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JP2008028247A - Substrate processing method and substrate processing apparatus - Google Patents

Substrate processing method and substrate processing apparatus Download PDF

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Publication number
JP2008028247A
JP2008028247A JP2006201040A JP2006201040A JP2008028247A JP 2008028247 A JP2008028247 A JP 2008028247A JP 2006201040 A JP2006201040 A JP 2006201040A JP 2006201040 A JP2006201040 A JP 2006201040A JP 2008028247 A JP2008028247 A JP 2008028247A
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Prior art keywords
substrate
posture
processing
cleaning
chamber
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Inventor
Hideto Yamaoka
英人 山岡
Takuya Zushi
卓哉 厨子
Mitsuaki Yoshitani
光明 芳谷
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Dainippon Screen Manufacturing Co Ltd
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Dainippon Screen Manufacturing Co Ltd
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Priority to JP2006201040A priority Critical patent/JP2008028247A/en
Priority to TW096123286A priority patent/TW200818380A/en
Priority to CN2007101373080A priority patent/CN101114578B/en
Priority to KR1020070073891A priority patent/KR100866001B1/en
Publication of JP2008028247A publication Critical patent/JP2008028247A/en
Abandoned legal-status Critical Current

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    • H10P72/0406
    • H10P52/00
    • H10P72/0464
    • H10P72/3202
    • H10P72/3211

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Weting (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

【課題】処理むらの発生を防止しつつ効率良く基板の処理を進める。
【解決手段】現像処理室3において水平姿勢の基板に対して現像液を供給することにより現像処理を施した後、洗浄処理室4において傾斜姿勢の基板Sに対して洗浄液を供給することにより洗浄処理を行う。その際、現像処理後、基板Sを現像処理室3において水平姿勢から仮傾斜姿勢(洗浄処理に適した基板Sの傾斜姿勢よりも斜度の小さい姿勢)に変換し、この仮傾斜姿勢の状態で基板Sを現像処理室3から洗浄処理室4に搬送する。そして、洗浄処理室4において、基板Sの姿勢を仮傾斜姿勢から前記本傾斜姿勢に変換して洗浄処理を行うようにした。
【選択図】図1
A substrate is efficiently processed while preventing occurrence of processing unevenness.
After developing a developing solution by supplying a developing solution to a horizontally oriented substrate in the developing treatment chamber, cleaning is performed by supplying a cleaning solution to the substrate in an inclined posture in a cleaning processing chamber. Process. At this time, after the development processing, the substrate S is converted from a horizontal posture to a temporary inclined posture (an posture having a lower inclination than the inclined posture of the substrate S suitable for the cleaning process) in the development processing chamber 3, and the state of the temporary inclined posture is obtained. Then, the substrate S is transferred from the development processing chamber 3 to the cleaning processing chamber 4. Then, in the cleaning processing chamber 4, the cleaning process is performed by changing the posture of the substrate S from the temporary inclined posture to the main inclined posture.
[Selection] Figure 1

Description

本発明は、液晶表示器等のFPD(Flat Panel Display)用ガラス基板や半導体基板などの基板に対して現像液、エッチング液などの処理液、およびリンス液などの洗浄液を供給して処理を行う基板処理方法および基板処理装置に関するものである。   The present invention performs processing by supplying a processing solution such as a developing solution, an etching solution, and a cleaning solution such as a rinsing solution to a substrate such as an FPD (Flat Panel Display) glass substrate such as a liquid crystal display or a semiconductor substrate. The present invention relates to a substrate processing method and a substrate processing apparatus.

従来から、基板の処理装置(方法)として、基板を搬送しながら、
(1)水平姿勢の基板に処理液を供給することにより当該基板上に液層を形成した状態で処理を行う工程(液層形成工程)と、
(2)基板の姿勢を傾斜姿勢に変換する工程(姿勢変換工程)と、
(3)傾斜姿勢の基板に対して洗浄液を供給して洗浄する工程(洗浄工程)と、
を連続的に実施するようにしたものが知られている(例えば特許文献1)。
Conventionally, as a substrate processing apparatus (method), while transporting a substrate,
(1) A process (liquid layer forming process) of performing processing in a state where a liquid layer is formed on the substrate by supplying the processing liquid to the substrate in a horizontal posture;
(2) a step of converting the posture of the substrate into an inclined posture (posture changing step);
(3) supplying a cleaning solution to the substrate in an inclined posture and cleaning it (cleaning step);
Is known to be implemented continuously (for example, Patent Document 1).

このような装置は、例えば基板の現像処理を行う装置として広く適用されている。つまり、水平姿勢の基板上に現像液の液層を形成して現像処理を進め、その後、基板を傾斜姿勢に変換してリンス液を基板に沿って流下させながら洗浄することにより、現像液とリンス液との置換効率が向上し、効率的に洗浄処理が進められるようになっている。   Such an apparatus is widely applied as an apparatus for developing a substrate, for example. That is, a developer liquid layer is formed on a horizontal substrate to proceed with the development process, and then the substrate is converted into an inclined posture and washed with the rinse liquid flowing down along the substrate. The efficiency of replacement with the rinsing liquid is improved, and the cleaning process can be carried out efficiently.

ところで、この種の基板処理装置では、基板の生産コストの削減および資源の有効利用の観点から処理液を再使用することが行われており、現像処理を行う上記装置では、傾斜姿勢への基板の変換(姿勢変換工程)を予め現像部(室)で行うことにより、基板上の現像液を流下させて回収し、再使用することが行われている。
特開平11−87210公報
By the way, in this type of substrate processing apparatus, the processing liquid is reused from the viewpoint of reduction of the production cost of the substrate and effective use of resources. By performing the conversion (posture changing process) in advance in the developing section (chamber), the developer on the substrate is caused to flow down and collected for reuse.
JP-A-11-87210

ところが、上記のように現像処理後、基板の姿勢を洗浄処理に適した姿勢に変換してから基板を現像部から洗浄部に搬入する場合には、現像液の流下により基板の上位側で乾燥が生じ易くなり、洗浄処理が開始されるまでの間に、基板の上位側と下位側との間に処理の進行度合いに差が生じる、いわゆる現像むらが発生することが考えられる。特に、上位側と下位側との高低差が大きくなる大型の基板ではよりその発生頻度が高くなると考えられる。   However, when the substrate is transferred from the developing unit to the cleaning unit after the development processing is changed to a posture suitable for the cleaning processing as described above, it is dried on the upper side of the substrate by the flow of the developing solution. It is conceivable that so-called uneven development occurs in which a difference in the progress of the process occurs between the upper side and the lower side of the substrate before the cleaning process is started. In particular, it is considered that the frequency of occurrence is higher in a large-sized substrate in which a difference in height between the upper side and the lower side is large.

そこで、基板の姿勢変換後、速やかに基板を洗浄部に搬送して洗浄処理を開始することによって、基板の乾燥を防止することが考えられているが、この場合には、基板を受け入れる洗浄部側でも基板の搬送速度を高めることが必要となり、いきおい洗浄部での処理時間が短くなり現像液とリンス液との置換効率が損なわれるという弊害がある。また、搬送速度を高めることで基板に与えるダメージも増加する可能性があり、得策とは言えない。   Therefore, it is considered to prevent the substrate from drying by quickly transporting the substrate to the cleaning unit and starting the cleaning process after changing the posture of the substrate. In this case, the cleaning unit receiving the substrate is considered. Also on the side, it is necessary to increase the substrate conveyance speed, and the processing time in the swift cleaning section is shortened, so that the replacement efficiency between the developer and the rinsing liquid is impaired. Further, there is a possibility that damage to the substrate is increased by increasing the conveyance speed, which is not a good idea.

本発明は、上記の事情に鑑みてなされたものであり、基板の搬送速度を特に高めることなく、いわゆる処理むらの発生を防止しつつ効率良く基板の処理を進めることを目的とするものである。   The present invention has been made in view of the above circumstances, and an object of the present invention is to efficiently process a substrate while preventing the occurrence of so-called processing unevenness without particularly increasing the conveyance speed of the substrate. .

上記課題を解決するために、本発明は、基板を搬送しながら、第1処理部において水平姿勢の基板に対して処理液を供給する第1処理と、第2処理部において傾斜姿勢の基板に対して処理液を供給する第2処理とを順次行う基板処理方法であって、前記第1処理後、基板を水平姿勢から所定の傾斜姿勢であって、かつ前記第2処理に適した姿勢として予め定められた本傾斜姿勢よりも斜度の小さい仮傾斜姿勢に変換する第1姿勢変換工程と、この仮傾斜姿勢の基板を第1処理部から第2処理部に搬送する搬送工程と、第2処理部において基板の姿勢を前記仮傾斜姿勢から前記本傾斜姿勢に変換する第2姿勢変換工程と、第2姿勢変換工程の後、本傾斜姿勢の基板に対して前記第2処理を行う基板処理工程と、を有するものである(請求項1)。   In order to solve the above problems, the present invention provides a first process for supplying a processing liquid to a substrate in a horizontal posture in a first processing unit while transporting the substrate, and a substrate in an inclined posture in a second processing unit. A substrate processing method for sequentially performing a second process of supplying a processing liquid to the substrate, wherein after the first process, the substrate is set to a predetermined tilted attitude from a horizontal attitude and suitable for the second process. A first posture converting step for converting to a temporary inclined posture having a lower inclination than a predetermined main inclined posture; a conveying step for transferring a substrate in the temporary inclined posture from the first processing unit to the second processing unit; A second posture conversion step for converting the posture of the substrate from the temporary tilt posture to the main tilt posture in the two processing units; and a substrate that performs the second processing on the substrate in the main tilt posture after the second posture conversion step. And a processing step (claim 1).

