JP2008160674A

JP2008160674A - Solid-state imaging device and driving method of solid-state imaging device

Info

Publication number: JP2008160674A
Application number: JP2006349505A
Authority: JP
Inventors: Noriko Kawamura; 典子河村
Original assignee: Fujifilm Corp
Current assignee: Fujifilm Corp
Priority date: 2006-12-26
Filing date: 2006-12-26
Publication date: 2008-07-10

Abstract

【課題】動画撮像時等の高速撮像処理を行う場合に、駆動時間の短縮を実現することができる固体撮像装置及び固体撮像装置の駆動方法を提供する。
【解決手段】本発明は、半導体基板表面に行方向とこれに直行する列方向に設けられた複数の光電変換素子と、光電変換素子で発生する信号電荷を列方向に転送する垂直電荷転送部と、垂直電荷転送部からの電荷を行方向に転送する水平電荷転送部とを備え、複数の光電変換素子が、行方向とこれに直行する列方向とに正方格子状に配置された第１光電変換素子と、行方向とこれに直行する列方向とに正方格子状に配置された第２光電変換素子とを有し、第１光電変換素子と第２光電変換素子とが、同一の配列ピッチで、かつ、互いに配列ピッチの１／２だけ行方向及び列方向にずらして配置されており、高速撮像の処理時には、第１光電変換素子と第２光電変換素子とのうち一方のみの信号電荷を読み出すように制御する。
【選択図】図２Provided are a solid-state imaging device and a driving method of the solid-state imaging device capable of reducing the driving time when performing high-speed imaging processing such as when capturing a moving image.
The present invention relates to a plurality of photoelectric conversion elements provided in a row direction and a column direction orthogonal to the surface of a semiconductor substrate, and a vertical charge transfer unit that transfers signal charges generated in the photoelectric conversion elements in the column direction. And a horizontal charge transfer unit that transfers charges from the vertical charge transfer unit in the row direction, and a plurality of photoelectric conversion elements are arranged in a square lattice pattern in the row direction and the column direction perpendicular thereto. A photoelectric conversion element, and a second photoelectric conversion element arranged in a square lattice pattern in a row direction and a column direction perpendicular thereto, wherein the first photoelectric conversion element and the second photoelectric conversion element are arranged in the same array The signals are arranged at a pitch and shifted from each other in the row direction and the column direction by a half of the arrangement pitch, and at the time of high-speed imaging processing, only one of the signals of the first photoelectric conversion element and the second photoelectric conversion element Control to read charge.
[Selection] Figure 2

Description

本発明は、半導体基板上にＲ（赤）、Ｇ（緑）、Ｂ（青）等の色成分をそれぞれ検出する光電変換部を備え、光電変換部で発生した信号電荷を出力する固体撮像装置及び固体撮像装置の駆動方法に関する。 The present invention includes a photoelectric conversion unit that detects color components such as R (red), G (green), and B (blue) on a semiconductor substrate, and outputs a signal charge generated by the photoelectric conversion unit. And a driving method of the solid-state imaging device.

固体撮像装置に設けられる固体撮像素子は、半導体基板の表面の行方向とこれに直交する列方向に配置された複数の光電変換素子を備えている。各光電変換素子の上方に、Ｒ（赤）、Ｇ（緑）、Ｂ（青）等の色成分の光を透過するカラーフィルタが位置するよう、所定のカラー配列に従ってカラーフィルタ層が形成されている。固体撮像装置の駆動時には、複数の光電変換素子が入射光の光強度に応じて信号電荷に変換し、複数の垂直電荷転送部に移した後、それぞれの垂直電荷転送部に沿って水平電荷転送部へ垂直転送し、水平電荷転送部に蓄積された信号電荷を水平転送し、出力部から信号電荷に対応する電圧信号を出力する構成である。 A solid-state imaging device provided in a solid-state imaging device includes a plurality of photoelectric conversion elements arranged in a row direction on the surface of a semiconductor substrate and a column direction orthogonal thereto. A color filter layer is formed according to a predetermined color arrangement so that a color filter that transmits light of color components such as R (red), G (green), and B (blue) is positioned above each photoelectric conversion element. Yes. When driving a solid-state imaging device, a plurality of photoelectric conversion elements convert to signal charges according to the light intensity of incident light, move to a plurality of vertical charge transfer units, and then transfer horizontal charges along each vertical charge transfer unit In this configuration, the signal charges accumulated in the horizontal charge transfer unit are horizontally transferred, and a voltage signal corresponding to the signal charge is output from the output unit.

固体撮像装置の駆動において、動画やオートフォーカスの動作時には、高速撮像処理を実行する必要があるため、通常、垂直転送路から転送される信号電荷の一部をラインメモリに一時的に蓄積し、所定のタイミングで水平電荷転送部へ転送することによって、水平電荷転送部において同色の信号電荷同士を加算（いわゆる水平混合）する処理が行われている（例えば、下記特許文献１参照）。 When driving a solid-state imaging device, it is necessary to execute high-speed imaging processing when moving images or autofocusing. Therefore, usually a part of the signal charge transferred from the vertical transfer path is temporarily stored in the line memory. A process of adding signal charges of the same color (so-called horizontal mixing) is performed in the horizontal charge transfer unit by transferring it to the horizontal charge transfer unit at a predetermined timing (see, for example, Patent Document 1 below).

特開２００３−２６４８４４号公報JP 2003-264844 A

しかし、水平電荷転送部において信号電荷を加算する場合には、ラインメモリの制御を行うとともに、水平電荷転送部を形成する水平転送レジスタにおいて信号電荷を混合させた後で転送を行うため時間がかかり、撮像処理の駆動時間の高速化を図る上で更なる改善の余地があった。 However, when adding signal charges in the horizontal charge transfer unit, it takes time to control the line memory and to transfer after mixing the signal charges in the horizontal transfer register forming the horizontal charge transfer unit. There is room for further improvement in speeding up the driving time of the imaging process.

本発明は、上記事情に鑑みてなされたもので、その目的は、動画撮像時等の高速撮像処理を行う場合に、駆動時間の短縮を実現することができる固体撮像装置及び固体撮像装置の駆動方法を提供することにある。 The present invention has been made in view of the above circumstances, and its object is to drive a solid-state imaging device and a solid-state imaging device capable of reducing the driving time when performing high-speed imaging processing such as when capturing a moving image. It is to provide a method.

