JP2008159871A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method, capable of stably extruding a processing solution, when extruding the processing solution that remains in a nozzle and a processing solution inlet part connected to the nozzle by means of a gas. <P>SOLUTION: During a period that extruding processing is stopped and chemical processing is executed, an upstream-side valve V1 and a downstream-side valve V2 are closed, and an inter-valve region VR held between the upstream side valve V1 and the downstream-side valve V2 is adjusted to atmospheric pressure P0. After the chemical processing, the downstream-side value V2 is opened prior to the open of the upstream-side valve V1 to start chemical extrusion processing. At this time, pressure applied to remaining chemical is the atmospheric pressure P0, and thereby the remaining chemical will not be extruded. Consequently, the remaining chemical can be prevented from being extruded suddenly at original pressure P1. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor wafer, a glass substrate for photomask, a glass substrate for liquid crystal display, a glass substrate for plasma display, a substrate for FED (Field Emission Display), an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, etc. The present invention relates to a substrate processing apparatus and a substrate processing method for supplying a processing liquid to various substrates (hereinafter simply referred to as “substrates”) and performing wet processing on the substrates.

  Conventionally, as a substrate processing apparatus of this type, a predetermined wet process (chemical process with chemical liquid and rinse process with rinse liquid) is performed on a substrate by discharging a processing liquid such as a chemical liquid or a rinsing liquid from a nozzle toward the substrate. There is a device to apply (see Patent Document 1). In the apparatus described in Patent Document 1, a chemical liquid is introduced into a nozzle through a processing liquid pipe (processing liquid introduction unit) having one end connected to the nozzle, and the chemical liquid is discharged from the nozzle. The rinsing liquid is introduced into the nozzle via the nozzle, and the rinsing liquid is discharged from the nozzle. Therefore, after the chemical solution treatment, the chemical solution remains in the treatment solution piping and the nozzle (hereinafter, the chemical solution remaining in the treatment solution piping and the nozzle is referred to as “residual chemical solution”). And such a residual chemical | medical solution will be discharged | emitted from a nozzle by introduce | transducing a rinse liquid into process liquid piping at the time of a rinse process. Therefore, since the residual chemical solution is discarded together with the rinse solution, the consumption amount of the chemical solution is increased.

  Therefore, in this conventional apparatus, nitrogen gas is introduced into the treatment liquid pipe through a fluid introduction portion provided at the other end of the treatment liquid pipe in order to collect and reuse the remaining chemical liquid after the chemical treatment. Specifically, the fluid introduction part is connected to one end of a nitrogen gas pipe (gas pipe) via a mixing valve (treatment liquid introduction part), and the other end of the nitrogen gas pipe supplies nitrogen gas. The source is connected. A valve (downstream valve) is inserted in the nitrogen gas pipe, and the nitrogen gas from the nitrogen gas supply source is introduced into the processing liquid pipe via the mixing valve by opening the valve. As a result, the residual chemical liquid is pushed out by the nitrogen gas, and the residual chemical liquid is completely discharged from the processing liquid piping and the nozzle.

  In this conventional apparatus, a valve (upstream valve) is inserted in the nitrogen gas pipe at a position upstream of the downstream valve, and the pressure of nitrogen gas flowing toward the downstream valve is controlled. A needle valve (adjustment mechanism) is interposed between the upstream valve and the downstream valve.

Japanese Patent Laying-Open No. 2005-302746 (page 13, page 18, FIG. 3)

  By the way, it is desirable to push out the residual chemical solution with nitrogen gas in a state where the pressure of the nitrogen gas is set to a predetermined pressure. That is, the original pressure (first pressure) of the nitrogen gas supplied from the nitrogen gas supply source is set to a relatively high pressure in order to pump the nitrogen gas from the nitrogen gas supply source to a desired location. Therefore, when introduced into the processing liquid piping without limiting the pressure of the nitrogen gas supplied from the nitrogen gas supply source, the residual chemical liquid is pushed out by the high-pressure nitrogen gas. As a result, (1) the residual chemical liquid is scattered from the nozzle, and the scattered chemical liquid adheres to the substrate, which may cause generation of particles. Further, (2) when the residual chemical solution is pushed out by high-pressure nitrogen gas and supplied to the substrate, the processing time of the substrate with the residual chemical solution varies. Specifically, as a result of the residual chemical liquid being pushed out by the high-pressure nitrogen gas, the flow rate of the chemical liquid flowing through the treatment liquid piping and the nozzle is increased. For this reason, when the residual chemical solution is supplied to the substrate in such a state that the flow rate is increased in this way, the processing time of the substrate with the extruded residual chemical solution may become extremely short. As a result, it has become difficult to perform substrate processing with a residual chemical solution in a desired processing time. Further, (3) a portion of the substrate (nitrogen gas supply site) is dried by vigorously blowing the nitrogen gas discharged from the nozzle onto the substrate. As a result, particles may adhere to the surface area of the dried substrate.

  According to the conventional apparatus, the needle valve is interposed between the upstream valve and the downstream valve in the nitrogen gas pipe. For this reason, it is possible to adjust the original pressure of the nitrogen gas supplied from the nitrogen gas supply source by the needle valve and send it to the processing liquid piping. That is, when the upstream side valve and the downstream side valve are opened and nitrogen gas is fed into the processing liquid piping to push out the remaining chemical solution, the region sandwiched between the needle valve and the downstream side valve (hereinafter referred to as the “downstream side region”). The pressure of the nitrogen gas flowing into the control pressure can be adjusted to a control pressure (second pressure) controlled to a pressure lower than the original pressure.

  On the other hand, when pushing out the residual chemical, the following problems may occur depending on the timing of opening the upstream valve and the downstream valve. That is, when the upstream valve is opened with the downstream valve closed, nitrogen gas supplied from the nitrogen gas supply source flows into the downstream region via the needle valve, and the pressure in the downstream region is controlled. It will rise to the original pressure higher than the pressure. For this reason, when the downstream side valve is opened and the residual chemical solution is pushed out, the residual chemical solution is suddenly pushed out at a high original pressure.

  However, in the conventional apparatus, the opening / closing timing of the upstream side valve and the downstream side valve is not taken into consideration at all, and when the residual chemical solution is pushed out, the residual chemical solution may be pushed out suddenly at a high original pressure as described above. The residual chemical solution could not be pushed out stably. As a result, the above problems (1) to (3) may occur. Such a problem has occurred not only in the chemical liquid remaining in the processing liquid pipe and the nozzle, but also in other processing liquids in general, such as the rinse liquid remaining in the processing liquid pipe and the nozzle.