このように、第1処理後、第2処理部へ搬入されるまでの基板の姿勢を第2処理に適した本傾斜姿勢よりも斜度が小さい傾斜姿勢(仮傾斜姿勢)とするようにすれば、基板上の処理液を流下させながらもその乾燥を抑えることが可能となる。つまり、仮傾斜姿勢の斜度を、現像液が流下し得る範囲で可及的に小さく設定しておくことで、基板表面の乾燥を抑えることが可能となる。そして、第2処理部では、基板を理想的な斜度に傾けた状態(本傾斜姿勢)で第2処理を行うため、当該処理を効率的に進めることもできる。   As described above, the posture of the substrate after the first processing until it is carried into the second processing unit is set to a tilted posture (temporary tilted posture) having a smaller inclination than the main tilted posture suitable for the second processing. In this case, it is possible to suppress the drying of the processing liquid on the substrate while flowing down. That is, drying of the substrate surface can be suppressed by setting the inclination of the temporary inclined posture as small as possible within a range in which the developer can flow down. In the second processing unit, the second processing is performed in a state where the substrate is tilted at an ideal inclination (mainly tilted posture). Therefore, the processing can be efficiently advanced.

この方法においては、仮傾斜姿勢で搬送される基板に対して前記第2処理を前記基板処理工程に先行して行う第1先行処理工程を有するのが好適である(請求項2)。   In this method, it is preferable to include a first preceding processing step in which the second processing is performed prior to the substrate processing step with respect to the substrate transported in a temporary inclined posture.

また、前記基板処理工程に先立ち、前記第2姿勢変換工程において姿勢変換中の基板に対して前記第2処理を行う第2先行処理工程を有するのも有効である(請求項3)。   In addition, prior to the substrate processing step, it is also effective to have a second preceding processing step for performing the second processing on the substrate whose posture is being changed in the second posture changing step.

これらの方法によると、本傾斜姿勢ではないものの傾斜姿勢の基板に対して先行して第2処理を施すことで一定の処理効果を得ることができ、また、早期に第2処理を開始するため基板表面の乾燥をより確実に抑えることが可能となる。   According to these methods, it is possible to obtain a certain processing effect by performing the second process in advance on the substrate in the inclined posture although not in the main inclined posture, and to start the second processing at an early stage. It becomes possible to more reliably suppress drying of the substrate surface.

上記の方法においては、前記第1姿勢変換工程における基板の姿勢変換の際に、基板の姿勢を前記仮傾斜姿勢よりも斜度の小さい傾斜姿勢で一旦保持し、この後、前記仮傾斜姿勢に変換するのが好適である(請求項4)。   In the above method, the substrate posture is temporarily held at a tilt posture having a lower inclination than the temporary tilt posture at the time of the substrate posture change in the first posture changing step, and thereafter, the temporary tilt posture is changed to the temporary tilt posture. It is preferable to convert (Claim 4).

この方法によれば、基板を水平姿勢から傾斜姿勢へ変換する際の処理液の流動が緩やかになり、いわゆる流れむら(流路むら)の発生を抑制することが可能となる。   According to this method, the flow of the processing liquid when the substrate is converted from the horizontal posture to the tilted posture becomes gentle, and so-called flow unevenness (flow path unevenness) can be suppressed.

一方、本発明に係る基板処理装置は、基板の搬送方向に、水平姿勢の基板に処理液を供給して第1処理を実施する第1処理部と、傾斜姿勢の基板に処理液を供給して第2処理を実施する第2処理部とが並び、基板に対して前記第1処理および第2処理を順次行う基板処理装置において、前記第1処理部に配備され、第1処理後、基板を水平姿勢から所定の傾斜姿勢であって、かつ前記第2処理に適した姿勢として予め定められた本傾斜姿勢よりも斜度の小さい仮傾斜姿勢に変換する第1姿勢変換手段と、基板を前記仮傾斜姿勢のままで第1処理部から第2処理部に搬送する傾斜搬送手段と、前記第2処理部にそれぞれ配備され、基板の姿勢を前記仮傾斜姿勢から前記本傾斜姿勢に変換する第2姿勢変換手段、およびこの第2姿勢変換手段により本傾斜姿勢に変換された基板に対して処理液を供給する処理液供給手段と、を備えているものである(請求項5)。   On the other hand, a substrate processing apparatus according to the present invention supplies a processing liquid to a substrate in an inclined posture, and a first processing unit that performs the first processing by supplying the processing liquid to the substrate in a horizontal posture in the substrate transport direction. In the substrate processing apparatus that sequentially arranges the first processing and the second processing on the substrate, the second processing portion that performs the second processing is arranged in the first processing portion, and after the first processing, the substrate A first attitude converting means for converting the horizontal attitude from a horizontal attitude to a provisional inclination attitude having a predetermined inclination attitude and an inclination smaller than the main inclination attitude predetermined as the attitude suitable for the second processing; Inclined transport means for transporting from the first processing unit to the second processing unit while maintaining the temporary tilted posture, and the second processing unit, respectively, convert the posture of the substrate from the temporary tilted posture to the main tilted posture. By the second posture changing means and the second posture changing means A processing liquid supplying means for supplying a processing liquid for the converted substrate in this inclined position in which has a (claim 5).

この装置によると、水平姿勢の基板に処理液が供給されることにより第1処理が施され、この第1処理の終了後、第1姿勢変換手段により基板の姿勢が水平姿勢から仮傾斜姿勢に変換される。この第1処理および基板の姿勢変換は第1処理部において行われる。そして、基板が仮傾斜姿勢のまま傾斜搬送手段により第1処理部から第2処理部に搬送された後、第2姿勢変換手段により基板の姿勢が仮傾斜姿勢から本傾斜姿勢に変換され、この変換後、処理液供給手段により当該基板に処理液が供給されて第2処理が行われることとなる。そのため、請求項1に係る基板処理方法を好適に実施することが可能となる。   According to this apparatus, the first processing is performed by supplying the processing liquid to the substrate in the horizontal posture, and after the first processing is finished, the posture of the substrate is changed from the horizontal posture to the temporary inclined posture by the first posture changing means. Converted. The first processing and the orientation change of the substrate are performed in the first processing unit. Then, after the substrate is transported from the first processing unit to the second processing unit by the tilt transport unit in the temporary tilt posture, the posture of the substrate is converted from the temporary tilt posture to the main tilt posture by the second posture conversion unit. After the conversion, the processing liquid is supplied to the substrate by the processing liquid supply means, and the second processing is performed. Therefore, the substrate processing method according to claim 1 can be suitably performed.

この装置おいては、前記第2処理部に、前記処理液供給手段による処理液の供給に先立ち、仮傾斜姿勢で搬送されてくる基板に対して前記第2処理用の処理液を供給する第1先行処理液供給手段が配備されているのが好適である(請求項6)。   In this apparatus, prior to the supply of the processing liquid by the processing liquid supply means to the second processing section, the processing liquid for the second processing is supplied to the substrate transported in a temporary inclined posture. It is preferable that one preceding processing liquid supply means is provided (Claim 6).

また、前記第2処理部に、前記処理液供給手段による処理液の供給に先立ち、前記第2姿勢変換手段による姿勢変換中の基板に対して前記第2処理用の処理液を供給する第2先行処理液供給手段が配備されているのが好適である(請求項7)。   Further, prior to supplying the processing liquid by the processing liquid supply means to the second processing section, a second processing liquid for supplying the second processing liquid to the substrate undergoing attitude change by the second attitude changing means is provided. It is preferable that a pretreatment liquid supply means is provided (claim 7).

これらの装置によると、本傾斜姿勢ではないものの傾斜姿勢の基板、あるいは仮傾斜姿勢から本傾斜姿勢へ変換中の基板に対して先行して第2処理を施すことができる。そのため、請求項2,3に係る基板処理方法を好適に実施することが可能となる。   According to these apparatuses, the second process can be performed in advance on a substrate that is not in the tilted posture but in a tilted posture or a substrate that is being converted from the temporary tilted posture to the tilted posture. Therefore, the substrate processing method according to claims 2 and 3 can be suitably implemented.

また、上記各装置において、前記第1姿勢変換手段は、基板の姿勢を前記仮傾斜姿勢よりも斜度の小さい傾斜姿勢に一旦保持し、その後、前記仮傾斜姿勢に変換するものであるのが好適である(請求項8)。   Further, in each of the above apparatuses, the first posture changing means temporarily holds the posture of the substrate in a tilt posture having a lower inclination than the temporary tilt posture, and thereafter converts the substrate posture to the temporary tilt posture. (Claim 8).

この装置によると、第1姿勢変換手段による基板の姿勢変換が二段階に段階的に行われる。そのため、請求項4に係る基板処理方法を好適に実施することが可能となる。   According to this apparatus, the posture change of the substrate by the first posture changing means is performed in two stages. Therefore, the substrate processing method according to claim 4 can be suitably performed.

本発明は、第1処理部において水平姿勢の基板に対して処理液を供給する第1処理と、第2処理部において傾斜姿勢の基板に対して処理液を供給する第2処理とを連続して行う場合に、第1処理後、第2処理部へ搬入されるまでの基板の姿勢を第2処理に適した本傾斜姿勢よりも斜度が小さい傾斜姿勢(仮傾斜姿勢)とするようにしたので、第1処理後、基板を傾斜させて処理液を流下させるようにしながらも、第1処理部から第2処理部への基板搬送中の基板表面の乾燥を効果的に抑えることが可能となる。従って、基板の搬送速度を特に高めることなく、いわゆる処理むらの発生を防止しつつ効率良く基板の処理を進めることができるようになる。   In the present invention, a first process for supplying a processing liquid to a substrate in a horizontal position in a first processing unit and a second process for supplying a processing liquid to a substrate in an inclined position in a second processing unit are continuously performed. In this case, the posture of the substrate after the first processing until it is carried into the second processing unit is set to a tilted posture (temporary tilted posture) having a lower inclination than the main tilted posture suitable for the second processing. Therefore, after the first treatment, it is possible to effectively suppress the drying of the substrate surface during the transfer of the substrate from the first treatment unit to the second treatment unit, while tilting the substrate and causing the treatment liquid to flow down. It becomes. Therefore, the substrate can be processed efficiently while preventing the occurrence of so-called processing unevenness without particularly increasing the substrate transport speed.

