護も図られる。
As in the first invention, the third invention comprises a piezoelectric substrate, comb electrodes, wiring patterns, and solder balls, wherein the comb electrodes and wiring patterns are mainly composed of a copper-silver alloy. The solder ball is configured to contain tin and zinc.
Also according to the third invention, the comb electrode and the wiring pattern are composed of the same component mainly composed of a copper silver alloy, and this copper silver alloy has a good compatibility with the solder. It is not necessary to protect the layer as compared with the case where the layer is composed mainly of Al. As a result, wiring pads and UBMs are completely unnecessary between the solder balls and the wiring patterns as in the prior art, and the manufacturing cost of the surface acoustic wave device can be reduced.
In addition, since the melting point can be lowered by using the solder, the comb electrodes and the wiring pattern can be protected.

第4の発明は、第3の発明の構成において、半田ボールは、ビスマスをさらに含み、ビスマスが2.5質量%から3.5質量%とし、亜鉛が7.5質量%から8.5質量%とし、錫が残率で構成されていることを特徴とする。
第4の発明によれば、第1の発明の作用に加えてさらに、半田ボールが錫、亜鉛及びビスマスから構成されており、融点がより一層低くなる。これにより、パッケージ基板の電極に接合される際に、配線パターンに対する熱膨張に起因するストレス(歪み)が小さくて済むので、これら配線パターンと半田ボールとの接合強度がより一層確実に維持される。
According to a fourth invention, in the configuration of the third invention, the solder ball further includes bismuth, wherein the bismuth is 2.5 mass% to 3.5 mass%, and the zinc is 7.5 mass% to 8.5 mass%. %, And tin is composed of a residual rate.
According to the fourth invention, in addition to the action of the first invention, the solder ball is made of tin, zinc and bismuth, and the melting point is further lowered. Thereby, when bonding to the electrode of the package substrate, stress (distortion) due to thermal expansion to the wiring pattern can be reduced, so that the bonding strength between the wiring pattern and the solder ball is more reliably maintained. .

第5の発明は、第1から第4の発明の表面弾性波素子において、送信機のフィルタに用いられることを特徴とする。
第5の発明によれば、第1の発明の作用に加えてさらに、送信機のフィルタに用いられる表面弾性波素子には大電力が流れ、熱が発生し得るが、櫛歯電極や配線パターンが銅銀合金を主成分として構成されていることから、耐電力性に優れ、好適である。
According to a fifth aspect of the present invention, in the surface acoustic wave device according to the first to fourth aspects of the present invention, the surface acoustic wave element is used for a filter of a transmitter.
According to the fifth invention, in addition to the action of the first invention, the surface acoustic wave device used for the filter of the transmitter can generate a large amount of power and generate heat. Is composed of a copper-silver alloy as a main component, and is therefore excellent in power durability and suitable.

本発明によれば、素子の製造コストの低廉化が達成可能となる表面弾性波素子を提供することができる。   ADVANTAGE OF THE INVENTION According to this invention, the surface acoustic wave element which can achieve reduction in the manufacturing cost of an element can be provided.

以下、本発明の好適な実施の形態を図面に基づいて説明する。
図1及び図2は本実施例の表面弾性波素子2を示している。この素子2は後述するSAWデバイスに内蔵される素子である。
当該素子2は圧電基板4を有しており、この基板4は、例えばLT(タンタル酸リチウム:LiTaO)又はLN(ニオブ酸リチウム:LiNbO)で構成されている。
DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described with reference to the drawings.
1 and 2 show a surface acoustic wave device 2 of the present embodiment. This element 2 is an element built in a SAW device described later.
The element 2 includes a piezoelectric substrate 4, and the substrate 4 is made of, for example, LT (lithium tantalate: LiTaO 3 ) or LN (lithium niobate: LiNbO 3 ).

基板4の表面上には櫛歯電極6,16及び配線パターン8,18の層が形成されている。櫛歯電極6,16は銅銀合金(Cu合金)を主成分として構成され、櫛歯電極6は、基部6bと、この基部6bから基板4の表面に沿って櫛歯状に延びる各櫛歯部6aとを有している。また、櫛歯電極16は、櫛歯電極6とほぼ同様の構成であり、基部16bと、この基部16bから基板4の表面に沿って櫛歯状に延びる各櫛歯部16aとを有しており、これら櫛歯部6aと櫛歯部16aとは、一定の間隔を持って交互に配列されている。   On the surface of the substrate 4, layers of comb electrodes 6 and 16 and wiring patterns 8 and 18 are formed. The comb electrodes 6 and 16 are mainly composed of a copper-silver alloy (Cu alloy). The comb electrode 6 includes a base portion 6 b and comb teeth extending from the base portion 6 b along the surface of the substrate 4 in a comb shape. Part 6a. The comb electrode 16 has substantially the same configuration as the comb electrode 6, and includes a base portion 16 b and each comb tooth portion 16 a extending from the base portion 16 b along the surface of the substrate 4 in a comb shape. The comb teeth 6a and the comb teeth 16a are alternately arranged with a constant interval.

