JP2008140921A - Lighting device - Google Patents

Abstract

To secure a desired light emitting area and to improve the connection reliability of wire bonding between columns formed by electrode pads and semiconductor light emitting elements connected to each other by bonding wires.
A plurality of electrode pads 5 and a plurality of semiconductor light emitting elements 11 are arranged two-dimensionally on an insulating layer 3 attached to the substrate, alternately arranged in a direction in which one side 2a extends. For each of the rows L1 and L2 formed by the pad 5 and the light emitting element 11, an end electrode pad 7 forming one end of the row is arranged at an interval F similar to the interval C between the light emitting element 11 and the pad 5, The light emitting element 11, the pad 5 and the end electrode pad 7 are connected by the inner bonding wire 17. The end electrode pads 7 adjacent to each other in the direction in which the other sides 2b and 2c of the substrate perpendicular to the side 2a extend are connected by a column connection bonding wire 19. The rows L1 and L2 are arranged in the direction in which the other sides 2b and 2c extend with a distance B wider than the distances C and F between the light emitting elements 11, the pads 5 and the end electrode pads 7 in these rows. The separation distance G between the end electrode pads 7 adjacent to each other in the direction in which the other sides 2b and 2c extend is set in the same manner as the interval C.
[Selection] Figure 1

Description

  The present invention relates to an illumination device that illuminates a semiconductor light emitting element such as a plurality of LED (light emitting diode) chips.

2. Description of the Related Art Conventionally, there is known an illumination device that is used as a planar light source by connecting a plurality of LED chips that are two-dimensionally arranged in rows and columns in series or in parallel to emit light from these LED chips. In this lighting device, the LED chip is flip-chip mounted on a conductor pattern (wiring pattern) formed on a printed circuit board, but it is suggested that it may be mounted by wire bonding instead of this (for example, , See Patent Document 1).
JP 2004-193357 A (paragraphs 0002, 0012-0020, 0038, FIG. 1 to FIG. 8)

  Since Patent Document 1 does not specifically describe a technique for mounting a plurality of LED chips by wire bonding, it is naturally unknown about various problems in this technique.

  By the way, the present applicant provides LED chips and electrode pads alternately arranged on an insulating layer deposited on one surface of a device substrate, and provides a plurality of rows formed by these LED chips and electrode pads, and wire bonding. The adjacent LED chips and electrode pads in each row are electrically connected in series, and the electrode pads that are adjacent to each other in the direction orthogonal to the extending direction of each row and that are positioned at one end of each row are wired. We have developed an illuminating device in which each LED chip can be energized by being electrically connected by bonding, and the LED chip and the bonding wire are sealed with a sealing resin made of a translucent synthetic resin. In this illuminating device, each LED chip can emit light when energized and used as a planar light source.

  In such a lighting device, when the mutual interval between the columns formed by the LED chip and the electrode pad is narrower than the interval between the LED chip and the electrode pad adjacent to each other in the direction in which the column extends. In this case, the arrangement density of the LED chips is increased. Therefore, the light emission density increases and the light emission can be concentrated. However, when viewed as a planar light source, the light emission area becomes small, which is not preferable. At the same time, in wire bonding, a bonding wire that has already been bonded to the LED chip and the electrode pad by ball bonding may be an obstacle when wire bonding is performed on adjacent columns.

  For these reasons, the distance between the columns formed by the LED chip and the electrode pad may be wider than the distance between the LED chip and the electrode pad adjacent to each other in the direction in which the columns extend. However, in this case, the present inventors have clarified that the reliability of wire bonding may be impaired.

  That is, in the said structure, the length of the column connection bonding wire for connecting the electrode pads located in the edge of each adjacent row | line | column is the LED chip and electrode pad which adjoin in each row | line | column. The bonding wire is considerably longer than the bonding wire for connection, and exceeds a length of about 1.5 mm to 2.0 mm, which is generally regarded as a bonding wire length suitable for ball bonding. If the bonding wire is too short or conversely too long, stress accompanying the movement of the bonding tool is likely to be applied to the bonding portion of the bonding wire, and stress is likely to remain in the bonding portion. In addition, it is not hindered that the bonding wires embedded in the sealing resin are moved by the thermal expansion and contraction of the sealing resin accompanying the turning on and off of each LED chip. Therefore, there is a possibility that the bonding may be in a poor state due to the force acting on the bonding portion of the bonding wire, and the current supply may be interrupted.

