JP2008034740A - Load lock device, substrate processing apparatus and substrate processing system including the same - Google Patents

Abstract

A load lock device capable of quickly raising the degree of vacuum, and a substrate processing apparatus and a substrate processing system provided with the load lock device are provided.
A load lock chamber RL includes a chamber 201. A vacuum pump 205 is connected to the bottom of the chamber 201 via a pipe 205a. In the chamber 201, a rare gas supply nozzle 206 is provided above the substrate W. In the load lock chamber RL, the rare gas is supplied from the rare gas supply nozzle 206 to replace the atmosphere in the chamber 201 with the rare gas, and then the inside of the chamber 201 is decompressed by the vacuum pump 205.
[Selection] Figure 5

Description

  The present invention relates to a load lock device used for loading / unloading a substrate to / from a decompression processing apparatus that processes a substrate under a pressure lower than atmospheric pressure, and a substrate processing apparatus and a substrate processing system including the load lock device.

  In order to perform various processes on various substrates such as a semiconductor substrate, a liquid crystal display substrate, a plasma display substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, and a photomask substrate, It is used.

  In such a substrate processing apparatus, generally, a plurality of different processes are continuously performed on a single substrate. The substrate processing apparatus described in Patent Document 1 includes an indexer block, an antireflection film processing block, a resist film processing block, a development processing block, and an interface block. An exposure apparatus that performs an exposure process on the substrate is disposed adjacent to the interface block.

  In the above substrate processing apparatus, the substrate carried in from the indexer block is subjected to the formation of the antireflection film and the resist film in the antireflection film processing block and the resist film processing block, and then through the interface block. Are conveyed to the exposure apparatus. After the exposure process is performed on the resist film on the substrate in the exposure apparatus, the substrate is transported to the development processing block via the interface block. After a resist pattern is formed by performing development processing on the resist film on the substrate in the development processing block, the substrate is transported to the indexer block.

In recent years, further miniaturization of resist patterns has been demanded as devices have higher density and higher integration. The resolution performance of the exposure apparatus, which is important for making the resist pattern finer, depends on the wavelength of the light source of the exposure apparatus. Therefore, an exposure technique using EUV (ultra-ultraviolet) having an extremely short wavelength of about 13 nm has been developed.
JP 2003-324139 A JP 2000-150395 A

  The above EUV is easily absorbed by the atmosphere. Therefore, it is necessary to maintain the inside of the exposure apparatus in a state where the degree of vacuum is extremely high (hereinafter referred to as a high vacuum state). On the other hand, the inside of the substrate processing apparatus is usually at atmospheric pressure. Accordingly, in order to transport the substrate between the substrate processing apparatus and the exposure apparatus while maintaining the exposure apparatus in a high vacuum state, it is necessary to provide a load lock chamber for adjusting the mutual environment (for example, , See Patent Document 2).

  When the substrate is transferred from the substrate processing apparatus to the exposure apparatus, the substrate is temporarily stored in the load lock chamber, and in that state, the load lock chamber is decompressed to a high vacuum state. Thereafter, the substrate is transferred from the high vacuum load lock chamber to the high vacuum exposure apparatus. However, it takes a long time to depressurize the load lock chamber to a high vacuum state, resulting in a decrease in throughput.

  An object of the present invention is to provide a load lock device capable of quickly raising the degree of vacuum, a substrate processing apparatus and a substrate processing system provided with the load lock device.

  (1) A load lock device according to a first aspect of the present invention is a load lock device used for loading or unloading a substrate to or from a decompression processing device that performs processing on a substrate under a pressure lower than atmospheric pressure, and can accommodate the substrate. A housing that forms a sealed space, a decompression unit that decompresses the interior of the housing, and an atmosphere replacement unit that replaces the atmosphere in the housing with a rare gas before the decompression unit decompresses the interior of the housing.

  In this load lock device, the substrate is housed in a housing forming a sealed space, and the atmosphere in the housing is replaced with a rare gas by the atmosphere replacement means in this state. Thereafter, the inside of the housing is decompressed by the decompression means.

  As described above, the atmosphere in the housing is replaced with the rare gas before the pressure in the housing is reduced, so that the inside of the housing can be exhausted with less energy than in the case where the atmosphere in the housing is air. Therefore, it is possible to quickly increase the degree of vacuum in the housing. As a result, the substrate can be carried into and out of the reduced pressure processing apparatus, and the throughput can be improved.

  (2) The atmosphere replacement unit may include a rare gas supply unit that supplies a rare gas into the housing.

  In this case, the rare gas is supplied into the housing by the rare gas supply means before the pressure in the housing is reduced, and the atmosphere in the housing is replaced with the rare gas.

  (3) The atmosphere replacement means may further include a cooling means for liquefying or solidifying components in the atmosphere excluding the rare gas in the housing.

  In this case, the atmosphere in the housing can be efficiently and quickly replaced with the rare gas by liquefying or solidifying the components in the atmosphere excluding the rare gas by the cooling means while supplying the rare gas into the housing.

  (4) The rare gas may be helium gas. In this case, since the boiling point of helium gas is lower than the boiling point of atmospheric components such as nitrogen, oxygen, carbon dioxide and water vapor, the atmospheric components such as nitrogen, oxygen, carbon dioxide and water vapor in the casing are liquefied or solidified. The helium gas can be maintained in a gaseous state.

  (5) The atmosphere replacement unit may further include an exhaust unit that exhausts the atmosphere in the housing.

  In this case, the atmosphere in the housing can be efficiently replaced with the rare gas by supplying the rare gas into the housing and exhausting the housing simultaneously or alternately.

  (6) The load lock device may further include a case heating means for heating the case.

  In this case, the liquid adhering to the housing is vaporized by heating the housing by the housing heating means. Thereby, the liquid adhering to the housing is prevented from solidifying due to adiabatic expansion during decompression in the housing. Therefore, it is possible to prevent the degree of vacuum in the housing from being lowered by gradually sublimating the solidified product. As a result, the degree of vacuum in the housing can be increased more quickly.

  (7) The load lock device may further include substrate heating means for heating the substrate accommodated in the housing.