  The present invention has been made in view of the above problems, and a substrate capable of stably extruding the treatment liquid when extruding the treatment liquid remaining in the treatment liquid introduction portion connected to the nozzle and the nozzle with a gas. An object is to provide a processing apparatus and a substrate processing method.

  The present invention is a substrate processing apparatus that performs wet processing with a first processing liquid on a substrate by discharging the first processing liquid from the nozzle toward the substrate, and is connected to the nozzle in order to achieve the above object. , A processing liquid introduction section for discharging the first processing liquid from the nozzle by introducing the first processing liquid to the nozzle, and a gas whose one end is connected to the processing liquid introduction section and is pumped at the first pressure from the other end Between the treatment liquid introduction part and the upstream valve inserted into the treatment liquid introduction part, the upstream valve inserted in the gas pipe and switching between gas introduction and gas introduction stop toward the treatment liquid introduction part A downstream valve that is inserted into the gas pipe to switch between gas introduction and gas introduction stop toward the processing liquid introduction section, and a downstream valve that is inserted into the gas pipe between the upstream valve and the downstream valve. Pressure of gas flowing towards An adjustment mechanism that adjusts the second pressure lower than the first pressure and higher than the atmospheric pressure, and a gas adjusted to the second pressure by the adjustment mechanism after the wet processing by controlling the opening and closing of the upstream and downstream valves. And a control means for performing an extrusion process for feeding the treatment liquid introduction section and extruding the treatment liquid introduction section and the first treatment liquid remaining in the nozzle from the nozzle, and the control means is located upstream while the extrusion process is stopped. And closing the downstream side valve to stop the gas supply to the processing liquid introduction part and adjusting the pressure in the region between the valves sandwiched between the upstream side valve and the downstream side valve to a pressure lower than the first pressure, It is characterized in that after the wet processing, the downstream side valve and the upstream side valve are opened in this order to perform the extrusion process.

  In addition, the present invention is connected to the nozzle, the processing liquid introduction section for discharging the first processing liquid from the nozzle toward the substrate by introducing the first processing liquid to the nozzle, and one end thereof connected to the processing liquid introduction section. On the other hand, a gas pipe that guides the gas pumped from the other end to the processing liquid introduction section to the processing liquid introduction section, and an upstream valve that is inserted into the gas pipe and switches between gas introduction toward the processing liquid introduction section and gas introduction stoppage. A downstream valve that is inserted into the gas pipe between the processing liquid introduction unit and the upstream valve and switches between gas introduction and gas introduction stop toward the processing liquid introduction unit, and an upstream valve and a downstream valve A substrate processing apparatus provided with an adjustment mechanism that adjusts the pressure of the gas that is inserted into the gas pipe between the first and second gas flows toward the downstream valve to a second pressure that is lower than the first pressure and higher than the atmospheric pressure. The first processing liquid is applied to the substrate In order to achieve the above object, the substrate processing method performs a wet processing step, and after the wet processing step, the gas adjusted to the second pressure by the adjusting mechanism is sent to the processing liquid introducing portion, and the processing liquid introducing portion and The method further includes an extruding process for extruding the first processing liquid remaining in the nozzle from the nozzle, and while the execution of the extruding process is stopped, the upstream side and downstream side valves are closed to supply the gas to the processing liquid introducing unit. Is adjusted to a pressure lower than the first pressure between the upstream valve and the downstream valve, and when the extrusion process is performed after the wet process, the downstream side It is characterized by opening in order of valve and upstream valve.

  In the invention configured as described above, after the wet processing with the first processing liquid is performed on the substrate, the first processing liquid (hereinafter referred to as “residual processing liquid”) remaining in the processing liquid introduction unit and the nozzle as follows. ") Is extruded from the nozzle. That is, while the extrusion process is stopped, the upstream valve and the downstream valve are closed, and the pressure in the region between the valves sandwiched between the upstream valve and the downstream valve is pumped from the other end of the gas pipe. The pressure is adjusted to be lower than the gas pressure (first pressure). Then, the downstream valve is opened to perform the extrusion process. At this time, the pressure applied to the residual processing liquid is lower than the first pressure. For this reason, it is possible to reliably prevent the residual processing liquid from being suddenly pushed out by the first pressure. Then, the upstream valve opens after the downstream valve, and the gas being pumped at the first pressure through the upstream valve is lower than the first pressure and higher than the atmospheric pressure by the adjusting mechanism. Adjusted to pressure. As a result, the extrusion process can be performed stably. Therefore, the problems (1) to (3) described in the section “Problems to be Solved by the Invention” can be reliably solved.

  Here, it is preferable to adjust the pressure in the inter-valve region to atmospheric pressure or higher while the extrusion process is stopped. Thereby, while the extrusion process is stopped, the pressure in the inter-valve region is adjusted to a value equal to or higher than the atmospheric pressure and lower than the first pressure. As a result, the pressure on the residual processing liquid is atmospheric pressure, whereas the pressure in the region between the valves is equal to or higher than atmospheric pressure. Accordingly, when the downstream side valve is opened to perform the extrusion process, the pressure in the inter-valve region is always equal to or higher than the pressure applied to the residual processing liquid. For this reason, it can prevent reliably that a residual process liquid flows into the area | region between valves.

  Further, it is preferable that the upstream side valve is closed after the extrusion process, and the downstream side valve is closed after waiting for the pressure in the region between the valves to become atmospheric pressure. Thereby, the pressure in the region between the valves can always be adjusted to atmospheric pressure, and a stable extrusion process can be performed.

