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JP2008168304A - Laser cutting method - Google Patents

Laser cutting method Download PDF

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JP2008168304A
JP2008168304A JP2007001289A JP2007001289A JP2008168304A JP 2008168304 A JP2008168304 A JP 2008168304A JP 2007001289 A JP2007001289 A JP 2007001289A JP 2007001289 A JP2007001289 A JP 2007001289A JP 2008168304 A JP2008168304 A JP 2008168304A
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substrate
laser
cleaving
workpiece
workpiece substrate
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Shozo Odera
昭三 大寺
Noriyasu Kawamuki
徳康 川向
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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  • Laser Beam Processing (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a laser cutting method by which the shape of a chip-size substrate is not distorted even when forming recessed parts being starting points on a strip-shaped slave substrate to be worked after primary cutting. <P>SOLUTION: By preparing a master substrate 1 to be worked composed of a brittle material such as ceramics and manufacturing the strip-shaped slave substrate 1a to be worked by performing the primary cutting of the master substrate 1 to be worked along a broken line Y being a cutting predetermining part and forming holes 3 along a cutting line K, the strip-shaped slave substrate 1a to be worked is cut by taking the recessed part 3a as the starting point and the chip-sized substrate 1b is manufactured. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本願発明は、ガラス、セラミックあるいは半導体材料などの脆性材料からなる被加工基板にレーザを照射させることにより生じる亀裂を用いて、被加工基板を割断するレーザ割断方法に関する。   The present invention relates to a laser cleaving method for cleaving a substrate to be processed using a crack generated by irradiating a laser to a workpiece substrate made of a brittle material such as glass, ceramic, or a semiconductor material.

セラミック等の脆性材料からなる被加工基板を切断する方法として、一般に、円板状の回転刃による切断やレーザによる溶断が知られている。   As a method of cutting a workpiece substrate made of a brittle material such as ceramic, generally, cutting with a disk-shaped rotary blade or fusing with a laser is known.

しかしながら、これらの方法では、回転刃による切断やレーザによる溶断等で切断しているため、被加工基板にはこれらの加工で削除される部分の材料を切り代として必要とするものであり、それだけ材料コストがかかるという問題があった。また、切断のための部分を完全に削除するためには時間がかかるため、加工コストがかかるという問題や、機械的歪みの不均一や熱応力の不均一により、切断予定部分以外の部分で割れや欠けが生じるという問題もあった。   However, in these methods, since cutting is performed by cutting with a rotary blade or fusing with a laser, the substrate to be processed requires a part of material to be deleted by these processing as a cutting allowance. There was a problem that the material cost was high. In addition, since it takes time to completely remove the part to be cut, there is a problem that the processing cost is high, and mechanical cracks and non-uniform thermal stress cause cracks in parts other than the part to be cut. There was also a problem that chipping occurred.

そこで、このような問題を解決するために、レーザ照射による熱応力を利用して脆性材料からなる被加工基板を割断するレーザ割断方法が提案されている。このようなレーザ割断方法には、例えば上述したレーザによる溶断に比べると、加工に必要なエネルギーが小さくて済み、材料の削除も少ないため、材料コストや加工コストを少なくすることができるという利点がある。   Therefore, in order to solve such a problem, a laser cleaving method for cleaving a substrate to be processed made of a brittle material using thermal stress caused by laser irradiation has been proposed. Such a laser cleaving method has the advantage that, compared with the above-described fusing by laser, for example, less energy is required for processing and less material is deleted, so that material costs and processing costs can be reduced. is there.

また、一般に、セラミック基板等を母基板から所望の大きさのチップサイズに割断する場合、被加工母基板を割断予定部分で割断して短冊状の被加工子基板を得る一次割断工程の後、短冊状の被加工子基板を短辺方向に割断してチップサイズのセラミック基板を得る二次割断工程を行うという手順で行う。   Moreover, generally, when a ceramic substrate or the like is cleaved from a mother substrate into a chip size of a desired size, after a primary cleaving step of obtaining a strip-shaped workpiece substrate by cleaving the workpiece mother substrate at a portion to be cleaved, The strip-shaped workpiece substrate is cleaved in the short side direction to perform a secondary cleaving step of obtaining a chip-sized ceramic substrate.

