JP2008174392A - Method of manufacturing ceramic film - Google Patents
Method of manufacturing ceramic film Download PDFInfo
- Publication number
- JP2008174392A JP2008174392A JP2007006483A JP2007006483A JP2008174392A JP 2008174392 A JP2008174392 A JP 2008174392A JP 2007006483 A JP2007006483 A JP 2007006483A JP 2007006483 A JP2007006483 A JP 2007006483A JP 2008174392 A JP2008174392 A JP 2008174392A
- Authority
- JP
- Japan
- Prior art keywords
- film
- liquid composition
- coating liquid
- ceramic
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 238000000576 coating method Methods 0.000 claims abstract description 84
- 239000011248 coating agent Substances 0.000 claims abstract description 74
- 239000000203 mixture Substances 0.000 claims abstract description 69
- 239000007788 liquid Substances 0.000 claims abstract description 49
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 38
- 239000002245 particle Substances 0.000 claims abstract description 27
- 150000007524 organic acids Chemical class 0.000 claims abstract description 23
- 238000001035 drying Methods 0.000 claims abstract description 16
- 238000010304 firing Methods 0.000 claims abstract description 13
- 239000002612 dispersion medium Substances 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- -1 aliphatic organic acid salt Chemical class 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 18
- 150000002736 metal compounds Chemical class 0.000 claims description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 239000010419 fine particle Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 64
- 238000000034 method Methods 0.000 description 33
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 28
- 239000002904 solvent Substances 0.000 description 19
- 239000010936 titanium Substances 0.000 description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 14
- 229910052719 titanium Inorganic materials 0.000 description 14
- 238000001354 calcination Methods 0.000 description 10
- 239000006185 dispersion Substances 0.000 description 10
- 239000003960 organic solvent Substances 0.000 description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 9
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 6
- 239000008199 coating composition Substances 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 5
- 229910052788 barium Inorganic materials 0.000 description 5
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 5
- 229910052758 niobium Inorganic materials 0.000 description 5
- 239000010955 niobium Substances 0.000 description 5
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical group CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 4
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical group CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 4
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical group CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 4
- CETWDUZRCINIHU-UHFFFAOYSA-N 2-heptanol Chemical group CCCCCC(C)O CETWDUZRCINIHU-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 4
- 229910002115 bismuth titanate Inorganic materials 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical group CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 4
- QNVRIHYSUZMSGM-UHFFFAOYSA-N hexan-2-ol Chemical group CCCCC(C)O QNVRIHYSUZMSGM-UHFFFAOYSA-N 0.000 description 4
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- XAOGXQMKWQFZEM-UHFFFAOYSA-N isoamyl propanoate Chemical compound CCC(=O)OCCC(C)C XAOGXQMKWQFZEM-UHFFFAOYSA-N 0.000 description 4
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 4
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 4
- SJWFXCIHNDVPSH-UHFFFAOYSA-N octan-2-ol Chemical group CCCCCCC(C)O SJWFXCIHNDVPSH-UHFFFAOYSA-N 0.000 description 4
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910001868 water Inorganic materials 0.000 description 4
- DJSWDXUOSQTQCP-UHFFFAOYSA-N 2-ethylhexanoic acid;titanium Chemical class [Ti].CCCCC(CC)C(O)=O DJSWDXUOSQTQCP-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical group OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 3
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 3
- 239000005456 alcohol based solvent Substances 0.000 description 3
- 150000004703 alkoxides Chemical class 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- QQZOPKMRPOGIEB-UHFFFAOYSA-N n-butyl methyl ketone Chemical group CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 3
- DLWBHRIWCMOQKI-UHFFFAOYSA-L strontium;2-ethylhexanoate Chemical compound [Sr+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O DLWBHRIWCMOQKI-UHFFFAOYSA-L 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 3
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 description 2
- QEGNUYASOUJEHD-UHFFFAOYSA-N 1,1-dimethylcyclohexane Chemical compound CC1(C)CCCCC1 QEGNUYASOUJEHD-UHFFFAOYSA-N 0.000 description 2
- KVNYFPKFSJIPBJ-UHFFFAOYSA-N 1,2-diethylbenzene Chemical compound CCC1=CC=CC=C1CC KVNYFPKFSJIPBJ-UHFFFAOYSA-N 0.000 description 2
- XFFKAYOHINCUNU-UHFFFAOYSA-N 1-methylcycloheptan-1-ol Chemical group CC1(O)CCCCCC1 XFFKAYOHINCUNU-UHFFFAOYSA-N 0.000 description 2
- CAKWRXVKWGUISE-UHFFFAOYSA-N 1-methylcyclopentan-1-ol Chemical group CC1(O)CCCC1 CAKWRXVKWGUISE-UHFFFAOYSA-N 0.000 description 2
- HFZLSTDPRQSZCQ-UHFFFAOYSA-N 1-pyrrolidin-3-ylpyrrolidine Chemical compound C1CCCN1C1CNCC1 HFZLSTDPRQSZCQ-UHFFFAOYSA-N 0.000 description 2
- ULQISTXYYBZJSJ-UHFFFAOYSA-N 12-hydroxyoctadecanoic acid Chemical compound CCCCCCC(O)CCCCCCCCCCC(O)=O ULQISTXYYBZJSJ-UHFFFAOYSA-N 0.000 description 2
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 2
- QNVRIHYSUZMSGM-LURJTMIESA-N 2-Hexanol Chemical group CCCC[C@H](C)O QNVRIHYSUZMSGM-LURJTMIESA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- FZXRXKLUIMKDEL-UHFFFAOYSA-N 2-Methylpropyl propanoate Chemical compound CCC(=O)OCC(C)C FZXRXKLUIMKDEL-UHFFFAOYSA-N 0.000 description 2
- XPFCZYUVICHKDS-UHFFFAOYSA-N 3-methylbutane-1,3-diol Chemical compound CC(C)(O)CCO XPFCZYUVICHKDS-UHFFFAOYSA-N 0.000 description 2
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 description 2
- MQWCXKGKQLNYQG-UHFFFAOYSA-N 4-methylcyclohexan-1-ol Chemical group CC1CCC(O)CC1 MQWCXKGKQLNYQG-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- OHBRHBQMHLEELN-UHFFFAOYSA-N acetic acid;1-butoxybutane Chemical compound CC(O)=O.CCCCOCCCC OHBRHBQMHLEELN-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- VJFFDDQGMMQGTQ-UHFFFAOYSA-L barium(2+);2-ethylhexanoate Chemical compound [Ba+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O VJFFDDQGMMQGTQ-UHFFFAOYSA-L 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- QCRFMSUKWRQZEM-UHFFFAOYSA-N cycloheptanol Chemical group OC1CCCCCC1 QCRFMSUKWRQZEM-UHFFFAOYSA-N 0.000 description 2
- PFURGBBHAOXLIO-UHFFFAOYSA-N cyclohexane-1,2-diol Chemical compound OC1CCCCC1O PFURGBBHAOXLIO-UHFFFAOYSA-N 0.000 description 2
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical group OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- XCIXKGXIYUWCLL-UHFFFAOYSA-N cyclopentanol Chemical group OC1CCCC1 XCIXKGXIYUWCLL-UHFFFAOYSA-N 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- 239000003759 ester based solvent Substances 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- SHZIWNPUGXLXDT-UHFFFAOYSA-N ethyl hexanoate Chemical compound CCCCCC(=O)OCC SHZIWNPUGXLXDT-UHFFFAOYSA-N 0.000 description 2
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 2
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- KEMQGTRYUADPNZ-UHFFFAOYSA-N heptadecanoic acid Chemical compound CCCCCCCCCCCCCCCCC(O)=O KEMQGTRYUADPNZ-UHFFFAOYSA-N 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- PQLMXFQTAMDXIZ-UHFFFAOYSA-N isoamyl butyrate Chemical compound CCCC(=O)OCCC(C)C PQLMXFQTAMDXIZ-UHFFFAOYSA-N 0.000 description 2
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 2
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Landscapes
- Oxygen, Ozone, And Oxides In General (AREA)
- Chemically Coating (AREA)
Abstract
Description
本発明は、基体上にセラミックス薄膜を製造する製造方法に関し、詳しくは、プレカーサ組成物の湿式コーティングによる塗布及び焼成による平滑性及び電気的特性が改善されたセラミックス膜の製造方法に関する。 The present invention relates to a method for producing a ceramic thin film on a substrate, and more particularly to a method for producing a ceramic film having improved smoothness and electrical characteristics by applying and firing a precursor composition by wet coating.
