[go: up one dir, main page]

JP2008153464A - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
JP2008153464A
JP2008153464A JP2006340349A JP2006340349A JP2008153464A JP 2008153464 A JP2008153464 A JP 2008153464A JP 2006340349 A JP2006340349 A JP 2006340349A JP 2006340349 A JP2006340349 A JP 2006340349A JP 2008153464 A JP2008153464 A JP 2008153464A
Authority
JP
Japan
Prior art keywords
mounting hole
support electrode
inclined surface
fixing member
radiator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006340349A
Other languages
Japanese (ja)
Inventor
Yusuke Nakai
勇介 中井
Yoshiya Ogi
嘉哉 扇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP2006340349A priority Critical patent/JP2008153464A/en
Publication of JP2008153464A publication Critical patent/JP2008153464A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H10W72/00

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

【課題】半導体素子に機械的応力を殆ど発生させずに支持電極を放熱体の装着孔に嵌合させ、且つ放熱体の装着孔が膨張しても支持電極を装着孔内に確実に保持する。
【解決手段】本発明による半導体装置(10)では、固定部材(31)により底壁(11)のフランジ(11d)を装着孔(22)の内側傾斜面(22b)に対して押圧して放熱体(21)の装着孔(22)内に支持電極(1)を固定するので、固定部材(31)により径方向内側に作用する押圧力は、殆ど支持電極(1)の底壁(11)には加わらない。このため、半導体装置(10)を放熱体(21)の装着孔(22)に嵌合したときに、半導体素子(2)に機械的応力が殆ど発生しない。また、固定部材(31)によりフランジ(11d)を装着孔(22)の内側傾斜面(22b)に押圧するので、加熱により装着孔(22)が膨張しても、支持電極(1)を装着孔(22)内に確実に保持することができる。
【選択図】図1
A support electrode is fitted into a mounting hole of a heat radiating member without generating mechanical stress in a semiconductor element, and the support electrode is securely held in the mounting hole even when the mounting hole of the heat radiating member expands. .
In a semiconductor device (10) according to the present invention, heat is released by pressing a flange (11d) of a bottom wall (11) against an inner inclined surface (22b) of a mounting hole (22) by a fixing member (31). Since the support electrode (1) is fixed in the mounting hole (22) of the body (21), the pressing force acting radially inward by the fixing member (31) is almost the bottom wall (11) of the support electrode (1). Does not participate. For this reason, when the semiconductor device (10) is fitted into the mounting hole (22) of the radiator (21), mechanical stress is hardly generated in the semiconductor element (2). Also, since the flange (11d) is pressed against the inner inclined surface (22b) of the mounting hole (22) by the fixing member (31), the support electrode (1) is mounted even if the mounting hole (22) expands due to heating. It can be securely held in the hole (22).
[Selection] Figure 1

Description

本発明は、放熱体への取付時に半導体素子に機械的応力を殆ど発生させずに支持電極を放熱体の装着孔に嵌合することができる半導体装置に関する。   The present invention relates to a semiconductor device in which a support electrode can be fitted into a mounting hole of a radiator without generating mechanical stress in a semiconductor element when attached to the radiator.

半導体素子を固着した支持電極を放熱体の装着孔に圧入する圧入型ダイオード装置は、公知である。例えば、下記の特許文献1に開示される圧入型ダイオード装置は、図8に示すように、底壁(11)及び底壁(11)の外周部に形成された筒状の側壁(12)により皿状の凹部(14)を形成する支持電極(1)と、支持電極(1)の凹部(14)内に配置された半導体チップ(半導体素子)(2)と、半導体チップ(2)の一方の電極面(2c)に固着されたリード電極(3)と、凹部(14)内に充填されて半導体チップ(2)及びリード電極(3)の一部を被覆する樹脂被覆体(4)とを備える。リード電極(3)は、半導体チップ(2)の一方の電極面(2c)に半田等のろう材(6)により固着されたヘッダ(13)と、ヘッダ(13)から上方に延伸する軸部(17)とを有する。図8に示すダイオード装置(30)では、支持電極(1)の凹部(14)を形成する内部底面(14b)に底壁(11)と一体に且つ内部底面(14b)から突出して形成された支持部(7)を有する。半導体チップ(2)の他方の電極面(2b)は、支持部(7)にろう材(6)により固着され、半導体チップ(2)と支持電極(1)とを電気的に接続する。   A press-fit diode device that press-fits a support electrode to which a semiconductor element is fixed into a mounting hole of a radiator is known. For example, a press-fit diode device disclosed in Patent Document 1 below includes a bottom wall (11) and a cylindrical side wall (12) formed on the outer periphery of the bottom wall (11) as shown in FIG. One of the support electrode (1) forming the dish-shaped recess (14), the semiconductor chip (semiconductor element) (2) disposed in the recess (14) of the support electrode (1), and one of the semiconductor chips (2) A lead electrode (3) fixed to the electrode surface (2c), and a resin cover (4) filled in the recess (14) and covering a part of the semiconductor chip (2) and the lead electrode (3); Is provided. The lead electrode (3) includes a header (13) fixed to one electrode surface (2c) of the semiconductor chip (2) by a brazing material (6) such as solder, and a shaft portion extending upward from the header (13). (17) In the diode device (30) shown in FIG. 8, the inner bottom surface (14b) forming the recess (14) of the support electrode (1) is formed integrally with the bottom wall (11) and protruding from the inner bottom surface (14b). It has a support part (7). The other electrode surface (2b) of the semiconductor chip (2) is fixed to the support portion (7) with a brazing material (6), and electrically connects the semiconductor chip (2) and the support electrode (1).