このようなレーザ割断方法においては、亀裂の起点位置のズレや終点での応力の開放などによる位置ズレが生じるため、割断予定部分の交差点に凹部を形成することで、割断精度を向上させることが行われている。   In such a laser cleaving method, a deviation of the starting position of the crack or a deviation of the stress at the end point occurs, so that the cleaving accuracy can be improved by forming a recess at the intersection of the planned cleaving part. Has been done.

このようなレーザ割断方法の一つが特許文献1には記載されている。以下、特許文献1のレーザ割断方法について図4を用いて説明する。   One such laser cleaving method is described in Patent Document 1. Hereinafter, the laser cleaving method of Patent Document 1 will be described with reference to FIG.

まず、図4(A)に示すように、割断予定部分である破線Xと破線Yの交差点に穴13を形成した被加工母基板11を用意する。穴13は前加工することなく、予め被加工母基板11の積層製造時に形成されたものである。   First, as shown in FIG. 4A, a workpiece substrate 11 is prepared in which a hole 13 is formed at the intersection of a broken line X and a broken line Y, which is a part to be cleaved. The holes 13 are formed in advance when the processed mother board 11 is laminated without being pre-processed.

次に、図4(B)に示すように、破線Yに沿ってレーザ照射装置2のレーザの照射位置を移動させて、レーザの照射に亀裂を追従させて進展させ、短冊状の被加工子基板11aを作製する。この後、破線Xに沿ってレーザ照射装置2のレーザの照射位置を移動させて、同様に亀裂を進展させて個々のチップサイズのセラミック基板を作製している。
特開平10−263865号公報
Next, as shown in FIG. 4 (B), the laser irradiation position of the laser irradiation apparatus 2 is moved along the broken line Y so that the cracks follow the laser irradiation and progress, and a strip-shaped workpiece. The substrate 11a is produced. Thereafter, the laser irradiation position of the laser irradiation device 2 is moved along the broken line X, and cracks are similarly developed to produce individual chip size ceramic substrates.
Japanese Patent Laid-Open No. 10-263865

ところで、特許文献1においては、予め穴を形成したシートを積層して、穴13を有するセラミック等の脆性材料からなる生の被加工母基板を製造している。すなわち、穴がある状態で生の被加工母基板は焼成されることになる。この場合、図5に示すように、焼成時のセラミックの収縮等により穴13の縁に無数のマイクロクラックCが生じる。穴13を有する被加工母基板11にレーザを照射する際に、このマイクロクラックCが起点となることで亀裂が生じる。基本的には、レーザの照射位置LBを移動させた方向に沿うマイクロクラックCが進展して亀裂となり、この亀裂が進展していくこととなる。   By the way, in patent document 1, the sheet | seat in which the hole was formed previously is laminated | stacked, and the raw | molding mother board | substrate which consists of brittle materials, such as a ceramic which has the hole 13, is manufactured. In other words, the raw substrate to be processed is fired in a state where there is a hole. In this case, as shown in FIG. 5, countless microcracks C are generated at the edge of the hole 13 due to ceramic shrinkage or the like during firing. When the mother substrate 11 having the holes 13 is irradiated with a laser, the microcracks C are used as starting points to cause cracks. Basically, the microcrack C along the direction in which the laser irradiation position LB is moved develops into a crack, and this crack progresses.

ここで、図4(B)のように、穴13を形成した後、被加工母基板11を縦方向に分割する場合に破線Yに沿ってレーザを走査した時、図5における縦波線Yに沿うマイクロクラックC1が最も進展することになる。この時、縦波線Yに沿うマイクロクラックC1程ではないが、その他の方向のマイクロクラックもレーザ照射により進展する。   Here, as shown in FIG. 4B, when the laser beam is scanned along the broken line Y when the mother substrate 11 is divided in the vertical direction after the hole 13 is formed, the vertical wave line Y in FIG. The microcrack C1 along is most advanced. At this time, although not as small as the microcrack C1 along the longitudinal wave line Y, microcracks in other directions also develop by laser irradiation.

