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JP2008158017A - Electrode for producing domain-inverted structure, method for producing electrode, apparatus for producing domain-inverted structure, and method for producing domain-inverted structure - Google Patents

Electrode for producing domain-inverted structure, method for producing electrode, apparatus for producing domain-inverted structure, and method for producing domain-inverted structure Download PDF

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JP2008158017A
JP2008158017A JP2006343730A JP2006343730A JP2008158017A JP 2008158017 A JP2008158017 A JP 2008158017A JP 2006343730 A JP2006343730 A JP 2006343730A JP 2006343730 A JP2006343730 A JP 2006343730A JP 2008158017 A JP2008158017 A JP 2008158017A
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Yasuhiro Sato
康弘 佐藤
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Ricoh Co Ltd
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  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

【課題】 広い範囲にわたって均一な周期的分極反転領域を容易に形成することの可能な分極反転構造作製用の電極を提供する。
【解決手段】 非線形光学効果を持つ誘電体基板1に対し、対向する2つの面にそれぞれ配置される電極(2,3)であって、対向する2つの面にそれぞれ配置される各電極(2,3)のうちの少なくとも一方の電極(2)は、誘電体基板に電場を加えることで分極方向を反転させる分極反転構造を作製するための所定の電極パターンを有し、導電性の微粒子5を含む材料が用いられることを特徴としている。
【選択図】 図1
PROBLEM TO BE SOLVED: To provide an electrode for producing a domain inversion structure capable of easily forming a uniform periodic domain inversion region over a wide range.
SOLUTION: Electrodes (2, 3) respectively disposed on two opposing surfaces with respect to a dielectric substrate 1 having a nonlinear optical effect, each electrode (2) disposed on each of the two opposing surfaces. , 3) has at least one electrode (2) having a predetermined electrode pattern for producing a domain-inverted structure in which the polarization direction is inverted by applying an electric field to the dielectric substrate, and the conductive fine particles 5 It is characterized in that a material containing is used.
[Selection] Figure 1

Description

本発明は、分極反転構造作製用の電極および電極の作製方法および分極反転構造の作製装置および分極反転構造の作製方法に関する。   The present invention relates to an electrode for producing a domain-inverted structure, a method for producing the electrode, an apparatus for producing a domain-inverted structure, and a method for producing a domain-inverted structure.

LiNbOやLiTiO等の強誘電体結晶は、非線形光学効果を持つことからレーザー光の波長変換素子などに利用されている。特に、分極方向を周期的に反転させることで擬似位相整合(QPM)条件を満たすようにした分極反転構造をもつ光学素子(波長変換素子)は、広い波長範囲のレーザー光に対して第二高調波発生(SHG)や光パラメトリック発振(OPO)を行うことができる。 Ferroelectric crystals such as LiNbO 3 and LiTiO 3 have a non-linear optical effect and are used for laser light wavelength conversion elements. In particular, an optical element (wavelength conversion element) having a polarization inversion structure that satisfies the quasi phase matching (QPM) condition by periodically inverting the polarization direction is a second harmonic with respect to laser light in a wide wavelength range. Wave generation (SHG) and optical parametric oscillation (OPO) can be performed.

この波長変換素子の形態としては、基板表面付近で幅数μm程度の領域を分極反転させて用いる導波路型と、基板の厚さ方向全体にわたって分極反転させて基板の断面全体を利用するバルク型とが検討されている。導波路型は、数μm程度の狭い導波路領域に光を集中させているため比較的低いエネルギーの入射レーザー光を高効率で波長変換することが可能である。一方、バルク型は、導波路型に比べて大きいビーム径に対して波長変換を行えるので、高いエネルギーのレーザー光を入射させて高い出力光を得ることが可能である。また、バルク型はアライメントも容易である。   As a form of this wavelength conversion element, there are a waveguide type in which a region having a width of about several μm is inverted in the vicinity of the substrate surface, and a bulk type in which the entire cross section of the substrate is used by inversion throughout the thickness direction of the substrate Are being considered. In the waveguide type, since light is concentrated in a narrow waveguide region of about several μm, it is possible to convert the wavelength of incident laser light having a relatively low energy with high efficiency. On the other hand, the bulk type can perform wavelength conversion with respect to a beam diameter larger than that of the waveguide type. Therefore, it is possible to obtain a high output light by entering a high-energy laser beam. The bulk type is also easy to align.

これらの波長変換素子の作製において、導波路型は誘電体基板の表面付近だけを分極反転させればよいため比較的簡単であるが、バルク型はビームが通過する範囲が数10μm〜と広く、基板の厚さ方向も均一に分極反転させる必要があるため容易ではない。   In the production of these wavelength conversion elements, the waveguide type is relatively simple because only the vicinity of the surface of the dielectric substrate needs to be inverted, but the bulk type has a wide beam passing range of several tens of μm, Since it is necessary to reverse the polarization in the thickness direction of the substrate also, it is not easy.

