JP2008091396A - Semiconductor module and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor module in which elements built in a stack structure can be easily connected to each other using a metal fine wire, and to provide a semiconductor device. <P>SOLUTION: The semiconductor module 10 has a wiring board 16 having at least one wiring layer, and a semiconductor element 12A disposed on the upper surface of the wiring board 16. On the upper surface of the wiring board 16, a plurality of pads are provided along sides and the semiconductor element 12A etc. are disposed on the upper surface of the wiring board 16 on a region surrounded by the pads. Further, a wiring for electrically connecting the pads through the lower part of the semiconductor elements is provided on the wiring board. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor module and a semiconductor device, and more particularly to a semiconductor module and a semiconductor device in which a semiconductor element is disposed on an upper surface of a wiring board.

  Since a circuit device set in an electronic device is employed in a mobile phone, a portable computer, and the like, there is a demand for downsizing, thinning, and weight reduction. In order to satisfy these conditions, a circuit device called CSP (Chip Scale Package) having a size equivalent to that of a built-in semiconductor element has been developed.

  FIG. 7 is a cross-sectional view of a semiconductor module 100 having a plurality of circuit devices 101A and the like which are the above-described CSPs. Here, three circuit devices 101A, 101B, and 101C are mounted on the upper surface of the substrate 103, and each circuit device 101A and the like are electrically connected to each other by a conductive path 102 formed on the upper surface of the substrate 103. . Thus, an electric circuit including a plurality of semiconductor elements and having a predetermined function has been constructed. As this electric circuit, for example, there is an electric circuit that is built in a portable device such as a cellular phone and has a function for taking an image with a camera.

  However, in the semiconductor module 100 having the above-described configuration, each semiconductor element is mounted as a separate package on the upper surface of the substrate 103. Therefore, in order to realize a predetermined function, a plurality of resin-encapsulated molds are formed on the upper surface of the substrate 103. It is necessary to mount the semiconductor device 101A and the like. This increases the area required for mounting the circuit device 101A and the like, increases the size of the substrate 103 itself, and hinders the downsizing of a set such as a mobile phone in which the substrate 103 is built. It was.

As one method for solving the above-described problem, there is a technique in which a plurality of semiconductor elements are stacked in the thickness direction and incorporated in one semiconductor device (Patent Document 1). Such a semiconductor device is also called a stack type package. According to this technique, since a plurality of semiconductor elements are stacked inside the semiconductor device, an increase in the size of the semiconductor device can be suppressed even when a large number of elements are incorporated.
JP 2005-277356 A

  However, in the case of the above-described stack type package, there is a problem that electrical connection between semiconductor elements using thin metal wires is not easy. Specifically, first, electrodes provided on the surface of a general semiconductor element are not arranged on the assumption that they are used in a stack structure. Therefore, since the electrodes of the semiconductor elements stacked on each other are not arranged in alignment, when trying to connect the semiconductor elements using metal fine wires, the arrangement of the metal fine wires becomes complicated and the metal fine wires are in contact with each other. Short circuit may occur. In order to prevent this short circuit, if either one of the metal wires is formed high at the crossing point of the metal wires, the thickness of the sealing resin that covers the metal wires increases and the overall thickness of the device is reduced. There was a problem that would be difficult.

  Furthermore, when a placement simulation is performed using software, various combinations of placements can be virtually tried without actually mounting. However, even if such an arrangement simulation is performed, the arrangement of the electrodes of the semiconductor element is random, and the above-described problem that the metal thin wire is short-circuited cannot be avoided.

  Furthermore, if the design is changed by optimizing the position of the electrode of the semiconductor element in order to avoid the above-described problem, the manufacturing cost may increase with this change. In particular, in recent years, the life cycle of sets of mobile phones and the like tends to be shortened, and if the design change described above is performed each time the set is updated, there is a problem that the price of the set of mobile phones and the like increases. To do.

  The present invention has been made in view of such problems, and a main object of the present invention is to provide a semiconductor module and a semiconductor device in which elements built in a stack structure can be easily connected using a thin metal wire Is to provide.

  The semiconductor module of the present invention includes a wiring board having at least one wiring layer and a semiconductor element disposed on the upper surface of the wiring board, and the upper surface of the wiring board includes a plurality of pieces along a side. A pad is provided, and the semiconductor element is disposed on the upper surface of the wiring board in a region surrounded by the pad, and the pads are electrically connected to each other through a region below the semiconductor element. The wiring which performs is provided.

