JP2008071608A - Method for manufacturing organic electroluminescence device - Google Patents

Abstract

The present invention provides a method for producing an organic EL device free from defective light emission by providing a defect-free inorganic sealing layer having excellent barrier properties over a long period of time.
(A) a step of forming a first electrode layer on a substrate; (b) a step of forming an organic light emitting medium layer on the first electrode layer; (c) a second on the organic light emitting medium layer. A step of forming an electrode layer; (d) a step of plasma-treating the entire substrate using a gas containing O atoms; and (e) a sealing layer covering the first electrode, the organic light emitting medium layer, and the second electrode. And (f) a step of performing a plasma treatment on the sealing layer using a gas containing F atoms. A method for manufacturing an organic electroluminescent element.
[Selection figure] None

Description

  The present invention relates to an organic electroluminescence device (hereinafter referred to as a flat panel display used for a portable terminal such as a television, a personal computer monitor, a mobile phone, etc.), a surface-emitting light source, illumination, a light-emitting advertising body, and the like. , An organic EL element).

  The organic EL element is expected as a flat panel display that is replaced with a cathode ray tube or a liquid crystal display because of advantages such as a wide viewing angle, a high response speed, and low power consumption.

  An organic EL element has a structure in which an organic light-emitting medium layer is sandwiched between two electrode layers (anode layer and cathode layer), at least one of which has translucency, and a voltage is applied between both electrodes. It is a self-luminous display element in which light is emitted from the organic light emitting medium layer when an electric current is passed. However, since the organic EL element has a problem that it deteriorates due to the influence of moisture and oxygen in the atmosphere, a method of covering with a metal can or glass cap containing a desiccant and blocking from the atmosphere is generally used. .

  In recent years, in order to improve the light extraction efficiency of an active matrix organic EL display, an upper surface light emitting element that extracts light from the sealing member side has been proposed, and instead of a conventional glass cap sealing containing a desiccant, a barrier is used. Has been proposed in which a passivation film (sealing layer) having adhesiveness, an adhesive, and a translucent sealing base material are laminated without providing a space (Patent Document 1).

Organic EL elements include a low-molecular EL element that forms a thin film of a low-molecular light-emitting medium material by a vacuum deposition method, and a polymer EL element that forms a thin film by dissolving a high-molecular light-emitting medium material in a solvent.
As a method of forming a thin film of the organic light emitting medium layer, after selectively forming a thin film on the entire surface of the substrate using a method of selectively patterning using a printing method, a spin coating method, a slit coating method, a spray coating method, A method of removing unnecessary portions is used. However, if this removal step is insufficient, the sealing layer may be peeled off, or when the adhesive is laminated on the sealing layer and cured, the sealing layer is partially peeled off from the base due to stress. This was a cause of deterioration of organic EL elements. This is also the case with a method of selectively patterning ink, such as a printing method or an ink jet method, because the ink is trial-coated on unnecessary portions, and the same problem occurs.
Further, due to the difference in thermal expansion coefficient between the sealing layer made of an inorganic material such as silicon nitride and the adhesive resin such as epoxy, peeling at the interface between the sealing layer and the adhesive is one of the causes of deterioration.
JP 2002-231443 A

  The objective of this invention is providing the inorganic sealing layer excellent in barrier property without a defect over a long period of time, and providing the manufacturing method of an organic EL element without a light emitting defect.

The invention described in claim 1
(A) forming a first electrode layer on the substrate;
(B) forming an organic light emitting medium layer on the first electrode layer;
(C) forming a second electrode layer on the organic light emitting medium layer;
(D) a step of performing plasma treatment on the entire substrate using a gas containing O atoms, and (e) a step of forming a sealing layer covering the first electrode, the organic light emitting medium layer, and the entire second electrode,
It is a manufacturing method of the organic electroluminescent element containing this.

The invention described in claim 2
(A) forming a first electrode layer on the substrate;
(B) forming an organic light emitting medium layer on the first electrode layer;
(C) forming a second electrode layer on the organic light emitting medium layer;
(D) plasma-treating the entire substrate using a gas containing O atoms;
(E) forming a sealing layer covering the first electrode, the organic light emitting medium layer, and the second electrode, and (f) performing a plasma treatment on the sealing layer using a gas containing F atoms.
It is a manufacturing method of the organic electroluminescent element containing this.

