JP2008028052A - Repair method of electrostatic adsorption electrode - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a repair method capable of easily and appropriately repairing a damaged portion of an electrostatic adsorption electrode.
SOLUTION: A periphery of a crack 100 is cut to form a recess 51 in a tapered shape. Next, the insulator 60 is sprayed so as to fill the recess 51 using the spraying device 202. Next, the repair coating 61 is formed by cutting the raised portion of the insulator 60 embedded in the recess 51 to flatten the surface.
[Selection] Figure 3

Description

  The present invention relates to a method for repairing an electrostatic chucking electrode, and in particular, repairing an electrostatic chucking electrode used for sucking and holding a substrate such as a glass substrate in a manufacturing process of, for example, a flat panel display (FPD). Regarding the method.

  In the manufacturing process of the FPD, plasma processing such as dry etching, sputtering, and CVD (Chemical Vapor Deposition) is performed on a glass substrate as an object to be processed. For example, a pair of parallel plate electrodes (upper electrode and lower electrode) are arranged in a chamber, a glass substrate is placed on a susceptor (substrate mounting table) that functions as a lower electrode, and then a processing gas is introduced into the chamber. A high frequency electric power is applied to at least one of the electrodes to form a high frequency electric field between the electrodes, a plasma of a processing gas is formed by the high frequency electric field, and a plasma treatment is performed on the glass substrate. At this time, the glass substrate is adsorbed and fixed by an electrostatic adsorption electrode provided on the susceptor.

  As such an electrostatic adsorption electrode, for example, an electrode having a structure in which an insulating layer, an electrode layer, and an insulating layer are sequentially laminated on a base material formed of a conductive material such as aluminum is known. In this case, by applying a voltage to the electrode layer, a Coulomb force is generated so that the glass substrate can be adsorbed and fixed.

  In the case of the electrostatic adsorption electrode having the above structure, if the electrostatic adsorption electrode surface or electrode layer is damaged due to, for example, dielectric breakdown or dropping of the instrument, the adsorption performance will be improved if left as it is. Causes a significant drop. For this reason, by separating the electrode layer of the electrostatic adsorption electrode into a plurality of parts, it is possible to ensure the adsorption performance even when dielectric breakdown occurs in a part, and to enable partial replacement of only defective parts Proposals have been made (for example, Patent Documents 1 and 2).

However, in reality, the electrostatic adsorption electrode having a configuration in which the electrode layer is divided and formed in advance as in Patent Documents 1 and 2 has hardly been put to practical use. Therefore, when the electrostatic adsorption electrode is damaged, it is normal to replace the entire electrostatic adsorption electrode, and partial repair has not been performed. The reason for this is that in the case of partial repair, if the damaged part is improperly repaired, the functional recovery of the electrostatic chucking electrode will be insufficient and satisfactory suction retention performance will not be obtained. It is mentioned that abnormal discharge may occur from the location.
In addition, there are various patterns such as shallow cracks, deep cracks reaching the electrode layer, large cracks, and a large number of small cracks covering a wide range of damage to the electrostatic adsorption electrode. It is also difficult to cope with the damage of the pattern.

For the reasons described above, even when a small crack or the like has occurred in the past, the entire electrostatic chucking electrode has been replaced, increasing the maintenance cost of a substrate processing apparatus such as an etching apparatus equipped with the electrostatic chucking electrode. It was one of the causes.
Japanese Patent Laid-Open No. 5-291562 (FIG. 1 etc.) JP 2005-51217 A (FIG. 3 etc.)

  This invention is made | formed in view of the said situation, and makes it a subject to provide the repair method which can repair the damage site | part of an electrostatic adsorption electrode simply and appropriately.

In order to solve the above-mentioned problem, a first aspect of the present invention is that a coating covering the surface of a substrate is formed, the coating comprising an electrode layer, a first insulating layer below the electrode layer, and the electrode A second insulating layer above the layer, and a method of repairing an electrostatic adsorption electrode that holds the substrate by applying a voltage to the electrode layer,
A cutting process for cutting and removing the defective portion and the surrounding coating;
A film regeneration process for forming a new repair film on the portion removed by the cutting;
A method for repairing an electrostatic chucking electrode is provided.