支持電極(1)は、銅等の放熱性の高い金属により形成され、半導体チップ(2)に電流が流れて発生する熱は、支持電極(1)を通じて外部に放出される。即ち、支持電極(1)は、半導体チップ(2)に対する電極として作用すると共に、放熱板としても作用する。例えば、大きな逆方向サージ電圧が半導体チップ(2)に印加されるとき、支持電極(1)が十分な熱容量を備えないと、支持電極(1)を通じて十分な量の熱が排出されずに半導体チップ(2)が加熱され、半導体チップ(2)の電気的特性が劣化するおそれがある。   The support electrode (1) is formed of a metal with high heat dissipation such as copper, and heat generated by current flowing through the semiconductor chip (2) is released to the outside through the support electrode (1). That is, the support electrode (1) acts as an electrode for the semiconductor chip (2) and also acts as a heat sink. For example, when a large reverse surge voltage is applied to the semiconductor chip (2), if the support electrode (1) does not have a sufficient heat capacity, a sufficient amount of heat is not discharged through the support electrode (1). The chip (2) is heated, and the electrical characteristics of the semiconductor chip (2) may be deteriorated.

図6に示すダイオード装置(30)は、例えば自動車用交流発電機(オルタネータ)の出力整流ダイオードに適用される。図9に示すように、交流発電機の放熱体(21)に側壁(12)の外径より小さい内径で形成された装着孔(22)内に向かって、押圧治具(20)によりダイオード装置(30)の支持電極(1)の底面(1c)を押圧することにより、支持電極(1)を装着孔(22)内に圧入して、ダイオード装置(30)が放熱体(21)の装着孔(22)内に保持される。   The diode device (30) shown in FIG. 6 is applied to an output rectifier diode of an automotive alternator (alternator), for example. As shown in FIG. 9, a diode device is provided by a pressing jig (20) toward a mounting hole (22) formed in the radiator (21) of the AC generator with an inner diameter smaller than the outer diameter of the side wall (12). By pressing the bottom surface (1c) of the support electrode (1) of (30), the support electrode (1) is press-fitted into the mounting hole (22), and the diode device (30) is mounted on the radiator (21). Retained in the hole (22).

特開2002−261210公報JP 2002-261210 A

しかしながら、上記の特許文献1のダイオード装置では、放熱体(21)の装着孔(22)内に支持電極(1)を強制的に圧入するとき、装着孔(22)を形成する内壁により支持電極(1)の外周面(1a)が径方向内側に押圧されて、側壁(12)から底壁(11)の中心部に圧縮力(P)或いは曲げ応力が伝達されるため、半導体チップ(2)に機械的な応力が発生して半導体チップ(2)が破損し、電気的特性が劣化することがあった。   However, in the diode device of Patent Document 1 described above, when the support electrode (1) is forcibly press-fitted into the mounting hole (22) of the radiator (21), the support electrode is formed by the inner wall that forms the mounting hole (22). Since the outer peripheral surface (1a) of (1) is pressed radially inward and compressive force (P) or bending stress is transmitted from the side wall (12) to the center of the bottom wall (11), the semiconductor chip (2 ) May cause mechanical stress to break the semiconductor chip (2), which may deteriorate the electrical characteristics.

そこで、本発明は、半導体素子に機械的応力を殆ど発生させずに支持電極を放熱体の装着孔に嵌合できる半導体装置を提供することを目的とする。   Accordingly, an object of the present invention is to provide a semiconductor device in which a support electrode can be fitted into a mounting hole of a heat radiating body without generating mechanical stress in the semiconductor element.

本発明の半導体装置(10)は、底壁(11)及び底壁(11)の外周部に形成された筒状の側壁(12)により皿状の凹部(14)を形成する支持電極(1)と、凹部(14)内の底壁(11)上に配置された半導体素子(2)と、半導体素子(2)に固着されたリード電極(3)と、凹部(14)内に充填されて半導体素子(2)及びリード電極(3)の一部を被覆する樹脂被覆体(4)とを備える。この半導体装置(10)では、支持電極(1)の底壁(11)は底壁(11)の底面(11a)に向かって先細の円錐状に形成された外側傾斜面(11c)を備え、外側傾斜面(11c)は側壁(12)との接続部において側壁(12)から径方向外側に突出して底壁(11)の最大直径を有するフランジ(11d)を形成し、金属製の放熱体(21)に形成された装着孔(22)内に支持電極(1)を嵌合するとき、外側傾斜面(11c)は放熱体(21)の装着孔(22)を形成する内側傾斜面(22b)に当接し、装着孔(22)の内側傾斜面(22b)の上方に形成された大径部(22a)の内壁(22d)と側壁(12)との間に固着する環状の固定部材(31)により、底壁(11)のフランジ(11d)を装着孔(22)の内側傾斜面(22b)に対して押圧する。   The semiconductor device (10) of the present invention includes a support electrode (1) that forms a dish-shaped recess (14) by a bottom wall (11) and a cylindrical side wall (12) formed on the outer periphery of the bottom wall (11). ), The semiconductor element (2) disposed on the bottom wall (11) in the recess (14), the lead electrode (3) fixed to the semiconductor element (2), and the recess (14) filled. And a resin coating (4) that covers a part of the semiconductor element (2) and the lead electrode (3). In this semiconductor device (10), the bottom wall (11) of the support electrode (1) includes an outer inclined surface (11c) formed in a tapered cone shape toward the bottom surface (11a) of the bottom wall (11), The outer inclined surface (11c) protrudes radially outward from the side wall (12) at the connection portion with the side wall (12) to form a flange (11d) having the maximum diameter of the bottom wall (11), and is a metal radiator. When the support electrode (1) is fitted into the mounting hole (22) formed in (21), the outer inclined surface (11c) is an inner inclined surface that forms the mounting hole (22) of the radiator (21) ( 22b), and is fixed between the inner wall (22d) and the side wall (12) of the large diameter portion (22a) formed above the inner inclined surface (22b) of the mounting hole (22). By (31), the flange (11d) of the bottom wall (11) is pressed against the inner inclined surface (22b) of the mounting hole (22).