本発明の上記目的は、下記構成によって達成される。
（１）半導体基板と、前記半導体基板表面に行方向とこれに直行する列方向に設けられた複数の光電変換素子と、前記光電変換素子で発生する信号電荷を列方向に転送する垂直電荷転送部と、前記垂直電荷転送部からの電荷を前記行方向に転送する水平電荷転送部と、を備え、前記複数の光電変換素子が、行方向とこれに直行する列方向とに正方格子状に配置された第１光電変換素子と、行方向とこれに直行する列方向とに正方格子状に配置された第２光電変換素子とを有し、前記第１光電変換素子と前記第２光電変換素子とが、同一の配列ピッチで、かつ、互いに配列ピッチの１／２だけ行方向及び列方向にずらして配置されており、高速撮像の処理時に、前記第１光電変換素子と前記第２光電変換素子とのうち一方のみの信号電荷を読み出すように制御する駆動部が設けられていることを特徴とする固体撮像装置。
（２）前記第１光電変換素子と前記第２光電変換素子とのうち、一方が相対的に高感度の光電変換を行う複数の高感度光電変換素子であって、且つ、他方が相対的に低感度の光電変換を行う複数の低感度光電変換素子であることを特徴とする上記（１）に記載の固体撮像装置。
（３）前記垂直電荷転送部は、前記光電変換素子同士の間を列方向に配設された複数の垂直電荷転送電極と、前記光電変換部で発生した信号電荷を前記垂直電荷転送電極に読み出す電荷読み出し領域とを有することを特徴とする上記（１）又は（２）に記載の固体撮像装置。
（４）前記垂直電荷転送部から転送された信号電荷を一時的に蓄積するラインメモリを有することを特徴とする上記（１）から（３）のいずれか１つに記載の固体撮像装置。
（５）前記第１光電変換素子に対応して赤、緑、青のカラーフィルタがベイヤー配列で形成され、かつ、前記第２光電変換素子に対応して赤、緑、青等のカラーフィルタがベイヤー配列で形成されていることを特徴とする上記（１）から（４）のいずれか１つに記載の固体撮像装置。
（６）高速撮像の処理時に、前記第１光電変換素子と前記第２光電変換素子とのうち信号電荷を読み出さなかった光電変換素子のスミア電荷を少なくとも一回掃き出す処理を行うように制御することを特徴とする上記（１）から（５）のいずれか１つに記載の固体撮像装置。
（７）半導体基板と、前記半導体基板表面に行方向とこれに直行する列方向に設けられた複数の光電変換素子と、前記光電変換素子で発生する信号電荷を列方向に転送する垂直電荷転送部と、前記垂直電荷転送部からの電荷を前記行方向に転送する水平電荷転送部と、を備え、前記複数の光電変換素子が、行方向とこれに直行する列方向とに正方格子状に配置された第１光電変換素子と、行方向とこれに直行する列方向とに正方格子状に配置された第２光電変換素子とを有し、前記第１光電変換素子と前記第２光電変換素子とが、同一の配列ピッチで、かつ、互いに配列ピッチの１／２だけ行方向及び列方向にずらして配置された固体撮像装置の駆動方法であって、高速撮像の処理時に、前記第１光電変換素子と前記第２光電変換素子とのうち一方のみの信号電荷を読み出すように制御する駆動部が設けられていることを特徴とする固体撮像装置の駆動方法。
（８）前記第１光電変換素子と前記第２光電変換素子とのうち、一方が相対的に高感度の光電変換を行う複数の高感度光電変換素子であって、且つ、他方が相対的に低感度の光電変換を行う複数の低感度光電変換素子であり、高速撮像の処理時に前記複数の高感度光電変換素子の信号電荷のみを読み出すことを特徴とする上記（７）に記載の固体撮像装置の駆動方法。
（９）前記垂直電荷転送部は、前記光電変換素子同士の間を列方向に配設された複数の垂直電荷転送電極と、前記光電変換部で発生した信号電荷を前記垂直電荷転送電極に読み出す電荷読み出し領域とを有し、高速撮像の処理時に、前記第１光電変換素子と前記第２光電変換素子とのうち一方のみの信号電荷を前記読み出し領域によって前記垂直電荷転送電極へ読み出すことを特徴とする上記（７）に記載の固体撮像装置の駆動方法。
（１０）前記垂直電荷転送部から転送された信号電荷を一時的に蓄積するラインメモリを有することを特徴とする上記（７）から（９）のいずれか１つに記載の固体撮像装置の駆動方法。
（１１）前記第１光電変換素子に対応して赤、緑、青のカラーフィルタがベイヤー配列で形成され、かつ、前記第１光電変換素子に対応して赤、緑、青等のカラーフィルタがベイヤー配列で形成されていることを特徴とする上記（７）から（１０）のいずれか１つに記載の固体撮像装置の駆動方法。
（１２）高速撮像の処理時に、前記第１光電変換素子と前記第２光電変換素子とのうち信号電荷を読み出さなかった光電変換素子のスミア電荷を少なくとも一回掃き出す処理を行うように制御することを特徴とする上記（７）から（１１）のいずれか１つに記載の固体撮像装置の駆動方法。 The above object of the present invention is achieved by the following configurations.
(1) A semiconductor substrate, a plurality of photoelectric conversion elements provided on the semiconductor substrate surface in a row direction and a column direction perpendicular thereto, and vertical charge transfer for transferring signal charges generated in the photoelectric conversion elements in the column direction And a horizontal charge transfer unit that transfers charges from the vertical charge transfer unit in the row direction, and the plurality of photoelectric conversion elements are arranged in a square lattice pattern in the row direction and the column direction perpendicular thereto. A first photoelectric conversion element disposed; and a second photoelectric conversion element disposed in a square lattice pattern in a row direction and a column direction perpendicular to the first photoelectric conversion element, the first photoelectric conversion element and the second photoelectric conversion element The elements are arranged at the same arrangement pitch and shifted in the row direction and the column direction by a half of the arrangement pitch with each other, and the first photoelectric conversion element and the second photoelectric conversion element are processed during high-speed imaging processing. Read the signal charge of only one of the conversion elements The solid-state imaging device, wherein a driving unit that controls the Suyo is provided.
(2) Among the first photoelectric conversion element and the second photoelectric conversion element, one is a plurality of high-sensitivity photoelectric conversion elements that perform relatively high-sensitivity photoelectric conversion, and the other is relatively The solid-state imaging device according to (1) above, which is a plurality of low-sensitivity photoelectric conversion elements that perform low-sensitivity photoelectric conversion.
(3) The vertical charge transfer unit reads a plurality of vertical charge transfer electrodes arranged in the column direction between the photoelectric conversion elements and the signal charge generated in the photoelectric conversion unit to the vertical charge transfer electrode. The solid-state imaging device according to (1) or (2), further comprising a charge readout region.
(4) The solid-state imaging device according to any one of (1) to (3), further including a line memory that temporarily stores the signal charge transferred from the vertical charge transfer unit.
(5) Red, green, and blue color filters are formed in a Bayer array corresponding to the first photoelectric conversion elements, and red, green, and blue color filters are formed corresponding to the second photoelectric conversion elements. The solid-state imaging device according to any one of (1) to (4), wherein the solid-state imaging device is formed in a Bayer array.
(6) At the time of high-speed imaging processing, control is performed so as to perform a process of sweeping out smear charges of the photoelectric conversion elements that have not read out the signal charges out of the first photoelectric conversion elements and the second photoelectric conversion elements. The solid-state imaging device according to any one of (1) to (5), characterized in that:
(7) Semiconductor substrate, a plurality of photoelectric conversion elements provided in a row direction and a column direction perpendicular to the semiconductor substrate surface, and vertical charge transfer for transferring signal charges generated in the photoelectric conversion elements in the column direction And a horizontal charge transfer unit that transfers charges from the vertical charge transfer unit in the row direction, and the plurality of photoelectric conversion elements are arranged in a square lattice pattern in the row direction and the column direction perpendicular thereto. A first photoelectric conversion element disposed; and a second photoelectric conversion element disposed in a square lattice pattern in a row direction and a column direction perpendicular to the first photoelectric conversion element, the first photoelectric conversion element and the second photoelectric conversion element The element is a driving method of a solid-state imaging device in which the elements are arranged at the same arrangement pitch and are shifted from each other by ½ of the arrangement pitch in the row direction and the column direction. The photoelectric conversion element and the second photoelectric conversion element The driving method of the solid-state imaging device, wherein a driving unit for controlling so as to read out signal charges of one only is provided.
(8) Of the first photoelectric conversion element and the second photoelectric conversion element, one is a plurality of high-sensitivity photoelectric conversion elements that perform relatively high-sensitivity photoelectric conversion, and the other is relatively A plurality of low-sensitivity photoelectric conversion elements that perform low-sensitivity photoelectric conversion, and reading out only signal charges of the plurality of high-sensitivity photoelectric conversion elements during processing of high-speed imaging, the solid-state imaging according to (7) above Device driving method.
(9) The vertical charge transfer unit reads a plurality of vertical charge transfer electrodes arranged in the column direction between the photoelectric conversion elements, and signal charges generated in the photoelectric conversion unit to the vertical charge transfer electrodes. A charge readout region, and during high-speed imaging processing, signal charge of only one of the first photoelectric conversion element and the second photoelectric conversion element is read out to the vertical charge transfer electrode by the readout region. The driving method of the solid-state imaging device according to (7) above.
(10) The driving of the solid-state imaging device according to any one of (7) to (9), further including a line memory for temporarily storing the signal charge transferred from the vertical charge transfer unit. Method.
(11) Red, green, and blue color filters are formed in a Bayer array corresponding to the first photoelectric conversion elements, and red, green, blue, and other color filters are formed corresponding to the first photoelectric conversion elements. The solid-state imaging device driving method according to any one of (7) to (10), wherein the driving method is a Bayer array.
(12) At the time of high-speed imaging processing, control is performed so as to perform a process of sweeping out smear charges of the photoelectric conversion elements that have not read out the signal charges out of the first photoelectric conversion elements and the second photoelectric conversion elements. The method for driving a solid-state imaging device according to any one of (7) to (11) above, characterized in that:

