JP2008141086A - Substrate processing equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus capable of measuring temperature and temperature distribution in a silicon substrate, accompanying operation and in a silicon substrate being heat-treated in-line. <P>SOLUTION: The apparatus for treating substrate has a thermography system 28, where thermography system measures the temperature and the temperature distribution of the silicon substrate W being heat-treated by a heating plate 10, and a lens comprising the optical system of the thermography system 28 is formed by a germanium material. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for performing a heat treatment or the like on a silicon substrate.

  In a semiconductor device manufacturing process, a product is manufactured by applying a series of processes such as resist coating, exposure, development, and etching to a silicon substrate by using a photolithography technique. Among these series of processes, for example, a plurality of processing units that respectively perform resist coating processing and development processing and heat treatment associated therewith, and a plurality of transfer robots that transfer substrates between these processing units are provided. Substrate processing apparatuses (generally called “coaters and developers”) are widely used. An exposure apparatus is also provided in such a substrate processing apparatus, and a series of processes from resist coating to exposure and development are performed.

  In the case of manufacturing the semiconductor device described above, for example, when heat treating a silicon substrate, the silicon substrate is placed directly or close to the upper surface of a heat plate (hot plate), and a heater built in the heat plate To heat the silicon substrate. In such a substrate heat treatment step, for example, the temperature distribution of the silicon substrate during the heat treatment performed after the photoresist coating process affects the film thickness of the resist formed on the substrate surface. Also, the temperature distribution of the silicon substrate during the heat treatment (post-exposure bake (PEB) treatment) performed after the exposure for the purpose of uniformly diffusing the product generated by the photochemical reaction by the exposure inside the resist film, or after the development processing. The temperature distribution of the silicon substrate during the heat treatment affects the pattern line width formed in the resist film. In addition, it is known that the temperature and temperature distribution of the silicon substrate at various points in time affect various processing qualities such as the oxide film thickness and film quality after heat treatment. Therefore, in order to monitor whether or not the silicon substrate is uniformly heated to a constant temperature, it is necessary to measure the temperature and temperature distribution of the silicon substrate actually processed. Furthermore, not only the temperature and temperature distribution of the silicon substrate during the heat treatment, but also the temperature and temperature distribution of the silicon substrate before and during the photoresist coating process, such as the film thickness of the resist formed on the substrate surface, etc. Affects quality.

Here, as a method of measuring the temperature of the substrate, conventionally, the temperature of the substrate is measured by directly attaching the detection end of a thermocouple or a resistance temperature detector to the substrate, or a radiation thermometer is used. A method of measuring the temperature of the substrate without contacting the substrate is used (for example, refer to Patent Document 1). When viewing the temperature distribution of the substrate, a plurality of thermocouples or resistance temperature detectors are attached to the substrate, and the temperatures at a plurality of locations on the substrate are individually measured.
Japanese Patent Laying-Open No. 2005-11852 (page 6-7, FIG. 1, FIG. 3, FIG. 4)

  In the measurement of the temperature of the substrate by a thermocouple, a current is passed through the thermocouple, the voltage value at that time is measured, and this voltage value is converted into temperature. In the measurement of the substrate temperature by the resistance temperature detector, a current is passed through the resistance temperature detector, the current value at that time is measured, and the current value is converted into temperature. Therefore, since the temperature measurement is performed by connecting the sensor unit and the measurement unit of the thermocouple with a conducting wire, it is impossible to directly measure the temperature of the substrate accompanied by the operation or the substrate being processed. In recent years, there are thermocouples that do not require conductive wires, but even when such thermocouples are used, it is difficult to directly measure the temperature of the substrate being processed.

  On the other hand, if a radiation thermometer is used, it is possible to measure the temperature of the substrate accompanied by the operation or the substrate being processed. However, since the radiation thermometer has no spatial resolution, a single radiation thermometer cannot see the temperature distribution of the substrate. For this reason, when using a radiation thermometer to look at the temperature distribution of the substrate, it is necessary to install a plurality of radiation thermometers. It is difficult.

  As described above, the method using a thermocouple or a resistance temperature detector cannot measure the temperature of a substrate that accompanies operation or the substrate being processed. Moreover, in the method using a radiation thermometer, it is difficult to see the temperature distribution of the substrate. For this reason, conventionally, it has not been possible to monitor the temperature and temperature distribution of a substrate in-line and monitor whether or not an abnormality in the temperature or temperature distribution of the substrate has occurred.

  The present invention has been made in view of the circumstances as described above, and provides a substrate processing apparatus capable of measuring in-line the temperature and temperature distribution of a silicon substrate with operation and a silicon substrate being processed. Objective.

  According to a first aspect of the present invention, there is provided a substrate processing apparatus for processing a silicon substrate, comprising a thermography for measuring a temperature and a temperature distribution of the silicon substrate before or during the processing of the silicon substrate, and comprising an optical system for the thermography. The lens to be formed is formed of a germanium material.

  According to a second aspect of the present invention, in the substrate processing apparatus according to the first aspect, when there is an abnormality in the temperature or temperature distribution of the silicon substrate measured by the thermography, the abnormal silicon substrate is inspected. Or return to the previous processing step, adjust the processing conditions when processing the abnormal silicon substrate in the subsequent processing step, or from the abnormal silicon substrate in the previous processing step It is characterized by comprising control means for adjusting processing conditions of a silicon substrate to be processed later or instructing to move the abnormal silicon substrate to a regeneration process.

  According to a third aspect of the present invention, in the substrate processing apparatus according to the first aspect, when there is an abnormality in the temperature or temperature distribution of the silicon substrate measured by the thermography, the silicon substrate is imaged by a visible camera. Any of a plurality of chips on the silicon substrate based on the size and position information of the chip on the silicon substrate, or based on the size and position information of the chip on the silicon substrate previously stored in the memory. Identify whether there is an abnormality in the chip, move the silicon substrate to the inspection process, inspect the plurality of chips on the silicon substrate or only the abnormal chip among the plurality of chips, and go to the previous processing process The silicon substrate is returned or a different one of the plurality of chips on the silicon substrate in the subsequent processing steps. Do not process only the defective chip, or sequentially store the abnormal chip for the silicon substrate, and in the process of progressing the processing step, the abnormal chip for the silicon substrate And a control means for instructing to move or discard the silicon substrate to a recycling step when the ratio exceeds a predetermined numerical value.

  According to a fourth aspect of the present invention, in the substrate processing apparatus according to the second or third aspect, the processing of the silicon substrate is a heat treatment in which the silicon substrate is heated with a hot plate, and the silicon substrate is heat-treated during the heat treatment of the silicon substrate. The temperature and temperature distribution of the substrate are measured by the thermography.

