JP2008026018A - 圧電単結晶振動子および圧電振動ジャイロ - Google Patents
圧電単結晶振動子および圧電振動ジャイロ Download PDFInfo
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- JP2008026018A JP2008026018A JP2006195548A JP2006195548A JP2008026018A JP 2008026018 A JP2008026018 A JP 2008026018A JP 2006195548 A JP2006195548 A JP 2006195548A JP 2006195548 A JP2006195548 A JP 2006195548A JP 2008026018 A JP2008026018 A JP 2008026018A
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- 239000013078 crystal Substances 0.000 title claims abstract description 73
- 239000000463 material Substances 0.000 claims description 15
- 239000000853 adhesive Substances 0.000 claims description 12
- 230000001070 adhesive effect Effects 0.000 claims description 12
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 50
- 238000009413 insulation Methods 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 55
- 238000010586 diagram Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 18
- 239000010931 gold Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000005488 sandblasting Methods 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- -1 langasite Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
【解決手段】 圧電単結晶振動子1において、4つのアーム部12a、12b、12c、12dがつながっている中央部に、検出電極15、16、17、18および基準電位電極19を覆い隠すように形成されている絶縁膜20により、各々の電極は電気的に絶縁され、他電極との短絡不良の発生を防ぐことができ、信頼性を高めつつ、歩留の向上を可能にする。
【選択図】 図1
Description
11a〜11d 付加質量部
12a〜12d アーム部
13a、13b、14a、14b 駆動電極
15、16、17、18 検出電極
19 基準電位電極
20、38 絶縁膜
31a〜31d 付加質量部
32a〜32h アーム部
33、34 駆動電極
35a、35b、36、37a〜37c 検出電極
39a、39b 絶縁膜の開口部
40a〜40d 接続部
Claims (3)
- 圧電単結晶材料から成る圧電単結晶板の表面または裏面の少なくとも一面の主面上に電極が形成されており、導電接着剤によって、回路基板と電気的に導通し、かつ機械的に固定されてなる圧電単結晶振動子であって、少なくとも2本の同電位の電極を含む複数本の電極が配線されている部分に、絶縁膜を形成し、前記絶縁膜を介して、前記少なくとも2本の同電位の電極を絶縁状態にて直接接続し、1本の電極配線と成したことを特徴とする圧電単結晶振動子。
- 前記絶縁膜は、SiO2、Si3N4、ポリイミド、フォトレジストから選ばれる少なくとも1種からなることを特徴とする請求項1に記載の圧電単結晶振動子。
- 前記請求項1または2に記載の圧電単結晶振動子を用いて構成されたことを特徴とする圧電振動ジャイロ。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006195548A JP5030135B2 (ja) | 2006-07-18 | 2006-07-18 | 圧電単結晶振動子および圧電振動ジャイロ |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006195548A JP5030135B2 (ja) | 2006-07-18 | 2006-07-18 | 圧電単結晶振動子および圧電振動ジャイロ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008026018A true JP2008026018A (ja) | 2008-02-07 |
| JP5030135B2 JP5030135B2 (ja) | 2012-09-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2006195548A Expired - Fee Related JP5030135B2 (ja) | 2006-07-18 | 2006-07-18 | 圧電単結晶振動子および圧電振動ジャイロ |
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| JP (1) | JP5030135B2 (ja) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2088101A2 (en) | 2008-02-06 | 2009-08-12 | Seiko Epson Corporation | Medium delivery apparatus and medium processing apparatus |
| US8516886B2 (en) | 2010-04-30 | 2013-08-27 | Qualcomm Mems Technologies, Inc. | Micromachined piezoelectric X-Axis gyroscope |
| WO2013132830A1 (ja) * | 2012-03-09 | 2013-09-12 | パナソニック株式会社 | 慣性力センサ |
| KR101378601B1 (ko) * | 2012-06-13 | 2014-03-24 | (주) 태양기전 | 터치 윈도우 및 이의 전극 구조 제조 방법 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10371521B2 (en) | 2016-05-26 | 2019-08-06 | Honeywell International Inc. | Systems and methods for a four-mass vibrating MEMS structure |