  According to a third aspect of the present invention, the step of forming the organic light emitting medium layer further includes a step of removing an unnecessary organic light emitting medium layer, and the unnecessary organic light emitting medium layer uses a solvent or a laser. It is removed, It is a manufacturing method of the organic electroluminescent element of Claim 1 or 2 characterized by the above-mentioned.

  According to a fourth aspect of the present invention, in the step (c) of forming a second electrode layer on the organic light emitting medium layer, the second electrode layer is made of a film made of Ca and Al formed by a vapor deposition method. And (d) in the step of performing plasma treatment on the entire substrate using a gas containing O atoms, the gas containing O atoms is a mixed gas of argon and oxygen, and (F) In the step of performing plasma treatment on the sealing layer using a gas containing F atoms, the gas containing F atoms is a mixed gas of argon and nitrogen trifluoride. It is a manufacturing method of the organic electroluminescent element of description.

  Invention of Claim 5 was manufactured using the manufacturing method in any one of Claims 1-4, It is an organic electroluminescent element characterized by the above-mentioned.

According to the present invention, before the sealing layer is formed, the entire substrate has a plasma treatment process using a gas containing O atoms, so that organic substances remaining on the substrate can be removed. An organic EL element free from defective light emission can be produced by providing a defect-free sealing layer with excellent barrier properties that does not cause film peeling over a long period of time.
Further, in a preferred embodiment, the present invention has a step of performing plasma treatment on the sealing layer using a gas containing F atoms, so that the surface of the sealing layer can be appropriately roughened, Since the adhesiveness between the sealing layer and the adhesive thereon can be ensured over a long period of time, a long-life organic EL element can be provided.

  Hereinafter, although an example of the manufacturing method of the organic EL element of this invention is demonstrated, this invention is not limited to the following example.

  The organic EL device manufactured according to the present invention includes a first electrode layer, an organic light emitting medium layer, and a second electrode layer provided in this order on a substrate, a sealing layer that seals the entire member, and the sealing It is the structure which has at least the sealing base material provided through the adhesive bond layer on a layer. In the top emission panel, as long as at least one of the anode and the cathode is translucent, the electrode layer on the top emission side may be the first electrode or the second electrode.

The material of the substrate is preferably selected according to the emission direction of light emission. For example, glass, quartz, polypropylene, polyethersulfone, polycarbonate, cycloolefin polymer, polyarylate, polyamide, Plastic films and sheets such as polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, etc., metal oxides such as silicon oxide and aluminum oxide, metal fluorides such as aluminum fluoride and magnesium fluoride, etc. Translucent with a single layer or stacked layers of metal nitrides such as silicon nitride and aluminum nitride, metal oxynitrides such as silicon oxynitride, and polymer resin films such as acrylic resin, epoxy resin, silicone resin, and polyester resin sex It is possible to use the wood. When light is not extracted, in addition to the above-described translucent base material, a metal foil such as aluminum or stainless steel, a sheet, a silicon substrate, or a metal film such as aluminum, copper, nickel, or stainless steel is laminated on the plastic film or sheet. A non-translucent base material or the like that has been used can be used.
In addition, these substrates may be used as a driving substrate by forming a thin film transistor (TFT) if necessary. A known thin film transistor can be used as the thin film transistor. Specifically, a thin film transistor mainly including an active layer in which a source / drain region and a channel region are formed, a gate insulating film, and a gate electrode can be given. The structure of the thin film transistor is not particularly limited, and examples thereof include a staggered type, an inverted staggered type, a top gate type, and a coplanar type. The active layer is not particularly limited, and examples thereof include amorphous semiconductor materials such as amorphous silicon, polycrystalline silicon, microcrystalline silicon, cadmium selenide, thiophene oligomers, poly (p-ferylene vinylene), and the like. It can be formed of an organic semiconductor material. These active layers are formed by, for example, depositing amorphous silicon by plasma CVD, ion doping, forming amorphous silicon by LPCVD using SiH ₄ gas, and crystallizing amorphous silicon by solid phase growth. After obtaining silicon, ion doping is performed by ion implantation, LPCVD using Si ₂ H ₆ gas, and amorphous silicon is formed by PECVD using SiH ₄ gas, and laser such as excimer laser is used. After annealing and crystallizing amorphous silicon to obtain polysilicon, polysilicon is laminated by ion doping (low temperature process), low pressure CVD or LPCVD, and thermally oxidized at 1000 ° C. or higher. Gate break Film is formed, a gate electrode of the n + polysilicon is formed thereon, then, a method of ion doping (high temperature process), and the like by an ion implantation method. As the gate insulating film, typically, it can be used that is used as a gate insulating film, for example, PECVD method, SiO formed by the LPCVD method or the like _2; SiO obtained polysilicon film was thermally oxidized ₂ Etc. can be used. As a gate electrode, what is normally used as a gate electrode can be used, for example, metals, such as aluminum and copper, refractory metals, such as titanium, tantalum, and tungsten, polysilicon, silicide of a refractory metal, Polycide etc. are mentioned. The thin film transistor may have a single gate structure, a double gate structure, or a multi-gate structure having three or more gate electrodes. Moreover, you may have a LDD structure and an offset structure. Further, two or more thin film transistors may be arranged in one pixel. The organic EL element of the present invention can be connected so that the thin film transistor functions as a switching element of the organic EL element, and the drain electrode of the transistor and the first electrode of the organic EL element are electrically connected. The thin film transistor, the drain electrode, and the first electrode of the organic EL element are connected via a connection wiring formed in a contact hole that penetrates the planarization film.

