JP2008169408A - Silver plated terminals for connectors - Google Patents
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- JP2008169408A JP2008169408A JP2007001512A JP2007001512A JP2008169408A JP 2008169408 A JP2008169408 A JP 2008169408A JP 2007001512 A JP2007001512 A JP 2007001512A JP 2007001512 A JP2007001512 A JP 2007001512A JP 2008169408 A JP2008169408 A JP 2008169408A
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims description 98
- 229910052709 silver Inorganic materials 0.000 title claims description 98
- 239000004332 silver Substances 0.000 title claims description 98
- 239000010949 copper Substances 0.000 claims abstract description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052802 copper Inorganic materials 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 21
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 8
- 238000007747 plating Methods 0.000 claims description 102
- 239000013078 crystal Substances 0.000 claims description 35
- 238000009792 diffusion process Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 88
- 238000003780 insertion Methods 0.000 description 10
- 230000037431 insertion Effects 0.000 description 10
- 238000012360 testing method Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
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- Electroplating Methods And Accessories (AREA)
Abstract
Description
本発明は、コネクタに用いられる、表面に銀めっきが施された端子に関する。 The present invention relates to a terminal used for a connector and having a surface plated with silver.
従来、自動車の電気部品等を接続するコネクタ端子は、一般に、銅又は銅合金などの母材の表面に錫めっきなどのめっきが施されている電気接点用端子が用いられていた。ところで、ガソリンエンジンと電動機を併用するハイブリッドカーや、電気自動車等では高出力モーターが使用される。そして高出力モーターの配線や端子等は、通電電流が大きくなる。コネクタ端子に大電流が流れると、発熱も大きくなる。また、電流容量に合わせて端子も大きくなるため、挿入力が大きくなり、挿入時の端子表面へのダメージも大きくなる。 Conventionally, connector terminals for connecting automobile electrical components and the like have generally used electrical contact terminals in which the surface of a base material such as copper or copper alloy is plated with tin or the like. By the way, a high output motor is used in a hybrid car using a gasoline engine and an electric motor together, an electric vehicle, or the like. And the energizing current becomes large in the wiring and terminals of the high output motor. When a large current flows through the connector terminal, heat generation also increases. Further, since the terminal becomes larger in accordance with the current capacity, the insertion force is increased, and the damage to the terminal surface during insertion is also increased.
従来の錫めっき端子は、このような大電流で使用される場合には、耐熱性が不十分であり、挿抜が困難になると予想される。そこで、大電流が使用されるコネクタ端子として、錫めっきの代りに銀めっき端子を用いる試みがある。また電気接点用銀メッキ端子として、銀の結晶粒径を５μｍ以上としたものが公知である（例えば、特許文献１参照）。 When the conventional tin-plated terminal is used at such a large current, the heat resistance is insufficient, and it is expected that insertion / extraction becomes difficult. Therefore, there is an attempt to use a silver plated terminal instead of tin plating as a connector terminal that uses a large current. Also, silver plating terminals for electrical contacts are known in which the crystal grain size of silver is 5 μm or more (for example, see Patent Document 1).
銀めっきは貴金属であり、耐食性に優れ、融点も高いことから耐熱性のめっきとして、電力、重機などでは古くから利用されている。しかし、下地が銅の表面に銀メッキを施した場合、銅と合金化は生じないものの、上記特許文献１にも記載されているように、銀メッキ層の結晶粒界から銅成分が拡散し、銀メッキ層の表面の銅成分の濃度が高くなるという問題がある。端子表面の銅成分は酸化されやすい。銅成分が酸化すると、接触抵抗が大きくなる。端子表面の銅成分の濃度が高くなると、接触抵抗の増大を引き起こす。その結果、端子が大電流で使用された場合の発熱が大きくなってしまう等、電気的接続性能を低下させる虞がある。 Silver plating is a noble metal, has excellent corrosion resistance, and has a high melting point. Therefore, it has been used for a long time as a heat-resistant plating in electric power and heavy machinery. However, when silver plating is applied to the surface of copper, the copper component diffuses from the crystal grain boundary of the silver plating layer as described in Patent Document 1 although alloying with copper does not occur. There is a problem that the concentration of the copper component on the surface of the silver plating layer becomes high. The copper component on the terminal surface is easily oxidized. When the copper component is oxidized, the contact resistance increases. When the concentration of the copper component on the terminal surface is increased, the contact resistance is increased. As a result, there is a possibility that the electrical connection performance is deteriorated, for example, the heat generated when the terminal is used with a large current is increased.
