JP2008016369A - Quantum dot sensitized solar cell - Google Patents
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Abstract
【課題】耐光性に優れ、著しく高い電流変換効率を有する半導体量子ドット増感太陽電池を提供する。
【解決手段】透明電極側に形成された酸化チタンなどの金属酸化物n型半導体膜と、このn型半導体膜に担持されたCdS、PbSなどの直径6nm以下の半導体量子ドットと、多硫化物水溶液などの無機系液体電解質と、対極とを備えていることを特徴とする。
【選択図】図1A semiconductor quantum dot-sensitized solar cell having excellent light resistance and extremely high current conversion efficiency is provided.
A metal oxide n-type semiconductor film such as titanium oxide formed on a transparent electrode side, a semiconductor quantum dot having a diameter of 6 nm or less, such as CdS or PbS, carried on the n-type semiconductor film, and a polysulfide An inorganic liquid electrolyte such as an aqueous solution and a counter electrode are provided.
[Selection] Figure 1
Description
この発明は、量子ドットによって増感された太陽電池に関する。 The present invention relates to a solar cell sensitized by quantum dots.
色素増感太陽電池は、シリコン太陽電池よりも低コストで製造できることから、次世代電池として注目されている。
一方、半導体量子ドットは、優れた光吸収特性を有し、3電極式セルで色素増感剤に勝る高い増感作用を発揮することが知られている(非特許文献1)。また、透明電極側半導体膜に量子ドットを担持させ、固体電解質を用いた電池も提案されている(特許文献1)。
On the other hand, it is known that semiconductor quantum dots have excellent light absorption properties and exhibit a high sensitizing action over dye sensitizers in a three-electrode cell (Non-Patent Document 1). A battery using a solid electrolyte in which quantum dots are supported on a transparent electrode side semiconductor film has also been proposed (Patent Document 1).
しかし、電解質として液体を用いた場合、光を吸収して酸化された量子ドットが、そのままの状態では水などの溶媒と反応して分解するため、太陽電池として実用化することができない。また、特許文献1では固体電解質が用いられているが、そこに開示された実施形態でさえ入射光子の電流変換率(IPCE)が最高で25%と低く、しかも電解質が有機物であるから耐光性に乏しい。
それ故、この発明の課題は、耐光性に優れ、著しく高い電流変換率を有する太陽電池を提供することにある。
However, when a liquid is used as an electrolyte, quantum dots that are oxidized by absorbing light react with a solvent such as water and decompose in that state, and thus cannot be put into practical use as a solar cell. In
Therefore, an object of the present invention is to provide a solar cell that is excellent in light resistance and has a remarkably high current conversion rate.
その課題を解決するために、この発明の量子ドット増感太陽電池は、
透明電極側に形成された金属酸化物n型半導体膜と、このn型半導体膜に担持された半導体量子ドットと、無機系液体電解質と、対極とを備えていることを特徴とする。
この発明の太陽電池は、半導体膜に半導体量子ドットが担持され、しかも電解質が液体であるので、量子ドットを担持した半導体膜の隅々まで電解質が浸透する。その結果、高い電流変換効率を有する。そして、電解質が無機系であることから、光照射下でも劣化しにくい。
量子ドットと電解質の好ましい組み合わせは、前記量子ドットとなる半導体をPbS、CdSなどの化合物半導体とし、前記無機系液体電解質をNa2SX/Na2Sなどの多硫化物の水溶液とするものである。この組み合わせによれば、化合物半導体が電解液中の水と反応して分解する速度よりもはるかに速く多硫化物が化合物半導体成分を還元し、量子ドットを安定に存在させることができるからである。多硫化物に代えて前記無機系液体電解質として、ヨウ素イオン、及びヨウ素イオンの酸化還元電位と前記量子ドットの価電子帯上端との間に酸化還元電位を有するマイナスイオンを含むものを用いても同様に量子ドットを安定に存在させることができる。ヨウ素イオンを単独で用いると通常は化合物半導体の分解速度が還元速度に勝るが、前記マイナスイオンを共存させるとヨウ素イオンから化合物半導体成分への電子の橋渡しをするからである。
In order to solve the problem, the quantum dot-sensitized solar cell of the present invention is
A metal oxide n-type semiconductor film formed on the transparent electrode side, a semiconductor quantum dot supported on the n-type semiconductor film, an inorganic liquid electrolyte, and a counter electrode are provided.
In the solar cell of the present invention, the semiconductor quantum dots are supported on the semiconductor film and the electrolyte is liquid, so that the electrolyte penetrates to every corner of the semiconductor film supporting the quantum dots. As a result, it has high current conversion efficiency. And since electrolyte is inorganic type, it does not deteriorate easily under light irradiation.
