JP2008034455A - Equipment and method for processing substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide single wafer substrate processing equipment and a method for achieving high efficiency drying when a substrate is processed by single wafer processing while preventing condensation of organic solvent used in dry processing. <P>SOLUTION: A supporting section supports a sheet of substrate. An opposing member is arranged oppositely to one major surface of the substrate supported at the supporting section, and an ejection hole is formed in the surface opposing that substrate. A first supply means supplies vapor of organic solvent onto one major surface of the substrate by ejecting the vapor from the ejection hole through the opposing member. A heating means heats at least the opposing member. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly to a single wafer processing apparatus and a substrate processing method for performing a drying process for each substrate.

  Conventionally, in a substrate manufacturing process, after cleaning a substrate such as a chemical treatment with a chemical solution and a rinse treatment using a rinse solution such as pure water, an organic solvent such as isopropyl alcohol (hereinafter referred to as IPA) is used. 2. Description of the Related Art A substrate processing apparatus that supplies steam to the periphery of a substrate to perform a drying process is used. This drying treatment is a so-called Marangoni drying method that uses a difference in surface tension between the IPA vapor and the rinsing liquid in order to remove the rinsing liquid adhering to the substrate surface. The drying method using IPA is effective in preventing the collapse of the pattern formed on the substrate surface because of the low surface tension of IPA.

  In addition, a single-wafer type substrate processing apparatus that performs a drying process for each substrate is used. In this single wafer type substrate processing apparatus, a spin drying method is generally used in which the rinsing liquid adhering to the substrate is blown off by centrifugal force. Further, in the single-wafer type substrate processing apparatus, a rotagoni drying method has been developed which is a compromise between the Marangoni drying method and the spin drying method (see, for example, Patent Document 1). The wafer drying apparatus disclosed in Patent Document 1 supplies deionized water and IPA vapor from a plurality of nozzles to the vicinity of the rotation center on the upper surface of the rotating substrate. After that, by gradually moving the plurality of nozzles in the rotation radius direction (direction from the substrate center toward the outer edge) while rotating the substrate, the drying region expands in the direction from the rotation center of the substrate toward the outer edge of the substrate. Thus, the entire surface of the substrate is dried.

On the other hand, a batch-type substrate processing apparatus that collectively processes a plurality of substrates is also used (see, for example, Patent Document 2). The substrate processing apparatus disclosed in Patent Document 2 supplies IPA vapor to a plurality of substrates pulled up from a processing tank in which pure water is stored. In this process, the pure water adhering to the substrate is replaced with IPA, and the IPA is evaporated to dry the substrate.
JP 2004-128495 A JP 2002-299310 A

  However, in the drying method using IPA, when the vapor concentration of IPA is low, the surface tension of the liquid adhering to the substrate is not sufficiently lowered, so that the effect of IPA on pattern collapse becomes insufficient. For example, in the wafer drying apparatus disclosed in Patent Document 1 above, it is considered that IPA vapor is easily discharged from the substrate by the airflow generated by the rotation of the substrate and that the treatment is performed while supplying deionized water. As a result, IPA cannot be sufficiently dissolved in deionized water. That is, in the wafer drying apparatus, pattern collapse or a water mark tends to occur on the substrate. Therefore, in order to prevent the above problems, it is necessary to dissolve IPA with high efficiency with respect to the liquid on the substrate. As a result, high concentration IPA vapor is supplied. However, if high concentration IPA vapor is to be supplied onto the substrate, condensation tends to occur in the flow path for supplying the IPA, etc., and when condensation occurs near the substrate, the liquefied IPA falls onto the substrate. Will fall). Therefore, particles are generated on the substrate. In particular, condensation tends to occur at the nozzle portion that supplies IPA.

  On the other hand, although the substrate processing apparatus disclosed in Patent Document 2 is of a batch type, the piping is heated by supplying high-temperature nitrogen gas before supplying IPA vapor to prevent condensation of IPA. However, in the case of a batch-type substrate processing apparatus, the IPA vapor supply pipe and the substrate group are remote from each other, so that it is difficult to obtain a heat drying effect by the pipe heated to a high temperature.

  SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a single-wafer type substrate processing apparatus and substrate processing that realizes highly efficient drying while preventing condensation of organic solvent vapor used in the drying process when a single-wafer type substrate is dried. Is to provide a method.

In order to achieve the above object, the present invention has the following features.
The first invention is a single-wafer type substrate processing apparatus that processes substrates one by one. The substrate processing apparatus includes a support portion, a counter member, a first supply unit, and a heating unit. The support unit supports one substrate. The facing member is disposed to face one main surface of the substrate supported by the support portion, and a discharge hole is formed on the surface facing the substrate. A 1st supply means discharges the vapor | steam of an organic solvent from a discharge hole via an opposing member, and supplies it on one main surface of a board | substrate. The heating means heats at least the facing member.

  In a second aspect based on the first aspect, the heating means includes a second supply means. The second supply means supplies high-temperature nitrogen gas to the opposing member. The heating means warms the opposing member by supplying high-temperature nitrogen gas to the opposing member before the first supplying means supplies vapor of the organic solvent from the discharge hole onto the substrate. . Here, “high-temperature nitrogen gas” refers to nitrogen gas at least at room temperature or higher, for example, nitrogen gas heated to a temperature of 150 ° C. to 200 ° C.