そして、これら櫛歯電極6,16では電歪効果を用い、機械量と電気量との変換が行われる。
一方、配線パターン8,18は、基板4の表面上に形成され、導電性を有するいわゆる外周パターンと称される配線であり、櫛歯電極6,16の各基部6b,16bをそれぞれ延長して形成され、櫛歯電極6,16と同様に、銅銀合金(Cu合金)を主成分として構成されている。
なお、これら櫛歯電極6,16及び配線パターン8,18の層を構成するCu合金は、銅(Cu)中に少量の銀(Ag)や錫(Sn)等を含有して構成されており、例えば、約2.6wt%から約3.0wt%のAgやSn等が添加される。
These comb-tooth electrodes 6 and 16 use the electrostrictive effect to convert between mechanical quantities and electric quantities.
On the other hand, the wiring patterns 8 and 18 are wirings that are formed on the surface of the substrate 4 and are referred to as conductive so-called outer peripheral patterns, and extend the base portions 6b and 16b of the comb electrodes 6 and 16, respectively. Like the comb electrodes 6 and 16, the copper silver alloy (Cu alloy) is used as a main component.
In addition, Cu alloy which comprises the layer of these comb-tooth electrodes 6 and 16 and the wiring patterns 8 and 18 contains a small amount of silver (Ag), tin (Sn), etc. in copper (Cu). For example, about 2.6 wt% to about 3.0 wt% of Ag, Sn, or the like is added.

また、このパターン8,18の上には半田ボール10,10が上述した配線パッドを形成させずに直接に設けられている。この各ボール10はSnとAgとを含んで構成される鉛フリー半田で構成される。
より具体的には、本実施例のボール10は、Sn及びAgの他、Cuをさらに含んでおり、以下の組成式で示される。
Also, solder balls 10 and 10 are provided directly on the patterns 8 and 18 without forming the above-described wiring pads. Each ball 10 is composed of lead-free solder composed of Sn and Ag.
More specifically, the ball 10 of this example further includes Cu in addition to Sn and Ag, and is represented by the following composition formula.

aSn−bAg−cCu
ここで、a:残率、2.8wt%<b<3.2wt%、0.45wt%<c<0.85wt%である。
aSn-bAg-cCu
Here, a: residual ratio, 2.8 wt% <b <3.2 wt%, 0.45 wt% <c <0.85 wt%.

なぜならば、Agが2.8wt%を下回ると、配線パターン8,18と半田ボール10との接合強度が維持困難になる一方、Agが3.2wt%を上回ると、高価になるし、また、引け巣、つまり、ボール10が後述するパッケージ基板の電極に接合された直後に、ボール10のフィレット表面に細長いクラックの如くの巣が生じ易くなるからである。   This is because, if Ag is less than 2.8 wt%, it is difficult to maintain the bonding strength between the wiring patterns 8 and 18 and the solder ball 10, while if Ag is more than 3.2 wt%, it becomes expensive. This is because a shrinkage nest, that is, a nest such as an elongated crack is likely to occur on the fillet surface of the ball 10 immediately after the ball 10 is bonded to an electrode of a package substrate described later.

また、Cuが0.45wt%を下回ると、融点が下がり難くなるのに対し、Cuが0.85wt%を上回ると、銅食われ、つまり、櫛歯電極6,16や配線パターン8,18の銅成分がボール10に溶け出し易くなり、上記接合強度が維持困難になるからである。
これらSn、Ag及びCuの最適な値(a:b:c)は96.5:3:0.5であり、このボール10の融点は大気中で217℃から219℃の範囲になる。
Further, when Cu is less than 0.45 wt%, the melting point is hardly lowered, whereas when Cu exceeds 0.85 wt%, copper is eroded, that is, the comb electrodes 6, 16 and the wiring patterns 8, 18. This is because the copper component is easily dissolved into the ball 10 and it becomes difficult to maintain the bonding strength.
The optimum values (a: b: c) of these Sn, Ag and Cu are 96.5: 3: 0.5, and the melting point of the ball 10 is in the range of 217 ° C. to 219 ° C. in the atmosphere.

