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JP2008159823A - Solid-state imaging device and manufacturing method thereof - Google Patents

Solid-state imaging device and manufacturing method thereof Download PDF

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Publication number
JP2008159823A
JP2008159823A JP2006346853A JP2006346853A JP2008159823A JP 2008159823 A JP2008159823 A JP 2008159823A JP 2006346853 A JP2006346853 A JP 2006346853A JP 2006346853 A JP2006346853 A JP 2006346853A JP 2008159823 A JP2008159823 A JP 2008159823A
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imaging device
wiring board
imaging
solid
curved
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JP4969237B2 (en
Inventor
Kazuki Fukada
和岐 深田
Takahiko Yagi
能彦 八木
Michio Yoshino
道朗 吉野
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid-state image sensing device capable of reducing an image-surface curve without fitting a holding material on the rear of an image-sensing element and capable of decreasing the dispersion of the curve of the image-sensing element. <P>SOLUTION: A curved-shaped projecting section 8 having an inner periphery more projected to the side of the image-sensing element 1B than an outer periphery is formed to one surface of a wiring board 6B. The image-sensing element 1B is joined with the projecting section 8, and the image-sensing surface 10 of the image-sensing element 1B is curved. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明はカメラ付き携帯電話装置などに使用される固体撮像装置に関するものである。   The present invention relates to a solid-state imaging device used for a camera-equipped mobile phone device or the like.

図8は特許文献1の固体撮像装置を示す。
MOS型撮像素子やCCD撮像素子などの撮像素子1は、保持材2を介してマウントされている。3はカバーガラスである。この固体撮像装置の前方には、結像レンズ4が配置されている。5は鏡筒である。撮像素子1は保持材2の湾曲した保持面に倣って保持することによって、結像レンズ4の収差によって発生する像面湾曲を低減して、画像の中心部と周辺部とで解像度が異なり、画質が不均一になる撮像特性の劣化を改善している。
FIG. 8 shows a solid-state imaging device disclosed in Patent Document 1.
An image sensor 1 such as a MOS image sensor or a CCD image sensor is mounted via a holding material 2. 3 is a cover glass. An imaging lens 4 is disposed in front of the solid-state imaging device. Reference numeral 5 denotes a lens barrel. The imaging device 1 follows the curved holding surface of the holding material 2 to reduce the curvature of field caused by the aberration of the imaging lens 4, and the resolution is different between the central portion and the peripheral portion of the image. It has improved the deterioration of the imaging characteristics that make the image quality non-uniform.

図9は特許文献2の固体撮像装置を示す。
この固体撮像装置では、撮像素子1Aが配線基板6にフリップチップ実装されている。3Aはカバーガラス、4は結像レンズ、20は封止樹脂である。ここで撮像素子1Aと配線基板6の熱膨張率は、配線基板6の熱膨張率が撮像素子1Aの熱膨張率が大きくなるように材質を選定されており、撮像素子1Aを配線基板6に実装する際には、加熱接合後の冷却作用によって配線基板6の方が収縮率が大きくなり、撮像素子1Aの外側の接合部の間隔が短縮されることで、撮像素子1Aに圧縮力がかかって湾曲する工法を用いて形成されている。
特開2004−63776号公報 特開2004−146633号公報
FIG. 9 shows a solid-state imaging device of Patent Document 2.
In this solid-state imaging device, the imaging element 1A is flip-chip mounted on the wiring board 6. 3A is a cover glass, 4 is an imaging lens, and 20 is a sealing resin. Here, the thermal expansion coefficients of the image pickup device 1A and the wiring board 6 are selected so that the thermal expansion coefficient of the wiring board 6 is larger than that of the image pickup element 1A. At the time of mounting, the shrinkage rate of the wiring board 6 increases due to the cooling action after heat bonding, and the interval between the joint portions outside the image sensor 1A is shortened, so that a compression force is applied to the image sensor 1A. It is formed using a method of bending.
JP 2004-63776 A JP 2004-146633 A

特許文献2のように撮像素子1Aと配線基板6の熱膨張率の違いを適切に選択することによって、特許文献1のように撮像素子1の背面に保持材2を設けなくても像面湾曲を低減することができる。   By appropriately selecting the difference in coefficient of thermal expansion between the image sensor 1A and the wiring board 6 as in Patent Document 2, the curvature of field can be obtained without providing the holding material 2 on the back surface of the image sensor 1 as in Patent Document 1. Can be reduced.