  In a third aspect based on the first aspect, the first supply means discharges the vapor of isopropyl alcohol from the discharge hole via the opposing member and supplies the vapor onto one main surface of the substrate.

  In a fourth aspect based on the first aspect, the facing member is a hollow member having a plurality of discharge holes formed on the entire surface facing the substrate and having an internal space communicating with the discharge holes. The heating means includes a second supply means. The second supply means supplies high-temperature nitrogen gas to the internal space of the facing member. The first supply means supplies the organic solvent vapor onto the one main surface of the substrate by introducing the vapor of the organic solvent into the internal space and discharging it from the plurality of discharge holes. The heating means is configured so that, before the first supply means supplies the vapor of the organic solvent from the discharge holes, the second supply means guides the high-temperature nitrogen gas to the internal space and discharges it from the plurality of discharge holes, so that the opposing member Warm up.

  In a fifth aspect based on the first aspect, the facing member includes a porous material whose one surface is exposed on the surface facing the substrate. The pores of the porous material each function as a discharge hole. The heating means includes a second supply means. A 2nd supply means supplies high temperature nitrogen gas from the opposite side of the exposed surface of the porous material which an opposing member has. The first supply means guides the vapor of the organic solvent to the opposite side of the exposed surface of the porous material that the opposing member has, and discharges the vapor of the organic solvent from the pores exposed on the exposed surface, so that the one main surface of the substrate To supply. Before the first supply means supplies the vapor of the organic solvent from the pores onto the substrate, the second supply means guides the high-temperature nitrogen gas to the opposite side of the exposed surface of the porous material. The opposing member is heated by discharging from the pores exposed to the surface.

  In a sixth aspect based on the first aspect, the opposing member is a hollow member having one discharge hole at the center thereof and having an internal space not communicating with the discharge hole, from the internal space to the outside. It has at least one outlet for discharging. The heating means includes a second supply means. The second supply means supplies high-temperature nitrogen gas to the internal space of the facing member. The first supply means discharges the vapor of the organic solvent from the discharge hole through the counter member and supplies it onto the one main surface of the substrate. The heating means warms the opposing member by the second supply means guiding high-temperature nitrogen gas into the internal space and discharging it from the discharge port.

  The seventh invention is a single-wafer type substrate processing method for processing substrates one by one. The substrate processing method includes a supplying step and a heating step. The supplying step is arranged so as to face one main surface of one substrate supported by the support portion, and from the discharge hole to the organic solvent via a facing member having a discharge hole formed on the surface facing the substrate. The vapor is discharged and supplied onto one main surface of the substrate. In the heating step, at least the counter member is heated before supplying the vapor of the organic solvent from the discharge hole onto the substrate in the supply step.

  According to the first aspect of the invention, since the facing member that faces the supported substrate is heated, the substrate is also exposed to a high temperature atmosphere in the drying process. Therefore, a heat drying effect can be added in the drying process for the substrate, and the drying speed for the substrate is increased.

  According to the second aspect of the invention, it is possible to prevent condensation of the organic solvent in the counter member by heating the counter member before supplying the vapor of the organic solvent onto the substrate from the discharge hole of the counter member. it can. As a result, particles generated by condensation of the organic solvent in the vicinity of the substrate can be prevented. In addition, even when the vapor concentration of the organic solvent is thin and the surface tension of the liquid adhering to the substrate is not sufficiently lowered, it is possible to supply the organic solvent vapor with a high concentration to the substrate via the opposing member. It becomes. Therefore, it is possible to supply the vapor of the organic solvent at a concentration that can sufficiently reduce the surface tension of the liquid adhering to the substrate, so that the effect of the organic solvent on the pattern collapse of the substrate can be sufficiently obtained. Can do.

  According to the third aspect of the present invention, by supplying vapor of isopropyl alcohol to the substrate, it is possible to dry liquid such as pure water attached to the substrate with high efficiency while suppressing generation of water marks and adhesion of particles. it can.

  According to the fourth aspect of the invention, since the high temperature nitrogen gas is guided to the hollow space of the counter member and discharged from the discharge port provided on the entire surface, the entire surface of the counter member is heated, so that the substrate is dried. Increases speed. Further, since the vapor of the organic solvent is supplied from the discharge port provided on the entire surface of the opposing member, the vapor of the organic solvent can be uniformly supplied to the entire substrate.

  According to the fifth aspect of the invention, since the porous material is heated by supplying high-temperature nitrogen gas to the porous material, the drying speed for the substrate supported facing the porous material is increased. Will be faster. Further, since the vapor of the organic solvent is supplied from the pores exposed on the facing surface side of the porous material, the vapor of the organic solvent can be further uniformly supplied to the entire substrate.

  According to the sixth aspect of the invention, by supplying high-temperature nitrogen gas to the hollow space of the opposing member, the entire opposing member is heated, so that the drying rate for the substrate is increased. Further, since the vapor of the organic solvent is supplied from the discharge port provided in the center of the facing member, the vapor of the organic solvent can be efficiently supplied to a region extending from the center of the substrate.

  Moreover, according to the substrate processing method of this invention, the same effect as the substrate processing apparatus mentioned above can be acquired.

  A substrate processing apparatus according to the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing a schematic configuration of the substrate processing apparatus. FIG. 2 is a block diagram illustrating a control configuration of the substrate processing apparatus.