  Furthermore, the semiconductor device of the present invention is a semiconductor device in which a plurality of semiconductor elements are built in a stack structure, and includes a wiring board having at least one wiring layer and a semiconductor element disposed on the upper surface of the wiring board. A plurality of pads are provided along side edges on the upper surface of the wiring substrate, and the semiconductor element is disposed on the upper surface of the wiring substrate in a region surrounded by the pads. Wiring for electrically connecting the pads to each other through a region below the semiconductor element is provided.

  According to the semiconductor module of the present invention, by using the wiring formed on the surface of the wiring board, the pads electrically connected to the electrodes of the semiconductor elements mounted on the wiring board can be placed at any location on the wiring board. Can be arranged. Therefore, the semiconductor elements arranged on the wiring board and the lower-layer semiconductor elements arranged in a stack structure can be electrically connected via this pad. From this, even if the electrodes of the semiconductor elements arranged on the wiring board are randomly arranged, by applying the semiconductor module of the present invention, the fine metal wires are applied to the pads arranged along the side edges of the wiring board. By wire bonding, the configuration of the metal fine wire can be simplified and the length thereof can be shortened. Furthermore, by arranging the arrangement of the fine metal wires, it is possible to avoid the problem that the fine metal wires come into contact with each other to cause a short circuit.

  Furthermore, according to the semiconductor device to which the semiconductor module of the present invention is applied, even if the semiconductor elements to be stacked are changed, it is possible to cope only by changing the pads and wiring patterns formed on the surface of the wiring board. In other words, in the past, in order to connect the electrodes of the semiconductor elements of the stack structure by changing the built-in semiconductor elements and using the fine metal wires, the redesign for making the positions of the electrodes of the semiconductor elements appropriate Was sometimes needed. In this case, the manufacturing cost of the semiconductor element increases with the redesign. In the present invention, even if the built-in semiconductor element is changed, it is stacked in a stack type only by configuring the module by changing the wiring shape of the wiring board according to the position of the electrode of the new semiconductor element. Semiconductor elements can be electrically connected to each other. Therefore, a commercially available semiconductor element that is not manufactured on the premise of the stack structure can be easily taken into the semiconductor device having the stack structure, and a low cost can be realized.

  With reference to the plan view of FIG. 1, the configuration of the semiconductor module 10 of the present embodiment will be described. The semiconductor module 10 includes a wiring board 16 having at least one wiring layer, and semiconductor elements 12A and the like disposed on the upper surface of the wiring board 16. A plurality of the semiconductor modules 10 are provided on the upper surface of the wiring board 16 along the sides. The semiconductor element 12A and the like are arranged on the upper surface of the wiring board 16 in a region surrounded by the pad. Furthermore, the wiring board 16 is provided with wiring that passes under the semiconductor element 12A and the like to electrically connect the pads.

  The wiring substrate 16 is obtained by forming a wiring layer including pads on the surface of a resin sheet having a thickness of, for example, about 30 μm. Here, the wiring board 16 may be configured by two or more multilayer wirings laminated via an insulating layer made of resin. Furthermore, since the wiring board 16 is used for routing the electrodes of the semiconductor elements fixed to the upper surface, the back surface is a smooth surface made of resin and no wiring is provided. In addition, a pad is provided in the peripheral portion of the wiring substrate 16, and the semiconductor element 12A and the like are disposed in a region surrounded by the pad.

  In the periphery of the wiring board 16, pads (first pad 30 </ b> A and second pad 22 </ b> A) in which a wiring layer is formed in a pad shape are arranged in parallel along the side of the wiring board 16. The planar size of each pad is such that a fine metal wire can be wire-bonded, and is, for example, about vertical × horizontal = 200 μm × 200 μm. Further, these pads are connected to each other via a wiring formed of a part of the wiring layer. With such a configuration, the pads connected to the electrodes formed on the upper surface of the semiconductor element 12 </ b> A and the like can be arranged at arbitrary positions in the peripheral portion of the upper surface of the wiring substrate 16. Therefore, when the semiconductor module 10 is placed on the upper surface of another lower layer semiconductor element, no matter what position the electrodes of the semiconductor element 12A mounted on the wiring board 16 are arranged, A pad connected to an electrode such as the semiconductor element 12A can be arranged at a desired position via the wiring. Therefore, the above-described problems can be eliminated, and the semiconductor element 12A and the like mounted on the wiring board 16 and the lower layer semiconductor element can be electrically connected via the fine metal wire.

  The wiring board 16 has a rectangular shape in plan, and has four side edges (first side edge 16A, second side edge 16B, third side edge 16C, and fourth side edge 16D). The first side 16A and the second side 16B are opposite sides in the longitudinal direction of the wiring board 16, and the third side 16C and the fourth side 16D are opposite sides of the wiring board 16 in the short direction. It is an edge.