本発明の実施形態について図面を用いて説明する。   Embodiments of the present invention will be described with reference to the drawings.

図1は、本発明に係る基板処理装置(本発明に係る基板処理方法が使用される基板処理装置)の全体構成を示す側面図である。この基板処理装置1は、矩形のLCD用ガラス基板(以下、単に基板と称す)Sの表面に処理液である現像液を供給して現像処理した後、洗浄液を供給して洗浄処理するものである。なお、現像処理は本発明に係る第1処理に相当し、洗浄処理は本発明に係る第2処理に相当する。   FIG. 1 is a side view showing an overall configuration of a substrate processing apparatus according to the present invention (a substrate processing apparatus in which a substrate processing method according to the present invention is used). The substrate processing apparatus 1 supplies a developing solution, which is a processing solution, to a surface of a rectangular LCD glass substrate (hereinafter simply referred to as a substrate) S to perform a developing process, and then supplies a cleaning solution to perform a cleaning process. is there. The development process corresponds to the first process according to the present invention, and the cleaning process corresponds to the second process according to the present invention.

この基板処理装置1は、基板Sを受け入れるローダ室2と、基板Sに現像処理を行う現像処理室3(本発明に係る第1処理部に相当する)と、現像処理後の基板Sを洗浄する洗浄処理室4(本発明に係る第2処理部に相当する)と、洗浄後の基板Sを乾燥させる乾燥室5と、基板を次工程に搬出するためのアンローダ室6とを備えている。   The substrate processing apparatus 1 cleans a loader chamber 2 that receives a substrate S, a development processing chamber 3 that performs development processing on the substrate S (corresponding to a first processing unit according to the present invention), and a substrate S after development processing. A cleaning processing chamber 4 (corresponding to a second processing unit according to the present invention), a drying chamber 5 for drying the substrate S after cleaning, and an unloader chamber 6 for carrying out the substrate to the next process. .

ローダ室2には、搬送ローラ21が設けられ、基板Sをこの搬送ローラ21上に受け入れて水平姿勢で搬送するようになっている。   The loader chamber 2 is provided with a transport roller 21 so that the substrate S is received on the transport roller 21 and transported in a horizontal posture.

現像処理室3は、水平姿勢で搬送される基板Sの表面に現像液を供給して現像液の表面張力により基板S表面に現像液の液層を形成する液層形成室3Aと、現像液の液層が形成された基板Sを保持して液層の現像液による処理を進行させるとともに、処理終了後の基板Sの姿勢を水平姿勢から傾斜姿勢に変換する現像立替室3Bとに区画されている。   The development processing chamber 3 includes a liquid layer forming chamber 3A that supplies a developer to the surface of the substrate S conveyed in a horizontal posture and forms a liquid layer of the developer on the surface of the substrate S by the surface tension of the developer. The substrate S on which the liquid layer is formed is held and the processing of the liquid layer with the developing solution is advanced, and the developing chamber 3B for converting the posture of the substrate S after the processing from the horizontal posture to the inclined posture is partitioned. ing.

液層形成室3Aには、ローダ室2から搬送されてくる基板Sを受け入れて水平姿勢で搬送する搬送ローラ31と、この搬送ローラ31により水平姿勢で搬送される基板Sの表面に現像液を供給してその表面(上面)に現像液の液層を形成する現像液供給ノズル32とが設けられている。現像液供給ノズル32には、現像液タンク11に貯留された現像液がポンプ12により供給されるようになっている。   In the liquid layer forming chamber 3A, a transport roller 31 that receives the substrate S transported from the loader chamber 2 and transports the substrate S in a horizontal posture, and a developer on the surface of the substrate S transported in a horizontal posture by the transport roller 31. There is provided a developer supply nozzle 32 for supplying and forming a developer layer on the surface (upper surface) thereof. The developer stored in the developer tank 11 is supplied to the developer supply nozzle 32 by the pump 12.

図2は現像処理室3の斜視概略図である。現像立替室3Bには、液層形成室3Aから現像液の液層が形成された状態で搬送ローラ31により搬送されてくる基板Sを受け入れて保持する搬送ローラ33が設けられる。また、基板Sを水平姿勢で保持する状態と、基板搬送方向に向かって左右の一方、当例では右下がりの傾斜姿勢で保持する状態とに、搬送ローラ33の姿勢を切り替えることができる傾斜機構34(本発明に係る第1姿勢変換手段に相当する)が設けられている。この傾斜機構34は、搬送ローラ33の左右を回転自在に支持するローラ枠35と、基板の搬送進行方向(基板搬送方向)に向かって右側においてローラ枠35を回転自在に軸支する、基板搬送方向と平行に設けられた軸36と、基板搬送方向に向かって左側において、ローラ枠35と結合されてかかるローラ枠35の左側を上昇させるシリンダ37とからなっている。つまり、この傾斜機構34により、現像立替室3Bでは、同図に示すように搬送ローラ33を水平姿勢にしておいて液層形成室3Aから搬送ローラ31により水平姿勢で搬送されてくる基板Sを受け入れた後、図3に示すように、シリンダ37を伸張させて搬送ローラ33を傾け、基板Sを基板搬送方向に向かって右下がりに傾斜した状態、詳しくは後述するような斜度に保った状態で基板Sを搬送可能となっている。   FIG. 2 is a schematic perspective view of the development processing chamber 3. The development replacement chamber 3B is provided with a transport roller 33 that receives and holds the substrate S transported by the transport roller 31 in a state in which a developer liquid layer is formed from the liquid layer forming chamber 3A. In addition, the tilt mechanism that can switch the posture of the transport roller 33 between a state in which the substrate S is held in a horizontal posture and a state in which the substrate S is held in a tilted posture that is one of left and right in the substrate transport direction, in this example, a downwardly inclined posture. 34 (corresponding to the first posture changing means according to the present invention) is provided. The tilt mechanism 34 includes a roller frame 35 that rotatably supports the left and right sides of the transport roller 33, and a substrate transport that rotatably supports the roller frame 35 on the right side in the substrate transport progress direction (substrate transport direction). A shaft 36 provided in parallel with the direction and a cylinder 37 that is coupled to the roller frame 35 and moves up the left side of the roller frame 35 on the left side in the substrate transport direction. That is, by this tilting mechanism 34, in the development changing chamber 3B, the substrate S transported in the horizontal posture from the liquid layer forming chamber 3A by the transport roller 31 with the transport roller 33 in the horizontal posture as shown in FIG. After the acceptance, as shown in FIG. 3, the cylinder 37 is extended to incline the transport roller 33, and the substrate S is tilted downward in the right direction toward the substrate transport direction. The substrate S can be transported in the state.

なお、液層形成室3Aおよび現像立替室3Bの室の下方には、図1に示すように、現像液を回収する受け皿T1,T2が設けられ、これら受け皿T1,T2によって回収された現像液は現像液タンク11へ回収されて再利用されるようになっている。   As shown in FIG. 1, receptacles T1 and T2 for collecting the developer are provided below the liquid layer forming chamber 3A and the development changing chamber 3B, and the developer collected by these receptacles T1 and T2 is provided. Is collected in the developer tank 11 and reused.

洗浄処理室4は、現像処理室3(現像立替室3B)から傾斜姿勢で搬送されてくる基板Sを受け入れ、この基板Sに洗浄液を供給することにより当該基板Sを洗浄するとともに基板Sの姿勢をさらに斜度の大きい傾斜姿勢に変換する洗浄立替室4Aと、姿勢変換後の基板Sを受け入れ、この基板Sを傾斜姿勢で搬送しながら当該基板Sに処理液を供給することにより基板Sをさらに洗浄する本洗浄室4Bとに区画されている。   The cleaning processing chamber 4 receives the substrate S transported in an inclined posture from the development processing chamber 3 (development replacement chamber 3B), and supplies the cleaning liquid to the substrate S to clean the substrate S and the posture of the substrate S. Cleaning chamber 4A for converting the substrate S into an inclined posture having a higher inclination and the substrate S after the posture change, and supplying the processing liquid to the substrate S while transporting the substrate S in the inclined posture. Further, it is divided into a main cleaning chamber 4B to be cleaned.

洗浄立替室4Aには、現像立替室3Bから傾斜姿勢で搬送されてくる基板Sを受け入れて保持する搬送ローラ41と、基板Sの上面および下面に洗浄液を供給するシャワー型の洗浄液供給ノズル43,44(本発明に係る第1および第2先行処理液供給手段)とが設けられている。各洗浄液供給ノズル43,44は、超純水供給源45に接続されている。   The cleaning replacement chamber 4A includes a transport roller 41 that receives and holds the substrate S transported in an inclined posture from the development replacement chamber 3B, and a shower-type cleaning liquid supply nozzle 43 that supplies cleaning liquid to the upper and lower surfaces of the substrate S. 44 (first and second preceding processing liquid supply means according to the present invention). Each cleaning liquid supply nozzle 43, 44 is connected to an ultrapure water supply source 45.

さらに洗浄立替室4Aには、搬送ローラ41の姿勢を、現像立替室3Bから基板Sを受け入れ可能な傾斜姿勢と、その姿勢よりも更に斜度の大きい傾斜姿勢とに切り換える図外の傾斜機構(本発明に係る第2姿勢変換手段に相当する)が設けられている。この傾斜機構は、前記現像立替室3Bの傾斜機構34と同じ機構からなっているため詳細は省略する。なお、この実施形態では、前記搬送ローラ33,41および傾斜機構34等により本発明に係る傾斜搬送機構が構成されている。   Further, in the cleaning replacement chamber 4A, a tilting mechanism (not shown) that switches the posture of the transport roller 41 between a tilting posture in which the substrate S can be received from the developing replacement chamber 3B and a tilting posture having a greater inclination than that posture. (Corresponding to the second attitude changing means according to the present invention). Since this tilting mechanism is the same as the tilting mechanism 34 of the development changing chamber 3B, its details are omitted. In this embodiment, the transport rollers 33 and 41, the tilt mechanism 34, and the like constitute an inclined transport mechanism according to the present invention.