その後、破線Xに沿って割断する場合に、破線Xに沿ってレーザを走査することにより横波線Xに沿うマイクロクラックC2を進展させて亀裂を生じさせるが、この際に、前工程である破線Yに沿って割断した時に進展したC1、C2以外の他の方向のマイクロクラックがさらに進展することで、不所望な部分を起点として亀裂が発生するという問題が生じる。その結果、最終形状であるチップサイズの基板が歪んだ形状になり、不良品が生じるという問題が生じていた。   Thereafter, when cleaving along the broken line X, scanning the laser along the broken line X causes the microcracks C2 along the transverse wave line X to develop and cause cracks. When microcracks in directions other than C1 and C2 that have developed when cleaved along Y further develop, there arises a problem that cracks are generated starting from undesired portions. As a result, there has been a problem that a chip-sized substrate, which is the final shape, has a distorted shape, resulting in a defective product.

この原因となるマイクロクラックは、特許文献1のように生の状態で穴を形成しておく場合に限らず、焼成後の被加工母基板にレーザや機械的加工治具等で穴を形成する場合でも、必ず形成されるものである。また、マイクロクラックは、短冊状の被加工子基板をチップサイズの基板に割断する際の起点を形成するために必要なものでもある。   The micro cracks that cause this are not limited to the case where the holes are formed in the raw state as in Patent Document 1, but the holes are formed in the mother substrate after firing with a laser or a mechanical processing jig. Even if it is always formed. Microcracks are also necessary for forming a starting point for cleaving a strip-shaped workpiece substrate into a chip-sized substrate.

本願発明は以上のような点に鑑みてなされたものであって、短冊状の被加工子基板をチップサイズに割断する際に、起点となる穴を有しつつ不所望な部分からの亀裂の発生を防止することができるレーザ割断方法を提供するものである。   The present invention has been made in view of the above points, and when a strip-shaped workpiece substrate is cleaved into chip sizes, cracks from undesired portions having holes as starting points are provided. The present invention provides a laser cleaving method capable of preventing the occurrence.

すなわち、本願発明の請求項1に係るレーザ割断方法は、脆性材料からなる被加工母基板を割断して短冊状の被加工子基板を形成する工程と、前記被加工子基板の長辺に、前記被加工子基板を割断する起点となる凹部を形成する工程と、前記凹部付近にレーザを照射することにより前記被加工子基板を局部的に加熱し、その熱応力によって前記被加工子基板の凹部に亀裂を生じさせる工程と、レーザ照射により前記亀裂を進展させて前記短冊状の被加工子基板を割断する工程とを備えることを特徴とするものである。   That is, the laser cleaving method according to claim 1 of the present invention includes a step of cleaving a workpiece base substrate made of a brittle material to form a strip-shaped workpiece substrate, and a long side of the workpiece substrate, Forming a recess serving as a starting point for cleaving the workpiece substrate, and locally heating the workpiece substrate by irradiating a laser near the recess, and the thermal stress of the workpiece substrate The method includes a step of generating a crack in the concave portion and a step of cleaving the strip-shaped workpiece substrate by causing the crack to propagate by laser irradiation.

また、本願発明の請求項2に係るレーザ割断方法は、前記被加工子基板を形成する工程後、前記被加工子基板を割断した状態で前記被加工母基板の外形状を保ったまま、前記被加工子基板を割断する起点となる凹部を形成することを特徴とするものである。   Further, in the laser cleaving method according to claim 2 of the present invention, after the step of forming the workpiece substrate, the outer shape of the workpiece mother substrate is maintained while the workpiece substrate is cleaved. A recess serving as a starting point for cleaving the workpiece substrate is formed.