固定部材(31)により底壁(11)のフランジ(11d)を装着孔(22)の内側傾斜面(22b)に対して押圧して放熱体(21)の装着孔(22)内に支持電極(1)を固定するので、固定部材(31)により径方向内側に作用する押圧力は、殆ど支持電極(1)の底壁(11)には加わらない。このため、半導体装置(10)を放熱体(21)の装着孔(22)に嵌合したときに、半導体素子(2)に機械的応力が殆ど発生しない。また、固定部材(31)により支持電極(1)のフランジ(11d)を放熱体(21)の装着孔(22)の内側傾斜面(22b)に押圧するので、支持電極(1)を放熱体(21)の装着孔(22)内に圧入して、摩擦を利用して支持電極を装着孔内に固定する従来の構造と比較して、支持電極(1)を装着孔(22)内に確実に保持することができる。   The supporting member is inserted into the mounting hole (22) of the radiator (21) by pressing the flange (11d) of the bottom wall (11) against the inner inclined surface (22b) of the mounting hole (22) by the fixing member (31). Since (1) is fixed, almost no pressing force acting radially inward by the fixing member (31) is applied to the bottom wall (11) of the support electrode (1). For this reason, when the semiconductor device (10) is fitted into the mounting hole (22) of the radiator (21), mechanical stress is hardly generated in the semiconductor element (2). Further, since the fixing member (31) presses the flange (11d) of the support electrode (1) against the inner inclined surface (22b) of the mounting hole (22) of the radiator (21), the support electrode (1) is Compared with the conventional structure in which the support electrode is pressed into the mounting hole (22) of (21) and the support electrode is fixed in the mounting hole using friction, the support electrode (1) is inserted into the mounting hole (22). It can be held securely.

本発明では、放熱体への取付時に半導体素子に機械的応力を殆ど発生させずに支持電極を放熱体の装着孔に嵌合できるので、半導体素子の電気的特性が劣化しない信頼性の高い半導体装置を提供することが可能となる。   In the present invention, since the support electrode can be fitted into the mounting hole of the heat sink without generating mechanical stress in the semiconductor element at the time of mounting to the heat sink, a highly reliable semiconductor that does not deteriorate the electrical characteristics of the semiconductor element. An apparatus can be provided.

以下、自動車用交流発電機の出力整流ダイオードに適用した本発明による半導体装置の実施の形態を図1〜図7について説明する。但し、図1〜図7では、図8及び図9に示す箇所と実質的に同一の部分には同一の符号を付し、その説明を省略する。   1 to 7 show an embodiment of a semiconductor device according to the present invention applied to an output rectifier diode of an automotive alternator. However, in FIGS. 1-7, the part substantially the same as the location shown in FIG.8 and FIG.9 is attached | subjected the same code | symbol, and the description is abbreviate | omitted.