  In this case, when the substrate in the housing is heated by the substrate heating means, the liquid adhering to the substrate is vaporized. This prevents the liquid adhering to the substrate from solidifying due to adiabatic expansion during decompression in the housing. Therefore, it is possible to prevent the degree of vacuum in the housing from being lowered by gradually sublimating the solidified product. As a result, the degree of vacuum in the housing can be increased more quickly.

  (8) The load lock device may further include a case cooling means for cooling the case when the pressure inside the case is reduced by the pressure reducing means.

  In this case, the housing is cooled by the housing cooling means when the inside of the housing is decompressed, so that the molecules remaining in the housing almost stop moving near the surface of the housing and adhere to the housing. Thereby, the vacuum degree in a housing | casing can be raised more rapidly.

  (9) A substrate processing apparatus according to a second aspect of the present invention is a substrate processing apparatus disposed adjacent to a decompression processing apparatus that performs processing on a substrate under a pressure lower than atmospheric pressure. A normal pressure processing unit that performs processing, and a transfer unit that transfers the substrate between the normal pressure processing unit and the decompression processing device, and the transfer unit is used for loading or unloading the substrate to or from the decompression processing device. The load lock device includes a housing that can accommodate a substrate and forms a sealed space, a decompression unit that depressurizes the inside of the housing, and an atmosphere in the housing before depressurization by the decompression unit. And atmosphere replacement means for replacing with.

  In this substrate processing apparatus, the substrate is processed under atmospheric pressure by the normal pressure processing unit, and the substrate is transferred between the normal pressure processing unit and the reduced pressure processing apparatus by the transfer unit. When the substrate is carried into or out of the decompression processing apparatus by the delivery unit, the substrate is temporarily carried into the load lock device.

  In the load lock device, the substrate is housed in a housing that forms a sealed space, and the atmosphere in the housing is replaced with a rare gas by the atmosphere replacement means in that state. Thereafter, the inside of the housing is decompressed by the decompression means.

  By replacing the atmosphere in the housing with a rare gas before the pressure in the housing is reduced, the interior of the housing can be exhausted with less energy than when the atmosphere in the housing is air. Therefore, it is possible to quickly increase the degree of vacuum in the housing. As a result, the substrate can be carried into and out of the reduced pressure processing apparatus, and the throughput can be improved.

  (10) A substrate processing system according to a third aspect of the present invention includes a decompression processing device that performs processing on a substrate under a pressure lower than atmospheric pressure, and a load lock device that is used to carry in or out the substrate from the decompression processing device, The load lock device includes a housing that can accommodate a substrate and forms a sealed space, a decompression unit that decompresses the interior of the housing, and an atmosphere replacement unit that replaces the atmosphere in the housing with a rare gas before decompression of the interior of the housing by the decompression unit. Are provided.

  In this substrate processing system, the substrate is carried into or out of the decompression processing apparatus via the load lock device, and the substrate is processed under a pressure lower than atmospheric pressure by the decompression processing apparatus.

  In the load lock device, the substrate is housed in a housing that forms a sealed space, and the atmosphere in the housing is replaced with a rare gas by the atmosphere replacement means in that state. Thereafter, the inside of the housing is decompressed by the decompression means.

  By replacing the atmosphere in the housing with a rare gas before the pressure in the housing is reduced, the interior of the housing can be exhausted with less energy than when the atmosphere in the housing is air. Therefore, it is possible to quickly increase the degree of vacuum in the housing. As a result, it is possible to quickly carry in and out of the substrate from the reduced pressure processing apparatus and improve throughput.

  (11) The substrate processing system may further include a delivery unit for delivering the substrate to the decompression processing apparatus, and the load lock device may be provided in the delivery unit.

  In this case, the substrate is temporarily carried into the load lock device at the transfer unit, and then the substrate is transferred to the decompression processing device. In the load lock device, the degree of vacuum can be quickly increased. Thereby, the substrate can be carried into and out of the reduced pressure processing apparatus quickly.

  (12) The substrate processing system may further include a normal pressure processing unit that performs processing on the substrate under atmospheric pressure, and the transfer unit may transfer the substrate between the normal pressure processing unit and the reduced pressure processing apparatus.

  In this case, when the substrate is transported between the normal pressure processing unit and the decompression processing device, the substrate is temporarily carried into the load lock device in the transfer unit. In the load lock device, the degree of vacuum can be quickly increased. Accordingly, the substrate can be quickly transported between the normal pressure processing unit and the reduced pressure processing apparatus.

  According to the present invention, the degree of vacuum in the housing can be quickly increased. As a result, the substrate can be quickly transferred to the reduced pressure processing apparatus, and the throughput can be improved.

  Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. In the following description, the substrate refers to a semiconductor substrate, a liquid crystal display substrate, a plasma display substrate, a photomask glass substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, and the like. Say.

(1) Configuration of Substrate Processing Apparatus FIG. 1 is a plan view of a substrate processing apparatus provided with a decompression apparatus according to an embodiment of the present invention. Note that FIG. 1 and FIGS. 2 to 5 and FIG. 10 described later are accompanied by arrows indicating X, Y, and Z directions orthogonal to each other in order to clarify the positional relationship. The X direction and the Y direction are orthogonal to each other in the horizontal plane, and the Z direction corresponds to the vertical direction. In each direction, the direction in which the arrow points is the + direction, and the opposite direction is the-direction. Further, the rotation direction around the Z direction is defined as the θ direction.

  As shown in FIG. 1, the substrate processing apparatus 500 includes an indexer block 1, an antireflection film processing block 2, a resist film processing block 3, a development processing block 4, and an interface block 5. An exposure device 6 is disposed adjacent to the interface block 5.

  Hereinafter, each of the indexer block 1, the antireflection film processing block 2, the resist film processing block 3, the development processing block 4 and the interface block 5 is referred to as a processing block.

In the present embodiment, each processing block in the substrate processing apparatus 500 performs various processes on the substrate W under atmospheric pressure. On the other hand, the exposure processing is performed on the substrate W in a high vacuum state (for example, 10 ⁻⁶ Pa) in the exposure apparatus 6.

  The indexer block 1 includes a main controller (control unit) 91 that controls the operation of each processing block, a plurality of carrier platforms 92, and an indexer robot IR. In the indexer robot IR, hands IRH1 and IRH2 for delivering the substrate W are provided above and below.

