JP2008039961A - Positive photosensitive resin composition and organic electroluminescence device using the same - Google Patents
Positive photosensitive resin composition and organic electroluminescence device using the same Download PDFInfo
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- JP2008039961A JP2008039961A JP2006211734A JP2006211734A JP2008039961A JP 2008039961 A JP2008039961 A JP 2008039961A JP 2006211734 A JP2006211734 A JP 2006211734A JP 2006211734 A JP2006211734 A JP 2006211734A JP 2008039961 A JP2008039961 A JP 2008039961A
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- 239000011342 resin composition Substances 0.000 title claims abstract description 46
- 238000005401 electroluminescence Methods 0.000 title claims description 3
- -1 quinonediazide compound Chemical class 0.000 claims abstract description 110
- 229920005989 resin Polymers 0.000 claims abstract description 44
- 239000011347 resin Substances 0.000 claims abstract description 44
- 150000001875 compounds Chemical class 0.000 claims abstract description 40
- 238000010521 absorption reaction Methods 0.000 claims abstract description 32
- SIKJAQJRHWYJAI-UHFFFAOYSA-N benzopyrrole Natural products C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000002904 solvent Substances 0.000 claims abstract description 9
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 claims abstract description 8
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 claims abstract description 8
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 claims abstract description 7
- CWRYPZZKDGJXCA-UHFFFAOYSA-N acenaphthalene Natural products C1=CC(CC2)=C3C2=CC=CC3=C1 CWRYPZZKDGJXCA-UHFFFAOYSA-N 0.000 claims abstract description 6
- HXGDTGSAIMULJN-UHFFFAOYSA-N acetnaphthylene Natural products C1=CC(C=C2)=C3C2=CC=CC3=C1 HXGDTGSAIMULJN-UHFFFAOYSA-N 0.000 claims abstract description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 34
- 229910052757 nitrogen Inorganic materials 0.000 claims description 20
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 19
- 150000002430 hydrocarbons Chemical group 0.000 claims description 17
- 125000000962 organic group Chemical group 0.000 claims description 13
- 125000003118 aryl group Chemical group 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 43
- 238000010438 heat treatment Methods 0.000 abstract description 31
- 238000011161 development Methods 0.000 abstract description 16
- 229920001721 polyimide Polymers 0.000 abstract description 14
- 239000004642 Polyimide Substances 0.000 abstract description 12
- 239000002243 precursor Substances 0.000 abstract description 10
- 229920002577 polybenzoxazole Polymers 0.000 abstract description 9
- 229920006015 heat resistant resin Polymers 0.000 abstract description 3
- 238000006798 ring closing metathesis reaction Methods 0.000 abstract description 3
- 125000003277 amino group Chemical group 0.000 abstract 1
- 239000010408 film Substances 0.000 description 56
- 230000015572 biosynthetic process Effects 0.000 description 50
- 238000003786 synthesis reaction Methods 0.000 description 50
- 239000002966 varnish Substances 0.000 description 45
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 40
- 238000011156 evaluation Methods 0.000 description 33
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 32
- 238000005259 measurement Methods 0.000 description 31
- 239000000758 substrate Substances 0.000 description 31
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 30
- 229920000642 polymer Polymers 0.000 description 30
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- 239000000243 solution Substances 0.000 description 24
- 238000006243 chemical reaction Methods 0.000 description 21
- 238000012360 testing method Methods 0.000 description 21
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 18
- 150000004985 diamines Chemical class 0.000 description 18
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 18
- 239000010410 layer Substances 0.000 description 18
- 239000000126 substance Substances 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 15
- 150000002148 esters Chemical class 0.000 description 15
- 229940116333 ethyl lactate Drugs 0.000 description 15
- 238000001914 filtration Methods 0.000 description 15
- 239000011521 glass Substances 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 239000000203 mixture Substances 0.000 description 13
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 12
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 12
- 229920005575 poly(amic acid) Polymers 0.000 description 12
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 11
- 150000008065 acid anhydrides Chemical class 0.000 description 11
- 239000002244 precipitate Substances 0.000 description 11
- 239000007787 solid Substances 0.000 description 11
- 239000002253 acid Substances 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 8
- MSTZGVRUOMBULC-UHFFFAOYSA-N 2-amino-4-[2-(3-amino-4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenol Chemical compound C1=C(O)C(N)=CC(C(C=2C=C(N)C(O)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MSTZGVRUOMBULC-UHFFFAOYSA-N 0.000 description 8
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- WDJHNJSBPXRITJ-UHFFFAOYSA-N n-(9,10-dioxoanthracen-1-yl)acetamide Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2NC(=O)C WDJHNJSBPXRITJ-UHFFFAOYSA-N 0.000 description 8
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical group [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 7
- 150000001805 chlorine compounds Chemical class 0.000 description 7
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 7
- 229910052753 mercury Inorganic materials 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 6
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 6
- CUARLQDWYSRQDF-UHFFFAOYSA-N 5-Nitroacenaphthene Chemical compound C1CC2=CC=CC3=C2C1=CC=C3[N+](=O)[O-] CUARLQDWYSRQDF-UHFFFAOYSA-N 0.000 description 6
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 6
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 239000002585 base Substances 0.000 description 6
- 239000011324 bead Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 150000001991 dicarboxylic acids Chemical class 0.000 description 6
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 6
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000003513 alkali Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- CQGDBBBZCJYDRY-UHFFFAOYSA-N 1-methoxyanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2OC CQGDBBBZCJYDRY-UHFFFAOYSA-N 0.000 description 4
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 4
- APLQXUAECQNQFE-UHFFFAOYSA-N 2-methoxyanthracene-9,10-dione Chemical compound C1=CC=C2C(=O)C3=CC(OC)=CC=C3C(=O)C2=C1 APLQXUAECQNQFE-UHFFFAOYSA-N 0.000 description 4
- IJFXRHURBJZNAO-UHFFFAOYSA-N 3-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC(O)=C1 IJFXRHURBJZNAO-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 4
- 239000004693 Polybenzimidazole Substances 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- RWZYAGGXGHYGMB-UHFFFAOYSA-N anthranilic acid Chemical compound NC1=CC=CC=C1C(O)=O RWZYAGGXGHYGMB-UHFFFAOYSA-N 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 4
- 229920002480 polybenzimidazole Polymers 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 3
- GCDBEYOJCZLKMC-UHFFFAOYSA-N 2-hydroxyanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(O)=CC=C3C(=O)C2=C1 GCDBEYOJCZLKMC-UHFFFAOYSA-N 0.000 description 3
- CWLKGDAVCFYWJK-UHFFFAOYSA-N 3-aminophenol Chemical compound NC1=CC=CC(O)=C1 CWLKGDAVCFYWJK-UHFFFAOYSA-N 0.000 description 3
- 229940018563 3-aminophenol Drugs 0.000 description 3
- ODPLCKKBVAJQEP-UHFFFAOYSA-N 4-(2-benzo[e][1,3]benzothiazol-2-ylethenyl)-n,n-dimethylaniline Chemical compound C1=CC(N(C)C)=CC=C1C=CC(S1)=NC2=C1C=CC1=CC=CC=C21 ODPLCKKBVAJQEP-UHFFFAOYSA-N 0.000 description 3
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 3
- DQOPDYYQICTYEY-FMIVXFBMSA-N 4-[(e)-2-(1,3-benzoxazol-2-yl)ethenyl]-n,n-dimethylaniline Chemical compound C1=CC(N(C)C)=CC=C1\C=C\C1=NC2=CC=CC=C2O1 DQOPDYYQICTYEY-FMIVXFBMSA-N 0.000 description 3
- PAFZNILMFXTMIY-UHFFFAOYSA-N Cyclohexylamine Natural products NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- ZSXGLVDWWRXATF-UHFFFAOYSA-N N,N-dimethylformamide dimethyl acetal Chemical compound COC(OC)N(C)C ZSXGLVDWWRXATF-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 3
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 230000018044 dehydration Effects 0.000 description 3
- 238000006297 dehydration reaction Methods 0.000 description 3
- 238000007607 die coating method Methods 0.000 description 3
- 238000007865 diluting Methods 0.000 description 3
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 3
- 125000004185 ester group Chemical group 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 125000003709 fluoroalkyl group Chemical group 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 3
- 150000003628 tricarboxylic acids Chemical class 0.000 description 3
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- BWRBVBFLFQKBPT-UHFFFAOYSA-N (2-nitrophenyl)methanol Chemical compound OCC1=CC=CC=C1[N+]([O-])=O BWRBVBFLFQKBPT-UHFFFAOYSA-N 0.000 description 2
- KNDQHSIWLOJIGP-UMRXKNAASA-N (3ar,4s,7r,7as)-rel-3a,4,7,7a-tetrahydro-4,7-methanoisobenzofuran-1,3-dione Chemical compound O=C1OC(=O)[C@@H]2[C@H]1[C@]1([H])C=C[C@@]2([H])C1 KNDQHSIWLOJIGP-UMRXKNAASA-N 0.000 description 2
- BUVPIPXDBJMXEK-RMKNXTFCSA-N 1,3-dimethyl-5-[(2e)-2-(1-methylpyrrolidin-2-ylidene)ethylidene]-1,3-diazinane-2,4,6-trione Chemical compound CN1CCC\C1=C/C=C1C(=O)N(C)C(=O)N(C)C1=O BUVPIPXDBJMXEK-RMKNXTFCSA-N 0.000 description 2
- JZEGWOILOCWEHS-UHFFFAOYSA-N 1,3-dimethyl-5-[2-(3-methyl-1,3-oxazolidin-2-ylidene)ethylidene]-1,3-diazinane-2,4,6-trione Chemical compound CN1CCOC1=CC=C1C(=O)N(C)C(=O)N(C)C1=O JZEGWOILOCWEHS-UHFFFAOYSA-N 0.000 description 2
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 2
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 2
- IYNJGYCVIYBFBS-UHFFFAOYSA-N 1,5-dihydroxy-3-methylanthracene-9,10-dione Chemical compound C1=CC(O)=C2C(=O)C3=CC(C)=CC(O)=C3C(=O)C2=C1 IYNJGYCVIYBFBS-UHFFFAOYSA-N 0.000 description 2
- VQUUDWPESXALSD-UHFFFAOYSA-N 1,7-dihydroxy-3-methyl-9,10-anthraquinone Natural products OC1=CC=C2C(=O)C3=CC(C)=CC(O)=C3C(=O)C2=C1 VQUUDWPESXALSD-UHFFFAOYSA-N 0.000 description 2
- OGURMTXRUQGVMS-UHFFFAOYSA-N 1,8-dihydroxy-2-methylanthracene-9,10-dione Chemical compound C1=CC(O)=C2C(=O)C3=C(O)C(C)=CC=C3C(=O)C2=C1 OGURMTXRUQGVMS-UHFFFAOYSA-N 0.000 description 2
- QCSZITHNACKGTF-UHFFFAOYSA-N 1,8-dimethoxyanthracene-9,10-dione Chemical compound O=C1C2=CC=CC(OC)=C2C(=O)C2=C1C=CC=C2OC QCSZITHNACKGTF-UHFFFAOYSA-N 0.000 description 2
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 description 2
- BTLXPCBPYBNQNR-UHFFFAOYSA-N 1-hydroxyanthraquinone Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2O BTLXPCBPYBNQNR-UHFFFAOYSA-N 0.000 description 2
- SONQUBLFXUMJKL-UHFFFAOYSA-N 2,3-diaminobenzenethiol Chemical compound NC1=CC=CC(S)=C1N SONQUBLFXUMJKL-UHFFFAOYSA-N 0.000 description 2
- VLZVIIYRNMWPSN-UHFFFAOYSA-N 2-Amino-4-nitrophenol Chemical compound NC1=CC([N+]([O-])=O)=CC=C1O VLZVIIYRNMWPSN-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- VRVRGVPWCUEOGV-UHFFFAOYSA-N 2-aminothiophenol Chemical compound NC1=CC=CC=C1S VRVRGVPWCUEOGV-UHFFFAOYSA-N 0.000 description 2
- HHCHLHOEAKKCAB-UHFFFAOYSA-N 2-oxaspiro[3.5]nonane-1,3-dione Chemical compound O=C1OC(=O)C11CCCCC1 HHCHLHOEAKKCAB-UHFFFAOYSA-N 0.000 description 2
- AJHPGXZOIAYYDW-UHFFFAOYSA-N 3-(2-cyanophenyl)-2-[(2-methylpropan-2-yl)oxycarbonylamino]propanoic acid Chemical compound CC(C)(C)OC(=O)NC(C(O)=O)CC1=CC=CC=C1C#N AJHPGXZOIAYYDW-UHFFFAOYSA-N 0.000 description 2
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Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Polyamides (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
Description
本発明は、ポジ型感光性樹脂組成物に関する。さらに詳しくは、半導体素子の表面保護膜、層間絶縁膜、有機エレクトロルミネッセンス(以下有機ELと記す)素子の絶縁層や薄膜トランジスタ(Thin Film Transistor:以下TFTと記す)基板の平坦化膜、回路基板の配線保護絶縁膜、固体撮像素子のオンチップマイクロレンズや各種ディスプレイ・固体撮像素子用平坦化膜、回路基板用のソルダーレジストなどの用途に適した樹脂組成物に関する。 The present invention relates to a positive photosensitive resin composition. More specifically, the surface protective film of the semiconductor element, the interlayer insulating film, the insulating layer of the organic electroluminescence (hereinafter referred to as organic EL) element, the planarization film of the thin film transistor (hereinafter referred to as TFT) substrate, the circuit board The present invention relates to a resin composition suitable for uses such as a wiring protective insulating film, an on-chip microlens for a solid-state imaging device, a flattening film for various displays and solid-state imaging devices, and a solder resist for a circuit board.
従来の一般的な有機EL素子の絶縁層としては、低分子型発光素子の場合は厚さ1μm程度、高分子型発光素子の場合は厚さ2〜4μmの樹脂膜が用いられてきた。このような樹脂膜を形成する材料として、パターン加工後に熱処理を行うことで永久膜として使用できる、感光性ポリイミドや感光性ポリベンゾオキサゾールなどのポジ型の感光性樹脂組成物が、好適に用いられてきた。 As an insulating layer of a conventional general organic EL element, a resin film having a thickness of about 1 μm in the case of a low molecular light emitting element and a thickness of 2 to 4 μm in the case of a polymer light emitting element has been used. As a material for forming such a resin film, a positive photosensitive resin composition such as photosensitive polyimide or photosensitive polybenzoxazole, which can be used as a permanent film by performing a heat treatment after pattern processing, is preferably used. I came.
一方、次世代フラットパネルディスプレイとして注目されている有機ELディスプレイは、液晶ディスプレイよりも薄膜化が容易であり、将来電子ペーパーなどのフレキシブル基板への応用が期待されていることから、厚さ0.5μm以下の絶縁層が求められるようになってきている。 On the other hand, organic EL displays, which are attracting attention as next-generation flat panel displays, can be made thinner than liquid crystal displays and are expected to be applied to flexible substrates such as electronic paper in the future. An insulating layer of 5 μm or less has been demanded.
ところが、厚さ0.5μm以下のポジ型感光性樹脂組成物からなる樹脂膜を露光した場合、基板からの反射光により樹脂膜が過度に露光されたり、基板表面の凹凸でハレーションを起こしたりするため、現像時に未露光部のパターンが基板から剥がれるという課題があった。これまでに、ハレーションを防止し、寸法安定性に優れたパターンを形成する樹脂組成物として、レジストに油性染料及びアルカリ可溶性染料を含有するポジ型感光性樹脂組成物が提案されている(例えば、特許文献1〜2参照)。しかし、この感光性樹脂組成物から得られる樹脂膜は、熱処理後、基板との接着性が低い点が課題であった。また、縁破壊電圧が低いため有機EL素子の絶縁層に用いることはできなかった。一方、耐光性を向上させた樹脂組成物として、ポリイミド、ポリベンゾオキサゾールおよびそれら前駆体に紫外線吸収剤やラジカルトラップ剤などの光安定化剤を含有する樹脂組成物が提案されている(例えば、特許文献3参照)。しかしながら、これらの方法を用いても、厚さ0.5μm以下の薄膜におけるパターン剥がれの防止効果は不十分であった。さらに、遮光性を有する樹脂組成物として、有機EL素子のブラックマトリックスなどに用いられるような、顔料を含有するポジ型感光性樹脂組成物が提案されている(例えば、特許文献4〜6参照)。しかし、現像時に顔料粒子が樹脂組成物と基板との接着性を低下させる課題があった。
上記のとおり、従来公知の方法では、近年求められる0.5μm以下の厚さにおいて十分な接着性を有する感光性樹脂組成物を得ることができなかった。本発明は上記課題に鑑み、熱処理後の膜厚が0.5μm以下であっても、現像時および熱処理後に良好な接着性を有し、かつ熱処理後に良好な絶縁破壊電圧を有する樹脂膜を形成することができるポジ型感光性樹脂組成物を提供することを目的とする。 As described above, a conventionally known method could not obtain a photosensitive resin composition having sufficient adhesion at a thickness of 0.5 μm or less that has recently been required. In view of the above problems, the present invention forms a resin film having good adhesion during development and after heat treatment and having good dielectric breakdown voltage after heat treatment even if the film thickness after heat treatment is 0.5 μm or less. An object of the present invention is to provide a positive photosensitive resin composition that can be used.
(a)一般式(1)で表される構造単位および/または一般式(2)で表される構造単位を有する樹脂、(b)キノンジアジド化合物、(c)アントラキノン化合物、アセナフテン化合物、インドール化合物、メロシアニン化合物および下記一般式(3)で表されるスチリル化合物からなる群から選ばれる化合物であって、波長350nm以上450nm未満に吸収極大波長をもち、かつ波長450nm以上700nm以下に吸収極大波長をもたない化合物および(d)溶剤を含有することを特徴とするポジ型感光性樹脂組成物。 (A) a resin having a structural unit represented by the general formula (1) and / or a structural unit represented by the general formula (2), (b) a quinonediazide compound, (c) an anthraquinone compound, an acenaphthene compound, an indole compound, A compound selected from the group consisting of a merocyanine compound and a styryl compound represented by the following general formula (3), having an absorption maximum wavelength at a wavelength of 350 nm or more and less than 450 nm, and an absorption maximum wavelength at a wavelength of 450 nm or more and 700 nm or less A positive photosensitive resin composition, comprising: a non-reactive compound; and (d) a solvent.
(一般式(1)中、R1およびR2は炭素数2〜30の2〜6価の有機基を示す。各Aは同じでも異なっていてもよく、OR3、SO3R3、CONR3R4、COOR3、SO2NR3R4から選ばれる。R3およびR4は水素原子または炭素数1〜20の1価の炭化水素基を示す。mおよびpはそれぞれ0〜4の整数を示す。ただし、m+p>0である。) (In the general formula (1), R 1 and R 2 represent a 2 to 6-valent organic group having 2 to 30 carbon atoms. Each A may be the same or different, and OR 3 , SO 3 R 3 , CONR 3 R 4 , COOR 3 , and SO 2 NR 3 R 4, R 3 and R 4 represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms, and m and p are each 0 to 4 Represents an integer, where m + p> 0.)
(一般式(2)中、R5は炭素数2〜30の4〜8価の有機基を示す。R6は炭素数2〜30の2〜6価の有機基を示す。各Eは同じでも異なっていてもよく、OR7、SO3R7、CONR7R8、COOR7、SO2NR7R8から選ばれる。R7およびR8は水素原子または炭素数1〜10の1価の炭化水素基を示す。XおよびZはCO、N、NH、O、Sから選ばれ、YはCまたはNを示す。Z−Y間の結合は、単結合または2重結合である。各qは同じでも異なっていてもよく、0〜2の整数を示す。rおよびsはそれぞれ0〜4の整数を示す。ただし、r+s>0である。) (In General Formula (2), R 5 represents a C 4-30 tetravalent organic group. R 6 represents a C 2-30 bivalent organic group. Each E is the same. But it may be different, oR 7, SO 3 R 7 , CONR 7 R 8, COOR 7, selected from SO 2 NR 7 R 8 .R 7 and R 8 is a hydrogen atom or a monovalent C1-10 X and Z are selected from CO, N, NH, O and S, and Y is C or N. The bond between Z and Y is a single bond or a double bond. q may be the same or different and each represents an integer of 0 to 2. r and s each represent an integer of 0 to 4, provided that r + s> 0.
(一般式(3)中、各R9は同じでも異なっていてもよく炭素数1〜20の一価の炭化水素基を示す。R10およびR11は水素原子または炭素数1〜20の1価の炭化水素基を示す。R12およびR13は水素原子、CN、SO3R14、CONR14R15、COOR14、SO2NR14R15、炭素数2〜30の1価の芳香族基から選ばれる。R14およびR15は水素原子または炭素数1〜20の1価の炭化水素基を示す。nは0〜4の整数を示す。) (In General Formula (3), each R 9 may be the same or different and represents a monovalent hydrocarbon group having 1 to 20 carbon atoms. R 10 and R 11 are each a hydrogen atom or 1 to 20 carbon atoms. R 12 and R 13 represent a hydrogen atom, CN, SO 3 R 14 , CONR 14 R 15 , COOR 14 , SO 2 NR 14 R 15 , monovalent aromatic having 2 to 30 carbon atoms R 14 and R 15 represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms, and n represents an integer of 0 to 4.)