導電体、超電導体、強誘電体、高誘電体、誘電体、圧電体、焦電体等の機能性セラミックス膜は、様々な用途への応用が検討されている。特に誘電特性の特徴を応用した高誘電体キャパシタ、強誘電体キャパシタ、ゲート絶縁膜、バリア膜、コンデンサ、圧電素子等の電子部品の電子部材に用いられている。 Functional ceramic films such as conductors, superconductors, ferroelectrics, high dielectrics, dielectrics, piezoelectrics, pyroelectrics, etc. are being studied for various applications. In particular, it is used for electronic members of electronic parts such as high-dielectric capacitors, ferroelectric capacitors, gate insulating films, barrier films, capacitors, piezoelectric elements and the like that apply the characteristics of dielectric characteristics.
上記の膜の製造法としては、MOD法、ゾル−ゲル法、セラミックス粒子の分散液を塗布後焼成する方法、CVD法、ALD法等が挙げられる。比較的加工精度の低い薄膜については、製造コストが小さく、膜形成が容易なゾル−ゲル法、MOD法、セラミックス粒子の分散液を塗布後焼成する方法等の湿式コーティング法が好適な方法であり、これらに用いられる膜の原料には、金属アルコキシド化合物、有機酸金属塩、セラミックス微粒子が使用されている。 Examples of the method for producing the film include a MOD method, a sol-gel method, a method in which a dispersion of ceramic particles is applied and then fired, a CVD method, an ALD method, and the like. For thin films with relatively low processing accuracy, wet coating methods such as the sol-gel method, MOD method, and the method of firing after applying a dispersion of ceramic particles are the preferred methods because of low production costs and easy film formation. As raw materials for the films used in these, metal alkoxide compounds, organic acid metal salts, and ceramic fine particles are used.
例えば、特許文献1には、有機金属ゾル−ゲル溶液と微粉セラミックを混合した分散液を用いてセラミックス薄膜の製造方法が開示されている。 For example, Patent Document 1 discloses a method for producing a ceramic thin film using a dispersion obtained by mixing an organometallic sol-gel solution and finely divided ceramic.
また、特許文献2には、有機金属化合物、金属アルコキシド、または有機酸塩と有機溶剤を混合したゾル−ゲル液中に金属酸化物の微粉末粒子を分散した分散液により、多結晶金属酸化物薄膜を製造する方法が開示されている。 Further, Patent Document 2 discloses that a polycrystalline metal oxide is obtained by dispersing a fine powder particle of a metal oxide in a sol-gel liquid in which an organic metal compound, a metal alkoxide, or an organic acid salt and an organic solvent are mixed. A method of manufacturing a thin film is disclosed.
また、特許文献3には、マイクロエマルジョン中の加水分解により得たチタン系複合金属酸化物超微粒子分散溶液に、同種のチタン系複合金属酸化物用のMOD溶液を混合した金属酸化物超微粒子分散溶液が開示されており、MOD溶液としては、n−酪酸バリウム、チタンイソプロポキシド、酪酸イソアミル、2,4−ペンタジオンからなる溶液が開示されている。 Further, Patent Document 3 discloses a metal oxide ultrafine particle dispersion obtained by mixing a titanium composite metal oxide ultrafine particle dispersion solution obtained by hydrolysis in a microemulsion with a MOD solution for the same type of titanium composite metal oxide. A solution is disclosed, and as a MOD solution, a solution composed of n-barium butyrate, titanium isopropoxide, isoamyl butyrate, and 2,4-pentadione is disclosed.
また、特許文献4には、ABO3(AはBa、Sr、Ca、Pb、Li、K、Na、BはTi、Zr、Nb、Ta、Fe)で表されるペロブスカイト構造を有し、平均一次粒子径が100nm以下である板状もしくは針状結晶である強誘電体酸化物粒子が分散され、かつ加熱により強誘電体酸化物を形成する可溶性金属化合物が溶解されている液状組成物が開示されており、可溶性金属化合物として硝酸塩等の無機塩、エチルヘキサン酸塩等の有機酸塩、アセチルアセトン錯体等の有機金属錯体、金属アルコキシドが開示されている。 Further, Patent Document 4 has a perovskite structure represented by ABO 3 (A is Ba, Sr, Ca, Pb, Li, K, Na, B is Ti, Zr, Nb, Ta, Fe). Disclosed is a liquid composition in which ferroelectric oxide particles that are plate-like or needle-like crystals having a primary particle diameter of 100 nm or less are dispersed and a soluble metal compound that forms a ferroelectric oxide by heating is dissolved. As soluble metal compounds, inorganic salts such as nitrates, organic acid salts such as ethyl hexanoate, organometallic complexes such as acetylacetone complex, and metal alkoxides are disclosed.
また、特許文献5には、一般式(I)で示される有機酸チタン化合物が開示されており、当該化合物が、酸化チタン、P(L)ZT強誘電体等の塗布熱分解法の安定な材料であることが開示されており、特許文献6には、チタンの有機酸塩を混合したチタン酸ジルコン酸鉛の製造方法が開示されている。 Patent Document 5 discloses an organic acid titanium compound represented by the general formula (I), which is stable in a coating pyrolysis method such as titanium oxide, P (L) ZT ferroelectric, and the like. It is disclosed that it is a material, and Patent Document 6 discloses a method for producing lead zirconate titanate mixed with an organic acid salt of titanium.
しかし、湿式コーティング法においてセラミックス粒子を用いたものは、得られる膜の平滑化が不充分であり、更に層を重ねる次の工程に影響を及ぼす場合がある。また、電気特性等の膜特性についても期待される特性を示さない問題点を有している。 However, those using ceramic particles in the wet coating method have insufficient smoothing of the resulting film, and may affect the next step of stacking layers. In addition, film characteristics such as electrical characteristics have a problem that the expected characteristics are not exhibited.
従って、本発明の課題は、セラミックス微粒子を用いた湿式コーティング法によるセラミックス膜の製造において、平滑で良好な特性を有する膜を得ることのできるセラミックス膜の製造方法を提供することにある。 Accordingly, an object of the present invention is to provide a method for producing a ceramic film which can obtain a smooth and good film in the production of a ceramic film by a wet coating method using ceramic fine particles.
本発明者等は、検討を重ねた結果、微粒子を含有する塗布液組成物を用いて製造した膜の最上層に有機酸金属誘導体を溶解させてなる塗布液組成物塗布することで、上記課題を解決し得ることを知見し、本発明に到達した。 As a result of repeated studies, the present inventors applied the coating solution composition obtained by dissolving the organic acid metal derivative in the uppermost layer of the film produced using the coating solution composition containing fine particles. The inventors have found that the problem can be solved, and have reached the present invention.
即ち、本発明は、塗布液組成物を基体上に塗布し加熱焼成してセラミックス膜を形成する湿式コーティングと焼成による膜製の造方法であり、分散媒中にセラミックス粒子を分散させてなる塗布液組成物(A)を基体上に塗布し、乾燥および/または焼成して得られた被膜基体上の最上層に有機酸金属誘導体を溶解させてなる塗布液組成物(B)を塗布し、焼成する工程によるセラミックス膜の製造方法を提供する。 That is, the present invention is a wet coating method in which a coating liquid composition is applied onto a substrate and then heated and fired to form a ceramic film, and a method for producing a film by firing, in which ceramic particles are dispersed in a dispersion medium. Applying the coating composition (B) obtained by dissolving the organic acid metal derivative in the uppermost layer on the coated substrate obtained by coating the coating composition obtained by applying the coating composition (A) on the substrate and drying and / or firing. A method for producing a ceramic film by a firing step is provided.
本発明によれば、表面の平滑なセラミックス薄膜を提供することができ、特に金属酸化物において、特性の良好な膜を供給することができる。 According to the present invention, it is possible to provide a ceramic thin film having a smooth surface, and in particular, it is possible to supply a film having good characteristics in a metal oxide.