バルク型の波長変換素子の作製は、主に分極方向がそろった基板の両面(+Z面と−Z面、または+C面と−C面と呼ばれる)に所定の電極パターンを形成し、電圧を印加することで電極にはさまれた部分の分極方向を反転させることで行われている。   The bulk-type wavelength conversion element is manufactured by forming a predetermined electrode pattern on both surfaces (called + Z plane and -Z plane, or + C plane and -C plane) of a substrate having a uniform polarization direction, and applying a voltage. This is done by reversing the polarization direction of the portion sandwiched between the electrodes.

しかし、波長変換効率の高い素子を作製するためには、設計値に対して高い精度で反転領域を作製しなければならない。特にバルク型では導波路型より大きい入射ビーム径を想定しているため、厚い基板を広い範囲にわたって均一に分極反転させる必要がある。これらの課題に対してさまざまな作製方法が検討されている。   However, in order to fabricate an element with high wavelength conversion efficiency, the inversion region must be fabricated with high accuracy with respect to the design value. In particular, since the bulk type assumes a larger incident beam diameter than the waveguide type, it is necessary to invert the polarization of a thick substrate uniformly over a wide range. Various manufacturing methods have been studied for these problems.

特許文献1には、+Z面表面の結晶性を劣化させることにより不要な部分の分極反転発生を抑制し、短周期の分極反転を形成しやすくする方法が示されている。また、特許文献2には、分極反転のための電場を印加するための+Z面側の電極を、目的とする周期より広い周期の複数のセグメントに分けて、個別に電場を印加することで微細な周期の分極反転構造を作製する方法が示されている。また、特許文献3には、所定のパターンを持つ電極が形成された+Z面側を真空にしておくことで電極間の放電を防ぎ、−Z面側は大気圧にしてコロナ帯電させて電場を印加することで微細周期の分極反転構造を作製する方法が示されている。   Patent Document 1 discloses a method in which the occurrence of polarization reversal of unnecessary portions is suppressed by degrading the crystallinity of the surface of the + Z plane so that short-period polarization reversal can be easily formed. Further, Patent Document 2 discloses that a + Z plane electrode for applying an electric field for polarization reversal is divided into a plurality of segments having a period wider than a target period, and an electric field is individually applied to finely divide the electrode. A method for producing a domain-inverted structure with a simple period is shown. In Patent Document 3, the + Z plane side on which an electrode having a predetermined pattern is vacuumed to prevent discharge between the electrodes, and the −Z plane side is set to atmospheric pressure and corona charged to generate an electric field. A method for producing a domain-inverted structure with a fine period by applying is shown.

しかしながら、上述した分極反転構造の作製方法を用いた場合でも、広範囲にわたって均一な分極反転領域を形成するのは容易ではない。分極反転領域は+電極の下に均一に発生するのではなく、+電極の下にまばらに形成された核となる反転領域が印加時間とともにZ面内方向,−Z面方向に成長していくことが実験により観測されている。いったん核が形成された部分は電荷が集中しやすくなるため、先に核が形成された部分が時間とともに広がってしまい、結果として最初に核が形成された部分の周辺だけが分極反転しているような状態になる。したがって、いかに核形成を均一に行うかが広い面積にわたって均一な分極反転領域を形成するために重要である。   However, even when the above-described method for producing a domain-inverted structure is used, it is not easy to form a domain-inverted region that is uniform over a wide range. The domain-inverted region does not occur uniformly under the + electrode, but the domain-inverted region sparsely formed under the + electrode grows in the Z-plane direction and −Z-plane direction with the application time. This has been observed experimentally. Once the nuclei are formed, the charge tends to concentrate, so the part where the nuclei were first formed spreads over time, and as a result, only the periphery of the part where the nuclei were first formed is inverted. It becomes a state like this. Therefore, how to perform nucleation uniformly is important for forming a uniform domain-inverted region over a wide area.

この問題に対して、特許文献4には、電極パターン端部を微細な屈曲形状とすることで、核となる分極反転領域を形成しやすくすることが示されている。しかしながら、SHGによる可視,紫外光発生用の素子では、分極反転の周期が数μm程度になるため、パターン端部の構造作製に非常に微細な加工が必要になり電極パターンの作製が困難になるという問題があった。
特開2000−147584号公報 特開2003−307758号公報 特開平7−72521号公報 特開2003−5236号公報
In order to solve this problem, Patent Document 4 shows that a domain-inverted region serving as a nucleus can be easily formed by forming the end portion of the electrode pattern into a fine bent shape. However, in the element for generating visible and ultraviolet light by SHG, since the period of polarization inversion is about several μm, it is very difficult to fabricate the structure of the pattern end, making it difficult to produce the electrode pattern. There was a problem.
JP 2000-147484 A JP 2003-307758 A JP-A-7-72521 JP 2003-5236 A

本発明は、上述したような課題を解決するためのものであって、広い範囲にわたって均一な周期的分極反転領域を容易に形成することの可能な分極反転構造作製用の電極および電極の作製方法および分極反転構造の作製装置および分極反転構造の作製方法を提供することを目的としている。   The present invention is intended to solve the above-described problems, and an electrode for producing a domain-inverted structure and an electrode production method capable of easily forming a uniform periodic domain-inverted region over a wide range It is another object of the present invention to provide a device for manufacturing a domain-inverted structure and a method for manufacturing a domain-inverted structure.