しかし、特許文献2の構成では撮像素子1Aの湾曲のばらつきが大きいという問題がある。
本発明は、撮像素子の背面に保持材を設けなくても像面湾曲を低減することができ、しかも撮像素子の湾曲のばらつきを従来よりも低減できる固体撮像装置を提供することを目的とする。
However, the configuration of Patent Document 2 has a problem that the variation in the curvature of the image sensor 1A is large.
SUMMARY OF THE INVENTION An object of the present invention is to provide a solid-state imaging device that can reduce the curvature of field without providing a holding material on the back surface of the imaging device, and that can reduce the variation in the curvature of the imaging device as compared with the prior art. .

本発明の請求項1記載の固体撮像装置は、配線基板の一方の面に撮像素子を実装し、前記配線基板の他方の面から前記一方の面に向かって入射した光を前記撮像素子で検出する固体撮像装置であって、配線基板の前記一方の面に外周よりも内周が前記撮像素子の側に突出した湾曲形状の突部を設け、前記撮像素子を配線基板の前記突部に接合され前記撮像素子の撮像面が湾曲したことを特徴とする。   The solid-state imaging device according to claim 1 of the present invention mounts an imaging device on one surface of a wiring board, and detects light incident from the other surface of the wiring substrate toward the one surface with the imaging device. A solid-state image pickup device, wherein a curved protrusion having an inner periphery protruding toward the image sensor rather than an outer periphery is provided on the one surface of the wiring board, and the image sensor is joined to the protrusion of the wiring board The imaging surface of the imaging element is curved.

また、本発明の請求項2記載の固体撮像装置の製造方法は、配線基板の一方の面に撮像素子を実装するに際し、撮像素子の撮像面の側に突起電極を形成し、中央が外周よりも窪んだ湾曲部を有したツールの前記湾曲部に、撮像素子の撮像面とは反対側の面を当接させて前記撮像素子を湾曲させた状態で保持し、この湾曲させた状態の前記撮像素子の前記突起電極と、配線基板の前記一方の面に外周よりも内周が前記撮像素子の側に突出した湾曲形状の突部に形成されたランドとを当接させて、前記撮像素子と前記配線基板とを接合した後に、前記撮像素子を前記ツールから取り外すことを特徴とする。   In the method of manufacturing the solid-state imaging device according to claim 2 of the present invention, when mounting the imaging device on one surface of the wiring board, the protruding electrode is formed on the imaging surface side of the imaging device, and the center is from the outer periphery. The curved portion of the tool having a concave curved portion is held in a state where the imaging device is curved by bringing the surface opposite to the imaging surface of the imaging device into contact with the curved portion. The imaging element is brought into contact with the projecting electrode of the imaging element and a land formed on a curved projection having an inner circumference protruding toward the imaging element on the one surface of the wiring board. And the wiring board are bonded to each other, and then the imaging element is detached from the tool.

本発明の請求項3記載の固体撮像装置は、請求項1において、前記配線基板は、前記撮像素子の側の一方の面に形成された前記突部に対応して他方の面には前記撮像素子の側に近づく方向に湾曲した形状の凹部を形成したことを特徴とする。   The solid-state imaging device according to a third aspect of the present invention is the solid-state imaging device according to the first aspect, wherein the wiring board corresponds to the protrusion formed on one surface on the imaging element side and the imaging is on the other surface. A recess having a shape curved in a direction approaching the element side is formed.

また、本発明の請求項4記載の固体撮像装置の製造方法は、配線基板の一方の面に撮像素子を実装するに際し、撮像素子の撮像面の側に突起電極を形成し、平板状に保持した前記配線基板に前記撮像素子をフリップフロップ実装し、撮像素子のフリップフロップ実装された前記配線基板を、成形型に入れて、配線基板と前記撮像素子を前記撮像素子の側に向かって突出するように成形することを特徴とする。   In the method for manufacturing a solid-state imaging device according to claim 4 of the present invention, when mounting the imaging device on one surface of the wiring board, a protruding electrode is formed on the imaging surface side of the imaging device and held in a flat plate shape. The image pickup device is flip-flop mounted on the wiring substrate, the flip-flop mounted wiring substrate of the image pickup device is placed in a mold, and the wiring substrate and the image pickup device protrude toward the image pickup device. It is characterized by shape | molding as follows.