  According to a fifth aspect of the present invention, in the substrate processing apparatus of the first aspect, the silicon substrate is processed by placing a silicon substrate directly or in proximity to a top surface of a heat plate in which a heater is provided. A heat treatment for heating the substrate, and based on the temperature and temperature distribution of the silicon substrate measured by the thermography, the heater is feedback-controlled so that the temperature and temperature distribution of each silicon substrate to be sequentially heat treated are equal to each other. Means are provided.

  According to a sixth aspect of the present invention, in the substrate processing apparatus of the first aspect, the silicon substrate is processed by placing a silicon substrate directly or in proximity to a top surface of a heat plate in which a heater is provided. A silicon substrate that is a heat treatment for heating a substrate, wherein the thermal plate is divided into a plurality of sections in a plan view, and each of the sections is provided with a separately controllable divided heater, and measured by the thermography. Each region corresponding to each section of the thermal plate of the silicon substrate, based on the temperature and temperature distribution of the substrate and the information on the position and the planar size stored in advance corresponding to each section of the thermal plate. And a control means for performing feedback control of each of the divided heaters so that the average temperatures at the same are equal to each other. .

  According to a seventh aspect of the present invention, in the substrate processing apparatus according to the first aspect, the silicon substrate is processed by placing a silicon substrate directly or close to an upper surface of a heat plate in which a heater is provided. A silicon substrate that is a heat treatment for heating a substrate, wherein the thermal plate is divided into a plurality of sections in a plan view, and each of the sections is provided with a separately controllable divided heater, and measured by the thermography. Each region corresponding to each section of the thermal plate of the silicon substrate, based on the temperature and temperature distribution of the substrate and the information on the position and the planar size stored in advance corresponding to each section of the thermal plate. Each of the divided heaters is provided with control means for feedback control so that the integrated temperatures are equal to each other. .

  According to an eighth aspect of the present invention, in the substrate processing apparatus of the first aspect, the silicon substrate is processed by placing a silicon substrate directly or in proximity to an upper surface of a heat plate provided with a heater. A heat treatment for heating the substrate, wherein a plurality of the thermal plates are provided, the thermography is disposed for each of the thermal plates, and the temperature and temperature distribution of the silicon substrate measured by the thermography Control means for feedback-controlling the heaters of the respective heat plates is provided so that the temperatures and temperature distributions of the respective silicon substrates supported on the heat plates and heat-treated are equal to each other.

  The invention according to claim 9 is the substrate processing apparatus according to claim 1, comprising a plurality of processing units that simultaneously perform the same kind of processing on a plurality of silicon substrates, and for each of the processing units, an objective lens and The tip of the fiberscope in which each eyepiece is made of germanium material is disposed so that the silicon substrate is positioned within the viewing angle of the objective lens at the tip, and the eyepiece side of each fiberscope is The thermography is optically connected to each other through switching means for selectively switching transmission lines.

  According to a tenth aspect of the present invention, in the substrate processing apparatus according to the ninth aspect, the processing unit is a heat treatment unit that heats the silicon substrate with a heat plate.

In the substrate processing apparatus according to the first aspect, the temperature and temperature distribution of the silicon substrate are measured by thermography before or during the processing of the silicon substrate. This thermography can measure the temperature and temperature distribution of the silicon substrate without contact with the silicon substrate, and can measure the in-plane temperature distribution of the silicon substrate with a single instrument.
Here, since the silicon substrate transmits light in a wavelength region of 1.1 μm or more, in the thermography having a detection wavelength band of 3 μm to 5 μm or 8 μm to 14 μm, which is generally commercially available, Temperature and temperature distribution cannot be measured. Therefore, in order to measure the temperature and temperature distribution of the silicon substrate, for example, a thermography having a detection wavelength band of 0.7 μm to 1.0 μm may be used. However, in the wavelength range of 0.7 μm to 1.0 μm, sufficient infrared energy (thermal energy) radiation intensity from the silicon substrate cannot be obtained near room temperature. For this reason, it is essential for the thermographic lens to transmit infrared rays efficiently, but infrared absorption occurs in a silicon lens generally used in commercially available thermography. On the other hand, a lens formed of a germanium material has a high transmittance and does not absorb infrared rays. Therefore, the thermography can efficiently measure the temperature and temperature distribution of the silicon substrate.
Therefore, when this substrate processing apparatus is used, the temperature and temperature distribution of the silicon substrate that is in motion and the silicon substrate being processed are measured in-line to determine whether there is an abnormality in the temperature or temperature distribution of the silicon substrate. Can be monitored.

  In the substrate processing apparatus according to the second aspect of the invention, when there is an abnormality in the temperature or temperature distribution of the silicon substrate measured by thermography, the abnormal silicon substrate is sent to the inspection process by a command signal from the control means. Transferred or returned to the previous processing step, the processing conditions when processing the silicon substrate that was abnormal in the subsequent processing step are adjusted, or after the silicon substrate that was abnormal in the previous processing step The processing conditions of the silicon substrate to be processed are adjusted, or the abnormal silicon substrate is moved to the regeneration process.

  In the substrate processing apparatus according to the third aspect of the present invention, when there is an abnormality in the temperature or temperature distribution of the silicon substrate measured by thermography, a plurality of pieces on the silicon substrate are determined based on chip size and position information on the silicon substrate. It is specified which one of the chips is abnormal, and the silicon substrate including the defective chip is transferred to the inspection process by the command signal from the control means, or inspected, or the abnormal chip The silicon substrate containing is returned to the previous processing step. Alternatively, in the subsequent processing steps, only the abnormal chip among the plurality of chips on the silicon substrate is not processed, thereby eliminating wasteful processing and improving processing efficiency. Can do. Alternatively, in the process of sequentially storing chips having an abnormality with respect to the silicon substrate and proceeding with processing steps, when the ratio of chips having an abnormality with respect to the silicon substrate exceeds a predetermined value, in other words When the ratio of the chips excluding the abnormal chips with respect to the silicon substrate falls below a predetermined yield, the silicon substrate is moved to a recycling process or discarded. In this way, the yield in the silicon substrate can be managed, and the processing efficiency is improved by not performing the subsequent processing steps for the silicon substrate below the predetermined yield. Can do.

  In the substrate processing apparatus of the invention according to claim 4, when the temperature and temperature distribution of the silicon substrate are measured by thermography during the heat treatment of the silicon substrate, and abnormality of the temperature or temperature distribution of the silicon substrate is detected, the abnormality is detected. The existing silicon substrate is transferred to, for example, an inspection process or returned to a previous processing process.

  In the substrate processing apparatus according to the fifth aspect of the invention, the heater is feedback-controlled by the control means based on the temperature and temperature distribution of the silicon substrate measured by thermography, and the temperature and temperature distribution of each silicon substrate that is sequentially heat-treated is determined. Each is equal. Therefore, since a plurality of silicon substrates can be uniformly heated in a plane at a constant temperature, the resist film thickness uniformity formed on the substrate surface, the pattern line width uniformity formed on the resist film, etc. Various heat treatment quality can be improved.