  The antireflection film processing block 2 includes antireflection film heat treatment units 100 and 101, an antireflection film application processing unit 20, and a first central robot CR1. The antireflection film coating processing unit 20 is provided to face the antireflection film heat treatment units 100 and 101 with the first central robot CR1 interposed therebetween. The first center robot CR1 is provided with hands CRH1 and CRH2 for transferring the substrate W up and down.

  A partition wall 11 is provided between the indexer block 1 and the antireflection film processing block 2 for shielding the atmosphere. In the partition wall 11, substrate platforms PASS 1 and PASS 2 for transferring the substrate W between the indexer block 1 and the anti-reflection film processing block 2 are provided close to each other in the vertical direction. The upper substrate platform PASS1 is used when the substrate W is transported from the indexer block 1 to the antireflection film processing block 2, and the lower substrate platform PASS2 is used to transport the substrate W to the antireflection film processing block. Used when transporting from 2 to the indexer block 1.

  The substrate platforms PASS1, PASS2 are provided with optical sensors (not shown) that detect the presence or absence of the substrate W. Thereby, it is possible to determine whether or not the substrate W is placed on the substrate platforms PASS1 and PASS2. The substrate platforms PASS1, PASS2 are provided with a plurality of support pins fixedly installed. The optical sensors and the support pins are also provided in the same manner on the substrate platforms PASS3 to PASS8 described later.

  The resist film processing block 3 includes resist film heat treatment units 110 and 111, a resist film coating processing unit 30, and a second central robot CR2. The resist film application processing unit 30 is provided opposite to the resist film heat treatment units 110 and 111 with the second central robot CR2 interposed therebetween. The second center robot CR2 is provided with hands CRH3 and CRH4 for transferring the substrate W up and down.

  A partition wall 12 is provided between the antireflection film processing block 2 and the resist film processing block 3 for shielding the atmosphere. The partition wall 12 is provided with substrate platforms PASS3 and PASS4 which are close to each other in the vertical direction for transferring the substrate W between the antireflection film processing block 2 and the resist film processing block 3. The upper substrate platform PASS3 is used when the substrate W is transported from the antireflection film processing block 2 to the resist film processing block 3, and the lower substrate platform PASS4 is used to transfer the substrate W to the resist film. It is used when transporting from the processing block 3 to the processing block 2 for antireflection film.

  The development processing block 4 includes a development heat treatment section 120, a post-exposure bake heat treatment section 121, a development processing section 40, and a third central robot CR3. The post-exposure bake heat treatment unit 121 is adjacent to the interface block 5 and includes substrate platforms PASS7 and PASS8 as described later. The development processing unit 40 is provided opposite to the development heat treatment unit 120 and the post-exposure bake heat treatment unit 121 with the third central robot CR3 interposed therebetween. The third center robot CR3 is provided with hands CRH5 and CRH6 for transferring the substrate W up and down.

  A partition wall 13 is provided between the resist film processing block 3 and the development processing block 4 for shielding the atmosphere. The partition wall 13 is provided with substrate platforms PASS5 and PASS6 adjacent to each other in the vertical direction for transferring the substrate W between the resist film processing block 3 and the development processing block 4. The upper substrate platform PASS5 is used when the substrate W is transferred from the resist film processing block 3 to the development processing block 4, and the lower substrate platform PASS6 is used to transfer the substrate W from the development processing block 4 to the resist processing block 4. Used when transported to the film processing block 3.

  The interface block 5 includes a fourth center robot CR4 and an edge exposure unit EEW. Further, below the edge exposure unit EEW, a sending buffer unit SBF, a return buffer unit RBF, and a load lock chamber RL are provided. Details of the load lock chamber RL will be described later. The fourth center robot CR4 is provided with hands CRH7 and CRH8 for delivering the substrate W up and down.

  The interface block 5 is provided with a local controller LC that controls the operation of each component in the interface block 5.

  The exposure apparatus 6 is connected to the load lock chamber RL via the connecting portion 15. A transport mechanism ER is provided in the exposure apparatus 6.

  2 is a schematic side view of the substrate processing apparatus 500 of FIG. 1 viewed from the + X direction, and FIG. 3 is a schematic side view of the substrate processing apparatus 500 of FIG. 1 viewed from the −X direction.

  First, the configuration on the + X side of the substrate processing apparatus 500 will be described with reference to FIG. As shown in FIG. 2, in the antireflection film coating processing unit 20 (see FIG. 1) of the antireflection film processing block 2, three coating units BARC are vertically stacked. Each coating unit BARC includes a spin chuck 21 that rotates while adsorbing and holding the substrate W in a horizontal posture, and a supply nozzle 22 that supplies a coating liquid for an antireflection film to the substrate W held on the spin chuck 21.

  In the resist film coating processing unit 30 of the resist film processing block 3 (see FIG. 1), three coating units RES are stacked one above the other. Each coating unit RES includes a spin chuck 31 that rotates while adsorbing and holding the substrate W in a horizontal posture, and a supply nozzle 32 that supplies a coating liquid for a resist film to the substrate W held on the spin chuck 31.

  In the development processing unit 40 of the development processing block 4, five development processing units DEV are vertically stacked. Each development processing unit DEV includes a spin chuck 41 that rotates while adsorbing and holding the substrate W in a horizontal posture, and a supply nozzle 42 that supplies the developer to the substrate W held on the spin chuck 41.

  In the interface block 5, two edge exposure units EEW, a sending buffer unit SBF, a return buffer unit RBF, and two load lock chambers RL are stacked in a vertical direction. Each edge exposure unit EEW includes a spin chuck 51 that rotates by attracting and holding the substrate W in a horizontal posture, and a light irradiator 52 that exposes the periphery of the substrate W held on the spin chuck 51. The load lock chamber RL will be described later.

  Next, the configuration on the −X side of the substrate processing apparatus 500 will be described with reference to FIG. 3. As shown in FIG. 3, the antireflection film heat treatment sections 100 and 101 of the antireflection film processing block 2 include two heating units (hot plates) HP and two cooling units (cooling plates) CP, respectively. Laminated. In addition, in the antireflection film heat treatment units 100 and 101, local controllers LC for controlling the temperatures of the heating unit HP and the cooling unit CP are respectively arranged at the top.