これに対し上記特許文献１に記載されているように、銀めっき層の結晶粒を大きくすると、下地の銅成分の表面への拡散が防止できるものである。しかし、銀めっき層は、再結晶により結晶粒径が増大し易い。例えば２００〜３００℃程度の熱で、再結晶して結晶粒が大きくなってしまう。このように銀めっき層の結晶粒が増大すると、コネクタ端子同士が密着して、端子の挿抜が困難になる虞がある。また、銀めっき層の結晶粒が大きくなると、硬度が低くなることから、コネクタ端子として使用した場合に、端子同士の挿抜力が大きくなったり、摩耗が大きくなるといった問題がある。 On the other hand, as described in Patent Document 1, when the crystal grains of the silver plating layer are enlarged, diffusion of the underlying copper component to the surface can be prevented. However, the silver plating layer tends to increase in crystal grain size due to recrystallization. For example, with heat of about 200 to 300 ° C., recrystallization causes the crystal grains to become large. Thus, when the crystal grain of a silver plating layer increases, connector terminals may closely_contact | adhere and it may become difficult to insert / extract a terminal. Moreover, since the hardness will become low when the crystal grain of a silver plating layer becomes large, when it uses as a connector terminal, there exists a problem that the insertion / extraction force between terminals becomes large, or abrasion becomes large.
本発明の解決しようとする課題は、下地の銅の表面への拡散を抑制することが出来ると共に、端子の挿抜が良好で耐摩耗性に優れたコネクタ用銀めっき端子を提供することにある。 The problem to be solved by the present invention is to provide a silver-plated terminal for a connector that can suppress the diffusion of the underlying copper to the surface, and that has good terminal insertion and removal and excellent wear resistance.
上記課題を解決するために本発明のコネクタ用銀めっき端子は、銅又は銅合金からなる母材の表面が銀めっき層により被覆されているコネクタ用銀めっき端子において、銀めっき層が、下層側の第一の銀めっき層と、該第一の銀めっき層の上層側の第二の銀めっき層とからなり、第一の銀めっき層の結晶粒径が第二の銀めっき層の結晶粒径よりも大きいことを要旨とする。 In order to solve the above problems, the silver plated terminal for connectors of the present invention is a silver plated terminal for connectors in which the surface of a base material made of copper or a copper alloy is covered with a silver plated layer. The first silver plating layer and the second silver plating layer on the upper layer side of the first silver plating layer, and the crystal grain size of the first silver plating layer is the crystal grain of the second silver plating layer The gist is that it is larger than the diameter.
上記本発明コネクタ用銀めっき端子において、第一の銀めっき層の結晶粒径が平均粒径で２μｍ以上になるように構成したり、第一の銀めっき層の厚さが４μｍ以上になるように構成したり、第二の銀めっき層の厚さが２μｍ以上になるように構成したり、銀めっき層の全厚さが６μｍ以上になるように構成することができる。 In the above-described silver-plated terminal for a connector of the present invention, the first silver-plated layer has a mean grain size of 2 μm or more, or the first silver-plated layer has a thickness of 4 μm or more. It can be configured such that the thickness of the second silver plating layer is 2 μm or more, or the total thickness of the silver plating layer is 6 μm or more.
上記本発明のコネクタ用銀めっき端子によれば、銀めっき層を結晶粒径の異なる第一の銀めっき層と第二の銀めっき層とから構成し、下層側の第一の銀めっき層の結晶粒径が、表面側の第二の銀めっき層の結晶粒径よりも大きく構成したことにより、下層側の第一の銀めっき層の結晶粒径は、第一の銀めっき層よりも大きいので、下地の銅が表面に拡散するのを良好に抑制することが出来る。更に表面側の第二の銀めっき層は、下層側の第一の銀めっき層よりも結晶粒径が小さいので、硬度が高くなり端子の挿抜性が良好で耐摩耗性に優れている。このように本発明によれば、従来は困難であった、大電流で使用された際に接触抵抗の低い優れた電気的特性と、挿抜性や耐摩耗性との両方を共に満足するコネクタ用銀めっき端子が得られる。 According to the silver plating terminal for a connector of the present invention, the silver plating layer is composed of a first silver plating layer and a second silver plating layer having different crystal grain sizes, and the first silver plating layer on the lower layer side Since the crystal grain size is larger than the crystal grain size of the second silver plating layer on the surface side, the crystal grain size of the first silver plating layer on the lower layer side is larger than that of the first silver plating layer Therefore, it is possible to satisfactorily suppress the diffusion of the underlying copper to the surface. Furthermore, since the second silver plating layer on the surface side has a crystal grain size smaller than that of the first silver plating layer on the lower layer side, the hardness is increased, the terminal insertion / removability is good, and the wear resistance is excellent. As described above, according to the present invention, for connectors that satisfy both of excellent electrical characteristics with low contact resistance when used at a large current, insertion / removability and wear resistance, which has been difficult in the past. A silver-plated terminal is obtained.