  In the substrate processing apparatus according to the sixth aspect of the present invention, the temperature and temperature distribution of the silicon substrate measured by the thermography and the information on the pre-stored position and planar size respectively corresponding to each section of the heat plate are measured by the control means. Based on the above, the divided heaters arranged for each section of the heat plate are individually feedback-controlled, and the average temperatures of the silicon substrates in the respective regions corresponding to the sections of the heat plate are equalized. Accordingly, since the entire surface of the silicon substrate can be heated uniformly, the quality of various heat treatments such as the uniformity of the film thickness of the resist formed on the substrate surface and the uniformity of the pattern line width formed on the resist film are improved. be able to.

  In the substrate processing apparatus according to the seventh aspect of the invention, the temperature and temperature distribution of the silicon substrate measured by the thermography and the information on the pre-stored position and planar size respectively corresponding to each section of the thermal plate are measured by the control means. Based on the above, the divided heaters arranged for each section of the heat plate are individually feedback-controlled, and the integrated temperature becomes equal for each region of the silicon substrate corresponding to each section of the heat plate. . Since the integrated temperatures are equal for each region of the silicon substrate, the total amount of heat actually applied from each divided heater to each region of the silicon substrate within the same time is equal. Accordingly, since the entire surface of the silicon substrate can be heated uniformly, the quality of various heat treatments such as the uniformity of the film thickness of the resist formed on the substrate surface and the uniformity of the pattern line width formed on the resist film are improved. be able to.

  In the substrate processing apparatus according to the eighth aspect of the invention, the temperature and temperature distribution of the silicon substrate during the heat treatment are measured by thermography for each thermal plate. Based on the temperature and temperature distribution of the silicon substrate measured by each thermography, the control unit performs feedback control of the heaters disposed on the respective heat plates, so that the temperature and temperature distribution of each silicon substrate are equal. Become. Therefore, since the temperature difference of the silicon substrate between the heat plates can be eliminated, various heat treatment qualities such as uniformity of resist film thickness formed on the substrate surface and pattern line width uniformity formed on the resist film Can be improved.

  In the substrate processing apparatus of the invention according to claim 9, infrared energy (thermal energy) radiated from the surface of the silicon substrate processed by the processing unit is transmitted to the thermography through the fiberscope, so that the silicon substrate is obtained by thermography. Temperature and temperature distribution can be measured. Further, by switching the switching means, the temperature and temperature distribution of a plurality of silicon substrates processed simultaneously by a plurality of processing units can be measured and monitored by a single thermography. In this case, since the temperature and temperature distribution of each silicon substrate processed by a plurality of processing units are measured by a common thermography, the temperature calibration of the thermography is performed when comparing the temperature and temperature distribution of each silicon substrate. There is no need. In addition, each processing unit only has a fiberscope tip, and only one thermography needs to be installed outside the processing unit. This saves space for the processing unit and saves equipment space. Can be used.

  In the substrate processing apparatus according to the tenth aspect of the present invention, the temperature and temperature distribution of a plurality of silicon substrates heat-treated by a plurality of heat treatment units can be measured and monitored by a single thermography.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the best embodiment of the present invention will be described with reference to the drawings.
1 and 2 show an example of an embodiment of the present invention, FIG. 1 is a schematic diagram showing a schematic configuration of a substrate processing apparatus, and FIG. 2 is a schematic diagram showing a part of the configuration. . The substrate processing apparatus includes a heat plate 10 on which a silicon substrate W is placed on an upper surface, and a chamber 12 that covers the entire upper surface of the heat plate 10 so as to be openable and closable.

  Although not shown, the heat plate 10 is provided with a plurality of, for example, three support pins that go up and down through the heat plate 10, and the silicon substrate W is carried in by raising and lowering the support pins. At the time of unloading, the silicon substrate W is transferred between the substrate transfer robot (not shown) and the heat plate 10.

  The chamber 12 has a double wall structure including a purge box 14 and an outer casing 16. The purge box 14 has a gas introduction space 18, and a gas supply pipe 20 that is connected to a supply source of a purge gas, for example, nitrogen gas, is connected to the gas introduction space 18. The gas introduction space 18 communicates with the upper surface side space of the heat plate 10 through a plurality of micro holes 22 formed in the bottom surface of the purge box 14. Then, the nitrogen gas introduced into the gas introduction space 18 from the gas supply source through the gas supply pipe 20 is uniform from the gas introduction space 18 to the surface of the silicon substrate W on the heat plate 10 through the plurality of fine holes 22. Can be sprayed on. A gas exhaust path 24 is formed between the inner surface of the outer casing 16 and the outer surface of the purge box 14, and the gas exhaust path 24 communicates with the gas exhaust pipe 26 at the ceiling of the outer casing 16. Then, nitrogen gas blown out from the gas introduction space 18 through the plurality of fine holes 22 toward the surface of the silicon substrate W on the heat plate 10 flows toward the periphery of the heat plate 10, and the periphery of the heat plate 10. The gas flows into the gas discharge path 24 from the section, and is exhausted from the gas discharge path 24 through the gas discharge pipe 26.

  A thermography 28 is attached to the chamber 12 so as to face the surface of the silicon substrate W. The thermography 28 is attached so that the temperature of the entire surface of the silicon substrate W on the heat plate 10 can be measured. As shown in FIG. 2, the thermography 28 includes a lens 28a that forms an optical system that collects infrared energy (thermal energy), a detector 28b that converts infrared energy incident through the lens 28a into an electrical signal, and a detector. The signal processing unit 28c is configured to amplify the signal output from 28b. Here, since the silicon substrate W transmits light in a wavelength region of 1.1 μm or more, in a thermography having a wavelength region of 3 μm to 5 μm or 8 μm to 14 μm, which is generally commercially available, W temperature and temperature distribution cannot be measured. For this reason, for example, a thermography having a detection wavelength band in a wavelength range of 0.7 μm to 1.0 μm is used. In this case, in the wavelength range of 0.7 μm to 1.0 μm, sufficient infrared energy radiation intensity from the silicon substrate W cannot be obtained near room temperature. For this reason, when a silicon lens generally used in commercially available thermography is used, infrared rays hardly enter the detector 28b due to infrared absorption by the lens. Therefore, in the thermography 28, the lens 28a is formed of a germanium material. The lens 28a formed of the germanium material in this way has a high transmittance with respect to infrared rays in a wavelength region of 0.7 μm to 1.0 μm and hardly absorbs infrared rays in the lens 28a. A small amount of infrared energy is directly incident on the detector 28b.