  An object of the present invention is to provide an illuminating device that can improve the connection reliability of wire bonding between columns formed by electrode pads and semiconductor light emitting elements connected to each other by bonding wires while securing a desired light emitting area. There is.

  According to a first aspect of the present invention, there is provided a rectangular device substrate having an insulating layer deposited thereon; a plurality of electrode pads two-dimensionally arranged on the insulating layer; and a semiconductor light emitting layer on one surface of a light-transmitting element substrate. A plurality of semiconductor light-emitting elements alternately arranged with a plurality of electrode pads spaced from each other in a direction in which one side of the device substrate extends by bonding the other surface of the element substrate to the insulating layer; For each column formed by the electrode pads and the semiconductor light emitting elements arranged alternately in the direction in which the one side extends, the semiconductor light emitting devices and the electrode pads that form one end of the columns and are adjacent in each column End electrode pads provided on the insulating layer at intervals similar to the intervals between the semiconductor light emitting device; and in each column, the semiconductor light emitting element, the electrode pad adjacent to the element, and the end electrode pad are connected to each other in the column A bonding wire; A column connection bonding wire connecting the end electrode pads adjacent to each other in the direction in which the other side of the device substrate perpendicular to the line extends; the electrode pad, the semiconductor light emitting element, the end electrode pad, the in-column bonding wire; And a light-transmitting sealing member that seals the column connection bonding wires, wherein each of the columns is adjacent to the semiconductor light emitting element, the electrode pad, and the end electrode. The device substrate is arranged in a direction in which the other side of the device substrate extends with a separation distance wider than the space between the pads, and the separation distance between the end electrode pads adjacent in the direction in which the other side extends is It is characterized by setting the same as the interval.

  In the first aspect of the invention, the insulating layer is preferably made of an insulating material, and in order to increase brightness, an insulating layer having excellent light reflection performance, for example, an insulating layer exhibiting white is preferably used. In the first aspect of the present invention, the device substrate can be formed of an insulating material, but can also be formed of a metal such as copper or aluminum alloy so as to function as a heat dissipation member from the semiconductor light emitting element.

  In the first aspect of the invention, “two-dimensionally arranged electrode pads” means that a plurality of electrode pads are arranged in the direction in which one side of the rectangular device substrate extends and the direction in which the other side perpendicular to the one side extends. Refers to being placed. In this case, it is preferable that the plurality of electrode pads are regularly arranged. In the invention of claim 1, "a plurality of electrode pads arranged at intervals" means that a plurality of electrode pads are arranged at equal intervals or at irregular intervals within a manufacturing error range. Yes.

  In the invention of claim 1, the “interval similar to the interval between the semiconductor light emitting element and the electrode pad” naturally includes an aspect in which the interval is the same, but in the manufacturing error range, In other words, an aspect in which the interval is substantially the same is also included. Further, in the first aspect of the invention, “set the separation distance between the end electrode pads in the same manner as the interval” means that the separation distance is set to be the same as the interval between the semiconductor light emitting element and the electrode pad. Naturally, the embodiment includes a mode that is set within substantially the same range when it is within a manufacturing error range.

  In the first aspect of the invention, the light-transmitting sealing member can be made of a light-transmitting synthetic resin such as an epoxy resin, a silicone resin, a urethane resin, or a transparent low-melting glass. . When the lighting device has a reflector, the sealing member can be provided by filling the inside thereof. When the lighting device does not have a reflector, the sealing member can be provided by potting, for example. In the invention of claim 1, the semiconductor light emitting element indicates an SMD (Surface Mount Device) type LED chip. For example, a blue LED chip that emits blue light, an ultraviolet LED chip that emits ultraviolet light, and the like can be suitably used. It is also possible to use a combination of at least two types of LED chips among blue LED chips, red LED chips, and green LED chips. For example, in the case of a lighting device that emits white light using a blue LED chip as a light source, a sealing member mixed with a phosphor that absorbs blue light and emits yellow light may be used. Or a phosphor that absorbs ultraviolet light and emits red light, a phosphor that absorbs ultraviolet light and emits green light, and a phosphor that absorbs ultraviolet light and emits yellow light are mixed. A sealing member may be used.