上記目的を達成するために、請求項1記載の発明は、非線形光学効果を持つ誘電体基板に対し、対向する2つの面にそれぞれ配置される電極であって、対向する2つの面にそれぞれ配置される各電極のうちの少なくとも一方の電極は、誘電体基板に電場を加えることで分極方向を反転させる分極反転構造を作製するための所定の電極パターンを有し、導電性の微粒子を含む材料が用いられることを特徴としている。   In order to achieve the above object, the invention according to claim 1 is an electrode disposed on two opposing surfaces of a dielectric substrate having a nonlinear optical effect, and is disposed on each of the two opposing surfaces. At least one of the electrodes to be formed has a predetermined electrode pattern for producing a polarization reversal structure that reverses the polarization direction by applying an electric field to the dielectric substrate, and includes a conductive fine particle Is used.

また、請求項2記載の発明は、請求項1記載の電極において、前記導電性の微粒子は、大きさが50nm〜200nmの範囲であることを特徴としている。   According to a second aspect of the present invention, in the electrode according to the first aspect, the conductive fine particles have a size in the range of 50 nm to 200 nm.

また、請求項3記載の発明は、請求項1または請求項2に記載の分極反転構造作製用の電極において、前記導電性の微粒子は針状の構造を有していることを特徴としている。   According to a third aspect of the present invention, in the electrode for producing a domain-inverted structure according to the first or second aspect, the conductive fine particles have a needle-like structure.

また、請求項4記載の発明は、非線形光学効果を持つ誘電体基板に分極反転構造を作製するための所定の電極パターンを有する電極の作製方法であって、前記誘電体基板の表面に絶縁体材料で溝を作製し、該溝を導電性の微粒子を含む材料で埋め込んで、前記電極パターンを形成することを特徴としている。   According to a fourth aspect of the present invention, there is provided a method for producing an electrode having a predetermined electrode pattern for producing a domain-inverted structure on a dielectric substrate having a nonlinear optical effect, wherein an insulator is provided on the surface of the dielectric substrate. A groove is made of a material, and the electrode pattern is formed by filling the groove with a material containing conductive fine particles.

また、請求項5記載の発明は、非線形光学効果を持つ誘電体基板に分極反転構造を作製するための所定の電極パターンを有する電極の作製方法であって、導電性の微粒子を含む感光性の樹脂を誘電体基板上に成膜し、導電性の微粒子を含む感光性の樹脂をフォトリソグラフィーにより加工して電極パターンを形成することを特徴としている。   The invention according to claim 5 is a method for producing an electrode having a predetermined electrode pattern for producing a domain-inverted structure on a dielectric substrate having a nonlinear optical effect, wherein the photosensitive substrate contains conductive fine particles. A resin film is formed on a dielectric substrate, and a photosensitive resin containing conductive fine particles is processed by photolithography to form an electrode pattern.

また、請求項6記載の発明は、請求項1乃至請求項3のいずれかに記載の分極反転構造作製用の電極を用いて、非線形光学効果を持つ誘電体基板に分極反転構造を作製することを特徴とする分極反転構造の作製装置である。   According to a sixth aspect of the present invention, a domain-inverted structure is fabricated on a dielectric substrate having a nonlinear optical effect by using the domain-inverted structure fabrication electrode according to any one of the first to third aspects. Is a device for manufacturing a domain-inverted structure.

また、請求項7記載の発明は、請求項6記載の分極反転構造の作製装置において、前記誘電体基板に電場を印加中に前記誘電体基板を加熱する加熱手段をさらに有していることを特徴としている。   The invention according to claim 7 is the apparatus for producing a domain-inverted structure according to claim 6, further comprising a heating means for heating the dielectric substrate while an electric field is applied to the dielectric substrate. It is a feature.

また、請求項8記載の発明は、請求項6記載の分極反転構造の作製装置において、前記誘電体基板に電場を印加中に前記誘電体基板に紫外線を照射する紫外線照射手段をさらに有していることを特徴としている。   The invention described in claim 8 is the apparatus for producing a domain-inverted structure according to claim 6, further comprising ultraviolet irradiation means for irradiating the dielectric substrate with ultraviolet rays while applying an electric field to the dielectric substrate. It is characterized by being.

また、請求項9記載の発明は、請求項1乃至請求項3のいずれかに記載の分極反転構造作製用の電極を用いて、非線形光学効果を持つ誘電体基板に分極反転構造を作製することを特徴とする分極反転構造の作製方法である。   According to a ninth aspect of the present invention, a domain-inverted structure is fabricated on a dielectric substrate having a nonlinear optical effect by using the domain-inverted structure fabrication electrode according to any one of the first to third aspects. A method for producing a domain-inverted structure characterized by the following.