ここで、洗浄立替室4Aにおける変換後の基板Sの斜度(水平面と基板上面とがなす角度)は、洗浄液の液種および基板Sの種類との関係に基づき洗浄処理に最適な斜度、つまり現像液と洗浄液との置換が最も効率良く行われる斜度であって予め試験等に基づき求められた斜度(当実施形態では3°〜9°)に設定されている。これに対して、前記した現像立替室3Bにおける変換後の基板Sの斜度は、基板S上に形成された現像液が流下するものの基板表面が濡れて乾燥することがない程度の斜度であって予め試験等に基づき求められた斜度(当実施形態では0°〜5°)に設定されている。つまり、現像処理後、基板Sを傾斜させて処理液を流下させる一方で、現像処理室3から洗浄処理室4への基板搬送中の基板表面の乾燥を効果的に抑えるようにし、そして、洗浄処理室4では、基板Sの姿勢を洗浄処理に最適な斜度とすることにより現像液と洗浄液との置換性が良好に発揮され得るようになっている。なお、以下の説明では、必要に応じて、現像立替室3Bにおける変換後の基板Sの姿勢を「仮傾斜姿勢」と呼び、洗浄立替室4Aにおける変換後の基板Sの姿勢を「本傾斜姿勢」と呼ぶことにする。   Here, the inclination (angle formed by the horizontal plane and the upper surface of the substrate) of the substrate S after the conversion in the cleaning replacement chamber 4A is the optimum inclination for the cleaning process based on the relationship between the type of the cleaning liquid and the type of the substrate S. In other words, the inclination is the most efficient replacement between the developing solution and the cleaning solution, and is set to an inclination (3 ° to 9 ° in the present embodiment) obtained in advance based on a test or the like. On the other hand, the slope of the substrate S after conversion in the development switching chamber 3B described above is such that the developer formed on the substrate S flows down, but the substrate surface does not get wet and dry. Therefore, the inclination (in this embodiment, 0 ° to 5 °) obtained in advance based on a test or the like is set. That is, after the development processing, the substrate S is tilted to let the processing liquid flow down, while effectively drying the substrate surface during the transfer of the substrate from the development processing chamber 3 to the cleaning processing chamber 4 and cleaning. In the processing chamber 4, the replaceability between the developer and the cleaning liquid can be satisfactorily exhibited by setting the posture of the substrate S to the optimum inclination for the cleaning process. In the following description, the post-conversion substrate S posture in the development replacement chamber 3B is referred to as a “temporary tilt posture”, and the post-conversion substrate S posture in the cleaning replacement chamber 4A is referred to as “main tilt posture” as necessary. I will call it.

本洗浄室4Bは、姿勢変換後、洗浄立替室4Aから搬送ローラ41により搬送されてくる基板Sを受け入れて同じ姿勢で搬送する搬送ローラ47と、搬送ローラ47により傾斜姿勢で搬送される基板Sの上面に対して洗浄液を供給する洗浄液供給ノズル48と、基板Sの下面に対して洗浄液を供給する洗浄液供給ノズル49とを有している。これら洗浄液供給ノズル48、49(本発明に係る処理液供給手段)は上記超純水供給源45に接続されている。   The main cleaning chamber 4 </ b> B receives the substrate S transported by the transport roller 41 from the cleaning replacement chamber 4 </ b> A after the posture change, and transports the substrate S in the same posture, and the substrate S transported in an inclined posture by the transport roller 47. The cleaning liquid supply nozzle 48 supplies a cleaning liquid to the upper surface of the substrate S, and the cleaning liquid supply nozzle 49 supplies the cleaning liquid to the lower surface of the substrate S. These cleaning liquid supply nozzles 48 and 49 (processing liquid supply means according to the present invention) are connected to the ultrapure water supply source 45.

乾燥室5は、洗浄処理室45から搬送されてくる基板Sを受け入れて同じ傾斜姿勢で搬送する搬送ローラ51と、搬送ローラ51により傾斜姿勢で搬送される基板Sの上面に対してエアを吹き付けて洗浄液を吹き飛ばし乾燥させるエアナイフ52と、基板Sの下面に対してエアを吹き付けて洗浄液を吹き飛ばし乾燥させるエアナイフ53とを有している。これらエアナイフ52,53はエア供給源55に接続されている。   The drying chamber 5 receives the substrate S transported from the cleaning processing chamber 45 and transports the substrate S in the same inclined posture, and blows air onto the upper surface of the substrate S transported in the inclined posture by the transport roller 51. An air knife 52 that blows and dries the cleaning liquid, and an air knife 53 that blows air against the lower surface of the substrate S to blow and dry the cleaning liquid. These air knives 52 and 53 are connected to an air supply source 55.

アンローダ室6には、乾燥室5から搬送ローラ51により搬送されてくる基板Sを受け入れて保持する搬送ローラ61が設けられる。また、アンローダ室6には、基板Sを水平姿勢で保持する状態と、基板搬送方向に向かって右下がりの傾斜姿勢で保持する状態とに、搬送ローラ61の姿勢を切り替えることができる図外の傾斜機構が設けられている。つまり、乾燥室5から受け入れた傾斜姿勢の基板Sを、この傾斜機構により水平姿勢に変換し、次工程へと搬出するようになっている。この傾斜機構の構成は、現像立替室3Bに設けられる傾斜機構34と同様であるため詳細は省略する。   The unloader chamber 6 is provided with a transport roller 61 that receives and holds the substrate S transported by the transport roller 51 from the drying chamber 5. Further, in the unloader chamber 6, the posture of the transport roller 61 can be switched between a state in which the substrate S is held in a horizontal posture and a state in which the substrate S is held in a downwardly inclined posture in the substrate transport direction. A tilt mechanism is provided. That is, the tilted substrate S received from the drying chamber 5 is converted into a horizontal posture by the tilt mechanism and carried out to the next process. The configuration of this tilting mechanism is the same as that of the tilting mechanism 34 provided in the development changing chamber 3B, and therefore the details are omitted.

なお、図1には示していないが、各室は処理液のミストが互いに浸入したりしないように区画する仕切によって仕切られている。また、この基板処理装置1には、その動作を統括的に制御するコントローラが設けられており、各搬送ローラ21、31、33、41、47、51、61の駆動、傾斜機構34等の作動、および現像液等の供給停止を含めた基板処理装置1全体の動作が図外のコントローラにより制御されるようになっている。   Although not shown in FIG. 1, each chamber is partitioned by a partition that partitions the mists of the processing liquid so as not to enter each other. In addition, the substrate processing apparatus 1 is provided with a controller that comprehensively controls the operation thereof, and drives each of the transport rollers 21, 31, 33, 41, 47, 51, 61, and the operation of the tilt mechanism 34, etc. The operation of the entire substrate processing apparatus 1 including the supply stop of the developing solution and the like is controlled by a controller (not shown).

次に、このコントローラの制御に基づく基板処理装置1の動作(基板処理方法)について図1、図4を参照しつつその作用と共に説明する。   Next, the operation (substrate processing method) of the substrate processing apparatus 1 based on the control of the controller will be described together with the operation thereof with reference to FIGS.

図示しない基板供給装置からローダ室2に供給される基板Sは、搬送ローラ21により水平姿勢で搬送され、液層形成室3Aの搬送ローラ31に受け渡されて現像処理室3に搬入される。そして、液層形成室3A内を一定速度で通過し、その間に基板Sの表面に現像液供給ノズル32から現像液が供給され、現像液の表面張力によって基板S表面に現像液の液層が形成される。   The substrate S supplied to the loader chamber 2 from a substrate supply device (not shown) is transported in a horizontal posture by the transport roller 21, transferred to the transport roller 31 in the liquid layer forming chamber 3 </ b> A, and transported into the development processing chamber 3. Then, the developer passes through the liquid layer forming chamber 3A at a constant speed, while the developer is supplied from the developer supply nozzle 32 to the surface of the substrate S, and the developer liquid layer is formed on the surface of the substrate S by the surface tension of the developer. It is formed.

液層形成室3Aにおいて現像液の液層が形成された状態の基板Sは、搬送ローラ31から搬送ローラ33へと渡されて現像立替室3Bへと搬送される。現像立替室3Bに搬入された基板Sは搬送ローラ33の停止により一時的に静止状態とされる。その間、その上面に形成されている液層の現像液により処理が進行する、いわゆるパドル現像が行われる。   The substrate S on which the developer layer has been formed in the liquid layer forming chamber 3A is transferred from the transport roller 31 to the transport roller 33 and transported to the development replacement chamber 3B. The substrate S carried into the development changing chamber 3 </ b> B is temporarily brought into a stationary state when the transport roller 33 is stopped. In the meantime, so-called paddle development is performed in which processing proceeds with a developer of a liquid layer formed on the upper surface.

このパドル現像が所定時間だけ行われると、次に傾斜機構34のシリンダ37が伸張して搬送ローラ33が傾斜する。これにより基板Sが水平姿勢から基板搬送方向右側へ傾斜した仮傾斜姿勢へと姿勢変換される(本発明に係る第1姿勢変換工程に相当する)。   When this paddle development is performed for a predetermined time, the cylinder 37 of the tilt mechanism 34 is then extended and the transport roller 33 is tilted. Accordingly, the posture of the substrate S is changed from a horizontal posture to a temporary inclined posture inclined to the right in the substrate transport direction (corresponding to the first posture changing step according to the present invention).