図1に示すように、本実施の形態のダイオード装置(10)は、底壁(11)及び底壁(11)の外周部から上方に突出して形成された筒状の側壁(12)により皿状の凹部(14)を形成する支持電極(1)と、凹部(14)内の底壁(11)上に形成された支持部(7)に半田等のろう材(6)により固着された半導体チップ(2)と、半導体チップ(2)の上面にろう材(6)により固着されたヘッダ(13)及び軸部(17)を有するリード電極(3)と、凹部(14)内に充填されて半導体チップ(2)とリード電極(3)のヘッダ(13)及び軸部(17)の一部を被覆する樹脂被覆体(4)とを備える。支持電極(1)は、例えば熱伝導率及び導電率の高い材料(例えば、銅又は銅合金)から構成され、周知のプレス加工等により皿状に形成される。支持電極(1)の底壁(11)は、上面(11b)から底面(11a)に向かって先細の円錐状に形成された外側傾斜面(11c)を備える。外側傾斜面(11c)は、側壁(12)との接続部において側壁(12)から径方向外側に突出して底壁(11)の最大直径を有するフランジ(11d)を形成する。即ち、平面的に見て、外側傾斜面(11c)は側壁(12)よりも外側まで延伸し、側壁(12)の外周にはフランジ(11d)が環状に形成される。側壁(12)は、半導体チップ(2)の上面より高く形成される。半導体チップ(2)は、例えば、シリコン等の半導体結晶を円板状又は薄板状に形成して成り、周知のPN接合ダイオードを構成する。リード電極(3)は、例えば、銅又は銅合金により形成され、ヘッダ(13)は、円柱状、円盤状又は円錐状に形成され、ヘッダ(13)の略中央部から棒状の軸部(17)が上方に延伸して形成される。熱伝導率の高い金属から構成される支持電極(1)及びリード電極(3)は、半導体チップ(2)で発生する熱を吸収してダイオード装置(10)の外部に放出する。樹脂被覆体(4)は、例えば、エポキシ樹脂又はシリコーン樹脂等の耐熱性の高い樹脂により形成される。その他の構成は、図8に示す従来のダイオード装置(30)と略同様である。   As shown in FIG. 1, the diode device (10) of the present embodiment includes a bottom wall (11) and a cylindrical side wall (12) formed so as to protrude upward from the outer peripheral portion of the bottom wall (11). Fixed to the support electrode (1) forming the concave recess (14) and the support portion (7) formed on the bottom wall (11) in the recess (14) by the brazing material (6) such as solder. The semiconductor chip (2), the lead electrode (3) having the header (13) and the shaft portion (17) fixed to the upper surface of the semiconductor chip (2) by the brazing material (6), and the recess (14) are filled. The semiconductor chip (2) and the resin coating (4) covering the header (13) of the lead electrode (3) and a part of the shaft portion (17) are provided. The support electrode (1) is made of, for example, a material having high thermal conductivity and high conductivity (for example, copper or copper alloy), and is formed in a dish shape by a known press working or the like. The bottom wall (11) of the support electrode (1) includes an outer inclined surface (11c) formed in a tapered cone shape from the upper surface (11b) toward the bottom surface (11a). The outer inclined surface (11c) protrudes radially outward from the side wall (12) at the connection portion with the side wall (12) to form a flange (11d) having the maximum diameter of the bottom wall (11). That is, as viewed in a plan view, the outer inclined surface (11c) extends outward from the side wall (12), and a flange (11d) is formed in an annular shape on the outer periphery of the side wall (12). The side wall (12) is formed higher than the upper surface of the semiconductor chip (2). The semiconductor chip (2) is formed, for example, by forming a semiconductor crystal such as silicon in a disc shape or a thin plate shape, and constitutes a known PN junction diode. The lead electrode (3) is formed of, for example, copper or a copper alloy, and the header (13) is formed in a columnar shape, a disc shape, or a conical shape, and a rod-shaped shaft portion (17 ) Is formed by extending upward. The support electrode (1) and the lead electrode (3) made of a metal having high thermal conductivity absorb heat generated in the semiconductor chip (2) and release it to the outside of the diode device (10). The resin coating (4) is formed of a resin having high heat resistance such as an epoxy resin or a silicone resin. Other configurations are substantially the same as those of the conventional diode device (30) shown in FIG.

上記の構成のダイオード装置(10)をアルミニウム又はアルミニウム合金等から成る自動車用交流発電機の放熱体(21)に形成された装着孔(22)内に固定する際に、支持電極(1)が放熱体(21)の装着孔(22)内に嵌合するとき、支持電極(1)の外側傾斜面(11c)は放熱体(21)の装着孔(22)を形成する円錐状の内側傾斜面(22b)に当接する。本実施の形態では、支持電極(1)の底面(11a)は放熱体(21)の底面(21a)から突出するが、支持電極(1)の底面(11a)と放熱体(21a)の底面(21a)とを面一にしても良く、支持電極(1)の底面(11a)を放熱体(21a)の底面(21a)よりも窪ませても良い。次に、図2及び図3に示すように、放熱体(21)の装着孔(22)の内側傾斜面(22b)の上方に段部(22c)を介して形成された円筒状の大径部(22a)の内壁(22d)と側壁(12)との間に、大径部(22a)の内径よりも大きい外径を有する円環状の固定部材(31)をプレス機等で圧入することにより固着する。これにより、支持電極(1)の底壁(11)のフランジ(11d)が放熱体(21)の装着孔(22)の内側傾斜面(22b)に対して押圧され、ダイオード装置(10)の支持電極(1)が放熱体(21)の装着孔(22)内に固定されると共に、支持電極(1)と放熱体(21)とが接触して良好な熱伝導性が得られる。固定部材(31)は、放熱体(21)と同種の金属又は支持電極(1)よりも弾性係数の低い、即ち軟質の金属から成る板材等を例えば周知のプレス加工で所定寸法の円環状に打ち抜く等することにより形成される。固定部材(31)を金属で形成することにより、半導体チップ(2)で発生した熱を固定部材(31)を介して放熱できる。また、固定部材(31)の嵌め込みによって支持電極(1)を放熱体(21)に固定するので、半導体チップ(2)に機械的応力を殆ど発生させずにダイオード装置(10)を放熱体(21)の装着孔(22)に嵌合させることが可能となる。   When the diode device (10) having the above configuration is fixed in the mounting hole (22) formed in the radiator (21) of the automotive alternator made of aluminum or aluminum alloy, the support electrode (1) When fitted into the mounting hole (22) of the radiator (21), the outer inclined surface (11c) of the support electrode (1) is a conical inner slope that forms the mounting hole (22) of the radiator (21). It contacts the surface (22b). In the present embodiment, the bottom surface (11a) of the support electrode (1) protrudes from the bottom surface (21a) of the radiator (21), but the bottom surface (11a) of the support electrode (1) and the bottom surface of the radiator (21a) (21a) may be flush with each other, and the bottom surface (11a) of the support electrode (1) may be recessed from the bottom surface (21a) of the radiator (21a). Next, as shown in FIGS. 2 and 3, a cylindrical large diameter formed above the inner inclined surface (22b) of the mounting hole (22) of the radiator (21) via a step portion (22c). An annular fixing member (31) having an outer diameter larger than the inner diameter of the large diameter portion (22a) is press-fitted between the inner wall (22d) and the side wall (12) of the portion (22a) with a press machine or the like. It adheres by. Thereby, the flange (11d) of the bottom wall (11) of the support electrode (1) is pressed against the inner inclined surface (22b) of the mounting hole (22) of the radiator (21), and the diode device (10) The support electrode (1) is fixed in the mounting hole (22) of the heat radiating body (21), and the support electrode (1) and the heat radiating body (21) are brought into contact with each other to obtain good thermal conductivity. The fixing member (31) is made of a metal having the same elastic modulus as that of the radiator (21) or a plate material made of a soft metal having a lower elastic modulus than that of the support electrode (1). It is formed by punching or the like. By forming the fixing member (31) from metal, heat generated in the semiconductor chip (2) can be radiated through the fixing member (31). Further, since the support electrode (1) is fixed to the heat radiating body (21) by fitting the fixing member (31), the diode device (10) can be connected to the heat radiating body (2) without generating mechanical stress on the semiconductor chip (2). 21) can be fitted into the mounting hole (22).