| US10696541B2 (en) | 2016-05-26 | 2020-06-30 | Honeywell International Inc. | Systems and methods for bias suppression in a non-degenerate MEMS sensor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004364019A (ja) * | 2003-06-05 | 2004-12-24 | Seiko Epson Corp | 圧電振動片、圧電振動子、圧電発振器、ジャイロスコープセンサ、電子機器、及び製造方法 |
| JP2005210475A (ja) * | 2004-01-23 | 2005-08-04 | Murata Mfg Co Ltd | 電子部品及びその製造方法 |
| JP2005291858A (ja) * | 2004-03-31 | 2005-10-20 | Sony Corp | 振動型ジャイロセンサ素子 |
-
2006
- 2006-07-18 JP JP2006195548A patent/JP5030135B2/ja not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004364019A (ja) * | 2003-06-05 | 2004-12-24 | Seiko Epson Corp | 圧電振動片、圧電振動子、圧電発振器、ジャイロスコープセンサ、電子機器、及び製造方法 |
| JP2005210475A (ja) * | 2004-01-23 | 2005-08-04 | Murata Mfg Co Ltd | 電子部品及びその製造方法 |
| JP2005291858A (ja) * | 2004-03-31 | 2005-10-20 | Sony Corp | 振動型ジャイロセンサ素子 |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2088101A2 (en) | 2008-02-06 | 2009-08-12 | Seiko Epson Corporation | Medium delivery apparatus and medium processing apparatus |
| EP2319785A1 (en) | 2008-02-06 | 2011-05-11 | Seiko Epson Corporation | Medium delivery apparatus and medium processing apparatus |
| US9032796B2 (en) | 2010-04-30 | 2015-05-19 | Qualcomm Mems Technologies, Inc. | Stacked lateral overlap transducer (SLOT) based three-axis accelerometer |
| US8516887B2 (en) | 2010-04-30 | 2013-08-27 | Qualcomm Mems Technologies, Inc. | Micromachined piezoelectric z-axis gyroscope |
| US8584522B2 (en) | 2010-04-30 | 2013-11-19 | Qualcomm Mems Technologies, Inc. | Micromachined piezoelectric x-axis gyroscope |
| US9021880B2 (en) | 2010-04-30 | 2015-05-05 | Qualcomm Mems Technologies, Inc. | Micromachined piezoelectric three-axis gyroscope and stacked lateral overlap transducer (slot) based three-axis accelerometer |
| US8516886B2 (en) | 2010-04-30 | 2013-08-27 | Qualcomm Mems Technologies, Inc. | Micromachined piezoelectric X-Axis gyroscope |
| US9410805B2 (en) | 2010-04-30 | 2016-08-09 | Qualcomm Mems Technologies, Inc. | Micromachined piezoelectric z-axis gyroscope |
| US9459099B2 (en) | 2010-04-30 | 2016-10-04 | Qualcomm Mems Technologies, Inc. | Micromachined piezoelectric x-axis gyroscope |
| US9605965B2 (en) | 2010-04-30 | 2017-03-28 | Snaptrack, Inc. | Micromachined piezoelectric x-axis gyroscope |
| US10209072B2 (en) | 2010-04-30 | 2019-02-19 | Snaptrack Inc. | Stacked lateral overlap transducer (SLOT) based three-axis accelerometer |
| WO2013132830A1 (ja) * | 2012-03-09 | 2013-09-12 | パナソニック株式会社 | 慣性力センサ |
| CN104185773A (zh) * | 2012-03-09 | 2014-12-03 | 松下电器产业株式会社 | 惯性力传感器 |
| JPWO2013132830A1 (ja) * | 2012-03-09 | 2015-07-30 | パナソニックIpマネジメント株式会社 | 慣性力センサ |
| KR101378601B1 (ko) * | 2012-06-13 | 2014-03-24 | (주) 태양기전 | 터치 윈도우 및 이의 전극 구조 제조 방법 |
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| Publication number | Publication date |
|---|---|
| JP5030135B2 (ja) | 2012-09-19 |
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