  In addition, the apparatus further includes a first processing liquid supply source that supplies the first processing liquid to the processing liquid introduction unit, and supplies the first processing liquid supplied from the first processing liquid supply source to the nozzle at a predetermined flow rate to perform wet processing. The substrate processing apparatus that executes the above is preferably configured as follows. That is, the adjustment mechanism adjusts the gas flow flowing through the downstream valve so that the flow rate of the first treatment liquid pushed out from the nozzle during the extrusion process is equal to the flow rate of the first treatment liquid during the wet treatment, and introduces the treatment liquid. The part can be configured to discharge the first processing liquid pushed out from the processing liquid introduction part and the nozzle by the extrusion process toward the substrate. Thus, the upstream side valve and the downstream side valve are closed while the wet process is executed by the first process liquid supplied from the first process liquid supply source. And after a wet process, it opens in order of a downstream valve | bulb and an upstream valve | bulb, and an extrusion process is performed. At this time, in the extrusion process, the residual processing liquid (first processing liquid) is stably extruded from the nozzle and supplied to the substrate at a flow rate equivalent to the flow rate of the first processing liquid discharged from the nozzle during the wet processing. Accordingly, during the wet process and the subsequent extrusion process, the first process liquid is substantially continuously supplied to the substrate at the same flow rate, and the substrate process using the first process liquid is continuously performed. . For this reason, when the substrate is processed with the first processing liquid in the wet processing and the subsequent extrusion processing, the substrate processing can be reliably performed in a desired processing time.

  In addition, after the extrusion processing, the upstream side valve and the downstream side valve are closed by the control means, and then the processing liquid introduction unit discharges the second processing liquid from the nozzle by guiding the second processing liquid different from the first processing liquid to the nozzle. You may let them. After the extrusion process, all of the first processing liquid is discharged from the processing liquid introduction part and the nozzle. For this reason, even if the second processing liquid different from the first processing liquid is introduced into the nozzle from the processing liquid introducing portion after the upstream valve and the downstream valve are closed after the extrusion process, the first processing liquid is added to the second processing liquid. Can be prevented from being mixed.

  Further, in the substrate processing apparatus in which the first processing liquid is a chemical liquid, since the liquid other than the chemical liquid is not mixed in the chemical liquid extruded from the nozzle by the execution of the extrusion process, the extruded chemical liquid is collected. By reusing, the consumption of the chemical solution can be reduced.

  According to this invention, the pressure in the region between the valves while the extrusion process is stopped is adjusted to a pressure lower than the pressure of the gas (first pressure) fed from the other end of the gas pipe. Then, the downstream valve is opened to perform the extrusion process. At this time, the pressure applied to the residual processing liquid is lower than the first pressure, and it is ensured that the residual processing liquid is suddenly pushed out by the first pressure. Can be prevented. Then, the upstream valve opens after the downstream valve, and the gas being pumped at the first pressure through the upstream valve is lower than the first pressure and higher than the atmospheric pressure by the adjusting mechanism. Since the pressure is adjusted, the extrusion process can be performed stably.

  FIG. 1 is a view showing an embodiment of a substrate processing apparatus according to the present invention. FIG. 2 is a block diagram showing a main control configuration of the substrate processing apparatus of FIG. This substrate processing apparatus performs a drying process for drying a substrate W after performing a chemical process using a chemical such as an etchant and a rinse process using a rinse such as DIW (= deionized water) on a substrate W such as a semiconductor wafer. It is a device to execute. In this embodiment, the chemical treatment corresponds to the “wet treatment” of the present invention. The apparatus includes a processing chamber 1 having a processing space therein, a spin chuck 2 that rotates the substrate W held in the processing chamber 1 in a substantially horizontal posture, and an upper surface of the substrate W held by the spin chuck 2. A chemical nozzle 3 for supplying chemical liquid to the substrate W and a rinse nozzle 4 for supplying rinsing liquid to the upper surface of the substrate W are provided. A splash guard 5 is provided around the spin chuck 2 for receiving a chemical liquid and a rinsing liquid scattered from the substrate W. Hereinafter, the chemical solution and the rinse solution are collectively referred to as “treatment solution”.

  The spin chuck 2 has a rotation support shaft 21 connected to a rotation shaft of a chuck rotation mechanism 22 including a motor, and can rotate around a vertical axis by driving the chuck rotation mechanism 22. A disc-shaped spin base 23 is integrally connected to the upper end portion of the rotation support shaft 21. Therefore, the spin base 23 rotates around the vertical axis by driving the chuck rotating mechanism 22 in accordance with an operation command from the control unit 8 (corresponding to “control means” of the present invention) that controls the entire apparatus.

  Near the periphery of the spin base 23, a plurality of chuck pins 24 for holding the periphery of the substrate W are provided upright. Each chuck pin 24 is configured to be switchable between a pressing state in which the outer peripheral end surface of the substrate W is pressed and a released state in which the chuck pin 24 is separated from the outer peripheral end surface of the substrate W. When the substrate W is delivered to the spin base 23, the plurality of chuck pins 24 are set in a released state, and when the chemical treatment, the rinsing process and the drying process are performed on the substrate W, a plurality of chuck pins 24 are released. The chuck pin 24 is pressed. By setting the chuck pin 24 in the pressed state, the substrate W is held in a substantially horizontal posture.

  Further, the rotation support shaft 21 is a hollow shaft, and a processing liquid pipe 25 is inserted through the rotation shaft 21. A lower surface processing nozzle 6 that functions as a “nozzle” of the present invention is connected to one end (tip) of the processing liquid pipe 25. Further, a gap between the inner wall surface of the rotation spindle 21 and the outer wall surface of the processing liquid pipe 25 forms a cylindrical gas supply path 26. The gas supply path 26 is connected to a gas supply source for supplying nitrogen gas via a valve 27, and supplies nitrogen gas to a space formed between the lower surface of the substrate W and the opposing surface of the spin base 23. be able to. Such a gas supply source is provided as a factory-side utility, for example, in a factory where a substrate processing apparatus is installed. In this embodiment, nitrogen gas is supplied from a gas supply source, but air, other inert gas, or the like may be discharged.

The other end of the processing liquid pipe 25 is connected to the outlet of the mixing unit 31. The mixing unit 31 has three input ports: a chemical liquid port 311, a rinse liquid port 312, and a nitrogen gas port 313. A chemical liquid supply source that supplies chemical liquid is connected to the chemical liquid port 311 via a valve 32, and a rinse liquid supply source that supplies rinsing liquid is connected to the rinse liquid port 312 via a valve 33. The nitrogen gas port 313 is connected to one end of the gas pipe 7. The other end of the gas pipe 7 is connected to a gas supply source, and nitrogen gas is pumped from the gas supply source toward the mixing unit 31. The original pressure of the gas pumped from the gas supply source (corresponding to the “first pressure” in the present invention) is set to a relatively high pressure (for example, 3 kg / cm ² ).