  According to the first aspect of the present invention, the columns formed by the electrode pads and the semiconductor light emitting elements, and the columns extending in the direction in which one side of the device substrate extends are separated from each other by a distance wider than the distance between the electrode pads and the semiconductor light emitting elements. They are arranged in a direction in which the other side of the device substrate extends at a distance. As a result, the arrangement density of the semiconductor light emitting elements does not become too high, and a light emitting area having a suitable size as a planar light source can be secured.

  Under these conditions, the separation distance between the end electrode pads arranged at the end of the row extending in the direction in which one side of the device substrate extends and arranged in the direction in which the other side of the device substrate extends is determined as follows. The distance between the electrode pads in the row extending in the direction in which one side of the substrate extends and the semiconductor light emitting element is set. Thereby, the length of the in-column bonding wire connecting the electrode pads adjacent to each other in the column and the semiconductor light emitting element, and the column connecting the end electrode pads arranged in the direction in which the other side of the device substrate extends. The length of the connecting bonding wire can be made the same. In this case, “the length is the same” naturally includes an aspect in which the length of the column connection bonding wire and the length of the bonding wire in the column is the same, but in other words, when the length is within the manufacturing error range. For example, the aspect which is substantially the same length is also included.

  Therefore, not only wire bonding at the time of manufacture is facilitated, but also the length of the column connection bonding wire is appropriate as in the column bonding wire, and both ends are bonded to the adjacent end electrode pads by ball bonding. It is possible to suppress stress from remaining in the joint portion of the column connection bonding wire, and to improve the joint reliability. As a result, current is supplied to the semiconductor light-emitting element by the force acting on the joint of the column connection bonding wires embedded in the sealing member in accordance with the thermal expansion and thermal contraction of the sealing member due to turning on and off. It can suppress that the joining in a junction part becomes bad so that it may interrupt.

  According to a second aspect of the present invention, the insulating layer is formed of a white insulating material, and the end electrode pad is connected to the semiconductor light emitting element adjacent thereto, and one end of the in-column bonding wire is bonded to the end electrode pad. The first bonding portion to be formed and the semiconductor light emitting element adjacent to the end electrode pad are provided farther from the first bonding portion and approach to another adjacent end electrode pad. The second connection part to which the other end of the column connection bonding wire is bonded in the direction of the line, and the first and second bonding parts are used to connect the columns adjacent to the end electrode pad. It is characterized by the provision of an L-shaped edge facing it.

  In the second aspect of the invention, examples of the shape of the end electrode pad having the first and second bonding sites include an L-shape and a T-shape.

  In the second aspect of the invention, since the insulating layer is white, it is possible to improve the light extraction efficiency by reflecting the light directed to the insulating layer out of the light emitted from the semiconductor light emitting element by the reflecting layer. By the way, since the separation distance between the adjacent end electrode pads is made the same as the distance between the electrode pad and the semiconductor light emitting element adjacent thereto, the shape of the end electrode pad is changed to the electrode pad and the semiconductor light emitting device. It must be larger than the element. However, the edge electrode pad is provided with first and second joining portions that provide L-shaped edges facing between the columns adjacent to the edge electrode pads, so that the edges are notched. Since the area of the end electrode pad covering the insulating layer is reduced, it is possible to suppress a decrease in light extraction efficiency by the end electrode pad.

  According to the first aspect of the present invention, an illuminating device having improved wire bonding connection reliability between columns formed by electrode pads and semiconductor light emitting elements connected to each other by bonding wires while securing a desired light emitting area. Can provide.

  According to invention of Claim 2, the illuminating device by which the fall of the light extraction efficiency by an edge part electrode pad was suppressed can be provided.

  A first embodiment of the present invention will be described with reference to FIGS.

