JP2008016862A - Solid-state image sensor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device, and a solid imaging apparatus that can be efficiently used by arranging efficiently a color filter on the photoelectric conversion device. <P>SOLUTION: A plurality of low-sensitive imaging pixels 10 and a plurality of high-sensitive imaging pixels 20 are arranged respectively in a tetragonal lattice, while each pixel is displaced each other a half of each arrangement pitch in the line direction X and column direction Y. The detected charge of each low-sensitive pixel 10 and high-sensitive pixel 20 transfer signal charges to an output member 50 through a plurality of vertical transfer members 30 and horizontal transfer members 40 to output a potential signal 51 corresponding to the signal charges from the output member 50. The color filters are placed above each of the low-sensitive pixels 10 and high-sensitive pixels 20. The color filters have Bayer array respectively. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a solid-state imaging device including a plurality of photoelectric conversion elements disposed on a surface of a semiconductor substrate in a row direction and a column direction orthogonal thereto.

  Since a solid-state imaging device used for a digital camera detects charges corresponding to an image signal by a photoelectric conversion device, it is generally difficult to widen the dynamic range. Therefore, in order to obtain an image with a wide dynamic range, a process of continuously performing high-sensitivity shooting and low-sensitivity shooting in a short time and combining the two acquired images is employed. However, since the two images to be combined are not images at the same time, there is a problem that when a moving subject is photographed, the image becomes unnatural.

  Another solution is a relatively high-sensitivity photoelectric conversion element (hereinafter sometimes referred to as “high-sensitivity pixel”) for a solid-state imaging device, and a relatively low-sensitivity photoelectric conversion element (hereinafter, “ A solid-state imaging device having a low-sensitivity pixel ”). In this case, in order to detect a color image signal, a color filter is provided above the high sensitivity pixel and the low sensitivity pixel.

  An object of this invention is to provide the solid-state image sensor which can arrange | position efficiently a photoelectric conversion element and its upper color filter, and can utilize it efficiently.

  A solid-state imaging device according to the present invention is a solid-state imaging device including a plurality of photoelectric conversion elements arranged on a semiconductor substrate surface in a row direction and a column direction orthogonal thereto, and is arranged above the photoelectric conversion elements. The photoelectric conversion element includes a first photoelectric conversion element arranged in a square lattice pattern in a row direction and a column direction orthogonal thereto, and a square lattice pattern in a row direction and a column direction orthogonal thereto And the first photoelectric conversion element and the second photoelectric conversion element have the same arrangement pitch and are arranged in the row direction by a half of the arrangement pitch with respect to each other. The color filters arranged above the first photoelectric conversion elements and the color filters arranged above the second photoelectric conversion elements are arranged at positions shifted in the column direction, respectively. Is what

  ADVANTAGE OF THE INVENTION According to this invention, a photoelectric conversion element and the color filter above it can be arrange | positioned efficiently, and can be utilized efficiently.

  In the solid-state imaging device of the present invention, the first photoelectric conversion element is a plurality of high-sensitivity photoelectric conversion elements that perform relatively high-sensitivity photoelectric conversion, and the second photoelectric conversion element is relatively low. This includes a plurality of low-sensitivity photoelectric conversion elements that perform sensitivity photoelectric conversion.

  According to the present invention, a high-sensitivity pixel, a low-sensitivity pixel, and a color filter thereabove can be efficiently arranged and used efficiently.

  The solid-state imaging device of the present invention further includes a vertical transfer unit that transfers charges from the photoelectric conversion element in the column direction, a horizontal transfer unit that transfers charges from the vertical transfer unit in the row direction, and An output unit that outputs a signal corresponding to the charge transferred by the horizontal transfer unit, and the vertical transfer unit is formed on the semiconductor substrate corresponding to the plurality of photoelectric conversion elements arranged in a column direction. A plurality of vertical transfer channels, a plurality of vertical transfer electrodes formed so as to intersect each of the vertical transfer channels in plan view, and a charge readout for reading out the charge of the photoelectric conversion element to the vertical transfer channel The vertical transfer channel has a meandering shape extending in the column direction as a whole between the photoelectric conversion elements, and the vertical transfer electrode as a whole between the photoelectric conversion elements. It has a meandering shape extending in the row direction, and the charge readout region of the first photoelectric conversion element and the charge readout region of the second photoelectric conversion element correspond to the different vertical transfer electrodes. Including those formed in position.