本発明の請求項5記載の固体撮像装置は、請求項1において、前記配線基板は、前記突部の中央に貫通孔または凹部を形成したことを特徴とする。
また、本発明の請求項6記載の固体撮像装置の製造方法は、配線基板の一方の面に撮像素子を実装するに際し、撮像素子の撮像面の側に突起電極を形成し、中央に貫通孔または凹部が形成され平板状に保持した前記配線基板に前記撮像素子をフリップフロップ実装し、撮像素子のフリップフロップ実装された前記配線基板を、成形型に入れて、配線基板と前記撮像素子を前記撮像素子の側に向かって突出するように成形することを特徴とする。
A solid-state imaging device according to a fifth aspect of the present invention is the solid-state imaging device according to the first aspect, wherein the wiring board has a through hole or a recess formed in the center of the protrusion.
According to a sixth aspect of the present invention, when the imaging device is mounted on one surface of the wiring board, the protruding electrode is formed on the imaging surface side of the imaging device, and the through hole is formed in the center. Alternatively, the image pickup device is flip-flop mounted on the wiring board formed with a recess and held in a flat plate shape, and the wiring board mounted with the flip-flop of the image pickup device is placed in a mold, and the wiring board and the image pickup device are It is characterized in that it is shaped so as to protrude toward the image sensor side.

この構成によると、撮像素子の撮像面側を配線基板に形成されている湾曲形状の突部に押し付けて撮像素子を湾曲させて、固体撮像装置と組み合わせて使用する結像レンズの収差によって発生する像面湾曲を低減できる。   According to this configuration, the imaging surface side of the imaging device is pressed against a curved protrusion formed on the wiring board to cause the imaging device to bend, which is caused by the aberration of the imaging lens used in combination with the solid-state imaging device. Field curvature can be reduced.

以下、本発明の各実施の形態を図1〜図7に基づいて説明する。
(実施の形態1)
図1〜図4は実施の形態1を示す。
Embodiments of the present invention will be described below with reference to FIGS.
(Embodiment 1)
1 to 4 show the first embodiment.

図1は本発明の固体撮像装置Aの断面図と背面図を示し、図2は固体撮像装置Aと結像レンズ4とを組み合わせて構成されるカメラの光学系を示している。
MOS型撮像素子やCCD撮像素子などの撮像素子1Bは、配線基板6Bの一方の面にフリップフロップ実装されている。配線基板6Bは基板本体7が透光性材料で構成されており、基板本体7の前記一方の面には、外周よりも内周が撮像素子1Bの側に突出した湾曲形状の突部8が一体に形成されている。また、基板本体7の前記一方の面には、配線パターン9と撮像素子1Bの撮像面10の外側に配置された突起電極11の位置に対応してランド12が形成されている。
FIG. 1 shows a cross-sectional view and a rear view of a solid-state imaging device A of the present invention, and FIG. 2 shows an optical system of a camera configured by combining the solid-state imaging device A and an imaging lens 4.
An image sensor 1B such as a MOS image sensor or a CCD image sensor is flip-flop mounted on one surface of the wiring board 6B. The wiring board 6B has a board body 7 made of a light-transmitting material, and a curved projection 8 having an inner circumference projecting toward the image sensor 1B rather than the outer circumference on the one surface of the board body 7. It is integrally formed. Lands 12 are formed on the one surface of the substrate body 7 corresponding to the positions of the wiring patterns 9 and the protruding electrodes 11 disposed outside the imaging surface 10 of the imaging device 1B.

図3と図4は製造工程を示している。
図3(a)では、撮像素子1Bの撮像面10の外側に位置する電極に突起電極11を形成する。撮像素子1Bはフレキシブルな基板の上に形成されている。
3 and 4 show the manufacturing process.
In FIG. 3A, the protruding electrode 11 is formed on the electrode located outside the imaging surface 10 of the imaging device 1B. The image sensor 1B is formed on a flexible substrate.