  Reference numeral 1 in FIGS. 1 and 2 denotes an illumination device that forms an LED package. The lighting device 1 includes a package substrate, for example, a device substrate 2, a plurality of LED chips, preferably a semiconductor light emitting element 11, a plurality of electrode pads 5, a plurality of end electrode pads 7, a plurality of power supply pads 9, an in-row bonding wire 17, and a row. The connecting bonding wire 19, the reflector 25, the sealing member 28, etc. are provided.

  The device substrate 2 has a quadrangular shape, for example, a rectangular shape, with a size that can secure a light emitting area required for the lighting device 1. The device substrate 2 is made of a flat plate made of metal or an insulating material such as synthetic resin. As shown in FIG. 2, the device substrate 2 has an insulating layer 3 deposited on one surface thereof. The insulating layer 3 has light reflection performance. For this purpose, for example, an insulating layer 3 made of a white insulating material is used which is impregnated into a thermosetting resin sheet base material mixed with white powder such as aluminum oxide.

  Each semiconductor light emitting element 11 is made of, for example, a blue LED chip. This LED chip is a double wire type using, for example, a nitride semiconductor, and is formed by laminating a semiconductor light emitting layer 13 on one surface of a light-transmitting element substrate 12 as shown in FIGS. ing. The element substrate 12 is made of, for example, a sapphire substrate. The semiconductor light emitting layer 13 is formed by sequentially stacking a buffer layer, an n-type semiconductor layer, a light emitting layer, a p-type cladding layer, and a p-type semiconductor layer on the back surface of the element substrate 12. The light emitting layer has a quantum well structure in which barrier layers and well layers are alternately stacked. An n-side electrode 14 is provided on the n-type semiconductor layer, and a p-side electrode 15 is provided on the p-type semiconductor layer. The semiconductor light emitting layer 13 does not have a reflective film, and can emit light in both the thickness direction of the semiconductor light emitting element 11 and can also emit light from the side surface of the element substrate 12 to the side.

  These semiconductor light emitting elements 11 are two-dimensionally arranged by bonding the other surface parallel to the one surface of the element substrate 12 to the surface of the insulating layer 3 using a translucent adhesive such as a transparent silicone resin adhesive 16. Has been. With this two-dimensional arrangement, the semiconductor light emitting elements 11 are arranged at a constant arrangement pitch A in the direction in which the one side 2a of the device substrate 2 extends, and, for example, a plurality of columns parallel to the one side 2a of the device substrate 2, for example two In addition to forming an element array, two or more element arrays parallel to the other sides 2b and 2c of the device substrate 2 perpendicular to the one side 2a are formed and arranged.

  In other words, the plurality of semiconductor light emitting elements 11 are regularly arranged in the vertical and horizontal directions of the device substrate 2, and the two element rows extending in the direction in which one side 2 a of the device substrate 2 extends are formed on the device substrate 2. The other sides 2b and 2c are arranged in the extending direction. The separation distance B between these two element rows is preferably the same as the arrangement pitch A of the semiconductor light emitting elements 11 in each element row, and is adjacent to the semiconductor light emitting elements 11 in each element row. The distance C between the electrode pad 5 and the electrode pad 5 is set wider. Setting the interval C to 1.5 mm to 2.0 mm is preferable in securing the reliability of bonding of bonding wires (described later) provided by ball bonding.

  As shown in FIGS. 1A and 4, the electrode pads 5 are two-dimensionally arranged by bonding to the surface of the insulating layer 3. Each electrode pad 5 is thinner than the semiconductor light emitting layer. Due to the two-dimensional arrangement, the electrode pads 5 are arranged at a constant arrangement pitch D in the direction in which the one side 2a of the device substrate 2 extends, for example, a plurality of rows, for example, two pads, parallel to the one side 2a of the device substrate 2 A row is formed and two or more pad rows parallel to the other sides 2b and 2c of the device substrate 2 perpendicular to the one side 2a are formed and arranged. In other words, the plurality of electrode pads 5 are also regularly arranged in the vertical and horizontal directions of the device substrate 2, and the two pad rows extending in the direction in which one side 2 a of the device substrate 2 extends are the other of the device substrate 2. The sides 2b and 2c are arranged in the extending direction.