本発明によれば、熱処理後の膜厚が0.5μm以下であっても、現像時および熱処理後に良好な接着性を有し、かつ熱処理後に良好な絶縁破壊電圧を有する樹脂膜を形成することができるポジ型感光性樹脂組成物を得ることができる。 According to the present invention, even when the film thickness after heat treatment is 0.5 μm or less, the resin film having good adhesion at the time of development and after heat treatment and having a good breakdown voltage after heat treatment is formed. A positive-type photosensitive resin composition that can be obtained can be obtained.
本発明のポジ型感光性樹脂組成物は、(a)一般式(1)で表される構造単位および/または一般式(2)で表される構造単位を有する樹脂、(b)キノンジアジド化合物、(c)アントラキノン化合物、アセナフテン化合物、インドール化合物、メロシアニン化合物および下記一般式(3)で表されるスチリル化合物からなる群から選ばれる化合物であって、波長350nm以上450nm未満に吸収極大波長をもち、かつ波長450nm以上700nm以下に吸収極大波長をもたない化合物および(d)溶剤を含有する。 The positive photosensitive resin composition of the present invention comprises (a) a resin having a structural unit represented by the general formula (1) and / or a structural unit represented by the general formula (2), (b) a quinonediazide compound, (C) a compound selected from the group consisting of an anthraquinone compound, an acenaphthene compound, an indole compound, a merocyanine compound and a styryl compound represented by the following general formula (3), having an absorption maximum wavelength at a wavelength of 350 nm to less than 450 nm, And a compound having no absorption maximum wavelength at a wavelength of 450 nm to 700 nm and (d) a solvent.
一般式(1)中、R1およびR2は炭素数2〜30の2〜6価の有機基を示す。各Aは同じでも異なっていてもよく、OR3、SO3R3、CONR3R4、COOR3、SO2NR3R4から選ばれる。R3およびR4は水素原子または炭素数1〜20の1価の炭化水素基を示す。mおよびpはそれぞれ0〜4の整数を示す。ただし、m+p>0である。 In the general formula (1), R 1 and R 2 represent a 2 to 6-valent organic group having 2 to 30 carbon atoms. Each A may be the same or different and is selected from OR 3 , SO 3 R 3 , CONR 3 R 4 , COOR 3 and SO 2 NR 3 R 4 . R 3 and R 4 represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. m and p each represents an integer of 0 to 4. However, m + p> 0.
一般式(2)中、R5は炭素数2〜30の4〜8価の有機基を示す。R6は炭素数2〜30の2〜6価の有機基を示す。各Eは同じでも異なっていてもよく、OR7、SO3R7、CONR7R8、COOR7、SO2NR7R8から選ばれる。R7およびR8は水素原子または炭素数1〜10の1価の炭化水素基を示す。XおよびZはCO、N、NH、O、Sから選ばれ、YはCまたはNを示す。Z−Y間の結合は、単結合または2重結合である。各qは同じでも異なっていてもよく、0〜2の整数を示す。rおよびsはそれぞれ0〜4の整数を示す。ただし、r+s>0である。 In general formula (2), R 5 represents a C 4-30 tetravalent organic group. R 6 represents a divalent to hexavalent organic group having 2 to 30 carbon atoms. Each E may be the same or different and is selected from OR 7 , SO 3 R 7 , CONR 7 R 8 , COOR 7 , SO 2 NR 7 R 8 . R 7 and R 8 represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms. X and Z are selected from CO, N, NH, O and S, and Y represents C or N. The bond between Z and Y is a single bond or a double bond. Each q may be the same or different and represents an integer of 0 to 2. r and s each represent an integer of 0 to 4. However, r + s> 0.
一般式(3)中、各R9は同じでも異なっていてもよく炭素数1〜20の一価の炭化水素基を示す。R10およびR11は水素原子または炭素数1〜20の1価の炭化水素基を示す。R12およびR13は水素原子、CN、SO3R14、CONR14R15、COOR14、SO2NR14R15、炭素数2〜30の1価の芳香族基から選ばれる。R14およびR15は水素原子または炭素数1〜20の1価の炭化水素基を示す。nは0〜4の整数を示す。 In General Formula (3), each R 9 may be the same or different and represents a monovalent hydrocarbon group having 1 to 20 carbon atoms. R 10 and R 11 represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. R 12 and R 13 are selected from a hydrogen atom, CN, SO 3 R 14 , CONR 14 R 15 , COOR 14 , SO 2 NR 14 R 15 , and a monovalent aromatic group having 2 to 30 carbon atoms. R 14 and R 15 represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. n shows the integer of 0-4.
本発明に用いられる成分(a)のうち、一般式(1)で表される構造単位を有する樹脂は、主鎖にアミド結合を有したものであり、ポリイミド前駆体であるポリアミド酸、ポリアミド酸エステル、ポリベンゾオキサゾール前駆体となり得るポリヒドロキシアミド、ポリアミノアミド、ポリアミド、ポリアミドイミドなどを挙げることができるが、これら以外でも一般式(1)の構造単位を有するものであればよい。これらの中でも、ポリアミド酸、ポリアミド酸エステル、ポリヒドロキシアミドなどが好ましく用いられる。 Among the components (a) used in the present invention, the resin having the structural unit represented by the general formula (1) has an amide bond in the main chain, and is a polyimide precursor, polyamic acid, polyamic acid Examples thereof include polyhydroxyamides, polyaminoamides, polyamides, polyamideimides, and the like that can be esters and polybenzoxazole precursors, but any other compounds having the structural unit of the general formula (1) may be used. Among these, polyamic acid, polyamic acid ester, polyhydroxyamide and the like are preferably used.
また、一般式(1)で表される構造単位に代え、あるいは併用して一般式(2)で表される構造単位を有する樹脂を用いることもできる。一般式(2)で表される構造単位を有する樹脂としては、主鎖構造内にイミド環、オキサゾール環、イミダゾール環、チアゾール環などの環状構造を有する樹脂を挙げることができる。具体的には、ポリイミド、ポリベンゾオキサゾール、ポリベンゾイミダゾール、ポリベンゾチアゾールなどを挙げることができる。 Moreover, it can replace with the structural unit represented by General formula (1), or can use together and can use resin which has a structural unit represented by General formula (2). Examples of the resin having the structural unit represented by the general formula (2) include resins having a cyclic structure such as an imide ring, an oxazole ring, an imidazole ring, and a thiazole ring in the main chain structure. Specific examples include polyimide, polybenzoxazole, polybenzimidazole, and polybenzothiazole.
一般式(1)で表される構造単位を有する樹脂を閉環することにより得られる樹脂および一般式(2)で表される構造単位を有する樹脂は高い耐熱性を有し、熱処理後も接着性に優れる。一般式(1)または(2)で表される構造単位はそれぞれを単独で用いてもよいし、複数を混合、あるいは共重合して用いてもよい。本発明における成分(a)の樹脂は、一般式(1)または(2)で表される構造単位を10〜100,000有するものが好ましい。 The resin obtained by ring-closing the resin having the structural unit represented by the general formula (1) and the resin having the structural unit represented by the general formula (2) have high heat resistance and are adhesive even after heat treatment. Excellent. Each of the structural units represented by the general formula (1) or (2) may be used alone, or a plurality of structural units may be mixed or copolymerized. The resin of component (a) in the present invention preferably has 10 to 100,000 structural units represented by general formula (1) or (2).
本発明に好ましく用いられるポリイミドは、テトラカルボン酸、対応するテトラカルボン酸二無水物、テトラカルボン酸ジエステルジクロリドなどとジアミン、対応するジイソシアネート化合物、トリメチルシリル化ジアミンを反応させて得ることができる。ポリイミドは、一般にテトラカルボン酸二無水物とジアミンを反応させて得られるポリイミド前駆体の1つであるポリアミド酸を、加熱あるいは酸や塩基などの化学処理で脱水閉環することで得ることができる。本発明ではポリアミド酸が使用できるだけでなく、他のポリイミド前駆体であるポリアミド酸エステル、ポリアミド酸アミド、ポリイソイミドなども使用することができる。 The polyimide preferably used in the present invention can be obtained by reacting tetracarboxylic acid, corresponding tetracarboxylic dianhydride, tetracarboxylic acid diester dichloride and the like with diamine, corresponding diisocyanate compound, and trimethylsilylated diamine. Polyimide can be obtained by dehydrating and ring-closing polyamic acid, which is one of polyimide precursors generally obtained by reacting tetracarboxylic dianhydride and diamine, by heating or chemical treatment such as acid or base. In the present invention, not only polyamic acid can be used, but also other polyimide precursors such as polyamic acid ester, polyamic acid amide, and polyisoimide can be used.
本発明に好ましく用いられるポリベンゾオキサゾールは、ビスアミノフェノールとジカルボン酸、対応するジカルボン酸クロリド、ジカルボン酸活性エステルなどを反応させて得ることができる。一般にはビスアミノフェノール化合物とジカルボン酸を反応させて得られるポリベンゾオキサゾール前駆体の1つであるポリヒドロキシアミドを、加熱あるいは無水リン酸、塩基、カルボジイミド化合物などの化学処理で脱水閉環することでポリベンゾオキサゾールを得ることができる。 The polybenzoxazole preferably used in the present invention can be obtained by reacting bisaminophenol with a dicarboxylic acid, a corresponding dicarboxylic acid chloride, a dicarboxylic acid active ester and the like. In general, polyhydroxyamide, which is one of the polybenzoxazole precursors obtained by reacting bisaminophenol compounds with dicarboxylic acids, is subjected to dehydration and cyclization by heating or chemical treatment of phosphoric anhydride, base, carbodiimide compounds, etc. Polybenzoxazole can be obtained.
ポリベンゾイミダゾールは、テトラアミンとジカルボン酸、対応するジカルボン酸クロリド、ジカルボン酸活性エステルなどを反応させて得ることができる。一般にはビスアミノフェノール化合物とジカルボン酸を反応させて得られるポリベンゾイミダゾール前駆体の1つであるポリアミノアミドを、加熱あるいは無水リン酸、塩基、カルボジイミド化合物などの化学処理で脱水閉環することでポリベンゾイミダゾールを得ることができる。 Polybenzimidazole can be obtained by reacting tetraamine with dicarboxylic acid, the corresponding dicarboxylic acid chloride, dicarboxylic acid active ester and the like. In general, polyaminoamide, which is one of the polybenzimidazole precursors obtained by reacting bisaminophenol compounds with dicarboxylic acids, is subjected to dehydration and ring closure by heating or chemical treatment of phosphoric anhydride, base, carbodiimide compounds, etc. Benzimidazole can be obtained.
ポリベンゾチアゾールは、ビスアミノチオフェノールとジカルボン酸、対応するジカルボン酸クロリド、ジカルボン酸活性エステルなどを反応させて得ることができる。一般にはビスアミノチオフェノール化合物とジカルボン酸を反応させて得られるポリベンゾチアゾール前駆体の1つであるポリチオヒドロキシアミドを、加熱あるいは無水リン酸、塩基、カルボジイミド化合物などの化学処理で脱水閉環することでポリベンゾチアゾールを得ることができる。 Polybenzothiazole can be obtained by reacting bisaminothiophenol with dicarboxylic acid, the corresponding dicarboxylic acid chloride, dicarboxylic acid active ester and the like. In general, polythiohydroxyamide, which is one of the polybenzothiazole precursors obtained by reacting bisaminothiophenol compounds with dicarboxylic acids, is subjected to dehydration and ring closure by heating or chemical treatment of phosphoric anhydride, base, carbodiimide compounds, etc. Thus, polybenzothiazole can be obtained.
一般式(1)のR1は炭素数2〜30の2〜6価の有機基を示す。一般式(1)の−CO−R1(A)m−CO−を構成する酸成分としては、ジカルボン酸の例としてテレフタール酸、イソフタール酸、ジフェニルエーテルジカルボン酸、ビス(カルボキシフェニル)ヘキサフルオロプロパン、ビフェニルジカルボン酸、ベンゾフェノンジカルボン酸、トリフェニルジカルボン酸など、トリカルボン酸の例としてトリメリット酸、トリメシン酸、ジフェニルエーテルトリカルボン酸、ビフェニルトリカルボン酸などがあり、テトラカルボン酸の例としては、ピロメリット酸、3,3’,4,4’−ビフェニルテトラカルボン酸、2,3,3’,4’−ビフェニルテトラカルボン酸、2,2’,3,3’−ビフェニルテトラカルボン酸、3,3’,4,4’−ベンゾフェノンテトラカルボン酸、2,2’,3,3’−ベンゾフェノンテトラカルボン酸、2,2−ビス(3,4−ジカルボキシフェニル)ヘキサフルオロプロパン、2,2−ビス(2,3−ジカルボキシフェニル)ヘキサフルオロプロパン、1,1−ビス(3,4−ジカルボキシフェニル)エタン、1,1−ビス(2,3−ジカルボキシフェニル)エタン、ビス(3,4−ジカルボキシフェニル)メタン、ビス(2,3−ジカルボキシフェニル)メタン、ビス(3,4−ジカルボキシフェニル)スルホン、ビス(3,4−ジカルボキシフェニル)エーテル、1,2,5,6−ナフタレンテトラカルボン酸、2,3,6,7−ナフタレンテトラカルボン酸、2,3,5,6−ピリジンテトラカルボン酸、3,4,9,10−ペリレンテトラカルボン酸などの芳香族テトラカルボン酸や、ブタンテトラカルボン酸、1,2,3,4−シクロペンタンテトラカルボン酸などの脂肪族のテトラカルボン酸などを挙げることができる。これらのうち、トリカルボン酸、テトラカルボン酸では1つまたは2つのカルボキシル基が一般式(1)におけるA基に相当する。また、上に例示したジカルボン酸、トリカルボン酸、テトラカルボン酸を、一般式(1)におけるA基、好ましくは水酸基、スルホン酸基、スルホン酸アミド基またはスルホン酸エステル基などで1〜4個置換したものを用いることがより好ましい。これらの酸は、そのまま、あるいは酸無水物または活性エステルとして、単独又は2種以上を組み合わせて使用できる。 R 1 in the general formula (1) represents a divalent to hexavalent organic group having 2 to 30 carbon atoms. Examples of the acid component constituting —CO—R 1 (A) m —CO— of the general formula (1) include terephthalic acid, isophthalic acid, diphenyl ether dicarboxylic acid, bis (carboxyphenyl) hexafluoropropane, Examples of tricarboxylic acids such as biphenyl dicarboxylic acid, benzophenone dicarboxylic acid, and triphenyl dicarboxylic acid include trimellitic acid, trimesic acid, diphenyl ether tricarboxylic acid, and biphenyl tricarboxylic acid. Examples of tetracarboxylic acid include pyromellitic acid, 3 , 3 ′, 4,4′-biphenyltetracarboxylic acid, 2,3,3 ′, 4′-biphenyltetracarboxylic acid, 2,2 ′, 3,3′-biphenyltetracarboxylic acid, 3,3 ′, 4 , 4′-Benzophenonetetracarboxylic acid, 2,2 ′, 3,3′-ben Phenonetetracarboxylic acid, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane, 2,2-bis (2,3-dicarboxyphenyl) hexafluoropropane, 1,1-bis (3,4) -Dicarboxyphenyl) ethane, 1,1-bis (2,3-dicarboxyphenyl) ethane, bis (3,4-dicarboxyphenyl) methane, bis (2,3-dicarboxyphenyl) methane, bis (3 , 4-dicarboxyphenyl) sulfone, bis (3,4-dicarboxyphenyl) ether, 1,2,5,6-naphthalenetetracarboxylic acid, 2,3,6,7-naphthalenetetracarboxylic acid, 2,3 , 5,6-pyridinetetracarboxylic acid, 3,4,9,10-perylenetetracarboxylic acid and other aromatic tetracarboxylic acids, butanetetracar Examples thereof include aliphatic tetracarboxylic acids such as boronic acid and 1,2,3,4-cyclopentanetetracarboxylic acid. Among these, in tricarboxylic acid and tetracarboxylic acid, one or two carboxyl groups correspond to the A group in the general formula (1). Further, 1 to 4 dicarboxylic acids, tricarboxylic acids and tetracarboxylic acids exemplified above are substituted with A group in general formula (1), preferably a hydroxyl group, a sulfonic acid group, a sulfonic acid amide group or a sulfonic acid ester group. It is more preferable to use what was done. These acids can be used alone or in combination of two or more as an acid anhydride or an active ester.
一般式(1)のR2は炭素数2〜30の2〜6価の有機基を示す。一般式(1)の−NH−R2(A)p−NH−を構成するジアミン成分の例としては、ビス(3−アミノ−4−ヒドロキシフェニル)ヘキサフルオロプロパン、ビス(3−アミノ−4−ヒドロキシフェニル)スルホン、ビス(3−アミノ−4−ヒドロキシフェニル)プロパン、ビス(3−アミノ−4−ヒドロキシフェニル)メチレン、ビス(3−アミノ−4−ヒドロキシフェニル)エーテル、ビス(3−アミノ−4−ヒドロキシ)ビフェニル、ビス(3−アミノ−4−ヒドロキシフェニル)フルオレンなどのヒドロキシル基含有ジアミン、3,5−ジアミノ安息香酸、3−カルボキシ−4,4’−ジアミノジフェニルエーテルなどのカルボキシル基含有ジアミン、3−スルホン酸−4,4’−ジアミノジフェニルエーテルなどのスルホン酸含有ジアミン、ジチオヒドロキシフェニレンジアミンなどを挙げることができる。さらに、3,4’−ジアミノジフェニルエーテル、4,4’−ジアミノジフェニルエーテル、3,4’−ジアミノジフェニルメタン、4,4’−ジアミノジフェニルメタン、3,4’−ジアミノジフェニルスルホン、4,4’−ジアミノジフェニルスルホン、3,4’−ジアミノジフェニルスルフィド、4,4’−ジアミノジフェニルスルフィド、1,4−ビス(4−アミノフェノキシ)ベンゼン、ベンジン、m−フェニレンジアミン、p−フェニレンジアミン、1,5−ナフタレンジアミン、2,6−ナフタレンジアミン、ビス(4−アミノフェノキシフェニル)スルホン、ビス(3−アミノフェノキシフェニル)スルホン、ビス(4−アミノフェノキシ)ビフェニル、ビス{4−(4−アミノフェノキシ)フェニル}エーテル、1,4−ビス(4−アミノフェノキシ)ベンゼン、2,2’−ジメチル−4,4’−ジアミノビフェニル、2,2’−ジエチル−4,4’−ジアミノビフェニル、3,3’−ジメチル−4,4’−ジアミノビフェニル、3,3’−ジエチル−4,4’−ジアミノビフェニル、2,2’,3,3’−テトラメチル−4,4’−ジアミノビフェニル、3,3’,4,4’−テトラメチル−4,4’−ジアミノビフェニル、2,2’−ジ(トリフルオロメチル)−4,4’−ジアミノビフェニル、あるいはこれらの芳香族環にアルキル基やハロゲン原子で置換した化合物を挙げることができる。また、脂肪族のシクロヘキシルジアミン、メチレンビスシクロヘキシルアミンなどを全ジアミン成分の0〜50モル%使用してもよい。さらにこれらのジアミンは、メチル基、エチル基などの炭素数1〜20の1価の炭化水素基、トリフルオロメチル基などの炭素数1〜10のフルオロアルキル基、F、Cl、Br、Iなどの基で置換されていてもよい。これらのジアミンは、ジアミンとして、または対応するジイソシアネート化合物、トリメチルシリル化ジアミンとして、単独又は2種以上を組み合わせて使用できる。耐熱性が要求される用途では、芳香族ジアミンをジアミン全体の50モル%以上使用することが好ましい。 R 2 in the general formula (1) represents a divalent to hexavalent organic group having 2 to 30 carbon atoms. Examples of the diamine component constituting —NH—R 2 (A) p —NH— in the general formula (1) include bis (3-amino-4-hydroxyphenyl) hexafluoropropane, bis (3-amino-4) -Hydroxyphenyl) sulfone, bis (3-amino-4-hydroxyphenyl) propane, bis (3-amino-4-hydroxyphenyl) methylene, bis (3-amino-4-hydroxyphenyl) ether, bis (3-amino Hydroxyl group-containing diamines such as -4-hydroxy) biphenyl and bis (3-amino-4-hydroxyphenyl) fluorene, carboxyl groups such as 3,5-diaminobenzoic acid and 3-carboxy-4,4′-diaminodiphenyl ether Containing sulfonic acid such as diamine, 3-sulfonic acid-4,4′-diaminodiphenyl ether Diamines, such as dithio-hydroxy-phenylenediamine and the like. Furthermore, 3,4′-diaminodiphenyl ether, 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylmethane, 3,4′-diaminodiphenylsulfone, 4,4′-diaminodiphenyl Sulfone, 3,4′-diaminodiphenyl sulfide, 4,4′-diaminodiphenyl sulfide, 1,4-bis (4-aminophenoxy) benzene, benzine, m-phenylenediamine, p-phenylenediamine, 1,5-naphthalene Diamine, 2,6-naphthalenediamine, bis (4-aminophenoxyphenyl) sulfone, bis (3-aminophenoxyphenyl) sulfone, bis (4-aminophenoxy) biphenyl, bis {4- (4-aminophenoxy) phenyl} Ether, 1,4-bis (4- Minophenoxy) benzene, 2,2′-dimethyl-4,4′-diaminobiphenyl, 2,2′-diethyl-4,4′-diaminobiphenyl, 3,3′-dimethyl-4,4′-diaminobiphenyl, 3,3′-diethyl-4,4′-diaminobiphenyl, 2,2 ′, 3,3′-tetramethyl-4,4′-diaminobiphenyl, 3,3 ′, 4,4′-tetramethyl-4 , 4′-diaminobiphenyl, 2,2′-di (trifluoromethyl) -4,4′-diaminobiphenyl, or compounds obtained by substituting these aromatic rings with alkyl groups or halogen atoms. Moreover, you may use aliphatic cyclohexyl diamine, a methylene bis cyclohexyl amine, etc. 0-50 mol% of all the diamine components. Furthermore, these diamines are monovalent hydrocarbon groups having 1 to 20 carbon atoms such as methyl group and ethyl group, fluoroalkyl groups having 1 to 10 carbon atoms such as trifluoromethyl group, F, Cl, Br, I and the like. It may be substituted with a group. These diamines can be used alone or in combination of two or more as diamines or as corresponding diisocyanate compounds and trimethylsilylated diamines. In applications where heat resistance is required, it is preferable to use an aromatic diamine in an amount of 50 mol% or more of the total diamine.