本発明の方法により形成されるセラミックスの種類は、特に制限されるものではない。例えば、1種類または2種類以上の金属元素または半金属元素の酸化物、同窒化物、同炭化物、同酸窒化物、同酸炭化物、同窒化炭化物が挙げられる。本発明は、金属酸化物膜を形成するのに好適であり、酸化インジウム、スズ添加酸化インジウム(ITO)、酸化スズ、酸化チタン、酸化ジルコニウム、酸化ハフニウム、酸化バナジウム、酸化ニオブ、酸化タンタル、チタン酸バリウム(BTO)、チタン酸ストロンチウム(STO)、チタン酸バリウムストロンチウム(BST)、チタン酸鉛(PT)、ジルコン酸鉛(PZ)、チタン酸ジルコン酸鉛(PZT)、ニオブ添加チタン酸鉛、ニオブ添加チタン酸ジルコン酸鉛(PNZT)、ランタン添加チタン酸ジルコン酸鉛(PLZT)、チタン酸ビスマス(BTO)、ランタン添加チタン酸ビスマス(LBTO)、ネオジム添加チタン酸ビスマス、ニオブ添加チタン酸ビスマス、珪素−ハフニウム酸化物、アルミ−ハフニウム酸化物、ニオブ−タンタル酸化物、ニオブ酸リチウム、ニオブ酸カリウム、ニオブ酸カリウムリチウム、ニオブ酸カリウムナトリウム、ニオブ酸ビスマス、タンタル酸ビスマス、ニオブ酸ビスマスストロンチウム、ニオブ酸ビスマスバリウム、タンタル酸ビスマスストロンチウム、タンタル酸ビスマスバリウム、ニオブタンタル酸ビスマス、ニオブタンタル酸ビスマスストロンチウム、ニオブタンタル酸ビスマスバリウム、ニオブタンタル酸ビスマスストロンチウムバリウム、チタン添加酸化タンタル、チタン添加酸化ニオブ、イットリウム−バリウム−銅酸化物、イットリウム−バリウム−銅酸化物のイットリウムサイトの一部又は全部をランタノイド元素で置換した(イットリウム)−ランタノイド−バリウム−銅酸化物、ビスマス−ストロンチウム−カルシウム−銅酸化等を用いた光ガラス膜、ハードコーティング膜、触媒膜、絶縁体、誘電体、高誘電体、強誘電体、酸化物超電導体、圧電体、焦電体等への応用が可能である。本発明の製造方法は、得られる膜の平滑性が優れる特性を有するので、得られた膜の上に更なる膜を形成する必要のある用途で有効である。例えば、4族金属を含有する酸化物膜からなる電子材料用機能性セラミックスを形成する方法として好適に用いることができる。 The kind of ceramic formed by the method of the present invention is not particularly limited. Examples thereof include oxides, nitrides, carbides, oxynitrides, oxycarbides, and nitrides of one or more metal elements or metalloid elements. The present invention is suitable for forming a metal oxide film, indium oxide, tin-added indium oxide (ITO), tin oxide, titanium oxide, zirconium oxide, hafnium oxide, vanadium oxide, niobium oxide, tantalum oxide, titanium. Barium oxide (BTO), strontium titanate (STO), barium strontium titanate (BST), lead titanate (PT), lead zirconate (PZ), lead zirconate titanate (PZT), lead niobium titanate, Niobium-doped lead zirconate titanate (PNZT), lanthanum-doped lead zirconate titanate (PLZT), bismuth titanate (BTO), lanthanum-doped bismuth titanate (LBTO), neodymium-doped bismuth titanate, niobium-doped bismuth titanate, Silicon-hafnium oxide, aluminum-hafnium oxide, B-tantalum oxide, lithium niobate, potassium niobate, lithium lithium niobate, potassium sodium niobate, bismuth niobate, bismuth tantalate, bismuth strontium niobate, bismuth barium niobate, bismuth strontium tantalate, bismuth tantalate Barium, bismuth niobium tantalate, bismuth strontium niobium tantalate, bismuth barium niobium tantalate, bismuth strontium barium niobium tantalate, titanium-doped tantalum oxide, titanium-doped niobium oxide, yttrium-barium-copper oxide, yttrium-barium-copper oxide (Yttrium) -lanthanoid-barium-copper oxide, bismuth-strontium in which part or all of the yttrium site of the product is substituted with a lanthanoid element -Application to optical glass film, hard coating film, catalyst film, insulator, dielectric, high dielectric, ferroelectric, oxide superconductor, piezoelectric, pyroelectric, etc. using calcium-copper oxidation Is possible. Since the production method of the present invention has the characteristic that the smoothness of the obtained film is excellent, it is effective in applications where a further film needs to be formed on the obtained film. For example, it can be suitably used as a method for forming functional ceramics for electronic materials comprising an oxide film containing a Group 4 metal.
本発明に係るセラミックス粒子を含有する塗布液組成物(A)について説明する。
塗布液組成物(A)はセラミックス粒子を膜の構成材料として含有するものであり、水、有機溶剤または、水と有機溶剤の混合物等の流動性を有する分散媒中にセラミックス粒子が分散された塗布液である。塗布液組成物(A)には、膜の構成材料として、分散媒に対して可溶性の金属化合物を1種類又は2種類以上含有してもよく、増粘剤、揺変剤、レベリング剤、消泡剤、分散安定剤等の添加剤を含有してもよい。本発明に係る塗布組成物(A)における上記の成分の組成は、任意であり、塗布性、生産効率等により選択される。好ましい組成は、セラミックス粒子100質量部に対して、分散媒100〜10000質量部、分散媒可溶性の金属化合物0〜1000質量部、添加剤0〜100質量部である。
The coating liquid composition (A) containing the ceramic particles according to the present invention will be described.
The coating liquid composition (A) contains ceramic particles as a constituent material of the film, and the ceramic particles are dispersed in a fluid dispersion medium such as water, an organic solvent, or a mixture of water and an organic solvent. It is a coating solution. The coating liquid composition (A) may contain one or more metal compounds that are soluble in the dispersion medium as a constituent material of the film, and may include thickeners, thixotropic agents, leveling agents, You may contain additives, such as a foaming agent and a dispersion stabilizer. The composition of the above components in the coating composition (A) according to the present invention is arbitrary and is selected depending on the coating property, production efficiency, and the like. A preferable composition is 100 to 10,000 parts by weight of the dispersion medium, 0 to 1000 parts by weight of the metal compound soluble in the dispersion medium, and 0 to 100 parts by weight of the additive with respect to 100 parts by weight of the ceramic particles.
セラミックス粒子の組成は、形成しようとするセラミックス膜と同組成でもよく、その一部を構成するものでもよい。例えば、ITO透明導電膜を形成するときには、セラミックス粒子の組成はITOでもよく、酸化インジウムでもよい。酸化インジウムを用いる場合の、スズの膜への供給源は、上記の塗布液組成物(A)に含有されてもよい金属化合物となる。但し、特別な理由がない限り、セラミックス粒子組成は、所望のセラミックス膜と同組成であるものが一般的にコスト、性能の両方で優位である。また、セラミックス粒子は、分散性を保つために、表面改質されたものでもよい。 The composition of the ceramic particles may be the same as that of the ceramic film to be formed, or may constitute a part thereof. For example, when the ITO transparent conductive film is formed, the composition of the ceramic particles may be ITO or indium oxide. When indium oxide is used, the supply source to the tin film is a metal compound that may be contained in the coating liquid composition (A). However, unless there is a special reason, the ceramic particle composition having the same composition as the desired ceramic film is generally superior in both cost and performance. The ceramic particles may be surface-modified in order to maintain dispersibility.
本発明に係るセラミックス粒子の平均粒系は、分散性と膜の生産性の観点から、5〜500nmが好ましく10〜100nmがより好ましい。平均粒径が小さくなると、1回の塗布工程で得られる膜厚が小さくなり、μmオーダーの膜を製造する場合には、重ね塗りの回数が増加し、生産性がよくない。平均粒径が大きくなると、分散媒への分散安定性が悪くなり、沈殿が生じる等の問題が発生する傾向がある。 The average particle size of the ceramic particles according to the present invention is preferably 5 to 500 nm, and more preferably 10 to 100 nm, from the viewpoints of dispersibility and film productivity. When the average particle size becomes small, the film thickness obtained in a single coating process becomes small, and in the case of producing a film of the order of μm, the number of times of overcoating increases and the productivity is not good. When the average particle size is increased, the dispersion stability in the dispersion medium is deteriorated, and there is a tendency that problems such as precipitation occur.
塗布液組成物(A)に使用される分散媒を構成する有機溶剤としては、アルコール系溶剤、ポリオール系溶剤、ケトン系溶剤、エステル系溶剤、エーテル系溶剤、脂肪族または脂環族炭化水素系溶剤、芳香族炭化水素系溶剤、シアノ基を有する炭化水素溶剤、その他の溶剤等が挙げられ、これらは、1種類または2種類以上混合して用いることができる。 Examples of the organic solvent constituting the dispersion medium used in the coating liquid composition (A) include alcohol solvents, polyol solvents, ketone solvents, ester solvents, ether solvents, aliphatic or alicyclic hydrocarbons. Examples thereof include a solvent, an aromatic hydrocarbon solvent, a hydrocarbon solvent having a cyano group, and other solvents. These may be used alone or in combination of two or more.