A preferable combination of quantum dots and an electrolyte is such that the semiconductor to be the quantum dots is a compound semiconductor such as PbS or CdS, and the inorganic liquid electrolyte is an aqueous solution of a polysulfide such as Na 2 S X / Na 2 S. is there. According to this combination, the polysulfide can reduce the compound semiconductor component much faster than the rate at which the compound semiconductor reacts with the water in the electrolyte and decomposes, so that the quantum dots can exist stably. . Instead of polysulfide, the inorganic liquid electrolyte may include iodine ions and those containing negative ions having a redox potential between the redox potential of iodine ions and the valence band upper end of the quantum dots. Similarly, quantum dots can exist stably. This is because when iodine ions are used alone, the decomposition rate of the compound semiconductor is usually higher than the reduction rate, but when the negative ions coexist, the electrons from the iodine ions to the compound semiconductor components are bridged.
以上のように、耐光性に優れ、著しく高い変換効率を有する他、次の効果を有する。増感剤が半導体量子ドットであるから、粒径を制御することによりバンドギャップを変化させることができ、また、バンドギャップ以上のエネルギーをもつすべての光に対して高い吸収係数を有することから、色素よりも吸収領域の設定が容易である。つまり、より高効率の太陽電池を設計することが可能である。さらに、n型半導体上への半導体量子ドットの合成が非常に簡便であり、原料が安価であることから、太陽電池の製造コストが低い。 As described above, it has excellent light resistance, extremely high conversion efficiency, and also has the following effects. Since the sensitizer is a semiconductor quantum dot, the band gap can be changed by controlling the particle size, and since it has a high absorption coefficient for all light having energy higher than the band gap, It is easier to set the absorption region than the dye. That is, it is possible to design a more efficient solar cell. Furthermore, since the synthesis of semiconductor quantum dots on an n-type semiconductor is very simple and the raw materials are inexpensive, the manufacturing cost of solar cells is low.
n型半導体膜となる金属酸化物としては、伝導帯の下端が酸化チタンの伝導帯の下端よりも負側にあり、価電子帯の上端が電解質の酸化還元電位よりも正側にあるものであればよく、例えばTiO2、Ta2O5、Nb2O5、SnO2、ZnO、ZrO2などが挙げられる。好ましいのはTiO2である。量子ドットとなる半導体としては、前記のPbS、CdSが好ましく挙げられる他、CdTe、CdSe、Sb2S3、Bi2S3、Ag2S、Ag2Se、Ag2Te、Au2S、Au2Se、Au2Te、Cu2S、Cu2Se、Cu2Te、Fe2S、Fe2Se、Fe2Te、PbSe、PbTe、In2S3、SnS、CuInS2、CuInSe2、CuInTe2などの化合物半導体であってもよい。前記量子ドットは、通常直径10nm以下、好ましくは6nm以下の粒子であるが、特に限定されず量子サイズ効果を生じるものであればよい。
As a metal oxide that becomes an n-type semiconductor film, the lower end of the conduction band is on the negative side of the lower end of the conduction band of titanium oxide, and the upper end of the valence band is on the positive side of the redox potential of the electrolyte. sufficient if, for example TiO 2, Ta 2 O 5, Nb 2 O 5,
−実施例1−
フッ素ドープSnO2からなる透明導電膜が形成されたガラス基板(旭ガラス株式会社製 A110U80(U膜))を洗浄し、透明導電膜上にTiO2ペースト(平均粒径15nm、BET表面積165m2/g、アナターゼ型)を150メッシュのスクリーンで6〜7nmの厚さに印刷した。500℃で焼成した後、TiCl4水溶液(濃度50mM)を塗布した。次に、Cd(ClO4)2水溶液(濃度0.1M)に前記酸化チタン膜付き基板を1分間浸した後、Na2S水溶液(濃度0.1M)に1分間浸す操作を所定回数繰り返すことによって、半導体量子ドット増感酸化チタン電極(以下、「酸化チタン電極」)を作成した。当初無色であったTiO2ペースト焼き付け部分が黄色に変わり、浸漬操作を繰り返すたびにその色が濃くなった。X線回折法により着色部分を分析したところ、いずれの酸化チタン電極にもCdSが担持されていることが認められ、しかも浸漬回数が多いものほどCdSのピークが高くなっていた。つまり、浸漬前の焼き付け部分をSEMで観察したところ、10nm以上の粒子(酸化チタンに由来)しか見られなかったが、5回浸漬したものはそのような比較的大きな粒子の上に2−5nmの粒子が付着していた。
Example 1
A glass substrate (A110U80 (U film) manufactured by Asahi Glass Co., Ltd.) on which a transparent conductive film made of fluorine-doped SnO 2 was formed was washed, and a TiO 2 paste (
電解液としてのNa2SX/Na2S水溶液(濃度0.05M/0.1M)、枠状のPET製スペーサ及び白金薄膜を蒸着した対極を準備した。そして、酸化チタン電極のTiO2印刷面にスペーサを置き、電解液を酸化チタン電極に浸透させ、その上に対極を重ね合わせることにより、太陽電池を製造した。この太陽電池について分光計器社製のXeランプ面内均一光照射装置を用いて吸収スペクトルを測定した結果を図1に示す。図中の数字は、浸漬回数である。また、そのうち前記浸漬操作を5回繰り返したものの電流電圧特性及びIPCEを測定した結果をそれぞれ図2及び図3に示す。 A counter electrode on which a Na 2 S X / Na 2 S aqueous solution (concentration 0.05 M / 0.1 M), a frame-like PET spacer, and a platinum thin film as an electrolyte was deposited was prepared. Then, a solar cell was manufactured by placing a spacer on the TiO 2 printed surface of the titanium oxide electrode, allowing the electrolytic solution to permeate the titanium oxide electrode, and superimposing a counter electrode thereon. FIG. 1 shows the result of measuring the absorption spectrum of this solar cell using an Xe lamp in-plane uniform light irradiation device manufactured by Spectrometer Co., Ltd. The numbers in the figure are the number of immersions. Moreover, the result of having measured the current voltage characteristic and IPCE of what repeated the said immersion operation 5 times is shown in FIG.2 and FIG.3, respectively.