一般式(1)において、AはOR3、SO3R3、CONR3R4、COOR3、SO2NR3R4から選ばれる基を示す。R3およびR4は水素原子または炭素数1〜20の1価の炭化水素基を示す。Aとして特に好ましいものは水酸基である。 In the general formula (1), A represents a group selected from OR 3 , SO 3 R 3 , CONR 3 R 4 , COOR 3 , and SO 2 NR 3 R 4 . R 3 and R 4 represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. Particularly preferred as A is a hydroxyl group.
本発明において一般式(2)で表される樹脂は、ポリイミド、ポリベンゾオキサゾール、ポリベンゾイミダゾール、ポリベンゾチアゾールなどの環状構造を有する樹脂を示す。一般式(2)のR5は炭素数2〜30の4〜8価の有機基を示し、芳香族環を1〜2個有するものが好ましい。一般式(2)のR5の構造としてより好ましいものは次のような構造、またはこれらの一部を炭素数1〜20のアルキル基、フルオロアルキル基、アルコキシル基、エステル基、ニトロ基、シアノ基、フッ素原子、塩素原子により1〜4個置換した構造が挙げられる。 In the present invention, the resin represented by the general formula (2) represents a resin having a cyclic structure such as polyimide, polybenzoxazole, polybenzimidazole, and polybenzothiazole. R 5 in the general formula (2) represents a tetravalent to octavalent organic group having 2 to 30 carbon atoms, and preferably has 1 to 2 aromatic rings. More preferable as the structure of R 5 in the general formula (2) is the following structure, or a part of them is an alkyl group having 1 to 20 carbon atoms, a fluoroalkyl group, an alkoxyl group, an ester group, a nitro group, a cyano group. Examples include a structure in which 1 to 4 groups are substituted with a group, a fluorine atom, or a chlorine atom.
一般式(2)のR6は炭素数2〜30の2〜6価の有機基を示し、芳香族環を1〜4個有するものが好ましい。一般式(2)のR6−(E)sの構造として好ましいものは、次に示す構造、またはこれらの一部を炭素数1〜20のアルキル基、フルオロアルキル基、アルコキシル基、エステル基、ニトロ基、シアノ基、フッ素原子、塩素原子により1〜4個置換した構造が挙げられる。 R 6 in the general formula (2) represents a divalent to hexavalent organic group having 2 to 30 carbon atoms, and preferably has 1 to 4 aromatic rings. What is preferable as the structure of R 6- (E) s of the general formula (2) is a structure shown below, or a part of these: an alkyl group having 1 to 20 carbon atoms, a fluoroalkyl group, an alkoxyl group, an ester group, Examples include a structure in which 1 to 4 groups are substituted with a nitro group, a cyano group, a fluorine atom, or a chlorine atom.
また、次に示す構造も挙げられる。 Moreover, the structure shown next is also mentioned.
Jは直接結合、−COO−、−CONH−、−CH2−、−C2H4−、−O−、−C3H6−、−SO2−、−S−、−Si(CH3)2−、−O−Si(CH3)2−O−、−C6H4−、−C6H4−O−C6H4−、−C6H4−C3H6−C6H4−または−C6H4−C3F6−C6H4−を示す。 J is a direct bond, —COO—, —CONH—, —CH 2 —, —C 2 H 4 —, —O—, —C 3 H 6 —, —SO 2 —, —S—, —Si (CH 3 ) 2− , —O—Si (CH 3 ) 2 —O—, —C 6 H 4 —, —C 6 H 4 —O—C 6 H 4 —, —C 6 H 4 —C 3 H 6 —C 6 H 4 - or -C 6 H 4 -C 3 F 6 -C 6 H 4 - shows a.
一般式(2)のEはOR7、SO3R7、CONR7R8、COOR7、SO2NR7R8から選ばれる基を示す。R7およびR8は水素または炭素数1〜20の1価の炭化水素基を示す。なかでも、Eは水酸基、カルボキシル基、エステル基、スルホン酸基、スルホン酸アミド基、スルホン酸エステル基が好ましい。 E in the general formula (2) represents a group selected from OR 7 , SO 3 R 7 , CONR 7 R 8 , COOR 7 , and SO 2 NR 7 R 8 . R 7 and R 8 represent hydrogen or a monovalent hydrocarbon group having 1 to 20 carbon atoms. Among these, E is preferably a hydroxyl group, a carboxyl group, an ester group, a sulfonic acid group, a sulfonic acid amide group, or a sulfonic acid ester group.
一般式(2)のXおよびZは、CO、N、NH、O、Sから選ばれる。Yは、NまたはCであり、YがCの時、X−YかY−Zのどちらか1つの結合は2重結合になる。qは0〜2の整数を表す。 X and Z in the general formula (2) are selected from CO, N, NH, O, and S. Y is N or C. When Y is C, one bond of XY or YZ is a double bond. q represents the integer of 0-2.
また、これらの樹脂の末端をモノアミンにより封止することで、樹脂のアルカリ水溶液に対する溶解速度を好ましい範囲に調整することができる。 Further, by sealing the ends of these resins with monoamine, the dissolution rate of the resins in the alkaline aqueous solution can be adjusted to a preferred range.
このようなモノアミンの例としては、アニリン、ナフチルアミン、アミノピリジンなど、フェノール性水酸基を有した、3−アミノ−4,6−ジヒドロキシピリミジン、2−アミノフェノール、3−アミノフェノール、4−アミノフェノール、5−アミノ−8−ヒドロキシキノリン、4−アミノ−8−ヒドロキシキノリン、1−ヒドロキシ−8−アミノナフタレン、1−ヒドロキシ−7−アミノナフタレン、1−ヒドロキシ−6−アミノナフタレン、1−ヒドロキシ−5−アミノナフタレン、1−ヒドロキシ−4−アミノナフタレン、1−ヒドロキシ−3−アミノナフタレン、1−ヒドロキシ−2−アミノナフタレン、1−アミノ−7−ヒドロキシナフタレン、2−ヒドロキシ−7−アミノナフタレン、2−ヒドロキシ−6−アミノナフタレン、2−ヒドロキシ−5−アミノナフタレン、2−ヒドロキシ−4−アミノナフタレン、2−ヒドロキシ−3−アミノナフタレン、1−アミノ−2−ヒドロキシナフタレンなど、カルボキシル基を有した、1−カルボキシ−8−アミノナフタレン、1−カルボキシ−7−アミノナフタレン、1−カルボキシ−6−アミノナフタレン、1−カルボキシ−5−アミノナフタレン、1−カルボキシ−4−アミノナフタレン、1−カルボキシ−3−アミノナフタレン、1−カルボキシ−2−アミノナフタレン、1−アミノ−7−カルボキシナフタレン、2−カルボキシ−7−アミノナフタレン、2−カルボキシ−6−アミノナフタレン、2−カルボキシ−5−アミノナフタレン、2−カルボキシ−4−アミノナフタレン、2−カルボキシ−3−アミノナフタレン、1−アミノ−2−カルボキシナフタレン、2−アミノニコチン酸、4−アミノニコチン酸、5−アミノニコチン酸、6−アミノニコチン酸、4−アミノサリチル酸、5−アミノサリチル酸、6−アミノサリチル酸、3−アミノ−o−トルイック酸、アメライド、2−アミノ安息香酸、3−アミノ安息香酸、4−アミノ安息香酸、2−アミノベンゼンスルホン酸、3−アミノベンゼンスルホン酸、4−アミノベンゼンスルホン酸など、チオール基を有した、5−アミノ−8−メルカプトキノリン、4−アミノ−8−メルカプトキノリン、1−メルカプト−8−アミノナフタレン、1−メルカプト−7−アミノナフタレン、1−メルカプト−6−アミノナフタレン、1−メルカプト−5−アミノナフタレン、1−メルカプト−4−アミノナフタレン、1−メルカプト−3−アミノナフタレン、1−メルカプト−2−アミノナフタレン、1−アミノ−7−メルカプトナフタレン、2−メルカプト−7−アミノナフタレン、2−メルカプト−6−アミノナフタレン、2−メルカプト−5−アミノナフタレン、2−メルカプト−4−アミノナフタレン、2−メルカプト−3−アミノナフタレン、1−アミノ−2−メルカプトナフタレン、3−アミノ−4,6−ジメルカプトピリミジン、2−アミノチオフェノール、3−アミノチオフェノール、4−アミノチオフェノールなどが挙げられる。 Examples of such monoamines include 3-amino-4,6-dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol having a phenolic hydroxyl group such as aniline, naphthylamine, and aminopyridine. 5-amino-8-hydroxyquinoline, 4-amino-8-hydroxyquinoline, 1-hydroxy-8-aminonaphthalene, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5 -Aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 1-hydroxy-3-aminonaphthalene, 1-hydroxy-2-aminonaphthalene, 1-amino-7-hydroxynaphthalene, 2-hydroxy-7-aminonaphthalene, 2 -Hydroxy-6-aminonaphthalene 2-hydroxy-5-aminonaphthalene, 2-hydroxy-4-aminonaphthalene, 2-hydroxy-3-aminonaphthalene, 1-amino-2-hydroxynaphthalene, etc., having a carboxyl group, 1-carboxy-8- Aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5-aminonaphthalene, 1-carboxy-4-aminonaphthalene, 1-carboxy-3-aminonaphthalene, 1- Carboxy-2-aminonaphthalene, 1-amino-7-carboxynaphthalene, 2-carboxy-7-aminonaphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-carboxy-4-amino Naphthalene, 2-carboxy-3-amino Phthalene, 1-amino-2-carboxynaphthalene, 2-aminonicotinic acid, 4-aminonicotinic acid, 5-aminonicotinic acid, 6-aminonicotinic acid, 4-aminosalicylic acid, 5-aminosalicylic acid, 6-aminosalicylic acid, 3-amino-o-toluic acid, amelide, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonic acid, etc. And 5-amino-8-mercaptoquinoline, 4-amino-8-mercaptoquinoline, 1-mercapto-8-aminonaphthalene, 1-mercapto-7-aminonaphthalene, 1-mercapto-6-amino having a thiol group Naphthalene, 1-mercapto-5-aminonaphthalene, 1-mercapto-4-amino Nonaphthalene, 1-mercapto-3-aminonaphthalene, 1-mercapto-2-aminonaphthalene, 1-amino-7-mercaptonaphthalene, 2-mercapto-7-aminonaphthalene, 2-mercapto-6-aminonaphthalene, 2- Mercapto-5-aminonaphthalene, 2-mercapto-4-aminonaphthalene, 2-mercapto-3-aminonaphthalene, 1-amino-2-mercaptonaphthalene, 3-amino-4,6-dimercaptopyrimidine, 2-aminothio Phenol, 3-aminothiophenol, 4-aminothiophenol and the like can be mentioned.
これらのうち、5−アミノ−8−ヒドロキシキノリン、1−ヒドロキシ−7−アミノナフタレン、1−ヒドロキシ−6−アミノナフタレン、1−ヒドロキシ−5−アミノナフタレン、1−ヒドロキシ−4−アミノナフタレン、2−ヒドロキシ−7−アミノナフタレン、2−ヒドロキシ−6−アミノナフタレン、2−ヒドロキシ−5−アミノナフタレン、1−カルボキシ−7−アミノナフタレン、1−カルボキシ−6−アミノナフタレン、1−カルボキシ−5−アミノナフタレン、2−カルボキシ−7−アミノナフタレン、2−カルボキシ−6−アミノナフタレン、2−カルボキシ−5−アミノナフタレン、2−アミノ安息香酸、3−アミノ安息香酸、4−アミノ安息香酸、4−アミノサリチル酸、5−アミノサリチル酸、6−アミノサリチル酸、2−アミノベンゼンスルホン酸、3−アミノベンゼンスルホン酸、4−アミノベンゼンスルホン酸、3−アミノ−4,6−ジヒドロキシピリミジン、2−アミノフェノール、3−アミノフェノール、4−アミノフェノール、2−アミノチオフェノール、3−アミノチオフェノール、4−アミノチオフェノールなどが親水性基があるため好ましく使用される。これらのモノアミンは、単独又は2種以上を組み合わせて使用できる。 Of these, 5-amino-8-hydroxyquinoline, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2 -Hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5 Aminonaphthalene, 2-carboxy-7-aminonaphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 4- Aminosalicylic acid, 5-aminosalicylic acid, 6-aminosalicylic acid 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonic acid, 3-amino-4,6-dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2- Aminothiophenol, 3-aminothiophenol, 4-aminothiophenol and the like are preferably used because they have a hydrophilic group. These monoamines can be used alone or in combination of two or more.
また、樹脂の末端を酸無水物、酸クロリド、モノカルボン酸で封止することで、アルカリ水溶液に対する溶解速度を好ましい範囲に調整することができる。 Further, by sealing the end of the resin with an acid anhydride, acid chloride, or monocarboxylic acid, the dissolution rate with respect to the alkaline aqueous solution can be adjusted to a preferred range.
このような酸無水物、酸クロリド、モノカルボン酸の例としては、無水フタル酸、無水マレイン酸、無水ナジック酸、シクロヘキサンジカルボン酸無水物、3−ヒドロキシフタル酸無水物などの酸無水物、2−カルボキシフェノール、3−カルボキシフェノール、4−カルボキシフェノール、2−カルボキシチオフェノール、3−カルボキシチオフェノール、4−カルボキシチオフェノール、1−ヒドロキシ−8−カルボキシナフタレン、1−ヒドロキシ−7−カルボキシナフタレン、1−ヒドロキシ−6−カルボキシナフタレン、1−ヒドロキシ−5−カルボキシナフタレン、1−ヒドロキシ−4−カルボキシナフタレン、1−ヒドロキシ−3−カルボキシナフタレン、1−ヒドロキシ−2−カルボキシナフタレン、1−メルカプト−8−カルボキシナフタレン、1−メルカプト−7−カルボキシナフタレン、1−メルカプト−6−カルボキシナフタレン、1−メルカプト−5−カルボキシナフタレン、1−メルカプト−4−カルボキシナフタレン、1−メルカプト−3−カルボキシナフタレン、1−メルカプト−2−カルボキシナフタレン、2−カルボキシベンゼンスルホン酸、3−カルボキシベンゼンスルホン酸、4−カルボキシベンゼンスルホン酸などのモノカルボン酸類及びこれらのカルボキシル基が酸クロリド化したモノ酸クロリド化合物、テレフタル酸、フタル酸、マレイン酸、シクロヘキサンジカルボン酸、3−ヒドロキシフタル酸、5−ノルボルネン−2,3−ジカルボン酸、1,2−ジカルボキシナフタレン、1,3−ジカルボキシナフタレン、1,4−ジカルボキシナフタレン、1,5−ジカルボキシナフタレン、1,6−ジカルボキシナフタレン、1,7−ジカルボキシナフタレン、1,8−ジカルボキシナフタレン、2,3−ジカルボキシナフタレン、2,6−ジカルボキシナフタレン、2,7−ジカルボキシナフタレンなどのジカルボン酸類の1つのカルボキシル基だけが酸クロリド化したモノ酸クロリド化合物、またはモノ酸クロリド化合物とN−ヒドロキシベンゾトリアゾールやN−ヒドロキシ−5−ノルボルネン−2,3−ジカルボキシイミドとの反応により得られる活性エステル化合物などが挙げられる。 Examples of such acid anhydrides, acid chlorides, and monocarboxylic acids include acid anhydrides such as phthalic anhydride, maleic anhydride, nadic anhydride, cyclohexanedicarboxylic anhydride, 3-hydroxyphthalic anhydride, -Carboxyphenol, 3-carboxyphenol, 4-carboxyphenol, 2-carboxythiophenol, 3-carboxythiophenol, 4-carboxythiophenol, 1-hydroxy-8-carboxynaphthalene, 1-hydroxy-7-carboxynaphthalene, 1-hydroxy-6-carboxynaphthalene, 1-hydroxy-5-carboxynaphthalene, 1-hydroxy-4-carboxynaphthalene, 1-hydroxy-3-carboxynaphthalene, 1-hydroxy-2-carboxynaphthalene, 1-mercapto-8 − Ruboxynaphthalene, 1-mercapto-7-carboxynaphthalene, 1-mercapto-6-carboxynaphthalene, 1-mercapto-5-carboxynaphthalene, 1-mercapto-4-carboxynaphthalene, 1-mercapto-3-carboxynaphthalene, 1 -Monocarboxylic acids such as mercapto-2-carboxynaphthalene, 2-carboxybenzenesulfonic acid, 3-carboxybenzenesulfonic acid, 4-carboxybenzenesulfonic acid, and monoacid chloride compounds in which these carboxyl groups are converted to acid chloride, terephthalic acid Phthalic acid, maleic acid, cyclohexanedicarboxylic acid, 3-hydroxyphthalic acid, 5-norbornene-2,3-dicarboxylic acid, 1,2-dicarboxynaphthalene, 1,3-dicarboxynaphthalene, 1,4-dica Boxynaphthalene, 1,5-dicarboxynaphthalene, 1,6-dicarboxynaphthalene, 1,7-dicarboxynaphthalene, 1,8-dicarboxynaphthalene, 2,3-dicarboxynaphthalene, 2,6-dicarboxy A monoacid chloride compound in which only one carboxyl group of dicarboxylic acids such as naphthalene and 2,7-dicarboxynaphthalene is acid chloride, or a monoacid chloride compound and N-hydroxybenzotriazole or N-hydroxy-5-norbornene-2 An active ester compound obtained by reaction with 1,3-dicarboximide, and the like.
これらのうち、無水フタル酸、無水マレイン酸、無水ナジック酸、シクロヘキサンジカルボン酸無水物、3−ヒドロキシフタル酸無水物などの酸無水物、3−カルボキシフェノール、4−カルボキシフェノール、3−カルボキシチオフェノール、4−カルボキシチオフェノール、1−ヒドロキシ−7−カルボキシナフタレン、1−ヒドロキシ−6−カルボキシナフタレン、1−ヒドロキシ−5−カルボキシナフタレン、1−メルカプト−7−カルボキシナフタレン、1−メルカプト−6−カルボキシナフタレン、1−メルカプト−5−カルボキシナフタレン、3−カルボキシベンゼンスルホン酸、4−カルボキシベンゼンスルホン酸などのモノカルボン酸類及びこれらのカルボキシル基が酸クロリド化したモノ酸クロリド化合物、テレフタル酸、フタル酸、マレイン酸、シクロヘキサンジカルボン酸、1,5−ジカルボキシナフタレン、1,6−ジカルボキシナフタレン、1,7−ジカルボキシナフタレン、2,6−ジカルボキシナフタレンなどのジカルボン酸類の1つのカルボキシル基だけが酸クロリド化したモノ酸クロリド化合物、またはモノ酸クロリド化合物とN−ヒドロキシベンゾトリアゾールやN−ヒドロキシ−5−ノルボルネン−2,3−ジカルボキシイミドとの反応により得られる活性エステル化合物が好ましく使用される。これらは、単独又は2種以上を組み合わせて使用できる。 Among these, phthalic anhydride, maleic anhydride, nadic anhydride, cyclohexanedicarboxylic anhydride, acid anhydrides such as 3-hydroxyphthalic anhydride, 3-carboxyphenol, 4-carboxyphenol, 3-carboxythiophenol 4-carboxythiophenol, 1-hydroxy-7-carboxynaphthalene, 1-hydroxy-6-carboxynaphthalene, 1-hydroxy-5-carboxynaphthalene, 1-mercapto-7-carboxynaphthalene, 1-mercapto-6-carboxy Monocarboxylic acid compounds such as naphthalene, 1-mercapto-5-carboxynaphthalene, 3-carboxybenzenesulfonic acid, 4-carboxybenzenesulfonic acid and the like, and monoacid chloride compounds in which these carboxyl groups are acid chloride, terephthalic , One carboxyl of dicarboxylic acids such as phthalic acid, maleic acid, cyclohexanedicarboxylic acid, 1,5-dicarboxynaphthalene, 1,6-dicarboxynaphthalene, 1,7-dicarboxynaphthalene, 2,6-dicarboxynaphthalene Preferred are monoacid chloride compounds in which only the group is acid chloride, or active ester compounds obtained by reaction of monoacid chloride compounds with N-hydroxybenzotriazole or N-hydroxy-5-norbornene-2,3-dicarboximide. used. These can be used alone or in combination of two or more.