本実施の形態のダイオード装置(10)では、円環状の固定部材(31)により、支持電極(1)の底壁(11)のフランジ(11d)を放熱体(21)の装着孔(22)の内側傾斜面(22b)に対して押圧して装着孔(22)内に支持電極(1)を固定するので、固定部材(31)により径方向内側に作用する押圧力は、底壁(11)には加わらない。即ち、放熱体(21)によって支持電極(1)が径方向内側に押圧されることがない。このため、ダイオード装置(10)を放熱体(21)の装着孔(22)に嵌合したときに、半導体チップ(2)に機械的応力が殆ど発生しない。放熱体(21)の装着孔(22)に形成された大径部(22a)と支持電極(1)の側壁(12)との間に固定部材(31)を固着する際に、固定部材(31)から作用する押圧力が側壁(12)を通じて半導体チップ(2)に加わり難くするためには、側壁(12)を径方向内側にある程度弾性変形する厚さに形成することが望ましい。また、固定部材(31)により支持電極(1)のフランジ(11d)を放熱体(21)の装着孔(22)の内側傾斜面(22b)に押圧するので、支持電極(1)を放熱体(21)の装着孔(22)内に圧入する際に生ずる摩擦を利用して支持電極(1)を装着孔(22)内に固定する図8に示す従来のダイオード装置(30)と比較して、ダイオード装置(10)の動作中に発生する熱等により放熱体(21)の装着孔(22)が膨張して拡径した場合でも、支持電極(1)が装着孔(22)内に確実に保持され、ダイオード装置(10)が放熱体(21)から脱落することを防止することができる。更に、固定部材(31)を放熱体(21)と同種の金属材料で形成した場合は、前記の作用効果を良好に発揮することができる。   In the diode device (10) of the present embodiment, the flange (11d) of the bottom wall (11) of the support electrode (1) is attached to the mounting hole (22) of the radiator (21) by the annular fixing member (31). Since the supporting electrode (1) is fixed to the mounting hole (22) by pressing against the inner inclined surface (22b), the pressing force acting radially inward by the fixing member (31) is reduced to the bottom wall (11 ) Does not participate. That is, the support electrode (1) is not pressed radially inward by the heat radiating body (21). For this reason, when the diode device (10) is fitted into the mounting hole (22) of the radiator (21), mechanical stress is hardly generated in the semiconductor chip (2). When fixing the fixing member (31) between the large diameter portion (22a) formed in the mounting hole (22) of the radiator (21) and the side wall (12) of the support electrode (1), the fixing member ( In order to make it difficult for the pressing force applied from 31) to be applied to the semiconductor chip (2) through the side wall (12), it is desirable to form the side wall (12) to a thickness that elastically deforms to some extent radially inward. Further, since the fixing member (31) presses the flange (11d) of the support electrode (1) against the inner inclined surface (22b) of the mounting hole (22) of the radiator (21), the support electrode (1) is Compared with the conventional diode device (30) shown in FIG. 8 in which the support electrode (1) is fixed in the mounting hole (22) using the friction generated when it is press-fitted into the mounting hole (22) of (21). Even if the mounting hole (22) of the radiator (21) expands and expands due to heat generated during the operation of the diode device (10), the support electrode (1) remains in the mounting hole (22). The diode device (10) can be securely held and can be prevented from falling off the radiator (21). Furthermore, when the fixing member (31) is formed of the same kind of metal material as that of the heat radiating body (21), the above-described effects can be satisfactorily exhibited.