  Two heating units HP and two cooling units CP are stacked in the resist film heat treatment sections 110 and 111 of the resist film processing block 3, respectively. In addition, in the resist film heat treatment units 110 and 111, local controllers LC for controlling the temperatures of the heating unit HP and the cooling unit CP are respectively arranged at the top.

  In the development heat treatment section 120 of the development processing block 4, two heating units HP and two cooling units CP are stacked and arranged. In the post-exposure baking heat treatment section 121, two heating units HP, two cooling units CP, and substrate platforms PASS7 and PASS8 are stacked one above the other. In addition, in the development heat treatment section 120 and the post-exposure bake heat treatment section 121, local controllers LC for controlling the temperatures of the heating unit HP and the cooling unit CP are arranged at the top.

  The numbers of coating units BARC, RES, development processing unit DEV, edge exposure unit EEW, heating unit HP, cooling unit CP, and load lock chamber RL may be appropriately changed according to the processing speed of each block.

(2) Operation of Substrate Processing Apparatus Next, the operation of the substrate processing apparatus 500 according to the present embodiment will be described with reference to FIGS.

  On the carrier mounting table 92 of the indexer block 1, a carrier C that stores a plurality of substrates W in multiple stages is loaded. The indexer robot IR takes out the unprocessed substrate W stored in the carrier C using the hand IRH1. Thereafter, the indexer robot IR rotates in the ± θ direction while moving in the ± X direction, and places the unprocessed substrate W on the substrate platform PASS1.

  In the present embodiment, a front opening unified pod (FOUP) is adopted as the carrier C. However, the present invention is not limited to this. ) Etc. may be used.

  Further, the indexer robot IR, the first to fourth center robots CR1 to CR4, and the interface transport mechanism IFR are each provided with a direct-acting transport robot that slides linearly with respect to the substrate W and moves the hand back and forth. Although it is used, the present invention is not limited to this, and an articulated transfer robot that linearly moves the hand forward and backward by moving the joint may be used.

  The unprocessed substrate W placed on the substrate platform PASS1 is received by the first central robot CR1 of the antireflection film processing block 2. The first center robot CR1 carries the substrate W into the antireflection film heat treatment units 100 and 101.

  Thereafter, the first central robot CR1 takes out the heat-treated substrate W from the antireflection film heat treatment units 100 and 101, and carries the substrate W into the antireflection film application processing unit 20. In the antireflection film coating processing section 20, an antireflection film is applied and formed on the substrate W by the coating unit BARC in order to reduce low standing waves and halation that occur during exposure.

  Next, the first central robot CR1 takes out the substrate W that has been coated from the coating processing unit 20 for antireflection film, and carries the substrate W into the thermal processing units 100 and 101 for antireflection film. Thereafter, the first central robot CR1 takes out the heat-treated substrate W from the antireflection film heat treatment units 100 and 101, and places the substrate W on the substrate platform PASS3.

  The substrate W placed on the substrate platform PASS3 is received by the second central robot CR2 of the resist film processing block 3. The second central robot CR2 carries the substrate W into the resist film heat treatment units 110 and 111.

  Thereafter, the second central robot CR2 takes out the heat-treated substrate W from the resist film heat treatment units 110 and 111, and carries the substrate W into the resist film coating treatment unit 30. In the resist film application processing unit 30, a resist film is applied and formed on the substrate W on which the antireflection film is applied and formed by the application unit RES.

  Next, the second central robot CR2 takes out the coated substrate W from the resist film coating processing unit 30 and carries the substrate W into the resist film thermal processing units 110 and 111. Thereafter, the second central robot CR2 takes out the heat-treated substrate W from the resist film heat treatment units 110 and 111, and places the substrate W on the substrate platform PASS5.

  The substrate W placed on the substrate platform PASS5 is received by the third central robot CR3 of the development processing block 4. The third central robot CR3 places the substrate W on the substrate platform PASS7.

  The substrate W placed on the substrate platform PASS7 is received by the fourth central robot CR4 of the interface block 5. The fourth central robot CR4 carries the substrate W into the edge exposure unit EEW. In the edge exposure unit EEW, the peripheral portion of the substrate W is subjected to exposure processing.

  Next, the fourth central robot CR4 takes out the edge-exposed substrate W from the edge exposure unit EEW, and carries the substrate W into the load lock chamber RL.

  Next, the pressure in the load lock chamber RL is reduced until a high vacuum state is reached. Thereafter, the substrate W is transported from the load lock chamber RL into the exposure device 6 by the transport mechanism ER provided in the exposure device 6. Note that the load lock chamber RL is temporarily maintained in a high vacuum state.

  Next, the substrate W after the exposure processing is carried into the load lock chamber RL maintained in a high vacuum state by the transport mechanism ER. Subsequently, the load lock chamber RL is opened to atmospheric pressure, and the substrate W after the exposure processing is carried out of the load lock chamber RL by the fourth central robot CR4.

  As described above, when the substrate W is transported to the exposure apparatus 6, the load lock chamber RL is temporarily maintained in a high vacuum state. Therefore, during this period, the load lock chamber RL cannot accept the substrate W from the fourth central robot CR4.

  When all the load lock chambers RL (two in the present embodiment) cannot accept the substrate W, the edge-exposed substrate W is temporarily stored and stored in the sending buffer unit SBF by the fourth central robot CR4. Is done.

  Next, the fourth central robot CR4 carries the substrate W after the exposure processing carried out of the load lock chamber RL into the post-exposure baking heat treatment section 121 of the development processing block 4. In the post-exposure baking heat treatment part 121, post-exposure baking (PEB) is performed on the substrate W.

  If the development processing block 4 cannot accept the substrate W after the exposure processing due to a failure or the like, the substrate W after the exposure processing can be temporarily stored and stored in the return buffer unit RBF of the interface block 5.

  Next, the fourth central robot CR4 takes out the substrate W from the post-exposure bake heat treatment unit 121 and places the substrate W on the substrate platform PASS8.

  The substrate W placed on the substrate platform PASS8 is received by the third central robot CR3 of the development processing block 4. The third central robot CR3 carries the substrate W into the development processing unit 40. In the development processing unit 40, development processing is performed on the exposed substrate W.