図1に見られるように、浸漬回数の増加に伴って吸収端が長波長側に移動した。従って、浸漬回数の増加に伴ってCdS量子ドットのサイズが大きくなり、バンドギャップが小さくなることがわかった。また、図2に見られるように優れた動作特性を示し、図3に見られるようにIPCEが最高で52%に達した。 As seen in FIG. 1, the absorption edge moved to the long wavelength side as the number of immersions increased. Therefore, it was found that the size of the CdS quantum dots increases with an increase in the number of immersions, and the band gap decreases. Further, as shown in FIG. 2, it showed excellent operating characteristics, and as shown in FIG. 3, the IPCE reached 52% at the maximum.
−実施例2−
電解液の組成をNaSCN(0.7M)+LiI(0.7M)+I2(0.05M)に代え、浸漬回数を5として直径2−5nmのCdS粒子を得た以外は実施例1と同一条件で太陽電池を製造した。比較のために、電解液の組成をLiI(0.7M)+I2(0.05M)としたものについても同様に製造した。これらの太陽電池のIPCEを測定した結果を図4に示す。図4に見られるように、ヨウ素電解質のみではTiO2の光吸収(〜400nm)による光電変換しか示さなかったが、NaSCNとの共存によりCdSの光吸収(〜570nm)による光電変換を示した。従って、ヨウ素電解質単独では光照射とともにCdSが光溶解するのに対して、NaSCNが共存するとSCN-の酸化電位がI-よりも正側にあることから、CdSとSCN-間並びにSCN-とI-間での電子移動反応が効率よく進行していると推測される。
-Example 2-
The same conditions as in Example 1 except that the composition of the electrolyte was changed to NaSCN (0.7 M) + LiI (0.7 M) + I 2 (0.05 M), and the number of immersions was set to 5 to obtain CdS particles having a diameter of 2 to 5 nm. A solar cell was manufactured. For comparison, an electrolyte solution having a composition of LiI (0.7 M) + I 2 (0.05 M) was also produced in the same manner. The results of measuring the IPCE of these solar cells are shown in FIG. As seen in FIG. 4, the iodine electrolyte alone showed only photoelectric conversion by TiO 2 light absorption (˜400 nm), but coexistence with NaSCN showed photoelectric conversion by CdS light absorption (˜570 nm). Thus, while the CdS is photodissolution with light irradiation iodine electrolyte alone and NaSCN coexist SCN - since it is on the positive side than, CdS and SCN - - oxidation potential of I and between SCN - and I - electron transfer reaction between is estimated to proceed efficiently.
−実施例3−
図5は、実施例1における電解液としてのNa2SX/Na2S水溶液の組成を最適化してIPCEを測定した結果を示す。IPCEは最高で68%に達した。
Example 3
FIG. 5 shows the result of measuring the IPCE by optimizing the composition of the Na 2 S X / Na 2 S aqueous solution as the electrolytic solution in Example 1. IPCE reached a maximum of 68%.