  According to the present invention, the charges of the photoelectric conversion elements adjacent in the column direction are transferred by different vertical transfer channels. Therefore, the charges of the high-sensitivity pixels for two rows or the charges of the low-sensitivity pixels for two rows are simultaneously transferred horizontally. Can be transferred to the department. Therefore, even if the readout of charges is divided into two, the processing time does not decrease, and the readout of only the charges of the high-sensitivity pixels can be performed in a shorter time. Further, since the charge transfer channel for one pixel can be arranged in the region for two pixels in the column direction, the width of the charge transfer channel can be narrowed and the density can be increased.

  As is apparent from the above description, according to the present invention, it is possible to provide a solid-state imaging device that can efficiently arrange and efficiently use the photoelectric conversion element and the color filter thereabove.

(First embodiment)
FIG. 1 shows a schematic configuration of the solid-state imaging device according to the first embodiment. The solid-state image sensor of FIG. 1 is a so-called honeycomb-structured solid-state image sensor, and has a high-sensitivity photoelectric conversion element and a low-sensitivity photoelectric conversion element.

  The solid-state imaging device in FIG. 1 converts light intensity into a charge signal by a plurality of low-sensitivity pixels 10 and a plurality of high-sensitivity pixels 20, and includes a plurality of vertical transfer units 30 (in FIG. 1, only part of them). The signal charge is transferred to the output unit 50 through the horizontal transfer unit 40, and the voltage signal 51 corresponding to the signal charge is output from the output unit 50.

  The low-sensitivity pixels 10 and the high-sensitivity pixels 20 (in FIG. 1, only a part thereof is denoted by a reference numeral) are respectively arranged in a square lattice pattern in the row direction X and the column direction Y orthogonal thereto. . The arrangement pitch of the low-sensitivity pixels 10 and the arrangement pitch of the high-sensitivity pixels 20 are the same, and the low-sensitivity pixels 10 and the high-sensitivity pixels 20 are shifted from each other in the row direction X and the column direction Y by ½ of the arrangement pitch. Arranged in position. In order to change the sensitivity of a photoelectric conversion element such as a photodiode constituting the low sensitivity pixel 10 and the high sensitivity pixel 20, the area of the light receiving surface of the photoelectric conversion element may be changed or provided above the photoelectric conversion element. You may change a condensing area with a micro lens. Since these methods are all well-known, description is abbreviate | omitted.

  Further, the solid-state imaging device of FIG. 1 has a color filter (not shown) above the low-sensitivity pixel 10 and the high-sensitivity pixel 20 in order to detect a color image signal. Although the arrangement method of the color filters is arbitrary, in order to obtain a wide dynamic range image, it is preferable that the arrangement of the low-sensitivity pixels 10 and the arrangement of the high-sensitivity pixels 20 be the same. In FIG. 1, the color filters are in a Bayer array, and corresponding photoelectric conversion elements detect charges corresponding to red light, green light, and blue light, respectively. Hereinafter, signals corresponding to red light, green light, and blue light detected by the high sensitivity pixel 20 are detected by the R signal, G signal, B signal (or simply R, G, B), and the low sensitivity pixel 10. Signals corresponding to red light, green light, and blue light may be described as r signal, g signal, and b signal (or simply r, g, b).

  The vertical transfer unit 30 transfers charges from the low-sensitivity pixel 10 and the high-sensitivity pixel 20 in the column direction Y, and includes a plurality of vertical transfer channels (not shown) and vertical transfer channels formed on the semiconductor substrate. A charge readout region for reading out the charges of the plurality of vertical transfer electrodes 101 to 104, the low-sensitivity pixel 10 and the high-sensitivity pixel 20 that are formed so as to intersect each of them in plan view (in FIG. 1, schematically Is indicated by an arrow).