  In FIG. 1, the substrate processing apparatus includes a substrate holding unit 1, a counter member 2, a high-temperature nitrogen supply unit 3, an IPA (isopropyl alcohol) vapor supply unit 4, a chemical solution supply unit 5, and a rinse solution supply unit 6. The substrate processing apparatus shown in FIG. 1 is a so-called single-wafer type substrate processing apparatus that performs cleaning processing and drying processing for each substrate W such as a semiconductor wafer. Specifically, the substrate processing apparatus performs chemical processing for discharging a chemical liquid such as hydrofluoric acid on the surface of the substrate W on which a fine pattern is formed, and rinsing for discharging a rinsing liquid such as pure water (DIW) to the surface of the substrate W. A cleaning process is performed by a process or the like, and a drying process using an organic solvent such as IPA is performed on the substrate W wet with the rinse liquid. For example, the substrate W that can be processed by the substrate processing apparatus includes, in addition to a semiconductor wafer, a glass substrate for photomask, a glass substrate for liquid crystal display, a glass substrate for plasma display, and a substrate for optical disk.

  The substrate holding unit 1 rotates the substrate W to be subjected to a drying process or the like while holding the substrate W in a substantially horizontal posture with its main surface facing upward. As shown in FIG. 1, the substrate holding unit 1 includes a rotating column 11, a spin base 12, and a chuck pin 13. The rotating column 11 is arranged so that its rotation axis is directed in the vertical direction, and is connected to a chuck rotating mechanism 10 described later. The rotary support 11 can be rotated in the illustrated θ direction around the rotation axis by driving the chuck rotating mechanism 10. A spin base 12 having a disk shape is connected to the upper end portion of the rotary support 11, and is horizontally fixed so that the rotation axis of the rotary support 11 is at the center of the spin base 12. Then, according to the rotation operation of the rotary support 11, the spin base 12 also rotates about the disk center as a rotation axis. Near the peripheral edge of the spin base 12, a plurality of chuck pins 13 for holding the substrate W horizontally are erected. Note that three or more chuck pins 13 are preferably provided in order to securely hold the circular substrate W. The chuck pin 13 includes a support member that supports the periphery of the substrate W from below, and a holding member that holds the substrate W by pressing the outer peripheral end surface of the substrate W supported by the support member from the outside. The holding member is configured to be switchable between a pressing state in which the outer peripheral end surface of the substrate W is pressed and an open state in which the holding member is separated from the outer peripheral end surface of the substrate W.

  When the substrate W is carried into the spin base 12, the substrate W is placed on the support member with each holding member of each chuck pin 13 being opened. And after the board | substrate W is mounted, each holding member is made into a press state. Accordingly, the substrate holding unit 1 can hold the substrate W in a substantially horizontal posture with a predetermined interval from the spin base 12. Further, when the control unit 7 (see FIG. 2) drives the chuck rotating mechanism 10, the rotating column 11 and the spin base 12 rotate around the rotation axis. As a result, the substrate holding unit 1 can rotate around the rotation axis (that is, the θ direction in the drawing) while keeping the substrate W held horizontally.

  The chemical solution supply unit 5 supplies a chemical solution such as hydrofluoric acid to the upper surface of the substrate W held by the substrate holding unit 1. As shown in FIG. 1, the chemical liquid supply unit 5 includes a chemical liquid supply unit 51, a first opening / closing valve 52, and a chemical liquid nozzle 53. The chemical liquid nozzle 53 is connected to the chemical liquid supply unit 51 via the first opening / closing valve 52. The first opening / closing valve 52 is opened / closed according to a control command from the control unit 7. Therefore, when the first opening / closing valve 52 is opened based on the control command from the control unit 7, the chemical liquid supplied from the chemical liquid supply unit 51 is pumped toward the chemical liquid nozzle 53, and the chemical liquid is discharged from the chemical liquid nozzle 53. Is done. The chemical nozzle 53 is connected to a first nozzle moving mechanism 50 (see FIG. 2) that operates in accordance with a control command from the control unit 7. And the chemical | medical solution nozzle 53 moves between the discharge position which is upward from the rotation center of the horizontally mounted substrate W and the retreat position retracted to the side from the discharge position by driving the first nozzle moving mechanism 50. It is configured to be possible. Accordingly, the chemical nozzle 53 can move between the discharge position and the retracted position based on a control command from the control unit 7.

  The rinse liquid supply unit 6 discharges the rinse liquid onto the upper surface of the substrate W held by the substrate holding unit 1. In the present embodiment, pure water (DIW) is used as the rinse liquid, for example. The rinsing liquid supply unit 6 includes a pure water supply unit 61, a second opening / closing valve 62, and a rinsing nozzle 63. The rinse nozzle 63 is connected to the pure water supply unit 61 via the second opening / closing valve 62. The second opening / closing valve 62 is opened / closed according to a control command from the control unit 7. Therefore, when the second opening / closing valve 62 is opened based on the control command from the control unit 7, pure water supplied from the pure water supply unit 61 is pumped toward the rinse nozzle 63, and pure water is supplied from the rinse nozzle 63. Water is discharged. The rinse nozzle 63 is connected to a second nozzle moving mechanism 60 (see FIG. 2) that operates according to a control command from the control unit 7. The rinse nozzle 63 is moved between the discharge position located above the rotation center of the horizontally mounted substrate W and the retreat position retracted laterally from the discharge position by driving the second nozzle moving mechanism 60. It is configured to be possible. Therefore, the rinse nozzle 63 can move between the discharge position and the retracted position based on a control command from the control unit 7.