  An upstream valve V <b> 1 (open / close valve) that switches between gas introduction and gas introduction stop from the gas supply source to the mixing unit 31 is inserted in the gas pipe 7 on the upstream side (the other end side). In addition, the gas pipe 7 has a downstream valve V2 (open / close valve) for switching the introduction and stop of gas introduction toward the mixing unit 31 on the downstream side (one end side) of the mixing unit 31 and the upstream valve V1. It is inserted between. The opening / closing control of the valves 27, 32 and 33 and the upstream and downstream valves V 1, V 2 are all controlled by the control unit 8.

  A needle valve NV for adjusting the pressure of nitrogen gas flowing from the gas supply source toward the downstream valve V2 is interposed between the upstream valve V1 and the downstream valve V2. By adjusting the opening degree of the needle valve NV, the pressure of the nitrogen gas flowing toward the downstream valve V2 is controlled to a pressure lower than the original pressure and higher than the atmospheric pressure (“ Corresponding to the “second pressure”). Furthermore, a flow meter 71 is inserted in the gas pipe 7 between the needle valve NV and the downstream valve V2, and the flow rate of nitrogen gas flowing toward the downstream valve V2 can be measured. Thus, in this embodiment, the needle valve NV functions as the “adjustment mechanism” of the present invention.

  With such a configuration, when chemical processing is performed on the lower surface of the substrate W, the control unit 8 closes the valve 33, the upstream side and downstream side valves V1, V2, and opens the valve 32, so that the mixing unit 31 has a chemical solution. Is introduced to the lower surface processing nozzle 6 through the processing liquid pipe 25. As a result, the chemical liquid is discharged from the lower surface processing nozzle 6, and the chemical liquid is supplied to the lower surface of the substrate W. Further, when the rinsing process is performed on the lower surface of the substrate W, the control unit 8 closes the valve 32, the upstream and downstream valves V 1 and V 2, and opens the valve 33, so that the rinsing liquid is introduced into the mixing unit 31. Then, it is guided to the lower surface processing nozzle 6 through the processing liquid pipe 25. As a result, the rinse liquid is discharged from the lower surface processing nozzle 6, and the rinse liquid is supplied to the lower surface of the substrate W. Furthermore, the control unit 8 can perform the extrusion process by closing the valves 32 and 33 and opening the upstream and downstream valves V1 and V2. That is, it is possible to feed nitrogen gas into the mixing unit 31 and push out the processing liquid (residual processing liquid) remaining in the mixing unit 31, the processing liquid piping 25 and the lower surface processing nozzle 6 from the lower surface processing nozzle 6 with nitrogen gas. Thus, in this embodiment, the processing liquid piping 25 and the mixing unit 31 function as the “processing liquid introduction part” of the present invention.

  Above the spin chuck 2, there are a chemical nozzle 3 for supplying a chemical liquid to the upper surface of the substrate W held by the spin chuck 2 and a rinse nozzle 4 for supplying a rinse liquid to the upper surface of the substrate W. Has been placed. The chemical liquid from the chemical liquid nozzle 3 and the rinsing liquid from the rinse nozzle 4 are fixedly supplied on the upper surface of the substrate W by the chemical liquid nozzle 3 and the rinse nozzle 4 being fixedly arranged with respect to the spin chuck 2. It may be supplied to a position (for example, near the rotation center of the substrate W). Further, the chemical solution and the rinsing solution are moved back and forth within a predetermined range above the spin chuck 2 by the chemical solution nozzle 3 and the rinse nozzle 4, so that the supply position on the upper surface of the substrate W reaches from the rotation center of the substrate W to the peripheral portion. It may be supplied so as to reciprocate (scan) within the range.

  A receiving member 41 is provided around the spin chuck 2. Cylindrical partition walls 41 a and 41 b are erected on the receiving member 41. The partition wall 41 a forms a first drain tank 42 so as to surround the periphery of the spin chuck 2. A second drainage tank 43 is formed between the partition wall 41a and the partition wall 41b. The first drain tank 42 and the second drain tank 43 are connected to different drains. In this embodiment, the first drain tank 42 is connected to the waste drain and guides the used rinse liquid to the waste drain. Further, the second drain tank 43 is connected to the waste drain, and the used chemical liquid can be guided to the recovery drain. The chemical solution guided to the recovery drain is reused.

  In addition, a splash guard 5 is provided above the drainage tanks 42 and 43. The splash guard 5 has a substantially rotationally symmetric shape with respect to the rotation axis (vertical axis) of the spin chuck 2, and is provided so as to be movable up and down with respect to the rotation axis of the spin chuck 2. On the inner surface of the upper end portion of the splash guard 5, a guide groove 5a having a square cross section is formed in an annular shape. In addition, an inclined guide portion 5 b made of an inclined surface that is inclined outward and downward is formed on the inner surface of the lower end portion of the guard 5. A partition wall housing groove 5c for receiving the partition wall 41a of the receiving member 41 is formed near the upper end of the inclined guide portion 5b.

  The splash guard 5 is connected to the guard lifting / lowering mechanism 51 and operates the guard lifting / lowering mechanism 51 in accordance with an operation command from the control unit 8 so that the splash guard 5 can be lifted / lowered with respect to the spin chuck 2. ing. In this embodiment, the splash guard 5 is positioned at a recovery position (position shown in FIG. 1) opposite to the outer peripheral end surface of the substrate W held by the spin chuck 2 when the chemical solution is supplied. Thereby, the chemical liquid scattered from the rotating substrate W is received by the inclined guide portion 5 b and collected in the second drainage tank 43. Further, the splash guard 5 is positioned at a disposal position where the guide groove 5 a faces the outer peripheral end surface of the substrate W held by the spin chuck 2 when the rinsing liquid is supplied. Thereby, the rinse liquid splashed from the rotating substrate W is received by the guide groove 5 a and collected in the first drainage tank 42.

  Next, the operation of the substrate processing apparatus configured as described above will be described in detail with reference to FIGS. FIG. 3 is a flowchart showing the operation of the substrate processing apparatus of FIG. In this apparatus, when an unprocessed substrate W is carried into the processing chamber 1, the control unit 8 controls each part of the apparatus to execute a chemical liquid process, a chemical liquid extrusion process, a rinse process, a rinse liquid extrusion process, and a drying process. (Step S1). A program (recipe) for performing such a series of processes is stored in a memory (storage means) 8 a (FIG. 2) provided in the control unit 8. All the valves 27, 32, 33, V1, and V2 are closed.