  The thermography 28 is connected to a CPU 30, and a color monitor 32 and a memory 34 are connected to the CPU 30. The CPU 30 is connected to the main controller 36 of the substrate processing apparatus. The memory 34 stores a threshold value for determining whether the temperature or temperature distribution of the silicon substrate W measured by the thermography 28 is abnormal. In the CPU 30, the measured value of the temperature or temperature distribution of the silicon substrate W measured by the thermography 28 is compared with the threshold value read from the memory 34, and when it is determined that the measured value by the thermography 28 is abnormal. A signal is sent from the CPU 30 to the main controller 36. Then, according to the control signal output from the main controller 36, the abnormal silicon substrate is transferred to the inspection process after the heat treatment process or returned to the previous process process, or the silicon substrate having an error in the subsequent process process is detected. The processing conditions for performing processing are adjusted.

  3 and 4 show an example of a substrate processing system in which a substrate processing apparatus having the configuration shown in FIG. 1 is incorporated, and shows the order in which the silicon substrates move between the processing units. It is a figure explaining a series of substrate processing processes. The series of substrate processing steps shown in FIGS. 3 and 4 are a resist coating process and a developing process, and a heat treatment and an exposure process associated therewith, and an apparatus called a “coater & developer” is generally used for an exposure apparatus. It is done side by side. FIG. 3 shows from the resist coating process to the exposure process, and FIG. 4 shows from the exposure process to the development process. Hereinafter, processing operations in the substrate processing system will be described, but detailed description and illustration of each processing unit will be omitted.

  First, in the indexer unit 40, an unprocessed silicon substrate is taken out from the carrier placed on the mounting table by the substrate transfer mechanism, the silicon substrate is transferred from the substrate transfer mechanism to the transfer robot, and the silicon substrate is transferred by the transfer robot. The silicon substrate is cooled by the cool plate 41 by being transferred to the cool plate 41. The cooled silicon substrate is transferred to the coating processing unit 43 by the transfer robot. In this transfer process, the temperature and temperature distribution of the moving silicon substrate are measured by the thermography 42 to obtain the temperature and temperature distribution of the silicon substrate. Monitor for abnormalities. And when an abnormality of the temperature or temperature distribution of the silicon substrate is detected, for example, when the temperature of a part of the silicon substrate is not lowered to a predetermined temperature or the temperature distribution in the substrate surface is not within an allowable range, The abnormal silicon substrate is returned to the original cool plate 41 and cooled again. If there is no abnormality in the temperature and temperature distribution of the silicon substrate measured by the thermography 42, the silicon substrate is directly transferred to the coating processing unit 43 by the transfer robot.

  In the coating processing unit 43, a coating solution for forming an antireflection film is applied to the surface of the silicon substrate. When the coating processing in the coating processing unit 43 is completed, the silicon substrate is transported to the heat plate 44 by the transport robot. Then, the silicon substrate is heated by the heat plate 44 to dry the coating solution on the silicon substrate, and a base antireflection film is formed on the silicon substrate. In this heat treatment process, the temperature and temperature distribution of the silicon substrate during the heat treatment are measured by the thermography 45 using the apparatus having the configuration shown in FIG. 1 to monitor whether the temperature and temperature distribution of the silicon substrate are normal. . The silicon substrate after the heat treatment is transferred to the cool plate 46 by the transfer robot and cooled by the cool plate 46. When the temperature or temperature distribution of the silicon substrate measured by the thermography 45 is abnormal, for example, the silicon substrate If a part of the temperature is not within the specified temperature range or the temperature distribution in the substrate surface is not within the allowable range, the abnormal silicon substrate is transported to the film thickness measurement unit and the surface of the silicon substrate is The thickness of the antireflection film formed on the film is measured by a film thickness meter 47. If there is no abnormality in the thickness of the antireflection film measured by the film thickness meter 47, the silicon substrate is returned to the original processing line, and when an abnormality in the film thickness is detected, the silicon substrate is transferred to, for example, a regeneration process.

  The silicon substrate cooled by the cool plate 46 is transferred to the coating processing unit 49 by the transfer robot. In this transfer process, the temperature and temperature distribution of the moving silicon substrate are measured by the thermography 48. Then, the thermography 48 monitors whether there is an abnormality in the temperature and temperature distribution of the silicon substrate. When an abnormality in the temperature or temperature distribution of the silicon substrate is detected, for example, the temperature of a part of the silicon substrate reaches a predetermined temperature. If the temperature does not decrease or the temperature distribution in the substrate surface is not within the allowable range, the abnormal silicon substrate is returned to the original cool plate 46 and cooled again. If there is no abnormality in the temperature and temperature distribution of the silicon substrate measured by the thermography 48, the silicon substrate is directly transferred to the coating processing unit 49 by the transfer robot.

  In the coating processing unit 49, a photoresist is coated on the surface of the silicon substrate. When the coating processing in the coating processing unit 49 is completed, the silicon substrate is transported to the heating unit 50 by the transport robot. Then, the silicon substrate is heated by the heating unit 50, and the solvent component in the photoresist formed on the silicon substrate is evaporated and removed, whereby a resist film is formed on the silicon substrate. In this heat treatment step, the temperature and temperature distribution of the silicon substrate during the heat treatment are measured by the thermography 51 using the apparatus having the configuration shown in FIG. 1 to monitor whether there is any abnormality in the temperature and temperature distribution of the silicon substrate. . The silicon substrate after the heat treatment is transferred to the cool plate 52 by the transfer robot and cooled by the cool plate 52, but when the temperature or temperature distribution of the silicon substrate measured by the thermography 51 is abnormal, for example, the silicon substrate If a part of the temperature is not within the specified temperature range or the temperature distribution in the substrate surface is not within the allowable range, the abnormal silicon substrate is transported to the film thickness measurement unit and the surface of the silicon substrate is The thickness of the resist film formed in (1) is measured by a film thickness meter 53. If there is no abnormality in the thickness of the resist film measured by the film thickness meter 53, the silicon substrate is returned to the original processing line, and when an abnormality in the film thickness is detected, the silicon substrate is transferred to, for example, a regeneration process. Then, the silicon substrate having the resist film formed on the surface is conveyed to the exposure device 54 through an interface unit (not shown), and is subjected to pattern exposure processing in the exposure device 54.

  The silicon substrate that has undergone the pattern exposure process is returned from the exposure apparatus 54 to the original apparatus through the interface unit again. Then, as shown in FIG. 4, the silicon substrate is transferred to the heating unit 55 by the transfer robot. In the heating unit 55, a heat treatment (post-exposure baking (PEB) process) for uniformly diffusing a product generated by a photochemical reaction by exposure into the resist film is performed. In this heat treatment process, the temperature and temperature distribution of the silicon substrate during the heat treatment are measured by the thermography 56 using an apparatus having the configuration shown in FIG. 1 to monitor whether there is any abnormality in the temperature and temperature distribution of the silicon substrate. . Then, when an abnormality in the temperature or temperature distribution of the silicon substrate is detected, for example, when the silicon substrate in which the abnormality is detected is heated with the heat plate 59 after being developed as described later, the heat treatment conditions The heat plate 59 is feedforward controlled so as to adjust the exposure, or the exposure apparatus 54 is feedback controlled so as to adjust the exposure condition of the silicon substrate exposed after the silicon substrate where the abnormality is detected.