図3(b)では、ツール13の湾曲部14に、撮像素子1Bの撮像面10とは反対側の面を当接させて撮像素子1Bを湾曲させた状態で保持する。湾曲部14の形状は中央が外周よりも窪んでいる。ツール13における撮像素子1Bの具体的な保持方法としては、空気吸引による保持を例に挙げることができる。また、ツール13における撮像素子1Bの位置合わせは、図4に示すように位置確認用カメラ15とツール13の間にミラー16を配設し、位置確認用カメラ15で実線位置のミラー16を介してツール13の湾曲部14における撮像素子1Bの左側の位置が規定位置か判定し、位置確認用カメラ15で仮想線位置のミラー16を介してツール13の湾曲部14における撮像素子1Bの右側の位置が規定位置か判定して目的位置に位置合わせする。   In FIG.3 (b), the surface of the imaging device 1B on the opposite side to the imaging surface 10 is brought into contact with the bending portion 14 of the tool 13, and the imaging device 1B is held in a curved state. The center of the curved portion 14 is recessed from the outer periphery. As a specific holding method of the imaging device 1B in the tool 13, holding by air suction can be given as an example. Further, as shown in FIG. 4, the alignment of the image sensor 1B in the tool 13 is performed by arranging a mirror 16 between the position confirmation camera 15 and the tool 13, and the position confirmation camera 15 via the mirror 16 at the solid line position. Then, it is determined whether the left position of the image sensor 1B in the curved portion 14 of the tool 13 is a specified position, and the position confirmation camera 15 passes the mirror 16 at the virtual line position to the right side of the image sensor 1B in the curved portion 14 of the tool 13. It is determined whether the position is a specified position and aligned with the target position.

図3(d)では、ツール13によって撮像素子1Bの突起電極11を、配線基板6Bの基板本体7のランド12に押圧して図4(c)に示すように保持する。なお、この実施の形態では突起電極11とランド12は互いに同一材質の例えば金であって、突起電極11ならびにランド12は、紫外線照射などによって表面が活性化されており、撮像素子1Bの突起電極11をツール13によって配線基板6Bの基板本体7のランド12に押圧して保持することによって、突起電極11とランド12との常温接合が可能である。   In FIG.3 (d), the protruding electrode 11 of the image pick-up element 1B is pressed on the land 12 of the board | substrate body 7 of the wiring board 6B with the tool 13, and is hold | maintained as shown in FIG.4 (c). In this embodiment, the protruding electrode 11 and the land 12 are made of, for example, gold of the same material, and the surface of the protruding electrode 11 and the land 12 is activated by ultraviolet irradiation or the like, and the protruding electrode of the image sensor 1B. 11 is pressed and held on the land 12 of the board body 7 of the wiring board 6B by the tool 13, whereby the bump electrode 11 and the land 12 can be joined at room temperature.

突起電極11とランド12との接合が完了してツール13を取り外して、撮像素子1Bと配線基板6Bの間で撮像素子1Bの撮像面10の周りに封止樹脂20を充填して固化させて組み立てが完了する。   After the joining of the protruding electrode 11 and the land 12 is completed, the tool 13 is removed, and the sealing resin 20 is filled around the imaging surface 10 of the imaging device 1B and solidified between the imaging device 1B and the wiring board 6B. Assembly is complete.

このように、配線基板6Bに形成されている突部8に倣って撮像素子1Bの撮像面10を湾曲させることができるので、固体撮像装置と組み合わせて使用する結像レンズ4の収差を補正する形状の突部8を形成することによって、結像レンズ4の像面湾曲を極めて正確に少ないばらつきで低減できる。また、撮像素子1Bの撮像面10の側とは反対側の面に、湾曲した保持面を有した保持材などを設ける必要もなく、薄型化を実現できる。   As described above, the imaging surface 10 of the imaging device 1B can be curved following the protrusions 8 formed on the wiring board 6B, so that the aberration of the imaging lens 4 used in combination with the solid-state imaging device is corrected. By forming the protruding portion 8 having a shape, the curvature of field of the imaging lens 4 can be reduced with very little variation. In addition, it is not necessary to provide a holding material having a curved holding surface on the surface opposite to the imaging surface 10 side of the image pickup device 1B, and a reduction in thickness can be realized.