In the first aspect, the repair coating may be formed of an insulating material, or may be formed by laminating an insulating material and a conductive material. In these cases, as the insulating material, a material different from the material constituting the first insulating layer and the second insulating layer can be used.
In the cutting step, the coating is cut to form a recess, and in the coating regeneration step, the repair coating is preferably formed in the recess by thermal spraying. In this case, in the cutting step, it is preferable to form the recess so as not to cut the electrode layer, or to form the recess so as to be tapered as a whole.
Moreover, it is preferable that an electrostatic adsorption electrode is an electrostatic adsorption electrode used for manufacture of a flat panel display, and in this case, a glass substrate may be adsorbed and held.

  According to the repair method of the present invention, when damage occurs to the coating of the electrostatic chucking electrode, partial repair can be performed by a simple method according to the degree of damage. Therefore, it is not necessary to replace the entire electrostatic adsorption electrode, and the cost associated with maintenance can be reduced. An electrostatic attraction electrode for attracting and holding a large FPD substrate is particularly advantageous because it increases the cost that can be saved by enabling partial repairs without being replaced entirely.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view showing a plasma etching apparatus which is an example of a substrate processing apparatus provided with an electrostatic chucking electrode to which the repairing method of the present invention can be applied. As shown in FIG. 1, the plasma etching apparatus 1 is configured as a capacitively coupled parallel plate plasma etching apparatus that performs etching on a substrate G such as an FPD glass substrate which is a rectangular object to be processed. Here, the FPD includes a liquid crystal display (LCD), a light emitting diode (LED) display, an electroluminescence (EL) display, a fluorescent display tube (VFD), a plasma display panel (PDP), and the like. Illustrated. The substrate processing apparatus of the present invention is not limited to a plasma etching apparatus.

  This plasma etching apparatus 1 has a chamber 2 formed into a rectangular tube shape made of aluminum, for example, whose surface is anodized (anodized). A prismatic insulating plate 3 made of an insulating material is provided at the bottom of the chamber 2, and a susceptor 4 on which the substrate G is placed is provided on the insulating plate 3. The susceptor 4 that is a substrate mounting table includes a susceptor base 4a and an electrostatic chuck 40 as an electrostatic chucking electrode provided on the susceptor base 4a. Note that the outer periphery of the susceptor base 4 a is covered with an insulating material 5.

  The electrostatic chuck 40 has a rectangular shape in plan view, and has a base 41 made of a conductive material such as aluminum. A first insulating layer 42, an electrode 43, and a second insulating layer 44 are stacked on the upper surface of the base material 41 in order from the bottom. The electrostatic chuck 40 applies a DC voltage to the electrode 43 between the first insulating layer 42 and the second insulating layer 44 from the DC power source 26 via the feeder line 27, for example, by Coulomb force. The substrate G is electrostatically adsorbed. A substrate holding surface 50 for attracting and holding the substrate G is formed on the upper surface of the electrostatic chuck 40 (the upper surface of the second insulating layer 44) (see FIGS. 2 to 8).

The insulating plate 3, the susceptor base 4a, and the electrostatic chuck 40 are formed with gas passages 9 penetrating them. Through this gas passage 9, a heat transfer gas such as He gas is supplied to the back surface of the substrate G that is the object to be processed.
That is, the heat transfer gas supplied to the gas passage 9 once diffuses in the horizontal direction through the gas reservoir 9a formed at the boundary between the susceptor base 4a and the base 41 of the electrostatic chuck 40, and then electrostatically The gas passes through the gas supply communication hole 9 b formed in the chuck 40 and is ejected from the surface of the electrostatic chuck 40 to the back side of the substrate G. In this way, the cold heat of the susceptor 4 is transmitted to the substrate G, and the substrate G is maintained at a predetermined temperature.

  A heat transfer medium chamber 10 is provided inside the susceptor substrate 4a. In this heat transfer medium chamber 10, for example, a heat transfer medium such as a fluorinated liquid is introduced through the heat transfer medium introduction pipe 10 a and is discharged through the heat transfer medium discharge pipe 10 b and circulates. The cold heat is transferred from the susceptor base 4a to the substrate G through the heat transfer medium.

  Above the susceptor 4, a shower head 11 that functions as an upper electrode is provided in parallel with the susceptor 4. The shower head 11 is supported on the upper part of the chamber 2, has an internal space 12 inside, and has a plurality of discharge holes 13 for discharging a processing gas on the surface facing the susceptor 4. The shower head 11 is grounded and forms a pair of parallel plate electrodes together with the susceptor 4.