−実施例4−
実施例1におけるCd(ClO4)2水溶液に代えてPb(ClO4)2水溶液(0.1M)を用いて浸漬操作を3回繰り返して直径2−4nmのPbS粒子を得た以外は、実施例1と同一条件で太陽電池を製造し、吸収スペクトルを測定した結果を図6に示す。実施例1と同じく浸漬回数の増加に伴って吸収端が長波長側に移動し、浸漬操作を10回繰り返したものの吸収端は3030nmに達した。従って、かなり広い波長範囲の光を電流に変換できることがわかった。
Example 4
Except that Pb (ClO 4 ) 2 aqueous solution (0.1 M) was used instead of the Cd (ClO 4 ) 2 aqueous solution in Example 1, the dipping operation was repeated three times to obtain PbS particles having a diameter of 2 to 4 nm. FIG. 6 shows the result of manufacturing a solar cell under the same conditions as in Example 1 and measuring the absorption spectrum. As in Example 1, the absorption edge moved to the long wavelength side as the number of immersions increased, and the absorption edge reached 3030 nm after the immersion operation was repeated 10 times. Therefore, it was found that light in a considerably wide wavelength range can be converted into current.
また、電解液組成を最適化してIPCEを測定したところ、図7に示すように最高で42%に達した。図中、逆三角の値は図6の結果を転記したものである。比較のために、浸漬操作の繰り返しに代えて公知のルテニウム錯体からなる色素増感剤N719のアルコール溶液に24時間浸した以外は実施例1と同一条件で太陽電池を製造し、IPCEを測定した結果を図7に併記する。この図からPbS量子ドットを担持させた電池は、エネルギー変換効率10%が確認されているN719増感太陽電池に匹敵するエネルギー変換効率を有する可能性があることが認められる。 Further, when the IPCE was measured by optimizing the electrolyte composition, the maximum reached 42% as shown in FIG. In the figure, the value of the inverted triangle is a transcription of the result of FIG. For comparison, a solar cell was produced under the same conditions as in Example 1 except that it was immersed in an alcohol solution of a dye sensitizer N719 composed of a known ruthenium complex instead of repeating the dipping operation, and the IPCE was measured. The results are also shown in FIG. From this figure, it is recognized that a battery carrying PbS quantum dots may have an energy conversion efficiency comparable to that of an N719-sensitized solar cell in which an energy conversion efficiency of 10% is confirmed.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011001815A1 (en) | 2009-06-29 | 2011-01-06 | シャープ株式会社 | Wet type solar battery module |
| CN102148098A (en) * | 2010-12-28 | 2011-08-10 | 华东师范大学 | Method for preparing quantum dot sensitized oxide film with broad spectral response |
| CN102629520A (en) * | 2012-05-03 | 2012-08-08 | 天津师范大学 | Double-particle-size quantum dot co-sensitization solar battery as well as preparation method and application of double-particle-size quantum dot co-sensitization solar battery |
| WO2012157789A3 (en) * | 2011-05-19 | 2013-01-03 | 北村 美智子 | Manufacturing method for photoelectric converter for solar cell, photoelectric converter for solar cell, and solar cell using photoelectric converter |
| JP2013089368A (en) * | 2011-10-14 | 2013-05-13 | Ulvac Japan Ltd | Quantum dot sensitization type solar cell |
| JP2013171661A (en) * | 2012-02-20 | 2013-09-02 | Ulvac Japan Ltd | Method of manufacturing quantum dot sensitization type solar battery |
| WO2014087649A1 (en) * | 2012-12-04 | 2014-06-12 | Sharp Kabushiki Kaisha | Quantum dot sensitized solar cell |
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| JP2002141116A (en) * | 2000-11-02 | 2002-05-17 | National Institute Of Advanced Industrial & Technology | Semiconductor composite thin film electrode and solar cell using the same |
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| JP2002141116A (en) * | 2000-11-02 | 2002-05-17 | National Institute Of Advanced Industrial & Technology | Semiconductor composite thin film electrode and solar cell using the same |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011001815A1 (en) | 2009-06-29 | 2011-01-06 | シャープ株式会社 | Wet type solar battery module |
| CN102148098A (en) * | 2010-12-28 | 2011-08-10 | 华东师范大学 | Method for preparing quantum dot sensitized oxide film with broad spectral response |
| WO2012157789A3 (en) * | 2011-05-19 | 2013-01-03 | 北村 美智子 | Manufacturing method for photoelectric converter for solar cell, photoelectric converter for solar cell, and solar cell using photoelectric converter |
| JP2013089368A (en) * | 2011-10-14 | 2013-05-13 | Ulvac Japan Ltd | Quantum dot sensitization type solar cell |
| JP2013171661A (en) * | 2012-02-20 | 2013-09-02 | Ulvac Japan Ltd | Method of manufacturing quantum dot sensitization type solar battery |
| CN102629520A (en) * | 2012-05-03 | 2012-08-08 | 天津师范大学 | Double-particle-size quantum dot co-sensitization solar battery as well as preparation method and application of double-particle-size quantum dot co-sensitization solar battery |
| WO2014087649A1 (en) * | 2012-12-04 | 2014-06-12 | Sharp Kabushiki Kaisha | Quantum dot sensitized solar cell |
| JP2016503574A (en) * | 2012-12-04 | 2016-02-04 | シャープ株式会社 | Quantum dot sensitized solar cell |
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