さらに、本願発明の請求項3に係るレーザ割断方法は、前記被加工子基板を割断する起点となる凹部を形成する工程において、前記被加工子基板の対向する二つの長辺の両側に凹部を形成することを特徴とするものである。   Furthermore, in the laser cleaving method according to claim 3 of the present invention, in the step of forming a recess serving as a starting point for cleaving the workpiece substrate, recesses are formed on both sides of two opposing long sides of the workpiece substrate. It is characterized by forming.

また、本願発明の請求項4に係るレーザ割断方法は、前記被加工子基板の割断工程において、前記亀裂の進展方向にレーザを走査して前記被加工子基板の幅全体を走査し終わった後、前記亀裂の進展方向の逆方向へレーザを走査することを特徴とするものである。   Further, in the laser cleaving method according to claim 4 of the present invention, in the cleaving process of the workpiece substrate, after scanning the entire width of the workpiece substrate by scanning the laser in the crack propagation direction. The laser is scanned in the direction opposite to the crack propagation direction.

本願発明のレーザ割断方法は、被加工母基板を被加工子基板に割断した後に割断起点となる凹部を形成している。これにより、被加工母基板を被加工子基板に割断する際には凹部が存在しておらず、マイクロクラックも存在しないため、不所望な方向のマイクロクラックが進展することがない。したがって、被加工子基板をチップサイズに割断する際に、不所望な方向に亀裂が進展することを防止することができ、所望の形状の基板を得ることができる。   In the laser cleaving method of the present invention, a crevice serving as a cleaving starting point is formed after cleaving a workpiece substrate to a workpiece substrate. As a result, when the workpiece substrate is cleaved into the workpiece substrate, there are no recesses and no microcracks, so that microcracks in undesired directions do not develop. Therefore, when the workpiece substrate is cleaved into chip sizes, it is possible to prevent cracks from progressing in an undesired direction, and a substrate having a desired shape can be obtained.

なお、被加工母基板を被加工子基板に割断する際には、被加工母基板端の部分で起点のズレはあるものの、それ以外の部分ではレーザ照射位置の移動に沿って亀裂が進展するため、被加工母基板全体で見た場合、起点部分を除いては精度よく加工されることになるため、大きな問題は生じない。   When the workpiece substrate is cleaved into the workpiece substrate, although there is a deviation of the starting point at the edge of the workpiece substrate, cracks progress along the movement of the laser irradiation position in the other portions. For this reason, when viewed from the whole processed mother board, since it is processed with high accuracy except for the starting portion, no major problem occurs.

また、本願発明の請求項2に係るレーザ割断方法は、被加工子基板を形成する工程後、前記被加工子基板を割断した状態で被加工母基板の外形状を保ったまま、被加工子基板を割断する起点となる凹部を形成している。これにより、凹部の両側の被加工子基板に同時に凹部を形成することができるので、効率的に加工することができる。また、被加工母基板の外形状を保ったまま、凹部の加工を行っているので、凹部の形成位置が明確であり、精度よく凹部を形成することができる。   Further, in the laser cleaving method according to claim 2 of the present invention, after the step of forming the workpiece substrate, the workpiece is processed while maintaining the outer shape of the workpiece mother substrate in a state in which the workpiece substrate is cleaved. A recess serving as a starting point for cleaving the substrate is formed. Thereby, since a recessed part can be simultaneously formed in the to-be-processed substrate on the both sides of a recessed part, it can process efficiently. In addition, since the recess is processed while maintaining the outer shape of the workpiece mother substrate, the position of the recess is clear and the recess can be formed with high accuracy.

また、本願発明の請求項3に係るレーザ割断方法は、前記被加工子基板を割断する起点となる凹部を形成する工程において、前記被加工子基板の対向する二つの長辺の両側に凹部を形成している。これにより、被加工子基板を割断する二次割断工程時、両側の凹部のマイクロクラックを起点として進展した亀裂がつながりやすく、割断しやすいため、加工精度を向上させることができる。   Further, in the laser cleaving method according to claim 3 of the present invention, in the step of forming a recess serving as a starting point for cleaving the workpiece substrate, recesses are formed on both sides of two opposing long sides of the workpiece substrate. Forming. Thereby, at the time of the secondary cleaving process which cleaves a to-be-processed substrate, since the crack which started from the microcrack of the recessed part of both sides is easy to be connected and it is easy to cleave, processing accuracy can be improved.