A gas inlet 14 is provided on the upper surface of the shower head 11, and a processing gas supply pipe 15 is connected to the gas inlet 14. A valve 16 and a mass flow controller 17 are connected to the processing gas supply pipe 15. A processing gas supply source 18 is connected to the via. A processing gas for etching is supplied from the processing gas supply source 18. As the processing gas, for example, a gas usually used in this field such as a halogen-based gas, O ₂ gas, Ar gas, or the like can be used.

  An exhaust pipe 19 is connected to the lower portion of the side wall of the chamber 2, and an exhaust device 20 is connected to the exhaust pipe 19. The exhaust device 20 includes a vacuum pump such as a turbo molecular pump, and is configured so that the inside of the chamber 2 can be evacuated to a predetermined reduced pressure atmosphere. Further, a substrate loading / unloading port 21 and a gate valve 22 for opening and closing the substrate loading / unloading port 21 are provided on the side wall of the chamber 2, and a load lock chamber adjacent to the substrate G with the gate valve 22 opened. (Not shown).

  A power supply line 23 for supplying high frequency power is connected to the susceptor 4, and a matching unit 24 and a high frequency power supply 25 are connected to the power supply line 23. For example, high frequency power of 13.56 MHz is supplied from the high frequency power supply 25 to the susceptor 4.

  Next, the processing operation in the plasma etching apparatus 1 configured as described above will be described. First, the substrate G, which is an object to be processed, is loaded into the chamber 2 from the load lock chamber (not shown) through the substrate loading / unloading port 21 after the gate valve 22 is opened, and the electrostatic charge formed on the susceptor 4. It is placed on the chuck 40. In this case, the transfer of the substrate G is performed through a lifter pin (not shown) provided so as to be able to protrude from the susceptor 4 through the inside of the susceptor 4. Thereafter, the gate valve 22 is closed, and the inside of the chamber 2 is evacuated to a predetermined vacuum level by the exhaust device 20.

  Thereafter, the valve 16 is opened, and the flow rate of the processing gas from the processing gas supply source 18 is adjusted by the mass flow controller 17, while passing through the processing gas supply pipe 15 and the gas inlet 14 to the internal space 12 of the shower head 11. Then, the pressure is uniformly discharged to the substrate G through the discharge holes 13, and the pressure in the chamber 2 is maintained at a predetermined value.

  In this state, high-frequency power is applied from the high-frequency power supply 25 to the susceptor 4 through the matching unit 24, thereby generating a high-frequency electric field between the susceptor 4 serving as the lower electrode and the shower head 11 serving as the upper electrode. Is dissociated and turned into plasma, whereby the substrate G is etched. At this time, by applying a predetermined voltage from the DC power source 26 to the electrode 43 of the electrostatic chuck 40, the substrate G is attracted and held on the electrostatic chuck 40 by, for example, Coulomb force. Further, by supplying the heat transfer gas to the back surface side of the substrate G through the gas passage 9, the temperature is adjusted efficiently.

  After performing the etching process in this manner, the application of the high frequency power from the high frequency power supply 25 is stopped, the gas introduction is stopped, and then the pressure in the chamber 2 is reduced to a predetermined pressure. Then, the gate valve 22 is opened, and the substrate G is unloaded from the chamber 2 to the load lock chamber (not shown) via the substrate loading / unloading port 21, thereby completing the etching process for the substrate G. Thus, the substrate G can be electrostatically adsorbed by the electrostatic chuck 40 and the substrate G can be etched while the temperature is adjusted.

Next, details of the repair method of the present invention will be described with reference to FIGS.
<First Embodiment>
FIG. 2 schematically shows a broken state in the electrostatic chuck 40. In FIG. 2, the portion surrounded by the symbol A indicates a state where a shallow crack 100 is generated near the surface of the second insulating layer 44. Further, the portion surrounded by the symbol B shows a state in which a crack 100 a reaching the boundary between the second insulating layer 44 and the electrode 43 has occurred. In this way, when a relatively minor damage that stops in the second insulating layer 44 occurs, the degree of repair may be minor. Hereinafter, the repair of the crack 100 will be described as an example.