本発明は、高速撮像の処理時にのみ、第１光電変換素子と第２光電変換素子のいずれかで信号電荷を読み出すことで、従来のように全部の画素を読み出して水平電荷転送部で信号電荷を混合する際の処理にかかる時間を省くことができ、撮像処理にかかる時間を短縮することができる。例えば、静止画のように画質を優先した撮像を行う場合には、第１光電変換素子及び第２光電変換素子の両方から信号電荷を読み出し、水平電荷転送部で水平混合を行うことでダイナミックレンジの広い撮像画像を生成することができ、また、動画やオートフォーカス時のように、高速処理を優先して撮像を行う場合には、第１光電変換素子及び第２光電変換素子の一方から信号電荷を読み出して撮像画像を生成することができる。このように、使用者の撮像の目的に応じて、適した撮像処理を実行することができ、特に高速撮像の処理時には、処理時間の短縮を図ることができる。 The present invention reads out signal charges with either the first photoelectric conversion element or the second photoelectric conversion element only at the time of high-speed imaging processing, so that all pixels are read out as in the prior art, and the signal charge is read by the horizontal charge transfer unit. It is possible to save the time required for the processing when mixing the images, and to shorten the time required for the imaging processing. For example, when imaging with priority on image quality, such as a still image, the signal charge is read from both the first photoelectric conversion element and the second photoelectric conversion element, and the horizontal charge transfer unit performs horizontal mixing to obtain a dynamic range. A wide range of captured images can be generated, and when imaging is performed with priority given to high-speed processing, such as during moving images or autofocus, a signal is output from one of the first photoelectric conversion element and the second photoelectric conversion element. A charge image can be read to generate a captured image. As described above, it is possible to execute an appropriate imaging process according to the purpose of the user's imaging, and it is possible to shorten the processing time particularly during the high-speed imaging process.

本発明によれば、動画撮像時等の高速撮像処理を行う場合に、駆動時間の短縮を実現することができる固体撮像装置及び固体撮像装置の駆動方法を提供できる。 According to the present invention, it is possible to provide a solid-state imaging device and a driving method for the solid-state imaging device that can realize a reduction in driving time when performing high-speed imaging processing such as when capturing a moving image.

以下、本発明の実施形態を図面に基づいて詳しく説明する。
図１は、本発明の一実施形態に係るデジタルカメラの機能ブロック図である。図示するデジタルカメラは、撮影レンズ２０と、ＣＣＤ型の固体撮像素子１００と、この両者の間に設けられた絞り２２と、赤外線カットフィルタ２３と、光学ローパスフィルタ２４とを備える。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a functional block diagram of a digital camera according to an embodiment of the present invention. The digital camera shown in the figure includes a photographic lens 20, a CCD type solid-state imaging device 100, a diaphragm 22 provided therebetween, an infrared cut filter 23, and an optical low-pass filter 24.

デジタルカメラの電気制御系全体を統括制御するＣＰＵ２５は、フラッシュ発光部２６及び受光部２７を制御し、レンズ駆動部２８を制御して撮影レンズ２０の位置をフォーカス位置に調整したりズーム調整を行い、絞り駆動部２９を介し絞り２２の開口量を制御して露光量調整を行う。 The CPU 25 that controls the entire electric control system of the digital camera controls the flash light emitting unit 26 and the light receiving unit 27, and controls the lens driving unit 28 to adjust the position of the photographing lens 20 to the focus position and perform zoom adjustment. The exposure amount is adjusted by controlling the aperture amount of the aperture 22 via the aperture drive unit 29.

また、ＣＰＵ２５は、撮像素子駆動部３０を介して固体撮像素子１００を駆動し、撮影レンズ２０を通して撮像した被写体画像を色信号として出力させる。ＣＰＵ２５には、操作部３１を通してユーザからの指示信号が入力され、また、固体撮像素子１００の温度を検出する温度センサ３２からの検出信号が入力され、ＣＰＵ２５はこれらの信号に従って各種制御を行う。 Further, the CPU 25 drives the solid-state imaging device 100 via the imaging device driving unit 30 and outputs the subject image captured through the photographing lens 20 as a color signal. An instruction signal from the user is input to the CPU 25 through the operation unit 31, and a detection signal from the temperature sensor 32 that detects the temperature of the solid-state imaging device 100 is input. The CPU 25 performs various controls according to these signals.

デジタルカメラの電気制御系は、更に、固体撮像素子１００の出力に接続されたアナログ信号処理部３３と、このアナログ信号処理部３３から出力されたＲＧＢの色信号をデジタル信号に変換するＡ／Ｄ変換回路３４とを備え、これらはＣＰＵ２５によって制御される。 The electric control system of the digital camera further includes an analog signal processing unit 33 connected to the output of the solid-state imaging device 100, and an A / D that converts the RGB color signal output from the analog signal processing unit 33 into a digital signal. The conversion circuit 34 is provided, and these are controlled by the CPU 25.

更に、このデジタルカメラの電気制御系は、メインメモリ（フレームメモリ）３６に接続されたメモリ制御部３７と、補間演算やガンマ補正演算，ＲＧＢ／ＹＣ変換処理等を行うデジタル信号処理部３８と、撮像画像をＪＰＥＧ画像に圧縮したり圧縮画像を伸張したりする圧縮伸張処理部３９と、測光データを積算しデジタル信号処理部３８が行うホワイトバランス補正のゲインを求める積算部４０と、着脱自在の記録媒体４１が接続される外部メモリ制御部４２と、カメラ背面等に搭載された液晶表示部４３が接続される表示制御部４４とを備え、これらは、制御バス４６及びデータバス４７によって相互に接続され、ＣＰＵ２５からの指令によって制御される。 Furthermore, the electric control system of the digital camera includes a memory control unit 37 connected to a main memory (frame memory) 36, a digital signal processing unit 38 that performs interpolation calculation, gamma correction calculation, RGB / YC conversion processing, and the like. A compression / expansion processing unit 39 that compresses the captured image into a JPEG image or expands the compressed image, an integration unit 40 that integrates photometric data and calculates the gain of white balance correction performed by the digital signal processing unit 38, and a detachable unit An external memory control unit 42 to which a recording medium 41 is connected and a display control unit 44 to which a liquid crystal display unit 43 mounted on the back of the camera or the like is connected are connected to each other by a control bus 46 and a data bus 47. Connected and controlled by a command from the CPU 25.

図２は、図１に示す固体撮像素子１００の平面模式図である。
固体撮像素子１００は、半導体基板上の垂直方向とこれに直交する水平方向に配列された複数の光電変換素子１０１と、複数の光電変換素子１０１の各々で発生した電荷を垂直方向に転送する複数の垂直電荷転送部（ＶＣＣＤ）１０２と、複数の垂直電荷転送部１０２の各々を転送されてきた電荷を一時的に蓄積するラインメモリ１０５と、ラインメモリ１０５から出力された電荷を水平方向に転送する水平電荷転送部（ＨＣＣＤ）１０３と、水平電荷転送部１０３を転送されてきた電荷に応じた信号を出力する出力部１０４とを備えている。
なお、本実施形態では、半導体基板の垂直方向を行方向とし、水平方向を列方向としている。 FIG. 2 is a schematic plan view of the solid-state imaging device 100 shown in FIG.
The solid-state imaging device 100 includes a plurality of photoelectric conversion elements 101 arranged in a vertical direction on a semiconductor substrate and a horizontal direction orthogonal thereto, and a plurality of charges that transfer charges generated in each of the plurality of photoelectric conversion elements 101 in the vertical direction. Vertical charge transfer unit (VCCD) 102, line memory 105 for temporarily storing the charges transferred from each of the plurality of vertical charge transfer units 102, and the charges output from line memory 105 are transferred in the horizontal direction. A horizontal charge transfer unit (HCCD) 103 that outputs the signal, and an output unit 104 that outputs a signal corresponding to the charge transferred through the horizontal charge transfer unit 103.
In the present embodiment, the vertical direction of the semiconductor substrate is the row direction, and the horizontal direction is the column direction.