  First, an anode is provided as a first electrode layer on a substrate. The anode material is not particularly limited as long as it does not impair the ability to inject holes into the organic light-emitting medium layer described later and is a low resistance material. It may be an element, or it may be a top-emitting organic EL element using a non-transmissive film made of a metal material, a metal oxide such as indium oxide or tin oxide, ITO (indium tin composite oxide) or indium zinc composite oxide. Single layer of metal composite oxides such as metal oxides, zinc aluminum composite oxides, metal materials such as gold and platinum, and fine particle dispersion films in which fine particles of these metal oxides or metal materials are dispersed in epoxy resin or acrylic resin Alternatively, any of those laminated can be used. If necessary, a metal material such as copper or aluminum may be provided as an auxiliary electrode in order to reduce the wiring resistance of the anode. Depending on the material, the anode material can be formed by a resistance heating vapor deposition method, an electron beam vapor deposition method, a reactive vapor deposition method, an ion plating method, a dry deposition method such as a sputtering method, a gravure printing method, or a screen printing method. A wet film forming method such as can be used. As a patterning method, an existing patterning method such as a mask vapor deposition method, a photolithography method, a wet etching method, or a dry etching method can be used depending on a material and a film forming method.

If necessary, it is preferable to form a partition wall that covers the end of the first electrode layer and partitions a plurality of organic EL elements. The partition wall needs to have insulating properties, and a photosensitive material or the like can be used. The photosensitive material may be a positive type or a negative type, a photo-curing resin of a photo radical polymerization system, a photo cationic polymerization system, or a copolymer containing an acrylonitrile component, polyvinyl phenol, polyvinyl alcohol. , Novolak resin, polyimide resin, cyanoethyl pullulan, SiO ₂ , TiO _2, or the like can also be used. When the partition wall forming material is a photosensitive material, the entire surface of the forming material solution is coated by a slit coating method or a spin coating method, and then patterning is performed by a photolithography method such as exposure and development. Moreover, you may form a pattern using an intaglio printing method, a relief printing method, and a lithographic printing method. When the partition wall forming material is SiO ₂ or TiO ₂ , it can be formed by a dry film forming method such as a sputtering method or a CVD method, and patterning of the partition wall can be performed by a mask or a photolithography method.