  The silicon substrate after the heat treatment is transferred to the cool plate 57 by the transfer robot, cooled by the cool plate 57, and then transferred to the development processing unit 58. In the development processing unit 58, a developer is supplied onto the silicon substrate, and the exposed resist film formed on the substrate surface is developed. Then, the silicon substrate that has undergone the development processing is transported to the heat plate 59 by the transport robot, and the silicon substrate is heated by the heat plate 59. In this heat treatment step, the temperature and temperature distribution of the silicon substrate during the heat treatment are measured by the thermography 60 using the apparatus having the configuration shown in FIG. 1 to monitor whether the temperature and temperature distribution of the silicon substrate are abnormal. . The silicon substrate after the heat treatment is transferred to the cool plate 61 by the transfer robot and cooled by the cool plate 61. When the temperature or temperature distribution of the silicon substrate measured by the thermography 60 is abnormal, for example, the silicon substrate When the temperature of a part of the substrate is not within the predetermined temperature range or the temperature distribution in the substrate surface is not within the allowable range, the abnormal silicon substrate is transported to the line width measuring unit, and the line width measuring device In step 62, the width of the pattern formed on the resist film on the surface of the silicon substrate is measured. If there is no abnormality in the pattern line width measured by the line width measuring device 62, the silicon substrate is returned to the original processing line, and when an abnormality in the pattern line width is detected, the silicon substrate is transferred to, for example, a reproduction process. Then, the silicon substrate having the resist pattern formed on the surface is returned to the indexer unit 40 by the transfer robot, and the silicon substrate is transferred from the transfer robot to the substrate transfer mechanism. The indexer unit 40 uses the substrate transfer mechanism to move the silicon substrate onto the mounting table. The processed silicon substrate is stored in a carrier placed on the substrate.

  The substrate processing system for detecting the abnormality of the silicon substrate by measuring the temperature distribution of the silicon substrate accompanied by the operation and the silicon substrate being processed in-line by thermography is not limited to the one shown in the above embodiment. Used to detect foreign objects on the surface. That is, in a series of silicon substrate processing steps, the temperature distribution of the silicon substrate being transferred or being processed is measured in-line by thermography to monitor whether there is any abnormality in the temperature distribution of the silicon substrate. Then, when an abnormality in the temperature distribution of the silicon substrate is detected, there is a possibility that foreign matter has adhered to the surface of the silicon substrate, and the abnormal silicon substrate is not transferred to the next processing step. Move to the regeneration process.

  Further, the temperature and temperature distribution of the silicon substrate W can be measured by the thermography 28, and it can be monitored whether there is any abnormality in the temperature or temperature distribution of any of the plurality of chips on the silicon substrate W. For this purpose, a threshold value for determining whether or not the temperature or temperature distribution of the chip on the substrate W measured by the thermography 28 is abnormal is stored in the memory 34. Then, the CPU 30 compares the measured value of the temperature or temperature distribution of the chip on the substrate W measured by the thermography 28 with the threshold value read from the memory 34 and determines that the measured value by the thermography 28 is abnormal. The CPU 30 sends a signal identifying the chip to the main controller 36. Alternatively, the CPU 30 calculates the average value of the temperature of each chip on the substrate W measured by the thermography 28, compares the measured value of the temperature of each chip with the average value, and the measured value is within an allowable range with respect to the average value. When it is determined that it is not within, a signal specifying the chip is sent from the CPU 30 to the main controller 36.

  In order to identify which of the plurality of chips on the silicon substrate W is abnormal, a visible camera 64 is used in combination with the thermography 28 as shown in the schematic diagram of FIG. Then, by capturing an image of the substrate W with the visible camera 64, image data relating to the size and position information of the chip on the substrate W is obtained, and the image data is sent to the CPU 30. Based on the information, an abnormal chip is identified. Alternatively, data relating to the size and position information of the chip on the substrate W is stored in the memory 34 in advance, and the data is read from the memory 34 to the CPU 30 to identify which chip on the substrate W is abnormal. Like that.

  When an abnormality in the temperature or temperature distribution of the chip on the silicon substrate W is detected, an inspection process is performed after the heat treatment process on the silicon substrate W including the chip having an abnormality such as heat concentration by a control signal output from the main controller 36. To inspect only a plurality of chips on the silicon substrate W or an abnormal chip among the plurality of chips, or return the silicon substrate W including the abnormal chip to the previous processing step. Is done. Alternatively, an abnormal chip is stored in the memory 34, and thereafter, in a processing step (for example, a wire bonding step) in which processing is performed for each chip, an abnormality among a plurality of chips on the silicon substrate W is detected. In other words, the processing of only the chip that has been damaged is not performed.

  Further, in a series of substrate processing steps, as shown in a block diagram in FIG. 6, a plurality of thermography 28 a to 28 e installed in a processing unit or a conveyance path is connected to the CPU 30 and measured by the thermography 28 a to 28 e. When there is an abnormality in the temperature or temperature distribution of the chip on the silicon substrate, the silicon substrate and the chip with the abnormality on the silicon substrate are specified and sequentially stored in the memory 34. Then, each time an abnormality in the temperature or temperature distribution of the chip on the silicon substrate is detected in the process of progressing the processing step, the CPU 30 determines the ratio of the chip having an abnormality in the silicon substrate to a predetermined numerical value (threshold value). ) In other words, in other words, it is determined whether or not the ratio of chips excluding abnormal chips on the silicon substrate does not fall below a predetermined yield. As a result of this determination, when the chip yield on the silicon substrate falls below a predetermined numerical value (threshold), a signal is sent from the CPU 30 to the main controller 36, and a control signal output from the main controller 36, for example, the silicon The substrate is transferred to a recycling process or discarded. In this way, the yield on the substrate can be managed.

  Next, FIG. 7 and FIG. 8 show another embodiment of the present invention. FIG. 7 is a schematic diagram showing a schematic configuration of a control system of the substrate processing apparatus together with a sectional view of a heat plate. It is a top view of the heat plate of the substrate processing apparatus. The overall configuration of the substrate processing apparatus is the same as that shown in FIG. In addition, the same components having the same functions as those described with reference to FIG. 1 are denoted by the same reference numerals as those used in FIG. 1 in FIG. 7, and redundant descriptions thereof are omitted.

  Although not shown, the heat plate 66 is provided with a plurality of, for example, three support pins that go up and down through the heat plate 66, and the silicon substrate W is carried in by raising and lowering the support pins. At the time of unloading, the silicon substrate W is transferred between the substrate transfer robot (not shown) and the heat plate 66. The silicon substrate W is placed directly on the upper surface of the heat plate 66, or supported by a plurality of small protrusions (not shown) fixed to the upper surface of the heat plate 66, and the upper surface of the heat plate 66. And are placed close to each other through a slight gap.