また、本願発明の請求項4に係るレーザ割断方法は、前記被加工子基板の割断工程において、前記亀裂の進展方向にレーザを走査して前記被加工子基板の幅全体を走査し終わった後、前記亀裂の進展方向の逆方向へレーザを走査している。これにより、被加工子基板を割断する二次割断工程時、最初にレーザを走査した終点側付近の亀裂が、逆方向へレーザを走査した際に進展することで、完全にチップサイズの基板に割断することができる。   Further, in the laser cleaving method according to claim 4 of the present invention, in the cleaving process of the workpiece substrate, after scanning the entire width of the workpiece substrate by scanning the laser in the crack propagation direction. The laser is scanned in the direction opposite to the crack propagation direction. As a result, in the secondary cleaving step of cleaving the workpiece substrate, the crack near the end point side where the laser was first scanned propagates when the laser is scanned in the reverse direction, so that the chip size substrate is completely formed. Can be cleaved.

以下、本願発明の第1の実施形態を図面に基づいて説明する。図1は被加工母基板1をチップサイズの基板1bに割断する各工程を示す概略説明図である。   Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic explanatory view showing each step of cleaving the workpiece substrate 1 into chip-sized substrates 1b.

まず、図1(A)に示すように、セラミック等の脆性材料からなる被加工母基板1を用意し、被加工母基板1の割断予定部分である破線Yに沿ってレーザ照射装置2のレーザの照射位置を移動させる。このレーザの走査により亀裂を進展させて被加工母基板1を一次割断することにより、短冊状の被加工子基板1aを作製する。この被加工母基板の脆性材料としては、ガラス、アルミナセラミック、シリコン、リチウムタンタレイト等の単結晶、低融点ガラス焼成セラミック、石英、半導体材料等が挙げられる。   First, as shown in FIG. 1A, a workpiece mother substrate 1 made of a brittle material such as ceramic is prepared, and the laser of the laser irradiation apparatus 2 is cut along a broken line Y that is a portion to be cut of the workpiece mother substrate 1. Move the irradiation position. A strip-shaped workpiece substrate 1a is produced by causing cracks to propagate by this laser scanning and primarily cleaving the workpiece substrate 1. Examples of the brittle material of the mother substrate to be processed include single crystals such as glass, alumina ceramic, silicon, and lithium tantalate, low-melting glass fired ceramic, quartz, and semiconductor materials.

なお、一次割断工程については、レーザ割断以外の、例えば機械的切削工具を用いて割断してもよいが、一次割断工程においてレーザ割断を用いた場合、この後のレーザによる穴開けを、レーザの出力を穴が開くように強い条件に変更することで、同じレーザー加工装置で連続して加工することが可能となるため、一次割断工程においてレーザ割断を用いることが好ましい。   The primary cleaving step may be cleaved using, for example, a mechanical cutting tool other than laser cleaving. However, when laser cleaving is used in the primary cleaving step, the subsequent laser drilling is performed using laser cutting. By changing the output to a strong condition so as to open a hole, it becomes possible to perform continuous processing with the same laser processing apparatus. Therefore, it is preferable to use laser cleaving in the primary cleaving step.

