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JP2008001569A - 単結晶ＳｉＣ及びその製造方法並びに単結晶ＳｉＣの製造装置 - Google Patents

単結晶ＳｉＣ及びその製造方法並びに単結晶ＳｉＣの製造装置 Download PDF

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Publication number
JP2008001569A
JP2008001569A JP2006173699A JP2006173699A JP2008001569A JP 2008001569 A JP2008001569 A JP 2008001569A JP 2006173699 A JP2006173699 A JP 2006173699A JP 2006173699 A JP2006173699 A JP 2006173699A JP 2008001569 A JP2008001569 A JP 2008001569A
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JP
Japan
Prior art keywords
single crystal
sic
crystal sic
susceptor
temperature gradient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006173699A
Other languages
English (en)
Japanese (ja)
Inventor
Masanori Ikari
真憲 碇
Toru Kaneniwa
徹 金庭
Takao Abe
孝夫 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP2006173699A priority Critical patent/JP2008001569A/ja
Priority to TW096113301A priority patent/TW200806828A/zh
Priority to PCT/JP2007/059911 priority patent/WO2007148486A1/ja
Priority to KR1020087023688A priority patent/KR20090021144A/ko
Publication of JP2008001569A publication Critical patent/JP2008001569A/ja
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/063—Heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2006173699A 2006-06-23 2006-06-23 単結晶ＳｉＣ及びその製造方法並びに単結晶ＳｉＣの製造装置 Pending JP2008001569A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006173699A JP2008001569A (ja) 2006-06-23 2006-06-23 単結晶ＳｉＣ及びその製造方法並びに単結晶ＳｉＣの製造装置
TW096113301A TW200806828A (en) 2006-06-23 2007-04-16 Single crystal SiC, production method thereof and producing device of single crystal SiC
PCT/JP2007/059911 WO2007148486A1 (ja) 2006-06-23 2007-05-15 単結晶ＳｉＣ及びその製造方法並びに単結晶ＳｉＣの製造装置
KR1020087023688A KR20090021144A (ko) 2006-06-23 2007-05-15 단결정 ＳｉＣ 및 그 제조 방법과 단결정 ＳｉＣ의 제조 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006173699A JP2008001569A (ja) 2006-06-23 2006-06-23 単結晶ＳｉＣ及びその製造方法並びに単結晶ＳｉＣの製造装置

Publications (1)

Publication Number Publication Date
JP2008001569A true JP2008001569A (ja) 2008-01-10

Family

ID=38833229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006173699A Pending JP2008001569A (ja) 2006-06-23 2006-06-23 単結晶ＳｉＣ及びその製造方法並びに単結晶ＳｉＣの製造装置

Country Status (4)

Country Link
JP (1) JP2008001569A (zh)
KR (1) KR20090021144A (zh)
TW (1) TW200806828A (zh)
WO (1) WO2007148486A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101812723B (zh) * 2010-04-20 2012-04-11 上海硅酸盐研究所中试基地 基于物理气相传输技术生长碳化硅体单晶方法及其装置
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000264791A (ja) * 1999-03-17 2000-09-26 Nippon Pillar Packing Co Ltd 単結晶ＳｉＣの育成方法
JP2002179498A (ja) * 2000-12-12 2002-06-26 Denso Corp 炭化珪素単結晶の製造方法
JP3505597B2 (ja) * 2000-02-23 2004-03-08 日本ピラー工業株式会社 炭化珪素単結晶

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000264791A (ja) * 1999-03-17 2000-09-26 Nippon Pillar Packing Co Ltd 単結晶ＳｉＣの育成方法
JP3505597B2 (ja) * 2000-02-23 2004-03-08 日本ピラー工業株式会社 炭化珪素単結晶
JP2002179498A (ja) * 2000-12-12 2002-06-26 Denso Corp 炭化珪素単結晶の製造方法

Also Published As

Publication number Publication date
WO2007148486A1 (ja) 2007-12-27
KR20090021144A (ko) 2009-02-27
TW200806828A (en) 2008-02-01

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