多数の光電変換素子１０１は、水平方向に並ぶｎ個（ｎは２以上の自然数）の光電変換素子１０１からなる光電変換素子行を垂直方向にｍ（ｍは２以上の自然数）個配列した構成、又は、垂直方向に並ぶｍ個の光電変換素子１０１からなる光電変換素子列を水平方向にｎ個配列した構成となっている。奇数番目の光電変換素子行は、偶数番目の光電変換素子行に対して、各光電変換素子行の光電変換素子配列ピッチの略１／２だけ水平方向にずらして配置された、所謂、ハニカム配列となっている。 The large number of photoelectric conversion elements 101 are configured by arranging m (m is a natural number of 2 or more) photoelectric conversion element rows composed of n (n is a natural number of 2 or more) arranged in the horizontal direction in the vertical direction. Alternatively, n photoelectric conversion element arrays composed of m photoelectric conversion elements 101 arranged in the vertical direction are arranged in the horizontal direction. The odd-numbered photoelectric conversion element rows are arranged so as to be shifted in the horizontal direction by about 1/2 of the photoelectric conversion element arrangement pitch of each photoelectric conversion element row with respect to the even-numbered photoelectric conversion element rows, so-called honeycomb arrangement It has become.

言い換えると、複数の光電変換素子１０１は、垂直方向（行方向）とこれに直行する水平方向（列方向）とに正方格子状に配置された第１光電変換素子と垂直方向とこれに直行する水平方向とに正方格子状に配置された第２光電変換素子とを有しており、第１光電変換素子と第２光電変換素子とが、同一の配列ピッチで、かつ、互いに配列ピッチの１／２だけ行方向及び列方向にずらして配置されている。本実施形態では、奇数番目の列に配置された光電変換素子を第１光電変換素子とし、偶数番目の列に配置された光電変換素子を第２光電変換素子とした。しかし、偶数番目の列に配置された光電変換素子を第１光電変換素子とし、奇数番目の列に配置された光電変換素子を第２光電変換素子としてもよい。 In other words, the plurality of photoelectric conversion elements 101 are orthogonal to the first photoelectric conversion elements arranged in a square lattice pattern in the vertical direction (row direction) and the horizontal direction (column direction) perpendicular thereto. The second photoelectric conversion elements are arranged in a square lattice pattern in the horizontal direction, and the first photoelectric conversion elements and the second photoelectric conversion elements have the same arrangement pitch and one of the arrangement pitches of each other. They are arranged shifted by / 2 in the row direction and the column direction. In the present embodiment, the photoelectric conversion elements arranged in the odd-numbered columns are the first photoelectric conversion elements, and the photoelectric conversion elements arranged in the even-numbered columns are the second photoelectric conversion elements. However, the photoelectric conversion elements arranged in the even-numbered columns may be used as the first photoelectric conversion elements, and the photoelectric conversion elements arranged in the odd-numbered columns may be used as the second photoelectric conversion elements.

本実施形態では、奇数番目の光電変換素子列を構成する光電変換素子１０１は、検出感度が相対的に高い高感度の高感度光電変換素子である。奇数番目の光電変換素子列には、緑色の波長域の光を検出する高感度の光電変換素子１０１（以下、Ｇ光電変換素子１０１という。図２では符号Ｇを記した）と、赤色の波長域の光を検出する高感度の光電変換素子１０１（以下、Ｒ光電変換素子１０１という。図２では符号Ｒを記した）を、Ｇ光電変換素子１０１を先頭にして垂直方向に交互に配列している列と、青色の波長域の光を検出する高感度の光電変換素子１０１（以下、Ｂ光電変換素子１０１という。図２では符号Ｂを記した）とＧ光電変換素子１０１とをＢ光電変換素子１０１を先頭にして垂直方向に交互に配列した行とが含まれ、これら２つの列が水平方向に交互に配列されている。 In the present embodiment, the photoelectric conversion elements 101 constituting the odd-numbered photoelectric conversion element arrays are high-sensitivity photoelectric conversion elements having a relatively high detection sensitivity. The odd-numbered photoelectric conversion element array includes a high-sensitivity photoelectric conversion element 101 (hereinafter referred to as G photoelectric conversion element 101. Reference numeral G is shown in FIG. 2) for detecting light in the green wavelength range, and a red wavelength. High-sensitivity photoelectric conversion elements 101 (hereinafter referred to as R photoelectric conversion elements 101; denoted by R in FIG. 2) are alternately arranged in the vertical direction with the G photoelectric conversion elements 101 at the head. The high-sensitivity photoelectric conversion element 101 (hereinafter referred to as B photoelectric conversion element 101; denoted by B in FIG. 2) and the G photoelectric conversion element 101 that detect light in the blue wavelength range and the B photoelectric conversion element. Rows alternately arranged in the vertical direction starting from the conversion element 101 are included, and these two columns are arranged alternately in the horizontal direction.

偶数番目の光電変換素子列を構成する光電変換素子１０１は、検出感度が相対的に低い低感度の光電変換素子である。偶数番目の光電変換素子列には、緑色の波長域の光を検出する低感度の光電変換素子１０１（以下、ｇ光電変換素子１０１という。図２では符号ｇを記した）と、赤色の波長域の光を検出する低感度の光電変換素子１０１（以下、ｒ光電変換素子１０１という。図２では符号ｒを記した）を、ｇ光電変換素子１０１を先頭にして垂直方向に交互に配列した行と、青色の波長域の光を検出する低感度の光電変換素子１０１（以下、ｂ光電変換素子１０１という。図２では符号ｂを記した）とｇ光電変換素子１０１を、ｂ光電変換素子１０１を先頭にして垂直方向に交互に配列した行とが含まれ、これら２つの行が水平方向に交互に配列されている。 The photoelectric conversion elements 101 constituting the even-numbered photoelectric conversion element arrays are low-sensitivity photoelectric conversion elements with relatively low detection sensitivity. The even-numbered photoelectric conversion element array includes a low-sensitivity photoelectric conversion element 101 that detects light in the green wavelength range (hereinafter referred to as “g photoelectric conversion element 101” and a red wavelength). Low-sensitivity photoelectric conversion elements 101 (hereinafter referred to as r photoelectric conversion elements 101; denoted by r in FIG. 2) are alternately arranged in the vertical direction starting with the g photoelectric conversion elements 101. A low-sensitivity photoelectric conversion element 101 (hereinafter referred to as b photoelectric conversion element 101; indicated by symbol b in FIG. 2) and a g photoelectric conversion element 101 for detecting light in a row and a blue wavelength region are referred to as b photoelectric conversion elements. The first row 101 and the second row are alternately arranged in the vertical direction, and these two rows are alternately arranged in the horizontal direction.