ところで、一対の反射器22は、表面弾性波の伝搬方向に対して略垂直方向に細長く延びた複数の電極を配列して構成され、表面弾性波の伝搬方向でみて櫛歯電極6,16の両側に隣接配置されている。なお、この伝搬方向とは、表面弾性波が基板4の表面を伝搬する主要な方向を意味する。
ここで、上述した半田ボール10は後述するパッケージ基板の電極に接続されており、この電極からは櫛歯電極6,16のいずれかに高周波信号が入力される。
By the way, the pair of reflectors 22 are configured by arranging a plurality of elongated electrodes extending in a direction substantially perpendicular to the propagation direction of the surface acoustic wave, and the comb-like electrodes 6 and 16 are viewed in the propagation direction of the surface acoustic wave. Adjacent to each other. The propagation direction means a main direction in which the surface acoustic wave propagates on the surface of the substrate 4.
Here, the above-described solder ball 10 is connected to an electrode of a package substrate, which will be described later, and a high-frequency signal is input to one of the comb electrodes 6 and 16 from this electrode.

詳しくは、高周波信号が例えば配線パターン18を経由して櫛歯電極16に供給されると、櫛歯部16aは、この高周波信号による電界によって逆圧電効果を生じさせ、基板4の表面に変位を生じさせる。次いで、この基板4上には表面弾性波が生じ、主として上記伝搬方向に沿って伝搬する。なお、一対の反射器22は、伝搬する表面弾性波を反射し、表面弾性波のエネルギーが外部に逃げるのを防止する。   Specifically, when a high-frequency signal is supplied to the comb-teeth electrode 16 via, for example, the wiring pattern 18, the comb-teeth portion 16 a causes an inverse piezoelectric effect due to the electric field generated by the high-frequency signal and displaces the surface of the substrate 4. Cause it to occur. Next, surface acoustic waves are generated on the substrate 4 and propagate mainly along the propagation direction. The pair of reflectors 22 reflects the propagating surface acoustic waves and prevents the energy of the surface acoustic waves from escaping to the outside.

続いて、表面弾性波は櫛歯部16aと対をなす櫛歯部6aに伝達され、この櫛歯部6aは、伝達された表面弾性波による基板4の表面の変位に基づく圧電効果によって、その変位に応じた特定帯域の周波数信号を検出する。この周波数信号は基部6bを経由して配線パターン8から取り出される。   Subsequently, the surface acoustic wave is transmitted to the comb tooth portion 6a paired with the comb tooth portion 16a, and the comb tooth portion 6a is subjected to the piezoelectric effect based on the displacement of the surface of the substrate 4 by the transmitted surface acoustic wave. A frequency signal in a specific band corresponding to the displacement is detected. This frequency signal is extracted from the wiring pattern 8 via the base 6b.

上記の如く構成された表面弾性波素子2は、まず、基板4上に数十〜数百nmのCu合金膜が成膜される。なお、この成膜工程では、薄いCr膜を形成した後、当該Cu合金膜を形成させ、その後、TiN膜やCr膜を形成させても良い。次いで、Cu合金膜をエッチングし、櫛歯電極6,16、配線パターン8,18及び反射器22が形成される。そして、半田ボール10が基板4の配線パターン8,18上の適宜位置に形成され、上述した素子2となる。   In the surface acoustic wave device 2 configured as described above, first, a Cu alloy film of several tens to several hundreds of nanometers is formed on the substrate 4. In this film forming process, after forming a thin Cr film, the Cu alloy film may be formed, and then a TiN film or a Cr film may be formed. Next, the Cu alloy film is etched, and the comb-tooth electrodes 6 and 16, the wiring patterns 8 and 18, and the reflector 22 are formed. Then, solder balls 10 are formed at appropriate positions on the wiring patterns 8 and 18 of the substrate 4 to form the element 2 described above.