請求項1乃至請求項3記載の発明によれば、非線形光学効果を持つ誘電体基板に対し、対向する2つの面にそれぞれ配置される電極であって、対向する2つの面にそれぞれ配置される各電極のうちの少なくとも一方の電極は、誘電体基板に電場を加えることで分極方向を反転させる分極反転構造を作製するための所定の電極パターンを有し、導電性の微粒子を含む材料が用いられるので、分極反転の核形成を促進し、広い範囲にわたって均一な核形成を行うことができ、これにより、広い範囲にわたって均一な分極反転構造(周期的分極反転領域)を容易に形成することができる。   According to the first to third aspects of the present invention, the electrodes are disposed on the two opposing surfaces of the dielectric substrate having the nonlinear optical effect, and are disposed on the two opposing surfaces, respectively. At least one of the electrodes has a predetermined electrode pattern for producing a polarization reversal structure that reverses the polarization direction by applying an electric field to the dielectric substrate, and a material containing conductive fine particles is used. Therefore, nucleation of domain inversion can be promoted and uniform nucleation can be performed over a wide range, and thereby a uniform domain inversion structure (periodic domain inversion region) can be easily formed over a wide range. it can.

特に、請求項3記載の発明では、請求項1または請求項2に記載の分極反転構造作製用の電極において、前記導電性の微粒子は針状の構造を有しているので、混合する微粒子の量を減らした場合でも材料内で均一に電荷を移動させることができて、核形成密度の調整が容易になる。すなわち、分極反転の核が形成される密度を低くした場合でも、均一な分極反転構造を形成することができる。   In particular, in the invention according to claim 3, in the electrode for producing a domain-inverted structure according to claim 1 or 2, the conductive fine particles have a needle-like structure. Even when the amount is reduced, the charge can be moved uniformly in the material, and the nucleation density can be easily adjusted. That is, even when the density at which the domain-inverted nuclei are formed is lowered, a uniform domain-inverted structure can be formed.

また、請求項4記載の発明によれば、非線形光学効果を持つ誘電体基板に分極反転構造を作製するための所定の電極パターンを有する電極の作製方法であって、前記誘電体基板の表面に絶縁体材料で溝を作製し、該溝を導電性の微粒子を含む材料で埋め込んで、前記電極パターンを形成するので、均一性の高い分極反転領域が形成できる分極反転構造作製用の電極の電極パターンの作製に従来のフォトリソグラフィー技術を利用でき、電極パターンの形成を容易(簡便)に行うことができる。   According to a fourth aspect of the present invention, there is provided a method for producing an electrode having a predetermined electrode pattern for producing a domain-inverted structure on a dielectric substrate having a nonlinear optical effect, wherein the electrode has a surface on the surface of the dielectric substrate. An electrode of an electrode for producing a domain-inverted structure in which a highly uniform domain-inverted region can be formed by forming a groove with an insulator material and embedding the groove with a material containing conductive fine particles to form the electrode pattern. A conventional photolithography technique can be used for the production of the pattern, and the electrode pattern can be formed easily (simplely).

また、請求項5記載の発明によれば、非線形光学効果を持つ誘電体基板に分極反転構造を作製するための所定の電極パターンを有する電極の作製方法であって、導電性の微粒子を含む感光性の樹脂を誘電体基板上に成膜し、導電性の微粒子を含む感光性の樹脂をフォトリソグラフィーにより加工して電極パターンを形成するので、均一性の高い分極反転領域が形成できる分極反転構造作製用の電極の電極パターンの作製をフォトリソグラフィーのみで行うことができ、電極パターンの形成を容易(簡便)に行うことができる。   According to a fifth aspect of the present invention, there is provided a method for producing an electrode having a predetermined electrode pattern for producing a domain-inverted structure on a dielectric substrate having a non-linear optical effect, wherein the photosensitive substrate contains conductive fine particles. Inverted structure that can form highly uniform domain-inverted regions by forming an electrode pattern by forming a conductive resin film on a dielectric substrate and processing the photosensitive resin containing conductive fine particles by photolithography The electrode pattern of the electrode for production can be produced only by photolithography, and the electrode pattern can be formed easily (simplely).

また、請求項6乃至請求項9記載の発明によれば、請求項1乃至請求項3のいずれかに記載の分極反転構造作製用の電極を用いて、非線形光学効果を持つ誘電体基板に分極反転構造を作製するので、広い範囲にわたって均一な核形成を行うことができ、これにより、広い範囲にわたってムラの少ない均一な分極反転構造を容易に作製することが可能になる。   Further, according to the invention described in claims 6 to 9, the electrode for polarization inversion structure fabrication according to any one of claims 1 to 3 is used to polarize a dielectric substrate having a nonlinear optical effect. Since the inversion structure is manufactured, uniform nucleation can be performed over a wide range, and thus, a uniform domain inversion structure with less unevenness over a wide range can be easily manufactured.