  When the unprocessed substrate W is held on the spin chuck 2, the control unit 8 drives the guard lifting / lowering mechanism 51 to place the splash guard 5 at the recovery position (step S2). Further, the control unit 8 drives the chuck rotating mechanism 22 to rotate the spin chuck 2. Then, chemical treatment is performed on the substrate W. First, the control unit 8 opens the valve 32 and introduces a predetermined amount of chemical liquid from the chemical liquid supply source to the mixing unit 31. Thus, the chemical solution is discharged from the lower surface processing nozzle 6 toward the lower surface of the substrate W that is rotationally driven. Further, the chemical liquid is discharged from the chemical liquid nozzle 3 toward the upper surface of the substrate W. The discharged chemical liquid is supplied to the lower surface and the upper surface of the substrate W, and the lower surface and the upper surface of the substrate W are processed with the chemical liquid (step S3; chemical liquid processing step). The chemical liquid shaken sideways from the rotationally driven substrate W is collected in the second drainage tank 43 through the splash guard 5 and reused through the collection drain. That is, as will be described later, since there is no other liquid such as a rinsing liquid in the mixing unit 31, the processing liquid pipe 25, and the lower surface processing nozzle 6 before the chemical liquid is introduced, the second drainage tank 43. It is possible to prevent other liquids such as a rinsing liquid from being mixed into the chemical liquid collected in the process. As a result, the chemical solution can be reused.

  When a predetermined chemical solution processing time elapses, the valve 32 is closed, the introduction of the chemical solution into the mixing unit 31 is stopped, and the supply of the chemical solution to the lower surface of the substrate W is stopped. Further, the supply of the chemical solution to the upper surface of the substrate W is stopped. At this time, the chemical liquid remains in the mixing unit 31, the processing liquid pipe 25, and the lower surface processing nozzle 6. Here, when the remaining chemical liquid (residual chemical liquid) is left without being pushed out from the lower surface processing nozzle 6, the residual chemical liquid is removed from the lower surface processing nozzle 6 together with the rinsing liquid when performing the rinsing process subsequent to the chemical liquid processing. It will be discharged. And since the rinse liquid is mixed in the discharged residual chemical | medical solution, it cannot be reused and it is discarded. Therefore, the consumption of the chemical solution increases. For this reason, after the chemical solution treatment, a chemical solution extrusion process is performed in order to extrude the residual chemical solution from the lower surface treatment nozzle 6 (step S4; extrusion process step).

  FIG. 4 is a flowchart of the chemical solution extrusion process, and FIG. 5 is a schematic diagram showing a pressure state in the gas pipe. While the extrusion process is stopped and the chemical process is being performed, the upstream side and downstream side valves V1 and V2 are closed, the supply of nitrogen gas to the mixing unit 31 is stopped, and the upstream side valve V1 and the downstream side The pressure in the inter-valve region VR sandwiched between the valves V2 is the atmospheric pressure P0. That is, at the time when the chemical processing is executed and the chemical supply is stopped (timing T0), the pressure in the inter-valve region VR is adjusted to a pressure lower than the original pressure P1 (high pressure) of the gas fed from the gas supply source. ing. And the start process of an extrusion process is performed in order to start a chemical | medical solution extrusion process. That is, prior to opening the upstream valve V1, the downstream valve V2 is opened at timing T1 (step S11). At this time, since the pressure applied to the remaining chemical liquid is the atmospheric pressure P0, the residual chemical liquid is not pushed out from the lower surface processing nozzle 6. For this reason, it is possible to prevent the residual chemical liquid from being suddenly pushed out at the original pressure P1.

  Next, at the timing T2, the upstream valve V1 is opened following the downstream valve V2 (step S12). Thereby, the nitrogen gas that is pumped at the original pressure P1 through the upstream valve V1 and is directed to the downstream valve V2 is controlled by the needle valve NV to a pressure lower than the original pressure P1 and higher than the atmospheric pressure P0. The pressure is adjusted to P2. Therefore, the residual chemical solution is pushed out by the nitrogen gas adjusted to the control pressure P2, and the extrusion process is executed stably.

  On the other hand, if the upstream valve V1 is opened prior to the opening of the downstream valve V2 at the start of the extrusion process, the following problem occurs.

  FIG. 6 is a schematic diagram showing a pressure state in the gas pipe when the upstream valve is opened earlier than the downstream valve at the start of the extrusion process. When the upstream side valve V1 is opened prior to the opening of the downstream side valve V2 from the closed state of the upstream side and downstream side valves V1, V2 (FIG. 6A), the original pressure is passed through the upstream side valve V1. Nitrogen gas pumped by P1 flows one after another into a region (downstream region) sandwiched between the needle valve NV and the downstream valve V2 via the needle valve NV. As a result, the pressure in the inter-valve region VR including the downstream region rises to the original pressure P1 (FIG. 6B). When the pressure in the downstream region rises to the original pressure P1, the needle valve NV can control the pressure of nitrogen gas at the start of the extrusion process (when the downstream valve V2 is opened). It becomes impossible. Therefore, as soon as the downstream valve V2 is opened to start the extrusion process, the residual chemical liquid is suddenly pushed out at the original pressure P1 (FIG. 6C). As a result, the problems (1) to (3) described in the section “Problems to be Solved by the Invention” occur.

  Returning to FIG. 4 and FIG. 5, an embodiment of the present invention will be described. After the valves are opened in the order of the downstream valve V2 and the upstream valve V1, the extrusion process is performed. However, the residual chemical liquid pushed out from the lower surface processing nozzle 6 is supplied to the lower surface of the substrate W, and the rotation of the substrate W is performed. It is shaken off to the side under the centrifugal force. And it is collect | recovered by the 2nd drainage tank 43 via the splash guard 5, and is reused through a collection | recovery drain. That is, since the remaining chemical liquid is pushed out by nitrogen gas, other liquid such as a rinse liquid is not mixed in the chemical liquid collected in the second drainage tank 43. For this reason, the consumption of a chemical | medical solution can be reduced by reusing the collect | recovered chemical | medical solution. Thus, in this embodiment, the second drainage tank 43 functions as the “recovery means” of the present invention.