また、本実施形態の固体撮像素子１００のカラーフィルタのカラー配列は、第１光電変換素子（Ｇ光電変換素子１０１，Ｒ光電変換素子１０１，Ｂ光電変換素子１０１）に対応して赤、緑、青等のカラーフィルタがベイヤー配列で形成され、また、第２光電変換素子（ｇ光電変換素子１０１，ｒ光電変換素子１０１，ｂ光電変換素子１０１）に対応して赤、緑、青等のカラーフィルタがベイヤー配列で形成されている。このようにベイヤー配列を２つ組み合わせたカラーパターンであることからダブルベイヤー（配列）とも称される。 In addition, the color arrangement of the color filters of the solid-state imaging device 100 of the present embodiment corresponds to the first photoelectric conversion element (G photoelectric conversion element 101, R photoelectric conversion element 101, B photoelectric conversion element 101), red, green, Color filters such as blue are formed in a Bayer array, and colors such as red, green, and blue corresponding to the second photoelectric conversion elements (g photoelectric conversion element 101, r photoelectric conversion element 101, and b photoelectric conversion element 101). The filter is formed in a Bayer array. Since the color pattern is a combination of two Bayer arrays, it is also called a double Bayer (array).

光電変換素子の検出感度を変化させるには、光電変換素子の受光面の面積を変化させてもよいし、光電変換素子上方に設けたマイクロレンズによって、集光面積を変化させてもよいし、低感度の光電変換素子１０１と高感度の光電変換素子１０１とで露光時間を変化させてもよいし、出力部１０４において低感度の光電変換素子１０１から得られた電荷と高感度の光電変換素子１０１から得られた電荷の増幅率をそれぞれ変えてもよい。 To change the detection sensitivity of the photoelectric conversion element, the area of the light receiving surface of the photoelectric conversion element may be changed, or the light collection area may be changed by a microlens provided above the photoelectric conversion element, The exposure time may be changed between the low-sensitivity photoelectric conversion element 101 and the high-sensitivity photoelectric conversion element 101, and the charge obtained from the low-sensitivity photoelectric conversion element 101 in the output unit 104 and the high-sensitivity photoelectric conversion element The amplification factor of the charge obtained from 101 may be changed.

各光電変換素子列には、１つのＶＣＣＤ１０２が対応して設けられ、各ＶＣＣＤ１０２には、ここに対応する光電変換素子列に含まれるｍ個の光電変換素子１０１から電荷が読み出されるようになっている。 Each photoelectric conversion element array is provided with one VCCD 102, and each VCCD 102 reads electric charges from m photoelectric conversion elements 101 included in the corresponding photoelectric conversion element array. Yes.

各光電変換素子列とそれに対応するＶＣＣＤ１０２の電荷転送チャネルとの間には、図中に矢印で模式的に示した電荷読み出し領域が形成されており、この電荷読み出し領域を介して、露光期間中に各光電変換素子１０１で発生した信号電荷が、ＶＣＣＤ１０２の電荷転送チャネルに読み出される。 Between each photoelectric conversion element array and the charge transfer channel of the VCCD 102 corresponding thereto, a charge readout region schematically shown by an arrow in the figure is formed, and through this charge readout region, during the exposure period. The signal charges generated in each photoelectric conversion element 101 are read out to the charge transfer channel of the VCCD 102.

半導体基板表面の水平方向には、各光電変換素子１０１を避けるように蛇行して垂直電荷転送電極Ｖ１，Ｖ２，…，Ｖ８が敷設されている。半導体基板には各光電変換素子列の側部に図示しない電荷転送チャネルが、光電変換素子１０１を避けるように垂直方向に蛇行して形成されている。この電荷転送チャネルと、この上に設けられ垂直方向に配置される垂直電荷転送電極Ｖ１〜Ｖ８とでＶＣＣＤ１０２が形成される。ＶＣＣＤ１０２は、撮像素子駆動部１０から出力される垂直転送パルスφＶによって転送駆動される。ラインメモリ１０５に最も近いＶＣＣＤ１０２の垂直電荷転送電極はＶ８となっている。垂直電荷転送電極Ｖ１〜Ｖ８には、それぞれ垂直転送パルスφＶ１〜φＶ８が供給される。 Vertical charge transfer electrodes V1, V2,..., V8 are laid in a horizontal direction on the surface of the semiconductor substrate so as to avoid each photoelectric conversion element 101. On the semiconductor substrate, a charge transfer channel (not shown) is formed on the side of each photoelectric conversion element array so as to meander in the vertical direction so as to avoid the photoelectric conversion element 101. The VCCD 102 is formed by the charge transfer channel and the vertical charge transfer electrodes V1 to V8 provided on the charge transfer channel and arranged in the vertical direction. The VCCD 102 is driven to transfer by a vertical transfer pulse φV output from the image sensor driving unit 10. The vertical charge transfer electrode of the VCCD 102 closest to the line memory 105 is V8. Vertical transfer pulses φV1 to φV8 are supplied to the vertical charge transfer electrodes V1 to V8, respectively.

ラインメモリ１０５は、各ＶＣＣＤ１０２に対応するｎ個の電荷蓄積領域とその上方に設けられた駆動電極とで構成され、各電荷蓄積領域には、これに対応するＶＣＣＤ１０２から転送された電荷が一時的に蓄積される。ラインメモリ１０５の駆動電極には、撮像素子駆動部１０から出力される駆動パルスφＬＭが供給され、ラインメモリ１０５は、この駆動パルスφＬＭによって駆動される。 The line memory 105 is composed of n charge storage regions corresponding to each VCCD 102 and drive electrodes provided thereabove, and the charges transferred from the corresponding VCCD 102 are temporarily stored in the charge storage regions. Accumulated in. The drive electrodes of the line memory 105 are supplied with a drive pulse φLM output from the image sensor driving unit 10, and the line memory 105 is driven by this drive pulse φLM.

ＨＣＣＤ１０３は、図示しない電荷転送チャネルとその上に設けられた電極とで構成される。ＨＣＣＤ１０３は、撮像素子駆動部１０から出力される水平転送パルスφＨ１，φＨ２，φＨ３，φＨ４によって４相駆動される。ＨＣＣＤ１０３は、ラインメモリの各電荷蓄積領域に対応するｎ個の電荷転送段で構成され、各電荷転送段には、これに対応する電荷蓄積領域に蓄積された電荷が転送される。 The HCCD 103 includes a charge transfer channel (not shown) and an electrode provided thereon. The HCCD 103 is driven in four phases by horizontal transfer pulses φH1, φH2, φH3, and φH4 output from the image sensor driving unit 10. The HCCD 103 is composed of n charge transfer stages corresponding to each charge storage region of the line memory, and the charge stored in the charge storage region corresponding thereto is transferred to each charge transfer stage.

各電荷転送段は、同一の駆動パルスが供給される一対の電極と、その一対の電極下方の電荷転送チャネルとで構成されている。各電荷転送段を構成する一対の電極には、水平転送パルスφＨ１が供給される電極Ｈ１と、水平転送パルスφＨ２が供給される電極Ｈ２と、水平転送パルスφＨ３が供給される電極Ｈ３と、水平転送パルスφＨ４が供給される電極Ｈ４とが含まれる。電極Ｈ１〜Ｈ４の配列は、例えば、電極Ｈ１〜Ｈ４をこの順に水平方向に配列したパターンを、水平方向に繰り返して配列したものとなっている。 Each charge transfer stage includes a pair of electrodes to which the same drive pulse is supplied and a charge transfer channel below the pair of electrodes. A pair of electrodes constituting each charge transfer stage includes an electrode H1 to which a horizontal transfer pulse φH1 is supplied, an electrode H2 to which a horizontal transfer pulse φH2 is supplied, an electrode H3 to which a horizontal transfer pulse φH3 is supplied, and a horizontal And the electrode H4 to which the transfer pulse φH4 is supplied. The arrangement of the electrodes H1 to H4 is, for example, a pattern in which the electrodes H1 to H4 are arranged in this order in the horizontal direction and are repeatedly arranged in the horizontal direction.

なお、「垂直」「水平」という用語を使用して説明したが、これは、半導体基板表面に沿う「１方向」「この１方向に対して略直角の方向」という意味である。 Although the terms “vertical” and “horizontal” have been used, this means “one direction” along the surface of the semiconductor substrate and “a direction substantially perpendicular to the one direction”.