以下に、本発明の実施形態について、図面を参照して詳細に説明する。図１は本発明の銀めっき端子の表面の断面図である。本発明のコネクタ用銀めっき端子（以下、単に銀めっき端子ということもある）１は、銅又は銅合金からなる母材２の表面が、銀めっき層３により被覆されているものである。そして前記銀めっき層２は、母材２側となる下層側の第一の銀めっき層３１と、該第一の銀めっき層３１の上に形成され、銀めっき端子１の表面に露出する上層側の第二の銀めっき層３２とから構成される。 Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a cross-sectional view of the surface of a silver-plated terminal of the present invention. A silver-plated terminal for connectors (hereinafter sometimes simply referred to as a silver-plated terminal) 1 of the present invention is such that the surface of a base material 2 made of copper or a copper alloy is covered with a silver-plated layer 3. And the said silver plating layer 2 is formed on the lower layer side 1st silver plating layer 31 used as the base material 2 side, and this 1st silver plating layer 31, and the upper layer exposed on the surface of the silver plating terminal 1 And the second silver plating layer 32 on the side.
母材２は、コネクタ用端子の基材として用いられるものであり、銅又は銅合金等から形成されている。また母材２は、銅又は銅合金以外の材料（例えば鋼、アルミニウム等）の表面を銅又は銅合金で被覆したものでも良い。 The base material 2 is used as a base material for a connector terminal, and is formed of copper, a copper alloy, or the like. Further, the base material 2 may be one in which the surface of a material other than copper or a copper alloy (for example, steel, aluminum, etc.) is coated with copper or a copper alloy.
第一の銀めっき層３１は、下層の母材２から銅が拡散するのを抑制するための層であり、結晶粒径が第二の銀めっき層３２の結晶粒径よりも大きく形成されている。銀めっき層において結晶粒径が大きい程、下地の銅が表面の銀めっき層に拡散するのを防止する効果が大きくなる。第一の銀めっき層３１の結晶粒径は、平均粒径で２μｍ以上であるのが好ましい。また第一の銀めっき層３１の厚さＡは、厚くなると下地の銅の拡散防止効果が大きくなると共に、銀めっき層の表面から酸素が該層の内部に浸透し難くなり、下地である母材２の銅の酸化防止効果が大きくなる。このような点から第一の銀めっき層３１の厚さＡは３μｍ程度であればよいが、４μｍ以上に形成することが好ましい。第一の銀めっき層３１の厚さＡの上限は特に限定されず、銀めっき端子が使用される環境や用途等に応じて適宜設定することができる。 The first silver plating layer 31 is a layer for suppressing copper from diffusing from the lower base material 2, and has a crystal grain size larger than the crystal grain size of the second silver plating layer 32. Yes. The larger the crystal grain size in the silver plating layer, the greater the effect of preventing the underlying copper from diffusing into the surface silver plating layer. The crystal grain size of the first silver plating layer 31 is preferably 2 μm or more in average grain size. Further, when the thickness A of the first silver plating layer 31 is increased, the effect of preventing the diffusion of copper in the base is increased, and oxygen hardly penetrates from the surface of the silver plating layer into the inside of the layer. The effect of preventing oxidation of copper of the material 2 is increased. From such a point, the thickness A of the first silver plating layer 31 may be about 3 μm, but is preferably formed to 4 μm or more. The upper limit of the thickness A of the first silver plating layer 31 is not particularly limited, and can be set as appropriate according to the environment, use, etc. in which the silver plating terminal is used.