上記したモノアミン、酸無水物、酸クロリド、モノカルボン酸などの末端封止剤の含有量は、成分(a)の樹脂に対して好ましくは0.1モル%以上、特に好ましくは5モル%以上であり、好ましくは60モル%以下、特に好ましくは50モル%以下である。このような範囲とすることで、樹脂組成物を塗布する際の溶液の粘性が適度で、かつ優れた膜物性を有した樹脂組成物を得ることができる。 The content of the end-capping agent such as monoamine, acid anhydride, acid chloride, monocarboxylic acid described above is preferably 0.1 mol% or more, particularly preferably 5 mol% or more, relative to the resin of component (a). And preferably 60 mol% or less, particularly preferably 50 mol% or less. By setting it as such a range, the viscosity of the solution at the time of apply | coating a resin composition can be obtained, and the resin composition which had the outstanding film | membrane physical property can be obtained.
樹脂中に導入された末端封止剤は、以下の方法で容易に検出できる。例えば、末端封止剤が導入された樹脂を、酸性溶液に溶解し、樹脂の構成単位であるアミン成分と酸無水物成分に分解し、これをガスクロマトグラフィー(GC)や、NMR測定することにより、末端封止剤を容易に検出できる。これとは別に、末端封止剤が導入された樹脂を直接、熱分解ガスクロマトグラフ(PGC)や赤外スペクトル及び13CNMRスペクトル測定で検出することが可能である。 The end-capping agent introduced into the resin can be easily detected by the following method. For example, a resin into which a terminal blocking agent has been introduced is dissolved in an acidic solution and decomposed into an amine component and an acid anhydride component, which are constituent units of the resin, and this is measured by gas chromatography (GC) or NMR. Thus, the end sealant can be easily detected. Apart from this, it is possible to directly detect the resin into which the end-capping agent has been introduced by pyrolysis gas chromatography (PGC), infrared spectrum and 13 C NMR spectrum measurement.
また、基板に対する接着性を高めるとともに、洗浄などに用いられる酸素プラズマ、UVオゾン処理に対する耐性を高めることを目的として、酸二無水物成分として、ジメチルシランジフタル酸、1,3−ビス(フタル酸)テトラメチルジシロキサンなどのシリコン原子含有テトラカルボン酸の二無水物を全酸二無水物成分の1〜30モル%共重合するか、ジアミン成分として、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン、1,3−ビス(4−アニリノ)テトラメチルジシロキサンなどのシリコン原子含有ジアミンを全ジアミン成分の1〜30モル%共重合することもできる。 In addition, as an acid dianhydride component, dimethylsilanediphthalic acid, 1,3-bis (phthalate) is used for the purpose of improving the adhesion to the substrate and enhancing the resistance to oxygen plasma used for cleaning and UV ozone treatment. Acid) copolymerize silicon atom-containing tetracarboxylic dianhydride such as tetramethyldisiloxane, 1-30 mol% of total acid dianhydride component, or 1,3-bis (3-aminopropyl) as diamine component ) Silicon atom-containing diamines such as tetramethyldisiloxane and 1,3-bis (4-anilino) tetramethyldisiloxane can be copolymerized in an amount of 1 to 30 mol% of the total diamine components.
本発明のポジ型感光性樹脂組成物は、成分(b)としてキノンジアジド化合物を含有する。キノンジアジド化合物は、ポリヒドロキシ化合物にキノンジアジドのスルホン酸がエステルで結合したもの、ポリアミノ化合物にキノンジアジドのスルホン酸がスルホンアミド結合したもの、ポリヒドロキシポリアミノ化合物にキノンジアジドのスルホン酸がエステル結合および/またはスルホンアミド結合したものなどが挙げられる。これらポリヒドロキシ化合物やポリアミノ化合物の全ての官能基がキノンジアジドで置換されていなくてもよいが、官能基全体の50モル%以上がキノンジアジドで置換されていることが好ましい。50モル%以上置換されているキノンジアジド化合物を使用することで、キノンジアジド化合物のアルカリ水溶液に対する親和性が低下し、未露光部の樹脂組成物のアルカリ水溶液に対する溶解性を大きく低下させるとともに、露光によりキノンジアジドスルホニル基がインデンカルボン酸に変化し、露光部の樹脂組成物のアルカリ水溶液に対する大きな溶解速度を得ることができ、結果として組成物の露光部と未露光部の溶解速度比を大きくして、高い解像度でパターンを得ることができる。このようなキノンジアジド化合物を用いることで、一般的な紫外線である水銀灯のi線(365nm)、h線(405nm)、g線(436nm)に感光するポジ型の感光性樹脂組成物を得ることができる。また、成分(b)として2種類以上のキノンジアジド化合物を使用することもできる。 The positive photosensitive resin composition of the present invention contains a quinonediazide compound as the component (b). The quinonediazide compound is a compound in which a sulfonic acid of quinonediazide is bonded to a polyhydroxy compound with an ester, a sulfonic acid of quinonediazide is bonded to a polyamino compound in a sulfonamide, and a sulfonic acid of quinonediazide is bonded to a polyhydroxypolyamino compound in an ester bond and / or sulfonamide. Examples include those that are combined. Although all the functional groups of these polyhydroxy compounds and polyamino compounds may not be substituted with quinonediazide, it is preferable that 50 mol% or more of the entire functional groups are substituted with quinonediazide. By using a quinonediazide compound substituted by 50 mol% or more, the affinity of the quinonediazide compound with respect to the aqueous alkaline solution is reduced, and the solubility of the resin composition in the unexposed area in the aqueous alkaline solution is greatly reduced. The sulfonyl group is changed to indenecarboxylic acid, and a large dissolution rate of the resin composition of the exposed portion in the aqueous alkali solution can be obtained. As a result, the dissolution rate ratio of the exposed portion and the unexposed portion of the composition is increased to be high. Patterns can be obtained with resolution. By using such a quinonediazide compound, it is possible to obtain a positive photosensitive resin composition that is sensitive to i-line (365 nm), h-line (405 nm), and g-line (436 nm) of a mercury lamp that is a general ultraviolet ray. it can. Two or more quinonediazide compounds can also be used as component (b).
ポリヒドロキシ化合物としては、Bis−Z、BisP−EZ、TekP−4HBPA、TrisP−HAP、TrisP−PA、TrisP−SA、TrisOCR−PA、BisOCHP−Z、BisP−MZ、BisP−PZ、BisP−IPZ、BisOCP−IPZ、BisP−CP、BisRS−2P、BisRS−3P、BisP−OCHP、メチレントリス−FR−CR、BisRS−26X、DML−MBPC、DML−MBOC、DML−OCHP、DML−PCHP、DML−PC、DML−PTBP、DML−34X、DML−EP,DML−POP、ジメチロール−BisOC−P、DML−PFP、DML−PSBP、DML−MTrisPC、TriML−P、TriML−35XL、TML−BP、TML−HQ、TML−pp−BPF、TML−BPA、TMOM−BP、HML−TPPHBA、HML−TPHAP(以上、商品名、本州化学工業(株)製)、BIR−OC、BIP−PC、BIR−PC、BIR−PTBP、BIR−PCHP、BIP−BIOC−F、4PC、BIR−BIPC−F、TEP−BIP−A、46DMOC、46DMOEP、TM−BIP−A(以上、商品名、旭有機材工業(株)製)、2,6−ジメトキシメチル−4−t−ブチルフェノール、2,6−ジメトキシメチル−p−クレゾール、2,6−ジアセトキシメチル−p−クレゾール、ナフトール、テトラヒドロキシベンゾフェノン、没食子酸メチルエステル、ビスフェノールA、ビスフェノールE、メチレンビスフェノール、BisP−AP(商品名、本州化学工業(株)製)などが挙げられるが、これらに限定されない。 Polyhydroxy compounds include Bis-Z, BisP-EZ, TekP-4HBPA, TrisP-HAP, TrisP-PA, TrisP-SA, TrisOCR-PA, BisOCHP-Z, BisP-MZ, BisP-PZ, BisP-IPZ, BisOCP-IPZ, BisP-CP, BisRS-2P, BisRS-3P, BisP-OCHP, Methylenetris-FR-CR, BisRS-26X, DML-MBPC, DML-MBOC, DML-OCHP, DML-PCHP, DML-PC , DML-PTBP, DML-34X, DML-EP, DML-POP, dimethylol-BisOC-P, DML-PFP, DML-PSBP, DML-MTrisPC, TriML-P, TriML-35XL, TML-BP, TML HQ, TML-pp-BPF, TML-BPA, TMOM-BP, HML-TPPHBA, HML-TPHAP (above, trade name, manufactured by Honshu Chemical Industry Co., Ltd.), BIR-OC, BIP-PC, BIR-PC, BIR-PTBP, BIR-PCHP, BIP-BIOC-F, 4PC, BIR-BIPC-F, TEP-BIP-A, 46DMOC, 46DMOEP, TM-BIP-A (above, trade name, Asahi Organic Materials Co., Ltd.) Manufactured), 2,6-dimethoxymethyl-4-t-butylphenol, 2,6-dimethoxymethyl-p-cresol, 2,6-diacetoxymethyl-p-cresol, naphthol, tetrahydroxybenzophenone, gallic acid methyl ester, Bisphenol A, bisphenol E, methylene bisphenol, BisP-AP (trade name) Honshu Chemical Industry like Ltd.), but is not limited thereto.
ポリアミノ化合物としては、1,4−フェニレンジアミン、1,3−フェニレンジアミン、4,4’−ジアミノジフェニルエーテル、4,4’−ジアミノジフェニルメタン、4,4’−ジアミノジフェニルスルホン、4,4’−ジアミノジフェニルスルフィド等が挙げられるが、これらに限定されない。 Examples of polyamino compounds include 1,4-phenylenediamine, 1,3-phenylenediamine, 4,4′-diaminodiphenyl ether, 4,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylsulfone, and 4,4′-diamino. Examples thereof include, but are not limited to, diphenyl sulfide.
また、ポリヒドロキシポリアミノ化合物としては、2,2−ビス(3−アミノ−4−ヒドロキシフェニル)ヘキサフルオロプロパン、3,3’−ジヒドロキシベンジジン等が挙げられるが、これらに限定されない。 Examples of the polyhydroxypolyamino compound include, but are not limited to, 2,2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane, 3,3′-dihydroxybenzidine and the like.
本発明において、キノンジアジドのスルホン酸エステルは5−ナフトキノンジアジドスルホニル基、4−ナフトキノンジアジドスルホニル基のいずれも好ましく用いられる。4−ナフトキノンジアジドスルホニルエステル化合物は水銀灯のi線領域に吸収を持っており、i線露光に適している。5−ナフトキノンジアジドスルホニルエステル化合物は水銀灯のg線領域まで吸収が伸びており、g線露光および全波長露光に適している。本発明においては、露光する波長によって4−ナフトキノンジアジドスルホニルエステル化合物、5−ナフトキノンジアジドスルホニルエステル化合物を選択することが好ましい。また、同一分子中に4−ナフトキノンジアジドスルホニル基、5−ナフトキノンジアジドスルホニル基を併用した、ナフトキノンジアジドスルホニルエステル化合物を得ることもできるし、4−ナフトキノンジアジドスルホニルエステル化合物と5−ナフトキノンジアジドスルホニルエステル化合物を併用することもできる。 In the present invention, the sulfonic acid ester of quinonediazide is preferably a 5-naphthoquinonediazidesulfonyl group or a 4-naphthoquinonediazidesulfonyl group. The 4-naphthoquinonediazide sulfonyl ester compound has absorption in the i-line region of a mercury lamp and is suitable for i-line exposure. The 5-naphthoquinonediazide sulfonyl ester compound has absorption extending to the g-line region of a mercury lamp, and is suitable for g-line exposure and full-wavelength exposure. In the present invention, it is preferable to select a 4-naphthoquinone diazide sulfonyl ester compound or a 5-naphthoquinone diazide sulfonyl ester compound depending on the wavelength to be exposed. Further, a naphthoquinone diazide sulfonyl ester compound in which 4-naphthoquinone diazide sulfonyl group and 5-naphthoquinone diazide sulfonyl group are used in the same molecule can be obtained, or 4-naphthoquinone diazide sulfonyl ester compound and 5-naphthoquinone diazide sulfonyl ester compound. Can also be used together.
また、キノンジアジド化合物の分子量は、熱処理により得られる膜の耐熱性、機械特性、接着性の点から、好ましくは300以上、より好ましくは350以上であり、好ましくは3000以下、より好ましくは1500以下である。また、キノンジアジド化合物の含有量は、成分(a)の樹脂100重量部に対して、好ましくは1重量部以上、より好ましくは3重量部以上であり、好ましくは50重量部以下、より好ましくは40重量部以下である。1〜50重量部であれば、熱処理後の膜の耐熱性、耐薬品性、機械特性を維持しつつ、感光性を付与することができる。 In addition, the molecular weight of the quinonediazide compound is preferably 300 or more, more preferably 350 or more, preferably 3000 or less, more preferably 1500 or less, from the viewpoint of heat resistance, mechanical properties, and adhesiveness of the film obtained by heat treatment. is there. The content of the quinonediazide compound is preferably 1 part by weight or more, more preferably 3 parts by weight or more, and preferably 50 parts by weight or less, more preferably 40 parts by weight with respect to 100 parts by weight of the component (a) resin. Less than parts by weight. If it is 1-50 weight part, photosensitivity can be provided, maintaining the heat resistance of the film | membrane after heat processing, chemical resistance, and a mechanical characteristic.
本発明に用いられるキノンジアジド化合物は、例えば、5−ナフトキノンジアジドスルホニルクロライドとフェノール化合物をトリエチルアミン存在下で反応させる方法などにより合成される。フェノール化合物の合成方法は、酸触媒下で、α−(ヒドロキシフェニル)スチレン誘導体を多価フェノール化合物と反応させる方法などがある。 The quinonediazide compound used in the present invention is synthesized, for example, by a method of reacting 5-naphthoquinonediazidesulfonyl chloride with a phenol compound in the presence of triethylamine. Examples of the method for synthesizing a phenol compound include a method in which an α- (hydroxyphenyl) styrene derivative is reacted with a polyhydric phenol compound under an acid catalyst.
また、必要に応じて感光性樹脂組成物のアルカリ現像性を補う目的で、上記ポリヒドロキシ化合物をナフトキノンジアジドでエステル化せず、そのまま用いても構わない。このポリヒドロキシ化合物を含有すると、感光性樹脂組成物は露光前はアルカリ現像液にほとんど溶解せず、露光すると容易にアルカリ現像液に溶解するため、現像による膜減りが少なくかつ短時間での現像が容易になる。この場合、ポリヒドロキシ化合物の含有量は、成分(a)の樹脂100重量部に対して、好ましくは1重量部以上、より好ましくは3重量部以上であり、好ましくは50重量部以下、より好ましくは40重量部以下である。1〜40重量部であれば、未露光部の膜減りを抑制しつつ高感度化できる。 Further, if necessary, for the purpose of supplementing the alkali developability of the photosensitive resin composition, the polyhydroxy compound may be used as it is without being esterified with naphthoquinonediazide. When this polyhydroxy compound is contained, the photosensitive resin composition hardly dissolves in the alkali developer before exposure, and easily dissolves in the alkali developer upon exposure, so that the film loss due to development is small and development in a short time is possible. Becomes easier. In this case, the content of the polyhydroxy compound is preferably 1 part by weight or more, more preferably 3 parts by weight or more, preferably 50 parts by weight or less, more preferably 100 parts by weight of the resin of component (a). Is 40 parts by weight or less. If it is 1-40 weight part, it can raise sensitivity, suppressing the film loss of an unexposed part.
本発明のポジ型感光性樹脂組成物は、成分(c)としてアントラキノン化合物、アセナフテン化合物、インドール化合物、メロシアニン化合物および下記一般式(3)で表されるスチリル化合物からなる群から選ばれる化合物であって、波長350nm以上450nm未満に吸収極大波長をもち、かつ波長450nm以上700nm以下に吸収極大波長をもたない化合物を含有する。 The positive photosensitive resin composition of the present invention is a compound selected from the group consisting of an anthraquinone compound, an acenaphthene compound, an indole compound, a merocyanine compound and a styryl compound represented by the following general formula (3) as the component (c). And a compound having an absorption maximum wavelength at a wavelength of 350 nm to less than 450 nm and having no absorption maximum wavelength at a wavelength of 450 nm to 700 nm.
一般式(3)中、各R9は同じでも異なっていてもよく炭素数1〜20の1価の炭化水素基を示す。R10およびR11は水素原子または炭素数1〜20の1価の炭化水素基を示す。R12およびR13は水素原子、CN、SO3R14、CONR14R15、COOR14、SO2NR14R15、炭素数2〜30の1価の芳香族基から選ばれる。R14およびR15は水素原子または炭素数1〜20の1価の炭化水素基を示す。nは0〜4の整数を示す。 In General Formula (3), each R 9 may be the same or different and represents a monovalent hydrocarbon group having 1 to 20 carbon atoms. R 10 and R 11 represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. R 12 and R 13 are selected from a hydrogen atom, CN, SO 3 R 14 , CONR 14 R 15 , COOR 14 , SO 2 NR 14 R 15 , and a monovalent aromatic group having 2 to 30 carbon atoms. R 14 and R 15 represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. n shows the integer of 0-4.
成分(c)は波長350nm以上450nm未満に吸収極大波長をもつことで、一般的な紫外線である水銀灯のi線(365nm)、h線(405nm)、g線(436nm)で露光したとき、基板からの反射光による過度の露光やハレーションを防止できるため、現像時の未露光部の接着性を上げることができる。また、波長450nm以上700nm以下に吸収極大波長をもたないことで、選択的に波長350以上450nm未満の範囲で光吸収を行うことができる。成分(c)の吸収極大波長は、ガンマブチロラクトンに溶解して測定することにより求められる。 Component (c) has an absorption maximum wavelength at a wavelength of 350 nm or more and less than 450 nm, and when exposed to i-ray (365 nm), h-ray (405 nm), and g-ray (436 nm) of a mercury lamp, which is a general ultraviolet ray, Excessive exposure and halation due to the reflected light from the light can be prevented, so that the adhesion of the unexposed part during development can be improved. Further, by not having an absorption maximum wavelength at a wavelength of 450 nm or more and 700 nm or less, light absorption can be selectively performed in a wavelength range of 350 or more and less than 450 nm. The absorption maximum wavelength of the component (c) can be determined by dissolving in gamma-butyrolactone and measuring.
さらに、成分(c)は、上記のような吸収特性を持つ化合物の中でもアントラキノン化合物、アセナフテン化合物、インドール化合物、メロシアニン化合物および一般式(3)で表されるスチリル化合物からなる群より選ばれる化合物である。このような化合物を用いることで、過度の露光やハレーションの防止効果がより大きくなり、現像時の未露光部の接着性をより上げることができる。 Furthermore, component (c) is a compound selected from the group consisting of anthraquinone compounds, acenaphthene compounds, indole compounds, merocyanine compounds, and styryl compounds represented by the general formula (3) among the compounds having the absorption characteristics as described above. is there. By using such a compound, the effect of preventing excessive exposure and halation is further increased, and the adhesion of the unexposed part during development can be further increased.
成分(c)は有機溶剤に可溶であることが好ましい。本発明において有機溶剤に可溶であるとは、N−メチル−2−ピロリドン、ガンマブチロラクトン、N,N−ジメチルホルムアミド、N,N−ジメチルアセトアミド、ジメチルスルホキシド、テトラヒドロフラン、ジオキサン、プロピレングリコールモノメチルエーテル、アセトン、メチルエチルケトン、ジイソブチルケトン、ジアセトンアルコール、3−メチル−3−メトキシブタノール、酢酸エチル、プロピレングリコールモノメチルエーテルアセテート、乳酸エチル、トルエン、キシレンより選ばれる1種以上の溶剤に、23℃で30重量%以上溶解することをいう。有機溶剤に可溶であれば、(c)成分が感光性樹脂組成物中で凝集することなく、現像時における接着性がより向上し、熱処理後の膜の絶縁破壊電圧が向上する。 Component (c) is preferably soluble in an organic solvent. In the present invention, soluble in an organic solvent means N-methyl-2-pyrrolidone, gamma butyrolactone, N, N-dimethylformamide, N, N-dimethylacetamide, dimethyl sulfoxide, tetrahydrofuran, dioxane, propylene glycol monomethyl ether, 30 weights at 23 ° C. in one or more solvents selected from acetone, methyl ethyl ketone, diisobutyl ketone, diacetone alcohol, 3-methyl-3-methoxybutanol, ethyl acetate, propylene glycol monomethyl ether acetate, ethyl lactate, toluene, xylene % Or more. If it is soluble in an organic solvent, the component (c) is not aggregated in the photosensitive resin composition, the adhesion during development is further improved, and the dielectric breakdown voltage of the film after heat treatment is improved.