この基板Sの姿勢変換により、基板Sの上面の液層の現像液のほとんど全てが流下し、下方の受け皿T2に回収される。つまり、現像液が後工程へ殆ど持ち出されることなく現像処理室3において再利用されることとなる。   By this attitude change of the substrate S, almost all of the developer in the liquid layer on the upper surface of the substrate S flows down and is collected in the lower tray T2. That is, the developer is reused in the development processing chamber 3 without being taken out to the subsequent process.

現像立替室3Bで仮傾斜姿勢とされて搬送ローラ33により搬送されてくる基板Sは、同じ傾斜姿勢のままで洗浄立替室4Aの搬送ローラ41へ渡されて洗浄処理室4へと搬入される(本発明に係る搬送工程に相当する)。なお、基板Sは、現像処理室3から洗浄処理室4に仮傾斜姿勢のままで搬送されてくるが、この際の基板Sの斜度は、上述した通り基板Sの表面が乾燥することがない程度の斜度(0°〜5°)に設定されている、そのため、現像処理室3から洗浄処理室4への搬送が特に高速で行われることはなく、他の搬送動作とほぼ同程度の速度で行われる。   The substrate S which has been temporarily inclined in the development changing chamber 3B and is transferred by the transfer roller 33 is transferred to the transfer roller 41 in the cleaning changing chamber 4A and is carried into the cleaning processing chamber 4 while maintaining the same inclined posture. (Corresponding to the conveying step according to the present invention). The substrate S is transported from the development processing chamber 3 to the cleaning processing chamber 4 in a temporarily inclined posture. The inclination of the substrate S at this time is such that the surface of the substrate S is dried as described above. The inclination is set to a level (0 ° to 5 °), so that the transfer from the development processing chamber 3 to the cleaning processing chamber 4 is not performed at a particularly high speed and is almost the same as other transfer operations. Done at a speed of.

基板Sが完全に洗浄立替室4Aに搬入されると、搬送ローラ41が停止し、次に傾斜機構のシリンダ(図示せず)が伸張して搬送ローラ41がさらに傾斜し、これにより仮傾斜姿勢(0°〜5°)から本傾斜姿勢(3°〜9°)へと基板Sの姿勢が変換される(本発明に係る第2姿勢変換工程に相当する)。また、この傾斜機構の作動とほぼ同時に洗浄液供給ノズル43,44から基板Sの上面及び下面に対して洗浄液が供給され、これにより姿勢変換中、基板Sが洗浄される(本発明に係る第2先行処理工程に相当する)。   When the substrate S is completely carried into the cleaning replacement chamber 4A, the transport roller 41 is stopped, and then the cylinder (not shown) of the tilting mechanism is extended to further tilt the transport roller 41, whereby a temporary tilting posture is achieved. The posture of the substrate S is converted from (0 ° to 5 °) to the main inclined posture (3 ° to 9 °) (corresponding to the second posture changing step according to the present invention). Further, almost simultaneously with the operation of the tilt mechanism, the cleaning liquid is supplied from the cleaning liquid supply nozzles 43 and 44 to the upper surface and the lower surface of the substrate S, whereby the substrate S is cleaned during the posture change (second embodiment according to the present invention). Corresponds to the preceding processing step).

本傾斜姿勢への基板Sの姿勢変換が完了すると、基板Sは、搬送ローラ41から本洗浄室4Bの搬送ローラ47へ渡され、本傾斜姿勢のまま定速で搬送される。本洗浄室4Bにおいては、基板Sの上面及び下面に対して洗浄液供給ノズル48,49から洗浄液が供給されて洗浄される(本発明に係る基板処理工程に相当する)。この際、洗浄液は傾斜した基板Sに沿って速やかに下側に流れ落ちることになり、基板Sの中央部付近に洗浄液が滞留することはなく短時間で充分に洗浄される。特に、このときの基板Sの斜度は、上述の通り現像液と洗浄液との置換が最も効率良く行われる斜度(本傾斜姿勢)に設定されているので効率的な洗浄が行われる。   When the posture conversion of the substrate S to the main tilted posture is completed, the substrate S is transferred from the transport roller 41 to the transport roller 47 of the main cleaning chamber 4B, and is transported at a constant speed with the main tilt posture. In the main cleaning chamber 4B, the cleaning liquid is supplied from the cleaning liquid supply nozzles 48 and 49 to the upper surface and the lower surface of the substrate S to be cleaned (corresponding to the substrate processing step according to the present invention). At this time, the cleaning liquid quickly flows down along the inclined substrate S, and the cleaning liquid does not stay near the center of the substrate S, and is sufficiently cleaned in a short time. Particularly, since the inclination of the substrate S at this time is set to an inclination (the main inclination posture) at which the replacement of the developer and the cleaning liquid is most efficiently performed as described above, efficient cleaning is performed.

洗浄処理室4から傾斜姿勢で搬送ローラ47により搬送されてくる基板Sは同じ傾斜姿勢のままで搬送ローラ51へ渡されて乾燥室5へ搬送される。乾燥室5においては、傾斜姿勢で搬送される基板Sの上面及び下面にエアナイフ52,53からエアが吹き付けられ、これにより洗浄液が吹き飛ばされて乾燥が進められる。   The substrate S transferred from the cleaning processing chamber 4 by the transfer roller 47 in an inclined posture is transferred to the transfer roller 51 and transferred to the drying chamber 5 in the same inclined posture. In the drying chamber 5, air is blown from the air knives 52, 53 onto the upper and lower surfaces of the substrate S transported in an inclined posture, whereby the cleaning liquid is blown off and the drying proceeds.

乾燥室5から搬送ローラ51により搬送されてくる基板Sは同じ傾斜姿勢のままで搬送ローラ61へ渡されてアンローダ室6へ搬送される。そして、アンローダ室6内に完全に搬入されると、傾斜機構により基板Sが傾斜姿勢から水平姿勢へと変換される。そして、かかる姿勢変換動作後に、搬送ローラ61の駆動により基板Sが図示しない次工程へと搬出されることとなる。なお、基板Sの位置は、搬送ローラ等の駆動時間で認識してもよいし、各処理室の出入口に基板Sの通過を検知するセンサを設けて認識するようにしてもよい。   The substrate S transported from the drying chamber 5 by the transport roller 51 is transferred to the transport roller 61 and transported to the unloader chamber 6 in the same inclined posture. When the substrate S is completely carried into the unloader chamber 6, the substrate S is converted from the inclined posture to the horizontal posture by the tilt mechanism. After the posture changing operation, the substrate S is carried out to the next process (not shown) by driving the transport roller 61. Note that the position of the substrate S may be recognized by the driving time of the transport roller or the like, or a sensor that detects the passage of the substrate S may be provided at the entrance / exit of each processing chamber.

以上のように、この基板処理装置1(基板処理方法)では、現像処理後、基板Sの姿勢を直ちに洗浄処理に適した姿勢(本傾斜姿勢)に変換するのではなく、一旦、この本傾斜姿勢よりも斜度の小さい仮傾斜姿勢、つまり現像液を流下させながらも基板Sの乾燥が防止されるような緩斜度の姿勢に変換し、この状態のまま現像処理室3から洗浄処理室4に基板Sを搬送するようにしている。そのため、上記の通り、現像処理室3から洗浄処理室4の搬送を高速で行うことなく当該搬送中の基板Sの乾燥を有効に防止することができる。   As described above, in this substrate processing apparatus 1 (substrate processing method), after the development processing, the posture of the substrate S is not immediately converted into a posture suitable for the cleaning process (mainly inclined posture), but once this main inclination is made. The temporary inclined posture having a smaller inclination than the posture, that is, a posture having a gentle inclination that prevents the substrate S from being dried while the developing solution is allowed to flow down, is maintained in this state from the development processing chamber 3 to the cleaning processing chamber. 4, the substrate S is transported. Therefore, as described above, it is possible to effectively prevent the drying of the substrate S during the transfer without performing the transfer from the development processing chamber 3 to the cleaning processing chamber 4 at a high speed.

従って、傾斜姿勢の基板Sに洗浄液を供給しながら効率的に基板Sの洗浄処理を進めるという利益を享受する一方で、現像処理後、洗浄処理を開始するまでの基板S表面の乾燥に伴う現像むらの発生を、基板搬送の高速化するといったリスクを伴うことなく有効に防止することができる。   Therefore, while enjoying the benefit of efficiently performing the cleaning process of the substrate S while supplying the cleaning liquid to the inclined substrate S, the development accompanying the drying of the surface of the substrate S after the development process until the cleaning process is started. The occurrence of unevenness can be effectively prevented without the risk of increasing the speed of substrate conveyance.

特に、この基板処理装置1では、洗浄立替室4Aにおいて基板Sを仮傾斜姿勢から本傾斜姿勢に姿勢変換される間、洗浄液供給ノズル43,44により洗浄液を供給することにより本洗浄室4Bでの洗浄処理に先行して洗浄処理を行うようにしているので、現像処理後、本傾斜姿勢での洗浄処理が開始されるまでの間に基板表面が乾燥するのをより確実に防止することができ、また、基板Sの洗浄処理をより早期に開始してより高い洗浄効果を得ることができるという利点もある。   In particular, in the substrate processing apparatus 1, while the substrate S is changed from the temporary inclined posture to the main inclined posture in the cleaning replacement chamber 4A, the cleaning liquid is supplied by the cleaning liquid supply nozzles 43 and 44 to thereby maintain the main cleaning chamber 4B. Since the cleaning process is performed prior to the cleaning process, it is possible to more reliably prevent the substrate surface from drying between the development process and the start of the cleaning process in the inclined position. Also, there is an advantage that a higher cleaning effect can be obtained by starting the cleaning process of the substrate S earlier.