  In this embodiment, the heat plate 66 is divided into three sections in plan view, and divided heaters 68a, 68b, and 68c that can be individually controlled are provided in each section. The first divided heater 68a is arranged in a circular shape at the center of the heat plate 66, and the second and third divided heaters 68b and 68c are concentrically annular with the first divided heater 68a. Each is arranged. The memory 34 stores in advance information on positions and planar sizes respectively corresponding to the three sections of the heat plate 66. Each of the divided heaters 68a, 68b, and 68c is connected to the power supply devices 70a, 70b, and 70c, respectively. Controllers 72a, 72b, and 72c connected to the CPU 32 are connected to the power supply devices 70a, 70b, and 70c, respectively. Then, a signal is sent from the CPU 32 to each of the controllers 72a, 72b, 72c, and the divided heaters 68a, 68b, The power supplied to 68c is controlled.

  In the substrate processing apparatus shown in FIG. 7, the temperature and temperature distribution of the silicon substrate W supported on the heat plate 66 and heat-treated are measured by the thermography 28, and the measurement signal is sent to the CPU 32. In the CPU 32, the temperature of the silicon substrate W and the measured value of the temperature distribution and the position / size information read from the memory 34 are used in each region of the silicon substrate W corresponding to each section of the heat plate 66. Each average temperature is calculated. Based on the calculated value, the correction amount of the supplied power for equalizing the average temperature in each region of the silicon substrate W is calculated, and a command signal is sent from the CPU 32 to each of the controllers 72a, 72b, 72c. Then, control signals are sent from the controllers 72a, 72b, 72c to the power supply devices 70a, 70b, 70c, respectively, to correct the power supplied to the divided heaters 68a, 68b, 68c. In this way, the divided heaters 68a, 68b, and 68c are individually feedback controlled, so that the average temperature in each region of the silicon substrate W becomes equal, and the temperature distribution in the substrate surface becomes uniform. Accordingly, since the entire surface of the silicon substrate W is heated uniformly, for example, the film thickness uniformity of the resist formed on the surface of the silicon substrate W is improved, or the pattern line width formed on the resist film on the substrate surface is increased. Uniformity is improved.

  Further, instead of making the average temperature in each region of the silicon substrate W equal, the integrated temperature may be made equal in each region of the silicon substrate W. That is, in the CPU 32, from the measured values of the temperature and temperature distribution of the silicon substrate W, the position / size information corresponding to each section of the heat plate 66, and the reference temperature value stored in advance in the memory 34. The integrated temperature is calculated for each region of the silicon substrate W corresponding to each section of the heat plate 66. Based on this calculated value, the correction amount of the supplied power for equalizing the integrated temperature in each region of the silicon substrate W is calculated, and a command signal is sent from the CPU 32 to each of the controllers 72a, 72b, 72c. Then, control signals are sent from the controllers 72a, 72b, 72c to the power supply devices 70a, 70b, 70c, respectively, and the power supplied to the divided heaters 68a, 68b, 68c is corrected. In this manner, the divided heaters 68a, 68b, and 68c are individually feedback controlled, so that the integrated temperatures in the respective regions of the silicon substrate W become equal. As a result, the total amount of heat actually applied from the divided heaters 68a, 68b, 68c to the respective regions of the silicon substrate W in the same time becomes equal, and the temperature distribution in the substrate surface becomes uniform.

  Further, the target temperature is stored in advance in the memory 34 so that the average temperature in each region of the silicon substrate W calculated from the temperature and temperature distribution of the silicon substrate W measured by the thermography 28 becomes the target temperature. The divided heaters 68a, 68b, and 68c may be individually feedback controlled.

  In addition, the form which divides | segments the heat plate 66 into a some division is not restricted to what divides | segments into a concentric plurality of division as shown in FIG. 8, For example, the heat | fever plate 66 is divided | segmented into the grid-like several division. For each section, a separately controllable divided heater may be provided.

  Next, FIG. 9 is a schematic view showing an embodiment in which the present invention is applied to a substrate processing apparatus having a plurality of heat treatment units. In FIG. 9, only the heat plate is shown and the overall configuration of the processing unit is not shown, but each heat treatment unit has a configuration similar to that of the apparatus shown in FIG. 1, for example.

  In this substrate processing apparatus, for each heat treatment unit, the temperature and temperature distribution of the silicon substrate W that has the same configuration as the above-described thermography 28 and is supported on the heat plates 74a, 74b, and 74c and is heat-treated are respectively shown. Thermography 76a, 76b, and 76c to be measured are arranged. Each thermography 76a, 76b, 76c is connected to the CPU 78, respectively. A memory 80 is connected to the CPU 78, and controllers 82a, 82b, and 82c are connected to the CPU 78, respectively. Each controller 82a, 82b, 82c is connected to a power supply device 84a, 84b, 84c of a heater (not shown) provided in each heat plate 74a, 74b, 74c. Then, signals are sent from the CPU 78 to the controllers 82a, 82b, and 82c, respectively, and by the control signals output from the controllers 82a, 82b, and 82c, the heat plates 74a, 74b, The power supplied to the heater 74c is controlled.

  In the substrate processing apparatus shown in FIG. 9, the temperature and temperature distribution of the silicon substrate W supported on each heat plate 74a, 74b, 74c and heat-treated are measured by each thermography 76a, 76b, 76c. Each measurement signal is sent to the CPU 78. In the CPU 78, the average temperature of each silicon substrate W is calculated from the temperature of each silicon substrate W and the measured value of the temperature distribution. Based on this calculated value, a correction amount of supplied power for equalizing the average temperature of each silicon substrate W is calculated, and a command signal is sent from the CPU 78 to each controller 82a, 82b, 82c. Then, control signals are sent from the controllers 82a, 82b and 82c to the power supply devices 84a, 84b and 84c, respectively, and the power supplied to the heaters of the heat plates 74a, 74b and 74c is corrected. In this way, the heaters of the heat plates 74a, 74b, and 74c are individually feedback controlled, so that the average temperatures of the silicon substrates W that are supported and heat-treated on the heat plates 74a, 74b, and 74c are equal. Thus, the temperature difference of the silicon substrate W between the heat plates 74a, 74b, and 74c is eliminated. Therefore, the difference in the heat treatment quality of the substrate between the heat treatment units can be eliminated.