  The semiconductor elements 12A and 12B are placed on the upper surface of the wiring substrate 16 in a region surrounded by the pads. Here, two semiconductor elements 12A and the like are arranged, but the number of semiconductor elements arranged on the upper surface of the wiring board 16 may be one, or may be three or more. Further, in the drawing, the semiconductor element 12A and the like are arranged face up, and the lower surface of the semiconductor element 12A and the like is arranged on the upper surface of the wiring board 16 using an insulating or conductive adhesive, and is arranged on the upper surface of the semiconductor element 12A and the like. The formed electrode is connected to the pad of the wiring board 16 using a fine metal wire. Here, the semiconductor elements 12A and the like may be arranged on the wiring board 16 face down.

  The shape of the wiring layer formed on the upper surface of the wiring board 16 will be specifically described below.

  First, a first pad 30A and a second pad 22A are formed, and both pads are connected by a wiring 21A. The first pad 30A and the second pad 22A are bonding pads to which a thin metal wire is connected. For example, the first pad 30A and the second pad 22A have a square shape of 200 μm square and are covered with a gold plating film or the like. The wiring 21A has a width of about 50 μm, for example, and is linearly provided on the upper surface of the wiring board 16 to connect both pads. The wiring 21A extends below the semiconductor element 12A. With the configuration of the wiring 21A, the electrode 23A of the semiconductor element 12A arranged on the first side 16A side can be connected to the second pad arranged on the second side 16B side.

  Next, the case where the electrode 23B of the semiconductor element 12A located near the second side 16B of the wiring board 16 and the electrode 24A of the semiconductor element 12B located near the fourth side 16D of the wiring board 16 are connected will be described. To do. In this case, the electrode 23B of the semiconductor element 12A, the metal thin wire, the first pad 30B, the wiring 21B, the second pad 22B, the metal thin wire, and the electrode 24A of the semiconductor element 12B are connected by the path. Similarly to the above, when the electrode 23B of the semiconductor element 12A and the electrode 24A of the semiconductor element 12B are directly connected by the fine metal wires, it is necessary to jump over the semiconductor elements 12A and 12B to form the fine metal wires. Accordingly, there arises a problem that the fine metal wires cross in a plane. Therefore, by electrically connecting the electrodes of both semiconductor elements via the wiring 21B formed on the surface of the wiring board 16, the length of the fine metal wires is shortened and the cross between the fine metal wires is suppressed. ing.

  Next, the case where the electrode 24B provided near the right side of the semiconductor element 12B and the second pad 22C provided near the second side 16B of the wiring board 16 are connected will be described. In this case, the electrodes 24B of the semiconductor element 12B, the fine metal wires, the first pads 30C, the wiring 21C, and the second pads 22C are connected. As is clear from the drawing, the electrode 24B of the semiconductor element 12B is not located near the side of the wiring board 16 (peripheral portion). That is, the electrode 24B is an electrode provided along the side adjacent to the other adjacent semiconductor element 12A on the upper surface of the semiconductor element 12B. Therefore, the electrode 24B is separated from any side of the wiring board 16, and it is difficult to connect the pad 24 and the outside provided near the side using a fine metal wire. Therefore, in this embodiment, the electrodes 24B of the semiconductor element 12B are rearranged as the second pads 22C of the wiring board 16 by using the wiring provided on the wiring board 16. Thus, the connection between the electrode 24B of the semiconductor element 12B and the outside is facilitated by connecting with a fine metal wire using the second pad 22C.

  The semiconductor module 10 having the above-described configuration can be used for a semiconductor device in which a plurality of semiconductor elements are built in a stack structure. In this case, a lower layer semiconductor element is prepared, and the semiconductor module 10 having the above-described configuration is placed on the upper surface of the lower layer semiconductor element. Furthermore, the pads arranged in the peripheral portion of the wiring board 16 described above are connected to the electrodes of the lower layer semiconductor element or the conductive member of the semiconductor device via the fine metal wires. A specific example will be described with reference to FIG.

  Furthermore, the semiconductor module 10 having the above-described configuration is particularly useful when, for example, a semiconductor element incorporating a driver for controlling the rotation of a motor is mounted on the wiring board 16. That is, if a semiconductor module having a predetermined function and having the above-described configuration is prepared according to the type of motor to be controlled, the semiconductor module can be replaced in accordance with a change in the function of the set.

  With reference to the plan view of FIG. 2, the semiconductor module 10 having the above-described configuration is attached to a region surrounded by electrodes on the upper surface of the first semiconductor element 13 which is a lower layer semiconductor element. In the following description, a semiconductor element placed on the upper surface of the wiring board 16 is referred to as a second semiconductor element 14A or the like in order to distinguish it from the first semiconductor element 13 in the lower layer. Here, FIG. 2A is a plan view showing semiconductor elements stacked in a stack structure, and FIG. 2B is a cross-sectional view.