  The facing member 2 is a disk-shaped member having a discharge hole on the lower surface thereof, and is disposed above the substrate holding unit 1. The lower surface of the facing member 2 is a facing surface that faces substantially parallel to the upper surface of the substrate W held by the substrate holding unit 1, and is formed to be equal to or larger than the main surface of the substrate W. The detailed internal structure of the facing member 2 will be described later.

  The opposing member 2 is connected to an opposing member lifting mechanism 20 that operates according to a control command from the control unit 7. Then, the opposing member lifting mechanism 20 is opposed to an opposing position that opposes the opposing surface of the opposing member 2 close to the upper surface of the substrate W held by the substrate holding unit 1 in accordance with a control command from the control unit 7. It is configured to be able to move up and down from the retreat position where it is retreated away from the substrate W upward from the position. Therefore, the facing member 2 can move between the facing position and the retracted position based on a control command from the control unit 7.

  The high temperature nitrogen supply unit 3 supplies high temperature nitrogen gas to the facing member 2. The high-temperature gas supplied from the high-temperature nitrogen supply unit 3 to the counter member 2 may be an inert gas, but nitrogen gas is used in this embodiment. The high-temperature nitrogen supply unit 3 includes a nitrogen supply unit 31, a third opening / closing valve 32, a heating unit 33, and a pipe 34. The nitrogen supply unit 31 is connected to the facing member 2 via the third opening / closing valve 32 and the pipe 34. The third opening / closing valve 32 is opened / closed according to a control command from the control unit 7. Therefore, when the third opening / closing valve 32 is opened based on the control command from the control unit 7, the nitrogen gas supplied from the nitrogen supply unit 31 is pumped through the pipe 34 toward the opposing member 2, and is described above. Nitrogen gas is discharged from the discharge hole or the like of the facing member 2. In addition, a heating unit 33 is provided in the middle of the route of the pipe led from the nitrogen supply unit 31 to the facing member 2. The heating unit 33 is configured by a heater or the like, and its operation is controlled in accordance with a control command from the control unit 7. By operating the heating unit 33, the nitrogen gas supplied from the nitrogen supply unit 31 to the facing member 2 can be heated to at least normal temperature or more. In addition, in order to prevent the vapor | steam of the organic solvent mentioned later from condensing inside the opposing member 2, the heating part 33 heats nitrogen gas to the temperature of 150 to 200 degreeC, and supplies it to the opposing member 2. FIG.

  The IPA vapor supply unit 4 supplies vapor of an organic solvent having an action of reducing the surface tension of the rinse liquid (pure water) to the opposing member 2 together with the inert gas using the inert gas as a carrier gas. In this embodiment, IPA is used as the organic solvent, for example, IPA vapor using nitrogen gas as a carrier gas. The IPA vapor supply unit 4 includes an IPA vapor supply unit 41, a fourth on-off valve 42, and a pipe 43. The IPA vapor supply unit 41 is connected to the facing member 2 via a fourth opening / closing valve 42 and a pipe 43. The fourth open / close valve 42 is opened / closed in accordance with a control command from the control unit 7. Therefore, when the fourth open / close valve 42 is opened based on the control command from the control unit 7, the IPA vapor supplied from the IPA vapor supply unit 41 is pumped through the pipe 43 toward the opposing member 2, and The IPA vapor is discharged from the discharge hole of the facing member 2 that has been made.

  With the above configuration, high temperature nitrogen gas and IPA vapor can be selectively supplied to the facing member 2. That is, when the third opening / closing valve 32 is opened based on the control command from the control unit 7 and the fourth opening / closing valve 42 is closed, the high-temperature nitrogen gas is pumped toward the facing member 2. As a result, the high-temperature nitrogen gas is discharged from the discharge hole or the like of the facing member 2. Further, when the third opening / closing valve 32 is closed and the fourth opening / closing valve 42 is opened based on the control command from the control unit 7, the IPA vapor is pumped toward the facing member 2. As a result, the IPA vapor is discharged from the discharge hole of the facing member 2.

  Next, a first example of the structure of the facing member 2 will be described with reference to FIGS. 3 and 4. FIG. 3 is a cross-sectional view showing the internal structure of the facing member 2 of the first example. FIG. 4 is a bottom external view showing the facing surface of the facing member 2 of the first example.

  3 and 4, the opposing member 2 in the first example has a main body 21 that is a disk-shaped hollow body. Inside the main body 21, a vacant chamber R <b> 1 communicating with the pipes 34 and 43 is formed. Further, when the facing member 2 is lowered to the facing position, a plurality of discharge holes arranged in a lattice pattern are formed on the lower surface of the main body 21 that is the facing surface facing the upper surface of the substrate W held by the substrate holding portion 1. Hn is formed. The empty room R1 is opened to the outside through the discharge hole Hn. Therefore, when the high-temperature nitrogen gas is introduced to the opposing member 2 through the pipe 34, the high-temperature nitrogen gas is supplied into the empty chamber R1 and discharged from the plurality of discharge holes Hn. That is, the main body 21 is heated by supplying the high-temperature nitrogen gas. On the other hand, when the IPA vapor is guided to the facing member 2 through the pipe 43, the IPA vapor is supplied into the empty chamber R1 and discharged from the plurality of discharge holes Hn. That is, by supplying the IPA vapor to the facing member 2 at the position where the facing member 2 is lowered to the facing position, an IPA vapor air flow covering the upper surface of the substrate W held by the substrate holding unit 1 can be formed. .