その後、図3に示されるように、この素子2は裏返され、半田ボール10とパッケージ基板32の電極34とがそれぞれ重ね合わされて接合される。詳しくは、ボール10を電極34に押し当てながら超音波が照射されることにより、ボール10が電極34に接合され、チップ実装が行われる。
そして、パッケージ基板32に金属製のリッド36を重ね合わせ、これら基板32とリッド36とをロウ付けにて素子2を気密封止すると、SAWデバイス1となる。これにより、櫛歯電極6,16や配線パターン8,18がCu合金を主成分して構成されていても、従来と同様の耐蝕性が得られる。なお、この金属封止の他、樹脂封止であっても良い。
Thereafter, as shown in FIG. 3, the element 2 is turned over, and the solder ball 10 and the electrode 34 of the package substrate 32 are overlapped and joined. Specifically, by irradiating ultrasonic waves while pressing the ball 10 against the electrode 34, the ball 10 is bonded to the electrode 34 and chip mounting is performed.
Then, the metal lid 36 is overlaid on the package substrate 32, and the element 2 is hermetically sealed by brazing the substrate 32 and the lid 36, whereby the SAW device 1 is obtained. Thereby, even if the comb-tooth electrodes 6 and 16 and the wiring patterns 8 and 18 are mainly composed of a Cu alloy, the same corrosion resistance as in the prior art can be obtained. In addition to this metal sealing, resin sealing may be used.

このように、表面弾性波素子2は気密封止によってSAWデバイス1となり、本実施例のデバイス1は送信機のフィルタに用いられている。
ところで、上述した半田ボール10は錫(Sn)と亜鉛(Zn)とを含んで構成される鉛フリー半田で構成されていても良い。
より詳しくは、当該実施例のボール10は、Sn及びZnの他、ビスマス(Bi)をさらに含んでおり、以下の組成式で示される。
Thus, the surface acoustic wave element 2 becomes the SAW device 1 by hermetic sealing, and the device 1 of this embodiment is used for a filter of a transmitter.
By the way, the solder ball 10 described above may be composed of lead-free solder composed of tin (Sn) and zinc (Zn).
More specifically, the ball 10 of this example further includes bismuth (Bi) in addition to Sn and Zn, and is represented by the following composition formula.

aSn−bZn−cBi
ここで、a:残率、7.5wt%<b<8.5wt%、2.5wt%<c<3.5wt%である。
aSn-bZn-cBi
Here, a: residual rate, 7.5 wt% <b <8.5 wt%, 2.5 wt% <c <3.5 wt%.

なぜならば、Znが7.5wt%を下回ると、融点が下がり難くなる一方、Znが8.5wt%を上回ると、劣化し易くなって上記接合強度が維持困難になるし、半田の広がり等を示す濡れ性が低下してその表面で球状になり、腐食の原因になるからである。
また、Biが2.5wt%を下回ると、融点が下がり難くなるし、濡れ性が低下するのに対し、Biが3.5wt%を上回ると、半田の凝固時に接合界面に偏りや不均一な層が形成される偏析が生じ易くなって上記接合強度が維持困難になるからである。
This is because when Zn is less than 7.5 wt%, the melting point is difficult to decrease, whereas when Zn is more than 8.5 wt%, it is easy to deteriorate and the above-mentioned bonding strength is difficult to maintain, and the spread of solder, etc. This is because the wettability shown decreases and becomes spherical on the surface, causing corrosion.
Also, if Bi is less than 2.5 wt%, the melting point is difficult to decrease and wettability is reduced. On the other hand, if Bi exceeds 3.5 wt%, the bonding interface is biased or non-uniform during solidification of the solder. This is because segregation in which a layer is formed easily occurs and the above-described bonding strength is difficult to maintain.

これらSn、Zn及びBiの最適な値(a:b:c)は89:8:3であり、このボール10の融点は窒素雰囲気中で189℃から199℃の範囲に抑えられる。また、窒素雰囲気中で実施すれば、Znが酸化せず、亜鉛酸化層が形成されなくなって接合強度の低下が抑えられる。   The optimum values (a: b: c) of these Sn, Zn and Bi are 89: 8: 3, and the melting point of the ball 10 is suppressed to a range of 189 ° C. to 199 ° C. in a nitrogen atmosphere. Moreover, if it implements in nitrogen atmosphere, Zn will not oxidize, a zinc oxide layer will not be formed, and the fall of joint strength will be suppressed.

以上のように、本発明は、Cu合金で構成された層に直接に半田を形成してチップ実装する点に着目したものである。   As described above, the present invention pays attention to the point that the solder is directly formed on the layer made of the Cu alloy and the chip is mounted.