特に、請求項7記載の発明では、請求項6記載の分極反転構造の作製装置において、前記誘電体基板に電場を印加中に前記誘電体基板を加熱する加熱手段をさらに有しており、加熱により分極反転に必要な電界強度を低下させることができるので、厚い誘電体基板に対する分極反転構造の作製が容易になる。   Particularly, in the invention according to claim 7, in the apparatus for manufacturing a domain-inverted structure according to claim 6, the apparatus further includes a heating unit that heats the dielectric substrate while applying an electric field to the dielectric substrate. As a result, the electric field strength necessary for the polarization inversion can be reduced, so that the polarization inversion structure for the thick dielectric substrate can be easily manufactured.

また、請求項8記載の発明では、請求項6記載の分極反転構造の作製装置において、前記誘電体基板に電場を印加中に前記誘電体基板に紫外線を照射する紫外線照射手段をさらに有しており、紫外線照射により分極反転に必要な電界強度を低下させることができるので、厚い誘電体基板に対する分極反転構造の作製が容易になる。
The invention according to claim 8 is the apparatus for producing a domain-inverted structure according to claim 6, further comprising ultraviolet irradiation means for irradiating the dielectric substrate with ultraviolet rays while applying an electric field to the dielectric substrate. In addition, since the electric field intensity required for polarization reversal can be reduced by ultraviolet irradiation, it is easy to produce a polarization reversal structure for a thick dielectric substrate.

以下、本発明の実施形態を図面に基づいて説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

本発明は、非線形光学効果を持つ誘電体基板に対し、対向する2つの面にそれぞれ配置される電極であって、対向する2つの面にそれぞれ配置される各電極のうちの少なくとも一方の電極は、誘電体基板に電場を加えることで分極方向を反転させる分極反転構造を作製するための所定の電極パターンを有し、導電性の微粒子を含む材料が用いられることを特徴としている。   The present invention relates to a dielectric substrate having a nonlinear optical effect, which is an electrode disposed on each of two opposing surfaces, and at least one of the electrodes disposed on each of the two opposing surfaces is A material having a predetermined electrode pattern for producing a polarization inversion structure that inverts the polarization direction by applying an electric field to the dielectric substrate and containing conductive fine particles is used.

ここで、導電性微粒子としては、銀(Ag)などが用いられ、前記導電性の微粒子は、大きさが50nm〜200nmの範囲である。また、導電性の微粒子を含む材料としては、導電性の樹脂,接着剤等がある。これらの材料では導電性の微粒子を介して電流が流れる。分極反転構造作製用の電極材料としてこのようなものを用いた場合、導電性微粒子が誘電体基板に接触している点に電荷が集中し分極反転の核が形成されやすくなる。導電性微粒子と誘電体基板表面の接触点は電極の形成された範囲に均等に分布しているため、電極の形成された範囲内では多くの場所で核形成が行われやすくなり、結果として、電極パターンに沿ったムラの少ない均一な分極反転領域が形成できるようになる。   Here, silver (Ag) or the like is used as the conductive fine particles, and the conductive fine particles have a size in the range of 50 nm to 200 nm. Examples of the material containing conductive fine particles include a conductive resin and an adhesive. In these materials, current flows through the conductive fine particles. When such a material is used as an electrode material for producing a domain-inverted structure, charges are concentrated at the point where the conductive fine particles are in contact with the dielectric substrate, and a domain-inverted nucleus is easily formed. Since the contact points between the conductive fine particles and the surface of the dielectric substrate are evenly distributed in the range in which the electrodes are formed, nucleation is likely to occur in many places within the range in which the electrodes are formed. A uniform domain-inverted region with little unevenness along the electrode pattern can be formed.

すなわち、本発明によれば、非線形光学効果を持つ誘電体基板に対し、対向する2つの面にそれぞれ配置される各電極のうちの少なくとも一方の電極は、誘電体基板に電場を加えることで分極方向を反転させる分極反転構造を作製するための所定の電極パターンを有し、導電性の微粒子を含む材料が用いられるので、分極反転の核形成を促進し、広い範囲にわたって均一な核形成を行うことができ、これにより、広い範囲にわたって均一な分極反転構造(周期的分極反転領域)を容易に形成することができる。   That is, according to the present invention, with respect to a dielectric substrate having a nonlinear optical effect, at least one of the electrodes respectively disposed on two opposing surfaces is polarized by applying an electric field to the dielectric substrate. Since a material having a predetermined electrode pattern for producing a domain-inverted structure for reversing the direction and containing conductive fine particles is used, nucleation of domain-inversion is promoted and uniform nucleation is performed over a wide range. Accordingly, a uniform domain inversion structure (periodic domain inversion region) can be easily formed over a wide range.

次に、図1,図2を用いて、本発明の分極反転構造作製用の電極および分極反転構造の作製方法を説明する。   Next, with reference to FIG. 1 and FIG. 2, an electrode for producing a domain-inverted structure and a method for producing the domain-inverted structure of the present invention will be described.