  Next, a substrate processing operation in the substrate processing apparatus will be described with reference to FIGS. FIG. 5 is a flowchart showing the operation of the substrate processing apparatus. FIG. 6 is a diagram illustrating a state in which the substrate processing apparatus is supplying pure water to the upper surface of the substrate W. FIG. 7 is a diagram illustrating a state in which the substrate processing apparatus is supplying IPA vapor to the upper surface of the substrate W.

  In FIG. 5, first, one substrate W is carried into the substrate processing apparatus (step S81). For example, an unprocessed substrate W is carried into the substrate processing apparatus by a substrate transport unit (not shown), and the substrate W is held by the substrate holding unit 1. Specifically, the control unit 7 operates the facing member lifting mechanism 20, the first nozzle moving mechanism 50, and the second nozzle moving mechanism 60 to move the facing member 2, the chemical solution nozzle 53, and the rinse nozzle 63 to the above. Retreat to the retreat position. Then, the substrate W is placed on the support member in a state where each holding member of each chuck pin 13 is opened, each holding member is pressed, and the substrate W is held horizontally on the substrate holding unit 1. The When the substrate W is carried in, the substrate processing apparatus is prepared so that each process can be started. For example, the operation of each supply unit (nitrogen supply unit 31, IPA vapor supply unit 41, chemical solution supply unit 51, pure water supply unit 61) is started. Then, the control unit 7 closes all the open / close valves 32, 42, 52, and 62 and starts the operation of the heating unit 33.

  Next, the control part 7 opens the 3rd on-off valve 32, and supplies high temperature nitrogen gas to the opposing member 2 (step S82). As a result, as shown in FIG. 6, the high-temperature nitrogen gas is introduced into the vacant chamber R1 of the facing member 2 arranged at the retreat position, and the high-temperature nitrogen gas is discharged from the plurality of discharge holes Hn. And the opposing member 2 is heated by high temperature nitrogen gas.

  Next, the control unit 7 operates the first nozzle moving mechanism 50 to move the chemical nozzle 53 to the discharge position, and drives the chuck rotating mechanism 10 to move the substrate W to a predetermined rotation speed (for example, 200 rpm to 200 rpm). 300 rpm) (step S83). And the control part 7 opens the 1st on-off valve 52, and supplies a chemical | medical solution from the chemical | medical solution nozzle 53. FIG. Thereby, the chemical liquid supplied from the chemical liquid nozzle 53 to the upper surface of the substrate W spreads to the upper surface by the centrifugal force generated by the rotation of the substrate W, and the entire upper surface of the substrate W is processed with the chemical liquid (step S84).

  When the chemical liquid processing is completed, the control unit 7 closes the first opening / closing valve 52 to stop the chemical liquid supply from the chemical liquid nozzle 53 and operates the first nozzle moving mechanism 50 to move the chemical liquid nozzle 53 to the retracted position. Move. Next, the control unit 7 operates the second nozzle moving mechanism 60 to move the rinse nozzle 63 to the discharge position. Then, the control unit 7 opens the second opening / closing valve 62 and supplies pure water from the rinse nozzle 63. As a result, the pure water supplied from the rinse nozzle 63 to the upper surface of the substrate W spreads to the upper surface by the centrifugal force caused by the rotation of the substrate W, and the entire upper surface of the substrate W is rinsed (step S85; state of FIG. 6). . As a result, the chemical solution adhering to the entire upper surface of the substrate W is washed away with pure water.

  When the rinsing process for a predetermined time is completed, the control unit 7 closes the second opening / closing valve 62 to stop the supply of pure water from the rinsing nozzle 63 and operates the second nozzle moving mechanism 60 to move the rinsing nozzle 63. Move to the retracted position. Next, the controller 7 controls the driving of the chuck rotation mechanism 10 to change the rotation of the substrate W to a low speed rotation (for example, 20 rpm) (step S86). In the operation of step S86, the control unit 7 may stop the rotation of the substrate W. And the control part 7 closes the 3rd on-off valve 32, and stops supply of the high temperature nitrogen gas to the opposing member 2 (step S87).

  Next, the control part 7 operates the opposing member raising / lowering mechanism 20, and lowers the opposing member 2 to the said opposing position (step S88). And the control part 7 opens the 4th on-off valve 42, and supplies IPA vapor | steam to the opposing member 2 (step S89). As a result, as shown in FIG. 7, the IPA vapor is guided to the vacant chamber R1 of the facing member 2 arranged at the facing position, and the IPA vapor is discharged from the plurality of discharge holes Hn toward the upper surface of the substrate W. . Then, an air current of IPA vapor is formed that covers the upper surface of the substrate W facing and facing the facing surface of the facing member 2. As a result, the entire upper surface of the substrate W is exposed to an atmosphere containing IPA vapor, and the IPA vapor is condensed on the upper surface of the substrate W and replaced with pure water adhering to the upper surface. Thereafter, the control unit 7 controls the chuck rotating mechanism 10 to rotate the substrate W at a high speed (spin drying rotation; for example, 1000 rpm to 3000 rpm) (step S90). As a result, the IPA condensed and adhering to the upper surface of the substrate W is shaken off, and the substrate W is dried.