  Next, the third central robot CR3 takes out the development-processed substrate W from the development processing unit 40, and carries the substrate W into the development heat treatment unit 120. Thereafter, the third central robot CR3 takes out the substrate W after the heat treatment from the development heat treatment unit 120 and places the substrate W on the substrate platform PASS6.

  The substrate W placed on the substrate platform PASS6 is placed on the substrate platform PASS4 by the second central robot CR2 of the resist film processing block 3. The substrate W placed on the substrate platform PASS4 is placed on the substrate platform PASS2 by the first central robot CR1 of the antireflection film processing block 2.

  The substrate W placed on the substrate platform PASS2 is stored in the carrier C by the indexer robot IR of the indexer block 1. Thereby, each process of the board | substrate W in the substrate processing apparatus 500 is complete | finished.

(3) Details of Load Lock Chamber As described above, when the substrate W is transferred from the substrate processing apparatus 500 to the exposure apparatus 6, the substrate W is temporarily carried into the load lock chamber RL in the interface block 5. . Then, after the load lock chamber RL is depressurized from the atmospheric pressure to the high vacuum state, the substrate W is delivered from the load lock chamber RL to the exposure apparatus 6.

  On the other hand, when the substrate W is transported from the exposure apparatus 6 to the substrate processing apparatus 500, the substrate W is transferred from the exposure apparatus 6 into the load lock chamber RL in a high vacuum state, and then the substrate W in the load lock chamber RL. Is conveyed to the development processing unit 40.

  Thus, by carrying the substrate W to the exposure apparatus 6 through the load lock chamber RL, the substrate W can be carried while maintaining the inside of the exposure apparatus 6 in a high vacuum state. Hereinafter, the details of the load lock chamber RL will be described.

(3-1) Configuration of Load Lock Chamber The configuration of the load lock chamber RL will be described with reference to FIGS. 4 is a schematic cross-sectional view in the XY plane of the load lock chamber RL, and FIG. 5 is a schematic cross-sectional view in the YZ plane of the load lock chamber RL. FIG. 6 is a diagram showing a control system of the load lock chamber RL.

  As shown in FIG. 4, the load lock chamber RL includes a chamber 201. A first loading / unloading port 201 a is provided on the −X side surface of the chamber 201, and a second loading / unloading port 201 b is provided on the + Y side surface of the chamber 201.

  The exposure apparatus 6 is connected to the + Y side of the chamber 201 via the connecting portion 15. A communication passage 15 a that communicates with the exposure apparatus 6 is formed in the connection portion 15. The space in the chamber 201 communicates with the exposure apparatus 6 through the second loading / unloading port 201b and the connection passage 15a.

  4 and 5, one connecting passage 15a communicates with the chamber 201 of one load lock chamber RL. However, a common connecting passage is connected to all the load lock chambers RL (in this embodiment, 2). May be provided so as to communicate with the chamber 201.

  In the load lock chamber RL, a shutter 202a is provided so as to close the first loading / unloading port 201a of the chamber 201 from the inside. A shutter 202b is provided so as to close the second loading / unloading port 201b of the chamber 201 from the inside. The shutters 202a and 202b are moved up and down by shutter driving devices 202A and 202B, respectively, and open and close the first and second loading / unloading outlets 201a and 201b. When the first and second loading / unloading ports 201a and 201b are closed, the chamber 201 is in an airtight state.

  Further, as shown in FIG. 5, a heating plate 203 for heating the substrate W is provided at the bottom of the chamber 201. A plurality of elevating pins 204 are provided so as to penetrate the heating plate 203 and the bottom of the chamber 201. The plurality of elevating pins 204 are moved in the vertical direction by the elevating pin driving device 204a.

  A vacuum pump 205 is connected to the bottom of the chamber 201 via a pipe 205a. A control valve V1 is inserted in the pipe 205a. By operating the vacuum pump 205 with the control valve V1 being opened, the chamber 201 is evacuated. Thereby, the inside of the chamber 201 is depressurized. When the vacuum pump 205 is stopped after the chamber 201 is depressurized, the control valve V1 is closed in order to prevent air from entering the chamber 201.

  A rare gas supply nozzle 206 is provided above the heating plate 203. The rare gas supply nozzle 206 is connected to a rare gas supply source GS via a pipe 206a. A control valve V2 is inserted in the pipe 206a. By opening the control valve V2, the rare gas is led from the rare gas supply source GS to the rare gas supply nozzle 206 through the pipe 206a and supplied into the chamber 201. In this embodiment, helium gas is used as a rare gas.

  A gas outlet 210 is provided on the side of the chamber 201. A circulation pipe 211 is connected to the gas outlet 210, and a valve V <b> 3 is inserted in the circulation pipe 211. In addition, a gas inlet 212 is provided in the upper portion of the chamber 201. A circulation pipe 213 is connected to the gas inlet 212, and a valve V <b> 4 is inserted in the circulation pipe 213. The circulation pipes 211 and 213 are connected via a circulation pump 215. In addition, a cooling device 216 and a removal device 217 are connected to the circulation pipe 213.

  By operating the circulation pump 215 with the valves V3 and V4 being opened, the atmosphere in the chamber 201 circulates through the circulation pipes 211 and 213.

The cooling device 216 cools the circulation pipe 213 using, for example, liquid nitrogen. The cooling temperature is set to a temperature lower than the boiling point of atmospheric components such as nitrogen (N ₂ ), oxygen (O ₂ ), carbon dioxide (CO ₂ ) and water (H ₂ O) and higher than that of helium. (For example, -200 ° C). Nitrogen has a boiling point of −196 ° C., oxygen has a boiling point of −183 ° C., carbon dioxide has a boiling point (sublimation point) of −79 ° C., and water has a boiling point of 100 ° C. On the other hand, the boiling point of helium is −269 ° C. The removing device 217 removes components liquefied or solidified in the circulation pipe 213.

  A plurality of heaters 218 for heating the chamber 201 are attached to the upper portion of the chamber 201. The chamber 201 is connected with a pressure sensor SE1 for detecting pressure and a rare gas concentration sensor SE2 for detecting helium concentration in the atmosphere.

  Here, the control system of the load lock chamber RL will be described. FIG. 6 is a block diagram for explaining a control system of the load lock chamber RL.