図1は電極パターンを形成した誘電体基板の一例を示す図である。図1の例では、誘電体基板1にはMgOを5mol%ドープしたLiNbO(以下、MgO:LNと称す)が用いられている。また、この基板1の+Z面には櫛状の電極パターンを有する電極2が形成され、−Z面にはパターンの無い電極3が形成されている。そして、+Z面に形成された電極2には、導電性の微粒子5を混合して導電性を持たせた樹脂材料が用いられている。なお、図1の例では、導電性の微粒子5には球状のものが用いられている。 FIG. 1 is a diagram showing an example of a dielectric substrate on which an electrode pattern is formed. In the example of FIG. 1, LiNbO 3 doped with 5 mol% of MgO (hereinafter referred to as MgO: LN) is used for the dielectric substrate 1. In addition, an electrode 2 having a comb-like electrode pattern is formed on the + Z plane of the substrate 1, and an electrode 3 having no pattern is formed on the -Z plane. The electrode 2 formed on the + Z plane is made of a resin material that is made conductive by mixing conductive fine particles 5. In the example of FIG. 1, spherical particles are used as the conductive fine particles 5.

図2は、図1のMgO:LN基板1に電極2,3を介して電圧を加える様子を示す図である。また、図3(a)乃至(d)は、図1のMgO:LN基板1に電極2,3を介して電圧を加えたときの分極反転領域の変化を示す図である。図3(a)乃至(d)を参照すると、MgO:LN基板1と電極2との界面では、導電性微粒子5が接触している部分に電荷が集中する。そのため、導電性微粒子とMgO:LNの接触部分に分極反転の核6が生成されやすくなる。電極部分に発生した分極反転の核6は、電界の印加時間とともに図3(a),(b),(c),(d)の順に成長し、最終的に、図3(d)に示すように、電極2の電極パターンに沿った分極反転領域7が形成される。このような部分は+Z面側の電極2全体にわたって均一に存在しているので、核形成位置のムラが発生しにくい。したがって、電極2の形成された面全体に渡って均一な分極反転構造が形成できる。また、電界を印加する際、基板1の加熱や紫外線の照射を行えば、分極反転に必要な電界強度が低下するので、より厚い基板1に対して分極反転構造を形成できる。   FIG. 2 is a diagram illustrating a state in which a voltage is applied to the MgO: LN substrate 1 of FIG. FIGS. 3A to 3D are diagrams showing changes in the domain-inverted regions when a voltage is applied to the MgO: LN substrate 1 of FIG. 1 via the electrodes 2 and 3. Referring to FIGS. 3A to 3D, at the interface between the MgO: LN substrate 1 and the electrode 2, electric charges concentrate on the portion where the conductive fine particles 5 are in contact. For this reason, polarization-reversed nuclei 6 are easily generated at the contact portions between the conductive fine particles and MgO: LN. The polarization inversion nuclei 6 generated in the electrode portion grow in the order of FIGS. 3A, 3B, 3C, and 3D along with the application time of the electric field, and finally, as shown in FIG. Thus, the domain-inverted region 7 along the electrode pattern of the electrode 2 is formed. Since such a portion exists uniformly over the entire electrode 2 on the + Z plane side, unevenness of the nucleation position hardly occurs. Therefore, a uniform domain inversion structure can be formed over the entire surface on which the electrode 2 is formed. Further, when the electric field is applied, if the substrate 1 is heated or irradiated with ultraviolet rays, the electric field strength required for the polarization inversion is reduced, so that a polarization inversion structure can be formed on the thicker substrate 1.

図4,図5は、本発明の電極の作製方法(電極パターンの作製方法)の例を示す図である。   4 and 5 are diagrams showing an example of an electrode manufacturing method (electrode pattern manufacturing method) according to the present invention.

図4の方法では、まず、誘電体基板1上に絶縁体材料10で溝11を作製し(図4(a),(b))、導電性微粒子を含む材料12で溝11を埋め込んでいる(図4(c))。ここで、絶縁体材料10としては、フォトレジストを用いてもよいし、誘電体基板1の表面にSiO膜等を成膜しておいて、フォトリソグラフィーとエッチングで溝11を形成しても良い。フォトレジストを用いる場合は、導電性微粒子を含む材料の溶剤として、レジストが溶けないようなものを選択しておく必要がある。また、導電性微粒子の大きさは、溝11に対して十分小さいものを用いる必要があるが、近年では様々な金属でナノスケールの微粒子が製造されており、電極パターンのピッチが数μm程度と狭い場合でもそれらを利用して対応することが出来る。具体的に、波長変換用で検討されている分極反転周期は1.8μm(SHG、SFGで紫外光発生)〜40μm(OPOで赤外光発生)位の範囲であり、溝の周期は、その半分〜1/4程度であって、微粒子の大きさは溝の1/100程度であるのが良い。すなわち、導電性微粒子(例えば、銀の微粒子)の大きさとしては50nm〜200nm程度が良い。 In the method of FIG. 4, first, a groove 11 is formed on the dielectric substrate 1 with an insulating material 10 (FIGS. 4A and 4B), and the groove 11 is embedded with a material 12 containing conductive fine particles. (FIG. 4 (c)). Here, as the insulator material 10, a photoresist may be used, or an SiO 2 film or the like is formed on the surface of the dielectric substrate 1, and the groove 11 is formed by photolithography and etching. good. In the case of using a photoresist, it is necessary to select a solvent that does not dissolve the resist as a solvent for a material containing conductive fine particles. The size of the conductive fine particles needs to be sufficiently small with respect to the grooves 11, but in recent years, nanoscale fine particles are manufactured using various metals, and the pitch of the electrode pattern is about several μm. Even if it is narrow, they can be used. Specifically, the polarization inversion period studied for wavelength conversion ranges from 1.8 μm (UV light generation with SHG and SFG) to 40 μm (infrared light generation with OPO), and the groove period is The size of the fine particles is preferably about 1/100 of the groove. That is, the size of the conductive fine particles (for example, silver fine particles) is preferably about 50 nm to 200 nm.