  Here, when high-concentration IPA vapor is supplied to the vacant chamber R1 of the facing member 2, it is conceivable that the IPA vapor is condensed in the vacant chamber R1. However, since the opposing member 2 is heated by the high-temperature nitrogen gas during the operations from Steps S82 to S87, the saturated vapor pressure of IPA in the vacant chamber R1 increases as the temperature rises. Therefore, it is possible to prevent the condensation of IPA in the vacant space R1 of the facing member 2, and to supply high concentration IPA vapor.

  Further, since the facing member 2 that faces the substrate W held in the substrate holding unit 1 in the vicinity is heated, the substrate W is also exposed to a high temperature atmosphere. Accordingly, a heat drying effect can be added in the drying process for the substrate W, and the drying speed for the substrate W is increased.

  When the drying process of the substrate W is completed, the control unit 7 controls the chuck rotating mechanism 10 to stop the rotation of the substrate W (step S91). Next, the processed substrate W is unloaded from the substrate processing apparatus (step S92). Specifically, the control unit 7 operates the opposing member lifting mechanism 20 to retract the opposing member 2 to the retracted position. Then, each holding member of each chuck pin 13 is opened, and the substrate W placed on the support member is unloaded from the substrate processing apparatus.

  As described above, in the substrate processing apparatus according to this embodiment, the counter member 2 is heated before the IPA vapor is supplied from the discharge hole Hn of the counter member 2, thereby preventing condensation of IPA in the counter member 2. can do. As a result, particles generated by the condensation of IPA in the vicinity of the substrate W can be prevented. Further, the IPA vapor is easily discharged from the substrate W due to the air flow generated by rotating the substrate W, and the surface tension of the liquid adhering to the substrate W is not sufficiently lowered because the IPA vapor concentration is reduced. Even at times, it becomes possible to supply high concentration IPA vapor to the upper surface of the substrate W via the opposing member 2. Therefore, since it is possible to supply IPA vapor having a concentration that can sufficiently reduce the surface tension of the liquid adhered on the substrate W, the effect of IPA on the pattern collapse of the substrate W can be sufficiently obtained. it can. Furthermore, since the opposing member 2 that faces and opposes the substrate W held by the substrate holder 1 is heated, the substrate W is also exposed to a high temperature atmosphere in the drying process. Accordingly, a heat drying effect can be added in the drying process for the substrate W, and the drying speed for the substrate W is increased.

  Next, a second example of the structure of the facing member 2 will be described with reference to FIGS. FIG. 8 is a cross-sectional view showing the internal structure of the facing member 2 of the second example. FIG. 9 is a bottom external view showing the facing surface of the facing member 2 of the second example.

  8 and 9, the facing member 2 in the second example has a disk-shaped main body 22 and a porous member 23. The porous member 23 has a disk shape, and one main surface thereof is exposed on the lower surface side (that is, the opposite surface side facing the upper surface of the substrate W held by the substrate holding portion 1) except for the outer edge portion. is doing. The porous member 23 is fixed to the main body 22 such that the outer edge portion, the other main surface, and the side surface are in contact with the inner wall of the main body 22. For the porous member 23, a porous material resistant to IPA, hydrofluoric acid, or the like is used. For example, a porous material made of a plastic material such as a fluorine resin, a ceramic material, or polyethylene is used. As a result, the main surfaces of the porous member 23 communicate with each other through a large number of pores formed inside the porous member 23.

  The pipes 34 and 43 connected to the facing member 2 communicate with the other main surface side of the porous member 23 through connection ports provided on the upper surface side of the main body 22. More specifically, the pipe 43 through which the IPA vapor is guided is connected to a connection port provided at the center on the upper surface side of the main body 22 and communicates with the center portion on the other main surface side of the porous member 23. Further, the pipe 34 through which the high-temperature nitrogen gas is guided is connected to a connection port on the upper surface side of the main body 22 provided at a position different from the connection port of the pipe 43, and communicates with the other main surface side of the porous member 23. To do. Therefore, when high-temperature nitrogen gas is guided to the opposing member 2 through the pipe 34, the high-temperature nitrogen gas is supplied to the other main surface side of the porous member 23 and passes through the pores inside the porous member 23. On the other hand, it is discharged from the main surface side (main surface exposed on the opposite surface side). That is, the main body 22 and the porous member 23 are heated by supplying the high-temperature nitrogen gas. On the other hand, when the IPA vapor is guided to the opposing member 2 through the pipe 43, the IPA vapor is supplied to the other main surface side of the porous member 23 and passes through the pores inside the porous member 23 to face the opposing surface. It is discharged from the main surface exposed to the side. That is, by supplying the IPA vapor to the facing member 2 at the position where the facing member 2 is lowered to the facing position, an IPA vapor air flow covering the upper surface of the substrate W held by the substrate holding unit 1 can be formed. .