  As shown in FIG. 6, the pressure sensor SE1 outputs the detected value of the pressure in the chamber 201 to the local controller LC (see FIG. 1) of the interface block 5, and the rare gas concentration sensor SE2 is the local controller of the interface block 5. The detection value of the helium concentration in the chamber 201 is output to the LC. The local controller LC of the interface block 5 includes shutter driving devices 202A and 202B, a heating plate 203, a lift pin driving device 204a, a vacuum pump 205, a circulation pump 215, a cooling device 216, a removing device 217, a heater 218, and a control valve V1. Control signals are output to .about.V4 and the fourth central robot CR4 to control each operation.

(3-2) Operation of Load Lock Chamber Hereinafter, the operation of the load lock chamber RL will be described with reference to FIGS. 7 to 9 are flowcharts showing the operation of the load lock chamber RL.

  First, the local controller LC lowers the shutter 202a by the shutter driving device 202A and opens the first loading / unloading port 201a (step S1). Next, the local controller LC raises the elevating pins 204 by the elevating pin driving device 204a, and carries the substrate W before the exposure processing into the load lock chamber RL by the fourth central robot CR4 (FIG. 1) (step) S2). Then, the substrate W is placed on the lift pins 204.

  Subsequently, the local controller LC lowers the lift pins 204 by the lift pin driving device 204a to place the substrate W on the heating plate 203, and raises the shutter 202a by the shutter drive device 202A to perform the first loading / unloading. The outlet 201a is closed (step S3).

  Next, the local controller LC heats the substrate W by the heating plate 203 and heats the chamber 201 by the heater 218 (step S4). Thereby, moisture adhering to the substrate W and the chamber 201 is vaporized. Further, the organic solvent remaining in the organic film (antireflection film and resist film) on the substrate W and the organic solvent adhering to the chamber 201 are vaporized.

  After a predetermined time has elapsed, the local controller LC stops heating the substrate W and the chamber 201. Subsequently, the local controller LC starts supplying helium gas into the chamber 201 by opening the control valve V2 (step S5).

  Subsequently, the local controller LC opens the control valves V3 and V4 and operates the circulation device 215 to circulate the atmosphere in the chamber 201 (step S6). At the same time, the local controller LC operates the cooling device 216 to cool the circulation pipe 213 (step S7).

At this time, nitrogen Atmospheric components such as oxygen, carbon dioxide and water vapor are liquefied or solidified in the circulation pipe 213 and removed by the removing device 217. Further, the water and the organic solvent evaporated in step 4 are also removed in the same manner.

  On the other hand, the helium gas supplied into the chamber 201 is maintained in a gaseous state. Thereby, the atmosphere and vaporized components in the chamber 201 are replaced with helium gas, and the inside of the chamber 201 becomes a helium gas atmosphere.

  Next, the local controller LC determines whether or not the helium concentration in the atmosphere in the chamber 201 is higher than a preset threshold value R1 based on the detection value from the rare gas concentration sensor SE2 (step). S8).

  If the helium concentration is less than or equal to the threshold value R1, the local controller LC repeats the determination in step S8. When the helium concentration is higher than the threshold value R1, the local controller LC stops the supply of helium gas by closing the control valve V2 (step S9). Further, the local controller LC stops the circulation of the atmosphere in the chamber 201 and the cooling of the circulation pipe 213 by stopping the circulation device 215 and the cooling device 216 (step S10). Then, the local controller LC closes the control valves V3 and V4.

  Next, the local controller LC raises the raising / lowering pins 204 by the raising / lowering pin driving device 204a to separate the substrate W from the heating plate 203 (step S11), and starts exhausting the chamber 201 by the vacuum pump 205 (step S11). S12).

  In this case, the temperature of the substrate W can be lowered by separating the substrate W from the heating plate 203. In addition, since the air permeability between the substrate W and the heating plate 203 is ensured, even if moisture or the like remains between the substrate W and the heating plate 203, the moisture or the like is reliably ensured when the chamber 201 is exhausted. Can be removed.

  Further, in the present embodiment, since the inside of the chamber 201 is in a helium gas atmosphere before the inside of the chamber 201 is exhausted, the degree of vacuum in the chamber 201 can be quickly increased. The reason is as follows.

nitrogen Atmospheric components such as oxygen, carbon dioxide and water vapor exist as polyatomic molecules. In contrast, rare gases such as helium exist as monoatomic molecules. In polyatomic molecules, movements in the molecule such as rotation and vibration occur, but in monoatomic molecules such movement does not occur. Therefore, the rare gas has a lower energy than atmospheric components such as nitrogen, oxygen, carbon dioxide, and water vapor.

  Moreover, the rare gas has very high stability as a monoatomic molecule. Therefore, there is almost no interaction between monoatomic molecules. That is, the rare gas has particularly low energy among monoatomic molecules.

  As a result, the energy required to exhaust the helium gas from the chamber 201 is smaller than the energy required to exhaust the atmosphere. Therefore, the degree of vacuum in the chamber 201 can be quickly increased.

After evacuating the chamber 201 by the vacuum pump 205, the local controller LC, based on the detection value from the pressure sensor SE1, sets the threshold value M1 (for example, 10 ⁻⁶ Pa) to which the pressure in the chamber 201 is set in advance. ) Is determined (step S13).

  When the pressure in the chamber 201 is equal to or higher than the threshold value M1, the local controller LC repeats the determination in step S13. When the pressure in the chamber 201 is lower than the threshold value M1, the local controller LC lowers the shutter 202b by the shutter driving device 202B and opens the second carry-in / out port 201b (step S14).

  In this state, the substrate W on the lift pins 204 is unloaded from the load lock chamber RL by the transport mechanism ER (FIG. 1) of the exposure apparatus 6 and is loaded into the exposure apparatus 6 (step S15). Subsequently, the substrate W after the exposure processing is carried into the load lock chamber RL from the exposure device 6 by the transport mechanism ER, and placed on the lift pins 204 (step S16).

  Next, the local controller LC raises the shutter 202b by the shutter driving device 202B and closes the second loading / unloading port 201b (step S17). Subsequently, the local controller LC stops exhausting the chamber 201 by the vacuum pump 205 (step S18).