また、図5の方法では、導電性の微粒子を直接感光性の樹脂に混合してフォトリソグラフィーによりパターニングを行っている(図5(a),(b),(c))。この方法は図4の方法に比べて簡便に電極パターンを作製できる。ただし、この場合は、フォトリソグラフィーを行った際に十分露光された光が透過できる程度に、混合する導電性微粒子の量を調整しておく必要がある。   In the method of FIG. 5, conductive fine particles are directly mixed with a photosensitive resin, and patterning is performed by photolithography (FIGS. 5A, 5B, and 5C). This method can produce an electrode pattern more easily than the method of FIG. However, in this case, it is necessary to adjust the amount of conductive fine particles to be mixed to such an extent that light that is sufficiently exposed when photolithography is performed can be transmitted.

上述の例では、導電性微粒子に球状のものを用いているが、導電性微粒子としては、球状のものに限らず、任意の形状のものを用いることができる。例えば、導電性微粒子を針状のものにすることもできる。図6には、針状の導電性微粒子5を混合した材料で形成された電極2が示されている。針状の導電性微粒子としては、カーボンナノチューブ等が利用できる。針状の導電性微粒子を用いる場合は、球状の導電性微粒子を使う場合に比べて少ない混合量でも電極に導電性を持たせることができるので、核形成の密度を必要に応じて低下させたい場合や、図5のように光の透過率を高めたい場合に有利である。   In the above-described example, spherical particles are used as the conductive fine particles, but the conductive fine particles are not limited to spherical particles, and those having an arbitrary shape can be used. For example, the conductive fine particles can be needle-shaped. FIG. 6 shows an electrode 2 formed of a material in which acicular conductive fine particles 5 are mixed. Carbon nanotubes can be used as the needle-like conductive fine particles. When using needle-shaped conductive fine particles, the electrode can be made conductive even with a smaller mixing amount than when using spherical conductive fine particles, so the density of nucleation should be reduced as necessary. This is advantageous in cases where it is desired to increase the light transmittance as shown in FIG.

本発明は、可視光レーザー光源,フォトプリンタ,ディスプレイ,テラヘルツレーザー光源などにおいて、分極反転構造をもつ素子に利用可能である。
The present invention can be used for an element having a polarization inversion structure in a visible light laser light source, a photo printer, a display, a terahertz laser light source, and the like.

電極パターンを形成した誘電体基板の一例を示す図である。It is a figure which shows an example of the dielectric substrate in which the electrode pattern was formed. 図1のMgO:LN基板に電極を介して電圧を加える様子を示す図である。It is a figure which shows a mode that a voltage is applied via an electrode to the MgO: LN board | substrate of FIG. 図1のMgO:LN基板に電極を介して電圧を加えたときの分極反転領域の変化を示す図である。It is a figure which shows the change of a polarization inversion area | region when a voltage is applied to the MgO: LN board | substrate of FIG. 1 via an electrode. 本発明の電極の作製方法(電極パターンの作製方法)の例を示す図である。It is a figure which shows the example of the manufacturing method (electrode pattern manufacturing method) of the electrode of this invention. 本発明の電極の作製方法(電極パターンの作製方法)の例を示す図である。It is a figure which shows the example of the manufacturing method (electrode pattern manufacturing method) of the electrode of this invention. 針状の導電性微粒子を混合した材料で形成された電極を示す図である。It is a figure which shows the electrode formed with the material which mixed the acicular electroconductive fine particles.