Next, an organic light emitting medium layer is formed inside the partition. The organic light emitting medium layer in the present invention can be formed of a single layer film or a multilayer film containing a light emitting substance. Examples of the configuration in the case of forming a multilayer film include a hole transport layer, an electron transporting light emitting layer or a hole transporting light emitting layer, a two-layer structure comprising an electron transport layer, a hole transport layer, a light emitting layer, and an electron transport layer. By further separating the hole (electron) injection function and the hole (electron) transport function as necessary, or by inserting a layer that blocks the transport of holes (electrons), if necessary, It is more preferable to form a multilayer.
Examples of hole transport materials include metal phthalocyanines such as copper phthalocyanine and tetra (t-butyl) copper phthalocyanine and metal-free phthalocyanines, quinacridone compounds, 1,1-bis (4-di-p-tolylaminophenyl) Cyclohexane, N, N′-diphenyl-N, N′-bis (3-methylphenyl) -1,1′-biphenyl-4,4′-diamine, N, N′-di (1-naphthyl) -N, Aromatic amine low molecular hole injection and transport materials such as N′-diphenyl-1,1′-biphenyl-4,4′-diamine, polyaniline, polythiophene, polyvinylcarbazole, poly (3,4-ethylenedioxythiophene) ) And polystyrene sulfonic acid and other polymer hole transport materials, polythiophene oligomer materials, and other existing hole transport materials Door can be.
As the light-emitting material, 9,10-diarylanthracene derivatives, pyrene, coronene, perylene, rubrene, 1,1,4,4-tetraphenylbutadiene, tris (8-quinolinolato) aluminum complex, tris (4-methyl-8-) Quinolinolato) aluminum complex, bis (8-quinolinolato) zinc complex, tris (4-methyl-5-trifluoromethyl-8-quinolinolato) aluminum complex, tris (4-methyl-5-cyano-8-quinolinolato) aluminum complex, Bis (2-methyl-5-trifluoromethyl-8-quinolinolato) [4- (4-cyanophenyl) phenolate] aluminum complex, bis (2-methyl-5-cyano-8-quinolinolato) [4- (4- Cyanophenyl) phenolate] aluminum complex, tri (8-quinolinolato) scandium complex, bis [8- (para-tosyl) aminoquinoline] zinc complex and cadmium complex, 1,2,3,4-tetraphenylcyclopentadiene, pentaphenylcyclopentadiene, poly-2,5- Diheptyloxy-para-phenylene vinylene, coumarin phosphor, perylene phosphor, pyran phosphor, anthrone phosphor, porphyrin phosphor, quinacridone phosphor, N, N'-dialkyl-substituted quinacridone phosphor , Naphthalimide-based phosphors, N, N′-diaryl-substituted pyrrolopyrrole-based phosphors, low-molecular light-emitting materials such as phosphorescent phosphors such as Ir complexes, polyfluorene, polyparaphenylene vinylene, polythiophene, polyspiro, etc. Polymer materials and the dispersion of the low molecular weight materials into these polymer materials. Alternatively, a copolymerized material or other existing light emitting materials can be used.
Examples of electron transport materials include 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole, 2,5-bis (1-naphthyl) -1 3,4-oxadiazole, oxadiazole derivatives, bis (10-hydroxybenzo [h] quinolinolato) beryllium complexes, triazole compounds, and the like can be used.
The thickness of the organic light emitting medium layer is 1000 nm or less, preferably 50 to 150 nm, even when formed by a single layer or a stacked layer. In particular, the hole transport material of the polymer EL element has a large effect of covering the surface protrusions of the base material and the anode layer, and it is more preferable to form a film having a thickness of about 50 to 100 nm.
Depending on the material, the organic light-emitting medium layer can be formed by vacuum deposition, coating, printing such as slit coating, spin coating, spray coating, nozzle coating, flexo, gravure, micro gravure, intaglio offset, inkjet, etc. The method etc. can be used.
Here, when a coating method such as a spin coating method, a spray coating method, a micro gravure method, or a slit coating method is used, a film cannot be selectively formed in the partition wall, for example, a film is formed on the entire surface of the substrate. Later, it is necessary to remove the film formed on the unnecessary portion by wiping with a soluble solvent or by laser irradiation.

  Next, a cathode is formed as a second electrode layer. As the material of the cathode, a single metal such as Mg, Al, Yb is used, or a compound such as Li, oxidized Li, or LiF is sandwiched by about 1 nm at the interface in contact with the organic light emitting medium layer, and Al having high stability and conductivity. Alternatively, Cu or Cu may be laminated. Alternatively, in order to achieve both electron injection efficiency and stability, one or more metals such as Li, Mg, Ca, Sr, La, Ce, Er, Eu, Sc, Y, and Yb having a low work function and stable Ag, Al An alloy system with a metal element such as Cu or Cu may be used. Specifically, alloys such as MgAg, AlLi, and CuLi can be used. Furthermore, these materials such as Li and Cs having a low work function can be used by doping a small amount in the organic light emitting medium layer. When used as a light-transmitting electron injecting electrode layer, a thin work piece of Li and Ca having a low work function is provided, and then ITO (indium tin composite oxide), indium zinc composite oxide, zinc aluminum composite oxide, etc. A metal oxide such as ITO may be laminated by doping a small amount of a metal such as Li or Ca having a low work function in the organic light emitting medium layer. As a method for forming the cathode, a resistance heating vapor deposition method, an electron beam vapor deposition method, a reactive vapor deposition method, an ion plating method, or a sputtering method can be used depending on the material. Although there is no restriction | limiting in particular in the thickness of a cathode, About 10 nm-1000 nm are desirable. Moreover, when using as a translucent electron injection electrode layer, when using metal materials, such as Ca and Li, about 0.1-10 nm is desirable for film thickness.