本発明の実施態様は前記の実施の形態に限定されず、種々の変更が可能である。例えば、上記の実施の形態では、放熱体(21)と同種の金属又は支持電極(1)よりも弾性係数の低い、即ち軟質の金属で円環状の固定部材(31)を形成したが、半導体チップ(2)の発熱量が小さいか又は支持電極(1)の熱容量が十分に大きい場合は、図4に示すように、装着孔(22)の大径部(22a)の内壁(22d)と側壁(12)との間に所定寸法の円環状に形成された樹脂製の固定部材(41)を圧入して固着してもよい。樹脂製の固定部材(41)を圧入する代わりに、放熱体(21)の装着孔(22)の大径部(22a)の内壁(22d)と側壁(12)との間に流動状態の樹脂を流し込んで硬化させることにより、樹脂製の固定部材(41)を形成してもよい。また、上記の実施の形態では、環状の固定部材(31)の内壁が支持電極(1)の側壁(12)に接触するが、図5に示すように、固定部材(31)の内壁と支持電極(1)の側壁(12)とが接触しなくてもよい。この場合は、放熱体(21)の大径部(22a)の内径よりも大きい外径を有すると共に、支持電極(1)の側壁(12)の外径よりも大きい内径を有する環状の固定部材(31)を使用する。放熱体(21)の大径部(22a)の内壁(22d)内に前記の固定部材(31)を圧入して固着する際に、固定部材(31)により支持電極(1)の底壁(11)のフランジ(11d)が放熱体(21)の装着孔(22)の内側傾斜面(22b)に対して押圧されるだけで、側壁(12)を通じて径方向内側に作用する押圧力が支持電極(1)に加わることを完全に防止できる。また、図6に示すように、放熱体(21)の装着孔(22)の大径部(22a)の内壁(22d)に形成された雌ねじ(22e)と固定部材(51)の外周面に形成された雄ねじ(51a)とを螺合させてねじ込むことにより、装着孔(22)の大径部(22a)の内壁(22d)と側壁(12)との間に固定部材(51)を固定してもよい。また、固定部材(31)の外周面に周知のローレット加工を施して、放熱体(21)の装着孔(22)の大径部(22a)の内壁(22d)と固定部材(31)の外周面とを更に密着させてもよい。また、固定部材(31)の圧入時に支持電極(1)の外側傾斜面(11c)と放熱体(21)の装着孔(22)の内側傾斜面(22b)との間に生ずる隙間を半田等のろう材で埋めてもよい。この場合は、支持電極(1)と放熱体(21)との熱伝導性及び電気的接続が安定して得られる利点がある。更に、図7に示すように、平板状の支持電極(1)上に半導体チップ(2)を固着した構造を有するダイオード装置(40)にも本発明を適用することが可能である。なお、図示の半導体チップ(2)、リード電極(3)及び樹脂被覆体(4)の形状及び構造は、本発明を限定するものではない。   Embodiments of the present invention are not limited to the above-described embodiments, and various modifications can be made. For example, in the above-described embodiment, the annular fixing member (31) is formed of the same kind of metal as the heat dissipating body (21) or the elastic coefficient lower than that of the support electrode (1), that is, a soft metal. When the heat generation amount of the tip (2) is small or the heat capacity of the support electrode (1) is sufficiently large, as shown in FIG. 4, the inner wall (22d) of the large diameter portion (22a) of the mounting hole (22) A resin-made fixing member (41) formed in an annular shape with a predetermined dimension may be press-fitted between the side wall (12) and fixed. Instead of press-fitting the resin fixing member (41), the resin in a fluid state between the inner wall (22d) and the side wall (12) of the large-diameter portion (22a) of the mounting hole (22) of the radiator (21) The resin fixing member (41) may be formed by pouring and curing. In the above embodiment, the inner wall of the annular fixing member (31) is in contact with the side wall (12) of the support electrode (1). However, as shown in FIG. The side wall (12) of the electrode (1) may not be in contact. In this case, an annular fixing member having an outer diameter larger than the inner diameter of the large-diameter portion (22a) of the radiator (21) and an inner diameter larger than the outer diameter of the side wall (12) of the support electrode (1). Use (31). When the fixing member (31) is press-fitted and fixed into the inner wall (22d) of the large-diameter portion (22a) of the radiator (21), the bottom wall of the support electrode (1) is fixed by the fixing member (31). 11) The flange (11d) is only pressed against the inner inclined surface (22b) of the mounting hole (22) of the radiator (21), and the pressing force acting radially inward through the side wall (12) is supported. It is possible to completely prevent the electrode (1) from being applied. Further, as shown in FIG. 6, on the outer peripheral surface of the internal thread (22e) formed on the inner wall (22d) of the large diameter portion (22a) of the mounting hole (22) of the radiator (21) and the fixing member (51). The fixing member (51) is fixed between the inner wall (22d) and the side wall (12) of the large-diameter portion (22a) of the mounting hole (22) by screwing the formed male screw (51a). May be. Further, the outer peripheral surface of the fixing member (31) is subjected to a known knurling process so that the outer wall of the large-diameter portion (22a) of the mounting hole (22) of the radiator (21) and the outer periphery of the fixing member (31). The surface may be further adhered. In addition, a gap formed between the outer inclined surface (11c) of the support electrode (1) and the inner inclined surface (22b) of the mounting hole (22) of the radiator (21) when the fixing member (31) is press-fitted is soldered or the like. It may be filled with brazing material. In this case, there is an advantage that the thermal conductivity and electrical connection between the support electrode (1) and the radiator (21) can be obtained stably. Furthermore, as shown in FIG. 7, the present invention can also be applied to a diode device (40) having a structure in which a semiconductor chip (2) is fixed on a flat support electrode (1). The shapes and structures of the semiconductor chip (2), the lead electrode (3), and the resin coating (4) shown in the figure do not limit the present invention.

本発明は、自動車用交流発電機に使用される出力整流ダイオード等の高い放熱性が要求されるダイオード装置に良好に適用することができる。   The present invention can be favorably applied to a diode device that requires high heat dissipation, such as an output rectifier diode used in an automotive alternator.