アルコール系溶剤としては、メタノール、エタノール、プロパノール、イソプロパノール、1−ブタノール、イソブタノール、2−ブタノール、第3ブタノール、ペンタノール、イソペンタノール、2−ペンタノール、ネオペンタノール、第3ペンタノール、ヘキサノール、2−ヘキサノール、ヘプタノール、2−ヘプタノール、オクタノール、2―エチルヘキサノール、2−オクタノール、シクロペンタノール、シクロヘキサノール、シクロヘプタノール、メチルシクロペンタノール、メチルシクロヘキサノール、メチルシクロヘプタノール、ベンジルアルコール、2−メトキシエチルアルコール、2−ブトキシエチルアルコール、2−(2−メトキシエトキシ)エタノール、2−(N,N−ジメチルアミノ)エタノール、3−(N,N−ジメチルアミノ)プロパノール等が挙げられる。 Examples of alcohol solvents include methanol, ethanol, propanol, isopropanol, 1-butanol, isobutanol, 2-butanol, tertiary butanol, pentanol, isopentanol, 2-pentanol, neopentanol, tertiary pentanol, Hexanol, 2-hexanol, heptanol, 2-heptanol, octanol, 2-ethylhexanol, 2-octanol, cyclopentanol, cyclohexanol, cycloheptanol, methylcyclopentanol, methylcyclohexanol, methylcycloheptanol, benzyl alcohol 2-methoxyethyl alcohol, 2-butoxyethyl alcohol, 2- (2-methoxyethoxy) ethanol, 2- (N, N-dimethylamino) ethanol, 3- (N, N- Methylamino) propanol.
ポリオール系溶剤としては、エチレングリコール、プロピレングリコール、1,2−ブタンジオール、1,3−ブタンジオール、1,4−ブタンジオール、1,5−ペンタンジオール、ネオペンチルグリコール、イソプレングリコール(3−メチル−1,3−ブタンジオール)、1,2−ヘキサンジオール、1,6−ヘキサンジオール、3−メチル−1,5−ペンタンジオール、1,2−オクタンジオール、オクタンジオール(2−エチル−1,3−ヘキサンジオール)、2−ブチル−2−エチル−1,3−プロパンジオール、2,5−ジメチル−2,5−ヘキサンジオール、1,2−シクロヘキサンジオール、1,4−シクロヘキサンジオール、1,4−シクロヘキサンジメタノール等が挙げられる。 Examples of polyol solvents include ethylene glycol, propylene glycol, 1,2-butanediol, 1,3-butanediol, 1,4-butanediol, 1,5-pentanediol, neopentyl glycol, isoprene glycol (3-methyl -1,3-butanediol), 1,2-hexanediol, 1,6-hexanediol, 3-methyl-1,5-pentanediol, 1,2-octanediol, octanediol (2-ethyl-1, 3-hexanediol), 2-butyl-2-ethyl-1,3-propanediol, 2,5-dimethyl-2,5-hexanediol, 1,2-cyclohexanediol, 1,4-cyclohexanediol, 1, 4-cyclohexanedimethanol etc. are mentioned.
ケトン系溶剤としては、アセトン、エチルメチルケトン、メチルブチルケトン、メチルイソブチルケトン、エチルブチルケトン、ジプロピルケトン、ジイソブチルケトン、メチルアミルケトン、シクロヘキサノン、メチルシクロヘキサノン等が挙げられる。 Examples of the ketone solvent include acetone, ethyl methyl ketone, methyl butyl ketone, methyl isobutyl ketone, ethyl butyl ketone, dipropyl ketone, diisobutyl ketone, methyl amyl ketone, cyclohexanone, and methylcyclohexanone.
エステル系溶剤としては、ギ酸メチル、ギ酸エチル、酢酸メチル、酢酸エチル、酢酸イソプロピル、酢酸ブチル、酢酸イソブチル、酢酸第2ブチル、酢酸第3ブチル、酢酸アミル、酢酸イソアミル、酢酸第3アミル、酢酸フェニル、プロピオン酸メチル、プロピオン酸エチル、プロピオン酸イソプロピル、プロピオン酸ブチル、プロピオン酸イソブチル、プロピオン酸第2ブチル、プロピオン酸第3ブチル、プロピオン酸アミル、プロピオン酸イソアミル、プロピオン酸第3アミル、プロピオン酸フェニル、乳酸メチル、乳酸エチル、メトキシプロピオン酸メチル、エトキシプロピオン酸メチル、メトキシプロピオン酸エチル、エトキシプロピオン酸エチル、エチレングリコールモノメチルエーテルアセテート、ジエチレングリコールモノメチルエーテルアセテート、エチレングリコールモノエチルエーテルアセテート、エチレングリコールモノプロピルエーテルアセテート、エチレングリコールモノイソプロピルエーテルアセテート、エチレングリコールモノブチルエーテルアセテート、エチレングリコールモノ第2ブチルエーテルアセテート、エチレングリコールモノイソブチルエーテルアセテート、エチレングリコールモノ第3ブチルエーテルアセテート、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエチルエーテルアセテート、プロピレングリコールモノプロピルエーテルアセテート、プロピレングリコールモノイソプロピルエーテルアセテート、プロピレングリコールモノブチルエーテルアセテート、プロピレングリコールモノ第2ブチルエーテルアセテート、プロピレングリコールモノイソブチルエーテルアセテート、プロピレングリコールモノ第3ブチルエーテルアセテート、ブチレングリコールモノメチルエーテルアセテート、ブチレングリコールモノエチルエーテルアセテート、ブチレングリコールモノプロピルエーテルアセテート、ブチレングリコールモノイソプロピルエーテルアセテート、ブチレングリコールモノブチルエーテルアセテート、ブチレングリコールモノ第2ブチルエーテルアセテート、ブチレングリコールモノイソブチルエーテルアセテート、ブチレングリコールモノ第3ブチルエーテルアセテート、アセト酢酸メチル、アセト酢酸エチル、オキソブタン酸メチル、オキソブタン酸エチル、γ−ラクトン、δ−ラクトン等が挙げられる。 Examples of ester solvents include methyl formate, ethyl formate, methyl acetate, ethyl acetate, isopropyl acetate, butyl acetate, isobutyl acetate, 2 butyl acetate, 3 butyl acetate, amyl acetate, isoamyl acetate, 3 amyl acetate, and phenyl acetate , Methyl propionate, ethyl propionate, isopropyl propionate, butyl propionate, isobutyl propionate, 2 butyl propionate, 3 butyl propionate, amyl propionate, isoamyl propionate, 3 amyl propionate, phenyl propionate , Methyl lactate, ethyl lactate, methyl methoxypropionate, methyl ethoxypropionate, ethyl methoxypropionate, ethyl ethoxypropionate, ethylene glycol monomethyl ether acetate, diethylene glycol monomethyl Ether ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monopropyl ether acetate, ethylene glycol monoisopropyl ether acetate, ethylene glycol monobutyl ether acetate, ethylene glycol mono second butyl ether acetate, ethylene glycol monoisobutyl ether acetate, ethylene glycol mono third Butyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, propylene glycol monoisopropyl ether acetate, propylene glycol monobutyl ether acetate, propylene glycol mono secondary Tyl ether acetate, propylene glycol monoisobutyl ether acetate, propylene glycol mono tertiary butyl ether acetate, butylene glycol monomethyl ether acetate, butylene glycol monoethyl ether acetate, butylene glycol monopropyl ether acetate, butylene glycol monoisopropyl ether acetate, butylene glycol monobutyl ether Acetate, butylene glycol mono-secondary butyl ether acetate, butylene glycol mono-isobutyl ether acetate, butylene glycol mono-tert-butyl ether acetate, methyl acetoacetate, ethyl acetoacetate, methyl oxobutanoate, ethyl oxobutanoate, γ-lactone, δ-lactone, etc. Can be mentioned.
エーテル系溶剤としては、テトラヒドロフラン、テトラヒドロピラン、モルホリン、エチレングリコールジメチルエーテル、ジエチレングリコールジメチルエーテル、トリエチレングリコールジメチルエーテル、ジブチルエーテル、ジエチルエーテル、ジオキサン等が挙げられる。 Examples of the ether solvent include tetrahydrofuran, tetrahydropyran, morpholine, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, dibutyl ether, diethyl ether, dioxane and the like.
脂肪族または脂環族炭化水素系溶剤としては、ペンタン、ヘキサン、シクロヘキサン、メチルシクロヘキサン、ジメチルシクロヘキサン、エチルシクロヘキサン、ヘプタン、オクタン、デカリン、ソルベントナフサ等が挙げられる。 Examples of the aliphatic or alicyclic hydrocarbon solvent include pentane, hexane, cyclohexane, methylcyclohexane, dimethylcyclohexane, ethylcyclohexane, heptane, octane, decalin, and solvent naphtha.