  Next, a sealing layer is laminated. Here, if the removal residue of the organic light emitting medium layer is on the first electrode layer, the adhesion of the sealing layer is locally reduced, causing film peeling or cracking, which causes deterioration of the organic EL element. Become. Therefore, it is preferable to perform plasma irradiation before forming the sealing layer. There is no particular limitation on the step of plasma irradiation, but it is preferable to perform in the deposition chamber in accordance with the method for forming the sealing layer because the sealing film can be formed immediately after the treatment. As a plasma gas, a gas containing O atoms, a gas in which oxygen and argon, nitrogen, hydrogen or helium are mixed, a gas containing oxygen atoms such as nitrous oxide gas, or a mixed gas thereof is used as necessary. In particular, it is more preferable to use nitrous oxide, a mixed gas of oxygen and argon, or the like for removing organic substances.

As the sealing layer, metal oxides such as silicon oxide and aluminum oxide, metal fluorides such as aluminum fluoride and magnesium fluoride, metal nitrides such as silicon nitride, aluminum nitride and carbon nitride, metals such as silicon oxynitride Metal carbides such as oxynitride and silicon carbide can be used. In particular, it is preferable to use silicon nitride, silicon oxide, or silicon oxynitride having excellent barrier properties. In addition, as these sealing layers, a laminated film with a polymer resin film such as an acrylic resin, an epoxy resin, a silicone resin, or a polyester resin can be used as required. Further, when light is not extracted from above. Alternatively, a metal film such as aluminum, titanium, or gold may be stacked. As a method for forming the sealing layer, a resistance heating vapor deposition method, an electron beam vapor deposition method, a reactive vapor deposition method, an ion plating method, a sputtering method, or a CVD method can be used depending on the material. Further, it is preferable to use the CVD method in terms of translucency. As the CVD method, a thermal CVD method, a plasma CVD method, a catalytic CVD method, a VUV-CVD method, or the like can be used. In addition, as a reaction gas in the CVD method, a gas such as N ₂ , O ₂ , NH ₃ , H ₂ , N ₂ O is added to an organic silicon compound such as monosilane, hexamethyldisilazane (HMDS), or tetraethoxysilane. It can be added as necessary. These films may contain hydrogen or carbon in the film depending on the reactive gas used. The thickness of the sealing layer varies depending on the electrode level difference of the organic EL element, the height of the partition walls of the substrate, the required barrier characteristics, etc., but is preferably about 10 nm to 10000 nm, and more preferably about 100 nm to 1000 nm. preferable.

Next, a sealing substrate is laminated on the sealing layer via an adhesive layer. At this time, in order to improve the adhesion between the sealing layer and the adhesive layer, the surface of the sealing layer is irradiated with plasma with a gas containing F atoms. There is no particular limitation on the plasma gas, but perfluorocarbons such as CF ₄ and C ₂ F ₆ , hydrofluorocarbons such as CF ₃ CHF ₂ , carbon-containing fluorides such as COF ₂ and CF ₃ CN, F ₂ , NF ₃ , it is preferable to use a non-carbon fluorides such SF _6. In particular, in order to form minute irregularities on the surface of the sealing layer, the barrier of the sealing layer is used by diluting to 10% or less, preferably 5% or less, in an inert gas such as argon gas or nitrogen gas. The adhesiveness with the adhesive layer can be improved without impairing the properties.

As the material for the adhesive layer, photo-curing adhesive resin made of epoxy resin, acrylic resin, silicone resin, etc., thermosetting adhesive resin, thermoplastic adhesive resin made of acid-modified products such as polyethylene, polypropylene, etc. are used. can do. As a method for forming the adhesive layer, a coating method such as spin coating, spray coating, flexo, gravure, micro gravure, and intaglio offset, a printing method, an ink jet method, a transfer method, and a laminating method are used depending on the material and pattern. be able to. Although there is no restriction | limiting in particular in the thickness of a contact bonding layer, Since the thinner one can reduce the permeation | transmission amount of a water | moisture content, about 5-50 micrometers is preferable.
As the material for the sealing substrate, it is desirable to select an optimal substrate according to the light extraction direction, as in the above-described substrate, and glass, quartz, barrier film, metal foil, etc. can be used. is there. Further, it is preferable to provide a circular deflection function, a color filter function, an antireflection function, or the like as necessary.