次に、図1(B)に示すように、複数の短冊状の被加工子基板1aをレーザ割断した被加工母基板1の外形状を保ったまま、破線Yで割断された割断線Kに対応して所定間隔で穴3を形成する。この穴3の間隔は最終的なチップ状のセラミック基板のチップサイズに対応している。穴3を割断線K上に形成することで、穴3は割断線Kで分けられた二つの被加工子基板1aの両方にかけて形成されることになる。そのため、位置精度よく効率的に穴3を形成することができる。なお、レーザ光としては加工する基板の材料により適宜選択することになるが、CO2レーザやYAGレーザ等を用いることができる。また、一次割断工程に連続して同じレーザー加工装置を用いて穴開け加工する場合には、レーザによる一次割断工程ではスポット径を拡大して被加工母基板にレーザを照射し、レーザによる穴開けの工程では焦点をあわせて加工する。   Next, as shown in FIG. 1 (B), the cutting line K cut by the broken line Y is maintained while maintaining the outer shape of the processed mother board 1 obtained by laser cutting the plurality of strip-shaped workpiece substrates 1a. Correspondingly, the holes 3 are formed at predetermined intervals. The interval between the holes 3 corresponds to the chip size of the final chip-shaped ceramic substrate. By forming the hole 3 on the breaking line K, the hole 3 is formed over both of the two workpiece substrates 1a divided by the breaking line K. Therefore, the hole 3 can be efficiently formed with high positional accuracy. The laser beam is appropriately selected depending on the material of the substrate to be processed, but a CO2 laser, a YAG laser, or the like can be used. In addition, when drilling using the same laser processing equipment in succession to the primary cleaving process, in the primary cleaving process by laser, the spot diameter is enlarged and the target substrate is irradiated with laser, and the laser drilling is performed. In this process, the focus is adjusted.

また、図1(C)に示すように、短冊状の被加工子基板1aを個々に見ると、被加工母基板1の外形状を保った状態では穴3であった部分が分割されて、被加工子基板1aの長辺において平面方向に凹んだ半円状の凹部3aが形成されている。   Further, as shown in FIG. 1 (C), when the strip-shaped workpiece substrate 1a is viewed individually, the portion that was the hole 3 in the state where the outer shape of the workpiece substrate 1 is maintained is divided. A semicircular recess 3a that is recessed in the plane direction is formed on the long side of the workpiece substrate 1a.

この半円状の凹部3aを有する短冊状の被加工子基板1aの割断予定部分である破線Xに沿って白矢印の方向にレーザ照射装置2のレーザの照射位置を移動させる。このレーザの走査により半円状の凹部3aを起点とする亀裂を進展させて被加工子基板1aを割断することにより、チップサイズのセラミック基板1bを作製する。   The laser irradiation position of the laser irradiation apparatus 2 is moved in the direction of the white arrow along the broken line X, which is the planned cutting portion of the strip-shaped workpiece substrate 1a having the semicircular recess 3a. By this laser scanning, a crack starting from the semicircular recess 3a is developed to cleave the workpiece substrate 1a, thereby producing a chip-sized ceramic substrate 1b.

以上のように、短冊状の被加工子基板に割断した後に起点となる凹部を形成しているので、短冊状の被加工子基板に割断する際に、起点となるマイクロクラックがほとんどないため、不所望な進展をする亀裂が生じにくい。そのため、短冊状の被加工子基板を割断した結果、得られるチップサイズの基板が、歪んだ形状となることを抑制することができる。   As described above, since the concave portion that becomes the starting point is formed after cleaving to the strip-shaped workpiece substrate, when cleaving to the strip-shaped workpiece substrate, there is almost no starting microcrack, Cracks that cause undesired progress are less likely to occur. Therefore, as a result of cleaving the strip-shaped workpiece substrate, it is possible to prevent the obtained chip-sized substrate from having a distorted shape.

また、短冊状の被加工子基板の長辺の両方に亀裂の起点となる凹部を形成しているので両方から亀裂が発生し、加工精度を向上させることができる。   Moreover, since the recessed part used as the starting point of a crack is formed in both the long sides of a strip-shaped workpiece substrate, a crack generate | occur | produces from both and a processing precision can be improved.