なお、以上説明した基板処理装置1(基板処理方法)は、本発明に係る基板処理装置(基板処理方法)の具体的な実施の形態の例示であって、基板処理装置の具体的な構成、あるいは基板処理方法は、本発明の要旨を逸脱しない範囲で適宜変更可能である。例えば、次のような構成(方法)を採用したものでもよい。   The substrate processing apparatus 1 (substrate processing method) described above is an exemplification of a specific embodiment of the substrate processing apparatus (substrate processing method) according to the present invention, and includes a specific configuration of the substrate processing apparatus, Alternatively, the substrate processing method can be appropriately changed without departing from the gist of the present invention. For example, the following configuration (method) may be adopted.

(1) 図1に示す基板処理装置1の洗浄処理室4として、図5のような洗浄処理室4を採用してもよい。この洗浄処理室4は、洗浄立替室4A,本洗浄室4Bに加えて、洗浄立替室4Aの上流側に先行処理室4A′を備えた構成となっている。この先行処理室4A′には、現像立替室3Bから傾斜姿勢で搬送されてくる基板Sを受け入れて保持する搬送ローラ40と、この搬送ローラ40により搬送されてくる基板Sの表面に対して搬送方向上流側から下流側に向かって洗浄液を大量供給、あるいは高圧供給可能な例えばスリット型の洗浄液供給ノズル42(本発明に係る第1先行処理液供給手段に相当する)とが設けられている。つまり、この基板処理装置1では、さらに洗浄立替室4A,本洗浄室4Bでの洗浄処理に先行して基板Sの洗浄処理を行うように構成されている(本発明に係る第2先行処理工程に相当する)。このような装置によると、現像立替室3Bから搬出されている基板Sに直ちに洗浄処理を行うことができるので、基板表面の乾燥防止、洗浄時間の確保という点で図1の装置に比してより有利となる。この場合、同図では特に記載していないが、上記の洗浄液供給ノズル42の下流側に、搬送方向下流側から上流側に向かって基板Sに洗浄液を供給するスリット型の洗浄液供給ノズルを前記ノズル42に対向して配置し、さらにこれらノズルの間の部分であって基板Sに対してその傾斜上位側の位置に洗浄液を供給する洗浄液供給ノズルを備えたものであるのがより好ましい。この構成によると汚染の再付着を防止しつつ基板Sを洗浄することができる。   (1) As the cleaning processing chamber 4 of the substrate processing apparatus 1 shown in FIG. 1, a cleaning processing chamber 4 as shown in FIG. 5 may be adopted. The cleaning processing chamber 4 includes a preceding processing chamber 4A ′ on the upstream side of the cleaning replacement chamber 4A in addition to the cleaning replacement chamber 4A and the main cleaning chamber 4B. In the preceding processing chamber 4A ′, a transport roller 40 that receives and holds the substrate S transported in an inclined posture from the developing replacement chamber 3B, and transports the surface of the substrate S transported by the transport roller 40. For example, a slit-type cleaning liquid supply nozzle 42 (corresponding to the first preceding processing liquid supply means according to the present invention) capable of supplying a large amount of cleaning liquid or supplying a high pressure from the upstream side to the downstream side in the direction is provided. That is, the substrate processing apparatus 1 is configured to perform the cleaning process of the substrate S prior to the cleaning process in the cleaning replacement chamber 4A and the main cleaning chamber 4B (the second preceding processing step according to the present invention). Equivalent to According to such an apparatus, since the cleaning process can be immediately performed on the substrate S carried out from the development changing chamber 3B, the substrate surface can be prevented from drying and the cleaning time can be secured as compared with the apparatus of FIG. More advantageous. In this case, a slit type cleaning liquid supply nozzle that supplies the cleaning liquid to the substrate S from the downstream side in the transport direction toward the upstream side is provided on the downstream side of the cleaning liquid supply nozzle 42, although not particularly described in FIG. It is more preferable that a cleaning liquid supply nozzle that is disposed opposite to the nozzle 42 and further supplies a cleaning liquid to a position between the nozzles and on the upper side of the inclination with respect to the substrate S is more preferable. According to this configuration, it is possible to clean the substrate S while preventing reattachment of contamination.

なお、図5のように洗浄処理室4に先行処理室4A′を別途設ける代わりに、例えば、図1の洗浄立替室4Aに、洗浄液供給ノズル43,44とは別に、基板受け入れ口の近傍にスリット型の洗浄液供給ノズルを設け、現像処理室3から洗浄立替室4Aに搬送されてくる基板Sにこの洗浄液供給ノズルにより洗浄液を供給するようにしてもよい。このような構成によれば図5と同様の効果を得ることができる。   In place of separately providing the preceding processing chamber 4A ′ in the cleaning processing chamber 4 as shown in FIG. 5, for example, in the cleaning replacement chamber 4A in FIG. 1, in the vicinity of the substrate receiving port separately from the cleaning liquid supply nozzles 43 and 44. A slit-type cleaning liquid supply nozzle may be provided, and the cleaning liquid may be supplied to the substrate S conveyed from the development processing chamber 3 to the cleaning replacement chamber 4A by the cleaning liquid supply nozzle. According to such a configuration, the same effect as in FIG. 5 can be obtained.

(2) 実施形態では、洗浄立替室4Aにおいて、仮傾斜姿勢から本傾斜姿勢への姿勢変換中の基板Sに対して洗浄液供給ノズル43,44により洗浄液を供給するようにしているが、これを省略して装置の簡略化を図るようにしてもよい。つまり洗浄立替室4Aでは、基板Sの姿勢変換のみを行うようにしてもよい。   (2) In the embodiment, the cleaning liquid is supplied by the cleaning liquid supply nozzles 43 and 44 to the substrate S whose posture is changed from the temporary inclined posture to the main inclined posture in the cleaning replacement chamber 4A. It may be omitted to simplify the apparatus. That is, only the posture change of the substrate S may be performed in the cleaning replacement chamber 4A.

(3) 現像立替室3Bにおいて、基板Sを水平姿勢から仮傾斜姿勢(斜度2°)に姿勢変換する過程で一旦基板Sを静止させて(例えば斜度1.5°の姿勢)その姿勢を保持し、その後、仮傾斜姿勢まで基板Sを傾けるようにしてもよい。このようにすれば、基板Sを水平姿勢から仮傾斜姿勢へ変換する際の現像液の流れが緩やかになり、いわゆる流れむら(流路むら)の発生を抑制することが可能になるという利点がある。   (3) In the development changing chamber 3B, the substrate S is temporarily stopped in the process of changing the posture of the substrate S from the horizontal posture to the temporary inclined posture (inclination 2 °) (for example, the posture having an inclination of 1.5 °). Then, the substrate S may be tilted to the temporary tilt posture. In this way, there is an advantage that the flow of the developer when the substrate S is converted from the horizontal posture to the temporary inclined posture becomes gentle, and so-called flow unevenness (flow path unevenness) can be suppressed. is there.

(4) また、図1の基板処理装置1では、基板Sの傾斜姿勢は、基板搬送方向に向かって左右一方側(つまり基板Sの幅方向)に傾ける姿勢としているが、基板搬送方向に傾く姿勢であってもよい。図6および図7は、その場合の現像処理室3および洗浄処理室4の構成を模式的に示している。   (4) Further, in the substrate processing apparatus 1 of FIG. 1, the inclined posture of the substrate S is inclined to the left and right sides (that is, the width direction of the substrate S) toward the substrate transport direction, but tilted in the substrate transport direction. It may be a posture. 6 and 7 schematically show the configuration of the development processing chamber 3 and the cleaning processing chamber 4 in that case.

まず図6の構成について説明する。同図(a)に示すように、現像立替室3Bには、基板Sを水平姿勢で搬送する状態と、基板搬送方向に向かって先上がりの傾斜姿勢で搬送する状態とに、搬送ローラ33の姿勢(各搬送ローラ33の並びの方向)を切り替えることができる傾斜機構が設けられている。この傾斜機構は、詳しく図示していないが、搬送ローラ33の左右を回転自在に支持するローラ枠と、基板搬送方向の後端においてローラ枠を回転自在に軸支する、基板搬送方向と直交して設けられた軸と、基板搬送方向の先端部においてローラ枠と結合されてかかるローラ枠の先端を昇降させるシリンダ71とからなっており、同図に示すように搬送ローラ33を水平姿勢にしておいて液層形成室3Aから水平姿勢で搬送されてくる基板Sを受け入れた後、シリンダ37を伸張させてローラ枠を傾け、基板Sを基板搬送方向に向かって先上がりに傾斜した状態、つまり仮傾斜姿勢(斜度0°〜5°)に変換した状態で搬送可能となっている。   First, the configuration of FIG. 6 will be described. As shown in FIG. 5A, the developing roller 3B includes a transport roller 33 in a state in which the substrate S is transported in a horizontal posture and a state in which the substrate S is transported in an inclined posture that rises toward the substrate transport direction. An inclination mechanism capable of switching the posture (the direction in which the respective transport rollers 33 are arranged) is provided. Although not shown in detail, this tilting mechanism is orthogonal to the substrate transport direction, in which a roller frame that rotatably supports the left and right of the transport roller 33 and a roller frame that rotatably supports the rear end of the substrate transport direction. And a cylinder 71 which is coupled to the roller frame at the front end in the substrate transport direction and lifts the front end of the roller frame. As shown in FIG. After receiving the substrate S transported in a horizontal posture from the liquid layer forming chamber 3A, the cylinder 37 is extended to tilt the roller frame, and the substrate S is tilted upward in the substrate transport direction, that is, It can be transported in a state of being converted into a temporary inclined posture (inclination of 0 ° to 5 °).