  Thereafter, the local controller LC lowers the shutter 202a by the shutter driving device 202A and opens the first loading / unloading port 201a (step S19). Thereby, the inside of the chamber 201 is opened to atmospheric pressure. In this state, the local controller LC carries out the substrate W after the exposure processing from the load lock chamber RL by the fourth central robot CR4 (step S20). Thereafter, in the load lock chamber RL, the operations of Step S1 to Step S20 are repeated.

(4) Effect of this Embodiment In this embodiment, the chamber 201 is set in a helium gas atmosphere before the pressure in the chamber 201 is reduced. Thereby, the energy required to exhaust the inside of the chamber 201 can be reduced. Therefore, the degree of vacuum in the chamber 201 can be quickly increased. As a result, the substrate W can be transported quickly between the substrate processing apparatus 500 and the exposure apparatus 6, and the throughput can be improved.

  In the present embodiment, when helium gas is supplied into the chamber 201, atmospheric components in the atmosphere are selectively liquefied or solidified and removed while circulating the atmosphere in the chamber 201. Thereby, the inside of the chamber 201 can be efficiently put into a helium gas atmosphere while suppressing the consumption of helium gas.

  In the present embodiment, the substrate W is heated by the heating plate 203 before the inside of the chamber 201 is depressurized, and the moisture adhering to the substrate W and the organic solvent in the organic film on the substrate W are vaporized.

  In this case, when the pressure in the chamber 201 is reduced, moisture and organic solvent adhering to the substrate W are prevented from solidifying due to adiabatic expansion. Thereby, it is possible to prevent the vacuum degree in the chamber 201 from being lowered by gradually sublimating the solidified moisture and the organic solvent. Therefore, the degree of vacuum in the chamber 201 can be increased more quickly.

  In this embodiment mode, the chamber 201 is heated by the heater 218 before the pressure in the chamber 201 is reduced, and moisture and an organic solvent adhering to the chamber 201 are vaporized.

  In this case, moisture and organic solvent adhering to the chamber 201 are prevented from solidifying due to adiabatic expansion when the pressure in the chamber 201 is reduced. Thereby, it is possible to prevent the vacuum degree in the chamber 201 from being lowered by gradually sublimating the solidified moisture and the organic solvent. Therefore, the degree of vacuum in the chamber 201 can be increased more quickly.

  Further, in the present embodiment, the vaporized water and organic solvent are liquefied or solidified and removed in the circulation pipe 213, so that the degree of vacuum in the chamber 201 is lowered by solidification of the water and organic solvent. Can be reliably prevented.

(5) Modified examples of the load lock chamber (5-1)
Hereinafter, modified examples of the load lock chamber RL will be described. FIG. 10 is a diagram illustrating a modification of the load lock chamber RL. Hereinafter, a modified example of the load lock chamber RL will be described with respect to differences from the load lock chamber RL illustrated in FIGS. 4 and 5.

  As shown in FIG. 10, a cooling pipe 220 is embedded in the upper part of the chamber 201 instead of the heater 218. One end and the other end of the cooling pipe 220 are connected to the cooling medium circulation device 220a. Control valves V5 and V6 are inserted in the cooling pipe 220.

  By opening the control valves V5 and V6, the coolant is circulated to the cooling pipe 220 by the coolant circulating device 220a. Thereby, the chamber 220 is cooled. As the cooling medium, for example, cooling water, liquid nitrogen, liquid helium, nitrogen gas or helium gas can be used.

In the load lock chamber RL shown in FIG. 10, when the pressure inside the chamber 201 is reduced, the atmospheric pressure inside the chamber 201 starts from the time when the pressure inside the chamber 201 becomes lower than a predetermined value (for example, 10 ⁻³ Pa). The chamber 201 is continuously cooled for a period until immediately before opening.

  In this case, when the pressure in the chamber 201 becomes lower than a predetermined value, there is almost no airflow in the chamber 201. Therefore, the molecules (including helium gas monoatomic molecules) remaining in the chamber 201 are in a state of performing only thermal motion.

  Since the chamber 201 is cooled in this state, the energy of the thermal motion of the molecules decreases near the surface of the chamber 201. Thereby, the movement of the molecules is almost stopped and adheres to the inner wall of the chamber 201. As a result, the degree of vacuum in the chamber 201 can be quickly increased.

  Further, by providing the cooling pipe 220 on the upper portion of the chamber 201, the chamber 201 can be cooled without being hindered by the heat of the heating plate 203. Therefore, the chamber 201 can be efficiently cooled.

  Instead of the cooling pipe 220 and the cooling medium circulation device 220a, another cooling mechanism such as a Peltier element for cooling may be provided. Alternatively, the plurality of cooling mechanisms may be provided in combination.

(5-2) Other Modifications In the above embodiment, atmospheric components and the like in the atmosphere are selectively liquefied or solidified and removed while circulating the atmosphere in the chamber 201 when helium gas is supplied into the chamber 201. As a result, the inside of the chamber 201 is a helium gas atmosphere, but a helium gas atmosphere may be formed by other methods.

  For example, the helium gas atmosphere in the chamber 201 may be formed by evacuating the chamber 201 with the vacuum pump 205 while supplying helium gas into the chamber 201.

  Alternatively, the helium concentration in the chamber 201 is gradually increased by alternately reducing the pressure in the chamber 201 and supplying the helium gas into the chamber 201 a plurality of times in a sealed state. A helium gas atmosphere may be formed. In these cases, the gas outlet 210, the gas outlet 210, the circulation device 215, the cooling device 216, the removal device 217, and the circulation pipes 211 and 213 may not be provided.

  Moreover, you may use combining the formation method of helium gas in the said embodiment, and these methods. For example, a helium gas atmosphere in the chamber 201 is formed by simultaneously or alternately performing decompression in the chamber 201 and supply of a rare gas into the chamber 201 while liquefying or solidifying and removing atmospheric components and the like in the atmosphere. May be.

  In the above embodiment, the inside of the chamber 201 is a helium gas atmosphere. However, the present invention is not limited to this, and the inside of the chamber 201 is neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), radon (Rn). It is good also as other noble gas atmospheres. Also in this case, energy required for exhausting the chamber 201 can be reduced. Thereby, the degree of vacuum in the chamber 201 can be quickly increased.