なお、このような亀裂の起点がずれることによって生じる問題は、短冊状の被加工子基板をチップサイズの基板に割断する二次割断工程時のものであり、被加工母基板から被加工子基板に割断する一次割断工程ではあまり問題とならない。これは、被加工母基板1の場合、割断距離が長いので、起点が多少ずれても所望の割断予定部分に漸近するからである。すなわち、図2に示すように、被加工母基板1をレーザ割断する場合、被加工母基板1の端部では起点Sの位置が、割断予定部分である破線Yからずれたとしても、レーザ照射領域LBを破線Yに沿って走査することでこの走査軌跡に追従して所望の割断予定部分Yに近似した割断線Kとなる。   In addition, the problem caused by such a shift of the starting point of the crack is that in the secondary cleaving process of cleaving the strip-shaped workpiece substrate to the chip size substrate, and the workpiece substrate from the workpiece mother substrate. In the primary cleaving process that cleaves, there is not much problem. This is because, in the case of the mother substrate 1 to be processed, the cleaving distance is long, so that even if the starting point is slightly deviated, it gradually approaches the desired cleaving portion. That is, as shown in FIG. 2, when laser processing is performed on the workpiece substrate 1, laser irradiation is performed even if the position of the starting point S is deviated from the broken line Y that is a portion to be cut at the end of the workpiece substrate 1. By scanning the region LB along the broken line Y, a cutting line K that follows the scanning trajectory and approximates the desired planned cutting part Y is obtained.

次に、本願発明の第2の実施形態に係るレーザ割断方法について図3を用いて説明する。図3は、本願発明の第2の実施の形態に係るレーザ割断方法で加工されている短冊状の被加工子基板1aの概略平面図である。   Next, a laser cleaving method according to a second embodiment of the present invention will be described with reference to FIG. FIG. 3 is a schematic plan view of a strip-shaped workpiece substrate 1a processed by the laser cleaving method according to the second embodiment of the present invention.

第2の実施形態では、上述の第1の実施形態とはレーザの走査を往復動作させている点で異なる。すなわち、図3に示すように、短冊状の被加工子基板1a上において、一方の長辺の凹部3aから他方の長辺の凹部3aに向けて黒矢印の方向にレーザ照射領域LBを移動させる。他方の長辺の凹部3aに達した後、折り返し、白矢印の方向に一方の長辺の凹部3aまでレーザ照射領域LBを移動させる。このように、レーザの走査を往復動作させることで、短冊状の被加工子基板1aを短辺方向に割断してチップサイズの基板1bを得ている。   The second embodiment differs from the above-described first embodiment in that the laser scanning is reciprocated. That is, as shown in FIG. 3, on the strip-shaped workpiece substrate 1a, the laser irradiation region LB is moved in the direction of the black arrow from the concave portion 3a on one long side toward the concave portion 3a on the other long side. . After reaching the other long side recess 3a, the laser irradiation region LB is turned to the one long side recess 3a in the direction of the white arrow. Thus, by reciprocating the scanning of the laser, the strip-shaped workpiece substrate 1a is cleaved in the short side direction to obtain the chip-sized substrate 1b.

本実施形態では、レーザ走査を往復動作させているので、一度目のレーザ走査で端部の凹部3a付近で亀裂が入りきらなかった場合でも、再度のレーザ走査により亀裂が進展し、確実に割断を行うことができる。   In this embodiment, since the laser scanning is reciprocated, even if the crack is not completely formed in the vicinity of the concave portion 3a at the end by the first laser scanning, the crack progresses by the second laser scanning and is reliably cleaved. It can be performed.