一方、洗浄処理室4の洗浄立替室4Aには、基板Sを仮傾斜姿勢で搬送する状態と、基板搬送方向に向かってさらに斜度の大きい先上がりの傾斜姿勢、つまり本傾斜姿勢(斜度3°〜9°)で搬送する状態とに、搬送ローラ41の姿勢(各搬送ローラ41の並びの方向)を切り替えることができる傾斜機構が設けられている。また、本洗浄室4Bには、基板Sを基板搬送方向に向かって先上がりの本傾斜姿勢で搬送する状態と、水平姿勢で搬送する状態とに、搬送ローラ47の姿勢(各搬送ローラ47の並びの方向)を切り換えることができる傾斜機構が設けられている。なお、洗浄立替室4Aおよび本洗浄室4Bの各傾斜機構は、基本的には現像立替室3Bのものと同様であり、それぞれシリンダ72,73により作動するようになっている。   On the other hand, in the cleaning replacement chamber 4A of the cleaning processing chamber 4, a state in which the substrate S is transported in a temporary tilted posture and a forward tilted posture having a greater slope toward the substrate transport direction, that is, a main tilted posture (gradient). An inclination mechanism is provided that can switch the posture of the conveying rollers 41 (the direction in which the conveying rollers 41 are arranged) to the state of conveying at 3 ° to 9 °. Further, the main cleaning chamber 4B has a posture of the transport roller 47 (a state of each transport roller 47) in a state in which the substrate S is transported in the main inclined posture that is advanced in the substrate transport direction and a state in which the substrate S is transported in the horizontal posture. An inclination mechanism capable of switching the direction of the alignment) is provided. The inclination mechanisms of the cleaning replacement chamber 4A and the main cleaning chamber 4B are basically the same as those of the development replacement chamber 3B, and are operated by cylinders 72 and 73, respectively.

この図6に示す基板処理装置1によると、液層形成室3Aにおいて現像液の液層が形成された状態の基板Sは、同図(a)に示すように搬送ローラ31から搬送ローラ33へ渡されて現像立替室3Bへと搬送されてパドル現像に供される。そして、傾斜機構のシリンダ71の伸張により水平姿勢から基板搬送方向先上がりに傾斜した仮傾斜姿勢へと姿勢変換された後(図6(b))、搬送ローラ33により搬送されて、傾斜姿勢のままで洗浄立替室4Aの搬送ローラ41へ渡されて洗浄処理室4へと搬入される。   According to the substrate processing apparatus 1 shown in FIG. 6, the substrate S on which the liquid layer of the developer is formed in the liquid layer forming chamber 3A is transferred from the transport roller 31 to the transport roller 33 as shown in FIG. Passed to the development replacement chamber 3B for paddle development. Then, after the orientation of the tilting mechanism 71 is extended, the posture is changed from a horizontal posture to a temporary inclined posture inclined forward in the substrate transport direction (FIG. 6B), and then transported by the transport roller 33 to be in the tilted posture. As it is, it is transferred to the transport roller 41 of the cleaning replacement chamber 4A and carried into the cleaning processing chamber 4.

基板Sが完全に洗浄立替室4Aに搬入されると、搬送ローラ41が停止し、傾斜機構のシリンダ72の伸張により仮傾斜姿勢から本傾斜姿勢へと基板Sの姿勢が変換され(図6(c))、さらに、搬送ローラ41により搬送されて、本傾斜姿勢のままで搬送ローラ47へ渡されて本洗浄室4Bへと搬入される。そして、本洗浄室4Bにおいて本傾斜姿勢の状態で洗浄処理が行われた後、傾斜機構のシリンダ73の収縮により本傾斜姿勢から水平姿勢へと基板Sの姿勢が変換され(図6(d))、搬送ローラ47から搬送ローラ51に受け渡されることにより乾燥室5へと搬送されることとなる。   When the substrate S is completely carried into the cleaning replacement chamber 4A, the transport roller 41 is stopped, and the posture of the substrate S is changed from the temporary inclined posture to the main inclined posture by the extension of the cylinder 72 of the tilt mechanism (FIG. 6 ( c)) Further, it is transported by the transport roller 41, is transferred to the transport roller 47 in the main inclined position, and is transported into the main cleaning chamber 4B. Then, after the cleaning process is performed in the main inclined position in the main cleaning chamber 4B, the attitude of the substrate S is converted from the main inclined position to the horizontal position by contraction of the cylinder 73 of the tilt mechanism (FIG. 6D). ), It is transferred to the drying chamber 5 by being transferred from the transfer roller 47 to the transfer roller 51.

次に、図7の構成について説明する。   Next, the configuration of FIG. 7 will be described.

同図(a)に示すように、現像処理室3の構成は図6のものと共通している。   As shown in FIG. 6A, the configuration of the development processing chamber 3 is the same as that shown in FIG.

洗浄処理室4の洗浄立替室4Aには、基板Sを搬送方向先上がりの仮傾斜姿勢で搬送する状態と、基板搬送方向に向かって先下がりの本傾斜姿勢(斜度3°〜9°)で搬送する状態とに、搬送ローラ41の姿勢(各搬送ローラ41の並びの方向)を切り替えることができる傾斜機構が設けられている。また、本洗浄室4Bには、基板Sを基板搬送方向に向かって先下がりの本傾斜姿勢で搬送する状態と、水平姿勢で搬送する状態とに、搬送ローラ47の姿勢(各搬送ローラ47の並びの方向)を切り換えることができる傾斜機構が設けられている。   In the cleaning replacement chamber 4A of the cleaning processing chamber 4, the substrate S is transported in a provisional tilt posture that is advanced in the transport direction, and the main tilt posture is lowered toward the substrate transport direction (inclination of 3 ° to 9 °). An inclination mechanism is provided that can switch the posture of the conveying rollers 41 (the direction in which the conveying rollers 41 are arranged) to the state in which the conveying rollers 41 are conveyed. Further, the main cleaning chamber 4B has a posture of the transport roller 47 (a state of each transport roller 47) in a state in which the substrate S is transported in the main inclined posture that is first lowered toward the substrate transport direction and a state in which the substrate S is transported in the horizontal posture. An inclination mechanism capable of switching the direction of the alignment) is provided.

なお、本洗浄室4Bおよび本洗浄室4Bの各傾斜機構は、基本的には図6で説明したものと同様であるが、本洗浄室4Bのものについては、同図に示すように、基板搬送方向の前端においてローラ枠が回転自在に軸支され、基板搬送方向の後端部においてローラ枠とシリンダ73とが結合されている点で構成が相違している。   The tilting mechanisms of the main cleaning chamber 4B and the main cleaning chamber 4B are basically the same as those described in FIG. 6, but the main cleaning chamber 4B has a substrate as shown in FIG. The configuration is different in that the roller frame is rotatably supported at the front end in the transport direction, and the roller frame and the cylinder 73 are coupled at the rear end in the substrate transport direction.

この図7に示す基板処理装置1によると、現像液の液層が形成された状態の基板Sは、同図(a)(b)に示すように水平姿勢から基板搬送方向先上がりに傾斜した仮傾斜姿勢へと姿勢変換された後、搬送ローラ33により搬送されて、傾斜姿勢のままで現像立替室3Bから洗浄立替室4Aの搬送ローラ41へ渡されて洗浄処理室4へと搬入される。   According to the substrate processing apparatus 1 shown in FIG. 7, the substrate S on which the liquid layer of the developer is formed is tilted upward from the horizontal posture in the substrate transport direction as shown in FIGS. After the posture is changed to the temporary inclined posture, it is transferred by the transfer roller 33 and is transferred from the development changing chamber 3B to the transfer roller 41 in the cleaning changing chamber 4A while being in the inclined posture and is carried into the cleaning processing chamber 4. .

基板Sが完全に洗浄立替室4Aに搬入されると、搬送ローラ41が停止し、傾斜機構のシリンダ72の収縮により先上がりの仮傾斜姿勢から先下がりの本傾斜姿勢へと基板Sの姿勢が変換され(図7(c))、さらに搬送ローラ41により搬送されて、本傾斜姿勢のままで搬送ローラ47へ渡されて本洗浄室4Bへと搬入される。そして、本洗浄室4Bにおいて本傾斜姿勢の状態で洗浄処理が行われた後、傾斜機構のシリンダ73の収縮により本傾斜姿勢から水平姿勢へと基板Sの姿勢が変換され(図7(d))、搬送ローラ47から搬送ローラ51に受け渡されることにより乾燥室5へと基板Sが搬送されることとなる。   When the substrate S is completely carried into the cleaning replacement chamber 4A, the transport roller 41 is stopped, and the posture of the substrate S is changed from the preliminarily inclined pre-tilt posture to the main tilted posture by the contraction of the cylinder 72 of the tilt mechanism. It is converted (FIG. 7 (c)), further conveyed by the conveying roller 41, passed to the conveying roller 47 in the main inclined position, and carried into the main cleaning chamber 4B. Then, after the cleaning process is performed in the main inclined position in the main cleaning chamber 4B, the attitude of the substrate S is converted from the main inclined position to the horizontal position by contraction of the cylinder 73 of the tilt mechanism (FIG. 7D). ), The substrate S is transferred to the drying chamber 5 by being transferred from the transfer roller 47 to the transfer roller 51.

このような図6,図7に示す基板処理装置1の構成によっても、上記実施形態の基板処理装置1と同様の作用効果を奏することができる。   The configuration of the substrate processing apparatus 1 shown in FIGS. 6 and 7 can provide the same effects as the substrate processing apparatus 1 of the above embodiment.