このような成分(c)の具体例としては、1−ヒドロキシアントラキノン、2−ヒドロキシアントラキノン、3−ヒドロキシアントラキノン、1−ヒドロキシ−2−メトキシアントラキノン、1,2−ジヒドロキシアントラキノン、1,3−ジヒドロキシアントラキノン、1,4−ジヒドロキシアントラキノン、1,5−ジヒドロキシアントラキノン、1,8−ジヒドロキシアントラキノン、1,3−ジヒドロキシ−3−メチルアントラキノン、1,5−ジヒドロキシ−3−メチルアントラキノン、1,6−ジヒドロキシ−3−メチルアントラキノン、1,7−ジヒドロキシ−3−メチルアントラキノン、1,8−ジヒドロキシ−3−メチルアントラキノン、1,8−ジヒドロキシ−2−メチルアントラキノン、1,3−ジヒドロキシ−2−メトキシアントラキノン、2,4−ジヒドロキシ−1−メトキシアントラキノン、2,5−ジヒドロキシ−1−メトキシアントラキノン、2,8−ジヒドロキシ−1−メトキシアントラキノン、1,8−ジヒドロキシ−3−メトキシ−6−メチルアントラキノン、1,2,3−トリヒドロキシアントラキノン、1,3,5−トリヒドロキシアントラキノン、2−アミノアントラキノン、2−アミノ−1−ニトロアントラキノン、2,6−ジアミノアントラキノン、1−メトキシアントラキノン、2−メトキシアントラキノン、1,8−ジメトキシアントラキノン、1−アセチルアミノアントラキノン、2−アセチルアミノアントラキノン(以上アントラキノン化合物)、5−ニトロアセナフテン(アセナフテン化合物)、BONASORB UA−3912(商品名、オリエント化学(株)製)、4−(1H−インドール)−3−イルメチレン−2−フェニルオキサゾリン−5−オン、3−(β−シアノ−β−ベンゾイルビニル)インドール(以上インドール化合物)、1,3−ジメチル−5−[2−(3−メチルオキサゾリジン−2−イリデン)エチリデン]ピリミジン−2,4,6−トリオン、1,3−ジメチル−5−[2−(1−メチルピロリジン−2−イリデン)エチリデン]ピリミジン−2,4,6−トリオン、1,3−ジメチル−5−[2−(3−メチルチアゾリジン−2−イリデン)エチリデン]ピリミジン−2,4,6−トリオン、3−エチル−5−[2−(3−メチルオキサゾリジン−2−イリデン)エチリデン]−2−チオキソオキサゾリジン−4−オン、3−エチル−5−[2−(1−メチルピロリジン−2−イリデン)エチリデン]−2−チオキソオキサゾリジン−4−オン(以上メロシアニン化合物)、2−(4−ジメチルアミノスチリル)ベンゾオキサゾール、2−[2−[4−(ジメチルアミノ)フェニル]エテニル]ナフト[1,2−d]チアゾール、2−(4−ジメチルアミノスチリル)ベンゾチアゾール、4−(4−ジメチルアミノスチリル)キノリン、4−(β−ニトロビニル)−N,N−ジメチルアニリン、4−(β−カルボメトキシ−β−シアノビニル)−N,N−ジメチルアニリン、2−(β,β−ジシアノビニル)アニリン、4−(β,β−ジシアノビニル)アニリン、4−(β,β−ジシアノビニル)−3−メチル−N,N−ジメチルアニリン(以上、スチリル化合物)などが挙げられるが、これらに限定されない。このなかで、1−メトキシアントラキノン、2−メトキシアントラキノン、1,8−ジメトキシアントラキノン、1−アセチルアミノアントラキノン、2−アセチルアミノアントラキノン、5−ニトロアセナフテン、BONASORB UA−3912、1,3−ジメチル−5−[2−(3−メチルオキサゾリジン−2−イリデン)エチリデン]ピリミジン−2,4,6−トリオン、1,3−ジメチル−5−[2−(1−メチルピロリジン−2−イリデン)エチリデン]ピリミジン−2,4,6−トリオン、2−(4−ジメチルアミノスチリル)ベンゾオキサゾール、2−[2−[4−(ジメチルアミノ)フェニル]エテニル]ナフト[1,2−d]チアゾール、2−(4−ジメチルアミノスチリル)ベンゾチアゾール、4−(4−ジメチルアミノスチリル)キノリンが特に好ましい。 Specific examples of such component (c) include 1-hydroxyanthraquinone, 2-hydroxyanthraquinone, 3-hydroxyanthraquinone, 1-hydroxy-2-methoxyanthraquinone, 1,2-dihydroxyanthraquinone, 1,3-dihydroxyanthraquinone. 1,4-dihydroxyanthraquinone, 1,5-dihydroxyanthraquinone, 1,8-dihydroxyanthraquinone, 1,3-dihydroxy-3-methylanthraquinone, 1,5-dihydroxy-3-methylanthraquinone, 1,6-dihydroxy- 3-methylanthraquinone, 1,7-dihydroxy-3-methylanthraquinone, 1,8-dihydroxy-3-methylanthraquinone, 1,8-dihydroxy-2-methylanthraquinone, 1,3-dihydroxy-2- Toxianthraquinone, 2,4-dihydroxy-1-methoxyanthraquinone, 2,5-dihydroxy-1-methoxyanthraquinone, 2,8-dihydroxy-1-methoxyanthraquinone, 1,8-dihydroxy-3-methoxy-6-methylanthraquinone 1,2,3-trihydroxyanthraquinone, 1,3,5-trihydroxyanthraquinone, 2-aminoanthraquinone, 2-amino-1-nitroanthraquinone, 2,6-diaminoanthraquinone, 1-methoxyanthraquinone, 2-methoxy Anthraquinone, 1,8-dimethoxyanthraquinone, 1-acetylaminoanthraquinone, 2-acetylaminoanthraquinone (above anthraquinone compound), 5-nitroacenaphthene (acenaphthene compound), BONASORB U A-3912 (trade name, manufactured by Orient Chemical Co., Ltd.), 4- (1H-indole) -3-ylmethylene-2-phenyloxazolin-5-one, 3- (β-cyano-β-benzoylvinyl) indole ( Indole compound), 1,3-dimethyl-5- [2- (3-methyloxazolidine-2-ylidene) ethylidene] pyrimidine-2,4,6-trione, 1,3-dimethyl-5- [2- ( 1-methylpyrrolidine-2-ylidene) ethylidene] pyrimidine-2,4,6-trione, 1,3-dimethyl-5- [2- (3-methylthiazolidine-2-ylidene) ethylidene] pyrimidine-2,4 6-trione, 3-ethyl-5- [2- (3-methyloxazolidine-2-ylidene) ethylidene] -2-thioxooxazolidin-4-one, 3-ethyl Til-5- [2- (1-methylpyrrolidin-2-ylidene) ethylidene] -2-thioxooxazolidin-4-one (above merocyanine compound), 2- (4-dimethylaminostyryl) benzoxazole, 2- [ 2- [4- (dimethylamino) phenyl] ethenyl] naphtho [1,2-d] thiazole, 2- (4-dimethylaminostyryl) benzothiazole, 4- (4-dimethylaminostyryl) quinoline, 4- (β -Nitrovinyl) -N, N-dimethylaniline, 4- (β-carbomethoxy-β-cyanovinyl) -N, N-dimethylaniline, 2- (β, β-dicyanovinyl) aniline, 4- (β, β- Dicyanovinyl) aniline, 4- (β, β-dicyanovinyl) -3-methyl-N, N-dimethylaniline (hereinafter referred to as styryl compound), and the like. It is, but is not limited thereto. Among them, 1-methoxyanthraquinone, 2-methoxyanthraquinone, 1,8-dimethoxyanthraquinone, 1-acetylaminoanthraquinone, 2-acetylaminoanthraquinone, 5-nitroacenaphthene, BONASORB UA-3912, 1,3-dimethyl- 5- [2- (3-Methyloxazolidine-2-ylidene) ethylidene] pyrimidine-2,4,6-trione, 1,3-dimethyl-5- [2- (1-methylpyrrolidin-2-ylidene) ethylidene] Pyrimidine-2,4,6-trione, 2- (4-dimethylaminostyryl) benzoxazole, 2- [2- [4- (dimethylamino) phenyl] ethenyl] naphtho [1,2-d] thiazole, 2- (4-Dimethylaminostyryl) benzothiazole, 4- (4-dimethyl) Minosuchiriru) quinoline are particularly preferred.
成分(c)の含有量は、成分(a)の樹脂100重量部に対して0.5〜10重量部が好ましい。0.5重量部以上であれば、より高い接着性が得られる。また、10重量部以下にすると、露光感度を維持することができる。 The content of the component (c) is preferably 0.5 to 10 parts by weight with respect to 100 parts by weight of the resin of the component (a). If it is 0.5 part by weight or more, higher adhesiveness can be obtained. When the amount is 10 parts by weight or less, exposure sensitivity can be maintained.
本発明のポジ型感光性樹脂組成物は、成分(d)として溶剤を含有する。本発明に用いられる溶剤としては、N−メチル−2−ピロリドン、ガンマブチロラクトン、N,N−ジメチルホルムアミド、N,N−ジメチルアセトアミド、ジメチルスルホキシドなどの極性の非プロトン性溶媒、テトラヒドロフラン、ジオキサン、プロピレングリコールモノメチルエーテルなどのエーテル類、アセトン、メチルエチルケトン、ジイソブチルケトン、ジアセトンアルコールなどのケトン類、酢酸エチル、プロピレングリコールモノメチルエーテルアセテート、乳酸エチルなどのエステル類、トルエン、キシレンなどの芳香族炭化水素類などを単独、または2種以上使用することができる。 The positive photosensitive resin composition of the present invention contains a solvent as component (d). Examples of the solvent used in the present invention include polar aprotic solvents such as N-methyl-2-pyrrolidone, gamma butyrolactone, N, N-dimethylformamide, N, N-dimethylacetamide, dimethyl sulfoxide, tetrahydrofuran, dioxane, and propylene. Ethers such as glycol monomethyl ether, ketones such as acetone, methyl ethyl ketone, diisobutyl ketone and diacetone alcohol, esters such as ethyl acetate, propylene glycol monomethyl ether acetate and ethyl lactate, and aromatic hydrocarbons such as toluene and xylene Can be used alone or in combination of two or more.
本発明に用いられる溶剤の含有量は、成分(a)の樹脂100重量部に対して、好ましくは50重量部以上、より好ましくは100重量部以上であり、好ましくは2000重量部以下、より好ましくは1500重量部以下である。 The content of the solvent used in the present invention is preferably 50 parts by weight or more, more preferably 100 parts by weight or more, preferably 2000 parts by weight or less, more preferably 100 parts by weight of the resin of component (a). Is 1500 parts by weight or less.
さらに本発明のポジ型感光性樹脂組成物は、成分(c)とは別に、シリコンウエハ、ITO、SiO2などの下地基板との接着性をより高めるとともに、洗浄などに用いられる酸素プラズマ、UVオゾン処理に対する耐性を高めるために、トリメトキシアミノプロピルシラン、トリメトキシエポキシシラン、トリメトキシビニルシラン、トリメトキシチオールプロピルシランなどのシランカップリング剤、チタンキレート剤、アルミキレート剤、芳香族アミン化合物とアルコキシ基含有ケイ素化合物を反応させて得られる化合物などの接着改良剤を含有することができる。また、これらを含有する薬液で下地基板を前処理したりすることもできる。 In addition to the component (c), the positive photosensitive resin composition of the present invention further improves the adhesion to a base substrate such as a silicon wafer, ITO, SiO 2 , oxygen plasma used for cleaning, etc., UV Silane coupling agents such as trimethoxyaminopropyl silane, trimethoxy epoxy silane, trimethoxy vinyl silane, trimethoxy thiol propyl silane, titanium chelating agent, aluminum chelating agent, aromatic amine compound and alkoxy to increase resistance to ozone treatment An adhesion improving agent such as a compound obtained by reacting a group-containing silicon compound can be contained. In addition, the base substrate can be pretreated with a chemical solution containing these.
感光性樹脂組成物が接着改良剤を含有する場合、その含有量は成分(a)の樹脂100重量部に対し、0.5〜10重量部とすることが好ましい。接着改良剤を含有する薬液で基板を処理する場合、上記接着改良剤をイソプロパノール、エタノール、メタノール、水、テトラヒドロフラン、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノメチルエーテル、乳酸エチル、アジピン酸ジエチルなどの溶媒に0.5〜20重量%溶解させた溶液をスピンコート、スリットダイコート、バーコート、ディップコート、スプレーコート、蒸気処理などで表面処理をする。場合によっては、その後50℃から300℃までの温度をかけることで基板と上記接着改良剤との反応を進行させる。 When the photosensitive resin composition contains an adhesion improver, the content is preferably 0.5 to 10 parts by weight with respect to 100 parts by weight of the resin of component (a). When the substrate is treated with a chemical solution containing an adhesion improver, the adhesion improver is added to a solvent such as isopropanol, ethanol, methanol, water, tetrahydrofuran, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, ethyl lactate, or diethyl adipate. Surface treatment is performed by spin coating, slit die coating, bar coating, dip coating, spray coating, steam treatment, or the like for a solution in which 0.5 to 20% by weight is dissolved. In some cases, the reaction between the substrate and the adhesion improver is allowed to proceed by applying a temperature from 50 ° C. to 300 ° C.
本発明のポジ型感光性樹脂組成物は、熱処理後の膜の耐熱性、耐薬品性、機械特性などを高める目的で、熱架橋性化合物を含有してもよい。含有する場合、熱架橋性化合物としてアルコキシメチル基含有化合物などが挙げられ、その含有量は成分(a)の樹脂100重量部に対し0.5〜50重量部とすることが好ましい。さらに本発明の感光性樹脂組成物は、基板との塗れ性を向上させる目的で、界面活性剤を成分(a)の樹脂100重量部に対し0.01〜10重量部含有してもよい。 The positive photosensitive resin composition of the present invention may contain a thermally crosslinkable compound for the purpose of improving the heat resistance, chemical resistance, mechanical properties and the like of the film after heat treatment. When it contains, an alkoxymethyl group containing compound etc. are mentioned as a heat-crosslinkable compound, It is preferable that the content shall be 0.5-50 weight part with respect to 100 weight part of resin of a component (a). Furthermore, the photosensitive resin composition of this invention may contain 0.01-10 weight part of surfactant with respect to 100 weight part of resin of a component (a) in order to improve the wettability with a board | substrate.
次に、本発明のポジ型感光性樹脂組成物を用いて耐熱性樹脂パターンを製造する方法について説明する。 Next, a method for producing a heat-resistant resin pattern using the positive photosensitive resin composition of the present invention will be described.
まず、感光性樹脂組成物を基板上に塗布する。基板としては例えばシリコンウエハ、セラミックス類、ガリウムヒ素、ソーダ硝子、石英硝子などが用いられるが、これらに限定されない。塗布方法は例えばスリットダイコート法、スピンコート法、スプレーコート法、ロールコート法、バーコート法などの方法があり、これらの手法を組み合わせて塗布してもかまわない。 First, a photosensitive resin composition is applied on a substrate. Examples of the substrate include silicon wafers, ceramics, gallium arsenide, soda glass, and quartz glass, but are not limited thereto. Examples of the coating method include a slit die coating method, a spin coating method, a spray coating method, a roll coating method, and a bar coating method, and these methods may be used in combination.
次に、感光性樹脂組成物を塗布した基板を乾燥して、感光性樹脂組成物被膜を得る。乾燥はホットプレート、オーブン、赤外線、真空チャンバーなどを使用する。ホットプレートを用いる場合、プレート上に直接、もしくは、プレート上に設置したプロキシピン等の治具上に被加熱体を保持して加熱する。プロキシピンの材質としては、アルミニウムやステレンレス等の金属材料、あるいはポリイミド樹脂やテフロン(登録商標)等の合成樹脂があり、いずれの材質のプロキシピンを用いてもかまわない。プロキシピンの高さは、基板のサイズ、被加熱体である樹脂層の種類、加熱の目的等により様々であるが、例えば300mm×350mm×0.7mmのガラス基板上に塗布した樹脂層を加熱する場合、プロキシピンの高さは2〜12mm程度が好ましい。加熱温度は被加熱体の種類や目的により様々であり、室温から180℃の範囲で1分から数時間行うことが好ましい。 Next, the substrate coated with the photosensitive resin composition is dried to obtain a photosensitive resin composition film. For drying, a hot plate, an oven, an infrared ray, a vacuum chamber or the like is used. When a hot plate is used, the object to be heated is heated by holding it directly on the plate or on a jig such as a proxy pin installed on the plate. As a material of the proxy pin, there is a metal material such as aluminum or stellenless, or a synthetic resin such as polyimide resin or Teflon (registered trademark), and any proxy pin may be used. The height of the proxy pin varies depending on the size of the substrate, the type of the resin layer to be heated, the purpose of heating, etc. For example, the resin layer coated on a 300 mm × 350 mm × 0.7 mm glass substrate is heated. In this case, the height of the proxy pin is preferably about 2 to 12 mm. The heating temperature varies depending on the type and purpose of the object to be heated, and it is preferably performed in the range of room temperature to 180 ° C. for 1 minute to several hours.
次に、この感光性樹脂組成物被膜上に所望のパターンを有するマスクを通して化学線を照射し、露光する。露光に用いられる化学線としては紫外線、可視光線、電子線、X線などがあるが、本発明では水銀灯のi線(365nm)、h線(405nm)、g線(436nm)を用いることが好ましい。 Next, the photosensitive resin composition film is exposed to actinic radiation through a mask having a desired pattern. As the actinic radiation used for exposure, there are ultraviolet rays, visible rays, electron beams, X-rays and the like. In the present invention, it is preferable to use i rays (365 nm), h rays (405 nm), and g rays (436 nm) of a mercury lamp. .
感光性樹脂のパターンを形成するには、露光後、現像液を用いて露光部を除去すればよい。現像液としては、テトラメチルアンモニウムの水溶液、ジエタノールアミン、ジエチルアミノエタノール、水酸化ナトリウム、水酸化カリウム、炭酸ナトリウム、炭酸カリウム、トリエチルアミン、ジエチルアミン、メチルアミン、ジメチルアミン、酢酸ジメチルアミノエチル、ジメチルアミノエタノール、ジメチルアミノエチルメタクリレート、シクロヘキシルアミン、エチレンジアミン、ヘキサメチレンジアミンなどのアルカリ性を示す化合物の水溶液が好ましい。また場合によっては、これらのアルカリ水溶液にN−メチル−2−ピロリドン、N,N−ジメチルホルムアミド、N,N−ジメチルアセトアミド、ジメチルスルホキシド、ガンマブチロラクロン、ジメチルアクリルアミドなどの極性溶媒、メタノール、エタノール、イソプロパノールなどのアルコール類、乳酸エチル、プロピレングリコールモノメチルエーテルアセテートなどのエステル類、シクロペンタノン、シクロヘキサノン、イソブチルケトン、メチルイソブチルケトンなどのケトン類などを単独あるいは数種を組み合わせたものを含有してもよい。現像後は水にてリンス処理をする。ここでもエタノール、イソプロピルアルコールなどのアルコール類、乳酸エチル、プロピレングリコールモノメチルエーテルアセテートなどのエステル類などを水に加えてリンス処理をしてもよい。 In order to form the pattern of the photosensitive resin, the exposed portion may be removed using a developer after exposure. Developers include tetramethylammonium aqueous solution, diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethyl An aqueous solution of a compound showing alkalinity such as aminoethyl methacrylate, cyclohexylamine, ethylenediamine, hexamethylenediamine and the like is preferable. In some cases, polar aqueous solvents such as N-methyl-2-pyrrolidone, N, N-dimethylformamide, N, N-dimethylacetamide, dimethyl sulfoxide, gamma butyrolaclone, dimethylacrylamide, methanol, ethanol Contains alcohols such as isopropanol, esters such as ethyl lactate and propylene glycol monomethyl ether acetate, ketones such as cyclopentanone, cyclohexanone, isobutyl ketone, and methyl isobutyl ketone, alone or in combination. Also good. After development, rinse with water. Here, alcohols such as ethanol and isopropyl alcohol, and esters such as ethyl lactate and propylene glycol monomethyl ether acetate may be added to water for rinsing treatment.