  As described above, the side of the wiring board 16 is composed of four sides, the first side 16A to the fourth side 16D. Here, the second side 16B and the third side 16C of the wiring board 16 are used. The three side edges of the fourth side edge 16D are located close to the side edge of the lower first semiconductor element 13. Therefore, the pads arranged in the vicinity of these three sides of the wiring board 16 can be easily connected to the electrodes of the first semiconductor element 13 using the metal thin wires.

  On the other hand, the first side 16 </ b> A of the wiring substrate 16 is separated from the side of the first semiconductor element 13 as compared with the other sides. Therefore, when the pad provided near the first side 16A of the wiring board 16 and the electrode of the first semiconductor element 13 in the lower layer are to be connected using a metal fine wire, a problem such as a long metal wire is expected. The Therefore, in the present embodiment, the pads provided in the vicinity of the first side 16A are connected to the pads provided in the vicinity of the other side by using the wiring provided in the wiring board 16. Specifically, the first pad 30A is located near the first side 16A on the upper surface of the wiring board 16, and is disposed near the second side 16B via the wiring 21A. 22A. With this configuration, the electrode 23 </ b> A of the second semiconductor element 14 </ b> A and the electrode 35 of the first semiconductor element 13 can be connected via the wiring layer of the wiring substrate 16. Specific paths are the electrode 23A of the second semiconductor element 14A, the fine metal wire, the first pad 30A of the wiring board 16, the wiring 21A, the second pad 22A, the fine metal wire, and the electrode 35 of the first semiconductor element 13. For these reasons, the length of the fine metal wire used for connection is shortened, the arrangement of the fine metal wire is simplified, and the electrode of the second semiconductor element 14A arranged at an arbitrary position is arranged at a predetermined position. Further, it can be connected to the electrode 35 of the first semiconductor element 13.

  With reference to FIG. 3, the configuration of the semiconductor device 20A of the present embodiment will be described. 3A is a plan view of the semiconductor device 20A, FIG. 3B is a cross-sectional view taken along the line BB ′ of FIG. 3A, and FIG. 3C is FIG. It is sectional drawing in CC 'line | wire of ().

  3A and 3B, the semiconductor device 20A includes a lower first semiconductor element 13 and second semiconductor elements 14A, 14B stacked on the upper surface of the first semiconductor element 13. The third semiconductor element 15 is provided, and the semiconductor elements are electrically connected to each other via the wiring board 16. Further, these semiconductor elements are fixed to the upper surface of the circuit board 17 and integrally covered with a sealing resin 18. In other words, a semiconductor module including the wiring substrate 16 on which the second semiconductor element 14B is mounted is attached to the upper surface of the first semiconductor element 13 to constitute the semiconductor device 20A.

  A predetermined electric circuit is formed on the surface of the first semiconductor element 13, and a large number of electrodes connected to the circuit are provided on the periphery. Furthermore, the lower surface of the first semiconductor element 13 is fixed to the upper surface of the circuit board 17 via an insulating adhesive or the like. The electrodes provided near the periphery of the upper surface of the first semiconductor element 13 are the pads 11 formed on the upper surface of the circuit board 17, the other semiconductor elements or wiring substrate 16 stacked on the upper surface, the metal thin wire 34A, and the like. Connected via.

  Specifically, for example, a microprocessor such as a DSP (Digital Signal Processor) is employed as the first semiconductor element 13, and as an example, basic arithmetic processing of the camera module is performed inside the element. Further, as the first semiconductor element 13, the largest one among the plurality of semiconductor elements incorporated in the semiconductor device 20A is employed. For example, the planar size of the first semiconductor element 13 is about vertical × horizontal = 5 mm × 5 mm. By doing so, a plurality of small second semiconductor elements 14A and the like can be placed on the upper surface of the first semiconductor element 13 which is the largest in plan, and the mounting density of the semiconductor device 20A can be improved.

  Furthermore, as the circuit built in the first semiconductor element 13, an element that can be shared even if the specification of the module in which the semiconductor device 20A is used is changed is preferable. For example, taking a camera module as an example, the image processing function and the function of adjusting the shutter and focus of the camera are integrated in the first semiconductor element 13. Then, even if the number of camera layers or the lens driving mechanism changes, the module composed of the wiring board 16 on which the second semiconductor element 14A and the like are mounted is replaced and the first semiconductor element 13 is used in common. be able to. Since the first semiconductor element 13 such as a DSP is more expensive than other semiconductor elements such as a memory, the price of a set such as a digital camera can be obtained by using the first semiconductor element 13 as a sharable component. Can be cheaper.