芳香族炭化水素系溶剤としては、ベンゼン、トルエン、エチルベンゼン、キシレン、メシチレン、ジエチルベンゼン、クメン、イソブチルベンゼン、シメン、テトラリンが挙げられる。 Examples of the aromatic hydrocarbon solvent include benzene, toluene, ethylbenzene, xylene, mesitylene, diethylbenzene, cumene, isobutylbenzene, cymene, and tetralin.
シアノ基を有する炭化水素溶剤としては、1−シアノプロパン、1−シアノブタン、1−シアノヘキサン、シアノシクロヘキサン、シアノベンゼン、1,3−ジシアノプロパン、1,4−ジシアノブタン、1,6−ジシアノヘキサン、1,4−ジシアノシクロヘキサン、1,4−ジシアノベンゼン等が挙げられる。 Examples of the hydrocarbon solvent having a cyano group include 1-cyanopropane, 1-cyanobutane, 1-cyanohexane, cyanocyclohexane, cyanobenzene, 1,3-dicyanopropane, 1,4-dicyanobutane, 1,6-dicyanohexane. 1,4-dicyanocyclohexane, 1,4-dicyanobenzene and the like.
その他の有機溶剤としては、N−メチル−2−ピロリドン、ジメチルスルホキシド、ジメチルホルムアミドが挙げられる。 Examples of other organic solvents include N-methyl-2-pyrrolidone, dimethyl sulfoxide, and dimethylformamide.
上記の有機溶剤は、セラミックス粒子を分散させやすく、後に説明する可溶性の金属化合物に対する充分な溶解性を示し塗布溶剤として使用し易いものを選択すればよい。上記の有機溶剤の中でも、アルコール系溶剤はシリコン基体、金属基体、セラミックス基体、ガラス基体、樹脂基体等の様々な基体に対する塗布溶媒として良好な塗布性を示し、セラミックス粒子の分散性が良好であるので好ましく、1−ブタノールがより好ましい。また、混合溶剤を用いる場合もブタノールを主成分としたものが好ましく、1−ブタノールを50質量%以上使用するものがより好ましい。 The organic solvent may be selected from those that are easy to disperse ceramic particles and that exhibit sufficient solubility in a soluble metal compound described later and that are easy to use as a coating solvent. Among the above organic solvents, alcohol solvents exhibit good coating properties as coating solvents for various substrates such as silicon substrates, metal substrates, ceramic substrates, glass substrates, and resin substrates, and have good dispersibility of ceramic particles. Therefore, 1-butanol is more preferable. Moreover, when using a mixed solvent, the thing which has butanol as a main component is preferable, and what uses 50 mass% or more of 1-butanol is more preferable.
本発明に係る塗布液組成物(A)に含有されてもよい可溶性の金属化合物としては、金属アルコキシド化合物、有機酸金属誘導体、β−ジケトン錯体、β−ケトエステル錯体、硝酸塩、硫酸塩、水酸化物、ハライド等が挙げられ、これらを構成する金属原子としては、リチウム、ナトリウム、カリウム、ルビジウム、セシウム等の1族元素、ベリリウム、マグネシウム、カルシウム、ストロンチウム、バリウム等の2族元素、スカンジウム、イットリウム、ランタノイド元素(ランタン、セリウム、プラセオジム、ネオジム、プロメチウム、サマリウム、ユーロピウム、ガドリニウム、テルビウム、ジスプロシウム、ホルミウム、エルビウム、ツリウム、イッテルビウム、ルテチウム)、アクチノイド元素等の3族元素、チタニウム、ジルコニウム、ハフニウムの4族元素、バナジウム、ニオブ、タンタルの5族元素、クロム、モリブデン、タングステンの6族元素、マンガン、テクネチウム、レニウムの7族元素、鉄、ルテニウム、オスミウムの8族元素、コバルト、ロジウム、イリジウムの9族元素、ニッケル、パラジウム、白金の10族元素、銅、銀、金の11族元素、亜鉛、カドミウム、水銀の12族元素、アルミニウム、ガリウム、インジウム、タリウムの13族元素、ゲルマニウム、錫、鉛の14族元素、砒素、アンチモン、ビスマスの15族元素、ポロニウムの16族元素が挙げられる。 Soluble metal compounds that may be contained in the coating liquid composition (A) according to the present invention include metal alkoxide compounds, organic acid metal derivatives, β-diketone complexes, β-ketoester complexes, nitrates, sulfates, and hydroxides. And metal atoms constituting these include group 1 elements such as lithium, sodium, potassium, rubidium and cesium, group 2 elements such as beryllium, magnesium, calcium, strontium and barium, scandium and yttrium. Lanthanoid elements (lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium), group 3 elements such as actinoid elements, titanium, zirconium Group 4 elements of Um, Hafnium, Group 5 elements of vanadium, niobium, tantalum, Group 6 elements of chromium, molybdenum, tungsten, Group 7 elements of manganese, technetium, rhenium, Group 8 elements of iron, ruthenium, osmium, cobalt, Rhodium, iridium group 9 element, nickel, palladium, platinum group 10 element, copper, silver, gold group 11 element, zinc, cadmium, mercury group 12 element, aluminum, gallium, indium, thallium group 13 element, Germanium, tin, lead group 14 elements, arsenic, antimony, bismuth group 15 elements, and polonium group 16 elements.
上記の金属アルコキシドを構成するアルコールとしては、メタノール、エタノール、プロパノール、イソプロパノール、1−ブタノール、イソブタノール、2−ブタノール、第3ブタノール、ペンタノール、イソペンタノール、2−ペンタノール、ネオペンタノール、第3ペンタノール、ヘキサノール、2−ヘキサノール、ヘプタノール、2−ヘプタノール、オクタノール、2―エチルヘキサノール、2−オクタノール、シクロペンタノール、シクロヘキサノール、シクロヘプタノール、メチルシクロペンタノール、メチルシクロヘキサノール、メチルシクロヘプタノール、ベンジルアルコール、2−メトキシエチルアルコール、2−ブトキシエチルアルコール、2−(2−メトキシエトキシ)エタノール、2−(N,N−ジメチルアミノ)エタノール、3−(N,N−ジメチルアミノ)プロパノール等が挙げられ、有機酸金属誘導体を構成する有機酸としては、、酢酸、プロピオン酸、酪酸、イソ酪酸、吉草酸、カプロン酸、カプリル酸、2−エチルヘキサン酸、ペラルゴン酸、カプリン酸、ネオデカン酸、ウンデカン酸、ラウリン酸、トリデカン酸、ミリスチン酸、ペンタデカン酸、パルミチン酸、マルガリン酸、ステアリン酸、リノール酸、γ−リノレン酸、リノレン酸、リシノール酸、乳酸、12−ヒドロキシステアリン酸、アクリル酸、メタクリル酸、シクロヘキサンカルボン酸、トリフルオロ酢酸、ペンタフルオロプロピオン酸等が挙げられ、β−ジケトン錯体を構成するβ−ジケトンとしては、アセチルアセトン、ヘキサン−2,4−ジオン、5−メチルヘキサン−2,4−ジオン、ヘプタン−2,4−ジオン、2−メチルヘプタン−3,5−ジオン、5−メチルヘプタン−2,4−ジオン、6−メチルヘプタン−2,4−ジオン、2,2−ジメチルヘプタン−3,5−ジオン、2,6−ジメチルヘプタン−3,5−ジオン、2,2,6−トリメチルヘプタン−3,5−ジオン、2,2,6,6−テトラメチルヘプタン−3,5−ジオン、オクタン−2,4−ジオン、2,2,6−トリメチルオクタン−3,5−ジオン、2,6−ジメチルオクタン−3,5−ジオン、2,2−ジメチル−6−エチルオクタン−3,5−ジオン、2,2,6,6−テトラメチルオクタン−3,5−ジオン、2,9−ジメチルノナン−4,6−ジオン、2,2,6,6−テトラメチル−3,5−ノナンジオン、2−メチル−6−エチルデカン−3,5−ジオン、2,2−ジメチル−6−エチルデカン−3,5−ジオン等のアルキル置換β−ジケトン類;1,1,1−トリフルオロペンタン−2,4−ジオン、1,1,1−トリフルオロ−5,5−ジメチルヘキサン−2,4−ジオン、1,1,1,5,5,5−ヘキサフルオロペンタン−2,4−ジオン、1,3−ジパーフルオロヘキシルプロパン−1,3−ジオン等のフッ素置換アルキルβ−ジケトン類;5−メトキシペンタン−2,4−ジオン、2-メチル−6−メトキシヘプタン−3,5−ジオン、1,1,5,5−テトラメチル−1−メトキシヘキサン−2,4−ジオン、2,2,6,6−テトラメチル−1−メトキシヘプタン−3,5−ジオン、2,2,6,6−テトラメチル−1−(2−メトキシエトキシ)ヘプタン−3,5−ジオン等のエーテル置換β−ジケトンが挙げられ、β−ケトエステルとしては、アセト酢酸エステル類が挙げられる。 Examples of the alcohol constituting the metal alkoxide include methanol, ethanol, propanol, isopropanol, 1-butanol, isobutanol, 2-butanol, tertiary butanol, pentanol, isopentanol, 2-pentanol, neopentanol, Tertiary pentanol, hexanol, 2-hexanol, heptanol, 2-heptanol, octanol, 2-ethylhexanol, 2-octanol, cyclopentanol, cyclohexanol, cycloheptanol, methylcyclopentanol, methylcyclohexanol, methylcyclo Heptanol, benzyl alcohol, 2-methoxyethyl alcohol, 2-butoxyethyl alcohol, 2- (2-methoxyethoxy) ethanol, 2- (N, N-dimethylamino) Examples of the organic acid that constitutes the organic acid metal derivative include acetic acid, propionic acid, butyric acid, isobutyric acid, valeric acid, caproic acid, caprylic acid, and the like, including butanol and 3- (N, N-dimethylamino) propanol. 