現像後、130℃から400℃の温度を加えて耐熱性樹脂被膜に変換する。この加熱処理は温度を選び、段階的に昇温するか、ある温度範囲を選び連続的に昇温しながら5分から5時間実施する。一例としては、130℃、200℃、350℃で各30分ずつ熱処理する。あるいは室温より250℃まで2時間かけて、または400℃まで2時間かけて直線的に昇温するなどの方法が挙げられる。 After development, a temperature of 130 ° C. to 400 ° C. is applied to convert it to a heat resistant resin film. This heat treatment is carried out for 5 minutes to 5 hours by selecting the temperature and raising the temperature stepwise, or selecting a certain temperature range and continuously raising the temperature. As an example, heat treatment is performed at 130 ° C., 200 ° C., and 350 ° C. for 30 minutes each. Alternatively, a method of increasing the temperature linearly from room temperature to 250 ° C. over 2 hours or from 400 ° C. over 2 hours may be used.
本発明の感光性樹脂組成物により形成した樹脂被膜は、有機EL素子の絶縁層、TFT基板の平坦化膜、LSIなど半導体デバイスの表面保護膜、層間絶縁膜、デバイスをパッケージに封入する際の接着剤やアンダーフィル剤、銅のマイグレーションを防ぐキャップ剤、高密度実装用多層配線の層間絶縁膜、回路基板の配線保護膜、固体撮像素子のオンチップマイクロレンズや各種ディスプレイ・固体撮像素子用平坦化膜などの用途に好ましく用いることができる。 The resin film formed from the photosensitive resin composition of the present invention is used for insulating layers of organic EL elements, planarizing films of TFT substrates, surface protective films of semiconductor devices such as LSI, interlayer insulating films, and encapsulating devices in packages. Adhesive and underfill agent, cap agent to prevent copper migration, interlayer insulation film for multilayer wiring for high-density mounting, wiring protection film for circuit boards, on-chip microlens for solid-state image sensor, flat for various displays and solid-state image sensors It can use preferably for uses, such as a chemical film.
以下実施例等をあげて本発明を説明するが、本発明はこれらの例によって限定されるものではない。なお、実施例中の成分(c)の吸収極大波長の測定方法、接着性の評価、絶縁破壊電圧の測定およびPCT試験は以下の方法により行った。 Hereinafter, the present invention will be described with reference to examples and the like, but the present invention is not limited to these examples. In addition, the measuring method of the absorption maximum wavelength of the component (c) in an Example, adhesive evaluation, the measurement of a dielectric breakdown voltage, and the PCT test were done with the following method.
(1)成分(c)の吸収極大波長の測定
成分(c)をガンマブチロラクトンに溶解し、分光光度計MultiSpec−1500(島津製作所(株)製)を用いて測定した。
(1) Measurement of absorption maximum wavelength of component (c) The component (c) was dissolved in gamma butyrolactone and measured using a spectrophotometer MultiSpec-1500 (manufactured by Shimadzu Corporation).
(2)接着性の評価
プリベーク膜の作製
4インチシリコンウエハー上に、ポジ型感光性樹脂組成物(以下ワニスと呼ぶ)をプリベーク後の膜厚が0.48±0.02μmとなるように塗布し、ついでホットプレート D−SPIN(大日本スクリーン製造(株)製)を用いて、120℃で2分プリベークすることにより、プリベーク膜を得た。
(2) Adhesive Evaluation Preparation of Prebaked Film A positive photosensitive resin composition (hereinafter referred to as varnish) was applied on a 4-inch silicon wafer so that the film thickness after prebaking was 0.48 ± 0.02 μm. Then, using a hot plate D-SPIN (Dainippon Screen Mfg. Co., Ltd.), prebaking was performed at 120 ° C. for 2 minutes to obtain a prebaked film.
膜厚の測定
サーフコム 1400D(東京精密(株)製)により測定した。
Measurement of film thickness The thickness was measured with Surfcom 1400D (manufactured by Tokyo Seimitsu Co., Ltd.).
露光
露光機(キャノン(株)製、PLA−501F)を用い、ライン・アンド・スペースのパターン(ピッチは広い方から順に150、100、80、60、50、40、30、20、15、10、5μm)の切られたマスクをセットし、水銀灯の全波長で露光量50mJ/cm2(i線換算)の紫外線を照射した。ただし、実施例12のみ露光量100mJ/cm2(i線換算)とした。
Exposure Using an exposure machine (PLA-501F, manufactured by Canon Inc.), a line and space pattern (pitch is 150, 100, 80, 60, 50, 40, 30, 20, 15, 10 in order from the widest one) 5 μm) cut mask was set, and ultraviolet rays with an exposure amount of 50 mJ / cm 2 (i-line conversion) were irradiated at all wavelengths of the mercury lamp. However, only the exposure amount of Example 12 was set to 100 mJ / cm 2 (i-line conversion).
現像
自動現像装置AD−2000(滝沢産業(株)製)を用い、水酸化テトラメチルアンモニウム2.38%水溶液で30秒間パドル現像を行い、純水で30秒間リンスした。
Development Using an automatic developing device AD-2000 (manufactured by Takizawa Sangyo Co., Ltd.), paddle development was performed with a 2.38% aqueous solution of tetramethylammonium hydroxide for 30 seconds and rinsed with pure water for 30 seconds.
接着性の評価
現像後、基板に接着しているライン・アンド・スペースのパターンのうちで、最も狭いピッチ幅を記録した。
Evaluation of adhesion After development, the narrowest pitch width was recorded among the line-and-space patterns adhered to the substrate.
(3)絶縁破壊電圧の測定
キュア膜の作製
前記(2)のプリベーク膜の作製と同様にしてプリベーク膜をアルミ基板上に作製し、光洋サーモシステム(株)製イナートオーブンINH−21CDを用いて、実施例記載の加熱条件下、大気雰囲気中で熱処理を行った。
(3) Measurement of dielectric breakdown voltage Preparation of cured film A prebaked film was prepared on an aluminum substrate in the same manner as the preparation of the prebaked film in (2) above, and an inert oven INH-21CD manufactured by Koyo Thermo Systems Co., Ltd. was used. The heat treatment was performed in an air atmosphere under the heating conditions described in the examples.
絶縁破壊電圧の測定
アルミ基板上に作製したキュア膜を、菊水電子工業(株)製耐電圧/絶縁抵抗試験器TOS9201を使用して、DCWで昇圧速度0.1kV/4秒で昇圧し、絶縁破壊が起こったときの電圧を測定し、得られた電圧を膜厚で割ることにより、単位膜厚あたりの絶縁破壊電圧を求めた。
Measurement of dielectric breakdown voltage A cured film produced on an aluminum substrate was boosted with DCW at a boosting rate of 0.1 kV / 4 seconds using a withstand voltage / insulation resistance tester TOS9201 manufactured by Kikusui Electronics Co., Ltd. The voltage at which breakdown occurred was measured, and the obtained voltage was divided by the film thickness to determine the dielectric breakdown voltage per unit film thickness.
(4)PCT試験
キュア膜の作製
ガラス基板corning 1737(コーニング(株)製)上に、熱処理後の膜厚が0.48±0.02μmとなるようにプリベーク膜を作製し、光洋サーモシステム(株)製イナートオーブンINH−21CDを用いて、230℃で30分間、大気雰囲気中で熱処理を行った。
(4) PCT test Preparation of cured film A pre-baked film was prepared on a glass substrate corning 1737 (manufactured by Corning) so that the film thickness after heat treatment was 0.48 ± 0.02 μm, and Koyo Thermo System ( Heat treatment was performed in an air atmosphere at 230 ° C. for 30 minutes using an Inert Oven INH-21CD.
PCT処理
キュア膜に2mm間隔で10行10列(100マス)の碁盤目状の切り込みを入れ、ハストチャンバー EHS−211MD(エスペック(株)製)を用いて121℃、2気圧の飽和条件でプレッシャークッカーテスト(PCT)処理を行った。セロハンテープ(登録商標)による引き剥がしによって100マスのうち、1マス以上剥がれたPCT処理時間を測定した。
PCT treatment 10 rows and 10 columns (100 squares) grid cuts are cut into the cured film at intervals of 2 mm, and pressure is applied under a saturated condition of 121 ° C. and 2 atm using a hast chamber EHS-212MD (manufactured by ESPEC Corporation). Cooker test (PCT) treatment was performed. The PCT processing time in which one square or more out of 100 squares by peeling with cellophane tape (registered trademark) was measured.
合成例1 水酸基含有酸無水物(a)の合成
乾燥窒素気流下、2,2−ビス(3−アミノ−4−ヒドロキシフェニル)ヘキサフルオロプロパン(BAHF)18.3g(0.05モル)とアリルグリシジルエーテル34.2g(0.3モル)をガンマブチロラクトン100gに溶解させ、−15℃に冷却した。ここにガンマブチロラクトン50gに溶解させた無水トリメリット酸クロリド22.1g(0.11モル)を反応液の温度が0℃を越えないように滴下した。滴下終了後、0℃で4時間反応させた。この溶液をロータリーエバポレーターで濃縮して、トルエン1lに投入して下記式で表される水酸基含有酸無水物(a)を得た。
Synthesis Example 1 Synthesis of hydroxyl-containing acid anhydride (a) In a dry nitrogen stream, 18.3 g (0.05 mol) of 2,2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane (BAHF) and allyl 34.2 g (0.3 mol) of glycidyl ether was dissolved in 100 g of gamma butyrolactone and cooled to −15 ° C. To this, 22.1 g (0.11 mol) of trimellitic anhydride chloride dissolved in 50 g of gamma butyrolactone was added dropwise so that the temperature of the reaction solution did not exceed 0 ° C. After completion of dropping, the reaction was carried out at 0 ° C. for 4 hours. This solution was concentrated with a rotary evaporator and charged into 1 liter of toluene to obtain a hydroxyl group-containing acid anhydride (a) represented by the following formula.
合成例2 水酸基含有ジアミン化合物(b)の合成
2−アミノ−4−ニトロフェノール15.4g(0.1モル)をアセトン50ml、プロピレンオキシド30g(0.34モル)に溶解させ、−15℃に冷却した。ここに2,2ビス−(4−ベンゾイルクロリド)プロパン17.8g(0.055モル)をアセトン60mlに溶解させた溶液を徐々に滴下した。滴下終了後、−15℃で4時間反応させた。その後、室温に戻して生成している沈殿をろ過で集めた。
Synthesis Example 2 Synthesis of hydroxyl group-containing diamine compound (b) 2-Amino-4-nitrophenol (15.4 g, 0.1 mol) was dissolved in acetone (50 ml) and propylene oxide (30 g, 0.34 mol). Cooled down. A solution prepared by dissolving 17.8 g (0.055 mol) of 2,2bis- (4-benzoyl chloride) propane in 60 ml of acetone was gradually added dropwise thereto. After completion of dropping, the reaction was carried out at -15 ° C for 4 hours. Thereafter, the precipitate formed by returning to room temperature was collected by filtration.
この沈殿をガンマブチロラクトン200mlに溶解させて、5%パラジウム−炭素3gを加えて、激しく攪拌した。ここに水素ガスを入れた風船を取り付け、室温で水素ガスの風船がこれ以上縮まない状態になるまで攪拌を続け、さらに2時間水素ガスの風船を取り付けた状態で攪拌した。攪拌終了後、ろ過でパラジウム化合物を除き、溶液をロータリーエバポレーターで半量になるまで濃縮した。ここにエタノールを加えて、再結晶を行い、下記式で表される水酸基含有ジアミン化合物(b)の結晶を得た。 This precipitate was dissolved in 200 ml of gamma butyrolactone, 3 g of 5% palladium-carbon was added, and the mixture was vigorously stirred. A balloon filled with hydrogen gas was attached thereto, and stirring was continued until the balloon of hydrogen gas did not contract any further at room temperature, and further stirred for 2 hours with the balloon of hydrogen gas attached. After completion of the stirring, the palladium compound was removed by filtration, and the solution was concentrated to half by a rotary evaporator. Ethanol was added thereto and recrystallization was performed to obtain a hydroxyl group-containing diamine compound (b) crystal represented by the following formula.
合成例3 水酸基含有ジアミン化合物(c)の合成
BAHF18.3g(0.05モル)をアセトン100ml、プロピレンオキシド17.4g(0.3モル)に溶解させ、−15℃に冷却した。ここに4−ニトロベンゾイルクロリド20.4g(0.11モル)をアセトン100mlに溶解させた溶液を滴下した。滴下終了後、−15℃で4時間反応させ、その後室温に戻した。析出した白色固体をろ別し、50℃で真空乾燥した。
Synthesis Example 3 Synthesis of hydroxyl group-containing diamine compound (c) 18.3 g (0.05 mol) of BAHF was dissolved in 100 ml of acetone and 17.4 g (0.3 mol) of propylene oxide, and cooled to -15 ° C. A solution prepared by dissolving 20.4 g (0.11 mol) of 4-nitrobenzoyl chloride in 100 ml of acetone was added dropwise thereto. After completion of dropping, the mixture was reacted at −15 ° C. for 4 hours and then returned to room temperature. The precipitated white solid was filtered off and vacuum dried at 50 ° C.
固体30gを300mlのステンレスオートクレーブに入れ、メチルセルソルブ250mlに分散させ、5%パラジウム−炭素を2g加えた。ここに水素を風船で導入して、還元反応を室温で行った。約2時間後、風船がこれ以上しぼまないことを確認して反応を終了させた。反応終了後、ろ過して触媒であるパラジウム化合物を除き、ロータリーエバポレーターで濃縮し、下記式で表される水酸基含有ジアミン化合物(c)を得た。得られた固体をそのまま反応に使用した。 30 g of the solid was placed in a 300 ml stainless steel autoclave, dispersed in 250 ml of methyl cellosolve, and 2 g of 5% palladium-carbon was added. Hydrogen was introduced here with a balloon and the reduction reaction was carried out at room temperature. After about 2 hours, the reaction was terminated by confirming that the balloons did not squeeze any more. After completion of the reaction, the catalyst was filtered to remove the palladium compound as a catalyst, and the mixture was concentrated with a rotary evaporator to obtain a hydroxyl group-containing diamine compound (c) represented by the following formula. The obtained solid was used for the reaction as it was.
合成例4 水酸基含有ジアミン化合物(d)の合成
2−アミノ−4−ニトロフェノール15.4g(0.1モル)をアセトン100ml、プロピレンオキシド17.4g(0.3モル)に溶解させ、−15℃に冷却した。ここに4−ニトロベンゾイルクロリド20.4g(0.11モル)をアセトン100mlに溶解させた溶液を徐々に滴下した。滴下終了後、−15℃で4時間反応させた。その後、室温に戻して生成している沈殿をろ過で集めた。この後、合成例2と同様にして下記式で表される水酸基含有ジアミン化合物(d)の結晶を得た。
Synthesis Example 4 Synthesis of Hydroxyl-Containing Diamine Compound (d) 2-Amino-4-nitrophenol (15.4 g, 0.1 mol) was dissolved in acetone (100 ml) and propylene oxide (17.4 g, 0.3 mol). Cooled to ° C. A solution prepared by dissolving 20.4 g (0.11 mol) of 4-nitrobenzoyl chloride in 100 ml of acetone was gradually added dropwise thereto. After completion of dropping, the reaction was carried out at -15 ° C for 4 hours. Thereafter, the precipitate formed by returning to room temperature was collected by filtration. Thereafter, in the same manner as in Synthesis Example 2, a crystal of a hydroxyl group-containing diamine compound (d) represented by the following formula was obtained.
合成例5 キノンジアジド化合物(e)の合成
乾燥窒素気流下、TrisP−PA(商品名、本州化学工業(株)製)21.23g(0.05モル)と5−ナフトキノンジアジドスルホニル酸クロリド40.30g(0.15モル)を1,4−ジオキサン450gに溶解させ、室温にした。ここに、1,4−ジオキサン50gと混合させたトリエチルアミン12.65g(0.15モル)を系内が35℃以上にならないように滴下した。滴下後30℃で2時間攪拌した。トリエチルアミン塩をろ過し、ろ液を水に投入させた。その後、析出した沈殿をろ過で集めた。この沈殿を真空乾燥機で乾燥させ、下記式で表されるキノンジアジド化合物(e)を得た。
Synthesis Example 5 Synthesis of quinonediazide compound (e) Under a dry nitrogen stream, TrisP-PA (trade name, manufactured by Honshu Chemical Industry Co., Ltd.) 21.23 g (0.05 mol) and 5-naphthoquinonediazidesulfonyl acid chloride 40.30 g (0.15 mol) was dissolved in 450 g of 1,4-dioxane and brought to room temperature. Here, 12.65 g (0.15 mol) of triethylamine mixed with 50 g of 1,4-dioxane was added dropwise so that the temperature in the system would not be 35 ° C. or higher. It stirred at 30 degreeC after dripping for 2 hours. The triethylamine salt was filtered and the filtrate was poured into water. Thereafter, the deposited precipitate was collected by filtration. This precipitate was dried with a vacuum dryer to obtain a quinonediazide compound (e) represented by the following formula.
合成例6 キノンジアジド化合物(f)の合成
乾燥窒素気流下、TrisP−HAP(商品名、本州化学工業(株)製)15.41g(0.05モル)と5−ナフトキノンジアジドスルホニル酸クロリド20.15g(0.075モル)を1,4−ジオキサン450gに溶解させ、室温にした。ここに、1,4−ジオキサン50gと混合させたトリエチルアミン7.59g(0.075モル)を用い、合成例5と同様にしてキノンジアジド化合物(f)を得た。
Synthesis Example 6 Synthesis of quinonediazide compound (f) Under a dry nitrogen stream, 15.41 g (0.05 mol) of TrisP-HAP (trade name, manufactured by Honshu Chemical Industry Co., Ltd.) and 20.15 g of 5-naphthoquinonediazidesulfonyl acid chloride (0.075 mol) was dissolved in 450 g of 1,4-dioxane and brought to room temperature. A quinonediazide compound (f) was obtained in the same manner as in Synthesis Example 5 using 7.59 g (0.075 mol) of triethylamine mixed with 50 g of 1,4-dioxane.
合成例7 キノンジアジド化合物(g)の合成
乾燥窒素気流下、ビスフェノールA 11.41g(0.05モル)と4−ナフトキノンジアジドスルホニル酸クロリド26.87g(0.1モル)を1,4−ジオキサン450gに溶解させ、室温にした。ここに、1,4−ジオキサン50gと混合させたトリエチルアミン10.12gを用い、合成例5と同様にして下記式で表されるキノンジアジド化合物(g)を得た。
Synthesis Example 7 Synthesis of quinonediazide compound (g) Under a dry nitrogen stream, 11.41 g (0.05 mol) of bisphenol A and 26.87 g (0.1 mol) of 4-naphthoquinonediazidesulfonyl acid chloride were added to 450 g of 1,4-dioxane. And brought to room temperature. A quinonediazide compound (g) represented by the following formula was obtained in the same manner as in Synthesis Example 5 using 10.12 g of triethylamine mixed with 50 g of 1,4-dioxane.
合成例8 接着改良剤(h)の合成
36.6g(0.1モル)のBAHFを100gの乳酸エチルに溶解させた。ついでこの溶液に3−グリシドキシプロピルトリエトキシシラン55.6g(0.2モル、KBE−403、信越化学(株)製)を加え、50℃で6時間撹拌し、下記式で表される接着改良剤(h)を得た。
Synthesis Example 8 Synthesis of Adhesion Improving Agent (h) 36.6 g (0.1 mol) of BAHF was dissolved in 100 g of ethyl lactate. Next, 55.6 g (0.2 mol, KBE-403, manufactured by Shin-Etsu Chemical Co., Ltd.) of 3-glycidoxypropyltriethoxysilane was added to this solution, stirred at 50 ° C. for 6 hours, and represented by the following formula. An adhesion improver (h) was obtained.
合成例9 1−アセチルアミノアントラキノン(i)の合成
乾燥窒素気流下、1−アミノアントラキノン22.3g(0.1モル)、トリエチルアミン11.1g(0.11モル)をテトラヒドロフラン(THF)50gに溶解した。そこへアセチルクロライド7.85g(0.1モル)をTHF10gとともに、0℃で撹拌しながら5分間かけて滴下した。その後、室温にて1時間攪拌させた。沈殿物をろ過により除去し、ろ液を200gの水に投入した。生成物をろ過で回収後、真空乾燥機にて乾燥させ1−アセチルアミノアントラキノン(i)を得た。
Synthesis Example 9 Synthesis of 1-acetylaminoanthraquinone (i) In a dry nitrogen stream, 22.3 g (0.1 mol) of 1-aminoanthraquinone and 11.1 g (0.11 mol) of triethylamine were dissolved in 50 g of tetrahydrofuran (THF). did. Acetyl chloride 7.85g (0.1mol) was dripped there over 5 minutes, stirring at 0 degreeC with 10g of THF. Thereafter, the mixture was stirred at room temperature for 1 hour. The precipitate was removed by filtration, and the filtrate was poured into 200 g of water. The product was recovered by filtration and then dried in a vacuum dryer to obtain 1-acetylaminoanthraquinone (i).