  Further, instead of making the average temperature of each silicon substrate W equal, the integrated temperature may be made equal for each silicon substrate W. That is, the CPU 78 calculates the integrated temperature for each silicon substrate W from the temperature and temperature distribution measurement values of each silicon substrate W and the reference temperature value stored in advance in the memory 80. Based on this calculated value, a correction amount of supplied power for equalizing the accumulated temperatures of the silicon substrates W is calculated, and command signals are sent from the CPU 78 to the controllers 82a, 82b, and 82c, respectively. Then, control signals are sent from the controllers 82a, 82b and 82c to the power supply devices 84a, 84b and 84c, respectively, and the power supplied to the heaters of the heat plates 74a, 74b and 74c is corrected. In this manner, the heaters of the heat plates 74a, 74b, and 74c are individually feedback controlled, so that the integrated temperatures of the silicon substrates W that are heat-treated by the heat plates 74a, 74b, and 74c become equal. As a result, the total amount of heat actually given from the heaters of the heat plates 74a, 74b, 74c to the silicon substrates W in the same time becomes equal, and the temperature of the silicon substrate W between the heat plates 74a, 74b, 74c. The difference disappears.

  Further, the target temperature is stored in the memory 80 in advance, and the average temperature of each silicon substrate W calculated from the temperature and temperature distribution of the silicon substrate W measured by each thermography 76a, 76b, 76c is the target temperature. As such, the heaters of the heat plates 74a, 74b, and 74c may be individually feedback controlled. In addition, a specific method for performing feedback control of the heater of the thermal plate based on the temperature and temperature distribution of the silicon substrate measured by thermography may be other than that described in the above embodiment.

FIG. 10 shows still another embodiment of the present invention and is a schematic diagram showing a schematic configuration of a substrate processing apparatus.
This substrate processing apparatus is composed of a plurality of heat treatment units 86a, 86b, 86c, 86d. Each of the heat treatment units 86a, 86b, 86c, 86d includes a heat plate 88 on which the silicon substrate W is placed, and a chamber 90 that covers the entire upper surface of the heat plate 88 so as to be openable and closable. Although a detailed description and illustration are omitted, the heat plate 88 is provided with a plurality of, for example, three support pins that go up and down through the heat plate 88, and the silicon substrate W of the silicon substrate W is moved up and down by the support pins. At the time of carry-in and carry-out, the silicon substrate W is transferred between the substrate transfer robot and the heat plate 88. The silicon substrate W is placed directly on the upper surface of the heat plate 88 or is supported by a plurality of small protrusions (not shown) fixed on the upper surface of the heat plate 88 so that the upper surface of the heat plate 88 is supported. And are placed close to each other through a slight gap. The chamber 90 is provided with gas supply means for supplying a purge gas such as nitrogen gas into the chamber 90 and gas discharge means for discharging the gas to the outside.

  In each chamber 90, tip portions 94a, 94b, 94c, and 94d of fiberscopes 92a, 92b, 92c, and 92d are attached. The tip portions 94a, 94b, 94c, 94d of the fiberscopes 92a, 92b, 92c, 92d face the surface of the silicon substrate W placed on the heat plate 88 so that the silicon substrate W is within the viewing angle of the objective lens. It is arranged to be located. The eyepiece side 96a, 96b, 96c, 96d of each fiberscope 92a, 92b, 92c, 92d has a configuration similar to that of the thermography 28 described above and is switched to a single thermography 100 disposed outside the heat treatment unit. 98 are optically connected to each other. The objective lenses 94a, 94b, 94c, 94d of the fiber scopes 92a, 92b, 92c, 92d and the eyepieces of the eyepiece side 96a, 96b, 96c, 96d have a wavelength range of 0.7 μm to 1.0 μm. Each is formed of a germanium material that has high transmittance for infrared rays and hardly absorbs infrared rays. The fiberscopes 92a, 92b, 92c, and 92d are configured to be selectively optically connected to the thermography 100 by the transmission path switching operation by the switch 98. The thermography 100 is connected to a CPU 102, and a memory 104 and a color monitor 106 are connected to the CPU 102. A main controller 108 is connected to the CPU 102.

  The transmission path is switched by the switch 98, for example, at regular intervals. Infrared energy radiated from the silicon substrate W surface that is simultaneously heat-treated by the heat treatment units 86a, 86b, 86c, and 86d is sequentially transmitted to the thermography 100 via the fiberscopes 92a, 92b, 92c, and 92d, and heat treatment is performed. The temperature and temperature distribution of each silicon substrate W therein are sequentially measured by the thermography 100, and the measurement signal is sent to the CPU 102. The CPU 102 specifies which heat treatment unit the measurement signal is for the silicon substrate W being heat treated, sends the data to the color monitor 106, and displays the temperature and temperature distribution of the silicon substrate W being heat treated. Is displayed on the color monitor 106. At this time, the color monitor 106 may simultaneously display the images 110a, 110b, 110c, and 110d representing the temperature and temperature distribution of the silicon substrate W that has been heat-treated by the heat treatment units 86a, 86b, 86c, and 86d. Alternatively, images representing the temperature and temperature distribution of the silicon substrate W that has been heat-treated by each of the heat treatment units 86a, 86b, 86c, 86d may be sequentially displayed one by one at regular intervals. Alternatively, an arbitrary heat treatment unit may be designated and an image representing the temperature and temperature distribution of the silicon substrate W that has been heat treated by the heat treatment unit may be displayed on the color monitor 106.

  When the substrate processing apparatus shown in FIG. 10 is used, the temperature and temperature distribution of the silicon substrate W that is simultaneously heat-treated by the plurality of heat treatment units 86a, 86b, 86c, and 86d are not contacted with the silicon substrate W by the single thermography 100. It is possible to monitor whether or not an abnormality has occurred in the temperature or temperature distribution of the silicon substrate W that is simultaneously heat-treated by the plurality of heat treatment units 86a, 86b, 86c, 86d. In this monitoring, for example, a threshold value for determining whether or not the temperature or temperature distribution of the silicon substrate W is abnormal is stored in the memory 104, and the silicon substrate W during heat treatment measured by the thermography 100 in the CPU 102. The measured value of the temperature or temperature distribution is compared with the threshold value read from the memory 104. When it is determined that the measurement value obtained by the thermography 100 is abnormal, a signal is sent from the CPU 102 to the main controller 108, and, for example, a silicon substrate having an abnormality is subjected to a heat treatment process by a control signal output from the main controller 108. Thereafter, the process immediately moves to the inspection process, returns to the previous process process, or adjusts the process conditions for processing the silicon substrate that has failed in the subsequent process process.

  The present invention can be applied to various heat treatment apparatuses that support and heat-treat a substrate on a heat plate. In addition to a heat treatment apparatus, for example, a coating that applies a photoresist to the surface of a substrate. In the processing apparatus, the present invention can also be applied to the case of measuring and monitoring the temperature and temperature distribution of the silicon substrate during the coating process.