  The wiring substrate 16 is attached to the upper surface of the first semiconductor element 13 and functions as a part of a path for electrically connecting the semiconductor elements incorporated in the semiconductor device 20A or between the semiconductor elements and the pads of the circuit board 17. is doing. Here, two second semiconductor elements 14 </ b> A and 14 </ b> B are fixed to the upper surface of the wiring substrate 16. And these 2nd semiconductor elements 14A and 14B are electrically connected to the pad 11 on the 1st semiconductor element 13 and the circuit board 17 via the pad and wiring provided in the upper surface of the wiring board 16. FIG. .

  3A and 3C, the second semiconductor element 14A and the like are elements stacked on the upper surface of the first semiconductor element 13, and here, on the upper surface of the first semiconductor element 13, It is fixed to the upper surface of the attached wiring board 16. Furthermore, at least a portion of the electrodes provided on the upper surfaces of the second semiconductor elements 14A and 14B are connected to the electrodes of other semiconductor elements or the pads 11 on the circuit board 17 via the wiring layer formed on the wiring board 16. Connected.

  Specifically, as the second semiconductor elements 14A and 14B, elements having a smaller planar size than the lower first semiconductor element 13 are employed, and the planar size is, for example, about 1.5 mm × 2 mm. It is. Further, as the second semiconductor elements 14A and 14B, elements that are frequently replaced with changes in the specifications of a set of a digital camera or the like in which the semiconductor device 20A is built can be employed. For example, the driver bar IC that controls the mechanical operation of the camera is an element that is frequently replaced according to the specifications of the set, and is employed as the second semiconductor elements 14A and 14B.

  The third semiconductor element 15 is a semiconductor element that is directly fixed to the upper surface of the first semiconductor element 13. In other words, the third semiconductor element 15 is directly electrically connected to another semiconductor element or the like without going through the wiring substrate 16. The electrode on the upper surface of the third semiconductor element 15 is connected to the first semiconductor element 13, the second semiconductor elements 14A and 14B, or the pad 11 via the fine metal wire 34B. Here, the planar size of the third semiconductor element 15 is the same as that of the second semiconductor element 14 </ b> A and the like described above, and is smaller than that of the first semiconductor element 13.

  As the third semiconductor element 15, an element that is replaced less frequently in accordance with the specification of the set is employed as compared with the second semiconductor element 14A and the like described above. Specifically, as the third semiconductor element 15, a memory IC such as a ROM such as a flash memory, a DRAM, or an SRAM can be employed. The third semiconductor element 15 that is a memory IC temporarily provisions raw image data photographed by an image sensor such as a CCD located outside, image data corrected by the first semiconductor element 13, or compressed data, for example. It has a function to memorize automatically.

  Furthermore, the electrodes on the upper surface of the third semiconductor element 15 are arranged on the assumption that they are stacked in an upper layer in a stack structure. Here, electrodes arranged along two opposing sides are provided on the upper surface of the third semiconductor element 15. Referring to FIG. 3A, a large number of electrodes are formed along the opposite left and right sides of the upper surface of the third semiconductor element 15. And the electrode arrange | positioned along the side of the 3rd semiconductor element 15 is connected only with the electrode of the 1st semiconductor element 13 via the metal fine wire. As described above, as the third semiconductor element 15, an element having higher versatility than the second semiconductor element 14 </ b> A or the like (which is less likely to be replaced depending on the set) is employed. Therefore, even if the third semiconductor element 15 dedicated to the stack structure is designed and manufactured, a large number of elements are used, so that the unit price can be lowered and the cost increase due to the dedicated design can be suppressed.

  Here, the electrodes of the third semiconductor element 15 are not necessarily provided along two opposing sides, and the electrodes may be provided along three sides or four sides. When electrodes are provided along the three sides of the third semiconductor element, it is preferable to provide the electrodes along the three sides excluding the lower side on the paper surface. The reason is that the vicinity of the lower side of the third semiconductor element 15 is far away from the electrode of the first semiconductor element 13 in the lower layer. Therefore, if an electrode is provided in this region and the two elements are connected, the fine metal wire becomes long. This is because the danger of short-circuiting between the fine metal wires increases.