2-ethylhexanoic acid, pelargonic acid, capric acid, neodecanoic acid, undecanoic acid, lauric acid, tridecanoic acid, myristic acid, pentadecanoic acid, palmitic acid, margaric acid, stearic acid, linoleic acid, γ-linolenic acid, linolenic acid, Examples thereof include ricinoleic acid, lactic acid, 12-hydroxystearic acid, acrylic acid, methacrylic acid, cyclohexanecarboxylic acid, trifluoroacetic acid, pentafluoropropionic acid and the like. Β-diketone constituting the β-diketone complex includes acetylacetone and hexane. -2,4-dione, 5-methylhexane-2 4-dione, heptane-2,4-dione, 2-methylheptane-3,5-dione, 5-methylheptane-2,4-dione, 6-methylheptane-2,4-dione, 2,2-dimethyl Heptane-3,5-dione, 2,6-dimethylheptane-3,5-dione, 2,2,6-trimethylheptane-3,5-dione, 2,2,6,6-tetramethylheptane-3, 5-dione, octane-2,4-dione, 2,2,6-trimethyloctane-3,5-dione, 2,6-dimethyloctane-3,5-dione, 2,2-dimethyl-6-ethyloctane -3,5-dione, 2,2,6,6-tetramethyloctane-3,5-dione, 2,9-dimethylnonane-4,6-dione, 2,2,6,6-tetramethyl-3 , 5-nonanedione, 2-methyl-6-e Alkyl-substituted β-diketones such as tildecane-3,5-dione, 2,2-dimethyl-6-ethyldecane-3,5-dione; 1,1,1-trifluoropentane-2,4-dione, 1, 1,1-trifluoro-5,5-dimethylhexane-2,4-dione, 1,1,1,5,5,5-hexafluoropentane-2,4-dione, 1,3-diperfluorohexyl Fluorine-substituted alkyl β-diketones such as propane-1,3-dione; 5-methoxypentane-2,4-dione, 2-methyl-6-methoxyheptane-3,5-dione, 1,1,5,5 -Tetramethyl-1-methoxyhexane-2,4-dione, 2,2,6,6-tetramethyl-1-methoxyheptane-3,5-dione, 2,2,6,6-tetramethyl-1- (2-methoxyethoxy) he Ethers such as Tan-3,5-dione substituted β- diketone. Examples of the β- ketoester include acetoacetic esters.
上記の可溶性の金属化合物としては、揮発性による膜中の金属成分の損失がなく、溶解状態の安定性が優れること、1回のコーティングで得られる膜の厚さを厚くできることから、有機酸金属誘導体が好ましく、炭素数2〜18の脂肪族有機酸金属誘導体がより好ましく、炭素数6〜12の脂肪族有機酸金属誘導体がより好ましい。 As the above-mentioned soluble metal compound, there is no loss of metal components in the film due to volatility, the stability of the dissolved state is excellent, and the thickness of the film obtained by one coating can be increased. Derivatives are preferable, aliphatic organic acid metal derivatives having 2 to 18 carbon atoms are more preferable, and aliphatic organic acid metal derivatives having 6 to 12 carbon atoms are more preferable.
有機酸金属誘導体は、一般に(RCOO)nM(Rは、有機基、Mは金属原子、nは金属原子Mの価数)で表されるが、4族元素や5族元素の有機酸金属誘導体は、必ずしもこの構造をはならずに以下に示す構造となる場合がある。例えば、テトラハライド、ペンタハライド、テトラアルコキシド、ペンタアルコキシド等のモノメリックな金属化合物を原料として得られるものは、通常、1分子当たりの金属原子の数は1〜6である。このようなものは、製造が容易で有機溶剤に対する溶解性が良好であり、本発明の塗布液組成物の有機酸金属誘導体として好ましいものである。本発明に係る塗布液組成物(A)に含有されてもよい有機酸金属誘導体及び後述する塗布液組成物(B)に含有される有機酸金属誘導体については、(RCOO)nMに限らず、下記の構造をも包含する。 The organic acid metal derivative is generally represented by (RCOO) n M (R is an organic group, M is a metal atom, and n is a valence of the metal atom M). A derivative does not necessarily have this structure and may have the following structure. For example, what is obtained from a monomeric metal compound such as tetrahalide, pentahalide, tetraalkoxide, or pentaalkoxide as a raw material usually has 1 to 6 metal atoms per molecule. Such a product is easy to produce and has good solubility in an organic solvent, and is preferable as an organic acid metal derivative of the coating solution composition of the present invention. The organic acid metal derivative that may be contained in the coating liquid composition (A) according to the present invention and the organic acid metal derivative that is contained in the coating liquid composition (B) described later are not limited to (RCOO) n M. The following structures are also included.
(上記、化学式において、Mは、チタニウム、ジルコニウム又はハフニウムを表し、Lは有機酸残基を表し、aは0〜4の数を表し、bは1または2を表す。) (In the above chemical formula, M represents titanium, zirconium or hafnium, L represents an organic acid residue, a represents a number of 0 to 4, and b represents 1 or 2.)
(上記、化学式において、Xは、バナジウム、ニオブ、タンタルを表し、Lは有機酸残基を表し、cは0〜2の数を表す。) (In the above chemical formula, X represents vanadium, niobium, and tantalum, L represents an organic acid residue, and c represents a number of 0 to 2.)
(上記、化学式において、Xは、バナジウム、ニオブ、タンタルを表し、Lは有機酸残基を表す。) (In the above chemical formula, X represents vanadium, niobium, or tantalum, and L represents an organic acid residue.)
本発明に係る塗布液組成物(B)について説明する。
塗布液組成物(B)は、形成されるセラミックス膜の平滑性を向上させるために用いられる。塗布液組成物(B)は有機酸金属誘導体をセラミックス膜のプレカーサとして含有するものであり、有機溶剤または水と有機溶剤の混合物等の流動性を有する溶媒中に有機酸金属誘導体を溶解させた塗布液である。塗布液組成物(B)には、増粘剤、揺変剤、レベリング剤、消泡剤、可溶化剤の添加剤を含有してもよい。本発明に係る塗布組成物(B)における上記の成分の組成は、任意であり、塗布性、生産効率等により選択される。好ましい組成は、有機酸金属誘導体100質量部に対して、溶媒100〜10000質量部、添加剤0〜100質量部である。
The coating liquid composition (B) according to the present invention will be described.
The coating liquid composition (B) is used for improving the smoothness of the formed ceramic film. The coating liquid composition (B) contains an organic acid metal derivative as a ceramic film precursor, and the organic acid metal derivative is dissolved in a solvent having fluidity such as an organic solvent or a mixture of water and an organic solvent. It is a coating solution. The coating liquid composition (B) may contain thickeners, thixotropic agents, leveling agents, antifoaming agents, and solubilizer additives. The composition of the above components in the coating composition (B) according to the present invention is arbitrary and is selected depending on the coating property, production efficiency, and the like. A preferable composition is 100 to 10000 parts by mass of the solvent and 0 to 100 parts by mass of the additive with respect to 100 parts by mass of the organic acid metal derivative.