合成例10 ポリマー(A)の合成
乾燥窒素気流下、合成例1で得られた水酸基含有酸無水物(a)12.01g(0.02モル)をN−メチル−2−ピロリドン(NMP)100gに溶解させた。ここに合成例2で得られた水酸基含有ジアミン(b)9.6g(0.016モル)をNMP25gとともに加えて、20℃で1時間反応させ、次いで50℃で2時間反応させた。次に4−アミノフェノール0.87g(0.008モル)を加え50℃で2時間反応させた。その後、N,N−ジメチルホルムアミドジメチルアセタール7.15g(0.06モル)をNMP10gで希釈した溶液を10分かけて滴下した。滴下後、50℃で3時間攪拌した。反応終了後、溶液を水1lに投入して、ポリマー固体の沈殿をろ過で集めた。ポリマー固体を80℃の真空乾燥機で40時間乾燥した。こうしてポリマー(A)(ポリアミド酸エステル)を得た。
Synthesis Example 10 Synthesis of Polymer (A) Under a dry nitrogen stream, 12.01 g (0.02 mol) of the hydroxyl group-containing acid anhydride (a) obtained in Synthesis Example 1 was added to 100 g of N-methyl-2-pyrrolidone (NMP). Dissolved in. To this was added 9.6 g (0.016 mol) of the hydroxyl group-containing diamine (b) obtained in Synthesis Example 2 together with 25 g of NMP, and the mixture was reacted at 20 ° C. for 1 hour and then at 50 ° C. for 2 hours. Next, 0.87 g (0.008 mol) of 4-aminophenol was added and reacted at 50 ° C. for 2 hours. Thereafter, a solution obtained by diluting 7.15 g (0.06 mol) of N, N-dimethylformamide dimethylacetal with 10 g of NMP was added dropwise over 10 minutes. After dropping, the mixture was stirred at 50 ° C. for 3 hours. After completion of the reaction, the solution was poured into 1 liter of water, and a polymer solid precipitate was collected by filtration. The polymer solid was dried in a vacuum dryer at 80 ° C. for 40 hours. Thus, polymer (A) (polyamic acid ester) was obtained.
合成例11 ポリマー(B)の合成
乾燥窒素気流下、合成例1で得られた水酸基含有酸無水物(a)12.01g(0.02モル)をNMP100gに溶解させた。ここに合成例3で得られた水酸基含有ジアミン(c)4.84g(0.008モル)と合成例4で得られた水酸基含有ジアミン(d)1.94g(0.008モル)をNMP25gとともに加えて、20℃で1時間反応させ、次いで50℃で2時間反応させた。次に4−エチニルアニリン0.94g(0.008モル)を加え50℃で2時間反応させた。その後、N,N−ジメチルホルムアミドジメチルアセタール7.15g(0.06モル)をNMP5gで希釈した溶液を10分かけて滴下した。滴下後、50℃で3時間攪拌した。反応終了後、溶液を水1lに投入して、ポリマー固体の沈殿をろ過で集めた。ポリマー固体を80℃の真空乾燥機で40時間乾燥した。こうしてポリマー(B)(ポリアミド酸エステル)を得た。
Synthesis Example 11 Synthesis of Polymer (B) Under a dry nitrogen stream, 12.01 g (0.02 mol) of the hydroxyl group-containing acid anhydride (a) obtained in Synthesis Example 1 was dissolved in 100 g of NMP. Here, 4.84 g (0.008 mol) of the hydroxyl group-containing diamine (c) obtained in Synthesis Example 3 and 1.94 g (0.008 mol) of the hydroxyl group-containing diamine (d) obtained in Synthesis Example 4 together with 25 g of NMP. In addition, it was reacted at 20 ° C. for 1 hour and then at 50 ° C. for 2 hours. Next, 0.94 g (0.008 mol) of 4-ethynylaniline was added and reacted at 50 ° C. for 2 hours. Thereafter, a solution obtained by diluting 7.15 g (0.06 mol) of N, N-dimethylformamide dimethylacetal with 5 g of NMP was added dropwise over 10 minutes. After dropping, the mixture was stirred at 50 ° C. for 3 hours. After completion of the reaction, the solution was poured into 1 liter of water, and a polymer solid precipitate was collected by filtration. The polymer solid was dried in a vacuum dryer at 80 ° C. for 40 hours. Thus, polymer (B) (polyamic acid ester) was obtained.
合成例12 ポリマー(C)の合成
乾燥窒素気流下、4,4’−ジアミノジフェニルエーテル10.89g(0.054モル)、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン1.86g(0.0075モル)をNMP20gに溶解させた。ここに合成例1で得られた水酸基含有酸二無水物(a)30.02g(0.05モル)をNMP15gとともに加えて、20℃で1時間反応させ、次いで50℃で2時間反応させた。反応後、末端封止剤として無水マレイン酸2.25g(0.023モル)を加えさらに50℃で2時間反応させた。その後、N,N−ジメチルホルムアミドジメチルアセタール15.19g(0.127モル)をNMP4gで希釈した溶液を10分かけて滴下した。滴下後、50℃で3時間攪拌した。反応終了後、溶液を水1lに投入して、ポリマー固体の沈殿をろ過で集めた。ポリマー固体を70℃の真空乾燥機で60時間乾燥した。こうしてポリマー(C)(ポリアミド酸エステル)を得た。
Synthesis Example 12 Synthesis of Polymer (C) Under a dry nitrogen stream, 10.89 g (0.054 mol) of 4,4′-diaminodiphenyl ether, 1.86 g of 1,3-bis (3-aminopropyl) tetramethyldisiloxane ( 0.0075 mol) was dissolved in 20 g of NMP. Here, 30.02 g (0.05 mol) of the hydroxyl group-containing acid dianhydride (a) obtained in Synthesis Example 1 was added together with 15 g of NMP, reacted at 20 ° C. for 1 hour, and then reacted at 50 ° C. for 2 hours. . After the reaction, 2.25 g (0.023 mol) of maleic anhydride was added as a terminal blocking agent, and the mixture was further reacted at 50 ° C. for 2 hours. Thereafter, a solution obtained by diluting 15.19 g (0.127 mol) of N, N-dimethylformamide dimethylacetal with 4 g of NMP was added dropwise over 10 minutes. After dropping, the mixture was stirred at 50 ° C. for 3 hours. After completion of the reaction, the solution was poured into 1 liter of water, and a polymer solid precipitate was collected by filtration. The polymer solid was dried in a vacuum dryer at 70 ° C. for 60 hours. Thus, polymer (C) (polyamic acid ester) was obtained.
合成例13 ポリマー(D)の合成
乾燥窒素気流下、BAHF18.68g(0.100モル)、ピリジン12.66g(0.420モル)をNMP50gに溶解させた。ここに、テレフタル酸クロリド22.32(0.095モル)をNMP10gとともに、系内が10℃以上にならないように滴下した。滴下後、室温で4時間攪拌した。反応終了後、溶液を水2lに投入して、ポリマー固体の沈殿をろ過で集めた。ポリマー固体を80℃の真空乾燥機で20時間乾燥した。こうしてポリマー(D)(ポリヒドロキシアミド)を得た。
Synthesis Example 13 Synthesis of Polymer (D) Under a dry nitrogen stream, 18.68 g (0.100 mol) of BAHF and 12.66 g (0.420 mol) of pyridine were dissolved in 50 g of NMP. Here, 22.32 (0.095 mol) of terephthalic acid chloride was added dropwise together with 10 g of NMP so that the inside of the system would not become 10 ° C. or higher. After dropping, the mixture was stirred at room temperature for 4 hours. After completion of the reaction, the solution was poured into 2 liters of water, and the polymer solid precipitate was collected by filtration. The polymer solid was dried in a vacuum dryer at 80 ° C. for 20 hours. Thus, polymer (D) (polyhydroxyamide) was obtained.
合成例14 ポリマー(E)の合成
乾燥窒素気流下、BAHF32.9g(0.09モル)をNMP500gに溶解させた。ここにビス(3,4−ジカルボキシフェニル)エーテル二無水物31.0g(0.1モル、マナック(株)製)をNMP50gとともに加えて、30℃で2時間攪拌した。その後、3−アミノフェノール2.18g(0.02モル、東京化成(株)製)を加え、40℃で2時間攪拌を続けた。さらにピリジン5g(東京化成(株)製)をトルエン30g(東京化成(株)製)に希釈して、溶液に加え、冷却管を付け系外に水をトルエンとともに共沸で除去しながら溶液の温度を120℃にして2時間、さらに180℃で2時間反応させた。この溶液の温度が室温にまで低下したら、水3Lに溶液を投入し、白色の粉体を得た。この粉体をろ過で集め、さらに水で3回洗浄を行った。洗浄後、白色粉体を50℃の真空乾燥機で72時間乾燥させた。こうしてポリマー(E)(ポリイミド)を得た。
Synthesis Example 14 Synthesis of Polymer (E) Under a nitrogen stream, 32.9 g (0.09 mol) of BAHF was dissolved in 500 g of NMP. Bis (3,4-dicarboxyphenyl) ether dianhydride 31.0 g (0.1 mol, Manac Co., Ltd.) was added thereto together with 50 g of NMP, and the mixture was stirred at 30 ° C. for 2 hours. Thereafter, 2.18 g of 3-aminophenol (0.02 mol, manufactured by Tokyo Chemical Industry Co., Ltd.) was added, and stirring was continued at 40 ° C. for 2 hours. Further, 5 g of pyridine (manufactured by Tokyo Chemical Industry Co., Ltd.) was diluted with 30 g of toluene (manufactured by Tokyo Chemical Industry Co., Ltd.), added to the solution, a cooling tube was attached and water was removed azeotropically with toluene while azeotropically removing the solution. The reaction was carried out at 120 ° C. for 2 hours and further at 180 ° C. for 2 hours. When the temperature of this solution dropped to room temperature, the solution was poured into 3 L of water to obtain a white powder. The powder was collected by filtration and further washed with water three times. After washing, the white powder was dried with a vacuum dryer at 50 ° C. for 72 hours. Thus, polymer (E) (polyimide) was obtained.
合成例15 ポリマー(F)の合成
乾燥窒素気流下、ピロメリット酸無水物21.8g(0.1モル)、2−ニトロベンジルアルコール15.3g(0.21モル)をNMP200gに溶解し、撹拌しながらトリエチルアミン21.3g(0.21モル)を30分間かけて滴下した。滴下終了後、3時間反応させ、2,6−(4,4’−ジアミノジフェニル)−ベンゾ[1,2−d:5,4−d´]ビスオキサゾール34.2g(0.1モル)を加えた。次にジフェニル−[2−チオキソ−1,3−ベンゾオキサゾール−3(2H)−イル]ホスホナート70.4g(0.21モル)を5回に分けて添加し、5時間反応させた。また、これとは別に乾燥窒素気流下、無水マレイン酸19.6g(0.2モル)と2−ニトロベンジルアルコール15.3g(0.21モル)をNMP100gに溶解し、撹拌しながらトリエチルアミン21.3g(0.21モル)を30分間かけて滴下した。滴下終了後3時間反応させ、前の反応液と混合し30分間撹拌した。次にジフェニル−[2−チオキソ−1,3−ベンゾオキサゾール−3(2H)−イル]ホスホナート70.4g(0.21モル)を5回に分けて添加し、5時間反応させた。反応液をメタノール2L中に投入後、沈殿物をろ過にて回収し、50℃の真空乾燥機で72時間乾燥させた。こうしてポリマー(F)(ポリアミド酸エステル)を得た。
Synthesis Example 15 Synthesis of Polymer (F) In a dry nitrogen stream, 21.8 g (0.1 mol) of pyromellitic anhydride and 15.3 g (0.21 mol) of 2-nitrobenzyl alcohol were dissolved in 200 g of NMP and stirred. Then, 21.3 g (0.21 mol) of triethylamine was added dropwise over 30 minutes. After the completion of the dropwise addition, the mixture was reacted for 3 hours to obtain 34.2 g (0.1 mol) of 2,6- (4,4′-diaminodiphenyl) -benzo [1,2-d: 5,4-d ′] bisoxazole. added. Next, 70.4 g (0.21 mol) of diphenyl- [2-thioxo-1,3-benzoxazol-3 (2H) -yl] phosphonate was added in 5 portions and allowed to react for 5 hours. Separately, 19.6 g (0.2 mol) of maleic anhydride and 15.3 g (0.21 mol) of 2-nitrobenzyl alcohol were dissolved in 100 g of NMP under a dry nitrogen stream, and triethylamine 21. 3 g (0.21 mol) was added dropwise over 30 minutes. After completion of the dropwise addition, the reaction was allowed to proceed for 3 hours, mixed with the previous reaction solution and stirred for 30 minutes. Next, 70.4 g (0.21 mol) of diphenyl- [2-thioxo-1,3-benzoxazol-3 (2H) -yl] phosphonate was added in 5 portions and allowed to react for 5 hours. After putting the reaction liquid into 2 L of methanol, the precipitate was collected by filtration and dried in a vacuum dryer at 50 ° C. for 72 hours. Thus, polymer (F) (polyamic acid ester) was obtained.
実施例1
合成例10で合成したポリマー(A)6.48g、キノンジアジド化合物(e)1.85g、成分(c)としてBONASORB UA−3912(商品名、インドール化合物、オリエント化学(株)製、吸収極大波長391nm)0.37g、ポリヒドロキシ化合物としてTrisP−PA 1.30gをガンマブチロラクトン27.0g、乳酸エチル27.0g、プロピレングリコールモノメチルエーテル36.0gに溶解し、ワニス(A)とした。ワニス(A)を用いて、接着性の評価、キュア膜の絶縁破壊電圧の測定およびPCT試験を行った。なお、絶縁破壊電圧の測定に用いたキュア膜の熱処理条件は230℃で30分間とした。
Example 1
6.48 g of polymer (A) synthesized in Synthesis Example 10, 1.85 g of quinonediazide compound (e), BONASORB UA-3912 (trade name, indole compound, manufactured by Orient Chemical Co., Ltd., absorption maximum wavelength 391 nm as component (c) ) 0.37 g, 1.30 g of TrisP-PA as a polyhydroxy compound was dissolved in 27.0 g of gamma butyrolactone, 27.0 g of ethyl lactate, and 36.0 g of propylene glycol monomethyl ether to obtain a varnish (A). Using the varnish (A), adhesion evaluation, measurement of dielectric breakdown voltage of the cured film, and PCT test were performed. The heat treatment conditions for the cured film used for measuring the dielectric breakdown voltage were set at 230 ° C. for 30 minutes.
実施例2
合成例11で合成したポリマー(B)7.78g、キノンジアジド化合物(f)1.78g、BONASORB UA−3912 0.44gをガンマブチロラクトン27.0g、乳酸エチル27.0g、プロピレングリコールモノメチルエーテル36.0gに溶解し、ワニス(B)とした。ワニス(B)を用いて実施例1と同様にして接着性の評価、絶縁破壊電圧の測定およびPCT試験を行った。
Example 2
7.78 g of the polymer (B) synthesized in Synthesis Example 11, 1.78 g of the quinonediazide compound (f), 0.44 g of BONASORB UA-3912, 27.0 g of gamma butyrolactone, 27.0 g of ethyl lactate, 36.0 g of propylene glycol monomethyl ether To give varnish (B). Using the varnish (B), evaluation of adhesiveness, measurement of dielectric breakdown voltage and PCT test were conducted in the same manner as in Example 1.
実施例3
合成例12で合成したポリマー(C)7.78g、キノンジアジド化合物(g)1.78g、BONASORB UA−3912 0.44gをガンマブチロラクトン27.0g、乳酸エチル27.0g、プロピレングリコールモノメチルエーテル36.0gに溶解し、ワニス(C)とした。ワニス(C)を用いて実施例1と同様にして接着性の評価、絶縁破壊電圧の測定およびPCT試験を行った。
Example 3
7.78 g of polymer (C) synthesized in Synthesis Example 12, 1.78 g of quinonediazide compound (g), 0.44 g of BONASORB UA-3912, 27.0 g of gamma butyrolactone, 27.0 g of ethyl lactate, 36.0 g of propylene glycol monomethyl ether To give varnish (C). Using the varnish (C), in the same manner as in Example 1, evaluation of adhesiveness, measurement of dielectric breakdown voltage, and PCT test were performed.
実施例4
合成例13で合成したポリマー(D)6.86g、キノンジアジド化合物(e)1.57g、BONASORB UA−3912 0.20g、ポリヒドロキシ化合物としてTrisP−PA 1.37gをガンマブチロラクトン27.0g、乳酸エチル27.0g、プロピレングリコールモノメチルエーテル36.0gに溶解し、ワニス(D)とした。ワニス(D)を用いて、接着性の評価、キュア膜の絶縁破壊電圧の測定およびPCT試験を行った。なお、絶縁破壊電圧の測定に用いたキュア膜の熱処理条件は320℃で30分間とした。
Example 4
6.86 g of polymer (D) synthesized in Synthesis Example 13, 1.57 g of quinonediazide compound (e), 0.20 g of BONASORB UA-3912, 1.37 g of TrisP-PA as a polyhydroxy compound, 27.0 g of gamma butyrolactone, ethyl lactate It was dissolved in 27.0 g and 36.0 g of propylene glycol monomethyl ether to obtain varnish (D). Using the varnish (D), adhesion evaluation, measurement of the dielectric breakdown voltage of the cured film, and PCT test were performed. In addition, the heat treatment conditions of the cured film used for the measurement of the dielectric breakdown voltage were set at 320 ° C. for 30 minutes.
実施例5
合成例14で合成したポリマー(E)7.22g、キノンジアジド化合物(e)1.24g、BONASORB UA−3912 0.10g、ポリヒドロキシ化合物TrisP−PA 1.44gをガンマブチロラクトン27.0g、乳酸エチル27.0g、プロピレングリコールモノメチルエーテル36.0gに溶解し、ワニス(E)とした。ワニス(E)を用いて実施例1と同様にして接着性の評価、絶縁破壊電圧の測定およびPCT試験を行った。
Example 5
7.22 g of the polymer (E) synthesized in Synthesis Example 14, 1.24 g of the quinonediazide compound (e), 0.10 g of BONASORB UA-3912, 1.44 g of the polyhydroxy compound TrisP-PA, 27.0 g of gamma-butyrolactone, 27 of ethyl lactate Dissolved in 0.06 g and 36.0 g of propylene glycol monomethyl ether to give varnish (E). Evaluation of adhesiveness, measurement of dielectric breakdown voltage, and PCT test were performed in the same manner as in Example 1 using varnish (E).
実施例6
成分(c)として5−ニトロアセナフテン(東京化成(株)製、吸収極大波長371nm)0.37gを用いたこと以外は、実施例1と同様にしてワニス(F)を作製し、接着性の評価、絶縁破壊電圧の測定およびPCT試験を行った。
Example 6
A varnish (F) was prepared in the same manner as in Example 1 except that 0.37 g of 5-nitroacenaphthene (manufactured by Tokyo Chemical Industry Co., Ltd., absorption maximum wavelength 371 nm) was used as the component (c). Evaluation, dielectric breakdown voltage measurement, and PCT test.
実施例7
成分(c)として合成例9で合成した1−アセチルアミノアントラキノン(i)(吸収極大波長400nm)0.37gを用いたこと以外は、実施例1と同様にしてワニス(G)を作製し、接着性の評価、絶縁破壊電圧の測定およびPCT試験を行った。
Example 7
A varnish (G) was produced in the same manner as in Example 1 except that 0.37 g of 1-acetylaminoanthraquinone (i) (absorption maximum wavelength 400 nm) synthesized in Synthesis Example 9 was used as the component (c). Evaluation of adhesion, measurement of dielectric breakdown voltage, and PCT test were performed.
実施例8
成分(c)としてNK−1342(商品名、2−(4−ジメチルアミノスチリル)ベンゾオキサゾール、林原生物化学研究所(株)製、吸収極大波長394nm)0.19gを用いたこと以外は、実施例1と同様にしてワニス(H)を作製し、接着性の評価、絶縁破壊電圧の測定およびPCT試験を行った。
Example 8
Implemented except that 0.19 g of NK-1342 (trade name, 2- (4-dimethylaminostyryl) benzoxazole, Hayashibara Biochemical Laboratories, Inc., absorption maximum wavelength 394 nm) was used as component (c). A varnish (H) was produced in the same manner as in Example 1, and adhesion evaluation, dielectric breakdown voltage measurement, and PCT test were performed.
実施例9
成分(c)としてNK−1886(商品名、2−[2−[4−(ジメチルアミノ)フェニル]エテニル]ナフト[1,2−d]チアゾール、林原生物化学研究所(株)製、吸収極大波長416nm)0.19gを用いたこと以外は、実施例1と同様にしてワニス(I)を作製し、接着性の評価絶縁破壊電圧の測定およびPCT試験を行った。
Example 9
As component (c), NK-1886 (trade name, 2- [2- [4- (dimethylamino) phenyl] ethenyl] naphtho [1,2-d] thiazole, manufactured by Hayashibara Biochemical Laboratories, Inc., absorption maximum A varnish (I) was produced in the same manner as in Example 1 except that 0.19 g (wavelength 416 nm) was used, and an adhesion evaluation dielectric breakdown voltage measurement and a PCT test were performed.