本願発明に係る被加工母基板の一次割断工程から被加工子基板の二次割断工程までを示す概略説明図。Schematic explanatory drawing which shows from the primary cleaving process of the to-be-processed mother board which concerns on this invention to the secondary cleaving process of a to-be-processed substrate. 起点ズレとレーザ照射位置の軌跡との関係を示す概略説明図。Schematic explanatory drawing which shows the relationship between a starting point shift | offset | difference and the locus | trajectory of a laser irradiation position. 本願発明の第2の実施の形態に係るレーザ割断装置で加工されている被加工子基板の平面図。The top view of the to-be-processed substrate processed with the laser cleaving apparatus which concerns on 2nd Embodiment of this invention. 従来のレーザ割断方法を用いた場合の被加工母基板の一次割断工程から被加工子基板の二次割断工程までを示す概略説明図。Schematic explanatory drawing which shows from the primary cleaving process of the to-be-processed mother board | substrate at the time of using the conventional laser cleaving method to the secondary cleaving process of a to-be-processed substrate. 起点となる穴周囲のマイクロクラックと一次割断時のレーザ照射位置との関係を示す概略説明図。Schematic explanatory drawing which shows the relationship between the micro crack around the hole used as the starting point, and the laser irradiation position at the time of primary cleaving.

符号の説明Explanation of symbols

1,11 被加工母基板
1a,11a 被加工子基板
1b チップサイズの基板
2 レーザ照射装置
3,13 穴
3a 凹部
X,Y 割断予定部分
C1,C2 マイクロクラック
K 割断線
S 起点
LB レーザ照射領域
DESCRIPTION OF SYMBOLS 1,11 Substrate to be processed 1a, 11a Substrate to be processed 1b Chip-sized substrate 2 Laser irradiation device 3, 13 Hole 3a Recess X, Y Planned part C1, C2 Microcrack K Split line S Starting point LB Laser irradiation region

Claims (4)

脆性材料からなる被加工母基板を割断して短冊状の被加工子基板を形成する工程と、
前記被加工子基板の長辺に、前記被加工子基板を割断する起点となる凹部を形成する工程と、
前記凹部付近にレーザを照射することにより前記被加工子基板を局部的に加熱し、その熱応力によって前記被加工子基板の凹部に亀裂を生じさせる工程と、
レーザ照射により前記亀裂を進展させて前記短冊状の被加工子基板を割断する工程と、
を備えることを特徴とするレーザ割断方法。
A step of cleaving a processed mother substrate made of a brittle material to form a strip-shaped processed child substrate;
Forming a recess serving as a starting point for cleaving the workpiece substrate on the long side of the workpiece substrate;
A step of locally heating the workpiece substrate by irradiating a laser in the vicinity of the recess, and causing a crack in the recess of the workpiece substrate by the thermal stress;
Cleaving the strip-shaped workpiece substrate by advancing the crack by laser irradiation;
A laser cleaving method comprising:
前記被加工子基板を形成する工程後、前記被加工子基板を割断した状態で前記被加工母基板の外形状を保ったまま、前記被加工子基板を割断する起点となる凹部を形成することを特徴とする請求項1記載のレーザ割断方法。   After the step of forming the workpiece substrate, forming a recess serving as a starting point for cleaving the workpiece substrate while maintaining the outer shape of the workpiece mother substrate in a state in which the workpiece substrate is cleaved. 2. The laser cleaving method according to claim 1, wherein: 前記被加工子基板を割断する起点となる凹部を形成する工程において、前記被加工子基板の対向する二つの長辺の両側に凹部を形成することを特徴とする請求項1または2記載のレーザ割断方法。   3. The laser according to claim 1, wherein, in the step of forming a recess serving as a starting point for cleaving the workpiece substrate, the recess is formed on both sides of two opposing long sides of the workpiece substrate. Cleaving method. 前記被加工子基板の割断工程において、前記亀裂の進展方向にレーザを走査して前記被加工子基板の幅全体を走査し終わった後、前記亀裂の進展方向の逆方向へレーザを走査することを特徴とする請求項1ないし3記載のレーザ割断方法。   In the cleaving step of the workpiece substrate, after scanning the entire width of the workpiece substrate by scanning the laser in the crack propagation direction, the laser is scanned in the direction opposite to the crack propagation direction. The laser cleaving method according to any one of claims 1 to 3.
JP2007001289A 2007-01-09 2007-01-09 Laser cutting method Pending JP2008168304A (en)

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JP2012040708A (en) * 2010-08-17 2012-03-01 Disco Corp Dividing method
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