  A large number of pads 11 (conductive members) are formed on the upper surface of the circuit board 17 in a region excluding a portion where the first semiconductor element 13 is mounted. Referring to FIG. 3A, a semiconductor element such as the first semiconductor element 13 is stacked in a stack structure near the center of the circuit board 17, and the peripheral part of the circuit board 17 surrounds the first semiconductor element 13 and the like. A pad 11 is arranged in the vicinity. The pad 11 is connected to one of the electrodes of the first semiconductor element 13, the second semiconductor element 14 </ b> A, the third semiconductor element 15, or the wiring substrate 16 via the fine metal wire 34 </ b> A. Furthermore, wiring for connecting the pads 11 and the like to each other may be provided on the surface of the circuit board 17.

  Referring to FIG. 3B, lands 19 are provided in a matrix on the lower surface of the circuit board 17. Further, an external electrode 29 made of welded solder or the like is formed on the lower surface of each land 19. Here, a multilayer wiring layer is provided on the circuit board 17, and by this wiring layer, a pad 11 formed on the peripheral portion of the upper surface of the circuit board 17 and a predetermined land 19 provided on the lower surface of the circuit board 17. You may connect.

  With reference to FIG. 3C, the first semiconductor element 13 described above is fixed to the upper surface of the circuit board 17. As the material of the circuit board 17, a resin material such as glass epoxy, ceramic, metal or the like is employed. Here, when the circuit board 17 is made of a conductive material such as metal, the surface of the circuit board 17 is entirely covered with a resin layer in order to insulate the pad 11 formed on the surface from the circuit board 17. Is done.

  With reference to FIG. 4, the semiconductor device 20 </ b> A described above can be used to drive a camera-equipped mobile phone or digital camera and perform information processing, for example. In this figure, a control unit 30, a storage unit 33, a driver 31, and a driver 32 are incorporated in the semiconductor device 20A. Each of these parts is formed in the first semiconductor element 13, the third semiconductor element 15, the second semiconductor element 14A, and the second semiconductor element 14B.

  The control unit 30 has, for example, a function of controlling a mechanism included in the camera and processing image data acquired from the camera, and includes the first semiconductor element 13. Specifically, the control unit 30 sends a control signal to the drivers 31 and 32 in accordance with an operation signal input from an external interface such as an operation button. For example, a signal for adjusting the magnification or acquiring an image is sent. Further, the control unit 30 may incorporate a function for processing image data captured by a solid-state imaging device such as a CCD and a function for compressing the image data. In any case, the control unit 30 collects functions that can be used in common even if a mechanism related to the lens of the camera, the number of pixels, and the like are changed. This makes it possible to share one information processing semiconductor element for various types of digital cameras and camera-equipped electronic devices, and to reduce the price of those sets.

  As described above, the storage unit 33 is the third semiconductor element 15 including the semiconductor storage device such as a flash memory. In the storage unit 33, for example, image data acquired by an imaging element located outside, image data corrected by the control unit 30, and compressed data are temporarily stored. The storage unit 33 is a part that can be easily shared even if the specifications and performance of the above-described camera change. For example, even if the shutter mechanism or the focus adjustment mechanism of the camera is changed, the storage unit 33 for storing image data is not affected and can be used as it is.

  On the other hand, if the number of pixels of the camera used is changed, the storage unit 33 is affected. Even in this case, the storage unit 33 can be shared within a predetermined number of pixels. . For example, when the number of pixels of a camera is changed to twice, the storage unit 33 that stores an image captured by the camera also needs to have twice the capacity. In this case, a storage unit 33 having a large capacity may be prepared in advance. That is, in the design stage, when both specifications of 32 kilobytes and 64 kilobytes are assumed, only the storage unit 33 (third semiconductor element 15) of 64 kilobytes is manufactured. When a capacity of 32 kilobytes is required, the electrodes on the surface of the third semiconductor element 15 are partially connected to the outside. When a capacity of 64 kilobytes is required, all or most of the electrodes are connected. Connect to the outside. As a result, there is a waste that the memory of the third semiconductor element 15 is not partially used under the usage condition, but it is more economical than designing and manufacturing the semiconductor element individually according to the required capacity. Is advantageous.

  The driver 31 (second semiconductor element 14A) and the driver 32 (second semiconductor element 14B) have a function of controlling a mechanism provided in the camera in accordance with a drive signal supplied from the control unit 30 or the outside. For example, the driver 31 drives a shutter provided in the camera, and the driver 32 moves a lens in order to optimize the focus of the camera.

  The wiring board 16 is located between a path connecting the control unit 30 and the driver or a path connecting the driver 31 and the driver 32, and has a function of connecting them to each other. Its structure is as described above.

  When the camera drive mechanism is changed, the driver 31 and the driver 32 are frequently replaced in accordance with the change. For example, the driver 31 and the like are frequently replaced by changing the load current of the motor that drives the shutter of the camera, the shape of the lens, the drive system, and the like. Therefore, when the current of the motor that drives the camera is changed, a driver corresponding to the changed current is required. Furthermore, when the system of the mechanism for driving the camera lens is changed from the voice coil motor (VCM) system to the piezo actuator system, the driver is replaced accordingly.