このように構成された固体撮像素子１００では、ラインメモリ１０５に、隣接する２つの光電変換素子行から得られた電荷を一度に蓄積することができる。Ｒ光電変換素子１０１から得られる電荷を“Ｒ”とし、Ｇ光電変換素子１０１から得られる電荷を“Ｇ”とし、Ｂ光電変換素子１０１から得られる電荷を“Ｂ”とし、ｒ光電変換素子１０１から得られる電荷を“ｒ”とし、ｇ光電変換素子１０１から得られる電荷を“ｇ”とし、ｂ光電変換素子１０１から得られる電荷を“ｂ”とすると、ラインメモリ１０５の各電荷蓄積領域に電荷が蓄積された状態での電荷の配列は、ＲｒＧｇＲｒＧｇＲｒＧｇ・・・、又は、ＧｇＢｂＧｇＢｂＧｇＢｂ・・・のように、ある電荷に注目したときに、その注目した電荷に隣接する２つの電荷のうち、一方の電荷がその注目した電荷と同一色成分となり、他方の電荷がその注目した電荷と異なる色成分となった配列となる。 In the solid-state imaging device 100 configured as described above, charges obtained from two adjacent photoelectric conversion element rows can be stored in the line memory 105 at a time. The charge obtained from the R photoelectric conversion element 101 is “R”, the charge obtained from the G photoelectric conversion element 101 is “G”, the charge obtained from the B photoelectric conversion element 101 is “B”, and the r photoelectric conversion element 101 Where “r” is the charge obtained from g, “g” is the charge obtained from the g photoelectric conversion element 101, and “b” is the charge obtained from the b photoelectric conversion element 101. The charge arrangement in a state where charges are accumulated is one of two charges adjacent to the noticed charge when attention is paid to a certain charge such as RrGgRrGgRrGg... Or GgBbGgBbGgBb. The charge is the same color component as the noticed charge, and the other charge is a different color component from the noticed charge.

次に、電荷を加算して読み出すための駆動方法を説明する。本実施形態の固体撮像装置は、静止画などの高画質を優先させた通常撮像の駆動処理と、動画やオートフォーカス動作時などの高速処理を優先させた高速撮像の駆動処理とを有している。通常撮像の駆動処理と高速撮像の駆動処理との切り替えは、使用者が操作部３１を操作することで入力した信号などに応じて切り替えることができる。例えば、使用者が、動画の撮像を行う旨の操作を行うと、信号が撮像素子駆動部３０に信号が入力されて高速撮像の駆動処理に設定される。 Next, a driving method for adding and reading charges will be described. The solid-state imaging device according to the present embodiment includes a normal imaging driving process that prioritizes high image quality such as a still image, and a high-speed imaging driving process that prioritizes high-speed processing such as a moving image or autofocus operation. Yes. Switching between the normal imaging driving process and the high-speed imaging driving process can be switched according to a signal input by the user operating the operation unit 31. For example, when the user performs an operation to capture a moving image, a signal is input to the image sensor driving unit 30 and is set to a driving process for high-speed imaging.

最初に、通常撮像の駆動処理について説明する。
図３は、図２に示した固体撮像素子１００において、通常撮像の駆動処理での駆動方法を説明するための図である。図４は、図３に示す時刻ｔ１〜ｔ４に応じた水平転送パルスφＨ１〜Ｈ４及び駆動パルスφＬＭのパルス波形を示すタイミングチャートである。図３には、ラインメモリ１０５の各電荷蓄積領域を長方形状のブロックで示し、各電荷蓄積領域の下に、これに対応するＨＣＣＤ１０５の電荷転送段を長方形状のブロックで示し、各電荷転送段の上方に、各電荷転送段を構成する電極Ｈ１〜Ｈ４を記した。 First, normal imaging drive processing will be described.
FIG. 3 is a diagram for explaining a driving method in the normal imaging driving process in the solid-state imaging device 100 shown in FIG. 2. FIG. 4 is a timing chart showing the pulse waveforms of the horizontal transfer pulses φH1 to H4 and the drive pulse φLM corresponding to the times t1 to t4 shown in FIG. In FIG. 3, each charge storage region of the line memory 105 is shown by a rectangular block, and the charge transfer stage of the HCCD 105 corresponding to this is shown by a rectangular block below each charge storage region. The electrodes H1 to H4 constituting each charge transfer stage are shown above.

露光期間が終了すると、各光電変換素子１０１から電荷をＶＣＣＤ１０２に読み出し、これらを垂直方向に転送するようＶＣＣＤ１０２を駆動する。そして、隣接する２つの光電変換素子行から得られた電荷（・・・ｇＲｒＧｇＲｒＧ・・・）を、Ｈの駆動パルスφＬＭが供給されているラインメモリ１０５に蓄積する（時刻ｔ１）。このとき、電極Ｈ１〜Ｈ４に供給される水平転送パルスφＨ１〜φＨ４はＨとなっている。 When the exposure period ends, the charges are read from the photoelectric conversion elements 101 to the VCCD 102, and the VCCD 102 is driven so as to transfer them in the vertical direction. Then, the charges (... GRrGgRrG...) Obtained from two adjacent photoelectric conversion element rows are accumulated in the line memory 105 to which the H drive pulse φLM is supplied (time t1). At this time, the horizontal transfer pulses φH1 to φH4 supplied to the electrodes H1 to H4 are H.

次に、駆動パルスφＬＭをＬにして、各電荷蓄積領域に蓄積された電荷を、それに対応する電荷転送段に移動させる（時刻ｔ２）。次に、駆動パルスφＬＭをＨにして、ラインメモリ１０５に、ＶＣＣＤ１０２からの電荷が蓄積できる状態に戻しておく（時刻ｔ３）。次に、ＨＣＣＤ１０３に転送された電荷のうち、隣接する同一色成分の２つの電荷のうちのＨＣＣＤ１０３の電荷転送方向上流側にある電荷のみを水平方向に転送するために、水平転送パルスφＨ１，φＨ３をＬにして、電極Ｈ１下にあった電荷ｇを電極Ｈ４下に転送し、電極Ｈ３下にあった電荷ｒを電極Ｈ２下に転送する（時刻ｔ４）。時刻ｔ４の駆動により、電荷Ｒに電荷ｒが加算され、電荷Ｇに電荷ｇが加算される。電荷加算後は、水平転送パルスφＨ１〜φＨ４をＬ，Ｈで切り替えていくことで、加算した電荷を順次水平方向に転送する。 Next, the drive pulse φLM is set to L, and the charge accumulated in each charge accumulation region is moved to the corresponding charge transfer stage (time t2). Next, the drive pulse φLM is set to H, and the line memory 105 is returned to a state where charges from the VCCD 102 can be accumulated (time t3). Next, in order to transfer only the charges on the upstream side in the charge transfer direction of the HCCD 103 out of the two charges of the same color component adjacent to the charges transferred to the HCCD 103, the horizontal transfer pulses φH1, φH3 Is set to L, the charge g under the electrode H1 is transferred under the electrode H4, and the charge r under the electrode H3 is transferred under the electrode H2 (time t4). By driving at time t4, the charge r is added to the charge R, and the charge g is added to the charge G. After the charge addition, the added charges are sequentially transferred in the horizontal direction by switching the horizontal transfer pulses φH1 to φH4 between L and H.

加算した電荷を水平方向に転送した後、又は、その途中で、ＶＣＣＤ１０２を駆動して、隣接する２つの光電変換素子行から得られた電荷（・・・ｂＧｇＢｂＧｇＢ・・・）をラインメモリ１０５に蓄積する。そして、時刻ｔ２〜ｔ４と同様に駆動パルスφＬＭと水平転送パルスφＨ１〜φＨ４を供給することで、電荷Ｇに電荷ｇを加算し、電荷Ｂに電荷ｂを加算する。電荷加算後は、水平転送パルスφＨ１〜φＨ４をＬ，Ｈで切り替えていくことで、加算した電荷を順次水平方向に転送する。このような駆動を繰り返すことで、全ての光電変換素子１０１から信号電荷を読み出す。 After the added charge is transferred in the horizontal direction, or during the transfer, the VCCD 102 is driven, and the charges (... BGgBbGgB...) Obtained from two adjacent photoelectric conversion element rows are transferred to the line memory 105. accumulate. Then, similarly to the times t2 to t4, by supplying the drive pulse φLM and the horizontal transfer pulses φH1 to φH4, the charge g is added to the charge G and the charge b is added to the charge B. After the charge addition, the added charges are sequentially transferred in the horizontal direction by switching the horizontal transfer pulses φH1 to φH4 between L and H. By repeating such driving, signal charges are read from all the photoelectric conversion elements 101.