  Here, since the pushed-out residual chemical solution is collected through the lower surface of the substrate W, the lower surface of the substrate W is treated with the residual chemical solution. That is, the lower surface of the substrate W is processed by the chemical liquid supplied from the chemical liquid supply source to the substrate W during the chemical liquid processing and the chemical liquid (residual chemical liquid) pushed out from the lower surface processing nozzle 6 and supplied to the substrate W during the extrusion processing. The Rukoto. Accordingly, the processing time for processing the lower surface of the substrate W with the chemical solution is the sum of the processing time during the chemical processing and the processing time during the extrusion processing. Therefore, in order to execute the substrate processing with the chemical solution in a desired processing time in the chemical processing and the subsequent extrusion processing, it is preferable to set the control pressure P2 in the needle valve NV as follows. That is, the flow of gas flowing in the downstream valve V2 is adjusted so that the flow rate of the remaining chemical liquid pushed out from the lower surface processing nozzle 6 at the time of extrusion processing in the needle valve NV is equal to the flow rate of the chemical liquid discharged from the lower surface processing nozzle 6 at the time of chemical liquid processing. It is preferable to adjust. Thereby, while the chemical solution process and the subsequent extrusion process are executed, the chemical solution is substantially supplied to the lower surface of the substrate W at the same flow rate, and the substrate process using the chemical solution is continuously performed. For this reason, when performing the substrate processing with the chemical solution in the chemical processing and the subsequent extrusion processing, the substrate processing can be surely executed in a desired processing time.

  When a predetermined extrusion processing time set in advance at timing T3 has elapsed (YES in step S13), stop processing after the extrusion processing step is executed. Such an extrusion processing time is set in advance in a recipe or the like in consideration of the time required to push out all of the residual chemical liquid from the lower surface processing nozzle 6 using the nitrogen gas adjusted to the control pressure P2 by the needle valve NV. Therefore, after the extrusion process, no liquid such as a chemical solution exists in the mixing unit 31, the processing liquid pipe 25, and the lower surface processing nozzle 6.

  In the stop process after the extrusion process, the upstream valve V1 is closed at timing T4 prior to the closing of the downstream valve V2 (step S14). As a result, the pumping of nitrogen gas from the other end side (nitrogen gas supply source side) of the gas pipe 7 to the inter-valve region VR is stopped, and the pressure in the inter-valve region VR gradually decreases toward the atmospheric pressure P0. To go. Then, after waiting for the pressure in the inter-valve region VR to become the atmospheric pressure P0, the downstream valve V2 is closed following the upstream valve V1 at timing T5 (step S15). As a result, the pressure in the inter-valve region VR is maintained at the atmospheric pressure P0, and a series of chemical solution extrusion processing is completed. That is, it is equivalent to the pressure state in the inter-valve region VR at the timing T0. Therefore, as will be described later, when the rinse liquid extrusion process is started next after the rinse process, by opening the valves in the order of the downstream valve V2 and the upstream valve V1, the mixing unit 31, the process liquid pipe 25 and The rinsing liquid (residual rinsing liquid) remaining in the lower surface processing nozzle 6 can be stably pushed out by nitrogen gas. Thus, in the chemical liquid extrusion process, the chemical liquid corresponds to the “first processing liquid” of the present invention.

  On the other hand, if the downstream valve V2 is closed prior to closing the upstream valve V1 when stopping after the extrusion process, the following problem occurs.

  FIG. 7 is a schematic diagram showing a pressure state in the gas pipe when the downstream valve is closed before the upstream valve when stopping after the extrusion process. When the downstream side valve V2 is closed prior to the closing of the upstream side valve V1 from the opened state of the upstream side and downstream side valves V1, V2 (FIG. 7A), the original pressure is passed through the upstream side valve V1. Nitrogen gas pumped by P1 flows one after another into a region (downstream region) sandwiched between the needle valve NV and the downstream valve V2 via the needle valve NV. As a result, the pressure in the inter-valve region VR including the downstream region rises to the original pressure P1 (FIG. 7B). Thereafter, when the upstream valve V1 is closed following the downstream valve V2, the pressure in the inter-valve region VR is maintained at the original pressure P1 (FIG. 7C). When the pressure in the downstream region in the inter-valve region VR is maintained at the original pressure P1, the pressure of nitrogen gas at the start of the next extrusion process (when the downstream valve V2 is opened) is changed to the needle. The valve NV cannot be controlled. Therefore, as soon as the downstream valve V2 is opened to start the next extrusion process, the residual processing liquid is suddenly pushed out at the original pressure P1. As a result, the problems (1) to (3) described in the section “Problems to be Solved by the Invention” occur.

  Returning to FIG. 4 and FIG. 5, an embodiment of the present invention will be described. After completion of the chemical solution extrusion process, the control unit 8 drives the guard lifting mechanism 51 to place the splash guard 5 at the disposal position (step S5). Then, a rinsing process is performed on the substrate W. That is, the control unit 8 opens the valve 33 and introduces the rinse liquid from the rinse liquid supply source to the mixing unit 31. Thus, the rinse liquid is discharged from the lower surface processing nozzle 6 toward the lower surface of the substrate W that is rotationally driven. Further, a rinse liquid is discharged from the rinse nozzle 4 toward the upper surface of the substrate W. The discharged rinse liquid is supplied to the lower surface and the upper surface of the substrate W, and the lower surface and the upper surface of the substrate W are processed with the rinse liquid (step S6; rinse processing step). The rinse liquid shaken sideways from the rotationally driven substrate W contains chemicals and contaminants adhering to the substrate W, and thus is collected in the first drainage tank 42 via the splash guard 5 and disposed of the waste drain. After being discarded.

  When a predetermined rinsing time elapses, the valve 33 is closed, the introduction of the rinsing liquid into the mixing unit 31 is stopped, and the supply of the rinsing liquid to the lower surface of the substrate W is stopped. Further, the supply of the rinse liquid to the upper surface of the substrate W is stopped. At this time, the rinsing liquid remains in the mixing unit 31, the processing liquid pipe 25, and the lower surface processing nozzle 6. For this reason, after the rinsing process, a rinsing liquid extrusion process is performed in order to push out the remaining rinsing liquid (residual rinsing liquid) from the lower surface processing nozzle 6 (step S7; extrusion process). The opening / closing order of the upstream and downstream valves V1, V2 in the rinse liquid extrusion process is the same as that in the chemical liquid extrusion process shown in FIG. For this reason, it is possible to prevent the residual rinse liquid from being suddenly pushed out at the original pressure P1 at the start of the rinse liquid extrusion process, and the extrusion process is executed stably.