  3A to 3E show a process procedure for repairing the crack 100. FIG. FIG. 3A shows an enlarged view of a portion A in FIG. 2, that is, a crack 100. The crack 100 is formed in the thickness direction of the second insulating layer 44 from the substrate holding surface 50 on the surface of the electrostatic chuck 40 toward the base material 41, but does not reach the electrode 43, and the second insulating layer It stops in the middle of 44. In repairing such a breakage (crack 100), as shown in FIG. 3B, first, the periphery of the crack 100 is cut using a cutting means 201 such as a portal cutting machine to form the recess 51. . The recess 51 is preferably formed so as not to reach the electrode 43 and is formed in a tapered shape (mortar shape).

Next, as shown in FIG. 3C, the insulator 60 is sprayed so as to fill the recess 51 using the spraying device 202. The insulator 60 is preferably made of the same insulating material as that of the second insulating layer 44, for example, ceramics such as alumina (Al ₂ O ₃ ). However, the insulating material is different from the second insulating layer 44, for example, an epoxy-based material. It is also possible to use a synthetic resin such as silicone.

  In addition, the insulator 60 can be filled in the recess 51 by, for example, manual work. In this case, it is preferable to use an insulating material having both insulating properties and adhesive properties. For example, it is preferable to use a synthetic resin such as an epoxy resin or a silicone resin. By filling the recess 51 with an insulating material such as synthetic resin having adhesiveness, it is possible to perform an emergency treatment at the site of use of the plasma etching apparatus 1, and the plasma etching apparatus resulting from the defect of the electrostatic chuck 40. 1 downtime can be reduced as much as possible. In this way, the repair method of embedding the insulator 60 in the recess 51 is highly useful as an emergency treatment at the site of use of the plasma etching apparatus 1, but other than the emergency treatment, for example, when the area of the repair site is relatively small, etc. Applicable.

  Next, as shown in FIG. 3D, after the recess 51 is embedded, the raised portion of the insulator 60 formed by thermal spraying is planarized using a cutting means 201 or the like. Thereby, as shown in FIG. 3E, a repair coating 61 that is substantially flush with the surface of the second insulating layer 44 is formed, and repair of the damaged portion is completed. Note that the surface of the repair coating 61 may not protrude from the surface of the second insulating layer 44.

  According to the present embodiment, the electrostatic chuck 40 can be partially repaired by a simple method of removing the defective portion by cutting and forming the repair coating 61. Therefore, it is not necessary to replace the entire electrostatic chuck 40 due to a partial failure, and the maintenance cost can be greatly reduced.

  In addition, by using the repair method of the present embodiment for emergency repair at the site where the plasma etching apparatus 1 is used, the downtime of a substrate processing apparatus such as an etching apparatus provided with the electrostatic chuck 40 can be reduced as much as possible. .

  When repairing the crack 101a (symbol B in FIG. 2) reaching the boundary between the second insulating layer 44 and the electrode 43, cutting is performed until the electrode 43 is exposed at the bottom of the recess 51 in FIG. As the shape in that case, the wall of the cut portion (recessed portion 51) is not vertical, and the distance from the electrode 43 to the surface of the second insulating layer 44 is long, and the shape is sufficient. It is preferable to cut into a shape that can ensure insulation performance. Except for the above, repairs can be performed according to the procedure of FIGS. 3B to 3E.

<Second Embodiment>
FIG. 4A is an enlarged view of a range surrounded by reference numeral C in FIG. 2, and the crack 101 has a depth reaching the first insulating layer 42 via the electrode 43 from the surface of the second insulating layer 44. The resulting state is shown. The same applies when a breakdown voltage failure occurs in the first insulating layer 42.

  When the crack 101 having a depth reaching the first insulating layer 42 through the electrode 43 is generated, the cutting means 201 is used to cut the second insulating layer 44 from the surface as shown in FIG. The recesses 52 are formed by cutting the electrode 43 and the first insulating layer 42. The recess 52 is formed deeper and larger in diameter than the recess 51 according to the repair method of the first embodiment. When the crack 101 is formed deeper and is formed over the entire thickness direction of the first insulating layer 42, cutting may be performed until the base material 41 is exposed at the bottom of the recess 52.