  As described above, even when the facing member 2 in the second example is used, the facing member 2 (the main body 22 and the porous member) are operated during the operations from Steps S82 to S87 by performing the same processing as the above-described substrate processing operation. Since the material member 23) is heated by the high-temperature nitrogen gas, it is possible to prevent the IPA condensation on the facing member 2 and to supply high-concentration IPA vapor. In addition, since the facing member 2 (particularly the porous member 23) facing the substrate W held in the substrate holding portion 1 in the vicinity is heated, the substrate W is also exposed to a high temperature atmosphere. Accordingly, a heat drying effect can be added in the drying process for the substrate W, and the drying speed for the substrate W is increased.

  Next, a third example of the structure of the facing member 2 will be described with reference to FIGS. In addition, FIG. 10 is sectional drawing which shows the internal structure in the opposing member 2 of a 3rd example. FIG. 11 is a bottom external view showing the facing surface of the facing member 2 of the third example.

  10 and 11, the facing member 2 in the third example has a disk-shaped main body 24. The main body 24 has one discharge port Hc at the center of the lower surface and one central connection port at the center of the upper surface, and the discharge port Hc communicates with the central connection port so that the upper surface and the lower surface of the main body 24 are connected. A through-hole penetrating through the central portion is formed. Therefore, the main body 24 becomes a ring body having a through hole in the center of the disk. Further, a ring-shaped empty space R2 that does not communicate with the central through hole (the discharge port Hc and the central connection port) is formed inside the main body 24. The empty room R2 is opened to the outside through a plurality of exhaust ports formed on the side surface of the main body 24. In addition, a plurality of (for example, four) connection ports connected to the empty room R2 are provided on the upper surface of the main body 24.

  The pipes 34 and 43 connected to the facing member 2 are respectively connected to the central connection port provided on the upper surface side of the main body 24 and communicated with the discharge port Hc provided on the lower surface side. Moreover, the piping 34 has the branch piping 35 branched from the middle of the path | route. A fifth opening / closing valve 36 is provided in the middle of the route of the branch pipe 35, and the pipe 34 is also connected to a plurality of connection ports of the empty room R <b> 2 via the branch pipe 35 and the fifth opening / closing valve 36. The fifth open / close valve 36 is opened / closed in accordance with a control command from the control unit 7. Therefore, when the third on-off valve 32 (see FIG. 1) and the fifth on-off valve 36 are opened based on the control command from the control unit 7, the high-temperature nitrogen gas is guided to the empty room R2 and the discharge port Hc. Then, the high-temperature nitrogen gas guided to the vacant room R <b> 2 is discharged to the outside of the facing member 2 through a plurality of exhaust ports formed on the side surface of the main body 24. Further, the high-temperature nitrogen gas guided to the discharge port Hc is discharged below the facing member 2. That is, the main body 24 is heated by supplying the high-temperature nitrogen gas. On the other hand, when IPA vapor | steam is guide | induced to the opposing member 2 via the piping 43, the said IPA vapor | steam is discharged from the discharge port Hc provided in the opposing surface side via the center connection port. That is, by supplying the IPA vapor to the facing member 2 at the position where the facing member 2 is lowered to the facing position, an IPA vapor air flow covering the upper surface of the substrate W held by the substrate holding unit 1 can be formed. .

  When the facing member 2 in the third example is used, the fifth opening / closing valve 36 is further opened in step S82 in the substrate processing operation described above, and the fifth opening / closing valve 36 is further closed in step S87. Moreover, since the IPA vapor | steam is discharged only from the lower surface center part in the opposing member 2 in a 3rd example, it is preferable to set to 100 rpm, for example in the low speed rotation of the said step S86. As a result, even if the facing member 2 in the third example is used, the facing member 2 is heated by the high-temperature nitrogen gas during the operations from Steps S82 to S87, so that the condensation of IPA at the facing member 2 is performed. Can be prevented, and high-concentration IPA vapor can be supplied. Further, since the facing member 2 that faces the substrate W held in the substrate holding unit 1 in the vicinity is heated, the substrate W is also exposed to a high temperature atmosphere. Accordingly, a heat drying effect can be added in the drying process for the substrate W, and the drying speed for the substrate W is increased.

  In this embodiment, the IPA vapor is used as the vapor of the organic solvent. However, vapors of other alcohols such as ethyl alcohol and methyl alcohol may be used as the vapor of the organic solvent. Further, although nitrogen gas is used as the carrier gas, other inert gas may be used. Furthermore, although the high-temperature nitrogen gas is supplied from the high-temperature nitrogen supply unit 3 to the opposing member 2, other high-temperature inert gas may be supplied.

  Further, the IPA vapor supplied to the substrate W by the IPA vapor supply unit 4 may be normal temperature, or IPA vapor adjusted to a high temperature or the like may be supplied to the substrate W.

  Moreover, although the said substrate processing apparatus was a processing apparatus which performs a chemical | medical solution process, a rinse process, and a drying process as a series of operation | movement, you may perform a chemical | medical solution process and a rinse process with another apparatus. In this case, the substrate processing apparatus of the present invention is applied as a substrate drying apparatus that performs a drying process on the substrate after the rinsing process.

  The substrate processing apparatus and the substrate processing method according to the present invention can achieve high-efficiency drying by preventing the condensation of the vapor of the organic solvent used in the drying process, such as a single wafer type substrate drying apparatus and a substrate drying method. Useful as.