そして、各実施例によれば、櫛歯電極6,16と配線パターン8,18とはCu合金を主成分とした同一成分で構成され、このCu合金は半田ボール10との相性が良く、また、櫛歯電極及び配線パターンの層がAlを主成分として構成された場合に比して保護しなくて良い。よって、従来の如く半田ボールと配線パターンとの間に配線パッドやUBMが全く不要になり、表面弾性波素子2の製造期間が短縮されて製造コストの低廉化が達成可能となるし、デバイス1に対して気密封止すれば、素子2の信頼性も確保可能となる。   And according to each Example, the comb-tooth electrodes 6 and 16 and the wiring patterns 8 and 18 are comprised by the same component which has Cu alloy as a main component, and this Cu alloy has good compatibility with the solder ball 10, and As compared with the case where the comb electrode layer and the wiring pattern layer are mainly composed of Al, it is not necessary to protect. Therefore, unlike the prior art, no wiring pad or UBM is required between the solder ball and the wiring pattern, the manufacturing period of the surface acoustic wave element 2 is shortened, and the manufacturing cost can be reduced. However, if the device 2 is hermetically sealed, the reliability of the element 2 can be secured.

また、ボール10がSn、Ag及びCu、或いは、Sn、Zn及びBiから構成され、Cu合金を主成分とした櫛歯電極6,16や配線パターン8,18との相性が良いので、これら配線パターン8,18とボール10との接合強度が向上する。   Further, since the ball 10 is made of Sn, Ag and Cu, or Sn, Zn and Bi and has good compatibility with the comb electrodes 6 and 16 and the wiring patterns 8 and 18 mainly composed of a Cu alloy, these wirings are used. The bonding strength between the patterns 8 and 18 and the ball 10 is improved.

しかも、後者のSn、Zn及びBiで構成されたボール10を用いれば、Sn、Ag及びCuで構成されたボールよりも融点を下げることができるので、櫛歯電極6,16や配線パターン8,18の保護も図られるし、パッケージ基板32の電極34に接合される際に、配線パターン8,18に対する熱膨張に起因するストレス(歪み)が小さくて済むので、これら配線パターン8,18とボール10との接合強度がより一層確実に維持される。   Moreover, if the ball 10 composed of the latter Sn, Zn, and Bi is used, the melting point can be lowered as compared with the ball composed of Sn, Ag, and Cu, so that the comb electrodes 6, 16 and the wiring pattern 8, 18 is also protected, and stress (distortion) due to thermal expansion on the wiring patterns 8 and 18 can be reduced when bonded to the electrode 34 of the package substrate 32. The bonding strength with 10 is more reliably maintained.

さらに、送信機のフィルタに用いられる素子2には大電力が流れ、熱が発生し得るが、櫛歯電極6,16や配線パターン8,18がCu合金を主成分として構成されているので、Alを主成分として構成された場合に比して抵抗が小さくなって耐電力性に優れる。すなわち、高電圧がかかってもパターンに影響を及ぼさなくなり、好適である。
本発明は、上記実施の形態に限定されず、特許請求の範囲を逸脱しない範囲で種々の変更を行うことができる。
Furthermore, although large electric power flows through the element 2 used for the filter of the transmitter and heat can be generated, since the comb electrodes 6 and 16 and the wiring patterns 8 and 18 are mainly composed of a Cu alloy, Compared with the case where Al is the main component, the resistance is reduced and the power durability is excellent. That is, even if a high voltage is applied, the pattern is not affected, which is preferable.
The present invention is not limited to the above embodiment, and various modifications can be made without departing from the scope of the claims.

例えば、上記実施例では表面弾性波素子として送信機のフィルタに具現化した例を示しているが、本発明の表面弾性波素子は携帯電話装置やテレビジョン受像器などの電子機器や通信装置において、共振子や帯域フィルタにも当然に適用可能である。   For example, in the above embodiment, the surface acoustic wave element is embodied in a filter of a transmitter. However, the surface acoustic wave element of the present invention is used in electronic devices and communication devices such as a mobile phone device and a television receiver. Of course, the present invention can also be applied to resonators and bandpass filters.

本実施例に係る表面弾性波素子の平面図である。It is a top view of the surface acoustic wave element concerning a present Example. 図1のII−II線矢視断面図である。It is the II-II sectional view taken on the line of FIG. 図1の表面弾性波素子を用いたSAWデバイスの断面図である。It is sectional drawing of the SAW device using the surface acoustic wave element of FIG. 従来における表面弾性波素子の断面図である。It is sectional drawing of the conventional surface acoustic wave element. 従来における他の表面弾性波素子の断面図である。It is sectional drawing of the other conventional surface acoustic wave element.