  As described above, the driver 31 (second semiconductor element 14A) and the like are frequently changed in accordance with the camera specification change. However, in the present embodiment, the second semiconductor element 14A and the like in which the driver is incorporated is attached to the wiring board 16. Replacing the mounted semiconductor module 10 can cope with the above-mentioned specification change. Specifically, the second semiconductor element 14A as a driver is not designed on the assumption that it is used in a stack structure. That is, the position of the electrode formed on the surface of the second semiconductor element 14A or the like is provided at a location convenient for the built-in electric circuit. For example, the mounting form shown in FIG. It has not been. Accordingly, when the second semiconductor element 14A is incorporated in a configuration in which only the fine metal wires are stacked, there arises a problem that it is difficult to form the fine metal wires. Furthermore, if the design is changed by rearranging the electrodes on the upper surface of the second semiconductor element 14A due to the stack structure, a great cost is generated. Therefore, in this embodiment, the semiconductor module 10 is configured by interposing the wiring board 16 between another semiconductor element or conductive member and the second semiconductor element 14A or the like. The pads provided along the peripheral portion of the wiring board 16 are arranged at positions where wire bonding with the electrodes of the first semiconductor element 13 in the lower layer is easy. Accordingly, the second semiconductor element 14A can be connected to another semiconductor element using a short metal thin wire.

  In summary, in the present embodiment, the semiconductor module 10 is configured by combining the wiring board 16 and the drivers 31 and 32. Therefore, in order to realize a predetermined function, a plurality of semiconductor modules 10 in which drivers having different functions are mounted on the wiring board 16 are prepared, and the semiconductor module 10 may be replaced when the use is changed. Thus, the cost of a semiconductor device having semiconductor elements stacked in a stack structure can be reduced.

  With reference to FIG. 5 and FIG. 6, the structure of another form of semiconductor device will be described.

  FIG. 5 is a plan view showing a configuration of another form of semiconductor device 20B. In the semiconductor device 20A described above, the plurality of second semiconductor elements 14A and the like and the third semiconductor element 15 are arranged on the upper surface of the first semiconductor element 13, but in the semiconductor device 20B shown in FIG. 14 </ b> A is disposed on the upper surface of the wiring substrate 16. Other configurations are basically the same as those of the semiconductor device 20A described above. That is, here, a semiconductor module in which one first semiconductor element 13 is mounted on the wiring board 16 is configured.

  In the semiconductor device 20B, the first semiconductor element 13 is fixed to the upper surface of the circuit board 17, the wiring board 16 is adhered to the upper surface of the first semiconductor element 13, and the second semiconductor element 14A is fixed to the wiring board 16. ing. The electrodes of the second semiconductor element 14 </ b> A are connected to the pads on the first semiconductor element 13 or the circuit board 17 through the wiring layer formed on the upper surface of the wiring board 16.

  The connection structure described above will be described in detail. First, the electrode 23C provided on the right side of the second semiconductor element 14A and the pad 11A provided on the left side of the circuit board 17 are the electrode 23C, the fine metal wire 26A, the first pad 30D, the wiring 21D, and the second pad 22D. The thin metal wire 26D and the pad 11A are connected through a path. Furthermore, the electrode 23D provided near the lower side of the second semiconductor element 14A and the electrode 25B provided near the upper side of the first semiconductor element 13 include the electrode 23D, the fine metal wire 26C, the first pad 30E, and the wiring. 21E, the second pad 22E, the fine metal wire 26B, and the electrode 25B are connected by a path.

  By connecting the first semiconductor element 13 and the second semiconductor element 14A via the wiring substrate 16 placed on the upper surface of the first semiconductor element 13 as described above, the electrode of the second semiconductor element 14A becomes Even if it arranges at random, it becomes possible to connect both using a metal fine wire.

  Next, the configuration of another form of semiconductor device 20C will be described with reference to the cross-sectional view of FIG. The basic shape of the semiconductor device 20C is the same as that of the semiconductor device 20A described above, and the difference is that it does not include a circuit board.