本発明による半導体装置を自動車用交流発電機の出力整流ダイオードに適用した一実施の形態を示す断面図Sectional drawing which shows one Embodiment which applied the semiconductor device by this invention to the output rectifier diode of the alternating current generator for motor vehicles 固定部材を装着した状態を示す断面図Sectional drawing which shows the state which attached the fixing member 図1のダイオード装置の平面図Plan view of the diode device of FIG. 本発明によるダイオード装置の第1の変更実施の形態を示す断面図Sectional drawing which shows the 1st modified embodiment of the diode apparatus by this invention 本発明によるダイオード装置の第2の変更実施の形態を示す断面図Sectional drawing which shows 2nd modified embodiment of the diode apparatus by this invention 本発明によるダイオード装置の第3の変更実施の形態を示す断面図Sectional drawing which shows the 3rd modification embodiment of the diode apparatus by this invention 本発明によるダイオード装置の他の実施の形態を示す断面図Sectional drawing which shows other embodiment of the diode apparatus by this invention. 従来の圧入型ダイオード装置を示す断面図Sectional view showing a conventional press-fit diode device 放熱体の装着孔内に圧入される図8のダイオード装置の断面図8 is a cross-sectional view of the diode device shown in FIG.

符号の説明Explanation of symbols

(1)・・支持電極、 (1a)・・外周面、 (1b)・・上面、 (1c)・・底面、 (1d)・・周縁部、 (1e)・・外側傾斜面、 (2)・・半導体チップ(半導体素子)、 (2b)・・他方の電極面、 (2c)・・一方の電極面、 (3)・・リード電極、 (4)・・樹脂被覆体、 (6)・・ろう材、 (7)・・支持部、 (10,40)・・ダイオード装置、 (11)・・底壁、 (11a)・・底面、 (11b)・・上面、 (11c)・・外側傾斜面、 (11d)・・フランジ、 (12)・・側壁、 (13)・・ヘッダ、 (14)・・凹部、 (14b)・・内部底面、 (17)・・軸部、 (21)・・放熱体、 (21a)・・底面、 (22)・・装着孔、 (22a)・・大径部、 (22b)・・内側傾斜面、 (22c)・・段部、 (22d)・・内壁、 (22e)・・雌ねじ、 (30)・・従来のダイオード装置、 (31,51)・・固定部材、 (41)・・樹脂製の固定部材、 (51a)・・雄ねじ、   (1) ・ ・ Support electrode, (1a) ・ ・ Outer peripheral surface, (1b) ・ ・ Top surface, (1c) ・ ・ Bottom surface, (1d) ・ ・ Rim, (1e) ・ ・ Outer inclined surface, (2)・ ・ Semiconductor chip (semiconductor element), (2b) ・ ・ Other electrode surface, (2c) ・ ・ One electrode surface, (3) ・ ・ Lead electrode, (4) ・ ・ Resin coating, (6) ・· Brazing material, (7) · · Support, (10,40) · · Diode device, (11) · · Bottom wall, (11a) · · Bottom, (11b) · · Top surface, (11c) · · Outside Inclined surface, (11d) ・ ・ Flange, (12) ・ ・ Side wall, (13) ・ ・ Header, (14) ・ ・ Recess, (14b) ・ ・ Inner bottom, (17) ・ ・ Shaft, (21)・ ・ Heat radiator, (21a) ・ ・ Bottom, (22) ・ ・ Mounting hole, (22a) ・ ・ Large diameter part, (22b) ・ ・ Inner inclined surface, (22c) ・ ・ Step, (22d) ・・ Inner wall, (22e) ・ ・ Female screw, (30) ・ ・ Conventional diode device (31,51) ・ ・ Fixing member, (41) ・ ・ Resin fixing member, (51a) ・ ・ Male screw,

Claims (5)