  The vertical transfer channel has a meandering shape extending in the column direction Y as a whole between the low-sensitivity pixel 10 and the high-sensitivity pixel 20, and charges are transferred by the vertical transfer electrodes 101 to 104 formed thereabove. The areas to be stored and transferred are classified. Four vertical transfer electrodes 101 to 104 are provided corresponding to each of the low-sensitivity pixel 10 and the high-sensitivity pixel 20 (in the drawing, only those corresponding to the high-sensitivity pixels for one row are provided with reference numerals). ), A meandering shape extending in the row direction X as a whole between the low-sensitivity pixel 10 and the high-sensitivity pixel 20. In FIG. 1, the shape of the region sections where charges are stored and transferred is described as being connected, but in reality, the regions are formed of conductors having substantially the same width.

  Four-phase vertical transfer pulses are applied to the vertical transfer electrodes 101 to 104 via the terminals 111 to 114, and charges in the vertical transfer channel are transferred in the column direction Y. The vertical transfer pulse is also applied to the transfer electrodes 105 and 106 between the vertical transfer unit 30 and the horizontal transfer unit 40, and the low-sensitivity pixel 10 and the high-sensitivity pixel 20 for one row for each period of the vertical transfer pulse. The detected charge is sent to the horizontal transfer unit 40. Reading from the low-sensitivity pixel 10 and the high-sensitivity pixel 20 to the vertical transfer channel is performed by the first phase pulse (vertical transfer pulse applied to the terminal 111) and the third phase pulse (applied to the terminal 113) immediately after the start of the vertical charge transfer. The vertical transfer pulse) is superimposed on the readout pulse.

  Although not shown in FIG. 1, channel stops are formed between the vertical transfer channels. In FIG. 1, the vertical transfer electrodes 101 to 104 are shown larger than the low-sensitivity pixels 10 and the high-sensitivity pixels 20, but are actually smaller.

  The horizontal transfer unit 40 transfers charges from the vertical transfer unit 30 in the row direction X, and includes a horizontal transfer channel and a horizontal transfer electrode (both not shown). Two horizontal transfer pulses are applied to the horizontal transfer electrodes via the terminals 121 and 122, and one row of the low-sensitivity pixels 10 and one row of the high-sensitivity pixels 20 transferred from the vertical transfer unit 30. The signal charge is transferred to the output unit 50.

  Next, driving of the solid-state imaging device shown in FIG. 1 will be described. The charges accumulated in the low-sensitivity pixel 10 and the high-sensitivity pixel 20 according to the intensity of incident light from the object scene are transferred to the vertical transfer channel by the readout pulse superimposed on the first-phase and third-phase vertical transfer pulses. Is read out. Then, it is transferred in the vertical transfer channel according to the vertical transfer pulse, and held in a predetermined area of the horizontal transfer channel. Next, when a horizontal transfer pulse is applied, the held charges are sequentially sent to the output unit 50, and a voltage signal 51 corresponding to the charge amount is output.

  As described above, the conventional solid-state imaging device shown in FIG. 1 can generate an image signal with a wide dynamic range because the high-sensitivity pixel signal and the low-sensitivity pixel signal are alternately output from the horizontal transfer unit. For example, in the first-stage horizontal transfer in FIG. 1, the signals are output in the order of “GgRrGgRrGgRr... GgRr”.

  However, in order to obtain an image signal with a wide dynamic range, both the high-sensitivity pixel signal and the low-sensitivity pixel signal are required only when shooting a still image to be recorded and when shooting a moving image. In general, only a high-sensitivity pixel signal is sufficient for creating an image for camera viewfinder display. Therefore, it is necessary to perform useless processing such as separation of the low-sensitivity pixel signal and the high-sensitivity pixel signal that are alternately output, which increases the processing time. Further, unnecessary signal charges are transferred, and an increase in power consumption cannot be ignored.

  For this reason, the signal charge is read out in two steps, that is, the high-sensitivity pixel signal and the low-sensitivity pixel signal, and labor is saved when the low-sensitivity pixel signal is unnecessary.