第二の銀めっき層３２は、銀めっき端子１の表面に存在し、他のコネクタ端子と直接接触する部分となる。銀めっき端子１は、第二の銀めっき層３２が硬くなる程、コネクタ端子１を他の端子と挿抜する際にし易くなり、また挿抜による摩耗防止効果が大きくなる。銀めっき層の硬さと結晶粒径の関係は、下記の（１）式のホールペッチの式で表される。ホール・ペッチの式に示すように、銀めっき層の硬さ（降伏強度）は、結晶粒径の大きさと反比例して、結晶粒径が小さくなるほど大きくなる。第二の銀めっき層３２の結晶粒径は、第一の銀めっき層３１の結晶粒径よりも小さくなるように構成されているので、第二の銀めっき層３２の硬度は、第一の銀めっき層３１の硬度よりも大きくなり、挿抜性や耐摩耗性が向上する。 The 2nd silver plating layer 32 exists in the surface of the silver plating terminal 1, and becomes a part which contacts another connector terminal directly. As the second silver plating layer 32 becomes harder, the silver plated terminal 1 becomes easier when the connector terminal 1 is inserted into and removed from other terminals, and the effect of preventing wear due to insertion and removal increases. The relationship between the hardness of the silver plating layer and the crystal grain size is expressed by the following Hall Petch equation (1). As shown in the Hall-Petch equation, the hardness (yield strength) of the silver plating layer is inversely proportional to the crystal grain size, and increases as the crystal grain size decreases. Since the crystal grain size of the second silver plating layer 32 is configured to be smaller than the crystal grain size of the first silver plating layer 31, the hardness of the second silver plating layer 32 is the first It becomes larger than the hardness of the silver plating layer 31, and the insertion / extraction property and wear resistance are improved.
［ホール・ペッチの式］
σ＝σ０＋ｋｄ１／２ ・・・・（１）
上記式において、σは降伏強度、σ０は実験より求める値、ｋは実験より求める係数、ｄは結晶粒径である。
[Hall Petch formula]
σ = σ 0 + kd 1/2 (1)
In the above equation, σ is the yield strength, σ 0 is a value obtained by experiment, k is a coefficient obtained by experiment, and d is the crystal grain size.
また第二の銀めっき層３２の厚さＢは、少なくとも１μｍ以上に形成されていればよいが、確実に挿抜性及び耐摩耗性等を得るために、２μｍ以上に形成することが好ましい。第二の銀めっき層３２の厚さＢの上限は特に限定されず、端子の使用される環境や用途等に応じて適宜設定することができる。 In addition, the thickness B of the second silver plating layer 32 may be at least 1 μm or more, but it is preferably formed to be 2 μm or more in order to ensure insertion / removability and wear resistance. The upper limit of the thickness B of the second silver plating layer 32 is not particularly limited, and can be appropriately set according to the environment in which the terminal is used, the application, and the like.
銀めっき層３の厚さは、第一の銀めっき層３１及び第二の銀めっき層３２を合わせた全厚さＣが５μｍ以上になるように形成すればよいが、より確実に銅の拡散を防止するという点から、６μｍ以上に形成することが好ましい。 The thickness of the silver plating layer 3 may be formed so that the total thickness C of the first silver plating layer 31 and the second silver plating layer 32 is 5 μm or more. It is preferable to form it 6 micrometers or more from the point of preventing.
本発明の銀めっき端子１は、例えば、母材２に対して二段階で銀めっきを行うことにより、第一の銀めっき層３１と第二の銀めっき層３２を段階的に形成することで、製造することができる。銀めっき層の結晶粒径を変化させるには、例えば、めっき液にセレンやアンチモン、或いは他の添加剤を加えることで、結晶粒径の小さい銀めっき層が得られる。また図２は銀めっき層の硬さとめっきの際の電流密度の関係を示すグラフである。図２に示すように、めっきの際の電流密度を変化させることでも、銀めっき層の結晶粒径を変化させることができる。このように、銀めっき層の結晶粒径は、めっき液の組成を変えることや、めっき処理の電流密度を変えることにより調節可能である。 For example, the silver-plated terminal 1 of the present invention forms the first silver-plated layer 31 and the second silver-plated layer 32 stepwise by performing silver plating on the base material 2 in two steps. Can be manufactured. In order to change the crystal grain size of the silver plating layer, for example, a selenium, antimony, or other additive is added to the plating solution to obtain a silver plating layer having a small crystal grain size. FIG. 2 is a graph showing the relationship between the hardness of the silver plating layer and the current density during plating. As shown in FIG. 2, the crystal grain size of the silver plating layer can also be changed by changing the current density during plating. Thus, the crystal grain size of the silver plating layer can be adjusted by changing the composition of the plating solution or changing the current density of the plating process.
また銀めっき層の結晶粒径を変化させる他の手段としては、電気めっき等により銀めっき層を一層のみ形成した後、該銀めっき層の表層を機械的に加工することで加工硬化させて、表層の結晶粒径を小さくして第二の銀めっき層３２を形成することもできる。 As another means for changing the crystal grain size of the silver plating layer, after forming only one silver plating layer by electroplating or the like, the surface layer of the silver plating layer is mechanically processed and cured, The second silver plating layer 32 can also be formed by reducing the crystal grain size of the surface layer.