実施例10
成分(c)として1,3−ジメチル−5−[2−(1−メチルピロリジン−2−イリデン)エチリデン]ピリミジン−2,4,6−トリオン(メロシアニン化合物、日本シイベルヘグナー(株)製、吸収極大波長404nm)0.37gを用いたこと以外は、実施例1と同様にしてワニス(J)を作製し、接着性の評価、絶縁破壊電圧の測定およびPCT試験を行った。
Example 10
1,3-dimethyl-5- [2- (1-methylpyrrolidin-2-ylidene) ethylidene] pyrimidine-2,4,6-trione (merocyanine compound, manufactured by Nippon Siebel Hegner Co., Ltd.) as component (c), absorption maximum A varnish (J) was prepared in the same manner as in Example 1 except that 0.37 g (wavelength 404 nm) was used, and adhesion evaluation, dielectric breakdown voltage measurement, and PCT test were performed.
実施例11
成分(c)として5−ニトロアセナフテン0.74gを用いたこと以外は、実施例1と同様にしてワニス(K)を作製し、接着性の評価、絶縁破壊電圧の測定およびPCT試験を行った。
Example 11
A varnish (K) was prepared in the same manner as in Example 1 except that 0.74 g of 5-nitroacenaphthene was used as the component (c), and adhesion evaluation, dielectric breakdown voltage measurement, and PCT test were performed. It was.
実施例12
露光量を50mJ/cm2から100mJ/cm2に増加させたこと以外は、実施例10と同様にワニス(K)の接着性の評価、絶縁破壊電圧の測定およびPCT試験を行った。
Example 12
Except that the exposure dose was increased from 50 mJ / cm 2 to 100 mJ / cm 2 , evaluation of adhesiveness of varnish (K), measurement of dielectric breakdown voltage, and PCT test were performed in the same manner as in Example 10.
実施例13
成分(c)として5−ニトロアセナフテン0.04gを用いたこと以外は、実施例1と同様にしてワニス(L)を作製し、接着性の評価、絶縁破壊電圧の測定およびPCT試験を行った。
Example 13
A varnish (L) was prepared in the same manner as in Example 1 except that 0.04 g of 5-nitroacenaphthene was used as the component (c), and adhesion evaluation, dielectric breakdown voltage measurement, and PCT test were performed. It was.
実施例14
成分(c)として5−ニトロアセナフテン 0.02gを用いたこと以外は、実施例10と同様にしてワニス(M)を作製し、接着性の評価、絶縁破壊電圧の測定およびPCT試験を行った。
Example 14
A varnish (M) was prepared in the same manner as in Example 10 except that 0.02 g of 5-nitroacenaphthene was used as the component (c), and adhesion evaluation, dielectric breakdown voltage measurement, and PCT test were performed. It was.
実施例15
実施例6で作製したワニス(F)に、合成例8で合成した接着改良剤(h)を0.10g添加してワニス(N)とした。ワニス(N)を用いて実施例1と同様にして接着性の評価、絶縁破壊電圧の測定およびPCT試験を行った。
Example 15
To the varnish (F) produced in Example 6, 0.10 g of the adhesion improver (h) synthesized in Synthesis Example 8 was added to obtain a varnish (N). Evaluation of adhesiveness, measurement of dielectric breakdown voltage, and PCT test were performed in the same manner as in Example 1 using varnish (N).
比較例1
成分(c)を用いないこと以外は、実施例1と同様にしてワニス(A’)を作製し、接着性の評価および絶縁破壊電圧の測定を行った。
Comparative Example 1
A varnish (A ′) was produced in the same manner as in Example 1 except that the component (c) was not used, and adhesion evaluation and dielectric breakdown voltage were measured.
比較例2
成分(c)の代わりに紫外線吸収剤CHIMASSORB 81(商品名、チバ・ケミカルティ・スペシャルズ(株)製、吸収極大波長288,325nm)0.37gを用いたこと以外は、実施例1と同様にしてワニス(B’)を作製し、接着性の評価および絶縁破壊電圧の測定を行った。
Comparative Example 2
Except for using 0.37 g of an ultraviolet absorber CHIMASSORB 81 (trade name, manufactured by Ciba Chemicalty Specials, Inc., absorption maximum wavelength 288, 325 nm) instead of component (c), the same as in Example 1 Then, a varnish (B ′) was prepared, and adhesion evaluation and dielectric breakdown voltage were measured.
比較例3
成分(c)の代わりに紫外線吸収剤TINUVIN 1130(商品名、チバ・ケミカルティ・スペシャルズ(株)製、吸収極大波長301,340nm)0.37gを用いたこと以外は、実施例1と同様にしてワニス(C’)を作製し、接着性の評価および絶縁破壊電圧の測定を行った。
Comparative Example 3
Except for using 0.37 g of the ultraviolet absorber TINUVIN 1130 (trade name, manufactured by Ciba Chemicalty Specials Co., Ltd., absorption maximum wavelength 301, 340 nm) instead of the component (c), the same as in Example 1. Then, a varnish (C ′) was prepared, and adhesion evaluation and dielectric breakdown voltage were measured.
比較例4
成分(c)の代わりに染料VALIFAST BLACK 3830(商品名、オリエント化学(株)製、吸収極大波長378,579nm)0.37gを用いたこと以外は、実施例1と同様にしてワニス(D’)を作製し、接着性の評価および絶縁破壊電圧の測定を行った。
Comparative Example 4
Varnish (D ′) in the same manner as in Example 1 except that 0.37 g of the dye VALIFAST BLACK 3830 (trade name, manufactured by Orient Chemical Co., Ltd., absorption maximum wavelength 378,579 nm) was used instead of component (c). ), And evaluation of adhesion and measurement of dielectric breakdown voltage were performed.
比較例5
成分(c)の代わりに染料VALIFAST BLUE 2620(商品名、オリエント化学(株)製、吸収極大波長346,673nm)0.37gを用いたこと以外は、実施例1と同様にしてワニス(E’)を作製し、接着性の評価および絶縁破壊電圧の測定を行った。
Comparative Example 5
Varnish (E ′) in the same manner as in Example 1 except that 0.37 g of the dye VALIFAST BLUE 2620 (trade name, manufactured by Orient Chemical Co., Ltd., absorption maximum wavelength 346,673 nm) was used instead of the component (c). ), And evaluation of adhesion and measurement of dielectric breakdown voltage were performed.
比較例6
成分(c)の代わりに染料VALIFAST RED 3320(商品名、オリエント化学(株)製、吸収極大波長504nm)0.37gを用いたこと以外は、実施例1と同様にしてワニス(F’)を作製し、接着性の評価および絶縁破壊電圧の測定を行った。
Comparative Example 6
Varnish (F ′) was prepared in the same manner as in Example 1 except that 0.37 g of the dye VALIFAST RED 3320 (trade name, manufactured by Orient Chemical Co., Ltd., absorption maximum wavelength 504 nm) was used instead of component (c). It produced and evaluated adhesiveness and measured the dielectric breakdown voltage.
比較例7
成分(c)の代わりに染料VALIFAST GREEN 2520(商品名、オリエント化学(株)製、吸収極大波長346,673nm)0.37gを用いたこと以外は、実施例1と同様にしてワニス(G’)を作製し、接着性の評価および絶縁破壊電圧の測定を行った。
Comparative Example 7
Varnish (G ′) in the same manner as in Example 1 except that 0.37 g of the dye VALIFAST GREEN 2520 (trade name, manufactured by Orient Chemical Co., Ltd., absorption maximum wavelength 346, 673 nm) was used instead of component (c). ), And evaluation of adhesion and measurement of dielectric breakdown voltage were performed.
比較例8
合成例10で合成したポリマー(A)6.48g、キノンジアジド化合物(e)1.85g、ピグメントブルー 15:6(東洋インキ(株)製、吸収極大波長670nm)0.37g、ポリヒドロキシ化合物としてTrisP−PA 1.30g、ガンマブチロラクトン27.0g、乳酸エチル27.0g、プロピレングリコールモノメチルエーテル36.0gをガラスビーズ25gとともにホモジナイザーを用いて、7000rpmで30分間分散処理後、ガラスビーズを濾過により除去し、ワニス(H’)を得た。ワニス(H’)を用いて実施例1と同様にして、接着性の評価および絶縁破壊電圧の測定を行った。
Comparative Example 8
6.48 g of polymer (A) synthesized in Synthesis Example 10, 1.85 g of quinonediazide compound (e), 0.37 g of Pigment Blue 15: 6 (manufactured by Toyo Ink Co., Ltd., absorption maximum wavelength 670 nm), TrisP as a polyhydroxy compound -Disperse 1.30 g of PA, 27.0 g of gamma butyrolactone, 27.0 g of ethyl lactate, 36.0 g of propylene glycol monomethyl ether together with 25 g of glass beads using a homogenizer at 7000 rpm for 30 minutes, and then remove the glass beads by filtration. A varnish (H ′) was obtained. Using the varnish (H ′), in the same manner as in Example 1, evaluation of adhesiveness and measurement of dielectric breakdown voltage were performed.
比較例9
合成例10で合成したポリマー(A)6.48g、キノンジアジド化合物(e)1.85g、チタンブラック 13M(商品名、ジェムコ(株)製)0.37g、ポリヒドロキシ化合物としてTrisP−PA 1.30g、ガンマブチロラクトン27.0g、乳酸エチル27.0g、プロピレングリコールモノメチルエーテル36.0gをガラスビーズ25gとともにホモジナイザーを用いて、7000rpmで30分間分散処理後、ガラスビーズを濾過により除去し、ワニス(I’)を得た。ワニス(I’)を用いて実施例1と同様にして、接着性の評価および絶縁破壊電圧の測定を行った。
Comparative Example 9
6.48 g of polymer (A) synthesized in Synthesis Example 10, 1.85 g of quinonediazide compound (e), 0.37 g of titanium black 13M (trade name, manufactured by Gemco Co., Ltd.), 1.30 g of TrisP-PA as a polyhydroxy compound , 27.0 g of gamma butyrolactone, 27.0 g of ethyl lactate and 36.0 g of propylene glycol monomethyl ether were dispersed together with 25 g of glass beads using a homogenizer at 7000 rpm for 30 minutes, and then the glass beads were removed by filtration, and varnish (I ′ ) Using the varnish (I ′), in the same manner as in Example 1, evaluation of adhesion and measurement of dielectric breakdown voltage were performed.
比較例10
合成例10で合成したポリマー(A)6.48g、キノンジアジド化合物(e)1.85g、カーボンブラック MA100(商品名、三菱マテリアル(株)製)0.37g、ポリヒドロキシ化合物としてTrisP−PA 1.30g、ガンマブチロラクトン27.0g、乳酸エチル27.0g、プロピレングリコールモノメチルエーテル36.0gをガラスビーズ25gとともにホモジナイザーを用いて、7000rpmで30分間分散処理後、ガラスビーズを濾過により除去し、ワニス(J’)を得た。ワニス(J’)を用いて実施例1と同様にして、接着性の評価および絶縁破壊電圧の測定を行った。
Comparative Example 10
6.48 g of polymer (A) synthesized in Synthesis Example 10, 1.85 g of quinonediazide compound (e), 0.37 g of carbon black MA100 (trade name, manufactured by Mitsubishi Materials Corporation), TrisP-PA 1. 30 g, 27.0 g of gamma butyrolactone, 27.0 g of ethyl lactate, and 36.0 g of propylene glycol monomethyl ether were dispersed together with glass beads 25 g together with a homogenizer at 7000 rpm for 30 minutes, and then the glass beads were removed by filtration, and varnish (J ') Got. Using the varnish (J ′), in the same manner as in Example 1, evaluation of adhesion and measurement of dielectric breakdown voltage were performed.
比較例11
成分(c)の代わりにNKX−1320(商品名、3−(2’−N−メチルベンズイミダゾリル)−7−ジエチルアミノクマリン、林原生物化学研究所(株)製、吸収極大波長413nm)0.37gを用いたこと以外は、実施例1と同様にしてワニス(K’)を作製し、接着性の評価および絶縁破壊電圧の測定を行った。
Comparative Example 11
NKX-1320 (trade name, 3- (2′-N-methylbenzimidazolyl) -7-diethylaminocoumarin, manufactured by Hayashibara Biochemical Laboratories, Inc., absorption maximum wavelength 413 nm) instead of component (c) 0.37 g A varnish (K ′) was prepared in the same manner as in Example 1 except that was used, and adhesion evaluation and dielectric breakdown voltage were measured.
比較例12
成分(c)を用いないこと以外は、実施例4と同様にしてワニス(L’)を作製し、接着性の評価および絶縁破壊電圧の測定を行った。
Comparative Example 12
A varnish (L ′) was produced in the same manner as in Example 4 except that the component (c) was not used, and adhesion evaluation and dielectric breakdown voltage were measured.
比較例13
成分(c)を用いないこと以外は、実施例5と同様にしてワニス(M’)を作製し、接着性の評価および絶縁破壊電圧の測定を行った。
Comparative Example 13
A varnish (M ′) was prepared in the same manner as in Example 5 except that the component (c) was not used, and adhesion evaluation and dielectric breakdown voltage were measured.
比較例14
合成例15で合成したポリマー(F)8.54g、1−アセチルアミノアントラキノン1.46gをNMP90.0gに溶解しワニス(N’)とした。ワニス(N’)を用いて実施例1と同様にして、接着性の評価および絶縁破壊電圧の測定を行った。
Comparative Example 14
8.54 g of the polymer (F) synthesized in Synthesis Example 15 and 1.46 g of 1-acetylaminoanthraquinone were dissolved in 90.0 g of NMP to obtain a varnish (N ′). Using the varnish (N ′), in the same manner as in Example 1, evaluation of adhesion and measurement of dielectric breakdown voltage were performed.
比較例15
ノボラック樹脂EP4020G(旭有機材(株)製)6.48g、キノンジアジド化合物(e)1.85g、BONASORB UA−3912 0.37gをガンマブチロラクトン27.0g、乳酸エチル27.0g、プロピレングリコールモノメチルエーテル36.0gに溶解し、ワニス(O’)とした。ワニス(O’)を用いて実施例1と同様に接着性の評価、絶縁破壊電圧の測定およびPCT試験を行った。
Comparative Example 15
6.48 g of novolak resin EP4020G (manufactured by Asahi Organic Materials Co., Ltd.), 1.85 g of quinonediazide compound (e), 0.37 g of BONASORB UA-3912, 27.0 g of gamma butyrolactone, 27.0 g of ethyl lactate, propylene glycol monomethyl ether 36 Dissolved in 0.0 g to obtain varnish (O ′). Evaluation of adhesiveness, measurement of dielectric breakdown voltage, and PCT test were performed in the same manner as in Example 1 using varnish (O ′).
実施例1〜15および比較例1〜15の接着性の評価結果、絶縁破壊電圧の測定結果およびPCT試験結果を表1〜2にまとめた。 The adhesive evaluation results, the dielectric breakdown voltage measurement results, and the PCT test results of Examples 1-15 and Comparative Examples 1-15 are summarized in Tables 1-2.
実施例16
有機EL表示装置を以下の方法で作製した。
Example 16
An organic EL display device was produced by the following method.
300mm×350mm×0.7mmの無アルカリガラス(コーニングジャパン(株)製、#1737)表面にスパッタリング蒸着法によって厚さ130nmのITO透明電極膜が形成された300mm×350mmのガラス基板を用意した。ITO基板上にフォトレジストをスピナー塗布して、通常のフォトリソグラフィ法による露光・現像によってパターニングした。ITOの不要部分をエッチングして除去した後、フォトレジストを除去することで、ITO膜を長さ90mm、幅80μmのストライプ形状にパターニングした。このストライプ状第一電極は100μmピッチである。 A 300 mm × 350 mm glass substrate in which an ITO transparent electrode film having a thickness of 130 nm was formed on the surface of 300 mm × 350 mm × 0.7 mm non-alkali glass (Corning Japan Co., Ltd., # 1737) by a sputtering vapor deposition method was prepared. A photoresist was applied onto the ITO substrate by a spinner, and patterning was performed by exposure and development by a normal photolithography method. After removing unnecessary portions of the ITO by etching, the ITO film was patterned into a stripe shape having a length of 90 mm and a width of 80 μm by removing the photoresist. The striped first electrodes have a pitch of 100 μm.
このITOをパターニングしたガラス基板上にワニス(A)をスリットダイコーティング法を用いてソフトベーク後の膜厚が0.7μmとなるように塗布した。塗布速度は3m/分とした。スピンコート法を用いた場合、ソフトベーク後の膜厚が0.7μmとなるように回転数を調整して塗布した。その後ホットプレ−ト(中央理研(株)製EA−4331)を用いて、プロキシピンでガラス基板をホットプレートから高さ5.0mmに保持して120℃で10分間加熱することにより、ポジ型感光性樹脂塗布膜を得た。このワニスAの塗布膜にフォトマスクを介して水銀灯の全波長で露光量70mJ/cm2(i線換算)の紫外線を照射した後、2.38%TMAH水溶液で30秒間露光部分のみを溶解させることで現像し、純水でリンスした。得られたポリイミド前駆体樹脂パターンをクリーンオーブン中の窒素雰囲下で230℃で30分間加熱してキュアし、絶縁層を第一電極のエッジを覆うように形成した。絶縁層の厚さは約0.4μmであった。このようにして、幅70μm、長さ250μmの開口部が第一電極の中央部を露出せしめ、しかも、第一電極の端部を覆うような形状の感光性ポリイミド樹脂からなる遮光性絶縁層を形成した。 Varnish (A) was applied on a glass substrate patterned with ITO using a slit die coating method so that the film thickness after soft baking was 0.7 μm. The coating speed was 3 m / min. When the spin coating method was used, the coating was performed by adjusting the rotation speed so that the film thickness after soft baking was 0.7 μm. Then, using a hot plate (EA-4331 manufactured by Chuo Riken Co., Ltd.), the glass substrate is held at a height of 5.0 mm from the hot plate with a proxy pin, and heated at 120 ° C. for 10 minutes, thereby positive-type photosensitive. An adhesive resin coating film was obtained. This coating film of varnish A is irradiated with ultraviolet rays having an exposure amount of 70 mJ / cm 2 (i-line conversion) at all wavelengths of a mercury lamp through a photomask, and then only the exposed portion is dissolved with a 2.38% TMAH aqueous solution for 30 seconds. This was developed and rinsed with pure water. The obtained polyimide precursor resin pattern was cured by heating at 230 ° C. for 30 minutes in a nitrogen atmosphere in a clean oven to form an insulating layer so as to cover the edge of the first electrode. The thickness of the insulating layer was about 0.4 μm. In this way, a light-shielding insulating layer made of a photosensitive polyimide resin having a shape in which an opening having a width of 70 μm and a length of 250 μm exposes the center of the first electrode and covers the end of the first electrode. Formed.
次に、絶縁層を形成した基板を用いて有機電界発光表示装置の作製を行った。まず、発光層を含む薄膜層を、抵抗線加熱方式による真空蒸着法によって形成した。次に基板有効エリア全面に蒸着して正孔輸送層を形成し、シャドーマスクを用いて発光層、第二電極の
アルミニウムを形成した。
Next, an organic electroluminescent display device was manufactured using a substrate on which an insulating layer was formed. First, a thin film layer including a light emitting layer was formed by a vacuum evaporation method using a resistance wire heating method. Next, a hole transport layer was formed by vapor deposition over the entire substrate effective area, and a light emitting layer and aluminum for the second electrode were formed using a shadow mask.
得られた上記基板を蒸着機から取り出し、基板と封止用ガラス板とを紫外線硬化型エポキシ樹脂を用いて貼り合わせることで封止した。このようにしてITOストライプ状第一電極上に、パターニングされた発光層が形成され、第一電極と直交するようにストライプ状第二電極が配置された単純マトリクス型カラー有機電界発光表示装置を作製した。本表示装置を線順次駆動したところ、良好な表示特性を得ることができた。絶縁層の境界部分で薄膜層や第二電極が、薄くなったり段切れを起こすようなこともなく、スムーズに成膜されたので、発光領域内での輝度ムラは認められず、安定な発光が得られた。また、耐久性試験後の有効発光面積率Sは100%であり、高い信頼性を示した。 The obtained said board | substrate was taken out from the vapor deposition machine, and it sealed by bonding together a board | substrate and the glass plate for sealing using the ultraviolet curing epoxy resin. In this way, a simple matrix type color organic light emitting display device in which a patterned light emitting layer is formed on the ITO striped first electrode and the striped second electrode is arranged so as to be orthogonal to the first electrode is manufactured. did. When this display device was line-sequentially driven, good display characteristics could be obtained. The thin film layer and the second electrode at the boundary of the insulating layer were formed smoothly without any thinning or disconnection, so there was no uneven brightness in the light emitting region and stable light emission. was gotten. The effective light emission area ratio S after the durability test was 100%, indicating high reliability.
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