(Second Embodiment)
In the solid-state imaging device according to the first embodiment, when only the high sensitivity signal is read by reading the high sensitivity pixel signal and the low sensitivity pixel signal twice, when the low sensitivity pixel signal is necessary. Since processing that can be read at one time is performed in two steps, the processing time increases. As in the solid-state imaging device described in Japanese Patent Application Laid-Open No. 2001-8104, a device that provides two transfer paths for a high-sensitivity pixel and a low-sensitivity pixel in the horizontal transfer unit has been proposed. In addition, an increase in power consumption is unavoidable. Even in such a case, the solid-state imaging device according to the second embodiment can simultaneously read out the high-sensitivity pixel signal and the low-sensitivity pixel signal.

  FIG. 2 shows a schematic configuration of the solid-state imaging device according to the second embodiment. The configurations of the plurality of low-sensitivity pixels 10, the plurality of high-sensitivity pixels 20, the horizontal transfer unit 40, and the output unit 50 in the solid-state image sensor of FIG. 2 are the same as those of the solid-state image sensor of FIG.

  The vertical transfer unit 31 (only a part is given a sign in FIG. 2) transfers charges from the low-sensitivity pixel 10 and the high-sensitivity pixel 20 in the column direction Y, and is formed on the semiconductor substrate. A plurality of vertical transfer channels (not shown), a plurality of vertical transfer electrodes 201 to 208 formed so as to intersect each of the vertical transfer channels in plan view, the low-sensitivity pixel 10 and the high-sensitivity pixel 20. It includes a charge readout region (shown schematically by arrows in FIG. 2) for reading out charges to the vertical transfer channel.

  The vertical transfer channel has a meandering shape extending in the column direction Y as a whole between the low-sensitivity pixel 10 and the high-sensitivity pixel 20, and charges are transferred by the vertical transfer electrodes 201 to 208 formed thereabove. The areas to be stored and transferred are classified. Eight vertical transfer electrodes 201 to 208 are provided corresponding to each of the two low-sensitivity pixels 10 and the high-sensitivity pixels 20 adjacent in the column direction Y (in the figure, only those corresponding to high-sensitivity pixels for two rows). In the same manner as the vertical transfer electrodes 101 to 104 in FIG. 1, a meandering shape extending in the row direction X as a whole between the low-sensitivity pixel 10 and the high-sensitivity pixel 20 is exhibited. . Further, actually, it is the same as the vertical transfer electrodes 101 to 104 in FIG. 1 in that it is formed of a conductor having substantially the same width.

  Eight-phase vertical transfer pulses are applied to the vertical transfer electrodes 201 to 208 via the terminals 211 to 218, and charges in the vertical transfer channel are transferred in the column direction Y. The vertical transfer pulse is also applied to the transfer electrodes 209 and 210 between the vertical transfer unit 30 and the horizontal transfer unit 40, and the low-sensitivity pixel 10 or the high-sensitivity pixel 20 for two rows is provided for each period of the vertical transfer pulse. The detected charge is sent to the horizontal transfer unit 40. Reading of charges to the vertical transfer channel is performed separately for reading from the low-sensitivity pixel 10 and reading from the high-sensitivity pixel 20. At the time of reading from the low-sensitivity pixel 10, a read pulse is used as the first phase pulse (vertical transfer pulse applied to the terminal 211) and the fifth phase pulse (vertical transfer pulse applied to the terminal 215) immediately after the start of vertical charge transfer. This is done by superimposing. At the time of reading from the high-sensitivity pixel 20, the third-phase pulse (vertical transfer pulse applied to the terminal 213) and the seventh-phase pulse (vertical transfer pulse applied to the terminal 217) immediately after the start of vertical charge transfer are used. This is done by superimposing the readout pulse.

  The charge readout region for reading out the charge of the low-sensitivity pixel 10 to the vertical transfer channel is formed between the two low-sensitivity pixels 10 adjacent in the column direction and different vertical transfer channels. That is, the readout when the first phase pulse applied to the terminal 211 is read out to the vertical transfer channel on the right side of the low-sensitivity pixel 10 in the drawing, and the readout when the fifth phase pulse applied to the terminal 215 is applied. Is read out to the vertical transfer channel on the left side of the low-sensitivity pixel 10 in the drawing.

  The same applies to the charge readout region in which the charge of the high-sensitivity pixel 20 is read out to the vertical transfer channel. Reading at the time of applying the seventh phase pulse read to the transfer channel and applied to the terminal 217 is read to the vertical transfer channel on the left side of the high-sensitivity pixel 20 in the drawing.