  When a rare gas having a boiling point higher than that of atmospheric components such as nitrogen (for example, argon (Ar)) is used, a rare gas atmosphere is formed by liquefying or solidifying and removing atmospheric components or the like in the atmosphere. It is preferable to adopt a method in which decompression in the chamber 201 and supply of the rare gas into the chamber 201 are performed simultaneously or alternately rather than the method.

(6) Other Embodiments In the above embodiment, the processing of the substrate W is performed in the exposure apparatus 16 in a high vacuum state, but the antireflection film coating processing unit 20 and the resist film coating in the substrate processing apparatus 500 are performed. The substrate W may be processed in a high vacuum state in any one of the processing unit 30, the development processing unit 40, and the edge exposure unit EEW, or another processing unit that processes the substrate W in a high vacuum state is a substrate. It may be provided in the processing apparatus 500.

  In that case, a load lock chamber is provided adjacent to the processing unit in the high vacuum state, and the substrate W is temporarily stored in the load lock chamber when the substrate W is loaded into the processing unit in the high vacuum state. The In this state, the load lock chamber is brought into a high vacuum state.

(7) Correspondence between each constituent element of claims and each part of the embodiment Hereinafter, an example of correspondence between each constituent element of the claims and each part of the embodiment will be described, but the present invention is limited to the following examples. Not.

  In the above embodiment, the exposure apparatus 6 corresponds to the decompression processing apparatus, the load lock chamber RL corresponds to the load lock apparatus, the chamber 201 corresponds to the housing, the vacuum pump 205 corresponds to the decompression means, The gas supply nozzle 206, the cooling device 216, or the vacuum pump 205 corresponds to the atmosphere replacement unit.

  The rare gas supply nozzle 206 corresponds to a rare gas supply means, the cooling device 216 corresponds to a cooling means, the vacuum pump 205 corresponds to an exhaust means, the heater 218 corresponds to a casing heating means, and the heating plate 203 Corresponds to the substrate heating means, and the cooling pipe 220 and the cooling medium circulation device 220a correspond to the casing cooling means.

  The indexer block 1, the antireflection film processing block 2, the resist film processing block 3, and the development processing block 4 correspond to an atmospheric pressure processing unit, the interface block 5 corresponds to a transfer unit, and the substrate processing apparatus 500 and the exposure unit. The apparatus 6 corresponds to a substrate processing system.

  The present invention can be used for processing various substrates.

It is a top view of the substrate processing apparatus provided with the decompression device concerning one embodiment of the present invention. It is the schematic side view which looked at the substrate processing apparatus of Drawing 1 from the + X direction. It is the schematic side view which looked at the substrate processing apparatus of Drawing 1 from the -X direction. It is typical sectional drawing in XY plane of a load lock chamber. It is typical sectional drawing in the YZ plane of a load lock chamber. It is a figure which shows the control system of a load lock chamber. It is a flowchart which shows operation | movement of a load lock chamber. It is a flowchart which shows operation | movement of a load lock chamber. It is a flowchart which shows operation | movement of a load lock chamber. It is a figure which shows the modification of a load lock chamber.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Indexer block 2 Antireflection film processing block 3 Resist film processing block 4 Development processing block 5 Interface block 6 Exposure device 201 Chamber 203 Heating plate 205 Vacuum pump 206 Noble gas supply nozzle 216 Cooling device 218 Heater 220 Cooling piping 220a Cooling Media circulation device 500 Substrate processing device LC Local controller RL Load lock chamber SE1 Pressure sensor SE2 Noble gas concentration sensor

Claims (12)

A load lock device used for loading or unloading a substrate with respect to a decompression processing apparatus that performs processing on a substrate under a pressure lower than atmospheric pressure,
A housing that can accommodate a substrate and forms a sealed space;
Decompression means for decompressing the inside of the housing;
A load lock device comprising atmosphere replacement means for replacing the atmosphere in the housing with a rare gas before the pressure in the housing is reduced by the pressure reducing means. 2. The load lock chamber according to claim 1, wherein the atmosphere replacement means includes a rare gas supply means for supplying a rare gas into the casing. 3. The load lock device according to claim 2, wherein the atmosphere replacement means further includes a cooling means for liquefying or solidifying components in the atmosphere excluding the rare gas in the casing. 4. The load lock device according to claim 3, wherein the rare gas is helium gas. The load lock device according to claim 2, wherein the atmosphere replacement unit further includes an exhaust unit that discharges the atmosphere in the housing. The load lock device according to any one of claims 1 to 5, further comprising a case heating means for heating the case. The load lock device according to any one of claims 1 to 6, further comprising substrate heating means for heating the substrate accommodated in the housing. The load lock device according to any one of claims 1 to 7, further comprising a case cooling means for cooling the case when the inside of the case is depressurized by the pressure reducing means. A substrate processing apparatus disposed adjacent to a reduced pressure processing apparatus that processes a substrate under a pressure lower than atmospheric pressure,
A normal pressure processing section for processing the substrate under atmospheric pressure;
A delivery unit for delivering a substrate between the normal pressure treatment unit and the reduced pressure treatment apparatus;
The delivery unit is
Including a load lock device used for loading or unloading a substrate with respect to the decompression processing apparatus,
The load lock device includes:
A housing that can accommodate a substrate and forms a sealed space;
Decompression means for decompressing the inside of the housing;
A substrate processing apparatus comprising: an atmosphere replacement unit that replaces the atmosphere in the housing with a rare gas before the decompression unit decompresses the housing. A decompression processing device that performs processing on a substrate under a pressure lower than atmospheric pressure, and a load lock device that is used to carry in or out the substrate with respect to the decompression processing device,
The load lock device includes:
A housing that can accommodate a substrate and forms a sealed space;
Decompression means for decompressing the inside of the housing;
A substrate processing system, comprising: an atmosphere replacement unit that replaces the atmosphere in the housing with a rare gas before the decompression unit decompresses the housing. A delivery part for delivering the substrate to the reduced pressure processing apparatus;
The substrate processing system according to claim 10, wherein the load lock device is provided in the delivery unit. It further includes an atmospheric pressure processing unit for processing the substrate under atmospheric pressure,
12. The substrate processing apparatus according to claim 11, wherein the transfer unit transfers the substrate between the normal pressure processing unit and the decompression processing apparatus.

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