It is a schematic diagram which shows one example of embodiment of this invention and shows schematic structure of a substrate processing apparatus. It is a schematic diagram which shows a part of structure of the substrate processing apparatus shown in FIG. FIG. 1 shows an example of a substrate processing system incorporating a substrate processing apparatus having the configuration shown in FIG. 1, and shows a sequence of substrate processing steps by showing the order in which silicon substrates move between processing units. It is a figure to do. Similarly, it is a figure explaining a series of substrate processing steps, showing the order in which silicon substrates move between the processing units. It is a schematic diagram which shows another embodiment of this invention and shows a part of schematic structure of a substrate processing apparatus. It is a block diagram which shows a part of control system of the substrate processing system incorporating the substrate processing apparatus which concerns on embodiment shown in FIG. FIG. 10 is a schematic diagram showing still another embodiment of the present invention and showing a schematic configuration of a control system of the substrate processing apparatus together with a sectional view of a heat plate. It is a top view of the heat plate of the substrate processing apparatus shown in FIG. It is a schematic diagram which shows embodiment which applied this invention to the substrate processing apparatus provided with the several heat processing unit. It is a schematic diagram which shows another embodiment of this invention and shows schematic structure of a substrate processing apparatus.

Explanation of symbols

10, 66, 74a, 74b, 74c, 88 Heat plate 12, 90 Chamber 14 Purge box 16 Outer casing 18 Gas introduction space 20 Gas supply pipe 24 Gas exhaust path 26 Gas exhaust pipe 28, 28a, 28b, 28c, 76a, 76b 76c, 100 Thermography 28a Thermographic lens 28b Thermographic detector 28c Thermographic signal processor 30, 78, 102 CPU
32, 106 Color monitor 34, 80, 104 Memory 36, 108 Main controller 64 Visible camera 68a, 68b, 68c Split heater 70a, 70b, 70c, 84a, 84b, 84c Power supply 72a, 72b, 72c, 82a, 82b, 82c Controller 86a, 86b, 86c, 86d Heat treatment unit 92a, 92b, 92c, 92d Fiberscope 94a, 94b, 94c, 94d Fiberscope tip 96a, 96b, 96c, 96d Eyepiece side of fiberscope 98 Switcher W Silicon substrate

Claims (10)

In a substrate processing apparatus for processing a silicon substrate,
A substrate processing apparatus comprising a thermography for measuring a temperature and a temperature distribution of a silicon substrate before or during processing of the silicon substrate, and a lens forming an optical system of the thermography is formed of a germanium material. The substrate processing apparatus according to claim 1,
When there is an abnormality in the temperature or temperature distribution of the silicon substrate measured by the thermography, the abnormal silicon substrate is transferred to the inspection process or returned to the previous processing process, and the abnormality is detected in the subsequent processing process. Adjust the processing conditions when processing the defective silicon substrate, or adjust the processing conditions of the silicon substrate processed after the abnormal silicon substrate in the previous processing step, or A substrate processing apparatus comprising control means for instructing to move the silicon substrate to a regeneration process. The substrate processing apparatus according to claim 1,
When the temperature or temperature distribution of the silicon substrate measured by the thermography is abnormal, the memory is based on the size and position information of the chip on the silicon substrate obtained by imaging the silicon substrate with a visible camera, or the memory Based on the size and position information of the chip on the silicon substrate stored in advance, identify which chip out of the plurality of chips on the silicon substrate is abnormal, and move the silicon substrate to the inspection process Only a plurality of chips on the silicon substrate or an abnormal chip among the plurality of chips are inspected, and the silicon substrate is returned to the previous processing step, or on the silicon substrate in the subsequent processing steps. Do not process only the defective chip among the multiple chips, or In the process in which the abnormal chips for the substrate are sequentially stored and the processing process proceeds, when the ratio of abnormal chips for the silicon substrate exceeds a predetermined value, the silicon substrate is stored. A substrate processing apparatus comprising control means for instructing transfer to a recycling process or disposal. In the substrate processing apparatus of Claim 2 or Claim 3,
The processing of the silicon substrate is a heat treatment for heating the silicon substrate with a heat plate, and the temperature and temperature distribution of the silicon substrate are measured by the thermography during the heat treatment of the silicon substrate. The substrate processing apparatus according to claim 1,
The treatment of the silicon substrate is a heat treatment for heating the silicon substrate by placing the silicon substrate directly or in proximity to the upper surface of a heat plate in which a heater is installed, and the temperature of the silicon substrate measured by the thermography and A substrate processing apparatus comprising control means for feedback-controlling the heater so that the temperature and temperature distribution of each silicon substrate to be sequentially heat-treated are equal based on the temperature distribution. The substrate processing apparatus according to claim 1,
The treatment of the silicon substrate is a heat treatment for heating the silicon substrate by placing the silicon substrate directly or close to the upper surface of the heat plate in which the heater is installed, and the heat plate is divided into a plurality of sections in plan view. Each of the sections is divided and individually controllable divided heaters are arranged, and the temperature and temperature distribution of the silicon substrate measured by the thermography, and the sections corresponding to the sections of the heat plate are respectively preliminarily provided. Based on the stored position and planar size information, each of the divided heaters is feedback-controlled so that the average temperature in each region of the silicon substrate corresponding to each section of the thermal plate is equal. A substrate processing apparatus comprising a control means. The substrate processing apparatus according to claim 1,
The treatment of the silicon substrate is a heat treatment for heating the silicon substrate by placing the silicon substrate directly or close to the upper surface of the heat plate in which the heater is installed, and the heat plate is divided into a plurality of sections in plan view. Each of the sections is divided and individually controllable divided heaters are arranged, and the temperature and temperature distribution of the silicon substrate measured by the thermography, and the sections corresponding to the sections of the heat plate are respectively preliminarily provided. Based on the stored position and planar size information, the divided heaters are fed back so that the integrated temperatures are equal for each region of the silicon substrate corresponding to each section of the thermal plate. A substrate processing apparatus comprising control means for controlling. The substrate processing apparatus according to claim 1,
The treatment of the silicon substrate is a heat treatment for heating the silicon substrate by placing the silicon substrate directly or close to the upper surface of the heat plate in which the heater is provided. The thermography is disposed for each plate, and based on the temperature and temperature distribution of the silicon substrate measured by each thermography, the temperature and temperature distribution of each silicon substrate that is supported and heat-treated on each heat plate is A substrate processing apparatus comprising control means for feedback-controlling the heaters of the respective heat plates so as to be equal to each other. The substrate processing apparatus according to claim 1,
Provided with a plurality of processing units that simultaneously perform the same kind of processing on a plurality of silicon substrates, and for each of the processing units, a distal end portion of a fiberscope in which an objective lens and an eyepiece lens are each formed of a germanium material, The silicon substrate is disposed so as to be positioned within the viewing angle of the objective lens of each part, and the eyepiece side of each fiberscope is optically connected to the thermography via a switching means for selectively switching the transmission path. A substrate processing apparatus characterized by being connected to each other. The substrate processing apparatus according to claim 9,
The substrate processing apparatus, wherein the processing unit is a heat treatment unit for heating a silicon substrate with a heat plate.

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