  Further, a channel stop is formed between the vertical transfer channels as in the solid-state imaging device of FIG. 1, but the peripheral portion of the pixel is different from that of FIG. That is, the peripheral portion of the pixel is provided on the side where the charge readout region is not provided.

  Next, driving of the solid-state imaging device shown in FIG. 2 will be described. The charges accumulated in the low-sensitivity pixel 10 and the high-sensitivity pixel 20 according to the intensity of incident light from the object scene are read out separately. First, when a readout pulse is superimposed on the third-phase and seventh-phase vertical transfer pulses, the charge of the high-sensitivity pixel 20 is read out to the vertical transfer channel. Then, it is transferred in the vertical transfer channel according to the vertical transfer pulse, and held in a predetermined area of the horizontal transfer channel. When the horizontal transfer pulse is applied, the held charges are sequentially sent to the output unit 50, and a voltage signal 51 corresponding to the charge amount is output.

  At this time, the charges of the high-sensitivity pixels 20 adjacent in the column direction are read out to different vertical transfer channels and simultaneously transferred to the horizontal transfer channel. For example, the charge of the high-sensitivity pixel 20 in the solid-state imaging device of FIG. In horizontal transfer, the data are output in the order of “GBRGGBBRGGBRG... GBRG”.

  When transferring the charge of the low-sensitivity pixel 10 after the transfer of the charge of the high-sensitivity pixel 20, the readout pulse is superimposed on the first-phase and fifth-phase vertical transfer pulses, and the charge of the low-sensitivity pixel 10 is Read to vertical transfer channel. Similarly, the read charge is transferred in the vertical transfer channel in accordance with the vertical transfer pulse and held in a predetermined region of the horizontal transfer channel. When the horizontal transfer pulse is applied, the held charges are sequentially sent to the output unit 50, and a voltage signal 51 corresponding to the charge amount is output. In this case, the output unit 50 outputs in the order of “gbrggbrg... Gbrg”.

  If the charge signal of the low-sensitivity pixel 10 is not required, it can be omitted, and the next image can be taken continuously, so that the shooting interval can be shortened during moving image shooting. In addition, since the vertical transfer electrodes are driven in eight phases, transfer charges can be stored in a section as large as four phases of the vertical transfer electrodes, and the width of the charge transfer channel can be reduced.

  The vertical transfer electrode of the solid-state imaging device of FIG. 2 has the same configuration as that of the conventional solid-state imaging device shown in FIG. 1, but can be further simplified. That is, the vertical transfer electrodes 211 and 212, 213 and 214, 215 and 216, 217 and 218 are combined into four electrodes and driven by four-phase vertical transfer pulses. With such a configuration, the smoothness of vertical transfer is somewhat lost, but the output signals are exactly the same.

(Third embodiment)
In the solid-state imaging device according to the first embodiment, it is necessary to secure a region for forming the vertical transfer unit according to an assumed charge transfer amount. Since the area for transferring the detected charge occupies the same area as the area for the high-sensitivity pixels, it is necessary to secure an area more than necessary. The solid-state image sensor according to the third embodiment does not need to secure an area for transferring the detected charges more than necessary, and enables the image sensor to have a high density.

  FIG. 3 shows a schematic configuration of the solid-state imaging device according to the third embodiment. The configurations of the plurality of low-sensitivity pixels 10, the plurality of high-sensitivity pixels 20, the horizontal transfer unit 40, and the output unit 50 in the solid-state image sensor of FIG. 3 are the same as those of the solid-state image sensor of FIG.

  The vertical transfer unit 32 (only a part is given a sign in FIG. 3) transfers charges from the low-sensitivity pixel 10 and the high-sensitivity pixel 20 in the column direction Y, and is formed on the semiconductor substrate. A plurality of vertical transfer channels (not shown), a plurality of vertical transfer electrodes 301 to 304 formed so as to cross each of the vertical transfer channels in plan view, the low-sensitivity pixel 10 and the high-sensitivity pixel 20. It includes a charge readout region (shown schematically by arrows in FIG. 3) for reading out charges to the vertical transfer channel.