The figure which shows schematic structure of the substrate processing apparatus which concerns on one Embodiment of this invention. The block diagram which shows the control structure of the substrate processing apparatus of FIG. Sectional drawing which shows the internal structure in the opposing member 2 of a 1st example Bottom view showing the facing surface of the facing member 2 of the first example The flowchart which shows operation | movement of the substrate processing apparatus of FIG. The figure which shows the state which the substrate processing apparatus of FIG. 1 supplies the pure water to the upper surface of the board | substrate W 1 is a diagram showing a state in which the substrate processing apparatus of FIG. 1 supplies IPA vapor to the upper surface of a substrate W. Sectional drawing which shows the internal structure in the opposing member 2 of a 2nd example Bottom external view showing the facing surface of the facing member 2 of the second example Sectional drawing which shows the internal structure in the opposing member 2 of a 3rd example Bottom view showing the facing surface of the facing member 2 of the third example

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Substrate holding | maintenance part 10 ... Chuck rotation mechanism 11 ... Rotary support | pillar 12 ... Spin base 13 ... Chuck pin 2 ... Opposing member 20 ... Opposing member raising / lowering mechanism 21, 22, 24 ... Main body 23 ... Porous member 3 ... High temperature nitrogen supply part 31 ... Nitrogen supply unit 32 ... 3rd on-off valve 33 ... Heating part 34, 43 ... Pipe 35 ... Branch pipe 36 ... 5th on-off valve 4 ... IPA steam supply part 41 ... IPA steam supply unit 42 ... 4th on-off valve 5 ... Chemical solution supply unit 50 ... first nozzle moving mechanism 51 ... chemical solution supply unit 52 ... first opening / closing valve 53 ... chemical solution nozzle 6 ... rinsing solution supply unit 60 ... second nozzle moving mechanism 61 ... pure water supply unit 62 ... second opening / closing valve 63 ... Rinse nozzle 7 ... Control unit

Claims (7)

A single-wafer type substrate processing apparatus for processing substrates one by one,
A support for supporting one substrate;
A facing member that is disposed to face one main surface of the substrate supported by the support portion, and that has discharge holes formed in a surface facing the substrate;
First supply means for discharging the vapor of the organic solvent from the discharge hole and supplying the vapor onto the one main surface of the substrate through the opposing member;
A substrate processing apparatus, comprising: a heating unit that heats at least the facing member. The heating means includes second supply means for supplying high-temperature nitrogen gas to the facing member,
The heating means is configured such that the second supply means supplies high-temperature nitrogen gas to the counter member before the first supply means supplies the vapor of the organic solvent from the discharge hole onto the substrate. The substrate processing apparatus according to claim 1, wherein the counter member is heated.   The substrate processing apparatus according to claim 1, wherein the first supply unit discharges vapor of isopropyl alcohol from the discharge hole and supplies the vapor onto one main surface of the substrate through the facing member. The counter member is a hollow member having a plurality of the discharge holes formed on the entire surface facing the substrate and having an internal space communicating with the discharge holes.
The heating means includes second supply means for supplying high-temperature nitrogen gas to the internal space of the facing member,
The first supply means supplies the organic solvent vapor onto the one main surface of the substrate by introducing the vapor of the organic solvent into the internal space and discharging it from the plurality of discharge holes.
Before the first supply means supplies the vapor of the organic solvent from the discharge holes, the second supply means introduces a high-temperature nitrogen gas into the internal space from the plurality of discharge holes. The substrate processing apparatus according to claim 1, wherein the opposing member is heated by discharging. The facing member includes a porous material whose one surface is exposed on a surface facing the substrate,
The pores of the porous material function as the discharge holes, respectively.
The heating means includes second supply means for supplying high-temperature nitrogen gas from the opposite side of the exposed surface of the porous material of the facing member,
The first supply means guides the vapor of the organic solvent to the opposite side of the exposed surface of the porous material of the facing member, and discharges the vapor of the organic solvent from the pores exposed on the exposed surface. On one main surface of the
The heating means may be configured such that the second supply means has a high temperature nitrogen on the opposite side of the exposed surface of the porous material before the first supply means supplies the vapor of the organic solvent from the pores onto the substrate. The substrate processing apparatus according to claim 1, wherein the counter member is heated by guiding gas and discharging it from the pores exposed on the exposed surface. The opposing member is a hollow member having one discharge hole at the center thereof and having an internal space that does not communicate with the discharge hole, and has at least one discharge port that discharges from the internal space to the outside.
The heating means includes second supply means for supplying high-temperature nitrogen gas to the internal space of the facing member,
The first supply means discharges the vapor of the organic solvent from the discharge hole through the opposing member, and supplies the vapor onto the one main surface of the substrate.
2. The substrate processing apparatus according to claim 1, wherein the heating unit heats the opposing member by causing the second supply unit to introduce high-temperature nitrogen gas into the internal space and discharge the high-temperature nitrogen gas from the discharge port. A single wafer processing method for processing substrates one by one,
Vapor of the organic solvent is discharged from the discharge hole through a counter member that is disposed to face one main surface of the single substrate supported by the support portion and has a discharge hole formed on the surface facing the substrate. A supply step for supplying the first main surface of the substrate;
And a heating step of heating at least the counter member before supplying the vapor of the organic solvent from the discharge hole onto the substrate in the supply step.

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