(実施の形態2)
図5は実施の形態2を示す。
実施の形態1における配線基板6Bは、基板本体7の前記一方の面に突部8が一体に形成されおり、基板本体7の他方の面で突部8の裏面が面一に形成されていたが、この実施の形態2の配線基板6Cの場合には、基板本体7の一方の面に突部8が一体に形成されおり、突部8の位置に対応して、基板本体7の他方の面で突部8の裏面には、撮像素子1Bの側に近づく方向に湾曲した形状の凹部21が形成されている点が異なっている。その他は実施の形態1と同じである。
(Embodiment 2)
FIG. 5 shows the second embodiment.
In the wiring board 6B according to the first embodiment, the protrusion 8 is integrally formed on the one surface of the substrate body 7, and the back surface of the protrusion 8 is formed flush with the other surface of the substrate body 7. However, in the case of the wiring board 6C according to the second embodiment, the protrusion 8 is integrally formed on one surface of the substrate body 7, and the other of the substrate body 7 corresponds to the position of the protrusion 8. The difference is that a concave portion 21 having a shape curved in a direction approaching the image sensor 1B is formed on the rear surface of the protrusion 8 on the surface. The rest is the same as in the first embodiment.

なお、配線基板6Cは、撮像素子1Bをフリップフロップ実装する前に突部8と凹部21が形成されている。
この場合には、実施の形態1の場合に比べて基板本体7として厚みの薄いものを使用でき、材質が同一の場合には軽量化を実現できる。
Note that the wiring substrate 6C has the protrusions 8 and the recesses 21 before the image pickup device 1B is flip-flop mounted.
In this case, a thinner substrate body 7 can be used than in the case of the first embodiment, and weight reduction can be realized when the material is the same.

(実施の形態3)
図6は実施の形態3を示す。
実施の形態2における配線基板6Cは、撮像素子1Bをフリップフロップ実装する前に突部8と凹部21が形成されていたが、この実施の形態3では撮像素子1Bをフリップフロップ実装した後に成形加工されている。基板本体7としては熱可塑性樹脂を使用した。
(Embodiment 3)
FIG. 6 shows a third embodiment.
The wiring board 6C in the second embodiment has the protrusion 8 and the recess 21 formed before the image pickup device 1B is flip-flop mounted. In the third embodiment, the wiring board 6C is molded after the image pickup device 1B is flip-flop mounted. Has been. A thermoplastic resin was used as the substrate body 7.

図6(a)は撮像素子1Bのフリップフロップ実装の工程を示し、平板状の配線基板6Cに撮像素子1Bがフリップフロップ実装されている。次に、この撮像素子1Bがフリップフロップ実装された平板状の配線基板6Cを、図6(b)に示すように上型22と下型23との間に挟んで、配線基板6Bと前記撮像素子1Bを撮像素子1Bの側に向かって突出するように加熱成形して、図5と同じ形状に仕上げることができる。   FIG. 6A shows a flip-flop mounting process of the image sensor 1B. The image sensor 1B is flip-flop mounted on a flat wiring board 6C. Next, as shown in FIG. 6B, the wiring board 6B and the imaging device are sandwiched between the upper die 22 and the lower die 23 as shown in FIG. 6B. The element 1B can be heat-molded so as to protrude toward the image pickup element 1B, and finished in the same shape as FIG.

この構成によると、図6(b)の成形だけが曲面加工であって、それよりも前工程は平面で撮像素子1Bのフリップフロップ実装などを実行できるので、組み立ての作業性が良好である。   According to this configuration, only the molding shown in FIG. 6B is curved surface processing, and the front-end process can be executed in a plane and the flip-flop mounting of the image sensor 1B can be executed.