  The vertical transfer channel has a shape in which two meandering shapes extending in the column direction Y are connected between the low-sensitivity pixel 10 and the high-sensitivity pixel 20 as a whole, and a vertical transfer electrode formed thereabove A region where charges are accumulated and transferred is divided by 301 to 304. Since the two meandering shapes are connected to each other, the vertical transfer channel has a shape surrounding the low-sensitivity pixel 10 in FIG. As shown in FIG. 3, when the area of the low-sensitivity pixel is formed to be small, the low-sensitivity pixel 10 is formed to surround the low-sensitivity pixel 10, but when the areas of the low-sensitivity pixel 10 and the high-sensitivity pixel 20 are the same, The pixels may be surrounded.

  Two vertical transfer electrodes 301 to 304 are provided corresponding to each of the low-sensitivity pixel 10 and the high-sensitivity pixel 20 (in the figure, only those corresponding to one row of high-sensitivity pixels are given a reference numeral). 1) As in the vertical transfer electrodes 101 to 104 in FIG. 1, a meandering shape extending in the row direction X as a whole between the low-sensitivity pixel 10 and the high-sensitivity pixel 20 is exhibited. Further, actually, it is the same as the vertical transfer electrodes 101 to 104 in FIG. 1 in that it is formed of a conductor having substantially the same width.

  Four-phase vertical transfer pulses are applied to the vertical transfer electrodes 301 to 304 via the terminals 311 to 314, and charges in the vertical transfer channel are transferred in the column direction Y. The vertical transfer pulse is also applied to the transfer electrodes 305 and 306 between the vertical transfer unit 32 and the horizontal transfer unit 40, and the low-sensitivity pixel 10 or the high-sensitivity pixel 20 for one row for each period of the vertical transfer pulse. The detected charge is sent to the horizontal transfer unit 40. Reading of charges to the vertical transfer channel is performed separately for reading from the low-sensitivity pixel 10 and reading from the high-sensitivity pixel 20. Reading from the low-sensitivity pixel 10 is performed by superimposing the reading pulse on the first phase pulse (vertical transfer pulse applied to the terminal 311) immediately after the start of vertical charge transfer. Further, when reading from the high-sensitivity pixel 20, the readout pulse is superimposed on the third phase pulse (vertical transfer pulse applied to the terminal 313) immediately after the start of the vertical charge transfer.

  One vertical transfer channel is shared by the charge of the low-sensitivity pixel 10 surrounded by the vertical transfer channel and the charge of the high-sensitivity pixel 10 adjacent to the vertical transfer channel. Further, a channel stop is formed between the vertical transfer channels as in the solid-state imaging device of FIG.

  Next, driving of the solid-state imaging device shown in FIG. 3 will be described. The charges accumulated in the low-sensitivity pixel 10 and the high-sensitivity pixel 20 according to the intensity of incident light from the object scene are read out separately. First, when the readout pulse is superimposed on the third-phase vertical transfer pulse, the charge of the high-sensitivity pixel 20 is read out to the vertical transfer channel. Then, it is transferred in the vertical transfer channel according to the vertical transfer pulse, and held in a predetermined area of the horizontal transfer channel. When the horizontal transfer pulse is applied, the held charges are sequentially sent to the output unit 50, and a voltage signal 51 corresponding to the charge amount is output.

  At this time, the charges of the high-sensitivity pixels 20 for one row are read out to the respective vertical transfer channels and simultaneously transferred to the horizontal transfer channel. For example, the first stage of the high-sensitivity pixels 20 in the solid-state imaging device in FIG. Are output in the order of “GRGRGR... GR” in the horizontal transfer, and in the order of “BGBBGBG... BG” in the next horizontal transfer.

  When transferring the charge of the low-sensitivity pixel 10 after the transfer of the charge of the high-sensitivity pixel 20, the readout pulse is superimposed on the first-phase vertical transfer pulse, and the charge of the low-sensitivity pixel 10 is transferred to the vertical transfer channel. read out. Similarly, the read charge is transferred in the vertical transfer channel in accordance with the vertical transfer pulse and held in a predetermined region of the horizontal transfer channel. When the horizontal transfer pulse is applied, the held charges are sequentially sent to the output unit 50, and a voltage signal 51 corresponding to the charge amount is output. In this case, “rgrgrg... Rg” is output in the order of the first horizontal transfer, and “gbgbgb... Gb” is output in the next horizontal transfer.