底壁及び該底壁の外周部に形成された筒状の側壁により皿状の凹部を形成する支持電極と、前記凹部内の前記底壁上に配置された半導体素子と、該半導体素子に固着されたリード電極と、前記凹部内に充填されて前記半導体素子及びリード電極の一部を被覆する樹脂被覆体とを備え、
前記支持電極の底壁は、該底壁の底面に向かって先細の円錐状に形成された外側傾斜面を備え、
該外側傾斜面は、前記側壁との接続部において前記側壁から径方向外側に突出して前記底壁の最大直径を有するフランジを形成し、
金属製の放熱体に形成された装着孔内に前記支持電極を嵌合するとき、前記外側傾斜面は、前記放熱体の装着孔を形成する内側傾斜面に当接し、
前記装着孔の内側傾斜面の上方に形成された大径部の内壁と前記側壁との間に固着する環状の固定部材により、前記底壁のフランジを前記装着孔の内側傾斜面に対して押圧することを特徴とする半導体装置。
A support electrode forming a dish-shaped recess by a bottom wall and a cylindrical side wall formed on the outer periphery of the bottom wall, a semiconductor element disposed on the bottom wall in the recess, and fixed to the semiconductor element A lead electrode, and a resin coating that fills the recess and covers a part of the semiconductor element and the lead electrode,
The bottom wall of the support electrode includes an outer inclined surface formed in a conical shape tapered toward the bottom surface of the bottom wall;
The outer inclined surface forms a flange having a maximum diameter of the bottom wall projecting radially outward from the side wall at a connection portion with the side wall;
When the support electrode is fitted in a mounting hole formed in a metal radiator, the outer inclined surface is in contact with an inner inclined surface that forms the mounting hole of the radiator,
The flange of the bottom wall is pressed against the inner inclined surface of the mounting hole by an annular fixing member fixed between the inner wall of the large diameter portion formed above the inner inclined surface of the mounting hole and the side wall. A semiconductor device comprising:
前記装着孔に形成された大径部の内壁内に前記固定部材を圧入し、又は前記大径部の内壁と前記固定部材の外周面とに形成されたねじにより、前記固定部材を固着した請求項1に記載の半導体装置。   The fixing member is press-fitted into the inner wall of the large-diameter portion formed in the mounting hole, or the fixing member is fixed by screws formed on the inner wall of the large-diameter portion and the outer peripheral surface of the fixing member. Item 14. The semiconductor device according to Item 1. 前記放熱体と同種又は前記支持電極よりも弾性係数の低い金属により前記固定部材を形成した請求項1又は2に記載の半導体装置。   The semiconductor device according to claim 1, wherein the fixing member is formed of a metal that is the same type as the heat radiating body or has a lower elastic coefficient than the support electrode. 前記放熱体の装着孔に形成された大径部と前記支持電極の側壁との間に前記固定部材を固着する際に、前記側壁が径方向内側に弾性変形する請求項1〜3の何れか1項に記載の半導体装置。   The side wall is elastically deformed radially inward when the fixing member is fixed between the large-diameter portion formed in the mounting hole of the radiator and the side wall of the support electrode. 2. A semiconductor device according to item 1. 上面に半導体素子が固着された板状の支持電極と、前記半導体素子に固着されたリード電極と、前記半導体素子及びリード電極の一部を被覆する樹脂被覆体とを備え、
前記支持電極の周縁部は、該支持電極の底面に向かって先細の円錐状に形成された外側傾斜面を備え、
金属製の放熱体に形成された装着孔内に前記支持電極を嵌合するとき、前記外側傾斜面は、前記放熱体の装着孔を形成する内側傾斜面に当接し、
前記装着孔の内側傾斜面の上方に形成された大径部の内壁内に圧入する環状の固定部材により、前記支持電極の周縁部を前記装着孔の内側傾斜面に対して押圧することを特徴とする半導体装置。
A plate-like support electrode having a semiconductor element fixed on the upper surface, a lead electrode fixed to the semiconductor element, and a resin coating covering a part of the semiconductor element and the lead electrode,
The peripheral edge portion of the support electrode includes an outer inclined surface formed in a conical shape tapered toward the bottom surface of the support electrode,
When the support electrode is fitted in a mounting hole formed in a metal radiator, the outer inclined surface is in contact with an inner inclined surface that forms the mounting hole of the radiator,
The peripheral portion of the support electrode is pressed against the inner inclined surface of the mounting hole by an annular fixing member press-fitted into the inner wall of the large diameter portion formed above the inner inclined surface of the mounting hole. A semiconductor device.
JP2006340349A 2006-12-18 2006-12-18 Semiconductor device Pending JP2008153464A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006340349A JP2008153464A (en) 2006-12-18 2006-12-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006340349A JP2008153464A (en) 2006-12-18 2006-12-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JP2008153464A true JP2008153464A (en) 2008-07-03

Family

ID=39655317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006340349A Pending JP2008153464A (en) 2006-12-18 2006-12-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2008153464A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012523109A (en) * 2009-04-01 2012-09-27 シーメンス アクチエンゲゼルシヤフト Circuit structure and method of operating an electric circuit
WO2015111202A1 (en) * 2014-01-27 2015-07-30 株式会社日立製作所 Semiconductor module
US10082851B2 (en) 2016-08-15 2018-09-25 Fujitsu Limited Cooling apparatus and information processing apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012523109A (en) * 2009-04-01 2012-09-27 シーメンス アクチエンゲゼルシヤフト Circuit structure and method of operating an electric circuit
WO2015111202A1 (en) * 2014-01-27 2015-07-30 株式会社日立製作所 Semiconductor module
US9754855B2 (en) 2014-01-27 2017-09-05 Hitachi, Ltd. Semiconductor module having an embedded metal heat dissipation plate
US10082851B2 (en) 2016-08-15 2018-09-25 Fujitsu Limited Cooling apparatus and information processing apparatus

Similar Documents

Publication Publication Date Title
JP5975909B2 (en) Semiconductor device
EP1858077A2 (en) Heat sink electronic package having compliant pedestal
JP2009044156A (en) Circuit support structure with improved heat dissipation
JP6705394B2 (en) Semiconductor module and inverter device
WO2018193827A1 (en) Metal member-equipped substrate, circuit structure, and electrical connection box
KR101443980B1 (en) Contact pin and power module package having the same
JP2017208423A (en) Circuit structure
JP2004072106A (en) Adjustable pedestal thermal interface
JP2010186931A (en) Power semiconductor device
JP2008153464A (en) Semiconductor device
KR20180125107A (en) Led module type heat sink insert structure
JP2006353067A (en) Control circuit unit for motor and manufacturing method therefor, and motor equipped with the control circuit unit for motor
JP4367376B2 (en) Power semiconductor device
JP4882434B2 (en) Semiconductor device
JP2009043925A (en) Semiconductor device and method for mounting the same
JP3675767B2 (en) Diode, diode press-fitting method, diode mounting method, and fin
JP2008218918A (en) Semiconductor device
JP2009081376A (en) Semiconductor device
JP2002261210A (en) Semiconductor device
JP5823706B2 (en) Semiconductor device
CN111615866B (en) Circuit board heat sink structure and method therefor
JP3159090U (en) Semiconductor device
JP4061647B2 (en) Semiconductor device
JP2004186225A (en) Press-fit fixed semiconductor module and method for fixing the same
JP3159633U (en) Semiconductor device