  When forming the recessed part 52 by cutting, it is preferable to form in a taper shape (mortar shape) as a whole so that the recessed part 52 may expand toward the surface side of the 2nd insulating layer 44 from the bottom part. That is, the side wall 52a of the recess 52 does not rise vertically from the bottom of the recess 52 but is formed obliquely at a predetermined angle θ exceeding 90 degrees. The angle θ varies depending on the depth of the recess 52, but is preferably about 135 degrees, for example. By inclining the side wall 52a of the recess 52 in this way, the distance of the side wall 52a (that is, the length from the electrode 43 side toward the surface of the electrostatic chuck 40) can be taken sufficiently. Resistance can be improved. In addition, the recessed part 52 should just be a taper shape as a whole, for example, may have the part cut horizontally in the middle of the inclined side wall 52a.

Next, as shown in FIG. 4C, the thermal spraying apparatus 202 is used to sequentially spray the insulator 62, the conductive film 63, and the insulator 64 so as to fill the recess 52, thereby forming a multilayer sprayed film. At this time, for the insulators 62 and 64, the same material as the first insulating layer 42 and the second insulating layer 44, for example, ceramics such as alumina (Al ₂ O ₃ ) can be used. It is also possible to use an insulating material of a different type from the layer 42 and the second insulating layer 44, such as zirconia (ZrO ₂ ), 2 magnesia silica (M2S; 2MgO · SiO ₂ ), yttrium fluoride (YF ₃ ), and the like. . For the conductive film 63, the same material as the electrode 43, for example, tungsten (W), molybdenum (Mo), or the like can be used.

  Further, without forming the conductive film 63, the recess 52 can be filled only with an insulator, for example, by manual work. In this case, it is preferable to use an insulating material having both insulating properties and adhesive properties. For example, it is preferable to use a synthetic resin such as an epoxy resin or a silicone resin. In this way, the repair method of embedding only the insulator has high utility value as an emergency treatment at the site of use of the plasma etching apparatus 1, but can be applied to cases other than the emergency treatment, for example, when the area of the repair site is relatively small. is there.

  Next, after the recess 52 is buried, as shown in FIG. 4D, the insulator 64 that is raised above the upper surface of the second insulating layer 44 is cut by the cutting means 201 to flatten the surface. Thereby, as shown in FIG. 4E, the repair coating 65 is formed substantially flush with the surface of the second insulating layer 44, and the repair of the damaged portion is completed. Note that the surface of the repair coating 65 may not protrude from the surface of the second insulating layer 44.

  Also in this embodiment, as in the first embodiment, partial repair of the electrostatic chuck 40 can be performed by a simple method of removing defective portions by cutting and forming a repair coating. It is not necessary to replace the entire electrostatic chuck 40 due to a defect, and the maintenance cost can be greatly reduced. In addition, by filling the recess 52 with an insulator, it is possible to perform an emergency treatment at the site of use of the plasma etching apparatus 1, and to minimize the downtime of the plasma etching apparatus 1 due to the defect of the electrostatic chuck 40. Can be reduced.

In the first embodiment and the second embodiment, a large number of convex portions (smaller portions) are used to support the lower surface of the substrate G on the substrate holding surface 50 (the surface of the second insulating layer 44) of the electrostatic chuck 40. When the protrusions 53 are formed, as shown in FIG. 5, the height h ₁ of the convex portion 54 in the newly formed repair film 61 (or the repair film 65) is the second insulating layer 44. It is preferable to form it lower than the height h ₀ of the convex portion 53 originally formed on the surface. This is because if the height h ₁ of the convex portion 54 newly formed by repair is higher than the height h ₀ of the convex portion 53 formed in the peripheral unrepaired region, the lower surface of the substrate G is supported. This is because the height may become non-uniform, which may cause non-uniform processing contents such as uneven etching.

<Third Embodiment>
FIG. 6A relates to another example of breakage in the electrostatic chuck 40, and a plurality of shallow cracks are present in a wide range near the surface of the second insulating layer 44 (portion indicated by symbol D in FIG. 6). 102 shows a state in which occurrence occurs. In such a case, as shown in FIG. 6B, the entire surface of the second insulating layer 44 is cut from the surface of the second insulating layer 44, and the surface layer of the second insulating layer 44 in which the crack 102 is formed is predetermined. Remove with a thickness of.