  The plurality of electrode pads 5 forming one pad row closest to the one side 2a of the device substrate 2 and the plurality of semiconductor light emitting elements 11 forming the element row closest to the one side 2a of the device substrate 2 are divided into two sides 2a. Are alternately arranged in the extending direction. Similarly, a plurality of electrode pads 5 forming the other pad row closest to the other side 2d parallel to the one side 2a of the device substrate 2 and a plurality of element rows forming the element row closest to the one side 2d of the device substrate 2 are also provided. The semiconductor light emitting elements 11 are alternately arranged in the direction in which the side 2d extends.

  Each electrode pad 5 has a substantially square shape, and the length of each side thereof is set to 1 to 2 times the element size of the semiconductor light emitting element 11. As a result, it is possible to absorb variations in the lengths of the bonding wires in the row, which will be described later, and to make the bonding machine recognize the straight edges of the electrode pads 5 and to easily determine the positioning reference in wire bonding. I am doing so. The arrangement pitch D of the electrode pads 5 in each pad row is set similarly to the arrangement pitch A. The separation distance E between these two pad rows is set wider than the distance C between the electrode pad 5 and the semiconductor light emitting element 11 adjacent thereto in each pad row.

  An end electrode pad 7 is disposed on the surface of the insulating layer 3 so as to form one end of each of the two pad rows. The thickness of these end electrode pads 7 is the same as that of the electrode pads 5 and is smaller than the thickness of the semiconductor light emitting layer 13. Further, as shown in FIG. 1B, the end electrode pad 7 has a first joint portion 7a and a second joint portion 7b, and has, for example, a T shape.

  An L-shaped edge portion 7c is provided to the end electrode pad 7 by the first bonding portion 7a and the second bonding portion 7b perpendicular to the first bonding portion 7a. Thereby, the region Y indicated by the parallel oblique lines of the two-dot chain line in FIG. 1B of the insulating layer 3 is not covered with the end electrode pads 7. The pair of end electrode pads 7 project the second bonding portion 7b in the direction in which the other sides 2b and 2c of the device substrate 2 extend and face each other, and the first bonding portion 7a is disposed on the device substrate 2. It is provided in parallel with one side 2a. Therefore, the second bonding portion 7 b is farther from the first bonding portion 7 a with respect to the semiconductor light emitting element 11 adjacent to the end electrode pad 7.

  In each pad row, the first bonding portion 7a of the end electrode pad 7 faces the electrode pad 5 adjacent thereto, and the distance F between the first bonding portion 7a and the electrode pad 5 is as follows. It is set equal to the interval C. At the same time, the separation distance G between the pair of end electrode pads 7 between the second bonding portions 7b facing each other is set equal to the distance C.

  On the surface of the insulating layer 3, the power supply pad 9 is arranged with the other end for each of the two pad rows. Each power supply pad 9 has the same thickness as the electrode pad 5 and is thinner than the semiconductor light emitting layer 13. The distance H between the power supply pad 9 and the electrode pad 5 adjacent to the power supply pad 9 is set to be equal to the distance C. Electric wires (not shown) reaching the power source are connected to each of the pair of power supply pads 9 by soldering or the like.

  Each of the electrode pads 5, the end electrode pads 7, and the power supply pad 9 is formed on the polished surface after, for example, etching a copper layer laminated on the device substrate 2 and electropolishing the remaining copper. An Au or Ni cover layer is formed by, for example, plating.

  Then, the semiconductor light emitting elements 11, the electrode pads 5, the one end electrode pad 7, and the one arranged in a row (this row is shown in FIG. 1 as a row L1 for convenience) at a position closest to the one side 2a of the device substrate 2. The power supply pads 9 are connected to each other by bonding wires 17 (referred to as in-row bonding wires in this specification for easy identification). Similarly, the semiconductor light-emitting elements 11, the electrode pads 5, and the other arranged in a row (this row is shown in FIG. 1 as a row L 2 for convenience) at a position closest to the other side 2 d of the device substrate 2 parallel to the side 2 a. The end electrode pad 7 and the other power supply pad 9 are also connected by a bonding wire 17 (referred to as an in-column bonding wire in this specification for easy identification). In connection between the end electrode pad 7 and the semiconductor light emitting element 11 adjacent thereto, one end of the in-column bonding wire 17 is bonded to the first bonding site 7 a of the end electrode pad 7. The other end is bonded to the semiconductor light emitting element 11 adjacent to the end electrode pad 7.