図３（ａ）、（ｂ）は、銅（Ｃｕ）母材の表面に厚さ７μｍの銀（Ａｇ）めっき層を設けた試験片の深さ方向のＡｇ濃度及びＣｕ濃度を示すグラフであり（ａ）は初期を示し、（ｂ）は耐久試験後を示すものである。Ａｇめっき層の厚さが７μｍの場合は、図３（ｂ）に示すように、耐久試験後であってもＣｕの拡散は見られない。図４（ａ）、（ｂ）は、Ａｇめっき層の厚さが２μｍ未満とした場合のグラフである。同図（ｂ）に示すように、Ａｇめっき層の厚さが２μｍ未満の場合は、耐久試験後にＣｕの拡散が見られる。 FIGS. 3A and 3B are graphs showing the Ag concentration and Cu concentration in the depth direction of a test piece in which a silver (Ag) plating layer having a thickness of 7 μm is provided on the surface of a copper (Cu) base material. (A) shows the initial stage, and (b) shows after the endurance test. When the thickness of the Ag plating layer is 7 μm, as shown in FIG. 3B, no diffusion of Cu is observed even after the durability test. 4A and 4B are graphs when the thickness of the Ag plating layer is less than 2 μm. As shown in FIG. 4B, when the thickness of the Ag plating layer is less than 2 μm, Cu diffusion is observed after the durability test.
図５（ａ）〜（ｃ）は、Ｃｕ母材の表面に、結晶粒の平均粒径が２μｍの銀めっき層を設けた試験片を大気中２００℃、１２０時間処理し、試験片の表面を観察した電子顕微鏡写真である。銀めっき層の厚さは、（ａ）が４．９１〜４．９８μm、（ｂ）が２．４１〜２．６９μｍ、（ｃ）が０．４０〜０．４４μｍである。（ｃ）は表面に多数のＣｕが露出しているが、（ｂ）は表面にＣｕがほとんど見られず、（ａ）は表面にＣｕは全く見られない。この結果は、銀めっき層の結晶粒径が２μｍの場合、銀めっき層の厚さが３μｍ程度以上であれば、母材のＣｕの拡散を防止出来ることを示すものである。 5 (a) to 5 (c) show a test piece surface in which a test piece provided with a silver plating layer having an average grain size of 2 μm on the surface of a Cu base material is treated at 200 ° C. for 120 hours in the atmosphere. It is the electron micrograph which observed this. The thickness of the silver plating layer is 4.91 to 4.98 μm for (a), 2.41 to 2.69 μm for (b), and 0.40 to 0.44 μm for (c). In (c), a large number of Cu is exposed on the surface, but (b) shows almost no Cu on the surface and (a) shows no Cu on the surface. This result shows that when the crystal grain size of the silver plating layer is 2 μm, the diffusion of Cu as a base material can be prevented if the thickness of the silver plating layer is about 3 μm or more.
なお本発明のコネクタ用銀めっき端子は、オス型端子とメス型端子が嵌合するタイプのコネクタ、機器用コネクタ、ボルト締め端子（バッテリー、アース）等のコネクタの端子全般に利用することができる。 The silver-plated terminal for a connector of the present invention can be used for all types of connector terminals such as a connector for fitting a male terminal and a female terminal, a connector for equipment, and a bolted terminal (battery, ground). .
本発明の銀めっき端子は、大電流で使用されるハイブリッドカーや電気自動車等に実装される電気部品に用いられるコネクタ端子として最適に用いることができる。 The silver-plated terminal of the present invention can be optimally used as a connector terminal used for an electrical component mounted on a hybrid car, an electric vehicle or the like used with a large current.
１ コネクタ用銀めっき端子
２ 母材
３ 銀めっき層
３１ 第一の銀めっき層
３２ 第二の銀めっき層
Ａ 第一の銀めっき層の厚さ
Ｂ 第二の銀めっき層の厚さ
Ｃ 銀めっき層の全厚さ
DESCRIPTION OF SYMBOLS 1 Silver plating terminal 2 for connectors Base material 3 Silver plating layer 31 First silver plating layer 32 Second silver plating layer A Thickness B of first silver plating layer Thickness C of second silver plating layer Silver plating Total thickness of the layer
Claims (5)
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| JP2007001512A JP2008169408A (en) | 2007-01-09 | 2007-01-09 | Silver plated terminals for connectors |
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| JP2008169408A true JP2008169408A (en) | 2008-07-24 |
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