(実施の形態4)
図7は実施の形態4を示す。
実施の形態2と実施の形態3において、平板状の配線基板6Cは突部8に貫通孔が開いていなかったが、この実施の形態4では図7(a)(b)に示すように配線基板6Cには突部8の中央に貫通孔24が形成されている。
(Embodiment 4)
FIG. 7 shows a fourth embodiment.
In the second embodiment and the third embodiment, the flat wiring board 6C has no through hole in the protrusion 8, but in this fourth embodiment, the wiring is as shown in FIGS. 7 (a) and 7 (b). A through hole 24 is formed in the center of the protrusion 8 in the substrate 6C.

この場合には、特に実施の形態3のようには撮像素子1Bをフリップフロップ実装した後に成形加工する場合に、成形加工しやすい。ここでは配線基板6Cには突部8に貫通孔24を形成したが、貫通孔24に代わって、配線基板6Cには突部8の中央に凹部を形成しても、同様の効果を期待できる。   In this case, it is easy to perform the molding process particularly when the imaging element 1B is molded after flip-flop mounting as in the third embodiment. Here, the through hole 24 is formed in the protrusion 8 in the wiring substrate 6C. However, the same effect can be expected if a recess is formed in the center of the protrusion 8 in the wiring substrate 6C instead of the through hole 24. .

なお、上記の実施の形態では接合方法が常温接合の場合を例に挙げて説明したが、異方性導電フィルムまたはペーストを使用したACF/ACP ( Anisotropic Conductive Film/Paste ) 接合方法、非導電性フィルム/ペーストを使用したCF/NCP ( Non Conductive Film/Paste ) 接合方法でも同様に実施できる。   In the above embodiment, the case where the bonding method is room temperature bonding has been described as an example, but an ACF / ACP (Anisotropic Conductive Film / Paste) bonding method using an anisotropic conductive film or paste, non-conductive A CF / NCP (Non Conductive Film / Paste) bonding method using a film / paste can be performed in the same manner.

本発明はカメラ付き携帯電話装置などのモバイル機器の小型化に寄与できる。   The present invention can contribute to miniaturization of a mobile device such as a mobile phone device with a camera.

本発明の実施の形態1の固体撮像装置の断面図と背面図Sectional drawing and rear view of the solid-state imaging device of Embodiment 1 of this invention 同実施の形態の固体撮像装置を使用したカメラの光学系の断面図Sectional view of the optical system of the camera using the solid-state imaging device of the embodiment 同実施の形態の製造工程を示す断面図Sectional drawing which shows the manufacturing process of the embodiment 同実施の形態のツールに保持された撮像素子の位置検出工程の断面図Sectional drawing of the position detection process of the image pick-up element hold | maintained at the tool of the embodiment 本発明の実施の形態2の固体撮像装置の断面図Sectional drawing of the solid-state imaging device of Embodiment 2 of this invention 本発明の実施の形態3の固体撮像装置の製造工程を示す断面図Sectional drawing which shows the manufacturing process of the solid-state imaging device of Embodiment 3 of this invention. 本発明の実施の形態4の固体撮像装置の断面図と平面図Sectional drawing and top view of the solid-state imaging device of Embodiment 4 of this invention 従来例の固体撮像装置の断面図Sectional view of a conventional solid-state imaging device 別の従来例の固体撮像装置の断面図Sectional view of another conventional solid-state imaging device

符号の説明Explanation of symbols

A 固体撮像装置
4 結像レンズ
1B 撮像素子
6B 配線基板
7 配線基板6Bの基板本体
8 配線基板6Bの突部
9 配線パターン
10 撮像素子1Bの撮像面
11 突起電極
12 ランド
13 ツール
14 ツール13の湾曲部
20 封止樹脂
A Solid-state imaging device 4 Imaging lens 1B Imaging element 6B Wiring board 7 Substrate body 8 of wiring board 6B Projection 9 of wiring board 6B Wiring pattern 10 Imaging surface 11 of imaging element 1B Projecting electrode 12 Land 13 Tool 14 Curve of tool 13 Part 20 sealing resin

Claims (6)