符号の説明Explanation of symbols

1 SAWデバイス
2 表面弾性波素子
4 圧電基板
6 櫛歯電極
8 配線パターン
10 半田ボール
16 櫛歯電極
18 配線パターン
20 半田ボール
32 パッケージ基板
34 電極
DESCRIPTION OF SYMBOLS 1 SAW device 2 Surface acoustic wave element 4 Piezoelectric substrate 6 Comb electrode 8 Wiring pattern 10 Solder ball 16 Comb electrode 18 Wiring pattern 20 Solder ball 32 Package substrate 34 Electrode

Claims (5)

圧電基板と、
前記圧電基板の表面上に形成され、前記圧電基板に生じる表面弾性波と電気信号とを相互に変換する機能を有した櫛歯電極と、
前記圧電基板の表面上に前記櫛歯電極を延長して形成された配線パターンと、
前記配線パターンの上に直接に設けられ、パッケージ基板の電極に接続される半田ボールとを備え、
前記櫛歯電極及び前記配線パターンは、銅銀合金を主成分として構成され、
前記半田ボールは、錫と銀とを含んで構成されている
ことを特徴とする表面弾性波素子。
A piezoelectric substrate;
A comb-like electrode formed on the surface of the piezoelectric substrate and having a function of mutually converting a surface acoustic wave generated in the piezoelectric substrate and an electrical signal;
A wiring pattern formed by extending the comb electrodes on the surface of the piezoelectric substrate;
A solder ball provided directly on the wiring pattern and connected to an electrode of a package substrate;
The comb electrode and the wiring pattern are mainly composed of a copper-silver alloy,
The surface acoustic wave device, wherein the solder ball includes tin and silver.
請求項1に記載の表面弾性波素子において、
前記半田ボールは、銅をさらに含み、前記銅が0.45質量%から0.85質量%とし、前記銀が2.8質量%から3.2質量%とし、前記錫が残率で構成されていることを特徴とする表面弾性波素子。
The surface acoustic wave device according to claim 1,
The solder ball further includes copper, the copper is 0.45% by mass to 0.85% by mass, the silver is 2.8% by mass to 3.2% by mass, and the tin is constituted by a residual ratio. A surface acoustic wave device.
圧電基板と、
前記圧電基板の表面上に形成され、前記圧電基板に生じる表面弾性波と電気信号とを相互に変換する機能を有した櫛歯電極と、
前記圧電基板の表面上に前記櫛歯電極を延長して形成された配線パターンと、
前記配線パターンの上に直接に設けられ、パッケージ基板の電極に接続される半田ボールとを備え、
前記櫛歯電極及び前記配線パターンは、銅銀合金を主成分として構成され、
前記半田ボールは、錫と亜鉛とを含んで構成されている
ことを特徴とする表面弾性波素子。
A piezoelectric substrate;
A comb-like electrode formed on the surface of the piezoelectric substrate and having a function of mutually converting a surface acoustic wave generated in the piezoelectric substrate and an electrical signal;
A wiring pattern formed by extending the comb electrodes on the surface of the piezoelectric substrate;
A solder ball provided directly on the wiring pattern and connected to an electrode of a package substrate;
The comb electrode and the wiring pattern are mainly composed of a copper-silver alloy,
2. The surface acoustic wave device according to claim 1, wherein the solder ball includes tin and zinc.
請求項3に記載の表面弾性波素子において、
前記半田ボールは、ビスマスをさらに含み、前記ビスマスが2.5質量%から3.5質量%とし、前記亜鉛が7.5質量%から8.5質量%とし、前記錫が残率で構成されていることを特徴とする表面弾性波素子。
The surface acoustic wave device according to claim 3,
The solder ball further includes bismuth, the bismuth is 2.5 mass% to 3.5 mass%, the zinc is 7.5 mass% to 8.5 mass%, and the tin is constituted by a residual ratio. A surface acoustic wave device.
請求項1から4のいずれか一項に記載の表面弾性波素子において、
送信機のフィルタに用いられることを特徴とする表面弾性波素子。
In the surface acoustic wave device according to any one of claims 1 to 4,
A surface acoustic wave device used for a filter of a transmitter.
JP2007020447A 2007-01-31 2007-01-31 Surface acoustic wave element Pending JP2008187561A (en)

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