  In the two rows L1 and L2, the end electrode pads 7 adjacent to each other at the position closest to the other side 2b of the device substrate 2 are bonded to each other with bonding wires (in this specification, column connection bonding wires are used for easy identification). Connected by 19). Therefore, in this embodiment, both the rows L1 and L2 are electrically connected in series. In this case, both ends of the column connection bonding wire 19 are bonded to the second bonding site 7 b of the end electrode pad 7.

  The in-row bonding wires 17 and the row connecting bonding wires 19 are made of Au or Al conductive wires, and have a diameter of 16 μm to 60 μm, preferably 20 μm to 30 μm.

  The planar shape of the lighting device 1 is determined by the device substrate 2 with the insulating layer 3, each electrode pad 5, each end electrode pad 7, each power supply pad 9, each in-row bonding wire 17, and in-column bonding wire 19. A light source is formed.

  The reflector 25 is not individually provided for each one or several semiconductor light emitting elements 11, but is a single one that surrounds all the semiconductor light emitting elements 11 on the insulating layer 3, and has a frame, for example, FIG. As shown in FIG. 2, it is formed of a rectangular frame. The reflector 25 is bonded to the insulating layer 3. A part of the power supply pad 9 is located outside the reflector 25 to connect the electric wire. The inner peripheral surface of the reflector 25 is a light reflecting surface. For this purpose, for example, white powder such as aluminum oxide is mixed in a synthetic resin which is a molding material of the reflector 25.

  The sealing member 28 is injected into the reflector 25 and solidified, and fills most of the portion located in the reflector 25 of the planar light source. The sealing member 28 is made of a translucent material such as a transparent silicone resin, and a phosphor is mixed therein as necessary. In the present embodiment, since the semiconductor light emitting element 11 emits blue light, phosphors (not shown) that absorb this light and emit yellow light are preferably mixed in a substantially uniformly dispersed state. With this combination, when the lighting device 1 is turned on, a part of the blue light emitted from the semiconductor light emitting layer 13 passes through the sealing member 28 without hitting the phosphor. Since the yellow light is absorbed and the yellow light passes through the sealing member 28, the white light of the lighting device 1 can be irradiated by the mixture of these two complementary colors.

  In the illuminating device 1 having the above-described configuration, the light emitted from the semiconductor light emitting layer 13 of each semiconductor light emitting element 11 toward the insulating layer 3 passes through the adhesive 16 in the opposite direction to the light extraction direction indicated by the arrow in FIG. Then, the light is reflected by the insulating layer 3 in the light extraction direction. At the same time, the blue light and yellow light reaching the surface of the insulating layer 3 spreading around the semiconductor light emitting element 11 are reflected in the extraction direction. Therefore, the light extraction efficiency is good. In addition, since most of the light passes through the sealing member 28 without being reflected by the reflector 25, there is no loss of light due to reflection, and the light extraction efficiency is good in this respect.

  In the illumination device 1 having the above-described configuration, the two rows L1 and L2 including the electrode pads 5 and the semiconductor light emitting elements 11 arranged alternately and extending in the direction in which the one side 2a of the device substrate 2 extends include The other sides 2b and 2c of the device substrate 2 are arranged in the extending direction with a distance E wider than the interval C between the electrode pads 5 adjacent to each other and the semiconductor light emitting element 11 in the extending direction of the column. For this reason, the arrangement density of the plurality of semiconductor light emitting elements 11 arranged on the device substrate 2 having a predetermined area is not excessively increased, and a light emitting area having an appropriate size as a planar light source can be secured.

  Under these conditions, they are arranged at the ends of the rows L1 and L2 extending in the direction in which the one side 2a of the device substrate 2 extends, and are arranged in the direction in which the other sides 2b and 2c of the device substrate 2 extend. The distance G between the end electrode pads 7 is the same as the distance C between the electrode pads 5 in the rows L1 and L2 extending in the direction in which the one side 2a of the device substrate 2 extends and the semiconductor light emitting element 11. Is set. Therefore, the lengths of the in-column bonding wires 17 connecting the electrode pads 5 adjacent to each other in the rows L1 and L2 and the semiconductor light emitting element 11 and the other sides 2b and 2c of the device substrate 2 are arranged in the extending direction. The lengths of the column connection bonding wires 19 connecting the end electrode pads 7 can be made the same.