  Thus, after the rinsing liquid extrusion process is completed, no liquid such as a rinsing liquid exists in the mixing unit 31, the processing liquid pipe 25, and the lower surface processing nozzle 6. Therefore, for example, even when the chemical solution is introduced from the chemical supply source into the mixing unit 31 when the chemical treatment is performed on the unprocessed substrate W next time, the liquid such as the rinse solution is prevented from being mixed into the chemical solution. be able to. As a result, all the chemicals introduced into the mixing unit 31 and discharged from the lower surface processing nozzle 6 can be reused.

  Next, the control unit 8 increases the rotation speed of the motor of the chuck rotation mechanism 22 to rotate the substrate W at a high speed. Thereby, the drying process (spin drying) of the substrate W is executed (step S8). Then, after the drying process, the rotation of the substrate W is stopped, and the processed substrate W is unloaded from the processing chamber 1 (step S9).

  As described above, according to this embodiment, the upstream valve V1 and the downstream valve V2 are closed while the extrusion process is stopped, and the pressure in the inter-valve region VR is pumped from the other end of the gas pipe 7. It is adjusted to a pressure lower than the original pressure P1 (first pressure) of the nitrogen gas. Then, the downstream valve V2 is opened to perform the extrusion process. At this point, the pressure applied to the residual processing liquid is lower than the original pressure. For this reason, it is possible to reliably prevent the residual treatment liquid from being suddenly pushed out at the original pressure P1. Then, the upstream valve V1 opens after the downstream valve V2, and the nitrogen gas pumped at the original pressure through the upstream valve V1 is lower than the original pressure by the needle valve NV and is lower than the atmospheric pressure. It is adjusted to a high control pressure P2 (second pressure). As a result, the extrusion process can be performed stably.

  Therefore, the problems (1) to (3) described in the section “Problems to be Solved by the Invention” can be reliably solved. That is, (1) it is possible to prevent the residual processing liquid from splashing from the lower surface processing nozzle 6 and to prevent particles from adhering to the substrate W. Further, (2) when the residual processing liquid is pushed out by high-pressure (original pressure) nitrogen gas and supplied to the substrate W, the processing time of the substrate W by the residual processing liquid varies. On the other hand, according to this embodiment, since the residual processing liquid is extruded and supplied to the substrate W by the nitrogen gas adjusted to a control pressure (second pressure) lower than the original pressure P1, the desired processing time can be obtained. Substrate processing with the residual processing liquid can be executed. Further, (3) when nitrogen gas discharged from the lower surface processing nozzle 6 is blown onto the substrate W vigorously, a part of the substrate (nitrogen gas supply site) is dried, and particles are formed on the surface area of the dried substrate W. May adhere. On the other hand, according to this embodiment, since the residual processing liquid is pushed out by the nitrogen gas adjusted to the control pressure P2, it is possible to prevent such particle adhesion due to drying of the substrate W.

  Further, according to this embodiment, the valve closing timing is controlled so that the upstream valve V1 is closed after the extrusion process, and the downstream valve V2 is closed after the pressure in the inter-valve region VR reaches the atmospheric pressure P0. Therefore, the pressure in the inter-valve region VR can always be adjusted to the atmospheric pressure P0, and a stable extrusion process can be performed.

  In addition, according to this embodiment, after the upstream side valve V1 and the downstream side valve V2 are closed after the extrusion process of the chemical liquid, the rinse liquid, which is a processing liquid different from the chemical liquid, is guided to the lower surface processing nozzle 6. It is discharged from the lower surface processing nozzle 6. After the chemical liquid extrusion process, all of the residual chemical liquid is discharged from the mixing unit 31, the processing liquid pipe 25, and the lower surface processing nozzle 6. For this reason, even if the rinsing liquid is introduced into the mixing unit 31 after the upstream valve V1 and the downstream valve V2 are closed after the extrusion process of the chemical liquid, it is possible to prevent the residual chemical liquid from being mixed into the rinsing liquid. Therefore, it is possible to reduce the consumption of the chemical liquid by avoiding the chemical liquid from being discarded together with the rinse liquid. Thus, when the rinse liquid is guided to the lower surface processing nozzle 6 after the extrusion process of the chemical liquid, the rinse liquid corresponds to the “second processing liquid” of the present invention.

  The present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, in the above-described embodiment, after the extrusion process is stopped by closing the upstream valve V1, and further waiting for the pressure in the inter-valve region VR to become atmospheric pressure and then closing the downstream valve V2. The pressure in the inter-valve region VR is atmospheric pressure, but the pressure in the inter-valve region VR while the extrusion process is stopped is not limited to this. For example, after the upstream valve V1 is closed, the downstream valve V2 is closed without waiting for the pressure in the inter-valve region VR to become atmospheric pressure so that the pressure in the inter-valve region VR is equal to or higher than the atmospheric pressure. You may adjust to a value lower than 1st pressure. Thereby, the pressure with respect to the residual treatment liquid is atmospheric pressure, whereas the pressure in the inter-valve region VR is equal to or higher than atmospheric pressure. Therefore, when the downstream valve V2 is opened to perform the extrusion process, the pressure in the inter-valve region VR is always equal to or higher than the pressure applied to the residual processing liquid. For this reason, it can prevent reliably that a residual process liquid flows in into the area | region VR between valves.

  In the above-described embodiment, after the upstream side valve V1 and the downstream side valve V2 are closed after the extrusion process of the chemical liquid, the rinsing liquid (corresponding to the “second processing liquid” of the present invention) is treated as the lower surface. Although the rinse liquid is discharged from the lower surface processing nozzle 6 by being guided to the processing nozzle 6, the present invention is not limited to this. For example, after the upstream side valve V1 and the downstream side valve V2 are closed after the extrusion process of the chemical liquid, the second chemical liquid different from the chemical liquid is guided to the lower surface processing nozzle 6 as the “second processing liquid” of the present invention. The second chemical liquid may be discharged from the lower surface processing nozzle 6. Even if it does in this way, it can prevent that liquids other than a 2nd chemical | medical solution mix in a 2nd chemical | medical solution. In this case, the guide part and the drainage tank of the splash guard 5 may be further increased by one, and the chemical liquid, the second chemical liquid, and the rinse liquid may be separated and collected in dedicated drainage tanks.

  In the above embodiment, the lower surface processing nozzle 6 functions as the “nozzle” of the present invention. However, the upper surface processing nozzle that discharges the processing liquid toward the upper surface of the substrate W functions as the “nozzle” of the present invention. May be.