Next, as shown in FIG. 6C, the surface after the surface layer of the second insulating layer 44 is removed is sprayed using the thermal spraying device 202, and the surface of the second insulating layer 44 The repair is completed by forming a new repair film 66 on the surface. As the thermal spray material at this time, it is preferable to use an insulating material similar to that of the second insulating layer 44, for example, ceramics such as alumina (Al ₂ O ₃ ). In addition, as the thermal spray material, a different type of insulating material from the second insulating layer 44, such as zirconia (ZrO ₂ ), 2 magnesia silica (M 2 S; 2MgO · SiO ₂ ), yttrium fluoride (YF ₃ ), or the like may be used. Is possible.

  Also in this embodiment, the electrostatic chuck 40 can be partially repaired by a simple method of removing the surface layer of the second insulating layer 44 by cutting and forming a repair coating by thermal spraying. There is no need to replace the entire system, and maintenance costs can be greatly reduced.

<Fourth embodiment>
FIG. 7A relates to another example of a broken state in the electrostatic chuck 40, and a side insulating layer that covers a side portion of the electrostatic chuck 40 (portions indicated by reference numerals E and F in FIG. 7). 45 shows a state in which cracks 103a and 103b are generated. When cracks 103a and 103b are generated in the side insulating layer 45, as shown in FIG. 7B, the side insulating layer 45 is cut around the entire circumference by using the cutting means 201, and the cracks 103a and 103b are cut. The entire coating on the side portion of the electrostatic chuck 40 including the portion where is formed is removed.

Next, as shown in FIG. 7C, the thermal spraying apparatus 202 is used to perform thermal spraying on the electrostatic chuck 40 from which the side insulating layer 45 has been removed, thereby forming a new side insulating layer 67. The repair is completed. As a thermal spray material for forming the side insulating layer 67, it is preferable to use an insulating material similar to that of the original side insulating layer 45, for example, ceramics such as alumina (Al ₂ O ₃ ). Further, as the thermal spray material, a different type of insulating material from the original side insulating layer 45, for example, zirconia (ZrO ₂ ), 2 magnesia silica (M2S; 2MgO · SiO ₂ ), yttrium fluoride (YF ₃ ) or the like is used. Is also possible.

  Here, the reason for forming the side insulating layer 67 by removing the side insulating layer 45 over the entire periphery is as follows. FIG. 8A shows a state in which the cracks 103a and 103b at portions indicated by reference symbols E and F in FIG. 7A are repaired by a local repair method such as partial spraying or embedding of an insulator. It is a principal part top view which shows typically the state. As shown in FIG. 8A, in the case where the cracks 103a and 103b are locally repaired in the side insulating layer 45, the space between the insulator 60a and the unrepaired side insulating layer 45 around the insulator 60a. A boundary L is formed at When the boundary L is formed from the electrode 43 side to the outside of the electrostatic chuck 40 in this way, electrical leakage is likely to occur along the boundary L. Therefore, it is preferable to select a repair method in which such a boundary L is not formed. Therefore, in the present embodiment, the side insulating layer 45 is temporarily removed from the side insulating layer 45 without performing local repair. After peeling off peripherally, a method of re-forming the side insulating layer 67 as shown in FIG.

  Also in this embodiment, the electrostatic chuck 40 can be partially repaired by a simple method of removing the side insulating layer 45 by cutting and forming a new side insulating layer 67 by thermal spraying. It is no longer necessary to replace the entire battery, and maintenance costs can be greatly reduced.

<Fifth Embodiment>
FIG. 9A relates to another example of breakage in the electrostatic chuck 40. The entire covering layer of the electrostatic chuck 40, that is, the first insulating layer 42, the electrode 43, the second insulating layer 44, and the like. A state in which a large number of cracks 104 have occurred throughout the side insulating layer 45 is shown. As described above, when a large number of cracks occur over the entire coating layer of the electrostatic chuck 40, the coating layer is used until the base material 41 is exposed using the cutting means 201 as shown in FIG. 9B. To remove all the coating layer.

Next, as shown in FIG. 9C, thermal spraying is performed on the base material 41 from which the coating layer has been completely removed using a thermal spraying device 202, and a new coating layer is formed on the surface of the base material 41. That is, the first insulating layer 68, the electrode 69, and the second insulating layer 70 are sequentially sprayed and laminated on the upper surface of the base material 41, and the repair is completed by forming the side insulating layer 71. To do. The newly formed electrode 69 is provided with a power supply line 27 from the DC power supply 26. At this time, as a thermal spray material used for forming the first insulating layer 68, the second insulating layer 70, and the side insulating layer 71, an insulating material made of the same material as the original insulating layers, such as alumina (Al ₂ O _{3), is used.} It is preferable to use ceramics such as As the thermal spray material, other types of insulating materials such as zirconia (ZrO ₂ ), 2 magnesia silica (M 2 S; 2MgO · SiO ₂ ), yttrium fluoride (YF ₃ ), and the like can be used.