塗布液組成物(B)においては、有機酸金属誘導体の組成は、形成しようとするセラミックス膜と同組成となるように配合される。 In the coating liquid composition (B), the composition of the organic acid metal derivative is blended so as to have the same composition as the ceramic film to be formed.
塗布液組成物(B)に含有される有機酸金属誘導体としては、前記の塗布液組成物(A)の分散媒可溶性金属化合物で例示のものが挙げられる。有機酸金属誘導体としては、炭素数2〜18の脂肪族有機酸金属誘導体が好ましく、炭素数6〜12の脂肪族有機酸金属誘導体がより好ましい。 Examples of the organic acid metal derivative contained in the coating liquid composition (B) include those exemplified as the dispersion medium-soluble metal compound of the coating liquid composition (A). As the organic acid metal derivative, an aliphatic organic acid metal derivative having 2 to 18 carbon atoms is preferable, and an aliphatic organic acid metal derivative having 6 to 12 carbon atoms is more preferable.
本発明のセラミックス膜の製造方法は、分散媒中にセラミックス粒子を分散させてなる塗布液組成物(A)を基体上に塗布し、乾燥および/または焼成して得られた被塗布基体上の最上層に有機酸金属誘導体を溶解させてなる塗布液組成物(B)を塗布し、焼成する工程によるセラミックス膜製造方法であり、塗布液組成物(A)によるコーティングを1回または複数回繰り返し得た被膜の最上層に塗布液組成物(B)によるコーティングを1回または複数回繰り返すことを特徴とする。塗布液組成物(B)によるコーティングは、セラミックス膜の平滑化、セラミックス膜の特性向上のみを目的とする場合は1回で充分であるが、膜の厚さを調節するために複数回行ってもよい。 In the method for producing a ceramic film of the present invention, a coating liquid composition (A) obtained by dispersing ceramic particles in a dispersion medium is coated on a substrate, dried and / or baked, and then on a coated substrate. This is a method for producing a ceramic film by applying and baking a coating liquid composition (B) in which an organic acid metal derivative is dissolved in the uppermost layer, and coating with the coating liquid composition (A) is repeated one or more times. The coating with the coating liquid composition (B) is repeated once or a plurality of times on the uppermost layer of the obtained film. The coating with the coating liquid composition (B) may be performed only once for the purpose of smoothing the ceramic film and improving the characteristics of the ceramic film. However, it may be performed several times to adjust the thickness of the film. Also good.
塗布液組成物の塗布方法としては、スピンコート法、ディップ法、スプレーコート法、ミストコート法、フローコート法、カーテンコート法、ロールコート法、ナイフコート法、バーコート法、スクリーン印刷法、インクジェット法、刷毛塗り等が挙げられる。 As a coating method of the coating liquid composition, spin coating method, dip method, spray coating method, mist coating method, flow coating method, curtain coating method, roll coating method, knife coating method, bar coating method, screen printing method, inkjet method Method, brushing and the like.
本発明のセラミックス膜の製造方法における乾燥とは、塗布液組成物を塗布して得た塗布膜から、分散媒、溶媒等の揮発成分を加熱により気化させ除去する工程である。通常100℃〜200℃の温度で行う。本発明の製造方法における焼成工程とは、塗布液組成物を塗布して得た塗布膜を加熱によりセラミックス膜へと変換させる工程であり、通常350〜800℃の温度で行う。本発明のセラミックス膜の製造方法においては、乾燥は必ずしも必須の工程ではないが、得られるセラミックス膜の均一性が良好となるので、乾燥の工程を組み入れることが好ましい。 Drying in the method for producing a ceramic film of the present invention is a step of removing volatile components such as a dispersion medium and a solvent by heating and evaporating them from the coating film obtained by coating the coating liquid composition. Usually, it is performed at a temperature of 100 to 200 ° C. The baking process in the manufacturing method of this invention is a process of converting the coating film obtained by apply | coating a coating liquid composition into a ceramic film by heating, and is normally performed at the temperature of 350-800 degreeC. In the method for producing a ceramic film of the present invention, drying is not necessarily an essential step, but it is preferable to incorporate a drying step because the resulting ceramic film has good uniformity.
本発明のセラミックス膜の製造方法においては、塗布された組成物中の溶剤を乾燥させる乾燥工程の後で、焼成工程よりも低い温度で加熱する仮焼工程を組み入れることもでき、焼成工程の後にアニール工程を組み入れてもよい。仮焼工程における温度は150℃〜600℃が好ましく、200℃〜400℃がより好ましい。アニール工程における温度は450℃〜1200℃が好ましく、600℃〜1000℃がより好ましい。 In the method for producing a ceramic film of the present invention, a calcination step of heating at a lower temperature than the firing step can be incorporated after the drying step of drying the solvent in the applied composition, and after the firing step. An annealing step may be incorporated. The temperature in the calcination step is preferably 150 ° C to 600 ° C, more preferably 200 ° C to 400 ° C. The temperature in the annealing step is preferably 450 ° C. to 1200 ° C., more preferably 600 ° C. to 1000 ° C.
上記の仮焼工程、焼成工程は、膜形成を促進する目的や膜の表面状態や電気特性を改善する目的で種々のガス雰囲気の下で行ってもよい。該ガスとしては、酸素、オゾン、水、二酸化炭素、過酸化水素、窒素、ヘリウム、水素、アルゴン等が挙げられる。また、プラズマや各種放射線等の熱以外のエネルギーを印加または照射してもよい。 The calcination step and the firing step may be performed under various gas atmospheres for the purpose of promoting film formation and improving the surface state and electrical characteristics of the film. Examples of the gas include oxygen, ozone, water, carbon dioxide, hydrogen peroxide, nitrogen, helium, hydrogen, and argon. Further, energy other than heat, such as plasma or various radiations, may be applied or irradiated.
塗布液組成物(A)によるコーティング、塗布液組成物(B)によるコーティングを複数回実施する場合、上記の塗布から任意の工程までを複数繰り返せばよい。例えば、塗布から焼成の全ての工程を複数回繰り返してもよく、塗布と乾燥までを複数回繰り返してもよく、塗布、乾燥、仮焼まで複数回繰り返してもよい。また、塗布液組成物(A)によるコーティングを行った後に塗布液組成物(B)をコーティングする場合も同様であり、塗布液組成物(A)による塗布後、乾燥後、仮焼後、焼成後のいずれでもよい。 When the coating with the coating liquid composition (A) and the coating with the coating liquid composition (B) are performed a plurality of times, the above-described application to any step may be repeated a plurality of times. For example, all the steps from application to baking may be repeated a plurality of times, application and drying may be repeated a plurality of times, or application, drying, and calcination may be repeated a plurality of times. The same applies when coating the coating liquid composition (B) after coating with the coating liquid composition (A). After coating with the coating liquid composition (A), drying, calcining, and baking. Any of later may be sufficient.
以下、実施例、比較例をもって本発明を更に詳細に説明する。しかしながら、本発明は以下の実施例等によって何ら制限を受けるものではない。
[製造例]2−エチルヘキサン酸チタン誘導体の製造
乾燥アルゴンガス雰囲気下で、反応フラスコにテトラキス(イソプロポキシ)チタン0.5モル、乾燥トルエン250mlを仕込み、これに2−エチルヘキサン酸2モルを加え、4時間還流させた。バス温度135℃でトルエン及び低沸点物を反応系から留去した後、さらに系内を3〜1torrに減圧して濃縮を行い黄色粘性液体を279g得た。得られた黄色液体について、以下の測定を行った。
Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples. However, the present invention is not limited by the following examples.
[Production Example] Production of 2-ethylhexanoic acid titanium derivative Under a dry argon gas atmosphere, a reaction flask was charged with 0.5 mol of tetrakis (isopropoxy) titanium and 250 ml of dry toluene, and 2 mol of 2-ethylhexanoic acid was added thereto. The mixture was refluxed for 4 hours. After toluene and low-boiling substances were distilled off from the reaction system at a bath temperature of 135 ° C., the system was further reduced in pressure to 3 to 1 torr to obtain 279 g of a yellow viscous liquid. The following measurement was performed on the obtained yellow liquid.
・元素分析(チタン含有量分析:灰化法により二酸化チタンとして定量、炭素及び水素含有量:CHN元素分析)
Ti;12.1質量%、C;54.9質量%、H;8.5質量%
・IR測定及び1H−NMR
チタンと結合するイソプロポキシ基が存在しないことを確認。
Elemental analysis (titanium content analysis: quantified as titanium dioxide by ashing method, carbon and hydrogen content: CHN elemental analysis)
Ti; 12.1% by mass, C; 54.9% by mass, H; 8.5% by mass
・ IR measurement and 1 H-NMR
Confirmed that there is no isopropoxy group that binds to titanium.