  The present invention relates to a semiconductor wafer, a glass substrate for photomask, a glass substrate for liquid crystal display, a glass substrate for plasma display, a substrate for FED (Field Emission Display), a substrate for optical disk, a substrate for magnetic disk, a substrate for magneto-optical disk, etc. The present invention can be applied to a substrate processing apparatus and a substrate processing method that perform wet processing using a processing liquid by discharging a first processing liquid from a nozzle toward the substrate over the entire substrate.

It is a figure which shows one Embodiment of the substrate processing apparatus concerning this invention. It is a block diagram which shows the main control structures of the substrate processing apparatus of FIG. It is a flowchart which shows operation | movement of the substrate processing apparatus of FIG. It is a flowchart of a chemical | medical solution extrusion process. It is a schematic diagram which shows the pressure state in gas piping. It is a schematic diagram which shows the pressure state in gas piping at the time of opening an upstream valve earlier than a downstream valve at the time of the extrusion process start. It is a schematic diagram which shows the pressure state in gas piping at the time of closing a downstream valve earlier than an upstream valve at the time of the stop after an extrusion process.

Explanation of symbols

6 ... Bottom treatment nozzle (nozzle)
7 ... Gas piping 8 ... Control unit (control means)
25 ... Processing liquid piping (processing liquid introduction part)
31 ... Mixing unit (treatment liquid introduction part)
NV ... Needle valve (adjustment mechanism)
V1 ... Upstream valve V2 Downstream valve VR ... Inter-valve region 43 ... Second drainage tank (recovery means)

Claims (7)

In the substrate processing apparatus for performing wet processing with the first processing liquid on the substrate by discharging the first processing liquid from the nozzle toward the substrate,
A treatment liquid introduction section connected to the nozzle and for discharging the first treatment liquid from the nozzle by guiding the first treatment liquid to the nozzle;
A gas pipe having one end connected to the processing liquid introduction part and guiding a gas pumped at a first pressure from the other end to the processing liquid introduction part;
An upstream valve that is inserted into the gas pipe and switches between gas introduction and gas introduction stop toward the treatment liquid introduction unit;
A downstream valve that is inserted into the gas pipe between the processing liquid introduction part and the upstream valve and switches gas introduction and gas introduction stop toward the treatment liquid introduction part;
A second pressure that is lower than the first pressure and higher than the atmospheric pressure is a pressure of a gas that is inserted in the gas pipe between the upstream valve and the downstream valve and flows toward the downstream valve. An adjustment mechanism to adjust to,
After the wet processing by controlling the opening and closing of the upstream and downstream valves, the gas adjusted to the second pressure by the adjusting mechanism is sent to the processing liquid introducing section and remains in the processing liquid introducing section and the nozzle. Control means for performing an extrusion process for extruding the first treatment liquid from the nozzle,
While the extrusion process is stopped, the control means closes the upstream side and downstream side valves to stop the gas supply to the processing liquid introduction unit, and sandwiches the upstream side valve and the downstream side valve. Adjusting the pressure in the inter-valve region to a pressure lower than the first pressure, and opening the downstream valve and the upstream valve in the order after the wet processing to perform the extrusion processing. Substrate processing apparatus.   The substrate processing apparatus according to claim 1, wherein the control unit adjusts the pressure in the inter-valve region to an atmospheric pressure or higher while the extrusion process is stopped.   The substrate processing apparatus according to claim 2, wherein the control unit closes the upstream side valve after the extrusion process, and further closes the downstream side valve after waiting for the pressure in the region between the valves to become atmospheric pressure. The apparatus further includes a first processing liquid supply source that supplies the first processing liquid to the processing liquid introduction unit, and supplies the first processing liquid supplied from the first processing liquid supply source to the nozzle at a predetermined flow rate. The substrate processing apparatus according to claim 1, wherein the wet processing is performed.
The adjusting mechanism adjusts a gas flow flowing through the downstream valve so that a flow rate of the first processing liquid pushed out from the nozzle during the extrusion process is equal to a flow rate of the first processing liquid during the wet processing. And
The substrate processing apparatus, wherein the processing liquid introduction unit discharges the first processing liquid pushed out from the processing liquid introduction unit and the nozzle by the extrusion process toward the substrate.   After the extrusion process, the control unit closes the upstream side valve and the downstream side valve, and then the processing liquid introduction unit guides the second processing liquid different from the first processing liquid to the nozzle, thereby causing the second processing liquid to flow. The substrate processing apparatus according to claim 1, wherein the liquid is discharged from the nozzle. The substrate processing apparatus according to claim 1, wherein the first processing liquid is a chemical liquid.
A substrate processing apparatus, further comprising a recovery unit that recovers the first processing liquid pushed out from the nozzle by the execution of the extrusion process, and that reuses the first processing liquid recovered by the recovery unit. A nozzle, a treatment liquid introduction section for discharging the first treatment liquid from the nozzle toward the substrate by introducing the first treatment liquid to the nozzle, and one other end connected to the treatment liquid introduction section A gas pipe that guides the gas pumped at the first pressure from the side end to the processing liquid introduction part, and an upstream side that is inserted in the gas pipe and switches between gas introduction and gas introduction stop toward the processing liquid introduction part A valve, a downstream valve that is inserted in the gas pipe between the processing liquid introduction part and the upstream valve, and switches between gas introduction and gas introduction stop toward the processing liquid introduction part, and the upstream side Adjustment that adjusts the pressure of the gas that is inserted in the gas pipe between the valve and the downstream valve and flows toward the downstream valve to a second pressure that is lower than the first pressure and higher than the atmospheric pressure. With mechanism Using a plate processing apparatus, a substrate processing method for performing a wet process by the first processing solution to the substrate,
After the wet processing step, the gas adjusted to the second pressure by the adjusting mechanism is sent to the processing liquid introduction section, and the first processing liquid remaining in the processing liquid introduction section and the nozzle is pushed out from the nozzle. The method further includes a process of performing processing.
While the execution of the extrusion process is stopped, the upstream side and downstream side valves are closed to stop the gas supply to the processing liquid introduction part and are sandwiched between the upstream side valve and the downstream side valve. Adjusting the pressure in the region between the valves to a pressure lower than the first pressure,
A substrate processing method comprising: opening the downstream side valve and the upstream side valve in order in performing the extrusion processing step after the wet processing step.

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