  That is, in the semiconductor device 20 </ b> C, the conductive pattern 27 corresponding to the pad is embedded in the sealing resin 18, and the back surface (lower surface) is exposed from the sealing resin 18 to the outside. An external electrode 29 made of a brazing material is welded to the exposed conductive pattern 27. Further, the first semiconductor element 13 is fixed to the upper surface of the embedded land-like conductive pattern 27, and the second semiconductor elements 14 A and 14 B are formed on the upper surface of the wiring substrate 16 attached to the upper surface of the first semiconductor element 13. It is fixed. Furthermore, the second semiconductor element 14A and the wiring board 16 are connected via a fine metal wire 34C. Further, the second semiconductor element 14B and the conductive pattern 27 are connected by a thin metal wire 34A. In this embodiment, since the wiring is routed by the wiring substrate 16, a configuration in which the single-layer conductive pattern 27 is embedded in the sealing resin 18 can be realized.

  This embodiment can be variously modified without departing from the gist of the present invention. For example, this embodiment can be changed as follows.

  For example, referring to FIG. 3, wiring substrate 16 can be provided on the entire surface of first semiconductor element 13, and all elements stacked in an upper layer in a stack structure can be placed on wiring board 16. In this way, a plurality of elements can be taken into the semiconductor device with a stack structure more flexibly.

  Furthermore, instead of the semiconductor element, a resin-sealed package may be stacked in a stack structure. In this case, the surface on which the electrodes are formed is arranged on the upper surface, and the electrodes of this package are connected to each other by wires.

It is a top view which shows the semiconductor module of this invention. It is a figure which shows the stack structure by which the semiconductor module of this invention was employ | adopted, (A) is a top view, (B) is sectional drawing. 1A and 1B are plan views showing a semiconductor device of the present invention, in which FIG. 1A is a plan view, FIG. 1B is a cross-sectional view, and FIG. 1C is a cross-sectional view. It is a block diagram which shows the function incorporated in the semiconductor device of this invention. It is a top view which shows the semiconductor device of this invention. It is sectional drawing which shows the semiconductor device of this invention. It is sectional drawing which shows the conventional semiconductor module.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Semiconductor module 11, 11A, 11D Pad 12A, 12B Semiconductor element 13 1st semiconductor element 14, 14A, 14B 2nd semiconductor element 15 3rd semiconductor element 16 Wiring board 16A 1st side edge 16B 2nd side edge 16C 3rd side Side 16D Fourth side 17 Circuit board 18 Sealing resin 19 Land 20A, 20B, 20C Semiconductor device 30A, 30B, 30C, 30D, 30E First pad 21A, 21B, 21C, 21D, 21E Wiring 22A, 22B, 22C, 22D, 22E 2nd pad 23A, 23B, 23C, 23D Electrode 24A, 24B, 24C Electrode 25A, 25B Electrode 26A, 26B, 26C, 26D Metal thin wire 27 Conductive pattern 29 External electrode 30 Control unit 31, 32 Driver 33 Storage unit 34A , 34B, 34C, 34D, 34 Thin metal wire 35 electrode

Claims (7)

A wiring board having at least one wiring layer; and a semiconductor element disposed on an upper surface of the wiring board;
A plurality of pads are provided along side edges on the upper surface of the wiring substrate, and the semiconductor element is disposed on the upper surface of the wiring substrate in a region surrounded by the pads,
The semiconductor module according to claim 1, wherein the wiring board is provided with wiring that passes through a region below the semiconductor element and electrically connects the pads. The wiring board is used by being disposed on the upper surface of the lower semiconductor element,
The pad provided along the side of the wiring board located away from the side of the lower semiconductor element is along the side of the wiring board located close to the side of the lower semiconductor element. The semiconductor module according to claim 1, wherein the semiconductor module is connected to the pad provided through the wiring. A plurality of the semiconductor elements are disposed on an upper surface of the wiring board in a region surrounded by the pads;
A plurality of electrodes are provided along the side of the upper surface of the semiconductor element,
The semiconductor module according to claim 1, wherein an electrode of the semiconductor element provided along a side adjacent to another semiconductor element is electrically connected to the pad of the wiring board. A plurality of the semiconductor elements are disposed on an upper surface of the wiring board;
2. The semiconductor module according to claim 1, wherein the semiconductor elements are electrically connected via the wiring layer of the wiring board.   2. The semiconductor module according to claim 1, wherein the semiconductor element includes a driver circuit that controls rotation of a motor.   The semiconductor module according to claim 1, wherein the semiconductor element is mounted on the wiring board face-up or face-down. A semiconductor device in which a plurality of semiconductor elements are built in a stack structure,
A wiring board having at least one wiring layer; and a semiconductor element disposed on an upper surface of the wiring board;
A plurality of pads are provided along side edges on the upper surface of the wiring substrate, and the semiconductor element is disposed on the upper surface of the wiring substrate in a region surrounded by the pads,
The semiconductor device according to claim 1, wherein the wiring board is provided with a wiring that passes through a region below the semiconductor element and electrically connects the pads.

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