  EXAMPLES Hereinafter, although this invention is further demonstrated by Example 1 and a comparative example, this invention is not restrict | limited to the following example.

<Example 1>
Glass was used as a substrate, and an ITO film (150 nm) was patterned as a first electrode layer on the substrate by sputtering.
Next, as a partition wall, a positive photosensitive polyimide resin (1 μm) was formed into a pattern film using a photolithography method.
Next, as an organic light emitting medium layer, a mixture (20 nm) of poly (3,4-ethylenedioxythiophene) and polystyrenesulfonic acid is used for the hole transport layer, and poly [2-methoxy-5- (2 ′) is used for the light emitting layer. -Ethyl-hexyloxy) -1,4-phenylene vinylene] (MEHPPV) (100 nm) was formed by spin coating, and then the hole transport layer was methanol and the light-emitting layer was toluene. The pattern was formed.
Next, as a second electrode layer, a Ca film (5 nm) and an Al film (150 nm) were stacked using a vapor deposition method.
Next, before forming the sealing layer, plasma irradiation is performed using a mixed gas of argon and oxygen (gas flow ratio 2: 1), and a silicon nitride film (1000 nm) is formed as a sealing layer by plasma CVD. Filmed.
Next, the surface of the sealing layer is irradiated with plasma with a mixed gas of argon and nitrogen trifluoride (gas flow ratio 100: 5), and a thermosetting epoxy adhesive is bonded as an adhesive layer, and glass is bonded as a sealing substrate. Combined.
The produced organic EL panel did not show a reduction in light emitting area even when stored for 3000 hours at 85 ° C. and 90% RH.

<Comparative Example 1>
In the organic EL element described in Example 1, an organic EL element was produced without performing plasma irradiation before forming the sealing layer.
As a result of storing the produced organic EL panel at 85 ° C. and 90% RH for 3000 hours, the sealing layer was partially peeled off, and the pixel area of the organic EL element was reduced to 70% or less due to moisture entering from the end.

<Comparative example 2>
In the organic EL element described in Example 1, an organic EL element was produced without performing plasma irradiation after forming the sealing layer.
As a result of storing the produced organic EL panel at 85 ° C. and 90% RH for 3000 hours, peeling between the sealing layer and the adhesive layer occurs, and the pixel area of the organic EL element is reduced to 70% or less due to moisture entering from the end. did.

  The organic EL device produced according to the present invention can be suitably used for flat panel displays, surface-emitting light sources, illumination, light-emitting advertising bodies and the like used for portable terminals such as televisions, personal computer monitors, and mobile phones.

Claims (5)

(A) forming a first electrode layer on the substrate;
(B) forming an organic light emitting medium layer on the first electrode layer;
(C) forming a second electrode layer on the organic light emitting medium layer;
(D) a step of performing plasma treatment on the entire substrate using a gas containing O atoms, and (e) a step of forming a sealing layer covering the first electrode, the organic light emitting medium layer, and the entire second electrode,
The manufacturing method of the organic electroluminescent element containing this. (A) forming a first electrode layer on the substrate;
(B) forming an organic light emitting medium layer on the first electrode layer;
(C) forming a second electrode layer on the organic light emitting medium layer;
(D) plasma-treating the entire substrate using a gas containing O atoms;
(E) forming a sealing layer covering the first electrode, the organic light emitting medium layer, and the second electrode, and (f) performing a plasma treatment on the sealing layer using a gas containing F atoms.
The manufacturing method of the organic electroluminescent element containing this.   The step of forming the organic light emitting medium layer further includes a step of removing an unnecessary organic light emitting medium layer, and the unnecessary organic light emitting medium layer is removed by using a solvent or a laser. Item 3. A method for producing an organic electroluminescent element according to Item 1 or 2.   (C) In the step of forming a second electrode layer on the organic light emitting medium layer, the second electrode layer is a laminate of a film made of Ca and a film made of Al formed by an evaporation method, d) In the step of plasma-treating the entire substrate using a gas containing O atoms, the gas containing O atoms is a mixed gas of argon and oxygen, and (f) the top of the sealing layer 3. The method of manufacturing an organic electroluminescence device according to claim 2, wherein in the plasma treatment using the gas containing F atoms, the gas containing F atoms is a mixed gas of argon and nitrogen trifluoride. Method.   An organic electroluminescence device manufactured using the manufacturing method according to claim 1.