[実施例1、比較例1]
上記製造例で得た2−エチルヘキサン酸チタン誘導体、2−エチルヘキサン酸バリウム、2−エチルヘキサン酸ストロンチウムをチタンとバリウムとストロンチウムの金属モル比が1:0.6:0.4となり、金属換算でのチタン含有量が0.4モル/kgとなるように1−ブタノールに溶解させた組成物1質量部と、平均粒子径50nmのTiBa0.6Sr0.4O3微粒子の含有量が0.4モル/kgの1−ブタノール分散液である組成物7質量部を混合し、塗布液組成物(a−1)とした。また、上記製造例で得た2−エチルヘキサン酸チタン誘導体、2−エチルヘキサン酸バリウム、2−エチルヘキサン酸ストロンチウムをチタンとバリウムとストロンチウムの金属モル比が1:0.6:0.4となり、チタンが金属換算で0.4モル/kgとなるように1−ブタノールに溶解させた組成物を塗布液組成物(b−1)とした。
[Example 1, Comparative Example 1]
The metal molar ratio of titanium, barium, and strontium in the 2-ethylhexanoate titanium derivative, barium 2-ethylhexanoate, and strontium 2-ethylhexanoate obtained in the above production example was 1: 0.6: 0.4. 1 part by mass of a composition dissolved in 1-butanol so that the titanium content in terms of conversion is 0.4 mol / kg, and the content of TiBa 0.6 Sr 0.4 O 3 fine particles having an average particle diameter of 50 nm Was mixed with 7 parts by mass of a 1-butanol dispersion having a concentration of 0.4 mol / kg to obtain a coating liquid composition (a-1). In addition, the metal molar ratio of titanium, barium, and strontium in the 2-ethylhexanoic acid titanium derivative, barium 2-ethylhexanoate, and strontium 2-ethylhexanoate obtained in the above production example was 1: 0.6: 0.4. A composition in which 1-butanol was dissolved so that titanium was 0.4 mol / kg in terms of metal was used as a coating liquid composition (b-1).
塗布液組成物(a−1)をSi/SiO2/Ti/Ptの積層基板にキャストし、500rpmで10秒でスピンコート法で塗布した後、120℃10分間の乾燥工程、400℃で15分の仮焼工程、700℃で30分の焼成工程による形成工程を行い、室温まで冷却した。これに塗布液組成物(b−1)をキャストし、500rpm10秒、2000rpm15秒でスピンコートし、120℃10分間の乾燥工程、400℃で15分の仮焼工程、700℃で30分の焼成工程による形成工程を行い、チタン酸バリウムストロンチウム膜を得た。これを実施例1とした。
また、塗布液組成物(a−1)をSi/SiO2/Ti/Ptの積層基板にキャストし、500rpmで10秒でスピンコート法で塗布した後、120℃10分間の乾燥工程、400℃で15分の仮焼工程、700℃で30分の焼成工程による形成工程を行い、チタン酸バリウムストロンチウム膜を得た。これを比較例1とした。
The coating liquid composition (a-1) was cast on a Si / SiO2 / Ti / Pt laminated substrate and applied by spin coating at 500 rpm for 10 seconds, followed by a drying process at 120 ° C. for 10 minutes, and at 400 ° C. for 15 minutes. The calcination step, a formation step by a baking step at 700 ° C. for 30 minutes, was performed and cooled to room temperature. The coating liquid composition (b-1) is cast on this, spin-coated at 500 rpm for 10 seconds and 2000 rpm for 15 seconds, a drying process at 120 ° C. for 10 minutes, a calcining process at 400 ° C. for 15 minutes, and a baking process at 700 ° C. for 30 minutes. The formation process by a process was performed and the barium strontium titanate film | membrane was obtained. This was designated Example 1.
Also, the coating liquid composition (a-1) was cast on a Si / SiO2 / Ti / Pt laminated substrate and applied by spin coating at 500 rpm for 10 seconds, followed by a drying step at 120 ° C. for 10 minutes at 400 ° C. The formation process by the calcination process for 15 minutes and the baking process for 30 minutes at 700 degreeC was performed, and the barium strontium titanate film | membrane was obtained. This was designated as Comparative Example 1.
得られた膜について、目視と光学顕微鏡による表面クラック評価、断面SEM像による膜厚測定、SEM像による膜表面の平滑性評価、X線回折による組成分析及び薄膜上部へPt電極をスパッタし、これを上部電極としてaixACCT TFA 1000(aixACCT Systems Gmbh)による比誘電率とリーク電流の測定を行った。結果を表1に示す。 About the obtained film, surface crack evaluation by visual observation and optical microscope, film thickness measurement by cross-sectional SEM image, smoothness evaluation of film surface by SEM image, composition analysis by X-ray diffraction and sputtering of Pt electrode on top of thin film, Was used as the upper electrode, and the relative dielectric constant and leakage current were measured by aixACCT TFA 1000 (aixACCT Systems Gmbh). The results are shown in Table 1.
上記表中の組成BSTはチタン酸バリウムストロンチウムであり、以下も同様である。 The composition BST in the above table is barium strontium titanate, and so on.
上記表1より、膜の最上層に塗布組成物(b−1)による塗布を施した実施例1が、平滑性及び電気特性も優れることが確認できた。 From Table 1 above, it was confirmed that Example 1 in which the uppermost layer of the film was coated with the coating composition (b-1) was also excellent in smoothness and electrical characteristics.
[実施例2、3]
平均粒子径50nmのTiBa0.6Sr0.4O3微粒子の含有量が0.8モル/kgの1−ブタノール分散液に、上記製造例で得た2−エチルヘキサン酸チタン誘導体、2−エチルヘキサン酸バリウムおよび2−エチルヘキサン酸ストロンチウムをモル比で1:0.6:0.4の割合でチタン含有量が1.0モル/kgとなるように加えた塗布液組成物(a−2)をSi/SiO2/Ti/Ptの積層基板にバーコータ(red:12μm規格)またはスピンコート(500rpm、10秒)による塗布後、120℃10分間の乾燥工程、400℃で15分の仮焼工程、700℃で30分の焼成工程を行い、室温まで冷却し、Pt層上にチタン酸バリウムストロンチウム膜を形成した。これに塗布液組成物(b−1)をキャストし、500rpm10秒、2000rpm15秒でスピンコートし、120℃10分間の乾燥工程、400℃で15分の仮焼工程、700℃で30分の焼成工程による形成工程を行いチタン酸バリウムストロンチウム膜を形成した。得られた膜について、上記実施例1と同様に表面クラック評価、膜厚測定、平滑性評価、組成分析を行った。結果を表2に示す。
[Examples 2 and 3]
A 2-ethylhexanoic acid titanium derivative obtained in the above production example was added to a 1-butanol dispersion having an average particle diameter of 50 nm of TiBa 0.6 Sr 0.4 O 3 fine particles of 0.8 mol / kg, 2- A coating liquid composition in which barium ethylhexanoate and strontium 2-ethylhexanoate were added at a molar ratio of 1: 0.6: 0.4 so that the titanium content was 1.0 mol / kg (a- After applying 2) to the Si / SiO2 / Ti / Pt laminated substrate by bar coater (red: 12 μm standard) or spin coating (500 rpm, 10 seconds), drying step at 120 ° C. for 10 minutes, calcining at 400 ° C. for 15 minutes The process, the baking process for 30 minutes at 700 degreeC, was cooled to room temperature, and the barium strontium titanate film | membrane was formed on Pt layer. The coating liquid composition (b-1) is cast on this, spin-coated at 500 rpm for 10 seconds and 2000 rpm for 15 seconds, a drying process at 120 ° C. for 10 minutes, a calcining process at 400 ° C. for 15 minutes, and a baking process at 700 ° C. for 30 minutes. The formation process by the process was performed to form a barium strontium titanate film. The obtained film was subjected to surface crack evaluation, film thickness measurement, smoothness evaluation, and composition analysis in the same manner as in Example 1. The results are shown in Table 2.
上記表2より、本発明の方法により、厚さ800〜1000nmオーダーの平滑性が良好なチタン酸バリウムストロンチウムを得ることができた。
From Table 2 above, barium strontium titanate having a smoothness of the order of 800 to 1000 nm was obtained by the method of the present invention.
Claims (6)
The method for producing a ceramic film according to any one of claims 1 to 5, wherein the produced ceramic film contains a Group 4 metal oxide film.
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