なお、上述した実施形態では、仮傾斜姿勢における基板Sの斜度を0°〜5°、本傾斜姿勢における基板Sの斜度を3°〜9°の範囲内で設定しているが、勿論、この斜度は一例であって、基板Sの種類、サイズ、および処理液の種類に応じて適宜設定すればよい。但し、実施形態のように矩形のLCD用ガラス基板Sに現像処理および洗浄処理を順次施す場合には、仮傾斜姿勢の斜度は0°〜5°、本傾斜姿勢の斜度は3°〜9°の範囲内でそれぞれ設定することで概ね良好な結果を得ることが期待できる。また、変形例(3)の如く、現像立替室3Bの姿勢変換途中に基板Sを一旦静止させる際の斜度は、仮傾斜姿勢の斜度が0°〜5°の場合には、1°〜3°(仮傾斜姿勢の略半分)に設定することで概ね良好な結果を得ることが期待できる。   In the above-described embodiment, the inclination of the substrate S in the temporary inclination posture is set in the range of 0 ° to 5 °, and the inclination of the substrate S in the main inclination posture is set in the range of 3 ° to 9 °. The inclination is an example, and may be set as appropriate according to the type and size of the substrate S and the type of processing liquid. However, when the development process and the cleaning process are sequentially performed on the rectangular LCD glass substrate S as in the embodiment, the inclination of the temporary inclination posture is 0 ° to 5 °, and the inclination of the main inclination posture is 3 ° to 3 °. By setting each within the range of 9 °, it can be expected to obtain a generally good result. Further, as in the modified example (3), the inclination when the substrate S is temporarily stopped during the change of the posture of the development changing chamber 3B is 1 ° when the inclination of the temporary inclination posture is 0 ° to 5 °. It can be expected that generally good results can be obtained by setting the angle to ˜3 ° (substantially half of the temporary inclined posture).

本発明に係る基板処理装置(本発明の基板処理方法が使用される基板処理装置)の全体構成を示す模式的側面図である。1 is a schematic side view showing an overall configuration of a substrate processing apparatus according to the present invention (a substrate processing apparatus in which a substrate processing method of the present invention is used). 現像処理室の構成を示す斜視図である。It is a perspective view which shows the structure of a development processing chamber. 現像処理室の構成を示す斜視図である。It is a perspective view which shows the structure of a development processing chamber. 処理の進行状態と基板の姿勢との関係を示す斜視略図である。It is a schematic perspective view which shows the relationship between the progress state of a process, and the attitude | position of a board | substrate. 本発明に係る他の基板処理装置(本発明の基板処理方法が使用される基板処理装置)の全体構成を示す模式的側面図である。It is a typical side view which shows the whole structure of the other substrate processing apparatus (substrate processing apparatus in which the substrate processing method of this invention is used) based on this invention. 本発明に係る他の基板処理装置(本発明の基板処理方法が使用される基板処理装置)の全体構成を示す模式的側面図である。It is a typical side view which shows the whole structure of the other substrate processing apparatus (substrate processing apparatus in which the substrate processing method of this invention is used) based on this invention. 本発明に係る他の基板処理装置(本発明の基板処理方法が使用される基板処理装置)の全体構成を示す模式的側面図である。It is a typical side view which shows the whole structure of the other substrate processing apparatus (substrate processing apparatus in which the substrate processing method of this invention is used) based on this invention.

符号の説明Explanation of symbols

1 基板処理装置
2 ローダ室
3 現像処理室
3A 液層形成室
3B 現像立替室
4 洗浄処理室
4A 洗浄立替室
4B 本洗浄室
5 乾燥室
6 アンローダ室
DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Loader chamber 3 Development processing chamber 3A Liquid layer formation chamber 3B Development replacement chamber 4 Cleaning processing chamber 4A Cleaning replacement chamber 4B Main cleaning chamber 5 Drying chamber 6 Unloader chamber

Claims (8)

基板を搬送しながら、第1処理部において水平姿勢の基板に対して処理液を供給する第1処理と、第2処理部において傾斜姿勢の基板に対して処理液を供給する第2処理とを順次行う基板処理方法において、
前記第1処理後、基板を水平姿勢から所定の傾斜姿勢であって、かつ前記第2処理に適した姿勢として予め定められた本傾斜姿勢よりも斜度の小さい仮傾斜姿勢に変換する第1姿勢変換工程と、
この仮傾斜姿勢の基板を第1処理部から第2処理部に搬送する搬送工程と、
第2処理部において基板の姿勢を前記仮傾斜姿勢から前記本傾斜姿勢に変換する第2姿勢変換工程と、
第2姿勢変換工程の後、本傾斜姿勢の基板に対して前記第2処理を行う基板処理工程と、を有する
ことを特徴とする基板処理方法。
While transporting the substrate, a first process for supplying the processing liquid to the substrate in the horizontal posture in the first processing unit, and a second process for supplying the processing liquid to the substrate in the tilted posture in the second processing unit. In the sequential substrate processing method,
After the first processing, the substrate is converted from a horizontal posture to a provisional tilt posture having a predetermined tilt posture and a tilt angle smaller than the main tilt posture predetermined as a posture suitable for the second process. Posture change process;
A transporting step of transporting the substrate in the temporarily inclined posture from the first processing unit to the second processing unit;
A second posture conversion step of converting the posture of the substrate from the temporary tilt posture to the main tilt posture in the second processing unit;
And a substrate processing step of performing the second processing on the substrate in the inclined posture after the second posture changing step.
請求項1に記載の基板処理方法において、
前記第2姿勢変換工程前に、仮傾斜姿勢で搬送される基板に対して前記第2処理を前記基板処理工程に先行して行う第1先行処理工程を有する
ことを特徴とする基板処理方法。
The substrate processing method according to claim 1,
A substrate processing method comprising: a first preceding processing step for performing the second processing on the substrate transported in a temporary inclined posture prior to the substrate processing step before the second posture changing step.
請求項1又は2に記載の基板処理方法において、
前記基板処理工程に先立ち、前記第2姿勢変換工程において姿勢変換中の基板に対して前記第2処理を行う第2先行処理工程を有する
ことを特徴とする基板処理方法。
In the substrate processing method of Claim 1 or 2,
Prior to the substrate processing step, there is provided a substrate processing method comprising a second preceding processing step for performing the second processing on a substrate whose posture is being changed in the second posture changing step.
請求項1乃至3の何れかに記載の基板処理方法において、
前記第1姿勢変換工程における基板の姿勢変換の際に、基板の姿勢を前記仮傾斜姿勢よりも斜度の小さい傾斜姿勢で一旦保持し、その後、前記仮傾斜姿勢に変換する
ことを特徴とする基板処理方法。
In the substrate processing method in any one of Claims 1 thru | or 3,
At the time of changing the posture of the substrate in the first posture changing step, the posture of the substrate is temporarily held at a tilt posture having a lower inclination than the temporary tilt posture, and then converted into the temporary tilt posture. Substrate processing method.
基板の搬送方向に、水平姿勢の基板に処理液を供給して第1処理を実施する第1処理部と、傾斜姿勢の基板に処理液を供給して第2処理を実施する第2処理部とが並び、基板に対して前記第1処理および第2処理を順次行う基板処理装置において、
前記第1処理部に配備され、第1処理後、基板を水平姿勢から所定の傾斜姿勢であって、かつ前記第2処理に適した姿勢として予め定められた本傾斜姿勢よりも斜度の小さい仮傾斜姿勢に変換する第1姿勢変換手段と、
基板を前記仮傾斜姿勢のままで第1処理部から第2処理部に搬送する傾斜搬送手段と、
前記第2処理部にそれぞれ配備され、基板の姿勢を前記仮傾斜姿勢から前記本傾斜姿勢に変換する第2姿勢変換手段、およびこの第2姿勢変換手段により本傾斜姿勢に変換された基板に対して処理液を供給する処理液供給手段と、を備えている
ことを特徴とする基板処理装置。
A first processing unit that supplies a processing liquid to a horizontally oriented substrate in the substrate transfer direction to perform a first process, and a second processing unit that supplies a processing liquid to a substrate in an inclined position to perform a second process In a substrate processing apparatus for sequentially performing the first processing and the second processing on the substrate,
Arranged in the first processing unit, and after the first processing, the substrate is in a predetermined inclined posture from a horizontal posture, and has a lower inclination than the main inclined posture that is predetermined as a posture suitable for the second processing. First posture converting means for converting to a temporary inclined posture;
Inclined transport means for transporting the substrate from the first processing unit to the second processing unit in the temporary tilted posture;
A second attitude conversion unit that is provided in each of the second processing units and converts the attitude of the substrate from the temporary inclination attitude to the main inclination attitude, and the substrate converted into the main inclination attitude by the second attitude conversion means. And a processing liquid supply means for supplying the processing liquid.
請求項5に記載の基板処理装置において、
前記第2処理部に、前記処理液供給手段による処理液の供給に先立ち、仮傾斜姿勢で搬送されてくる基板に対して前記第2処理用の処理液を供給する第1先行処理液供給手段が配備されている
ことを特徴とする基板処理装置。
The substrate processing apparatus according to claim 5,
Prior to the supply of the processing liquid by the processing liquid supply means to the second processing section, a first preceding processing liquid supply means for supplying the processing liquid for the second processing to the substrate conveyed in a temporary inclined posture. The substrate processing apparatus characterized by the above-mentioned.
請求項5又は6に記載の基板処理装置において、
前記第2処理部に、前記処理液供給手段による処理液の供給に先立ち、前記第2姿勢変換手段による姿勢変換中の基板に対して前記第2処理用の処理液を供給する第2先行処理液供給手段が配備されている
ことを特徴とする基板処理装置。
In the substrate processing apparatus according to claim 5 or 6,
Prior to the supply of the processing liquid by the processing liquid supply means to the second processing section, a second preceding process for supplying the processing liquid for the second processing to the substrate undergoing attitude change by the second attitude changing means. A substrate processing apparatus, wherein a liquid supply means is provided.
請求項5乃至7の何れかに記載の基板処理装置において、
前記第1姿勢変換手段は、基板の姿勢を前記仮傾斜姿勢よりも斜度の小さい傾斜姿勢に一旦保持し、その後、前記仮傾斜姿勢に変換する
ことを特徴とする基板処理装置。
The substrate processing apparatus according to any one of claims 5 to 7,
The substrate processing apparatus is characterized in that the first posture changing means temporarily holds the posture of the substrate in a tilt posture having an inclination smaller than the temporary tilt posture, and then converts the substrate posture to the temporary tilt posture.
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CN101114578B (en) 2011-08-10
KR100866001B1 (en) 2008-10-29
CN101114578A (en) 2008-01-30
TWI343088B (en) 2011-06-01
TW200818380A (en) 2008-04-16

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