次に、最初に、高速撮像の駆動処理について説明する。
図５は、図２に示した固体撮像素子１００において、高速撮像の駆動処理での駆動方法を説明するための図である。図５に示すように、固体撮像素子は、低感度光電変換素子の列ＬＬ１〜ＬＬ４と、高感度光電変換素子の列ＨＬ１〜ＨＬ４とを水平方向の交互に配置した状態を模式的に示している。また、ＨＣＣＤ１０３が、水平方向に配設された複数の水平転送レジスタＨ１Ａ，Ｈ２Ａ，Ｈ１Ｂ，Ｈ２Ｂで構成されている。水平転送レジスタＨ１Ａ，Ｈ１Ｂと、水平転送レジスタＨ２Ａ，Ｈ２Ｂとにそれぞれ同一の水平転送パルスが供給される。 Next, high-speed imaging drive processing will be described first.
FIG. 5 is a diagram for explaining a driving method in the high-speed imaging driving process in the solid-state imaging device 100 shown in FIG. As shown in FIG. 5, the solid-state imaging device schematically shows a state in which rows LL1 to LL4 of low-sensitivity photoelectric conversion elements and rows HL1 to HL4 of high-sensitivity photoelectric conversion elements are alternately arranged in the horizontal direction. Yes. The HCCD 103 includes a plurality of horizontal transfer registers H1A, H2A, H1B, and H2B arranged in the horizontal direction. The same horizontal transfer pulse is supplied to the horizontal transfer registers H1A and H1B and the horizontal transfer registers H2A and H2B, respectively.

固体撮像装置は、高速撮像の処理時には、撮像素子駆動部３０によって第１光電変換素子と第２光電変換素子とのうち一方のみの信号電荷を読み出すように制御することが可能である。本実施形態では、高感度撮像素子である第１光電変換素子から信号電荷を読み出し、低感度撮像素子である第２光電変換素子からは振動電荷を読み出さない。 The solid-state imaging device can be controlled to read out signal charges of only one of the first photoelectric conversion element and the second photoelectric conversion element by the imaging element driving unit 30 during high-speed imaging processing. In this embodiment, the signal charge is read from the first photoelectric conversion element that is a high-sensitivity image sensor, and the vibration charge is not read from the second photoelectric conversion element that is a low-sensitivity image sensor.

図２を参照すると、高速撮像の駆動時には、垂直電荷転送電極Ｖ３及びＶ７にそれぞれ垂直転送パルスφＶ３及びＶ７が供給される。すると、Ｇ光電変換素子１０１、Ｒ光電変換素子１０１、Ｂ光電変換素子１０１から信号電荷が電荷読み出し領域によって読み出され、電荷転送チャネルを介してＶＣＣＤ１０２に転送され、垂直転送された信号電荷がＨＣＣＤ１０３に順次転送される。 Referring to FIG. 2, during high-speed imaging driving, vertical transfer pulses φV3 and V7 are supplied to the vertical charge transfer electrodes V3 and V7, respectively. Then, the signal charges are read out from the G photoelectric conversion element 101, the R photoelectric conversion element 101, and the B photoelectric conversion element 101 by the charge reading region, transferred to the VCCD 102 through the charge transfer channel, and the vertically transferred signal charge is transferred to the HCCD 103. Are sequentially transferred.

すると、図５に示すように、高感度光電変換素子の列ＨＬ１〜ＨＬ４に高感度光電変換素子から読み出した信号電荷が蓄積され、水平転送レジスタに、各高感度光電変換素子に蓄積された信号電荷が転送される。そして、水平転送レジスタに転送された信号電荷を順次水平方向に転送する。このような駆動を繰り返すことで、全ての高感度光電変換素子１０１からの信号電荷を読み出す。 Then, as shown in FIG. 5, the signal charges read from the high-sensitivity photoelectric conversion elements are accumulated in the columns HL1 to HL4 of the high-sensitivity photoelectric conversion elements, and the signals accumulated in the respective high-sensitivity photoelectric conversion elements are stored in the horizontal transfer register. Charge is transferred. Then, the signal charges transferred to the horizontal transfer register are sequentially transferred in the horizontal direction. By repeating such driving, signal charges from all high-sensitivity photoelectric conversion elements 101 are read out.

高速撮像の駆動時には、低感度撮像素子の信号電荷を読み出さないため、低感度撮像素子の信号電荷と、高感度撮像素子の信号電荷とをＨＣＣＤ１０３において水平混合を行わないため、ラインメモリ１０５による制御を行う必要がない。 When driving at high speed imaging, the signal charge of the low-sensitivity image sensor is not read out. Therefore, the signal charge of the low-sensitivity image sensor and the signal charge of the high-sensitivity image sensor are not mixed horizontally in the HCCD 103. There is no need to do.

図６は、本発明の高速撮像の駆動方法と通常撮像の駆動方法とにおいて、撮像処理にかかる時間を示すタイミングチャートである。
図６（ａ）は、通常撮像の駆動時に全画素の読み出しを行っている。この場合、全ての光電変換素子から信号電荷を読み出して垂直転送路を経由して水平転送路に転送しており、水平転送路において水平混合を行う。このため、通常撮像の駆動時には、光電変換素子から信号電荷を読み出して垂直転送路へ転送する時間と、垂直転送路において水平混合する時間と、混合した信号電荷を水平転送レジスタを制御して水平方向に転送する時間とを含む処理時間がかかることとなる。 FIG. 6 is a timing chart showing the time required for imaging processing in the driving method for high-speed imaging and the driving method for normal imaging according to the present invention.
In FIG. 6A, all pixels are read out during normal imaging driving. In this case, signal charges are read from all the photoelectric conversion elements and transferred to the horizontal transfer path via the vertical transfer path, and horizontal mixing is performed in the horizontal transfer path. For this reason, during normal imaging driving, the signal charge is read from the photoelectric conversion element and transferred to the vertical transfer path, the time for horizontal mixing in the vertical transfer path, and the mixed signal charge is controlled by controlling the horizontal transfer register. Processing time including time for transferring in the direction is required.

図６（ｂ）は、高速撮像の駆動時に、第１光電変換素子及び第２光電変換素子のうち高感度光電変換素子の信号電荷のみの読み出しを行っている。この場合、高感度光電変換素子から信号電荷を読み出すが、低感度光電変換素子からは信号電荷を読み出さないため、水平転送路には高感度光電変換素子の信号電荷だけが転送されるため、水平転送路において水平混合が行われず、水平転送される。このため、高速撮像の処理時には、光電変換素子から信号電荷を読み出して垂直転送路へ転送する時間と、水平転送路に蓄積された信号電荷を水平転送レジスタを制御して水平方向に転送する時間とを含む処理時間がかかり、処理時間を垂直転送路において水平混合する時間の分だけ、通常撮像の処理時間に比べて短くすることができる。 In FIG. 6B, only the signal charge of the high-sensitivity photoelectric conversion element out of the first photoelectric conversion element and the second photoelectric conversion element is read out during high-speed imaging driving. In this case, the signal charge is read from the high-sensitivity photoelectric conversion element, but since the signal charge is not read from the low-sensitivity photoelectric conversion element, only the signal charge of the high-sensitivity photoelectric conversion element is transferred to the horizontal transfer path. Horizontal mixing is not performed in the transfer path, and horizontal transfer is performed. For this reason, during high-speed imaging processing, the time for reading the signal charge from the photoelectric conversion element and transferring it to the vertical transfer path, and the time for transferring the signal charge accumulated in the horizontal transfer path in the horizontal direction by controlling the horizontal transfer register And the processing time can be made shorter than the processing time for normal imaging by the time required for horizontal mixing in the vertical transfer path.