  When the charge signal of the low-sensitivity pixel 10 is not required, it can be omitted as in the case of FIG. 2, and the next image can be taken continuously, so that the shooting interval can be shortened during moving image shooting. . In addition, since the vertical transfer channel has a shape in which two meandering shapes are connected and has a wide width, the pitch in the row direction X between the low-sensitivity pixels 10 and the high-sensitivity pixels 20 can be reduced.

  In the above description, the color filters of the high-sensitivity pixels and the low-sensitivity pixels are RGB primary color Bayer arrays, but may be cyan, green, yellow, magenta checkered complementary filter arrays, or stripe filters. In addition, the color filter for each pixel may be eliminated, and the color imaging device having a three-plate configuration may be used.

  Furthermore, it is possible to obtain a high-resolution image by eliminating the color filter of the low-sensitivity pixel and using the signal of the low-sensitivity pixel for the interpolation process.

The figure which shows schematic structure of the solid-state image sensor of 1st Embodiment. The figure which shows schematic structure of the solid-state image sensor of 2nd Embodiment. The figure which shows schematic structure of the solid-state image sensor of 3rd Embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Low sensitivity pixel 20 ... High sensitivity pixel 30, 31, 32 ... Vertical transfer part 40 ... Horizontal transfer part 50 ... Output part 51 ... Voltage signal 101-104, 201- 208, 301 to 304 ... vertical transfer electrodes 105, 106, 209, 210, 305, 306 ... transfer electrodes 121, 122 ... horizontal transfer pulse terminals 111 to 114, 211 to 218, 311 to 314 ..Vertical transfer pulse terminals

Claims (3)

A solid-state imaging device including a plurality of photoelectric conversion elements arranged on a semiconductor substrate surface in a row direction and a column direction orthogonal thereto,
Having a color filter arranged above the photoelectric conversion element;
The photoelectric conversion elements include a first photoelectric conversion element arranged in a square lattice pattern in a row direction and a column direction orthogonal thereto, and a second photoelectric array arranged in a square lattice pattern in a row direction and a column direction orthogonal thereto. A photoelectric conversion element of
The first photoelectric conversion element and the second photoelectric conversion element are arranged at the same arrangement pitch and at positions shifted in the row direction and the column direction by a half of the arrangement pitch.
The color filter arrayed above the first photoelectric conversion element and the color filter arrayed above the second photoelectric conversion element are solid-state imaging elements each having a Bayer array. The solid-state imaging device according to claim 1,
The first photoelectric conversion element is a plurality of high-sensitivity photoelectric conversion elements that perform relatively high-sensitivity photoelectric conversion,
The second photoelectric conversion element is a solid-state imaging element that is a plurality of low-sensitivity photoelectric conversion elements that perform relatively low-sensitivity photoelectric conversion. The solid-state imaging device according to claim 1 or 2,
A vertical transfer unit for transferring charges from the photoelectric conversion elements in the column direction;
A horizontal transfer unit that transfers charges from the vertical transfer unit in the row direction;
An output unit that outputs a signal corresponding to the charge transferred by the horizontal transfer unit,
The vertical transfer unit intersects each of the plurality of vertical transfer channels formed in the semiconductor substrate corresponding to the plurality of photoelectric conversion elements arranged in the column direction and the vertical transfer channels in plan view. A plurality of vertical transfer electrodes formed as described above, and a charge readout region for reading out the charge of the photoelectric conversion element to the vertical transfer channel,
The vertical transfer channel has a meandering shape extending in the column direction between the photoelectric conversion elements as a whole,
The vertical transfer electrode has a meandering shape extending in the row direction between the photoelectric conversion elements as a whole,
The solid-state imaging device in which the charge readout region of the first photoelectric conversion element and the charge readout region of the second photoelectric conversion element are formed at positions corresponding to the different vertical transfer electrodes.

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