符号の説明Explanation of symbols

1 誘電体基板
2,3 電極
5 導電性微粒子
10 絶縁体材料
11 溝
12 導電性微粒子を含む材料
DESCRIPTION OF SYMBOLS 1 Dielectric substrate 2, 3 Electrode 5 Conductive fine particle 10 Insulator material 11 Groove 12 Material containing conductive fine particle

Claims (9)

非線形光学効果を持つ誘電体基板に対し、対向する2つの面にそれぞれ配置される電極であって、対向する2つの面にそれぞれ配置される各電極のうちの少なくとも一方の電極は、誘電体基板に電場を加えることで分極方向を反転させる分極反転構造を作製するための所定の電極パターンを有し、導電性の微粒子を含む材料が用いられることを特徴とする分極反転構造作製用の電極。 An electrode disposed on two opposing surfaces with respect to a dielectric substrate having a nonlinear optical effect, and at least one of the electrodes respectively disposed on the two opposing surfaces is a dielectric substrate An electrode for producing a domain-inverted structure having a predetermined electrode pattern for producing a domain-inverted structure in which the polarization direction is inverted by applying an electric field to the electrode, and comprising conductive fine particles. 請求項1記載の電極において、前記導電性の微粒子は、大きさが50nm〜200nmの範囲であることを特徴とする分極反転構造作製用の電極。 2. The electrode for producing a domain-inverted structure according to claim 1, wherein the conductive fine particles have a size in a range of 50 nm to 200 nm. 請求項1または請求項2に記載の分極反転構造作製用の電極において、前記導電性の微粒子は針状の構造を有していることを特徴とする分極反転構造作製用の電極。 3. The electrode for producing a domain-inverted structure according to claim 1 or 2, wherein the conductive fine particles have a needle-like structure. 非線形光学効果を持つ誘電体基板に分極反転構造を作製するための所定の電極パターンを有する電極の作製方法であって、前記誘電体基板の表面に絶縁体材料で溝を作製し、該溝を導電性の微粒子を含む材料で埋め込んで、前記電極パターンを形成することを特徴とする電極の作製方法。 A method for producing an electrode having a predetermined electrode pattern for producing a domain-inverted structure on a dielectric substrate having a nonlinear optical effect, wherein a groove is made of an insulating material on the surface of the dielectric substrate. A method for manufacturing an electrode, wherein the electrode pattern is formed by embedding with a material containing conductive fine particles. 非線形光学効果を持つ誘電体基板に分極反転構造を作製するための所定の電極パターンを有する電極の作製方法であって、導電性の微粒子を含む感光性の樹脂を誘電体基板上に成膜し、導電性の微粒子を含む感光性の樹脂をフォトリソグラフィーにより加工して電極パターンを形成することを特徴とする電極の作製方法。 A method for producing an electrode having a predetermined electrode pattern for producing a domain-inverted structure on a dielectric substrate having a nonlinear optical effect, wherein a photosensitive resin containing conductive fine particles is formed on the dielectric substrate. A method for producing an electrode, wherein a photosensitive resin containing conductive fine particles is processed by photolithography to form an electrode pattern. 請求項1乃至請求項3のいずれかに記載の分極反転構造作製用の電極を用いて、非線形光学効果を持つ誘電体基板に分極反転構造を作製することを特徴とする分極反転構造の作製装置。 A device for producing a domain-inverted structure, wherein the domain-inverted structure is produced on a dielectric substrate having a nonlinear optical effect, using the electrode for producing a domain-inverted structure according to any one of claims 1 to 3. . 請求項6記載の分極反転構造の作製装置において、前記誘電体基板に電場を印加中に前記誘電体基板を加熱する加熱手段をさらに有していることを特徴とする分極反転構造の作製装置。 7. The apparatus for producing a domain-inverted structure according to claim 6, further comprising heating means for heating the dielectric substrate while an electric field is applied to the dielectric substrate. 請求項6記載の分極反転構造の作製装置において、前記誘電体基板に電場を印加中に前記誘電体基板に紫外線を照射する紫外線照射手段をさらに有していることを特徴とする分極反転構造の作製装置。 7. The apparatus for producing a domain-inverted structure according to claim 6, further comprising ultraviolet irradiation means for irradiating the dielectric substrate with ultraviolet rays while applying an electric field to the dielectric substrate. Production device. 請求項1乃至請求項3のいずれかに記載の分極反転構造作製用の電極を用いて、非線形光学効果を持つ誘電体基板に分極反転構造を作製することを特徴とする分極反転構造の作製方法。 A method for producing a domain-inverted structure, comprising: producing a domain-inverted structure on a dielectric substrate having a nonlinear optical effect using the electrode for domain-inverted structure production according to any one of claims 1 to 3. .
JP2006343730A 2006-12-21 2006-12-21 Electrode for producing domain-inverted structure, method for producing electrode, apparatus for producing domain-inverted structure, and method for producing domain-inverted structure Pending JP2008158017A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009153978A1 (en) 2008-06-17 2009-12-23 パナソニック株式会社 Radio transmission device and radio transmission method
US8120842B2 (en) 2007-03-26 2012-02-21 Ricoh Company, Ltd. Wavelength conversion device, laser apparatus, image forming apparatus, and display apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8120842B2 (en) 2007-03-26 2012-02-21 Ricoh Company, Ltd. Wavelength conversion device, laser apparatus, image forming apparatus, and display apparatus
WO2009153978A1 (en) 2008-06-17 2009-12-23 パナソニック株式会社 Radio transmission device and radio transmission method

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