なお、高速撮像の駆動時においても、太陽などの強い光源を撮像した場合に、低感度光電変換素子にスミア電荷が発生することがある。このため、図７に示すように、高速撮像の駆動時に、高感度光電変換素子から読み出した信号電荷を全て水平転送した後に、信号電荷の読み出しを行っていない低感度光電変換素子からなる列についても、スミア掃き出しのために少なくとも１回の転送を行うことが好ましい。こうすることで、低感度光電変換素子に発生したスミア電荷を除去することができるため、画質の劣化を防止することができる。 Even when driving at a high speed, smear charges may be generated in the low-sensitivity photoelectric conversion element when a strong light source such as the sun is imaged. For this reason, as shown in FIG. 7, for high-speed imaging driving, after all the signal charges read from the high-sensitivity photoelectric conversion elements are horizontally transferred, the columns of the low-sensitivity photoelectric conversion elements that have not been read out. However, it is preferable to perform at least one transfer for smear sweeping. By doing so, it is possible to remove smear charges generated in the low-sensitivity photoelectric conversion element, so that it is possible to prevent deterioration in image quality.

本発明の一実施形態に係るデジタルカメラの機能ブロック図である。It is a functional block diagram of the digital camera which concerns on one Embodiment of this invention. 図１に示す固体撮像素子の平面模式図である。It is a plane schematic diagram of the solid-state image sensor shown in FIG. 図２に示した固体撮像素子において、通常撮像の駆動処理での駆動方法を説明するための図である。FIG. 3 is a diagram for explaining a driving method in a normal imaging driving process in the solid-state imaging device shown in FIG. 2. 図３に示す時刻に応じた水平転送パルスφ及び駆動パルのパルス波形を示すタイミングチャートである。FIG. 4 is a timing chart showing a horizontal transfer pulse φ and a pulse waveform of a drive pulse according to the time shown in FIG. 3. 図２に示した固体撮像素子において、高速撮像の駆動処理での駆動方法を説明するための図である。FIG. 3 is a diagram for explaining a driving method in a high-speed imaging driving process in the solid-state imaging device shown in FIG. 2. 本発明の高速撮像の駆動方法と通常撮像の駆動方法とにおいて、撮像処理にかかる時間を示すタイミングチャートである。6 is a timing chart showing the time required for imaging processing in the high-speed imaging driving method and the normal imaging driving method of the present invention. 本発明にかかる駆動方法において、スミア掃き出しを説明するタイミングチャートである。4 is a timing chart for explaining smear sweeping out in the driving method according to the present invention.

Explanation of symbols

３０撮像素子駆動部
１００固体撮像素子
１０１光電変換素子
１０２垂直転送部（ＶＣＣＤ）
１０３水平転送部（ＨＣＣＤ）
１０５ラインメモリ 30 Image sensor drive unit 100 Solid-state image sensor 101 Photoelectric conversion element 102 Vertical transfer unit (VCCD)
103 Horizontal transfer unit (HCCD)
105 line memory

Claims

A semiconductor substrate;
A plurality of photoelectric conversion elements provided in a row direction and a column direction perpendicular to the row direction on the surface of the semiconductor substrate;
A vertical charge transfer unit that transfers signal charges generated in the photoelectric conversion elements in a column direction;
A horizontal charge transfer unit that transfers charges from the vertical charge transfer unit in the row direction,
The plurality of photoelectric conversion elements are arranged in a square lattice form in a row direction and a column direction perpendicular to the first photoelectric conversion element arranged in a square lattice form in the row direction and the column direction perpendicular thereto. The first photoelectric conversion element and the second photoelectric conversion element are shifted in the row direction and the column direction by the same arrangement pitch and by a half of the arrangement pitch. Arranged,
A solid-state imaging device, comprising: a drive unit that controls to read out only one of the signal charges of the first photoelectric conversion element and the second photoelectric conversion element during high-speed imaging processing.

One of the first photoelectric conversion element and the second photoelectric conversion element is a plurality of high sensitivity photoelectric conversion elements that perform relatively high sensitivity photoelectric conversion, and the other is relatively low sensitivity. The solid-state imaging device according to claim 1, wherein the solid-state imaging device is a plurality of low-sensitivity photoelectric conversion elements that perform photoelectric conversion.

The vertical charge transfer unit includes a plurality of vertical charge transfer electrodes arranged in a column direction between the photoelectric conversion elements, and a charge readout region for reading signal charges generated in the photoelectric conversion unit to the vertical charge transfer electrodes The solid-state imaging device according to claim 1, wherein:

4. The solid-state imaging device according to claim 1, further comprising a line memory that temporarily accumulates signal charges transferred from the vertical charge transfer unit. 5.

Red, green, and blue color filters are formed in a Bayer array corresponding to the first photoelectric conversion elements, and red, green, and blue color filters are formed in a Bayer array corresponding to the second photoelectric conversion elements. The solid-state imaging device according to claim 1, wherein the solid-state imaging device is formed.

Controlling so as to perform a process of sweeping out smear charges of a photoelectric conversion element that has not read out a signal charge out of the first photoelectric conversion element and the second photoelectric conversion element during high-speed imaging processing. The solid-state imaging device according to any one of claims 1 to 5.

A semiconductor substrate, a plurality of photoelectric conversion elements provided in a row direction and a column direction perpendicular to the semiconductor substrate surface, and a vertical charge transfer unit that transfers signal charges generated in the photoelectric conversion elements in the column direction; A horizontal charge transfer unit that transfers charges from the vertical charge transfer unit in the row direction, and the plurality of photoelectric conversion elements are arranged in a square lattice pattern in the row direction and the column direction perpendicular thereto. A first photoelectric conversion element; and a second photoelectric conversion element arranged in a square lattice pattern in a row direction and a column direction perpendicular thereto, wherein the first photoelectric conversion element and the second photoelectric conversion element are A method for driving a solid-state imaging device having the same arrangement pitch and being shifted by a half of the arrangement pitch in the row direction and the column direction, wherein the first photoelectric conversion element is used during high-speed imaging processing. And one of the second photoelectric conversion elements The driving method of the solid-state imaging device, characterized in that the driving part is provided for controlling so as to read Mino signal charges.

One of the first photoelectric conversion element and the second photoelectric conversion element is a plurality of high sensitivity photoelectric conversion elements that perform relatively high sensitivity photoelectric conversion, and the other is relatively low sensitivity. The solid-state imaging device driving method according to claim 7, wherein the plurality of low-sensitivity photoelectric conversion elements perform photoelectric conversion, and only signal charges of the plurality of high-sensitivity photoelectric conversion elements are read out during high-speed imaging processing. .

The vertical charge transfer unit includes a plurality of vertical charge transfer electrodes arranged in a column direction between the photoelectric conversion elements, and a charge readout region for reading signal charges generated in the photoelectric conversion unit to the vertical charge transfer electrodes The signal charge of only one of the first photoelectric conversion element and the second photoelectric conversion element is read out to the vertical charge transfer electrode by the readout region during high-speed imaging processing. Item 8. A driving method of a solid-state imaging device according to Item 7.

The solid-state imaging device driving method according to claim 7, further comprising: a line memory that temporarily accumulates signal charges transferred from the vertical charge transfer unit.

Red, green, and blue color filters are formed in a Bayer array corresponding to the first photoelectric conversion elements, and red, green, and blue color filters are formed in a Bayer array corresponding to the second photoelectric conversion elements. The solid-state imaging device driving method according to claim 7, wherein the driving method is formed.

Controlling so as to perform a process of sweeping out smear charges of a photoelectric conversion element that has not read out a signal charge out of the first photoelectric conversion element and the second photoelectric conversion element during high-speed imaging processing. The driving method of the solid-state imaging device according to any one of claims 7 to 11.