  Also in this embodiment, it is not necessary to replace the entire electrostatic chuck 40 by regenerating the coating layer according to the above procedure, and the base material 41 can be reused. Therefore, the maintenance cost is reduced compared to the case where the entire electrostatic chuck 40 is replaced. It becomes possible to do.

  While the present invention has been described with reference to some embodiments, the present invention is not limited to the above embodiments, and various modifications are possible. For example, the processing apparatus of the present invention has been described by exemplifying a RIE type capacitively coupled parallel plate plasma etching apparatus that applies high-frequency power to the lower electrode. Further, the inductive coupling type is not limited to the capacitive coupling type. Further, the present invention can be applied not only to an etching apparatus but also to other types of plasma processing apparatuses that perform ashing, CVD film formation, and the like.

  Further, the substrate to be processed is not limited to a glass substrate for FPD but may be a semiconductor wafer.

Sectional drawing which shows the plasma etching apparatus provided with the electrostatic chuck which can apply the repair method of this invention. It is sectional drawing with which it uses for description of the electrostatic chuck which the damage which can be repaired with the repair method of this invention produced. It is drawing which shows the process sequence of the repair method which concerns on 1st Embodiment of this invention. It is drawing which shows the process sequence of the repair method which concerns on 2nd Embodiment of this invention. It is an enlarged view explaining the convex part formed in the surface of an electrostatic chuck. It is drawing which shows the process sequence of the repair method which concerns on 3rd Embodiment of this invention. It is drawing which shows the process sequence of the repair method which concerns on 4th Embodiment of this invention. It is drawing explaining the repair aspect of a side part insulating layer, (a) is a principal part top view which shows the state after local repair, (b) is a top view which shows the state after all-around repair. It is drawing which shows the process sequence of the repair method which concerns on 5th Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Plasma etching apparatus 2 Chamber 3 Insulating board 4 Susceptor 5 Insulating material 11 Shower head 20 Exhaust apparatus 25 High frequency power supply 40 Electrostatic chuck 41 Base material 42 1st insulating layer 43 Electrode 44 2nd insulating layer 45 Side part insulating layer 50 Substrate holding surface 60, 60a Insulator 61, 65, 66, 67, 68, 69, 70, 71 Repair coating 100, 100a, 101, 102, 103a, 103b, 104 Crack

Claims (9)

A coating covering the surface of the substrate is formed, and the coating includes an electrode layer, a first insulating layer below the electrode layer, and a second insulating layer above the electrode layer. A method of repairing an electrostatic chucking electrode that holds the substrate by suction by applying a voltage to the electrode layer,
A cutting process for cutting and removing the defective portion and the surrounding coating;
A film regeneration process for forming a new repair film on the portion removed by the cutting;
A method for repairing an electrostatic chucking electrode.   The method of repairing an electrostatic attraction electrode according to claim 1, wherein the repair coating is formed of an insulating material.   The method of repairing an electrostatic adsorption electrode according to claim 1, wherein the repair coating is formed by laminating an insulating material and a conductive material.   The method for repairing an electrostatic chucking electrode according to claim 2 or 3, wherein a material different from the material constituting the first insulating layer and the second insulating layer is used as the insulating material. . In the cutting step, the coating is cut to form a recess,
5. The method of repairing an electrostatic attraction electrode according to claim 1, wherein, in the coating regeneration process, the repair coating is formed in the concave portion by thermal spraying.   The method of repairing an electrostatic chucking electrode according to claim 5, wherein in the cutting step, the concave portion is formed so as not to cut the electrode layer.   The method for repairing an electrostatic chucking electrode according to claim 5, wherein in the cutting step, the concave portion is formed so as to have a tapered shape as a whole.   The method for repairing an electrostatic adsorption electrode according to any one of claims 1 to 7, wherein the electrostatic adsorption electrode is used for manufacturing a flat panel display. The method for repairing an electrostatic chucking electrode according to any one of claims 1 to 8, wherein the glass substrate is sucked and held.

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