  Thereby, the wire bonding at the time of manufacture of the illuminating device 1 becomes easy. In addition, since the length of the column connection bonding wire 19 is adjusted to an appropriate length of 1.5 mm to 2.0 mm as in the case of the in-column bonding wire 17, stress is applied to the joint portion of the column connection bonding wire 19. Residuality is suppressed, and the reliability of bonding is enhanced. Therefore, it acts on the joint portion of the column connection bonding wire 19 embedded in the sealing member 28 with respect to the end electrode pad 7 according to the thermal expansion and thermal contraction of the sealing member 28 associated with the lighting device 1 being turned on and off. It is possible to suppress the bonding at the bonding portion from becoming defective so that the current supply to the semiconductor light emitting element 11 is interrupted by the force to be applied.

  In addition, the end electrode pad 7 is directed to the semiconductor light emitting element 11 adjacent to the end electrode pad 7, the first bonding portion 7 a where one end of the in-column bonding wire 17 is bonded, and the semiconductor light emission adjacent to the end electrode pad 7. A second member is provided to be separated from the first bonding part 7a with respect to the element 11 and is connected to the other end electrode pad 7 so that the other end of the column connection bonding wire 19 is bonded. It has the joint part 7b.

  Therefore, as described above, the separation distance G between the adjacent end electrode pads 7 is made the same as the distance C between the electrode pad 5 and the semiconductor light emitting element 11 adjacent thereto, and therefore, the end electrode The shape of the pad 7 must be larger than that of the electrode pad 5 having a size one to two times that of the semiconductor light emitting element 11. However, the end electrode pad 7 is provided with a first bonding portion 7a and a second bonding portion 7b that provide an L-shaped edge portion 7c facing between the rows L1 and L2 adjacent to the end electrode pad 7. Therefore, the edge portion 7c becomes a notch and the area where the end electrode pad 7 covers the insulating layer 3 is reduced. Therefore, in this respect, it is possible to suppress a decrease in light extraction efficiency by the end electrode pad 7, and to increase the light extraction efficiency accordingly. In addition, since the edge electrode pad 7 is provided with an L-shaped edge 7 c to reduce the shape (area) of the end electrode pad 7, the use of metal necessary to configure the end electrode pad 7 is used. The amount is reduced and the cost can be reduced.

  5 and 6 show a second embodiment of the present invention. Since this embodiment is the same as the first embodiment except for the following description, the same parts as those in the first embodiment are denoted by the same reference numerals and the description thereof is omitted.

  In the second embodiment, three rows including alternately arranged semiconductor light emitting elements 11 and electrode pads 5 are provided. The end electrode pad 7 located at one end of the rows L1 and L2 provided on both sides of the middle row L3 has an L-shape having a first joint portion 7a and a second joint portion 7b. Has been. The end electrode pad 8 positioned at one end of the middle row L3 has a first bonding portion 8a at the center, and a pair of second bonding portions facing in a direction perpendicular to the first bonding portion 8a. 8b and has a T-shape. The first bonding portion 8a and the second bonding portion 8b continuous at right angles thereto provide the end electrode pad 8 with an L-shaped side edge 8c.

  The first bonding portion 8a is directed to the semiconductor light emitting element 11 adjacent to the end electrode pad 8 at one end portion of the middle row L3, and is connected to the semiconductor light emitting device 11 using an in-row bonding wire 17. The pair of second bonding sites 8b are connected to the second bonding sites 7b of the end electrode pads 7 of the columns L1 and L2 provided on both sides of the middle column L3 using the column connection bonding wires 19. Yes. The distance G between the second bonding portion 7b of the end electrode pad 7 and the second bonding portion 8b of the end electrode pad 8 adjacent thereto is equal to the electrode pad adjacent in each of the rows L1 to L3. This is equivalent to the distance C between 5 and the semiconductor light emitting device. With such connection, in FIG. 5, the middle row L3 and the upper row L1 are electrically connected in series, while the middle row L3 and the lower row L2 are electrically connected in parallel. . In addition, the power supply pad 9 located at the other end of the middle row L3 and the lower row L2 is integrated into one.