配線基板の一方の面に撮像素子を実装し、前記配線基板の他方の面から前記一方の面に向かって入射した光を前記撮像素子で検出する固体撮像装置であって、
配線基板の前記一方の面に外周よりも内周が前記撮像素子の側に突出した湾曲形状の突部を設け、
前記撮像素子を配線基板の前記突部に接合され前記撮像素子の撮像面が湾曲した
固体撮像装置。
A solid-state imaging device in which an imaging device is mounted on one surface of a wiring board, and light incident on the one surface from the other surface of the wiring substrate is detected by the imaging device,
Provided on one surface of the wiring board is a curved-shaped protrusion whose inner periphery protrudes toward the image sensor rather than the outer periphery;
A solid-state imaging device in which the imaging element is joined to the protrusion of the wiring board and the imaging surface of the imaging element is curved.
配線基板の一方の面に撮像素子を実装するに際し、
撮像素子の撮像面の側に突起電極を形成し、
中央が外周よりも窪んだ湾曲部を有したツールの前記湾曲部に、撮像素子の撮像面とは反対側の面を当接させて前記撮像素子を湾曲させた状態で保持し、
この湾曲させた状態の前記撮像素子の前記突起電極と、配線基板の前記一方の面に外周よりも内周が前記撮像素子の側に突出した湾曲形状の突部に形成されたランドとを当接させて、前記撮像素子と前記配線基板とを接合した後に、前記撮像素子を前記ツールから取り外す
固体撮像装置の製造方法。
When mounting the image sensor on one side of the wiring board,
A protruding electrode is formed on the imaging surface side of the imaging device,
The curved portion of the tool having a curved portion whose center is recessed from the outer periphery is held in a state where the imaging device is curved by contacting the surface opposite to the imaging surface of the imaging device,
The projecting electrode of the image pickup element in the curved state and the land formed on the one surface of the wiring board on the curved protrusion with the inner periphery protruding toward the image pickup element from the outer periphery. A method for manufacturing a solid-state imaging device in which the imaging device is detached from the tool after the imaging device and the wiring board are bonded together.
前記配線基板は、前記撮像素子の側の一方の面に形成された前記突部に対応して他方の面には前記撮像素子の側に近づく方向に湾曲した形状の凹部を形成した
請求項1記載の固体撮像装置。
The wiring board is formed with a concave portion curved in a direction approaching the imaging element side on the other surface corresponding to the protrusion formed on one surface on the imaging element side. The solid-state imaging device described.
配線基板の一方の面に撮像素子を実装するに際し、
撮像素子の撮像面の側に突起電極を形成し、
平板状に保持した前記配線基板に前記撮像素子をフリップフロップ実装し、
撮像素子のフリップフロップ実装された前記配線基板を、成形型に入れて、配線基板と前記撮像素子を前記撮像素子の側に向かって突出するように成形する
固体撮像装置の製造方法。
When mounting the image sensor on one side of the wiring board,
A protruding electrode is formed on the imaging surface side of the imaging device,
Flip-flop mounting the image sensor on the wiring board held in a flat plate shape,
A method for manufacturing a solid-state imaging device, wherein the wiring board on which the flip-flop of the imaging element is mounted is placed in a molding die, and the wiring board and the imaging element are molded so as to protrude toward the imaging element.
前記配線基板は、前記突部の中央に貫通孔または凹部を形成した
請求項1記載の固体撮像装置。
The solid-state imaging device according to claim 1, wherein the wiring board has a through hole or a recess formed in the center of the protrusion.
配線基板の一方の面に撮像素子を実装するに際し、
撮像素子の撮像面の側に突起電極を形成し、
中央に貫通孔または凹部が形成され平板状に保持した前記配線基板に前記撮像素子をフリップフロップ実装し、
撮像素子のフリップフロップ実装された前記配線基板を、成形型に入れて、配線基板と前記撮像素子を前記撮像素子の側に向かって突出するように成形する
固体撮像装置の製造方法。
When mounting the image sensor on one side of the wiring board,
A protruding electrode is formed on the imaging surface side of the imaging device,
Flip-flop mounting of the imaging element on the wiring board formed in the center with a through hole or recess formed in a flat plate shape,
A method for manufacturing a solid-state imaging device, wherein the wiring board on which the flip-flop of the imaging element is mounted is placed in a molding die, and the wiring board and the imaging element are molded so as to protrude toward the imaging element.
JP2006346853A 2006-12-25 2006-12-25 Solid-state imaging device and manufacturing method thereof Expired - Fee Related JP4969237B2 (en)

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