  Items other than the points described above are the same as those in the first embodiment, including items not shown. Therefore, the lighting device 1 of the second embodiment can solve the problems of the present invention by obtaining the same operation as that of the first embodiment.

  In addition, since two or more rows, specifically three rows, including the alternately arranged semiconductor light emitting elements 11 and electrode pads 5 are provided, the lighting device 1 having a wider light emitting area can be obtained. In addition, the end electrode pad 7 has an L shape, and the area is the smallest compared to the T shape and the + shape. In addition, since the end electrode pad 8 is formed by combining two L-shapes, this area is small. Therefore, the amount of metal used to configure these end electrode pads is further reduced, and the cost can be reduced.

FIG. 2A is a plan view showing a lighting device according to the first embodiment of the present invention with a part cut away. FIG. 2B is an enlarged plan view showing a part of FIG. Sectional drawing which follows the F2-F2 line | wire in FIG. Sectional drawing which expands and shows a part of FIG. The top view which shows the apparatus board | substrate with which the illuminating device of FIG. 1 is provided in the state by which various pads were provided in it. The top view which cuts and shows the illuminating device which concerns on 2nd Embodiment of this invention partially. The top view which expands and shows a part of FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Lighting fixture, 2 ... Device substrate, 2a ... One side of device substrate, 2b, 2c ... Other side of device substrate, 5 ... Electrode pad, 7, 8 ... End electrode pad, 7a, 8a ... 1st junction site , 7b, 8b... 2nd bonding site, 7c, 8c .. side edge, 11... Semiconductor light emitting element, 12... Element substrate, 13. ... spacing between columns, C ... spacing between adjacent electrode pads and semiconductor light emitting elements, F ... spacing between end electrode pads and adjacent semiconductor light emitting elements, G ... adjacent end electrodes Separation distance between second joint portions of pads, L1 to L3...

Claims (2)

A rectangular device substrate with an insulating layer deposited thereon;
A plurality of electrode pads two-dimensionally arranged on the insulating layer;
A plurality of electrode pads having a semiconductor light-emitting layer on one surface of a light-transmitting element substrate, the other surface of the element substrate being bonded to the insulating layer, and spaced apart in a direction in which one side of the device substrate extends A plurality of semiconductor light emitting elements alternately arranged;
For each column formed by the electrode pads and the semiconductor light emitting elements alternately arranged in the direction in which the one side extends, the semiconductor light emitting devices and the electrode pads that form one end of the columns and are adjacent in each column End electrode pads provided on the insulating layer at intervals similar to the intervals between
In each row, the semiconductor light emitting element and an in-column bonding wire connecting an electrode pad and an end electrode pad adjacent to the element;
A column connection bonding wire connecting the end electrode pads adjacent to each other in a direction in which the other side of the device substrate perpendicular to the one side extends;
A translucent sealing member that seals the electrode pad, the semiconductor light emitting element, the end electrode pad, the in-column bonding wire, and the column connection bonding wire;
A lighting device comprising:
Each of the columns is arranged in a direction in which the other side of the device substrate extends with a separation distance wider than the interval between the semiconductor light emitting elements adjacent to each other in the columns and the electrode pads and the end electrode pads. And the distance between the end electrode pads adjacent to each other in the direction in which the other side extends is set in the same manner as the distance. The insulating layer is formed of a white insulating material;
The end electrode pad is directed to the semiconductor light emitting element adjacent to the end electrode pad, the first bonding portion where one end of the in-column bonding wire is bonded, and the semiconductor light emitting element adjacent to the end electrode pad. And a second bonding portion that is provided away from the first bonding portion and that is connected to the other end electrode pad adjacent to the other end electrode pad. Have
The lighting device according to claim 1, wherein an L-shaped edge facing the rows adjacent to the end electrode pad is provided by the first and second bonding portions.

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